Entries |
Document | Title | Date |
20080200097 | POLISHING METHOD AND POLISHING APPARATUS - The polishing method of a disk-shaped substrate for polishing an outer circumference | 08-21-2008 |
20080214092 | METHOD AND APPARATUS FOR MEASUREMENT OF MAGNETIC PERMEABILITY OF A MATERIAL - A system for determining the magnetic permeability of a material is provided. Two electrical inductors formed as primary and secondary concentric coils share a common magnetic core space. An AC voltage applied to the primary coil creates a magnetic flux in the core proportional to the magnetic permeability of a sample of the material positioned within the core space. The magnetic flux induces an AC voltage in the secondary coil indicative of the sample magnetic permeability. When the material is a magnetorheological fluid, the magnetic permeability is proportional to the concentration of magnetic particles in the sample and can be back-calculated from the amplitude of the secondary voltage signal. Sensitivity and resolution can be increased by using two identical sets of coils wherein a reference material forms a core for the primary set and the MR fluid sample forms a core for the secondary set. | 09-04-2008 |
20080214093 | CMP polishing slurry and polishing method - The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and α-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films. | 09-04-2008 |
20080220698 | SYSTEMS AND METHODS FOR EFFICIENT SLURRY APPLICATION FOR CHEMICAL MECHANICAL POLISHING - An embodiment relates generally to a chemical mechanical polishing apparatus. The apparatus includes a platen adapted to receive a wafer to be chemical-mechanically polished and a polishing pad configured to polish the wafer. The apparatus also includes a slurry feed line configured to provide slurry to the polishing pad and at least one slurry dispensing outlet coupled to the slurry feed line and configured to dispense slurry as a mist of small droplets ranging from submicron to about 500 microns. | 09-11-2008 |
20080227369 | Apparatus and Method for Confined Area Planarization - A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte solution. A cation exchange membrane is disposed over a lower opening of the chamber. A top surface of the cation exchange membrane is in direct exposure to the electrolyte solution to be maintained within the chamber. A fluid supply channel is defined to expel fluid at a location adjacent to a lower surface of the cation exchange membrane. A vacuum channel is defined to provide suction at a location adjacent to the lower surface of the cation exchange membrane, such that the fluid to be expelled from the fluid supply channel is made to flow over the lower surface of the cation exchange membrane. | 09-18-2008 |
20080233836 | POLISHING COMPOSITION AND POLISHING METHOD - A polishing composition includes more than 0.1% by mass of colloidal silica, and water, and has a pH of 6 or less. The polishing composition has the ability to polish a titanium material at a high stock removal rate. Thus, the polishing composition is suitable for use in applications for polishing a titanium-containing object. | 09-25-2008 |
20080248726 | Polishing Method and Polishing Film Used in Such Polishing Method - Disclosed is a polishing method which is effective to prevent lowering of the polishing efficiency in the later stage of polishing. The polishing method is characterized in that polishing is performed while so adjusting a polishing liquid as to have a pH of not less than 2 and less than 7. | 10-09-2008 |
20080248727 | Polishing Slurry - The present invention provides a polishing slurry which remarkably inhibits the occurrence of scratch, dishing or erosion. According to the present invention, provided is a polishing slurry comprising organic particles (A), an oxidizing agent and a complexing agent, wherein said organic particles (A) are those obtained by coating a part of the surface of an organic particle (B) having functional groups capable of reacting with a metal to be polished on the surface with a resin (C) free from functional groups capable of reacting with a metal to be polished, and the organic particle (B) is preferably one containing a copolymer obtained by polymerization of a monomer composition comprising 1 to 50 weight % of one, two or more monomers selected from a monomer having a carboxyl group, a monomer having a hydroxyl group, a monomer having an amino group, a monomer having an acetoacetoxy group and a monomer having a glycidyl group, and 99 to 50 weight % of other monomers, with each percentage based on the total weight of the monomers. | 10-09-2008 |
20080248728 | Method for manufacturing polishing pad, polishing pad, and method for polishing wafer - There is disclosed a method for manufacturing a polishing pad that is formed of a urethane foam pad and attached to a turn table to polish a wafer, the method comprising at least steps of: slicing a urethane foam cake to provide the urethane foam pad; and performing press processing with respect to the urethane foam pad with a pressure of 15000 g/cm | 10-09-2008 |
20080254717 | Cmp Polishing Slurry and Method of Polishing Substrate - A CMP polishing slurry of the present invention contains cerium oxide particles, water, and a polymer of at least one of a methacrylic acid and the salt thereof, and/or a polymer of at least one of a methacrylic acid and the salt thereof and a monomer having an unsaturated double bond, preferably contains furthermore a dispersant or a polymer of monomers containing at least one of an acrylic acid and the salt thereof. The present invention provides a CMP polishing slurry and a polishing method that, after polishing, give a polished film having a smaller difference in residual film thickness due to a pattern density difference. | 10-16-2008 |
20080254718 | Production Method of Polishing Composition - [Problems to Be Solved] To provide a method for obtaining a polishing composition by which a polishing speed is high and the polished surface has little surface failure. | 10-16-2008 |
20080268753 | NON-CONTACT WET WAFER HOLDER - The present invention relates to a load cup configured to speed up substrate transferring to and from a carrier head and to reduce corrosion during the transferring. One embodiment of the present invention provides a non-contact substrate holder comprising a pedestal having a top surface configured to support a substrate, and at least one injection port configured to eject a high velocity liquid stream on the top surface of the pedestal, wherein the liquid stream in configured to secure the substrate on the pedestal without the substrate contacting the top surface of the pedestal. | 10-30-2008 |
20080280537 | SWEETENING AND CLEANING SYSTEM FOR LAPPING MACHINES - A sweetening and cleaning system that is used with one or more lapping machines to sweeten a lapping compound in a sweetening mode, and to clean parts of the system itself and parts of the one or more lapping machines with a cleaning compound in a cleaning mode. The system includes a virgin receptacle for holding the lapping compound, a cleaning receptacle for holding the cleaning compound, a waste receptacle for holding waste, and at least one pump. | 11-13-2008 |
20080280538 | Polishing composition - The present invention provides a polishing composition containing an organic nitrogen-containing compound, an organic polybasic acid, an abrasive, and water, wherein the organic nitrogen-containing compound has in the molecule two or more amino groups, two or more imino groups, or one or more amino groups and one or more imino groups; a method for manufacturing a substrate with the polishing composition; and a method for reducing surface stains of a substrate with the polishing composition. The polishing composition can be suitably used, for example, in the manufacturing step for a substrate for a hard disk such as a memory hard disk. | 11-13-2008 |
20080287038 | Polishing composition for semiconductor wafer, method for production thereof and polishing method - The present invention relates to a polishing composition for a substrate including a metal such as wiring, etc., formed on a semiconductor wafer, which can provide a high polishing rate without causing scratches on the wiring metal, a method of producing the polishing composition, and a polishing method. The polishing composition for a semiconductor wafer comprises an acid and an aqueous medium dispersion containing positively-charged silica particles having an amino group-containing silane coupling agent bonded on a surface thereof, the polishing composition having a pH of 2 to 6. | 11-20-2008 |
20080305718 | Polishing Composition and Polishing Method - A first polishing composition includes abrasive grains and an iodine compound and has a pH of 6 or more. The first polishing composition can suitably polish the Si [0001] plane of a single crystal silicon carbide substrate. A second polishing composition includes an iodine compound and has a pH of 8 or less. The second polishing composition can suitably polish the C [000-1] plane of a single crystal silicon carbide substrate. A third polishing composition includes abrasive grains and an iodine compound and has a pH of 6 to 8, inclusive. The third polishing composition can suitably polish each of the Si [0001] and C [000-1] planes of a single crystal silicon carbide substrate. | 12-11-2008 |
20080311825 | Incorporation of Particulate Additives Into Metal Working Surfaces - A mechanical device and method for lapping a metal working surface, the device including: (a) a workpiece having the metal working surface; (b) a contact surface, disposed generally opposite the working surface, for moving in a relative motion to the working surface; (c) a plurality of abrasive particles, disposed between the contact surface and the working surface, and (d) a mechanism, associated with at least one of the surfaces, for applying the relative motion, and for exerting a load on the contact surface and the working surface, the contact surface for providing an at least partially elastic interaction with the abrasive particles, wherein, associated with the contact surface is a particulate additive material, and wherein, upon activation of the mechanism, the relative motion under the load causes a portion of the abrasive particles to lap the working surface, and wherein the relative motion under the load effects incorporation of a portion of the particulate additive material into the working surface. | 12-18-2008 |
20080318493 | Method of Manufacturing Polishing Carrier and Silicon Substrate for Magnetic Recording Medium, and Silicon Substrate for Magnetic Recording Medium - An object is to provide a polishing carrier that can prevent scratches from occurring on the edge face of a substrate, and prevent debris from being produced from the edge face, while a single crystal silicon substrate, which is fragile, and has a high cleavage strength, is polished, and to make it difficult for debris to be produced due to rubbing against a cassette when it is stored in a cassette in subsequent processing, and prevent the substrate from being broken. Therefore a part of the internal circumference of a substrate holding hole in a polishing carrier, that makes contact with the silicon substrate is formed from a cushion whose hardness is less than that of the silicon substrate. For the cushion, any type selected from for example suede, polyamide resin, polypropylene resin, or epoxy resin may be used. Especially, the use of epoxy resin is desirable. | 12-25-2008 |
20090011681 | METHOD OF PRODUCING A GLASS SUBSTRATE FOR A MASK BLANK, METHOD OF PRODUCING A MASK BLANK, AND METHOD OF PRODUCING A TRANSFER MASK - In a method of producing a glass substrate for a mask blank, a surface of the glass substrate is polished by the use of a polishing liquid having a pH value between 7.0 and 7.6 that contains abrasive grains, and the abrasive grains include colloidal silica abrasive grains produced by hydrolysis of an organosilicon compound. The polishing process includes a surface roughness control step for initially finishing the surface of the glass substrate to a predetermined surface roughness by moving a polishing member and the glass substrate relative to each other under a predetermined pressure. This is followed by a protrusion suppressing step, carried out immediately before the end of the polishing process, under a pressure lower than the predetermined pressure, to minimize polishing rate and suppress occurrence of a fine convex protrusion. A mask blank and then a transfer mask are formed from this polished glass substrate. | 01-08-2009 |
20090017729 | POLISHING PAD AND METHODS OF IMPROVING PAD REMOVAL RATES AND PLANARIZATION - A method of improving a removal rate of a pad includes producing a body of a pad of polyurethane from a mix; and introducing into the mix an additive which decreases an elastic rebound of the pad so as to increase a chemical-mechanical planarization removal rate; and using as the additive a substance which at least contains starch. In another embodiment, in a CMP process that includes removing a barrier and buffing a polyurethane after a bulk copper removal process, a polishing pad is used having a shore D hardness less than 35% and having at least one layer made from a mix composed of at least one of a prepolymer with an isocyanate concentration of between 6.5% and 11.0% to achieve a molal concentration, and a monomer in combination with an addition of isocyanate to achieve the substantially same molal concentration. | 01-15-2009 |
20090023362 | RETAINING RING FOR CHEMICAL MECHANICAL POLISHING, ITS OPERATIONAL METHOD AND APPLICATION SYSTEM - A retaining ring for CMP is disclosed. The retaining ring has a plurality of grooves. The grooves have rounded sidewalls. Because the sidewalls of the grooves of the retaining ring are rounded, the slurry is not apt to accumulate around them and the pad is less scratched. Accordingly, the micro-scratches on the wafer surface are reduced and the yield of the CMP step is increased. Its operational method and application system are also disclosed in this invention. | 01-22-2009 |
20090023363 | PROCESS OF USING A POLISHING APPARATUS INCLUDING A PLATEN WINDOW AND A POLISHING PAD - A polishing pad can include a first layer and a second layer. The first layer can have a first polishing surface and a first opening. The second layer can have an attaching surface and a second opening substantially contiguous with the first opening. The polishing pad can further include, a pad window lying within the first opening. The pad window can include a second polishing surface. When the pad would be attached to a platen, the first and second polishing surfaces can lie along a same plane, and an opposing surface of the pad window can abut an exterior surface of a platen window. In another aspect, a polishing apparatus can include an exterior surface of a platen window abutting the polishing pad. In still another aspect, a process of polishing can include polishing a workpiece such that the pad window contacts the workpiece and the platen window simultaneously. | 01-22-2009 |
20090036031 | Coating assisted surface finishing process - A method of polishing a first component by a second component of a tribological pair is disclosed. The method includes mating the first component to the second component in a tribological configuration. The first component and the second component are moved such that a first surface of the first component and a second surface of the second component contact and slide against each other, so that the second component polishes the first component. The method further includes discontinuing moving of the first component and the second component when the first surface obtains a desired surface finish. | 02-05-2009 |
20090042485 | Polishing composition - A polishing composition containing a silica, an acid, a surfactant, and water, wherein (a) the acid has solubility in water at 25° C. of 1 g or more per 100 g of an aqueous saturated solution; (b) the surfactant is a sulfonic acid represented by the formula (1) or (2), or a salt thereof; and (c) the polishing composition has a pH of a specified range; and a polishing process of a substrate using the polishing composition are provided. The polishing composition is suitably used, for example in polishing a substrate for disk recording media such as magnetic disks, optical disks and opto-magnetic disks. | 02-12-2009 |
20090047870 | Reverse Shallow Trench Isolation Process - A method of polishing a substrate surface containing silicon nitride and silicon oxide or silicon dioxide, comprising movably contacting the surface with a polishing pad and having a polishing composition disposed between the polishing pad and the surface, said polishing composition comprising 1) hydrous ceria abrasive; 2) polyvinylpyridine, vinyl pyridine copolymers, or both, and 3) water, wherein at 2 psi downpressure the silicon nitride removal rate is at least 500 angstroms per minute and the selectivity of silicon nitride to silicon oxide is at least 30. | 02-19-2009 |
20090053976 | Customized Polishing Pads for CMP and Methods of Fabrication and Use Thereof - The present application relates to polishing pads for chemical mechanical planarization (CMP) of substrates, and methods of fabrication and use thereof. The pads described in this invention are customized to polishing specifications where specifications include (but not limited to) to the material being polished, chip design and architecture, chip density and pattern density, equipment platform and type of slurry used. These pads can be designed with a specialized polymeric nano-structure with a long or short range order which allows for molecular level tuning achieving superior thermo-mechanical characteristics. More particularly, the pads can be designed and fabricated so that there is both uniform and nonuniform spatial distribution of chemical and physical properties within the pads. In addition, these pads can be designed to tune the coefficient of friction by surface engineering, through the addition of solid lubricants, and creating low shear integral pads having multiple layers of polymeric material which form an interface parallel to the polishing surface. The pads can also have controlled porosity, embedded abrasive, novel grooves on the polishing surface, for slurry transport, which are produced in situ, and a transparent region for endpoint detection. | 02-26-2009 |
20090081927 | POLISHING COMPOSITION AND METHOD UTILIZING ABRASIVE PARTICLES TREATED WITH AN AMINOSILANE - The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound. | 03-26-2009 |
20090098806 | Compositions And Methods For Removing Scratches From Plastic Surfaces - A composition including an abrasive, a suspension agent, a surfactant, and a lubricant, is provided for removing scratches, hazing, discoloration, and other defects from plastic surfaces. The composition is applied to a surface and used to polish the surface. The defects within the surface are removed without the removal of significant amounts of the material. Accordingly, the present invention removes defects from surfaces without creating optical distortion. | 04-16-2009 |
20090098807 | Composite slurries of nano silicon carbide and alumina - Improved slurry compositions comprising silicon carbide particles and alumina particles dispersed within an aqueous medium. Slurry compositions in the form of abrasive slurry compositions for use chemical mechanical planarization (CMP) processes, particularly abrasive slurry compositions for polishing of sapphire, and methods of use. | 04-16-2009 |
20090104850 | POLISHING PAD - An object of the present invention is to provide a polishing pad excellent in polishing rate and superior in longevity without generating center slow. Another object of the present invention is to provide a method of manufacturing a semiconductor device with the polishing pad. Disclosed is a polishing pad having a polishing layer consisting of a polyurethane foam having fine cells, wherein a high-molecular-weight polyol component that is a starting component of the polyurethane foam contains a hydrophobic high-molecular-weight polyol A having a number-average molecular weight of 550 to 800 and a hydrophobic high-molecular-weight polyol B having a number-average molecular weight of 950 to 1300 in an A/B ratio of from 10/90 to 50/50 by weight. | 04-23-2009 |
20090104851 | Polishing of sapphire with composite slurries - Improved slurry compositions comprising a mixture of a first type of particles and a second type of abrasive particles dispersed within an aqueous medium, and abrasive slurry compositions for use chemical mechanical planarization (CMP) processes, particularly abrasive slurry compositions for polishing of sapphire. These abrasive slurry compositions comprise a mixture of a first type of abrasive particles having a hardness that is harder than the surface being polished and a second type of abrasive particles have a hardness that is softer than the surface being polished, particularly mixtures of silicon carbide abrasive particles and silica abrasive particles, dispersed within an aqueous medium. | 04-23-2009 |
20090111359 | POLISHING COMPOSITION FOR HARD DISK SUBSTRATE - A polishing composition for a hard disk substrate includes alumina particles, silica particles, and water. The volume median diameter of secondary particles of the alumina particles measured by a laser beam diffraction method is 0.1 to 0.8 μm. The volume median diameter of primary particles of the silica particles measured by transmission electron microscope observation is 40 to 150 nm. The standard deviation in number-basis particle size of the primary particles of the silica particles measured by the transmission electron microscope observation is 11 to 35 nm. The polishing composition for a hard disk substrate can preferably reduce the embedding of alumina abrasive grains into the substrate without impairing the productivity. | 04-30-2009 |
20090117829 | Polishing slurry for metal, and polishing method - A polishing slurry for metal comprises an oxidizer, a metal oxide dissolving agent, a metal inhibitor, and water, wherein the metal inhibitor is at least one of a compound having an amino-triazole skeleton and a compound having an imidazole skeleton. The use of the polishing slurry for metal makes it possible to raise the polishing speed sufficiently while keeping the etching speed low, restrain the generation of corrosion of the surface of a metal and dishing, and form a metal-film-buried pattern having a high reliability in the process of formation of wiring of semiconductor devices. | 05-07-2009 |
20090124172 | AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING, CHEMICAL MECHANICAL POLISHING METHOD, KIT FOR CHEMICAL MECHANICAL POLISHING, AND KIT FOR PREPARING AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING - A chemical mechanical polishing aqueous dispersion comprises (A) abrasive grains, (B) at least one of quinolinecarboxylic acid and pyridinecarboxylic acid, (C) an organic acid other than quinolinecarboxylic acid and pyridinecarboxylic acid, (D) an oxidizing agent, and (E) a nonionic surfactant having a triple bond, the mass ratio (WB/WC) of the amount (WB) of the component (B) to the amount (WC) of the component (C) being 0.01 or more and less than 2, and the component (E) being shown by the following general formula (1), | 05-14-2009 |
20090130957 | SYSTEM, METHOD AND APPARATUS FOR LAPPING WORKPIECES WITH SOLUBLE ABRASIVES - A soluble abrasive is used to lap workpieces to overcome the problem of embedding and retaining abrasive particles in the workpieces. The soluble abrasives are dissolved from the workpiece even if they become embedded in the workpiece. For example, the abrasives may be dissolved with water and comprise ionic salts. The soluble abrasive has a hardness that is equal to or slightly greater than the hardness of the metal being lapped. | 05-21-2009 |
20090130958 | Fixed Abrasive Pad Having Different Real Contact Areas and Fabrication Method Thereof - Disclosed is a method for fabricating a fixed abrasive pad in use of a chemical mechanical polishing process. The method includes: forming one or more etching molds providing a plurality of different real contact areas; attaching the etching mold(s) to a roller or press; and forming a fixed abrasive pad using the roller or press, The fixed abrasive pad has a plurality of polishing portions, each having a different real contact area. Especially, the fixed abrasive pad can comprise a low-density polishing portion having a real contact area less than 20% and a high-density polishing portion having a real contact area of 20%˜50%. | 05-21-2009 |
20090137191 | COPPER CMP POLISHING PAD CLEANING COMPOSITION COMPRISING OF AMIDOXIME COMPOUNDS - The present invention relates to methods of using amidoxime compositions for cleaning polishing pads, particularly after chemical mechanical planarization or polishing is provided. A polishing pad is cleaned of Cu CMP by-products, subsequent to or during planarizing a wafer, to reduce pad-glazing by applying to the polishing pad surface a composition comprising an aqueous amidoxime compound solution in water. | 05-28-2009 |
20090163116 | CD repair apparatus - An apparatus for the repair and resurfacing of compact discs using a motorized, abrasive surface. | 06-25-2009 |
20090186560 | WAFER DE-CHUCKING - A carrier head ( | 07-23-2009 |
20090191792 | METHOD FOR CORROSION PREVENTION DURING PLANARIZATION - The present invention relates to the reduction or complete prevention of Cu corrosion during a planarization or polishing process. In one aspect of the invention, RF signal is used to establish a negative bias in front of the wafer surface following polishing to eliminate Cu | 07-30-2009 |
20090197510 | Polishing method and apparatus - This polishing method and polishing apparatus include: a polishing characteristics measurement step in which electrochemical characteristics of a slurry in relation to a material to be polished are measured; and a preparation step in which the slurry is prepared based on the measured electrochemical characteristics, wherein, in the polishing characteristics measurement step, a slurry is supplied from a slurry supply apparatus | 08-06-2009 |
20090221213 | AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING AND CHEMICAL MECHANICAL POLISHING METHOD FOR SEMICONDUCTOR DEVICE - A chemical mechanical polishing aqueous dispersion of the invention includes (A) a first water-soluble polymer having a weight average molecular weight of 500,000 to 2,000,000 and including a heterocyclic ring in its molecule, (B) a second water-soluble polymer or its salt having a weight average molecular weight of 1000 to 10,000 and including one group selected from a carboxyl group and a sulfonic group, (C) an oxidizing agent, and (D) abrasive grains, and has a pH of 7 to 12. | 09-03-2009 |
20090275266 | OPTICAL DEVICE POLISHING - Embodiments described herein provide methods for manufacturing an optical device having shaped sidewalls. A substrate material can be shaped to form a substrate portion of an optical device comprising an exit face and sidewalls positioned and shaped to reflect light to the exit face to allow light to escape the exit face. The sidewalls can be polished to a desired degree of polish. Polishing can be done using a polishing tool, etching, particle jet polishing or other polishing method. | 11-05-2009 |
20090298389 | SURFACE TREATING METHOD AND APPARATUS - A surface treating apparatus treats a substrate surface by rotating a cylindrical polishing member in a state where the polishing member makes contact with the substrate surface. A polishing liquid is supplied to a polishing liquid passage that is provided in a central portion of the polishing member, and the polishing liquid is supplied to the substrate surface by rotating the polishing member while filtering the polishing liquid by a foam member provided on an outer periphery of the polishing liquid passage. Aperture diameters of the foam member are larger on the side of the polishing liquid passage than on the outside of the polishing member. | 12-03-2009 |
20090298390 | Surface treated implantable articles and related methods - Surface treated implantable articles and related methods are disclosed. The surface treated implantable articles can be substantially flash-free, include one or more rounded edges, or include an enhanced optical clarity, one or all of which can be produced by polishing. The polishing can include causing the implantable articles to be repeatedly impacted with polishing media when the articles are swelled to an enlarged state. The polishing process can be particularly useful for smoothing lacrimal implants insertable in a lacrimal canaliculus. | 12-03-2009 |
20090305613 | Single Type Substrate Treating Apparatus and Method - Provided are a single type substrate treating apparatus and method. A polishing unit is disposed in a process chamber for polishing a substrate chemically and mechanically, and a cleaning unit is disposed in the same process chamber for cleaning the substrate. Therefore, according to the single substrate treating apparatus and method, a polishing process and a cleaning process can be performed on a substrate in the same process chamber by a single substrate treating method in which substrates are treated one by one. | 12-10-2009 |
20090318064 | VENTED CUTTING HEAD BODY FOR ABRASIVE JET SYSTEM - An abrasive waterjet assembly has a cutting head assembly with a venting system for controlling the flow of abrasive within a cutting head body. The venting system includes one or more vents for regulating the pressure within a cutting head body to minimize, limit, or substantially eliminate any abrasive from reaching a jewel orifice. The vents include venting ports positioned between an orifice mount that retains the jewel orifice and a mixing region in which abrasive is mixed with a fluid jet produced by the jewel orifice. An isolator retained in the cutting head body further inhibits the upstream flow of abrasive, if any. | 12-24-2009 |
20100009601 | POLISHING PAD, POLISHING METHOD AND METHOD OF FORMING POLISHING PAD - A polishing pad, a polishing method and a method of forming a polishing pad are provided. The polishing pad includes a polishing layer and a plurality of arc grooves. The arc grooves are disposed in the polishing layer. Each of the arc grooves has two ends, and at least one end thereof has an inclined wall. The angle between the inclined wall of each groove and the surface plane of the polishing layer is less than 90 degree. | 01-14-2010 |
20100015891 | Method of Descaling Metal Wire Rod and Apparatus Therefor - An apparatus for removing scales from metal wires including: a liquid container tank | 01-21-2010 |
20100015892 | METHOD AND APPARATUS FOR PREPPING SURFACES WITH A HIGH-FREQUENCY FORCED PULSED WATERJET - A method of prepping a surface using a high-frequency forced pulsed waterjet entails generating a high-frequency signal having a frequency f using a high-frequency signal generator, applying the high-frequency signal to a transducer having a microtip to cause the microtip of the transducer to vibrate to thereby generate a forced pulsed waterjet through an exit orifice of a nozzle having an exit orifice diameter d and a length L. The forced pulsed waterjet prepares the surface to within a predetermined range of surface roughness. The surface roughness is determined by selecting operating parameters comprising a standoff distance (SD), a traverse velocity V | 01-21-2010 |
20100136887 | Apparatus and method for polishing via driving abrasive grains mechanically and magnetically - Disclosed is a polishing apparatus including a shell, a magnetic controller, an axle, a pusher, a ring, posts, and a stirring element. The shell includes a roof, a floor and a wall between the roof and the floor. Abrasive solution is filled in the shell. The abrasive solution includes abrasive grains and magnetic material. The magnetic controller is located around the wall. The axle can be engaged with a rotary element of a machine. The pusher is connected to the axle and inserted through the roof. A ring is located between the pusher and the wall. Posts are located between the ring and the floor. The stirring element is located on the floor. | 06-03-2010 |
20100144247 | Abrasive machining media containing thermoplastic polymer - The present invention incorporates at least one thermoplastic or elastomeric polymer in abrasive flow machining media either as the sole or as one of the polymeric constituents. The presence of thermoplastic polymer imparts a greater elastomer characteristic (elasticity, compression resistance, increased relaxation times) as contrasted with traditional media. Enhanced elastomeric characteristics enable more uniform abrasive machining. In a particularly preferred embodiment, silicone- or polyorganosiloxane-based medium contains elastic silicone rubber particles dispersed therethrough to achieve increased relaxation times comparable to those attainable with the inclusion of a thermoplastic polymer. | 06-10-2010 |
20100159807 | Polymeric barrier removal polishing slurry - The aqueous slurry is useful for chemical mechanical polishing semiconductor substrates having copper interconnects. The slurry includes by weight percent, 0 to 25 oxidizing agent, 1 to 50 abrasive particles, 0.001 to 10 inhibitor for decreasing static etch of the copper interconnects, 0.001 to 5 poly(methyl vinyl ether) having a formula as follows: | 06-24-2010 |
20100159808 | METHOD OF GLASS SURFACE FINE PROCESSING - The present invention relates to a method of glass surface fine processing for forming a convex portion on a surface of a glass containing alkali-metal oxides, the method including: a step of coating a surface of a first region adjacent to a surface of a second region which is to be a convex portion, with a protective layer; a step of removing alkali ions from the surface of the second region; a step of removing the protective layer from the surface of the first region; and a step of polishing the surface of the second region from which the alkali ions have been removed and the surface of the first region from which the protective layer has been removed. | 06-24-2010 |
20100197201 | POLISHING LIQUID FOR METAL AND METHOD OF POLISHING - Disclosed is a metal-polishing liquid comprising: a metal-oxide-dissolving agent; a metal-oxidizing agent; a metal anticorrosive; a water-soluble polymer having a weight-average molecular weight of 8,000 or higher and having an anionic functional group and a nonionic functional group; and water, and having a pH within the range of 2.5 or higher but 5.0 or less. The metal-polishing liquid is effective in reducing the frictional force in polishing which generates during CMP. And is highly effective in flattening the surface of a work to be polished. | 08-05-2010 |
20100197202 | Method and Product for Cutting Materials - The present disclosure relates to a wire and a method of forming a wire including an iron based glass forming alloy including iron present in the range of 43.0 to 68.0 atomic percent, boron present in the range of 12.0 to 19.0 atomic percent, nickel present in the range of 15.0 to 17.0 atomic percent, cobalt present in the range of 2.0 to 21.0 atomic percent, optionally carbon present in the range of 0.1 to 6.0 atomic percent and optionally silicon present in the range of 0.4 to 4.0 atomic percent, wherein said wire has a thickness of 140 μm or less and wherein said wire includes spinodal glass matrix microconstituents. The wire may be used in abrading a substrate. | 08-05-2010 |
20100203809 | METHOD OF POLISHING A MAGNETIC HARD DISC SUBSTRATE - Polishing particles are made of artificial diamond produced by a shock method, having density of 3.0-3.35 g/cm | 08-12-2010 |
20100210184 | CMP SLURRY FOR SILICON FILM POLISHING AND POLISHING METHOD - Disclosed is a CMP slurry for silicon film polishing, comprising abrasive grains, an oxidizing agent, a cationic surfactant, and water. This CMP slurry is suitable for the CMP step of a silicon film of semiconductor devices, since it enables to obtain excellent planarity and excellent performance of controlling the remaining film thickness, while improving the yield and reliability of the semiconductor devices. This CMP slurry also enables to reduce the production cost. | 08-19-2010 |
20100210185 | Conductive Hydrocarbon Fluid - The disclosure is directed to a processing fluid including at least 50 wt % of an aliphatic hydrocarbon having an average chain length of 8 to 16 carbons, 0.005 wt % to 10.0 wt % of Lewis active components, and not greater than 1.0 wt % water. The Lewis active components includes a Lewis acid and a Lewis base. The processing fluid has a conductivity of at least 10 nS/m and a Cannon viscosity of about 0.5 cp to about 5 cp at 25° C. | 08-19-2010 |
20100221983 | MULTI-LAYERED CHEMICAL-MECHANICAL PLANARIZATION PAD - The present disclosure relates to a chemical mechanical planarization pad and a method of making and using a chemical mechanical planarization pad. The chemical mechanical planarization pad may include a first component including a water soluble composition and water insoluble composition exhibiting a solubility in water of less than that of the water soluble composition, wherein at least one of the water soluble and water insoluble compositions of the first component is formed of fibers. The chemical mechanical planarization pad may also include a second component, wherein the first component is present as a discrete phase in a continuous of the second component. | 09-02-2010 |
20100227532 | METHOD OF SURFACE TREATMENT OF GROUP III NITRIDE CRYSTAL FILM, GROUP III NITRIDE CRYSTAL SUBSTRATE, GROUP III NITRIDE CRYSTAL SUBSTRATE WITH EPITAXIAL LAYER, AND SEMICONDUCTOR DEVICE - A method of surface treatment of a Group III nitride crystal film includes polishing a surface of the Group III nitride crystal film, wherein a pH value x and an oxidation-reduction potential value y (mV) of a polishing liquid used for the polishing satisfy both relationships of y≧−50x+1,000 and y≦−50x+1,900. | 09-09-2010 |
20100240283 | Method of Chemical Mechanical Polishing - [Problem] To improve polishing efficiency while lowering shear force added to semiconductor wafers while increasing polishing speed, without damaging the wafer's processing surface or the membrane under it. | 09-23-2010 |
20100248593 | POLISHING SLURRY, PROCESS FOR PRODUCING THE SAME, POLISHING METHOD AND PROCESS FOR PRODUCING GLASS SUBSTRATE FOR MAGNETIC DISK - The present invention provides a process for producing a polishing slurry, which achieves high-speed polishing of a principal plane of a glass substrate even when ceria crystal fine particles or ceria-zirconia solid solution crystal fine particles are employed. | 09-30-2010 |
20100267315 | POLISHING COMPOSITION - The present invention provides a polishing composition for polishing copper or copper alloy, comprising: an oxidizing agent (A); at least one acids (B) selected from amino acids, carboxylic acids of 8 or less carbon atoms, or inorganic acids; a sulfonic acid (C) having an alkyl group of 8 or more carbon atoms; a fatty acid (D) having an alkyl group of 8 or more carbon atoms; and an N-substituted imidazole (E) represented by the following general formula ( | 10-21-2010 |
20100304644 | METHOD AND DEVICE FOR MECHANICALLY PROCESSING DIAMOND - Method and device for processing a surface ( | 12-02-2010 |
20100323584 | POLISHING LIQUID FOR METAL FILM AND POLISHING METHOD - The invention relates to a polishing liquid for metal film comprising 7.0% by weight or more of an oxidizer for metal, a water-soluble polymer, an oxidized metal dissolving agent, a metal anticorrosive agent and water, provided that the total amount of the polishing liquid for metal film is 100% by weight,
| 12-23-2010 |
20110003535 | METHOD AND DEVICE FOR MACHINING A PART BY ABRASION - The abrasion machining method according to the invention, for abrading a part that cannot be machined by conventional means, comprises the following steps:
| 01-06-2011 |
20110009033 | POLISHING SLURRY FOR METAL FILMS AND POLISHING METHOD - Provided are a polishing slurry for metal films and a polishing method which restrain the generation of erosion and seams, and makes the flatness of a surface polished therewith or thereby high. The slurry and the method are a polishing slurry, for metal films, comprising abrasive grains, a methacrylic acid based polymer and water, and a polishing method using the slurry, respectively. | 01-13-2011 |
20110028072 | Surface Treatment of a Polymeric Stent - Methods of treating the polymeric surfaces of a stent with a fluid including a solvent for the surface polymer are disclosed. | 02-03-2011 |
20110039477 | Processing Nickel Bearing Sulphides - The present invention provides a method of separating nickel bearing sulphides from mined ores or concentrates of mined ores that contain talc particles is disclosed. The method comprises adjusting the Eh of a slurry of mined ores or concentrates of mined ores and making particles of nickel bearing sulphides less hydrophobic than talc particles and floating the nickel bearing sulphide particles from the slurry. | 02-17-2011 |
20110045743 | SCRATCH REMOVAL AND DEVICE AND METHOD - A scratch removal tool that includes a motor, a housing, a rotatable shaft operably coupled to the motor and movable in an axial direction along a length of the shaft, and a head assembly. The head assembly includes a shroud member having an open end, a pad member, a slurry input, a slurry output, and a seal member. The pad member is positioned within the shroud and mounted to the shaft. Rotation of the shaft rotates the pad member. Axial movement of the shaft moves the pad member relative to the open end of the shroud. The slurry input and slurry are in fluid communication with the pad member. The seal member is positioned at the open end of the shroud. | 02-24-2011 |
20110053462 | AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING AND CHEMICAL MECHANICAL POLISHING METHOD - A chemical mechanical polishing aqueous dispersion including (A) silica particles, and (B1) an organic acid, the sodium content, the potassium content, and the ammonium ion content of the silica particles (A) determined by ICP atomic emission spectrometry, ICP mass spectrometry, or ammonium ion quantitative analysis using ion chromatography having a relationship in which the sodium content is 5 to 500 ppm and at least one of the potassium content and the ammonium ion content is 100 to 20,000 ppm. | 03-03-2011 |
20110059680 | AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING AND CHEMICAL MECHANICAL POLISHING METHOD - A chemical mechanical polishing aqueous dispersion includes (A) a graft polymer that includes an anionic functional group in a trunk polymer, and (B) abrasive grains. | 03-10-2011 |
20110070809 | APPARATUS AND METHOD FOR SPIRAL POLISHING WITH ELECTROMAGNETIC ABRASIVE - An apparatus and method for spiral polishing with electromagnetic abrasive has adopted the principle of electromagnetic and magnetic abrasive along with a lead screw to polish the inner or outer surface of a precise screw or a complicated part. The apparatus includes a clamp, a lead screw, a first electromagnet, and a second electromagnet assembled in an airtight space, wherein the airtight space is filled with magnetic abrasive which is driven by the rotation of the lead screw and the electromagnetic function to polish a processed part in a regular shape or in an irregular shape. | 03-24-2011 |
20110104991 | NOZZLE CONFIGURATIONS FOR ABRASIVE BLASTING - Disclosed herein are nozzle configurations for an abrasive blasting system. The system can comprise multiple hoppers for feeding separate powders streams to a fluid jet. The separate powder streams can be mixed in a frustoconical or conical mixer prior to delivery to the substrate surface. Also disclosed are methods of texturizing the substrate surface by moving the substrate or nozzle(s) during the delivery of dopant(s). Methods for achieving a uniform distribution of dopant are also described. Also disclosed herein are coaxial nozzle configurations having an outer focusing stream to converge and/or mix with an inner particle stream. | 05-05-2011 |
20110104992 | POLISHING SOLUTION FOR METAL FILMS AND POLISHING METHOD USING THE SAME - A polishing solution for metal films that comprises an oxidizing agent, a metal oxide solubilizer, a metal corrosion preventing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a copolymer of acrylic acid and methacrylic acid, the copolymerization ratio of methacrylic acid in the copolymer being 1-20 mol % based on the total of acrylic acid and methacrylic acid. | 05-05-2011 |
20110111676 | MULTIPLE-PHASE SURFACES, AND METHOD THEREFOR - A workpiece having a multiple-phase working surface, and a lapping process for producing the surface, the process including: (a) providing a system including: (i) a workpiece having a multiple-phase working surface having a first continuous solid phase, and a second solid phase, intimately dispersed within the continuous phase in the multiple-phase working surface, the continuous phase having a hardness exceeding a hardness of the second phase by a Mohs Hardness of at least 0.5; (ii) a contact surface, disposed generally opposite the working surface, having a Shore D hardness within a range of 40-90, and a Young's modulus of less than 20 gigapascals; (iii) a plurality of abrasive particles, freely disposed between the contact and working surfaces, and (b) lapping the working surface by exerting a pressure on the surfaces and applying a relative motion between the surfaces, to effect an elastic interaction between the contact surface and the abrasive particles in which at least a portion of the abrasive particles penetrate the working surface, to produce a lapped product having a modified working surface, in which an exterior surface of the second phase is recessed by an average of at least 1.5 micrometers with respect to an exterior surface of the continuous phase. | 05-12-2011 |
20110117820 | MAGNETIC FIXTURE - A fixture is provided for retaining a metal workpiece for contact by finishing media during operation of a media based finishing operation. The fixture comprises a body and a magnet for retaining the workpiece in contact with the body. By use of super-magnetic materials a significant holding force may be achieved. | 05-19-2011 |
20110117821 | CHEMICAL MECHANICAL POLISHING AQUEOUS DISPERSION, CHEMICAL MECHANICAL POLISHING METHOD USING THE SAME, AND METHOD OF RECYCLING CHEMICAL MECHANICAL POLISHING AQUEOUS DISPERSION - A chemical mechanical polishing aqueous dispersion includes (A) abrasive grains, (B) an organic acid, and (C1) copper ions or (C2) at least one kind of metal atoms selected from Ta, Ti, and Rb, the chemical mechanical polishing aqueous dispersion including the copper ions (C1) at a concentration of 1×10 | 05-19-2011 |
20110136410 | METHOD FOR VIBRATION POLISHING VEHICLE WHEEL - A method for polishing a vehicle wheel having a three-dimensional shape, the vehicle wheel including a disc-shaped disc portion in which a plurality of window holes are provided and a cylindrical rim portion that is located around the disc portion, the method comprising:
| 06-09-2011 |
20110159785 | PREPARATION OF SYNTHETIC QUARTZ GLASS SUBSTRATES - A synthetic quartz glass substrate is prepared by (1) polishing a synthetic quartz glass substrate with a polishing slurry comprising colloidal particles, an ionic organic compound having an electric charge of the same type as the colloidal particles, and water, and (2) immersing the polished substrate in an acidic or basic solution for etching the substrate surface to a depth of 0.001-1 nm. The method produces a synthetic quartz glass substrate while preventing formation of defects of a size that is detectable by the high-sensitivity defect inspection tool, and providing the substrate with a satisfactory surface roughness. | 06-30-2011 |
20110159786 | Polishing Pad with Porous Elements and Method of Making and Using the Same - The disclosure is directed to polishing pads with porous polishing elements, and to methods of making and using such pads in a polishing process. In one exemplary embodiment, the polishing pad includes a multiplicity of polishing elements, at least some of which are porous, each polishing element affixed to a support layer so as to restrict lateral movement of the polishing elements with respect to one or more of the other polishing elements, but remaining moveable in an axis normal to a polishing surface of the polishing elements. In certain embodiments, the polishing pad may include a guide plate positioned to arrange and optionally affix the plurality of polishing elements on the support layer, and additionally, a polishing composition distribution layer. In some embodiments, the pores are distributed throughout substantially the entire porous polishing element. In other embodiments, the pores are distributed substantially at the polishing surface of the elements. | 06-30-2011 |
20110183581 | POLISHING COMPOSITION AND POLISHING METHOD USING THE SAME - There is provided a polishing composition, containing abrasive grains and an acid represented either by R | 07-28-2011 |
20110195638 | METHOD FOR PRODUCING GLASS SUBSTRATE AND METHOD FOR PRODUCING MAGNETIC RECORDING MEDIUM - Disclosed is a method for producing a glass substrate, which involves a first polishing step and a second polishing step both for polishing the surface of the glass substrate with a polishing solution containing a polishing agent. The method is characterized by additionally involving a heating step for heating the glass substrate, wherein the heating step is carried out after the first polishing step and before the second polishing step. | 08-11-2011 |
20110223841 | METHOD FOR POLISHING A SEMICONDUCTOR WAFER - A method of polishing a semiconductor wafer includes polishing a surface of the semiconductor wafer using a polishing pad while supplying a polishing agent slurry containing abrasives during a first step. The polishing pad is free of abrasives and includes a first surface that contacts the semiconductor wafer, the first surface having a surface structure including elevations. Supply of polishing agent slurry is subsequently ended and, in a second step, the surface of the semiconductor wafer is polished using the polishing pad while supplying a polishing agent solution having a pH value of at least 12 that is free of solids. | 09-15-2011 |
20110230123 | POLISHER, PRESSURE PLATE OF THE POLISHER AND METHOD OF POLISHING - A polisher, a pressure plate ( | 09-22-2011 |
20110244760 | METHOD FOR POLISHING A SEMICONDUCTOR WAFER - A method of polishing a semiconductor wafer includes applying a polishing pad to the semiconductor wafer so as to subject the semiconductor wafer to a polishing process and supplying an aqueous polishing agent solution between the polishing pad and the semiconductor wafer. The polishing pad includes fixedly bonded abrasives of SiO | 10-06-2011 |
20110256809 | METHOD OF POLISHING BLADED DISKS FOR A TURBOMACHINE AND POLISHING DEVICE - A device for polishing centrifugal impellers for a turbomachine including a vat configured to be filled with a polishing agent, and an impeller support configured to make the impeller rotate around its axis and move it along its axis such that all of points of the impeller have a helical movement whereof the pitch is close to that of the helix from which the general shape of the airflow channels of the impeller comes, delimited by the blades of the impeller. | 10-20-2011 |
20110300778 | ABRADING AGENT AND ABRADING METHOD - A polishing agent which comprises a composition containing an inorganic acid, an amino acid, a protective film-forming agent, an abrasive, an oxidizing agent, an organic acid and water, adjusted to a pH of 1.5-4, wherein the amount of potassium hydroxide required to raise the pH of the composition without the organic acid to 4 is at least 0.10 mol with respect to 1 kg of the composition without the organic acid, and the organic acid contains at least two carboxyl groups, wherein the logarithm of the inverse of the first acid dissociation constant (pKa1) is no greater than 3. | 12-08-2011 |
20110312251 | Abrasive, Method of Polishing Target Member and Process for Producing Semiconductor Device - To polish polishing target surfaces of SiO | 12-22-2011 |
20120003901 | COMPOSITION FOR ADVANCED NODE FRONT-AND BACK-END OF LINE CHEMICAL MECHANICAL POLISHING - The present disclosure is directed to a highly dilutable chemical mechanical polishing concentrate comprising an abrasive, an acid, a stabilizer, and water with a point-of-use pH ranging from 2.2-3.5 for planarizing current and next generation semiconductor integrated circuit FEOL/BEOL substrates. | 01-05-2012 |
20120021675 | SYNTHETIC QUARTZ GLASS SUBSTRATE POLISHING SLURRY AND MANUFACTURE OF SYNTHETIC QUARTZ GLASS SUBSTRATE USING THE SAME - A polishing slurry comprising a collagen derivative and a colloidal solution is effective for polishing of synthetic quartz glass substrates. It prevents formation of defects having a size that can be detected by a high-sensitivity flaw detector. | 01-26-2012 |
20120028546 | METHOD AND APPARATUS FOR TRIMMING THE WORKING LAYERS OF A DOUBLE-SIDE GRINDING APPARATUS - A method for trimming two working layers including bonded abrasive applied on mutually facing sides of an upper and a lower working disk of a grinding apparatus configured for simultaneous double-side processing of flat workpiece includes providing the grinding apparatus including the upper and lower working disks and providing at least one carrier including an outer toothing. The upper and lower working disks are rotated. The carrier is moved between the rotating working disks using a rolling apparatus and the outer toothing on cycloidal paths relative to working layers of the working disks. Loose abrasives are added to a working gap formed between the working layers. A carrier, without workpieces inserted therein, is moved in the working gap so as to effect material removal from the working layers. | 02-02-2012 |
20120045969 | POLISHING AMORPHOUS/CRYSTALLINE GLASS - An apparatus and associated method for polishing a workpiece with a polishing slurry having ceria particulates and silica particulates. | 02-23-2012 |
20120045970 | OXIDIZING PARTICLES BASED SLURRY FOR NOBEL METAL INCLUDING RUTHENIUM CHEMICAL MECHANICAL PLANARIZATION - A method for chemical mechanical planarization of ruthenium is provided. A semiconductor substrate comprising ruthenium is contacted with a chemical mechanical polishing system comprising an oxidizing particle, an abrasive, a polishing pad and a liquid carrier. The pH of the polishing composition is about 8 to 12. A high ruthenium removal rate for the inventive slurry was observed. The disclosed oxidizing particle advantageously improves the polishing speed of ruthenium under low polishing pressure and decreases the scratches generated on low-k material. | 02-23-2012 |
20120064805 | PROCESS FOR REGENERATING CASKS OR THE LIKE AND DEVICE FOR THE IMPLEMENTATION THEREOF - The object of the invention is a process for regenerating a wooden cask or the like, used in particular for maturing wine, characterized in that it consists in spraying an abrasive against at least a portion of the inside surface of the cask and preferably the entire surface so as to remove the area of wood spoiled by deposits and microorganisms. | 03-15-2012 |
20120077419 | RASPBERRY-TYPE METAL OXIDE NANOSTRUCTURES COATED WITH CEO2 NANOPARTICLES FOR CHEMICAL MECHANICAL PLANARIZATION (CMP) - Raspberry-type coated particles comprising a core selected from the group consisting of metal oxides of Si, Ti, Zr, Al, Zn and mixtures thereof with a core size of from 20 to 100 nm wherein the core is coated with CeCO | 03-29-2012 |
20120100782 | APPARATUS AND METHOD FOR POLISHING CAVITIES IN MECHANICAL COMPONENTS - An apparatus ( | 04-26-2012 |
20120100783 | POLISHING PAD, MANUFACTURING METHOD THEREOF AND POLISHING METHOD - A polishing pad capable of improving an affinity to polishing liquid and stabilizing polishing performance is provided. A polishing pad | 04-26-2012 |
20120156968 | POLISHING LIQUID COMPOSITION FOR MAGNETIC DISK SUBSTRATE - The present invention provides a polishing liquid composition for a magnetic disk substrate that can reduce residual inorganic particles and scratches without loss of productivity and a method of producing a magnetic disk substrate using the polishing liquid composition. The polishing liquid composition contains inorganic particles, a diallylamine polymer, an acid and water, the diallylamine polymer includes one or more constitutional units selected from those represented by the following general formulas (I-a), (I-b), (I-c) and (I-d), and the content of the diallylamine polymer in the polishing liquid composition is 0.008 to 0.100 wt % | 06-21-2012 |
20120214384 | Stent and Method and Device for Fabricating the Stent - Stent, as well as a method and device for fabricating the stent, wherein the stent has a tubular lattice structure comprising individual struts and at least one strut of which at least one longitudinal section runs with at least one directional component in the radial circumferential direction of the stent, wherein the surface of the longitudinal section facing the outside of the stent is curved only about the longitudinal axis of the stent. According to the invention, the surface of longitudinal section of the strut, which surface faces the inside of the stent, has such a curvature that the strut cross section is fluidically optimized. | 08-23-2012 |
20120214385 | Polyalkylene Glycol-Grafted Polycarboxylate Suspension and Dispersing Agent for Cutting Fluids and Slurries - Cutting fluids for brittle materials, e.g., silicon ingot, comprise, in weight percent: A. 70-99% polyalkylene glycol (PAG), e.g., polyethylene glycol; B. 0.01-10% PAG-grafted polycarboxylate; and C. 0-30% water. These cutting fluids are used with abrasive materials, e.g., silicon carbide (SiC), to form cutting slurries. The slurry is sprayed on the cutting tool, e.g., a wire saw, to cut a brittle work piece, e.g., a silicon ingot. | 08-23-2012 |
20120225610 | METHOD OF MANUFACTURING MAGNETIC RECORDING MEDIUM GLASS SUBSTRATE - Provided is a magnetic recording medium glass substrate manufacturing method capable of manufacturing a magnetic recording medium glass substrate having high surface smoothness and low surface waviness with productivity. In a primary lapping process and a secondary lapping process of the manufacturing method, diamond pads ( | 09-06-2012 |
20120270476 | Diatomaceous Earth-Containing Slurry Composition And Method For Polishing Organic Polymer-Based Ophthalmic Substrates Using The Same - The present invention provides a slurry composition and method for polishing organic polymer-based ophthalmic substrates. The slurry composition according to the invention includes an aqueous dispersion of particles of diatomaceous earth and, optionally, particles of abrasives selected from alumina, zirconia, silica, titania and combinations of the foregoing. Slurry compositions according to the invention can be used to polish all types of organic polymer-based ophthalmic substrates, but are particularly useful for polishing organic polymer-based ophthalmic substrates having an index of refraction greater than 1.498 because they remove such materials at a greater efficiency than conventional slurry compositions. | 10-25-2012 |
20120289125 | METHOD OF POLISHING TRANSPARENT ARMOR - A method of polishing transparent armor, preferably to optical clarity. The method can be used on flat or contoured armor, manually or via robotic automation. The method includes using a step-wise progression of diamond, structured abrasive articles. | 11-15-2012 |
20120302139 | METHODS OF FINISHING AN EDGE OF A GLASS SHEET - Methods of finishing an edge of a glass sheet comprise the step of machining the edge of the glass sheet into a predetermined cross-sectional profile along a plane taken transverse to the edge of the glass sheet with an initial average edge strength ES | 11-29-2012 |
20120315826 | Device and Method for Measuring Physical Parameters of Slurry and Chemical Mechanical Polishing Apparatus Comprising the Device - The present disclosure discloses a device for measuring physical parameters of a slurry used in a chemical mechanical polishing apparatus and measuring method using the same. The chemical mechanical polishing apparatus comprises a polishing head, a rotary table, a polishing platen and a polishing pad having a through-hole. The device for measuring physical parameters of slurry comprises: a sensor disposed in the polishing platen and adapted to contacted the slurry via the through-hole of the polishing pad for measuring the physical parameters of the slurry; a converter disposed in the rotary table and coupled to the sensor for converting a measuring signal of the sensor into a standard electrical signal; and a processing unit coupled to the converter for acquiring the standard electrical signal to calculate physical parameters of the slurry. According to the device for measuring the physical parameters of the slurry of an embodiment of the present disclosure, the physical parameters of slurry between the polishing head and the polishing pad may be in-suit measured and obtained. The present disclosure further discloses a chemical mechanical polishing apparatus having the device for measuring the physical parameters of the slurry. | 12-13-2012 |
20120322346 | SLURRY, POLISHING FLUID SET, POLISHING FLUID, AND SUBSTRATE POLISHING METHOD USING SAME - The slurry of the invention comprises abrasive grains and water, wherein the abrasive grains include tetravalent cerium hydroxide particles and produce light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with the content of the abrasive grains adjusted to 1.0 mass %. The polishing liquid of the invention comprises abrasive grains, an additive and water, wherein the abrasive grains include tetravalent cerium hydroxide particles and produce light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with the content of the abrasive grains adjusted to 1.0 mass %. | 12-20-2012 |
20120329370 | SLURRY, POLISHING LIQUID SET, POLISHING LIQUID, METHOD FOR POLISHING SUBSTRATE, AND SUBSTRATE - The polishing liquid according to the embodiment comprises abrasive grains, an additive and water, wherein the abrasive grains satisfy either or both of the following conditions (a) and (b).
| 12-27-2012 |
20130005218 | APPARATUS AND METHOD FOR FORMATION OF FOIL-SHAPED STENT STRUTS - A device and method is disclosed for reducing turbulent blood flow over stent struts of an intravascular stent implanted in, for example, a coronary artery. An abrasive slurry is passed over the struts of an intravascular stent in order to remove a portion of the stent struts to form an airfoil shape. When the stent having airfoil-shaped struts is implanted in an artery, the flow of blood over the airfoil shape will reduce the likelihood of turbulent blood flow and thereby will reduce the likelihood of turbulent blood flow and thereby reduce the likelihood of a buildup in plaque or injury to the vessel wall. | 01-03-2013 |
20130005219 | CHEMICAL MECHANICAL POLISHING AQUEOUS DISPERSION AND CHEMICAL MECHANICAL POLISHING METHOD USING SAME - A chemical mechanical polishing aqueous dispersion includes (A) silica particles that include at least one functional group selected from the group consisting of a sulfo group or salts thereof, and (B) an acidic compound. | 01-03-2013 |
20130012102 | POLISHING SLURRY AND POLISHING METHOD THEREFOR - The present invention provides a polishing technique which enables polishing of silicon carbide, which is difficult to be polished, with high efficiency and high surface accuracy. The present invention relates to a polishing slurry for polishing a substrate, which comprises abrasive particles containing manganese oxide as a main component and in which the content of the abrasive particles is less than 10% by weight based on the polishing slurry. The polishing slurry of the present invention has a pH of preferably 7 or more. It is particularly preferable to use manganese dioxide as abrasive particles. The polishing slurry of the present invention is suitable for a substrate of silicon carbide. | 01-10-2013 |
20130017765 | LAPPING CARRIER AND METHOD OF USING THE SAME - A lapping carrier includes a base having first and second opposed major surfaces and at least one aperture extending from the first major surface to the second major surface. A wear layer is disposed on the first major surface of the base. The wear layer includes an outer polymer layer comprising at least one of polyether ether ketone or ultrahigh molecular weight polyethylene, and a first adhesive layer disposed between the outer polymer layer and the base | 01-17-2013 |
20130072089 | MULTI-SPINDLE CHEMICAL MECHANICAL PLANARIZATION TOOL - An apparatus for chemical mechanical planarization includes a spindle assembly structure and at least one substrate carrier, which make a linear lateral movement relative to each other while abrasive surfaces of a plurality of cylindrical spindles in the spindle assembly structure contact, and rotate against, at least one substrate mounted on the at least one substrate carrier. The direction of the linear lateral movement is within the plane that tangentially contacts the plurality of cylindrical spindles, and can be orthogonal to the axes of rotation of the plurality of cylindrical spindles. | 03-21-2013 |
20130072090 | Polishing Device With Rotary Transmission Leadthrough - A polishing device for zone polishing of optical lenses with a tilting base part for direct or indirect holding of a polishing pad, wherein the base part for driving purposes is rotationally driven and connected to a spindle shaft, rotationally mounted, of a polishing spindle, and a rotary leadthrough is provided, by which the feeding of polishing compound in a polishing compound channel of the base part is assured, wherein the rotary leadthrough is directly or indirectly arranged on the spindle shaft and the base part can tilt relative to the rotary leadthrough. The rotary leadthrough stands in a flow connection with the base part via a flexible fluid connection. | 03-21-2013 |
20130115859 | SURFACE TREATMENT METHOD OF POLISHING PAD AND POLISHING METHOD OF WAFER USING THE SAME - Provided is a surface treatment method of a polishing pad. The surface treatment method of the polishing pad includes locating a wafer on the polishing pad including a polishing material, supplying a polishing pad polishing material between the polishing pad and the wafer to expose the polishing material included in the polishing pad, and polishing the wafer using the exposed polishing material. | 05-09-2013 |
20130122785 | METHOD OF PREPARING SUBSTRATE - A substrate is prepared by polishing a surface of the substrate using a polishing pad while feeding a slurry. The polishing pad has a porous nap layer which comes in contact with the substrate surface and is made of a base resin comprising at least three resins, typically an ether resin, ester resin, and polycarbonate resin. The polished substrate has a highly flat surface with a minimal number of defects. | 05-16-2013 |
20130130595 | POLISHING AGENT AND POLISHING METHOD - The present invention relates to a polishing agent for polishing a surface to be polished of an object to be polished, the polishing agent including: first silicon oxide fine particles having an average primary particle size of 5 to 20 nm; second silicon oxide fine particles having an average primary particle size of 40 to 110 nm; and water, in which a ratio of the first silicon oxide fine particles to a total amount of the first silicon oxide fine particles and the second silicon oxide fine particles is from 0.7 to 30% by mass. | 05-23-2013 |
20130149941 | Method Of Machining Semiconductor Substrate And Apparatus For Machining Semiconductor Substrate - A method of machining a semiconductor substrate using a soft polishing pad and an apparatus for machining a semiconductor substrate which has a soft polishing pad. The method includes the steps of lapping a surface of the semiconductor substrate, and polishing the lapped surface of the semiconductor substrate. The step of polishing the lapped surface of the semiconductor substrate includes polishing the lapped surface of the semiconductor substrate using slurry containing an abrasive interposed between the semiconductor substrate and a polishing pad which has a shore D hardness of 65 or less. | 06-13-2013 |
20130196573 | SUBSTRATE HOLDER, POLISHING APPARATUS, AND POLISHING METHOD - The substrate holder is a device for holding a substrate and pressing it against a polishing pad. The substrate holder includes: an inner retaining ring vertically movable independently of the top ring body and arranged around the substrate; an inner pressing mechanism to press the inner retaining ring against the polishing surface of the polishing pad; an outer retaining ring to vertically movable independently of the inner retaining ring and the top ring body; an outer pressing mechanism to press the outer retaining ring against the polishing surface; and a supporting mechanism to receive a lateral force applied to the inner retaining ring from the substrate during polishing of the substrate and to tiltably support the outer retaining ring. | 08-01-2013 |
20130210320 | TITANIUM ALUMINIDE ARTICLE WITH IMPROVED SURFACE FINISH - Titanium-containing articles having improved surface finishes and methods for changing the surface of titanium containing articles, for example by removing overstock, are provided. One example method includes passing a fluid at high pressure across a surface of an titanium aluminide alloy-containing article, for example, a turbine blade, at high linear speed and deforming the surface of the titanium aluminide alloy-containing article, and removing material from the surface of the titanium aluminide alloy-containing article. Though aspects of the invention can be used in fabricating high performance turbine blades, the methods disclosed can be applied to the treatment of any titanium-containing article for which it is difficult to obtain an improved surface finish. | 08-15-2013 |
20130217307 | METHOD AND APPARATUS FOR MULTIPLE CUTOFF MACHINING OF RARE EARTH MAGNET BLOCK, CUTTING FLUID FEED NOZZLE, AND MAGNET BLOCK SECURING JIG - In a method for multiple cutoff machining a rare earth magnet block, a cutting fluid feed nozzle having a plurality of slits is combined with a plurality of cutoff abrasive blades coaxially mounted on a rotating shaft, each said blade comprising a base disk and a peripheral cutting part. The slits in the feed nozzle into which the outer peripheral portions of cutoff abrasive blades are inserted serve to restrict any axial run-out of the cutoff abrasive blades during rotation. Cutting fluid is fed from the feed nozzle through slits to the rotating cutoff abrasive blades and eventually to points of cutoff machining on the magnet block. | 08-22-2013 |
20130225049 | Methods of Finishing a Sheet of Material With Magnetorheological Finishing - Methods of finishing a sheet of material, such as a glass sheet, include finishing an edge portion of the sheet of material with magnetorheological finishing. In one example, the average thickness of the sheet of material between a first face and a second face is from 50 μm to about 500 μm. In another example, the method consists essentially of a single step of finishing the edge portion of the glass sheet with magnetorheological finishing such that the entire edge portion is shaped between the first face and the second face during the a single magnetorheological finishing step. | 08-29-2013 |
20130260650 | COMPOSITION FOR POLISHING AND METHOD OF POLISHING SEMICONDUCTOR SUBSTRATE USING SAME - Provided is a polishing composition containing abrasive grains, at least one type of alcohol compound selected from the group consisting of aliphatic alcohols with 2 to 6 carbon atoms and glycol ethers with 3 to 10 carbon atoms, at least one type of basic compound selected from the group consisting of quaternary ammonium salts and alkali metal salts, and water. The average primary particle diameter of the abrasive grains is 5 to 50 nm. The content of the alcohol compound in the polishing composition is 0.01 to 1% by mass. The polishing composition is mainly used in an application of polishing a semiconductor substrate surface. | 10-03-2013 |
20130288573 | Polishing Composition and Polishing Method Using The Same - The present invention provides a polishing composition that can be suitably used in polishing of polysilicon, and a polishing method using the polishing composition. The polishing composition contains a nitrogen-containing nonionic surfactant and abrasive grains and has a pH of 9 to 12. The content of the nitrogen-containing nonionic surfactant in the polishing composition is preferably 20 to 500 ppm. The abrasive grains contained in the polishing composition are preferably colloidal silica. The average primary particle diameter of the abrasive grains contained in the polishing composition is preferably 10 to 90 nm. The content of the abrasive grains in the polishing composition is preferably 1.0 to 5.0% by mass. | 10-31-2013 |
20140017981 | ALIGNMENT GEAR ARRANGEMENT FOR POLISHING HEAD - Among other things, one or more techniques and/or systems are provided for driving a body of a polishing head using an alignment gear. That is, an alignment gear, coupled to a housing of the polishing head, can transfer rotational force from the housing to the body responsive to the alignment gear being mated with a channel associated with the body. For example, the housing can supply pressure to the body, resulting in the body and the housing moving towards one another into a mated state. When the body and the housing are in the mated state, the alignment gear can mate with the channel (e.g., the alignment gear can fit within the channel). In this way, the alignment gear can drive the body by transferring rotational force to the body, resulting in the body rotating a semiconductor wafer against a polishing pad to polish the semiconductor wafer, for example. | 01-16-2014 |
20140213149 | SURFACE TREATMENT DEVICE AND SURFACE TREATMENT METHOD FOR LONG WIRELIKE ARTICLE - A surface treatment device and a surface treatment method for a long wirelike article, capable of grinding the surface of the long wirelike article efficiently with powder by cyclically repeating pressing and release of an elastic tube filled with the powder. At least one surface treatment unit includes a tube filled with powder which can be supplied to and discharged from the tube, and having a long wirelike article movably passing through the powder, a pressing mechanism for cyclically pressing and releasing the tube, and a feed mechanism for moving the long wirelike article passing through the powder. | 07-31-2014 |
20140242884 | SYNETHETIC QUARTZ GLASS SUBTRATE POLISHING SLURRY AND MANUFACTURE OF SYNETHETIC QUARTZ GLASS SUBSTRATE USING THE SAME - A polishing slurry comprising a collagen derivative and a colloidal solution is effective for polishing of synthetic quartz glass substrates. It prevents formation of defects having a size that can be detected by a high-sensitivity flaw detector. | 08-28-2014 |
20140248823 | COMPOSITION AND METHOD FOR POLISHING GLASS - The invention provides a chemical-mechanical polishing composition containing (a) abrasive particles, (b) a polymer, and (c) water, wherein (i) the polymer possesses an overall charge, (ii) the abrasive particles have a zeta potential Z | 09-04-2014 |
20140273757 | Drag Finishing System, Method and Fixture for Gas Turbine Engine Airfoils - A system, fixture and method for media finishing a cluster of airfoils are provided. The fixture may include a base having a first end and a second end, a receptacle disposed on the base and configured to receive the stator cluster, and at least one mock airfoil disposed at each of the first and second ends of the base in alignment with the airfoils of the cluster. | 09-18-2014 |
20140273758 | STRUCTURALLY ENHANCED PLASTICS WITH FILLER REINFORCEMENTS - A composition comprising a fluid, and a material dispersed in the fluid, the material made up of particles having a complex three dimensional surface area such as a sharp blade-like surface, the particles having an aspect ratio larger than 0.7 for promoting kinetic boundary layer mixing in a non-linear-viscosity zone. The composition may further include an additive dispersed in the fluid. The fluid may be a thermopolymer material. A method of extruding the fluid includes feeding the fluid into an extruder, feeding additives into the extruder, feeding a material into the extruder, passing the material through a mixing zone in the extruder to disperse the material within the fluid wherein the material migrates to a boundary layer of the fluid to promote kinetic mixing of the additives within the fluid, the kinetic mixing taking place in a non-linear viscosity zone. | 09-18-2014 |
20140335763 | POLISHING LIQUID COMPOSITION FOR MAGNETIC DISK SUBSTRATE - The present invention provides a polishing composition for a magnetic disk substrate that can reduce scratches and surface roughness of a polished substrate without impairing the productivity, and a method for manufacturing a magnetic disk substrate using the polishing composition. The polishing composition for a magnetic disk substrate includes colloidal silica having a ΔCV value of 0 to 10% and water. The ΔCV value is a difference (ΔCV=CV30−CV90) between a value (CV30) obtained by dividing a standard deviation based on a scattering intensity distribution at a detection angle of 30° according to a dynamic light scattering method by an average particle size based on the scattering intensity distribution and multiplying the result by 100 and a value (CV90) obtained by dividing a standard deviation based on a scattering intensity distribution at a detection angle of 90° according to the dynamic light scattering method by an average particle size based on the scattering intensity distribution and multiplying the result by 100. | 11-13-2014 |
20150017882 | SYSTEMS AND METHODS FOR EXTENDING CUTTING TOOL LIFE - In one embodiment, a system for extending cutting tool life includes a vise, a jig provided in the vise adapted to hold or support a magnetic cutting tool insert, a magnet holder positioned above the jig that can be rotated, a magnet held in proximity to the jig by the magnet holder, and a mixture including abrasive particles that extends between the magnet and the jig, the mixture being supported by a magnetic field generated by the magnet, wherein when the magnet holder rotates, the magnet and the mixture of magnetic and abrasive particles rotate to finish a surface of the tool insert. | 01-15-2015 |
20150099429 | REFURBISHING SYSTEM - A system for refurbishing at least one article attached to an assembly includes a refurbishing vessel that contains at least one wall and at least one open portion; means for providing an abrasive media to the vessel, wherein the abrasive media is caused to flow around the surfaces of the at least one article when the vessel is positioned on the at least one article; means for conformably sealing the at least one open portion against the flow of abrasive media, wherein a seal is created that conforms to the contours of the at least one article and prevents the abrasive media from escaping between the at least one article and the at least one wall; and means for removing the abrasive media from the vessel. | 04-09-2015 |
20150375360 | Tool for Abrasive Flow Machining of Airfoil Clusters - A tool for use during the abrasive flow polishing of an airfoil cluster in an abrasive flow machine is described. The tool may comprise a body and prongs extending from the body. Each prong of the tool may be configured to insert between an adjacent pair of airfoils of the airfoil cluster to create at least one channel therebetween. The channel may allow the flow of an abrasive media therethrough. | 12-31-2015 |
20160001418 | CMP APPARATUS AND CMP METHOD - A chemical mechanical polishing apparatus in which a rotating head having a polishing pad mounted thereon whose contact area with a polishing object is smaller than surface area of the polishing object is pressed against and brought into contact with a surface of the polishing object mounted face up on a table, and is rotated with the table at rest while supplying slurry onto a contact surface to polish for a predetermined time, and then the rotating head is moved within the surface of the polishing object to polish the entire surface of the polishing object sequentially, including a pressure adjustment mechanism for maintaining a pressing load on the contact surface constant during polishing. | 01-07-2016 |
20160040041 | ABRASIVE, ABRASIVE SET, AND METHOD FOR ABRADING SUBSTRATE - The polishing agent of the invention comprises water, an abrasive grain containing a hydroxide of a tetravalent metal element, and a specific glycerin compound. | 02-11-2016 |
20160060487 | COMPOSITION AND METHOD FOR POLISHING A SAPPHIRE SURFACE - An improved composition and method for polishing a sapphire surface is disclosed. The method comprises abrading a sapphire surface, such as a C-plane, R-plane or A-plane surface of a sapphire wafer, with a polishing composition comprising colloidal silica suspended in an aqueous medium, the polishing composition having an acidic pH and including a sapphire removal rate-enhancing amount of phosphoric acid. | 03-03-2016 |
20160082565 | ARRANGEMENTS AND METHODS FOR ABRASIVE FLOW MACHINING - A method of treating an interior surface of a workpiece ( | 03-24-2016 |
20160107286 | CMP POLISHING SOLUTION AND POLISHING METHOD USING SAME - A CMP polishing liquid for polishing a ruthenium-based metal, comprising polishing particles, an acid component, an oxidizing agent, a triazole-based compound, a quaternary phosphonium salt and water, wherein the acid component contains at least one selected from the group consisting of inorganic acids, monocarboxylic acids, carboxylic acids having a plurality of carboxyl groups and having no hydroxyl group, and salts thereof, the polishing particles have a negative zeta potential in the CMP polishing liquid, and the pH of the CMP polishing liquid is 3.0 or more and less than 7.0. | 04-21-2016 |
20160160669 | ABRASIVE FLOW MEDIA FIXTURE WITH END CONTOUR - A fixture assembly includes an inner diameter wall displaced from a main body by a first end wall with a convex surface and a second end wall with a concave surface. A method of machining a gas turbine engine component with an Abrasive Flow Media (AFM) process includes restricting a flow of media adjacent to an outer sidewall of an outer airfoil to be generally equal between each of a multiple of airfoils of the component. | 06-09-2016 |
20160167190 | SYSTEMS AND METHODS FOR FINISHING FLOW ELEMENTS | 06-16-2016 |
20160194538 | Polishing Material Particles, Method For Producing Polishing Material, And Polishing Processing Method | 07-07-2016 |
20180022960 | POLISHING COMPOSITION, POLISHING METHOD, AND METHOD FOR MANUFACTURING HARD BRITTLE MATERIAL SUBSTRATE | 01-25-2018 |