Entries |
Document | Title | Date |
20080233723 | PLASMA DOPING METHOD AND APPARATUS - There are provided a plasma doping method and an apparatus which have excellent reproducibility of the concentration of impurities implanted into the surfaces of samples. In a vacuum container, in a state where gas is ejected toward a substrate placed on a sample electrode through gas ejection holes provided in a counter electrode, gas is exhausted from the vacuum container through a turbo molecular pump as an exhaust device, and the inside of the vacuum container is maintained at a predetermined pressure through a pressure adjustment valve, the distance between the counter electrode and the sample electrode is set to be sufficiently small with respect to the area of the counter electrode to prevent plasma from being diffused outward, and capacitive-coupled plasma is generated between the counter electrode and the sample electrode to perform plasma doping. The gas used herein is a gas with a low concentration which contains impurities such as diborane or phosphine. | 09-25-2008 |
20080242065 | CONTROL OF ION ANGULAR DISTRIBUTION FUNCTION AT WAFER SURFACE - A manufacturing method and apparatus for IC fabrication controls the ion angular distribution at the surface of a wafer with electrodes in a wafer support that produce electric fields parallel to the wafer surface without disturbing plasma parameters beyond the wafer surface. The ion angular distribution function (IADF) at the wafer surface is controlled for better feature coverage or etching. Grid structure is built into the substrate holder within the coating at the top of the holder. The grid components are electrically biased to provide electric fields that combine with the sheath field to distribute the ion incidence angles from the plasma sheath onto the wafer. The grid can be dynamically biased or phased to control uniformity of the effects. | 10-02-2008 |
20080254602 | METHOD OF IMPURITY INTRODUCTION AND - A method of introducing an impurity into a wafer surface is provided. The method comprises the steps of: low energy implantation of impurity into a surface of the wafer to generate an implanted dopant layer; and simultaneously removing an implanted surface of the implanted dopant layer to generate a doping profile with controlled areal impurity dosage. | 10-16-2008 |
20080293225 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device including a first conductive type impurity region formed by introducing a first conductive type impurities in a first region of a semiconductor region and heating the first region, a second conductive type impurity region formed by introducing a second conductive type impurities in a second region of the semiconductor region and heating the second region, the method including covering the second region with a mask and then introducing the first conductive type impurities in a surface of the first region, removing the mask by a process using gas including oxygen while forming an oxide film on the surface of the first region by the processing using the gas including the oxygen, and introducing the second conductive type impurities in a surface of the second region by using the oxide film as a mask. | 11-27-2008 |
20080299749 | CLUSTER ION IMPLANTATION FOR DEFECT ENGINEERING - A method of semiconductor manufacturing is disclosed in which doping is accomplished by the implantation of ion beams formed from ionized molecules, and more particularly to a method in which molecular and cluster dopant ions are implanted into a substrate with and without a co-implant of non-dopant cluster ion, such as a carbon cluster ion, wherein the dopant ion is implanted into the amorphous layer created by the co-implant in order to reduce defects in the crystalline structure, thus reducing the leakage current and improving performance of the semiconductor junctions. Dopant ion compounds of the form A | 12-04-2008 |
20080318399 | PLASMA DOPING METHOD - A plasma doping method that can control a dose precisely is realized. In-plane uniformity of the dose is improved. | 12-25-2008 |
20090004836 | PLASMA DOPING WITH ENHANCED CHARGE NEUTRALIZATION - A plasma doping apparatus includes a pulsed power supply that generates a pulsed waveform having a first period with a first power level and a second period with a second power level. A plasma source generates a pulsed plasma with the first power level during the first period and with the second power level during the second period. A bias voltage power supply generates a bias voltage waveform at an output that is electrically connected to a platen which supports a substrate. The bias voltage waveform having a first voltage during a first period and second voltage with a negative potential that attract ions in the plasma to the substrate for plasma doping during a second period. At least one of the first and second power levels of the RF waveform is chosen to at least partially neutralize charge accumulating on the substrate. | 01-01-2009 |
20090068823 | Plasma Ion Doping Method and Apparatus - In plasma ion doping operations, a wafer is positioned on a susceptor within a reaction chamber and an ion doping source gas is plasmalyzed in an upper part of the reaction chamber above a major surface of the wafer while supplying a control gas into the reaction chamber in a lower part of the reaction chamber opposite the major surface of the wafer to thereby dope ions into the major surface of the wafer. The ion doping source gas may comprise at least one halide gas, and the control gas may comprise at least one depositing gas, such as a silane gas. In further embodiments, a diluent gas, such as an inert gas, may be supplied to the reaction chamber while supplying the ion doping source gas and the control gas. Related plasma ion doping apparatus are described. | 03-12-2009 |
20090104761 | Plasma Doping System With Charge Control - A method of plasma doping includes generating a plasma comprising dopant ions proximate to a platen supporting a substrate in a plasma chamber. The platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. At least one sensor measuring data related to charging conditions favorable for forming an electrical discharge is monitored. At least one plasma process parameter is modified in response to the measured data, thereby reducing a probability of forming an electrical discharge. | 04-23-2009 |
20090176355 | Plasma Doping Method and Plasma Processing Device - An object of the invention is to provide a plasma doping method excellent in the uniformity of concentration of impurities introduced into the surface of a sample and a plasma processing device capable of uniformly performing plasma processing of a sample. | 07-09-2009 |
20090181526 | Plasma Doping Method and Apparatus - An object of the invention is to provide a plasma doping method and a plasma doping apparatus in which uniformity of concentration of impurities introduced into a sample surface are excellent. | 07-16-2009 |
20090186469 | APPARATUS AND METHOD FOR DOPING - There is proposed an apparatus for doping a material to be doped by generating plasma (ions) and accelerating it by a high voltage to form an ion current is proposed, which is particularly suitable for processing a substrate having a large area. The ion current is formed to have a linear sectional configuration, and doping is performed by moving a material to be doped in a direction substantially perpendicular to the longitudinal direction of a section of the ion current. | 07-23-2009 |
20090197401 | Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces - Plasma immersion ion implantation employing a very high RF bias voltage on an electrostatic chuck to attain a requisite implant depth profile is carried out by first depositing a partially conductive silicon-containing seasoning layer over the interior chamber surfaces prior to wafer introduction. | 08-06-2009 |
20090203197 | NOVEL METHOD FOR CONFORMAL PLASMA IMMERSED ION IMPLANTATION ASSISTED BY ATOMIC LAYER DEPOSITION - Embodiments of the invention provide a novel apparatus and methods for forming a conformal doped layer on the surface of a substrate. A substrate is provided to a process chamber, and a layer of dopant source material is deposited by plasma deposition, atomic layer deposition, or plasma-assisted atomic layer deposition. The substrate is then subjected to thermal processing to activate and diffuse dopants into the substrate surface. | 08-13-2009 |
20090203198 | SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR MANUFACTURING METHOD USING THE SAME - A semiconductor manufacturing apparatus and method are disclosed in which the apparatus comprises a reaction tube configured to hold one or more wafers, a spray pipe coupled to the reaction tube for spraying reaction gas into the reaction tube, and a plurality of electrodes used to convert the reaction gas to a plasma state. The electrodes include a cathode and an anode plasma electrode arranged for exciting reaction gas exiting the spray pipe to a plasma state prior to entry into the reaction tube. A switching device is coupled to both the cathode and anode plasma electrode and configured to switch a polarity of a high voltage applied to each of the cathode and anode to prevent a build-up of positive plasma reaction gas ions on the cathode during repeated processing steps. | 08-13-2009 |
20090215250 | Plasma immersion ion implantation process with reduced polysilicon gate loss and reduced particle deposition - In plasma immersion ion implantation of a polysilicon gate, a hydride of the dopant is employed as a process gas to avoid etching the polysilicon gate, and sufficient argon gas is added to reduce added particle count to below 50 and to reduce plasma impedance fluctuations to 5% or less. | 08-27-2009 |
20090215251 | PLASMA IMMERSION ION IMPLANTATION PROCESS WITH CHAMBER SEASONING AND SEASONING LAYER PLASMA DISCHARGING FOR WAFER DECHUCKING - In a plasma immersion ion implantation process, the thickness of a pre-implant chamber seasoning layer is increased (to permit implantation of a succession of wafers without replacing the seasoning layer) without loss of wafer clamping electrostatic force due to increased seasoning layer thickness. This is accomplished by first plasma-discharging residual electrostatic charge from the thick seasoning layer. The number of wafers which can be processed using the same seasoning layer is further increased by fractionally supplementing the seasoning layer after each wafer is processed, which may be followed by a brief plasma discharging of the supplemented seasoning before processing the next wafer. | 08-27-2009 |
20090221136 | METHOD OF IMPLANTING ION SPECIES INTO MICROSTRUCTURE PRODUCTS BY CONCURRENTLY CLEANING THE IMPLANTER - By operating an implantation tool with a source gas having a halogen fraction of | 09-03-2009 |
20090233427 | PLASMA DOPING METHOD - An impurity region is formed in a surface of a substrate by exposing the substrate to a plasma generated from a gas containing an impurity in a vacuum chamber. In this process, a plasma doping condition is set with respect to a dose of the impurity to be introduced into the substrate so that a first one of doses in a central portion and in a peripheral portion of the substrate is greater than a second one of the doses during an initial period of doping, with the second dose becoming greater than the first dose thereafter. | 09-17-2009 |
20090280628 | PLASMA IMMERSION ION IMPLANTATION PROCESS WITH CHAMBER SEASONING AND SEASONING LAYER PLASMA DISCHARGING FOR WAFER DECHUCKING - In a plasma immersion ion implantation process, the thickness of a pre-implant chamber seasoning layer is increased (to permit implantation of a succession of wafers without replacing the seasoning layer) without loss of wafer clamping electrostatic force due to increased seasoning layer thickness. This is accomplished by first plasma-discharging residual electrostatic charge from the thick seasoning layer. The number of wafers which can be processed using the same seasoning layer is further increased by fractionally supplementing the seasoning layer after each wafer is processed, which may be followed by a brief plasma discharging of the supplemented seasoning before processing the next wafer. | 11-12-2009 |
20090317963 | PLASMA DOPING PROCESSING DEVICE AND METHOD THEREOF - An amount of leakage of a substrate-cooling gas into a vacuum container is measured by using a flow-rate measuring device so that the flow rate of a diluting gas that is the same as the substrate-cooling gas is controlled by a control device or a plasma doping time is prolonged, in accordance with the amount of leakage. | 12-24-2009 |
20100015788 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Plasma doping is performed by exposing a support substrate | 01-21-2010 |
20100022076 | Ion Implantation with Heavy Halogenide Compounds - A method of plasma doping includes providing a dopant gas comprising a dopant heavy halogenide compound gas to a plasma chamber. A plasma is formed in the plasma chamber with the dopant heavy halogenide compound gas and generates desired dopant ions and heavy fragments of precursor dopant molecule. A substrate in the plasma chamber is biased so that the desired dopant ions impact the substrate with a desired ion energy, thereby implanting the desired dopant ions and the heavy fragments of precursor dopant molecule into the substrate, wherein at least one of the ion energy and composition of the dopant heavy halogenide compound is chosen so that the implant profile in the substrate is substantially determined by the desired dopant ions. | 01-28-2010 |
20100041218 | USJ TECHNIQUES WITH HELIUM-TREATED SUBSTRATES - A method of using helium to create ultra shallow junctions is disclosed. A pre-implantation amorphization using helium has significant advantages. For example, it has been shown that dopants will penetrate the substrate only to the amorphous-crystalline interface, and no further. Therefore, by properly determining the implant energy of helium, it is possible to exactly determine the junction depth. Increased doses of dopant simply reduce the substrate resistance with no effect on junction depth. Furthermore, the lateral straggle of helium is related to the implant energy and the dose rate of the helium PAI, therefore lateral diffusion can also be determined based on the implant energy and dose rate of the helium PAI. Thus, dopant may be precisely implanted beneath a sidewall spacer, or other obstruction. | 02-18-2010 |
20100041219 | USJ TECHNIQUES WITH HELIUM-TREATED SUBSTRATES - A method of using helium to create ultra shallow junctions is disclosed. A pre-implantation amorphization using helium has significant advantages. For example, it has been shown that dopants will penetrate the substrate only to the amorphous-crystalline interface, and no further. Therefore, by properly determining the implant energy of helium, it is possible to exactly determine the junction depth. Increased doses of dopant simply reduce the substrate resistance with no effect on junction depth. Furthermore, the lateral straggle of helium is related to the implant energy and the dose rate of the helium PAI, therefore lateral diffusion can also be determined based on the implant energy and dose rate of the helium PAI. Thus, dopant may be precisely implanted beneath a sidewall spacer, or other obstruction. | 02-18-2010 |
20100048003 | Plasma processing apparatus and method thereof - A plasma processing apparatus using a capacitive coupled plasma (CCP) source requiring a low pressure range of about 25 mT or less and a method thereof are disclosed. Plasma source power may be applied in a pulse mode to either one of upper and lower electrodes in a chamber, which generates plasma and processes a semiconductor substrate, and plasma maintaining power may be continuously applied to the other of the upper and lower electrodes, such that a stable pulse plasma process may be performed in a low pressure range of about 25 mT or less. | 02-25-2010 |
20100075489 | METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR PRODUCING APPARATUS - A plasma of a gas containing an impurity is produced through a discharge in a vacuum chamber, and a plurality of substrates are successively doped with the impurity by using the plasma, wherein a plasma doping condition of a subject substrate is adjusted based on an accumulated discharge time until the subject substrate is placed in the vacuum chamber. | 03-25-2010 |
20100099242 | Production Method for a Lateral Electro-Optical Modulator on Silicon With Auto-Aligned Implanted Zones - The invention relates to a production method of a lateral electro-optical modulator on an SOI substrate, the modulator comprising a rib waveguide formed in the thin layer of silicon of the SOI substrate, the rib waveguide being placed between a doped region P and a doped region N formed in the thin layer of silicon, the rib waveguide occupying an intrinsic region of the thin layer, at least one doped zone P being formed in the rib and perpendicularly to the substrate. The method comprises masking steps of the thin layer of silicon to define therein the rib of the waveguide, etching of the rib, masking of the thin layer of silicon to delimit the parts to be doped P, doping of the parts to be doped P, masking of the thin layer of silicon to delimit the region to be doped N and doping of the region to be doped N. The masking steps utilises a hard mask whereof the pattern defines the rib of the waveguide, the zone to be doped P in the rib of the waveguide and the limit of the doped region N relative to the rib of the waveguide. | 04-22-2010 |
20100112793 | CONFORMAL DOPING IN P3I CHAMBER - Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, a method for implanting ions into a substrate includes providing a substrate into a processing chamber, the substrate comprising substrate surface having one or more features formed therein and each feature having one or more horizontal surfaces and one or more vertical surfaces, generating a plasma from a gas mixture including a reacting gas adapted to produce ions, depositing a material layer on the substrate surface and on at least one horizontal surface of the substrate feature, implanting ions from the plasma into the substrate by an isotropic process into at least one horizontal surface and into at least one vertical surface, and etching the material layer on the substrate surface and the at least one horizontal surface by an anisotropic process. | 05-06-2010 |
20100112794 | DOPING PROFILE MODIFICATION IN P3I PROCESS - Methods for implanting material into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, a method for implanting material into a substrate includes providing a substrate into a processing chamber, the substrate comprising a substrate surface having a material layer formed thereon, generating a first plasma of a non-dopant processing gas, exposing the material layer to the plasma of the non-dopant processing gas, generating a second plasma of a dopant processing gas including a reacting gas adapted to produce dopant ions, and implanting dopant ions from the plasma into the material layer. The method may further include a cleaning or etch process. | 05-06-2010 |
20100167506 | INDUCTIVE PLASMA DOPING - In some embodiments, a method of doping a semiconductor wafer disposed on a pedestal electrode in an inductive plasma chamber includes generating a plasma having a first voltage with respect to ground in the inductive plasma chamber, and applying a radio frequency (RF) voltage with respect to ground to the pedestal electrode in the inductive plasma chamber. The positive RF voltage is based on the first voltage of the plasma. | 07-01-2010 |
20100167507 | PLASMA DOPING APPARATUS AND PLASMA DOPING METHOD - A plasma doping apparatus implants an impurity element into a surface of a processing target object W by using plasma. The apparatus includes a high frequency power supply | 07-01-2010 |
20100167508 | METHOD FOR INTRODUCING IMPURITIES AND APPARATUS FOR INTRODUCING IMPURITIES - A method for introducing impurities includes a step for forming an amorphous layer at a surface of a semiconductor substrate, and a step for forming a shallow impurity-introducing layer at the semiconductor substrate which has been made amorphous, and an apparatus used therefore. Particularly, the step for forming the amorphous layer is a step for irradiating plasma to the surface of the semiconductor substrate, and the step for forming the shallow impurity-introducing layer is a step for introducing impurities into the surface which has been made amorphous. | 07-01-2010 |
20100167509 | METHOD FOR PRODUCING A BURIED N-DOPED SEMICONDUCTOR ZONE IN A SEMICONDUCTOR BODY AND SEMICONDUCTOR COMPONENT - A method for producing a buried n-doped semiconductor zone in a semiconductor body. In one embodiment, the method includes producing an oxygen concentration at least in the region to be doped in the semiconductor body. The semiconductor body is irradiated via one side with nondoping particles for producing defects in the region to be doped. A thermal process is carried out. The invention additionally relates to a semiconductor component with a field stop zone. | 07-01-2010 |
20100173484 | SAFE HANDLING OF LOW ENERGY, HIGH DOSE ARSENIC, PHOSPHORUS, AND BORON IMPLANTED WAFERS - A method of preventing toxic gas formation after an implantation process is disclosed. Certain dopants, when implanted into films disposed on a substrate, may react when exposed to moisture to form a toxic gas and/or a flammable gas. By in-situ exposing the doped film to an oxygen containing compound, dopant that is shallowly implanted into the layer stack reacts to form a dopant oxide, thereby reducing potential toxic gas and/or flammable gas formation. Alternatively, a capping layer may be formed in-situ over the implanted film to reduce the potential generation of toxic gas and/or flammable gas. | 07-08-2010 |
20100190324 | REDUCING PHOTORESIST LAYER DEGRADATION IN PLASMA IMMERSION ION IMPLANTATION - A method of plasma immersion ion implantation of a workpiece having a photoresist mask on its top surface prevents photoresist failure from carbonization of the photoresist. The method includes performing successive ion implantation sub-steps, each of the ion implantation sub-steps having a time duration over which only a fractional top portion of the photoresist layer is damaged by ion implantation. After each one of the successive ion implantation sub-steps, the fractional top portion of the photoresist is removed while leaving the remaining portion of the photoresist layer in place by performing an ashing sub-step. The number of the successive ion implantation sub-steps is sufficient to reach a predetermined ion implantation dose in the workpiece. | 07-29-2010 |
20100267224 | ENHANCED SCAVENGING OF RESIDUAL FLUORINE RADICALS USING SILICON COATING ON PROCESS CHAMBER WALLS - Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for substrate processing includes a process chamber having a chamber body defining an inner volume; and a silicon containing coating disposed on an interior surface of the chamber body, wherein an outer surface of the silicon containing coating is at least 35 percent silicon (Si) by atom. In some embodiments, a method for forming a silicon containing coating in a process chamber includes providing a first process gas comprising a silicon containing gas to an inner volume of the process chamber; and forming a silicon containing coating on an interior surface of the process chamber, wherein an outer surface of the silicon containing coating is at least 35 percent silicon. | 10-21-2010 |
20100297836 | PLASMA DOPING APPARATUS AND METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A top plate, disposed on an upper portion of a vacuum container so as to face a substrate-placing area of a sample electrode, is provided with an impurity-containing film that contains an impurity, and is formed on a top plate peripheral edge portion area that is a face exposable to a plasma generated in the vacuum container, and is located on a peripheral edge of a top plate center portion area that faces the center portion of the substrate-placing area. | 11-25-2010 |
20100323508 | PLASMA GRID IMPLANT SYSTEM FOR USE IN SOLAR CELL FABRICATIONS - A method of ion implantation comprising: providing a plasma within a plasma region of a chamber; positively biasing a first grid plate, wherein the first grid plate comprises a plurality of apertures; negatively biasing a second grid plate, wherein the second grid plate comprises a plurality of apertures; flowing ions from the plasma in the plasma region through the apertures in the positively-biased first grid plate; flowing at least a portion of the ions that flowed through the apertures in the positively-biased first grid plate through the apertures in the negatively-biased second grid plate; and implanting a substrate with at least a portion of the ions that flowed through the apertures in the negatively-biased second grid plate. | 12-23-2010 |
20110021010 | METHOD FOR DOUBLE PATTERN DENSITY - A method deposits an undoped silicon layer on a primary layer, deposits a cap layer on the undoped silicon layer, patterns a masking layer on the cap layer, and patterns the undoped silicon layer into silicon mandrels. The method incorporates impurities into sidewalls of the silicon mandrels in a process that leaves sidewall portions of the silicon mandrels doped with impurities and that leaves central portions of at least some of the silicon mandrels undoped. The method removes the cap layer to leave the silicon mandrels standing on the primary layer and performs a selective material removal process to remove the central portions of the silicon mandrels and to leave the sidewall portions of the silicon mandrels standing on the primary layer. The method patterns at least the primary layer using the sidewall portions of the silicon mandrels as a patterning mask and removes the sidewall portions of the silicon mandrels to leave at least the primary layer patterned. | 01-27-2011 |
20110053360 | PLASMA IMMERSED ION IMPLANTATION PROCESS USING BALANCED ETCH-DEPOSITION PROCESS - Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, a method for implanting ions into a substrate includes providing a substrate into a processing chamber, generating a plasma from a gas mixture including a reacting gas and a etching gas in the chamber, adjusting the ratio between the reacting gas and the etching gas in the supplied gas mixture and implanting ions from the plasma into the substrate. In another embodiment, the method includes providing a substrate into a processing chamber, supplying a gas mixture including reacting gas and a halogen containing reducing gas into the chamber, forming a plasma from the gas mixture, gradually increasing the ratio of the etching gas in the gas mixture, and implanting ions from the gas mixture into the substrate. | 03-03-2011 |
20110065266 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A substrate is exposed to a plasma generated from a gas containing an impurity, thereby doping a surface portion of the substrate with the impurity and thus forming an impurity region. A predetermined plasma doping time is used, which is included within a time range over which a deposition rate on the substrate by the plasma is greater than 0 nm/min and less than or equal to 5 nm/min. | 03-17-2011 |
20110065267 | Plasma Doping Method and Plasma Doping Apparatus - In order to realize a plasma doping method capable of carrying out a stable low-density doping, exhaustion is carried out with a pump while introducing a predetermined gas into a vacuum chamber from a gas supplying apparatus, the pressure of the vacuum chamber is held at a predetermined pressure and a high frequency power is supplied to a coil from a high frequency power source. After the generation of plasma in the vacuum chamber, the pressure of the vacuum chamber is lowered, and the low-density plasma doping is performed to a substrate placed on a substrate electrode. Moreover, the pressure of the vacuum chamber is gradually lowered, and the high frequency power is gradually increased, thereby the low-density plasma doping is carried out to the substrate placed on the substrate electrode. Furthermore, a forward power Pf and a reflected power Pr of the high frequency power supplied to the substrate electrode are sampled at a high speed, and when a value of which the power difference Pf-Pr is integrated with respect to time reaches a predetermined value, the supply of the high frequency power is suspended. | 03-17-2011 |
20110070722 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - Doping with suppressed filament deterioration can be performed even in the case of doping in various conditions with an ion doping apparatus having a filament. After ion doping is completed, supply of a material gas is stopped and hydrogen or a rare gas is kept to be supplied. After that, current of the filament is decreased and correspondingly, filament temperature is decreased. Accordingly, in decreasing the filament temperature, the material gas around the filament has been replaced with hydrogen or a rare gas. | 03-24-2011 |
20110097882 | ISOTOPICALLY-ENRICHED BORON-CONTAINING COMPOUNDS, AND METHODS OF MAKING AND USING SAME - An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B | 04-28-2011 |
20110124186 | APPARATUS AND METHOD FOR CONTROLLABLY IMPLANTING WORKPIECES - A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation. | 05-26-2011 |
20110151652 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND PLASMA DOPING SYSTEM - An impurity is introduced into a fin-type semiconductor region ( | 06-23-2011 |
20110171817 | Aromatic Molecular Carbon Implantation Processes - Methods for implanting an aromatic carbon molecule or a selected ionized lower mass byproduct into a workpiece generally includes vaporizing and ionizing aromatic carbon molecule in an ion source to create a plasma and produce aromatic carbon molecules and its ionized lower mass byproducts. The ionized aromatic carbon molecules and lower mass byproducts within the plasma are then extracted to form an ion beam. The ion beam is mass analyzed with a mass analyzer magnet to permit selected ionized aromatic carbon molecules or selected ionized lower mass byproducts to pass therethrough and implant into a workpiece. | 07-14-2011 |
20110189843 | PLASMA DOPING METHOD AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME - A doping method that forms a doped region at a desired location of a three-dimensional (3D) conductive structure, controls the doping depth and doping dose of the doped region relatively easily, has a shallow doping depth, and prevents a floating body effect. A semiconductor device is fabricated using the same doping method. The method includes, forming a conductive structure having a sidewall, exposing a portion of the sidewall of the conductive structure, and forming a doped region in the exposed portion of the sidewall by performing a plasma doping process. | 08-04-2011 |
20110201185 | Method to improve transistor performance matching for plasma-assisted source/drain formation - Methods to dope transistors with equal or similar dopant concentration are described. In a first alternative, a slow dose per pulse ramp during plasma-assisted doping is proposed. This method results in a thinner surface deposited layer resulting in equal dopant concentration throughout the area. In a second alternative, transistors are placed away from the mask edge in order to achieve equal dopant concentration. | 08-18-2011 |
20110207306 | SEMICONDUCTOR STRUCTURE MADE USING IMPROVED ION IMPLANTATION PROCESS - Methods and apparatus for producing a semiconductor structure include: subjecting an implantation surface of a semiconductor wafer to an ion implantation process to create an exfoliation layer therein, wherein the ion implantation process includes simultaneously implanting two different species of ions into the implantation surface of the semiconductor wafer. | 08-25-2011 |
20110207307 | PLASMA IMMERSION ION IMPLANTATION METHOD USING A PURE OR NEARLY PURE SILICON SEASONING LAYER ON THE CHAMBER INTERIOR SURFACES - Plasma immersion ion implantation employing a very high RF bias voltage on an electrostatic chuck to attain a requisite implant depth profile is carried out by first depositing a partially conductive silicon-containing seasoning layer over the interior chamber surfaces prior to wafer introduction. | 08-25-2011 |
20110217830 | PLASMA DOPING METHOD AND APPARATUS - There are provided a plasma doping method and an apparatus which have excellent reproducibility of the concentration of impurities implanted into the surfaces of samples. In a vacuum container, in a state where gas is ejected toward a substrate placed on a sample electrode through gas ejection holes provided in a counter electrode, gas is exhausted from the vacuum container through a turbo molecular pump as an exhaust device, and the inside of the vacuum container is maintained at a predetermined pressure through a pressure adjustment valve, the distance between the counter electrode and the sample electrode is set to be sufficiently small with respect to the area of the counter electrode to prevent plasma from being diffused outward, and capacitive-coupled plasma is generated between the counter electrode and the sample electrode to perform plasma doping. The gas used herein is a gas with a low concentration which contains impurities such as diborane or phosphine. | 09-08-2011 |
20110223750 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS - According to an embodiment, a method for manufacturing a semiconductor device is disclosed. The method includes: arranging a semiconductor substrate on a first electrode out of first and second electrodes arranged to be opposed to each other in a vacuum container; applying negative first pulse voltage and radio-frequency voltage to the first electrode, the negative first pulse voltage being superimposed with the radio-frequency voltage; applying negative second pulse voltage to the second electrode in an off period of the first pulse voltage; and processing the semiconductor substrate or a member on the semiconductor substrate by plasma formed between the first and second electrodes. | 09-15-2011 |
20110230038 | PLASMA DOPING METHOD - Plasma doping is performed using a plasma made of a gas containing an impurity which will serve as a dopant. In this case, at least one of plasma generation high-frequency power and biasing high-frequency power is supplied in the form of pulses. | 09-22-2011 |
20110237056 | METHOD FOR MAKING JUNCTION AND PROCESSED MATERIAL FORMED USING THE SAME - An object of this invention is to provide a method for making a junction which is simple in the process, high in the throughput, and can make a shallow junction with high accuracy. After the suitable state of a substrate surface adapted to the wavelength of an electromagnetic wave to be applied has been formed, the electromagnetic wave is applied to electrically activate impurities so that the excited energy is effectively absorbed within the impurity thin film, thereby effectively making a shallow junction. | 09-29-2011 |
20110275201 | METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE HAVE FIN-SHAPED SEMICONDUCTOR REGIONS - First and second gate insulating films are formed so as to cover at least the upper corner of first and second fin-shaped semiconductor regions. The radius of curvature r | 11-10-2011 |
20110300696 | METHOD FOR DAMAGE-FREE JUNCTION FORMATION - Embodiments of this doping method may be used to improve junction formation. An implant species, such as helium or another noble gas, is implanted into a workpiece to a first depth. A dopant is deposited on a surface of the workpiece. During an anneal, the dopant diffuses to the first depth. The noble gas ions may at least partially amorphize the workpiece during the implant. The workpiece may be planar or non-planar. The implant and deposition may occur in a system without breaking vacuum. | 12-08-2011 |
20120015507 | PLASMA DOPING APPARATUS AND PLASMA DOPING METHOD - A plasma doping apparatus for adding an impurity to a semiconductor substrate includes a chamber, a gas supply unit configured for supplying gas to the chamber, and a plasma source by which to cause the chamber to generate plasma of the supplied gas. The mixed gas containing material gas containing an impurity element to be added to the semiconductor substrate, hydrogen gas, and diluent gas for diluting the material gas is supplied to the chamber. | 01-19-2012 |
20120064704 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH BURIED BIT LINES - A method for fabricating a semiconductor device includes forming a plurality of bodies isolated by trenches by etching a substrate, forming a buried bit line gap-filling a portion of each trench, forming an etch stop layer on an upper surface of the buried bit line; and forming a word line extended in a direction crossing the buried bit line over the etch stop layer. | 03-15-2012 |
20120108042 | Methods Of Forming Doped Regions In Semiconductor Substrates - Some embodiments include methods of forming one or more doped regions in a semiconductor substrate. Plasma doping may be used to form a first dopant to a first depth within the substrate. The first dopant may then be impacted with a second dopant to knock the first dopant to a second depth within the substrate. In some embodiments the first dopant is p-type (such as boron) and the second dopant is neutral type (such as germanium). In some embodiments the second dopant is heavier than the first dopant. | 05-03-2012 |
20120115317 | PLASMA DOPING METHOD AND APPARATUS THEREOF - In a plasma torch unit, a conductor rod having a spiral shape is disposed inside a quartz pipe having a surface coated with boron glass, and a brass block is disposed on the periphery thereof. While a gas is being supplied into a cylindrical chamber, a high-frequency power is supplied to the conductor rod and a plasma is generated in the cylindrical chamber, so that a base material is irradiated with the plasma. | 05-10-2012 |
20120129324 | SEMICONDUCTOR STRUCTURE MADE USING IMPROVED MULTIPLE ION IMPLANTATION PROCESS - Methods and apparatus provide for: a first source of plasma, wherein the plasma includes a first species of ions; a second source of plasma, wherein the plasma includes a second species of ions; selection of the plasma from the first and second sources; and acceleration the first species of ions or the second species of ions toward a semiconductor wafer. | 05-24-2012 |
20120129325 | METHOD FOR ION IMPLANT USING GRID ASSEMBLY - A method of ion implantation comprising: providing a plasma within a plasma region of a chamber; positively biasing a first grid plate, wherein the first grid plate comprises a plurality of apertures; negatively biasing a second grid plate, wherein the second grid plate comprises a plurality of apertures; flowing ions from the plasma in the plasma region through the apertures in the positively-biased first grid plate; flowing at least a portion of the ions that flowed through the apertures in the positively-biased first grid plate through the apertures in the negatively-biased second grid plate; and implanting a substrate with at least a portion of the ions that flowed through the apertures in the negatively-biased second grid plate. | 05-24-2012 |
20120135586 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes forming silicon line patterns in a semiconductor substrate, forming an insulating layer over the silicon line patterns, forming a conductive pattern between the silicon line patterns, forming a spacer over the substrate, forming an interlayer insulating layer between the silicon line patterns, removing the spacer on one side of the silicon line patterns to expose the conductive pattern, forming a bit line contact open region by removing the interlayer insulating layer, forming a polysilicon pattern to cover the bit line contact open region, and forming a junction region diffused to the silicon line pattern through the bit line contact open region. Thereby, a stacked structure of a titanium layer and a polysilicon layer are stably formed when forming a buried bit line and a bit line contact is formed using diffusion of the polysilicon layer to prevent leakage current. | 05-31-2012 |
20120142174 | METHOD AND APPARATUS FOR ENHANCED LIFETIME AND PERFORMANCE OF ION SOURCE IN AN ION IMPLANTATION SYSTEM - An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement. | 06-07-2012 |
20120171853 | DEFECT-FREE JUNCTION FORMATION USING OCTADECABORANE SELF-AMORPHIZING IMPLANTS - A method and apparatus for implanting a semiconductor substrate with boron clusters. A substrate is implanted with octadecaborane by plasma immersion or ion beam implantation. The substrate surface is then annealed to completely dissociate and activate the boron clusters. The annealing may take place by melting the implanted regions or by a sub-melt annealing process. | 07-05-2012 |
20120190181 | CARBON IMPLANTATION PROCESS AND CARBON ION PRECURSOR COMPOSITION - Methods and carbon ion precursor compositions for implanting carbon ions generally includes vaporizing and ionizing a gas mixture including carbon oxide and methane gases in an ion source to create a plasma and produce carbon ions. The ionized carbon within the plasma is then extracted to form an ion beam. The ion beam is mass analyzed with a mass analyzer magnet to permit the ionized carbon to pass therethrough and implant into a workpiece. | 07-26-2012 |
20120190182 | DEFECT-FREE JUNCTION FORMATION USING OCTADECABORANE SELF-AMORPHIZING IMPLANTS - A method and apparatus for implanting a semiconductor substrate with boron clusters. A substrate is implanted with octadecaborane by plasma immersion or ion beam implantation. The substrate surface is then annealed to completely dissociate and activate the boron clusters. The annealing may take place by melting the implanted regions or by a sub-melt annealing process. | 07-26-2012 |
20120231616 | SEMICONDUCTOR STRUCTURE MADE USING IMPROVED MULTIPLE ION IMPLANTATION PROCESS - Methods and apparatus provide for: a first source of plasma, wherein the plasma includes a first species of ions; a second source of plasma, wherein the plasma includes a second species of ions; selection of the plasma from the first and second sources; and acceleration the first species of ions or the second species of ions toward a semiconductor wafer. | 09-13-2012 |
20120289036 | SURFACE DOSE RETENTION OF DOPANTS BY PRE-AMORPHIZATION AND POST IMPLANT PASSIVATION TREATMENTS - The invention generally relates to pre-implant and post-implant treatments to promote the retention of dopants near the surface of an implanted substrate. The pre-implant treatments include forming a plasma from an inert gas and implanting the inert gas into the substrate to render an upper portion of the substrate amorphous. The post-implant treatment includes forming a passivation layer on the upper surface of the substrate after doping the substrate in order to retain the dopant during a subsequent activation anneal. | 11-15-2012 |
20120302048 | PRE OR POST-IMPLANT PLASMA TREATMENT FOR PLASMA IMMERSED ION IMPLANTATION PROCESS - Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, the method for implanting ions into a substrate by a plasma immersion ion implantation process includes providing a substrate into a processing chamber, flowing a gas mixture including a hydride dopant gas and a fluorine-containing dopant gas into the processing chamber, wherein the hydride dopant gas comprises P-type hydride dopant gas, N-type hydride dopant gas, or a combination thereof, and the fluorine-containing dopant gas comprises a P-type or N-type dopant atom, generating a plasma from the gas mixture, and co-implanting ions from the gas mixture into a surface of the substrate. | 11-29-2012 |
20130023112 | METHODS FOR POST DOPANT IMPLANT PURGE TREATMENT - Methods for processing substrates are provided herein. In some embodiments, a method of processing a substrate may include implanting a substrate with a dopant in a first vacuum chamber; transferring the substrate to a second vacuum chamber at a first pressure below atmospheric; providing an inert gas to the second vacuum chamber to raise the pressure to a second pressure; pumping down the second vacuum chamber to a third pressure below the second pressure; and providing the inert gas to the second vacuum chamber to raise the pressure to a fourth pressure above the third pressure. | 01-24-2013 |
20130040444 | METHOD AND APPARATUS FOR SELECTIVE NITRIDATION PROCESS - Embodiments of the invention provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a remote plasma system includes a remote plasma chamber defining a first region for generating a plasma comprising ions and radicals, a process chamber defining a second region for processing a semiconductor device, the process chamber comprising an inlet port formed in a sidewall of the process chamber, the inlet port being in fluid communication with the second region, and a delivery member disposed between the remote plasma chamber and the process chamber and having a passageway in fluid communication with the first region and the inlet port, wherein the delivery member is configured such that a longitudinal axis of the passageway intersects at an angle of about 20 degrees to about 80 degrees with respect to a longitudinal axis of the inlet port. | 02-14-2013 |
20130052811 | PLASMA UNIFORMITY CONTROL USING BIASED ARRAY - A technique for processing a workpiece is disclosed. In accordance with one exemplary embodiment, the technique may be realized as a method for processing a substrate, where the method may comprise: providing the workpiece in the chamber; providing a plurality of electrodes between a wall of the chamber and the workpiece; generating a plasma containing ions between the plurality of electrodes and the workpiece, ion density in an inner portion of the plasma being greater than the ion density in an outer portion of the plasma portion, the outer portion being between the inner portion and the wall of the chamber; and providing a bias voltage to the plurality of electrodes and dispersing at least a portion of the ions in the inner portion until the ion density in the inner portion is substantially equal to the ion density in the periphery plasma portion. | 02-28-2013 |
20130072006 | Methods of Forming Doped Regions in Semiconductor Substrates - Some embodiments include methods of forming one or more doped regions in a semiconductor substrate. Plasma doping may be used to form a first dopant to a first depth within the substrate. The first dopant may then be impacted with a second dopant to knock the first dopant to a second depth within the substrate. In some embodiments the first dopant is p-type (such as boron) and the second dopant is neutral type (such as germanium). In some embodiments the second dopant is heavier than the first dopant. | 03-21-2013 |
20130072007 | Method for Fabricating Black Silicon by Using Plasma Immersion Ion Implantation - A method for fabricating black silicon by using plasma immersion ion implantation is provided, which includes: putting a silicon wafer into a chamber of a black silicon fabrication apparatus; adjusting processing parameters of the black silicon fabrication apparatus to preset scales; generating plasmas in the chamber of the black silicon fabrication apparatus; implanting reactive ions among the plasmas into the silicon wafer, and forming the black silicon by means of the reaction of the reactive ions and the silicon wafer. The method can form the black silicon which has a strong light absorption property and is sensitive to light, and has advantages of high productivity, low cost and simple production process. | 03-21-2013 |
20130078788 | PRODUCING METHOD OF SEMICONDUCTOR DEVICE AND PRODUCTION DEVICE USED THEREFOR - According to one embodiment, a producing method for a semiconductor device comprises: heating a semiconductor substrate to thereby maintain a substrate temperature of the semiconductor substrate at a desired temperature and simultaneously dope the semiconductor substrate with conductive impurities; and performing an activation treatment for activating the conductive impurities for doping. | 03-28-2013 |
20130078789 | Substrate Processing Apparatus, Method of Manufacturing Semiconductor Device and Non-Transitory Computer-Readable Recording Medium - A substrate processing apparatus includes a process chamber accommodating a substrate including a thin film formed at a film-forming temperature; a gas supply unit for supplying a process gas including oxygen and/or nitrogen onto the substrate; an excitation unit for exciting the process gas supplied into the process chamber; a heating unit for heating the substrate; an exhaust unit for exhausting an inside of the process chamber; and a control unit for controlling the gas supply unit, the excitation unit, the heating unit and the exhaust unit such that a temperature of the substrate is equal to or lower than the film-forming temperature when the substrate is processed by heating the substrate by the heating unit, exciting the process gas supplied from the gas supply unit by the excitation unit, and supplying the process gas excited by the excitation unit onto a surface of the substrate. | 03-28-2013 |
20130115763 | METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS - The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide. | 05-09-2013 |
20130137249 | REMOTE RADICAL HYDRIDE DOPANT INCORPORATION FOR DELTA DOPING IN SILICON - The present invention generally relates to methods of forming substrates using remote radical hydride doping. The methods generally include remotely activating a gas and introducing activated radicals of the gas into a chamber. The activated radicals may be activated hydride radicals of a gas such as diborane (B | 05-30-2013 |
20130137250 | BORON ION IMPLANTATION USING ALTERNATIVE FLUORINATED BORON PRECURSORS, AND FORMATION OF LARGE BORON HYDRIDES FOR IMPLANTATION - Methods of implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device including implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. Also disclosed are a system for supplying a boron hydride precursor, and methods of forming a boron hydride precursor and methods for supplying a boron hydride precursor. In one implementation of the invention, the boron hydride precursors are generated for cluster boron implantation, for manufacturing semiconductor products such as integrated circuitry. | 05-30-2013 |
20130288465 | METHODS FOR FILLING HIGH ASPECT RATIO FEATURES ON SUBSTRATES - Methods for filling high aspect ratio features are provided herein. In some embodiments, method of filling a high aspect ratio feature formed in a substrate includes implanting a first species using a first plasma into first surfaces of a first layer formed along the surfaces of the high aspect ratio feature to form implanted first surfaces such that a second species subsequently deposited atop the first layer has an increased mobility along the implanted first surfaces relative to the first surfaces, wherein the first layer substantially prevents the second species from diffusing completely through the first layer; and subsequently filling the high aspect ratio feature with the second species. | 10-31-2013 |
20130288466 | Methods of Forming Doped Regions in Semiconductor Substrates - Some embodiments include methods of forming one or more doped regions in a semiconductor substrate. Plasma doping may be used to form a first dopant to a first depth within the substrate. The first dopant may then be impacted with a second dopant to knock the first dopant to a second depth within the substrate. In some embodiments the first dopant is p-type (such as boron) and the second dopant is neutral type (such as germanium). In some embodiments the second dopant is heavier than the first dopant. | 10-31-2013 |
20130323916 | PLASMA DOPING METHOD AND APPARATUS - A plasma doping apparatus which introduces a predetermined mass flow of gas from a gas supply device into a vacuum chamber while discharging the gas through an exhaust port by a turbo-molecular pump, which is an exhaust device in order to maintain the vacuum chamber under a predetermined pressure by a pressure adjusting valve. A high-frequency power source supplies high-frequency power of 13.56 MHz to a coil disposed in the vicinity of a dielectric window opposite a sample electrode in order to generate an inductively coupled plasma in the vacuum chamber. A sum of an area of an opening of a gas flow-off port opposed to a center portion of the sample electrode is configured to be smaller than that of an area of an opening of the gas flow-off port opposed to a peripheral portion of the sample electrode in order to improve the uniformity. | 12-05-2013 |
20130337641 | PLASMA DOPING METHOD AND APPARATUS - A plasma doping method and an apparatus which have excellent reproducibility of the concentration of impurities implanted into the surfaces of samples. In a vacuum container, in a state where gas is ejected toward a substrate on a sample electrode through gas ejection holes provided in a counter electrode, gas is exhausted from the vacuum container through a turbo molecular pump as an exhaust device, and the inside of the vacuum container is maintained at a predetermined pressure through a pressure adjustment valve, the distance between the counter electrode and the sample electrode is set sufficiently small with respect to the area of the counter electrode to prevent plasma from being diffused outward, and capacitive-coupled plasma is generated between the counter electrode and the sample electrode to perform plasma doping. The gas used herein is a gas with a low concentration which contains impurities such as diborane or phosphine. | 12-19-2013 |
20140094024 | PLASMA DOPING APPARATUS, PLASMA DOPING METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Disclosed is a plasma doping apparatus including a processing chamber, a substrate holding unit, a plasma generating mechanism, a pressure control mechanism, a bias power supply mechanism, and a control unit. The control unit controls the pressure within the processing chamber to be a first pressure and controls the bias power to be supplied to the holding unit is to be a first bias power for a first plasma process. The control unit also controls the pressure within the processing chamber to be a second pressure which is higher than the first pressure, and controls the bias power to be supplied to the holding unit to be a second bias power which is lower than the first bias power for a second plasma process. | 04-03-2014 |
20140248759 | SAFE HANDLING OF LOW ENERGY, HIGH DOSE ARSENIC, PHOSPHORUS, AND BORON IMPLANTED WAFERS - A method of preventing toxic gas formation after an implantation process is disclosed. Certain dopants, when implanted into films disposed on a substrate, may react when exposed to moisture to form a toxic gas and/or a flammable gas. By in-situ exposing the doped film to an oxygen containing compound, dopant that is shallowly implanted into the layer stack reacts to form a dopant oxide, thereby reducing potential toxic gas and/or flammable gas formation. Alternatively, a capping layer may be formed in-situ over the implanted film to reduce the potential generation of toxic gas and/or flammable gas. | 09-04-2014 |
20140256121 | TECHNIQUES AND APPARATUS FOR HIGH RATE HYDROGEN IMPLANTATION AND CO-IMPLANTION - An apparatus for hydrogen and helium implantation is disclosed. The apparatus includes a plasma source system to generate helium ions and hydrogen molecular ions comprising H | 09-11-2014 |
20140302666 | PULSED GAS PLASMA DOPING METHOD AND APPARATUS - A method and apparatus for doping a surface of a substrate with a dopant, with the dopant being for example phosphine or arsine. The doping is performed with a plasma formed primarily of an inert gas such as helium or argon, with a low concentration of the dopant. To provide conformal doping, preferably to form a monolayer of the dopant, the gas flow introduction location is switched during the doping process, with the gas mixture primarily introduced through a center top port in the process chamber during a first period of time followed by introduction of the gas mixture primarily through peripheral or edge injection ports for a second period of time, with the switching continuing in an alternating fashion as the plasma process. | 10-09-2014 |
20140342537 | MECHANISMS FOR FORMING ULTRA SHALLOW JUNCTION - A method of making a semiconductor device includes forming a fin structure over a substrate. The method further includes performing a plasma doping process on the fin structure. Performing the plasma doping process includes implanting plasma ions into the fin structures at a plurality of implant angles, and the plurality of implant angles has an angular distribution and at least one highest angle frequency value. | 11-20-2014 |
20140357068 | PLASMA DOPING APPARATUS, PLASMA DOPING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE - A plasma doping apparatus which performs doping by injecting dopants into a substrate to be processed. The apparatus includes a processing container, a gas supplying unit configured to supply a doping gas and an inert gas for plasma excitation into the processing container, a holding table configured to hold the substrate to be processed, a plasma generating mechanism configured to generate plasma in the processing container using a microwave, a pressure adjusting mechanism configured to adjust a pressure in the processing container, and a control unit configured to control the plasma doping apparatus. The control unit controls the pressure adjusting mechanism to set the pressure in the processing container to be equal to or more than 100 mTorr and less than 500 mTorr such that a plasma processing is performed on the substrate to be processed using the plasma generated by the plasma generating mechanism. | 12-04-2014 |
20150126022 | METHOD FOR FORMING ELECTRODE OF N-TYPE NITRIDE SEMICONDUCTOR, NITRIDE SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF - According to an example embodiment, a method includes forming a nitrogen vacancy surface layer by treating a surface of an n-type nitride semiconductor with inert gas plasma, and forming an oxygen-added nitride film by treating a surface of the nitrogen vacancy surface layer with oxygen-containing gas plasma, and forming an electrode on the oxygen-added nitride film. The nitrogen vacancy surface layer lacks a nitrogen element. | 05-07-2015 |
20150132929 | METHOD FOR INJECTING DOPANT INTO SUBSTRATE TO BE PROCESSED, AND PLASMA DOPING APPARATUS - Provided is a method for injecting a dopant into a substrate to be processed. A method in one embodiment of the present invention includes: (a) a step for preparing, in a processing container, a substrate to be processed; and (b) a step for injecting a dopant into the substrate by supplying a doping gas containing AsH | 05-14-2015 |
20160013018 | ISOTOPICALLY-ENRICHED BORON-CONTAINING COMPOUNDS, AND METHODS OF MAKING AND USING SAME | 01-14-2016 |
20160189963 | DOPING METHOD AND SEMICONDUCTOR ELEMENT MANUFACTURING METHOD - Disclosed is a method of performing doping by implanting a dopant to a processing target substrate. First, in an oxide film forming step, an oxide film is formed on the processing target substrate prior to performing a doping treatment. In addition, after the oxide film is formed on the processing target substrate, a plasma doping treatment is performed from a top of the oxide film after the oxide film forming step. | 06-30-2016 |