| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 438753000 |
Silicon
| 30 |
| 438754000 |
Electrically conductive material (e.g., metal, conductive oxide, etc.)
| 16 |
| 438748000 |
Projection of etchant against a moving substrate or controlling the angle or pattern of projected etchant
| 14 |
| 438746000 |
Utilizing electromagnetic or wave energy
| 13 |
| 438756000 |
Silicon oxide
| 7 |
| 438749000 |
Sequential application of etchant | 5 |
| 20090170336 | METHOD FOR FORMING PATTERN OF SEMICONDUCTOR DEVICE - A method for forming a pattern of a semiconductor device comprises forming a spacer with an oxide film in a SPT process, and removing the spacer formed to have a horn shape before etching an underlying layer, so that the horn shape is transcribed in a lower portion, thereby facilitating control of critical dimension in etching the underlying layer so as to improve a characteristic of the device. | 07-02-2009 |
| 20090075485 | METHOD FOR FORMING PATTERN OF SEMICONDUCTOR DEVICE - A method for forming a fine pattern of a semiconductor device comprises: forming a first hard mask film and an etch barrier film over a semiconductor substrate; forming a sacrificial pattern over the etch barrier film; forming a spacer on sidewalls of the sacrificial pattern; removing the sacrificial pattern; etching the etch barrier film and the hard mask film with the spacer as an etch mask to form an etch barrier pattern and a hard mask pattern; and removing the spacer and the etch barrier pattern, thereby improving yield and reliability of the device. | 03-19-2009 |
| 20110143550 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, APPARATUS FOR PROCESSING SUBSTRATE, AND COMPUTER READABLE MEDIUM - A method for manufacturing a semiconductor device, including: partially removing a first layer formed on a wafer supported by a support member by supplying a first liquid at a temperature of | 06-16-2011 |
| 20120190209 | METHOD FOR PRODUCING AND STRUCTURING A ZINC OXIDE LAYER AND ZINC OXIDE LAYER - Disclosed is a method for producing ZnO contact layers for solar cells. The layers are etched using hydrofluoric acid so as to generate a texture. | 07-26-2012 |
| 20130122716 | Methods of Controlling the Etching of Silicon Nitride Relative to Silicon Dioxide - Disclosed herein are methods of controlling the etching of a layer of silicon nitride relative to a layer of silicon dioxide. In one illustrative example, the method includes providing an etch bath that is comprised of an existing etchant adapted to selectively etch silicon nitride relative to silicon dioxide, performing an etching process in the etch bath using the existing etchant to selectively remove a silicon nitride material positioned above a silicon dioxide material on a plurality of semiconducting substrates, determining an amount of the existing etchant to be removed based upon a per substrate silicon loading of the etch bath by virtue of etching the plurality of substrates in the etch bath and determining an amount of new etchant to be added to the etch bath based upon a per substrate silicon loading of the etch bath by virtue of etching the plurality of substrates in the etch bath. | 05-16-2013 |
| 438747000 |
With relative movement between substrate and confined pool of etchant | 5 |
| 20110195579 | SCRIBE-LINE DRAINING DURING WET-BENCH ETCH AND CLEAN PROCESSES - Controlling scribe line orientation during wet-bench processes has been found to improve yield and reduce particles from inadequate draining when the scribe lines are oriented about 45 degrees from horizontal. A wafer is provided to the wet bench apparatus and immersed in a solution. When removed from the solution, the wafer should be oriented vertically with scribe lines oriented about 45 degrees, plus or minus 15 degrees from horizontal. Wafer scribe line orientation are checked and changed before the wet bench process or during the wet bench processing. | 08-11-2011 |
| 20110223771 | Wet metal-etching method and apparatus used for MEMS - The present invention provides a method of wet etching a silicon slice including a silicon substrate and a metal film layer thereon comprising steps of: performing lithographic process to the silicon slice forming a masked silicon slice comprising the silicon substrate and a partially masked metal film thereon; immersing the masked silicon slice into an etchant; rotating the masked silicon slice in the etchant; injecting high-purity nitrogen gas into the etchant for agitating the etchant; removing the masked silicon slice out of the etchant, upon completion of etching; and rinsing the masked silicon slice with deionized water. | 09-15-2011 |
| 20100062611 | Method and Apparatus for Thinning a Substrate - Provided is a method for fabricating a semiconductor device that includes providing a semiconductor substrate having a front side and a backside, where active or passive devices are formed in the front side, rotating the semiconductor substrate, and etching the backside of the semiconductor substrate by introducing a first etchant while the substrate is rotated, the first etchant including an R—COOH. | 03-11-2010 |
| 20110045673 | METHOD FOR MANUFACTURING A SILICON SURFACE WITH PYRAMIDAL TEXTURE - The invention relates to a method for manufacturing a silicon surface with a pyramidal structure, in which a silicon wafer containing the silicon surface is dipped into an etching solution. To produce a pyramidal structure that is as homogeneous as possible, according to the invention it is proposed that the silicon surface be treated with ozone prior to coming into contact with the etching solution. | 02-24-2011 |
| 20110183524 | METHOD FOR CHEMICALLY TREATING A SUBSTRATE - A method for chemically treating a disc-shaped substrate having a bottom surface, a top surface and side surfaces by contacting a process medium that is fluid-chemically active with at least the bottom surface of the substrate. The substrate is moved relative to the process medium while forming a triple line between the substrate, the substrate medium and the atmosphere surrounding the substrate and medium. In order to chemically remove errors, particularly in the side surfaces, relative motion should be carried out while avoiding a contacting of the process medium with the top surface of the substrate, where the triple line is formed at a desired height of the side surface facing away from the process medium flow side in relation to the relative motion between the substrate and the process medium. In this way, the atmosphere can be adjusted in relation to the partial pressures of the components in the process medium such that the top surface preserves hydrophobic characteristics. | 07-28-2011 |
| 438757000 |
Silicon nitride | 5 |
| 20130029495 | REMOVAL OF SILICON NITRIDES DURING MANUFACTURING OF SEMICONDUCTOR DEVICES - A method to remove excess material during the manufacturing of semiconductor devices includes providing a semiconductor wafer comprising silicon nitride deposited thereon and applying a chemical solution to the semiconductor wafer, wherein the chemical solution comprises a combination of sulfuric acid and deionized water. | 01-31-2013 |
| 20130065400 | ETCHING METHOD - According to one embodiment, an etching method includes: supplying an etching-resistant material; and etching the silicon nitride film. The supplying includes supplying the etching-resistant material to a processing surface including a surface of a silicon nitride film and a surface of a non-etching film, the non-etching film including a material different from the silicon nitride film. The etching includes etching the silicon nitride film using an etchant in a state of the etching-resistant material being formed relatively more densely on the surface of the non-etching film than on the surface of the silicon nitride film. | 03-14-2013 |
| 20100124824 | Etch Apparatus and Method of Etching Silicon Nitride - An etch apparatus, especially for silicon nitride etch includes a control unit coupled to at least one component of the group of components comprising heater current sensors, a pump transducer sensor and a flow sensor provided for a diluting liquid. A malfunction of the apparatus is avoided and the etching process can be controlled for better performance. | 05-20-2010 |
| 20120264308 | ETCHING METHOD, ETCHING APPARATUS AND STORAGE MEDIUM - Disclosed is a technique for attaining high etching selectivity of a silicon nitride film to a silicon oxide film. The etching method includes a step of supplying a silylating agent to a substrate having a silicon nitride film and a silicon oxide film exposed on the surface thereof to thereby form a silylated film as a protective film over the surface of the silicon oxide film. After this step, an etching solution is supplied to the substrate. It is thus possible to selectively etch only the silicon nitride film. | 10-18-2012 |
| 20120289056 | SELECTIVE SILICON NITRIDE ETCH - Methods and etchant solutions for etching silicon nitride on a workpiece are provided. One method generally includes exposing the workpiece to a chemistry mixture including phosphoric acid and a diluent, wherein the chemistry mixture has a water content of less than 10% by volume, and heating at least one of the workpiece and the chemistry mixture to a process temperature to etch silicon nitride from the workpiece. | 11-15-2012 |
| 438752000 |
Germanium | 4 |
| 20090149030 | OXIDE ETCHING METHOD - There is provided an etching method of an amorphous oxide layer containing In and at least one of Ga and Zn, which includes etching the amorphous oxide layer using an etchant containing any one of acetic acid, citric acid, hydrochloric acid, and perchloric acid. | 06-11-2009 |
| 20100267244 | METHOD FOR TREATING GERMANIUM SURFACES AND SOLUTIONS TO BE EMPLOYED THEREIN - The present invention concerns an improved method for treating germanium surfaces in order to reveal crystal defects. | 10-21-2010 |
| 20120034787 | Defect Etching of Germanium - The present invention provides an etching solution for revealing defects in a germanium layer, a method for revealing defects in a germanium layer using such an etching solution and to a method for making such an etching solution. The etching solution according to embodiments of the present invention is able to exhibit an etch rate of between 4 nm·min | 02-09-2012 |
| 20090215275 | Defect Etching of Germanium - The present invention provides an etching solution for revealing defects in a germanium layer, a method for revealing defects in a germanium layer using such an etching solution and to a method for making such an etching solution. The etching solution according to embodiments of the present invention is able to exhibit an etch rate of between 4 nm·min | 08-27-2009 |
| Entries |
| Document | Title | Date |
|---|
| 20120184109 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND COMPUTER READABLE MEDIUM FOR STORING PATTERN SIZE SETTING PROGRAM - A method of manufacturing a semiconductor device, which forms a pattern by performing pattern transformation steps multiple times, comprises setting finished pattern sizes for patterns to be formed in each consecutive two pattern transformation steps among the plurality of pattern transformation steps based on a possible total amount of in-plane size variation of the patterns to be formed in the consecutive two pattern transformation steps. | 07-19-2012 |
| 20130084709 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - In a substrate processing apparatus, an anti-static liquid supply part supplies the anti-static liquid having electrical resistivity higher than that of an SPM liquid onto a substrate to puddle an entire upper surface of the substrate with the anti-static liquid, to thereby gradually remove static electricity from the substrate. Then, the processing liquid supply part supplies the SPM liquid onto the substrate to thereby perform an SPM process. In the SPM process, it is thereby possible to prevent a large amount of electric charges from rapidly moving from the substrate to the SPM liquid and prevent any damage to the substrate. Further, by maintaining the electrical resistivity of the anti-static liquid at the target electrical resistivity, it is possible to increase the static elimination efficiency of the substrate and shorten the time required for the static elimination process within the limits of causing no damage to the substrate. | 04-04-2013 |
| 20130084710 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A substrate processing apparatus comprises a single-substrate processing apparatus for processing substrates one by one, and an anti-static liquid storage part for storing an anti-static liquid having electrical resistivity maintained at target electrical resistivity higher than the electrical resistivity of an SPM liquid. A plurality of substrates held in a cartridge are immersed in the anti-static liquid inside the anti-static liquid storage part and both main surfaces of the substrate entirely come into contact with the anti-static liquid. From the substrates, static electricity is relatively gently removed. Then, after the static elimination process are finished, a processing liquid supply part supplies the SPM liquid onto an upper surface of the substrate and an SPM process is thereby performed. It is thereby possible to prevent a large amount of electric charges from rapidly moving from the substrate to the SPM liquid and also possible to prevent any damage to the substrate. | 04-04-2013 |
| 20090305511 | Methods of Treating Semiconductor Substrates, Methods Of Forming Openings During Semiconductor Fabrication, And Methods Of Removing Particles From Over Semiconductor Substrates - Some embodiments include methods of treating semiconductor substrates. The substrates may be exposed to one or more conditions that vary continuously. The conditions may include temperature gradients, concentration gradients of one or more compositions that quench etchant, pH gradients to assist in removing particles, and/or concentration gradients of one or more compositions that assist in removing particles. The continuously varying conditions may be imparted by placing the semiconductor substrates in a bath of flowing rinsing solution, with the bath having at least two feed lines that provide the rinsing solution therein. One of the feed lines may be at a first condition, and the other may be at a second condition that is different from the first condition. The relative amount of rinsing solution provided to the bath by each feed line may be varied to continuously vary the condition within the bath. | 12-10-2009 |
| 20090093127 | Treatment of a Substrate with a Liquid Medium - The invention relates to an arrangement of electronic semiconductor components on a carrier system for treating the semiconductor components with a liquid medium. A semiconductor component is detachably mounted on the carrier system with the active side thereof in such a way that the arrangement comprises a gap at least in the edge region and partially between the semiconductor components and the carrier system. The aim of the invention is to provide a detachable arrangement of electronic semiconductor components on a mechanically stable carrier system for safely handling the semiconductor components during the production process, wherein the capillarity of the gap between the semiconductor components and the carrier system is reduced in a controlled manner, thus preventing the damaging effect of a liquid medium seeping into the gap. To this end, the surface of the carrier system is shaped in such a way that the gap is widened along the entire edge region thereof. | 04-09-2009 |
| 20090093126 | METHOD OF AND AN APPARATUS FOR PROCESSING A SUBSTRATE - A method of processing a semiconductor substrate ( | 04-09-2009 |
| 20130095667 | GAS BARRIER WITH VENT RING FOR PROTECTING A SURFACE REGION FROM LIQUID - A protective chuck is disposed on a substrate with a gas bearing layer between the bottom surface of the protective chuck and the substrate surface. The gas bearing layer protects a surface region against a fluid layer covering the substrate surface. The protection of the gas bearing is a non-contact protection, reducing or eliminating potential damage to the substrate surface due to friction. The gas bearing can enable combinatorial processing of a substrate, providing multiple isolated processing regions on a single substrate with different material and processing conditions. | 04-18-2013 |
| 20080214013 | Method for Removal of Bulk Metal Contamination from III-V Semiconductor Substrates - The invention provides a single-step method for removing bulk metal contamination from III-V semiconductor substrates. The method comprises immersing a metal contaminated III-V semiconductor substrate in a mixture of sulfuric acid and peroxide with a volume ratio of sulfuric acid to peroxide (e.g., hydrogen peroxide) between about 3:1 and about 9:1. After treating the III-V semiconductor substrates with the sulfuric acid-peroxide mixture, the bulk metal contamination may be substantially removed from the substrate while a surface roughness of the substrate after treatment of below about 0.5 nm RMS (2 μm×2 μm) is obtained. The invention further provides a method for manufacturing a semiconductor device by removing bulk metal contamination according to the single-step method of the invention before performing processing steps for forming the semiconductor device. | 09-04-2008 |
| 20130115782 | PROCESS FOR REMOVING MATERIAL FROM SUBSTRATES - A method of removing materials, and preferably photoresist, from a substrate comprises dispensing a liquid sulfuric acid composition comprising sulfuric acid and/or its desiccating species and precursors and having a water/sulfuric acid molar ratio of no greater than 5:1 onto an material coated substrate in an amount effective to substantially uniformly coat the material coated substrate. The substrate is preferably heated to a temperature of at least about 90° C., either before, during or after dispensing of the liquid sulfuric acid composition. After the substrate is at a temperature of at least about 90° C., the liquid sulfuric acid composition is exposed to water vapor in an amount effective to increase the temperature of the liquid sulfuric acid composition above the temperature of the liquid sulfuric acid composition prior to exposure to the water vapor. The substrate is then preferably rinsed to remove the material. | 05-09-2013 |
| 20130122715 | Etching Agent for Type II InAs/GaInSb Superlattice Epitaxial Materials - This disclosure involves a formula, mixing procedure, etching technique and application of an etchant for revealing defects in T2SL's grown lattice matched to (100) GaSb. The etching agent comprises a (2.5:4.5:16.5:280) solution by volume or (1%:2%:9%:88%) by weight, of HF:H | 05-16-2013 |
| 20090017636 | TITANIUM NITRIDE-STRIPPING LIQUID, AND METHOD FOR STRIPPING TITANIUM NITRIDE COATING FILM - A titanium nitride-stripping liquid for stripping a titanium nitride coating film, the titanium nitride-stripping liquid being capable of stripping a titanium nitride coating film even in a semiconductor multilayer laminate having particularly a layer that includes tungsten or a tungsten alloy, without corrosion of this layer is provided, and furthermore, a titanium nitride-stripping liquid which can strip a titanium nitride coating film without affecting an insulating layer is provided. A titanium nitride-stripping liquid including hydrofluoric acid, hydrogen peroxide and water, and further including an inorganic acid other than hydrofluoric acid. According to the present invention, since the titanium nitride-stripping liquid includes an inorganic acid other than hydrofluoric acid, a titanium nitride coating film can be stripped even in the case in which a semiconductor multilayer laminate has a layer that includes tungsten or a tungsten alloy, without corrosion of the layer by the titanium nitride-stripping liquid. | 01-15-2009 |
| 20110130009 | METHOD AND APPARATUS FOR SURFACE TREATMENT USING A MIXTURE OF ACID AND OXIDIZING GAS - Improved removal of ion-implanted photoresist in a single wafer front-end wet processing station is achieved by combining gaseous ozone and heated sulfuric acid such that a gas/liquid dispersion or foam of ozone in sulfuric acid is applied in a layer to the wafer surface to be treated. | 06-02-2011 |
| 20110275221 | METHOD FOR TREATMENT SUBSTRATES AND TREATMENT COMPOSITION FOR SAID METHOD - A mixture of perhalogenic acid and sulfuric acid is unexpectedly stable at high temperatures and is effective in stripping photoresists, including difficult to treat ion-implanted photoresists, with short processing times. In use, no decomposition of the mixture is observed up to a temperature of 145° C. In the mixture, the sulfuric acid is highly purified and has a concentration of 96 wt % or greater. The perhalogenic acid is preferably H | 11-10-2011 |
| 20110287634 | METHOD OF FORMING CURRENT TRACKS ON SEMICONDUCTORS - Methods of making current tracks for semiconductors are disclosed. The methods involve selectively depositing a hot melt ink resist containing rosin resins and waxes on a silicon dioxide or silicon nitride layer coating a semiconductor followed by etching uncoated portions of the silicon dioxide or silicon nitride layer with an inorganic acid etch to expose the semiconductor and simultaneously inhibit undercutting of the hot melt ink resist. The etched portions may then be metallizaed to form a plurality of substantially uniform current tracks. | 11-24-2011 |
| 20110143549 | ETCHING METHOD, METHOD FOR MANUFACTURING MICROSTRUCTURE, AND ETCHING APPARATUS - In one embodiment, an etching method is disclosed. The method can include producing an oxidizing substance by electrolyzing a sulfuric acid solution, and producing an etching solution having a prescribed oxidizing species concentration by controlling a produced amount of the produced oxidizing substance. The method can include supplying the produced etching solution to a surface of a workpiece. | 06-16-2011 |
| 20120108074 | METHOD FOR TREATING A SEMICONDUCTOR WAFER - Disclosed is a method for treating semiconductor wafer including:
| 05-03-2012 |
| 20110294301 | Method of Preventing Premature Drying - A method for processing a substrate includes receiving a substrate and processing the substrate using a first fluid meniscus and a second fluid meniscus. The first fluid meniscus and the second fluid meniscus are applied to a surface of the substrate such that the first fluid meniscus is spaced apart from the second fluid meniscus by a transition region. A saturated gas chemistry is applied to the surface of the substrate at the transition region. The saturated gas chemistry is configured to maintain moisture in the transition region so as to prevent drying of the surface of the substrate in the transition region, before the second fluid meniscus is applied to the surface of the substrate. | 12-01-2011 |
| 20100136794 | METHOD FOR REMOVING ETCHING RESIDUES FROM SEMICONDUCTOR COMPONENTS - A method for cleaning structured surfaces of semiconductor components to remove photoresist and etching residues after the etching of the surface, comprising: a) treatment of the surface with an acidic aqueous solution comprising one or more acids and one or more oxidizing agents, b) removal of the photoresist and c) washing with demineralized water in the stated sequence. | 06-03-2010 |
| 20090298295 | METHOD FOR TREATING SURFACE OF A GLASS SUBSTRATE - A surface treatment solution for finely processing a glass substrate containing multiple ingredients like the one used for the construction of a liquid crystal-based or organic electroluminescence-based flat panel display device, without evoking crystal precipitation and surface roughness. | 12-03-2009 |
| 20110217847 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device and manufacturing method thereof capable of improving an operating speed of a MOSFET using an inexpensive structure. The method comprises the steps of forming a stress film to cover a source, drain, sidewall insulating layer and gate of the MOSFET and forming in the stress film a slit extending from the stress film surface toward the sidewall insulating layer. As a result, an effect of allowing local stress components in the stress films on the source and the drain to be relaxed by local stress components in the stress film on the gate is suppressed by the slit. | 09-08-2011 |
| 20100112821 | ETCHING SOLUTION - The present invention provides an etching solution in which a change in the composition due to the evaporation of the chemical solution or the like is small, thus reducing the frequency with which the chemical solution must be replaced, and in which the time-dependent change in etch rate is also small, thus allowing uniform etching of a silicon oxide film. Specifically, the present invention relates to an etching solution, a process of producing the same, and an etching process using the same, in which the etching solution includes hydrofluoric acid (a), ammonium fluoride (b), and salt (c) formed between hydrogen fluoride and a base having a boiling point higher than that of ammonia; the concentration of ammonium fluoride (b) is not higher than 8.2 mol/kg, and the total amount of ammonium fluoride (b) and salt (c) formed between hydrogen fluoride and a base having a boiling point higher than that of ammonia is not less than 9.5 mol/kg. | 05-06-2010 |
| 20080318434 | SYSTEMS AND METHODS FOR OSCILLATING EXPOSURE OF A SEMICONDUCTOR WORKPIECE TO MULTIPLE CHEMISTRIES - Systems and methods for oscillating exposure of a semiconductor workpiece to multiple chemistries are disclosed. A method in accordance with one embodiment includes sequentially exposing a portion of a semiconductor workpiece surface to a first chemistry having a first chemical composition and a second chemistry having a second chemical composition different than the first. Prior to rinsing the portion of the workpiece surface, the portion is sequentially exposed to the first and second chemistries again. The first and second chemistries are removed from the portion, and, after sequentially exposing the portion to each of the first and second chemistries at least twice, and removing the first and second chemistries, the portion is rinsed and dried. | 12-25-2008 |
| 20100120258 | METHOD FOR FORMING MICRO-PATTERN IN SEMICONDUCTOR DEVICE - A method for forming a micro-pattern in a semiconductor device includes forming a hard mask layer and a sacrificial layer over an etch target layer, forming a plurality of openings having a hole shape in the sacrificial layer, forming spacers over inner sidewalls of the openings to form first hole patterns inside the openings, etching the sacrificial layer outside of the sidewalls of the openings using the spacers in a manner that the sacrificial layer in a first area remains partially and the sacrificial layer in a second area is removed to form second hole patterns, wherein the first area is smaller than the second area, and etching the hard mask layer using the remaining sacrificial layer and the spacers including the first and second hole patterns. | 05-13-2010 |
| 20090291565 | Method for stripping photoresist - Disclosed is a method for stripping a photoresist comprising: (I) providing a photoresist pattern on a substrate where the substrate has at least a copper (Cu) wiring and a low-dielectric layer thereon, and selectively etching the low-dielectric layer by using the photoresist pattern as a mask; (II) contacting the substrate after the step (I), with ozone water and/or aqueous hydrogen peroxide; and (III) contacting the substrate after the step (II), with a photoresist stripping solution that contains at least a quaternary ammonium hydroxide. The present invention provides a method for stripping a photoresist that enables to strip effectively photoresist films and etching residues after etching step even in a process not including an O | 11-26-2009 |
| 20120295446 | METHOD FOR SINGLE SIDE TEXTURING - A method for single side texturing of a crystalline semiconductor substrate ( | 11-22-2012 |
| 20080242101 | Process Control Method in Spin Etching and Spin Etching Apparatus - The present invention provides a process control method in spin etching capable of realizing uniformity in etching amount in etching treatment for even wafers each having various conditions, and achieving uniformity of thickness values among etched wafers. In the present invention, weight of a wafer before etching is measured in units of 1/1000 g, followed by predetermined etching treatment in a spin etching section. Thereafter, weight of the wafer is again measured in units of 1/1000 g after rinsing and drying treatment of the wafer, and then an actual etching amount is calculated from a difference between weight before and after etching of the wafer, confirming an etching rate each time etching to thereby control an etching time. | 10-02-2008 |
| 20080268651 | Catch-cup to diverter alignment leveling jig - An apparatus for leveling and centering a catch-cup chamber to a diverter chamber of a semiconductor processing chamber is described. In one embodiment, the apparatus has a frame with branches. A coupler is mounted to the end of each branch. A measuring device is mounted to each branch. The apparatus is placed in the diverter. The measuring device measures a distance from a branch to a top surface of the catch-cup chamber. | 10-30-2008 |
| 20080293252 | RESIST REMOVING METHOD AND RESIST REMOVING APPARATUS - In an inventive resist removing method, sulfuric acid and hydrogen peroxide water are supplied to a surface of a substrate to remove a resist from the substrate surface. Thereafter, hydrogen peroxide water is supplied to the substrate surface to remove the sulfuric acid from the substrate surface. | 11-27-2008 |
| 20080293253 | Wet etching of the edge and bevel of a silicon wafer - An apparatus and method used to selectively etch materials from the edge and bevel areas of a silicon wafer are provided. In one configuration, a bevel etch spin chuck, for use in a device for removing unwanted material from an edge and bevel area of a wafer, includes a fluid channel, a separation barrier, and a gas channel that are substantially circular and concentric. A fluid, such as an etching solution, is provided to the fluid channel and contacts one or more areas at the edge and bevel area of the wafer. A stream of continuously flowing gas, such as nitrogen, is provided to the gas channel and purges an active side of the wafer. | 11-27-2008 |
| 20090029560 | Apparatus and method for single substrate processing - In a method for treating a semiconductor substrate, a single substrate is positioned in a single-substrate process chamber and subjected to wet etching, cleaning and/or drying steps. The single substrate may be exposed to etch or clean chemistry in the single-substrate processing chamber as turbulence is induced in the etch or clean chemistry to thin the boundary layer of fluid attached to the substrate. Megasonic energy and/or disturbances in the chamber surfaces may provide the turbulence for boundary layer thinning. According to another aspect of a method according to the present invention, megasonic energy may be directed into a region within the single-substrate process chamber to create a zone of boundary layer thinning across the substrate surface, and a single substrate may be translated through the zone during a rinsing or cleaning process within the chamber to optimize cleaning/rinsing performance within the zone. | 01-29-2009 |
| 20090181546 | Single-Wafer Etching Method for Wafer and Etching Apparatus Thereof - A single-wafer etching apparatus according to the present invention supplies an etchant to an upper surface of a wafer while rotating the wafer, thereby etching the upper surface of the wafer. Further, wafer elevating means moves up and down the wafer, and a lower surface blow mechanism which blows off the etchant flowing down on an edge surface of the wafer toward a radially outer side of the wafer by injection of a gas is fixed and provided without rotating together with the wafer. Furthermore, gap adjusting means controls the wafer elevating means based on detection outputs from gap detecting means for detecting a gap between the wafer and the lower surface blow mechanism, thereby adjusting the gap. The apparatus according to the present invention uniformly etches the edge portion without collapsing a chamfered shape of the edge portion of the wafer, and prevents a glitter from being produced on the edge surface of the wafer. | 07-16-2009 |
| 20080233759 | HIGH SELECTIVITY BPSG TO TEOS ETCHANT - Methods of selectively etching BPSG over TEOS are disclosed. In one embodiment, a TEOS layer may be used to prevent contamination of other components in a semiconductor device by the boron and phosphorous in a layer of BPSG deposited over the TEOS layer. An etchant of the present invention may be used to etch desired areas in the BPSG layer, wherein the high selectivity for BPSG to TEOS of etchant would result in the TEOS layer acting as an etch stop. A second etchant may be utilized to etch the TEOS layer. The second etchant may be less aggressive and, thus, not damage the components underlying the TEOS layer. | 09-25-2008 |
| 20100248494 | Method of cleaning semiconductor wafers - A method of cleaning semiconductor wafers using an acid cleaner followed by an alkaline cleaner to clean contaminants from the materials is provided. The acid cleaner removes substantially all of the metal contaminants while the alkaline cleaner removes substantially all of the non-metal contaminants, such as organics and particulate material. | 09-30-2010 |
| 20100248495 | SILICON ETCHING LIQUID AND ETCHING METHOD - A silicon etching liquid characterized by anisotropically dissolving monocrystalline silicon therein by using an aqueous solution containing a quaternary ammonium hydroxide and an aminoguanidine salt and an etching method of silicon using the instant etching liquid are an etching liquid and an etching method enabling one to perform processing at a high etching rate in etching processing of silicon, particularly in etching processing of silicon in a manufacturing process of MEMS parts or semiconductor devices. | 09-30-2010 |
| 20090081880 | Method for manufacturing semiconductor device - The present invention provides a method for manufacturing a semiconductor device includes: a immersion process of immersing, in a fluoronitric acid solution, a lamination substrate, in which an SiC substrate formed of a silicon carbide (SiC) single crystal is applied to a silicon substrate or a quarts substrate with a larger hole diameter than the SiC substrate; and a peeling process of taking out the SiC substrate which is not dissolved and remains in the fluoronitric acid solution after the silicon substrate or the quartz substrate is dissolved and removed from the fluoronitric acid solution. | 03-26-2009 |
| 20110230053 | ETCHING AGENT, ETCHING METHOD AND LIQUID FOR PREPARING ETCHING AGENT - The present invention is directed to provide an etching agent for a semiconductor substrate, which is capable of etching a titanium (Ti)-based metal film or a tungsten (W)-based metal film on a semiconductor substrate and an etching method using relevant etching agent, and relates to a liquid for preparing the etching agent for a semiconductor substrate composed of a solution comprising (A) hydrogen peroxide, (B) a phosphonic acid chelating agent having a hydroxyl group, (C) a basic compound, and (D-1) a copper anticorrosive and/or (D-2) 0.01 to 3% by weight of two or more kinds of anion species other than phosphonic acid chelating agents having a hydroxyl group, in which anion species have no oxidizing power, an etching method characterized by etching a titanium (Ti)-based metal film or a tungsten (W)-based metal film on a semiconductor substrate using relevant etching agent for a semiconductor substrate, further, a solution comprising (B) a phosphonic acid chelating agent having a hydroxyl group, (C) a basic compound, and (D-1) a copper anticorrosive and/or (D-2) anion species other than phosphonic acid chelating agents having a hydroxyl group, in which anion species have no oxidizing power. | 09-22-2011 |
| 20090246967 | SEMICONDUCTOR SURFACE TREATMENT AGENT - A semiconductor surface treatment agent containing a fluorine compound, a water-soluble organic solvent and an inorganic acid, with the balance being water and a method for manufacturing a semiconductor device by etching a high dielectric constant insulating material using the subject semiconductor surface treatment agent are provided. According to the present invention, it is possible to selectively and efficiently etch a high dielectric constant insulating material to be used in a transistor formation process of the semiconductor device manufacture; and it is also possible to achieve etching with ease within a short period of time even for a high dielectric constant insulating material to which etching is hardly applied. | 10-01-2009 |
| 20090258503 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND COMPUTER READABLE MEDIUM FOR STORING PATTERN SIZE SETTING PROGRAM - A method of manufacturing a semiconductor device, which forms a pattern by performing pattern transformation steps multiple times, comprises setting finished pattern sizes for patterns to be formed in each consecutive two pattern transformation steps among the plurality of pattern transformation steps based on a possible total amount of in-plane size variation of the patterns to be formed in the consecutive two pattern transformation steps. | 10-15-2009 |
| 20090239384 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A discharge hole of a lower nozzle is directed at an angle of 5 degrees to 40 degrees slanting inward with respect to a normal to the upper surface of a bottom plate. Thus, the flow pressure of a processing solution discharged through the discharge hole is not excessively reduced. Further, a circulation area of the processing solution does not expand widely in an inner bath. As a result, the processing solution in the inner bath is effectively displaced while the processing solution smoothly flows into gaps between substrates. | 09-24-2009 |
| 20090317980 | FILTER, SUBSTRATE TREATMENT APPARATUS AND SUBSTRATE TREATMENT METHOD - A filter connectable to an external circulating system, the circulating system being included by a substrate treatment apparatus which etches a substrate with an H | 12-24-2009 |
| 20100216315 | ETCHING COMPOSITION FOR METAL MATERIAL AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE BY USING SAME - The invention provides an etchant composition employed for selectively etching a metallic material in production of a semiconductor device from an insulating material having high dielectric constant, an insulating material of silicon oxide film or silicon nitride film, and a metallic material, characterized in that the etchant composition is an aqueous solution containing a fluorine compound, and a chelating agent having, in the molecular structure thereof, a phosphorus oxo-acid as a functional group; or is an aqueous solution containing a fluorine compound, a chelating agent having, in the molecular structure thereof, a phosphorus oxo-acid as a functional group, and an inorganic acid and/or an organic acid. The invention also provides a method for producing a semiconductor device employing the etchant composition. According to the invention, a metallic material can be etched selectively and efficiently. | 08-26-2010 |
| 20110059618 | METHOD FOR TEXTURING SILICON SURFACES AND WAFERS THEREOF - This invention relates to a method for texturing a silicon surface and silicon wafers made by the method, where the method comprises immersing the wafers in an alkaline solution at pH>10, and applying a potential difference between the wafer and a platinum electrode in the electrolyte in the range of +10 to +85 V. | 03-10-2011 |
| 20120129355 | METHOD FOR TEXTURING A SURFACE OF A SEMICONDUCTOR SUBSTRATE AND DEVICE FOR CARRYING OUT THE METHOD - A method for texturing a surface of a semiconductor substrate is proposed. Therein, the surface is etched with an etching solution which etches the semiconductor substrate material, wherein a wetting agent is added to the etching solution, which wetting agent contains water-soluble polymers, in particular in the form of polyvinyl alcohol. Therein, the process temperatures of the etching solution can be increased in comparison to conventional texturing methods, as a result of which the process time can be reduced. Process guidance is simplified and process stability is increased. A suitable texturing device for carrying out the method can, in addition to a basin for accommodating the etching solution and a heater for heating the etching solution to at least 85° C., furthermore have an optionally heatable emptying device for emptying the etching solution out of the basin, a removal device for removing crystallised water-soluble polymers from the etching solution and a circulation device for circulating the etching solution. | 05-24-2012 |
| 20090246968 | SUBSTRATE TREATING APPARATUS AND SUBSTRATE TREATING METHOD - A substrate treating apparatus for performing treatment of substrates with a treating liquid. The apparatus includes a treating tank for storing the treating liquid and performing a predetermined treatment of the substrates; a treating liquid supply unit for supplying the treating liquid to the treating tank; a treating liquid discharge unit for discharging the treating liquid from the treating tank; a first storage unit for storing in advance an initial life count specifying an allowable number of treatments of the substrates to be carried out with the treating liquid after an entire liquid replacement which replenishes the treating tank with a new supply the treating liquid from the treating liquid supply unit; a second storage device for storing in advance a normal life count specifying an allowable number of treatments to be carried out with the treating liquid after reaching the initial life count and after a partial liquid replacement which discharges part of the treating liquid in a predetermined amount from the treating tank through the treating liquid discharge device and replenishes, from the treating liquid supply device, a new supply of the treating liquid in an amount corresponding to the predetermined amount; and a control device for performing treatment of the substrates until the initial life count is reached after the entire liquid replacement, and after the initial life count is reached and the partial liquid replacement is made, performing treatment of the substrates while making the partial liquid replacement each time the normal life count is reached. | 10-01-2009 |
| 20110130010 | ETCHING AND CLEANING METHODS AND ETCHING AND CLEANING APPARATUSES USED THEREFOR - A method of manufacturing a semiconductor device includes preparing a semiconductor wafer having a device area, an end face, and a surface peripheral area located outside the device area and between the end face and the device area. Forming a Cu layer on the semiconductor wafer and rotating the wafer in a horizontal plane. Emitting a first liquid from an edge nozzle towards the surface peripheral area which selectively removes a first unnecessary material in the surface peripheral area. Emitting a protecting liquid toward the semiconductor wafer, thereby protecting the device area from the first liquid. An angle of a longitudinal axis of the edge nozzle with respect to a tangent of the semiconductor wafer at a point, where the longitudinal axis of the edge nozzle intersects the end face of the wafer, is set in the range of 0 to 90 degrees in plan view. | 06-02-2011 |
| 20100311247 | Method and Device for Treating Silicon Wafers - A method and device for treating silicon wafers. In a first step, the silicon wafers ( | 12-09-2010 |
| 20100240222 | WAFER FIXTURE FOR WET PROCESS APPLICATIONS - The present invention is a wafer fixture comprising a housing body, a thrust plate, a flexure clamp, gaskets, flexure pins on an inner circumference of the housing body, locking grooves on an outer circumference of the flexure clamp, and a handle. A wafer may be placed between the gaskets of the housing body and the thrust plate. The flexure clamp may be placed over the thrust plate and secured to the housing body by rotating the flexure clamp such that locking grooves of the fixture plate mate with the flexure pins on the inner circumference of the housing body. The present invention in yet another embodiment is a wafer etch tool comprising a housing, a flexure clamp, and means for securing a wafer between the housing and the flexure clamp upon rotation of the flexure clamp within the housing. | 09-23-2010 |
| 20100062609 | METHODS FOR RETAINING METAL-COMPRISING MATERIALS USING LIQUID CHEMISTRY DISPENSE SYSTEMS FROM WHICH OXYGEN HAS BEEN REMOVED - Methods for fabricating a semiconductor device from a semiconductor substrate having a metal-comprising material and a disposable material are provided. In accordance with an exemplary embodiment, the method comprises providing a system for exposing the disposable material to a liquid chemistry and removing oxygen from the system. The disposable material is exposed to the liquid chemistry and is removed from the semiconductor substrate using the liquid chemistry and simultaneously the metal-comprising material is left substantially in tact. | 03-11-2010 |
| 20100062610 | METHOD OF REGULATING THE TITRATION OF A SOLUTION, DEVICE FOR CONTROLLING SAID REGULATION AND SYSTEM COMPRISING SUCH A DEVICE - Method for regulating the titration of a solution, in which a predetermined amount of a product contained in the solution is added to the solution according to a time interval, called the addition interval, which is proportional to the product of the time degradation coefficient D of the product in solution and the total volume Vt of the solution at the time of the addition. | 03-11-2010 |
| 20100055923 | Conformal Etch Material and Process - The present disclosure provides a method for etching a substrate. The method includes forming a resist pattern on the substrate; applying an etching chemical fluid to the substrate, wherein the etching chemical fluid includes a diffusion control material; removing the etching chemical fluid; and removing the resist pattern. | 03-04-2010 |
| 20100055922 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device improves the variation in critical dimensions of neighboring patterns when employing a negative SPT process. The method includes forming an etch stop layer on an etch target layer, forming a first hard mask pattern on the etch stop layer, forming a spacer pattern on a sidewall of the first hard mask pattern, forming a second hard mask layer on an entire surface of a resultant structure including the spacer pattern, forming a second hard mask pattern by etching the second hard mask layer up to a height of the first hard mask pattern, removing the spacer pattern, and forming a pattern by etching the etch stop layer and the etch target layer using the first and the second hard mask patterns as an etch barrier. | 03-04-2010 |
| 20100068889 | PARTICLE-CONTAINING ETCHING PASTES FOR SILICON SURFACES AND LAYERS - The present invention relates to particle-containing etching media in the form of etching pastes which are suitable for the full-area or selective etching of extremely fine lines or structures in silicon surfaces and layers and in glass-like surfaces formed from suitable silicon compounds. The present invention also relates to the use of the pastes according to the invention in processes for etching surfaces of this type. | 03-18-2010 |
| 20110250762 | METHOD OF CLEANING AND MICRO-ETCHING SEMICONDUCTOR WAFERS - A method of simultaneously cleaning inorganic and organic contaminants from semiconductor wafers and micro-etching the semiconductor wafers. After the semiconductor wafers are cut or sliced from ingots, they are contaminated with cutting fluid as well as metal and metal oxides from the saws used in the cutting process. Aqueous alkaline cleaning and micro-etching solutions containing alkaline compounds and mid-range alkoxylates are used to simultaneously clean and micro-etch the semiconductor wafers. | 10-13-2011 |
| 20110076854 | METHOD OF MANUFACTURING VERTICAL-CAVITY SURFACE EMITTING LASER - According to a method of manufacturing a vertical-cavity surface-emitting semiconductor laser element in accordance with the present invention, a process of wet etching is performed for a part that is oxidized in a layer of an AlGaAs ( | 03-31-2011 |
| 20110076855 | LAMINATE AND USE THEREOF - There is provided a resin laminate having a layer construction of a first inorganic material layer/insulating layer/second inorganic material layer or a layer construction of an inorganic material layer/insulating layer, wherein the insulating layer has a multi-layer structure of two or more resin layers of a core insulating layer and an adhesive insulating layer. In this case, the resin laminate has the adhesive insulating layer which can realize optimal etching, is suitable for etching by a wet process, and has excellent adhesion. At least one of the layers constituting the insulating layer is formed of a polyimide resin which comprises repeating units represented by formula (1) and has a glass transition point of 150 to 360° C. and is dissolvable in a basic solution at a rate of more than 3 μm/min, preferably more than 5 μm/min, and most preferably more than 8 μm/min. | 03-31-2011 |
| 20090317979 | METHOD FOR PATTERNING AN ACTIVE REGION IN A SEMICONDUCTOR DEVICE USING A SPACE PATTERNING PROCESS - Disclosed here in is a method for patterning an active region in a semiconductor device using a space patterning process that includes forming a partition pattern having partition pattern elements arranged in a square shape on a semiconductor substrate; forming a spacer on side walls of the partition pattern; removing the partition pattern; separating the spacer into first and second spacer portions to expose a portion of the semiconductor substrate; and etching the exposed portion of the semiconductor substrate to form a trench, wherein portions of the semiconductor substrate overlapped with the first and second spacer portions define an active region. | 12-24-2009 |
| 20080242103 | Method of manufacturing semiconductor device and semiconductor manufacturing apparatus - A method of manufacturing a semiconductor device having a process for cleaning a semiconductor substrate after the semiconductor substrate is etched for patterning includes a first process of preparing the semiconductor substrate having a first temperature, a second process of setting the semiconductor substrate at a second temperature, a third process of etching the semiconductor substrate having the second temperature by etching liquid having a third temperature, a fourth process of cleaning the semiconductor substrate to which the etching liquid is adhered, by ultrapure water having a fourth temperature, wherein the second temperature is set at the range between the first and the third temperatures. | 10-02-2008 |
| 20080242102 | CHEMISTRY FOR REMOVAL OF PHOTO RESIST, ORGANIC SACRIFICAL FILL MATERIAL AND ETCH POLYMER - Methods and associated structures of forming a microelectronic device are described. Those methods may include utilizing a cleaning mixture comprising a solvent such as ethylene glycol monopropyl ether, an inorganic base, an organic base, a copper corrosion inhibitor and a surfactant to clean at least one of a polymer residue, a organic sacrificial fill material and etched or un-etched photo resist from a Damascene structure of a microelectronic structure comprising a porous oxide dielectric. | 10-02-2008 |
| 20110256728 | WAFER THINNING METHOD IN WAFER TREATING SYSTEM - A wafer thinning apparatus for treating wafers each having at least a circuit-forming surface thereof protected, by immersing the wafers in a treating solution. The apparatus includes a support table for receiving, as placed thereon, containers each containing a plurality of wafers in one of groups into which the wafers are sorted according to predetermined ranges of thickness, a treating tank for storing the treating solution and receiving the containers, a transport mechanism for transporting the containers between the support table and the treating tank, and a control unit for controlling the transport mechanism to transport the containers successively to the treating tank, and for changing an immersion time of the containers in the treating tank for each group. | 10-20-2011 |
| 20080318435 | Composition for etching a metal hard mask material in semiconductor processing - An etching solution for a metal hard mask. The etching solution comprises a mixture of a dilute HF (hydrofluoric acid) and a silicon containing precursor. The etching solution also comprises a surfactant agent, a carboxylic acid, and a copper corrosion inhibitor. The etching solution is selectively toward etching the metal hard mask material (e.g., Titanium) while suppressing Tungsten, Copper, oxide dielectric material, and carbon doped oxide. | 12-25-2008 |
| 20110021032 | Etching of AlGaInAsSb - The present invention relates to a wet acid etchant for wet acid etching of intrinsic, n-doped or p-doped Al | 01-27-2011 |
| 20110263128 | SELECTIVE WET ETCHING AND TEXTURED SURFACE PLANARIZATION PROCESSES - The present invention relates to systems and methods associated with selective wet etching and textured surface planarization. The systems and methods described herein can be used to etch a component of a multi-layer stack, such as a GaN layer. In some embodiments, the multi-layer stack can include a substrate having a patterned surface and a light generating region. The substrate can be removed from the first multi-layer stack to form a second multi-layer stack. In some embodiments, the pattern on the surface of the substrate can leave behind a pattern on a surface of the second multi-layer stack. Accordingly, in some cases, the surface of the second multi-layer stack can be wet etched, for example, to smoothen the surface. In some embodiments, removing the substrate can expose an N-face of a GaN layer, and the wet etch can be performed such that the N-face of the GaN layer is etched. In some embodiments, the multi-layer stack includes a light generating region and can be part of a light emitting device. | 10-27-2011 |
| 20100029087 | APPARATUS AND METHOD FOR ETCHING SEMICONDUCTOR WAFER - An apparatus for etching a semiconductor wafer of the present invention includes a cylindrical inner bath | 02-04-2010 |
| 20110092074 | Texturing and cleaning agent for the surface treatment of wafers and use thereof - A liquid agent for the surface treatment of monocrystalline wafers, which contains an alkaline etching agent and also at least one low-volatile organic compound. Systems of this type can be used both for the cleaning, damage etch and texturing of wafer surfaces in a single etching step and exclusively for the texturing of silicon wafers with different surface quality, whether it now be wire-sawn wafers with high surface damage or chemically polished surfaces with minimum damage density. | 04-21-2011 |
| 20110117750 | NOVEL WET ETCHING AGENT FOR II-VI SEMICONDUCTORS AND METHOD - A novel etching agent for etching II-VI semiconductors is provided. The etching agent includes an aqueous solution of potassium permanganate and phosphoric acid. This etching solution can etch II-VI semiconductors at a rapid rate but tend to be much less reactive with III-V semiconductors. The provided agent can be used in a method for etching II-VI semiconductors. | 05-19-2011 |
| 20090042400 | SILICON SURFACE PREPARATION - Methods are provided for producing a pristine hydrogen-terminated silicon wafer surface with high stability against oxidation. The silicon wafer is treated with high purity, heated dilute hydrofluoric acid with anionic surfactant, rinsed in-situ with ultrapure water at room temperature, and dried. Alternatively, the silicon wafer is treated with dilute hydrofluoric acid, rinsed with hydrogen gasified water, and dried. The silicon wafer produced by the method is stable in a normal clean room environment for greater than 3 days and has been demonstrated to last without significant oxide regrowth for greater than 8 days. | 02-12-2009 |
| 20100151689 | TAPE-BASED EPITAXIAL LIFT OFF APPARATUSES AND METHODS - Embodiments of the invention generally relate to apparatuses and methods for producing epitaxial thin films and devices by epitaxial lift off (ELO) processes. In one embodiment, a method for forming thin film devices during an ELO process is provided which includes coupling a plurality of substrates to an elongated support tape, wherein each substrate contains an epitaxial film disposed over a sacrificial layer disposed over a wafer, exposing the substrates to an etchant during an etching process while moving the elongated support tape, and etching the sacrificial layers and peeling the epitaxial films from the wafers while moving the elongated support tape. Embodiments also include several apparatuses, continuous-type as well as a batch-type apparatuses, for forming the epitaxial thin films and devices, including an apparatus for removing the support tape and epitaxial films from the wafers on which the epitaxial films were grown. | 06-17-2010 |
| 20120064727 | SUBSTRATE TREATMENT EQUIPMENT AND METHOD OF TREATING SUBSTRATE USING THE SAME - Substrate treatment equipment includes a wet treatment apparatus for treating a substrate with a solution (liquid), a drying (treatment) apparatus discrete from the wet treatment apparatus and for drying the substrate using a supercritical fluid, and a transfer device. The substrate is extracted by the transfer device from the wet treatment apparatus after the substrate has been treated and the substrate is transferred by the device while wet to the dry treatment apparatus. To this end, various elements/methods may be used to keep the substrate wet or wet the substrate. In any case, the substrate is prevented from drying naturally, i.e., from air-drying, as the substrate is being transferred from the wet treatment apparatus to the drying apparatus. Thus, equipment and method prevent defects such as water spots and the leaning of fine structures on the substrate. | 03-15-2012 |
| 20110104905 | ETCHING COMPOSITION, IN PARTICULAR FOR STRAINED OR STRESSED SILICON MATERIALS, METHOD FOR CHARACTERIZING DEFECTS ON SURFACES OF SUCH MATERIALS AND PROCESS OF TREATING SUCH SURFACES WITH THE ETCHING COMPOSITION - The present invention provides a chromium-free etching composition suitable for treating various silicon-containing surfaces, including strained silicon on insulator surfaces as well as stressed silicon surfaces. The novel and inventive etching composition in accordance with the present invention includes hydrofluoric acid, nitric acid, acetic acid and an alkali iodide, preferably potassium iodide, present in an amount of 1 mmol/100 ml or more. | 05-05-2011 |
| 20110104904 | METHOD OF PROCESSING SILICON WAFER - A method of processing a silicon wafer including sequentially carrying out the steps of (1) preparing a lapped semiconductor silicon wafer, (2) cleaning the wafer with a surfactant, (3) cleaning the wafer with alkali or acid, and (4) etching the wafer with high-purity sodium hydroxide. | 05-05-2011 |
| 20120164840 | Substrate Processing Method and Substrate Processing Apparatus - A substrate processing method includes a liquid processing process that supplies a processing liquid onto a substrate to process the substrate; a heating process that heats the substrate on which a liquid film of the processing liquid is formed; a supplying process that supplies a volatile processing liquid to the substrate on which the liquid film of the processing liquid is formed; a stopping process that stops the supply of the volatile processing liquid to the substrate; and a drying process that dries the substrate by removing the volatile processing liquid, in which the heating process starts before the supplying process that supplies the volatile processing liquid and the substrate is heated so that the surface temperature of the substrate is higher than a dew point before the surface of the substrate is exposed from the volatile processing liquid. | 06-28-2012 |
| 20080207005 | Wafer Cleaning After Via-Etching - When a semiconductor wafer bears porous dielectric materials it is still possible to perform post-via-etch cleaning of the wafer using aqueous cleaning fluids if, before and/or simultaneously with application of the aqueous cleaning fluid(s), a water-soluble organosilane or like passivation material is used to form a passivation layer on the porous dielectric material. | 08-28-2008 |
| 20100048027 | Smooth and vertical semiconductor fin structure - A method for processing a semiconductor fin structure is disclosed. The method includes thermal annealing a fin structure in an ambient containing an isotope of hydrogen. Following the thermal annealing step, the fin structure is etched in a crystal-orientation dependent, self-limiting, manner. The crystal-orientation dependent etch may be selected to be an aqueous solution containing ammonium hydroxide (NH | 02-25-2010 |
| 20090104783 | Asher, Ashing Method and Impurity Doping Apparatus - To provide an asher, an ashing method and an impurity doping apparatus group which can detect the interface between a surface hardening layer of a resist and an internal nonhardening layer and the interface between the nonhardening layer and a semiconductor substrate, with a high throughput. | 04-23-2009 |
| 20090061642 | NOZZLE ASSEMBLY, APPARATUS FOR SUPPLYING PROCESSING SOLUTIONS HAVING THE SAME AND METHOD OF SUPPLYING PROCESSING SOLUTIONS USING THE SAME - In a nozzle assembly for supplying processing solutions, the nozzle assembly includes a housing, a plurality of supply units arranged in the housing and through which different processing solutions flow onto the substrate, and a plurality of nozzles connected to the supply units, respectively, in such a configuration that a first nozzle selected from the nozzles is directed to the substrate and the remaining nozzles excluding the first nozzle are directed away from the substrate. Accordingly, the mechanical structure of the nozzle assembly may be simplified and the nozzles directed away from the substrate may be prevented from being contaminated by the processing solutions that are injected onto the substrate through the nozzle directed to the substrate. | 03-05-2009 |
| 20120083132 | METHOD FOR MINIMIZING DEFECTS IN A SEMICONDUCTOR SUBSTRATE DUE TO ION IMPLANTATION - The effects of knock-on oxide in a semiconductor substrate are reduced by providing a semiconductor substrate and forming a thin layer of native oxide on the semiconductor substrate. Ion implantation is performed through the native oxide layer. The native oxide layer reduces the phenomenon of knock-on oxide and oxygen concentration within the semiconductor substrate. Further reduction may be achieved by etching the surface of the semiconductor substrate in order to eliminate a concentration of oxygen at a surface of the semiconductor substrate. | 04-05-2012 |
| 20100297852 | METHOD OF FORMING LINE/SPACE PATTERNS - A method of forming a line/space pattern includes forming a plurality of first pattern structures on a layer of hard mask material disposed on a substrate, forming a plurality of second pattern structures along sidewalls of the first pattern structures, removing the first pattern structures such that the second pattern structures stand alone on the layer of hard mask material, forming a first mask that exposes a location where a space of the line/space pattern to be formed is to have a width greater than the distance between adjacent ones of the second pattern structures, removing those of the second pattern structures which are exposed by the first mask such that others of the second pattern structures remain on the layer of hard mask material, forming a second mask that covers a location where a line of the line/space pattern to be formed is to have a width that is greater than the widths of the second pattern structures, forming a hard mask by etching the hard mask material layer using the second mask and the remaining second pattern structures as an etch mask, and etching the substrate using the hard mask as an etch mask. | 11-25-2010 |
| 20100233884 | PROCESSING APPARATUS AND METHOD FOR MAKING SEMICONDUCTOR DEVICES - A process apparatus and a method for making semiconductor devices is implemented in a semiconductor equipment and utilizes three magnetic objects arranged in a helical path. Chemicals within the chemical pipe are magnetized, and the chemicals include etch acids, photoresist stripper and clean chemicals. Then, efficiency of semiconductor process is increased. | 09-16-2010 |
| 20120276748 | METHODS FOR ETCHING DOPED OXIDES IN THE MANUFACTURE OF MICROFEATURE DEVICES - Methods for selectively etching doped oxides in the manufacture of microfeature devices are disclosed herein. An embodiment of one such method for etching material on a microfeature workpiece includes providing a microfeature workpiece including a doped oxide layer and a nitride layer adjacent to the doped oxide layer. The method include selectively etching the doped oxide layer with an etchant comprising DI:HF and an acid to provide a pH of the etchant such that the etchant includes (a) a selectivity of phosphosilicate glass (PSG) to nitride of greater than 250:1, and (b) an etch rate through PSG of greater than 9,000 Å/minute. | 11-01-2012 |
| 20100130020 | Substrate chucking member, substrate processing, apparatus having the member, and method of processing substrate using the member - A substrate chucking member includes a substrate supporting member and a rotation adjustment unit. The supporting member includes a rotatable supporting plate to load a substrate, and chucking pins disposed at the supporting plate for spacing the substrate off the top of the supporting plate by supporting the edge of the substrate from a side of the substrate. Each of the chucking pins is rotatable for rotating the substrate supported on the chucking pins. The rotation adjustment unit is disposed under the supporting plate for adjusting rotation of the chucking pins. During a process, since a substrate is rotated by the chucking pins to vary points of the substrate making contact with the chucking pins, positions of the substrate where a process liquid falls after colliding with the chucking pins can be continuously varied. Therefore, the substrate can be processed without defects at an end part of the substrate. | 05-27-2010 |
| 20120149208 | SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - According to one embodiment, a substrate processing apparatus includes a substrate support unit configured to support a substrate by fixing the substrate from a back surface side of a surface to be processed; and a substrate processing unit in which a pad into which a predetermined liquid is soaked is arranged and which performs a substrate process on the surface to be processed of the substrate with the liquid. The surface to be processed of the substrate is brought into contact with the liquid on the pad surface by bringing the surface to be processed of the substrate close to a side of the pad, without rotating the substrate and the pad, to perform a substrate process. | 06-14-2012 |
