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With attachment to temporary support or carrier

Subclass of:

438 - Semiconductor device manufacturing: process

438460000 - SEMICONDUCTOR SUBSTRATE DICING

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DocumentTitleDate
20100055877WAFER PROCESSING METHOD - Disclosed herein is a wafer processing method for dividing a wafer along a plurality of streets. The wafer processing method includes a back grinding step of grinding the back side of the wafer in an area corresponding to a device area to thereby reduce the thickness of the device area to a predetermined finished thickness and to simultaneously form an annular reinforcing portion on the back side of the wafer in an area corresponding to a peripheral marginal area, a wafer supporting step of attaching the back side of the wafer to a dicing tape, a kerf forming step of cutting the front side of the wafer along each street to thereby form a kerf having a depth corresponding to the thickness of the device area along each street, thereby dividing the device area into individual devices, and a peripheral marginal area removing step of peeling off the peripheral marginal area from the dicing tape.03-04-2010
20120184086PUNCH SINGULATION SYSTEM AND METHOD - A punching system for singulating IC units comprising: a punching assembly arranged to receive a substrate and singulate said substrate into the IC units; a rotary carrier rotatable from a first position to a second position said rotary carrier arranged to receive said units at the first position and carry said units to the second position through rotation; wherein said rotary carrier includes recesses for receiving at least a portion of the units. A punching assembly comprising a die block having recesses for receiving selectively replaceable inserts wherein said inserts correspond to a punch pattern specific to a predetermined IC package arrangement.07-19-2012
20100093154DICING/DIE BONDING FILM - A dicing die-bonding film in which the adhesive properties during the dicing step and the peeling properties during the pickup step are controlled so that both become good, and a production method thereof, are provided. The dicing die-bonding film in the present invention is a dicing die-bonding film having a pressure-sensitive adhesive layer on a base material and a die bond layer on the pressure-sensitive adhesive layer, in which the arithmetic mean roughness X (μm) on the pressure-sensitive adhesive layer side in the die bond layer is 0.015 μm to 1 μm, the arithmetic mean roughness Y (μm) on the die bond layer side in the pressure-sensitive adhesive layer is 0.03 μm to 1 μm, and the absolute value of the difference of the X and Y is 0.015 or more.04-15-2010
20100099240DICING/DIE-BONDING TAPE AND METHOD FOR MANUFACTURING SEMICONDUCTOR CHIP - Obtained is a dicing and die bonding tape that makes it possible to pick up a semiconductor chip easily and reliably in dicing a semiconductor wafer to pickup the semiconductor chip together with the whole die bonding film. A dicing and die bonding tape used in dicing of a wafer, in obtaining a semiconductor chip, and in die bonding of the semiconductor chip, the dicing and die bonding tape having a die bonding film 04-22-2010
20100041211LAMINATE BODY, METHOD, AND APPARATUS FOR MANUFACTURING ULTRATHIN SUBSTRATE USING THE LAMINATE BODY - Provided is a laminated body comprising a substrate to be ground and a support, where the substrate is ground to a very small thickness and can then be separated from the support without damaging the substrate. One embodiment of the present invention is a laminated body comprising a substrate to be ground, a joining layer in contact with the substrate to be ground, a photothermal conversion layer comprising a light absorbing agent and a heat decomposable resin, and a light transmitting support. After grinding the substrate surface which is opposite that in contact with the joining layer, the laminated body is irradiated through the light transmitting layer and the photothermal conversion layer decomposes to separate the substrate and the light transmitting support.02-18-2010
20130045585ADHESIVE SHEET, DICING TAPE INTEGRATED TYPE ADHESIVE SHEET, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE - The invention provides an adhesive sheet which can be stuck to a wafer at low temperatures of 100° C. or below, which is soft to the extent that it can be handled at room temperature, and which can be cut simultaneously with a wafer under usual cutting conditions; a dicing tape integrated type adhesive sheet formed by lamination of the adhesive sheet and a dicing tape; and a method of producing a semiconductor device using them. In order to achieve this object, the invention is characterized by specifying the breaking strength, breaking elongation, and elastic modulus of the adhesive sheet in particular numerical ranges.02-21-2013
20130183812METHOD FOR MANUFACTURING ELECTRONIC PARTS - A method for manufacturing electronic parts, which is characteristic in that it permits reduction of contamination to the semi-cured adhesive layer formed on semiconductor wafer and the cohesive sheet used therein is superior in adhesiveness for example to the lead frame, the method comprising a semi-cured adhesive layer-forming step of forming a semi-cured adhesive layer by coating a pasty adhesive entirely over the rear face of a wafer and curing the pasty adhesive partially by radiation-ray irradiation or heating into the sheet shape, a fixing step of fixing the semi-cured adhesive layer formed on a wafer and a ring frame by bonding them to the cohesive layer of a cohesive sheet, a dicing step of dicing the wafer together with the semi-cured adhesive layer with a dicing blade into semiconductor chips, and a pick-up step of picking up the chips carrying the semi-cured adhesive layer from the cohesive layer of the cohesive sheet after radiation-ray irradiation, wherein the photopolymerization initiator in the cohesive layer of the cohesive sheet has a particular property.07-18-2013
20090081852HOLDING JIG, SEMICONDUCTOR WAFER GRINDING METHOD, SEMICONDUCTOR WAFER PROTECTING STRUCTURE AND SEMICONDUCTOR WAFER GRINDING METHOD AND SEMICONDUCTOR CHIP FABRICATION METHOD USING THE STRUCTURE - A backgrinding machine 03-26-2009
20110021005ADHESIVE COMPOSITION, PROCESS FOR PRODUCING THE SAME, ADHESIVE FILM USING THE SAME, SUBSTRATE FOR MOUNTING SEMICONDUCTOR AND SEMICONDUCTOR DEVICE - Disclosed is an adhesive composition which includes (a) an epoxy resin, (b) a curing agent and (c) a polymer compound incompatible with said epoxy resin, and further optionally includes (d) a filler and/or (e) a curing accelerator. Also disclosed are a process for producing an adhesive composition, including mixing (a) the epoxy resin and (b) the curing agent with (d) the filler, followed by mixing the resultant mixture with (c) the polymer compound incompatible with the epoxy resin; an adhesive film including the above-mentioned adhesive composition formed into a film; a substrate for mounting a semiconductor including a wiring board and the above-mentioned adhesive film disposed thereon on its side where chips are to be mounted; and a semiconductor device which includes the above-mentioned adhesive film or the substrate for mounting a semiconductor.01-27-2011
20120238073Method and Apparatus for Plasma Dicing a Semi-conductor Wafer - The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a cover ring disposed above the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.09-20-2012
20110136322Adhesive Sheet for a Stealth Dicing and a Production Method of a Semiconductor Wafer Device - An adhesive sheet is provided enabling to efficiently produce the very small size semiconductor chip by a stealth dicing method. An adhesive sheet for a stealth dicing includes a substrate and an adhesive layer formed on one side of the substrate, wherein a Young's modulus of the adhesive sheet at 23° C. is 200 to 600 MPa, and a storage elastic modulus of the adhesive layer at 23° C. is 0.10 to 50 MPa.06-09-2011
20100279491DIE ATTACH FILM-PROVIDED DICING TAPE AND PRODUCTION PROCESS OF SEMICONDUCTOR DEVICE - The present invention provides a die attach film-provided dicing tape, which includes a dicing tape, a supporting tape and a die attach film laminated in this order, wherein the supporting tape is a tape having a self-rolling peelability, and a process for producing a semiconductor device by using the die attach film-provided dicing tape.11-04-2010
20100009519METHOD OF THINNING A SEMICONDUCTOR WAFER - A method for manufacturing a thin semiconductor wafer. A semiconductor wafer is thinned from its backside followed by the formation of a cavity in a central region of the backside of the semiconductor wafer. Forming the cavity also forms a ring support structure in a peripheral region of the semiconductor wafer. An electrically conductive layer is formed in at least the cavity. The front side of the semiconductor wafer is mated with a tape that is attached to a film frame. The ring support structure of the semiconductor wafer is thinned to form the thinned semiconductor wafer. A backside tape is coupled to semiconductor wafer and to the film frame and the tape coupled to the front side of the semiconductor wafer is removed. The thinned semiconductor wafer is singulated.01-14-2010
20110287609WAFER PROCESSING METHOD - A processing method for a wafer having a device area where a plurality of devices are formed on the front side of the wafer and a peripheral marginal area surrounding the device area. The processing method includes a reinforcing plate forming step of applying a heat-resistant bond to the front side of the wafer and solidifying the heat-resistant bond to thereby form a reinforcing plate from only the heat-resistant bond, a back grinding step of holding the reinforcing plate on a chuck table and grinding the back side of the wafer in the device area to thereby form a circular recess in the device area and leave an annular reinforcing portion in the peripheral marginal area, a through electrode forming step of forming a through electrode connected to an electrode of each device formed on the front side of the wafer, from the back side of the wafer fixed to the reinforcing plate, and a reinforcing plate removing step of supplying a solvent for dissolving the heat-resistant bond to the reinforcing plate, thereby removing the reinforcing plate.11-24-2011
20100330780MULTI-FUNCTION TAPE FOR A SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME - A multifunction tape for a semiconductor package and configured to bond to a device-formed side of a semiconductor substrate having a plurality of devices thereon while performing a process of grinding a side of the semiconductor substrate opposite to the device-formed side and a process of dicing the semiconductor substrate into individual chips with a dicing tape having a UV-curable adhesive layer bonded to the ground side of the semiconductor substrate, the multifunction tape being bonded to the individual chips while the individual chips, separated from each other by the dicing process, are picked up and die-attached and a method of manufacturing a semiconductor device using the same, the multifunction tape including a base film; a UV-curable adhesive layer on one side of the base film; and first and second bonding layers on the adhesive layer.12-30-2010
20090298264METHOD OF CUTTING ADHESIVE FILM ON A SINGULATED WAFER BACKSIDE - On the back surface of the chip of which a front surface is formed with an electronic circuit, an adhesive film of a shape and dimensions corresponding to at least the back surface of the chip is adhered to obtain the semiconductor chip with the entire back surface covered with the adhesive film. Such a semiconductor chip is obtained by forming a division groove in the front surface of a semiconductor wafer to be divided into plural chips, grinding a back surface of the wafer until the division groove appears to divide the wafer into plural chips, adhering the adhesive film and a dicing tape on the entire back surface of the wafer, and stretching the dicing tape to cut the adhesive film along the division groove.12-03-2009
20090068819Tape structures, and methods and apparatuses for separating a wafer using the same - Example embodiments provide tape structures including a base layer, a neutralizing layer and an adhesive layer. The base layer may support an object. The neutralizing layer may be arranged on the base layer. The neutralizing layer may be grounded to neutralize charges between the base layer and the object. The adhesive layer may be arranged on the neutralizing layer. The object may be attached to the adhesive layer. Example embodiments also provide methods of manufacturing the tape structures, methods of separating a wafer, and apparatuses for separating a wafer.03-12-2009
20090149003DICING DIE-BONDING FILM - The invention relates to a dicing die-bonding film having a pressure-sensitive adhesive layer (06-11-2009
20130189830Methods of Forming Semiconductor Devices - In accordance with an embodiment of the present invention, a method of fabricating a semiconductor device includes forming a trench from a top surface of a substrate having a device region. The device region is adjacent to the top surface than an opposite bottom surface. The trench surrounds the sidewalls of the device region. The trench is filled with an adhesive. An adhesive layer is formed over the top surface of the substrate. A carrier is attached with the adhesive layer. The substrate is thinned from the bottom surface to expose at least a portion of the adhesive and a back surface of the device region. The adhesive layer is removed and adhesive is etched to expose a sidewall of the device region.07-25-2013
20100029060DICING DIE-BONDING FILM - A dicing die-bonding film having a pressure-sensitive adhesive layer on a base and a die-bonding film on the pressure-sensitive adhesive layer, the pressure-sensitive adhesive layer comprising an acrylic polymer comprising acrylic ester A represented by CH02-04-2010
20090263955GaN single crystal substrate and method of making the same - The method of making a GaN single crystal substrate comprises a mask layer forming step of forming on a GaAs substrate 10-22-2009
20090170290SEMICONDUCTOR MANUFACTURING METHOD OF DIE PICK-UP FROM WAFER - A manufacturing method of a semiconductor device comprising the steps of: affixing a die attach film and a dicing film to a back surface of a semiconductor wafer: thereafter dicing the semiconductor wafer and the die attach film to divide the semiconductor wafer into a plurality of semiconductor chips: thereafter pulling the dicing film from the center toward the outer periphery of the dicing film with a first tensile force to cut the die attach film chip by chip; and thereafter picking up the semiconductor chips together with the die attach film while pulling the dicing film from the center toward the outer periphery of the dicing film with a second tensile force smaller than the first tensile force.07-02-2009
20080286948Fabrication Method of Semiconductor Integrated Circuit Device - A technique capable of stably releasing chips from a dicing tape, includes grinding a back surface of a semiconductor wafer, while adhering a pressure sensitive adhesive tape to a circuit forming surface of the semiconductor wafer formed with an integrated circuit, to achieve a predetermined thickness and forcibly oxidizing the back surface of the semiconductor wafer. Then, the pressure sensitive adhesive tape adhered to the circuit forming surface of the semiconductor wafer is released, and a dicing tape is adhered to the back surface of the semiconductor wafer. Further, the semiconductor wafer is divided by dicing it into individual chips, and then the back surface of the chip is pressed by way of the dicing tape, thereby releasing the chips from the dicing tape.11-20-2008
20080286947Process for Separating Disk-Shaped Substrates with the Use of Adhesive Powers - The present invention relates to a device and a method for dividing up substrates (11-20-2008
20080293221METHOD FOR HOLDING SEMICONDUCTOR WAFER - Provided is a method comprising: 11-27-2008
20080286946Wafer dicing method - A wafer stacked on a mounting layer is safely diced. The mounting layer has holes partially corresponding to chips on the wafer. Thus, chips obtained after dicing the wafer can be safely removed from the mounting tape. An amount of the mounting tape used can be reduced. And a production cost can be lowered as well.11-20-2008
20080213980Process Applied to Semiconductor - A process applied to grinding, dicing, and/or stacking semiconductors is disclosed. One of its features is that after transparent material is stuck on its active surface, a semiconductor is ground from another surface thereof to become thinner, then take advantage of transparency of the transparent material to cut the transparent material and the semiconductor, to obtain at least one smaller semiconductor unit such as die or chip. Another feature is that the transparent material remains sticking to the active surface of the die by an adhesion layer until the die is attached to a carrier or another die, and then the transparent material and the adhesion layer are removed by taking advantage of a function of the adhesion layer: receiving a ray to lose adhesion between it and the active surface. Preferably the ray reaches the adhesion layer via the transparent material stuck on the active surface of the die.09-04-2008
20080280422Ultra Thin Bumped Wafer with Under-Film - A system to support a die includes a substrate. A solder resist is disposed over the substrate. A first solder bump is disposed in the solder resist to provide electrical connectivity through the solder resist to the substrate. A second solder bump is formed over the solder resist to correspond with a peripheral edge or a corner of the die. The second solder bump provides standoff height physical support to the die.11-13-2008
20100144120Method for Producing Chip with Adhesive Applied - A method for producing a chip (06-10-2010
20110269296METHOD FOR SEPARATING SEMICONDUCTOR WAFER INTO CHIPS - A method for separating a semiconductor wafer into chips includes the steps of sandwiching a soluble spacer between a wafer and a substrate to form a laminate, etching the wafer into a plurality of chips attached on the spacer, positioning the laminate in a chamber of an apparatus in a way that the etched wafer faces a stage of the apparatus, and introducing a solvent into the chamber to dissolve the soluble spacer so as to facilitate the chips to be supported on the stage.11-03-2011
20090004829Adhesive Composition, Adhesive Sheet and Production Process for Semiconductor Device - An adhesive sheet which can actualize a high package reliability wherein there is no separation at the adhesive interface and no package cracking, in a package in which a semiconductor chip being reduced in thickness is mounted under severe reflow conditions after exposure to a hot and humid environment. The adhesive sheet includes a base material and, formed thereon, an adhesive layer having an adhesive composition including an acrylic copolymer (A) containing 20 to 95% by weight of a structural unit derived from a benzyl(meth)acrylate, an epoxy thermosetting resin (B), and a thermosetting agent (C).01-01-2009
20100248453SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - A semiconductor device includes a semiconductor element, a transparent member separated from the semiconductor element by a designated length and facing the semiconductor element, a sealing member sealing an edge surface of the transparent member and an edge part of the semiconductor element, and a shock-absorbing member provided between the edge surface of the transparent member and the sealing member and easing a stress which the transparent member receives from the sealing member or the semiconductor element.09-30-2010
20100248452ADHESIVE, ADHESIVE SHEET, MULTI-LAYERED ADHESIVE SHEET, AND PRODUCTION METHOD FOR ELECTRONIC PART - A multi-layered adhesive sheet 09-30-2010
20090117713Reduction of Attraction Forces Between Silicon Wafers - The present invention is related to a method for reducing attraction forces between wafers (05-07-2009
20100015784SEMICONDUCTOR DEVICE MANUFACTURING METHOD - In a semiconductor device manufacturing method in which a wafer formed with devices in a plurality of areas sectioned by a plurality of streets formed in a lattice-like pattern on the front surface is divided into the individual devices along the streets, when the wafer is divided into the individual devices by exposing cut grooves formed along the streets by a dicing before grinding process, a rigid plate is applied to the front surface of the wafer and an adhesive film is attached to the rear surface of the wafer. Thereafter, a separation groove forming step is performed in which a laser beam is directed to the adhesive film along the cut grooves form the dicing tape side applied with the wafer attached with the adhesive film to form separation grooves in the adhesive film along the cut grooves.01-21-2010
20090075459Apparatus and method for picking-up semiconductor dies - A die pick-up apparatus and method using a die stage having an adherence surface, a suction window formed in the adherence surface and larger than a semiconductor die to be picked up, and a cover plate that slides along the adherence surface and opens and closes the suction window. When picking up the semiconductor die, the surface of the cover plate is caused to be closely contacted to a dicing sheet that is attached to the die so that the die is within the boundary of the upper surface of the cover plate that closes the suction window, and then the dicing sheet is sequentially peeled off as, while the die is being suctioned by a collet, the cover plate gradually slides to sequentially open the suction window and allow the dicing sheet to be suctioned into the opened suction window.03-19-2009
20130122689Methods for De-Bonding Carriers - A method includes performing a dicing on a composite wafer including a plurality of dies, wherein the composite wafer is bonded on a carrier when the step of dicing is performed. After the step of dicing, the composite wafer is mounted onto a tape. The carrier is then de-bonded from the composite wafer and the first tape.05-16-2013
20100240196ADHESIVE, ADHESIVE SHEET, MULTI-LAYERED ADHESIVE SHEET, AND PRODUCTION METHOD FOR AN ELECTRONIC PART - A multi-layered adhesive sheet includes a substrate film, an adhesive layer formed by coating an adhesive having a specific composition onto the substrate film, and a die attachment film laminated on the adhesive layer. The multi-layered adhesive sheet employing an adhesive having this specific composition is superior in retention of a die chip during dicing of a silicon wafer, the multi-layered adhesive sheet is less likely to come off a ring frame during the dicing of the silicon wafer, and it allows for the die attachment film and the adhesive layer to be easily peeled apart during a pick-up operation of a die chip.09-23-2010
20100227454MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A manufacturing method of a semiconductor device, includes: forming grooves from a first surface side of a semiconductor wafer; separating plural chip areas into pieces by grinding a second surface of the semiconductor wafer after a protection sheet is attached to the first surface of the semiconductor wafer; attaching a laminated film in which a dicing film and an adhesive film are sequentially laminated on a supporting film composed of a resin film with high modulus of elasticity to the second surface of the semiconductor wafer; and cutting the adhesive film.09-09-2010
20080261383SEMICONDUCTOR WORKPIECE CARRIERS AND METHODS FOR PROCESSING SEMICONDUCTOR WORKPIECES - Semiconductor workpiece carriers and methods for processing semiconductor workpieces are disclosed herein. In one embodiment, a semiconductor workpiece carrier assembly includes (a) a support structure having an opening sized to receive at least a portion of a semiconductor workpiece, and (b) a replaceable carrier positioned at the opening. The replaceable carrier includes a base and an adhesive layer on the base. The base has a surface, and the adhesive layer covers only a section of the surface of the base. The adhesive layer releasably attaches the replaceable carrier to the support structure.10-23-2008
20090075458METHOD OF MANUFACTURING DEVICE HAVING ADHESIVE FILM ON BACK-SIDE SURFACE THEREOF - A method of manufacturing a device, including: an adhesive film attaching step of attaching an adhesive film to a back-side surface of a wafer in which devices are formed respectively in a plurality of regions demarcated by planned dividing lines formed in a grid pattern in a face-side surface of the wafer; a wafer supporting step of adhering the adhesive film side of the wafer with the adhesive film attached thereto to a surface of a dicing tape attached to an annular frame; a wafer cutting step of holding the dicing tape side of the wafer adhered to the surface of the dicing tape onto a chuck table of a cutting apparatus, and cutting the wafer along the planned dividing lines by use of a cutting blade having an annular knife edge which is V-shaped in sectional shape of a peripheral part thereof; and an adhesive film breaking step of breaking said adhesive film along cutting grooves formed in the wafer, by expanding the dicing tape so as to exert tension on the adhesive film, after the wafer cutting step is performed.03-19-2009
20100120230SEMICONDUCTOR DIE SINGULATION METHOD - In one embodiment, semiconductor die are singulated from a semiconductor wafer by etching openings completely through the semiconductor wafer.05-13-2010
20100081258THERMOSETTING DIE-BONDING FILM - A thermosetting die-bonding film having excellent adhesion to an adherent and preferable pickup properties and a dicing die-bonding film having the thermosetting die-bonding film are provided. The thermosetting die-bonding film of the present invention is a thermosetting die-bonding film that is used when manufacturing a semiconductor device and contains 15 to 30% by weight of a thermoplastic resin component and 60 to 70% by weight of a thermosetting resin component as main components, wherein a surface free energy before heat curing is 37 mJ/m04-01-2010
20100311226Die-Sorting Sheet and Method for Transporting Chips Having Adhesive Layer - A die-sorting sheet includes a pressure-sensitive adhesive layer exposed on an outer periphery of the carrier sheet, and a base film exposed on a central area that is inside the outer periphery. A method for transporting a chip having an adhesive layer according to the present invention includes the steps of: providing the above die-sorting sheet that is fixed with a frame through the pressure-sensitive adhesive layer on the outer periphery; temporarily attaching a picked up chip through an adhesive layer thereof onto the base film exposed on the die-sorting sheet; and transporting the die-sorting sheet to a subsequent step while the chip is temporarily attached on the sheet through the adhesive layer.12-09-2010
20110008949ADHESIVE SHEET FOR DICING SEMICONDUCTOR WAFER AND METHOD FOR DICING SEMICONDUCTOR WAFER USING THE SAME - An adhesive sheet for dicing a semiconductor wafer having a laminate comprises; a base film, an intermediate layer and an adhesive layer, the intermediate layer is formed by a thermoplastic resin having a melting point of 50 to 100° C.; and the base film has a higher melting point than the intermediate layer as well as a method for dicing a semiconductor wafer comprises the steps of: adhering the adhesive sheet according to the above to a corrugated surface of a semiconductor wafer, and dicing the semiconductor wafer.01-13-2011
20110008948METHOD FOR TRANSFERRING AN EPITAXIAL LAYER - A method for producing an epitaxial layer. First, a structure is fabricated by: formation of an intermediate layer on a donor substrate; and formation of the epitaxial layer on the intermediate layer by epitaxy; with the melting temperature of the intermediate layer being lower than the melting temperature of the epitaxial layer; and then a detachment step for transferring the epitaxial layer from the donor substrate. The detachment step includes applying at least one thermal treatment performed at a temperature of between the melting temperature of the intermediate layer and the melting temperature of the epitaxial layer.01-13-2011
20120244683MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT - A manufacturing method of a semiconductor element comprises the steps of (a) preparing a growth substrate, (b) forming a semiconductor layer on the growth substrate, (c) dividing the semiconductor layer into a plurality of elements while leaving at least a part of the semiconductor layer between each element to form a sacrificial layer around each element, (d) forming a metal layer on the semiconductor layer, (e) bonding a supporting substrate to the semiconductor layer via the metal layer, and (f) removing the growth substrate from the semiconductor layer by irradiating a laser whose area of irradiation covers each element within an outline of the sacrificial layer of each element.09-27-2012
20120244682WAFER DIVIDING METHOD - In a wafer dividing method, a wafer is held by a chuck table of a laser beam processing apparatus. A modified layer is formed by radiating a laser beam having a wavelength that transmits the laser beam through the wafer, while adjusting the beam convergence point to a position inside of the wafer, so as to form a pair of modified layers the interval of which is greater than the width of a cutting edge of a cutting blade and smaller than the width of planned dividing lines, on the back side of the wafer at both sides of each of the planned dividing lines. The wafer is adhered to a dicing tape and divided into individual devices by cutting along the dividing lines.09-27-2012
20110124181WORKPIECE CUTTING METHOD - A cutting method for cutting a workpiece by using a cutting blade. The cutting method includes the steps of attaching an adhesive sheet to one surface of the workpiece, holding the workpiece through the adhesive sheet on holding means, and feeding the cutting blade into the workpiece until reaching the adhesive sheet as supplying a cutting fluid having a temperature of 10° C. or less, thereby cutting the workpiece.05-26-2011
20090311849METHODS OF SEPARATING INTEGRATED CIRCUIT CHIPS FABRICATED ON A WAFER - Improved methods of separating integrated circuit chips fabricated on a single wafer are provided. In an embodiment, a method of separating integrated circuit chips fabricated on a wafer comprises: attaching a support to a back surface of the wafer; dicing the wafer to form individual integrated circuit chips attached to the support; attaching a carrier comprising a releasable adhesive material to a front surface of the wafer opposite from the back surface; separating the support from the back surface of the wafer; subjecting the carrier to an effective amount of heat, radiation, or both to reduce the adhesiveness of the adhesive material to allow for removal of at least one of the integrated circuit chips from the carrier; and picking up and moving at least one of the integrated circuit chips using a tool configured to handle the integrated circuit chips.12-17-2009
20100055878Fabrication Method of Semiconductor Device - A technique with which die bonding can be carried out without forming a void in a bond area is provided. A vacuum supply line that connects to a vacuum chuck hole formed in the bottom face of a vacuuming collet and supplies the vacuuming collet with reduced pressure for vacuum chucking a chip is constructed of two systems. That is, the vacuum supply line is so structured that a first pipe and a second pipe connect to the vacuuming collet. The first pipe supplies the vacuuming collet with a vacuum that provides suction force when a chip is unstuck from a dicing tape and transported to a mounting position on a wiring substrate. The second pipe supplies the vacuuming collet with a vacuum that provides suction force when a chip is mounted over a wiring substrate. The intensity of the vacuum (suction force) supplied to the vacuuming collet is controlled by opening or closing valves respectively installed in the pipes.03-04-2010
20100129985DICING DIE-BONDING FILM AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE - The present invention provides a dicing die-bonding film including: a dicing film having a pressure-sensitive adhesive layer provided on a base material; and a die-bonding film provided on the pressure-sensitive adhesive layer, in which the pressure-sensitive adhesive layer of the dicing film is an active energy ray-curable pressure-sensitive adhesive layer which contains a gas-generating agent in a ratio of 10 to 200 parts by weight based on 100 parts by weight of a base polymer which is a specific acrylic polymer A, and the die-bonding film is formed of a die-adhering layer.05-27-2010
20080242057SEMICONDUCTOR DEVICE WITH A THINNED SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING THE THINNED SEMICONDUCTOR CHIP - A semiconductor device with a thinned semiconductor chip and a method for producing the latter is disclosed. In one embodiment, the thinned semiconductor chip has a top side with contact areas and a rear side with a rear side electrode. In this case, the rear side electrode is cohesively connected to a chip pad of a circuit carrier via an electrically conductive layer. In another embodiment, the thinned semiconductor chips of this semiconductor device according to the invention have low-microdefect edge side regions with semiconductor element structures and edge sides patterned by etching technology.10-02-2008
20090029527PROCESSES FOR FORMING BACKPLANES FOR ELECTRO-OPTIC DISPLAYS - A non-linear element is formed on a flexible substrate by securing the substrate to a rigid carrier, forming the non-linear element, and then separating the flexible substrate from the carrier. The process allows flexible substrates to be processed in a conventional fab intended to process rigid substrates. In a second method, a transistor is formed on a insulating substrate by forming gate electrodes, depositing a dielectric layer, a semiconductor layer and a conductive layer, patterning the conductive layer to form source, drain and pixel electrodes, covering the channel region of the resultant transistor with an etch-resistant material and etching using the etch-resistant material and the conductive layer as a mask, the etching extending substantially through the semiconductor layer between adjacent transistors. The invention also provides a process for forming a diode on a substrate by depositing on the substrate a first conductive layer, and a second patterned conductive layer and a patterned dielectric layer over parts of the first conductive layer, and etching the first conductive layer using the second conductive layer and dielectric layer as an etch mask. Finally, the invention provides a process for driving an impulse-sensitive electro-optic display.01-29-2009
20110256690INTEGRATED CIRCUIT WAFER DICING METHOD - An integrated circuit wafer dicing method is provided. The method includes forming a plurality of integrated circuits on a wafer substrate, forming a patterned protective layer on the integrated circuits, and etching through the wafer substrate to form a plurality of integrated circuit dies by using the patterned protective layer as a mask. The patterned protective layer is preferably a patterned photoresist layer. The step of forming the patterned protective layer includes covering the wafer substrate with a photoresist layer, exposing the photoresist layer by using a photomask, and developing the exposed photoresist layer to form the patterned protective layer. The etching process can be dry etching or wet etching.10-20-2011
20110136324SEMICONDUCTOR DICE TRANSFER-ENABLING APPARATUS AND METHOD FOR MANUFACTURING TRANSFER-ENABLING APPARATUS - A transfer-enabling apparatus, produced by a method of manufacturing, includes a substrate patterned with islands separated by trenches and an epitaxial layer, grown at least on the islands, providing semiconductor dice in such a configuration partially released from said substrate and suspended over the substrate, and interconnected, by anchors of epitaxial or other material that are attached to the substrate. The anchors are of width less than or equal to than the semiconductor dice and define fracture zones at connections of the anchors with the semiconductor dice.06-09-2011
20110136323SEMICONDUCTOR DEVICE MANUFACTURING EQUIPMENT AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - Semiconductor device manufacturing equipment in which in the process of dividing a substrate into individual semiconductor devices using a dicing blade, the possibility of an odd piece flying off a supporting member is prevented. A supporting member supports a substrate for semiconductor devices on one surface thereof. A dicing blade dices the substrate supported by the supporting member along dicing lines provided on the substrate to divide the substrate into a plurality of semiconductor devices. In a plan view, the edge of the supporting member's surface supporting the substrate overlaps a semiconductor device located at an outermost position of the substrate and lies inside a dicing line at an outermost position of the substrate.06-09-2011
20100120229METHOD FOR MANUFACTURING SEMICONDUCTOR CHIP, ADHESIVE FILM FOR SEMICONDUCTOR, AND COMPOSITE SHEET USING THE FILM - There is provided a method that allows semiconductor chips to be obtained from a semiconductor wafer at high yield, while sufficiently inhibiting generation of chip cracks and burrs. The method for manufacturing a semiconductor chip comprises a step of preparing a laminated body having a semiconductor wafer, an adhesive film for a semiconductor and dicing tape laminated in that order, the semiconductor wafer being partitioned into multiple semiconductor chips and notches being formed from the semiconductor wafer side so that at least a portion of the adhesive film for a semiconductor remains uncut in its thickness direction, and a step of stretching out the dicing tape in a direction so that the multiple semiconductor chips are separated apart, to separate the adhesive film for a semiconductor along the notches. The adhesive film for a semiconductor has a tensile breaking elongation of less than 5% and the tensile breaking elongation of less than 110% of the elongation at maximum load.05-13-2010
20100261337METHOD FOR MANUFACTURING DIES FORMED WITH A DIELECTRIC LAYER - A method of manufacturing dies formed with a dielectric layer is revealed. A liquid dielectric layer is formed on the dicing tape. The liquid dielectric layer is heated to be sticky. Then, a wafer is attached to the dielectric layer on the dicing tape. The wafer is diced into a plurality of dies on the dicing tape. The dies with attached portions of the dielectric layer are picked up to be peeled and separated from the dicing tape. The implementation of the dicing tape can be expanded to resolve various issues such as wafer contaminations, wafer warpage due to multiple heating and mismatching of thermal expansion coefficients, and wafer singulating problems due to alignment difficulties. The wafer handling steps can further be reduced to increase processing yield and to enhance easy and better processing.10-14-2010
20120309170EXPANDABLE FILM, DICING FILM, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE - To provide an olefinic expandable substrate and a dicing film that exhibits less contamination characteristics, high expandability without necking, which cannot be achieved by conventional olefinic expandable substrates. In order to achieve the object, an expandable film comprises a 1-butene-α-olefin copolymer (A) having a tensile modulus at 23° C. of 100 to 500 MPa and a propylenic elastomer composition (B) comprising a propylene-α-olefin copolymer (b1) and having a tensile modulus at 23° C. of 10 to 50 MPa, wherein the amount of the component (B) is 30 to 70 weight parts relative to 100 weight parts in total of components (A) and (B).12-06-2012
20110189835FILM FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - There is provided a new film for manufacturing a semiconductor device that is superior to prevent contamination of a semiconductor chip having an excellent balance of holding power during dicing a semiconductor wafer even where the semiconductor wafer is thin, peeling property when peeling the semiconductor chip that is obtained by dicing together with its adhesive layer, and low contamination property in which there is no attachment of cutting debris to the semiconductor chip. A film for manufacturing a semiconductor device that is used when manufacturing a semiconductor device has a base layer, a first pressure-sensitive adhesive layer that is provided on the base layer, a radiation curing-type second pressure-sensitive adhesive layer that is provided on the first pressure-sensitive adhesive layer and cured by radiation irradiation in advance, and an adhesive layer that is provided on the second pressure-sensitive adhesive layer.08-04-2011
20100029061DICING DIE-BONDING FILM - A dicing die-bonding film comprising a dicing film having a pressure-sensitive adhesive layer on a base and a die-bonding film on the pressure-sensitive adhesive layer, the pressure-sensitive adhesive layer comprising an acrylic pressure-sensitive adhesive comprising an acrylic polymer which comprises an acrylic ester, a hydroxyl group-containing monomer where a ratio is in a range of 10-40 mol % to 100 mol % of the acrylic ester, an isocyanate compound having a radical reactive carbon-carbon double bond where a ratio is in a range of 70-90 mol % to 100 mol % of the hydroxyl group-containing monomer, and a compound having two or more radical reactive carbon-carbon double bonds where a ratio is in a range of 10-60 parts by weight to 100 parts by weight of the acrylic polymer, and the die-bonding film is formed from an epoxy resin and is laminated on the pressure-sensitive adhesive layer.02-04-2010
20100029059DICING DIE-BONDING FILM - The present invention is a dicing die-bonding film having a dicing film having a pressure-sensitive adhesive layer on an ultraviolet-ray transmitting base and a die-bonding film provided on the pressure-sensitive adhesive layer, wherein the pressure-sensitive adhesive layer is formed by laminating the die-bonding film onto a pressure-sensitive adhesive layer precursor formed from an acrylic polymer comprising an acrylic ester as a main monomer, a hydroxyl group-containing monomer at a ratio in the range of 10 to 40 mol % with respect to 100 mol % of the acrylic ester, and an isocyanate compound having a radical reactive carbon-carbon double bond within a molecular at a ratio in the range of 70 to 90 mol % with respect to 100 mol % of the hydroxyl group-containing monomer, and then curing by irradiating with an ultraviolet ray from the base side, and the die-bonding film is formed from an epoxy resin.02-04-2010
20120302041Energy Ray-Curable Polymer, an Energy Ray-Curable Adhesive Composition, an Adhesive Sheet and a Processing Method of a Semiconductor Wafer - In a pressure-sensitive adhesive composition or a pressure-sensitive adhesive sheet containing an energy ray-curable polymer, problems associated with the volatilization of a low molecular weight compound contained in the composition are overcome. An energy ray-curable polymer characterized by comprising a radical generating group, which is capable of initiating a polymerization reaction upon excitation with an energy ray, and an energy ray-polymerizable group bonded together in the main or side chain.11-29-2012
20100233868Adhesive Sheet and a Processing Method of Semiconductor Wafer, and a Manufacturing Method of Semiconductive Chip - The objective of the present invention is to solve the various problems involving the evaporation or the moving of the low-molecular weight included in the intermediate layer, in the adhesive sheet having a multilayered adhesive layer. The above mentioned problems are solved by an adhesive sheet comprising a substrate, an intermediate layer formed thereon, and an adhesive layer formed on said intermediate layer, wherein, said intermediate layer includes an energy ray-curable polymer in which an energy ray-polymerizable group and a radical-generating group initiating a polymerization under excitation by an energy ray are bound at a main chain or side chain.09-16-2010
20100311227METHOD FOR PRODUCING SEMICONDUCTOR CHIP WITH ADHESIVE FILM, ADHESIVE FILM FOR SEMICONDUCTOR USED IN THE METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE - The method for producing a semiconductor chip with an adhesive film of the present invention comprises steps of preparing a laminate in which at least a divided semiconductor wafer comprising a plurality of semiconductor chips, obtained by forming a cut which separates the semiconductor wafer into a plurality of semiconductor chips on one side of the semiconductor wafer in a thickness less than that of the semiconductor wafer and by grinding the other side of the semiconductor wafer on which no cut is formed to reach the cut, an adhesive film for a semiconductor and a dicing tape are laminated, the adhesive film for a semiconductor having a thickness in the range of 1 to 15 μm and a tensile elongation at break of less than 5%, and the tensile elongation at break being less than 110% of the elongation at a maximum load; and dividing the adhesive film for a semiconductor by picking up the plurality of semiconductor chips in a laminating direction of the laminate, thereby preparing a semiconductor chip with an adhesive film.12-09-2010
20100184272SEMICONDUCTOR DIE SINGULATION METHOD - In one embodiment, semiconductor die are singulated from a semiconductor wafer by etching openings completely through the semiconductor wafer.07-22-2010
20120058625FILM FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE - The present invention provides a film for a semiconductor device that is capable of suppressing the generation of a transfer mark on an adhesive film when a film for a semiconductor device, in which an adhesive film with a dicing sheet obtained by laminating an adhesive film onto a dicing film is laminated onto a cover film leaving a prescribed spacing, is wound up into a roll. It is a film for a semiconductor device in which an adhesive film with a dicing sheet obtained by laminating an adhesive film onto a dicing film is laminated onto a cover film leaving a prescribed spacing, wherein a ratio Ea/Eb of the tensile storage modulus Ea of the adhesive film at 23° C. to the tensile storage modulus Eb of the cover film at 23° C. is in a range of 0.001 to 50.03-08-2012
20120070960DICING DIE BOND FILM, METHOD OF MANUFACTURING DICING DIE BOND FILM, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The present invention aims to provide a dicing die bond film that is capable of suppressing peeling of the dicing die bond film from a dicing ring. The present invention provides a dicing die bond film in which the pressure-sensitive adhesive layer contains a polymer formed by performing an addition reaction on a specific acrylic polymer with a specific isocyanate compound, and a specific crosslinking agent, and the specific peeling adhesive power of a portion of the pressure-sensitive adhesive layer where the dicing ring is pasted is 1.0 N/20 mm tape width or more and 10.0 N/20 mm tape width or less, the tensile storage modulus at 23° C. of the portion where the dicing ring is pasted is 0.05 MPa or more and less than 0.4 MPa, and the die bond film is pasted to the pressure-sensitive adhesive layer after irradiation with an ultraviolet ray.03-22-2012
20110065261DICING METHOD - With the invented dicing method, by increasing the cohesive strength while decreasing the adhesive strength of an ultraviolet-curing adhesive in advance, mixing of the ultraviolet-curing adhesive layer of an adhesive sheet with a die attach film on a dicing line can be decreased and pickup failures can be reduced, when picking up chips having a die attach film after dicing. The dicing method for a semiconductor wafer with a die-attach film comprises a first gluing step in which a die attach film is affixed to an adhesive sheet having an ultraviolet-curing adhesive laminated on a base material film, a second gluing step in which a semiconductor wafer is affixed to the opposite side of the die attach film affixed to the adhesive sheet, an ultraviolet irradiation step in which the ultraviolet-curing adhesive is irradiated with ultraviolet light, and a dicing step in which the semiconductor wafer and the die attach film affixed to the adhesive sheet are diced.03-17-2011
20110065260PHOTOSENSITIVE ADHESIVE COMPOSITION, AND OBTAINED USING THE SAME, ADHESIVE FILM, ADHESIVE SHEET, SEMICONDUCTOR WAFER WITH ADHESIVE LAYER, SEMICONDUCTOR DEVICE AND ELECTRONIC PART - A photosensitive adhesive composition comprising: (A) a polyimide having a carboxyl group as a side chain, whereof the acid value is 80 to 180 mg/KOH; (B) a photo-polymerizable compound; and (C) a photopolymerization initiator.03-17-2011
20110104873DICING/DIE BONDING FILM - Provided is a dicing die-bonding film which is excellent in balance between retention of a semiconductor wafer upon dicing and releasability upon picking up. Disclosed is a dicing die-bonding film comprising a dicing film having a pressure-sensitive adhesive layer on a substrate material, and a die-bonding film formed on the pressure-sensitive adhesive layer, wherein the pressure-sensitive adhesive layer contains a polymer including an acrylic acid ester as a main monomer, 10 to 40 mol % of a hydroxyl group-containing monomer based on the acrylic acid ester, and 70 to 90 mol % of an isocyanate compound having a radical reactive carbon-carbon double bond based on the hydroxyl group-containing monomer, and is also cured by irradiation with ultraviolet rays under predetermined conditions after film formation on the substrate material, and wherein the die-bonding film contains an epoxy resin, and is also bonded on the pressure-sensitive adhesive layer after irradiation with ultraviolet rays.05-05-2011
20110104874Energy Ray-Curable Polymer, an Energy Ray-Curable Adhesive Composition, an Adhesive Sheet and a Processing Method of a Semiconductor Wafer - In a pressure-sensitive adhesive composition or a pressure-sensitive adhesive sheet containing an energy ray-curable polymer, problems associated with the volatilization of a low molecular weight compound contained in the composition are overcome. An energy ray-curable polymer characterized by comprising a radical generating group, which is capable of initiating a polymerization reaction upon excitation with an energy ray, and an energy ray-polymerizable group bonded together in the main or side chain.05-05-2011
20100093155DICING/DIE-BONDING FILM, METHOD OF FIXING CHIPPED WORK AND SEMICONDUCTOR DEVICE - A dicing/die-bonding film including a pressure-sensitive adhesive layer (04-15-2010
20120077334METHOD FOR FABRICATING SEMICONDUCTOR DEVICES - A method for fabricating semiconductor devices includes: (a) forming a layered structure that includes a temporary substrate, a plurality of spaced apart sacrificial film regions on the temporary substrate, and a plurality of valley-and-peak areas among the sacrificial film regions; (b) growing laterally and epitaxially an epitaxial film layer over the sacrificial film regions and the valley-and-peak areas, wherein gaps are formed among the epitaxial film layer and the valley-and-peak areas; (c) forming a conductive layer to contact the epitaxial film layer; (d) forming a plurality of grooves to divide the epitaxial film layer and the conductive layer into a plurality of epitaxial structures on the temporary substrate; and (e) removing the temporary substrate and the sacrificial film regions from the epitaxial structures by etching the sacrificial film regions through the gaps and the grooves.03-29-2012
20100048001PLASMA DICING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR CHIPS - A plasma dicing apparatus in which a semiconductor wafer with a protective sheet stuck thereonto covering the entire circuit-forming surface and with an etching-resistant mask member stuck on the back surface opposite to the circuit-forming surface is mounted on a mounting stage; plasma etching is performed using the mask member as a mask; and the semiconductor wafer is diced into plural semiconductor chips. The plasma dicing apparatus includes a ring-shaped frame member retaining the outer circumference of the mask member extending off the outer circumference of the semiconductor wafer. The mounting stage is composed of a wafer supporting part supporting a semiconductor wafer and a frame member supporting part supporting the frame member. This facilitates carrying a semiconductor wafer into and out of the vacuum chamber.02-25-2010
20090061599SEMICONDUCTOR WAFER PROCESSING METHOD - A semiconductor wafer processing method for planarizing an additional layer formed on the front side of a semiconductor wafer. First, the wafer is held on a chuck table included in a cutting device in the condition where the additional layer is exposed, and a table base supporting the chuck table is moved toward a working position. In concert with the movement of the table base, the exposed surface of the additional layer is cut by a bit of a cutting tool rotationally driven by a spindle motor. Thereafter, the exposed surface of the additional layer is polished by a polishing device to planarize the exposed surface of the additional layer.03-05-2009
20100233867METHOD OF PRODUCING SEGMENTED CHIPS - To provide a method of producing segmented chips preventing the chips from being damaged by the chip jumping or by the contact of the neighboring chips while the back surfaces thereof are being ground. A method of producing segmented chips by grinding the back surface of a material to be ground which includes a plurality of chips segmented into individual chips by at least partly cutting the chips in the direction of thickness thereof along the boundaries of the chips, wherein the gaps among the individual chips are filled with a liquid adhesive, the material to be ground is laminated on a rigid support material in a manner that the back surface thereof is exposed, and the adhesive is cured or solidified to form a laminate of the material to be ground having the plurality of chips, the adhesive solid material and the rigid support material arranged in this order; the laminate is ground from the back surface side of the material to be ground, the rigid support member is removed from the laminate, a flexible adhesive sheet is adhered onto the adhesive solid material, and the individual chips are picked up and recovered.09-16-2010
20120329249METHODS OF PROCESSING SUBSTRATES - Methods of manufacturing a plurality of semiconductor chips are provided. The method may include providing a middle layer between a substrate and a carrier to combine the carrier with the substrate, thinning the substrate; after thinning the substrate, separating the carrier from the substrate; and after the carrier is separated from the substrate, cutting the substrate to form the plurality of semiconductor chips, wherein the middle layer is adhered to the carrier with a first bonding force, and the middle layer is adhered to the substrate with a second bonding force, and wherein the second bonding force is greater than the first bonding force.12-27-2012
20120100697FILM FOR SEMICONDUCTOR AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A film for semiconductor includes a support film, a second adhesive layer, a first adhesive layer and a bonding layer which are laminated together in this order. This film for semiconductor is configured so that it supports a semiconductor wafer laminated on the bonding layer thereof when the semiconductor wafer is diced and the bonding layer is selectively peeled off from the first adhesive layer when the diced semiconductor wafer (semiconductor element) is picked up. This film for semiconductor is characterized in that when the semiconductor wafer is laminated thereon and diced, and then adhesive strength of the obtained semiconductor element is measured, a ratio of “a (N/cm)” which is adhesive strength of an edge portion of the semiconductor element to “b (N/cm)” which is adhesive strength of a portion of the semiconductor element other than the edge portion thereof (that is, a/b) is in the range of 1 to 4. By optimizing the a/b, it is possible to reliably suppress defects such as breakage and crack which would be generated in the semiconductor element due to local impartation of a large load thereto when being picked up.04-26-2012
20100129986DICING DIE-BONDING FILM AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE - The present invention relates to a dicing die-bonding film including: a dicing film having a pressure-sensitive adhesive layer provided on a base material; and a die-bonding film provided on the pressure-sensitive adhesive layer, in which the pressure-sensitive adhesive layer of the dicing film has a laminated structure of a heat-expandable pressure-sensitive adhesive layer containing a foaming agent and an active energy ray-curable antifouling pressure-sensitive adhesive layer, which are laminated on the base material in this order, and in which the die-bonding film is constituted by a resin composition containing an epoxy resin. Moreover, the present invention provides a process for producing a semiconductor device which includes using the above-described dicing die-bonding film.05-27-2010
20100129989DICING DIE-BONDING FILM AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE - The present invention relates to a dicing die-bonding film comprising: a dicing film having a pressure-sensitive adhesive layer provided on a base material; and a die-bonding film provided on the pressure-sensitive adhesive layer, in which the pressure-sensitive adhesive layer of the dicing film is an active energy ray-curable heat-expandable pressure-sensitive adhesive layer containing a foaming agent, and in which the die-bonding film is constituted by a resin composition containing an epoxy resin. Moreover, the present invention provides a process for producing a semiconductor device which includes using the above-described dicing die-bonding film.05-27-2010
20100129988DICING DIE-BONDING FILM AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE - The present invention provides a dicing die-bonding film including: a dicing film having a pressure-sensitive adhesive layer provided on a base material; and a die-bonding film provided on the pressure-sensitive adhesive layer, in which the pressure-sensitive adhesive layer of the dicing film is a pressure-sensitive adhesive layer which contains a gas-generating agent in a ratio of 10 to 200 parts by weight based on 100 parts by weight of a base polymer, the base polymer is an acrylic polymer A composed of a monomer composition containing 50% by weight or more of an acrylic acid ester represented by CH05-27-2010
20100129987DICING DIE-BONDING FILM AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE - The present invention relates to a dicing die-bonding film including: a dicing film having a pressure-sensitive adhesive layer provided on a base material; and a die-bonding film provided on the pressure-sensitive adhesive layer. The pressure-sensitive adhesive layer of the dicing film is a heat-expandable pressure-sensitive adhesive layer formed of a heat-expandable pressure-sensitive adhesive containing an acrylic polymer A and a foaming agent. The acrylic polymer A is an acrylic polymer composed of a monomer composition containing 50% by weight or more of an acrylic acid ester represented by CH05-27-2010
20120149174METHOD FOR THINNING AND DICING ELECTRONIC CIRCUIT WAFERS - A method for thinning and dicing a wafer of electronic circuits, wherein: a thinning step is carried out while the wafer is supported by a first film bonded at the periphery of a support frame; and a dicing step is carried out while the thinned wafer is supported by a second film bonded at the periphery of the same frame from the other surface of the wafer, the first film being unstuck only once the second one is in place.06-14-2012
20130017671METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes the steps of: preparing a substrate having a region that at least includes one main surface thereof and that is made of single-crystal silicon carbide; forming an active layer on the one main surface; grinding a region including the other main surface of the substrate opposite to the one main surface; removing a damaged layer formed in the step of grinding the region including the other main surface; and forming a backside electrode in contact with the main surface exposed by the removal of the damaged layer. The one main surface has an off angle of not less than 50° and not more than 65° relative to a {0001} plane.01-17-2013
20130171804METHOD FOR MANUFACTURING ELECTRONIC COMPONENT - Provided is a method for manufacturing electronic component improved in chip-holding efficiency, pickup efficiency and contamination resistance in a well-balanced manner, the method comprising a semi-cured adhesive layer-forming step of forming a semi-cured adhesive layer on the rear face of a wafer, a fixing step of fixing the semi-cured adhesive layer of the wafer on a ring frame with a cohesive sheet, a dicing step of dicing the wafer into semiconductor chips, a UV-irradiating step of irradiating ultraviolet ray, and a pick-up step of picking up the chips and semi-cured adhesive layers from the cohesive layer, wherein the cohesive sheet has a cohesive layer of a cohesive agent having a particular composition formed on one face of its base film.07-04-2013
20080242058Adhesive Composition, Adhesive Sheet and Production Process for Semiconductor Device - The adhesive composition according to the present invention is characterized by including an acrylic polymer, an epoxy resin having an epoxy equivalent of 180 g/eq or less and a thermosetting agent.10-02-2008
20080220591METHOD OF MANUFACTURING DEVICE - A method of manufacturing a device, including the steps of forming dividing grooves with a predetermined depth along planned dividing lines of a wafer, then grinding the back-side surface of the wafer to expose the dividing grooves on the back side, dividing the wafer into individual devices, attaching a UV-curable adhesive film to the backside surface of the wafer divided into the individual devices, adhering the adhesive film side of the wafer to a dicing tape attached to an annular frame, radiating UV rays from the face side of the wafer to cure those regions of the adhesive film which correspond to the dividing grooves, radiating a laser beam along the dividing grooves to divide the cured adhesive film on a device basis, and releasing the devices from the dicing tape, thereby picking up the devices.09-11-2008
20130095639FILM FOR BACK SURFACE OF FLIP-CHIP SEMICONDUCTOR, DICING-TAPE-INTEGRATED FILM FOR BACK SURFACE OF SEMICONDUCTOR, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND FLIP-CHIP SEMICONDUCTOR DEVICE - The present invention relates to a film for back surface of flip-chip semiconductor, which is to be formed on a back surface of a semiconductor element flip-chip connected onto an adherend, wherein an amount of shrinkage of the film for back surface of flip-chip semiconductor due to thermal curing is 2% by volume or more and not more than 30% by volume relative to a total volume of the film for back surface of flip-chip semiconductor before the thermal curing. According to the film for back surface of flip-chip semiconductor according to the present invention, since it is formed on the back surface of a semiconductor element having been flip-chip connected onto an adherend, it fulfills a function to protect the semiconductor element. In addition, in the film for back surface of flip-chip semiconductor according to the present invention, since an amount of shrinkage due to thermal curing is 2% by volume or more relative to a total volume of the film for back surface of flip-chip semiconductor before the thermal curing, a warp of a semiconductor element to be generated at the time of flip-chip connecting the semiconductor element onto an adherend can be effectively suppressed or prevented.04-18-2013
20130115757METHOD FOR SEPARATING A PLURALITY OF DIES AND A PROCESSING DEVICE FOR SEPARATING A PLURALITY OF DIES - A method for separating a plurality of dies is provided, the method including: defining one or more portions to be removed from a carrier including a plurality of dies by chemically changing the properties of the one or more portions to be removed located between the dies; performing a front-end-of-line FEOL process on at least one die to form at least one semiconductor device; and selectively removing the one or more portions of the carrier whose properties were chemically changed for separating the dies along the removed one or more portions.05-09-2013
20130203241METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes the steps of preparing a semiconductor wafer having a thick portion in an outer circumferential end portion and a thin portion in a central portion, attaching a support material to one surface of the semiconductor wafer, dividing the semiconductor wafer into the thick portion and the thin portion, and cutting the thin portion, after the division, while supporting the thin portion by the support material.08-08-2013
20110275194METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing semiconductor device includes the following steps. First, a carrier substrate and a plurality of pieced segments of wafer are provided. Each of the pieced segments of wafer has an active surface and a back surface on opposite sides thereof. Further, there is at least a bonding pad disposed on the active surface. Next, an adhering layer is formed between the carrier substrate and the active surfaces of the pieced segments of wafer, so as to make the pieced segments of wafer adhere to the carrier substrate. Next, a through silicon via is formed in each of the pieced segments of wafer to electrically connect to the bonding pad correspondingly. Then, the pieced segments of wafer are separated from the carrier substrate.11-10-2011
20100317173Dicing Tape and Process for Manufacturing a Semiconductor Device - A process for manufacturing a semiconductor device through an inlined operation includes the step of attaching a dicing tape to the ground surface immediately after the completion of the grinding of the reverse side. The dicing tape includes a base material and, undetachably laminated thereon, an adhesive layer that includes an adhesive component and an epoxy group-containing compound being free but that does not contain any hardener for epoxy resins.12-16-2010
20130157440Composite wafer for fabrication of semiconductor devices - A composite wafer includes a first substrate having a first vertical thickness and a top surface, the top surface being prepared in a state for subsequent semiconductor material epitaxial deposition. A carrier substrate is disposed beneath the first substrate. The carrier substrate has a second vertical thickness greater than the first vertical thickness. An interlayer bonds the first substrate to the carrier substrate.06-20-2013
20130203240METHOD FOR MAKING A REDISTRIBUTED ELECTRONIC DEVICE USING A TRANSFERRABLE REDISTRIBUTION LAYER - A method of making an electronic device with a redistribution layer includes providing an electronic device having a first pattern of contact areas, and forming a redistribution layer on a temporary substrate. The temporary substrate has a second pattern of contact areas matching the first pattern of contact areas, and a third pattern of contact areas different than the second pattern of contact areas. The second pattern of contact areas is coupled to the third pattern of contact areas through a plurality of stacked conductive and insulating layers. The first pattern of contact areas is coupled to the second pattern of contact areas on the transferrable redistribution layer. The temporary substrate is then removed to thereby form a redistributed electronic device.08-08-2013

Patent applications in class With attachment to temporary support or carrier