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Glass or stone abrading

Subclass of:

451 - Abrading

451028000 - ABRADING PROCESS

Patent class list (only not empty are listed)

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Class / Patent application numberDescriptionNumber of patent applications / Date published
451044000 Edging 43
451042000 Lens 28
Entries
DocumentTitleDate
20090191795COMPOSITION FOR FORMING POLISHING LAYER OF CHEMICAL MECHANICAL POLISHING PAD, CHEMICAL MECHANICAL POLISHING PAD AND CHEMICAL MECHANICAL POLISHING METHOD - Provided is a composition for forming a polishing layer of a chemical mechanical polishing pad having polishing characteristics such as a high polishing rate, an excellent planarity of the polished object and less scratches of the polished object.07-30-2009
20090191794POLISHING METHOD, POLISHING PAD, AND POLISHING SYSTEM - A polishing method, a polishing pad, and a polishing system are described. The polishing pad with a plurality of grooves is provided. The width of each groove is W and the pitch between two adjacent grooves is P. An oscillatory movement distance of a workpiece on the polishing pad is set. The oscillatory movement distance enables any particular point on the workpiece to cross the same number of grooves, when a direction between the particular point and the center of the workpiece is perpendicular to a tangential direction of the grooves. The workpiece is then polished with the oscillatory movement distance, so as to achieve a better polishing uniformity for the surface of the workpiece.07-30-2009
20110195639RETAINING RING WITH SHAPED SURFACE - A retaining ring can be shaped by machining or lapping the bottom surface of the ring to form a shaped profile in the bottom surface. The bottom surface of the retaining ring can include flat, sloped and curved portions. The lapping can be performed using a machine that dedicated for use in lapping the bottom surface of retaining rings. During the lapping the ring can be permitted to rotate freely about an axis of the ring. The bottom surface of the retaining ring can have curved or flat portions.08-11-2011
20130045663METHOD AND APPARATUS FOR OPTICALLY MEASURING BY INTERFEROMETRY THE THICKNESS OF AN OBJECT - Methods and apparatuses are used for optically measuring by interferometry the thickness (T) of an object (02-21-2013
20100112905WAFER HEAD TEMPLATE FOR CHEMICAL MECHANICAL POLISHING AND A METHOD FOR ITS USE - The present invention is a planar template for a CMP tool polishing head possessing a means of securing a wafer in CMP polishing where the back surface of the template is held to the polishing head by retaining means and a method for using the planar template.05-06-2010
20100075577METHOD OF POLISHING GLASS SUBSTRATE - An object of the present invention is to provide a polishing method for diminishing concave defects of a glass substrate used in a reflective mask for EUVL and the like. The invention relates to a method of polishing a glass substrate which comprises polishing a major surface of the glass substrate while feeding a polishing slurry between the glass substrate and a pad surface of a polishing pad, wherein the polishing load of the polishing pad is from 1 to 60 g/cm03-25-2010
20130078891DEVICE FOR CUTTING OF GLASS SHEET - Disclosed herein is a device for cutting a glass sheet, continuously supplied after a melting and solidification process, into quadrangular glass substrates. The glass sheet cutting device includes two or more cutters for cutting a glass sheet into quadrangular glass substrates, a defect inspector for scanning the glass sheet to three-dimensionally check defect positions in a length direction, a width direction and a thickness direction of the glass sheet, a position adjuster for moving at least one of the cutters to a portion of the glass sheet at which few defects are distributed, and a controller for informing the position adjuster of positions of the cutters based on the scanned results received from the defect inspector.03-28-2013
20130078892POLISHING PAD, PRODUCTION METHOD FOR SAME, AND PRODUCTION METHOD FOR GLASS SUBSTRATE - A polishing pad having a polishing layer comprising a thermoset polyurethane foam, 03-28-2013
20130035021POLISHING PAD, MANUFACTURING METHOD THEREFOR, AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A polishing pad having a polishing layer comprising a thermoset polyurethane foam, wherein the thermoset polyurethane foam contains, as raw material components, an isocyanate component, and active-hydrogen-containing compounds, and the active-hydrogen-containing compounds comprise one or more polyol compounds (each) having two or more functional groups, and a monool compound having one functional group.02-07-2013
20100041317WORKPIECE PROCESSING METHOD - A method of processing a workpiece having a plurality of multi-crystal silicon columns embedded in single-crystal silicon includes a grinding step for grinding only the single-crystal silicon by use of a grinding tool and an abrasive step for concurrently polishing the single-crystal silicon and the multi-crystal silicon columns by use of an abrasive tool in a dry manner to expose all the heads of the multi-crystal silicon columns to the front surface of the single-crystal silicon.02-18-2010
20090156099METHODS AND APPARATUSES FOR SURFACE FINISHING CURED CONCRETE - A method and apparatus for finishing cured concrete floors using a riding trowel to which large diameter pans are attached having a balanced distribution of abraders releasably secured to the undersides of the pans. The individual abraders are preferably individually spring biased so as to maintain full contact with the floor when traversing undulations of the floor.06-18-2009
20090042489WAFER POLISHING APPARATUS AND WAFER POLISHING METHOD - A wafer polishing in which a polishing liquid is supplied to a polishing pad for polishing a wafer carried on a carrier head; and the polishing liquid is supplied from one or more polishing liquid supplying devices onto the polishing pad, by a polishing liquid supplying member of the polishing liquid supplying device being positioned close to or in contact with the polishing pad, and is relatively moved against the polishing pad, so that the polishing liquid supplied to the upper portion of the polishing liquid supplying member flows down along the polishing liquid supplying member to be painted on a surface of the polishing pad.02-12-2009
20090042488BACK GRINDING METHOD FOR WAFER - A back grinding method for a wafer includes covering a face-side surface of the wafer with a resin film, and cutting the surface of the resin film to form a flat surface parallel to the face-side surface of the wafer. The wafer is held with the surface of the resin film in contact with a suction surface of a chuck table in a grinding apparatus, and the exposed back-side surface of the wafer is ground. Unevenness in thickness of the resin film is suppressed, whereby the thickness of the wafer subjected to back grinding is made to be uniform.02-12-2009
20090042486Polishing method, substrate manufacturing method, and electronic apparatus manufacturing method - A polishing method configured to simultaneously polish both surfaces of a work includes the steps of inserting the work into a hole in a carrier and fixing the work with a fixing member, attaching the carrier to a polishing apparatus, polishing both surfaces of the work simultaneously, and detaching the carrier from the polishing apparatus after the polishing step, and attaching the carrier to an immediate cleaning apparatus.02-12-2009
20130072091METHOD FOR THE DOUBLE-SIDE POLISHING OF A SEMICONDUCTOR WAFER - A method of simultaneous double-side polishing of a front side and a rear side of at least one wafer composed of semiconductor material includes disposing each wafer in a respective suitably dimensioned cutout in a carrier plate. The at least one wafer is polished on the front side and on the rear side between an upper polishing plate covered with a first polishing pad and a lower polishing plate covered with a second polishing pad while supplying a polishing agent. A respective surface of each of the first and second polishing pads is interrupted by at least one respective channel-shaped depression running spirally from a center to an edge of the respective pad.03-21-2013
20090270017Slurryless Mechanical Planarization for Substrate Reclamation - A patterned portion of a patterned semiconductor substrate is removed by abrasive mechanical planarization employing an abrasive pad but without employing any slurry. Preferably, water is supplied to enhance the removal rate during the mechanical planarization. The removal rate of material is substantially independent for common materials employed in back-end-of-line (BEOL) semiconductor materials, which enables non-selective removal of the material containing metallization structures. The removal rate of silicon is lower than the removal rate for the BEOL semiconductor materials, enabling a self-stopping planarization process.10-29-2009
20090233529METHOD OF MANUFACTURING GLASS SUBSTRATE FOR MAGNETIC DISK, METHOD OF MANUFACTURING MAGNETIC DISK, AND POLISHING APPARATUS OF GLASS SUBSTRATE FOR MAGNETIC DISK - A method of manufacturing a glass substrate for a magnetic disk is provided, by which polishing accuracy on an inner circumferential end face of a glass substrate is improved, and a thermal asperity trouble can be avoided.09-17-2009
20090047873SUBSTRATE RETAINER - A retainer is used with an apparatus for polishing a substrate. The substrate has upper and lower surfaces and a lateral, substantially circular, perimeter. The apparatus has a polishing pad with an upper polishing surface for contacting and polishing the lower face of the substrate. The retainer has an inward facing retaining face for engaging and retaining the substrate against lateral movement during polishing of the substrate. The retaining face engages a substrate perimeter at more than substantially a single discrete circumferential location along the perimeter.02-19-2009
20090298392POLYMER MATERIAL, FOAM OBTAINED FROM SAME, AND POLISHING PAD USING THOSE - The subject is to provide a polymer material which enables to improve planarity and planarization efficiency of a polished surface and is useful as a polishing pad which generates only a few scratches. The said subject is solved by a polymer material having a tensile modulus at 50° C. after saturation swelling with 50° C. water of 130 to 800 MPa, a loss tangent at 50° C. of not more than 0.2, and a contact angle with water of not more than 80°.12-03-2009
20130165021PRECISION SHARPENER FOR CERAMIC KNIFE BLADES - An electrically powered knife sharpener for ceramic (or other brittle, crystalline or amorphous media which could be used for blades) knives includes at least one pre-sharpening stage with a sharpening member(s) and includes a final stage with a sharpening member(s). There are one or more motor driven shafts on which the abrasive surfaced sharpening members, such as disks, are mounted. Guide structure is provided to guide the knife for aligning and positioning the knife facet precisely at a defined location on the abrasive surface of each rotating sharpening member. The pre-sharpening stage sharpening member(s) moves in a first direction. The final stage sharpening member(s) moves in a second direction which differs from the first direction.06-27-2013
20110183583Polishing Pad with Floating Elements and Method of Making and Using the Same - The disclosure is directed to polishing pads with floating polishing elements bonded to a support layer, for example by thermal bonding, and to methods of making and using such pads in a polishing process. In one exemplary embodiment, the polishing pad includes a multiplicity of polishing elements, at least some of which may be porous, each polishing element affixed to a major surface of a support layer so as to restrict lateral movement of the polishing elements with respect to one or more of the other polishing elements, but remaining moveable in an axis substantially normal to the support layer. In certain embodiments, the polishing pad may additionally include a compliant layer affixed to the support layer opposite the polishing elements, and optionally, a polishing composition distribution layer. In some embodiments using porous polishing elements, the pores are distributed substantially at a polishing surface of the polishing elements.07-28-2011
20100330881Method For The Double Sided Polishing Of A Semiconductor Wafer - Semiconductor wafers are double sided polished by a method of polishing a frontside of the wafer in a first step with a polishing pad with fixed abrasive and simultaneously polishing a backside of the wafer with a polishing pad containing no abrasive, but during which an abrasive polishing agent is introduced between the polishing pad and the backside of the wafer, inverting the wafer, and then in a second step polishing the backside of the wafer with a polishing pad containing fixed abrasive and simultaneously polishing the frontside of the wafer with a polishing pad containing no fixed abrasive, a polishing agent containing abrasive being introduced between the polishing pad and the frontside of the semiconductor wafer.12-30-2010
20120108149METHOD FOR MANUFACTURING POLISHING PAD - A method for manufacturing a polishing pad, which may be laminated, with a small number of manufacturing steps, high productivity and no peeling between a polishing layer and a cushion layer includes preparing a cell-dispersed urethane composition by a mechanical foaming method; continuously discharging the cell-dispersed urethane composition onto a face material, while feeding the face material; laminating another face material on the cell-dispersed urethane composition; curing the cell-dispersed urethane composition, while controlling its thickness to be uniform, so that a polishing layer including a polyurethane foam is formed; cutting the polishing layer parallel to the face into two pieces so that two long polishing layers each including the polishing layer and the face material are simultaneously formed; and cutting the long polishing layers to produce the polishing pad.05-03-2012
20120108148Method of Modifying Flat Glass Surface and Apparatus for Carrying Out the Method - The method of modifying the flat glass surface is based on that the surface of a glass is worked by abrasive grains of synthetic diamond which are situated in the mass of plastic threads that are a part of a rotating brush. The glass is first tarnished using brushes with rougher abrasive grains of synthetic diamond and then tarnishing is finished using brushes with smaller abrasive grains. With the brushes, it is also possible to modify already sandblasted glass surface. The apparatus for modifying glass surface is made up of at least one rotating brush (05-03-2012
20090280723INTERPENETRATING POLYMER NETWORK STRUCTURE AND POLISHING PAD, AND PROCESS FOR PRODUCING THE SAME - The present invention relates to a process for producing an interpenetrating polymer network structure, which comprises the steps of impregnating a polymer molding with a radical polymerizable composition containing an ethylenically unsaturated compound and a radical polymerization initiator; and polymerizing the ethylenically unsaturated compound in a swollen state of the polymer molding impregnated with the radical polymerizable composition; wherein a chain transfer agent and/or a radical polymerization inhibitor are added to the radical polymerizable composition and/or the polymer molding before impregnating the polymer molding with the radical polymerizable composition. According to the present invention, a highly uniform interpenetrating polymer network structure can be obtained. The present invention also provides a polishing pad which is exhibits high in-plane uniformity of a polishing rate during polishing, and also has excellent flattening properties and improved pad lifetime during polishing, and a process for producing the same.11-12-2009
20110081835Method for making polished gemstones and an abrasive material for doing same - A method for shaping a gemstone comprising the steps of 1) attaching a gemstone to a dop, 2) holding the gemstone against a rotating lap wheel, and 3) shaping the gemstone on the lap wheel. The surface of the lap wheel is a metal abrasive material comprising a base having a plurality of pyramidal shapes protruding therefrom, a portion of the protrusions having a substantially polygonal base and triangular sides which meet at an apex which substantially forms a point, hereinafter pyramidal protrusions, and a portion of the protrusions having a substantially polygonal base and substantially trapezoidal sides with the portion thereof distant from the base surface forming a plateau such that the protrusions are substantially butte-like in shape, hereinafter termed butte protrusions, the protrusions providing intermixing cutting and planing edges, the ratio of the pyramidal protrusions to the butte protrusions ranging from 100:0 to 0:100. Also provided is the metal abrasive material used to carry out the method.04-07-2011
20090298393SLURRY SUPPLYING APPARATUS AND METHOD OF POLISHING SEMICONDUCTOR WAFER UTILIZING SAME - A diluted slurry supplying apparatus utilized in a polishing apparatus for finishing a semiconductor wafer with a slurry containing colloidal silica and water-soluble polymer is provided. The polishing method comprises: a slurry supplier capable of supplying the slurry containing the colloidal silica and the water-soluble polymer; a diluent supplier capable of supplying a diluent containing an aggregation preventing agent to dilute the slurry; a mixer capable of receiving the slurry and the diluent having been supplied from the slurry supplier and the diluent supplier, respectively, the mixer forming a diluted slurry with a pH value of at least 9; and an ultrasonic vibrator capable of applying an ultrasonic vibration to the diluted slurry staying in the mixer or being fed out from the mixer. Here, the diluent supplying apparatus can change a dilution proportion of the diluted slurry.12-03-2009
20120190276POLISHING PAD AND METHODS FOR MANUFACTURING AND USING THE SAME - This invention provides a polishing pad, which includes a substrate and a plurality of discrete abrasive blocks fixed on the substrate, wherein the abrasive blocks are of at least two kinds of heights. This invention would not reduce the polishing rate dramatically during the process for polishing a wafer by using the polishing pad in the long run. Therefore a thickness of the wafer to be polished is able to be controlled accurately, thereby improving the effect and yield of polishing the wafer. The present invention further provides a method for manufacturing the polishing pad. The polishing pad according to this invention is manufactured conveniently by using this method. Correspondingly, a method for using the polishing pad is also provided in this invention.07-26-2012
20100022171Glass polishing compositions and methods - The present invention provides glass polishing compositions and methods suitable for polishing a glass substrate at a down force of about 110 g/cm01-28-2010
20090098808GRINDING METHOD FOR WAFER - A grinding method for a wafer having a plurality of devices on the front side, wherein the back side of the wafer is ground by a grinding wheel to suppress the motion of heavy metal in the wafer by a gettering effect and also to maintain the die strength of each device at about 1,000 MPa or more. The grinding wheel is composed of a frame and an abrasive member fixed to the free end of the frame. The abrasive member is produced by fixing diamond abrasive grains having a grain size of less than or equal to 1 μm with a vitrified bond. A protective member is attached to the front side of the wafer and the wafer is held on a chuck table in the condition where the protective member is in contact with the chuck table. The grinding wheel is rotated as rotating the chuck table to thereby grind the back side of the wafer by means of the abrasive member so that the average surface roughness of the back side of the wafer becomes less than or equal to 0.003 μm and the thickness of a strain layer remaining on the back side of the wafer becomes 0.05 μm.04-16-2009
20130189904METHOD FOR POLISHING A SEMICONDUCTOR WAFER - A method of polishing a semiconductor wafer using a holding system including a lined cutout the size of the semiconductor wafer that is fixed to a carrier. The method includes holding the semiconductor wafer in the cutout through adhesion of a first side of the semiconductor wafer to a bearing surface in the cutout and polishing a second side of the held semiconductor wafer using a polishing pad that is fixed on a polishing plate while introducing a polishing agent between the second side of the semiconductor wafer and the polishing pad, the polishing pad including fixedly bonded abrasive materials. The carrier is guided during polishing such that a portion of the second side of the semiconductor wafer temporarily projects beyond a lateral edge of a surface of the polishing pad.07-25-2013
20100112906Chemical mechanical polishing composition and methods relating thereto - A method for chemical mechanical polishing of a substrate comprising a germanium-antimony-tellurium chalcogenide phase change alloy using a chemical mechanical polishing composition comprising water; 1 to 40 wt % colloidal silica abrasive particles having an average particle size of ≦50 nm; and 0 to 5 wt % quarternary ammonium compound; wherein the chemical mechanical polishing composition is oxidizer free and chelating agent free; and, wherein the chemical mechanical polishing composition has a pH >6 to 12.05-06-2010
20090061739POLISHING APPARATUS AND METHOD FOR POLISHING SEMICONDUCTOR WAFERS USING LOAD-UNLOAD STATIONS - A polishing apparatus and method for polishing semiconductor wafers uses multiple load-unload stations and at least one turn-over robotic wafer handing device to process the wafers so that the wafer can be polished at multiple polishing tables. The turn-over robotic wafer handing device operates to turn over the wafers so that one side of the wafers can be polished at a first polishing table and the other side of the wafers can then be polished at a second polishing table.03-05-2009
20080305721TREATING METHOD FOR BRITTLE MEMBER - An object of the present invention is to provide a treating method for brittle member capable of stably holding the brittle member when applying predetermined treatments such as transportation and grinding back surface of a brittle member such as a semi-conductor wafer and separating the brittle member without breakage after finishing required treatment to thereby attaining high thickness accuracy of the brittle member.12-11-2008
20090253355CMP ABRASIVE, METHOD FOR POLISHING SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME, AND ADDITIVE FOR CMP ABRASIVE - The present invention discloses a CMP abrasive comprising cerium oxide particles, a dispersant, an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished and water, a method for polishing a substrate comprising polishing a film to be polished by moving a substrate on which the film to be polished is formed and a polishing platen while pressing the substrate against the polishing platen and a polishing cloth and supplying the CMP abrasive between the film to be polished and the polishing cloth, a method for manufacturing a semiconductor device comprising the steps of the above-mentioned polishing method, and an additive for a CMP abrasive comprising an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished, and water.10-08-2009
20100099336Chemical mechanical polishing pad having integral identification feature - Chemical mechanical polishing pads having a polishing layer with a polishing surface adapted for polishing a substrate are provided, wherein the polishing layer has a unique integral identification feature; wherein the unique integral identification feature is non-polish active, wherein the unique integral identification feature comprises at least two visually distinct characteristics, wherein at least one of the at least two visually distinct indicia is a non-color based indicia, wherein one of the at least two visually distinct indicia is a color based indicia, and wherein the at least two visually distinct characteristics are selected to uniquely identify the chemical mechanical polishing pad as a type of chemical mechanical polishing pad selected from a plurality of types of chemical mechanical polishing pads; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate. Also provided is a method of making such polishing layers and for using them to polish a substrate.04-22-2010
20090275268METHOD FOR PRODUCING GLASS SUBSTRATE FOR MAGNETIC DISK - In the production of a glass substrate for magnetic disk, the present invention provides a method for producing a glass substrate for magnetic disk including a step of polishing a main surface of a circular glass substrate using a polishing pad made of a foamed resin while feeding a polishing liquid containing an abrasive, in which a polishing pad made of a foamed resin having an international rubber hardness of 45 IRHD or less, the hardness being measured at a dry state before contact with a slurry by the M method defined in JIS K6253, is used as a starting polishing pad and polishing is started after a polishing surface of the starting polishing pad is subjected to a dressing treatment to adjust the pad so that an open pore area ratio is 8% or more and an average circle equivalent diameter of open pores is 10 μm or more, in order to suppress an increase in roll-off in the polishing step of the main surface of the circular glass plate.11-05-2009
20090280724Method for Polishing Semiconductor Layers - The aqueous polishing method is useful for polishing semiconductor substrates including a TEOS layer and a SiOC layer. The method removes TEOS with a polishing composition having 0.05 to 50 weight percent abrasive, 0.001 to 2 weight percent lambda type carrageenan and an anionic surfactant. The lambda type carrageenan has a concentration useful for accelerating TEOS removal rate; and the anioinic surfactant is useful for suppressing removal rate of the SiOC layer.11-12-2009
20090280725Interpenetrating network for chemical mechanical polishing - Chemical mechanical polishing pads are provided, wherein the chemical mechanical polishing pads have a polishing layer comprising an interpenetrating network including a continuous non-fugitive phase and a substantially co-continuous fugitive phase. Also provided are methods of making the chemical mechanical polishing pads and for using them to polish substrates.11-12-2009
20120289126SAPPHIRE SUBSTRATES AND METHODS OF MAKING SAME - A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 μm/cm11-15-2012
20080293335METHODS AND APPARATUS FOR SUBSTRATE EDGE POLISHING USING A POLISHING ARM - Apparatus and methods adapted to polish an edge of a substrate include (1) a polishing tape having a polishing surface and a second surface and (2) a polishing arm having a longitudinal axis and adapted to force the polishing surface of the polishing tape into contact with an edge of a substrate. The polishing arm includes i) a polishing head adapted to contact the second surface of the polishing tape, ii) a rocker arm coupled to the polishing head and adapted to rotate the polishing head around the longitudinal axis of the polishing arm and iii) a load arm extending adjacent to the rocker arm and adapted to move the polishing head in a direction perpendicular to the longitudinal axis of the polishing arm. Numerous other aspects are provided.11-27-2008
20080293333METHODS AND APPARATUS FOR CONTROLLING THE SIZE OF AN EDGE EXCLUSION ZONE OF A SUBSTRATE - In some embodiments, a method of controlling a width of an edge exclusion zone of a substrate is provided. The method includes determining a range of angles over which to rotate a polishing head; rotating the polishing head over the determined range of angles to achieve a preset width for an edge exclusion zone of the substrate; and polishing an edge of the substrate with the polishing head. Numerous other aspects are provided.11-27-2008
20080305722Method for the single-sided polishing of bare semiconductor wafers - Single-sided polishing of bare semiconductor wafers is accomplished by using a polishing head with a membrane made of a resilient material by which polishing pressure is transmitted onto the backside of the semiconductor wafer to be polished, wherein the semiconductor wafer is pressed against a polishing cloth with a smooth surface while supplying a polishing agent, and is prevented from sliding off the membrane by a retainer ring. The retainer ring is provided with channels on a side surface facing the polishing cloth.12-11-2008
20080305720Method for Production of a Laminate Polishing Pad - Disclosed is a method for production of a laminate polishing pad which comprises a reduced number of steps and is excellent in productivity rate, and which causes no detachment between a polishing layer and a cushion layer and can prevent the groove clogging caused by a slurry or the like. Also disclosed is a laminate polishing pad produced by the method. A method for production of a laminate polishing pad, comprising the steps of: preparing a cell-dispersed urethane composition by a mechanical frothing process; ejecting the cell-dispersed urethane composition onto a cushion layer continuously while feeding the cushion layer; curing the cell-dispersed urethane composition while controlling the thickness of the composition evenly to form a polishing layer made of a polyurethane foam, thereby producing a long laminate sheet; and cutting the long laminate sheet.12-11-2008
20100056026POLISHING LIQUID COMPOSITION - A polishing liquid composition includes composite oxide particles containing cerium and zirconium, a dispersing agent, and an aqueous medium. A powder X-ray diffraction spectrum of the composite oxide particles obtained by CuKα1 ray (λ=0.154050 nm) irradiation includes a peak (first peak) having a peak top in a diffraction angle 2θ (θ is a Bragg angle) range of 28.61 to 29.67°, a peak (second peak) having a peak top in a diffraction angle 2θ range of 33.14 to 34.53°, a peak (third peak) having a peak top in a diffraction angle 2θ range of 47.57 to 49.63°, and a peak (fourth peak) having a peak top in a diffraction angle 2θ range of 56.45 to 58.91°. A half-width of the first peak is 0.8° or less.03-04-2010
20080311826Griding and/or Polishing Tool, and Use and Manufacturing Thereof - A grinding and/or polishing tool comprises a thin, substantially flat substrate, which has a grinding side to which grinding particles are applied, the substrate being substantially incompressible in a direction perpendicular to the grinding side, the grinding particles comprising diamond particles, and the grinding particles being fixed to the substrate by a curing plastic resin. Moreover, a grinding and/or polishing method is disclosed, in which such a grinding and/or polishing tool is used, and also a method of manufacturing such a grinding and/or polishing tool.12-18-2008
20080274672OPHTHALMIC BLOCKING PAD - An ophthalmic blocking pad includes a foam layer, a film layer disposed over and directly contacting the foam layer, and an adhesive layer disposed over the film layer. The film layer has a tensile strength of at least about 25 ksi (172 MPa).11-06-2008
20080214094METHOD FOR MANUFACTURING SILICON WAFER - A method for manufacturing a silicon wafer comprises a slicing step of a silicon single crystal ingot to obtain sliced wafers, a single-side grinding step to grind only one side of a wafer, and a smoothing step to smooth the other side of the wafer by controlling application of etchant depending on surface profile of the other side of the wafer. According to a method of the present invention a silicon wafer that has high flatness, is removed machine working damage, and is reduced of profile change of chamfer to be minimal can be manufactured.09-04-2008
20090029633METHOD OF POLISHING A SILICON-CONTAINING DIELECTRIC - A chemical-mechanical polishing system comprising: (a) ceria abrasive having an average particle size of about 180 nm or less and a positive zeta potential, (b) a polishing additive bearing a functional group with a pK01-29-2009
20090298395APPARATUS AND METHOD FOR REDUCING REMOVAL FORCES FOR CMP PADS - An improvement in a polishing apparatus for planarizing substrates comprises a tenacious coating of a low-adhesion material to the platen surface. An expendable polishing pad is adhesively attached to the low-adhesion material, and may be removed for periodic replacement at much reduced expenditure of force. Polishing pads joined to low-adhesion materials such as polytetrafluoroethylene (PTFE) by conventional adhesives resist distortion during polishing but are readily removed for replacement.12-03-2009
20100003898SUBSTRATE RETAINING RING FOR CMP - The edge effect or variation in polishing edge profile on a substrate undergoing CMP is reduced by structuring a retaining ring, housed in a carrier head for retaining the substrate, such that the polishing edge profile shifts back and forth with respect to the center of the substrate. Embodiments include structuring the retaining ring such that the width between inner and outer surfaces varies by an amount sufficient to compensate for polishing edge profile variation. Embodiments also include structuring the retaining ring such that the distance from the outer surface to the geometric inner surface varies. Embodiments further include structuring the retaining ring such that the distance between the outer surface to the perimeter of the substrate retained by the inner surface of the retaining ring varies.01-07-2010
20080318496METHODS OF CRYSTALLOGRAPHICALLY REORIENTING SINGLE CRYSTAL BODIES - A method of changing the crystallographic orientation of a single crystal body is disclosed that includes the steps of characterizing a crystallographic orientation of the single crystal body and calculating a misorientation angle between a select crystallographic direction of the single crystal body and a projection of the crystallographic direction along a plane of a first exterior major surface of the single crystal body. The method further includes removing material from at least a portion of the first exterior major surface to change the misorientation angle.12-25-2008
20080318495CMP APPARATUSES WITH POLISHING ASSEMBLIES THAT PROVIDE FOR THE PASSIVE REMOVAL OF SLURRY - Chemical mechanical planarization apparatuses with polishing assemblies that provide for the passive removal of slurry are provided. In accordance with an embodiment, a work piece polishing assembly comprises a polishing pad comprising a polishing surface and an exhaust aperture that extends through the polishing pad from the polishing surface and is configured to receive a slurry from the polishing surface. An underlying member is disposed underlying the polishing pad and comprises a peripheral surface. The underlying member comprises a channel that is in fluid communication with the aperture and that opens at the peripheral surface of the underlying member.12-25-2008
20100003897METHODS OF POLISHING AN OBJECT USING SLURRY COMPOSITIONS - In a slurry composition for chemical mechanical polishing, a method of preparing the slurry composition and a method of polishing an object using the slurry composition, the slurry composition includes a cerium oxide abrasive particle having a rare earth element other than cerium as a dopant, and an aqueous medium for dispersing the cerium oxide abrasive particle. The cerium oxide abrasive particle doped with the rare earth element may have an enhanced fracture strength as being compared with a pure cerium oxide abrasive particle, and also may reduce an amount of large or agglomerated particles and generation of a scratch on a polished surface of an object.01-07-2010
20090081929SMOOTHING AND/OR LAPPING TOOL PARTICULARLY FOR FINISHING STONE MATERIALS - The present invention relates to a finishing and/or polishing block-like tool of abrasive material, which includes at least one front working portion (03-26-2009
20090247054METHOD TO PREVENT SLURRY CAKING ON CMP CONDITIONER - A method of planarizing a semiconductor structure comprises moving a conditioning element on a surface of a polishing member, rotating the semiconductor structure relative to the polishing member against the surface of the polishing member, and rinsing the surface of the polishing member and the semiconductor structure. While the conditioning element is moved over the surface of the polishing member and the semiconductor structure is rotated against the surface of the polishing member, slurry is directed onto the polishing member. The step of rinsing comprises contacting the conditioning element to the surface of the polishing member.10-01-2009
20090253353POLISHING PAD - It is an object of the invention to provide a polishing pad capable of high precision optical detection of an endpoint during polishing in progress and prevention of slurry leakage from between a polishing region and a light-transmitting region during the use thereof even after the polishing pad has been used for a long period. It is a second object of the invention to provide a polishing pad capable of suppression of deterioration of polishing characteristics (such as in-plane uniformity) and generation of scratches due to a difference in behavior of a polishing region and a light-transmitting region during polishing. It is a third object of the invention to provide a polishing pad having a polishing region and a light-transmitting region with a concentration of a specific metal equal to or lower than a specific value (threshold value).10-08-2009
20090275267Method of manufacturing ferrule assemblies - A method of manufacturing a ferrule assembly. The method including first and second polishing operations. The first polishing operation including polishing only the end face of a ferrule of an assembly. The second polishing operation including polishing only the optical fiber of the assembly.11-05-2009
20120190277INSERT CARRIER AND METHOD FOR THE SIMULTANEOUS DOUBLE-SIDE MATERIAL-REMOVING PROCESSING OF SEMICONDUCTOR WAFERS - An insert carrier is configured to receive at least one semiconductor wafer for double-side processing of the wafer between two working disks of a lapping, grinding or polishing process. The insert carrier includes a core of a first material that has a first surface and a second surface, and at least one opening configured to receive a semiconductor wafer. A coating at least partially covers the first and second surfaces of the core. The coating includes a surface remote from the core that includes a structuring including elevations and depressions. A correlation length of the elevations and depressions is in a range of 0.5 mm to 25 mm and an aspect ratio of the structuring is in a range of 0.0004 to 0.4.07-26-2012
20090047872POLISHING PAD - To provide a polishing pad which is insusceptible to clogging of groove with abrasive particles and grinding dusts during polishing, and leads to little decrease in polishing rate even after long-term continuous use. A polishing pad of the present invention has a polishing layer formed of polyurethane resin foam having fine-cells, and asperity structure formed in a polishing surface of the polishing layer, and is featured in that the polyurethane resin foam is a reaction cured product between isocyanate-terminated prepolymer containing high-molecular-weight polyol component and isocyanate component, and a chain extender, and contains a silicon-based surfactant having combustion residue of not less than 8 wt %.02-19-2009
20110059683POLISHING COMPOSITION - A polishing composition includes a copolymer and an abrasive. The copolymer has a constitutional unit expressed as the following formula (I) and at least one of constitutional units expressed as the following formulae (II) to (IV). Methoxypolyethylene glycol methacrylate etc. are used as monomers for forming the constitutional unit of the formula (I), stearyl methacrylate etc. are used as monomers for forming the constitutional unit of the formula (II), polypropylene glycol methacrylate etc. are used as monomers for forming the constitutional unit of the formula (III), and styrene etc. are used as monomers for forming the constitutional unit of the formula (IV).03-10-2011
20110059682ADHESIVE SHEET AND PROCESS FOR MANUFACTURING ELECTRONIC PART - An adhesive sheet comprising a sheetlike base material and, superimposed on one major surface thereof, an adhesive layer, wherein the average surface roughness on one major surface of the base material is in the range of 0.1 to 3.5 μm and on the other major surface thereof is in the range of 0.05 to 0.7 μm. In this structure, the average surface roughness values on both the major surfaces of the base material as a constituent of the adhesive sheet are regulated so as to fall within respective specified ranges, so that not only can any blocking occurring in backwinding of reeled adhesive sheet be inhibited but also any occurrence of minute unevenness (waving) on the wafer surface after grinding can be inhibited, and further that the transparency of the adhesive sheet can be maintained.03-10-2011
20100227534Lower Unit for Glass Polishing System and Glass Polishing Method Using the Same - A lower unit for a glass polishing system includes a support installed to a rotatable turntable, and a carrier having a supporting part for supporting a glass to be polished, and a placing part formed in a surface opposite to the supporting part and fixed and placed to the support.09-09-2010
20100227533Chemical Mechanical Polishing Pad Having Window With Integral Identification Feature - Chemical mechanical polishing pads having a window with an integral identification feature, wherein the window has a polishing face and a nonpolishing face, wherein the integral identification feature is observable through the window, and wherein the integral identification feature identifies the chemical mechanical polishing pad as a type of chemical mechanical polishing pad selected from a plurality of types of chemical mechanical polishing pads. Also provided is a method of making such chemical mechanical polishing pads and for using them to polish a substrate selected from a magnetic substrate, an optical substrate and a semiconductor substrate.09-09-2010
20100221984POLISHING PAD MANUFACTURING METHOD - A method for manufacturing a polishing pad prevents slurry leaks and provides a pad that can be used to provide high optical detection accuracy. The method for manufacturing a polishing pad includes forming a groove for injecting a light-transmitting region forming material on the back surface of a polishing layer; injecting the light-transmitting region forming material into the groove and curing the material to form a light-transmitting region; and buffing the front surface of the polishing layer to expose the light-transmitting region on the front surface.09-02-2010
20100227535System and Method for Polishing Glass - A system for polishing a glass includes a lower unit capable of rotating a glass placed at a fixed position, an upper unit capable of contacting with the glass and being passively rotated due to the rotation of the glass, and a moving unit for moving the upper unit in a horizontal and/or vertical direction. The upper unit includes a fixed platter fixed to a spindle of the upper unit, a polishing platter installed movably with respect to the fixed platter, and a pressing member interposed between the fixed platter and the polishing platter so as to keep the uniformity of pressure applied from the polishing platter to the glass.09-09-2010
20100216375CYLINDRICAL GRINDER AND CYLINDRICAL GRINDING METHOD OF INGOT - A cylindrical grinder is disclosed that includes a support unit including an upper support device and a lower support device, in which an ingot of silicon single crystal is interposed in a direction of axis line between the upper support device and the lower support device and is clampingly held to be rotated around the axis line, and a grinding unit that relatively moves along the direction of axis line of the ingot to traverse grind an outer circumference of the ingot. The upper support device is placed at an upper position and the lower support device is placed at a lower position, so that the support unit clampingly holds the ingot in a state in which the direction of the axis line of the ingot is disposed along a vertical direction.08-26-2010
20090042490Three-dimensional network for chemical mechanical polishing - The polishing pad (02-12-2009
20090042487Polishing apparatus, polishing method, substrate manufacturing method, and electronic apparatus manufacturing method - A polishing apparatus is configured to simultaneously polish both surfaces of a work, and includes a pair of stools rotating in opposite directions, a pair of detecting units configured to detect rotation rates of the stools, a pressurizing unit configured to compress the work between the pair of the stools, a slurry supply unit configured to supply a slurry to the stool, and a control unit configured to reduce, when determining that a frictional force between the polishing surface and the work exceeds a threshold, at least one of a load applied by the pressurizing unit, the rotation rate of the stool, and a supply amount of the slurry supplied by the slurry supply unit.02-12-2009
20120196512POLISHING PAD AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A polishing pad includes a first pad portion and a second pad portion disposed therearound, and each of the first and second pad portions is replaced individually. A CMP apparatus with the polishing pad (first and second pad portions) attached thereto conducts polishing of a semiconductor wafer. The second pad portion is replaced with a replacement second pad portion when the total polishing time reaches a predetermined period of time.08-02-2012
20120034850METHOD FOR PRODUCING SILICON EPITAXIAL WAFER - The method for producing a silicon epitaxial wafer according to the present invention has: a growth step F at which an epitaxial layer is grown on a silicon single crystal substrate; a first polishing step D at which, before the growth step, at least a front surface of the silicon single crystal substrate is polished without using abrasive grains; and a second polishing step G at which at least the front surface of the silicon single crystal substrate is subjected to finish polishing after the growth step.02-09-2012
20100221985CHEMICAL-MECHANICAL PLANARIZATION PAD INCLUDING PATTERNED STRUCTURAL DOMAINS - An aspect of the present disclosure relates to a chemical mechanical planarization pad including a first domain and a second continuous domain wherein the first domain includes discrete elements regularly spaced within the second continuous domain. The pad may be formed by forming a plurality of openings for a first domain within a second continuous domain of the pad, wherein the openings are regularly spaced within the second domain, and forming the first domain within the plurality of openings in second continuous domain. In addition, the pad may be used in polishing a substrate with a polishing slurry.09-02-2010
20100197203METHOD FOR CREATING A COMPLEX SURFACE ON A SUBSTRATE OF GLASS - A method for creating a concave section of glass from a glass substrate having flat surfaces includes the use of a grinding wheel and a turntable. The method includes the steps of securing the glass substrates to the turntable. The turntable is then spun to create a turntable axis of rotation. The grinding wheel is rotated about a wheel axis of rotation such that the wheel axis of rotation is perpendicular to the turntable axis of rotation. The grinding wheel and the turntable move relative to each other along the turntable axis of rotation. The glass substrate is ground by the grinding wheel contacting the glass substrate to create the concave section of glass while the glass substrate is rotating about the wheel axis of rotation and moving relative to the turntable.08-05-2010
20090298394METHOD OF POLISHING SILICON WAFER - A silicon wafer is polished by applying a polishing solution substantially containing no abrasive grain onto a surface of a polishing pad having a given fixed grain bonded abrasive and then relatively sliding the polishing pad to a silicon wafer to polish the surface of the silicon wafer, wherein a hydroplane layer is formed by the polishing solution supplied between the surface of the silicon wafer and the surface of the polishing pad and a thickness of the hydroplane layer is controlled to change a polishing state of the surface of the silicon wafer.12-03-2009
20130130596SYNTHETIC QUARTZ GLASS SUBSTRATE POLISHING SLURRY AND MANUFACTURE OF SYNTHETIC QUARTZ GLASS SUBSTRATE USING THE SAME - In polishing of synthetic quartz glass substrates, a polishing slurry is used comprising (i) an oligopeptide comprising recurring units of pentapeptide: -[valine-proline-glycine-valine-glycine]- and having a molecular weight of 800-150,000 or a copolymer of the pentapeptide with another monomer, and (ii) a colloidal solution.05-23-2013
20100311312DOUBLE-SIDE POLISHING APPARATUS AND METHOD FOR POLISHING BOTH SIDES OF WAFER - The double-side polishing apparatus is capable of uniformly polishing a wafer and highly preventing an outer edge of the wafer from being damaged. The apparatus comprises: a lower polishing plate and an upper polishing plate for polishing both sides of the wafer; a carrier having a main body part, in which a through-hole for holding the wafer is formed. Edges of the through-hole in an upper face and a lower face of the carrier are coated with coating layers, which are composed of an abrasion-resistant material and which have a prescribed width and a prescribed thickness. A resin cushion ring, which has a prescribed width and whose thickness is equal to that of the main body part of the carrier, is provided to an inner circumferential face of the thorough-hole. The wafer is held in the resin cushion ring.12-09-2010
20100323586METHODS FOR PRODUCING AND PROCESSING SEMICONDUCTOR WAFERS - Semiconductor wafers are polished by a material-removing polishing process A, on both sides of the wafer, using an abrasive-free polishing pad, and a polishing agent which contains abrasive; and a material-removing polishing process B, on at least one side of the wafer, using a polishing pad with a microstructured surface containing no materials which contact the wafer which are harder than the semiconductor material, and a polishing agent is added which has a pH≧ to 10 and contains no substances with abrasive action. Preferred is a method for producing a semiconductor wafer, comprising the following ordered steps: separating a semiconductor single crystal into wafers; simultaneously processing both sides of the wafer by chip-removing processing; polishing the wafer, comprising a polishing process A and a polishing process B; and CMP of one side of the wafer, removing <1 μm.12-23-2010
20100184359METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device through a chemical mechanical polishing (CMP) process is provided. The CMP process is performed by using a slurry. The semiconductor device fabrication method can ensure the reliability and economical efficiency of the device by performing a CMP process using a CMP slurry having a high polishing selectivity with respect to a target surface, an anti-scratch characteristic, and a high global planarization characteristic.07-22-2010
20110034110METHODS AND SYSTEMS FOR MARRING FIBER OPTIC SUBSTRATES - Methods and systems for marring fiber optic substrates may include rollers with abrasive surfaces that press lengths of the substrates against elongated supports, which may be tapered, during relative lengthwise movement between the rollers and supports; abrasive sheets that are vibrated against the substrates; abrasive flap wheels that are rotated to cause flexible abrasive flaps on the wheels to strike the substrates; rotating blades that cut a transverse marring pattern in the substrates; hammers having abrasive surfaces that are oscillated to strike the substrates; and water jet abrasive slurries that are directed at the substrates.02-10-2011
20100136889TOOL FOR MACHINING STONE OR CONCRETE FLOORS - The invention relates to a machine and at least one tool (06-03-2010
20110212669METHOD FOR MANUFACTURING GLASS SUBSTRATE FOR MAGNETIC RECORDING MEDIUM - The present invention relates to a method for manufacturing a disk-shaped glass substrate for a magnetic recording medium, having a circular hole at the center thereof, the method including: a shape-forming step of performing shape forming to a glass substrate having a sheet shape; a polishing step of polishing a main surface of the glass substrate; and a cleaning step of cleaning the glass substrate, in which the polishing step includes a finish polishing step of simultaneously polishing both main surfaces of the glass substrate using a polishing slurry containing abrasives having an average particle diameter of 100 nm or less; and the glass substrate polished in the finish polishing step has a thickness deviation among glass substrates polished in the same lot of 1.5 μm or less.09-01-2011
20110130077POLISHING PAD, COMPOSITION FOR THE MANUFACTURE THEREOF, AND METHOD OF MAKING AND USING - A polyurethane layer for forming a polishing pad for a semiconductor wafer is described, wherein the polyurethane layer comprises: a foamed polyurethane, wherein the polyurethane foam has a density of about 640 to about 960 kg/m06-02-2011
20110244762METHOD FOR THE DOUBLE-SIDE POLISHING OF A SEMICONDUCTOR WAFER - A method for double-side polishing of a semiconductor wafer includes situating the semiconductor wafer in a cutout of a carrier that is disposed in a working gap between an upper polishing plate covered by a first polishing pad and a lower polishing plate covered by a second polishing pad. The first and second polishing pads each include tiled square segments that are formed by an arrangement of channels on the pads, where the square segments of the first pad are larger than the segments of the second pad. The square segments of the polishing pads include abrasives. During polishing, the carrier is guided such that a portion of the wafer temporarily projects laterally outside of the working gap. A polishing agent with a pH that is variable is supplied during polishing at a pH in a range of 11 to 12.5 during a first step and at a pH of at least 13 during a second step.10-06-2011
20110244761Method of making conductive Group lll Nitride single crystal substrate - A method of making a conductive group III nitride single crystal substrate includes feeding to a seed crystal a group III raw material gas, a group V raw material gas, and a doping raw material gas diluted with N10-06-2011
20090239450PROCESS FOR PRODUCING GLASS SUBSTRATE FOR MAGNETIC DISKS - In the production of a glass substrate for magnetic disks, in a step of polishing a main surface of a circular glass plate, roll-off is reduced without reducing the polishing rate.09-24-2009
20100003896POLISHING PAD - A polishing pad capable of maintaining a high level of dimensional stability during absorption of moisture or water includes a polishing layer including a polyurethane foam having fine cells, wherein the polyurethane foam includes a cured product of a reaction of an isocyanate-terminated prepolymer (A), a polymerized diisocyanate, and a chain extender, and the isocyanate-terminated prepolymer (A) includes an isocyanate monomer, a high molecular weight polyol (a), and a low molecular weight polyol. A method for manufacturing such a polishing pad includes mixing a first component containing an isocyanate-terminated prepolymer with a second component containing a chain extender and curing the mixture to form a polyurethane foam. The pad so made is used in the manufacture of semiconductor devices.01-07-2010
20090036032TEMPERATURE CONTROL FOR ECMP PROCESS - Methods for polishing a substrate are provided. In one embodiment, the method includes pressing a substrate against a pad assembly disposed on rotating platen assembly, the pad assembly comprising an electrode coupled to a power source, flowing an electrolyte fluid onto the pad assembly, wherein the electrolyte fluid is in contact with the substrate and the electrode, creating an electrical bias between the electrode and the substrate, and heating the electrolyte fluid with an infrared lamp to a temperature of at least 10 degrees Celsius above room temperature.02-05-2009
20100062688CARRIER PLATE HOLDING AN ABRADING ELEMENT AND ABRADING PLATE - The invention concerns a carrier plate holding an abrading element, for detachable mounting on a rotatably mounted abrading plate driven during use, for abrading stone or concrete floors, which carrier plate has sides which form an acute angle with each other. The sides have flanges which are formed for surrounding engagement with a shoulder arranged on the abrading plate so that the carrier plate can be fixed on the abrading plate with an engagement based on form and friction03-11-2010
20090215362Methods and Tool for Maintenance of Hard Surfaces, and a Method for Manufacturing Such a Tool - A method is disclosed for treating or maintaining a hard surface comprising a stone or stone-like material, the method comprising treatment of the surface with a flexible pad, in the presence of abrasive particles, bonded to the pad, on a contact surface between the pad and the hard surface, wherein the abrasive particles comprise diamond particles, and the treatment is performed in the absence of an effective amount of crystallization agent on the contact surface. The treatment is performed on a substantially regular basis, such as daily, weekly or monthly, and the treatment is performed using a pad comprising an open, lofty, three dimensional non-woven webs of fibers. A tool for use in the method is also provided, as well as a floor-surfacing machine comprising such a tool and a method for manufacturing such a tool. Furthermore, methods for treating or maintaining hard, smooth surfaces such as wood, polymer material, lacquer, linoleum, gelcoat, glass and automotive enamel are disclosed.08-27-2009
20110097974METHOD FOR POLISHING A SEMICONDUCTOR WAFER - A method of polishing a semiconductor wafer using a holding system including a lined cutout the size of the semiconductor wafer that is fixed to a carrier. The method includes holding the semiconductor wafer in the cutout through adhesion of a first side of the semiconductor wafer to a bearing surface in the cutout and polishing a second side of the held semiconductor wafer using a polishing pad that is fixed on a polishing plate while introducing a polishing agent between the second side of the semiconductor wafer and the polishing pad, the polishing pad including fixedly bonded abrasive materials. The carrier is guided during polishing such that a portion of the second side of the semiconductor wafer temporarily projects beyond a lateral edge of a surface of the polishing pad.04-28-2011
20110081836METHOD FOR GRINDING A SEMICONDUCTOR WAFER - A method for processing a semiconductor wafer includes bringing at least one grinding tool in contact with the semiconductor wafer; removing material from the semiconductor wafer using the grinding tool; disposing a liquid medium having a viscosity of at least 3×1004-07-2011
20110070810MULTIPLE ZONE CARRIER HEAD WITH FLEXIBLE MEMBRANE - A carrier head for chemical mechanical polishing of a substrate includes a base and a flexible membrane extending beneath the base. The flexible membrane includes a central portion with an outer surface providing a substrate receiving surface, a perimeter portion connecting the central portion to the base, and at least one flap extending from an inner surface of the central portion. The flap divides a volume between the flexible membrane and the base into a plurality of chambers, and the flap includes a laterally extending first section and an angled second section extending beneath the first section and connecting the laterally extending first section to the central portion.03-24-2011
20110256811POLISHING METHOD - A polishing method can obtain a good polishing profile which, for example, will not cause peeling of a semiconductor layer from a silicon substrate. The polishing method includes: positioning a polishing head at a position above a polishing start position in an edge portion of a rotating substrate; lowering a polishing tool of the polishing head until the polishing tool comes into contact with the polishing start position in the edge portion of the rotating substrate and a pressure between the polishing tool and the polishing start position reaches a set pressure; allowing the polishing tool to stay at the polishing start position for a predetermined amount of time; and then moving the polishing head toward a peripheral end of the substrate while keeping the polishing tool in contact with the edge portion of the rotating substrate at the set pressure.10-20-2011
20100311311Carrier Head Membrane - A flexible membrane includes a horizontal central portion, a vertical portion coupled to the central portion, a thick rim portion coupled to the vertical portion, and an extension coupled to the thick rim portion. An outer surface of the horizontal central portion provides a mounting surface configured to receive a substrate. The thick rim portion has a thickness that is greater than a portion directly adjacent to the thick rim portion. The thick rim portion is between the extension and the vertical portion and a greatest dimension of the extension is less than the thickness of the thick rim portion.12-09-2010
20110053465METHOD AND APPARATUS FOR LOCAL POLISHING CONTROL - A method and apparatus for local polishing and deposition control in a process cell is generally provided. In one embodiment, an apparatus for electrochemically processing a substrate is provided that selectively polishes discrete conductive portions of a substrate by controlling an electrical bias profile across a processing area, thereby controlling processing rates between two or more conductive portions of the substrate.03-03-2011
20110028073CMP POLISHING SLURRY AND POLISHING METHOD - The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and α-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.02-03-2011
20100285726METHOD FOR MANUFACTURING A GLASS SUBSTRATE FOR A MAGNETIC DISC - The invention aims at providing a method for manufacturing a glass substrate for a magnetic disc capable of eliminating undulations of an outer peripheral end face of a glass substrate in a short processing time, and obtaining high roundness. In a method for manufacturing a disc-like glass substrate for a magnetic disc, the method includes a forming step of pressing a rotating grindstone against an outer peripheral end face while the glass substrate is rotated, thereby forming an outer peripheral end. In the forming step, processing is performed using a first condition (S11-11-2010
20100015893POLISHING PAD - An object of the invention is to provide a polishing pad having excellent planarization performance and wear resistance and to provide a method for manufacture thereof. The invention is directed to a polishing pad including a polishing layer including a polyurethane foam having fine cells, wherein the polyurethane foam is a cured product of a reaction of (1) an isocyanate-terminated prepolymer (A) that is capable of reacting with 4,4′-methylenebis(o-chloroaniline) to form a non-foamed polyurethane having a tan δ peak temperature of 100° C. or more, (2) an isocyanate-terminated prepolymer (B) that is capable of reacting with 4,4′-methylenebis(o-chloroaniline) to form a non-foamed polyurethane having a tan δ peak temperature of 40° C. or less, and (3) 4,4′-methylenebis(o-chloroaniline), and the isocyanate-terminated prepolymers (A) and (B) are mixed in an (A)/(B) ratio of 50/50 to 90/10 (by wt %).01-21-2010
20100323585Method For Chemically Grinding A Semiconductor Wafer On Both Sides - A semiconductor wafer processed on both sides simultaneously, the wafer lying in freely movable fashion in a cutout in one of a plurality of carriers that rotate by means of a rolling apparatus, and one thereby being moved on a cycloidal trajectory, the semiconductor wafer being processed in material-removing fashion between two rotating ring-shaped working disks, wherein each working disk comprises a working layer comprising abrasive material, and wherein an alkaline medium comprising no abrasive material is supplied during the processing.12-23-2010
20100330883Method For The Local Polishing Of A Semiconductor Wafer - The edge region of one side of a semiconductor wafer is polished by pressing the wafer by means of a rotatable polishing head against a polishing pad lying on a rotating polishing plate, and containing fixed abrasive. The polishing head is provided with a resilient membrane radially subdivided into a plurality of chambers by gas or liquid cushions, the polishing pressure independently selectable for each chamber. The wafer is held in position during polishing by a retainer ring pressed against the polishing pad with an application pressure, a polishing agent is introduced between the wafer and the polishing pad, and the polishing pressure exerted on the wafer in a chamber lying in the edge region of the wafer of the polishing head, and the application pressure of the retainer ring, are selected so that material is essentially removed only at the edge of the wafer.12-30-2010
20100120335Partial Contact Wafer Retaining Ring Apparatus - The partial contact wafer retaining ring apparatus is disclosed. For example, one disclosed embodiment provides a wafer retaining ring comprising a ring for retaining the wafer, the ring having an inner diameter surface configured to restrict lateral wafer motion, and at least one interface surface configured to interface with a polishing surface. The interface surface comprises a recessed section adjacent to the ring inner diameter, configured to preclude contact between the recessed section and the polishing surface.05-13-2010
20110151752PROCESS FOR PRODUCING GLASS SUBSTRATE - The present invention relates to a process for producing a glass substrate, the process including: a lapping step of grinding a main surface of a glass substrate; and a main-surface polishing step of polishing the main surface of the glass substrate after the lapping step, in which the lapping step includes: a primary lapping step of grinding the main surface of the glass substrate with a free abrasive or a fixed abrasive; a secondary lapping step of grinding the main surface of the glass substrate with a fixed abrasive having a smaller particle size than the free abrasive or the fixed abrasive used in the primary lapping step; and a cleaning step of cleaning the main surface of the glass substrate by at least one selected from the group consisting of ultrasonic cleaning, scrub cleaning and acid cleaning, after the primary lapping step but before the secondary lapping step.06-23-2011
20120309269LOW-TEMPERATURE METHODS FOR SPONTANEOUS MATERIAL SPALLING - Method to (i) introduce additional control into a material spalling process, thus improving both the crack initiation and propagation, and (ii) increase the range of selectable spalling depths are provided. In one embodiment, the method includes providing a stressor layer on a surface of a base substrate at a first temperature which is room temperature. Next, the base substrate including the stressor layer is brought to a second temperature which is less than room temperature. The base substrate is spalled at the second temperature to form a spalled material layer. Thereafter, the spalled material layer is returned to room temperature, i.e., the first temperature.12-06-2012
20110189928WAFER MOUNT TAPE, WAFER PROCESSING APPARATUS AND METHOD OF USING THE SAME FOR USE IN THINNING WAFERS - A wafer mount tape, a wafer processing apparatus and an associated method of using the wafer mount tape for use in wafer thinning operations is presented. The wafer mount tape includes a tape body, a first adhesive member and a second adhesive member. The tape body has a first region, a second region and a third region. The first region of the tape body is for being disposed onto a wafer. The second region of the tape body is defined along a periphery of the first region. The third region of the tape body is defined along a periphery of the second region. The first adhesive is member is disposed at the first region. The second adhesive member is disposed at the third region.08-04-2011
20100029182POLISHING PAD - A polishing pad of excellent durability has a polishing layer is arranged on a base material layer, and the polishing layer comprises a thermosetting polyurethane foam having roughly spherical interconnected cells with an average cell diameter of 35 to 300 μm.02-04-2010
20110065364METAL CATIONS FOR INITIATING POLISHING - The invention provides methods for planarizing or polishing a metal surface. The method comprises a composition comprising an abrasive, cesium ions, and a liquid carrier comprising water.03-17-2011
20110117822DRESSING JIG FOR GLASS SUBSTRATE POLISHING PAD - Dressing treatment of a polishing pad, adjusting a polishing surface of the polishing pad to given flatness and surface roughness without deteriorating productivity, a method for polishing a glass substrate, including polishing a main surface of a glass substrate using the polishing pad adjusted by the dressing treatment, and a method for manufacturing a glass substrate using the polishing method are provided. A dressing jig having arithmetic surface roughness on a surface performing dressing treatment of from 0.10 μm to 2.5 μm is used as the dressing jig for adjusting a polishing surface of the polishing pad to given flatness and surface roughness. A main surface of the glass substrate is polished with the polishing surface of the polishing pad having been subjected to a dressing treatment using the dressing jig.05-19-2011
20100062687CERIUM OXIDE POWDER FOR ABRASIVE AND CMP SLURRY COMPRISING THE SAME - Disclosed are cerium oxide powder for an abrasive; CMP slurry including the same; and a shallow trench isolation (STI) process using the CMP slurry. At least two kinds of cerium oxides prepared by using cerium carbonates having different crystal structures are mixed in an appropriate ratio and used as an abrasive for CMP slurry, thereby adjusting required polishing properties of the CMP slurry. Also, in a disclosed method of preparing a cerium carbonate, the crystal structure of the cerium carbonate can be easily controlled. Based on the finding that in a cerium oxide for an abrasive, the kind of improved polishing property depends on the crystal structure of a cerium carbonate, at least one from among polishing properties, such as the polishing rate of a silicon oxide layer, the polishing rate of a silicon nitride layer, the polishing selectivity between the silicon oxide layer and the silicon nitride layer, and WIWNU, can be adjusted by using at least two kinds of cerium oxides selected from the group including (i) a cerium oxide prepared by using a lanthanite-(Ce) crystal structured cerium carbonate, (ii) a cerium oxide prepared by using an orthorhombic crystal structured cerium carbonate, and (iii) a cerium oxide prepared by using a hexagonal crystal structured cerium carbonate, as an abrasive for CMP slurry, and adjusting the mixing ratio of the cerium oxides.03-11-2010
20100330882Polishing Pad and Method For Polishing A Semiconductor Wafer - A semiconductor wafer is polished, wherein in a first step, the rear side of the wafer is polished by a polishing pad comprising fixedly bonded abrasives having a grain size of 0.1-1.0 μm, while supplying a polishing agent free of solid materials having a pH of at least 11.8, and, in a second step, the front side of the semiconductor wafer is polished, wherein a polishing agent having a pH of less than 11.8 is supplied. A polishing pad for use in apparatuses for polishing semiconductor wafers, has a layer containing abrasives, a layer composed of a stiff plastic and also a compliant, non-woven layer, wherein the layers are bonded to one another by means of pressure-sensitive adhesive layers.12-30-2010
20110136411METHOD AND APPARATUS FOR POLISHING A SUBSTRATE HAVING A GRINDED BACK SURFACE - A method capable of quickly polishing an angular portion formed by a grinded back surface and a circumferential surface of a substrate without causing damages on the thin substrate is provided. The method includes rotating the substrate about its center, and pressing a polishing tape against the angular portion formed by the back surface and the circumferential surface of the substrate to polish the angular portion.06-09-2011
20120040591Replaceable cover for membrane carrier - A replaceable cover secured to the surface of a membrane positioned on a wafer carrier.02-16-2012
20120156970METHOD FOR THE SIMULTANEOUS MATERIAL-REMOVING PROCESSING OF BOTH SIDES OF AT LEAST THREE SEMICONDUCTOR WAFERS - A method for the simultaneous material-removing processing of both sides of at least three semiconductor wafers includes providing a double-side processing apparatus including two rotating ring-shaped working disks and a rolling apparatus. The carriers are arranged in the double-side processing apparatus and the openings are disposed in the carriers so as to satisfy the inequality:06-21-2012
20120309270POLISHING PAD - An object of the invention is to provide a polishing pad which has a polishing layer with a phase-separated structure and can provide high polishing rate and high planarization property and with which scratching can be suppressed. The polishing pad comprises the polishing layer. The polishing layer comprises a product of curing reaction of a polyurethane-forming raw material composition containing: (A) an isocyanate-terminated prepolymer obtained by reaction of a prepolymer-forming raw material composition (a) containing an isocyanate component and a polyester-based polyol; (B) an isocyanate-terminated prepolymer obtained by reaction of a prepolymer-forming raw material composition (b) containing an isocyanate component and a polyether-based polyol; and a chain extender, wherein the product of curing reaction has a phase-separated structure.12-06-2012
20110318996METHOD FOR MANUFACTURING ELECTRONIC GRADE SYNTHETIC QUARTZ GLASS SUBSTRATE - An electronic grade synthetic quartz glass substrate having a recess, channel or step is manufactured by machining at least one surface of a synthetic quartz glass substrate having a maximum birefringence of up to 3 nm/cm in its entirety to form a recess, channel or step, and removing the residual stress due to machining.12-29-2011
20110318994METHOD OF PREPARING AN EDGE-STRENGTHENED ARTICLE - A method of preparing an edge-strengthened article comprises polishing of an edge of an article having a first edge strength using magnetorheological finishing, wherein after the polishing the article has a second edge strength and the second edge strength is greater than the first edge strength.12-29-2011
20110318995METHOD FOR MANUFACTURING ELECTRONIC GRADE SYNTHETIC QUARTZ GLASS SUBSTRATE - An electronic grade synthetic quartz glass substrate is manufactured by machining a synthetic quartz glass substrate to form a recess, channel or step and polishing the bottom and side surfaces of the recess, channel or step to mirror finish by a working portion of a rotary polishing tool while keeping the working portion in contact with the bottom and side surfaces under independent constant pressures.12-29-2011
20080233840Method For The Simultaneous Grinding Of A Plurality Of Semiconductor Wafers - Simultaneous double-side grinding of a plurality of semiconductor wafers involves positioning each wafer freely in a cutout of one of plural carriers which rotate on a cycloidal trajectory, wherein the wafers are machined between two rotating ring-shaped working disks, each disk having a working layer of bonded abrasive, wherein the form of the working gap between working layers is determined during grinding and the form of the working area of at least one disk is altered such that the gap has a predetermined form. The wafers, during machining, may temporarily overhang the gap. The carrier is optionally composed only of a first material, or is completely or partly coated with the first material such that during machining only the first material contacts the working layer, and the first material does not reduce the machining ability of the working layer.09-25-2008
20090253354POLISHING COMPOSITIONS AND USE THEREOF - Slurry compositions comprising abrasive particles and solid lubricant particles are useful for planiarizing surfaces, and preventing delamination and scratches.10-08-2009
20120045972A CERIUM-BASED PARTICLE COMPOSITION AND THE PREPARATION THEREOF - A cerium based particle composition comprises: 50-90% by weight of cerium oxide, and at least 10% by weight of lanthanum oxide. The method to prepare the particle composition comprises: one or more water soluble salts of transition metal elements and/or alkaline metal elements are mixed with CeLaCl02-23-2012
20120045971METHOD OF MANUFACTURING GLASS SUBSTRATE FOR MAGNETIC RECORDING MEDIA - The invention provides a method of manufacturing a glass substrate for magnetic recording media. And the glass substrate has high surface smoothness and little waviness. In the primary, secondary and tertiary lapping process, diamond pads 02-23-2012
20090163117METHOD OF PRODUCING GLASS SUBSTRATE FOR PERPENDICULAR MAGNETIC RECORDING DISK - A glass substrate for perpendicular magnetic recording, having a surface with an average surface roughness of 2.0 Å or less and surface height variations of 1 Å or less with wavelengths in the range of 0.05 mm-0.5 mm in both radial and circumferential directions, is produced by rotating a glass substrate, supplying polishing slurry containing a specified amount of abrading particles of artificial diamond on its surface, pressing a polishing tape on the surface and causing this polishing tape to travel in a direction opposite to the direction of rotation of the glass substrate.06-25-2009
20120252324Chemical Mechanical Polishing Pad and Methods of Making and Using Same - A method of making shape memory chemical mechanical polishing pads is provided, wherein the shape memory chemical mechanical polishing pads comprise a polishing layer in a densified state. Also provided is a method for using the shape memory chemical mechanical polishing pads to polish substrates.10-04-2012
20120015588METHODS AND SYSTEMS FOR MARRING FIBER OPTIC SUBSTRATES - A method of marring a fiber optic substrate by directing a water jet abrasive slurry at the substrate while causing relative movement between an elongate support for the substrate and the water jet abrasive slurry to produce a marring pattern on the substrate. The pressure of the water jet abrasive slurry and/or the rate of relative movement between the elongate support and the water jet abrasive slurry may be varied to produce a variable marring pattern on the substrate.01-19-2012
20110165824GLASS SUBSTRATE FOR INFORMATION RECORDING MEDIUM AND METHOD FOR MANUFACTURING THE SAME - The present invention relates to a method for manufacturing a glass substrate for an information recording medium having a high level of cleanness and superior smoothness. The manufacturing method includes a step for washing a disk-shaped glass plate with an acid washing liquid, a step for removing at least part of a surface layer, which is formed on the surface of the glass plate, by performing grinding with diamond abrasion grains, and a step for washing the surface with a neutral or alkaline washing liquid.07-07-2011
20110165823SEMICONDUCTOR SUBSTRATE PLANARIZATION APPARATUS AND PLANARIZATION METHOD - A planarization apparatus and method that thins and planarizes a substrate by grinding and polishing the rear surface of the substrate with high throughput, and that fabricates a semiconductor substrate with reduced adhered contaminants. A planarization apparatus that houses various mechanism elements in semiconductor substrate loading/unloading stage chamber, a rear-surface polishing stage chamber, and a rear-surface grinding stage chamber. The throughput time of the rear-surface polishing stage that simultaneously polishes two substrates is typically about double the throughput time of the rear-surface grinding stage that grinds one substrate.07-07-2011
20120058713METHOD FOR CONSTRUCTION, STRENGTHENING AND HOMOGENIZATION OF A WAFER - The present invention provides a method for strengthening, homogenization and construction of a wafer. The concave and convex portions are processed by laser or etching, and then formed at intervals on the grinding surface of the wafer. The concave and convex portions are round or polygonal shapes. With the alternated arrangement of the concave and convex portions, a mesh structure of consistent construction is formed on the grinding surface of the wafer, making it possible to cut down greatly the interference and influence generated by the texture of grinding surface, and improve substantially the structural strength of the grinding surface for a consistent quality of wafer with better applicability and industrial benefits.03-08-2012
20120058712POLISHING PADS FOR CHEMICAL MECHANICAL PLANARIZATION AND/OR OTHER POLISHING METHODS - Embodiments herein provide polishing pads that produce high post-polish planarity, such as on a wafer substrate or other substrates. Exemplary pads include a bulk matrix and embedded polymer particles. Pads according to embodiments herein may be used to remove material over a composite substrate, comprised of two or more different materials, or a substrate comprised of a single material.03-08-2012
20090286454SUBSTRATE FOR INFORMATION RECORDING MEDIA AND MANUFACTURING METHOD THEREOF, INFORMATION RECORDING MEDIUM, AND STARTING MATERIAL GLASS PLATE - A substrate for use as a disk substrate in a hard disk drive or the like, an information recording medium such as a magnetic disk, and a starting material glass plate which is a starting material of the substrate for information recording media. The forming conditions of the starting material glass plate are controlled such that the starting material glass plate has a long-wavelength waviness of not more than 6 nm. This starting material glass plate is polished so as to have a long-wavelength waviness of not more than 6 nm using CeO11-19-2009
20090104852Carrier, Method For Coating A Carrier, and Method For The Simultaneous Double-Side Material-Removing Machining Of Semiconductor Wafers - Carriers suitable for receiving one or more semiconductor wafers for the machining thereof in lapping, grinding or polishing machines, comprise a core of a first material which has a high stiffness, the core being completely or partly coated with a second material, and also at least one cutout for receiving a semiconductor wafer, wherein the second material is a thermoset polyurethane elastomer having a Shore A hardness of 20-90. The carriers are preferably coated with the second material after chemical surface activation and application of adhesion promoter, and may be used for simultaneous double-side material-removing machining of a plurality of semiconductor wafers.04-23-2009
20120071064FIXED ABRASIVE-GRAIN PROCESSING DEVICE, METHOD OF FIXED ABRASIVE-GRAIN PROCESSING, AND METHOD FOR PRODUCING SEMICONDUCTOR WAFER - Disclosure relates to a fixed abrasive-grain processing device and a method of fixed abrasive-grain processing used for producing a semiconductor wafer, and a method for producing a semiconductor wafer which make the surface of the semiconductor wafer possible to have preferable flatness and which can prevent the number of steps and the installation area of facilities from increasing. The producing of semiconductor wafers uses a fixed abrasive-grain processing device including a lower fixed abrasive-grain layer that is adjacent to the top surface of the lower surface-plate and that grinds the top surfaces of the plurality of semiconductor wafers; an upper fixed abrasive-grain layer that is adjacent to the bottom surface of the upper surface-plate and that grinds the bottom surfaces of the plurality of semiconductor wafers; a carrier plate that is horizontally interposed between the lower surface-plate and the upper surface-plate and that includes a plurality of holes each accommodating one of the plurality of semiconductor wafers; and a carrier rotating device that circularly moves the carrier plate, wherein the lower fixed abrasive-grain layer and the upper fixed abrasive-grain layer include fixed abrasive grain having a diameter of 4 μm or less and being dispersed and fixed in elastic members.03-22-2012
20120156971METHOD AND TOOL FOR MAINTENANCE OF HARD SURFACES, AND A METHOD FOR MANUFACTURING SUCH A TOOL - A method is disclosed for maintaining a hard surface, the method comprising treating of the surface with a flexible pad (06-21-2012
20110045745Doped Ceria Abrasives with Controlled Morphology and Preparation Thereof - The present invention relates to doped ceria (CeO2) abrasive particles, having an essentially octahedral morphology. Such abrasives are used in water-based slurries for Chemical Mechanical Polishing (CMP) of subrates such as silicon wafers. The invention more particularly concerns yttrium-doped ceria particles having a specific surface area of 10 to 120 m2/g, characterized in that at least 95 wt %, preferably at least 99 wt %, of the particles are mono-crystalline and in that the particles' surfaces consist of more than 70%, preferably of more than 80%, of planes parallel to {111} planes. A novel gas phase process for synthesizing this product is also disclosed, comprising the steps of providing a hot gas stream, —and, introducing into said gas stream a cerium-bearing reactant, a dopant-bearing reactant, and an oxygen-bearing reactant, —the temperature of said gas stream being chosen so as to atomize said reactant, the reactant being selected so as to form, upon cooling, doped ceria particles. Abrasive slurries based on the above ceria offer a low level of induced detectivity in the polished substrate, while ensuring a good removal rate.02-24-2011
20110092138Method of manufacturing ferrule assemblies - A method of manufacturing a ferrule assembly. The method including first and second polishing operations. The first polishing operation including polishing only the end face of a ferrule of an assembly. The second polishing operation including polishing only the optical fiber of the assembly.04-21-2011
20110104995CARRIER FOR A DOUBLE-SIDE POLISHING APPARATUS, DOUBLE-SIDE POLISHING APPARATUS USING THIS CARRIER, AND DOUBLE-SIDE POLISHING METHOD - A carrier for a double-side polishing apparatus comprising at least: a metallic carrier base that is arranged between upper and lower turn tables having polishing pads attached thereto and has a holding hole formed therein to hold a wafer sandwiched between the upper and lower turn tables at the time of polishing; and a ring-like resin insert that is arranged along an inner peripheral portion of the holding hole of the carrier base and is in contact with a peripheral portion of the held wafer, wherein an inner peripheral end portion of the holding hole of the carrier base has an upwardly opening tapered surface, an outer peripheral portion of the ring-like insert has a reverse tapered surface with respect to the tapered surface of the holding hole of the carrier base, and the resin insert is fitted in the holding hole of the carrier base through the tapered surface.05-05-2011
20110104994SEMICONDUCTOR WAFER RE-USE USING CHEMICAL MECHANICAL POLISHING - Methods and apparatus for reducing damage of a semiconductor donor wafer include the steps of: (a) rotating a polishing pad, rotating the semiconductor donor wafer, applying a polishing slurry to the polishing pad, and pressing the semiconductor donor wafer and the polishing pad together; and (b) rotating the polishing pad and the semiconductor donor wafer, discontinuing the application of the polishing slurry, applying a rinsing fluid to the polishing pad, and, pressing the semiconductor donor wafer and the polishing pad together, wherein step (a) followed by step (b) is carried out in sequence at least two times, and at least one of the following are reduced in at least two successive intervals of step (a): (i) a pressure at which the semiconductor donor wafer and the polishing pad are pressed together, (ii) a mean particle size of an abrasive within the polishing slurry, and (iii) a concentration of the slurry in water and stabilizers.05-05-2011
20110183582METHOD FOR PRODUCING A SEMICONDUCTOR WAFER - A method of producing a semiconductor wafer includes a plurality of steps carried out in the following order. Simultaneous double-side material-removal processing is carried out on a semiconductor wafer sliced from a single crystal by processing the semiconductor wafer between two rotating ring-shaped working disks. Each working disk includes first abrasives having an average grain size in a range of 5.0 to 20.0 μm. Both sides of the semiconductor wafer are treated with an alkaline medium. Grinding of the front and rear sides of the semiconductor wafer is carried out. For the grinding of each side a first side is held using a wafer holder and the other side is processed using a grinding tool. The grinding tool includes second abrasives having an average grain size that is smaller than the average grain size of the first abrasives and having an average grain size being in a range of 1.0 to 10.0 μm. Both sides are polished using a polishing pad including third abrasives having an average grain size in a range of 0.1 to 1.0 μm. The front side is polished using a stock removal polishing pad that is free of abrasives and a polishing agent containing fourth abrasives. The front side is then chemical mechanical polished.07-28-2011
20100048102POLISHING PAD - A polishing pad capable of maintaining a high level of dimensional stability upon moisture absorption or water absorption and providing high polishing rate includes a polishing layer of a polyurethane foam having fine cells, wherein the polyurethane foam includes a cured product of a reaction of (1) an isocyanate-terminated prepolymer (A) that includes an isocyanate monomer, a high molecular weight polyol (a), and a low molecular weight polyol, (2) an isocyanate-terminated prepolymer (B) that includes a polymerized diisocyanate and a polyethylene glycol with a number average molecular weight of 200 to 1,000, and (3) a chain extender.02-25-2010
20100273399CMP POROUS PAD WITH PARTICLES IN A POLYMERIC MATRIX - The invention provides a chemical-mechanical polishing pad comprising a polymeric matrix and 0.1-15 wt. % of metal oxide particles. The polymeric matrix has pores, the metal oxide particles are uniformly distributed throughout the pores, and the metal oxide particles have a specific surface area of about 25 m10-28-2010
20100009602PORTABLE OPTICAL FIBER POLISHER - A polisher has an offset axis and a friction cam useful in a method of polishing that comprises a more random, elongated polishing pattern than known orbital polishers and is capable of portable use using a 9 volt battery. The method is capable of using lower contact pressures between fiber ends and a polishing surface and higher rates of rotation of the drive mechanism, reducing the polishing time for preparing fiber ends for applications. The polishing pattern changes when pressure is applied between a fiber end and the polishing surface. The fiber end provides one intermittent axis of rotation and the friction cam provides another intermittent axis of rotation.01-14-2010
20120083189CHEMICAL MECHANICAL POLISHING APPARATUS HAVING PAD CONDITIONING DISK AND PRE-CONDITIONER UNIT - A pad conditioning disk, a pre-conditioning unit, and a CMP apparatus having the same are provided. The pad conditioning disk includes a base in which mountain-type tips and valley-type grooves are repeatedly connected to each other, and a cutting layer formed on the base layer. The cutting layer including conditioning particles deposited on surfaces of the tips and grooves. A surfaces roughness of conditioning particles deposited on the surfaces of the tips is less than a surface roughness of conditioning particles deposited on the surfaces of the grooves.04-05-2012
20090017730Polishing apparatus and polishing method - A polishing apparatus has a polishing tape (01-15-2009
20110124271CARRIER FOR DOUBLE-SIDE POLISHING APPARATUS, DOUBLE-SIDE POLISHING APPARATUS USING THE SAME, AND DOUBLE-SIDE POLISHING METHOD - A carrier for a double-side polishing apparatus, including at least: a carrier base placed between upper and lower turn tables, the carrier base having a holding hole therein, the holding hole holds the wafer sandwiched between the upper and lower turn tables. A ring-shaped resin ring disposed along an inner circumference of the holding hole, the resin ring protecting a chamfered portion by making contact with the chamfered portion of the held wafer, wherein the resin ring has a concave groove on an inner circumference thereof, upper and lower tapered surfaces are formed in the concave groove. A double-side polishing apparatus using the carrier and a double-side polishing method that can reduce the generation of taper in a polished surface and improve the flatness while suppressing the generation of an outer peripheral sag of the wafer.05-26-2011
20120231705METHOD AND APPARATUS FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A method of transporting a semiconductor wafer having a ring-shaped stiffening portion can include the steps of pressing the semiconductor wafer from the back surface side to the front surface side thereof on a place different from a place at which the semiconductor wafer is to be held, the step of pressing the semiconductor wafer being conducted before holding the semiconductor wafer having the ring-shaped stiffening portion. The method can include releasing the attachment by suction of the front surface of the semiconductor wafer by supplying a positive pressure onto the chuck table, releasing pressing the semiconductor wafer from the back surface side to the front surface side thereof on the place different from the place at which the semiconductor wafer is to be held and picking up the semiconductor wafer having the ring-shaped stiffening portion from the chuck table while holding the semiconductor wafer.09-13-2012
20120231706GRINDING MACHINE FOR OPTICAL GLASS AND ASSOCIATED METHOD OF GRINDING - This machine includes a base frame (09-13-2012
20080299874Method for restoring acid etched glass - A method for restoring acid etched glass includes grinding the glass and then applying an acid resistant polyester film over the glass. Grinding may be performed in steps going from course to fine grinding pads, and stopping with a 400 grit pad, leaving a somewhat cloudy appearing surface. The polyester film fills in small irregularities in the cloudy glass surface thus eliminating the need to polish the glass.12-04-2008
20110003536Polishing Pad and Method of Producing the Same - The present invention mainly relates to a polishing pad and method of producing the same. The polishing pad comprises a base material having a surface for polishing a substrate, wherein the surface comprises a non-woven fabric and an elastomer. The elastomer is embedded into the fabric, and the non-woven fabric comprises a plurality of first long fibers randomly entangled with each other.01-06-2011
20080293334METHODS AND APPARATUS FOR USING A BEVEL POLISHING HEAD WITH AN EFFICIENT TAPE ROUTING ARRANGEMENT - Apparatus and methods are provided to polish an edge of a substrate. The invention includes a polishing head, adapted to contact an edge of a substrate, wherein the polishing head includes one pair of front guide rollers and two pairs of back clamping rollers. Numerous other aspects are provided.11-27-2008
20110045744Polishing Pad, Use Thereof and Method for Making the Same - The present invention relates to a polishing pad that comprises a polishing sheet for polishing a substrate, a buffer sheet comprising a plurality of holes, and adhesive for adhering the buffer sheet to the polishing sheet; wherein the adhesive is formed by polymerizing macromolecules with fluidity. A method of polishing a substrate comprising using the polishing pad and a method for manufacturing the polishing pad described above are also provided.02-24-2011
20110237163SUBSTRATE POLISHING APPARATUS AND METHOD - A substrate polishing apparatus includes a substrate holding mechanism having a head for holding a substrate to be polished, and a polishing mechanism including a polishing table with a polishing pad mounted thereon. The substrate held by the head is pressed against the polishing pad on the polishing table to polish the substrate by relative movement of the substrate and the polishing pad. The substrate polishing apparatus also includes a substrate transfer mechanism for delivering the substrate to be polished to the head and receiving the polished substrate. The substrate transfer mechanism includes a substrate to-be-polished receiver for receiving the substrate to be polished, and a polished substrate receiver for receiving the substrate which has been polished.09-29-2011
20120276819Chemical Mechanical Polishing Composition and Method For Polishing Phase Change Alloys - A method for chemical mechanical polishing of a substrate comprising a germanium-antimony-tellurium chalcogenide phase change alloy (GST) using a chemical mechanical polishing composition comprising, as initial components: water; an abrasive; at least one of a phthalic acid, a phthalic anhydride, a phthalate compound and a phthalic acid derivative; a chelating agent; a poly(acrylic acid-co-maleic acid); and an oxidizing agent; wherein the chemical mechanical polishing composition facilitates a high GST removal rate with low defectivity.11-01-2012
20120100786METHOD OF MANUFACTURING GLASS SUBSTRATE FOR MAGNETIC RECORDING MEDIA - The invention provides a method of manufacturing a glass substrate for magnetic recording media. And the glass substrate has high surface smoothness and little waviness. In the primary, secondary and tertiary lapping process, diamond pads 04-26-2012
20120100785METHOD FOR CHAMFERING WAFER - In a conventional wafer chamfering process, the chamfered shape (cross-sectional shape) of the wafer circumference is uniform. However, in the chamfering step in wafer manufacture, the uniform chamfered shape varies with respective circumferential positions. Therefore, a wafer chamfering method that takes into account deformation in the chamfering step in the wafer manufacture is to be provided. The wafer chamfering method is for chamfering a wafer by bringing a grooveless grindstone into contact with the edge (circumferential end) of a wafer. By this wafer chamfering method, a movement trajectory formed by moving the wafer and the grindstone in a relative manner in the Z-axis and Y-axis directions and forming the same cross-sectional shape on the entire wafer circumference is set as a reference. So as to perform a processing operation in which the relative positions of the wafer and the grindstone are changed from positions on the reference trajectory at least in one of the Z-axis and Y-axis directions depending on wafer rotation angle positions, different cross-sectional shapes are formed depending on the wafer rotation angle positions with the use of a piezoelectric actuator.04-26-2012
20120100784Microfiber Reinforcement for Abrasive Tools - An abrasive article includes an organic bond material, an abrasive material dispersed in the organic bond material, mineral wool microfibers uniformly dispersed in the organic bond material, the mineral wool microfibers being individual filaments, one or more reinforcement and/or chopped strand fibers dispersed in the organic bond material and one or more active fillers including, for example, a manganese compound. The abrasive article can be used in the abrasive processing of a workpiece.04-26-2012
20100178849STONE WALL GRINDING AND POLISHING SYSTEM - A system, apparatus and method capable of grinding and polishing fabricated vertical surfaces of varying shapes and sizes without the use of hand tools. The system comprises a frame which can be affixed to the surface and which supports a grinding and polishing apparatus. The grinding and polishing apparatus uses air pressure to force a rotating grinding or polishing disc against the surface being worked on. The frame is designed so that the grinding and polishing apparatus can be moved (via, e.g., tracking) both vertically and horizontally to any desired point within the frame. The grinding and polishing apparatus optionally includes a water nozzle and vacuum system to spray and recapture water used to cool the surface being operated on.07-15-2010
20100190414METHOD OF PROCESSING SYNTHETIC QUARTZ GLASS SUBSTRATE FOR SEMICONDUCTOR - Disclosed is a method of processing a synthetic quartz glass substrate for a semiconductor, wherein a polishing part of a rotary small-sized processing tool is put in contact with a surface of the synthetic quartz glass substrate in a contact area of 1 to 500 mm07-29-2010
20130012107LAMINATE POLISHING PAD - An object of the invention is to provide a laminate polishing pad having a polishing layer and a cushion layer, which resist peeling. A laminate polishing pad including: a polishing layer with no region passing therethrough; an adhesive member; and a cushion layer placed on the polishing layer with the adhesive member interposed therebetween, wherein the back side of the polishing layer has at least one non-adhering region X continuously extending from a central region of the polishing layer to a peripheral end of the polishing layer, and/or the adhesive member has at least one non-adhering region Y continuously extending from a central region of the adhesive member to a peripheral end of the adhesive member.01-10-2013
20130012106POLISHING PAD - An object of the present invention is to provide a polishing pad having high planarization property and capable of making it possible to suppress the occurrence of scratches. A polishing pad of the present invention has a polishing layer having oval cells each with a long axis inclined by 5° to 45° with respect to the direction of the thickness of the polishing layer.01-10-2013
20130012105POLISHING PAD AND PRODUCTION METHOD THEREFOR, AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE - A polishing pad, having a polishing layer comprising a thermoset polyurethane foam, wherein the polishing layer has an in-plane variation of 12 or less in microrubber A hardness, the variation being obtained by measuring the polishing layer from a polishing surface side of the layer, the thermoset polyurethane foam contains, as raw material components, an isocyanate component and active-hydrogen-containing compounds, and the active-hydrogen-containing compounds comprise a trifunctional polyol having at least one terminated hydroxyl group that is a secondary hydroxyl group, and having a hydroxyl group value of 150 to 1,000 mg KOH/g in an amount of 10 to 50 parts by weight for 100 parts by weight of the active-hydrogen-containing compounds.01-10-2013
20130012104MANUFACTURING METHOD OF A GLASS SUBSTRATE FOR A MAGNETIC DISK - The present invention has an object to remove effectively metallic contaminants adhering to the glass substrate surfaces without increasing roughness of the glass substrate surfaces in the glass substrate for a magnetic disk. In a manufacturing method of a glass substrate for a magnetic disk having a cleaning step of the glass substrate, cleaning step having a treatment of contacting the glass substrate with a cleaning liquid containing oxalate and divalent iron ions and having a pH of not less than 2 and not more than 4. The divalent iron ions are added by adding ammonium iron (II) sulfate, iron (II) sulfate and iron oxalate (II) to oxalic acid.01-10-2013
20100130105Substrate supporting unit, and apparatus and method for polishing substrate using the same - Provided are a substrate supporting unit and an apparatus and method for polishing a substrate using the same. The substrate supporting unit vacuum-absorbs a bottom surface of the substrate during a polishing process, and supports the substrate in a state where the substrate is upwardly spaced from the substrate supporting unit to clean the substrate during a post-cleaning process. Therefore, in the substrate supporting unit and the apparatus and method for polishing the substrate using the same, a polishing process on a top surface of the substrate and a post-cleaning process on the top and bottom surfaces of the substrate may be sequentially performed in a state where the substrate is supported by a single wafer type substrate supporting unit.05-27-2010
20130023188Apparatus for Wafer Grinding - A grinding wheel comprises an outer base with a first attached grain pad; and an inner frame with a second attached grain pad; and a spindle axis shared by the outer base and the inner frame, wherein at least one of the outer base and the inner frame can move independently along the shared spindle axis; and wherein the outer base, the inner frame, and the shared spindle axis all have a same center. A grinding system comprises an above said grinding wheel, and a wheel head attached to the shared spindle axis, capable of moving vertically, in addition to a motor driving the grinding wheel to spin; and a chuck table for fixing a wafer on top of the chuck table; wherein the grinding wheel overlaps a portion of the chuck table, each capable of spinning to the opposite direction of another.01-24-2013
20080233839Polisher for chemical mechanical planarization - Embodiments of a polisher for chemical mechanical planarization. The polisher includes a polishing pad structure containing a first reactant therein, and a second reactant in a polishing environment over the polishing pad structure. The first reactant and the second reactant react endothermically upon contact when polishing a wafer surface between the polishing pad structure and the polishing environment.09-25-2008
20120252323CUTTING METHOD OF HONEYCOMB DRIED BODY AND HONEYCOMB DRIED BODY CUTTING DEVICE - There is disclosed cutting means of a honeycomb dried body in which cracks are not easily generated in the honeycomb dried body, even when a grindstone continues to be used for a long period of time, a cutting speed is raised and a cutting object is a honeycomb dried body having a large diameter. There is provided a cutting method of a honeycomb dried body to cut the honeycomb dried body while applying a force Pm which resists a thrust force Pt required for the cutting and a weight Pw of a cutoff section, to a portion which becomes the cutoff section,10-04-2012
20110269380Base layer, polishing pad including the same and polishing method - A polishing pad including a polishing layer and a base layer is provided. Disposed under the polishing layer, the base layer includes a porous inner layer and at least one surface layer. The porous inner layer has an upper surface and a lower surface. The surface layer is disposed on at least one of the upper surface and the lower surface of the porous inner layer. The surface layer has a pore ratio no larger than 0.3%, or is completely non-porous.11-03-2011
20130115860Linear, automated apparatus and method for clean, high purity, simultaneous lapping and polishing of optics, semiconductors and optoelectronic materials - A linear, automated apparatus and method for clean, cost-effective, simultaneous lapping and polishing of optics, semiconductors and optoelectronic materials is presented, constructed principally from corrosion resistant stainless steel or nickel, enabling utilization of high purity water based abrasive slurry. The circular stainless steel or nickel lapping plate of the apparatus supports a synthetic nylon or rayon pad, whereby material is abraded from the workpiece primarily through the reciprocal, back and forth, linear movement of the workpiece holder, diametrically across the circular lapping plate, with intermittent rotation in step increments of the workpiece holder and affixed workpiece, tracing arcs of 180 degrees, first in a clockwise and subsequently counterclockwise direction. Intermittent rotation of the circular lapping plate for the sole purpose of ensuring uniform wear on the circular nylon or rayon pad and lapping plate, eliminates the need for periodic, time consuming conditioning or reflattening of the lapping plate.05-09-2013
20130102230Method of Manufacturing Glass Substrate for Information Recording Medium, and Suction Instrument - An object of the invention is to provide a method of manufacturing a glass substrate for an information recording medium, which suppresses an increase in the number of foreign matter adhering to the surface of the glass substrate or damages on the surface of the glass substrate in suckingly holding the glass substrate by a suctorial holding portion, and to provide a suction instrument which makes it easy to dismount a glass substrate from a polishing pad of a polishing device. A suction instrument 04-25-2013
20130102229Process for Producing Glass Substrate for Information Recording Medium - According to the process for producing a glass substrate for an information-recording medium of the present invention, a glass plate 04-25-2013
20130102228GLASS PLATE, GLASS PLATE POLISHING METHOD, METHOD OF PRODUCING THE SAME, AND APPARATUS FOR PRODUCING THE SAME - A disclosed glass plate is formed by converging flow streams of molten glass, which have a same composition and are caused to flow downward along left and right surfaces respectively of a forming body, in a vicinity of a root of the forming body, wherein neither front nor back surface of the glass plate is polished, wherein a convergent plane between the flow streams deviates to one side from a center plane lying at a center between the front surface of the glass plate and the back surface of the glass plate.04-25-2013
20080200099METHOD FOR MONITORING EDGE EXCLUSION DURING CHEMICAL MECHANICAL PLANARIZATION - A method is provided for measuring edge exclusion on a workpiece that includes a wafer having a film disposed thereon. The method is performed by a CMP system employing a platen and a thickness sensor coupled to the platen and positioned to repeatedly travel a path over the edge of the film during polishing. The method comprises measuring the thickness of the workpiece during selected iterations of the probe path, and establishing from the wafer thickness measurements the length of time the probe is over the film (t08-21-2008
20090311947Polishing Composition for Silicon Wafer and Polishing Method of Silicon Wafer - The present invention provides a polishing composition used in a polishing process of a silicon wafer, which has an improved smoothness and is environment-friendly. The polishing composition for the silicon wafer of the present invention comprises a metal oxide, an alkaline substance and water, wherein the alkaline substance is guanidines. Another polishing composition for a silicon wafer of the present invention comprises an alkaline substance and water, wherein the alkaline substance is guanidines. These polishing compositions may further comprise a chelating agent. The metal oxide is preferably a cerium oxide or a silicon oxide. The present invention encompasses a polishing method using the above polishing composition and a kit for the above polishing composition.12-17-2009
20120276820Method for Adjusting Metal Polishing Rate and Reducing Defects Arisen in a Polishing Process - The invention discloses a method for adjusting metal polishing rate and reducing defects arisen in a polishing process, in which a electric conduction system is additionally provided to a polishing apparatus to electrify the polishing fluid; in the polishing process, the polishing fluid flows through the polishing pad and the wafer to be polished, such that the polished metal surface of the wafer is electrically charged so as to control the oxidation of the polished metal surface of the wafer. The invention has solved the problem that the dishing and erosion defects are prone to be formed in the existing polishing process, the potential of the polishing fluid is changed by means of the additional electric conduction system and thus the polishing rate of the polished metal is controlled so as to reduce the dishing and erosion defects occurred in the polishing process.11-01-2012
20110275286Method and System for Polishing Materials Using a Nonaqueous Magnetorheological Fluid - A nonaqueous magnetorheological fluid includes a primarily organic carrier liquid and magnetizable particles. The magnetorheological fluid also includes a buffer, a stabilizer, and water. A pH of the magnetorheological fluid is between 6.5 and 9.0.11-10-2011
20130137344ABRASIVE FILAMENTS WITH IMPROVED STIFFNESS AND INDUSTRIAL BRUSHES COMPRISING THE SAME AND USES THEREOF - Disclosed herein are abrasive filaments with improved stiffness and industrial brushes comprising the same, wherein the abrasive filaments are formed of polyamide compositions comprising, (a) at least one polyamide; (b) about 0.1-1 wt % of at least one linear chain extending compound that has a molecular weight of 1000 Daltons or lower; (c) about 0.1-1 wt % of at least one antioxidant; and (d) about 10-40 wt % of abrasive particles, with the total wt % of all components in the composition totaling to 100 wt %.05-30-2013
20100317263POLISHING PAD - A method for manufacturing a polishing pad that has high level of optical detection accuracy and is prevented from causing slurry leak from between the polishing region and the light-transmitting region includes preparing a cell-dispersed urethane composition by a mechanical foaming method; placing a light-transmitting region at a predetermined position on a face material or a belt conveyor, continuously discharging the cell-dispersed urethane composition onto part of the face material or the belt conveyor where the light-transmitting region is not placed; placing another face material or belt conveyor on the discharged cell-dispersed urethane composition; curing the cell-dispersed urethane composition to form a polishing region including a polyurethane foam, so that a polishing sheet is prepared; applying a coating composition containing an aliphatic and/or alicyclic polyisocyanate to one side of the polishing sheet and curing the coating composition to form water-impermeable film; and cutting the polishing sheet.12-16-2010
20100317262ABRASIVE ARTICLE WITH UNIFORM HEIGHT ABRASIVE PARTICLES - A method of making an abrasive article including the step of preparing a master plate with a surface having a shape. Depositing a spacer layer on the surface of the master plate. A slurry containing an adhesive and abrasive particles is deposited on a surface of the spacer layer. A substrate embedded with abrasive particles having a surface generally complementary to the surface of the master plate is fabricated. A spacer layer is formed by various method controlled the height of the protruded abrasive particles. The master plate and the spacer layer are separated from the substrate to expose abrasive particle protruding a substantially uniform height. An abrasive article made according to this method is also disclosed.12-16-2010
20100317261Chemical mechanical polishing pad having a low defect integral window - A chemical mechanical polishing pad having a polishing layer with an integral window and a polishing surface adapted for polishing a substrate selected from a magnetic substrate, an optical substrate and a semiconductor substrate, wherein the formulation of the integral window provides improved defectivity performance during polishing. Also provided is a method of polishing a substrate using the chemical mechanical polishing pad.12-16-2010
20130157543Polishing Pad and Method For Polishing A Semiconductor Wafer - A semiconductor wafer is polished, wherein in a first step, the rear side of the wafer is polished by a polishing pad comprising fixedly bonded abrasives having a grain size of 0.1-1.0 μm, while supplying a polishing agent free of solid materials having a pH of at least 11.8, and, in a second step, the front side of the semiconductor wafer is polished, wherein a polishing agent having a pH of less than 11.8 is supplied. A polishing pad for use in apparatuses for polishing semiconductor wafers, has a layer containing abrasives, a layer composed of a stiff plastic and also a compliant, non-woven layer, wherein the layers are bonded to one another by means of pressure-sensitive adhesive layers.06-20-2013
20120021677METHOD OF MANUFACTURING GLASS SUBSTRATE FOR MAGNETIC DISK, METHOD OF MANUFACTURING MAGNETIC DISK, AND POLISHING APPARATUS OF GLASS SUBSTRATE FOR MAGNETIC DISK - A method of manufacturing a glass substrate for a magnetic disk having polishing accuracy on an inner circumferential end face of the substrate, and reduced thermal asperities. An inner circumferential end face of a cylindrical polishing object 01-26-2012
20120028547SEMICONDUCTOR WAFER POLISHING METHOD AND POLISHING PAD SHAPING JIG - Disclosed is a semiconductor wafer polishing method for polishing the surfaces to be polished of semiconductor wafers by use of polishing pads (02-02-2012
20090298391METHOD OF POLISHING END FACE OF MULTI-FIBER OPTICAL CONNECTOR - To provide a method of polishing an end face of a multi-fiber optical connector capable of eliminating recesses produced in core parts of multi-mode optical fibers.12-03-2009
20130203324MANUFACTURE OF SYNTHETIC QUARTZ GLASS SUBSTRATE - A rough surface of a starting synthetic quartz glass substrate is polished to a mirror finish, using a polishing slurry containing tetragonal or cubic zirconia.08-08-2013
20130210321MODULAR GRINDING APPARATUSES AND METHODS FOR WAFER THINNING - Methods of thinning a plurality of semiconductor wafers and apparatuses for carrying out the same are disclosed. A grinding module within a set of grinding modules receives and grinds a semiconductor wafer. A polishing module receives the semiconductor wafer from the grinding module and polishes the wafer. The polishing module is configured to polish the semiconductor wafer in less time than the grinding module is configured to grind the corresponding wafer.08-15-2013

Patent applications in class Glass or stone abrading

Patent applications in all subclasses Glass or stone abrading