Class / Patent application number | Description | Number of patent applications / Date published |
438134000 | Bidirectional rectifier with control electrode (e.g., triac, diac, etc.) | 7 |
20090162978 | Method of Forming a SiGe DIAC ESD Protection Structure - A diode for alternating current (DIAC) electrostatic discharge (ESD) protection circuit is formed in a silicon germanium (SiGe) hetrojunction bipolar transistor (HBT) process that utilizes a very thin collector region. ESD protection for a pair of to-be-protected pads is provided by utilizing the base structures and the emitter structures of the SiGe transistors. | 06-25-2009 |
20120083075 | METHOD OF FORMING A BI-DIRECTIONAL TRANSISTOR WITH BY-PASS PATH - In one embodiment, a transistor is formed to have a first current flow path to selectively conduct current in both directions through the transistor and to have a second current flow path to selectively conduct current in one direction. | 04-05-2012 |
20140057398 | Memory Cells, Memory Arrays, Methods Of Forming Memory Cells, And Methods Of Forming A Shared Doped Semiconductor Region Of A Vertically Oriented Thyristor And A Vertically Oriented Access Transistor - A memory cell includes a thyristor having a plurality of alternately doped, vertically superposed semiconductor regions; a vertically oriented access transistor having an access gate; and a control gate operatively laterally adjacent one of the alternately doped, vertically superposed semiconductor regions. The control gate is spaced laterally of the access gate. Other embodiments are disclosed, including methods of forming memory cells and methods of forming a shared doped semiconductor region of a vertically oriented thyristor and a vertically oriented access transistor. | 02-27-2014 |
20140065773 | ELECTROSTATIC DISCHARGE (ESD) SILICON CONTROLLED RECTIFIER (SCR) STRUCTURE - A structure includes first and second silicon controlled rectifiers (SCRs) formed in a substrate. The first and the second SCRs each include at least one component commonly shared between the first and the second SCRs. | 03-06-2014 |
20140342510 | BULK FINFET ESD DEVICES - Aspects of the disclosure provide a dual electrostatic discharge (ESD) protection device in fin field effect transistor (FinFET) process technology and methods of forming the same. In one embodiment, the dual ESD protection device includes: a bulk silicon substrate; a shallow trench isolation (STI) region formed over the bulk silicon substrate; a first ESD device positioned above the STI region; and a second ESD device positioned below the STI region, wherein the first ESD device conducts current above the STI region and the second ESD device conducts current below the STI region. | 11-20-2014 |
20150050784 | BI-DIRECTIONAL SILICON CONTROLLED RECTIFIER STRUCTURE - Fabrication methods for bi-directional silicon controlled rectifier device structures. A well of a first conductivity type is formed in a device region, which may be defined from a device layer of a semiconductor-on-insulator substrate. An anode of a first silicon controlled rectifier is formed in the first well. A cathode of a second silicon controlled rectifier is formed in the first well. The anode of the first silicon controlled rectifier has the first conductivity type. The cathode of the second silicon controlled rectifier has a second conductivity type opposite to the first conductivity type. | 02-19-2015 |
20160148940 | Cross-Coupled Thyristor SRAM Semiconductor Structures and Methods of Fabrication - A memory cell based upon thyristors for an SRAM integrated circuit is described together with a process for fabricating it. The memory cell can be implemented in different combinations of MOS and bipolar select transistors, or without select transistors, with thyristors in a semiconductor substrate with shallow trench isolation. Standard CMOS process technology can be used to manufacture the SRAM. Special circuitry provides lowered power consumption during standby. | 05-26-2016 |