Entries |
Document | Title | Date |
20080274624 | METHOD FOR DEPOSITING TITANIUM NITRIDE FILMS FOR SEMICONDUCTOR MANUFACTURING - Embodiments of the invention describe TiN deposition methods suitable for high volume manufacturing of semiconductor devices on large patterned substrates (wafers). One embodiment describes a chemical vapor deposition (CVD) process using high gas flow rate of a tetrakis(ethylmethylamino)titanium (TEMAT) precursor vapor along with an inert carrier gas at a low process chamber pressure that provides high deposition rate of conformal TiN films with good step coverage in surface reaction limited regime. Other embodiments describe cyclical TiN deposition methods using TEMAT precursor vapor and a nitrogen precursor. | 11-06-2008 |
20090029563 | METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR NANOPARTICLES - A method for producing semiconductor nanoparticles, wherein a reaction for forming nuclei of the semiconductor nanoparticles and a reaction for growing the nuclei of the semiconductor nanoparticles are performed in a stepwise manner. An apparatus for producing semiconductor nanoparticles includes a continuous reaction apparatus for performing a reaction for forming nuclei of semiconductor nanoparticles and a batch reaction apparatus for performing a reaction for growing the semiconductor nanoparticles. | 01-29-2009 |
20090035947 | Manufacturing Method of Semiconductor Device, and Substrate Processing Apparatus - The present invention provides a manufacturing method of a semiconductor device that has a rapid film formation rate and high productivity, and to provide a substrate processing apparatus. | 02-05-2009 |
20090081883 | PROCESS FOR DEPOSITING ORGANIC MATERIALS - A process of making an organic thin film on a substrate by atomic layer deposition is disclosed, the process comprising simultaneously directing a series of gas flows along substantially parallel elongated channels, and wherein the series of gas flows comprises, in order, at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, optionally repeated a plurality of times, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material wherein the first reactive gaseous material, the second reactive gaseous material or both is a volatile organic compound. The process is carried out substantially at or above atmospheric pressure and at a temperature under 250° C., during deposition of the organic thin film. | 03-26-2009 |
20090130858 | DEPOSITION SYSTEM AND METHOD USING A DELIVERY HEAD SEPARATED FROM A SUBSTRATE BY GAS PRESSURE - A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film deposition system toward the surface of a substrate, and wherein the series of gas flows comprises at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material, wherein one or more of the gas flows provides a pressure that at least contributes to the separation of the surface of the substrate from the face of the delivery head. A system capable of carrying out such a process is also disclosed. | 05-21-2009 |
20090170339 | REDUCING THE CREATION OF CHARGE TRAPS AT GATE DIELECTRICS IN MOS TRANSISTORS BY PERFORMING A HYDROGEN TREATMENT - By performing a heat treatment on the basis of a hydrogen ambient, exposed silicon-containing surface portions may be reorganized prior to the formation of gate dielectric materials. Hence, the interface quality and the material characteristics of the gate dielectrics may be improved, thereby reducing negative bias temperature instability effects in highly scaled P-channel transistors. | 07-02-2009 |
20090258506 | Substrate Processing Method and Substrate Processing Apparatus - Substrate contamination from tungsten is prevented. | 10-15-2009 |
20090263977 | SELECTIVE FUNCTIONALIZATION OF DOPED GROUP IV SURFACES USING LEWIS ACID/LEWIS BASE INTERACTION - A method of selectively attaching a capping agent to a Group IV semiconductor surface is disclosed. The method includes providing the Group IV semiconductor surface, the Group IV semiconductor surface including a set of covalently bonded Group IV semiconductor atoms and a set of surface boron atoms. The method also includes exposing the set of boron atoms to a set of capping agents, each capping agent of the set of capping agents having a central atom and a set of functional groups, wherein the central atom includes at least a lone pair of electrons; wherein a complex is formed between at least some surface boron atoms of the set of surface boron atoms and the central atom of at least some capping agents of the set of capping agents. | 10-22-2009 |
20090280652 | PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times. | 11-12-2009 |
20090280653 | METHOD FOR FORMING LOW DIELECTRIC CONSTANT FLUORINE-DOPED LAYERS - A method for forming a semiconductor device is provided. In one embodiment, the method includes providing a semiconductor substrate with a surface region. The surface region includes one or more layers overlying the semiconductor substrate. In addition, the method includes depositing a dielectric layer overlying the surface region. The dielectric layer is formed by a CVD process. Furthermore, the method includes forming a diffusion barrier layer overlying the dielectric layer. In addition, the method includes forming a conductive layer overlying the diffusion barrier layer. Additionally, the method includes reducing the thickness of the conductive layer using a chemical-mechanical polishing process. The CVD process utilizes fluorine as a reactant to form the dielectric layer. In addition, the dielectric layer is associated with a dielectric constant equal or less than 3.3. | 11-12-2009 |
20090311875 | SELECTIVE ACTIVATION OF HYDROGEN PASSIVATED SILICON AND GERMANIUM SURFACES - A method of selectively attaching a capping agent to an H-passivated Si or Ge surface is disclosed. The method includes providing the H-passivated Si or Ge surface, the H-passivated Si or Ge surface including a set of covalently bonded Si or Ge atoms and a set of surface substitutional atoms, wherein the set of surface substitutional atoms includes at least one of boron atoms, aluminum atoms, gallium atoms, indium atoms, tin atoms, lead atoms, phosphorus atoms, arsenic atoms, sulfur atoms, and bismuth atoms. The method also includes exposing the set of surface functional atoms to a set of capping agents, each capping agent of the set of capping agents having a set of functional groups bonded to a pair of carbon atoms, wherein the pair of carbon atoms includes at least one pi orbital bond, and further wherein a covalent bond is formed between at least some surface substitutional atoms of the set of surface substitutional atoms and at least some capping agents of the set of capping agents. | 12-17-2009 |
20090311876 | Manufacturing method of semiconductor device and substrate processing apparatus - A manufacturing method of a semiconductor device, including the steps of: loading into a processing chamber a substrate having a high dielectric gate insulating film and a metal electrode, with a side wall exposed by etching; applying oxidation processing to the substrate by supplying thereto hydrogen-containing gas and oxygen-containing gas excited by plasma, with the substrate heated to a temperature not allowing the high dielectric gate insulating film to be crystallized, in the processing chamber; and unloading the substrate after processing from the processing chamber. | 12-17-2009 |
20100035440 | SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A substrate processing apparatus includes: a reaction tube configured to process a plurality of substrates; a heater configured to heat the inside of the reaction tube; a holder configured to arrange and hold the plurality of substrates within the reaction tube; a first nozzle disposed in an area corresponding to a substrate arrangement area where the plurality of substrates are arranged, and configured to supply hydrogen-containing gas from a plurality of locations of the area into the reaction tube; a second nozzle disposed in the area corresponding to the substrate arrangement area, and configured to supply oxygen-containing gas from a plurality of locations of the area into the reaction tube; an exhaust outlet configured to exhaust the inside of the reaction tube; and a pressure controller configured to control pressure inside the reaction tube to be lower than atmospheric pressure, wherein the first nozzle is provided with a plurality of first gas ejection holes, and the second nozzle is provided with as many second gas ejection holes as at least the plurality of substrates so that the second gas ejection holes correspond to at least the respective substrates. | 02-11-2010 |
20100093184 | Method for making a metal oxide layer - A method for making a metal oxide layer includes: (a) exposing a substrate having oxygen-containing reaction sites to an environment of a first precursor of an organometallic compound, which contains a metal atom and ligand groups, so as to form a chemisorption layer of the first precursor on the substrate; (b) exposing the chemisorption layer on the substrate to a non-free radical environment of a second precursor after step (a) so as to remove the ligand groups of the chemisorption layer that are unreacted in step (a) and so as to convert the chemisorption layer into a metal oxide layer; and (c) after step (b), exposing the metal oxide layer on the substrate to a free radical-containing gas containing free radicals so as to remove the ligand groups of the chemisorption layer that are left unreacted in step (b). | 04-15-2010 |
20100099269 | SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME - Provided are a semiconductor device and a method of forming the same. The method may include forming a gate dielectric layer including a plurality of elements on a substrate; supplying a specific element to the gate dielectric layer; forming a product though reacting the specific element with at least one of the plurality of elements; and removing the product. | 04-22-2010 |
20100099270 | ATOMIC LAYER DEPOSITION APPARATUS - A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber. | 04-22-2010 |
20100240224 | MULTI-ZONE SEMICONDUCTOR FURNACE - A semiconductor furnace suitable for chemical vapor deposition processing of wafers. The furnace includes a thermal reaction chamber having a top, a bottom, a sidewall, and an internal cavity for removably holding a batch of vertically stacked wafers. A heating system is provided that includes a plurality of heaters arranged and operative to heat the chamber. The heating system includes at least one top heater; at least one bottom heater, and a plurality of sidewall heaters spaced along the height of the reaction chamber to control temperature variations within in the chamber and promote uniform film deposit thickness on the wafers. | 09-23-2010 |
20100267247 | Dual Frequency Low Temperature Oxidation of a Semiconductor Device - Methods and apparatus for forming an oxide layer on a semiconductor substrate are disclosed. A two frequency plasma source is used to form a plasma in a plasma reactor. In various embodiments, different quantities of power are supplied to a power source operating at the first frequency and a power source operating at the second frequency over time. | 10-21-2010 |
20110053383 | HIGH CONCENTRATION WATER PULSES FOR ATOMIC LAYER DEPOSITION - Methods are provided herein for forming thin films comprising oxygen by atomic layer deposition. The thin films comprising oxygen can be deposited by providing higher concentration water pulses, a higher partial pressure of water in the reaction space, and/or a higher flow rate of water to a substrate in a reaction space. Thin films comprising oxygen can be used, for example, as dielectric oxides in transistors, capacitors, integrated circuits, and other semiconductor applications. | 03-03-2011 |
20110092078 | SELECTIVE FUNCTIONALIZATION OF DOPED GROUP IV NANOPARTICLE SURFACES USING LEWIS ACID/LEWIS BASE INTERACTION - A method of selectively attaching a capping agent to a Group IV semiconductor surface is disclosed. The method includes providing the Group IV semiconductor surface, the Group IV semiconductor surface including a set of covalently bonded Group IV semiconductor atoms and a set of surface boron atoms. The method also includes exposing the set of boron atoms to a set of capping agents, each capping agent of the set of capping agents having a central atom and a set of functional groups, wherein the central atom includes at least a lone pair of electrons; wherein a complex is formed between at least some surface boron atoms of the set of surface boron atoms and the central atom of at least some capping agents of the set of capping agents. | 04-21-2011 |
20120009801 | METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE - In a silicon carbide MOSFET, interface state generated at an interface between a silicon carbide layer and a gate insulating film cannot be reduced sufficiently, and mobility of a carrier is decreased. To solve this problem, a silicon carbide semiconductor device according to this invention includes a substrate introduction step of introducing a substrate, which includes a silicon carbide layer on which a gate insulating film is formed, in a furnace, and a heating step of heating the furnace having the substrate introduced therein while introducing nitrogen monoxide and nitrogen therein, wherein, in the heating step, nitrogen is reacted to nitride an interface between the gate insulating film and the silicon carbide layer. | 01-12-2012 |
20120034790 | METHOD OF PRODUCING SEMICONDUCTOR DEVICE - Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times. | 02-09-2012 |
20120077350 | METHOD OF PRODUCING SEMICONDUCTOR DEVICE - Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times. | 03-29-2012 |
20120122319 | COATING METHOD FOR COATING REACTION TUBE PRIOR TO FILM FORMING PROCESS - Contamination of a substrate can be prevented or suppressed. A substrate processing apparatus includes a reaction tube having an inner space divided by a barrier wall into a film forming space and a plasma generating space. When a desired film is formed on a substrate placed inside the reaction tube, first and second processing gases are supplied to the reaction tube through nozzles. On the other hand, when a part of the reaction tube constituting the plasma generating space is coated with a film, second and third processing gases are supplied to the plasma generating space through the nozzle. | 05-17-2012 |
20120178264 | METHOD AND APPARATUS FOR FORMING SILICON NITRIDE FILM - A method of forming a silicon nitride film on the surface of an object to be processed, the method including forming a seed layer functioning as a seed of the silicon nitride film on the surface of the object to be processed by using at least an aminosilane-based gas, prior to forming the silicon nitride film on the surface of the object to be processed. | 07-12-2012 |
20120202355 | PATTERNED DUMMY WAFERS LOADING IN BATCH TYPE CVD - A method for semiconductor device fabrication is provided. Embodiments of the present invention are directed towards using at least one patterned dummy wafer along with one or more product wafers in a film deposition system to create a sidewall layer thickness variation that is substantially uniform across all product wafers. The at least one patterned dummy wafer may have a high density patterned substrate surface with a topography that is different from or substantially similar to a topography of the one or more product wafers. Furthermore, in a batch type Chemical Vapor Deposition (CVD) system, the at least one patterned dummy wafer may be placed near a gas inlet of the CVD system. In another embodiment, at least one patterned dummy wafer may be placed near an exhaust of the CVD system. Additionally, the patterned dummy wafers may be reusable in subsequent film deposition processes. | 08-09-2012 |
20120220137 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD OF PROCESSING SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS - In a low-temperature, a silicon nitride film having a low in-film chlorine (Cl) content and a high resistance to hydrogen fluoride (HF) is formed. The formation of the silicon nitride film includes (a) supplying a monochlorosilane (SiH | 08-30-2012 |
20120225566 | SUBSTRATE PROCESSING APPARATUS AND A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - The temperature of a substrate is elevated rapidly while improving the temperature uniformity of the substrate. The substrate is loaded into a process chamber, the loaded substrate is supported on a first substrate support unit, a gas is supplied to the process chamber, the temperature of the substrate supported on the first substrate support unit is elevated in a state of increasing the pressure in the process chamber to higher than the pressure during loading of the substrate or in a state of increasing the pressure in the process chamber to higher than the pressure during processing for the surface of the substrate, the substrate supported on the first substrate support unit is transferred to the second substrate support unit and supported thereon after lapse of a predetermined time, and the surface of substrate is processed while heating the substrate supported on the second substrate support unit. | 09-06-2012 |
20120238108 | TWO-STAGE OZONE CURE FOR DIELECTRIC FILMS - A method of forming a silicon oxide layer is described. The method increases the oxygen content of a dielectric layer by curing the layer in a two-step ozone cure. The first step involves exposing the dielectric layer to ozone while the second step involves exposing the dielectric layer to ozone excited by a local plasma. This sequence can reduce or eliminate the need for a subsequent anneal following the cure step. The two-step ozone cures may be applied to silicon-and-nitrogen-containing film to convert the films to silicon oxide. | 09-20-2012 |
20120252225 | SEMICONDUCTOR FABRICATION METHOD - A semiconductor fabrication method is provided, in which a protective layer is deposited on the dummy wafer such that the protective layer fully encases the dummy wafer. Therefore, the dummy wafer will not be oxidized during thermal oxidation, thereby reducing dummy wafer consumption, decreasing production cost, avoiding particulate matter produced due to oxidation of the dummy wafer, and preventing the wafer to be oxidized from contamination. | 10-04-2012 |
20120322273 | COATING FILM FORMING METHOD AND COATING FILM FORMING APPARATUS - A coating film forming method according to an embodiment, includes rotating a substrate, supplying a chemical solution for forming a coating film onto the rotating substrate, and supplying a liquid having a lower temperature than an atmosphere of the substrate to an edge of the substrate from a back side of the substrate while a film is formed by supplying the chemical solution onto the rotating substrate. | 12-20-2012 |
20130012032 | NH3 CONTAINING PLASMA NITRIDATION OF A LAYER ON A SUBSTRATE - Methods and apparatus for forming nitrogen-containing layers are provided herein. In some embodiments, a method includes exposing a first layer of a substrate to a plasma formed from a process gas comprising predominantly a mixture of ammonia (NH | 01-10-2013 |
20130084714 | Method for Forming Single-Phase Multi-Element Film by PEALD - A method for forming a single-phase multi-element film on a substrate in a reaction zone by PEALD repeating a single deposition cycle. The single deposition cycle includes: adsorbing a precursor on the substrate in the absence of reactant and plasma; decomposing the precursor adsorbed on the substrate by an inert gas plasma; and reacting the decomposed precursor with a reactant gas plasma in the presence of the inert gas plasma. The multi-element film contains silicon and at least two non-metal elements constituting a matrix of the film, the precursor contains silicon and optionally at least one non-metal element to be incorporated in the matrix, and the reactant gas contains at least one non-metal element to be incorporated in the matrix. | 04-04-2013 |
20130130512 | FILM DEPOSITION METHOD AND FILM DEPOSITION APPARATUS - A film deposition method including: a step of carrying a substrate into a vacuum chamber, and placing the substrate on a turntable; a step of rotating the turntable; and an adsorption-formation-irradiation step of supplying a first reaction gas to the substrate from a first reaction gas supply part to adsorb the first reaction gas on the substrate; supplying a second reaction gas from a second reaction gas supply part so that the first reaction gas adsorbed on the substrate reacts with the second reaction gas so as to form a reaction product on the substrate; and supplying a hydrogen containing gas to a plasma generation part that is separated from the first reaction gas supply part and the second reaction gas supply part in a circumferential direction of the turntable so as to generate plasma above the turntable and to irradiate the plasma to the reaction product. | 05-23-2013 |
20130143415 | Multi-Component Film Deposition - Provided are atomic layer deposition apparatus and methods including a gas distribution plate comprising a plurality of elongate gas ports including at least one first reactive gas port in fluid communication with a first reactive gas and at least one second reactive gas port in fluid communication with a gas manifold. The gas manifold is in fluid communication with at least a second reactive gas different from the first reactive gas and a purge gas. Also provided are atomic layer deposition apparatus and methods including linear energy sources in one or more of region before the gas distribution plate and a region after the gas distribution plate. | 06-06-2013 |
20130224964 | Method for Forming Dielectric Film Containing Si-C bonds by Atomic Layer Deposition Using Precursor Containing Si-C-Si bond - A method of forming a dielectric film having Si—C bonds on a semiconductor substrate by atomic layer deposition (ALD), includes: (i) adsorbing a precursor on a surface of a substrate; (ii) reacting the adsorbed precursor and a reactant gas on the surface; and (iii) repeating steps (i) and (ii) to form a dielectric film having at least Si—C bonds on the substrate. The precursor has a Si—C—Si bond in its molecule, and the reactant gas is oxygen-free and halogen-free and is constituted by at least a rare gas. | 08-29-2013 |
20130316544 | METHOD FOR REPLACING CHLORINE ATOMS ON A FILM LAYER - The present invention discloses a method for replacing chlorine atoms on a film layer. More particularly, sufficient replacement ions for replacing the chlorine atoms are formed in a plasma process by reducing a volume ratio of a gas in a gas mixture (i.e. the film layer may be etched with the ions formed by dissociation of the gas) and dissociation of the gas mixture further decreases the etching reaction to the film layer in a process for replacing the chlorine atoms. In comparison to a conventional process by pure oxygen, the present invention can improve the prior art re-etching problem to avoid affecting an electric property of a thin film transistor, also has an advantage of manufacturing time reduction for an increased production yield. | 11-28-2013 |
20140073143 | Process Gas Management for an Inductively-Coupled Plasma Deposition Reactor - Embodiments related to hardware and methods for processing a semiconductor substrate are disclosed. One example film deposition reactor includes a process gas distributor including a plasma gas-feed inlet located to supply plasma gas to a plasma generation region within the film deposition reactor and a precursor gas-feed inlet located to supply film precursor gas downstream of the plasma generation region; an insulating confinement vessel configured to maintain a plasma generation region at a reduced pressure within the film deposition reactor and an inductively-coupled plasma (ICP) coil arranged around a portion of a sidewall of the insulating confinement vessel and positioned so that the sidewall separates the plasma generation region from the ICP coil; and a susceptor configured to support the semiconductor substrate so that a film deposition surface of the semiconductor substrate is exposed to a reaction region formed downstream of the process gas distributor. | 03-13-2014 |
20140120737 | SUB-SATURATED ATOMIC LAYER DEPOSITION AND CONFORMAL FILM DEPOSITION - Methods and apparatus for depositing continuous thin films using plasma-activated sub-saturated atomic layer deposition are provided herein. According to various embodiments, pin-hole free continuous films may be deposited at thicknesses thinner than achievable with conventional methods. The methods and apparatus also provide high degree of thickness control, with films a per-cycle thickness tunable to as low as 0.1 Å in some embodiments. Further, the methods and apparatus may be used to provide films having improved properties, such as lower wet etch rate, in some embodiments. | 05-01-2014 |
20140134850 | METHOD FOR MANUFACTURING OXIDE LAYER - Disclosed a method for manufacturing an oxide layer, applicable to a manufacture procedure of a field oxide layer of a CMOS transistor in the field of semiconductor manufacturing, the method includes: injecting a first gas satisfying a first predetermined condition into a processing furnace in which a first CMOS transistor semi-finished product formed with an N-well and a P-well is placed, and dry-oxidizing the first CMOS transistor semi-finished product into a second CMOS transistor semi-finished product; and injecting a second gas satisfying a second predetermined condition different from the first predetermined condition into the processing furnace, and wet-oxidizing the second CMOS transistor semi-finished product into a third CMOS transistor semi-finished product. | 05-15-2014 |
20140213068 | FILM DEPOSITION APPARATUS AND FILM DEPOSITION METHOD - A film deposition apparatus includes a separation member that extends to cover a rotation center of the turntable and two different points on a circumference of the turntable above the turntable, thereby separating the inside of the chamber into a first area and a second area; a first reaction gas supplying portion that supplies a first reaction gas toward the turntable in the first area; a second reaction gas supplying portion that supplies a second reaction gas toward the turntable in the second area; a first evacuation port that evacuates the first reaction gas and the first separation gas that converges with the first reaction gas; and a second evacuation port that evacuates the second reaction gas and the first separation gas that converges with the second reaction gas. The separation member has a bent portion that substantially fills in a gap between the turntable and the chamber. | 07-31-2014 |
20140273516 | VBD AND TDDB IMPROVEMENT THRU INTERFACE ENGINEERING - Methods for the repair of damaged low k films are provided. In one embodiment, the method comprises providing a substrate having a low k dielectric film deposited thereon, and exposing a surface of the low k dielectric film to an activated carbon-containing precursor gas to form a conformal carbon-containing film on the surface of the low k dielectric film, wherein the carbon-containing precursor gas has at least one or more Si—N—Si linkages in the molecular structure. | 09-18-2014 |
20150087159 | SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER READABLE RECORDING MEDIUM - Provided is a technique of efficiently purging source gases remaining on a substrate and improving in-plane uniformity of a substrate. A method of processing a substrate includes forming a thin film on a substrate accommodated in a process chamber by (a) supplying a source gas into the process chamber, and (b) supplying an inert gas into the process chamber while alternately increasing and decreasing a flow rate of the inert gas supplied into the process chamber and exhausting the source gas and the inert gas from the process chamber. | 03-26-2015 |
20150318183 | SUBSTRATE LIQUID PROCESSING APPARATUS AND SUBSTRATE LIQUID PROCESSING METHOD - Disclosed is a substrate liquid processing apparatus. The substrate liquid processing apparatus includes a processing unit, a nozzle, a silylation liquid supply mechanism, and a blocking fluid supply mechanism. The processing unit performs a water repellency imparting processing on a substrate by supplying a silylation liquid to the substrate. The nozzle includes an ejection port configured to supply the silylation liquid to the substrate positioned in the processing unit, and a silylation liquid flow path in which the silylation liquid flows toward the ejection port. The silylation liquid supply mechanism supplies the silylation liquid to the silylation liquid flow path in the nozzle through a silylation liquid supply line. The blocking fluid supply mechanism supplies a blocking fluid that blocks the silylation liquid within the silylation liquid flow path in the nozzle from an atmosphere outside the ejection port. | 11-05-2015 |
20150318466 | OXIDATION PROCESS APPARATUS, OXIDATION METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE - An oxidation process apparatus according to one embodiment of the present invention includes: a substrate holder provided in a processing chamber and having a substrate holding surface; a gas introduction unit for introducing an oxygen gas; a cylindrical member; and a substrate holder drive unit for changing relative positions of the substrate holder and the cylindrical member to allow the substrate holding surface and the cylindrical member to form an oxidation process space. The cylindrical member is provided so as to form a gap between the cylindrical member and the substrate holder during formation of the space. The oxygen gas is introduced restrictively into the space. The oxygen gas introduced from the gas introduction unit is evacuated through the gap. | 11-05-2015 |
20150332916 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device, includes forming a thin film containing silicon, oxygen and carbon or a thin film containing silicon, oxygen, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a precursor gas serving as a silicon source and a carbon source or a precursor gas serving as a silicon source but no carbon source, and a first catalyst gas to the substrate; supplying an oxidizing gas and a second catalyst gas to the substrate; and supplying a modifying gas containing at least one selected from the group consisting of carbon and nitrogen to the substrate. | 11-19-2015 |
20160172191 | Method of Manufacturing Semiconductor Device and Non-Transitory Computer-Readable Recording Medium | 06-16-2016 |