Entries |
Document | Title | Date |
20080220560 | Programmable resistance memory element and method for making same - A programmable resistance memory element. The active volume of memory material is made small by the presence of a small area of contact between the conductive material and the memory material. The area of contact is created by forming a region of conductive material and an intersecting sidewall layer of the memory material. The region of conductive material is preferably a sidewall layer of conductive material. | 09-11-2008 |
20080280390 | METHOD OF FABRICATING SEMICONDUCTOR MEMORY DEVICE HAVING SELF-ALIGNED ELECTRODE, RELATED DEVICE AND ELECTRONIC SYSTEM HAVING THE SAME - A method of fabricating a semiconductor memory device having a self-aligned electrode is provided. An interlayer insulating layer having a contact hole is formed on a substrate. A phase change pattern partially filling the contact hole is formed. A bit line which includes a bit extension self-aligned to the phase change pattern and crosses over the interlayer insulating layer is formed. The bit extension may extend in the contact hole on the phase change pattern. The bit extension contacts the phase change pattern. | 11-13-2008 |
20080299699 | Methods of Forming A Resistance Variable Element - The invention includes methods of depositing silver onto a metal selenide-comprising surface, and methods of forming a resistance variable device. In one implementation, a method of depositing silver onto a metal selenide-comprising surface includes providing a deposition chamber comprising a sputtering target and a substrate to be depositing upon. The target comprises silver, and the substrate comprises an exposed surface comprising metal selenide. Gaseous cesium is flowed to the target and a bombarding inert sputtering species is flowed to the target effective to sputter negative silver ions from the target. The sputtered negative silver ions are flowed to the exposed metal selenide-comprising surface effective to deposit a continuous and completely covering silver film on the exposed metal selenide of the substrate. | 12-04-2008 |
20090117684 | METHOD AND APPARATUS FOR FORMING COPPER INDIUM GALLIUM CHALCOGENIDE LAYERS - A multilayer structure to form absorber layers for solar cells. The multilayer structure includes a base comprising a contact layer on a substrate layer, a first layer on the contact layer, and a metallic layer on the first layer. The first layer includes an indium-gallium-selenide film and the gallium to indium molar ratio of the indium-gallium-selenide film is in the range of 0 to 0.8. The metallic layer includes gallium and indium without selenium. Additional selenium is deposited onto the metallic layer before annealing the structure for forming an absorber. | 05-07-2009 |
20090137080 | PHASE CHANGE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A phase change memory device reduces the current necessary to cause a phase change of a phase change layer. The phase change memory device includes a first oxide layer formed on a semiconductor substrate; a lower electrode formed inside the first oxide layer; a second oxide layer formed on the first oxide layer including the lower electrode, the second oxide having a hole for exposing a part of the lower electrode; a phase change layer formed on a surface of the hole with a uniform thickness so as to make contact with the lower electrode; and an upper electrode formed in the hole and on a part of the second oxide layer, the part being adjacent to the hole. | 05-28-2009 |
20090162969 | METHOD AND APPARATUS TO FORM SOLAR CELL ABSORBER LAYERS WITH PLANAR SURFACE - A method and a system are provided for forming planar absorber layers or structures by planarizing and reacting precursor layers in a reactor. A precursor structure is first formed over the front surface of a foil substrate and then planarized through application of pressure by a smooth surface while heated to a first temperature range to obtain a planar layer. The planar layer may be only partially reacted. The planar layer is further reacted at a second temperature range to form a fully or completely reacted planar absorber layer. The planar absorber layer may include at least one Group IB material, at least one Group IIIA material and at least one Group VIA material. The planar absorber layer may be a Group IBIIIAVIA compound layer. | 06-25-2009 |
20090176329 | Phase-change memory device and method of manufacturing the same - In a method of forming a phase-change memory device, a variable resistance member may be formed on a s semiconductor substrate having a contact region, and a first electrode may be formed to contact a first portion of the variable resistance member and to be electrically connected to the contact region. A second electrode may be formed so as to contact a second portion of the variable resistance member. | 07-09-2009 |
20090203165 | METHOD TO IMPROVE FLEXIBLE FOIL SUBSTRATE FOR THIN FILM SOLAR CELL APPLICATIONS - A thin film solar cell including a Group IBIIIAVIA absorber layer on a defect free base including a stainless steel substrate is provided. The stainless steel substrate of the base is surface treated to remove the surface roughness such as protrusions that cause shunts. Before removing the protrusions, a thin protective ruthenium film is first deposited on the recessed surface portions of the substrate to protect these portions during the following protrusion removal. The protrusions on the surface receives very little or no ruthenium during the deposition. After the ruthenium film is formed, the protrusions are etched and removed by an etchant which only attacks the stainless steel but neutral to the ruthenium film. A contact layer is formed over the ruthenium layer and the exposed portions of the substrate to complete the base. | 08-13-2009 |
20090233398 | METHODS FOR FORMING PARTICLES FROM SINGLE SOURCE PRECURSORS, METHODS OF FORMING SEMICONDUCTOR DEVICES, AND DEVICES FORMED USING SUCH METHODS - Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode. | 09-17-2009 |
20090233399 | METHOD OF MANUFACTURING PHOTOELECTRIC DEVICE - In a method of manufacturing a photoelectric device, a transparent conductive layer is formed on a substrate, and the transparent conductive layer is partially etched using an etching solution including hydrofluoric acid. Thus, a transparent electrode having a concavo-convex pattern on its surface is formed. When the transparent conductive layer is partially etched, a haze of the transparent electrode may be controlled by adjusting an etching time of the transparent conductive layer. Also, since the etching solution is sprayed to the transparent conductive layer to etch the transparent conductive layer, the concavo-convex pattern on the surface of the transparent electrode may be easily formed even though the size of the substrate increases. | 09-17-2009 |
20090246908 | ROLL-TO-ROLL PROCESSING METHOD AND TOOLS FOR ELECTROLESS DEPOSITION OF THIN LAYERS - A deposition method and a system are provided to deposit a CdS buffer layer on a surface of a solar cell absorber layer of a flexible workpiece from a process solution including all chemical components of the CdS buffer layer material. CdS is deposited from the deposition solution while the flexible workpiece is heated and elastically shaped by a heated shaping plate to retain the process solution on the solar cell absorber layer. The flexible workpiece is elastically shaped by pulling a back surface of the flexible workpiece into a cavity area in the heated shaping plate using an attractive force. | 10-01-2009 |
20090258457 | BUFFER LAYER DEPOSITION FOR THIN-FILM SOLAR CELLS - Improved methods and apparatus for forming thin-film buffer layers of chalcogenide on a substrate web. Solutions containing the reactants for the buffer layer or layers may be dispensed separately to the substrate web, rather than being mixed prior to their application. The web and/or the dispensed solutions may be heated by a plurality of heating elements. | 10-15-2009 |
20100015755 | MANUFACTURING METHOD OF SEMICONDUCTOR MEMORY DEVICE - In a step of forming an InGeSbTe film which contains GeSbTe made of germanium (Ge), antimony (Sb) and tellurium (Te) as its base material and to which indium (In) is added, an InGeSbTe film is formed by sputtering on a semiconductor substrate while keeping a temperature of the semiconductor substrate between an in-situ crystallization temperature of GeSbTe serving as the base material and an in-situ crystallization temperature of InGeSbTe. As a result, it is possible to suppress the failure that the phase separation occurs in the InGeSbTe film during the following manufacturing process. | 01-21-2010 |
20100081230 | METHOD AND STRUCTURE FOR ADHESION OF ABSORBER MATERIAL FOR THIN FILM PHOTOVOLTAIC CELL - A method for forming a thin film photovoltaic device includes providing a transparent substrate comprising a surface region and forming a first electrode layer overlying the surface region. The method further includes forming a thin layer of copper gallium material overlying the first electrode layer to act as an intermediary adhesive layer to facilitate attachment to the first electrode layer. Additionally, the method includes forming a copper layer overlying the thin layer and forming an indium layer overlying the copper layer to form a multilayered structure and subjecting the multilayered structure to thermal treatment process with sulfur bearing species to form a copper indium disulfide alloy material. The copper indium disulfide alloy material comprises a copper:indium atomic ratio of about 1.2:1 to about 3.0:1 overlying a copper gallium disulfide material converted from the thin layer. Furthermore, the method includes forming a window layer overlying the copper indium disulfide alloy material. | 04-01-2010 |
20100129957 | THIN-FILM PHOTOVOLTAIC DEVICES - A method is provided for producing a thin-film photovoltaic device. The method includes forming on a substrate a first thin-film absorber layer using a first deposition process. A second thin-film absorber layer is formed on the first thin-film absorber layer using a second deposition process different from the first deposition process. The first and second thin-film absorber layers are each photovoltaically active regions and the second thin-film absorber layer has a smaller concentration of defects than the first thin-film absorber layer. | 05-27-2010 |
20100210064 | METHOD FOR MANUFACTURING CIS-BASED THIN FILM SOLAR CELL - In order to manufacture a CIS-based thin film solar cell that can achieve high photoelectric conversion efficiency by adding an alkali element to a light absorbing layer easily and with good controllability, a backside electrode layer ( | 08-19-2010 |
20100210065 | METHOD OF MANUFACTURING SOLAR CELL - A method of manufacturing a solar cell is provided, which can enhance the carrier concentration, so as to increase the open-circuit voltage, short-circuit current, and fill factor (F.F.), thereby raising the conversion efficiency. The method of manufacturing a solar cell in accordance with the present invention comprises a sputtering step of forming a layer containing Ib and IIIb group elements and Se on a substrate by sputtering with a target containing a Ib group element and a target containing a IIIb group element in an atmosphere containing Se; and a heat treatment step of heating the layer. | 08-19-2010 |
20100248419 | SOLAR CELL ABSORBER LAYER FORMED FROM EQUILIBRIUM PRECURSOR(S) - Methods and devices are provided for forming an absorber layer. In one embodiment, a method is provided comprising of depositing a solution on a substrate to form a precursor layer. The solution comprises of at least one equilibrium and/or near equilibrium material. The precursor layer is processed in one or more steps to form a photovoltaic absorber layer. In one embodiment, the absorber layer may be created by processing the precursor layer into a solid film and then thermally reacting the solid film in an atmosphere containing at least an element of Group VIA of the Periodic Table to form the photovoltaic absorber layer. Optionally, the absorber layer may be processed by thermal reaction of the precursor layer in an atmosphere containing at least an element of Group VIA of the Periodic Table to form the photovoltaic absorber layer. | 09-30-2010 |
20100248420 | METHOD FOR FORMING AN ABSORBER LAYER OF A THIN FILM SOLAR CELL - In a method for forming a light absorber layer ( | 09-30-2010 |
20100267189 | SOLUTION-BASED FABRICATION OF PHOTOVOLTAIC CELL - An ink for forming CIGS photovoltaic cell active layers is disclosed along with methods for making the ink, methods for making the active layers and a solar cell made with the active layer. The ink contains a mixture of nanoparticles of elements of groups IB, IIIA and (optionally) VIA. The particles are in a desired particle size range of between about 1 nm and about 500 nm in diameter, where a majority of the mass of the particles comprises particles ranging in size from no more than about 40% above or below an average particle size or, if the average particle size is less than about 5 nanometers, from no more than about 2 nanometers above or below the average particle size. The use of such ink avoids the need to expose the material to an H | 10-21-2010 |
20100267190 | LAMINATED STRUCTURE FOR CIS BASED SOLAR CELL, AND INTEGRATED STRUCTURE AND MANUFACTURING METHOD FOR CIS BASED THIN-FILM SOLAR CELL - This invention aims to provide a laminated structure and an integrated structure of a high production efficiency for a CIS based thin-film solar cell, which can produce a high-resistance buffer layer of the CIS based thin-film solar cell efficiently on a series of production lines and which needs no treatment of wastes or the like, and a manufacturing method for the structures. The CIS based thin-film solar cell includes a back electrode, a p-type CIS based light absorbing layer, a high-resistance buffer layer and an n-type transparent conductive film laminated in this order. The high-resistance buffer layer and the n-type transparent conductive film are formed of thin films of a zinc oxide group. The buffer layer contacts the p-type CIS based light absorbing layer directly, and has a resistivity of 500 Ω·cm or higher. | 10-21-2010 |
20100267191 | PLASMA ENHANCED THERMAL EVAPORATOR - The present invention generally provides a method for forming a photovoltaic device including evaporating a source material to form a large molecule processing gas and flowing the large molecule processing gas through a gas distribution showerhead and into a processing area of a processing chamber having a substrate therein. The method includes generating a small molecule processing gas, and reacting the small molecule processing gas with a film already deposited on a substrate surface to form a semiconductor film. Additionally, apparatuses that may use the methods are also provided to enable continuous inline CIGS type solar cell formation. | 10-21-2010 |
20100311202 | PROCESS FOR PRODUCING LIGHT ABSORBING LAYER IN CIS BASED THIN-FILM SOLAR CELL - A treatment object containing any one of Cu/Ga, Cu/In and Cu—Ga/In is held in a heated state at a temperature T | 12-09-2010 |
20100317144 | TECHNIQUE AND APPARATUS FOR DEPOSITING LAYERS OF SEMICONDUCTORS FOR SOLAR CELL AND MODULE FABRICATION - The present invention advantageously provides for, in different embodiments, low-cost deposition techniques to form high-quality, dense, well-adhering Group IBIIIAVIA compound thin films with macro-scale as well as micro-scale compositional uniformities. It also provides methods to monolithically integrate solar cells made on such compound thin films to form modules. In one embodiment, there is provided a method of growing a Group IBIIIAVIA semiconductor layer on a base, and includes the steps of depositing on the base a nucleation and/or a seed layer and electroplating over the nucleation and/or the seed layer a precursor film comprising a Group IB material and at least one Group IIIA material, and reacting the electroplated precursor film with a Group VIA material. Other embodiments are also described. | 12-16-2010 |
20110008927 | METHOD FOR PREPARING LIGHT ABSORPTION LAYER OF COPPER-INDIUM-GALLIUM-SULFUR-SELENIUM THIN FILM SOLAR CELLS - A preparation method of the light absorption layer of a copper-indium-gallium-sulfur-selenium film solar cell is provided. The method employs a non-vacuum liquid-phase chemical technique, which comprises following steps: forming source solution containing copper, indium, gallium, sulfur and selenium; using the solution to form a precursor film on a substrate by a non-vacuum liquid-phase process; drying and annealing the precursor film. Thus, a compound film of copper-indium-gallium-sulfur-selenium is gained. | 01-13-2011 |
20110059574 | COATING APPARATUS AND COATING METHOD - A coating apparatus including a coating part which applies a liquid material including an oxidizable metal on a substrate; a chamber having a coating section in which the coating part applies the liquid material on the substrate and a transport section into which the liquid material is transported; an adjusting part which adjusts at least one of oxygen concentration and humidity inside the chamber; and a control part which stops an operation of the coating part in response to the entrance of foreign object into the chamber. | 03-10-2011 |
20110070682 | THERMAL MANAGEMENT AND METHOD FOR LARGE SCALE PROCESSING OF CIS AND/OR CIGS BASED THIN FILMS OVERLYING GLASS SUBSTRATES - The thermal management and method for large scale processing of CIS and/or CIGS based thin film overlaying glass substrates. According to an embodiment, the present invention provides a method for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure. The method also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5. The method further includes introducing a gaseous species including a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350° C. to about 450° C. to at least initiate formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates. | 03-24-2011 |
20110070683 | THERMAL MANAGEMENT AND METHOD FOR LARGE SCALE PROCESSING OF CIS AND/OR CIGS BASED THIN FILMS OVERLYING GLASS SUBSTRATES - The thermal management and method for large scale processing of CIS and/or CIGS based thin film overlaying glass substrates. According to an embodiment, the present invention provides a method for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure. The method also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5. The method further includes introducing a gaseous species including a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350° C. to about 450° C. to at least initiate formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates. | 03-24-2011 |
20110070684 | THERMAL MANAGEMENT AND METHOD FOR LARGE SCALE PROCESSING OF CIS AND/OR CIGS BASED THIN FILMS OVERLYING GLASS SUBSTRATES - The thermal management and method for large scale processing of CIS and/or CIGS based thin film overlaying glass substrates. According to an embodiment, the present invention provides a method for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure. The method also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5. The method further includes introducing a gaseous species including a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350° C. to about 450° C. to at least initiate formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates. | 03-24-2011 |
20110070685 | THERMAL MANAGEMENT AND METHOD FOR LARGE SCALE PROCESSING OF CIS AND/OR CIGS BASED THIN FILMS OVERLYING GLASS SUBSTRATES - The thermal management and method for large scale processing of CIS and/or CIGS based thin film overlaying glass substrates. According to an embodiment, the present invention provides a method for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure. The method also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5. The method further includes introducing a gaseous species including a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350° C. to about 450° C. to at least initiate formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates. | 03-24-2011 |
20110070686 | THERMAL MANAGEMENT AND METHOD FOR LARGE SCALE PROCESSING OF CIS AND/OR CIGS BASED THIN FILMS OVERLYING GLASS SUBSTRATES - The thermal management and method for large scale processing of CIS and/or CIGS based thin film overlaying glass substrates. According to an embodiment, the present invention provides a method for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure. The method also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5. The method further includes introducing a gaseous species including a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350° C. to about 450° C. to at least initiate formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates. | 03-24-2011 |
20110070687 | THERMAL MANAGEMENT AND METHOD FOR LARGE SCALE PROCESSING OF CIS AND/OR CIGS BASED THIN FILMS OVERLYING GLASS SUBSTRATES - The thermal management and method for large scale processing of CIS and/or CIGS based thin film overlaying glass substrates. According to an embodiment, the present invention provides a method for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure. The method also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5. The method further includes introducing a gaseous species including a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350° C. to about 450° C. to at least initiate formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates. | 03-24-2011 |
20110070688 | THERMAL MANAGEMENT AND METHOD FOR LARGE SCALE PROCESSING OF CIS AND/OR CIGS BASED THIN FILMS OVERLYING GLASS SUBSTRATES - The thermal management and method for large scale processing of CIS and/or CIGS based thin film overlaying glass substrates. According to an embodiment, the present invention provides a method for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure. The method also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5. The method further includes introducing a gaseous species including a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350° C. to about 450° C. to at least initiate formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates. | 03-24-2011 |
20110070689 | THERMAL MANAGEMENT AND METHOD FOR LARGE SCALE PROCESSING OF CIS AND/OR CIGS BASED THIN FILMS OVERLYING GLASS SUBSTRATES - The thermal management and method for large scale processing of CIS and/or CIGS based thin film overlaying glass substrates. According to an embodiment, the present invention provides a method for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure. The method also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5. The method further includes introducing a gaseous species including a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350° C. to about 450° C. to at least initiate formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates. | 03-24-2011 |
20110081744 | BUFFER LAYER AND MANUFACTURING METHOD THEREOF, REACTION SOLUTION, PHOTOELECTRIC CONVERSION DEVICE, AND SOLAR CELL - A buffer layer manufacturing method, including the steps of forming a fine particle layer of ZnS, Zn(S, O), and/or Zn(S, O, OH), mixing an aqueous solution (I) which includes a component (Z), an aqueous solution (II) which includes a component (S), and an aqueous solution (III) which includes a component (C) to obtain a mixed solution and mixing an aqueous solution (IV) which includes a component (N) in the mixed solution to prepare a reaction solution in which the concentration of the component (C) is 0.001 to 0.25M, concentration of the component (N) is 0.41 to 1.0M, and the pH before the start of reaction is 9.0 to 12.0, and, using the reaction solution, forming a Zn compound layer of Zn(S, O) and/or Zn(S, O, OH) on the fine particle layer by a liquid phase method with a reaction temperature of 70 to 95° C. | 04-07-2011 |
20110086465 | CIGS SOLAR CELL STRUCTURE AND METHOD FOR FABRICATING THE SAME - A copper/indium/gallium/selenium (CIGS) solar cell structure and a method for fabricating the same are provided. The CIGS solar cell structure includes a substrate, a molybdenum thin film layer, an alloy thin film layer, and a CIGS thin film layer. According to the present invention, the alloy thin film layer is provided between the molybdenum thin film layer and the CIGS thin film layer, serving as a conductive layer of the CIGS solar cell structure. The alloy thin film layer is composed of a variety of high electrically conductive materials (such as molybdenum, copper, aluminum, and silver) in different proportions. | 04-14-2011 |
20110117692 | CIGS SOLAR CELL HAVING THERMAL EXPANSION BUFFER LAYER AND METHOD FOR FABRICATING THE SAME - A copper/indium/gallium/selenium (CIGS) solar cell including a thermal expansion buffer layer, and a method for fabricating the same are provided. The thermal expansion buffer layer is configured between an alloy thin film layer and a CIGS thin film layer. The thermal expansion buffer layer is deposited by executing a thin film deposition process with a continuous sputtering machine bombarding a cuprous sulphide (Cu | 05-19-2011 |
20110124149 | METHOD AND DEVICE FOR COATING A CARRIER FOR THIN-FILM SOLAR CELLS | 05-26-2011 |
20110124150 | Chalcogenide Absorber Layers for Photovoltaic Applications and Methods of Manufacturing the Same - In one example embodiment, a method includes depositing one or more thin-film layers onto a substrate. More particularly, at least one of the thin-film layers comprises at least one electropositive material and at least one of the thin-film layers comprises at least one chalcogen material suitable for forming a chalcogenide material with the electropositive material. The method further includes annealing the one or more deposited thin-film layers at an average heating rate of or exceeding 1 degree Celsius per second. The method may also include cooling the annealed one or more thin-film layers at an average cooling rate of or exceeding 0.1 degrees Celsius per second. | 05-26-2011 |
20110129958 | METHOD AND APPARATUS FOR SCRIBING A LINE IN A THIN FILM USING A SERIES OF LASER PULSES - A series of laser pulses in a pulse train, each pulse with a predetermined temporal power shape, scribes a line in a thin film of material on a substrate. The predetermined temporal pulse shape has a fast risetime and fast falltime and a pulse length between 10% power points of less than 10 ns. Scribing a line in the thin film is achieved by placing the series of laser pulse spots on the line to be scribed such that there is some overlapping area between adjacent laser pulse spots along the line. The use of a series of laser pulses with the predetermined pulse shape to scribe a line in the thin film results in a better quality and cleaner scribing process compared to that achieved with a conventional pulse shape. | 06-02-2011 |
20110183461 | PROCESS DEVICE FOR PROCESSING IN PARTICULAR STACKED PROESSED GOODS - The invention relates to a processing device for the processing of in particular stacked proceed goods, particularly in the form of planar substrates for the production of thin layers, particularly of conducting, semiconducting, or insulating thin layers, comprising an evacuatable processing chamber for receiving a process gas, comprising at least one tempering device, particularly at least in sections in and/or in thermal operative connection with at least one wall, particularly all walls of the processing chamber, said chamber being equipped and suited to keep at least a partial region of the wall, particularly substantially the entire process chamber wall, of the process chamber at a predetermined temperature, particularly to keep the same at a first temperature during at least part of the processing of the stacked processed goods, said temperature not being below room temperature as the second temperature, and being below a third temperature which can be generated in the processing chamber and is above room temperature; at least one gas conveying device for creating a gas flow cycle in the process chamber, particularly a forced convection; at least one heating device for heating the gas, said heating device disposed or able to be disposed in the gas flow cycle created by the gas conveying device; at least one gas guiding device, | 07-28-2011 |
20110189815 | FORMATION OF CIGS ABSORBER LAYER MATERIALS USING ATOMIC LAYER DEPOSITION AND HIGH THROUGHPUT SURFACE TREATMENT ON COILED FLEXIBLE SUBSTRATES - An absorber layer may be formed on a substrate using atomic layer deposition reactions. An absorber layer containing elements of groups IB, IIIA and VIB may be formed by placing a substrate in a treatment chamber and performing atomic layer deposition of a group IB element and/or one or more group IIIA elements from separate sources onto a substrate to form a film. A group VIA element is then incorporated into the film and annealed to form the absorber layer. The absorber layer may be greater than about 25 nm thick. The substrate may be coiled into one or more coils in such a way that adjacent turns of the coils do not touch one another. The coiled substrate may be placed in a treatment chamber where substantially an entire surface of the one or more coiled substrates may be treated by an atomic layer deposition process. One or more group IB elements and/or one or more group IIIA elements may be deposited onto the substrate in a stoichiometrically controlled ratio by atomic layer deposition using one or more self limiting reactions. | 08-04-2011 |
20110189816 | METHOD OF PRODUCING PHOTOELECTRIC CONVERSION DEVICE - A method of producing a photoelectric conversion device having a multilayer structure formed on a substrate, the multilayer structure including a lower electrode, a photoelectric conversion layer made of a compound semiconductor layer, an n-type buffer layer made of a compound semiconductor layer, and a transparent conductive layer, is disclosed. A reaction solution, which is an aqueous solution containing an n-type dopant element, at least one of ammonia and an ammonium salt, and thiourea, is prepared, the n-type dopant is diffused into the photoelectric conversion layer by immersing the substrate including the photoelectric conversion layer in the reaction solution controlled to a temperature in the range from 20° C. to 45° C.; and the buffer layer is deposited on the photoelectric conversion layer by immersing the substrate including the photoelectric conversion layer subjected to the diffusion step in the reaction solution controlled to a temperature in the range from 70° C. to 95° C. | 08-04-2011 |
20110223710 | Deposition Chamber Cleaning System and Method - An in-situ method of cleaning a vacuum deposition chamber can include flowing at least one reactive gas into the chamber. | 09-15-2011 |
20110244624 | Production Method of Photoelectric Conversion Device and Solution for Forming Semiconductor - The production method of a photoelectric conversion device comprises the steps of adding a chalcogenide powder of a group-IIIB element to an organic solvent including a single source precursor containing a group-IB element, a group-IIIB element, and a chalcogen element to prepare a solution for forming a semiconductor, and forming a semiconductor containing a group-I-III-VI compound by use of the solution for forming a semiconductor. | 10-06-2011 |
20110256661 | Method for Improved Patterning Accuracy for Thin Film Photovoltaic Panels - A method for patterning a thin film photovoltaic panel on a substrate characterized by a compaction parameter. The method includes forming molybdenum material overlying the substrate and forming a first plurality of patterns in the molybdenum material to configure a first patterned structure having a first inter-pattern spacing. Additionally, the method includes forming a precursor material comprising at least copper bearing species and indium bearing species overlying the first patterned structure. Then the substrate including the precursor material is subjected to a thermal processes to form at least an absorber structure. | 10-20-2011 |
20110263072 | FORMING CHALCOGENIDE SEMICONDUCTOR ABSORBERS - Sulfur-containing chalcogenide absorbers in thin film solar cell are manufactured by sequential sputtering or co-sputtering targets, one of which contains a sulfur compound, onto a substrate and then annealing the substrate. The anneal is performed in a non-sulfur containing environment and avoids the use of hazardous hydrogen sulfide gas. A sulfurized chalcogenide is formed having a sulfur concentration gradient. | 10-27-2011 |
20110263073 | Physical Vapour Deposition Processes - A method of depositing a film of a first material, such as Cadmium Telluride on to a second material, such as Cadmium Sulphide by a physical vapour deposition process wherein said deposition is performed in an atmosphere having a relatively high ambient pressure, in one embodiment between 50 and 200 Torr. | 10-27-2011 |
20110269262 | Method and System for Large Scale Manufacture of Thin Film Photovoltaic Devices Using Multi-Chamber Configuration - A method for large scale manufacture of photovoltaic devices includes loading a substrate into a load lock station and transferring the substrate in a controlled ambient to a first process station. The method includes using a first physical deposition process in the first process station to cause formation of a first conductor layer overlying the surface region of the substrate. The method includes transferring the substrate to a second process station, and using a second physical deposition process in the second process station to cause formation of a second layer overlying the surface region of the substrate. The method further includes repeating the transferring and processing until all thin film materials of the photovoltaic devices are formed. In an embodiment, the invention also provides a method for large scale manufacture of photovoltaic devices including feed forward control. That is, the method includes in-situ monitoring of the physical, electrical, and optical properties of the thin films. These properties are used to determine and adjust process conditions for subsequent processes. | 11-03-2011 |
20110287579 | METHOD OF MANUFACTURING SOLAR CELL - A method of manufacturing a solar cell is presented. | 11-24-2011 |
20110294254 | LOW COST SOLAR CELLS FORMED USING A CHALCOGENIZATION RATE MODIFIER - Methods and devices are provided for forming an absorber layer. In one embodiment, a method is provided comprising of depositing a precursor material onto a substrate, wherein the precursor material may include or may be used with an additive to minimize concentration of group IIIA material such as Ga in the back portion of the final semiconductor layer. The additive may be a non-copper Group IB additive in elemental or alloy form. | 12-01-2011 |
20110318868 | Protective Layer for Large-Scale Production of Thin-Film Solar Cells - A solar cell includes a substrate, a protective layer located over a first surface of the substrate, a first electrode located over a second surface of the substrate, at least one p-type semiconductor absorber layer located over the first electrode, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a second electrode over the n-type semiconductor layer. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material, and the second electrode is transparent and electrically conductive. The protective layer has an emissivity greater than 0.25 at a wavelength of 2 μm, has a reactivity with a selenium-containing gas lower than that of the substrate, and may differ from the first electrode in at least one of composition, thickness, density, emissivity, conductivity or stress state. The emissivity profile of the protective layer may be uniform or non-uniform. | 12-29-2011 |
20120003786 | ELECTROPLATING METHODS AND CHEMISTRIES FOR CIGS PRECURSOR STACKS WITH CONDUCTIVE SELENIDE BOTTOM LAYER - The present invention provides a method and precursor structure to form a solar cell absorber layer. The method includes forming a CIGS solar cell absorber on a base by depositing a first layer on the base, where in the first layer includes non-crystalline copper-selenide that is electrically nonconductive, and then heat treating the first layer at a first temperature range to transform the non-crystalline copper-selenide into a crystalline copper-selenide that is electrically conductive, thereby ensuring that the first layer becomes a first conductive layer. Thereafter, other steps follow to complete formation of the CIGS solar cell absorber. | 01-05-2012 |
20120021559 | HIGH SPEED LASER CRYSTALLIZATION OF PARTICLES OF PHOTOVOLTAIC SOLAR CELLS - A system and method for enhancing the conversion efficiency of thin film photovoltaics. The thin film structure includes a photovoltaic absorbent layer covered by a confinement layer. A laser beam passes through the confinement layer and hits the photovoltaic absorbent layer. The laser can be pulsed to create localized rapid heating and cooling of the photovoltaic absorbent layer. The confinement layer confines the laser induced plasma plume creating a localized high-pressure condition for the photovoltaic absorbent layer. The laser beam can be scanned across specific regions of the thin film structure. The laser beam can be pulsed as a series of short pulses. The photovoltaic absorbent layer can be made of various materials including copper indium diselenide, gallium arsenide, and cadmium telluride. The photovoltaic absorbent layer can be sandwiched between a substrate and the confinement layer, and a molybdenum layer can be between the substrate and the photovoltaic absorbent layer. | 01-26-2012 |
20120028408 | DISTRIBUTOR HEATER - A vapor distributor assembly may include a carbon fiber heating element. | 02-02-2012 |
20120034733 | SYSTEM AND METHOD FOR FABRICATING THIN-FILM PHOTOVOLTAIC DEVICES - Described are a system and a method for depositing a thin film on a substrate. In some embodiments, the system includes a substrate transport system to transport a plurality of discrete substrates, such as glass substrates or wafers, along a closed path. The system also includes a metal deposition zone, a selenization zone and a cooling chamber each disposed on the closed path. During transport along the closed path, the metal deposition zone deposits a layer of a composite metal onto the discrete substrates and the selenization zone selenizes the layer of the composite metal. The cooling zone cools the discrete substrates prior to a subsequent pass through the metal deposition zone and the selenization zone. | 02-09-2012 |
20120034734 | SYSTEM AND METHOD FOR FABRICATING THIN-FILM PHOTOVOLTAIC DEVICES - Described are embodiments of methods for depositing a copper indium gallium diselenide (CIGS) film on a substrate, such as a web substrate or a discrete substrate. In various embodiments, an incremental layer of indium is deposited followed by deposition of a top incremental layer of copper gallium to create a multi-layer structure that is subsequently selenized. By capping the multi-layer structure with the copper gallium layer, the depletion of indium during the selenization of the multi-layer is reduced or eliminated. Additional multi-layers, each having a copper gallium cap layer, are formed and selenized to create the CIGS film. Optionally, the indium content and gallium content in each multi-layer are varied from the indium content and gallium content of one or more of the other multi-layers to achieve desired content gradients in the CIGS film. | 02-09-2012 |
20120058596 | METHODS AND APPARATUS FOR REAL-TIME MONITORING OF CADMIUM ION DURING SOLUTION GROWTH OF CADMIUM SULFIDE THIN FILMS - The present invention provides a reaction chamber to monitor a metal ion in solution during the formation of a metal-sulfide layer on a substrate. The reaction chamber houses a solution of an ammonium ion, a metal ion and a buffer. The reaction chamber includes an anion-selective electrode in the solution to monitor the metal ion that measures the metal ion during metal-ammonium complex formation, metal-thiourea complex formation, metal sulfide composition formation, metal sulfide layer formation or a combination thereof. | 03-08-2012 |
20120094429 | Sodium Salt Containing CIG Targets, Methods of Making and Methods of Use Thereof - A sputtering target includes at least one metal selected from copper, indium and gallium and a sodium containing compound. | 04-19-2012 |
20120122268 | SELENIZATION OF PRECURSOR LAYER CONTAINING CULNS2 NANOPARTICLES - A method of fabrication of thin films for photovoltaic or electronic applications is provided. The method includes fabricating a nanocrystal precursor layer and selenizing the nanocrystal precursor layer in a selenium containing atmosphere. The nanocrystal precursor layer includes one of CuInS | 05-17-2012 |
20120156827 | METHOD FOR FORMING CADMIUM TIN OXIDE LAYER AND A PHOTOVOLTAIC DEVICE - In one aspect of the present invention, a method is provided. The method includes disposing a substantially amorphous cadmium tin oxide layer on a support and rapidly thermally annealing the substantially amorphous cadmium tin oxide layer by exposing a first surface of the substantially amorphous cadmium tin oxide layer to an electromagnetic radiation to form a transparent layer. A method of making a photovoltaic device is also provided. | 06-21-2012 |
20120164785 | METHOD OF MAKING A TRANSPARENT CONDUCTIVE OXIDE LAYER AND A PHOTOVOLTAIC DEVICE - In one aspect of the present invention, a method is provided. The method includes disposing a substantially amorphous cadmium tin oxide layer on a support; and thermally processing the substantially amorphous cadmium tin oxide layer in an atmosphere substantially free of cadmium from an external source to form a transparent layer, wherein the transparent layer has an electrical resistivity less than about 2×10 | 06-28-2012 |
20120190151 | METHOD FOR THE ACTIVATION OF CdTe THIN FILMS FOR THE APPLICATION IN CdTe/CdS TYPE THIN FILM SOLAR CELLS - A method for activation of CdTe films used in CdTe/CdS type thin film solar cells is described, in which a CdTe film is treated with a mixture formed by a fluorine-free chlorinated hydrocarbon and a gaseous chlorine-free fluorinated hydrocarbon. The fluorine-free chlorinated hydrocarbon and the gaseous chlorine-free fluorinated hydrocarbon are harmless to the ozone layer. | 07-26-2012 |
20120220067 | FURNACE AND METHOD OF FORMING THIN FILM USING THE SAME - A furnace includes a chamber extended in a first direction to accommodate a plurality of substrates, a process plate on which the substrates are mounted, and the process plate is disposed in the chamber and extended in the first direction. The process plate includes a plurality of thru-holes penetrating through an upper surface and a lower surface of the process plate. The furnace further includes at least one fan disposed under the lower surface to flow air in the chamber in a second direction such that the air flows from the upper surface to the lower surface through the thru-holes and a heater operatively connected to the chamber to heat the air in the chamber. | 08-30-2012 |
20120231574 | Continuous Electroplating Apparatus with Assembled Modular Sections for Fabrications of Thin Film Solar Cells - An electroplating production line or apparatus that can be assembled with modular plating sections in a roll-to-roll or reel-to-reel continuous plating process is provided. The length of the plating cell for a modular plating section can be readily changed to fit different current densities required in a roll-to-roll or reel-to-reel process. In addition, the electrolyte solution tanks can be simply connected or disconnected from the modular plating sections and moved around. With these designs, a multiple layers of coating with different metals, semiconductors or their alloys can be electrodeposited on this production line or apparatus with a flexibility to easily change the plating orders of different materials. This apparatus is particularly useful in manufacturing Group IB-IIIA-VIA and Group IIB-VIA thin film solar cells such as CIGS and CdTe solar cells on flexible conductive substrates through a continuous roll-to-roll or reel-to-reel process. | 09-13-2012 |
20120238054 | SCREEN-PRINTABLE QUATERNARY CHALCOGENIDE COMPOSITIONS - The present invention relates to screen-printable quaternary chalcogenide compositions. The present invention also provides a process for creating an essentially pure crystalline layer of the quaternary chacogenide on a substrate. Such coated substrates contain p-type to semiconductors and are useful as the absorber layer in a solar cell. | 09-20-2012 |
20120258566 | SUBSTRATE PROCESSING APPARATUS, METHOD FOR MANUFACTURING SOLAR BATTERY, AND METHOD FOR MANUFACTURING SUBSTRATE - There is provide a substrate processing apparatus, comprising: a processing chamber configured to house a plurality of substrates with a laminated film formed thereon which is composed of any one of copper-indium, copper-gallium, or copper-indium-gallium; a gas supply tube configured to introduce elemental selenium-containing gas or elemental sulfur-containing gas into the processing chamber; an exhaust tube configured to exhaust an atmosphere in the processing chamber; and a heating section provided so as to surround the reaction tube, wherein a base of the reaction tube is made of a metal material. | 10-11-2012 |
20120258567 | REACTION METHODS TO FORM GROUP IBIIIAVIA THIN FILM SOLAR CELL ABSORBERS - The present invention provides a method to form Group IBIIIAVIA solar cell absorber layers on continuous flexible substrates. In a preferred aspect, the method forms a Group IBIIIAVIA absorber layer for manufacturing photovoltaic cells by providing a workpiece having a precursor layer formed over a substrate, the precursor layer including copper, indium, gallium, selenium and a dopant of a Group IA material; heating the precursor layer to a first temperature; reacting the precursor layer at the first temperature for a first predetermined time to transform the precursor layer to a partially formed absorber structure; cooling down the partially formed absorber structure to a second temperature, wherein both the first temperature and the second temperature are above 400° C.; and reacting the partially formed absorber structure at the second temperature for a second predetermined time, which is longer than the first predetermined time, to form a Group IBIIIAVIA absorber layer. | 10-11-2012 |
20120270363 | MULTI-NARY GROUP IB AND VIA BASED SEMICONDUCTOR - Methods and devices are provided for forming an absorber layer. In one embodiment, a method is provided comprising of depositing a precursor material onto a substrate, wherein the precursor material may include or may be used with an additive to minimize concentration of group IIIA material such as Ga in the back portion of the final semiconductor layer. The additive may be a non-copper Group IB additive in elemental or alloy form. Some embodiments may use both selenium and sulfur | 10-25-2012 |
20120282730 | Ink composition, Chalcogenide Semiconductor Film, Photovoltaic Device and Methods for Forming the same - An ink composition includes a solvent system, a plurality of metal chalcogenide nanoparticles, at least one of metal ions and metal complex ions and a sodium source. The at least one of the metal ions and the metal complex ions are distributed on the surface of the metal chalcogenide nanoparticles and adapted to disperse the metal chalcogenide nanoparticles in the solvent system. The sodium source is dispersed in the solvent system and/or is included in at least one of the metal chalcogenide nanoparticle, the metal ions and the metal complex ions. The metals of the metal chalcogenide nanoparticles, the metal ions and the metal complex ions are selected from a group consisted of group I, group II, group III, group IV elements of periodic table, and sodium and include all metal elements of a chalcogenide semiconductor material. | 11-08-2012 |
20120288986 | ELECTROPLATING METHOD FOR DEPOSITING CONTINUOUS THIN LAYERS OF INDIUM OR GALLIUM RICH MATERIALS - An electrochemical deposition method to form uniform and continuous Group IIIA material rich thin films with repeatability is provided. Such thin films are used in fabrication of semiconductor and electronic devices such as thin film solar cells. In one embodiment, the Group IIIA material rich thin film is deposited on an interlayer that includes 20-90 molar percent of at least one of In and Ga and at least 10 molar percent of an additive material including one of Cu, Se, Te, Ag and S. The thickness of the interlayer is adapted to be less than or equal to about 20% of the thickness of the Group IIIA material rich thin film. | 11-15-2012 |
20120288987 | AQUEOUS PROCESS FOR PRODUCING CRYSTALLINE COPPER CHALCOGENIDE NANOPARTICLES, THE NANOPARTICLES SO-PRODUCED, AND INKS AND COATED SUBSTRATES INCORPORATING THE NANOPARTICLES - The present invention relates to aqueous processes to make metal chalcogenide nanoparticles that are useful precursors to copper zinc tin sulfide/selenide and copper tin sulfide/selenide. In addition, this invention provides processes for preparing crystalline particles from the metal chalcogenide nanoparticles, as well as processes for preparing inks from both the metal chalcogenide nanoparticles and the crystalline particles. | 11-15-2012 |
20120288988 | Method for Manufacturing Semiconductor Layer, Method for Manufacturing Photoelectric Conversion Device, and Semiconductor Layer Forming Solution - It is an object of the present invention to provide a method for manufacturing a semiconductor layer, a method for manufacturing a photoelectric conversion device, and a semiconductor layer forming solution which are able to easily manufacture a good semiconductor layer having a desired thickness. To accomplish this object, a starting solution containing a metallic element, a chalcogen organic compound and a Lewis base organic compound is initially produced. Next, heating the starting solution produces fine particles. The fine particles contain a metal chalcogenide which is a compound of the metallic element and a chalcogen element included in the chalcogen organic compound. A semiconductor layer is formed by using a semiconductor layer forming solution in which the fine particles are dispersed. | 11-15-2012 |
20120295396 | SYNTHESIZING PHOTOVOLTAIC THIN FILMS OF HIGH QUALITY COPPER-ZINC-TIN ALLOY WITH AT LEAST ONE CHALCOGEN SPECIES - A method for synthesizing a thin film of copper, zinc, tin, and a chalcogen species (“CZTCh” or “CZTSS”) with well-controlled properties. The method includes depositing a thin film of precursor materials, e.g., approximately stoichiometric amounts of copper (Cu), zinc (Zn), tin (Sn), and a chalcogen species (Ch). The method then involves re-crystallizing and grain growth at higher temperatures, e.g., between about 725 and 925 degrees K, and annealing the precursor film at relatively lower temperatures, e.g., between 600 and 650 degrees K. The processing of the precursor film takes place in the presence of a quasi-equilibrium vapor, e.g., Sn and chalcogen species. The quasi-equilibrium vapor is used to maintain the precursor film in a quasi-equilibrium condition to reduce and even prevent decomposition of the CZTCh and is provided at a rate to balance desorption fluxes of Sn and chalcogens. | 11-22-2012 |
20120315722 | High-Throughput Printing of Semiconductor Precursor Layer from Nanoflake Particles - Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be nanoflakes that have a high aspect ratio. The resulting dense films formed from nanoflakes are particularly useful in forming photovoltaic devices. | 12-13-2012 |
20120322197 | Solid Group IIIA Particles Formed Via Quenching - Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment, a process for forming solid particles is provided. The method includes providing a first suspension of solid and/or liquid particles containing at least one group IIIA element. A material may be added to substantially increase the melting point of at least one set of group IIIA-containing particles in the suspension into higher-melting solid particles comprising an alloy of the group IIIA element and at least a part of the added material. The suspension may be deposited onto a substrate to form a precursor layer on the substrate and the precursor layer is reacted in a suitable atmosphere to form a film. | 12-20-2012 |
20120322198 | METHODS FOR SUBLIMATION OF Mg AND INCORPORATION INTO CdTe FILMS TO FORM TERNARY COMPOSITIONS - A method for sublimating a thin film of Magnesium (Mg) on a semiconductor structure for improved efficiency is described. One embodiment includes a method comprised of providing a semiconductor substrate in a vacuum chamber, wherein the substrate comprises a window layer and an absorber layer made of CdTe. The method further includes heating the substrate to a diffusion temperature or greater followed by depositing a Mg film on the absorber layer using a sublimation process, wherein at least a portion of the Mg forms a Cd | 12-20-2012 |
20130005074 | METHOD FOR PREPARING AN ABSORBER THIN FILM FOR PHOTOVOLTAIC CELLS - A method for preparing an A-B-C | 01-03-2013 |
20130029454 | METHOD FOR MAKING PHOTOVOLTAIC DEVICES - A method for making a photovoltaic device is presented. The method includes steps of disposing a window layer on a substrate and disposing an absorber layer on the window layer. Disposing the window layer, the absorber layer, or both layers includes introducing a source material into a deposition zone, wherein the source material comprises oxygen and a constituent of the window layer, of the absorber layer or of both layers. The method further includes step of depositing a film that comprises the constituent and oxygen. | 01-31-2013 |
20130034933 | Dichalcogenide selenium ink and methods of making and using same - A method for preparing a Group 1a-1b-3a-6a material using a selenium ink comprising a chemical compound having a formula RZ—Se | 02-07-2013 |
20130040418 | PRECURSORS AND USES FOR CIS AND CIGS PHOTOVOLTAICS - Methods for photovoltaic absorber materials for uses including solar cells. The methods include depositing onto a substrate an ink comprising one or more compounds having the formula M | 02-14-2013 |
20130040419 | Selenium/group 1B ink and methods of making and using same - A method for preparing a Group 1a-1b-3a-6a material using a selenium/Group 1b ink comprising, as initial components: a selenium component comprising selenium, an organic chalcogenide component having a formula selected from RZ—Z′R′ and R | 02-14-2013 |
20130040420 | METHODS AND DEVICES FOR PROCESSING A PRECURSOR LAYER IN A GROUP VIA ENVIRONMENT - A precursor layer for a photovoltaic absorber layer on a substrate is formed, where the precursor layer comprises group IB and IIIA elements. The precursor layer is heated in an elongate furnace, where the heating includes depositing a group VIA-based material on the precursor layer. The substrate is placed on a support and advanced through the furnace. The support has an anti-stiction surface of a material including at least one of: silicon carbide, glass, spin-on-glass (SOG), diamond-like carbon (DLC), silicon carbide (SiC), a hydrogenated diamond coating, pyrolytic carbon and a fluoropolymer. | 02-14-2013 |
20130045565 | METHOD OF MANUFACTURING HIGH DENSITY CIS THIN FILM FOR SOLAR CELL AND METHOD OF MANUFACTURING THIN FILM SOLAR CELL USING THE SAME - Disclosed are a high density CIS thin film and a method of manufacturing the same, which includes coating CIS nanopowders, CIGS nanopowders or CZTS nanopowders on a substrate by non-vacuum coating, followed by heat treatment with cavities between the nanopowders filled with filling elements such as copper, indium, gallium, zinc, tin, and the like. The high density CIS thin film is applied to a photo-absorption layer of a thin film solar cell, thereby providing a highly efficient thin film solar cell. | 02-21-2013 |
20130065355 | LASER ANNEALING FOR THIN FILM SOLAR CELLS - A method for forming copper indium gallium (sulfide) selenide (CIGS) solar cells, cadmium telluride (CdTe) solar cells, and copper zinc tin (sulfide) selenide (CZTS) solar cells using laser annealing techniques to anneal the absorber and/or the buffer layers. Laser annealing may result in better crystallinity, lower surface roughness, larger grain size, better compositional homogeneity, a decrease in recombination centers, and increased densification. Additionally, laser annealing may result in the formation of non-equilibrium phases with beneficial results. | 03-14-2013 |
20130071966 | COMBINATORIAL METHODS FOR DEVELOPING SUPERSTRATE THIN FILM SOLAR CELLS - Methods for developing and investigating materials and processes for various layers used in manufacturing CdTe, CIGS, and CZTS TFPV superstrate devices using high productivity combinatorial techniques is described. Typical layers subjected to the HPC techniques include the buffer layers, absorber layers, and the contact interface layers. | 03-21-2013 |
20130078757 | METHODS OF MAKING PHOTOVOLTAIC DEVICES - One aspect of the present invention includes a method of making a photovoltaic device. The method includes disposing an absorber layer on a window layer. The method further includes treating at least a portion of the absorber layer with a first solution including a first metal salt to form a first component, wherein the first metal salt comprises a first metal selected from the group consisting of manganese, cobalt, chromium, zinc, indium, tungsten, molybdenum, and combinations thereof. The method further includes treating at least a portion of the first component with cadmium chloride to form a second component. The method further includes treating at least a portion of the second component with a second solution including a second metal salt to form an interfacial layer on the second component, wherein the second metal salt comprises a second metal selected from the group consisting of manganese, cobalt, nickel, zinc, and combinations thereof. | 03-28-2013 |
20130095601 | DEPOSITION CHAMBER CLEANING SYSTEM AND METHOD - An in-situ method of cleaning a vacuum deposition chamber can include flowing at least one reactive gas into the chamber. | 04-18-2013 |
20130095602 | ATYPICAL KESTERITE COMPOSITIONS - This invention relates to processes for making kesterite compositions with atypical Cu:Zn:Sn:S ratios and/or kesterite compositions with unusually small coherent domain sizes. This invention also relates to these kesterite compositions and their use in preparing CZTS films. | 04-18-2013 |
20130102108 | PREPARATION OF SEMICONDUCTOR FILMS - The invention relates to a preparation process for thin semiconducting inorganic films comprising various metals (Cu/In/Zn/Ga/Sn), selenium and/or sulfur. The process uses molecular precursors comprising metal complexes with oximato ligands. Copper-based chalcopyrites of the I-III-IV | 04-25-2013 |
20130109131 | METHOD OF FABRICATING CIGS BY SELENIZATION AT HIGH TEMPERATURE | 05-02-2013 |
20130122641 | Method of Fabricating Buried Contacts of Solar Cell with Curved Trenches - A solar cell having buried contacts is provided. Curved trenches are formed on a surface of a Si substrate to form the buried contacts. The curved trenches have deep depths with wafer break prevented. The buried contacts have good efficiency on collecting electrons obtained from conversion by the longer wavelength light. The present invention is fit for mass production with a high yield, a simple fabrication procedure, a low cost and a good performance. | 05-16-2013 |
20130122642 | Method of Fabricating CIGS By Selenization At High Temperature - A method for high temperature selenization of Cu—In—Ga metal precursor films comprises a partial selenization at a temperature between about 350 C and about 450 C in a Se-containing atmosphere followed by a more fully selenization step at a temperature between about 550 C and about 650 C in a Se-containing atmosphere. The Se-containing component of the atmosphere is removed through a rapid gas exchange process and the CIGS film is annealed to influence the Ga distribution throughout the depth of the film. | 05-16-2013 |
20130122643 | Nitrogen Reactive Sputtering of Cu-In-Ga-N for Solar Cells - Methods for forming Cu—In—Ga—N (CIGN) layers for use in TFPV solar panels are described using reactive PVD deposition in a nitrogen containing atmosphere. In some embodiments, the CIGN layers can be used as an absorber layer and eliminate the need of a selenization step. In some embodiments, the CIGN layers can be used as a protective layer to decrease the sensitivity of the CIG layer to oxygen or moisture before the selenization step. In some embodiments, the CIGN layers can be used as an adhesion layer to improve the adhesion between the back contact layer and the absorber layer. | 05-16-2013 |
20130130432 | RAPID THERMAL PROCESSING SYSTEM AND SULFIDATION METHOD THEREOF - A rapid thermal processing system includes a rapid thermal processing furnace, a back electrode substrate, and a cover. The rapid thermal processing furnace includes a reaction chamber and a heating device. The heating device is capable of generating heat energy. The back electrode substrate is adapted to dispose in the reaction chamber and has a precursor layer and a selenium layer formed on the precursor layer. The cover is disposed at a position corresponding to the selenium layer on the back electrode substrate and has a sulfur in solid form formed thereon, so as to make the sulfur in solid form opposite to the selenium layer. After the sulfur in solid form absorbs the heat energy generated by the heating device, the sulfur in solid form reacts with the selenium layer and the precursor layer to form a photoelectric transducing layer. | 05-23-2013 |
20130130433 | METHOD AND APPARATUS PROVIDING SINGLE STEP VAPOR CHLORIDE TREATMENT AND PHOTOVOLTAIC MODULES - A method and apparatus are disclosed in which cadmium chloride is deposited on a cadmium telluride layer while simultaneously heat treating the cadmium telluride layer. | 05-23-2013 |
20130137208 | METHOD FOR MANUFACTURING SOLAR CELL MODULE - Provided is a method of manufacturing a solar cell module The method includes: forming a bottom electrode layer on a substrate; forming a light absorbing layer on the bottom electrode layer and the substrate; forming a first trench that exposes the bottom electrode layer by patterning the light absorbing layer; and forming a window electrode layer that extends from the top of the light absorbing layer to the bottom of the bottom of the first trench, wherein the window electrode layer is formed through an ionized physical vapor deposition method. | 05-30-2013 |
20130143352 | PHOTOVOLTAIC DEVICES INCLUDING MG-DOPED SEMICONDUCTOR FILMS - A photovoltaic cell can include a dopant in contact with a semiconductor layer. | 06-06-2013 |
20130149810 | METHOD OF FABRICATING PHOTODIODE - A light-absorbing layer is composed of a compound-semiconductor film of chalcopyrite structure, a surface layer is disposed on the light-absorbing layer, the surface layer having a higher band gap energy than the compound-semiconductor film, an upper electrode layer is disposed on the surface layer, and a lower electrode layer is disposed on a backside of the light-absorbing layer in opposition to the upper electrode layer, the upper electrode layer and the lower electrode layer having a reverse bias voltage applied in between to detect electric charges produced by photoelectric conversion in the compound-semiconductor film, as electric charges due to photoelectric conversion are multiplied by impact ionization, while the multiplication by impact ionization of electric charges is induced by application of a high-intensity electric field to a semiconductor of chalcopyrite structure, allowing for an improved dark-current property, and an enhanced efficiency even in detection of low illumination intensities, with an enhanced S/N ratio. | 06-13-2013 |
20130157405 | MANUFACTURING METHODS FOR SEMICONDUCTOR DEVICES - A method of manufacturing semiconductor assemblies is provided. The manufacturing method includes thermally processing a first semiconductor assembly comprising a first semiconductor layer disposed on a first support and thermally processing a second semiconductor assembly comprising a second semiconductor layer disposed on a second support. The first and second semiconductor assemblies are thermally processed simultaneously, and the first and second semiconductor assemblies are arranged such that the first semiconductor layer faces the second semiconductor layer during the thermal processing. | 06-20-2013 |
20130157406 | LOW- COST SOLUTION APPROACH TO DEPOSIT SELENIUM AND SULFUR FOR CU(IN,GA)(SE,S)2 FORMATION - Methods of forming copper indium gallium diselenide (CIGS) layers for photovoltaic devices are disclosed. In one aspect, a solution based selenization method in the formation of CIGS is provided. In some embodiments a substrate containing elemental copper (Cu), indium (In) and gallium (Ga) is coated with a solution comprising a source of selenium (Se) dissolved in a solvent. After coating with the selenium based solution, the substrate is heated to form the CIGS layer. Coating of the substrate with the selenium based solution may be carried out by dip coating, slit casting, gap coating, ink-jet type coating, among other techniques. The solution based selenization method disclosed herein provides high material utilization and low cost, unlike vacuum based processes. | 06-20-2013 |
20130157407 | APPARATUS FOR INLINE PROCESSING OF Cu(In,Ga)(Se,S)2 EMPLOYING A CHALCOGEN SOLUTION COATING MECHANISM - Apparatus and method for the formation of copper indium gallium diselenide (CIGS) photovoltaic devices are disclosed. In one aspect, an inline production apparatus and method is described comprising sputter deposition and solution based selenization, followed by thermal annealing. Copper, indium and gallium are sputter deposited on one or more substrates in a sputter chamber. The substrates are then coated with a solution comprising a source of selenium in a selenium coating chamber. After coating with the selenium based solution, the substrates are heated in an annealing chamber to form a CIGS layer on the substrate. Substrates are conveyed though each of the chambers in a continuous manner, which provides for low-cost, fast throughput, inline production of CIGS photovoltaic devices. | 06-20-2013 |
20130157408 | ABSORBER LAYER FOR A THIN FILM PHOTOVOLTAIC DEVICE WITH A DOUBLE-GRADED BAND GAP - A gallium-containing alloy is formed on the light-receiving surface of a CIGS absorber layer, and, in conjunction with a subsequent selenization or anneal process, is converted to a gallium-rich region at the light-receiving surface of the CIGS absorber layer. A second gallium-rich region is formed at the back contact surface of the CIGS absorber layer during selenization, so that the CIGS absorber layer has a double-graded gallium concentration that increases toward the light-receiving surface and toward the back contact surface of the CIGS absorber layer. The double-graded gallium concentration advantageously produces a double-graded bandgap profile for the CIGS absorber layer. | 06-20-2013 |
20130164885 | Absorbers For High-Efficiency Thin-Film PV - Methods are described for forming CIGS absorber layers in TFPV devices with graded compositions and graded band gaps. Methods are described for depositing a Cu-rich precursor layer followed by a Cu-poor precursor layer. Methods are described for depositing a Cu-poor precursor layer followed by a Cu-rich precursor layer. Methods are described for depositing a Cu-poor precursor layer followed by a Cu-poor precursor layer. Methods are described for depositing a Cu-rich precursor layer followed by removing excess Cu-chalcogenide using a wet etch, followed by a Cu-poor precursor layer. Methods are described for utilizing Ag to increase the band gap at the front surface of the absorber layer. Methods are described for utilizing Al to increase the band gap at the front surface of the absorber layer. | 06-27-2013 |
20130164886 | Absorbers For High-Efficiency Thin-Film PV - Methods are described for forming CIGS absorber layers in TFPV devices with graded compositions and graded band gaps. Methods are described for utilizing Al to increase the band gap at the front surface of the absorber layer. Methods are described for forming a Cu—In—Ga layer followed by partial or full selenization. This results in a higher Ga concentration at the back interface. The substrate is then exposed to an aluminum CVD precursor while the substrate is still in the selenization equipment to deposit a thin Al layer. The substrate is then exposed to a Se source to fully convert the absorber layer. This results in a higher Al concentration at the front of the absorber. | 06-27-2013 |
20130171768 | FABRIATION METHOD FOR LIGHT ABSORPTION LAYER OF SOLAR CELL - The disclosure discloses a fabrication method for a light absorption layer of a solar cell, including: forming a precursor film on a substrate, wherein the precursor film includes the Group IB-IIB-IVA-VIA amorphous nanoparticles; and conducting a thermal process to the precursor film to form the light absorption layer on the substrate. | 07-04-2013 |
20130183793 | PROCESS AND HARDWARE FOR DEPOSITION OF COMPLEX THIN-FILM ALLOYS OVER LARGE AREAS - Systems and methods for depositing complex thin-film alloys on substrates are provided. In particular, systems and methods for the deposition of thin-film Cd | 07-18-2013 |
20130183794 | METHOD AND SYSTEM OF PROVIDING DOPANT CONCENTRATION CONTROL IN DIFFERENT LAYERS OF A SEMICONDUCTOR DEVICE - A method and system for controlling the amount of a second material incorporated into a first material by controlling the amount of a third material which can interact with the second material. | 07-18-2013 |
20130210190 | APPARATUS AND METHOD FOR PRODUCING SOLAR CELLS - A method and apparatus for forming a solar cell. The apparatus includes a housing defining a vacuum chamber and a rotatable substrate apparatus configured to hold a plurality of substrates on a plurality of surfaces wherein each of the plurality of surfaces are disposed facing an interior surface of the vacuum chamber. A first sputtering source is configured to deposit a plurality of absorber layer atoms of a first type over at least a portion of a surface of each one of the plurality of substrates. An evaporation source is disposed in a first subchamber of the vacuum chamber and configured to deposit a plurality of absorber layer atoms of a second type over at least a portion of the surface of each one of the plurality of substrates. A first isolation source is configured to isolate the evaporation source from the first sputtering source. | 08-15-2013 |
20130210191 | High-Throughput Printing of Semiconductor Precursor Layer by Use of Chalcogen-Rich Chalcogenides - A high-throughput method of forming a semiconductor precursor layer by use of a chalcogen-rich chalcogenides is disclosed. The method comprises forming a precursor material comprising group IB-chalcogenide and/or group IIIA-chalcogenide particles, wherein an overall amount of chalcogen in the particles relative to an overall amount of chalcogen in a group IB-IIIA-chalcogenide film created from the precursor material, is at a ratio that provides an excess amount of chalcogen in the precursor material. The excess amount of chalcogen assumes a liquid form and acts as a flux to improve intermixing of elements to form the group IB-IIIA-chalcogenide film at a desired stoichiometric ratio, wherein the excess amount of chalcogen in the precursor material is an amount greater than or equal to a stoichiometric amount found in the IB-IIIA-chalcogenide film. | 08-15-2013 |
20130217175 | Closed-Space Sublimation Process for Production of CZTS Thin-Films - In one embodiment, a method includes depositing a CZT(S, Se) precursor layer onto a substrate, introducing a source-material layer comprising Sn(S, Se) into proximity with the precursor layer, and annealing the precursor layer in proximity with the source-material layer in a constrained volume. | 08-22-2013 |
20130217176 | Closed-Space Annealing of Chalcogenide Thin-Films with Volatile Species - In one embodiment, a method includes depositing a chalcogenide precursor layer onto a substrate, introducing a cover into proximity with the precursor layer, and annealing the precursor layer in proximity with of the cover, where the annealing is performed in a constrained volume, and where the presence of the cover reduces decomposition of volatile species from the precursor layer during annealing. | 08-22-2013 |
20130217177 | Crystallization Annealing Processes for Production of CIGS and CZTS Thin-Films - In one embodiment, a method includes depositing a chalcogenide precursor layer onto a substrate, and annealing the precursor layer in the presence of a gaseous phase comprising volatile species, the partial pressure of each volatile species being approximately constant over substantially all of the surface of the precursor layer, the partial pressure of each species being between approximately 0.1 mTorr and 760 Torr, where the presence of the gaseous phase reduces decomposition of volatile species from the precursor layer during annealing. | 08-22-2013 |
20130224901 | Production Line to Fabricate CIGS Thin Film Solar Cells via Roll-to-Roll Processes - An industrial production line is presented to fabricate CIGS thin film solar cells on continuous flexible substrates in roll-to-roll processes. It provides an entire solution including procedures and related equipments from starting blank substrates to completed solar cells that can be used to fabricate solar modules. This production line contains some core apparatuses, such as a modular electroplating system to deposit CIGS materials, a modular thermal reactor to annealing the CIGS films, and a chemical bath deposition reactor to coat CdS buffer layer, are recently invented by the present inventor. The present production line can be conveniently used to prepare the CIGS thin film solar cells with high efficiency but low cost. | 08-29-2013 |
20130224902 | METHOD OF MANUFACTURING PHOTOVOLTAIC CELL - Provided is a method for manufacturing a photovoltaic cell in which a light absorption layer is formed by promoting chalcogenation. The method includes providing a microporous member, arranging an object on a first side of the microporous member, and arranging a chalcogen source on a second side of the microporous member opposite to the first side, heating the chalcogen source, transmitting a liquefied or evaporated portion of the heated chalcogen source through the microporous member, and exposing the object to the liquefied or evaporated portion of the heated chalcogen source that has passed through the microporous member | 08-29-2013 |
20130224903 | SYSTEMS AND METHODS FOR SOLAR CELLS WITH CIS AND CIGS FILMS MADE BY REACTING EVAPORATED COPPER CHLORIDES WITH SELENIUM - Systems and methods for solar cells with CIS and CIGS films made by reacting evaporated copper chlorides with selenium are provided. In one embodiment, a method for fabricating a thin film device comprises: providing a semiconductor film comprising indium (In) and selenium (Se) upon a substrate; heating the substrate and the semiconductor film to a desired temperature; and performing a mass transport through vapor transport of a copper chloride vapor and se vapor to the semiconductor film within a reaction chamber. | 08-29-2013 |
20130224904 | METHOD FOR FABRICATING THIN-FILM PHOTOVOLTAIC DEVICES - Described are an apparatus and a method for depositing a thin film on a web. The method includes depositing a first layer of a composite metal onto a web. A first selenium layer is deposited onto the first layer and the web is heated to selenize the first layer. Subsequently, a second layer of the composite metal is deposited onto the selenized first layer and a second selenium layer is deposited onto the second layer. The web is then heated to selenize the second layer. The composition of each composite metal layer can be varied to achieve desired bandgap gradients and other film properties. Segregation of gallium and indium is substantially reduced or eliminated because each incremental layer is selenized before the next incremental layer is deposited. The method can be implemented in production systems to deposit CIGS films on metal and plastic foils. | 08-29-2013 |
20130244370 | METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION DEVICE - In a method for producing a photoelectric conversion device including a light absorption layer made of a CIGS-based compound semiconductor, a vacancy formation process for forming Cu vacancies in a surface layer of the light absorption layer in a layered member that is composed of a lower electrode and the light absorption layer deposited on a substrate is performed, and after then, a pn junction is formed in the surface layer of the light absorption layer. | 09-19-2013 |
20130280855 | METHOD FOR PRODUCING COMPOUND HAVING CHALCOPYRITE STRUCTURE - To obtain high-quality chalcopyrite particles having a small particle size using a relatively inexpensive raw material in a simple and easy process in which complicated equipment (such as vacuum equipment) is not necessary. Provided is a method for producing a compound having a chalcopyrite structure represented by a compositional formula: ABC | 10-24-2013 |
20130309806 | METHOD FOR MANUFACTURING LIGHT-ABSORBING LAYER AND METHOD FOR MANUFACTURING SOLAR CELL USING THE SAME - Provided are a method for manufacturing a light-absorbing layer with excellent flatness of a surface thereof and high density and a method for manufacturing a solar cell using the same. A single target formed of a metallic compound is provided, and a metallic precursor thin film, which is a single layer, is formed on a substrate using the single target. The light-absorbing layer is formed by performing a selenization process on the metallic precursor thin film. | 11-21-2013 |
20130316490 | SOLAR CELL AND SOLAR CELL PRODUCTION METHOD - A solar cell according to the present invention includes as a light absorption layer a p-type semiconductor layer having a gradient of X/(In+X) ratios in a film thickness direction and containing an Ib group element, In, an element X, and a VIb group element, wherein a ratio C between values of an X/(In+X) ratio A of an uppermost surface of an p-type semiconductor layer and an X/(In+X) ratio B at a depth at which a smallest X/(In+X) ratio in a film is exhibited is represented by Expressions (1) and (2): | 11-28-2013 |
20130323878 | LIQUID PRECURSOR INKS FOR DEPOSITION OF IN-SE, GA-SE AND IN-GA-SE - An ink includes a solution of selenium in ethylene diamine solvent and a solution of at least one metal salt selected from the group consisting of an indium salt or a gallium salt in at least one solvent including an organic amide. The organic amide can include dimethylformamide. The organic amide can include N-methylpyrrolidone. | 12-05-2013 |
20130337602 | Sputtering Target Including a Feature to Reduce Chalcogen Build Up and Arcing on a Backing Tube - A sputtering target has a cylindrical backing tube having two edges and a sidewall comprising a middle portion located between two end portions. The sputtering material is on the backing tube. The sputtering material does not cover at least one end portion of the backing tube. The sputtering target also has a feature which prevents or reduces at least one of chalcogen buildup and arcing at the at least one end portion of the backing tube not covered by the sputtering material. | 12-19-2013 |
20130344646 | Absorbers for High-Efficiency Thin-Film PV - Methods are described for forming CIGS absorber layers in TFPV devices with graded compositions and graded band gaps. Methods are described for utilizing Ag to increase the band gap at the front surface of the absorber layer. Methods are described for utilizing Al to increase the band gap at the front surface of the absorber layer. Methods are described for utilizing at least one of Na, Mg, K, or Ca to increase the band gap at the front surface of the absorber layer. | 12-26-2013 |
20140004655 | MANUFACTURING METHODS FOR SEMICONDUCTOR DEVICES | 01-02-2014 |
20140011317 | Group XIII Selenide Nanoparticles - A method of preparing Group XIII selenide nanoparticles comprises reacting a Group XIII ion source with a selenol compound. The nanoparticles have an M | 01-09-2014 |
20140030843 | OHMIC CONTACT OF THIN FILM SOLAR CELL - A chalcogen-resistant material including at least one of a carbon nanotube layer and a high work function material layer is deposited on a transition metal layer on a substrate. A semiconductor chalcogenide/kesterite material layer is deposited over the chalcogen-resistant material. The carbon nanotubes, if present, can reduce contact resistance by providing direct electrically conductive paths from the transition metal layer through the chalcogen-resistant material and to the semiconductor chalcogenide material. The high work function material layer, if present, can reduce contact resistance by reducing chalcogenization of the transition metal in the transition metal layer. Reduction of the contact resistance can enhance efficiency of a solar cell including the chalcogenide semiconductor material. | 01-30-2014 |
20140038345 | Method of chalcogenization to form high quality cigs for solar cell applications - A method for high temperature selenization of Cu—In—Ga metal precursor films comprises ramping the precursor film to a temperature between about 300 C and about 400 C in a Se containing atmosphere and at a pressure between about 600 torr and 800 torr. A partial selenization is performed at a temperature between about 300 C and about 400 C in a Se-containing atmosphere. The film is then ramped to a temperature between about 400 C and about 550 C in a Se containing atmosphere and at a pressure between about 600 torr and 800 torr. The film is then annealed at a temperature between about 550 C and about 650 C in an inert gas. | 02-06-2014 |
20140045295 | PLASMA ANNEALING OF THIN FILM SOLAR CELLS - Embodiments relate to a method for annealing a solar cell structure including forming an absorber layer on a molybdenum (Mo) layer of a solar cell base structure. The solar cell base structure includes a substrate and the Mo layer is located on the substrate. The absorber layer includes a semiconductor chalcogenide material. Annealing the solar cell base structure is performed by exposing an outer layer of the solar cell base structure to a plasma. | 02-13-2014 |
20140051206 | METHOD AND APPARATUS PROVIDING MULTI-STEP DEPOSITION OF THIN FILM LAYER - A multi-stage method and apparatus for vaporizing and depositing a tellurium containing semiconductor material on a substrate. | 02-20-2014 |
20140057389 | PHOTOVOLTAIC BACK CONTACT - A method to preparing Cadmium telluride surface before forming metal back contact is disclosed. The method can include removing carbon from Cadmium telluride surface. | 02-27-2014 |
20140065762 | METHOD OF CONTROLLING THE AMOUNT OF Cu DOPING WHEN FORMING A BACK CONTACT OF A PHOTOVOLTAIC CELL - Methods for preparing an exposed surface of a p-type absorber layer of a p-n junction for coupling to a back contact in the manufacture of a thin film photovoltaic device are provided. The method can include: applying a treatment solution onto the exposed surface defined by the p-type absorber layer of cadmium telluride; and annealing the device with the p-type absorber layer in contact with the treatment solution to form a tellurium-enriched region in the p-type absorber layer at the exposed surface. The treatment solution comprises a chlorinated compound component that is substantially free from copper, a copper-containing metal salt, and a solvent. | 03-06-2014 |
20140065763 | METHODS OF TREATING A SEMICONDUCTOR LAYER - Methods for treating a semiconductor layer including a semiconductor material are presented. A method includes contacting at least a portion of the semiconductor material with a passivating agent. The method further includes forming a first region in the semiconductor layer by introducing a dopant into the semiconductor material; and forming a chalcogen-rich region. The method further includes forming a second region in the semiconductor layer, the second region including a dopant, wherein an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region. Photovoltaic devices are also presented. | 03-06-2014 |
20140073082 | METHOD OF MANUFACTURING LIGHT - ABSORBTION LAYER OF SOLAR CELL THROUGH SELENIZATION PROCESS UNDER ELEMENTAL SELENIUM VAPOR ATMOSPHERE AND THERMAL PROCESSING APPARATUS FOR MANUFACTURING LIGHT - ABSORBING LAYER - The method of manufacturing a light absorbing layer for a solar cell by performing thermal treatment on a specimen configured to include thin films of one or more of copper, indium, and gallium on a substrate and element selenium, includes steps of: (a) heating a wall of a chamber up to a predefined thin film formation temperature in order to maintain a selenium vapor pressure; (b) mounting the specimen and the element selenium on the susceptor at the room temperature and loading the susceptor in the chamber; and (c) heating the specimen in the lower portion of the susceptor and, at the same time, heating the element selenium in the upper portion of the susceptor, wherein, in the step (c), in order for liquefied selenium not to be condensed on the specimen which is loaded at the room temperature and is not yet heated, the temperature of the element selenium and the specimen loaded in the chamber are individually controlled, so that the selenium vapor pressure of an inner space of the chamber does not exceed a saturation vapor pressure corresponding to the temperature of the specimen. | 03-13-2014 |
20140080250 | Method of Fabricating High Efficiency CIGS Solar Cells - A method is disclosed for fabricating high efficiency CIGS solar cells including the deposition of a multi-component metal precursor film on a substrate. The substrate is then inserted into a system suitable for exposing the precursor to a chalcogen to form a chalcogenide TFPV absorber. One or more Na precursors are used to deposit a Na-containing layer on the precursor film in the system. This method eliminates the use of dedicated equipment and processes for introducing Na to the TFPV absorber. | 03-20-2014 |
20140087512 | LIQUID PRECURSOR FOR DEPOSITION OF COPPER SELENIDE AND METHOD OF PREPARING THE SAME - Liquid precursors containing copper and selenium suitable for deposition on a substrate to form thin films suitable for semiconductor applications are disclosed. Methods of preparing such liquid precursors and methods of depositing a precursor on a substrate are also disclosed. | 03-27-2014 |
20140099749 | METHOD FOR MANUFACTURING ABSORBER LAYER OF THIN FILM SOLAR CELL - A method for manufacturing an absorber layer of thin film solar cells is revealed. Firstly vapors of different metal-organic sources are generated in a plurality of containers used for mounting different metal-organic sources. Then the vapors of the metal-organic sources are mixed with a carrier gas and are filled into a reaction together with a reaction gas chamber through pipelines. Next the metals and the compounds are deposited on a substrate in the reaction chamber to form an absorber layer of a thin film solar cell. A flow rate of each metalorganic vapors filled into the reaction chamber is controlled by a mass flow controller respectively. | 04-10-2014 |
20140099750 | SOLUTION CONTAINMENT DURING BUFFER LAYER DEPOSITION - Improved methods and apparatus for forming thin-film layers of chalcogenide on a substrate web. Solutions containing the reactants for the chalcogenide layer may be contained substantially to the front surface of the web, controlling the boundaries of the reaction and avoiding undesired deposition of chalcogenide upon the back side of the web. | 04-10-2014 |
20140106500 | ROLL-TO-ROLL NON-VACUUM DEPOSITION OF TRANSPARENT CONDUCTIVE ELECTRODES - Methods and devices are provided for improved photovoltaic devices. Non-vacuum deposition of transparent conductive electrodes in a roll-to-roll manufacturing environment is disclosed. In one embodiment, a method is provided for forming a photovoltaic device. The method comprises processing a precursor layer in one or more steps to form a photovoltaic absorber layer; depositing a smoothing layer to fill gaps and depression in the absorber layer to reduce a roughness of the absorber layer; adding an insulating layer over the smooth layer; and forming a web-like layer of conductive material over the insulating layer. By way of nonlimiting example, the web-like layer of conductive material comprises a plurality of carbon nanotubes. In some embodiments, the absorber layer is a group IB-IIIA-VIA absorber layer. | 04-17-2014 |
20140106501 | METHOD AND APPARATUS FOR ELECTRODEPOSITION OF GROUP IIB-VIA COMPOUND LAYERS - Methods and apparatus are described for electrodeposition of Group IIB-VIA materials out of electrolytes comprising Group IIB and Group VIA species onto surfaces of workpieces. In one embodiment a method of electrodeposition is described wherein the control of the process is achieved by measuring an initial value of the electrodeposition current at the beginning of the process and adding Group VIA species into the electrolyte to keep the electrodeposition current substantially constant, such a within +/−10% of the initial value throughout the deposition period. In another embodiment an apparatus comprising multiple deposition chambers are described, each deposition chamber containing an anode and a workpiece, and wherein two thirds of the deposition chambers within the apparatus contain anodes comprising a substantially pure Group VIA element in their composition, and the rest of the deposition chambers contain anodes free from any Group VIA element in their composition. | 04-17-2014 |
20140113403 | High efficiency CZTSe by a two-step approach - Methods of forming CZTS absorber layers in a TFPV device with a graded bandgap with or without a graded concentration are provided. In general, a Cu—Zn—Sn—(S, Se) precursor film is formed by sputtering. The Cu—Zn—Sn—(S, Se) precursor film can be formed as a single layer or as a multilayer stack. The composition may be uniform or graded throughout the thickness of the film. In some embodiments, the sputtering is performed in a reactive atmosphere including a chalcogen source (e.g. H | 04-24-2014 |
20140127851 | METHOD FOR PRODUCING SEMICONDUCTOR LAYER, METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION DEVICE, AND SEMICONDUCTOR STARTING MATERIAL - Methods for producing a semiconductor layer and for producing a photoelectric conversion device, semiconductor raw material are disclosed. An embodiment of the method for producing a semiconductor layer includes: forming a film containing a metal element and an oxygen element; generating oxygen gas by heating the film; and forming a semiconductor layer containing a metal chalcogenide from the film by allowing the metal element to react with a chalcogen element. Another embodiment of the method includes forming a lower film containing a metal element; forming an upper film, which contains the metal element and a substance that contains oxygen, on the lower film; generating oxygen gas by heating the substance; and forming a semiconductor layer containing a metal chalcogenide from the lower film and the upper film by allowing a chalcogen element to react with the metal element in the lower film and the upper film. | 05-08-2014 |
20140134784 | METAL-BASED SOLUTION TREATMENT OF CIGS ABSORBER LAYER IN THIN-FILM SOLAR CELLS - A method for manufacturing a thin film solar cell device includes forming a back contact layer on a substrate, forming an CIGS absorber layer on the back contact layer, treating the CIGS absorber layer with a metal-based alkaline solution, and forming a buffer layer on the CIGS absorber layer where the treatment of the CIGS absorber layer improves the adhesion between the CIGS absorber layer and the buffer layer and also improves the quality of the p-n junction at the CIGS absorber layer/buffer layer interface. | 05-15-2014 |
20140134785 | SODIUM DOPED THIN FILM CIGS/CIGSS ABSORBER FOR HIGH EFFICIENCY PHOTOVOLTAIC DEVICES AND RELATED METHODS - A method of processing a thin-film absorber material with enhanced photovoltaic efficiency. The method includes providing a soda-lime glass substrate having a surface region and forming a barrier material overlying the surface region, followed by formation of a stack structure including a first thickness of a first precursor, a second thickness of a second precursor, and a third thickness of a third precursor. The first thickness of the first precursor is sputtered with a first target device including a first mixture of copper, gallium, and a first sodium species. The method further includes subjecting the soda-lime glass substrate having the stack structure in a thermal treatment process with at least H | 05-15-2014 |
20140134786 | CdTe Devices and Method of Manufacturing Same - A method of producing polycrystalline CdTe materials and devices that incorporate the polycrystalline CdTe materials are provided. In particular, a method of producing polycrystalline p-doped CdTe thin films for use in CdTe solar cells in which the CdTe thin films possess enhanced acceptor densities and minority carrier lifetimes, resulting in enhanced efficiency of the solar cells containing the CdTe material are provided. | 05-15-2014 |
20140141562 | REACTION APPARATUS AND METHOD FOR MANUFACTURING A CIGS ABSORBER OF A THIN FILM SOLAR CELL - The present invention provides an apparatus and a method for manufacturing a CIGS absorber of a thin film solar cell. The apparatus includes a supply chamber configured to provide a flexible substrate coated with precursors. The apparatus further includes a reaction chamber coupled to the supply chamber for at least subjecting the precursors on the flexible substrate to a reactive gas at a first state to form an absorber material. Additionally, the apparatus includes a gas-balancing chamber filled with the reactive gas at a second state. The gas-balancing chamber is communicated with the reaction chamber for automatically updating the first state of the reactive gas to the second state. Moreover, the apparatus includes a control system to maintain the second state of the reactive gas in the gas-balancing chamber at a preset condition and to adjust the transportation of the flexible substrate through the reaction chamber. | 05-22-2014 |
20140147959 | LIQUID METAL EMULSION - The invention relates to a liquid metal emulsion. The emulsion according to the invention includes a liquid metal selected from among gallium, indium, and the alloys thereof, and a solvent that is an alkanethiol. The invention is useful in particular in the field of manufacturing thin films. | 05-29-2014 |
20140147960 | IMPROVED PHOTOVOLTAIC DEVICE WITH SOLUTION-PROCESSED CHALCOGENIDE ABSORBER LAYER - The present invention provides a photovoltaic device, such as, a solar cell, having a substrate and an absorber layer disposed on the substrate. The absorber layer includes a doped or undoped composition represented by the formula: Cu | 05-29-2014 |
20140147961 | PHOTOVOLTAIC DEVICE WITH SOLUTION-PROCESSED CHALCOGENIDE ABSORBER LAYER - The present invention provides a photovoltaic device, such as, a solar cell, having a substrate and an absorber layer disposed on the substrate. The absorber layer includes a doped or undoped composition represented by the formula: Cu | 05-29-2014 |
20140147962 | MINORITY CARRIER BASED HGCDTE INFRARED DETECTORS AND ARRAYS - Disclosed are minority carrier based mercury-cadmium telluride (HgCdTe) infrared detectors and arrays, and methods of making, are disclosed. The constructions provided by the invention enable the detectors to be used at higher temperatures, and/or be implemented on less expensive semiconductor substrates to lower manufacturing costs. An exemplary embodiment a substrate, a bottom contact layer disposed on the substrate, a first mercury-cadmium telluride layer having a first bandgap energy value disposed on the bottom contact layer, a second mercury-cadmium telluride layer having a second bandgap energy value that is greater than the first bandgap energy value disposed on the first mercury-cadmium telluride layer, and a collector layer disposed on the second mercury-cadmium telluride layer, wherein the first and second mercury-cadmium telluride layers are each doped with an n-type dopant. | 05-29-2014 |
20140154835 | METHOD FOR FABRICATING SOLAR CELL - The disclosure provides a method for fabricating a solar cell, including: providing a first substrate; forming a light absorption precursor layer on the first substrate; conducting a thermal process to the light absorption precursor layer to form a light absorption layer, wherein the light absorption layer includes a first light absorption layer and a second light absorption layer, and the first absorption layer is formed on the first substrate; forming a second substrate on the second light absorption layer; removing the first substrate to expose a surface of the first light absorption layer; forming a zinc sulfide (ZnS) layer on the surface of the first light absorption layer; and forming a transparent conducting oxide (TCO) layer on the zinc sulfide (ZnS) layer. | 06-05-2014 |
20140162397 | High-Efficiency Thin-Film Photovoltaics with Controlled Homogeneity and Defects - A method for fabricating high efficiency CIGS solar cells includes the deposition of a chalcogenide material using a reactive sputtering technique. The reactive sputtering process utilizes metal or metal alloy target sputtered in the presence of a reactive chalcogen source. The chalcogenide material is then heated before being annealed using a directed energy source such as a laser or flash lamp. The chalcogenide material is then passivated after the anneal step to address chalcogen vacancies in the material that may have formed during the anneal step. | 06-12-2014 |
20140162398 | METHOD OF PREPARING NANO METAL SALT AND ABSORPTION LAYER OF SOLAR CELL UTILIZING THE NANO METAL SALT - Disclosed is a method of preparing a nano metal salt, including providing a metal cation solution, and providing hydroxide anions and carbonate anions to the metal cation solution to precipitate a nano metal salt. The nano metal salt has the hydroxide anion and the carbonate anion. The nano metal salt can be used to prepare an absorption layer of a solar cell. | 06-12-2014 |
20140170804 | METHOD AND APPARATUS FOR RESISTIVITY AND TRANSMITTANCE OPTIMIZATION IN TCO SOLAR CELL FILMS - A method and system provide for depositing a TCO, transparent conductive oxide, film in one chamber of a manufacturing tool then irradiating the TCO film with light energy in another chamber of the same tool. The TCO film is used in a solar cell and formed on a solar cell substrate in some embodiments. The method includes irradiating the TCO film for a time and energy to reduce resistance of the TCO film without reducing transmittance. One or multiple light sources are used in the light irradiation chamber. Light in the infrared range, visible light range and ultraviolet light range are used either individually or in combination. | 06-19-2014 |
20140170805 | Thermal Processing Utilizing Independently Controlled Elemental Reactant Vapor Pressures and/or Indirect Cooling - A machine includes a thermal ramp chamber; a thermal soak chamber coupled to the thermal ramp chamber; and a cooling chamber coupled to the thermal soak chamber. The cooling chamber can be an indirect cooling chamber including a thermal buffer that includes a substrate carrier. Each of the chambers can include an independently controlled elemental reactant source containing and supplying vapor having both i) independent control of a total vapor pressure of an elemental reactant containing vapor and ii) independent control of a partial vapor pressure of an elemental reactant vapor within that chamber. | 06-19-2014 |
20140186992 | COVER FOR PROTECTING SOLAR CELLS DURING FABRICATION - A removable cover system for protecting solar cells from exposure to moisture during fabrication processes. The cover system includes a cover having a configuration that complements the configuration of a solar cell substrate to be processed in an apparatus where moisture is present. A resiliently deformable seal member attached to the cover is positionable with the cover to engage and seal the top surface of the substrate. In one embodiment, the cover is dimensioned and arranged so that the seal member engages the peripheral angled edges and corners of the substrate for preventing the ingress of moisture beneath the cover. An apparatus for fabricating a solar cell using the cover and associated method are also disclosed. | 07-03-2014 |
20140186993 | Multilayer Thin-Film Back Contact System For Flexible Photovoltaic Devices On Polymer Substrates - A polymer substrate and back contact structure for a photovoltaic element, and a photovoltaic element include a CIGS photovoltaic structure, a polymer substrate having a device side at which the photovoltaic element can be located and a back side opposite the device side. A layer of dielectric is formed at the back side of the polymer substrate. A metal structure is formed at the device side of the polymer substrate. | 07-03-2014 |
20140193942 | Systems And Methods For Thermally Managing High-Temperature Processes On Temperature Sensitive Substrates - A method for depositing one or more thin-film layers on a flexible polyimide substrate having opposing front and back outer surfaces includes the following steps: (a) heating the flexible polyimide substrate such that a temperature of the front outer surface of the flexible polyimide substrate is higher than a temperature of the back outer surface of the flexible polyimide substrate, and (b) depositing the one or more thin-film layers on the front outer surface of the flexible polyimide substrate. A deposition zone for executing the method includes (a) one of more physical vapor deposition sources adapted to deposit one or more metallic materials on the front outer surface of the substrate, and (b) one or more radiant zone boundary heaters. | 07-10-2014 |
20140193943 | METHOD FOR FABRICATING Cu-In-Ga-Se FILM SOLAR CELL - A method for fabricating a Cu—In—Ga—Se film solar cell is provided. The method comprises: a) fabricating a molybdenum back electrode on a substrate; b) fabricating a Cu—In—Ga—Se absorbing layer on the back electrode by fractional sputtering in a plurality of sputter chambers; c) performing an annealing; d) fabricating an In | 07-10-2014 |
20140193944 | Multilayer Thin-Film Back Contact System For Flexible Photovoltaic Devices On Polymer Substrates - A polymer substrate and back contact structure for a photovoltaic element, and a photovoltaic element include a CIGS photovoltaic structure, a polymer substrate having a device side at which the photovoltaic element can be located and a back side opposite the device side. A layer of dielectric is formed at the back side of the polymer substrate. A metal structure is formed at the device side of the polymer substrate. | 07-10-2014 |
20140206132 | METHOD FOR INDIUM SPUTTERING AND FOR FORMING CHALCOPYRITE-BASED SOLAR CELL ABSORBER LAYERS - A solar cell includes an absorber layer formed of a CIGAS, copper, indium, gallium, aluminum, and selenium. A method for forming the absorber layer provides for using an indium-aluminum target and depositing an aluminum-indium film as a metal precursor layer using sputter deposition. Additional metal precursor layers such as a | 07-24-2014 |
20140220728 | METHODS OF FORMING SEMICONDUCTOR FILMS INCLUDING I2-II-IV-VI4 AND I2-(II,IV)-IV-VI4 SEMICONDUCTOR FILMS AND ELECTRONIC DEVICES INCLUDING THE SEMICONDUCTOR FILMS - Embodiments of the present invention generally include methods for forming semiconductor films having nominal I | 08-07-2014 |
20140220729 | METHOD OF PRODUCING CIGS FILM, AND METHOD OF PRODUCING CIGS SOLAR CELL BY USING SAME - A CIGS film production method is provided which ensures that a CIGS film having a higher conversion efficiency can be produced at lower costs at higher reproducibility even for production of a large-area device. A CIGS solar cell production method is also provided for producing a CIGS solar cell including the CIGS film. The CIGS film production method includes: a stacking step of stacking a layer (A) containing indium, gallium and selenium and a layer (B) containing copper and selenium in a solid phase in this order over a substrate; and a heating step of heating a stacked structure including the layer (A) and the layer (B) to melt a compound of copper and selenium of the layer (B) into a liquid phase to thereby diffuse copper from the layer (B) into the layer (A) to permit crystal growth to provide a CIGS film. | 08-07-2014 |
20140256082 | METHOD AND APPARATUS FOR THE FORMATION OF COPPER-INDIUMGALLIUM SELENIDE THIN FILMS USING THREE DIMENSIONAL SELECTIVE RF AND MICROWAVE RAPID THERMAL PROCESSING - A method of depositing CIGS thin films for solar panel construction comprising: providing a chamber; providing a substrate and placing said substrate inside said chamber; providing a material source; placing said material source inside said chamber; reducing pressure within said chamber; heating said substrate and said material source using electromagnetic heating (RF and Microwaves) source; perform deposition of said material source oto said substrate. | 09-11-2014 |
20140273335 | METHOD AND APPARATUS FOR DEPOSITING COPPER-INDIUM-GALLIUM SELENIDE (CuInGaSe2-CIGS) THIN FILMS AND OTHER MATERIALS ON A SUBSTRATE - An apparatus for deposition of a plurality of elements onto a solar cell substrate comprising: a housing; a transporting apparatus to transport said substrate in and out of said housing; a first tubing apparatus to deliver powders of a first elements to said housing wherein said first tubing apparatus is comprised of a first feeder tube located outside of said housing and joined to said housing; a first source material tube located outside of said housing and joined to said feeder tube; a valves located inside of said first source material tube sufficient to block access between said first source material tube and said first feeder tube; a first heating tube located inside of said housing and connected to said first feeder tube; a second tubing apparatus to deliver powders of a second elements to said housing wherein said second tubing apparatus is comprised of a second feeder tube located outside of said housing and joined to said housing; a second source material tube located outside of said housing and joined to said second feeder tube; valves located inside of said second source material tube sufficient to block access between said second source material tube and said second feeder tube; a second heating tube located inside of said housing and connected to said second feeder tube; a loading station for loading said substrate onto said transporting apparatus; one or more thermal sources to heat said housing and said first heating tube and said second heating tube. | 09-18-2014 |
20140273336 | Method of Forming Cu(InxGa1-x)S2 and Cu(InxGa1-x)Se2 Nanoparticles - A method for synthesizing Cu(In | 09-18-2014 |
20140273337 | Cu2ZnSnS4 Nanoparticles - Materials and methods for preparing Cu | 09-18-2014 |
20140287550 | PLASMA ENHANCED THERMAL EVAPORATOR - The present invention generally provides a method for forming a photovoltaic device including evaporating a source material to form a large molecule processing gas and flowing the large molecule processing gas through a gas distribution showerhead and into a processing area of a processing chamber having a substrate therein. The method includes generating a small molecule processing gas, and reacting the small molecule processing gas with a film already deposited on a substrate surface to form a semiconductor film. Additionally, apparatuses that may use the methods are also provided to enable continuous inline CIGS type solar cell formation. | 09-25-2014 |
20140302633 | Selective Chemical Etching Process - The present invention relates to a process for selective wet chemical etching of a thin-film substrate comprising a CIGS surface layer. The present invention also relates to a process for producing cells in series for thin-film photovoltaic modules, which process implements the selective wet chemical etching process according to the invention. The present invention furthermore relates to a process for creating small patterns, such as for example monolithic interconnects, in thin-film photovoltaic devices, which process implements the selective wet chemical etching process according to the invention. | 10-09-2014 |
20140302634 | APPARATUS AND METHOD FOR PRODUCING SOLAR CELLS - A method and apparatus for forming a solar cell. The apparatus includes a housing defining a vacuum chamber and a rotatable substrate apparatus configured to hold a plurality of substrates on a plurality of surfaces. A first sputtering source is configured to deposit a plurality of absorber layer atoms of a first type over at least a portion of a surface of each one of the plurality of substrates. An evaporation source is configured to deposit a plurality of absorber layer atoms of a second type over at least a portion of the surface of each one of the plurality of substrates. | 10-09-2014 |
20140308774 | METHOD AND DEVICE FOR CADMIUM-FREE SOLAR CELLS - A method for fabricating a thin film photovoltaic device is provided. The method includes providing a substrate comprising a surface region made of a thin-film photovoltaic absorber including copper, indium, gallium, selenium, and sulfur species. Additionally, the method includes applying a dip-in chemical bath deposition process for forming a buffer layer containing at least zinc-oxygen-sulfide material but substantially free of cadmium species. Furthermore, the method includes producing a chemical bath including steps of heating a bath of water to about 75° C., adding aqueous ammonia to mix with the bath of water, adding a solution of sodium hydroxide, adding zinc salt solution, and adding a solution of thiourea. The dip-in chemical bath deposition process includes immersing a plurality of substrates formed with the thin-film photovoltaic absorber substantially vertically in the chemical bath for 30 minutes to form the zinc-oxygen-sulfide buffer layer followed by a cleaning and drying process. | 10-16-2014 |
20140322859 | FABRICATION OF IONIC LIQUID ELECTRODEPOSITED CU-SN-ZN-S-SE THIN FILMS AND METHOD OF MAKING - A semiconductor thin-film and method for producing a semiconductor thin-films comprising a metallic salt, an ionic compound in a non-aqueous solution mixed with a solvent and processing the stacked layer in chalcogen that results in a CZTS/CZTSS thin films that may be deposited on a substrate is disclosed. | 10-30-2014 |
20140335649 | Compound semiconductor precursor ink composition, method for forming a chalcogenide semiconductor film, and method for forming a photovoltaic device - A compound semiconductor precursor ink composition includes an ink composition for forming a chalcogenide semiconductor film and a peroxide compound mixed with the ink composition. A method for forming a chalcogenide semiconductor film and a method for forming a photovoltaic device each include using the compound semiconductor precursor ink composition containing peroxide compound to form a chalcogenide semiconductor film. | 11-13-2014 |
20140342495 | PREPARATION OF CIGS ABSORBER LAYERS USING COATED SEMICONDUCTOR NANOPARTICLE AND NANOWIRE NETWORKS - We disclose a method of preparing CIGS absorber layers using coated semiconductor nanoparticle and nanowire networks. The nanoparticles and nanowires containing one or more elements from group IB and/or IIIA and/or VIA are prepared from metal salts such as metal chloride and acetate at room temperature without inert gas protection. A uniform and non-aggregation CIGS precursor layer is fabricated with the formation of nanoparticle and nanowire networks utilizing ultrasonic spaying technique. High quality CIGS film is obtained by cleaning the residue salts and carbon agents at an increased temperature and selenizing the pretreated precursor layer. | 11-20-2014 |
20140342496 | PREPARATION OF CIGS ABSORBER LAYERS USING COATED SEMICONDUCTOR NANOPARTICLE AND NANOWIRE NETWORKS - We disclose a method of preparing CIGS absorber layers using coated semiconductor nanoparticle and nanowire networks. The nanoparticles and nanowires containing one or more elements from group IB and/or IIIA and/or VIA are prepared from metal salts such as metal chloride and acetate at room temperature without inert gas protection. A uniform and non-aggregation CIGS precursor layer is fabricated with the formation of nanoparticle and nanowire networks utilizing ultrasonic spraying technique. High quality CIGS film is obtained by cleaning the residue salts and carbon agents at an increased temperature and selenizing the pretreated precursor layer. | 11-20-2014 |
20140342497 | SODIUM/MOLYBDENUM COMPOSITE METAL POWDERS, PRODUCTS THEREOF, AND METHODS FOR PRODUCING PHOTOVOLTAIC CELLS - A method for producing a metal article may include: Producing a supply of a composite metal powder by: providing a supply of molybdenum metal powder; providing a supply of a sodium compound; combining the molybdenum metal powder and the sodium compound with a liquid to form a slurry; feeding the slurry into a stream of hot gas; and recovering the composite metal powder; and consolidating the composite metal powder to form the metal article, the metal article comprising a sodium/molybdenum metal matrix. Also disclosed is a metal article produced accordance with this method. | 11-20-2014 |
20140363918 | APPARATUS AND METHOD FOR PRODUCING SOLAR CELLS USING LIGHT TREATMENT - An light apparatus used in forming a solar cell includes a housing separate from other processing in a deposition processing system, a transport mechanism for carrying a solar cell into the housing after deposition of a front contact layer in the deposition processing system, and one or more light source elements arranged to apply light on the solar cell after deposition of the front contact layer. A method of making a solar cell includes forming a back contact layer on a glass substrate, forming an absorber layer on the back contact layer, forming a buffer layer on the absorber layer, and forming a front contact layer above the buffer layer, the glass substrate, back contact layer, absorber layer, buffer layer, and front contact layer forming a first module. The method includes applying a light source to the first module after forming the front contact layer separate from other processing. | 12-11-2014 |
20140370649 | METHOD AND APPARATUS FOR FORMING COPPER(Cu) OR ANTIMONY(Sb) DOPED ZINC TELLURIDE AND CADMIUM ZINC TELLURIDE LAYERS IN A PHOTOVOLTAIC DEVICE - A method and apparatus for an amount of Cu or Sb dopant incorporated into a zinc-based layer as the layer is being formed. The layer is formed over a coated substrate using an electrochemical deposition (ECD) process. In the ECD process, the bias voltage and plating solution composition may be systematically changed during the electrochemical deposition process to change the amount of Cu or Sb dopant incorporated into the plated layer. | 12-18-2014 |
20150017756 | APPARATUS AND METHOD FOR PRODUCING CIGS ABSORBER LAYER IN SOLAR CELLS - A method of forming an absorber layer of a solar cell includes forming a plurality of precursor layers over a surface of a bottom electrode of a solar cell substrate. The step of forming includes depositing a first layer comprising selenium and copper and at least one of gallium or indium over at least a portion of the surface using a sputtering source or an evaporation source, the first layer having a first concentration of copper, depositing a second layer comprising selenium and at least one of the group consisting of copper, gallium or indium over at least the portion of the surface, the second layer having a second concentration of copper less than the first concentration of copper, and annealing the precursor layers to form an absorber layer. | 01-15-2015 |
20150017757 | APPARATUS AND METHODS FOR FORMING THIN FILM SOLAR CELL MATERIALS - A method for forming thin film solar cell materials introducing a first inert gas mixture that includes hydrogen selenide into a chamber at a first pressure value until the chamber reaches a second pressure value and at a first temperature value, wherein the second pressure value is a predefined percentage of the first pressure value. The temperature in the chamber is increased to a second temperature value for a selenization process so that the pressure in the chamber increases to a third pressure value. Residual gas that is generated during the selenization process can be removed from the chamber. A second inert gas mixture that includes hydrogen sulfide is added into the chamber until the chamber reaches a fourth pressure value. The temperature in the chamber is increased to a third temperature value for a sulfurization process. The chamber is cooled after the sulfurization process. | 01-15-2015 |
20150024543 | Preparation of Copper Selenide Nanoparticles - A process for producing copper selenide nanoparticles by effecting conversion of a nanoparticle precursor composition comprising copper and selenide ions to the material of the copper selenide nanoparticles in the presence of a selenol compound. Copper selenide-containing films and CIGS semiconductor films produced using copper selenide as a fluxing agent are also disclosed. | 01-22-2015 |
20150031163 | Back Contact Paste with Te Enrichment and Copper Doping Control in Thin Film Photovoltaic Devices - Methods for forming a back contact on a thin film photovoltaic device are provided that include applying a conductive paste onto a surface defined by a p-type absorber layer (e.g., comprising cadmium telluride) of a p-n junction and curing the conductive paste to form a conductive coating on the surface defined by a p-type absorber layer of the p-n junction. The conductive paste can include a conductive material, a solvent system, and a binder such that during curing an acid from the conductive paste reacts to enrich the surface with tellurium while copper is deposited onto the Te enriched surface. The acid is then substantially consumed during curing. | 01-29-2015 |
20150031164 | Vapor Deposition Apparatus for Continuous Deposition of Multiple Thin Film Layers on a Substrate - Vapor deposition apparatus for forming stacked thin films on discrete photovoltaic module substrates conveyed in a continuous non-stop manner through the apparatus are provided. The apparatus includes a first sublimation compartment positioned over a first deposition area of said apparatus, a second sublimation compartment positioned over a second deposition area of said apparatus, and an internal divider positioned therebetween and defining a middle seal member. An actuator is attached to the internal divider and is configured to move the internal divider to control intermixing of first source material vapors and second source material vapors within the first deposition area and the second deposition area. Methods are also generally provided for depositing stacked thin films on a substrate. | 01-29-2015 |
20150031165 | PHOTOVOLTAIC DEVICE INTERCONNECT - Scribing and deposition processes can be used to interconnect cells within photovoltaic modules. | 01-29-2015 |
20150031166 | METHOD OF MANUFACTURING LIGHT ABSORBING LAYER FOR SOLAR CELL USING SELENIZATION PROCESS UNDER ELEMENT SELENIUM VAPOR AMBIENCE AND THERMAL TREATMENT APPARATUS FOR MANUFACTURING LIGHT ABSORBING LAYER - A method of manufacturing a light absorbing layer for a solar cell by performing thermal treatment on a specimen configured to include thin films of one or more of copper, indium, and gallium on a substrate and element selenium, includes steps of: heating a wall of a chamber up to a predefined thin film formation temperature in order to maintain a selenium vapor pressure; mounting the specimen and the element selenium on the susceptor at the room temperature and loading the susceptor in the chamber; and heating the specimen in the lower portion of the susceptor and, at the same time, heating the element selenium in the upper portion of the susceptor. | 01-29-2015 |
20150037927 | METHOD FOR PRODUCING THE PENTANARY COMPOUND SEMICONDUCTOR CZTSSE DOPED WITH SODIUM - A method for producing a layered stack for manufacturing a thin film solar cell having a compound semiconductor of the type Cu | 02-05-2015 |
20150044813 | METHOD OF FORMING METAL CHALCOGENIDE DISPERSION, METAL CHALCOGENIDE DISPERSION, METHOD OF PRODUCING LIGHT ABSORBING LAYER OF SOLAR CELL, METHOD OF PRODUCING SOLAR CELL - A method of producing a metal chalcogenide dispersion usable in forming a light absorbing layer of a solar cell, the method including: a metal chalcogenide nano particle formation step in which at least one metal or metal compound selected from the group consisting of a group 11, 12, 13, 14 or 15 metal or metal compound, a water-containing solvent and a group 16 element-containing compound are mixed together to obtain metal chalcogenide nano particles; and an addition step in which a compound (1) represented by general formula (1) is added to the metal chalcogenide nano particles, thereby obtaining a metal chalcogenide dispersion (wherein R | 02-12-2015 |
20150044814 | APPARATUS AND METHOD FOR FORMING CHALCOGENIDE SEMICONDUCTOR ABSORBER MATERIALS WITH SODIUM IMPURITIES - A method and system for forming chalcogenide semiconductor absorber materials with sodium impurities is provided. The system includes a sodium vaporizer in which a solid sodium source material is vaporized. The sodium vapor is added to reactant gases and/or annealing gases and directed to a furnace that includes a substrate with a metal precursor material. The precursor material reacts with reactant gases such as S-containing gases and Se-containing gases according to various process sequences. In one embodiment, a selenization operation is followed by an annealing operation and a sulfurization operation and the sodium vapor is caused to react with the metal precursor during at least one of the annealing and the sulfurization steps to produce a chalcogenide semiconductor absorber material that includes sodium dopant impurities. | 02-12-2015 |
20150050772 | METHOD OF FORMING CHALCOPYRITE THIN FILM SOLAR CELL - In a method of forming a CIGS film absorption layer, a first precursor is provided including a first substrate having a major process precursor film formed thereon, the major process precursor film containing two or more of Cu, In, Ga, and Se. A second precursor is provided including a second substrate having an element supplying precursor film formed thereon, the element supply precursor film containing two or more of Cu, In, Ga and Se. The precursors are oriented with the major process precursor film and element supplying precursor film facing one another so as to allow diffusion of elements between the films during annealing. The oriented films are annealed and then the precursors are separated, wherein the CIGS film is formed over the first substrate and either a CIGS film or a precursor film containing two or more of Cu, In, Ga, and Se remains over the second substrate. | 02-19-2015 |
20150079723 | Pressure Transfer Process for Thin Film Solar Cell Fabrication - In one aspect, a method for fabricating a thin film solar cell includes the following steps. A first absorber material is deposited as a layer A on a substrate while applying pressure to the substrate/layer A. A second absorber material is deposited as a layer B on layer A while applying pressure to the substrate/layer B. A third absorber material is deposited as a layer C on layer B while applying pressure to the substrate/layer C. A fourth absorber material is deposited as a layer D on layer C while applying pressure to the substrate/layer D. The first absorber material comprises copper, the second absorber material comprises indium, the third absorber material comprises gallium, and the fourth absorber material comprises one or more of sulfur and selenium, and wherein by way of performing the steps of claim | 03-19-2015 |
20150079724 | SYSTEMS AND METHODS FOR FORMING SOLAR CELLS WITH CuInSe2 AND Cu(In,Ga)Se2 FILMS - Systems and methods for forming solar cells with CuInSe | 03-19-2015 |
20150079725 | METHOD AND APPARATUS PROVIDING MULTI-STEP DEPOSITION OF THIN FILM LAYER - A multi-stage method and apparatus for vaporizing and depositing a tellurium containing semiconductor material on a substrate. | 03-19-2015 |
20150087107 | METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE - A method for manufacturing a photoelectric conversion device of an embodiment includes forming, on a first electrode, a photoelectric conversion layer comprising at least one of a chalcopyrite compound, a stannite compound, and a kesterite compound. The forming of the photoelectric conversion layer includes forming a photoelectric conversion layer precursor comprising at least one compound semiconductor of a chalcopyrite compound, a stannite compound, and a kesterite compound on the first electrode. The forming of the photoelectric conversion layer includes immersing the precursor in a liquid including at least one of Group IIa and Group IIb elements at 0° C. to 60° C., after forming of the photoelectric conversion layer precursor. The compound semiconductor on a side of the first electrode is at least either amorphous or larger in average crystal grain size than the compound semiconductor on an opposite side of the first electrode. | 03-26-2015 |
20150099325 | METHOD OF MAKING A TRANSPARENT METAL OXIDE ELECTRODE - The present invention relates to a method for enhancing the conductivity of an undoped transparent metal oxide to obtain a transparent conductive oxide (TCO) electrode. More in particular it relates to such a method comprising the steps of providing a transparent metal oxide, applying a UV transparent barrier layer on the transparent metal oxide, and irradiating the transparent metal oxide with UV radiation after applying the barrier layer. | 04-09-2015 |
20150118789 | METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERTER - A method for manufacturing a photoelectric converter ( | 04-30-2015 |
20150125989 | METHOD FOR PREPARING LIGHT-ABSORBING LAYER FOR CIS- OR CIGS-BASED SOLAR CELLS, AND LIGHT-ABSORBING INK FOR CIS- OR CIGS-BASED SOLAR CELLS - The present invention relates to a method for preparing a CIS- or CIGS-based light-absorbing layer which is to be included in thin-film solar cells. More particularly, the present invention relates to a method for preparing a CIS- or CIGS-based light-absorbing layer, which can ultimately improve the efficiency of solar cells, characterized by comprising the steps of: preparing a light-absorbing ink including a precursor of copper, indium, or gallium as an organic metal precursor, and a solvent, wherein a ligand in the organic metal precursor has a keto-enol tautomeric property; and coating a substrate with the light-absorbing ink and performing a heat treatment, thereby minimizing the remaining carbon impurities of the light-absorbing layer. | 05-07-2015 |
20150132885 | CIGS LIGHT-ABSORBING INK AND METHOD FOR PREPARING CIGS LIGHT-ABSORBING LAYER - The present invention relates to a method for preparing a CIS- or CIGS-based light-absorbing layer which is included in a thin film solar cell. More particularly, the present invention relates to a method for preparing a CIS- or CIGS-based light-absorbing layer which ultimately improves the efficiency of a solar cell since the remaining carbon impurities in the formed light-absorbing layer are minimized and additional sulfurization treatment or selenium treatment is made optional, not requisite. | 05-14-2015 |
20150140724 | DEPOSITION OF PHOTOVOLTAIC THIN FILMS BY PLASMA SPRAY DEPOSITION - In particular embodiments, a method is described for depositing thin films, such as those used in forming a photovoltaic cell or device. In a particular embodiment, the method includes providing a substrate suitable for use in a photovoltaic device and plasma spraying one or more layers over the substrate, the grain size of the grains in each of the one or more layers being at least approximately two times greater than the thickness of the respective layer. | 05-21-2015 |
20150303346 | METHOD FOR MANUFACTURING COMPOUND SOLAR CELL - In order to provide a method that can manufacture a compound solar cell with a high conversion efficiency at low cost, a buffer layer is formed by a sputtering method with the use of a high-frequency RF power source or a high-frequency RF power source and a direct-current (DC) power source in combination, while two cathode targets for sputtering are arranged to be opposed to each other on both sides of an imaginary central axis assumed to extend perpendicularly from a surface of a substrate over with a CIGS light absorbing layer is stacked. | 10-22-2015 |
20150325724 | METHOD OF PREPARING METAL NANOPARTICLES FOR SOLAR CELL, INK COMPOSITION INCLUDING THE METAL NANOPARTICLES, AND METHOD OF PREPARING THIN FILM USING THE SAME - Disclosed are a method of preparing metal nanoparticles for solar cells, an ink composition including the metal nanoparticles, and a method of preparing a thin film using the same. More particularly, there are provided a method of preparing metal nanoparticles for forming a light absorption layer of a solar cell, including preparing a first solution including a reducing agent, preparing a second solution including at least two salts selected from the group consisting of a copper (Cu) salt, a zinc (Zn) salt, and a tin (Sn) salt, preparing a mixture by mixing the first solution and the second solution, and synthesizing at least one kind of metal nanoparticles by reaction of the mixture and purifying the synthesized metal nanoparticles, an ink composition including the metal nanoparticles, and a method of preparing a thin film using the same. | 11-12-2015 |
20150340256 | Thermal Treatment System and Method of Performing Thermal Treatment and Method of Manufacturing CIGS Solar Cell Using the Same - Disclosed is a thermal treatment system which enables a uniform temperature distribution and a uniform concentration distribution of reaction gas in an entire reaction space for a thermal treatment process, a method of performing a thermal treatment, and a method of manufacturing a CIGS solar cell using the same, wherein the thermal treatment system may include a reaction chamber with a reaction space, an external chamber surrounding the reaction chamber, a door chamber provided to open or close the reaction space of the reaction chamber, and an air flow adjusting apparatus for circulation of an flow inside the reaction space of the reaction chamber, wherein the air flow adjusting apparatus includes a driving axis, an air flow suction unit connected with the driving axis, and an air flow discharging unit connected with the air flow suction unit. | 11-26-2015 |
20150340525 | METHOD FOR FORMING CHALCOGENIDE LAYERS - A method is provided for forming on a substrate a chalcogenide layer, the chalcogenide layer containing at least two metallic elements and containing Se. The method comprises depositing on the substrate a metallic layer containing the at least two metallic elements; and annealing the metallic layer in an environment comprising both a S-containing vapor such as H | 11-26-2015 |
20150357492 | CIGS FILM PRODUCTION METHOD, AND CIGS SOLAR CELL PRODUCTION METHOD USING THE CIGS FILM PRODUCTION METHOD - A CIGS film production method capable of suppressing oxidation of a front surface of a CIGS film, and a CIGS solar cell production method using the CIGS film production method includes the steps of: forming a first region having a Ga/(In+Ga) ratio progressively reduced as the thickness of the first region increases to a predetermined first thickness position from a back surface of the CIGS film; forming a second region having a Ga/(In+Ga) ratio progressively increased as the thickness of the second region increases to a predetermined second thickness position from the first region; and forming a third region on the second region by vapor-depositing Se and In, the third region having a Ga/(In+Ga) ratio progressively reduced toward a front surface of the CIGS film. | 12-10-2015 |
20160005891 | BACK CONTACT HAVING SELENIUM BLOCKING LAYER FOR PHOTOVOLTAIC DEVICES SUCH AS COPPER-INDIUM-DISELENIDE SOLAR CELLS - A photovoltaic device (e.g., solar cell) includes: a front substrate (e.g., glass substrate); a semiconductor absorber film; a back contact including a first conductive layer of or including copper (Cu) and a second conductive layer of or including molybdenum (Mo); and a rear substrate (e.g., glass substrate). A selenium blocking layer is provided between at least the Cu inclusive layer and the Mo inclusive layer. | 01-07-2016 |
20160005912 | CIGS FILM PRODUCTION METHOD, AND CIGS SOLAR CELL PRODUCTION METHOD USING THE CIGS FILM PRODUCTION METHOD - The present invention provides a CIGS film production method which ensures that a CIGS film excellent in conversion efficiency can be produced at lower costs with higher reproducibility, and a CIGS solar cell production method using the CIGS film production method. The CIGS film production method includes: a stacking step of stacking an (A) layer containing indium, gallium and selenium and a (B) layer containing copper and selenium in this order in a solid phase over a substrate while heating at a temperature of higher than 250° C. and not higher than 400° C.; and a heating step of further heating the resulting stack of the (A) layer and the (B) layer to melt a compound of copper and selenium in the (B) layer into a liquid phase, whereby copper is diffused from the (B) layer into the (A) layer to cause crystal growth to provide a CIGS film. | 01-07-2016 |
20160013356 | APPARATUS FOR MANUFACTURING PHOTOVOLTAIC CELL | 01-14-2016 |
20160027939 | METHOD AND SUBSTRATES FOR MAKING PHOTOVOLTAIC CELLS - Methods of and apparatuses for making a photovoltaic cell are provided. The photovoltaic cell is able to have a substrate made of a composite material. The composite material is able to be formed by mixing a binder and a physical property enhancing material to form a mixer. The binder is able to be pitch, such as mesophase pitch. The physical property enhancing material is able to be fiber glass. The substrate of the photovoltaic cell is able to be flexible, such that the photovoltaic cell is able to be applied on various surfaces. | 01-28-2016 |
20160049533 | METHOD OF FORMING CHALCOPYRITE LIGHT-ABSORBING LAYER - Disclosed is a method of forming a chalcopyrite light-absorbing layer for a solar cell, including: forming a thin film including a chalcopyrite compound precursor; and radiating light on the thin film, wherein the chalcopyrite compound precursor absorbs light energy and is thus crystallized. When forming the chalcopyrite light-absorbing layer, light, but not heat, is applied, thus preventing problems, including damage to a substrate due to heat and formation of MoSe | 02-18-2016 |
20160049542 | HOMOGENEOUS PRECURSOR FORMATION METHOD AND DEVICE THEREOF - A direct solution method based on a versatile amine-thiol solvent mixture which dissolves elemental metals, metal salts, organometallic complexes, metal chalcogenides, and metal oxides is described. The metal containing and metal chalcogenide precursors can be prepared by dissolving single or multiple metal sources, chalcogens, and/or metal chalcogenide compounds separately, simultaneously, or stepwise. Multinary metal chalcogenides containing at least one of copper, zinc, tin, indium, gallium, cadmium, germanium, and lead, with at least one of sulfur, selenium, or both are obtained from the above-mentioned metal chalcogenide precursors in the form of thin films, nanoparticles, inks, etc. Furthermore, infiltration of metal containing compounds into a porous structure can be achieved using the amine-thiol based precursors. In addition, due to the appreciable solubility of metal sources, metal chalcogenides, and metal oxides in the mixture of amine(s) and thiol(s), this solvent mixture can be used to remove these materials from a system. | 02-18-2016 |
20160060785 | Method to Fabricate Thin Film Solar Cell Absorbers with Roll-to-Roll Electroplating-Spraying Hybrid Apparatus - An electroplating-spraying hybrid apparatus that is assembled with modular electroplating sections in a roll-to-roll continuous electroplating and spraying process is provided. The length of the electroplating cell for a modular electroplating section is adjustable to fit different current densities and deposition thickness required in a roll-to-roll process. In addition, the electrolyte solution tanks can be simply connected or disconnected from the modular electroplating sections and moved away. With these designs, a multiple layers of coating with different metals or semiconductors can be electrodeposited through this apparatus with a flexibility to easily change the plating orders of different materials. Moreover, some dopant layers can be deposited with a spray pyrolysis method to coat materials that are not suitable for electroplating. This apparatus is particularly useful in manufacturing Group IB-IIIA-VIA and Group IIB-VIA thin film solar cells such as CIGS and CdTe absorbers on flexible substrates through a roll-to-roll process. | 03-03-2016 |
20160071990 | Three-Dimensional Photovoltaic Devices Including Cavity-containing Cores and Methods of Manufacture - Various stamping methods may reduce defects and increase throughput for manufacturing metamaterial devices. Metamaterial devices with an array of photovoltaic bristles, and/or vias, may enable each photovoltaic bristle to have a high probability of photon absorption. The high probability of photon absorption may lead to increased efficiency and more power generation from an array of photovoltaic bristles. Reduced defects in the metamaterial device may decrease manufacturing cost, increase reliability of the metamaterial device, and increase the probability of photon absorption for a metamaterial device. The increase in manufacturing throughput and reduced defects may reduce manufacturing costs to enable the embodiment metamaterial devices to reach grid parity. | 03-10-2016 |
20160111566 | ABSORBER SURFACE MODIFICATION - The present disclosure provides systems and methods for depositing an alkaline metal layer on an absorber to generate a copper-poor region at a surface of the absorber. The copper-poor region provides an increased efficiency over non-treated absorbers having copper-rich surfaces. The alkaline metal layer may be deposited by any suitable deposition method, such as, for example, a wet deposition method. After the alkaline metal layer is deposited, the absorber is annealed, causing the alkaline metal layer to interact with the absorber to reduce the copper-profile of the absorber at the interface between the alkaline metal layer and the absorber. | 04-21-2016 |
20160111585 | METHOD OF ABSORBER SURFACE REPAIRING BY SOLUTION PROCESS - Methods and systems for repairing oxidation of CIGS surfaces during manufacture of a CIGS solar cell are generally disclosed. Oxidation of an absorber reduces the photoluminescence intensity of the CIGS surface. The absorber is immersed in a reduction tank having a reducing reagent therein. The reducing reagent reverses the oxidation of the CIGS absorber, increasing the interface quality and corresponding photoluminescence intensity. After reversing the oxidation, a buffer layer is deposited on the CIGS absorber to prevent further surface oxidation. | 04-21-2016 |
20160133768 | INK COMPOSITION FOR MANUFACTURING LIGHT ABSORPTION LAYER OF SOLAR CELLS AND METHOD OF MANUFACTURING THIN FILM USING THE SAME - Disclosed are an ink composition for manufacturing a light absorption layer of solar cells and a method of manufacturing a thin film using the same. Particularly, an ink composition for manufacturing a light absorption layer of solar cells including core-shell structure nanoparticles including a core including a copper (Cu)-containing chalcogenide and a shell including a zinc (Zn)-containing chalcogenide; and tin (Sn)-containing bimetallic or intermetallic metal nanoparticles, or a tin (Sn)-containing chalcogenide nanoparticles, dispersed in a solvent, and a method of manufacturing a thin film using the same are disclosed. | 05-12-2016 |
20160155886 | METHOD OF MANUFACTURE OF CHALCOGENIDE-BASED PHOTOVOLTAIC CELLS | 06-02-2016 |
20160163911 | METHODS OF FABRICATING A PHOTOVOLTAIC MODULE, AND RELATED SYSTEM - A method of processing a semiconductor assembly is presented. The method includes fabricating a photovoltaic module including a semiconductor assembly. The fabrication step includes performing an efficiency enhancement treatment on the semiconductor assembly, wherein the efficiency enhancement treatment includes light soaking the semiconductor assembly, and heating the semiconductor assembly. The semiconductor assembly includes a window layer having an average thickness less than about 80 nanometers, wherein the window layer includes cadmium and sulfur. A related system is also presented. | 06-09-2016 |
20160181463 | METHODS OF TREATING A SEMICONDUCTOR LAYER | 06-23-2016 |
20160190383 | CONTINUOUS WEB APPARATUS AND METHOD USING AN AIR TO VACUUM SEAL AND ACCUMULATOR - A deposition apparatus includes an input spool located in non-vacuum input module, at least one vacuum process module, an accumulator, and an air to vacuum sealing mechanism. The accumulator and the sealing mechanism are configured to continuously provide a web substrate from the input spool at atmosphere into the at least one process module at vacuum without stopping the web substrate. | 06-30-2016 |
20160197213 | BARE QUANTUM DOTS SUPERLATTICE PHOTONIC DEVICES | 07-07-2016 |
20160197217 | METHOD OF MANUFACTURING COMPOUND THIN-FILM PHOTOVOLTAIC CELL | 07-07-2016 |
20170236710 | MACHINE AND PROCESS FOR CONTINUOUS, SEQUENTIAL, DEPOSITION OF SEMICONDUCTOR SOLAR ABSORBERS HAVING VARIABLE SEMICONDUCTOR COMPOSITION DEPOSITED IN MULTIPLE SUBLAYERS | 08-17-2017 |