| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 438471000 | GETTERING OF SUBSTRATE | 78 |
| 20100105190 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING INSTALLATION - A semiconductor device manufacturing method is provided, including: providing a semiconductor substrate, forming on the semiconductor substrate a layer including a semiconductor compound and a dope additive, and thereafter forming an emitter region and gettering impurities by annealing the semiconductor substrate including the layer. | 04-29-2010 |
| 20130045586 | Process Of Internal Gettering For Czochralski Silicon Wafer - An internal gettering process for a Czochralski silicon wafers comprises: (1) heating a Cz silicon wafer to 1200-1250° C. at a heating rate of 50-100° C./s under a nitrogen atmosphere, maintaining for 30-150 seconds, cooling the Cz silicon wafer to 800-1000° C. first at a cooling rate of 5-50° C./s, and then cooling the Cz silicon wafer naturally; (2) annealing the Cz silicon wafer obtained in the step (1) at 800-900° C. under an argon atmosphere for a period of 8-16 hours. The present invention only involves two heat treatment steps which require lower temperature and shorter time comparing to the conventional processes. The density of the bulk microdefects and the width of the denuded zone can be easily controlled by the temperature, duration and cooling rate of rapid thermal processing in the first step. | 02-21-2013 |
| 20130102128 | METHOD FOR TREATING THE DISLOCATION IN A GAN-CONTAINING SEMICONDUCTOR LAYER - A method for treating the threading dislocation within a GaN-containing semiconductor layer is provided. The method includes a substrate is provided. A GaN-containing semiconductor layer with the threading dislocation is formed on the substrate. An etching process with an etching gas is performed to remove the threading dislocation in the GaN-containing semiconductor layer so as to increase the efficiency for the light emitting device. | 04-25-2013 |
| 20130102129 | PROCESSES FOR SUPPRESSING MINORITY CARRIER LIFETIME DEGRADATION IN SILICON WAFERS - Processes for suppressing minority carrier lifetime degradation in silicon wafers are disclosed. The processes involve quench cooling the wafers to increase the density of nano-precipitates in the silicon wafers and the rate at which interstitial atoms are consumed by the nano-precipitates. | 04-25-2013 |
| 20090233420 | P-TYPE SILICON WAFER AND METHOD FOR HEAT-TREATING THE SAME - This p-type silicon wafer was subjected to heat treatment to have a resistivity of 10 Ω·cm or more, a BMD density of 5×10 | 09-17-2009 |
| 20100120231 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device according to the present invention includes the following step: a step (S | 05-13-2010 |
| 20100087048 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - It has been difficult to manufacture a semiconductor device equipped with a microstructure having a space, an electric circuit for controlling the microstructure, and the like over one substrate. | 04-08-2010 |
| 20100136768 | METHOD FOR SIMULTANEOUS DOPING AND OXIDIZING SEMICONDUCTOR SUBSTRATES AND THE USE THEREOF - The invention relates to a method for simultaneous doping and oxidizing semiconductor substrates and also to doped and oxidized semiconductors substrates produced in this manner. Furthermore, the invention relates to the use of this method for producing solar cells. | 06-03-2010 |
| 20080233716 | Method for fabricating semiconductor device - The principal objects of the present invention are to provide structure of a semiconductor device capable of reducing a bowing of a wafer, and a method for fabricating the semiconductor device. The present invention is applied to a semiconductor device, which is fabricated with a semiconductor substrate having a silicon carbide (SiC) film. The method includes the steps of: forming the SiC film on a semiconductor wafer; discriminating a deformation condition of the semiconductor wafer; and forming grooves in the SiC film, the grooves having a shape determined in accordance with the deformation condition of the semiconductor wafer. | 09-25-2008 |
| 20120040511 | AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING SAME AND METHOD OF PRODUCING SAME - Seeds are implanted in a regular pattern upon an undersubstrate. An Al | 02-16-2012 |
| 20090162995 | Semiconductor Device Manufacturing Method and Semiconductor Manufacturing Apparatus - By hydrogen-terminating a semiconductor surface using a solution containing HF | 06-25-2009 |
| 20120070961 | LOW TEMPERATURE ETCHANT FOR TREATMENT OF SILICON-CONTAINING SURFACES - Embodiments provide methods for etching and depositing silicon materials on a substrate. In one example, the method includes heating a substrate containing a silicon-containing material to a temperature of about 800° C. or less and removing a portion of the silicon-containing material and a contaminant to reveal an exposed surface of the silicon-containing material during an etching process and depositing a silicon-containing layer on the exposed surface of the silicon-containing material during a deposition process. The method further provides conducting the etching and deposition processes in the same chamber and utilizing chlorine gas and a silicon source gas during the etching and deposition processes. In some examples, the silicon-containing material is removed at a rate within a range from about 2 Å per minute to about 20 Å per minute during the etching process. | 03-22-2012 |
| 20110065263 | METHOD FOR REPROCESSING SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING REPROCESSED SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING SOI SUBSTRATE - It is an object of the invention is to provide a method suitable for reprocessing a semiconductor substrate having favorable planarity. Another object of the invention is to manufacture a reprocessed semiconductor substrate by using the method suitable for reprocessing a semiconductor substrate having favorable planarity, and to manufacture an SOI substrate by using the reprocessed semiconductor substrate. A projecting portion of a semiconductor substrate is removed using a method capable of selectively removing a semiconductor region which is damaged by ion irradiation or the like. Further, an oxide film is formed on a surface of the semiconductor substrate when the semiconductor substrate is planarized by a polishing treatment typified by a CMP method, whereby the semiconductor substrate is evenly polished at a uniform rate. Moreover, a reprocessed semiconductor substrate is manufactured using the aforementioned method, and an SOI substrate is manufactured using the reprocessed semiconductor substrate. | 03-17-2011 |
| 20120122300 | FILM STRESS MANAGEMENT FOR MEMS THROUGH SELECTIVE RELAXATION - An apparatus comprising a microelectromechanical system. The microelectromechanical system includes a crystalline structural element having dislocations therein. For at least about 60 percent of adjacent pairs of the dislocations, direction vectors of the dislocations form acute angles of less than about 45 degrees. | 05-17-2012 |
| 20090130824 | ARSENIC AND PHOSPHORUS DOPED SILICON WAFER SUBSTRATES HAVING INTRINSIC GETTERING - A process for the preparation of low resistivity arsenic or phosphorous doped (N+/N++) silicon wafers which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, reliably form oxygen precipitates. | 05-21-2009 |
| 20090130823 | METHOD OF FORMING SEMICONDUCTOR DEVICE INCLUDING TRENCH GATE STRUCTURE - A method of forming a semiconductor device is provided, which may include, but is not limited to, the following processes. Grooves may be formed in an insulating region and in a semiconductor region, while forming burrs near the boundary between the insulating region and the semiconductor region. Protection films may be selectively formed on inside walls of the grooves except on bottom walls of the grooves. A selective thermal process may be carried out in the presence of the protection films, thereby removing the burrs. | 05-21-2009 |
| 20120178240 | Thermal Budget Optimization for Yield Enhancement on Bulk Silicon Wafers - A method of nucleating and growing oxygen precipitates of sufficient concentration and size in lightly doped p-type wafers for effective gettering of heavy metals is deep submicron transistor, integrated circuit manufacturing flows. | 07-12-2012 |
| 438472000 | By vibrating or impacting | 1 |
| 20120083099 | Printable Semiconductor Structures and Related Methods of Making and Assembling - The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices. | 04-05-2012 |
| 438473000 | By implanting or irradiating | 31 |
| 20090176350 | INTEGRATION OF ION GETTERING MATERIAL IN DIELECTRIC - A method embodiment deposits a first dielectric layer over a transistor and then implants a gettering agent into the first dielectric layer. After this first dielectric layer is formed, the method forms a second (thicker) dielectric layer over the first dielectric layer. After this, the standard contacts are formed through the insulating layer to the source, drain, gate, etc. of the transistor. Additionally, reactive ion etching, chemical mechanical processing, and other back-end-of-line processing are performed. The back-end-of-line processes can introduce mobile ions into the dielectric over a transistor; however, the gettering agent traps the mobile ions and prevents the mobile ions from contaminating the transistor. | 07-09-2009 |
| 20080311728 | METHOD FOR RECOVERING DAMAGE OF LOW DIELECTRIC INSULATING FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - There is provided a damage recovery method capable of recovering electrical characteristics of a low dielectric insulating film sufficiently while suppressing oxidation of buried metal and generation of pattern defaults. | 12-18-2008 |
| 20100112788 | METHOD TO REDUCE SURFACE DAMAGE AND DEFECTS - A method of implantation that minimizes surface damage to a workpiece is disclosed. In one embodiment, following a doping implant, a second implant is performed which causes the silicon at the surface of the workpiece to become amorphous. This reduces surface damage and interstitials, which has several benefits. First, inactive dopant clusters may become activated due to the replenishment of silicon. Secondly, the amorphous nature of the silicon makes it bond more easily in subsequent process steps, such as silicidation. | 05-06-2010 |
| 20100081259 | DISLOCATION ENGINEERING USING A SCANNED LASER - A method for generating patterned strained regions in a semiconductor device is provided. The method includes directing a light-emitting beam locally onto a surface portion of a semiconductor body; and manipulating a plurality of dislocations located proximate to the surface portion of the semiconductor body utilizing the light-emitting beam, the light-emitting beam being characterized as having a scan speed, so as to produce the patterned strained regions. | 04-01-2010 |
| 20090047772 | Method for Improving the Quality of a SiC Crystal - A method for improving the quality of a SiC layer by effectively reducing or eliminating the carrier trapping centers in the as-grown SiC crystal. The method includes the steps of: (a) carrying out ion implantation of carbon atoms, silicon atoms, hydrogen atoms, or helium atoms into a shallow surface layer of the SiC crystal layer to introduce carbon interstitials into the surface layer, and (b) growing the SiC layer upward from the edge face of the surface layer into which the carbon interstitials have been introduced, and diffusing out the carbon interstitials that have been introduced into the surface layer from the surface layer into the grown layer and combining the carbon interstitials and point defects to make the electrically active point defects in the grown layer inactive. | 02-19-2009 |
| 20100304552 | METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE DEDICATED TO SEMICONDUCTOR DEVICE, AND METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor substrate dedicated to a semiconductor device, in which multi-photon absorption is generated in a micro-region inside the semiconductor substrate by condensing laser beams in any micro-region inside the semiconductor substrate, and a gettering sink is formed by changing the crystal structure of only the micro-region. | 12-02-2010 |
| 20100178753 | SILICON WAFER AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a silicon wafer includes a step of annealing a silicon wafer which is sliced from a silicon single crystal ingot, thereby forming a DZ layer in a first surface and in a second surface of the silicon wafer and a step of removing either a portion of the DZ layer in the first surface or a portion of the DZ layer in the second surface. | 07-15-2010 |
| 20090311850 | METHOD FOR SURFACE TREATMENT OF SEMICONDUCTOR SUBSTRATES - Methods and apparatus for processing a substrate are provided herein. In some embodiments, a method of processing a substrate may include providing a substrate having at least one of a defect or a contaminant disposed on or near a surface of the substrate; and selectively annealing a portion of the substrate with a laser beam in the presence of a process gas comprising hydrogen. The laser beam may be moved over the substrate or continuously, or in a stepwise fashion. The laser beam may be applied in a continuous wave or pulsed mode. The process gas may further comprise an inert gas, such as, at least one of helium, argon, or nitrogen. A layer of material may be subsequently deposited atop the annealed substrate. | 12-17-2009 |
| 20110086494 | METHOD OF REMOVING HEAVY METAL IN SEMICONDUCTOR SUBSTRATE - To provide a method of removing a heavy metal contained in a thinned semiconductor substrate. | 04-14-2011 |
| 20110053350 | SILICON WAFER - A silicon wafer which has DZ layers formed on both sides thereof by heat treatment in an atmosphere of reducing gas (such as hydrogen) or rare gas (such as argon) with a specific temperature profile for heating, holding, and cooling, and which also has a gettering site of BMD in the bulk inside the DZ layer. A silicon wafer which has a silicon epitaxial layer formed on one side thereof. The DZ layer and the silicon epitaxial layer contain dissolved oxygen introduced into their surface parts, with the concentration and distribution of dissolved oxygen properly controlled. Introduction of oxygen into the surface part is accomplished by heat treatment and ensuing rapid cooling in an atmosphere of oxygen-containing gas. | 03-03-2011 |
| 20110053349 | APPLICATION OF MILLISECOND HEATING SOURCE FOR SURFACE TREATMENT - A method for fabricating semiconductor devices, e.g., strained silicon MOS device, includes providing a semiconductor substrate (e.g., silicon wafer) having a surface region, which has one or more contaminants and an overlying oxide layer. The one or more contaminants is at least a carbon species. The method also includes processing the surface region using at least a wet process to selectively remove the oxide layer and expose the surface region. The method further includes subjecting the surface region to a laser treatment process for a time period of less than 1 second to increase a temperature of the surface region to greater than 1000 degrees Celsius to remove the one or more contaminants provided on the surface region. The method also includes removing the laser treatment process to cause a reduction in temperature to about 300 to about 600 degrees Celsius in a time period of less than 1 second. | 03-03-2011 |
| 20080254598 | Laser Irradiation Method, Laser Irradiation Apparatus, And Semiconductor Device - An object of the present invention is obtaining a semiconductor film with uniform characteristics by improving irradiation variations of the semiconductor film. The irradiation variations are generated due to scanning while irradiating with a linear laser beam of the pulse emission. At a laser crystallization step of irradiating a semiconductor film with a laser light, a continuous light emission excimer laser emission device is used as a laser light source. For example, in a method of fabricating an active matrix type liquid crystal display device, a continuous light emission excimer laser beam is irradiated to a semiconductor film, which is processed to be a linear shape, while scanning in a vertical direction to the linear direction. Therefore, more uniform crystallization can be performed because irradiation marks can be avoided by a conventional pulse laser. | 10-16-2008 |
| 20090176351 | STRUCTURE AND METHOD TO IMPROVE MOSFET RELIABILITY - A method embodiment deposits a dielectric layer over a transistor and then implants a gettering agent into the dielectric layer. The insulating layer into which the gettering agent is implanted comprises a single continuous insulating layer and is the insulating layer that borders the next layer of metallization. After this dielectric layer is formed, standard contacts (tungsten) are formed through the insulating layer to the source, drain, gate, etc. of the transistor. Additionally, reactive ion etching of the contacts is performed. The reactive ion etching process can create mobile ions; however, the gettering agent traps the mobile ions and prevents the mobile ions from contaminating the transistor. | 07-09-2009 |
| 20100022072 | Semiconductor Fabrication - This document discloses devices fabricated on a semiconductor substrate and methods of fabricating the same. The devices can be memory cells having a tunnel window that is defined by dry-etching oxide to expose the semiconductor substrate and growing a tunnel oxide layer on the exposed semiconductor substrate. The semiconductor substrate can be decontaminated and/or repaired by exposing the semiconductor substrate to an optical irradiated energy source having a predefined energy that is sufficient to break molecular bonds of the contaminants and exposing the semiconductor substrate to a temperature that is sufficient to recrystallize the crystal lattice of the substrate. | 01-28-2010 |
| 20090197396 | Method for Producing Silicon Wafer - The present invention provides a method for producing a silicon wafer at least including a step of performing RTA heat treatment with respect to a silicon wafer in an atmospheric gas, wherein nitrogen gas is used as the atmospheric gas, which is mixed with oxygen at a concentration of less than 100 ppm so as to perform the heat treatment. Hereby a method for producing a high-quality wafer can be provided, where the RTA heat treatment subject to the silicon wafer can be performed at a low temperature or over a short period of time, so that generation of slip dislocation of the silicon wafer can be suppressed, and at the same time vacancies can be implanted inside the silicon wafer without using NH | 08-06-2009 |
| 20110092054 | Methods for fixing graphene defects using a laser beam and methods of manufacturing an electronic device - Methods of fixing graphene using a laser beam and methods of manufacturing an electronic device are provided, the method of fixing graphene includes fixing a defect of a graphene nanoribbon by irradiating the laser beam onto the graphene nanoribbon. | 04-21-2011 |
| 20100093156 | METHOD FOR PRODUCTION OF SILICON WAFER FOR EPITAXIAL SUBSTRATE AND METHOD FOR PRODUCTION OF EPITAXIAL SUBSTRATE - A method for producing a silicon wafer for epitaxial substrate which includes a first step of performing thermal oxidization on a silicon wafer containing boron atoms no less than 1E19 atoms/cm | 04-15-2010 |
| 20110183496 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SUBSTRATE CARRIER STRUCTURE - A substrate carrier structure includes a tray and a secondary electron absorbing material. The tray holds a semiconductor substrate having a first surface on which semiconductor device elements are formed. The secondary electron absorbing material is interposed between the tray and this first surface of the semiconductor substrate. When the semiconductor substrate is irradiated with charged particles to form lattice defects, the secondary electron absorbing material prevents unwanted trapping of secondary electrons emitted from the tray, and thereby reduces the variability of electrical characteristics of semiconductor device elements formed on the semiconductor substrate. | 07-28-2011 |
| 20090280623 | Method Of Producing Semiconductor Wafer - A semiconductor wafer is produced by irradiating a laser beam to either face of a semiconductor wafer so as to fit a focusing position into a given depth position of the semiconductor wafer to generate a multiphoton absorption process only in a specific portion of the semiconductor wafer at the given depth position to thereby form a gettering sink. | 11-12-2009 |
| 20100173475 | Method for Improving the Quality of a SiC Crystal - A method for improving the quality of a SiC layer by effectively reducing or eliminating the carrier trapping centers in the as-grown SiC crystal. The method includes the steps of: (a) carrying out ion implantation of carbon atoms, silicon atoms, hydrogen atoms, or helium atoms into a shallow surface layer of the SiC crystal layer to introduce carbon interstitials into the surface layer, and (b) growing the SiC layer upward from the edge face of the surface layer into which the carbon interstitials have been introduced, and diffusing out the carbon interstitials that have been introduced into the surface layer from the surface layer into the grown layer and combining the carbon interstitials and point defects to make the electrically active point defects in the grown layer inactive. | 07-08-2010 |
| 20100009520 | WAFER PROCESSING METHOD FOR IMPROVING GETTERING CAPABILITIES OF WAFERS MADE THEREFROM - A wafer processing method for improving gettering capabilities of wafers made therefrom is presented. The method includes the steps of preparing, annealing and ion-implanting. The preparing step involves preparing the wafer from a silicon ingot. The annealing step involves forming first gettering sites in both sides of the wafer by annealing the wafer. The ion-implanting step involves forming second gettering sites in a back side of the wafer in which the first gettering sites are already formed. | 01-14-2010 |
| 20100009521 | METHOD OF PRODUCING SEMICONDUCTOR WAFER - There is provided a production method in which the beveling step conducted for preventing the cracking or chipping in a raw wafer during the grinding can be omitted when the raw wafer cut out from a crystalline ingot is processed into a double-side mirror-finished semiconductor wafer and a semiconductor wafer can be obtained cheaply by shortening the whole of the production steps for the semiconductor wafer and decreasing the machining allowance of silicon material in the semiconductor wafer to reduce the kerf loss of the semiconductor material as compared with the conventional method. | 01-14-2010 |
| 20100203708 | AMORPHIZATION/TEMPLATED RECRYSTALLIZATION METHOD FOR HYBRID ORIENTATION SUBSTRATES - The present invention provides an improved amorphization/templated recrystallization (ATR) method for fabricating low-defect-density hybrid orientation substrates. ATR methods for hybrid orientation substrate fabrication generally start with a Si layer having a first orientation bonded to a second Si layer or substrate having a second orientation. Selected regions of the first Si layer are amorphized and then recrystallized into the orientation of the second Si layer by using the second Si layer as a template. The process flow of the present invention solves two major difficulties not disclosed by prior art ATR methods: the creation of “corner defects” at the edges of amorphized Si regions bounded by trenches, and undesired orientation changes during a high temperature post-recrystallization defect-removal annealing of non-ATR'd regions not bounded by trenches. In particular, this invention provides a process flow comprising the steps of (i) amorphization and low-temperature recrystallization performed in substrate regions free of trenches, (ii) formation of trench isolation regions that subsume the defective regions at the edge of the ATR'd regions, and (iii) a high-temperature defect-removal anneal performed with the trench isolation regions in place. | 08-12-2010 |
| 438474000 | Ionized radiation (e.g., corpuscular or plasma treatment, etc.) | 8 |
| 20110244660 | MANUFACTURING METHOD OF SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - An object is to provide a manufacturing method of a semiconductor substrate provided with a single crystal semiconductor layer with a surface having a high degree of flatness. Another object is to manufacture a semiconductor device with high reliability by using the semiconductor substrate provided with a single crystal semiconductor layer with a high degree of flatness. In a manufacturing process of a semiconductor substrate, a thin embrittled region containing a large crystal defect is formed in a single crystal semiconductor substrate at a predetermined depth by subjecting the single crystal semiconductor substrate to a rare gas ion irradiation step, a laser irradiation step, and a hydrogen ion irradiation step. Then, by performing a separation heating step, a single crystal semiconductor layer that is on a surface side than the embrittled region is transferred to a base substrate. | 10-06-2011 |
| 20090246939 | METHOD FOR DEHYDROGENATION TREATMENT AND METHOD FOR FORMING CRYSTALLINE SILICON FILM - A dehydrogenation treatment method which includes forming a hydrogenated amorphous silicon film above a non-heat-resistant substrate, and eliminating bonded hydrogen from the hydrogenated amorphous silicon film by irradiating an atmospheric thermal plasma discharge to the hydrogenated amorphous silicon film for a time period of 1 to 500 ms. The surface of the substrate is heated at a temperature of 1000 to 2000° C. by irradiating the atmospheric thermal plasma discharge. | 10-01-2009 |
| 20090104754 | METHOD TO IMPROVE ELECTRICAL LEAKAGE PERFORMANCE AND TO MINIMIZE ELECTROMIGRATION IN SEMICONDUCTOR DEVICES - Embodiments of methods for improving electrical leakage performance and minimizing electromigration in semiconductor devices are generally described herein. Other embodiments may be described and claimed. | 04-23-2009 |
| 20100173476 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device according to the invention irradiates a first pulse laser beam with an irradiation energy density of 1.0 J/cm | 07-08-2010 |
| 438475000 | Hydrogen plasma (i.e., hydrogenization) | 4 |
| 20110275195 | METHOD OF TREATING A SEMICONDUCTOR DEVICE - A method of treating a semiconductor device wherein there is provided a semiconductor device, the semiconductor device being at least in part chemically bonded to an undesired chemical species. The semiconductor device is subjected to light of a wavelength sufficient to cleave at least some of the chemical bonds between the semiconductor device and the undesired chemical species, and the semiconductor device is exposed to a source of a desired chemical species, such that the semiconductor device becomes at least in part chemically bonded to the desired chemical species. | 11-10-2011 |
| 20110008950 | Remote Hydrogen Plasma With Ion Filter for Terminating Silicon Dangling Bonds - Apparatus and methods for repairing silicon dangling bonds resulting from semiconductor processing are disclosed. The silicon dangling bonds can be repaired by introducing hydrogen radicals with substantially no hydrogen ions into the processing chamber to react with the silicon dangling bonds, eliminating them. | 01-13-2011 |
| 20080242059 | Methods of forming nickel silicide layers with low carbon content - A method for forming a nickel silicide layer on a MOS device with a low carbon content comprises providing a substrate within an ALD reactor and performing an ALD process cycle to form a nickel layer on the substrate, wherein the ALD process cycle comprises pulsing a nickel precursor into the reactor, purging the reactor after the nickel precursor, pulsing a mixture of hydrogen and silane into the reactor, and purging the reactor after the hydrogen and silane pulse. The ALD process cycle can be repeated until the nickel layer reaches a desired thickness. The silane used in the ALD process functions as a getterer for the advantageous carbon, resulting in a nickel layer that has a low carbon content. The nickel layer may then be annealed to form a nickel silicide layer with a low carbon content. | 10-02-2008 |
| 20110053351 | Solar Cell Defect Passivation Method - The present disclosure passivates solar cell defects. Plasma immersion ion implantation (PIII) is used to repair the defects during or after making the solar cell. Hydrogen ion is implanted into absorption layer with different sums of energy to fill gaps of defects or surface recombination centers. Thus, solar cell defects are diminished and carriers are transferred with improved photovoltaic conversion efficiency. | 03-03-2011 |
| 438476000 | By layers which are coated, contacted, or diffused | 19 |
| 20130089971 | DEVICES INCLUDING, METHODS USING, AND COMPOSITIONS OF REFLOWABLE GETTERS - Methods for protecting circuit device materials, optoelectronic devices, and caps using a reflowable getter are described. The methods, devices and caps provide advantages because they enable modification of the shape and activity of the getter after sealing of the device. Some embodiments of the invention provide a solid composition comprising a reactive material and a phase changing material. The combination of the reactive material and phase changing material is placed in the cavity of an electronic device. After sealing the device by conventional means (epoxy seal for example), the device is subjected to thermal or electromagnetic energy so that the phase changing material becomes liquid, and consequently: exposes the reactive material to the atmosphere of the cavity, distributes the getter more equally within the cavity, and provides enhanced protection of sensitive parts of the device by flowing onto and covering these parts, with a thin layer of material. | 04-11-2013 |
| 20090269908 | Manufacturing method of a semiconductor device - A manufacturing method of a semiconductor device comprises a process of doping conductive impurities in a silicon carbide substrate, a process of forming a cap layer on a surface of the silicon carbide substrate, a process of activating the conductive impurities doped in the silicon carbide substrate, a process of oxidizing the cap layer after a first annealing process, and a process of removing the oxidized cap layer. It is preferred that the cap layer is formed from material that includes metal carbide. Since the oxidation onset temperature of metal carbide is comparatively low, the oxidization of the cap layer becomes easy if metal carbide is included in the cap layer. Specifically, it is preferred that the cap layer is formed from metal carbide that has an oxidation onset temperature of 1000 degrees Celsius or below, such as tantalum carbide. | 10-29-2009 |
| 20100279492 | Method of Fabricating Upgraded Metallurgical Grade Silicon by External Gettering Procedure - Upgraded metallurgical grade silicon (UMG-Si) is fabricated by a ‘green’ (environmental protected) external gettering procedure. Impurities concentration of the fabricated UMG-Si is reduced for 100 times than its source material. The UMG-Si obtained has a purity ratio reaching 4N to 6N. Thus, substrates made of the UMG-Si can be used in solar cells and related photoelectrical applications. | 11-04-2010 |
| 20120295416 | ADHESIVE SHEET FOR PRODUCING SEMICONDUCTOR DEVICE - An object of the present invention is to provide an adhesive sheet that can capture cations mixed in from outside during various processes of manufacturing a semiconductor device to prevent deterioration in electrical characteristics of a semiconductor device to be manufactured and to improve product reliability. It is an adhesive sheet for producing a semiconductor device, in which when 2.5 g of the adhesive sheet is soaked in 50 ml of an aqueous solution containing 10 ppm of copper ions, and the solution is left at 120° C. for 20 hours, the concentration of copper ions in the aqueous solution is 0 to 9.9 ppm. | 11-22-2012 |
| 20110171814 | SILICON EPITAXIAL WAFER AND PRODUCTION METHOD FOR SAME - A method for preparing a silicon epitaxial wafer that includes a silicon single crystal wafer sliced from a CZ silicon ingot doped with carbon in a concentration range of not less than 5×10 | 07-14-2011 |
| 20090209090 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A problem in the conventional technique is that metal contamination on a silicon carbide surface is not sufficiently removed in a manufacturing method of a semiconductor device using a monocrystalline silicon carbide substrate. Accordingly, there is a high possibility that the initial characteristics of a manufactured silicon carbide semiconductor device are deteriorated and the yield rate is decreased. Further, it is conceivable that the metal contamination has an adverse affect even on the long-term reliability of a semiconductor device. In a manufacturing method of a semiconductor device using a monocrystalline silicon carbide substrate, there is applied a metal contamination removal process, on a silicon carbide surface, including a step of oxidizing the silicon carbide surface and a step of removing a film primarily including silicon dioxide formed on the silicon carbide surface by the step. | 08-20-2009 |
| 20090186466 | SELF-MASKING DEFECT REMOVING METHOD - A method for removing defects from a semiconductor surface is disclosed. The surface of the semiconductor is first coated with a protective layer, which is later thinned to selectively reveal portions of the protruding defects. The defects are then removed by etching. Finally, also the protective layer is removed. According to the method, inadvertent thinning of the surface is prevented and removal of the defects is obtained. | 07-23-2009 |
| 20110076838 | Gettering structures and methods and their application - An embodiment of a semiconductor device includes a semiconductor substrate, a first insulating layer formed over the semiconductor substrate, and a first semiconductor layer formed over the first insulation layer. At least one gettering region is formed in at least one of the first insulating layer and the first semiconductor layer. The gettering region includes a plurality of gettering sites, and at least one gettering site includes one of a precipitate, a dispersoid, an interface with the dispersoid, a stacking fault and a dislocation. | 03-31-2011 |
| 20120034761 | METHOD OF REMOVING CONTAMINANTS AND NATIVE OXIDES FROM A SUBSTRATE SURFACE - Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include exposing a substrate having an oxide layer thereon to an oxidizing source. The oxidizing source oxidizes an upper portion of the substrate beneath the oxide layer to form an oxide layer having an increased thickness. The oxide layer with the increased thickness is then removed to expose a clean surface of the substrate. The removal of the oxide layer generally includes removal of contaminants present in and on the oxide layer, especially those contaminants present at the interface of the oxide layer and the substrate. An epitaxial layer may then be formed on the clean surface of the substrate. | 02-09-2012 |
| 20100105191 | METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL WAFER - The present invention provides a method for manufacturing a silicon single crystal wafer, in which a silicon single crystal wafer that is fabricated based on a Czochralski method and has an entire plane in a radial direction formed of an N region is subjected to a rapid thermal annealing in an oxidizing atmosphere, an oxide film formed in the rapid thermal annealing in the oxidizing atmosphere is removed, and then a rapid thermal annealing is carried out in a nitriding atmosphere, an Ar atmosphere, or a mixed atmosphere of these atmospheres. As a result, there can be provided the manufacturing method that can inexpensively manufacture a silicon single crystal wafer both in which a DZ layer is formed in a wafer surface layer to provide excellent device characteristics and in which an oxide precipitate functioning as a gettering site can be sufficiently formed in a bulk region. | 04-29-2010 |
| 20090029528 | METHOD AND APPARATUS FOR CLEANING A SUBSTRATE SURFACE - The present invention generally provides apparatus and method for forming a clean and damage free surface on a semiconductor substrate. One embodiment of the present invention provides a system that contains a cleaning chamber that is adapted to expose a surface of substrate to a plasma cleaning process prior to forming an epitaxial layer thereon. In one embodiment, a method is employed to reduce the contamination of a substrate processed in the cleaning chamber by depositing a gettering material on the inner surfaces of the cleaning chamber prior to performing a cleaning process on a substrate. In one embodiment, oxidation and etching steps are repeatedly performed on a substrate in the cleaning chamber to expose or create a clean surface on a substrate that can then have an epitaxial placed thereon. In one embodiment, a low energy plasma is used during the cleaning step. | 01-29-2009 |
| 20100190320 | METHODS OF REMOVING WATER FROM SEMICONDUCTOR SUBSTRATES AND METHODS OF DEPOSITING ATOMIC LAYERS USING THE SAME - Provided are methods of removing water adsorbed or bonded to a surface of a semiconductor substrate, and methods of depositing an atomic layer using the method of removing water described herein. The method of removing water includes applying a chemical solvent to the surface of a semiconductor substrate, and removing the chemical solvent from the surface of the semiconductor substrate. | 07-29-2010 |
| 20120302043 | PROCESS FOR DECARBURIZATION OF A SILICON MELT - The present invention relates to a novel process for decarburizing a silicon melt, and to the use thereof for production of silicon, preferably solar silicon or semiconductor silicon. | 11-29-2012 |
| 20120302042 | ADHESIVE COMPOSITION FOR PRODUCING SEMICONDUCTOR DEVICE AND ADHESIVE SHEET FOR PRODUCING SEMICONDUCTOR DEVICE - An object of the present invention is to provide an adhesive composition that can form an adhesive sheet for producing a semiconductor device capable of suppressing deterioration in ion scavengeability after the adhesive sheet goes through thermal history. It is an adhesive composition for producing a semiconductor device containing at least an organic complex-forming compound that forms a complex with cations, and the 5% weight loss temperature of the organic complex-forming compound measured by thermogravimetry is 180° C. or more. | 11-29-2012 |
| 20120164818 | Process for Cleaning Wafers - Disclosed is a process for cleaning a wafer having an uneven pattern at its surface. The process includes at least: a step of cleaning the wafer; a step of substituting a cleaning liquid retained in recessed portions of the wafer with a water-repellent liquid chemical after cleaning; and a step of drying the wafer. The process is characterized in that the cleaning liquid has a boiling point of 55 to 200° C., and characterized in that the water-repellent liquid chemical used for the substitution has a temperature of not lower than 40° C. and lower than a boiling point of the water-repellent liquid chemical thereby imparting water repellency at least to surfaces of the recessed portions. With this process, it is possible to provide a cleaning process for improving the cleaning step that tends to induce a pattern collapse. | 06-28-2012 |
| 20090023273 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device comprising forming a transistor on a semiconductor substrate, forming an interlayer insulating film on the semiconductor substrate to cover the transistor, forming a passivation film on the interlayer insulating film, and annealing the semiconductor substrate having the passivation film in a gas atmosphere comprising at least one gas selected from the group of boron, silicon and hydrogen. | 01-22-2009 |
| 20110045657 | METHOD FOR FABRICATING REWRITABLE THREE-DIMENSIONAL MEMORY DEVICE - A method for fabricating a three-dimensional semiconductor memory device including three-dimensionally arranged transistors includes forming a thin film structure comprising a plurality of thin films on a semiconductor substrate, patterning the thin film structure such that a penetration region is formed to expose the semiconductor substrate, forming a polycrystalline semiconductor layer to cover the resultant structure where the penetration region is formed, patterning the semiconductor layer to locally form a semiconductor pattern within the penetration region, and performing a post-treatment process to treat the semiconductor layer or the semiconductor pattern with a post-treatment material containing hydrogen or deuterium. | 02-24-2011 |
| 20100233869 | METHOD OF FABRICATING EPI-WAFER, EPI-WAFER FABRICATED BY THE METHOD, AND IMAGE SENSOR FABRICATED USING THE EPI-WAFER - A method of fabricating an epi-wafer includes providing a wafer including boron by cutting a single crystal silicon ingot, growing an insulating layer on one surface of the wafer, performing thermal treatment of the wafer, removing the insulating layer formed on one surface of the wafer, mirror-surface-grinding one surface of the wafer, and growing an epitaxial layer on one surface of the wafer and forming a high-density boron layer within the wafer that corresponds to the interface between the wafer and the epitaxial layer. | 09-16-2010 |
| 20120149175 | METHOD OF CLEANING SILICON CARBIDE SEMICONDUCTOR - A method of cleaning a SiC semiconductor includes the steps of forming an oxide film at the surface of a SiC semiconductor, and removing the oxide film. At the step of forming an oxide film, an oxide film is formed using ozone water having a concentration greater than or equal to 30 ppm. The forming step preferably includes the step of heating at least one of the surface of the SiC semiconductor and the ozone water. Thus, there can be obtained a method of cleaning a SiC semiconductor that can exhibit cleaning effect on the SiC semiconductor. | 06-14-2012 |
| 438477000 | By vapor phase surface reaction | 10 |
| 20130040438 | EPITAXIAL PROCESS WITH SURFACE CLEANING FIRST USING HCl/GeH4/H2SiCl2 - A method of depositing an epitaxial layer that includes chemically cleaning the deposition surface of a semiconductor substrate and treating the deposition surface of the semiconductor substrate with a hydrogen containing gas at a pre-bake temperature. The hydrogen containing gas treatment may be conducted in an epitaxial deposition chamber. The hydrogen containing gas removes oxygen-containing material from the deposition surface of the semiconductor substrate. The deposition surface of the semiconductor substrate may then be treated with a gas flow comprised of at least one of hydrochloric acid (HCl), germane (GeH | 02-14-2013 |
| 20080254599 | Thermal Processing of Silicon Wafers - Apparatus and methods that minimize surface defect development in silicon wafers during thermal processing at relatively high temperatures at which silicon wafers are annealed and at less extreme temperature, or for other purposes. The apparatus and methods have utility to horizontally-disposed furnaces for silicon wafers and to vertically-oriented furnaces in which larger wafers can be thermally processed. A selectively-sealable process tube encloses silicon wafers during heating of the silicon wafers to a predetermined temperature, and a heating atmosphere supply system induces through the process tube a positive flow of a process gas, such as hydrogen or argon, that is non-reactive with solid silicon at the predetermined temperature. A process tube outlet vents gas from the process tube, and an impurity sensor in the process tube outlet detects oxygen and moisture in the vented gas to verify the purity of the atmosphere surrounding the wafers during thermal processing. | 10-16-2008 |
| 20090162996 | REMOVAL OF SURFACE DOPANTS FROM A SUBSTRATE - A method and apparatus for removing excess dopant from a doped substrate is provided. In one embodiment, a substrate is doped by surfaced deposition of dopant followed by formation of a capping layer and thermal diffusion drive-in. A reactive etchant mixture is provided to the process chamber, with optional plasma, to etch away the capping layer and form volatile compounds by reacting with excess dopant. In another embodiment, a substrate is doped by energetic implantation of dopant. A reactive gas mixture is provided to the process chamber, with optional plasma, to remove excess dopant adsorbed on the surface and high-concentration dopant near the surface by reacting with the dopant to form volatile compounds. The reactive gas mixture may be provided during thermal treatment, or it may be provided before or after at temperatures different from the thermal treatment temperature. The volatile compounds are removed. Substrates so treated do not form toxic compounds when stored or transported outside process equipment. | 06-25-2009 |
| 20100151657 | METHOD OF IMPROVING INTRINSIC GETTERING ABILITY OF WAFER - A method of improving the intrinsic gettering ability of a wafer is described. A first annealing step is performed to the wafer at a first temperature in an atmosphere containing at least one of oxygen gas and nitrogen gas. A second annealing step is performed to the wafer, at a second temperature higher than the first temperature, in the atmosphere. | 06-17-2010 |
| 20080220592 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND SUBSTRATE PLANARIZATION METHOD - A substrate processing apparatus has a processing space provided with a holding stand for holding a substrate to be processed. A hydrogen catalyzing member is arranged in the processing space to face the substrate and for decomposing hydrogen molecules into hydrogen radicals H*. A gas feeding port is arranged in the processing space on an opposite side of the hydrogen catalyzing member to the substrate for feeding a processing gas including at least hydrogen gas. An interval between the hydrogen catalyzing member and the substrate on the holding stand is set less than the distance that the hydrogen radicals H* can reach. | 09-11-2008 |
| 20110256691 | REMOVAL OF SURFACE DOPANTS FROM A SUBSTRATE - A method and apparatus for removing excess dopant from a doped substrate is provided. In one embodiment, a substrate is doped by surfaced deposition of dopant followed by formation of a capping layer and thermal diffusion drive-in. A reactive etchant mixture is provided to the process chamber, with optional plasma, to etch away the capping layer and form volatile compounds by reacting with excess dopant. In another embodiment, a substrate is doped by energetic implantation of dopant. A reactive gas mixture is provided to the process chamber, with optional plasma, to remove excess dopant adsorbed on the surface and high-concentration dopant near the surface by reacting with the dopant to form volatile compounds. The reactive gas mixture may be provided during thermal treatment, or it may be provided before or after at temperatures different from the thermal treatment temperature. The volatile compounds are removed. Substrates so treated do not form toxic compounds when stored or transported outside process equipment. | 10-20-2011 |
| 20090104755 | HIGH QUALITY SILICON OXIDE FILMS BY REMOTE PLASMA CVD FROM DISILANE PRECURSORS - A method of depositing a silicon and nitrogen containing film on a substrate. The method includes introducing silicon-containing precursor to a deposition chamber that contains the substrate, wherein the silicon-containing precursor comprises at least two silicon atoms. The method further includes generating at least one radical nitrogen precursor with a remote plasma system located outside the deposition chamber. Moreover, the method includes introducing the radical nitrogen precursor to the deposition chamber, wherein the radical nitrogen and silicon-containing precursors react and deposit the silicon and nitrogen containing film on the substrate. Furthermore, the method includes annealing the silicon and nitrogen containing film in a steam environment to form a silicon oxide film, wherein the steam environment includes water and acidic vapor. | 04-23-2009 |
| 20100035409 | CRYSTALLINE SILICON SUBSTRATES WITH IMPROVED MINORITY CARRIER LIFETIME - A method for improving the minority lifetime of silicon containing wafer having metallic contaminants therein is described incorporating annealing at 1200° C. or greater and providing a gaseous ambient of oxygen, an inert gas and a chlorine containing gas such as HCl. | 02-11-2010 |
| 20100173477 | Method of Manufacturing Semiconductor Device and Semiconductor Manufacturing Apparatus - A cause of deteriorating the hydrogen termination on the surface of a wafer is found to be water adsorbed on the surface. By exposing the wafer to an inert gas atmosphere containing an H | 07-08-2010 |
| 20130017672 | PLASMA TREATMENT METHOD, PLASMA TREATMENT APPARATUS, AND SEMICONDUCTOR DEVICE MANUFACTURING METHODAANM Kuboi; NobuyukiAACI KanagawaAACO JPAAGP Kuboi; Nobuyuki Kanagawa JPAANM Fukusawa; MasanagaAACI TokyoAACO JPAAGP Fukusawa; Masanaga Tokyo JP - A plasma treatment method includes: creating a plasma from a mixed gas containing carbon and nitrogen to generate CN active species, and treating a surface of a semiconductor substrate with the CN active species. | 01-17-2013 |
