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Utilizing chemical vapor deposition (i.e., CVD)

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438 - Semiconductor device manufacturing: process

438584000 - COATING WITH ELECTRICALLY OR THERMALLY CONDUCTIVE MATERIAL

438597000 - To form ohmic contact to semiconductive material

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Class / Patent application numberDescriptionNumber of patent applications / Date published
438681000 Of organo-metallic precursor (i.e., MOCVD) 22
Entries
DocumentTitleDate
20080261398Semiconductor device having oxidized metal film and manufacture method of the same - A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.10-23-2008
20100055904METHOD FOR REDUCING TUNGSTEN ROUGHNESS AND IMPROVING REFLECTIVITY - Methods of producing low resistivity tungsten bulk layers having lower roughness and higher reflectivity are provided. The smooth and highly reflective tungsten layers are easier to photopattern than conventional low resistivity tungsten films. The methods involve CVD deposition of tungsten in the presence of alternating nitrogen gas pulses, such that alternating portions of the film are deposited by CVD in the absence of nitrogen and in the presence of nitrogen. According to various embodiments, between 20-90% of the total film thickness is deposited by CVD in the presence of nitrogen.03-04-2010
20110195574NIOBIUM AND VANADIUM ORGANOMETALLIC PRECURSORS FOR THIN FILM DEPOSITION - Compound of the formula Cp(R08-11-2011
20120244703TRAY FOR CVD AND METHOD FOR FORMING FILM USING SAME - A tray for film formation by a CVD method includes a tray main body (09-27-2012
20130084700Method for Selectively Depositing Noble Metals on Metal/Metal Nitride Substrates - A method for forming a noble metal layer by Plasma Enhanced Atomic Layer Deposition (PE-ALD) is disclosed. The method includes providing a substrate in a PE-ALD chamber, the substrate comprising a first region having an exposed first material and a second region having an exposed second material. The first material comprises a metal nitride or a nitridable metal, and the second material comprises a non-nitridable metal or silicon oxide. The method further includes depositing selectively by PE-ALD a noble metal layer on the second region and not on the first region, by repeatedly performing a deposition cycle including (a) supplying a noble metal precursor to the PE-ALD chamber and contacting the noble metal precursor with the substrate in the presence of a carrier gas followed by purging the noble metal precursor, and (b) exposing the substrate to plasma while supplying ammonia and the carrier gas into the PE-ALD chamber.04-04-2013
20090104774METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - This invention relates to a method of manufacturing a semiconductor device. In this method, a semiconductor device is provided comprising a substrate (04-23-2009
20090156002MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE AND MANUFACTURING APPARATUS FOR SEMICONDUCTOR DEVICE - A wafer is placed on a lower electrode disposed in a reaction chamber; process gas is introduced into the reaction chamber; a magnetic field is applied at a position spaced from a surface of the wafer to be processed; plasma is generated by applying a high-frequency voltage between the lower electrode and an upper electrode disposed to face the lower electrode; the magnetic field is removed after the plasma is stabilized; and the wafer is plasma-processed.06-18-2009
20100267235METHODS FOR DEPOSITING ULTRA THIN LOW RESISTIVITY TUNGSTEN FILM FOR SMALL CRITICAL DIMENSION CONTACTS AND INTERCONNECTS - Provided are methods of void-free tungsten fill of high aspect ratio features. According to various embodiments, the methods involve a reduced temperature chemical vapor deposition (CVD) process to fill the features with tungsten. In certain embodiments, the process temperature is maintained at less than about 350° C. during the chemical vapor deposition to fill the feature. The reduced-temperature CVD tungsten fill provides improved tungsten fill in high aspect ratio features, provides improved barriers to fluorine migration into underlying layers, while achieving similar thin film resistivity as standard CVD fill. Also provided are methods of depositing thin tungsten films having low-resistivity. According to various embodiments, the methods involve performing a reduced temperature low resistivity treatment on a deposited nucleation layer prior to depositing a tungsten bulk layer and/or depositing a bulk layer via a reduced temperature CVD process followed by a high temperature CVD process.10-21-2010
20090305504SINGLE PRECURSORS FOR ATOMIC LAYER DEPOSITION - Single precursors for use in flash ALD processes are disclosed. These precursors have the general formula:12-10-2009
20130164936FILM DEPOSITION METHOD - A film deposition method includes a film depositing step of depositing titanium nitride on a substrate mounted on a substrate mounting portion of a turntable, which is rotatably provided in a vacuum chamber, by alternately exposing the substrate to a titanium containing gas and a nitrogen containing gas which is capable of reacting with the titanium containing gas while rotating the turntable; and an exposing step of exposing the substrate on which the titanium nitride is deposited to the nitrogen containing gas, the film depositing step and the exposing step being continuously repeated to deposit the titanium nitride of a desired thickness.06-27-2013
20110014789MANUFACTURING APPARATUS AND METHOD FOR SEMICONDUCTOR DEVICE - There is provided an apparatus for manufacturing a semiconductor device including a chamber in which a wafer is loaded; a gas supply mechanism for supplying process gas into the chamber; a gas discharge mechanism for discharging gas from the chamber; a heater having a slit and for heating the wafer to a predetermined temperature; a push-up base on which the wafer is mounted in an lifted state and housed in the slit in a lower state; a vertical rotation drive control mechanism for moving the push-up base up/down and rotating the push-up base in an lifted state; and a rotating member for rotating the wafer in a predetermined position and a rotation drive control mechanism connected to the rotating member.01-20-2011
20090269926POLYGRAIN ENGINEERING BY ADDING IMPURITIES IN THE GAS PHASE DURING CHEMICAL VAPOR DEPOSITION OF POLYSILICON - A method of forming at least one gate conductor of a complementary metal oxide semiconductor performs a chemical vapor deposition process of polysilicon over a surface where a polysilicon gate is to be located. This deposition can be performed through a mask to form gate structures directly, or a later patterning process can pattern the polysilicon into gate structures. During the chemical vapor deposition process, the method adds impurities in the chemical vapor deposition process to optimize the grain size of the polysilicon according to a number of different methods.10-29-2009
20090233442METHOD AND APPARATUS FOR PRODUCTION OF METAL FILM OR THE LIKE - In a metal film production apparatus, a copper plate member is etched with a Cl09-17-2009
20090011595METHOD OF FORMING A LAYER ON A SEMICONDUCTOR SUBSTRATE AND APPARATUS FOR PERFORMING THE SAME - In a method of forming a thin layer for a semiconductor device through an ALD process and a CVD process in the same chamber, a semiconductor substrate is introduced into a processing chamber, and an interval between a showerhead and the substrate is adjusted to a first gap distance. A first layer is formed on the substrate at a first temperature through an ALD process. The interval between the showerhead and the substrate is additionally adjusted to a second gap distance, and a second layer is formed on the first layer at a second temperature through a CVD process. Accordingly, the thin layer has good current characteristics, and the manufacturing throughput of a semiconductor device is improved.01-08-2009
20100087064METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - The present inventors have found that a wafer process of VLSI (Very Large Scale Integration) has the following problem, that is, generation of foreign matters due to moisture from a wafer as a result of degassing when a barrier metal film or a first-level metal interconnect layer is formed by sputtering as a preliminary step for the formation of a tungsten plug in a pre-metal step. To overcome the problem, the present invention provides a manufacturing method of a semiconductor integrated circuit device including, in a plasma process, in-situ monitoring of moisture in a processing chamber by receiving an electromagnetic wave generated from plasma.04-08-2010
20120108061SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A substrate processing apparatus includes a processing chamber configured to process a substrate having a front surface including a dielectric, a substrate support member provided within the processing chamber to support the substrate, a microwave supplying unit configured to supply a microwave to a front surface side of the substrate supported on the substrate support member; and a conductive substrate cooling unit which is provided at a rear surface side of the substrate supported on the substrate support member and has an opposing surface facing the rear surface of the substrate. A distance between the top of the substrate support member and the opposing surface of the substrate cooling unit corresponds to an odd multiple of ¼ wavelength of the microwave supplied when the substrate is processed.05-03-2012
20100112814PRE-CERTIFIED PROCESS CHAMBER AND METHOD - The present invention relates generally to the field of semiconductor device manufacturing and more specifically to the manufacture and certification of semiconductor processing equipment. Systems and methods are described that establish a baseline contamination levels at each stage of the manufacture, assembly, testing, and installation of a process chamber.05-06-2010
20100184290SUBSTRATE SUPPORT WITH GAS INTRODUCTION OPENINGS - Embodiments disclosed herein generally relate to an apparatus and a method for placing a substrate substantially flush against a substrate support in a processing chamber. When a large area substrate is placed onto a substrate support, the substrate may not be perfectly flush against the substrate support due to gas pockets that may be present between the substrate and the substrate support. The gas pockets can lead to uneven deposition on the substrate. Therefore, pulling the gas from between the substrate and the support may pull the substrate substantially flush against the support. During deposition, an electrostatic charge can build up and cause the substrate to stick to the substrate support. By introducing a gas between the substrate and the substrate support, the electrostatic forces may be overcome so that the substrate can be separated from the susceptor with less or no plasma support which takes extra time and gas.07-22-2010
20090061629METHOD OF FORMING A METAL DIRECTLY ON A CONDUCTIVE BARRIER LAYER BY ELECTROCHEMICAL DEPOSITION USING AN OXYGEN-DEPLETED AMBIENT - By suppressing the presence of free oxygen during a cleaning process and a subsequent electrochemical deposition of a seed layer, the quality of a corresponding interface between the barrier material and the seed layer may be enhanced, thereby also improving performance and the characteristics of the finally obtained metal region. Thus, by identifying free oxygen as a main source for negatively affecting the characteristics of metals during a “direct on barrier” plating process, efficient strategies have been developed and are disclosed herein to provide a reliable technique for volume production of sophisticated semiconductor devices.03-05-2009
20100087063NANOMETER-SCALE ELECTROMECHANICAL SWITCH AND FABRICATION PROCESS - The present invention describes nano-scale fabrication technique used to create a sub-micron wide gap across the center conductor of a coplanar waveguide transmission line configured in a fixed-fixed beam arrangement, resulting in a pair of opposing cantilever beams that comprise an electro-mechanical switch. Accordingly, a nanometer-scale mechanical switch with very high switching speed and low actuation voltage has been developed. This switch is intended primarily for application in the RF/microwave/wireless industry.04-08-2010
20090286397SELECTIVE INDUCTIVE DOUBLE PATTERNING - An inductively coupled power (ICP) plasma processing chamber for forming semiconductor features is provided. A plasma processing chamber is provided, comprising a vacuum chamber, at least one antenna adjacent to the vacuum chamber for providing inductively coupled power in the vacuum chamber, a substrate support for supporting a silicon substrate within the plasma processing chamber, a pressure regulator, a gas inlet for providing gas into the plasma processing chamber, and a gas outlet for exhausting gas from the plasma processing chamber. A gas distribution system is in fluid connection with the gas inlet for providing a first gas and a second gas, wherein the gas distribution system can substantially replace one of the first gas and the second gas in the plasma zone with the other of the first gas and the second gas within a period of less than 5 seconds.11-19-2009
20090291557MICROREACTOR FOR SOLUTION DEPOSITION AND METHOD OF USE - A novel microreactor producing customized deposition products and a method for optimizing the deposition process. The microreactor has a unique design with high surface-to-volume ratio that produces high deposition yield with a minimal amount of waste. The invention may be particularly applicable to the field of optoelectronics and photovoltaics.11-26-2009
20080242085Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses - Showerhead electrodes for a semiconductor material processing apparatus are disclosed. An embodiment of the showerhead electrodes includes top and bottom electrodes bonded to each other. The top electrode includes one or more plenums. The bottom electrode includes a plasma-exposed bottom surface and a plurality of gas holes in fluid communication with the plenum. Showerhead electrode assemblies including a showerhead electrode flexibly suspended from a top plate are also disclosed. The showerhead electrode assemblies can be in fluid communication with temperature-control elements spatially separated from the showerhead electrode to control the showerhead electrode temperature. Methods of processing substrates in plasma processing chambers including the showerhead electrode assemblies are also disclosed.10-02-2008
20080280438METHODS FOR DEPOSITING TUNGSTEN LAYERS EMPLOYING ATOMIC LAYER DEPOSITION TECHNIQUES - In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer. In one example, the barrier layer contains titanium nitride, the first and second soak processes independently comprise at least one reducing gas selected from the group consisting of hydrogen, silane, disilane, dichlorosilane, borane, diborane, derivatives thereof and combinations thereof and the nucleation layer may be deposited by an atomic layer deposition process or a pulsed chemical vapor deposition process while the bulk layer may be deposited by a chemical vapor deposition process or a physical vapor deposition process.11-13-2008
20080311745High Temperature Processing Compatible Metal Gate Electrode For pFETS and Methods For Fabrication - A method for fabricating a CMOS gate electrode by using Re, Rh, Pt, Ir or Ru metal and a CMOS structure that contains such gate electrodes are described. The work functions of these metals make them compatible with current pFET requirements. For instance, the metal can withstand the high hydrogen pressures necessary to produce properly passivated interfaces without undergoing chemical changes. The thermal stability of the metal on dielectric layers such as SiO12-18-2008
20090298287METHOD OF PLASMA LOAD IMPEDANCE TUNING FOR ENGINEERED TRANSIENTS BY SYNCHRONIZED MODULATION OF AN UNMATCHED LOW POWER RF GENERATOR - A method is provided in plasma processing of a workpiece for stabilizing the plasma against engineered transients in applied RF power, by modulating an unmatched low power RF generator in synchronism with the transient.12-03-2009
20090186479Semiconductor processing system including vaporizer and method for using same - A semiconductor processing system including a semiconductor processing apparatus and a gas supply apparatus for supplying a process gas into the semiconductor processing apparatus includes a control section configured to control an operation of a pressure adjusting mechanism for adjusting the pressure inside a vaporizing chamber. The control section is preset to cause the pressure inside the vaporizing chamber to fall within a predetermined pressure range with reference to a pressure detection value obtained by a pressure detector. The predetermined pressure range is defined by an upper limit lower than a first limit value, at which vaporization of the liquid material starts being inhibited due to an increase in the pressure, and a lower limit higher than a second limit value, at which vaporization of the liquid material starts being unstable and the pressure inside the vaporizing chamber starts pulsating movement due to a decrease in the pressure.07-23-2009
20090004858TANTALUM AMIDE COMPLEXES FOR DEPOSITING TANTALUM-CONTAINING FILMS, AND METHOD OF MAKING SAME - Tantalum precursors useful in depositing tantalum nitride or tantalum oxides materials on substrates, by processes such as chemical vapor deposition and atomic layer deposition. The precursors are useful in forming tantalum-based diffusion barrier layers on microelectronic device structures featuring copper metallization and/or ferroelectric thin films.01-01-2009
20090098733METHOD OF FORMING METAL LAYER USED IN THE FABRICATION OF SEMICONDUCTOR DEVICE - A method of forming a metal layer on the conductive region of a semiconductor device includes concurrently supplying a mixture gas including a hydrogen gas and a metal chloride compound gas, and a purge gas into a chamber having a sealed space for a predetermined time, thereby forming a first metal layer on the semiconductor substrate, using a plasma enhanced chemical vapor deposition (PECVD) method. The hydrogen gas and metal chloride gases are thereafter alternately supplied for a predetermined time while the purge gas is continuously supplied into the chamber, thereby forming a second metal layer on the first metal layer, using a PECVD method. Deterioration of semiconductor devices due to high heat by a conventional CVD method can be prevented using a PECVD method as a low temperature process, thereby improving a production yield.04-16-2009
20090053893ATOMIC LAYER DEPOSITION OF TUNGSTEN MATERIALS - Embodiments of the invention provide an improved process for depositing tungsten-containing materials. The process utilizes soak processes and vapor deposition processes, such as atomic layer deposition (ALD) to provide tungsten films having significantly improved surface uniformity and production level throughput. In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes positioning a substrate within a process chamber, wherein the substrate contains an underlayer disposed thereon, exposing the substrate sequentially to a tungsten precursor and a reducing gas to deposit a tungsten nucleation layer on the underlayer during an ALD process, wherein the reducing gas contains a hydrogen/hydride flow rate ratio of about 40:1, 100:1, 500:1, 800:1, 1,000:1, or greater, and depositing a tungsten bulk layer on the tungsten nucleation layer. The reducing gas contains a hydride compound, such as diborane, silane, or disilane.02-26-2009
20100273326METHOD FOR PURIFYING UNSATURATED FLUOROCARBON COMPOUND, METHOD FOR FORMING FLUOROCARBON FILM, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE - A method for purifying an unsaturated fluorocarbon compound includes causing a crude unsaturated fluorocarbon compound shown by the formula C10-28-2010
20090142925METHOD FOR FORMING TUNGSTEN FILM HAVING LOW RESISTIVITY AND GOOD SURFACE ROUGHNESS AND METHOD FOR FORMING WIRING OF SEMICONDUCTOR DEVICE USING THE SAME - A method for forming a tungsten film includes forming a tungsten nucleation layer having an amorphous-phase or a β-phase over a semiconductor substrate. A first tungsten layer having a crystalline α-phase is then formed over the tungsten nucleation layer to form a low resistivity tungsten film. A second tungsten layer is formed over the first tungsten layer by a physical vapor deposition process, and the second tungsten layer has a large grain size similar to that of the low resistivity tungsten film. The tungsten film has both good surface roughness and low resistivity, thus enhancing the production yield and reliability of a semiconductor device.06-04-2009
20100151682METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - Formation of a boron (B) compound is suppressed on the inner wall of a nozzle disposed in a high-temperature region of a process chamber. A semiconductor device manufacturing method comprises forming a boron (B)-doped silicon film by simultaneously supplying at least a gas containing boron (B) as a constituent element and a gas containing chlorine (Cl) as a constituent element to a gas supply nozzle installed in a process chamber in a manner such that concentration of chlorine (Cl) is higher than concentration of boron (B) in the gas supply nozzle.06-17-2010
20100151681TITANIUM SILICON NITRIDE DEPOSITION - Titanium silicon nitride (TiSiN) films are formed in a cyclic chemical vapor deposition process. In some embodiments, the TiSiN films are formed in a batch reactor using TiCl06-17-2010
20100216306PROTECTION OF CONDUCTORS FROM OXIDATION IN DEPOSITION CHAMBERS - In some embodiments, after depositing conductive material on substrates in a deposition chamber, a reducing gas is introduced into as the chamber in preparation for unloading the substrates. The deposition chamber can be a batch CVD chamber and the deposited material can be a metal nitride, e.g., a transition metal nitride such as titanium metal nitride. As part of the preparation for unloading substrates from the chamber, the substrates may be cooled and the chamber is backfilled with a reducing gas to increase the chamber pressure. It has been found that oxidants can be introduced into the chamber during this time. The introduction of a reducing gas has been found to protect exposed metal-containing films from oxidation during the backfill and/or cooling process. The reducing gas is formed of a reducing agent and a carrier gas, with the reducing agent being a minority component of the reducing gas. By providing a reducing agent, the effects of oxidation on exposed metal-containing films is reduced, therefore enhancing the conductive properties of the metal films.08-26-2010
20100240216FILM FORMATION METHOD AND APPARATUS UTILIZING PLASMA CVD - A film formation method to form a predetermined thin film on a target substrate includes first and second steps alternately performed each at least once. The first step is arranged to generate first plasma within a process chamber that accommodates the substrate while supplying a compound gas containing a component of the thin film and a reducing gas into the process chamber. The second step is arranged to generate second plasma within the process chamber while supplying the reducing gas into the process chamber, subsequently to the first step.09-23-2010
20100221914COMPOSITION AND METHOD FOR LOW TEMPERATURE DEPOSITION OF SILICON-CONTAINING FILMS - This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <300° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least one disilane derivative compound that is fully substituted with alkylamino and/or dialkylamino functional groups.09-02-2010
20100297846Method of manufacturing a semiconductor device and substrate processing apparatus - A method of manufacturing a semiconductor device includes the steps of: forming a first metal film on the substrate placed in a processing chamber by alternately supplying at least one type of a metal compound that is an inorganic raw material and a reactant gas that has reactivity to the metal compound to the processing chamber more than once; forming a second metal film on the substrate by simultaneously supplying at least one type of a metal compound that is an inorganic raw material and a reactant gas that has reactivity to the metal compound to the processing chamber once so that the metal compound and the reactant gas are mixed with each other; and modifying at least one of the first metal film and the second metal film is modified using at least one of the reactant gas and an inert gas after at least one of the alternate supply process and the simultaneous supply process. It thus becomes possible to provide a dense, low-resistive metal film having a smooth film surface with a better quality in comparison with a titanium nitride film formed by the CVD method at a higher deposition rate, that is, at a higher productivity, in comparison with a titanium nitride film formed by the ALD method at a low temperature.11-25-2010
20100304567Method of manufacturing a semiconductor device and substrate processing apparatus - A TiN film is formed by a first step of forming a TiN intermediate film on a wafer by supplying TiCl12-02-2010
20110008963METHOD FOR MAKING CONDUCTIVE FILM AND FILM MAKING EQUIPMENT - The disclosure discloses a method for making a conductive film and a film making equipment. The method includes providing a substrate having two opposite straight sides, a first side connecting the straight sides, and a second side connecting the straight sides and opposite to the first side. A film layer structure is formed on the substrate. A conductive film is formed by pulling out the film layer structure through the first side of the substrate.01-13-2011
20100144145SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - When a step is delayed, an operator can be rapidly informed of the delay. A substrate processing apparatus comprises a process system configured to process a substrate, a control unit configured to control the process system for performing a plurality of steps, and a manipulation unit configured to monitor progresses of the steps. While the control unit waits for completion of a predetermined one of the steps after the control unit controls the process system to start the predetermined step, if a time elapsing from the start of the predetermined step exceeds an allowable time previously allocated to each of the steps, the control unit transmits an alarm message to the manipulation unit so as to report that the allowable time is exceeded.06-10-2010
20100227476ATOMIC LAYER DEPOSITION PROCESSES - This invention relates to method of forming a thin film on a substrate in a reaction chamber by an atomic layer deposition process comprising a plurality of individual cycles. The plurality of individual cycles comprise at least two groupings of individual cycles. The individual cycles comprise (i) introducing a gaseous metal containing precursor into the reaction chamber and exposing the substrate to the gaseous metal containing precursor, wherein at least a portion of the metal containing precursor is chemisorbed onto the surface of the substrate to form a monolayer thereon, (ii) stopping introduction of the metal containing precursor and purging the volume of the reaction chamber; (iii) introducing a gaseous oxygen source compound into the reaction chamber and exposing the monolayer to the gaseous oxygen source compound, wherein at least a portion of the oxygen source compound chemically reacts with the monolayer; and (iv) stopping introduction of the oxygen source compound and purging the volume of the reaction chamber. The method involves repeating the individual cycles until a thin film of desired thickness is obtained. The method also involves carrying out at least two groupings of individual cycles at different process conditions. The methods are useful for producing a thin film on a semiconductor substrate, particularly metal containing thin films for electrode applications in microelectronics.09-09-2010
20110244682ATOMIC LAYER DEPOSITION OF TUNGSTEN MATERIALS - Embodiments of the invention provide a method for depositing tungsten-containing materials. In one embodiment, a method includes forming a tungsten nucleation layer over an underlayer disposed on the substrate while sequentially providing a tungsten precursor and a reducing gas into a process chamber during an atomic layer deposition (ALD) process and depositing a tungsten bulk layer over the tungsten nucleation layer, wherein the reducing gas contains hydrogen gas and a hydride compound (e.g., diborane) and has a hydrogen/hydride flow rate ratio of about 500:1 or greater. In some examples, the method includes flowing the hydrogen gas into the process chamber at a flow rate within a range from about 1 slm to about 20 slm and flowing a mixture of the hydride compound and a carrier gas into the process chamber at a flow rate within a range from about 50 sccm to about 500 sccm.10-06-2011
20110244681METHOD OF FORMING A TANTALUM-CONTAINING LAYER ON A SUBSTRATE - A method for forming a tantalum-containing layer on a substrate, the method comprising at least the steps of: 10-06-2011
20110250753Atomic Layer Deposition Methods - An atomic layer deposition method includes providing a semiconductor substrate within a deposition chamber. A first metal halide-comprising precursor gas is flowed to the substrate within the chamber effective to form a first monolayer on the substrate. The first monolayer comprises metal and halogen of the metal halide. While flowing the first metal halide-comprising precursor gas to the substrate, H10-13-2011
20090186480Optical article - An optical article and method of making the same are provided. The optical article has optical multi-aperture operation. The optical article has one or more electrically conductive and selectively passivated patterns.07-23-2009
20080305632SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND STORAGE MEDIUM - A substrate processing apparatus is provided to enable to efficiently remove an oxide layer and an organic material layer. A third process unit (12-11-2008
20080305631METHOD FOR FORMING ELECTRODE STRUCTURE FOR USE IN LIGHT EMITTING DEVICE AND METHOD FOR FORMING STACKED STRUCTURE - A method for forming an electrode structure in a light emitting device is disclosed. The method includes the steps of: forming a mask material layer having an opening; depositing a first material layer on the mask material layer and on a portion of a compound semiconductor layer exposed through the bottom of the opening by a physical vapor deposition method reducing the particle density so that the mean free path for collision is long; depositing a second material layer on the first material layer on the mask material layer, on the first material layer deposited on the bottom of the opening, and on a portion of the compound semiconductor layer exposed through the bottom of the opening by a vapor deposition method other than the physical vapor deposition method; and removing the mask material layer and the first and second material layers deposited on the mask material layer.12-11-2008
20080242086PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS - A plasma processing method, for performing a plasma process on a target substrate by generating a plasma between an upper electrode and a lower electrode facing each other by means of applying a radio frequency power therebetween, includes applying a DC voltage of a positive or negative polarity to an inner electrode of an electrostatic chuck on the lower electrode to attract and hold the target substrate thereon; and changing the positive or negative polarity of the DC voltage applied to the inner electrode of the electrostatic chuck to an opposite polarity thereto between a time when the application of the radio frequency power from the radio frequency power supply is started to perform the plasma process of the target substrate and a time when the plasma process is completed.10-02-2008
20110027991Interconnect Structure for Semiconductor Devices - A cap layer for a copper interconnect structure formed in a first dielectric layer is provided. In an embodiment, the cap layer may be formed by an in-situ deposition process in which a process gas comprising germanium, arsenic, tungsten, or gallium is introduced, thereby forming a copper-metal cap layer. In another embodiment, a copper-metal silicide cap is provided. In this embodiment, silane is introduced before, during, or after a process gas is introduced, the process gas comprising germanium, arsenic, tungsten, or gallium. Thereafter, an optional etch stop layer may be formed, and a second dielectric layer may be formed over the etch stop layer or the first dielectric layer.02-03-2011
20100285664COMPOSITION AND METHODS FOR FORMING METAL FILMS ON SEMICONDUCTOR SUBSTRATES USING SUPERCRITICAL SOLVENTS - Compositions and methods for forming metal films on semiconductor substrates are disclosed. One of the disclosed methods comprises: heating the semiconductor substrate to obtain a heated semiconductor substrate; exposing the heated semiconductor substrate to a composition containing at least one metal precursor comprising at least one ligand, an excess amount of neutral labile ligands, a supercritical solvent, and optionally at least one source of B, C, N, Si, P, and mixtures thereof; exposing the composition to a reducing agent and/or thermal energy at or near the heated semiconductor substrate; disassociating the at least one ligand from the metal precursor; and forming the metal film while minimizing formation of metal oxides.11-11-2010
20110136343COMPOSITION AND METHOD FOR LOW TEMPERATURE DEPOSITION OF SILICON-CONTAINING FILMS - This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <300° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least one disilane derivative compound that is fully substituted with alkylamino and/or dialkylamino functional groups.06-09-2011
20100167541METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, CLEANING METHOD AND CLEANING CONTROL APPARATUS - Efficient cleaning is possible although the film qualities and thicknesses of a reaction tube and a gas supply nozzle are different. There is provided a method of manufacturing a semiconductor device. The method includes forming a film on a substrate, performing a first cleaning process to remove a first deposition substance attached to an inner wall of a gas introducing part, and performing a second cleaning process to remove a second deposition substance attached to an inside of a process chamber and having a chemical composition different from that of the first deposition substance. In the first cleaning process, cleaning conditions are set according to the accumulated supply time of a first process gas supplied to the inside of the process chamber through the gas introducing part, and in the second cleaning process, cleaning conditions are set according to the accumulated thickness of a film formed on the substrate.07-01-2010
20090197409SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a substrate processing apparatus. The substrate processing apparatus comprises a reaction tube; a heating device configured to heat the reaction tube; and a manifold installed outward as compared with the heating device and made of a nonmetallic material. A first thickness of the manifold defined in a direction perpendicular to a center axis of the reaction tube is greater than a second thickness of the manifold defined at a position adjacent to the reaction tube in a direction parallel to the center axis of the reaction tube. The manifold comprises a protrusion part of which at least a portion protrudes inward more than an inner wall of the reaction tube, and a gas supply unit disposed at at least the protrusion part for supplying gas to an inside of the reaction tube.08-06-2009
20080268642DEPOSITION OF TRANSITION METAL CARBIDE CONTAINING FILMS - Methods and compositions for the deposition of a transition metal containing film in a semiconductor manufacturing process. A first vaporized metal precursor is introduced into a reaction chamber along with a second precursor mixture which comprises at least one carbon source. The reaction chamber contains at least one substrate, and a metal containing film is formed on the substrate through a deposition process10-30-2008
20120003833METHODS FOR FORMING TUNGSTEN-CONTAINING LAYERS - Methods for forming tungsten-containing layers on substrates are provided herein. In some embodiments, a method for forming a tungsten-containing layer on a substrate disposed in a process chamber may include mixing hydrogen and a hydride to form a first process gas; introducing the first process gas to the process chamber; exposing the substrate in the process chamber to the first process gas for a first period of time to form a conditioned substrate surface; subsequently purging the process chamber of the first process gas; exposing the substrate to a second process gas comprising a tungsten precursor for a second period of time to form a tungsten-containing nucleation layer atop the conditioned substrate surface; and subsequently purging the process chamber of the second process gas.01-05-2012
20120015518METHOD FOR DEPOSITING THIN TUNGSTEN FILM WITH LOW RESISTIVITY AND ROBUST MICRO-ADHESION CHARACTERISTICS - Methods of forming low resistivity tungsten films with good uniformity and good adhesion to the underlying layer are provided. The methods involve forming a tungsten nucleation layer using a pulsed nucleation layer process at low temperature and then treating the deposited nucleation layer prior to depositing the bulk tungsten fill. The treatment operation lowers resistivity of the deposited tungsten film. In certain embodiments, the depositing the nucleation layer involves a boron-based chemistry in the absence of hydrogen. Also in certain embodiments, the treatment operations involve exposing the nucleation layer to alternating cycles of a reducing agent and a tungsten-containing precursor. The methods are useful for depositing films in high aspect ratio and/or narrow features. The films exhibit low resistivity at narrow line widths and excellent step coverage.01-19-2012
20120064719METHOD AND COMPOSITION FOR DEPOSITING RUTHENIUM WITH ASSISTIVE METAL SPECIES - A method of forming a ruthenium-containing film in a vapor deposition process, including depositing ruthenium with an assistive metal species that increases the rate and extent of ruthenium deposition in relation to deposition of ruthenium in the absence of such assistive metal species. An illustrative precursor composition useful for carrying out such method includes a ruthenium precursor and a strontium precursor in a solvent medium, wherein one of the ruthenium and strontium precursors includes a pendant functionality that coordinates with the central metal atom of the other precursor, so that ruthenium and strontium co-deposit with one another. The method permits incubation time for ruthenium deposition on non- metallic substrates to be very short, thereby accommodating very rapid film formation in processes such as atomic layer deposition.03-15-2012
20110092070METHOD FOR FILM FORMATION, APPARATUS FOR FILM FORMATION, AND COMPUTER-READABLE RECORDING MEDIUM - Disclosed is a method for film formation, characterized by comprising allowing a treatment gas stream containing a metal carbonyl-containing treatment gas and a carbon monoxide-containing carrier gas to flow into a region on the upper outside of the outer periphery of a substrate to be treated in a diameter direction of the substrate while avoiding the surface of the substrate and diffusing the metal carbonyl from the treatment gas stream into the surface of the substrate to form a metal film on the surface of the substrate.04-21-2011
20110104896METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - There are provided a method of manufacturing a semiconductor device and a substrate processing apparatus, which are designed to prevent deterioration of the surface morphology of a Ni-containing film caused by dependence on an under layer, and to form a continuous film in a thin-film region. The method includes: loading a substrate into a process vessel; heating the substrate in the process vessel; pretreating the heated substrate by supplying a reducing gas into the process vessel and exhausting the reducing gas; removing the reducing gas remaining in the process vessel by supplying an inert gas into the process vessel and exhausting the inert gas; forming a nickel-containing film on the heated and pretreated substrate to a predetermined thickness by supplying a nickel-containing source into the process vessel and exhausting the nickel-containing source; and unloading the substrate from the process vessel.05-05-2011
20100093170METHOD FOR FORMING TUNGSTEN MATERIALS DURING VAPOR DEPOSITION PROCESSES - In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method further provides exposing the substrate to a deposition gas comprising hydrogen gas and the tungsten precursor gas to form a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples are provided which include ALD and CVD processes that may be conducted in the same deposition chamber or in different deposition chambers.04-15-2010
20110183519METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - A method of manufacturing a semiconductor device and a substrate processing apparatus capable of providing a TiN film that is higher in quality than a TiN film formed by a conventional CVD method at a higher film-forming rate, that is, with a higher productivity than a TiN film formed by an ALD method. The method includes steps of: (a) loading a substrate into a processing chamber; (b) forming a predetermined film on the substrate by simultaneously supplying the first processing gas and the second processing gas into the processing chamber; (c) stopping the supply of the first processing gas and the second processing gas and removing the first processing gas and the second processing gas remaining in the processing chamber; (d) modifying the film formed on the substrate by supplying the second processing gas into the processing chamber after the step (c); and (e) unloading the substrate from the processing chamber, wherein, in the step (b), a time period for supplying the second processing gas into the processing chamber is longer than a time period for supplying the first processing gas into the processing chamber.07-28-2011
20120164832METHOD FOR DEPOSITING TUNGSTEN FILM HAVING LOW RESISTIVITY, LOW ROUGHNESS AND HIGH REFLECTIVITY - Top-down methods of increasing reflectivity of tungsten films to form films having high reflectivity, low resistivity and low roughness are provided. The methods involve bulk deposition of tungsten followed by a removing a top portion of the deposited tungsten. In particular embodiments, removing a top portion of the deposited tungsten involve exposing it to a fluorine-containing plasma. The methods produce low resistivity tungsten bulk layers having lower roughness and higher reflectivity. The smooth and highly reflective tungsten layers are easier to photopattern than conventional low resistivity tungsten films. Applications include forming tungsten bit lines.06-28-2012
20100273327METHOD FOR IMPROVING UNIFORMITY AND ADHESION OF LOW RESISTIVITY TUNGSTEN FILM - Methods of improving the uniformity and adhesion of low resistivity tungsten films are provided. Low resistivity tungsten films are formed by exposing the tungsten nucleation layer to a reducing agent in a series of pulses before depositing the tungsten bulk layer. According to various embodiments, the methods involve reducing agent pulses with different flow rates, different pulse times and different interval times.10-28-2010
20100291769ALTERNATIVE METHODS FOR FABRICATION OF SUBSTRATES AND HETEROSTRUCTURES MADE OF SILICON COMPOUNDS AND ALLOYS - The present invention relates to alternative methods for the production of crystalline silicon compounds and/or alloys such as silicon carbide layers and substrates. In one embodiment, a method of the present invention comprises heating a porous silicon deposition surface of a porous silicon substrate to a temperature operable for epitaxial deposition of at least one atom or molecule, contacting the porous silicon deposition surface with a reactive gas mixture comprising at least one chemical species comprising a group IV element and at least one silicon chemical species, and depositing a silicon-group IV element layer on the porous silicon deposition surface. In another embodiment, the chemical species comprising a group IV element can be replaced with a transition metal species to form a silicon silicide layer.11-18-2010
20110003477METHODS OF FORMING A SEMICONDUCTOR DEVICE INCLUDING A METAL SILICON NITRIDE LAYER - Provided are methods of forming a semiconductor device. The methods include providing a first precursor and a substitute gas into a reaction chamber having a substrate therein, the first precursor having a first substituent and further providing a second precursor into the reaction chamber. Either the first precursor or the second precursor includes a metal element and the other includes a silicon element, at least one of the first substituents of the first precursor are substituted with the substitute gas, the first precursor substituted with the substitute gas is adsorbed onto the substrate, and the second precursor is reacted with the adsorbed first precursor.01-06-2011
20130012022METHOD FOR FABRICATING SILICON NANOWIRE ARRAYS - A method for larger-area fabrication of uniform silicon nanowire arrays is disclosed. The method includes forming a metal layer with a predetermined thickness on a substrate whose surface has a silicon material by a coating process, the metal layer selected from the group consisting of Ag, Au and Pt; and performing a metal-induced chemical etching for the silicon material by using an etching solution. Accordingly, a drawback that Ag nanoparticles are utilized to perform the metal-induced chemical etching in prior art is solved.01-10-2013
20100151680Substrate carrier with enhanced temperature uniformity - A substrate carrier is used in an in-line fabrication such as Plasma Enhanced Chemical Vapor Deposition (PECVD) for application of thin film on substrates. The carrier is in thermal communication with the substrate and thereby provides heat sinking. The carrier further permits movement of the substrate past a deposition apparatus at a deposition station.06-17-2010
20100130009SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device, in which shape variations of discharge electrodes can be early detected so as to prevent a film having anon-uniform thickness from being formed on a substrate. The substrate processing apparatus includes a process chamber configured to stack a plurality of substrates therein, a gas supply unit configured to supply gas to an inside of the process chamber, at least one pair of electrodes installed in the process chamber and configured to receive high-frequency power to generate plasma that excites the gas supplied to the inside of the process chamber, and a monitoring system configured to monitor a shape variation of the electrodes.05-27-2010
20120149194Substrate Support with Gas Introduction Openings - Embodiments disclosed herein generally relate to an apparatus and a method for placing a substrate substantially flush against a substrate support in a processing chamber. When a large area substrate is placed onto a substrate support, the substrate may not be perfectly flush against the substrate support due to gas pockets that may be present between the substrate and the substrate support. The gas pockets can lead to uneven deposition on the substrate. Therefore, pulling the gas from between the substrate and the support may pull the substrate substantially flush against the support. During deposition, an electrostatic charge can build up and cause the substrate to stick to the substrate support. By introducing a gas between the substrate and the substrate support, the electrostatic forces may be overcome so that the substrate can be separated from the susceptor with less or no plasma support which takes extra time and gas.06-14-2012
20090104775Method for Forming Tantalum Nitride Film - A tantalum nitride film rich in tantalum atoms is formed, according to the CVD technique, by simultaneously introducing a raw gas consisting of a coordination compound constituted by an elemental tantalum (Ta) having a coordinated ligand represented by the general formula: N=(R, R′) (in the formula, R and R′ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms) and NH04-23-2009
20110256721RUTHENIUM-CONTAINING PRECURSORS FOR CVD AND ALD - Disclosed are ruthenium-containing precursors and methods of using the same in CVD and ALD.10-20-2011
20100285663COMPOSITION AND METHOD FOR LOW TEMPERATURE DEPOSITION OF SILICON-CONTAINING FILMS SUCH AS FILMS INCLUDING SILICON, SILICON NITRIDE, SILICON DIOXIDE AND/OR SILICON-OXYNITRIDE - Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si11-11-2010
20110300709METHOD OF SEMICONDUCTOR WAFER BACK PROCESSING, METHOD OF SUBSTRATE BACK PROCESSING, AND RADIATION-CURABLE PRESSURE-SENSITIVE ADHESIVE SHEET - The present invention relates to a method of semiconductor wafer back processing, which includes applying a radiation-curable pressure-sensitive adhesive sheet comprising a base film and a pressure-sensitive adhesive layer disposed on one side of the base film to a front side of a semiconductor wafer, the front side of the semiconductor wafer having recesses and protrusions; grinding the back side of the semiconductor wafer in such a state that the radiation-curable pressure-sensitive adhesive sheet is adherent to the front side of the semiconductor; and irradiating the pressure-sensitive adhesive sheet with a radiation to thereby cure the pressure-sensitive adhesive layer, followed by subjecting said ground back side of the semiconductor wafer to a surface treatment; and a radiation-curable pressure-sensitive adhesive sheet for use in the method of semiconductor wafer back processing.12-08-2011
20130189840METHODS FOR FORMING A CONTACT METAL LAYER IN SEMICONDUCTOR DEVICES - Methods for forming a contact metal layer in a contact structure in semiconductor devices are provided in the present invention. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device includes pulsing a deposition precursor gas mixture to a surface of a substrate disposed in a metal deposition processing chamber, pulsing a purge gas mixture to an edge of the substrate, wherein the purge gas mixture includes at least a hydrogen containing gas and an inert gas, and forming a contact metal layer on the substrate from the first deposition precursor gas mixture.07-25-2013

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