Class / Patent application number | Description | Number of patent applications / Date published |
438775000 | Nitridation | 25 |
20080233763 | METHOD OF ACHIEVING UNIFORM LENGTH OF CARBON NANOTUBES (CNTS) AND METHOD OF MANUFACTURING FIELD EMISSION DEVICE (FED) USING SUCH CNTS - In a method of achieving uniform lengths of Carbon NanoTubes (CNTs) and a method of manufacturing a Field Emission Device (FED) using such CNTs, an organic film is coated to cover CNTs formed on a predetermined material layer. The organic film is etched to a predetermined depth to remove projected portions of the CNTs. After that, the organic film is removed. | 09-25-2008 |
20080242109 | METHOD FOR GROWING A THIN OXYNITRIDE FILM ON A SUBSTRATE - A method for growing an oxynitride film on a substrate includes positioning the substrate in a process chamber, heating the process chamber, flowing a wet process gas comprising water vapor and a nitriding gas comprising nitric oxide into the process chamber. The wet process gas and the nitriding gas form a processing ambient that reacts with the substrate such that an oxynitride film grows on the substrate. In yet another embodiment, the method further comprises flowing a diluting gas into the process chamber while flowing the wet process gas to control a growth rate of the oxynitride film. In another embodiment, the method further comprises annealing the substrate and the oxynitride film in an annealing gas. According to embodiments of the method where the substrate is silicon, a silicon oxynitride film forms that exhibits a nitrogen peak concentration of at least approximately 6 atomic % and an interface state density of less than approximately 1.5×10 | 10-02-2008 |
20140004713 | FILM FORMATION METHOD, FILM FORMATION APPARATUS AND STORAGE MEDIUM | 01-02-2014 |
20140080317 | MEHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - A stress of a film formed on a substrate can be reduced. A method of manufacturing a semiconductor device includes: forming a film on the substrate by supplying a process gas to the substrate while heating the substrate to a first temperature; controlling a stress to the film by changing a stress value of the film formed on the substrate, by supplying a plasma-excited process gas to the substrate while changing a temperature of the substrate to a second temperature different from the first temperature; and unloading the substrate from the processor chamber. | 03-20-2014 |
20140199854 | METHOD OF FORMING FILM ON DIFFERENT SURFACES - A method of forming a film is provided. The method includes at least the following steps. A first substrate and a second substrate are provided in a batch processing system, wherein a first surface of the first substrate is adjacent to a second surface of the second substrate, the first surface of the first substrate has a first surface condition, the second surface of the second substrate has a second surface condition, and the first surface condition is different from the second surface condition. A pretreatment gas is provided to the surfaces of the substrates for transforming the first surface condition and the second surface condition to a third surface condition. A reaction gas is provided to form the film on the surfaces, having the third surface condition, of the substrates. | 07-17-2014 |
20140220788 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - The present disclosure suppresses oxidation of a base film on a substrate surface during the formation of an oxide film. A method of manufacturing a semiconductor device according to the present disclosure includes forming an initial layer including a predetermined element and having a thickness of several atomic layers on a substrate in a process chamber by supplying a predetermined-element-containing gas to the substrate, and forming an oxide film including the predetermined element on the initial layer by performing a cycle a predetermined number of times, the cycle including supplying a precursor gas including the predetermined element to the substrate in the process chamber and supplying an oxygen-containing gas and a hydrogen-containing gas to the substrate heated in the process chamber under a pressure lower than an atmospheric pressure. | 08-07-2014 |
20160071724 | ENHANCING ELECTRICAL PROPERTY AND UV COMPATIBILITY OF ULTRATHIN BLOK BARRIER FILM - Embodiments described herein generally relate to the formation of a UV compatible barrier stack. Methods described herein can include delivering a process gas to a substrate positioned in a process chamber. The process gas can be activated to form an activated process gas, the activated process gas forming a barrier layer on a surface of the substrate, the barrier layer comprising silicon, carbon and nitrogen. The activated process gas can then be purged from the process chamber. An activated nitrogen-containing gas can be delivered to the barrier layer, the activated nitrogen-containing gas having a N | 03-10-2016 |
20160148806 | METHOD OF DEPOSITING AMMONIA FREE AND CHLORINE FREE CONFORMAL SILICON NITRIDE FILM - Provided herein are methods of depositing conformal silicon nitride films using atomic layer deposition by exposure to a halogen-free, N—H-bond-free, and carbon-free silicon-containing precursor such as disilane, purging of the precursor, exposure to a nitrogen plasma, and purging of the plasma at low temperatures. A high frequency plasma is used, such as a plasma having a frequency of at least 13.56 MHz or at least 27 MHz. Methods yield substantially pure conformal silicon nitride films suitable for deposition in semiconductor devices, such as in trenches or features, or for memory encapsulation. | 05-26-2016 |
438776000 | Using electromagnetic or wave energy | 17 |
20080200039 | NITRIDATION PROCESS - The invention is directed to a nitridation process for a wafer. The nitridation process comprises steps of disposing the wafer on a top surface of a chuck in a nitridation process tool, wherein a plurality of concentric pipe coils is disposed close to the bottom surface of the chuck. Then, the chuck is heated and the chuck is regionally cooling down by applying a coolant into the concentric pipe coils, wherein the flow rates of the coolant in the concentric pipe coils are different from each other. Furthermore, a plasma nitridation process is performed on the wafer. | 08-21-2008 |
20090124096 | METHOD OF FABRICATING FLASH MEMORY DEVICE - The present invention relates to a method of fabricating a flash memory device, the method of the present invention comprises the steps of forming a tunnel insulating layer on a semiconductor substrate through a plasma oxidation process and performing a nitridation treatment to a surface of the tunnel insulating layer. | 05-14-2009 |
20090269940 | METHOD FOR NITRIDING SUBSTRATE AND METHOD FOR FORMING INSULATING FILM - In a substrate nitriding method for nitriding a target substrate by allowing a nitrogen-containing plasma to act on silicon on a surface of the substrate in a processing chamber of a plasma processing apparatus, the nitridation by the nitrogen-containing plasma is performed by controlling a sheath voltage V | 10-29-2009 |
20100124825 | BARRIER METAL FILM PRODUCTION APPARATUS, BARRIER METAL FILM PRODUCTION METHOD, METAL FILM PRODUCTION METHOD, AND METAL FILM PRODUCTION APPARATUS | 05-20-2010 |
20110124202 | PLASMA PROCESSING METHOD AND COMPUTER STORAGE MEDIUM - According to the present invention, when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to form an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently, it is possible to improve quality of the oxynitride film, resulting in a reduced leakage current, an improved operating speed, and improved NBTI resistance. | 05-26-2011 |
20110256734 | SILICON NITRIDE FILMS AND METHODS - Described are methods of making SiN materials on substrates, particularly SiN thin films on semiconductor substrates. Improved SiN films made by the methods are also included. | 10-20-2011 |
20110318940 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, AND SUBSTRATE PROCESSING APPARATUS - A method of manufacturing a semiconductor device includes forming a layer containing a predetermined element on a substrate by supplying a source gas containing the predetermined element into a process vessel and exhausting the source gas from the process vessel to cause a chemical vapor deposition (CVD) reaction. A nitrogen-containing gas is supplied into the process vessel and then exhausted, changing the layer containing the predetermined element into a nitride layer. This process is repeated to form a nitride film on the substrate. The process vessel is purged by supplying an inert gas into the process vessel and exhausting the inert gas from the process vessel between forming the layer containing the predetermined element and changing the layer containing the predetermined element into the nitride layer. | 12-29-2011 |
20120184111 | SELECTIVE PLASMA NITRIDING METHOD AND PLASMA NITRIDING APPARATUS - A selective plasma nitriding method includes mounting an object to be processed on a mounting table in a processing chamber of a plasma processing apparatus, the object having a silicon surface and a silicon compound layer exposed; setting a pressure in the processing chamber within the range of about 66.7 Pa to 667 Pa; and generating a nitrogen-containing plasma while applying a bias voltage to the object by supplying to the mounting table a high frequency power with an output of about 0.1 W/cm | 07-19-2012 |
20130072028 | PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING METAL OXIDE SEMICONDUCTOR DEVICE - A process for fabricating a semiconductor device is described. A silicon oxide layer is formed. A nitridation process including at least two steps is performed to nitridate the silicon oxide layer into a silicon oxynitride (SiON) layer. The nitridation process comprises a first nitridation step and a second nitridation step in sequence, wherein the first nitridation step and the second nitridation step are different in the setting of at least one parameter. | 03-21-2013 |
20130171837 | SEMICONDUCTOR PROCESS - A semiconductor process includes the following steps. A substrate having a recess is provided. A decoupled plasma nitridation process is performed to nitride the surface of the recess for forming a nitrogen containing liner on the surface of the recess. A nitrogen containing annealing process is then performed on the nitrogen containing liner. | 07-04-2013 |
20130196516 | METHODS FOR UV-ASSISTED CONFORMAL FILM DEPOSITION - Described are methods of making silicon nitride (SiN) materials and other silicon-containing films, including carbon-containing and/or oxygen-containing films such as SiCN (also referred to as SiNC), SiON and SiONC films, on substrates. According to various embodiments, the methods involve electromagnetic radiation-assisted activation of one or more reactants. In certain embodiments, for example, the methods involve ultraviolet (UV) activation of vapor phase amine coreactants. The methods can be used to deposit silicon-containing films, including SiN and SiCN films, at temperatures below about 400° C. | 08-01-2013 |
20140051262 | METHODS FOR UV-ASSISTED CONFORMAL FILM DEPOSITION - Described are methods of making silicon nitride (SiN) materials and other silicon-containing films, including carbon-containing and/or oxygen-containing films such as SiCN (also referred to as SiNC), SiON and SiONC films, on substrates. According to various embodiments, the methods involve electromagnetic radiation-assisted activation of one or more reactants. In certain embodiments, for example, the methods involve ultraviolet (UV) activation of vapor phase amine coreactants. The methods can be used to deposit silicon-containing films, including SiN and SiCN films, at temperatures below about 400° C. | 02-20-2014 |
20140273518 | METHODS FOR FORMING LAYERS ON SEMICONDUCTOR SUBSTRATES - Methods of forming a layer on a substrate may include providing a substrate to a process chamber, the process chamber having a gas port, an exhaust, and a plasma port disposed between the gas port and the exhaust; providing a process gas from the gas port in a first direction such that the process gas flows across the substrate; providing a plasma such that a flow of the plasma interacts with a flow of the process gas at an angle that is non-perpendicular; and rotating the substrate while providing the process gas and the plasma, wherein a thickness profile of the layer is controlled by adjusting at least one of a flow velocity of the process gas, a flow velocity of the plasma, the angle the flow of the plasma interacts with the flow of the process gas, or a direction of rotation of the substrate. | 09-18-2014 |
20140295676 | METHOD OF OPERATING VERTICAL HEAT TREATMENT APPARATUS, VERTICAL HEAT TREATMENT APPARATUS AND NON-TRANSITORY RECORDING MEDIUM - A method of operating vertical heat treatment apparatus includes: cleaning interior of vertical reaction chamber by supplying cleaning gas; pre-coating the interior of the reaction chamber by performing, a plurality of times, a cycle including alternately supplying the first gas and supplying the second gas while generating plasma from the second gas; eliminating charges by loading substrate holding unit holding a dummy semiconductor substrate or a conductive substrate into the reaction chamber and supplying the second gas while generating plasma from the second gas without supplying the first gas; loading the substrate holding unit holding a plurality of product semiconductor substrates into the reaction chamber; and forming thin film in the reaction chamber by performing, a plurality of times, a cycle including alternately supplying the first gas and supplying the second gas while generating plasma from the second gas. | 10-02-2014 |
438777000 | Microwave gas energizing | 3 |
20090104787 | PLASMA NITRIDING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND PLASMA PROCESSING APPARATUS - A nitriding process is performed at a process temperature of 500° C. or more by causing microwave-excited high-density plasma of a nitrogen-containing gas to act on silicon in the surface of a target object, inside a process container of a plasma processing apparatus. The plasma is generated by supplying microwaves into the process container from a planar antenna having a plurality of slots. | 04-23-2009 |
20100323529 | METHOD FOR FORMING INSULATING FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for forming an insulating film includes a step of preparing a substrate, which is to be processed and has silicon exposed on the surface; a step of performing first nitriding to the silicon exposed on the surface of the substrate, and forming a silicon nitride film having a thickness of 0.2 nm but not more than 1 nm on the surface of the substrate; and a step of performing first heat treatment to the silicon nitride film in N | 12-23-2010 |
20120164845 | DUAL ZONE GAS INJECTION NOZZLE - The present invention generally provides apparatus and method for processing a substrate. Particularly, the present invention provides apparatus and methods to obtain a desired distribution of a process gas. One embodiment of the present invention provides an apparatus for processing a substrate comprising an injection nozzle having a first fluid path including a first inlet configured to receive a fluid input, and a plurality of first injection ports connected with the first inlet, wherein the plurality of first injection ports are configured to direct a fluid from the first inlet towards a first region of a process volume, and a second fluid path including a second inlet configured to receive a fluid input, and a plurality of second injection ports connected with the second inlet, wherein the second injection ports are configured to direct a fluid from the second inlet towards a second region of the process volume. | 06-28-2012 |