Entries |
Document | Title | Date |
20080274604 | SUSCEPTOR WITH BACKSIDE AREA OF CONSTANT EMISSIVITY - Methods and apparatus for providing constant emissivity of the backside of susceptors are provided. Provided is a susceptor comprising: a susceptor plate having a surface for supporting a wafer and a backside surface opposite the wafer supporting surface; a layer comprising an oxide, a nitride, an oxynitride, or combinations thereof located on the backside surface of the susceptor plate, the layer being stable in the presence of a reactive process gas. The layer comprises, for example, silicon dioxide, silicon nitride, silicon oxynitride, or combinations thereof. Also provided is a method comprising: providing a susceptor in a deposition chamber, the susceptor comprising a susceptor plate and a layer comprising an oxide, a nitride, an oxynitride, or combinations thereof, the layer being stable in the presence of the reactive process gases; locating the wafer on a support surface of the susceptor plate. The method can further comprises selectively depositing an epitaxial layer or a non-epitaxial layer on a surface of the wafer. The method further comprises selectively etching to maintain the oxide, nitride, oxynitride, or combinations thereof layer. | 11-06-2008 |
20090081857 | Non-polar and semi-polar GaN substrates, devices, and methods for making them - Non-polar or semi-polar (Al, Ga, In)N substrates are fabricated by re-growth of (Al, Ga, In)N crystal on (Al, Ga, In)N seed crystals, wherein the size of the seed crystal expands or is increased in the lateral and vertical directions, resulting in larger sizes of non-polar and semi-polar substrates useful for optoelectronic and microelectronic devices. One or more non-polar or semi-polar substrates may be sliced from the re-grown crystal. The lateral growth rate may be greater than the vertical growth rate. The seed crystal may be a non-polar seed crystal. The seed crystal may have crystalline edges of equivalent crystallographic orientation | 03-26-2009 |
20090087967 | PRECURSORS AND PROCESSES FOR LOW TEMPERATURE SELECTIVE EPITAXIAL GROWTH - This invention generally relates to low temperature epitaxy. More specifically, this invention relates to processes for achieving low temperature selective epitaxial growth by chemical vapor deposition of source precursors containing Si or Ge in the presence of bromine or iodine, compositions containing precursors and brominated or iodinated compounds suitable for achieving selective epitaxial growth using the processes, epitaxial layers made using the processes, devices and other types of structures made using the processes, and processes for cleaning epitaxy reactor chambers using a bromine etchant source. | 04-02-2009 |
20090130830 | Method for fabricating optical semiconductor device - In the method of fabricating an optical semiconductor device, a semiconductor layer is formed on an InP region, and includes semiconductor films. A first etching mask is formed on the semiconductor layer. The semiconductor layer is etched through the first etching mask to form a semiconductor mesa and a first marking mesa, each mesa includes an active layer and an InP cladding layer, the InP cladding layer being provided on the active layer. The active layer is made of semiconductor material different from InP. An InP burying region is grown through the first etching mask on a side of the semiconductor mesa and a side of the first marking mesa to bury the semiconductor mesa and the first marking mesa. A second etching mask is formed on the InP burying region after removing the first etching mask, and has an opening located above the first marking mesa. InP in the InP burying region and the first marking mesa is etched through the second etching mask to form a second marking mesa. The alignment mark includes the second marking mesa, and the active layer is exposed on the top of the second marking mesa. | 05-21-2009 |
20090155989 | NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF PRODUCING SAME - A nitride semiconductor crystal substrate is produced by forming a network mask repeating a closed loop unit shape upon an undersubstrate, growing a nitride semiconductor crystal in vapor phase, producing convex facet hills covered with facets on exposed parts Π, forming outlining concavities on mask-covered parts | 06-18-2009 |
20090163003 | MANUFACTURING METHOD OF SELF-SEPARATION LAYER - A manufacturing method of a self separation layer includes the steps of: forming a plurality of convex portions on a substrate; growing a main material layer on the convex portions; and separating the main material layer from the substrate. | 06-25-2009 |
20090170295 | MANUFACTURING METHOD FOR A SEMI-CONDUCTOR ON INSULATOR SUBSTRATE COMPRISING A LOCALISED Ge ENRICHED STEP - The invention relates to a manufacturing method of a semi-conductor on insulator substrate from an SOI substrate comprising a surface layer of silicon on an electrically insulating layer, called buried insulating layer, wherein a layer of Si | 07-02-2009 |
20090239361 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - An aspect of the invention provides a method of manufacturing a method of manufacturing a semiconductor element comprises the steps of: growing epitaxially a semiconductor layer on top of a semiconductor substrate; forming a patterned portion of the grown semiconductor layer by forming a pattern by a patterning process on top of the grown semiconductor layer; removing a portion of the semiconductor layer other than the patterned portion by a first etching method with a first etchant; and immersing a resultant from the first etching method in a second etchant that etches only the semiconductor substrate by a second etching method thereby removing the substrate from the semiconductor layer. | 09-24-2009 |
20090263959 | Method of manufacturing semiconductor wafer - A device layer is formed on at least the upper surface of a prime wafer by an epitaxial growth method. Then, a protective film is formed to cover at least the device layer. The lower surface of the prime wafer is ground to have a flat lower surface. | 10-22-2009 |
20090325367 | METHODS AND APPARATUS FOR A CHEMICAL VAPOR DEPOSITION REACTOR - Embodiments of the invention generally relate to a chemical vapor deposition system and related method of use. In one embodiment, the system includes a reactor lid assembly having a body, a track assembly having a body and a guide path located along the body, and a heating assembly operable to heat the substrate as the substrate moves along the guide path. The body of the lid assembly and the body of the track assembly are coupled together to form a gap that is configured to receive a substrate. In another embodiment, a method of forming layers on a substrate using the chemical vapor deposition system includes introducing the substrate into a guide path, depositing a first layer on the substrate and depositing a second layer on the substrate, while the substrate moves along the guide path; and preventing mixing of gases between the first deposition step and the second deposition step. | 12-31-2009 |
20100068872 | Method for Fabricating Single-Crystalline Substrate Containing Gallium Nitride - The present invention provides a method for fabricating a single-crystalline substrate containing gallium nitride (GaN) comprising the following steps. First, form a plurality of island containing GaN on a host substrate. Next, use the plurality of islands containing GaN as a mask to etch the substrate and form an uneven host substrate. Then, perform epitaxy on the uneven host substrate to make the islands containing GaN grow in size and merge into a continuous single-crystalline film containing GaN. Finally, separate the single-crystalline film containing GaN from the uneven host substrate to obtain the single-crystalline substrate containing GaN. According to the present invention, process time can be saved and yield can be improved. | 03-18-2010 |
20100075488 | CVD REACTOR WITH MULTIPLE PROCESSING LEVELS AND DUAL-AXIS MOTORIZED LIFT MECHANISM - An apparatus for processing a substrate, comprising a processing chamber and a substrate support and lift pin assembly disposed within the chamber. The substrate support and lift pin assembly are coupled to a lift mechanism that controls positioning of the substrate support and the lift pins and provides rotation for the substrate support. The lift mechanism includes at least one sensor capable of generating a signal when clearance between the substrate support and the lift pins allows rotation of the substrate support to begin. The substrate support capable of concurrent axial motion and rotation may be used in a processing chamber comprising multiple processing zones separated by edge rings. Substrates may be subjected to successive or cyclical processes by moving between the multiple processing zones. | 03-25-2010 |
20100093159 | SEPARATE INJECTION OF REACTIVE SPECIES IN SELECTIVE FORMATION OF FILMS - Methods and apparatuses for selective epitaxial formation of films separately inject reactive species into a CVD chamber. The methods are particularly useful for selective deposition using volatile combinations of precursors and etchants. Formation processes include simultaneous supply of precursors and etchants for selective deposition, or sequential supply for cyclical blanket deposition and selective etching. In either case, precursors and etchants are provided along separate flow paths that intersect in the relatively open reaction space, rather than in more confined upstream locations. | 04-15-2010 |
20100120237 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES - A growth substrate is removed from a semiconductor film, and a surface of the semiconductor film exposed by removing the growth substrate is flattened. The semiconductor film along device division lines are partially etched by dry etching to form grooves in a lattice that form streets, not reaching the metal support in the semiconductor film. The surface of the semiconductor film at the bottom of the grooves is flattened. The semiconductor film along the device division lines at the bottom of the grooves are further etched by wet etching to expose the metal support at the bottom of the grooves to finish the streets. | 05-13-2010 |
20100136773 | Semiconductor Device Manufacturing Method and Substrate Processing Apparatus - A semiconductor device manufacturing method comprises the steps of loading a substrate into a processing chamber, mounting the substrate on a support tool in the processing chamber, processing the substrate mounted on the support tool by supplying process gas into the processing chamber, purging the interior of the processing chamber after the substrate processing step, and unloading the processed substrate from the processing chamber after the step of purging the interior of the processing chamber, wherein in the step of purging the interior of the processing chamber, exhaust is performed toward above the substrate and toward below the substrate in the processing chamber, and the exhaust rate toward above the substrate is set larger than the exhaust rate toward below the substrate. | 06-03-2010 |
20100159679 | MANUFACTURING METHOD FOR EPITAXIAL WAFER - To provide a manufacturing method for an epitaxial wafer that alleviates distortions on a back surface thereof due to sticking between a wafer and a susceptor, thereby preventing decrease in flatness thereof due to a lift pin. A manufacturing method for an epitaxial wafer according to the present invention includes: an oxide film forming step in which an oxide film is formed on a back surface thereof; an etching step in which a hydrophobic portion exposing a back surface of the semiconductor wafer is provided by partially removing the oxide film; a wafer placing step in which the semiconductor wafer is placed; and an epitaxial growth step in which an epitaxial layer is grown on a main surface of the semiconductor wafer; and the diameter of the lift pin installation circle provided on a circle on a bottom face of a susceptor is smaller than that of the hydrophobic portion. | 06-24-2010 |
20100197123 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A semiconductor device includes a device isolation structure formed on a semiconductor substrate to define an active region. A first Si-based epitaxial pattern is formed over the active region corresponding to a bit line contact region and a portion of a gate region at both sides adjacent to the bit line contact region. A second Si-based epitaxial layer is formed over the semiconductor substrate which is stepped up on the first Si-based epitaxial pattern. A stepped gate pattern is formed over the stepped second Si-based epitaxial layer. | 08-05-2010 |
20100240198 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes growing an AlN layer by MOVPE in which a nitrogen-source flow ratio at a far side from a substrate is set lower than that at a near side, the nitrogen-source flow ratio being a ratio of a flow rate of a nitrogen source to a total flow rate of growth gas; and growing a GaN-based semiconductor layer on the AlN layer by MOVPE. | 09-23-2010 |
20100248461 | Method of growing GaN using CVD and HVPE - A thick gallium nitride (GaN) film is formed on a LiAlO | 09-30-2010 |
20100261341 | METHOD FOR MANUFACTURING EPITAXIAL WAFER - An epitaxial wafer is provided capable of eliminating particles in a device process, particles being generated from a scratch in a boundary area between a rear surface and a chamfered surface of a wafer. The scratch in the boundary area between the rear surface and the chamfered surface is removed in a scratch removal process. Thus, no particles exist caused by a scratch, at a time of immersion in an etching solution in the device process, and thus a device yield is increased. | 10-14-2010 |
20100273320 | DEVICE AND METHOD FOR SELECTIVELY DEPOSITING CRYSTALLINE LAYERS USING MOCVD OR HVPE - The invention relates to a device for depositing one or more layers, in particular crystalline layers, on one or more substrates, in particular crystalline substrates ( | 10-28-2010 |
20100323506 | Method for fabricating semiconductor substrates and semiconductor devices - A method for fabricating a semiconductor layer comprising: a) growing a semiconductor layer on a foreign substrate; b) forming at least one opening on the semiconductor layer, wherein the opening exposes the interface between the semiconductor layer and the foreign substrate; and c) removing at least part of the semiconductor solid state material along the interface between the semiconductor layer and the foreign substrate. The removing step c) is preferably achieved by selective interfacial chemical etching. The semiconductor layer may be utilized as a substrate for fabrication of a wide variety of electronic and opto-electronic devices and integrated circuitry products. | 12-23-2010 |
20110053359 | METHODS OF MANUFACTURING QUANTUM WELL MATERIALS - Processes for economical large scale commercial production of blocks of quantum well particles, platelets, or continuous sheets of material imparting minimal or essentially no parasitic substrate loss in quantum well devices such as thermoelectric generators in which the blocks are embodied involve roll to roll processing, i.e., deposition and crystallization of alternating layers of quantum well materials, on an elongate and continuous base layer of appreciable width. Blocks of quantum well materials having no attached base layer are produced on decomposable or release treated base layers. | 03-03-2011 |
20110059599 | Graphene Nanoelectric Device Fabrication - Embodiments of the present invention provide methods for fabricating graphene nanoelectronic devices with semiconductor compatible processes, which allow wafer scale fabrication of graphene nanoelectronic devices. Embodiments of the present invention also provide methods for passivating graphene nanoelectronic devices, which enable stacking of multiple graphene devices and the creation of high density graphene based circuits. Other embodiments provide methods for producing devices with graphene layer segments having multiple thicknesses. | 03-10-2011 |
20110117732 | CYCLICAL EPITAXIAL DEPOSITION AND ETCH - Methods for selectively depositing high quality epitaxial material include introducing pulses of a silicon-source containing vapor while maintaining a continuous etchant flow. Epitaxial material is deposited on areas of a substrate, such as source and drain recesses. Between pulses, the etchant flow continues such that lower quality epitaxial material may be removed, as well as any non-epitaxial material that may have been deposited. The pulse of silicon-source containing vapor may be repeated until a desired thickness of epitaxial material is selectively achieved in semiconductor windows, such as recessed source/drain regions. | 05-19-2011 |
20110269301 | MANUFACTURING METHOD OF SINGLE CRYSTAL SEMICONDUCTOR FILM AND MANUFACTURING METHOD OF ELECTRODE - To provide a method of obtaining a single crystal semiconductor film by a method that is simple and low-cost. A single crystal semiconductor film | 11-03-2011 |
20110300695 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - A method of manufacturing a semiconductor device includes the steps of loading a substrate into a processing chamber; processing the substrate by supplying plural kinds of reaction substances into the processing chamber multiple number of times; and unloading the processed substrate from the processing chamber, wherein at least one of the plural kinds of reaction substances contains a source gas obtained by vaporizing a liquid source by a vaporizing part; in the step of processing the substrate, vaporizing operation of supplying the liquid source to the vaporizing part and vaporizing the liquid source is intermittently performed, and at least at a time other than performing the vaporizing operation of the liquid source, a solvent capable of dissolving the liquid source is flowed to the vaporizing part at a first flow rate; and at a time other than performing the vaporizing operation of the liquid source and every time performing the vaporizing operation of the liquid source prescribed number of times, the solvent is flowed to the vaporizing part at a second flow rate larger than the first flow rate. | 12-08-2011 |
20110312167 | PLASMA PROCESSING APPARATUS, AND DEPOSITION METHOD AN ETCHING METHOD USING THE PLASMA PROCESSING APPARATUS - A plasma processing apparatus, comprising:
| 12-22-2011 |
20120021591 | Method of Manufacturing Nitride Substrate for Semiconductors - In an independent GaN film manufactured by creating a GaN layer on a base heterosubstrate using vapor-phase deposition and then removing the base substrate, owing to layer-base discrepancy in thermal expansion coefficient and lattice constant, bow will be a large ±40 μm to ±100 μm. Since with that bow device fabrication by photolithography is challenging, reducing the bow to +30 μm to −20 μm is the goal. The surface deflected concavely is ground to impart to it a damaged layer that has a stretching effect, making the surface become convex. The damaged layer on the surface having become convex is removed by etching, which curtails the bow. Alternatively, the convex surface on the side opposite the surface having become convex is ground to generate a damaged layer. With the concave surface having become convex due to the damaged layer, suitably etching off the damaged layer curtails the bow. | 01-26-2012 |
20120122304 | System and Method for Transferring Substrates in Large Scale Processing of CIGS and/or CIS Devices - The present invention provides methods for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates having a copper and indium composite structure, and including a peripheral region, the peripheral region including a plurality of openings, the plurality of openings including at least a first opening and a second opening. The method includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the furnace including a holding apparatus. The method further includes introducing a gaseous species into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature to at least initiate formation of a copper indium diselenide film on each of the substrates. | 05-17-2012 |
20120244688 | SELECTIVE EPITAXIAL FORMATION OF SEMICONDUCTIVE FILMS - Epitaxial layers are selectively formed in semiconductor windows by a cyclical process of repeated blanket deposition and selective etching. The blanket deposition phases leave non-epitaxial material over insulating regions, such as field oxide, and the selective etch phases preferentially remove non-epitaxial material while deposited epitaxial material builds up cycle-by-cycle. Quality of the epitaxial material improves relative to selective processes where no deposition occurs on insulators. Use of a germanium catalyst during the etch phases of the process aid etch rates and facilitate economical maintenance of isothermal and/or isobaric conditions throughout the cycles. Throughput and quality are improved by use of trisilane, formation of amorphous material over the insulating regions and minimizing the thickness ratio of amorphous:epitaxial material in each deposition phase. | 09-27-2012 |
20130072005 | METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE - To provide a method for manufacturing a nitride semiconductor substrate capable of reducing a cleavage during slicing of a nitride semiconductor single crystal, and capable of improving a yield rate of the nitride semiconductor substrate, comprising: growing a nitride semiconductor single crystal on a seed crystal substrate by vapor phase epitaxy; grinding an outer peripheral surface of the grown nitride semiconductor single crystal; and slicing the nitride semiconductor single crystal with its outer peripheral surface ground, wherein a grinding amount of the outer peripheral surface of the nitride semiconductor single crystal in the step of grinding is 1.5 mm or more. | 03-21-2013 |
20130130482 | METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE - On a substrate, a silicon carbide layer provided with a main surface is formed. A mask is formed to cover a portion of the main surface of the silicon carbide layer. The main surface of the silicon carbide layer on which the mask is formed is thermally etched using chlorine-based gas so as to provide the silicon carbide layer with a side surface inclined relative to the main surface. The step of thermally etching is performed in an atmosphere in which the chlorine-based gas has a partial pressure of 50% or smaller. | 05-23-2013 |
20130210220 | METHODS OF FORMING REVERSE SIDE ENGINEERED III-NITRIDE DEVICES - Group III-nitride devices are described that include a stack of III-nitride layers, passivation layers, and conductive contacts. The stack includes a channel layer with a 2DEG channel, a barrier layer and a spacer layer. One passivation layer directly contacts a surface of the spacer layer on a side opposite to the channel layer and is an electrical insulator. The stack of III-nitride layers and the first passivation layer form a structure with a reverse side proximate to the first passivation layer and an obverse side proximate to the barrier layer. Another passivation layer is on the obverse side of the structure. Defected nucleation and stress management layers that form a buffer layer during the formation process can be partially or entirely removed. | 08-15-2013 |
20130217215 | GRAPHENE NANOELECTRONIC DEVICE FABRICATION - Methods for fabricating graphene nanoelectronic devices with semiconductor compatible processes, which allow wafer scale fabrication of graphene nanoelectronic devices, is provided. One method includes the steps of preparing a dispersion of functionalized graphene in a solvent; and applying a coating of said dispersion onto a substrate and evaporating the solvent to form a layer of functionalized graphene; and defunctionalizing the graphene to form a graphene layer on the substrate. | 08-22-2013 |
20130224937 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Semiconductor layer forming gas is introduced into a reaction chamber, and the gas generates a plasma discharge, so that a semiconductor layer is formed. In addition to the gas, impurity gas is introduced into the chamber, and first conductivity type layer forming gas including the semiconductor layer forming gas and the impurity gas generates a plasma discharge, so that a first conductivity type layer of a first conductivity type is formed so as to cover the semiconductor layer. In the step of forming the first conductivity type layer, a composition set value of gas supplied to the chamber is shifted from a composition of the semiconductor layer forming gas to a composition of the first conductivity type layer forming gas in a state where a pressure in the chamber is not reduced to ultimate vacuum even after a plasma discharge processing for forming the semiconductor layer is terminated. | 08-29-2013 |
20140045324 | LOW TEMPERATURE EPITAXY OF A SEMICONDUCTOR ALLOY INCLUDING SILICON AND GERMANIUM EMPLOYING A HIGH ORDER SILANE PRECURSOR - A high order silane having a formula of Si | 02-13-2014 |
20140073120 | METHOD OF FABRICATING GALLIUM NITRIDE BASED SEMICONDUCTOR DEVICE - Exemplary embodiments of the present invention disclose a method of fabricating a gallium nitride (GaN) based semiconductor device. The method includes growing GaN based semiconductor layers on a first surface of a GaN substrate to form a semiconductor stack, and separating at least a first portion of the GaN substrate from the semiconductor stack using a wire cutting technique. | 03-13-2014 |
20140080295 | Surface Doping and Bandgap Tunability in Hydrogenated Graphene - A method of introducing a bandgap in single layer graphite on a SiO | 03-20-2014 |
20140127890 | METHOD AND APPARATUS FOR FABRICATING FREE-STANDING GROUP III NITRIDE CRYSTALS - The method for fabricating a free-standing group III nitride plate ( | 05-08-2014 |
20140179088 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE - The inventive concept provides methods for manufacturing a semiconductor substrate. The method may include forming a stop pattern surrounding an edge of a substrate, forming a transition layer an entire top surface of the substrate except the stop pattern, and forming an epitaxial semiconductor layer on the transition layer and the stop pattern. The epitaxial semiconductor layer may not be grown from the stop pattern. That is, the epitaxial semiconductor layer may be isotropically grown from a top surface and a sidewall of the transition layer by a selective isotropic growth method, so that the epitaxial semiconductor layer may gradually cover the stop pattern. | 06-26-2014 |
20140256119 | CYCLIC EPITAXIAL DEPOSITION AND ETCH PROCESSES - A cyclic deposition and etch method is provided. The method includes depositing an epitaxial layer over a substrate at a first temperature and etching a portion of the deposited epitaxial layer at a variable temperature higher than the first temperature. The step of etching is performed while varying the temperature. | 09-11-2014 |
20140256120 | Process for Preparing Graphene Based on Metal Film-Assisted Annealing and the Reaction with Cl2 - A method for preparing graphene by reaction with Cl | 09-11-2014 |
20140273419 | MULTIZONE CONTROL OF LAMPS IN A CONICAL LAMPHEAD USING PYROMETERS - A substrate processing apparatus is provided. The substrate processing apparatus includes a vacuum chamber having a dome and a floor. A substrate support is disposed inside the vacuum chamber. A plurality of thermal lamps are arranged in a lamphead and positioned proximate the floor of the vacuum chamber. A reflector is disposed proximate the dome, where the reflector and the dome together define a thermal control space. The substrate processing apparatus further includes a plurality of power supplies coupled to the thermal lamps and a controller for adjusting the power supplies to control a temperature in the vacuum chamber. | 09-18-2014 |
20140357067 | METHOD OF MANUFACTURING NITRIDE SUBSTRATE, AND NITRIDE SUBSTRATE - A method of manufacturing a nitride substrate includes the following steps. Firstly, a nitride crystal is grown. Then, the nitride substrate including a front surface is cut from the nitride crystal. In the step of cutting, the nitride substrate is cut such that an off angle formed between an axis orthogonal to the front surface and an m-axis or an a-axis is greater than zero. When the nitride crystal is grown in a c-axis direction, in the step of cutting, the nitride substrate is cut from the nitride crystal along a flat plane which passes through a front surface and a rear surface of the nitride crystal and does not pass through a line segment connecting a center of a radius of curvature of the front surface with a center of a radius of curvature of the rear surface of the nitride crystal. | 12-04-2014 |
20150017790 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes: preparing a Si substrate having a flat portion with flat front and back surfaces and a bevel portion located at a periphery of the flat portion; forming a III-V nitride semiconductor film on the front surface of the Si substrate by epitaxial growth; and after forming the III-V nitride semiconductor film, grinding the Si substrate from the back surface. Amounts of working at the bevel portion on the front surface and the back surface of an outermost end portion of the bevel portion are asymmetrical. A first thickness measured from the front surface of the flat portion to the outermost end portion is smaller than a second thickness measured from the back surface of the flat portion to the outermost end portion. | 01-15-2015 |
20150118831 | Method of Fabricating Thin, Freestanding, Single Crystal Silicon Sheet - A method of forming a free-standing silicon film that includes providing a Si substrate, depositing a layered structure on the Si substrate, where the layered structure includes a Si device layer and a SiGe sacrificial layer, and removing the SiGe sacrificial layer with a spin etch process, where the Si device layer is released from the layered structure. | 04-30-2015 |
20160042963 | METHOD OF MODIFYING EPITAXIAL GROWTH SHAPE ON SOURCE DRAIN AREA OF TRANSISTOR - Methods for forming semiconductor devices, such as FinFETs, are provided. An epitaxial film is formed over a semiconductor fin, and the epitaxial film includes a top surface having two facets. A cap layer is deposited on the top surface, and portions of the epitaxial film in a lateral direction are removed. Having a smaller lateral dimension prevents the epitaxial film from merging with an adjacent epitaxial film and creates a gap between the epitaxial film and the adjacent epitaxial film. | 02-11-2016 |
20160254138 | COLUMNAR CRYSTAL CONTAINING LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME | 09-01-2016 |