Class / Patent application number | Description | Number of patent applications / Date published |
438786000 | Tertiary silicon containing compound formation (e.g., oxynitride formation, etc.) | 69 |
20080268657 | Plasma Processing Method and Method for Manufacturing an Electronic Device - The application of oxynitriding treatment to electronic appliances involve the problem that N | 10-30-2008 |
20090023300 | METHOD OF FORMING SHADOW LAYER ON THE WAFER BEVEL - A method of forming a shadow layer on a wafer bevel region is provided. First, a substrate having the wafer bevel region and a central region is provided. Thereafter, an upper insulator and a lower insulator are provided. The upper insulator is disposed on an upper surface of the substrate and at least covers the central region. The lower insulator is disposed on a lower surface of the substrate and at least covers the central region. A shadow layer is then formed on the upper surface which is not covered by the upper insulator and on the lower surface which is not covered by the lower insulator. Next, the upper insulator and the lower insulator are removed. | 01-22-2009 |
20090035950 | NITRIDING METHOD OF GATE OXIDE FILM - A substrate processing method comprises the step of forming an oxide film on a silicon substrate surface, and introducing nitrogen atoms into the oxide film by exposing the oxide film to nitrogen radicals excited in plasma formed by a microwave introduced via a planar antenna. | 02-05-2009 |
20090042406 | SYSTEMS AND METHODS FOR FORMING METAL OXIDES USING METAL COMPOUNDS CONTAINING AMINOSILANE LIGANDS - A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more precursor compounds that include aminosilane ligands. | 02-12-2009 |
20090047799 | GATE OXIDE LEAKAGE REDUCTION - A method of manufacturing a semiconductor device comprising forming a gate oxide layer over a substrate subjecting the gate oxide layer to a first nitridation process, subjecting the gate oxide layer to a first anneal process after the first nitridation process, subjecting the gate oxide layer to a second nitridation process after the first anneal process, subjecting the gate oxide layer to a second anneal process after the second nitridation process, and forming a gate electrode over the gate oxide. | 02-19-2009 |
20090170345 | Method for manufacturing semiconductor device and substrate processing apparatus - To form an insulating film with extremely low concentration of impurities such as carbon, hydrogen, nitrogen, chlorine, etc in a film. There are provided the steps of forming a specific element-containing layer on a substrate by supplying source gas containing a specific element into a processing container in which the substrate is accommodated; changing the specific element-containing layer into a nitride layer, by activating and supplying gas containing nitrogen into the processing container; and changing the nitride layer into an oxide layer or an oxynitride layer, by activating and supplying gas containing oxygen into the processing container; with this cycle set as one cycle and performed for at least one or more times. | 07-02-2009 |
20090215281 | HDP-CVD SION FILMS FOR GAP-FILL - The present invention pertains to methods of depositing low stress/high index multi-layer films on a substrate using an HDP-CVD process. The multi-layer films include two lining layers and a bulk gap-fill layer and the HDP-CVD process employs a reduced substrate bias power during deposition of at least the second lining layer. Deposition of the three layers occurs at reduced deposition temperatures which further reduces the stress of the multi-layer film. The lower stress results in less defectivity which improves the films ability to maintain optical confinement of radiation. | 08-27-2009 |
20090253272 | Method for manufacturing semiconductor device and substrate processing apparatus - A gate insulating film with less leakage current is formed, while a surface temperature of a silicon substrate is decreased. Gas containing oxygen atoms and nitrogen atoms is supplied into a processing chamber, then the gas containing the oxygen atoms and the nitrogen atoms is activated by plasma, and the silicon substrate is subjected to processing by plasma, and a silicon dioxide film containing nitrogen is formed. | 10-08-2009 |
20090305517 | Method of Manufacturing Semiconductor Device and Substrate Processing Apparatus - A method of manufacturing a semiconductor device has: carrying a substrate into a process chamber; depositing a thin film on the substrate by supplying inside the process chamber a first film deposition gas including at least one element among plural elements forming a thin film to be deposited and capable of accumulating a film solely and a second film deposition gas including at least another element among the plural elements and incapable of accumulating a film solely; carrying the substrate on which is deposited the thin film out from inside the process chamber; and removing a first sediment adhering to an interior of the process chamber and a second sediment adhering to an interior of the supply portion and having a chemical composition different from a chemical composition of the first sediment by supplying cleaning gases inside the process chamber and inside a supply portion that supplies the first film deposition gas while changing at least one of a supply flow rate, a concentration, and a type between a cleaning gas to be supplied inside the process chamber and a cleaning gas to be supplied inside the supply portion. | 12-10-2009 |
20100120262 | Amino Vinylsilane Precursors for Stressed SiN Films - The present invention is a method to increase the intrinsic compressive stress in plasma enhanced chemical vapor deposition (PECVD) silicon nitride (SiN) and silicon carbonitride (SiCN) thin films, comprising depositing the film from an amino vinylsilane-based precursor. More specifically the present invention uses the amino vinylsilane-based precursor selected from the formula: [RR | 05-13-2010 |
20100233886 | Dielectric Films Comprising Silicon And Methods For Making Same - Described herein are methods of forming dielectric films comprising silicon, such as, but not limited to, silicon oxide, silicon oxycarbide, silicon carbide, and combinations thereof, that exhibit at least one of the following characteristics: low wet etch resistance, a dielectric constant of 6.0 or below, and/or can withstand a high temperature rapid thermal anneal process. Also disclosed herein are the methods to form dielectric films or coatings on an object to be processed, such as, for example, a semiconductor wafer. | 09-16-2010 |
20100233887 | PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - A production method for a semiconductor device comprising the first step of supplying a first reaction material to a substrate housed in a processing chamber to subject to a ligand substitution reaction a ligand as a reaction site existing on the surface of the substrate and the ligand of the first reaction material, the second step of removing the excessive first reaction material from the processing chamber, the third step of supplying a second reaction material to the substrate to subject a ligand substituted by the first step to a ligand substitution reaction with respect to a reaction site, the fourth step of removing the excessive second reaction material from the processing chamber, and a fifth step of supplying a third reaction material excited by plasma to the substrate to subject a ligand, not subjected to a substitution reaction with respect to a reaction site in the third step, to a ligand substitution reaction with respect to a reaction site, wherein the steps 1-5 are repeated a specified number of times until a film of a desired thickness is formed on the substrate surface. | 09-16-2010 |
20100240225 | MICROWAVE PLASMA PROCESSING APPARATUS, MICROWAVE PLASMA PROCESSING METHOD, AND MICROWAVE-TRANSMISSIVE PLATE - Disclosed is a microwave plasma processing apparatus ( | 09-23-2010 |
20100248497 | METHODS AND APPARATUS FOR FORMING NITROGEN-CONTAINING LAYERS - Methods and apparatus for forming nitrogen-containing layers are provided herein. In some embodiments, a method includes placing a substrate having a first layer disposed thereon on a substrate support of a process chamber; heating the substrate to a temperature of at least about 250 degrees Celsius; and exposing the first layer to a radio frequency (RF) plasma formed from a process gas comprising nitrogen while maintaining the process chamber at a pressure of about 10 mTorr to about 40 mTorr to transform at least an upper portion of the first layer into a nitrogen-containing layer. In some embodiments, the process gas includes ammonia (NH | 09-30-2010 |
20100323531 | METHOD FOR FORMING INSULATING FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for forming an insulating film includes a step of preparing a substrate, which is to be processed and has silicon exposed on the surface, a step of performing oxidizing to the silicon on the surface, and forming a silicon oxide thin film on the surface of the silicon, a step of performing first nitriding to the silicon oxide film and the base silicon thereof, and forming a silicon oxynitride film, and a step of performing first heat treatment to the silicon oxynitride film in N | 12-23-2010 |
20110143554 | REDUCTION OF DEFECTS FORMED ON THE SURFACE OF A SILICON OXYNITRIDE FILM - Methods for reducing defects on the surface of a silicon oxynitride film are disclosed, in one embodiment, the methods include, forming a silicon oxynitride film on a semiconductor substrate and heating the silicon oxynitride film to increase a hydrophilicity of a surface of the silicon oxynitride film prior to treating the surface of the silicon oxynitride film with a hydrofluoric acid. | 06-16-2011 |
20110151678 | NOVEL GAP FILL INTEGRATION - Novel gap fill schemes involving depositing both flowable oxide films and high density plasma chemical vapor deposition oxide (HDP oxide) films are provided. According to various embodiments, the flowable oxide films may be used as a sacrificial layer and/or as a material for bottom up gap fill. In certain embodiments, the top surface of the filled gap is an HDP oxide film. The resulting filled gap may be filled only with HDP oxide film or a combination of HDP oxide and flowable oxide films. The methods provide improved top hat reduction and avoid clipping of the structures defining the gaps. | 06-23-2011 |
20110189862 | SILICON OXYNITRIDE FILM AND PROCESS FOR PRODUCTION THEREOF, COMPUTER-READABLE STORAGE MEDIUM, AND PLASMA CVD DEVICE - Provided is a process of forming a silicon oxynitride film having concentration of hydrogen atoms below or equal to 9.9×10 | 08-04-2011 |
20110195582 | CVD Precursors - A method of producing silicon containing thin films by the thermal polymerization of a reactive gas mixture bisaminosilacyclobutane and source gas selected from a nitrogen providing gas, an oxygen providing gas and mixtures thereof. The films deposited may be silicon nitride, silicon carbonitride, silicon dioxide or carbon doped silicon dioxide. These films are useful as dielectrics, passivation coatings, barrier coatings, spacers, liners and/or stressors in semiconductor devices. | 08-11-2011 |
20110217851 | CONFORMAL LAYERS BY RADICAL-COMPONENT CVD - Methods, materials, and systems are described for forming conformal dielectric layers containing silicon and nitrogen (e.g., a silicon-nitrogen-hydrogen (Si—N—H) film) from a carbon-free silicon-and-nitrogen precursor and radical-nitrogen precursor. The carbon-free silicon-and-nitrogen precursor is predominantly excited by contact with the radical-nitrogen precursor. Because the silicon-and-nitrogen film is formed without carbon, the conversion of the film into hardened silicon oxide is done with less pore formation and less volume shrinkage. The deposited silicon-and-nitrogen-containing film may be wholly or partially converted to silicon oxide which allows the optical properties of the conformal dielectric layer to be selectable. The deposition of a thin silicon-and-nitrogen-containing film may be performed at low temperature to form a liner layer in a substrate trench. The low temperature liner layer has been found to improve the wetting properties and allows flowable films to more completely fill the trench. | 09-08-2011 |
20110312191 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device manufacturing method includes forming an insulation film containing silicon, oxygen and carbon over a semiconductor substrate by chemical vapor deposition; making UV cure on the insulation film being heated at a temperature of 350° C. or below after the forming the insulation film; and making helium plasma processing on the insulation film after the UV cure. | 12-22-2011 |
20120045904 | METHODS FOR FORMING A HYDROGEN FREE SILICON CONTAINING DIELECTRIC FILM - Embodiments of the disclosure generally provide methods of forming a hydrogen free silicon containing layer in TFT devices. The hydrogen free silicon containing layer may be used as a passivation layer, a gate dielectric layer, an etch stop layer, or other suitable layers in TFT devices, photodiodes, semiconductor diode, light-emitting diode (LED), or organic light-emitting diode (OLED), or other suitable display applications. In one embodiment, a method for forming a hydrogen free silicon containing layer in a thin film transistor includes supplying a gas mixture comprising a hydrogen free silicon containing gas and a reacting gas into a plasma enhanced chemical vapor deposition chamber, wherein the hydrogen free silicon containing gas is selected from a group consisting of SiF | 02-23-2012 |
20120045905 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS - Provided is a method of manufacturing a semiconductor device. The method includes: loading a substrate into a process vessel; performing a process to form an film on the substrate by alternately repeating: (a) forming a layer containing an element on the substrate by supplying at least two types of source gases into the process vessel, each of the at least two types of source gases containing the element, and (b) changing the layer containing the element by supplying reaction gas into the process vessel, the reaction gas being different from the at least two types of source gases; and unloading the processed substrate from the process vessel. | 02-23-2012 |
20120071005 | HEAT TREATING APPARATUS, HEAT TREATING METHOD AND STORAGE MEDIUM - A heat treating apparatus, which performs a specified heat treatment on a target object, includes a processing chamber accommodating therein the target object; a mounting table for mounting thereon the target object; a vacuum exhaust system for vacuum evacuating the processing chamber; an electromagnetic wave supply unit for irradiating an electromagnetic wave onto the target object to heat the target object; and a controller for controlling the heat treating apparatus such that the electromagnetic wave is irradiated onto the target object at a high vacuum level at which plasma is not generated. Further, a heat treating method performs a specified heat treatment on a target object, wherein the target object is accommodated in a processing chamber capable of being vacuum evacuated, and the target object is heated by irradiating an electromagnetic wave thereon at a high vacuum level at which plasma is not generated in the processing chamber. | 03-22-2012 |
20120100727 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, APPARATUS FOR MANUFACTURING SAME, AND STORAGE MEDIUM - A method of manufacturing a semiconductor device includes steps of: generating positively or negatively charged fine bubbles having substantially zero buoyancy in a coating solution as an insulating film forming material; coating the coating solution including the bubbles on a substrate to form a coating film; and baking the coating film by heating the substrate before the bubbles are removed to obtain a porous low dielectric constant insulating film. | 04-26-2012 |
20120156894 | MONOSILANE OR DISILANE DERIVATIVES AND METHOD FOR LOW TEMPERATURE DEPOSITION OF SILICON-CONTAINING FILMS USING THE SAME - This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <550° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least a silane or disilane derivative that is substituted with at least one alkylhydrazine functional groups and is free of halogen substitutes. | 06-21-2012 |
20120156895 | CHEMICAL VAPOR DEPOSITION PROCESS FOR ALUMINUM SILICON NITRIDE - A chemical vapor deposition method for forming an aluminum-silicon nitride layer upon a substrate uses an aluminum precursor, a silicon precursor and a nitrogen precursor under chemical vapor deposition conditions to deposit the aluminum-silicon nitride layer upon the substrate. The aluminum-silicon nitride layer has an index of refraction interposed between silicon nitride and aluminum nitride. The aluminum-silicon nitride layer also has a bandgap from about 4.5 to about 6 eV and a permittivity from about 6×10̂-11 to about 8×10̂-11 F/m. The aluminum-silicon nitride layer may be further thermally annealed to reduce a hydrogen content of the aluminum-silicon nitride layer. | 06-21-2012 |
20120164846 | Method of Forming Metal Oxide Hardmask - A method of forming a metal oxide hardmask on a template includes: providing a template constituted by a photoresist or amorphous carbon formed on a substrate; and depositing by atomic layer deposition (ALD) a metal oxide hardmask on the template constituted by a material having a formula Si | 06-28-2012 |
20120171874 | Plasma Enhanced Cyclic Chemical Vapor Deposition of Silicon- Containing Films - The present invention is a process of plasma enhanced cyclic chemical vapor deposition of silicon nitride, silicon carbonitride, silicon oxynitride, silicon carboxynitride, and carbon doped silicon oxide from alkylaminosilanes having Si—H | 07-05-2012 |
20120178267 | COMPOSITION AND METHOD FOR LOW TEMPERATURE DEPOSITION OF SILICON-CONTAINING FILMS SUCH AS FILMS INCLUDING SILICON, SILICON NITRIDE, SILICON DIOXIDE AND/OR SILICON-OXYNITRIDE - Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si | 07-12-2012 |
20120196450 | METHOD TO INCREASE SILICON NITRIDE TENSILE STRESS USING NITROGEN PLASMA IN-SITU TREATMENT AND EX-SITU UV CURE - Stress of a silicon nitride layer may be enhanced by deposition at higher temperatures. Employing an apparatus that allows heating of a substrate to substantially greater than 400° C. (for example a heater made from ceramic rather than aluminum), the silicon nitride film as-deposited may exhibit enhanced stress allowing for improved performance of the underlying MOS transistor device. In accordance with some embodiments, a deposited silicon nitride film is exposed to curing with plasma and ultraviolet (UV) radiation, thereby helping remove hydrogen from the film and increasing film stress. In accordance with other embodiments, a silicon nitride film is formed utilizing an integrated process employing a number of deposition/curing cycles to preserve integrity of the film at the sharp corner of the underlying raised feature. Adhesion between successive layers may be promoted by inclusion of a post-UV cure plasma treatment in each cycle. | 08-02-2012 |
20120214318 | Method of Depositing Dielectric Film by ALD Using Precursor Containing Silicon, Hydrocarbon, and Halogen - A method of forming a dielectric film having at least Si—N, Si—C, or Si—B bonds on a semiconductor substrate by atomic layer deposition (ALD), includes: adsorbing a precursor on a surface of a substrate; supplying a reactant gas over the surface; reacting the precursor and the reactant gas on the surface; and repeating the above steps to form a dielectric film having at least Si—N, Si—C, or Si—B bonds on the substrate. The precursor has at least one Si—C or Si—N bond, at least one hydrocarbon, and at least one halogen attached to silicon in its molecule. | 08-23-2012 |
20120225567 | PROCESS FOR WET PASSIVATION OF BOND PADS FOR PROTECTION AGAINST SUBSEQUENT TMAH-BASED PROCESSING - A process for forming a protective layer at a surface of an aluminum bond pad. The aluminum bond pad is exposed to a solution containing silicon, ammonium persulfate and tetramethylammonium hydroxide, which results in the formation of the protective layer. This protective layer protects the bond pad surface from corrosion during processing of an imager, such as during formation of a color filter array or a micro-lens array. | 09-06-2012 |
20120295449 | Method of Depositing Dielectric Film by ALD Using Precursor Containing Silicon, Hydrocarbon, and Halogen - A method of forming a dielectric film having at least Si—N, Si—C, or Si—B bonds on a semiconductor substrate by atomic layer deposition (ALD), includes: supplying a precursor in a pulse to adsorb the precursor on a surface of a substrate; supplying a reactant gas in a pulse over the surface without overlapping the supply of the precursor; reacting the precursor and the reactant gas on the surface; and repeating the above steps to form a dielectric film having at least Si—N, Si—C, or Si—B bonds on the substrate. The precursor has at least one Si—C or Si—N bond, at least one hydrocarbon, and at least two halogens attached to silicon in its molecule. | 11-22-2012 |
20130017690 | PLASMA NITRIDING METHOD AND PLASMA NITRIDING APPARATUSAANM Takatsuki; KoichiAACI YamanashiAACO JPAAGP Takatsuki; Koichi Yamanashi JPAANM Yamazaki; KazuyoshiAACI YamanashiAACO JPAAGP Yamazaki; Kazuyoshi Yamanashi JPAANM Noguchi; HideyukiAACI YamanashiAACO JPAAGP Noguchi; Hideyuki Yamanashi JPAANM Tamura; DaisukeAACI YamanashiAACO JPAAGP Tamura; Daisuke Yamanashi JPAANM Saito; TomohiroAACI YamanashiAACO JPAAGP Saito; Tomohiro Yamanashi JP - In a plasma nitriding method, a processing gas containing nitrogen gas and rare gas is introduced into a processing chamber of a plasma processing apparatus by setting a flow rate thereof as a total flow rate [mL/min(sccm)] of the processing gas per 1 L volume of the processing chamber within a range from 1.5 (mL/min)/L to 13 (mL/min)/L. Further, a nitriding process is performed on oxygen-containing films of target objects to be processed by generating a nitrogen-containing plasma in the processing chamber and while exchanging the target objects. | 01-17-2013 |
20130065404 | Carbosilane Precursors For Low Temperature Film Deposition - Provided are processes for the low temperature deposition of silicon-containing films using carbosilane precursors containing a carbon atom bridging at least two silicon atoms. Certain methods comprise providing a substrate; in a PECVD process, exposing the substrate surface to a carbosilane precursor containing at least one carbon atom bridging at least two silicon atoms; exposing the carbosilane precursor to a low-powered energy sourcedirect plasma to provide a carbosilane at the substrate surface; and densifying the carbosilanestripping away at least some of the hydrogen atoms to provide a film comprising SiC. The SiC film may be exposed to the carbosilane surface to a nitrogen source to provide a film comprising SiCN. | 03-14-2013 |
20130072031 | Apparatus and Methods for Low K Dielectric Layers - Methods and apparatus for a low k dielectric layer of porous SiCOH. A method includes placing a semiconductor substrate into a vapor deposition chamber; introducing reactive gases into the vapor deposition chamber to form a dielectric film comprising SiCOH and a decomposable porogen; depositing the dielectric film to have a ratio of Si—CH | 03-21-2013 |
20130189853 | Low Temperature Deposition of Silicon-Containing Films - This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition. | 07-25-2013 |
20130244448 | Precursors for CVD Silicon Carbo-Nitride Films - Classes of liquid aminosilanes have been found which allow for the production of silicon carbo-nitride films of the general formula Si | 09-19-2013 |
20130273748 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A method of manufacturing a semiconductor device is provided, including: forming an oxynitride film having a specific film thickness on a substrate by performing multiple numbers of times a cycle of: forming a specific element-containing layer on the substrate by supplying a source gas containing a specific element into a processing vessel in which the substrate is housed; changing the specific element-containing layer to a nitride layer by supplying a nitrogen-containing gas into the processing vessel; and changing the nitride layer to an oxynitride layer by supplying an oxygen-containing gas and an inert gas into the processing vessel, with this sequence as one cycle, wherein a composition ratio of the oxynitride film having the specific film thickness is controlled by controlling a partial pressure of the oxygen-containing gas in the processing vessel, in changing the nitride layer to the oxynitride layer. | 10-17-2013 |
20130330935 | REMOTE PLASMA BASED DEPOSITION OF SiOC CLASS OF FILMS - Provided are methods and systems for providing oxygen doped silicon carbide. A layer of oxygen doped silicon carbide can be provided under process conditions that employ silicon-containing precursors that have one or more silicon-hydrogen bonds and/or silicon-silicon bonds. The silicon-containing precursors also have one or more silicon-oxygen bonds and/or silicon-carbon bonds. One or more radical species in a substantially low energy state can react with the silicon-containing precursors to form the oxygen doped silicon carbide. The one or more radical species can be formed in a remote plasma source. | 12-12-2013 |
20130337660 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS - Provided: forming a specific element-containing layer by supplying a source gas to the substrate heated in a processing vessel, under a condition that a thermal decomposition reaction of the source gas is caused; changing the specific element-containing layer to a nitride layer by supplying a nitrogen-containing gas to the substrate; and changing the nitride layer to an oxynitride layer by supplying an oxygen-containing gas to the substrate, the source gas is sprayed in parallel to a surface of the substrate more strongly than a case of spraying the inert gas in parallel to the surface of the substrate in purging the inside of the processing vessel, by supplying an inert gas or a hydrogen-containing gas through the nozzle. | 12-19-2013 |
20140051264 | FLOWABLE FILMS USING ALTERNATIVE SILICON PRECURSORS - Methods of depositing initially flowable dielectric films on substrates are described. The methods include introducing silicon-containing precursor to a deposition chamber that contains the substrate. The methods further include generating at least one excited precursor, such as radical nitrogen or oxygen precursor, with a remote plasma system located outside the deposition chamber. The excited precursor is also introduced to the deposition chamber, where it reacts with the silicon-containing precursor in a reaction zone deposits the initially flowable film on the substrate. The flowable film may be treated in, for example, a steam environment to form a silicon oxide film. | 02-20-2014 |
20140065844 | Amino Vinylsilane Precursors for Stressed SiN Films - The present invention is a method to increase the intrinsic compressive stress in plasma enhanced chemical vapor deposition (PECVD) silicon nitride (SiN) and silicon carbonitride (SiCN) thin films, comprising depositing the film from an amino vinylsilane-based precursor. More specifically the present invention uses the amino vinylsilane-based precursor selected from the formula: [RR | 03-06-2014 |
20140094038 | ENHANCING ADHESION OF CAP LAYER FILMS - The present invention provides methods and apparatuses for improving adhesion of dielectric and conductive layers on a substrate to the underlying layer. The methods involve passing a process gas through a plasma generator downstream of the substrate to create reactive species. The underlying layer is then exposed to reactive species that interact with the film surface without undesirable sputtering. The gas is selected such that the interaction of the reactive species with the underlying layer modifies the surface of the layer in a manner that improves adhesion to the subsequently formed overlying layer. During exposure to the reactive species, the substrate and/or process gas may be exposed to ultraviolet radiation to enhance surface modification. In certain embodiments, a single UV cure tool is used to cure the underlying film and improve adhesion. | 04-03-2014 |
20140099796 | METHOD FOR DEVELOPING LOW DIELECTRIC CONSTANT FILM AND DEVICES OBTAINED THEREOF - A method for porogen removal of porous SiOCH film is provided, as well as devices obtained thereof. The devices and associated methods are in the field of advanced semiconductor interconnect technology, and more in particular in the development of dielectric films with low-k value. | 04-10-2014 |
20140242813 | Low K Precursors Providing Superior Integration Attributes - A deposition for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including one precursor of an organosilane or an organosiloxane, and a porogen distinct from the precursor, wherein the porogen is aromatic in nature; applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents to deposit a film, containing the porogen; and removing substantially all of the organic material by UV radiation to provide the porous film with pores and a dielectric constant less than 2.6. | 08-28-2014 |
20140256159 | CVD PRECURSORS - A method of producing silicon containing thin films by the thermal polymerization of a reactive gas mixture bisaminosilacyclobutane and source gas selected from a nitrogen providing gas, an oxygen providing gas and mixtures thereof. The films deposited may be silicon nitride, silicon carbonitride, silicon dioxide or carbon doped silicon dioxide. These films are useful as dielectrics, passivation coatings, barrier coatings, spacers, liners and/or stressors in semiconductor devices. | 09-11-2014 |
20140256160 | Apparatus for Manufacturing Semiconductor Device, Method of Manufacturing Semiconductor Device, and Recording Medium - An apparatus for manufacturing semiconductor devices is provided with a processing liquid supply part for supplying processing liquid into a processing chamber which houses a substrate, a heater part for heating the processing liquid in the processing chamber, and a substrate support part which is provided in the processing chamber and supports the substrate. | 09-11-2014 |
20140273526 | Atomic Layer Deposition Of Films Comprising Si(C)N Using Hydrazine, Azide And/Or Silyl Amine Derivatives - Provided are methods for the deposition of films comprising Si(C)N via atomic layer deposition processes. The methods include exposure of a substrate surface to a silicon precursor and a co-reagent comprising a compound selected from the group consisting of N═N═N—R, R | 09-18-2014 |
20140287596 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device including forming a thin film containing silicon, oxygen and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying a precursor gas containing silicon, carbon and a halogen element and having an Si—C bonding, and a first catalytic gas to the substrate; and supplying an oxidizing gas and a second catalytic gas to the substrate. | 09-25-2014 |
20140287597 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element, boron, carbon, and nitrogen and having a borazine ring skeleton on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a first precursor gas containing the predetermined element and a halogen group to the substrate; supplying a second precursor gas containing the predetermined element and an amino group to the substrate; supplying a reaction gas including an organic borazine compound to the substrate; and supplying a carbon-containing gas to the substrate. In addition, the cycle is performed under a condition in which the borazine ring skeleton in the organic borazine compound is maintained. | 09-25-2014 |
20140302688 | FLOWABLE SILICON-CARBON-OXYGEN LAYERS FOR SEMICONDUCTOR PROCESSING - Methods are described for forming a dielectric layer on a patterned substrate. The methods may include combining a silicon-and-carbon-containing precursor and a radical oxygen precursor in a plasma free substrate processing region within a chemical vapor deposition chamber. The silicon-and-carbon-containing precursor and the radical oxygen precursor react in to deposit a flowable silicon-carbon-oxygen layer on the patterned substrate. The resulting film possesses a low wet etch rate ratio relative to thermal silicon oxide and other standard dielectrics. | 10-09-2014 |
20140302689 | METHODS AND APPARATUS FOR DIELECTRIC DEPOSITION - Methods for depositing flowable dielectric films are provided. In some embodiments, the methods involve introducing a silicon-containing precursor to a deposition chamber wherein the precursor is characterized by having a partial pressure:vapor pressure ratio between 0.01 and 1. In some embodiments, the methods involve depositing a high density plasma dielectric film on a flowable dielectric film. The high density plasma dielectric film may fill a gap on a substrate. Also provided are apparatuses for performing the methods. | 10-09-2014 |
20140315393 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device includes: pre-treating a surface of a substrate by supplying an oxygen-containing gas and a hydrogen-containing gas to the substrate heated in a process chamber under a pressure less than atmospheric pressure; and forming a film on the pre-treated substrate by performing a cycle a predetermined number of times. The cycle includes: supplying a precursor gas to the substrate in the process chamber; and supplying a reaction gas to the substrate in the process chamber. | 10-23-2014 |
20140349492 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING APPARATUS AND RECORDING MEDIUM - A semiconductor device manufacturing method includes forming a thin film containing silicon, oxygen, carbon and a specified Group III or Group V element on a substrate by performing a cycle a predetermined number of times. The cycle includes: supplying a precursor gas containing silicon, carbon and a halogen element and having an Si—C bonding and a first catalytic gas to the substrate; supplying an oxidizing gas and a second catalytic gas to the substrate; and supplying a modifying gas containing the specified Group III or Group V element to the substrate. | 11-27-2014 |
20140363985 | Novel Amino-Silyl Amine Compound, Method for Preparing the Same and Silicon-Containing Thin-Film Using the Same - Provided are a novel amino-silyl amine compound, a method for preparing the same, and a silicon-containing thin-film using the same, wherein the amino-silyl amine compound has thermal stability and high volatility and is maintained in a liquid state at room temperature and under a pressure where handling is easy to thereby form a silicon-containing thin-film having high purity and excellent physical and electrical properties by various deposition methods. | 12-11-2014 |
20150072537 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device, includes: forming a thin film containing silicon, oxygen and carbon or a thin film containing silicon, oxygen, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a precursor gas serving as a silicon source and a carbon source or a precursor gas serving as a silicon source but no carbon source, and a first catalyst gas to the substrate; supplying an oxidizing gas and a second catalyst gas to the substrate; and supplying a modifying gas containing at least one selected from the group consisting of carbon and nitrogen to the substrate | 03-12-2015 |
20150111394 | MECHANISMS FOR FORMING UNIFORM FILM ON SEMICONDUCTOR SUBSTRATE - Embodiments of mechanisms for forming a film deposition tool are provided. The film deposition tool includes a plasma source and a substrate processing region connected to the plasma source. The film deposition tool also includes a pedestal for supporting a substrate in the substrate processing region, wherein the substrate is prepared to be deposited with a film. The film deposition tool further includes electrodes embedded in the pedestal and separated from each other. The film deposition tool also includes a direct current bias system having variable voltage sources. The variable voltage sources are electrically connected to the electrodes, respectively, for providing direct current voltages to the electrodes independently. | 04-23-2015 |
20150118865 | METHOD AND APPARATUS FOR FORMING SILICON OXYCARBONITRIDE FILM, SILICON OXYCARBIDE FILM AND SILICON OXYNITRIDE FILM - A method for forming a silicon oxycarbonitride film includes supplying a gas containing a silicon precursor having an oxygen-containing group onto a process surface of a workpiece, supplying a gas containing a carbon precursor onto the process surface, and supplying a nitriding gas onto the process surface subjected to the supplying a gas containing a silicon precursor and the supplying a gas containing a carbon precursor. The silicon oxycarbonitride film is formed on the process surface by the supplying the gas containing the silicon precursor, the supplying gas containing the carbon precursor and the supplying a nitriding gas without performing an oxidation process. | 04-30-2015 |
20150140839 | SUBSTRATE PROCESSING APPARATUS - Provided is a substrate processing apparatus, which comprises a process chamber configured to process a substrate, a first plasma generation chamber in the process chamber, a first reactive gas supply unit configured to supply first reactive gas into the first plasma generation chamber, a pair of first discharge electrodes configured to generate plasma and to excite the first reactive gas, a first gas ejection port installed in a side wall of the first plasma generation chamber to eject an active species toward the substrate, a second plasma generation chamber in the process chamber, a second reactive gas supply unit configured to supply second reactive gas into the second plasma generation chamber, a pair of second discharge electrodes configured to generate plasma and to excite the second reactive gas, and a second gas ejection port installed in a side wall of the second plasma generation chamber to eject an active species. | 05-21-2015 |
20150348778 | Film Forming Method of SiCN Film - A method of forming an SiCN film on a surface to be processed of an object, the method including: supplying an Si source gas containing an Si source into a processing chamber having the object accommodated therein; and supplying a gas containing a nitriding agent into the processing chamber after supplying the Si source gas, wherein a compound of nitrogen and carbon is used as the nitriding agent and wherein R | 12-03-2015 |
20160020089 | LOW-K DIELECTRIC GAPFILL BY FLOWABLE DEPOSITION - Methods are described for forming a flowable low-k dielectric layer on a patterned substrate. The film may be a silicon-carbon-oxygen (Si—C—O) layer in which the silicon and carbon constituents come from a silicon and carbon containing precursor while the oxygen may come from an oxygen-containing precursor activated in a remote plasma region. A similarly deposited silicon oxide layer may be deposited first to improve the gapfill capabilities. Alternatively, or in combination, the flow of a silicon-and-carbon-containing precursor may be reduced during deposition to change the properties from low-k to high strength roughly following the filling of features of the patterned substrate. | 01-21-2016 |
20160093488 | FLOWABLE LOW-K DIELECTRIC GAPFILL TREATMENT - Methods are described for forming a flowable low-k dielectric film on a patterned substrate. The film may be a silicon-carbon-oxygen (Si—C—O) layer in which the silicon and carbon constituents come from a silicon and carbon containing precursor while the oxygen may come from an oxygen-containing precursor activated in a remote plasma region. Shortly after deposition, the silicon-carbon-oxygen layer is treated by exposure to a hydrogen-and-nitrogen-containing precursor such as ammonia prior to curing. The treatment may remove residual moisture from the silicon-carbon-oxygen layer and may make the lattice more resilient during curing and subsequent processing. The treatment may reduce shrinkage of the silicon-carbon-oxygen layer during subsequent processing. | 03-31-2016 |
20160111319 | Retainer, Method For Producing Same And Use Thereof - A retainer has a coating composed of silicon carbide, glassy carbon or pyrolytic carbon on its surface. A method for producing the retainer and the use of the retainer in a plasma-driven vapor deposition are also provided. | 04-21-2016 |
20160126089 | FLOWABLE FILM CURING PENETRATION DEPTH IMPROVEMENT AND STRESS TUNING - Methods for depositing and curing a flowable dielectric layer are disclosed herein. Methods can include forming a flowable dielectric layer, immersing the flowable dielectric layer in an oxygen-containing gas, purging the chamber and curing the layer with UV radiation. By curing the layer after an oxygen-containing gas pre-soak, the layer can be more completely cured during the UV irradiation. | 05-05-2016 |
20160133460 | Atomic Layer Deposition Of Films Comprising Si(C)N Using Hydrazine, Azide And/Or Silyl Amine Derivatives - Provided are methods for the deposition of films comprising Si(C)N via atomic layer deposition processes. The methods include exposure of a substrate surface to a silicon precursor and a co-reagent comprising a compound selected from the group consisting of N═N═N—R, R | 05-12-2016 |
20160155627 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM | 06-02-2016 |
20180025907 | Deposition Of Flowable Silicon-Containing Films | 01-25-2018 |