Class / Patent application number | Description | Number of patent applications / Date published |
438089000 | Fusion or solidification of semiconductor region | 15 |
20090042334 | CMOS image sensor and method for fabricating the same - A CMOS image sensor includes a substrate including silicon, a silicon germanium (SiGe) epitaxial layer formed over the substrate, the SiGe epitaxial layer formed through epitaxial growth and doped with a predetermined concentration level of impurities, an undoped silicon epitaxial layer formed over the SiGe epitaxial layer by epitaxial growth, and a photodiode region formed from a top surface of the undoped silicon epitaxial layer to a predetermined depth in the SiGe epitaxial layer. | 02-12-2009 |
20090130795 | SYSTEMS AND METHODS FOR PREPARATION OF EPITAXIALLY TEXTURED THICK FILMS - The disclosed subject matter relates to the use of laser crystallization of thin films to create epitaxially textured crystalline thick films. In one or more embodiments, a method for preparing a thick crystalline film includes providing a film for crystallization on a substrate, wherein at least a portion of the substrate is substantially transparent to laser irradiation, said film including a seed layer having a predominant surface crystallographic orientation; and a top layer disposed above the seed layer; irradiating the film from the back side of the substrate using a pulsed laser to melt a first portion of the top layer at an interface with the seed layer while a second portion of the top layer remains solid; and re-solidifying the first portion of the top layer to form a crystalline laser epitaxial with the seed layer thereby releasing heat to melt an adjacent portion of the top layer. | 05-21-2009 |
20100075456 | METHOD AND SYSTEM FOR PRODUCING FILMS FOR DEVICES SUCH AS SOLAR CELLS FROM SEMICONDUCTOR POWDERS OR DUST - The present invention relates generally to production of photoelectric grade films or cells from semiconductor powders or dust. In one embodiment, the present invention provides a method for producing a photoelectric grade film from a semiconductor powder. The method includes providing a substrate, coating the substrate with a layer of the semiconductor powder and moving the substrate with the layer of the semiconductor powder under an energy source at a predefined rate, wherein the predefined rate is sufficient to melt the semiconductor powder by the energy source and to cool the substrate such that substantially all impurities are moved to an edge of the substrate. | 03-25-2010 |
20100261306 | Method of Making Photovoltaic Cell - A photovoltaic cell is made by coating a metal foil substrate with cadmium telluride powder, moving the powder coated foil across a cold plate or series of cooled rollers to prevent the substrate from melting, while melting the cadmium telluride powder by passing the powder coated foil under a microwave energy source. This forms a thin film of cadmium telluride on the foil. The cadmium telluride coated foil is then coated with cadmium sulfide powder, which is melted by passing the powder coated foil under a microwave energy source, thereby creating a P-N junction, and the cadmium sulfide layer is coated with indium, which is fused to the cadmium sulfide layer by microwave heating. | 10-14-2010 |
20110092013 | Method Of Manufacturing Photoelectric Conversion Device - A fragile layer is formed in a region at a depth of less than 1000 nm from one surface of a single crystal semiconductor substrate, and a first impurity semiconductor layer and a first electrode are formed at the one surface side. After bonding the first electrode and a supporting substrate, the single crystal semiconductor substrate is separated using the fragile layer or the vicinity as a separation plane, thereby forming a first single crystal semiconductor layer over the supporting substrate. An amorphous semiconductor layer is formed on the first single crystal semiconductor layer, and a second single crystal semiconductor layer is formed by heat treatment for solid phase growth of the amorphous semiconductor layer. A second impurity semiconductor layer having a conductivity type opposite to that of the first impurity semiconductor layer and a second electrode are formed over the second single crystal semiconductor layer. | 04-21-2011 |
20110306164 | METHOD FOR MANUFACTURING SOLAR CELL - A method for manufacturing a solar cell according to an exemplary embodiment includes: forming a first doping film on a substrate; patterning the first doping film so as to form a first doping film pattern and so as to expose a portion of the substrate; forming a diffusion prevention film on the first doping film pattern so as to cover the exposed portion of the substrate; etching the diffusion prevention film so as to form spacers on lateral surfaces of the first doping film pattern; forming a second doping film on the first doping film pattern so as to cover the spacer and exposed substrate; forming a first doping region on the substrate surface by diffusing an impurity from the first doping film pattern into the substrate; and forming a second doping region on the substrate surface by diffusing an impurity from the second doping film pattern into the substrate. | 12-15-2011 |
20120009728 | Apparatus and Method for Manufacturing CIGS Solar Cells - An apparatus and a method for manufacturing a CIGS solar cell are disclosed. The apparatus includes a buffer chamber, a first chamber, a second chamber and a mechanical device. The first chamber and the second chamber are located adjacent to the buffer chamber respectively. The mechanical device moves a substrate among the buffer chamber, the first chamber and the second chamber. The first chamber includes a deposition device for depositing a back electrode layer onto the substrate. The second chamber includes heat treatment device and for becoming a thin-film layer onto the back electrode layer. | 01-12-2012 |
20120028405 | METHOD AND MATERIAL FOR PROCESSING IRON DISILICIDE FOR PHOTOVOLTAIC APPLICATION - A method for providing a semiconductor material for photovoltaic devices, the method includes providing a sample of iron disilicide comprising approximately 90 percent or greater of a beta phase entity. The sample of iron disilicide is characterized by a substantially uniform first particle size ranging from about 1 micron to about 10 microns. The method includes combining the sample of iron disilicide and a binding material to form a mixture of material. The method includes providing a substrate member including a surface region and deposits the mixture of material overlying the surface region of the substrate. In a specific embodiment, the mixture of material is subjected to a post-deposition process such as a curing process to form a thickness of material comprising the sample of iron disilicide overlying the substrate member. In a specific embodiment, the thickness of material is characterized by a thickness of about the first particle size. | 02-02-2012 |
20120077304 | METHOD FOR FORMING IMPURITY LAYER, EXPOSURE MASK THEREFORE AND METHOD FOR PRODUCING SOLID-STATE IMAGING DEVICE - A method for forming an impurity layer, includes forming a resist material | 03-29-2012 |
20120129293 | METHODS OF MAKING AN UNSUPPORTED ARTICLE OF A SEMICONDUCTING MATERIAL USING THERMALLY ACTIVE MOLDS - The invention relates to methods of making unsupported articles of semiconducting material using thermally active molds having an external surface temperature, T | 05-24-2012 |
20130130430 | SPATIALLY SELECTIVE LASER ANNEALING APPLICATIONS IN HIGH-EFFICIENCY SOLAR CELLS - Various laser processing schemes are disclosed for producing various types of hetero-junction emitter and homo-junction emitter solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films. | 05-23-2013 |
20130164883 | LASER ANNEALING APPLICATIONS IN HIGH-EFFICIENCY SOLAR CELLS - Various laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films. | 06-27-2013 |
20130171766 | Annealing Methods for Backside Illumination Image Sensor Chips - A method includes performing a grinding on a backside of a semiconductor substrate. An image sensor is disposed on a front side of the semiconductor substrate. An impurity is doped into a surface layer of the backside of the semiconductor substrate to form a doped layer. A multi-cycle laser anneal is performed on the doped layer. | 07-04-2013 |
20130171767 | ION IMPLANTATION AND ANNEALING FOR HIGH EFFICIENCY BACK-CONTACT BACK-JUNCTION SOLAR CELLS - A back contact back junction thin-film solar cell is formed on a thin-film semiconductor solar cell. Preferably the thin film semiconductor material comprises crystalline silicon. Emitter regions, selective emitter regions, and a back surface field are formed through ion implantation and annealing processes. | 07-04-2013 |
20140213015 | LASER PATTERNING PROCESS FOR BACK CONTACT THROUGH-HOLES FORMATION PROCESS FOR SOLAR CELL FABRICATION - Embodiments of the invention contemplate formation of a high efficiency solar cell utilizing a laser patterning process to form openings in a passivation layer while maintaining good film properties of the passivation layer on a surface of a solar cell substrate. In one embodiment, a method of forming an opening in a passivation layer on a back surface of a solar cell substrate includes transferring a substrate having a passivation layer formed on a back surface of a substrate into a laser patterning apparatus, the substrate having a first type of doping atom on the back surface of the substrate and a second type of doping atom on a front surface of the substrate, providing laser radiation generated by the laser patterning apparatus from the front surface transmitting through the substrate to the passivation layer disposed on the back surface of the substrate, and forming openings in the passivation layer. | 07-31-2014 |