Class / Patent application number | Description | Number of patent applications / Date published |
438724000 | Silicon nitride | 17 |
20080299777 | Silicon nitride film dry etching method - A silicon nitride film is dry etched by reactive ion etching using a mixed gas including a fluorine gas and an oxygen gas. | 12-04-2008 |
20080299778 | Silicon film dry etching method - A silicon film is dry etched by parallel plate type dry etching using a mixed gas including a fluorine gas and a chlorine gas. | 12-04-2008 |
20110021031 | HIGH LIFETIME CONSUMABLE SILICON NITRIDE-SILICON DIOXIDE PLASMA PROCESSING COMPONENTS - A method of increasing mean time between cleans of a plasma etch chamber and chamber parts lifetimes is provided. Semiconductor substrates are plasma etched in the chamber while using at least one sintered silicon nitride component exposed to ion bombardment and/or ionized halogen gas. The sintered silicon nitride component includes high purity silicon nitride and a sintering aid consisting of silicon dioxide. A plasma processing chamber is provided including the sintered silicon nitride component. A method of reducing metallic contamination on the surface of a silicon substrate during plasma processing is provided with a plasma processing apparatus including one or more sintered silicon nitride components. A method of manufacturing a component exposed to ion bombardment and/or plasma erosion in a plasma etch chamber, comprising shaping a powder composition consisting of high purity silicon nitride and silicon dioxide and densifying the shaped component. | 01-27-2011 |
20110223770 | NITRIDE PLASMA ETCH WITH HIGHLY TUNABLE SELECTIVITY TO OXIDE - A method for selectively etching a nitride layer with respect to a silicon oxide based layer over a substrate is provided. The substrate is placed in a plasma processing chamber. The nitride layer is etched, comprising the steps of flowing a nitride etch gas comprising a hydrocarbon species, an oxygen containing species and a fluorocarbon or hydrofluorocarbon species into the plasma chamber, forming a plasma from the nitride etch gas, and using the plasma from the nitride etch gas to selectively etch the nitride layer with respect to the silicon oxide based layer. | 09-15-2011 |
20110318936 | Etch process for reducing silicon recess - A method for selectively etching a substrate is described. The method includes disposing a substrate comprising a silicon nitride (SiN | 12-29-2011 |
20130029494 | PLASMA ETCHING METHOD, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND PLASMA ETCHING DEVICE - Provided is a plasma etching method increasing the selectivity of a silicon nitride film in relation to the silicon oxide film or silicon functioning as a base. In a plasma etching method setting a pressure in a processing container as a predetermined level by exhausting a processing gas while supplying the processing gas into the processing container, generating plasma by supplying external energy to the processing container, and setting a bias applied to a holding stage holding a substrate in the processing container as predetermined value to selectively etch the silicon nitride film with respect to a silicon and/or silicon oxide film, the processing gas includes a plasma excitation gas, a CHxFy gas, and at least one oxidizing gas selected from the group consisting of O | 01-31-2013 |
20130130507 | DRY-ETCH FOR SILICON-AND-NITROGEN-CONTAINING FILMS - A method of etching exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-nitrogen-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-nitrogen-containing material from the exposed silicon-and-nitrogen-containing material regions while very slowly removing other exposed materials. The silicon-and-nitrogen-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-nitrogen-containing material at more than twenty times the rate of silicon oxide. | 05-23-2013 |
20130157470 | PLASMA ETCHING METHOD - A plasma etching method that can improve an etching selection ratio of a film to be etched to a film different from the film to be etched compared with the related art is provided. The present invention provides a plasma etching method for selectively etching a film to be etched against a film different from the film to be etched, in which plasma etching of the film to be etched is performed using a gas that can cause to generate a deposited film containing similar components as components of the different film. | 06-20-2013 |
20130344702 | METHOD OF ETCHING SILICON NITRIDE FILMS - A processing method is provided for plasma etching features in a silicon nitride (SiN) film covered by a mask pattern. The method includes providing a film stack on a substrate, the film stack containing a SiN film on the substrate and a mask pattern on the SiN film, transferring the mask pattern to the SiN film by exposing the film stack to a first plasma containing a carbon-fluorine-containing gas, O | 12-26-2013 |
20140080310 | SILICON-CARBON-NITRIDE SELECTIVE ETCH - A method of etching exposed silicon-nitrogen-and-carbon-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-nitrogen-and-carbon-containing material. The plasma effluents react with the patterned heterogeneous structures to selectively remove silicon-nitrogen-and-carbon-containing material from the exposed silicon-nitrogen-and-carbon-containing material regions while very slowly removing selected other exposed materials. The silicon-nitrogen-and-carbon-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element controls the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-nitrogen-and-carbon-containing material at a faster rate than exposed silicon oxide or exposed silicon nitride. | 03-20-2014 |
20140141621 | DRY-ETCH SELECTIVITY - A method of etching exposed patterned heterogeneous structures is described and includes a remote plasma etch formed from a reactive precursor. The plasma power is pulsed rather than left on continuously. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents selectively remove one material faster than another. The etch selectivity results from the pulsing of the plasma power to the remote plasma region, which has been found to suppress the number of ionically-charged species that reach the substrate. The etch selectivity may also result from the presence of an ion suppression element positioned between a portion of the remote plasma and the substrate processing region. | 05-22-2014 |
20140199851 | METHOD OF PATTERNING A SILICON NITRIDE DIELECTRIC FILM - Methods of patterning silicon nitride dielectric films are described. For example, a method of isotropically etching a dielectric film involves partially modifying exposed regions of a silicon nitride layer with an oxygen-based plasma process to provide a modified portion and an unmodified portion of the silicon nitride layer. The method also involves removing, selective to the unmodified portion, the modified portion of the silicon nitride layer with a second plasma process. | 07-17-2014 |
20140220785 | Plasma Etching Method - A plasma etching method that can improve an etching selection ratio of a film to be etched to a film different from the film to be etched compared with the related art is provided. The present invention provides a plasma etching method for selectively etching a film to be etched against a film different from the film to be etched, in which plasma etching of the film to be etched is performed using a gas that can cause to generate a deposited film containing similar components as components of the different film. | 08-07-2014 |
20140242803 | Dry Etching Agent and Dry Etching Method Using the Same - A dry etching agent according to the present invention contains (A) a fluorinated propyne represented by the chemical formula: CF | 08-28-2014 |
20160020141 | METHOD OF FORMING CONTACT OPENINGS FOR A TRANSISTOR - A method for making contact openings for connecting a transistor from a stack of layers comprising an active layer made of a semi-conductor material, a silicide layer on the top of the active layer, a nitride-based layer on the top of the silicide layer, and an electrically insulating layer on the top of the nitride-based layer, includes opening for forming, in the insulating layer, an exposing opening on the nitride-based layer and delimited by flanks of the insulating layer, and removing the nitride-based layer by modifying the nitride-based layer at the opening using plasma wherein CxHy is introduced where x is the proportion of carbon and y is the proportion of hydrogen ions and comprising ions heavier than hydrogen. The conditions of plasma being so chosen as to modify a portion of the nitride-based layer and to form a protective carbon film on the flanks of the insulating layer. | 01-21-2016 |
20160086814 | ETCHING METHOD - An etching method includes loading a target substrate W into a chamber | 03-24-2016 |
20160111298 | ETCHING METHOD USING PLASMA, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING THE ETCHING METHOD - An etching method using plasma includes generating plasma by supplying process gases to at least one remote plasma source (RPS) and applying power to the at least one RPS, and etching an etching object by supplying water (H | 04-21-2016 |