Class / Patent application number | Description | Number of patent applications / Date published |
438757000 | Silicon nitride | 8 |
20100124824 | Etch Apparatus and Method of Etching Silicon Nitride - An etch apparatus, especially for silicon nitride etch includes a control unit coupled to at least one component of the group of components comprising heater current sensors, a pump transducer sensor and a flow sensor provided for a diluting liquid. A malfunction of the apparatus is avoided and the etching process can be controlled for better performance. | 05-20-2010 |
20120264308 | ETCHING METHOD, ETCHING APPARATUS AND STORAGE MEDIUM - Disclosed is a technique for attaining high etching selectivity of a silicon nitride film to a silicon oxide film. The etching method includes a step of supplying a silylating agent to a substrate having a silicon nitride film and a silicon oxide film exposed on the surface thereof to thereby form a silylated film as a protective film over the surface of the silicon oxide film. After this step, an etching solution is supplied to the substrate. It is thus possible to selectively etch only the silicon nitride film. | 10-18-2012 |
20120289056 | SELECTIVE SILICON NITRIDE ETCH - Methods and etchant solutions for etching silicon nitride on a workpiece are provided. One method generally includes exposing the workpiece to a chemistry mixture including phosphoric acid and a diluent, wherein the chemistry mixture has a water content of less than 10% by volume, and heating at least one of the workpiece and the chemistry mixture to a process temperature to etch silicon nitride from the workpiece. | 11-15-2012 |
20130029495 | REMOVAL OF SILICON NITRIDES DURING MANUFACTURING OF SEMICONDUCTOR DEVICES - A method to remove excess material during the manufacturing of semiconductor devices includes providing a semiconductor wafer comprising silicon nitride deposited thereon and applying a chemical solution to the semiconductor wafer, wherein the chemical solution comprises a combination of sulfuric acid and deionized water. | 01-31-2013 |
20130065400 | ETCHING METHOD - According to one embodiment, an etching method includes: supplying an etching-resistant material; and etching the silicon nitride film. The supplying includes supplying the etching-resistant material to a processing surface including a surface of a silicon nitride film and a surface of a non-etching film, the non-etching film including a material different from the silicon nitride film. The etching includes etching the silicon nitride film using an etchant in a state of the etching-resistant material being formed relatively more densely on the surface of the non-etching film than on the surface of the silicon nitride film. | 03-14-2013 |
20140113455 | METHOD OF FORMING A SEMICONDUCTOR STRUCTURE INCLUDING A WET ETCH PROCESS FOR REMOVING SILICON NITRIDE - A method disclosed herein includes providing a semiconductor structure comprising a transistor, the transistor comprising a gate electrode and a silicon nitride sidewall spacer formed at the gate electrode. A wet etch process is performed. The wet etch process removes at least a portion of the silicon nitride sidewall spacer. The wet etch process comprises applying an etchant comprising at least one of hydrofluoric acid and phosphoric acid. | 04-24-2014 |
20150111390 | METHOD OF SELECTIVELY REMOVING SILICON NITRIDE AND SINGLE WAFER ETCHING APPARATUS THEREOF - A method of selectively removing silicon nitride is provided. The method includes: providing a wafer having silicon nitride on a surface of the wafer; providing a mixture of phosphoric acid and a silicon-containing material; and delivering the mixture to the surface of the wafer to remove the silicon nitride. Single wafer etching apparatuses of selectively removing silicon nitride are also provided. | 04-23-2015 |
20160035580 | COMPOSITIONS AND METHODS FOR THE SELECTIVE REMOVAL OF SILICON NITRIDE - Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100° C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 Å min | 02-04-2016 |