Class / Patent application number | Description | Number of patent applications / Date published |
438686000 | Noble group metal (i.e., silver (Ag), gold (Au), platinum (Pt), palladium (Pd), rhodium (Rh), ruthenium (Ru), iridium (Ir), osmium (Os), or alloy thereof) | 13 |
20080214003 | METHODS FOR FORMING A RUTHENIUM-BASED FILM ON A SUBSTRATE - Methods for forming a film on a substrate in a semiconductor manufacturing process A reaction chamber a substrate in the chamber are provided. A ruthenium based precursor, which includes ruthenium tetroxide dissolved in a mixture of at least two non-flammable fluorinated solvents, is provided and a ruthenium containing film is produced on the substrate. | 09-04-2008 |
20080286968 | SOLDERABLE TOP METAL FOR SILICON CARBIDE SEMICONDUCTOR DEVICES - A silicon carbide device includes at least one power electrode on a surface thereof, a solderable contract formed on the power electrode, and at least one passivation layer that surrounds the solderable contact but is spaced from the solderable contract, thereby forming a gap. | 11-20-2008 |
20080305633 | Manufacturing method of a semiconductor device and substrate processing apparatus - A method of manufacturing a semiconductor device comprises carrying a substrate into a processing chamber, forming a film containing ruthenium on the substrate by supplying a material gas into the processing chamber, carrying the film-formed substrate out of the processing chamber; and cleaning an inside of the processing chamber by executing, alternately plural times, removing deposits containing ruthenium deposited in the processing chamber by supplying a cleaning gas whose molecule has a fluorine atom or a chlorine atom into the processing chamber and exposing surfaces of the deposits by removing a by-product generated so as to cover the surfaces of the deposits in removing the deposits. | 12-11-2008 |
20090011597 | MASS PRODUCTION METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD OF ELECTRONIC DEVICE - In order to prevent the contamination of wafers made of a transition metal in a semiconductor mass production process, the mass production method of a semiconductor integrated circuit device of the invention comprises the steps of depositing an Ru film on individual wafers passing through a wafer process, removing the Ru film from outer edge portions of a device side and a back side of individual wafers, on which said Ru film has been deposited, by means of an aqueous solution containing orthoperiodic acid and nitric acid, and subjecting said individual wafers, from which said Ru film has been removed, to a lithographic step, an inspection step or a thermal treating step that is in common use relation with a plurality of wafers belonging to lower layer steps (an initial element formation step and a wiring step prior to the formation of a gate insulating film). | 01-08-2009 |
20090104777 | METHODS OF DEPOSITING A RUTHENIUM FILM - Cyclical methods of depositing a ruthenium layer on a substrate are provided. In one process, initial or incubation cycles include supplying alternately and/or simultaneously a ruthenium precursor and an oxygen-source gas to deposit ruthenium oxide on the substrate. The ruthenium oxide deposited on the substrate is reduced to ruthenium, thereby forming a ruthenium layer. The oxygen-source gas may be oxygen gas (O | 04-23-2009 |
20090186481 | METHOD FOR INTEGRATING SELECTIVE LOW-TEMPERATURE RUTHENIUM DEPOSITION INTO COPPER METALLIZATION OF A SEMICONDUCTOR DEVICE - A method for integrating low-temperature selective Ru metal deposition into manufacturing of semiconductor devices to improve electromigration and stress migration in bulk Cu metal. The method includes providing a patterned substrate containing a recessed feature in a dielectric layer, where the recessed feature is at least substantially filled with planarized bulk Cu metal, heat-treating the bulk Cu metal and the dielectric layer in the presence of H | 07-23-2009 |
20090209101 | RUTHENIUM ALLOY FILM FOR COPPER INTERCONNECTS - A method for forming interconnect wiring, includes: (i) covering a surface of a connection hole penetrating through interconnect dielectric layers formed on a substrate for interconnect wiring, with an underlying alloy layer selected from the group consisting of an alloy film containing ruthenium (Ru) and at least one other metal atom (M), a nitride film thereof, a carbide film thereof, and an nitride-carbide film thereof, and (ii) filling copper or a copper compound in the connection hole covered with the underlying layer. | 08-20-2009 |
20090286398 | CHEMICAL VAPOR DEPOSITION APPARATUS, FILM FORMING METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - In forming a TiN film on a base material ( | 11-19-2009 |
20090311860 | BLOCKING CONTACTS FOR N-TYPE CADMIUM ZINC TELLURIDE - A process for applying blocking contacts on an n-type CdZnTe specimen includes cleaning the CdZnTe specimen; etching the CdZnTe specimen; chemically surface treating the CdZnTe specimen; and depositing blocking metal on at least one of a cathode surface and an anode surface of the CdZnTe specimen. | 12-17-2009 |
20120045898 | Ru CAP METAL POST CLEANING METHOD AND CLEANING CHEMICAL - According to certain embodiments, Ru is removed from the surface of a semiconductor structure by contact with a cleaning solution comprising one or more selected from permanganate ion, orthoperiodic ion and hypochlorous ion, such that Ru is removed from surfaces of the semiconductor substrate where the presence of Ru is undesirable. In some embodiments, a semiconductor structure is formed or provided having at least one metalized layer formed over an underlying layering or semiconductor substrate. The metalized layer contains a dielectric material with one or more metal wires of copper-containing material formed in a trench and/or via in the dielectric material. A cap layer having Ru is formed on the surface of the copper-containing material forming the one or more metal wires. The semiconductor structure is contacted with the cleaning solution comprising one or more selected from permanganate ion, orthoperiodic ion and hypochlorous ion to remove a portion of the Ru present in the semiconductor structure. | 02-23-2012 |
20120220127 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A manufacturing method of a semiconductor device includes: forming a metal layer having a surface containing gold; growing a first silicon nitride layer in contact with the metal layer by a plasma-enhanced vapor deposition method; growing a second silicon nitride layer in contact with the first silicon nitride layer by a plasma-enhanced vapor deposition method at a layer-forming rate higher than that of the first silicon nitride layer, the second silicon nitride layer having a silicon composition ratio smaller than that of the first silicon nitride layer. | 08-30-2012 |
20120309193 | PALLADIUM PRECURSOR COMPOSITION - A non-catalytic palladium precursor composition is disclosed, including a palladium salt and an organoamine, wherein the composition is substantially free of water. The composition permits the use of solution processing methods to form a palladium layer on a wide variety of substrates, including in a pattern to form circuitry or pathways for electronic devices. | 12-06-2012 |
20140004699 | COMPOSITE MATERIAL, METHOD FOR PRODUCING THE SAME, AND APPARATUS FOR PRODUCING THE SAME | 01-02-2014 |
Patent applications in class Noble group metal (i.e., silver (Ag), gold (Au), platinum (Pt), palladium (Pd), rhodium (Rh), ruthenium (Ru), iridium (Ir), osmium (Os), or alloy thereof)