Inventors list

Assignees list

Classification tree browser

Top 100 Inventors

Top 100 Assignees


HAVING ORGANIC SEMICONDUCTIVE COMPONENT

Subclass of:

438 - Semiconductor device manufacturing: process

Patent class list (only not empty are listed)

Deeper subclasses:

Entries
DocumentTitleDate
20110177653THIAZOLE-BASED SEMICONDUCTOR COMPOUND AND ORGANIC THIN FILM TRANSISTOR USING THE SAME - Provided are an organic semiconductor compound using thiazole, and an organic thin film transistor having an organic semiconductor layer formed of the organic semiconductor compound using thiazole. The novel organic semiconductor compound including thiazole has liquid crystallinity and excellent thermal stability, and thus is provided to form an organic semiconductor layer in the organic thin film transistor. To this end, a silicon oxide layer is formed on a silicon substrate, and an organic semiconductor layer including thiazole is formed on the silicon oxide layer. In addition, source and drain electrodes are formed on both edge portions of the organic semiconductor layer. The organic thin film transistor using the organic semiconductor layer has an improved on/off ratio and excellent thermal stability. Also, a solution process can be applied in its manufacture.07-21-2011
20110183462METHOD OF MAKING N-TYPE SEMICONDUCTOR DEVICES - An organic semiconducting composition consists essentially of an N,N-dicycloalkyl-substituted naphthalene diimide and a polymer additive comprising an insulating or semiconducting polymer having a permittivity at 1000 Hz of at least 1.5 and up to and including 5. This composition can be used to provide a semiconducting layer in a thin-film transistor that can be incorporated into a variety of electronic devices.07-28-2011
20120184065METHOD FOR PRODUCING GRAPHENE OXIDE WITH TUNABLE GAP - A method of fabricating a graphene oxide material in which oxidation is confined within the graphene layer and that possesses a desired band gap is provided. The method allows specific band gap values to be developed. Additionally, the use of masks is consistent with the method, so intricate configurations can be achieved. The resulting graphene oxide material is thus completely customizable and can be adapted to a plethora of useful engineering applications.07-19-2012
20100151622ORGANIC THIN FILM TRANSISTOR, FLAT PANEL DISPLAY APPARATUS COMPRISING THE SAME, AND METHOD OF MANUFACTURING THE ORGANIC THIN FILM TRANSISTOR - An organic thin film transistor that can reduce contact resistance between source and drain electrodes and an organic semiconductor layer and can be readily manufactured, a flat panel display apparatus utilizing the organic thin film transistor, and a method of manufacturing the organic thin film transistor. The organic thin film transistor includes: a substrate; a source electrode and a drain electrode disposed on the gate insulating film; a conductive polymer layer disposed to cover at least a portion of each of source and drain electrodes; a hydrophobic material layer disposed on the substrate and the source and drain electrodes except regions where the conductive polymer layer are formed; an organic semiconductor layer electrically connected to the source and drain electrodes; a gate insulating film disposed to cover the organic semiconductor layer; and a gate electrode disposed on the gate insulating film.06-17-2010
20120178208ELECTRONIC DEVICE INCLUDING AN ORGANIC ACTIVE LAYER AND PROCESS FOR FORMING THE ELECTRONIC DEVICE - An electronic device can include an organic active layer and an electrode. In one aspect, the electrode can further include a first layer that is conductive, and a second layer that is conductive. The second layer can include a defect extending at least partly through a thickness of the second conductive layer. The electrode can also include a third layer lying within and substantially filling the defect, wherein each of the second and third layers includes a same metallic element.07-12-2012
20100112751ORGANIC DIODES AND MATERIALS - Diodes having p-type and n-type regions in contact, having at least one of either the p-type region or n-type region including a conjugated organic material doped with an immobile dopant, conjugated organic materials for incorporation into such diodes, and methods of manufacturing such diodes and materials are provided.05-06-2010
20100112749POLYSILAZANE, METHOD OF SYNTHESIZING POLYSILAZANE, COMPOSITION FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE COMPOSITION - Disclosed are polysilazane, a method of synthesizing the polysilazane, a composition for manufacturing a semiconductor device, and a method of manufacturing a semiconductor device using the composition. The polysilazane is synthesized through a reaction, under a catalyst, between dichlorosilane, trichlorosilane, and ammonia added in a reaction solvent as a reactant. In this instance, a polystyrene conversion weight average molecular weight of the polysilazane is about 2,000 to 30,000.05-06-2010
20100029041ORGANIC SEMICONDUCTOR MATERIAL AND ORGANIC ELECTRONIC DEVICE - An organic semiconductor material comprising a compound which has a generalized porphyrin skeleton and which has a molecular structure such that the distance from the generalized porphyrin ring plane to the center of each atom forming the generalized porphyrin skeleton, is not more than 1A.02-04-2010
20100035376METHOD OF LOCALLY CRYSTALLIZING ORGANIC THIN FILM AND METHOD OF FABRICATING ORGANIC THIN FILM TRANSISTOR USING THE SAME - A method of partially crystallizing an organic thin film and a method of fabricating an organic thin film transistor (OTFT) are provided. An organic thin film used as an active layer of an OTFT is partially coated with an organic solvent by direct graphic art printing or partially annealed by laser beam irradiation, thereby local improving the crystallinity of the organic thin film. The charge mobility of the OTFT can be improved and crosstalk between devices can be reduced without additional patterning the organic thin film.02-11-2010
20100099215THIN FILM TRANSISTOR, FLAT PANEL DISPLAY INCLUDING THE THIN FILM TRANSISTOR, AND METHOD FOR MANUFACTURING THE THIN FILM TRANSISTOR AND THE FLAT PANEL DISPLAY - A thin film transistor having a transformed region that provides the same result as patterning a semiconductor layer, a flat panel display having the thin film transistor and a method for manufacturing the thin film transistor and the flat panel display are disclosed. The thin film structure includes a gate electrode, a source and a drain electrode, each insulated from the gate electrode and an organic semiconductor layer coupled to the source electrode and the drain electrode. The organic semiconductor layer includes the transformed region having a crystal structure distinguished from crystal structures of regions around the channel region.04-22-2010
20100144086SYNTHESIS OF ACENES AND HYDROXY-ACENES - A method comprising reducing an acenequinone to form an acenepolyhydrodiol by exposing the acenequinone to a reducing environment comprising an alkoxyaluminate.06-10-2010
20130029455METHOD FOR MANUFACTURING TWO ADJACENT AREAS MADE OF DIFFERENT MATERIALS - The invention relates to a method for manufacturing adjacent first and second areas of a surface, said areas consisting, respectively, of first and second materials that are different from each other. Said method involves: depositing a first liquid volume that encompasses the first area and comprises a solvent in which the first material is dispersed; depositing a second liquid volume that encompasses the second area and comprises a solvent in which the second material is dispersed; and removing the solvents. According to the invention, the solvents of the first and second volumes are immiscible, and the second volume is simultaneously or consecutively deposited with the deposition of the first volume, before the first volume reaches the second area.01-31-2013
20100009497PERFORMANCE IMPROVEMENTS OF OFETS THROUGH USE OF FIELD OXIDE TO CONTROL INK FLOW - An OFET includes a thick dielectric layer with openings in the active region of a transistor. After the field dielectric layer is formed, semiconductor ink is dropped in the active region cavities in the field dielectric layer, forming the semiconductor layer. The ink is bounded by the field dielectric layer walls. After the semiconductor layer is annealed, dielectric ink is dropped into the same cavities. As with the semiconductor ink, the field dielectric wall confines the flow of the dielectric ink. The confined flow causes the dielectric ink to pool into the cavity, forming a uniform layer within the cavity, and thereby decreasing the probability of pinhole shorting. After the dielectric is annealed, a gate layer covers the active region thereby completing a high performance OFET structure.01-14-2010
20100093129SEMICONDUCTING INK FORMULATION - A semiconducting ink formulation comprises a semiconducting material; a first solvent; and a second solvent which is miscible with the first solvent, has a surface tension equal to or greater than the surface tension of the first solvent, and in which the semiconducting material has a solubility of less than 0.1 wt % at room temperature The surface tension of the ink formulation can be controlled, allowing the formation of semiconducting layers in organic thin film transistors, including top-gate transistors.04-15-2010
20090124040FIELD EFFECT TRANSISTOR, METHOD OF PRODUCING THE SAME, AND METHOD OF PRODUCING LAMINATED MEMBER - There is provided a field effect transistor having an organic semiconductor layer, including: an organic semiconductor layer containing at least porphyrin; and a layer composed of at least a polysiloxane compound, the layer being laminated on the organic semiconductor layer so as to be in intimate contact with the organic semiconductor layer. As a result, there can be provided a field effect transistor which enables an organic semiconductor layer having high crystallinity and high orientation to be formed and which exhibits a high mobility.05-14-2009
20090124039LOW TEMPERATURE DEPOSITION OF PHASE CHANGE MEMORY MATERIALS - A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350° C. with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.05-14-2009
20130045566SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a conductive layer formed in the junction region and a boundary layer arranged to wrap a side and a bottom of the conductive layer.02-21-2013
20090263933FIELD EFFECT TRANSISTOR AND METHOD OF PRODUCING SAME - A field effect transistor is provided which comprises an organic semiconductor layer comprising a compound having a monobenzoporphyrin skeleton represented by the general formula (1):10-22-2009
20110065234ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An organic light emitting display device and a method of fabricating the same are provided. The organic light emitting display device includes a substrate, a first electrode formed on the substrate, an inorganic pixel defining layer formed on the first electrode and having an opening exposing at least a portion of the first electrode, an organic layer disposed on the first electrode and having at least an organic emission layer, and a second electrode formed on the organic layer.03-17-2011
20130065359SELECTIVELY ETCHING OF A CARBON NANO TUBES (CNT) POLYMER MATRIX ON A PLASTIC SUBSTRUCTURE - The present invention refers to a method for selectively structuring of a polymer matrix comprising CNT (carbon nano tubes) on a flexible plastic substructure. The method also includes a suitable etching composition, which allows to proceed the method in a mass production.03-14-2013
20130065358Method for Producing (Electro) Luminescent, Photoactive or Electrically (Semi) Conducting Polymers - The invention concerns the production of poly(arylene-vinylenes) and related polymers whose polymerization is triggered photochemically. For that purpose, the low molecular starting materials are firstly cooled to temperatures which are so low that in fact their activation into mostly chinoid intermediate stages (the “active” monomer) occurs; the thermally induced polymerization, however, either does not occur or barely takes place at all. The polymerization is instead triggered in a separate step by means of electromagnetic radiation of a suitable wavelength—either using the absorption behavior of the low-molecular starting compounds/the monomers, or mediated by means of photoinitiators and/or sensitizers.03-14-2013
20090047753Scaffold-organized clusters and electronic devices made using such clusters - A method for forming arrays of metal, alloy, semiconductor or magnetic clusters is described. The method comprises placing a scaffold on a substrate, the scaffold comprising, for example, polynucleotides and/or polypeptides, and coupling the clusters to the scaffold. Methods of producing arrays in predetermined patterns and electronic devices that incorporate such patterned arrays are also described.02-19-2009
20130095605LEAVING SUBSTITUENT-CONTAINING COMPOUND, ORGANIC SEMICONDUCTOR MATERIAL FORMED THEREFROM, ORGANIC ELECTRONIC DEVICE, ORGANIC THIN-FILM TRANSISTOR AND DISPLAY DEVICE USING THE ORGANIC SEMICONDUCTOR MATERIAL, METHOD FOR PRODUCING FILM-LIKE PRODUCT, PI-ELECTRON CONJUGATED COMPOUND AND METHOD FOR PRODUCING THE PI ELECTRON CONJUGATED COMPOUND - A leaving substituent-containing compound represented by General Formula (I), wherein the leaving substituent-containing compound can be converted to a compound represented by General Formula (Ia) and a compound represented by General Formula (II), by applying energy to the leaving substituent-containing compound, in General Formulas (I), (Ia) and (II), X and Y each represent a hydrogen atom or a leaving substituent, where one of X and Y is the leaving substituent and the other is the hydrogen atom; Q04-18-2013
20090170237Printed organic logic circuits using an organic semiconductor as a resistive load device - A method of forming an organic inverter includes providing a first metal layer having a first portion for coupling a source of an OFET to a first power supply voltage, a second portion for coupling a drain of the OFET to an output terminal and a first load resistor terminal, and a third portion for coupling a second load resistor terminal to a second power supply voltage, providing a semiconductor layer for overlapping a portion of the first and second first metal layer portions to form an OFET active area, and for overlapping a portion of the second and third metal layer portions to form a toad resistor, providing a dielectric layer for overlapping the active area of the OFET and the semiconductor area of the load resistor to isolates the first metal layer and semiconductor area from the second metal layer, and providing a second metal layer for overlapping the active area of the OFET to form a gate of the OFET and an input terminal.07-02-2009
20120100667ORGANIC SEMICONDUCTOR INK COMPOSITION AND METHOD FOR FORMING ORGANIC SEMICONDUCTOR PATTERN USING THE SAME - Provided is an ink that is the most suitable for a method for forming an organic transistor by transferring a pattern using a liquid-repellent transfer substrate, for example, a microcontact printing method or a reverse printing method. Specifically, provided is an organic semiconductor ink composition which can provide a uniform ink coating film on a surface of a liquid-repellent transfer substrate and which can provide a dry ink film or a semi-dry ink film capable of being easily transferred from the transfer substrate to a transfer-receiving base material. Also provided is a method for forming an organic semiconductor pattern of an organic transistor, the method using the organic semiconductor ink composition. The organic semiconductor ink composition used for obtaining a desired pattern by transferring an ink layer formed on a liquid-repellent transfer substrate to a printing base material contains an organic semiconductor, an organic solvent, and a fluorine-based surfactant.04-26-2012
20100273290MOCVD SINGLE CHAMBER SPLIT PROCESS FOR LED MANUFACTURING - In one embodiment a method for fabricating a compound nitride semiconductor device comprising positioning one or more substrates on a susceptor in a processing region of a metal organic chemical vapor deposition (MOCVD) chamber comprising a showerhead, depositing a gallium nitride layer over the substrate with a thermal chemical-vapor-deposition process within the MOCVD chamber by flowing a first gallium containing precursor and a first nitrogen containing precursor through the showerhead into the MOCVD chamber, removing the one or more substrates from the MOCVD chamber without exposing the one or more substrates to atmosphere, flowing a chlorine gas into the processing chamber to remove contaminants from the showerhead, transferring the one or more substrates into the MOCVD chamber after removing contaminants from the showerhead, and depositing an InGaN layer over the GaN layer with a thermal chemical-vapor-deposition process within the MOCVD chamber is provided.10-28-2010
20100029040METHOD FOR FORMING ORGANIC SEMICONDUCTOR THIN FILM AND METHOD OF MANUFACTURING THIN-FILM SEMICONDUCTOR DEVICE - A method for forming an organic semiconductor thin film includes the steps of forming a mixed ink layer on a principal plane of a printing plate, the mixed ink layer including a mixture of an organic semiconductor material incapable of transcription and an organic material capable of transcription from the printing plate to a substrate in ink form dissolved in a solvent, and forming an organic semiconductor thin film by transcribing the mixed ink layer onto the substrate by transcribing the mixed ink layer on the printing plate to the substrate.02-04-2010
20090087944ELECTRONIC DEVICES WITH HYBRID HIGH-K DIELECTRIC AND FABRICATION METHODS THEREOF - Electronic devices with hybrid high-k dielectric and fabrication methods thereof. The electronic device includes a substrate. A first electrode is disposed on the substrate. Hybrid high-k multi-layers comprising a first dielectric layer and a second dielectric layer are disposed on the substrate, wherein the first dielectric layer and the second dielectric layer are solvable and substantially without interface therebetween. A second electrode is formed on the hybrid multi-layers.04-02-2009
20110281393Method of Making an Organic Semiconductor Device - A method of making an organic semiconductor device that comprises providing a surface comprising surface hydroxyl groups; applying an amine to the surface to form a first coated surface; applying a silane compound to the first coated surface to form a second coated surface; exposing the second coated surface to conditions sufficient to chemically react the silane compound with the hydroxyl groups to form a hydrophobic surface; and applying an organic semiconducting material to the hydrophobic surface.11-17-2011
20080311698Fabrication of self-aligned via holes in polymer thin films - A low-cost and efficient process produces self-aligned vias in dielectric polymer films that provides electrical connection between a top conductor and a bottom conductor. The process is achieved by printing conductive posts on the first patterned conductive layer, followed by the deposition of an unpatterned layer dielectric, followed by the deposition of a second patterned conductive layer. The vias are formed during the flash annealing of the post after the dielectric is deposited, but before the second conductive layer is deposited. In this process, the post material is annealed with a flash of light, resulting in a release of energy which removes the dielectric on the top of the post.12-18-2008
20110294257METHODS OF PROVIDING SEMICONDUCTOR LAYERS FROM AMIC ACID SALTS - A semiconductor layer and device can be provided using a method including thermally converting an aromatic, non-polymeric amic acid salt to a corresponding arylene diimide. The semiconducting thin films can be used in various articles including thin-film transistor devices that can be incorporated into a variety of electronic devices. In this manner, the arylene diimide need not be coated but is generated in situ from a solvent-soluble, easily coated aromatic, non-polymeric amic acid salt at relatively lower temperature because the cation portion of the salt acts as an internal catalyst.12-01-2011
20100035377Transfer Coating Method - A method for partially coating a structure having one or more small protruding features is provided. The method includes: (a) providing a structure comprising a base and a protruding feature attached to the base of the structure, the feature having a diameter or width of about 1 mm or less; (b) contacting the protruding feature with a substantially uniform layer of viscous coating material, the layer having a pre-determined thickness, to transfer at least some of the coating material from the layer of coating material to the protruding feature, without contacting the base of the structure with the layer of viscous coating material; and (c) separating the structure from the layer of coating material to form a substantially uniformly coated protruding feature, wherein the coating occupies a desired pre-determined area on the feature.02-11-2010
20100035375MASKLESS NANOFABRICATION OF ELECTRONIC COMPONENTS - The present invention relates to systems, materials and methods for the formation of conducting, semiconducting, and dielectric layers, structures and devices from suspensions of nanoparticles. Drop-on-demand systems are used in some embodiments to fabricate various electronic structures including conductors, capacitors, FETs. Selective laser ablation is used in some embodiments to pattern more precisely the circuit elements and to form small channel devices.02-11-2010
20080241989OLED PATTERNING METHOD - A method of patterning a substrate according to several steps, including: a) mechanically locating a first masking film over the substrate; and b) segmenting the first masking film into a first masking portion and one or more first opening portions in first locations. Next, mechanically locate a first removal film over the first masking portion and first opening portions. Afterwards, one or more of the first opening portions are adhered to the first removal film. The first removal film and one or more of the first opening portions adhered to the first removal film are mechanically removed to form one or more first openings in the first masking film. Finally, materials are deposited over the substrate through the first openings in the first masking film.10-02-2008
20090098680BACKPLANE STRUCTURES FOR SOLUTION PROCESSED ELECTRONIC DEVICES - There is provided a backplane for an organic electronic device. The backplane has a TFT substrate having a multiplicity of electrode structures thereon; a bank structure defining pixel areas over the electrode structures; and a thin layer of insulative inorganic material between the electrode structures and the bank structures. The bank structure is removed from and not in contact with the electrode structures by a distance of at least 0.1 microns.04-16-2009
20090215223ELECTROLUMINESCENT DEVICE - An optical device comprising an anode, a cathode comprising barium, strontium or calcium, and a layer of organic semiconducting material between the anode and the cathode wherein a layer of hole transporting and electron blocking material is located between the anode and the layer of organic semiconducting material.08-27-2009
20090148979FABRICATING APPARATUS WITH DOPED ORGANIC SEMICONDUCTORS - A method includes forming a semiconducting region including polyaromatic molecules on a surface of a substrate. The method also includes forming over the region a substantially oxygen impermeable dielectric layer. The act of forming a semiconducting region includes exposing the molecules to oxygen while exposing the molecules to visible or ultraviolet light.06-11-2009
20120083069ORGANIC THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - Disclosed are an organic thin film transistor and a method of manufacturing the same, in which a crystalline organic binder layer is on the surface of an organic insulating layer and source/drain electrodes or on the surface of the source/drain electrodes. The organic thin film transistor may be improved in two-dimensional geometric lattice matching and interface stability at the interface between the organic semiconductor and the insulating layer or at the interface between the organic semiconductor layer and the electrode, thereby improving the electrical properties of the device.04-05-2012
20100279460ORGANIC THIN FILM TRANSISTOR - To provide an organic thin film transistor including a pair of electrodes for allowing a current to flow through an organic semiconductor layer made of an organic semiconductor material, and a third electrode, wherein the organic semiconductor material is composed mainly of an arylamine polymer having a weight-average molecular weight (Mw) of 20,000 or more.11-04-2010
20120034736THIN-FILM TRANSISTORS - A thin film transistor having a semiconducting layer with improved flexibility and/or mobility is disclosed. The semiconducting layer comprises a semiconducting polymer and insulating polymer. Methods for forming and using such thin-film transistors are also disclosed.02-09-2012
20100120196NANO-ARRAY AND FABRICATION METHOD THEREOF - The invention provides a method for fabricating a nano-array comprising the following steps. A template with a plurality of nano-holes is provided. A polymer is embossed by the template to integrally form a plurality of nano-protrusions thereon, and demolding to reveal the nano-protrusions. The nano-protrusion has a concave or convex top surface.05-13-2010
20090253228ORGANIC THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME, AND ACTIVE MATRIX DISPLAY AND RADIO RECOGNITION TAG USING THE SAME - An organic thin film transistor of the present invention includes a substrate (10-08-2009
20090263932Organic semiconductor thin films using aromatic enediyne derivatives and manufacturing methods thereof, and electronic devices incorporating such films - Disclosed are organic semiconductor thin films using aromatic enediyne derivatives, manufacturing methods thereof, and methods of fabricating electronic devices incorporating such organic semiconductor thin films. Aromatic enediyne derivatives according to example embodiments provide improved chemical and/or electrical stability which may improve the reliability of the resulting semiconductor devices. Aromatic enediyne derivatives according to example embodiments may also be suitable for deposition on various substrates via solution-based processes, for example, spin coating, at temperatures at or near room temperature to form a coating film that is then heated to form an organic semiconductor thin film. The availability of this reduced temperature processing allows the use of the aromatic enediynes derivatives on large substrate surfaces and/or on substrates not suitable for higher temperature processing. Accordingly, the organic semiconductor thin films according to example embodiments may be incorporated in thin film transistors, electroluminescent devices, solar cells, and memory devices.10-22-2009
20110171775METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes forming a first insulating film over an underlying film by plasma polymerization of cyclic siloxane, and forming a second insulating film on the first insulating film by plasma polymerization of the cyclic siloxane continuously, after forming the first insulating film. The deposition rate of the first insulating film is slower than the deposition rate of the second insulating film.07-14-2011
20090093082ORGANIC LIGHT-EMITTING DIODE AND METHOD OF FABRICATING THE SAME - An organic light-emitting diode and method of fabricating the same. The organic light-emitting diode includes a first substrate, a first electrode installed on an inner surface of the first substrate, an organic light-emitting layer installed on the first electrode, a second electrode installed on the organic light-emitting layer, an oxide layer formed on the second electrode, and a second substrate bound to the inner surface of the first substrate to form an airtight space.04-09-2009
20110223714NOVEL COMPOUND AND METHOD OF PRODUCING ORGANIC SEMICONDUCTOR DEVICE - A method of producing an organic semiconductor device is provided in which a layer composed of an organic semiconductor having excellent crystallinity and orientation in a low-temperature region can be formed, and the device can be produced in the air. The method includes forming a layer composed of an organic semiconductor precursor on a base body and irradiating the organic semiconductor precursor with light, wherein the organic semiconductor precursor is a porphyrin compound or an azaporphyrin compound having in its molecule at least one of the structure represented by the following general formula (1) or (2):09-15-2011
20100136741BRANCHED PHENYLENE-TERMINATED THIOPHENE OLIGOMERS - A composition comprising a plurality of molecules. Each of the molecules has a core comprising at least one aromatic ring and at least three pendant arms chemically bonded to the core. The pendant arms comprise a phenylene-terminated thiophene oligomer.06-03-2010
20080274584Method of microwave annealing for enhancing organic electronic devices - A method of microwave annealing for enhancing the properties of organic electronic devices is provided, including the steps of providing organic electronic devices and then microwave annealing the organic electronic devices. Because microwave annealing is non-contact and requires only a short time for annealing, and also because it anneals a target selectively and may anneal only the organic active layer of organic electronic device, microwave annealing allows organic molecules in the organic active layer to be rearranged quickly, so as to improve the arrangement of the organic molecules, and this in turn elevates the quantum efficiency thereof and enhances the properties of the organic electronic devices.11-06-2008
20090053851ORGANIC THIN FILM TRANSISTOR ARRAY SUBSTRATE AND LIQUID CRYSTAL DISPLAY INCLUDING THE SAME - An organic thin film transistor array substrate including a substrate divided into an LCD region and an OTFT region; a first dielectric layer formed on the substrate in the LCD region and having a first uneven portion; an organic semiconducting layer formed on the substrate in the OTFT region; a gate, source, and drain formed in the OTFT region, wherein the source and drain are in contact with the organic semiconducting layer to form a channel between the source and drain; and a pixel electrode formed on the first uneven portion of the first dielectric layer in the LCD region.02-26-2009
20110269265METHODS OF PREPARING SEMICONDUCTIVE COMPOSITIONS AND DEVICES - An amic acid or amic ester precursor can be applied to a substrate and thermally converted into a semiconducting layer of the corresponding arylene diimide. This semiconducting thin film can be used in various articles including thin-film transistor devices that can be incorporated into a variety of electronic devices. In this manner, the arylene diimide need not be coated but is generated in situ from a solvent-soluble, easily coated precursor compound.11-03-2011
20080305574METHOD OF MANUFACTURING NONVOLATILE MEMORY DEVICE USING CONDUCTIVE ORGANIC POLYMER HAVING NANOCRYSTALS EMBEDDED THEREIN - The method of manufacturing a nonvolatile memory device includes forming a lower conductive layer on a substrate; forming a first conductive organic layer on the substrate using spin coating; forming a metal layer for forming nanocrystals on the first conductive organic layer, the metal layer partially overlapping the first conductive organic layer; forming a second conductive organic layer on the first conductive organic layer using spin coating; transforming the metal layer into nanocrystals by curing; and forming an upper conductive layer on the second conductive organic layer, the upper conductive layer partially overlapping the nanocrystals. The conductive organic polymer may be poly-N-vinylcarbazole (PVK) or polystyrene (PS).12-11-2008
20100144085SUBSTRATE STRUCTURES AND FABRICATION METHODS THEREOF - Substrate structures and fabrication methods thereof. A substrate structure includes a bendable substrate and an inorganic electrode structure on the bendable structure, wherein the inorganic electrode structure includes a conductive layer or a semiconductor layer. The inorganic electrode structure includes carbon nanotubes, carbon nanofibers, a nanolinear material, or a micro-linear material. The bendable substrate includes polyethylene (PE), polyimide (PI), polyvinyl alcohol (PVA), or polymethyl methacrylate (PMMA).06-10-2010
20100273291DECONTAMINATION OF MOCVD CHAMBER USING NH3 PURGE AFTER IN-SITU CLEANING - Embodiments of the present invention generally relate to methods and apparatus for removing unwanted deposition build-up from one more interior surfaces of a substrate processing chamber after a substrate is processed in a chamber to form, for example, Group III-V materials by metal-organic chemical vapor deposition (MOCVD) deposition processes and/or hydride vapor phase epitaxial (HVPE) deposition processes. In one embodiment, a method for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber is provided. The method comprises depositing one or more Group III containing layers over a substrate disposed in the substrate processing chamber, transferring the substrate out of the substrate processing chamber, and pulsing a halogen containing gas into the substrate processing chamber to remove at least a portion of the unwanted deposition build-up from one or more interior surfaces of the substrate processing chamber.10-28-2010
20100273292MODIFYING A SURFACE IN A PRINTED TRANSISTOR PROCESS - A method of forming an electronic device includes depositing a dielectric, forming a first functional material layer having a first surface energy, depositing at least one first at least semiconductive feature of the device, forming a second functional material layer to provide a surface having a second surface energy, and depositing at least one second at least semiconductive feature of the device to connect to the first at least semiconductive feature of the device. A method of forming an electronic device includes depositing a first, dielectric material, depositing a second material, depositing at lease one first at least semiconductive feature of the device on the second material, altering the second material to form a altered second material, and depositing at least one at least semiconductive feature from solution to connect the first semiconductive feature of the device. An electronic device has a substrate, a dielectric layer, a first functional layer having a first surface energy, at least one first at least semiconductive feature on the first functional layer, a second functional layer in a region between adjacent to the first at least semiconductive features, and at least one second at least semiconductive feature on the second functional layer.10-28-2010
20090004772METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - An object of the invention is to provide a method for manufacturing semiconductor devices that are flexible in which elements fabricated using a comparatively low-temperature (less than 500° C.) process are separated from a substrate. After a molybdenum film is formed over a glass substrate, a molybdenum oxide film is formed over the molybdenum film, a nonmetal inorganic film and an organic compound film are stacked over the molybdenum oxide film, and elements fabricated by a comparatively low-temperature (less than 500° C.) process are formed using existing manufacturing equipment for large glass substrates, the elements are separated from the glass substrate.01-01-2009
20090004771METHODS FOR MAKING ELECTRONIC DEVICES WITH A SOLUTION DEPOSITED GATE DIELECTRIC - A method of making an electronic device comprises solution depositing a dielectric composition onto a substrate and polymerizing the dielectric composition to form a gate dielectric. The dielectric composition comprises a polymerizable resin and zirconium oxide nanoparticles.01-01-2009
20100151621METHOD FOR MANUFACTURING AN ORGANIC SEMICONDUCTOR ELEMENT - In manufacturing a device using an organic TFT, it is essential to develop an element in which a channel length is short or a channel width is narrow to downsize a device. Based on the above, it is an object of the present invention to provide an organic TFT in which characteristic is improved. In view of the foregoing problem, one feature of the present invention is that an element is baked after an organic semiconductor film is deposited. More specifically, one feature of the present invention is that the organic semiconductor film is heated under atmospheric pressure or under reduced pressure. Moreover, a baking process may be carried out in an inert gas atmosphere.06-17-2010
20110223715THIN FILM TRANSISTOR INCLUDING ORGANIC SEMICONDUCTOR LAYER AND SUBSTRATE INCLUDING THE SAME - Provided is a thin film transistor including a gate electrode on a substrate; a gate insulating layer on the gate electrode; source and drain electrodes including first source and drain layers on the gate insulating layer, respectively, and spaced apart from each other, wherein at lease one of the first source and drain layers includes indium-tin-oxide doped with at least one Group III element; and an organic semiconductor layer on the gate insulating layer and contacting the first source and drain layers.09-15-2011
20100248421Method of forming organic thin film and method of manufacturing semiconductor device using the same - Provided are a method of forming an organic semiconductor thin film and a method of manufacturing a semiconductor device using the. According to example embodiments, a method of forming an organic semiconductor thin film at least may include exposing a lower substrate coated with an organic semiconductor solution using a method of generating a shearing stress to the portion of the lower substrate coated with the organic semiconductor solution. A guide structure may be formed adjacent to the organic semiconductor solution.09-30-2010
20090081824STACKED ORGANIC MEMORY DEVICES AND METHODS OF OPERATING AND FABRICATING - The present invention provides a multi-layer organic memory device that can operate as a non-volatile memory device having a plurality of stacked and/or parallel memory structures constructed therein. A multi-cell and multi-layer organic memory component can be formed with two or more electrodes having a selectively conductive media between the electrodes forming individual cells, while utilizing a partitioning component to enable stacking of additional memory cells on top of or in association with previously formed cells. Memory stacks can be formed by adding additional layers—respective layers separated by additional partitioning components, wherein multiple stacks can be formed in parallel to provide a high-density memory device.03-26-2009
20120171811ORGANIC SEMICONDUCTOR COMPOSITIONS WITH NANOPARTICLES - A method of fabricating a circuit includes chemically bonding a coating to a plurality of nanoparticles. The nanoparticles are dispersed in a medium comprising organic molecules. An organic semiconductor channel is formed that comprises the medium. A plurality of electrodes is formed over the substrate. The electrodes are located to function as two of a gate electrode, a drain electrode, and a source electrode of a field-effect transistor.07-05-2012
20090117686METHOD OF FABRICATING ORGANIC SEMICONDUCTOR DEVICE - A method of fabricating an organic semiconductor device includes following steps. A gate conductive layer is formed on a substrate, and then a gate dielectric layer is formed. Next, patterned metal layers are formed on the gate dielectric layer beside the gate conductive layer. An electrode modified layer is then formed on the surface and the sidewall of each patterned metal layer, and the patterned metal layers and the electrode modified layers formed thereon serve as a source and a drain. Thereafter, an organic semiconductor layer is formed on the source and the drain and on a portion of the gate dielectric layer exposed between the source and the drain to be an active layer.05-07-2009
20090221113METHOD OF FABRICATING ORGANIC MEMORY DEVICE - A method of fabricating an organic memory device is provided. In the method, a bottom electrode is formed on a substrate. A first surface treatment is performed on the bottom electrode to form a bottom surface treatment layer on a surface thereof. A polymer thin film is formed on the bottom surface treatment layer, and a top electrode is formed on the polymer thin film.09-03-2009
20090275167METHOD MAKING AN ELECTRICAL DEVICE - Conventionally, organic semiconductor devices are usually formed by either laser ablation, photolithography or by conductive inkjet printing. All these methods have short coming such as either being unsuitable for high volume production, slow, expensive or as is particularly the case in inject printing, the choice of metals used is restricted to those which can be formed as inks. The present invention employs flexography to print a resist pattern (11-05-2009
20110111552Method for forming organic layers of electronic devices by contact printing - A method for forming organic layers of electronic devices by contact printing is disclosed, which comprises: (A) providing a substrate, which has an electrode formed thereon; (B) coating an organic material ink onto a mold; (C) applying the ink-coated mold onto the substrate, to transfer the organic material ink onto the electrode of the substrate and then to form an organic layer; and (D) forming another electrode on the organic layer. In addition, after the step (C) is completed, the steps (B) to (C) can be repeated once or several times to form series of organic layers, if needed.05-12-2011
20130122647PROCESS FOR PRODUCING INDIUM OXIDE-CONTAINING LAYERS, INDIUM OXIDE-CONTAINING LAYERS PRODUCED BY THE PROCESS AND USE THEREOF - The present invention relates to a liquid phase process for producing indium oxide-containing layers from nonaqueous solution, in which an anhydrous composition containing at least one indium halogen alkoxide of the generic formula InX(OR)05-16-2013
20100184252METHOD FOR MANUFACTURING ORGANIC THIN FILM TRANSISTOR AND ORGANIC THIN FILM TRANSISTOR - A method for manufacturing an organic thin film transistor having excellent characteristics by a simple process, and an organic thin film transistor are provided. In a manufacture method of an organic thin film transistor element having a gate electrode, a gate insulation layer, an organic semiconductor layer and a source electrode and a drain electrode on a support, the method is characterized by comprising a step for forming an organic semiconductor precursor layer by applying a solution in which an organic semiconductor precursor is dissolved, and a step for forming an organic semiconductor layer by converting the organic semiconductor precursor to an organic semiconductor by exposing the organic semiconductor precursor layer to a discharging gas in a plasma state.07-22-2010
20110111555SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - It is an object of the present invention to form an organic transistor including an organic semiconductor having high crystallinity without loosing an interface between an organic semiconductor of a channel where carriers are spread out and a gate insulating layer and deteriorating a yield. A semiconductor device according to the present invention has a stacked structure of organic semiconductor layers, and at least the upper organic semiconductor layer is in a polycrystalline or a single crystalline state and the lower organic semiconductor layer is made of a material serving as a channel. Carrier mobility can be increased owing to the upper organic semiconductor layer having high crystallinity; thus, insufficient contact due to the upper organic semiconductor layer can be compensated by the lower organic semiconductor layer.05-12-2011
20100159635METHOD OF PATTERNING CONDUCTIVE LAYER AND DEVICES MADE THEREBY - Methods for patterning a conductor through oxidation are provided. Devices fabricated using the method include organic transistors having a gate electrode and dielectric layer patterned by the method, source and drain electrodes, and an organic semiconducting layer.06-24-2010
20100233845Thin Film Applications of Perfluoroisopropyl-Substituted Perfluorophthalocyanines - Perfluoroisopropyl-substituted perfluorophtalocyanines, including zinc (II), copper (II) and oxo-vanadium (IV) complexes of 29H,31H,1,4,8,11,15,18,22,25-octakis-fluoro-2,3,9,10,16,17,23,24-octakis-perfluoro(isopropyl)phthalocyanine (F09-16-2010
20100136740SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - It is an object of the present invention to form an organic transistor including an organic semiconductor having high crystallinity without loosing an interface between an organic semiconductor of a channel where carriers are spread out and a gate insulating layer and deteriorating a yield. A semiconductor device according to the present invention has a stacked structure of organic semiconductor layers, and at least the upper organic semiconductor layer is in a polycrystalline or a single crystalline state and the lower organic semiconductor layer is made of a material serving as a channel. Carrier mobility can be increased owing to the upper organic semiconductor layer having high crystallinity; thus, insufficient contact due to the upper organic semiconductor layer can be compensated by the lower organic semiconductor layer.06-03-2010
20100197074THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURE - A thin film transistor array panel includes a gate line formed on a substrate, an interlayer insulating film formed on the gate line and having an opening, a gate insulator formed in the opening, a data line formed on the interlayer insulating film and including a first conductive layer made of a transparent conductive oxide and a second conductive layer made of a metal, a source electrode connected to the data line and made of a transparent conductive oxide, a drain electrode facing the source electrode and made of a transparent conductive oxide, a pixel electrode connected to the drain electrode, and an organic semiconductor contacting the source electrode and the drain electrode.08-05-2010
20100197075MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - In view of the problem that an organic semiconductor layer of an organic TFT is likely to deteriorate due to water, light, oxygen, or the like, it is an object of the present invention to simplify a manufacturing step and to provide a method for manufacturing a semiconductor device having an organic TFT with high reliability. According to the invention, a semiconductor layer containing an organic material is formed by patterning using a mask, and thus an organic TFT is completed in the state where the mask is not removed but to remain over the semiconductor layer. In addition, a semiconductor layer can be protected from deterioration due to water, light, oxygen, or the like by using the remaining mask.08-05-2010
20090170238Printed organic logic circuits using a floating gate transister as a load device - A method of forming an organic inverter includes providing a first metal layer having a first portion for coupling a source of a first OFET to a first power supply voltage, a second portion for coupling a drain of the first OFET to an output terminal and to a source of a second OFET, and a third portion for coupling a drain of the second OFET to a second power supply voltage, providing a semiconductor layer for overlapping a portion of the first and second first metal layer portions to form a first OFET active area, and for overlapping a portion of the second and third metal layer portions to form a second OFET active area, providing a dielectric layer for overlapping the active area and isolates the first metal layer and semiconductor layer from the second metal layer, and providing a second metal layer for overlapping the active area of the first OFET to form a gate of the first OFET and an input terminal, and for overlapping the active area of the second OFET to form a floating gate for the second OFET.07-02-2009
20090111211FLAT PANEL DISPLAY AND MANUFACTURING METHOD OF FLAT PANEL DISPLAY - The present disclosure relates to a display device comprising an insulating substrate; a source electrode and a drain electrode on the insulating substrate and separated by a channel area; an organic semiconductor layer formed in the channel area and on at least a portion of the source electrode and at least a portion of the drain electrode; and a self-assembly monolayer having a first portion disposed between the organic semiconductor layer and the source electrode and a second portion disposed between the organic semiconductor layer and the drain electrode to reduce contact resistance between the electrodes and the organic semiconductor layer. Thus, embodiments of present invention provide a display device including a TFT that is enhanced in its performance.04-30-2009
20100297808MOLECULAR ELECTRONIC DEVICE INCLUDING ORGANIC DIELECTRIC THIN FILM AND METHOD OF FABRICATING THE SAME - Provided are a molecular electronic device and a method of fabricating the molecular electronic device. The molecular electronic device includes a substrate, an organic dielectric thin film formed over the substrate, a molecular active layer formed on the organic dielectric thin film and having a charge trap site, and an electrode formed on the molecular active layer. The organic dielectric thin film may be immobilized on the electrode or a Si layer by a self-assembled method. The organic dielectric thin film may include first and second molecular layers bound together through hydrogen bonds. An organic compound may be self-assembled over the substrate to form the organic dielectric thin film. The organic compound may include an M′-R-T structure, where M′, R and T represent a thiol or silane derivative, a saturated or unsaturated C11-25-2010
20100297809ORGANIC TRANSISTOR, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND ORGANIC TRANSISTOR - It is an object to form a high quality gate insulating film which is dense and has a strong insulation resistance property, and to propose a high reliable organic transistor in which a tunnel leakage current is little. One mode of the organic transistor of the present invention has a step of forming the gate insulating film by forming the conductive layer which becomes the gate electrode activating oxygen (or gas including oxygen) or nitrogen (or gas including nitrogen) or the like using dense plasma in which density of electron is 1011-25-2010
20110117695FABRICATION METHOD OF ORGANIC THIN-FILM TRANSISTORS - This invention discloses a fabrication method of organic thin-film transistors (OTFTs) using the micro-contact printing. The OTFT can be of the bottom-gate or top-gate configuration. The micro-contact printing operation of this fabrication method does not require clean-room environment and high processing temperature, and does not have the problem of 2D shrinkage of the printed patterns either. Furthermore, the pre-wetting technique employed in the micro-contact printing results in improved fidelity in the pattern transfer and solves the problems of pairing and cross-talking between neighboring patterns.05-19-2011
20130137212METHOD OF MANUFACTURING AN ORGANIC THIN FILM TRANSISTOR - There is provided a method of manufacturing an organic thin film transistor. The method includes forming a plurality of barrier ribs on an insulating substrate and forming a plurality of grooves partitioned by the barrier ribs. The method further includes forming a source electrode, a drain electrode, and a gate electrode on the grooves, respectively. The method also includes forming an opening by etching the barrier ribs between the source electrode and the gate electrode and between the gate electrode and the drain electrode. The method further includes forming a gate insulating film on the opening; and forming an organic semiconductor layer on the gate insulating film.05-30-2013
20130143356N-Dopant for Carbon Nanotubes and Graphene - A composition and method for forming a field effect transistor with a stable n-doped nano-component. The method includes forming a gate dielectric on a gate, forming a channel comprising a nano-component on the gate dielectric, forming a source over a first region of the nano-component, forming a drain over a second region of the nano-component to form a field effect transistor, and exposing a portion of a nano-component of a field effect transistor to dihydrotetraazapentacene to produce a stable n-doped nano-component, wherein dihydrotetraazapentacene is represented by the formula:06-06-2013
20130143357METHOD OF FORMING ORGANIC THIN FILM AND ORGANIC THIN FILM FORMING APPARATUS, AS WELL AS METHOD OF MANUFACTURING ORGANIC DEVICE - There is provided a method of forming an organic thin film, capable of forming a single-crystal organic thin film easily and rapidly while controlling a thickness and a size. After an organic solution is supplied to one surface (a solution accumulating region wide in width, and a solution constricting region narrow in width and connected thereto) of a film-formation substrate supported by a support controllable in temperature, a movable body controllable in temperature independently of the support is moved along a surface of the support while being kept in contact with the organic solution. The temperature of the support is set at a temperature positioned between a solubility curve and a super-solubility curve concerning the organic solution, and the temperature of the movable body is set at a temperature positioned on a side higher in temperature than the solubility curve.06-06-2013
20090068788Method and device for producing electronic components - The invention relates to a method for producing electronic components in a vacuum. The aim of the invention is to create flexible electronic components that have an optimum action, are cost-effective, and easy to produce in a single working cycle. To this end, a carrier film (03-12-2009
20090239333Organic semiconductor device and method of manufacturing the same - A low-cost and efficient process producing improved organic electronic devices such as transistors that may be used in a variety of applications is described. The applications may include radio frequency identification (RFID) devices, displays and the like. In one embodiment, the improved process is implemented by flash annealing a substrate with an energy having wavelengths ranging from about 250 nm to about 1100 nm or higher. In this flash annealing process energy having wavelengths from about 250 nm to about 350 nm or higher is substantially prevented from irradiating the substrate.09-24-2009
20110008929ALIGNED POLYMERS FOR AN ORGANIC TFT - A method for forming an electronic device having a semiconducting active layer comprising a polymer, the method comprising aligning the chains of the polymer parallel to each other by bringing the polymer into a liquid-crystalline phase.01-13-2011
20110014744Organic memory devices and methods of fabricating such devices - Disclosed herein are organic memory devices and methods for fabricating such devices. The organic memory devices comprise a first electrode, a second electrode and an organic active layer extending between the first and second electrodes wherein the organic active layer is formed from one or more electrically conductive organic materials that contain heteroatoms and which are configured in such a manner as that the heteroatoms are available for linking or complexing metal atoms within the organic active layer. The metal ions may then be reduced to form metal filaments within the organic active layer to form a low resistance state and the metal filaments may, in turn, be oxidized to form a high resistance state and thereby function as memory devices.01-20-2011
20100178727METHOD OF MANUFACTURING ORGANIC FILM TRANSISTOR - A method of fabricating an organic thin film transistor exhibiting excellent semiconductor performance by which an organic TFT can be formed continuously on a flexible base such as a polymer support through a simple coating process, and thus the fabrication cost can be reduced sharply, and an organic semiconductor layer thus formed has a high carrier mobility, In the method of fabricating an organic thin film transistor by forming a gate electrode, a gate insulation layer, an organic semiconductor layer, a source electrode and a drain electrode sequentially on a support, the organic semiconductor layer contains an organic semiconductor material having an exothermic point and an endothermic point in a differential scanning thermal analysis, and the organic semiconductor layer thus formed is heat-treated at a temperature not less than the exothermic point and less than the endothermic point.07-15-2010
20110033972PROGRAMMABLE POLYELECTROLYTE ELECTRICAL SWITCHES - An apparatus includes a first solid electrode on a substrate, a polyelectrolyte layer over a part of the first solid electrode, a second solid electrode on a portion of the polyelectrolyte layer, and an anchoring layer on the part of the first solid electrode. The polyelectrolyte layer is either chemically bonded to the anchoring layer or has a thickness of less than about 20 nanometers.02-10-2011
20110033973DEPOSITION APPARATUS FOR TEMPERATURE SENSITIVE MATERIALS - A system for the deposition of vaporized materials on a substrate is described, comprising at least first and second orientation-independent apparatuses for directing vaporized organic materials onto a substrate surface to form first and second films, each of the first and second orientation-independent apparatuses being arranged in a different relative orientation and comprising: a chamber containing a quantity of material; a permeable member at one end of the chamber with a heating element for vaporizing the material; and means for continuously feeding the material toward the permeable member as it is vaporized, whereby organic material vaporizes at a desired rate-dependent vaporization temperature at the one end of the chamber. A plurality of thin films may be deposited on a substrate using deposition apparatus in a variety of orientations. Such a design provides reduced costs and improved deposition rate control.02-10-2011
20110033971ORGANIC INVERTER INCLUDING SURFACE-TREATED LAYER AND METHOD OF MANUFACTURING THE SAME - An organic inverter and a method of manufacturing the same are provided, which regulates threshold voltages depending on positions when an inverter circuit is manufactured on a substrate using an organic semiconductor. To form a depletion load transistor and an enhancement driver transistor at adjacent positions of the same substrate, the surface of the substrate is selectively treated by positions or selectively applied by self-assembly monolayer treatment. Thus, a D-inverter having a combination of a depletion mode and an enhancement mode is more easily realized than a conventional method using a transistor size effect. Also, the D-inverter can be realized even with the same W/L ratio, thereby increasing integration density. That is, the W/L ratio does not need to be increased to manufacture a depletion load transistor, thereby improving integration density.02-10-2011
20110111553ADVANCED CMOS USING SUPER STEEP RETROGRADE WELLS - The present invention is a method for forming super steep doping profiles in MOS transistor structures. The method comprises forming a carbon containing layer (05-12-2011
20100178728ARYL DICARBOXYLIC ACID DIIMIDAZOLE-BASED COMPOUNDS AS N-TYPE SEMICONDUCTOR MATERIALS FOR THIN FILM TRANSISTORS - A process for fabricating a thin film semiconductor device includes the following steps, but not necessarily in the noted order. Firstly, a thin film of organic semiconductor material is deposited onto a substrate. This thin film of organic semiconductor material comprises organic semiconductor material that comprises one or more aryl dicarboxylic diimidazole-based compounds of claim 07-15-2010
20110250719Organic Semiconductors - An organic semiconducting compound comprising the structure of formula (I):10-13-2011
20110086467Method of fabricating an organic thin film transistor and method of surface treatment for gate insulating layer - A method of fabricating an organic thin film transistor is disclosed, which comprises steps of (S1) forming a gate electrode on a substrate; (S2) forming a gate insulating layer on the gate electrode; (S3) providing a gas on the surface of the gate insulating layer to form hydrophobic molecules on the surface of the gate insulating layer; (S4) forming an organic semiconductor layer, a source electrode, and a drain electrode over the gate insulating layer having hydrophobic molecules thereon, wherein the gas of step (S3) is at least one selected from the group consisting of halogen-substituted hydrocarbon, un-substituted hydrocarbon, and the mixtures thereof. The method of the present invention utilizes gases comprising carbon or fluorine atom to perform surface treatment on the surface of the gate insulating layer, therefore the hydrophobic character of the surface of the gate insulating layer can be enhanced and the electrical properties of the OTFT can be improved. Also, a method of surface treatment for the gate insulating layer is disclosed.04-14-2011
20090215222Manufacturing method of semiconductor device - When a thin film transistor is manufactured by using a printing method, the precision of alignment between a first electrode and a second electrode becomes a problem. If it is manufactured by using photolithography, a photomask for each layer is necessary, resulting in the cost being increased. The essence of the present invention is that not only processing the gate shape is carried out over the substrate by using a resist pattern formed by exposing using a photo-mask for the gate pattern but also processing the source-drain electrodes is carried out by lifting-off. As a result, alignment between the source-drain electrode and the gate electrode is carried out.08-27-2009
20100136739Embossing Printing for Fabrication of Organic Field Effect Transistors and its Integrated Devices - A method of fabricating an organic field effect transistor (OFET) includes forming at least one OFET structure by ultraviolet (UV) transfer embossing printing, where, in an example embodiment, the method includes providing ink material on at least part of a patterned surface of a mold, where the mold 06-03-2010
20110081746METHOD FOR PRODUCING SEMICONDUCTOR DEVICE - A method for producing a semiconductor device includes the steps of forming an organic semiconductor layer on a substrate; forming a protective pattern on the organic semiconductor layer; and patterning the organic semiconductor layer by dissolving, in an organic solvent, or subliming the organic semiconductor layer using the protective pattern as a mask.04-07-2011
20100112750Post-Processing Treatment of Conductive Polymers to Enhance Electrical Conductivity - A method for enhancing electrical conductivity of a film which includes at least one conductive polymer. The method includes providing the film comprising the at least one conductive polymer and at least one polymer acid, agitating the film in at least one reagent; and, placing the film on a heated surface. The at least one reagent includes a reagent acid that is stronger than the polymer acid. The conductivity of the treated film is significantly greater than the conductivity of the untreated film.05-06-2010
20080248609DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - A constitution of the display device of the invention is shown in the following. The display device includes a pixel unit including TFTs of which the active layer contains an organic semiconductor material for forming channel portions in the opening portions in an insulating layer arranged to meet the gate electrodes. The pixel unit further includes a contrast media formed on the electrodes connected to the TFTs for changing the reflectivity upon the application of an electric field, or microcapsules containing electrically charged particles that change the reflectivity upon the application of an electric field. The pixel unit is sandwiched by plastic substrates, and barrier layers including an inorganic insulating material are provided between the plastic substrates and the pixel unit. The purpose of the present invention is to supply display devices which are excellent in productivity, light in weight and flexible.10-09-2008
20100105161Method for Manufacturing Thin Film Transistor - Disclosed is a method for manufacturing a thin film transistor having high resolution and high pattern accuracy with high production efficiency. Particularly disclosed is a method for manufacturing a thin film transistor wherein there is prevented deterioration of semiconductor properties in a plating step for electrode formation. This method is characterized in that a source electrode or a drain electrode is formed by such a process wherein a protective film is formed on an organic semiconductor layer, then a plating catalyst pattern is formed thereon by supplying a liquid containing a plating catalyst, and then a plating agent is brought into contact with the pattern.04-29-2010
20090317942THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR FABRICATING THE SAME - A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.12-24-2009
20090317941ORGANIC THIN FILM TRANSISTOR ARRAY SUBSTRATE AND FABRICATION METHOD THEREOF - An organic TFT array substrate and a fabricating method thereof are disclosed. In the organic TFT array substrate, a data line is disposed on a substrate and a gate line crosses the data line. A source electrode is connected to the data line. A drain electrode is disposed a predetermined distance from the source electrode. An organic semiconductor layer forms a channel between the source electrode and the drain electrode. An organic gate insulating film is disposed on the organic semiconductor layer with the same pattern as the organic semiconductor layer. A gate electrode overlies the organic semiconductor layer on the organic gate insulating film. A gate photo-resist pattern disposed on the gate electrode is used to form the gate electrode. A pixel electrode is connected to the drain electrode.12-24-2009
20080268567Method for fabricating organic light emitting display - An exemplary method for fabricating an OLED (10-30-2008
20080254568Composition and Method of Forming a Device - The present invention provides a method of forming a semiconducting device comprising an organic semiconducting material, which method comprises: heating a composition comprising the organic semiconducting material to a temperature at or above the melting point or glass transition temperature of the composition to form a melt; cooling the melt to a temperature below the melting point or glass transition temperature of the composition; and wherein a first substance or object capable of inhibiting and/or preventing dewetting is adjacent the composition before or during heating, or the composition further comprises an agent capable of inhibiting and/or preventing dewetting.10-16-2008
20110053316Organic Thin Film Transistor With Tunneling Barrier Layer and Method for Manufacturing the Same - An organic thin film transistor includes a buffer layer on a substrate, a source and drain electrodes on the buffer layer, wherein each of the source and drain electrodes is in an island shape, a tunneling barrier layer on the source and drain electrodes, an organic semiconductor layer on the tunneling barrier layer, a gate insulation layer on the organic semiconductor layer, and a gate electrode overlapping both edges of the source and drain electrodes, and formed on the gate insulation layer.03-03-2011
20110053315ORGANIC THIN FILM TRANSISTOR SUBSTRATE AND FABRICATION METHOD THEREFOR - An organic thin film transistor substrate includes a gate line formed on a substrate, a data line intersecting the gate line and defining a subpixel area, an organic thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode facing the source electrode, and an organic semiconductor layer forming a channel between the source and drain electrodes, a passivation layer parallel with the gate line, for covering the organic semiconductor layer and peripheral regions of the organic semiconductor layer, and a bank insulating layer for determining the position of the organic semiconductor layer and the passivation layer.03-03-2011
20110053314Method of Fabricating Top Gate Organic Semiconductor Transistors - The present invention provides a method of fabricating a top-gate organic semiconductor transistor comprising: providing a substrate; depositing a source and drain electrode over the substrate; depositing an organic semiconductor material in a channel between the source and drain electrode and over at least a portion of the source and drain electrodes; depositing a dielectric material over the organic semiconductor material; depositing a gate electrode over the dielectric material and organic semiconductor material in the channel; removing a portion of the dielectric material and organic semiconductor material, wherein the gate electrode acts as a mask to shield the underlying organic semiconductor material and dielectric material during the step of removing.03-03-2011
20110053313MANUFACTURING METHOD OF ORGANIC SEMICONDUCTOR DEVICE - The present invention provides a manufacturing method of an organic semiconductor device comprising a step of transferring an organic semiconductor layer to a gate insulation layer by a thermal transfer at a liquid crystal phase transition temperature of a liquid crystalline organic semiconductor material, and the step uses: an organic semiconductor layer-transferring substrate comprising a parting substrate having parting properties, and the organic semiconductor layer formed on the parting substrate and containing the liquid crystalline organic semiconductor material; and a substrate for forming an organic semiconductor device comprising a substrate, a gate electrode formed on the substrate, and the gate insulation layer formed to cover the gate electrode and having alignment properties which are capable of aligning the liquid crystalline organic semiconductor material on a surface of the gate insulation layer.03-03-2011
20120122275METHODS OF FABRICATING ORGANIC THIN FILM TRANSISTORS - Disclosed is a method for forming banks during the fabrication of electronic devices incorporating an organic semiconductor material that includes preparing an aqueous coating composition having at least a water-soluble polymer, a UV curing agent and a water-soluble fluorine compound. This coating composition is applied to a substrate, exposed using UV radiation and then developed using an aqueous developing composition to form the bank pattern. Because the coating composition can be developed using an aqueous composition rather than an organic solvent or solvent system, the method tends to preserve the integrity of other organic structures present on the substrate. Further, the incorporation of the fluorine compound in the aqueous solution provides a degree of control over the contact angles exhibited on the surface of the bank pattern and thereby can avoid or reduce subsequent surface treatments.05-17-2012
20100323473METHOD OF FORMING ORGANIC SEMICONDUCTOR LAYER AND METHOD OF MANUFACTURING ORGANIC THIN FILM TRANSISTOR - Disclosed is a method of forming an organic semiconductor layer comprising the steps of preparing a substrate having a groove formed on the surface, applying, to the surface of the substrate, a droplet of an organic semiconductor liquid in which an organic semiconductor material is dissolved or dispersed in a solvent, and drying the droplet to form the organic semiconductor layer, wherein the droplet is applied to a position of the substrate where a part of the circumference of the droplet is introduced into the groove.12-23-2010
20100330737METHOD OF DOPING ORGANIC SEMICONDUCTORS - A method includes the steps of forming a contiguous semiconducting region and heating the region. The semiconducting region includes polyaromatic molecules. The heating raises the semiconducting region to a temperature above room temperature. The heating is performed in the presence of a dopant gas and the absence of light to form a doped organic semiconducting region.12-30-2010
20100173450MATRIX TYPE DISPLAY DEVICE WITH OPTICAL MATERIAL AT PREDETERMINED POSITIONS AND MANUFACTURING METHOD THEREOF - An object of the invention is to improve patterning accuracy while maintaining low cost, high throughput and a high degree of freedom of an optical material in a matrix type display device and a manufacturing method thereof.07-08-2010
20110151615BICYCLIC GUANIDINES, METAL COMPLEXES THEREOF AND THEIR USE IN VAPOR DEPOSITION - Bicyclic guanidine compounds are described. Metal bicyclic guanidinate and its use in vapor deposition processes to deposit a metal-containing thin film are also described. Methods of making alkaline earth metal N,N′dialkylacetamidinates or bicyclic guanidinates including dissolution of alkaline earth metal into liquid ammonia followed by addition of a solution of an amidine or guanidine ligand in the free base from are provided.06-23-2011
20100022048Semiconductor device and manufacturing method therefor - The present invention relates to a manufacturing method for a semiconductor device, the method includes a process for forming an interlayer film on a substrate, a process for forming an opening in the interlayer, a process for forming a conductive layer which fills the opening, and a process for forming a cap film on the surface of the conductive layer. In the process for forming the cap film, a reduction process for the surface of the conductive layer and the forming of the film are performed simultaneously.01-28-2010
20120231577ANODE FOR AN ORGANIC ELECTRONIC DEVICE - There is provided an anode for an organic electronic device. The anode is a conducting inorganic material having an oxidized surface layer. The surface layer is non-conductive and hole-transporting.09-13-2012
20100227434Method of Fabricating a Self-aligned Top-gate Organic Transistor - A method of fabricating a self-aligned top-gate organic transistor comprises depositing a photoresist material over the dielectric material, and exposing the photoresist material to irradiation through the substrate using the source and drain electrodes as a mask. The exposure defines a region for deposition of the gate electrode.09-09-2010
20110111554MEMORY DEVICE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING MEMORY DEVICE - Objects are to solve inhibition of miniaturization of a memory element and complexity of a manufacturing process thereof, and to provide a nonvolatile memory device and a semiconductor device each having the memory device, in which data can be additionally written except at the time of manufacture and in which forgery or the like caused by rewriting of data can be prevented, and a memory device and a semiconductor device that are inexpensive and nonvolatile. The present invention provides a semiconductor device that includes a plurality of memory elements, in each of which a first conductive layer, a second conductive layer disposed beside the first conductive layer, and a mixed film that are disposed over the same insulating film. The mixed film contains an inorganic compound, an organic compound, and a halogen atom and is disposed between the first conductive layer and the second conductive layer.05-12-2011
20120003790HOLE TRANSPORT COMPOSITIONS AND RELATED DEVICES AMD METHODS (II) - A composition comprising: at least one compound comprising a hole transporting core, wherein the core is covalently bonded to a first arylamine group and also covalently bonded to a second arylamine group different from the first, and wherein the compound is covalently bonded to at least one intractability group, wherein the intractability group is covalently bonded to the hole transporting core, the first arylamine group, the second arylamine group, or a combination thereof, and wherein the compound has a molecular weight of about 5,000 g/mole or less. Blended mixtures of arylamine compounds, including fluorene core compounds, can provide good film formation and stability when coated onto hole injection layers. Solution processing of OLEDs is a particularly important application.01-05-2012
20120156829POLYMERIC SEMICONDUCTORS, DEVICES, AND RELATED METHODS - A polymer comprises a polymeric chain represented by formula (I) or (II). In formula (I), a, b, c, d, and n are integers, a from 0 to 3, b from 1 to 5, c from 1 to 3, d from 1 to 5, and n from 2 to 5000; R06-21-2012
20120064663DEVICE AND METHOD FOR DEPOSITING ORGANIC MATERIAL - A device for depositing an organic material includes a substrate; a mask having an opening portion and a shield portion; a fixing member for fixing the substrate and the mask to each other; a deposition source comprising a plurality of nozzles arranged in a first direction and configured to spray the organic material; and a plurality of shield plates near the plurality of nozzles on the deposition source. An angle θ between the substrate and a line extended from a distal end of one of the nozzles to a center of a distal end of a corresponding one of the shield plates is greater than or equal to a taper angle Φ of the shield portion of the mask.03-15-2012
20110076797METHOD FOR PRODUCING LOCALIZED PATTERNS - A method for producing at least one pattern on a top surface of a support made from a material presenting a first thermal conductivity comprises a step of arranging of a mask made from a material presenting a second thermal conductivity and comprising at least one recess having a shape corresponding to that of the pattern, in contact with a bottom surface of the support, the ratio of the first conductivity over the second conductivity being greater than or equal to 2, or smaller than or equal to ½, throughout the duration of the method. The method further comprises a step of depositing on the top surface a solution comprising a material designed to form the pattern, and a step of evaporating the solution.03-31-2011
20110092015Mixed Solvent Systems for Deposition of Organic Semiconductors - Compositions that contain an organic semiconductor dissolved in a solvent mixture are described. More specifically, the solvent mixture includes an alkane having 9 to 16 carbon atoms in an amount equal to 1 to 20 weight percent and an aromatic compound in an amount equal to 80 to 99 weight percent. The semiconductor material is dissolved in the solvent mixture in an amount equal to at least 0.1 weight percent based on a total weight of the composition. Methods of making a semiconductor device using the compositions to form a semiconductor layer are also described.04-21-2011
20110065233Method for fabricating and repairing organic thin film - The present invention relates to a method for fabricating an organic thin film transistor, including: (A) providing a gate electrode; (B) forming a gate insulating layer on the gate electrode; and (C) forming an organic active layer, a source electrode and a drain electrode over the gate insulating layer, and increasing crystallinity of the organic active layer by irradiating the organic active layer. Accordingly, through irradiation, the present invention can efficiently enhance the field effect mobility, and thereby significantly improves the device performance of an organic thin film transistor. Additionally, irradiation mentioned in the present invention also can be used for repairing an organic thin film transistor.03-17-2011
20110065232PRINTING PROCESS FOR ENHANCED JETTED PERFORMANCE OF SEMICONDUCTOR LAYER - Exemplary embodiments provide materials and processes for forming organic semiconductor features by heating a liquid composition containing semiconductor particles into a Newtonian solution for a uniform deposition.03-17-2011
20120122274ANISOTROPIC SEMICONDUCTOR FILM AND METHOD OF PRODUCTION THEREOF - The present invention relates generally to the field of macro- and microelectronics with the potential for large-scale integration, optics, communications, and computer technology and particularly to the materials for these and other related fields. The present invention provides an anisotropic semiconductor film on a substrate, comprising at least one solid layer of material that comprises predominantly planar graphene-like carbon-based structures and possesses anisotropy of conductivity, and wherein the layer thickness is in a range from approximately 5 nm to 1000 nm.05-17-2012
20120129296METHOD FOR FORMING AN ORGANIC MATERIAL LAYER ON A SUBSTRATE - A method for forming an organic material layer on a substrate in an in-line deposition system is disclosed. In one aspect, the organic material is deposited with a predetermined non-constant deposition rate profile, which includes a first predetermined deposition rate range provided to deposit at least a first monolayer of the organic material layer with a first predetermined average deposition rate and a second predetermined deposition rate range provided to deposit at least a second monolayer of the organic material layer with a second predetermined average deposition rate. The injection of organic material through the openings of the injector is controlled for realizing the predetermined deposition rate profile.05-24-2012
20100210067MIGRATION AND PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION - A method of producing a thin film using plasma enhanced chemical vapor deposition, including the steps of supplying a cation species to a substrate region when there is at most a relatively low flux of a plasma based anion species in the substrate region, and supplying the plasma based anion species to the substrate region when there is at most a relatively low flux of the cation species in the substrate region. This enables delivery of gaseous reactants to be separated in time in PECVD and/or RPECVD based film growth systems, which provides a significant reduction in the formation of dust particles for these plasma based film growth techniques.08-19-2010
20120135562METHODS OF FORMING HYDROPHOBIC SILICON DIOXIDE LAYER AND FORMING ORGANIC THIN FILM TRANSISTOR - A method of forming a hydrophobic silicon dioxide layer is provided. A substrate is provided. Thereafter, a hydrophobic silicon dioxide layer is formed on the substrate by using a plasma chemical vapour deposition (CVD) system, in which tetraethyl orthosilicate (TEOS) and an oxygen-containing gas are introduced at a reactive temperature between 25° C. and 150° C. A method of forming an organic thin film transistor (OTFT) including the hydrophobic silicon dioxide layer as a gate insulating layer is also provided. In the present invention, the hydrophobic silicon dioxide layer can be directly formed at low temperature without using the conventional surface modification treatment. Accordingly, the process is simplified and the cost is reduced.05-31-2012
20100173451ORGANIC THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - The present invention provides an organic thin film transistor substrate and a method of manufacturing the same capable of uniformly forming the thickness of a gate insulating layer and a protective layer and preventing overflow of an organic semiconductive layer.07-08-2010
20090111210Method for Organic Semiconductor Material Thin-Film Formation and Process for Producing Organic Thin Film Transistor - A method for the formation of an organic semiconductor material film having improved mobility on a substrate, and a process for producing an organic thin film transistor which can develop high performance by utilizing the method. The production process of an organic thin film transistor utilizes the method for organic semiconductor material film formation, comprising coating an organic semiconductor material-containing liquid onto a surface of a substrate to form a semiconductor material thin film. The method for organic semiconductor material thin film formation is characterized in that, when the surface free energy of the surface of the substrate is γ04-30-2009
20120077308ORGANIC SEMICONDUCTOR COMPOSITIONS INCLUDING PLASTICIZERS - A method includes combining organic semiconductor molecules and plasticizer molecules to form over a substrate a solid organic semiconductor channel. The channel may comprise at least about 50% by weight of the plasticizer molecules.03-29-2012
20120220075Solution-Processed Organic Electronic Structural Element with Improved Electrode Layer - A solution-processed organic electronic structural element has an improved electrode layer. Located between the active organic layer and the electrode layer there is either an interface or an interlayer containing a cesium salt.08-30-2012
20090061558METHOD OF FABRICATING ORGANIC ELECTRONIC DEVICE - A fabricating method of organic electronic device is provided. The method comprises: providing a flexible substrate; fabricating a plurality of organic elements on the flexible substrate; depositing a patterned spacing layer on the flexible substrate with a spacing material deposition source and a mask; and arranging a cover substrate on the patterned spacing layer, and sealing the edges of the flexible substrate and the cover substrate with a sealant, wherein the patterned spacing layer is used to maintain a space between the flexible substrate and the cover substrate.03-05-2009
20120083070CHARGE INJECTION AND TRANSPORT LAYERS - Compositions for use in hole transporting layers (HTLs) or hole injection layers (HILs) are provided, as well as methods of making the compositions and devices fabricated from the compositions. OLED devices can be made. The compositions comprise at least one conductive conjugated polymer, at least one semiconducting matrix component that is different from the conductive conjugated polymer, and an optional dopant, and are substantially free of an insulating matrix component.04-05-2012
20120231578FABRICATING METHOD OF ORGANIC THIN FILM TRANSISTOR HAVING A HYDROPHOBIC LAYER - A fabricating method of an organic thin film transistor having a hydrophobic layer is provided. The organic thin film transistor including a gate, a gate insulator covering the gate, a source, a drain, an organic semiconductor layer, a hydrophobic layer and a protecting droplet. A hydrophobic region is formed by forming the hydrophobic layer on a surface of the source and a surface of the drain, respectively. Meanwhile, a hydrophilic region is formed on the organic semiconductor layer exposed by the hydrophobic layer. The protecting droplet is self-assemblingly formed on the organic semiconductor layer to protect the device characteristic by using the surface tension thereof.09-13-2012
20100233846METHOD FOR FORMING SEMICONDUCTOR THIN FILM AND METHOD FOR MANUFACTURING THIN-FILM SEMICONDUCTOR DEVICE - The present invention provides a method for forming a semiconductor thin film, which is capable of suppressing decrease in mobility due to heating and characteristic deterioration due to the decrease in mobility and which is capable of forming a semiconductor thin film with improved heat resistance by more simple procedures. A solution in which a plurality of types of organic materials including an organic semiconductor material are mixed is applied or printed on a substrate to form a thin film, and the plurality of types of organic materials are phase-separated by a process of drying the thin film. As a result, a layered structure semiconductor thin film is obtained, in which an intermediate layer b composed of an organic insulating material is sandwiched between two semiconductor layers a and a′.09-16-2010
20100233844Method for Preparing Doped Organic Semiconductor Materials and Formulation Utilized Therein - The present invention relates to a method for preparing doped organic semiconductor materials09-16-2010
20120276687NICKEL COMPLEXES FOR FLEXIBLE TRANSISTORS AND INVERTERS - The design and synthesis of six nickel charge transfer (CT) complexes are described herein. The six nickel CT complexes have a nickel center, two organic ligands coordinated with the nickel center to form a dianionic square planar supramolecule and an organic counter-cation. The ligands and counter-cations are selected to optimize properties, such as molecular alignment, film morphology, and molecular packaging. Described herein, the ligands can be 2,3-pyrazinedithiol (L11-01-2012
20080241990METHOD FOR MANUFACTURING ORGANIC THIN FILM TRANSISTOR SUBSTRATE - A method for manufacturing an organic thin film transistor substrate comprising forming a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, defining a channel region on the gate insulating layer between a source electrode and a drain electrode, neutralizing the channel region, forming a bank insulating layer on the source electrode and the drain electrode, and forming an organic semiconductor layer in a region prepared by the bank insulating layer.10-02-2008
20100087032METHOD FOR PATTERNING OF ORGANIC FILM - A main subject is to provide a novel method for patterning of organic film which is suitable for manufacturing various organic devices.04-08-2010
20080220562Structure And Fabrication Of Self-Aligned High-Performance Organic FETs - A low channel length organic field-effect transistor can be produced in high volume and at low cost. The transistor structure includes successively deposited patterned layers of a first conductor layer acting as a source terminal, a first dielectric layer, a second conductor layer acting as a drain terminal, a semiconductor layer, a second dielectric layer, and a third conductor layer acting as the gate terminal. In this structure, the transistor is formed on the edge of the first dielectric between the first conductor layer and the second conductor layer. The second conductor layer is deposited on the raised surfaces formed by the dielectric such that conductive ink does not flow into the trough between the dielectric raised surfaces. This is accomplished by coating a flat or rotary print plate with the conductive ink, and applying the appropriate pressure to deposit the materials only on the raised surfaces of the dielectric. The second metal is automatically aligned to the layer beneath it. Due to this self-alignment and the short channel formed by the thickness of the dielectric material, a high-performance FET is produced without the requirement of high-resolution lithography equipment.09-11-2008
20080220561MELT-BASED PATTERNING FOR ELECTRONIC DEVICES - The present invention provides methods and apparatus for melt-based patterning for electronic devices. It employs and provides processes and apparatus for fabricating an electronic device having a pattern formed on a surface by a deposition material. Further, the invention a process for fabricating semiconductors, organic light-emitting devices (OLEDs), field-effect transistors, and in particular high-resolution patterning for RGB displays. A process for fabricating an organic electronic device includes the steps of heating and applying a pressure to the deposition material to form a melt, and depositing the melted deposition material on the surface with a phase-change printing technique or a spray technique. The melted deposition material solidifies on the surface.09-11-2008
20130149812LOW CONTACT RESISTANCE ORGANIC THIN FILM TRANSISTORS - The invention provides the use of a solvent selected from the group consisting of alkoxybenzenes and alkyl substituted alkoxybenzenes in reducing the contact resistance in an organic thin film transistor comprising a semiconductor layer comprising a blend of a small molecule semiconductor material and a polymer material that is deposited from a solution of said small molecule semiconductor material and said polymer material in said solvent and novel semiconductor blend formulations that are of particular use in preparing organic thin film transistors. Said solvents yield devices with lower absolute contact resistance, lower absolute channel resistance, and lower proportion of contact resistance to the total channel resistance.06-13-2013
20130149811METHOD FOR MANUFACTURING ORGANIC SEMICONDUCTOR THIN FILM AND MONOCRYASTALLINE ORGANIC SEMICONDUCTOR THIN FILM - The first object of the present invention is to provide a method for manufacturing a uniform organic semiconductor thin film consisting of single organic molecule with extremely few pinholes and of which both quality and thickness are uniform when the organic semiconductor thin film is manufactured by printing process. The second object of the present invention is to manufacture a monocrystalline organic semiconductor of which almost the entire region consists of a single monocrystal, by printing process.06-13-2013
20120258569SELECTIVE NANOTUBE FORMATION AND RELATED DEVICES - Nanotube electronic devices exhibit selective affinity to disparate nanotube types. According to an example embodiment, a semiconductor device exhibits a treated substrate that selectively interacts (e.g., chemically) with nanotubes of a first type, relative to nanotubes of a second type, the respective types including semiconducting-type and metallic-type nanotubes. The selective interaction is used to set device configuration characteristics based upon the nanotube type. This selective-interaction approach can be used to set the type, and/or characteristics of nanotubes in the device.10-11-2012
20130122648REDUCTION OF THE EFFECTS OF CAP-LIKE PROJECTIONS, DUE TO LASER ABLATION OF A METAL LEVEL BY USING A NON-CROSSLINKED LIGHT OR HEAT-CROSSLINKABLE POLYMER LAYER - A laser-crosslinkable material appearing in non-crosslinked or partially crosslinked form is used to protect, during a laser etching, the electrodes of an organic transistor.05-16-2013
20110312125METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device is provided. The method includes the steps of: (1) coating a solution containing an organic semiconductor material on a water-repellent surface of a water-repellent stamp substrate; (2) drying the thus coated organic semiconductor material-containing solution on the water-repellent surface to crystallize the organic semiconductor material in contact with the water-repellent surface, thereby forming a semiconductor layer; (3) thermally treating the semiconductor layer formed on the stamp substrate; and (4) pressing the stamp substrate at a side, in which the thermally treated organic semiconductor layer is formed, against a surface of a substrate to be transferred so that the organic semiconductor layer is transferred to the surface of the substrate to be transferred.12-22-2011
20120034735Photosensitive compositions useful for forming active patterns, methods of forming such active patterns and organic memory devices incorporating such active patterns - Example embodiments herein relate to compositions useful in forming organic active patterns that may, in turn, be incorporated in organic memory devices. The compositions comprise N-containing conjugated electroconductive polymer(s), photoacid generator(s) and organic solvent(s) capable of dissolving suitable quantities of both the electroconductive polymer and the photoacid generator. Also disclosed are methods for patterning organic active layers formed using one or more of the compositions to produce organic active patterns, portions of which may be arranged between opposed electrodes to provide organic memory cells. The methods include directly exposing and developing the organic active layer to obtain fine patterns without the use of a separate masking pattern, for example, a photoresist pattern, thereby tending to simplify the fabrication process and reduce the associated costs.02-09-2012
20130210192Semiconductor Component - The invention concerns a semiconductor component with a layered arrangement with an electrode, an organic semiconductor layer, an injection layer, and an additive layer, which consists of an additive, which on contact with the molecular doping material modifies its doping affinity with respect to the organic material of the organic semiconductor layer, wherein in the injection layer a layered region is formed with a first doping affinity of the molecular doping material with respect to the organic material and a further layered region is formed with a second, in comparison to the first doping affinity smaller, doping affinity of the molecular doping material with respect to the organic material. Furthermore the invention concerns a method for the manufacture of a semiconductor component and also the application of a semiconductor component.08-15-2013

Patent applications in class HAVING ORGANIC SEMICONDUCTIVE COMPONENT