Entries |
Document | Title | Date |
20080233674 | Photo mask and method for fabricating image sensor using the same - A method for fabricating an image sensor includes forming an insulation layer over a substrate in a logic circuit region and a pixel region, forming a photoresist over the insulation layer, patterning the photoresist to form a photoresist pattern where the insulation layer in the pixel region is exposed and the insulation layer in the logic circuit region is not exposed, wherein a thickness of the photoresist pattern is gradually decreased in an interfacial region between the pixel region and the logic circuit region in a direction of the logic circuit region to the pixel region, and performing an etch back process over the insulation layer and the photoresist pattern in conditions that an etch rate of the photoresist pattern are substantially the same as that of the insulation layer. | 09-25-2008 |
20080254565 | METHOD FOR FABRICATING SEMICONDUCTOR IMAGE SENSOR - A semiconductor image sensor and a method for fabricating the same are described. The semiconductor image sensor includes a substrate having at least a photoactive region therein and an IR cutting layer over the photoactive region. | 10-16-2008 |
20080274580 | METHOD FOR MANUFACTURING IMAGE SENSOR - A method for manufacturing an image sensor including forming a metal line layer on a semiconductor substrate, and then forming color filters on the metal line layer, and then forming seed microlenses spaced apart on the color filters, and then cleaning the surface of the seed microlenses, and then forming a gapless microlenses on the color filters by depositing an inorganic layer on the seed microlenses and in spaces therebetween. A gapless microlens can prevent crosstalk and noise and enhance the image quality of the image sensor. Forming the microlens of thin inorganic layer can prevent cracking due to physical impacts. The adhesive force can be enhanced between the first and second organic films of the microlens by performing cleaning processes, which in turn, enhances the refractive index and light transmittance for incident light. | 11-06-2008 |
20080274581 | METHOD FOR MANUFACTURING IMAGE SENSOR - A method for manufacturing an image sensor that includes reducing the surface energy of the microlenses to prevent particles generated during a wafer sawing process from damaging the microlens or adhering to the microlens to cause a defective image. | 11-06-2008 |
20080286896 | METHOD FOR MANUFACTURING IMAGE SENSOR - A method for manufacturing an image sensor including forming an interlayer dielectric layer on a substrate including a photo diode; forming a color filter layer on the interlayer dielectric layer; forming an oxide film on the color filter layer; forming a plurality of micro lens patterns spaced apart on the oxide film; forming an oxide-based micro lens having a predetermined curvature by etching the oxide film using the micro lens pattern as a mask; and cleaning the micro lens patterns with a peroxosulfuric acid mixing solution. | 11-20-2008 |
20080286897 | Method for Manufacturing Image Sensor - Provided is a method for manufacturing an image sensor. In the method, a microlens is formed from an oxide layer. The oxide layer used for the microlenses can be formed using a nitrogen gas as dopant. A plurality of photoresist patterns can be formed on the oxide layer, and the oxide layer can be etched using the photoresist patterns as a mask to form-oxide layer microlenses having a constant curvature. In a further embodiment, a plasma treatment can be applied to the photoresist patterns during forming of the oxide layer microlenses. | 11-20-2008 |
20080293181 | METHOD FOR MANUFACTURING IMAGE SENSOR - A method for manufacturing an image sensor including forming a microlens array over a color filter array, forming a capping layer over the semiconductor substrate including the microlens array, forming a pad mask over the capping layer, and then exposing a pad in an interlayer dielectric layer. | 11-27-2008 |
20080293182 | Method for Manufacturing Image Sensor - Disclosed are methods of manufacturing an image sensor. The method can include forming a microlens by depositing photoresist bubbles on a substrate. The photoresist bubbles can be formed and deposited using an inkjet scheme. A curing process of the photoresist can be performed during formation of the photoresist bubbles before the photoresist bubbles are deposited on the substrate. In one embodiment, the photoresist bubbles can be color photoresist bubbles to form a color microlens that can function as a color filter and a microlens. | 11-27-2008 |
20090004770 | METHOD FOR MANUFACTURING VERTICAL CMOS IMAGE SENSOR - A method for manufacturing a vertical CMOS image sensor related to a semiconductor device is disclosed. A high-temperature double annealing process and/or an additional passivation nitride film are selectively applied in order to improve dark leakage characteristics and also to prevent or reduce an incidence of circular defects, thereby enhancing the quality and reliability of the vertical CMOS image sensor. | 01-01-2009 |
20090017575 | Methods Of Forming Openings - Some embodiments include methods of forming openings in which a metal-containing structure is formed over a region of a semiconductor substrate. A patterned metal-containing material is formed over the metal-containing structure, with the metal-containing material having a gap extending therethrough. An entirety of the metal-containing structure is removed through the gap to leave an opening over the region of the semiconductor substrate. The region of the semiconductor substrate may comprise CMOS sensors, and one or both of filter material and microlens material may be formed within the opening. | 01-15-2009 |
20090035889 | CMOS Image Sensor and Method for Manufacturing the Same - Provided is a CMOS image sensor. The CMOS image sensor can include a semiconductor substrate, a blue photodiode region, a red photodiode region, a green photodiode region, an overcoat layer, and microlenses. The substrate can have a first photodiode region, a second photodiode region, and a transistor region. The blue photodiode region is formed having a predetermined depth in the first photodiode region. The red photodiode region is formed in the first photodiode region having a depth greater than that of the blue photodiode region with a gap separating the red photodiode region from the blue photodiode region. The green photodiode region is formed in the second photodiode region having a depth between the depths of the blue and red photodiode regions. The overcoat layer is formed on the semiconductor substrate, and microlenses are formed on the overcoat layer to correspond to the first and second photodiode regions. | 02-05-2009 |
20090042332 | METHODS FOR FABRICATING A CMOS IMAGE SENSOR - A method for fabricating a CMOS image sensor includes providing a substrate having a sensor array region and a peripheral region defined thereon, forming at least a contact pad on the substrate of the peripheral region, forming a first dielectric layer covering the contact pad on the substrate, performing a first etching process to expose the contact pad and to form a step height, forming an optical shielding layer on the first dielectric layer, forming a plurality of color filters on the first dielectric layer, sequentially forming a planarizing layer and a plurality of micro-lenses on the first dielectric layer. | 02-12-2009 |
20090061556 | Method for Manufacturing Image Sensor - A method for manufacturing an image sensor according to an embodiment includes performing a plasma surface treatment on an oxide film microlens to mitigate high surface morphology. The image sensor can include a passivation layer on a substrate having a pad region and a pixel region and a color filter layer on the passivation layer. A first low temperature oxide can be formed over the substrate including the color filter layer; and an oxide film microlens can be formed on the first low temperature oxide layer. A portion of the first low temperature oxide layer can provide a seed microlens upon which a second low temperature oxide layer is formed to form the oxide film microlenses. The plasma surface treatment can then be applied with respect to the oxide film microlenses. | 03-05-2009 |
20090068784 | Method for Manufacturing of the Image Sensor - Methods for manufacturing an image sensor are provided. A semiconductor substrate having a transistor can be prepared, and a proton layer can be formed in the substrate. A hydrogen gas layer can be formed by performing a heat treatment process on the semiconductor substrate, and a bottom portion of the semiconductor substrate defined by the hydrogen gas layer can be removed. | 03-12-2009 |
20090068785 | MANUFACTURING METHOD OF IMAGE SENSOR DEVICE - A manufacturing method of image sensor device is provided. The image sensor device is suitable for a substrate having at least one bonding pad. A plurality of photodiode sensing areas is formed on the substrate, at least a dielectric layer is formed over the substrate and the bonding pad is disposed in the dielectric layer. The method includes forming a cover layer on the dielectric layer. Next, the cover layer is patterned to form an opening in a first portion of the cover layer on the bonding pad. A second portion of the cover layer in the opening is retained to cover a portion of the surface of the bonding pad. A plurality of color filters is formed on the cover layer, and then a planarization layer is formed on the cover layer and the color filters. Thereafter, a plurality of micro lenses is formed on the planarization layer. | 03-12-2009 |
20090104730 | METHODS FOR FABRICATING A CMOS IMAGE SENSOR - A method for fabricating a CMOS image sensor includes providing a substrate having a sensor array region and a peripheral region defined thereon, forming at least a contact pad on the substrate of the peripheral region, forming a first dielectric layer covering the contact pad on the substrate, performing a first etching process to expose the contact pad and to form a step height, forming an optical shielding layer on the first dielectric layer, forming a plurality of color filters on the first dielectric layer, sequentially forming a planarizing layer and a plurality of micro-lenses on the first dielectric layer. | 04-23-2009 |
20090111207 | METHOD OF FABRICATING AN INTEGRATED DETECTION BIOSENSOR - A method of fabricating an integrated detection biosensor, the biosensor comprising an assembly ( | 04-30-2009 |
20090111208 | COLORS ONLY PROCESS TO REDUCE PACKAGE YIELD LOSS - Disclosed is an ordered microelectronic fabrication sequence in which color filters are formed by conformal deposition directly onto a photodetector array of a CCD, CID, or CMOS imaging device to create a concave-up pixel surface, and, overlayed with a high transmittance planarizing film of specified index of refraction and physical properties which optimize light collection to the photodiode without additional conventional microlenses. The optically flat top surface serves to encapsulate and protect the imager from chemical and thermal cleaning treatment damage, minimizes topographical underlayer variations which would aberrate or cause reflection losses of images formed on non-planar surfaces, and, obviates residual particle inclusions induced during dicing and packaging. A CCD imager is formed by photolithographically patterning a planar-array of photodiodes on a semiconductor substrate. The photodiode array is provided with metal photoshields, passivated, and, color filters are formed thereon. A transparent encapsulant is deposited to planarize the color filter layer and completes the solid-state color image-forming device without conventional convex microlenses. | 04-30-2009 |
20090124037 | METHOD OF PREVENTING COLOR STRIATION IN FABRICATING PROCESS OF IMAGE SENSOR AND FABRICATING PROCESS OF IMAGE SENSOR - A fabricating process of an image sensor is provided. A substrate having thereon a circuit of the image sensor and an insulating layer is provided, wherein the insulating layer has therein a pad opening exposing a metal pad of the circuit. A filling layer is formed in the pad opening, and a color filter array is formed over the insulating layer. A planarization layer is formed over the substrate covering the color filter array, and a microlens array is formed on the planarization layer. The filling layer is then removed. | 05-14-2009 |
20090124038 | IMAGER DEVICE, CAMERA, AND METHOD OF MANUFACTURING A BACK SIDE ILLUMINATED IMAGER - A method of manufacturing a back side illuminated imager device comprises providing a substrate having a front side, a back side, and an edge extending from the front side to the back side; creating a defect layer in the substrate; defining an image array proximate the front side after creating the defect layer; and cleaving proximate the defect layer after defining the image array. Other methods and apparatus are also provided. | 05-14-2009 |
20090130792 | Method of fabricating image sensor - A method of fabricating an image sensor includes forming a photoelectric transformation device on a substrate and forming a dielectric layer structure on the substrate. The dielectric layer structure includes multi-layer interlayer dielectric layers and multi-layer metal interconnections which are located between the multi-layer interlayer dielectric layers. A cavity which penetrates the multi-layer interlayer dielectric layers on the photoelectric transformation device is formed. A heat treatment is performed on the substrate on which the cavity is formed. | 05-21-2009 |
20090142876 | INK COMPOSITION AND FABRICATION METHOD FOR COLOR CONVERSION FILM - An ink composition of a color conversion film is disclosed. The ink composition includes a fluorescent polymer (Formula I, II, III), an aromatic transparent unsaturated resin containing a phenyl or fluorene functional group (Formula IV, V), and a solvent of a cyclic compound, wherein the molecular structure of the aromatic transparent unsaturated resin is compatible to that of the fluorescent polymer. The invention further provides a fabrication method of a color conversion film including dispensing the disclosed ink composition on a substrate, and curing the ink composition to form the color conversion film. | 06-04-2009 |
20090155950 | CMOS IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME - A method for fabricating a CMOS image sensor includes sequentially forming an insulating film, a metal pad and a first passivation film over a semiconductor substrate including photodiodes, forming a planarization layer over the first passivation film, forming color filter layers over the planarization layer, forming an overcoating layer over the semiconductor substrate including the color filter layers, forming micro lenses over the overcoating layer, forming a photoresist film over the semiconductor substrate including the first passivation film and the micro lenses, and then etching the first passivation film using the photoresist film as a mask to expose the metal pad. | 06-18-2009 |
20090197365 | Treatment method for surface of substrate, method of fabricating image sensor by using the treatment method, and image sensor fabricated by the same - Provided may be a treatment method to remove defects created on the surface of a substrate, a method of fabricating an image sensor by using the treatment method, and an image sensor fabricated by the same. The treatment method may include providing a semiconductor substrate including a surface defect, providing a chemical solution to a surface of the semiconductor substrate, and removing the surface defect by consuming the surface of the semiconductor substrate and forming a chemical oxide layer on the semiconductor substrate. | 08-06-2009 |
20090197366 | SOLID-STATE IMAGE SENSOR, MANUFACTURING METHOD FOR SOLID-STATE IMAGE SENSOR, AND CAMERA - A solid-state image sensor includes a plurality of light-receiving elements arranged in a light-receiving area, and a plurality of micro-lenses corresponding to the light-receiving elements, and has a flattening film formed on the plurality of the micro-lenses. At a center of the light-receiving area, the micro-lenses are placed in positions directly above corresponding photodiodes, and placed in positions which are progressively offset from positions directly above the corresponding photodiodes, towards a center of the light receiving area, as micro-lenses are located farther from the center of the light-receiving area. | 08-06-2009 |
20090280596 | METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING ELECTRONIC APPARATUS - A method of manufacturing a solid-state imaging device, where a signal circuit is formed on an insulating interlayer on a first side of a semiconductor substrate in which a photoelectric conversion part is formed and light is incident on the photoelectric conversion part from a second side thereof. The method includes the steps of: forming an on-chip color filter and an on-chip microlens on the second side where light is incident; and forming an opening in a pad part on the second side where light is incident. | 11-12-2009 |
20090298220 | IMAGERS HAVING ELECTRICALLY ACTIVE OPTICAL ELEMENTS - A method of fabricating a CMOS image sensor comprising an array of active pixel cells. Each active pixel cell includes a substrate; a photosensing device formed at or below a substrate surface for collecting charge carriers in response to incident light; and, one or more light transmissive conductive wire structures formed above the photosensing device, the one or more conductive wire structures being located in an optical path above the photosensing device. The formed light transmissive conductive wire structures provide both an electrical and optical function. An optical function is provided by tailoring the thickness of the conductive wire layer to filter light according to a pixel color scheme. Alternately, the light transmissive conductive wire structures may be formed as a microlens structure providing a light focusing function. Electrical functions for the conductive wire layer include use as a capacitor plate, as a resistor or as an interconnect. | 12-03-2009 |
20090305453 | METHOD OF FABRICATING IMAGE SENSOR DEVICE - A method for fabricating an image sensor device is disclosed. A substrate having a sensing area comprising a pixel array therein is provided. A photoresist layer is coated over the substrate. Exposure is performed on at least two regions of the photoresist layer by at least two binary half-tone masks, respectively, in which a first and second binary half-tone masks of the two binary half-tone masks have different optical transparency distributions. Development is performed on the exposed photoresist layer to form a convex microlens array corresponding to the pixel array of the sensing area and comprising at least two microlenses with different convex profiles. | 12-10-2009 |
20090311820 | SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A solid-state imaging device having a high sensitivity and a structure in which a miniaturized pixel is obtained, and a method for manufacturing the solid-state imaging device in which an interface is stable, a spectroscopic characteristic is excellent and which can be manufactured with a high yield ratio are provided. The solid-state imaging device includes at least a silicon layer formed with a photo sensor portion and a wiring layer formed on the front-surface side of the silicon layer, and in which light L is made to enter from the rear-surface side opposite to the front-surface side of the silicon layer and the thickness of the silicon layer | 12-17-2009 |
20090317933 | Method of manufacturing a CMOS image sensor - In a method of manufacturing a complementary metal-oxide semiconductor (CMOS) image sensor (CIS), an epitaxial layer may be formed on a first substrate including a chip area and a scribe lane area. A first impurity layer may be formed adjacent to the first substrate by implanting first impurities into the epitaxial layer. A photodiode may be formed in the epitaxial layer on the chip area. A circuit element electrically connected to the photodiode may be formed on the epitaxial layer. A protective layer protecting the circuit element may be formed on the epitaxial layer. A second substrate may be attached onto the protective layer. The first substrate may be removed to expose the epitaxial layer. A color filter layer may be formed on the exposed epitaxial layer using the first impurity layer as an alignment key. A microlens may be formed over the color filter layer. | 12-24-2009 |
20090325337 | Band Gap Modulated Optical Sensor - A complementary metal-oxide-semiconductor (CMOS) optical sensor structure comprises a pixel containing a charge collection well of a same semiconductor material as a semiconductor layer in a semiconductor substrate and at least another pixel containing another charge collection well of a different semiconductor material than the material of the semiconductor layer. The charge collections wells have different band gaps, and consequently, generate charge carriers in response to light having different wavelengths. The CMOS sensor structure thus includes at least two pixels responding to light of different wavelengths, enabling wavelength-sensitive, or color-sensitive, capture of an optical data. | 12-31-2009 |
20090325338 | CMOS image sensor and method for fabricating the same - A CMOS image sensor that includes a semiconductor substrate with a plurality of photodiodes arranged at fixed intervals on the semiconductor substrate. A light-shielding layer partially overlapping the plurality of photodiodes and an insulating interlayer are formed on an entire surface of the semiconductor substrate including the plurality of photodiodes. A color filter layer having a plurality of color filters separated by a predetermined gap is formed on the insulating interlayer and a planarization layer is formed over the entire surface of the semiconductor substrate including the color filter layer. A plurality of microlenses are formed on the planarization layer in correspondence with the color filters of the color filter layer, wherein an additional structural layer, disposed between the color filter layer and the insulating interlayer, is provided to close a predetermined gap between the color filters of the color filter layer. | 12-31-2009 |
20100015748 | Image Sensor and Method for Manufacturing the Same - A method for manufacturing an image sensor includes forming first to third photodiodes and first to third color filters corresponding thereto; forming a photoresist film including photosensitive materials on the upper surfaces of the first to third color filters; forming a first exposed part by exposing the photoresist film with a first exposure energy using a first pattern mask with a first light transmitting part having a first width at boundaries between the individual color filters; forming a second exposed part overlapping a portion of the first exposed part by exposing the photoresist film with a second exposure energy smaller than the first exposure energy using a second pattern mask with a second light transmitting part having a second width wider than the first width; and forming microlenses by developing the photoresist film. | 01-21-2010 |
20100055823 | Methods of manufacturing CMOS image sensors - Complementary metal-oxide semiconductor (CMOS) image sensors (CIS) and methods of manufacturing the same are provided, the sensors include an epitaxial layer on a substrate in which a first, second, third and fourth region are defined. A photodiode may be formed at an upper portion of the epitaxial layer in the first region. A plurality of gate structures may be formed on the epitaxial layer in the second, third and fourth regions. A first blocking layer may be formed on the gate structures and the epitaxial layer in the first and second regions. A first impurity layer may be formed at an upper portion of the epitaxial layer adjacent to the gate structures in the second region, and a second impurity layer at upper portions of the epitaxial layer adjacent to the gate structures in the third and fourth regions. A color filter layer may be formed over the photodiode. A microlens may be formed on the color filter layer. | 03-04-2010 |
20100087029 | METHOD OF FABRICATING BACKSIDE ILLUMINATED IMAGE SENSOR - A method for fabricating a backside illuminated image sensor is provided. An exemplary method can include providing a substrate with a front surface and a back surface; forming a first alignment mark for global alignment on the front surface of the substrate; forming a second alignment mark for fine alignment in a clear-out region on the front surface of the substrate; aligning the substrate from the back surface using the first alignment mark; and removing a portion of the back surface of the substrate at the clear-out region for locating the second alignment mark. | 04-08-2010 |
20100136734 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed are methods of manufacturing a semiconductor device. The method of manufacturing one semiconductor device includes forming a transistor structure on a semiconductor substrate, forming a metal interconnection layer on the transistor structure, forming a protective layer on the metal interconnection layer, and implanting hydrogen ions into the semiconductor substrate having the protective layer by using a hydrogen ion implanter. Hydrogen ions are stably and effectively implanted into a selected region by using a hydrogen ion implanter in the manufacturing process of the semiconductor device, thereby facilitating the manufacturing process and improving the performance of the semiconductor device. | 06-03-2010 |
20100167455 | METHOD FOR FABRICATION OF CMOS IMAGE SENSOR - Disclosed is a method for fabrication of a CMOS image sensor capable of improving adhesion between an interlayer insulating film and photoresist. According to embodiments in this disclosure, the CMOS image sensor fabrication method may include: forming a plurality of photodiodes over a semiconductor substrate at regular intervals; forming an interlayer insulating film over the semiconductor substrate including the plurality of photodiodes; applying photoresist over the entirety of the interlayer insulating film; hard-baking the photoresist; conducting exposure and development of the photoresist to expose a part of the interlayer insulating film corresponding to the photodiodes, thereby completing a photoresist pattern; and using the photoresist pattern as a mask to selectively etch the exposed part of the interlayer insulating film. | 07-01-2010 |
20100197071 | Method of manufacturing semiconductor device - The method may include providing a first substrate, the first substrate including a sacrificial layer, an active layer having an image sensor circuit portion and an interconnection layer electrically connected to the image sensor circuit portion sequentially stacked; performing an edge-trimming process with respect to the first substrate to form an interconnection layer pattern, an active layer pattern and a sacrificial layer pattern; adhering the first substrate to a second substrate; removing the sacrificial layer pattern to expose the active layer pattern; and forming a transillumination layer to provide light to an image sensor portion on the active layer pattern. | 08-05-2010 |
20100203665 | Methods of manufacturing an image sensor having an air gap - In an example embodiment, the method of manufacturing an image sensor includes forming an interlayer dielectric (ILD) on a substrate. The substrate may have a plurality of pixels arranged thereon and each of the pixels includes a photoelectric conversion device configured to sense external light and generate photo charges. Furthermore, the method may include forming a metal on the ILD and removing portions of the metal to form a reflection pattern. Additionally, the method may include removing the ILD to a depth to form a trench adjacent to the reflection pattern and forming an air gap in the trench by forming oxide over the substrate such that the reflection pattern and the upper portion of the trench are covered. | 08-12-2010 |
20100203666 | SOLID STATE IMAGE DEVICE HAVING MULTIPLE PN JUNCTIONS IN A DEPTH DIRECTION, EACH OF WHICH PROVIDES AN OUTPUT SIGNAL - A solid-state image device is provided which has a semiconductor substrate, pixels A each containing a photoelectric conversion portion in which at least two PN junction parts are provide in a depth direction of the semiconductor substrate, pixels B each containing a photoelectric conversion portion in which at least one PN junction part is provided, first color filters provided above the pixels A, second color filters provided above the pixels B; and a detection mechanism for detecting a first color signal and a second color signal from the two PN junction parts of each of the pixels A and a third color signal from the PN junction part of each of the pixels B. According to the above solid-state image device, light can be more efficiently used than a color filter separation method, and superior color reproducibility to that of a three-well structure can be realized. | 08-12-2010 |
20100221865 | Crosstalk Improvement Through P On N Structure For Image Sensor - The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate having a first type of dopant; a semiconductor layer having a second type of dopant different from the first type of dopant and disposed on the semiconductor substrate; and an image sensor formed in the semiconductor layer. | 09-02-2010 |
20100227428 | Method and apparatus for manufacturing color image pickup device including a random array pattern and a regular array pattern - A method for manufacturing a color image pickup device including a pixel group in which a plurality of pixels each having a photoelectric conversion element and a color filter are arranged includes the steps of generating a random array pattern in which color filters of at least one color component are randomly arranged for an arbitrary pixel position, so that the occurrence frequency of color filters of a color component in a region having a predetermined size including the arbitrary pixel position is within a desired error range, generating a regular array pattern in which color filters of at least one color component are regularly arranged, and generating a color filter pattern by compositing in a regular manner the random array pattern generated in the random array generating step and the regular array pattern generated in the regular array generating step. | 09-09-2010 |
20100248414 | METHOD OF WAFER BONDING - Provided is a method of fabricating a semiconductor device. The method includes providing a device substrate having a front side, a back side, and a first edge portion, forming a material layer over a portion of the front side of the device substrate, trimming the first edge portion, removing the material layer, bonding the front side of the device substrate to a carrier substrate, thinning the device substrate from the back side, and trimming a second edge portion of the thinned device substrate. | 09-30-2010 |
20100261303 | Manufacturing method for solid state image pickup device - A method of manufacturing a solid state image pickup device including photoelectric conversion elements which are two-dimensionally arranged in a semiconductor substrate, and a color filter having a plurality of color filter patterns differing in color from each other and disposed on a surface of the semiconductor substrate according to the photoelectric conversion elements. The method includes successively subjecting a plurality of filter layers differing in color from each other to a patterning process to form the plurality of color filter patterns. At least one color filter pattern to be formed at first among the plurality of color filter patterns is formed by dry etching, and the rest of the plurality of the color filter pattern is formed by photolithography. | 10-14-2010 |
20100285630 | Method of manufacturing an image sensor having improved anti-reflective layer - In a method of manufacturing an image sensor, a photodiode may be formed in a light receiving region of a substrate having a first surface. A conductive wiring may be formed on the first surface of the substrate. After removing a portion of the substrate opposite to the first surface, an anti-reflective layer may be formed on a second surface of the substrate. The second surface may be opposite to the first surface. The anti-reflective layer and the light receiving region may be thermally treated to cure defects including dangling bonds in the substrate and to improve a refraction index of the anti-reflective layer. The image sensor may have an enhanced light transmittance and may produce high-definition images. | 11-11-2010 |
20100297804 | METHOD OF MAKING BACKSIDE ILLUMINATION IMAGE SENSOR - An exemplary method for making a backside illumination image sensor includes the follow steps. A substrate having a top surface is firstly provided. Secondly, many recesses are formed in the top surface. Thirdly, a light pervious layer is applied on the top surface. The light pervious layer has a plurality of filling portions received in the recesses. Then, an epitaxial silicon layer is applied on the light pervious layer. Next, many light sensitive regions and circuits are formed on the epitaxial silicon layer. Finally, the substrate is etched to expose the filling portions of the light pervious layer, thereby forming the backside illumination image sensor with the filling portions functioning as micro-lenses. | 11-25-2010 |
20100317142 | LIGHT GUIDE ARRAY FOR AN IMAGE SENSOR - An image sensor pixel that includes a photoelectric conversion unit supported by a substrate and an insulator adjacent to the substrate. The pixel includes a light guide that is located within an opening of the insulator and extends above the insulator such that a portion of the light guide has an air interface. The air interface improves the internal reflection of the light guide. Additionally, the light guide and an adjacent color filter are constructed with a process that optimizes the upper aperture of the light guide. These characteristics of the light guide eliminate the need for a microlens. | 12-16-2010 |
20100330728 | Method of aligning elements in a back-illuminated image sensor - A back-illuminated image sensor includes a sensor layer disposed between a circuit layer adjacent to a frontside of the sensor layer and a layer disposed on a backside of the sensor layer. One or more first alignment marks are formed in a layer in the circuit layer. A masking layer is aligned to the one or more first alignment marks. The masking layer includes openings that define locations for one or more second alignment marks. The one or more second alignment marks are then formed in or through the layer disposed on a backside of a sensor layer. One or more elements are formed in or on the backside of the sensor layer. The one or more elements are aligned to one or more second alignment marks. | 12-30-2010 |
20100330729 | PHOTOELECTRIC CONVERSION DEVICE, MANUFACTURING METHOD THEREOF AND SEMICONDUCTOR DEVICE - The present invention provides a photoelectric conversion device in which a leakage current is suppressed. A photoelectric conversion device of the present invention comprises: a first electrode over a substrate; a photoelectric conversion layer including a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode, wherein an end portion of the first electrode is covered with the first semiconductor layer; an insulating film, and a second electrode electrically connected to the third semiconductor film with the insulating film therebetween, over the insulating film, are formed over the third semiconductor film, and wherein a part of the second semiconductor layer and a part of the third semiconductor layer is removed in a region of the photoelectric conversion layer, which is not covered with the insulating film. | 12-30-2010 |
20110027936 | LIGHT GUIDE ARRAY FOR AN IMAGE SENSOR - An image sensor pixel that includes a photoelectric conversion unit supported by a substrate and an insulator adjacent to the substrate. The pixel includes a cascaded light guide that is located within an opening of the insulator and extends above the insulator such that a portion of the cascaded light guide has an air interface. The air interface improves the internal reflection of the cascaded light guide. The cascaded light guide may include a self-aligned color filter having air-gaps between adjacent color filters. These characteristics of the light guide eliminate the need for a microlens. Additionally, an anti-reflection stack is interposed between the substrate and the light guide to reduce backward reflection from the image sensor. Two pixels of having different color filters may have a difference in the thickness of an anti-reflection film within the anti-reflection stack. | 02-03-2011 |
20110045626 | Method for Fabricating Optical Device - A method for fabricating an optical device includes providing a semiconductor substrate having an element region and a peripheral region. The element region has an element array comprised of semiconductor elements formed therein. The peripheral region has at least a bonding pad electrically connected to the element array. A dielectric layer with an opening exposing the bonding pad is formed over the semiconductor substrate. A filter array and a planarizing layer are sequentially formed on the dielectric layer, and an organic layer is filled into the opening. An inorganic layer is formed on the planarizing layer and covers the organic layer. A portion of the inorganic layer and the organic layer are sequentially removed until the bonding pad is exposed. The organic layer protects the bonding pad from corrosion during the step removing the inorganic layer, and thus the fabrication yield is improved. | 02-24-2011 |
20110129955 | DELAMINATION AND CRACK RESISTANT IMAGE SENSOR STRUCTURES AND METHODS - A plurality of image sensor structures and a plurality of methods for fabricating the plurality of image sensor structures provide for inhibited cracking and delamination of a lens capping layer with respect to a planarizing layer within the plurality of image sensor structures. Particular image sensor structures and related methods include at least one dummy lens layer of different dimensions than active lens layer located over a circuitry portion of a substrate within the particular image sensor structures. Additional particular image sensor structures include at least one of an aperture within the planarizing layer and a sloped endwall of the planarizing layer located over a circuitry portion within the particular image sensor structures. | 06-02-2011 |
20110136290 | ETCHING METHODS AND METHODS OF MANUFACTURING A CMOS IMAGE SENSOR USING THE SAME - In an etching method, a thin layer is formed on a first surface of a first substrate doped with first impurities having a first doping concentration. The thin layer is doped with second impurities having a second doping concentration lower than the first doping concentration. A second substrate is formed on the thin layer. A second surface of the first substrate is polished. The polished first substrate is cleaned using a cleaning solution including ammonia and deionized water. The cleaned first substrate is etched to expose the thin layer. | 06-09-2011 |
20110159631 | METHOD OF FABRICATING BACKSIDE ILLUMINATED IMAGE SENSOR - A method for fabricating a backside illuminated image sensor is provided. An exemplary method can include providing a substrate having a front surface and a back surface; forming an alignment mark at the front surface of the substrate, wherein the alignment mark is detectable for alignment from the back surface; and processing the substrate from the back surface by performing registration from the back surface and using the alignment mark as a reference. | 06-30-2011 |
20110165723 | Solid-state imaging device and method of manufacturing solid-state imaging device - A solid state imaging device having a back-illuminated type structure in which a lens is formed on the back side of a silicon layer with a light-receiving sensor portion being formed thereon. Insulating layers are buried into the silicon layer around an image pickup region, with the insulating layer being buried around a contact layer that connects an electrode layer of a pad portion and an interconnection layer of the surface side. A method of manufacturing such a solid-state imaging device is also provided. | 07-07-2011 |
20110177646 | IMAGE SENSOR WITH IMPROVED COLOR CROSSTALK - An image sensor comprises a substrate of a first conductivity type. First and second pixels are arrayed over the substrate. A potential barrier is formed in a region of the substrate corresponding to the first pixel but not in a region of the substrate corresponding to the second pixel. The second pixel is responsive to a color having a wavelength longer than the color to which the first pixel is responsive. The potential barrier is doped with dopants by a high energy ion implantation dopants or by an ion implantation or diffusion during epitaxial growth of the P-type epitaxial layer. | 07-21-2011 |
20110189809 | ELEVATED POCKET PIXELS, IMAGING DEVICES AND SYSTEMS INCLUDING THE SAME AND METHOD OF FORMING THE SAME - An elevated photosensor for image sensors and methods of forming the photosensor. The photosensor may have light sensors having indentation features including, but not limited to, v-shaped, u-shaped, or other shaped features. Light sensors having such an indentation feature can redirect incident light that is not absorbed by one portion of the photosensor to another portion of the photosensor for additional absorption. In addition, the elevated photosensors reduce the size of the pixel cells while reducing leakage, image lag, and barrier problems. | 08-04-2011 |
20110207258 | METHOD FOR FORMING PAD IN WAFER WITH THREE-DIMENSIONAL STACKING STRUCTURE - A method for forming a pad in a wafer with a three-dimensional stacking structure includes: (a) a first process of bonding a device wafer and a handling wafer; (b) a second process of thinning a back side of an Si substrate which is formed on the device wafer, after the first process; (c) a third process of forming an anti-reflective layer and a PMD (preferential metal deposition) dielectric layer, after the second process; (d) a fourth process of forming vias on back sides of super contacts which are formed on the Si substrate, after the third process; and (e) a fifth process of forming a pad, after the fourth process. | 08-25-2011 |
20110212567 | METHOD OF FABRICATING IMAGE SENSOR AND REWORKING METHOD THEREOF - A method of fabricating an image sensor device is provided. First, a substrate comprising a pixel array region and a pad region is provided. A patterned metal layer and a first planarization layer having an opening exposing the patterned metal layer in the pad region are sequentially formed on the substrate. A color filter array is formed on the first planarization layer in the pixel array region. A second planarization layer is formed to cover the color filter array and filled into the opening. A plurality of microlens is formed above the color filter array on the second planarization layer. A capping layer is conformally formed on the microlens and the second planarization layer. An etching step is performed to remove the capping layer and the second planarization layer in the opening so as to expose the patterned metal layer in the pad region. | 09-01-2011 |
20110217807 | Image sensor array with conformal color filters - An image sensor pixel includes a photo-sensor region, a microlens, a first color filter layer, and a second color filter layer. The photo-sensor region is disposed within a semiconductor die. The microlens is disposed on the semiconductor die in optical alignment with the photo-sensor region. The first color filter layer is disposed between the photo-sensor region and the microlens. The second color filter layer is disposed on an opposite side of the microlens as the first color filter layer. | 09-08-2011 |
20110223707 | Backside Illuminated Image Sensor - A backside illuminated image sensor includes a substrate, a backside passivation layer disposed on backside of the substrate, and a transparent conductive layer disposed on the backside passivation layer. | 09-15-2011 |
20110250717 | SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A solid-state imaging device having a high sensitivity and a structure in which a miniaturized pixel is obtained, and a method for manufacturing the solid-state imaging device in which an interface is stable, a spectroscopic characteristic is excellent and which can be manufactured with a high yield ratio are provided. The solid-state imaging device includes at least a silicon layer formed with a photo sensor portion and a wiring layer formed on the front-surface side of the silicon layer, and in which light L is made to enter from the rear-surface side opposite to the front-surface side of the silicon layer and the thickness of the silicon layer | 10-13-2011 |
20110269258 | SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a solid-state imaging device in which: photo sensor portions are formed in a silicon layer over a substrate, a first conductivity type region being included in the photo sensor portions and a second conductivity type region being formed in the silicon layer implanted from a rear-surface of the solid-state imaging device by ion implantation; a wiring portion is formed above the silicon layer; and a supporting substrate is bonded to the wiring portion, wherein, the solid-state imaging device is configured for receiving incident light via the rear-surface of the solid-state imaging device. | 11-03-2011 |
20110294247 | SOLID-STATE IMAGING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A semiconductor element comprises: a semiconductor substrate; and an amorphous metal oxide film as a first film deposited on the semiconductor substrate. By providing the amorphous metal oxide film as the first film, a recess with a large aspect ratio can be filled. As a result, a void/crack-free film of excellent quality can be formed. | 12-01-2011 |
20110300662 | METHOD OF FORMING PATTERN AND METHOD OF PRODUCING SOLID-STATE IMAGE PICKUP DEVICE - Provided is a method of forming a pattern including the steps of forming a first pattern including a depressed or protruding alignment mark on a substrate; forming a flattening layer on the first pattern; removing a part of the flatting layer above the alignment mark; forming a processed layer on the flattening layer to cover the alignment mark; performing alignment by optically detecting a position of the alignment mark from above the processed layer, using light; and forming a second pattern by patterning the processed layer on the basis of the alignment. | 12-08-2011 |
20120003778 | MANUFACTURING METHOD FOR SOLID-STATE IMAGING DEVICE - A manufacturing method for a solid-state imaging device according to an embodiment of the present invention includes a step of forming a transparent resin layer above a principal surface of a semiconductor substrate, a step of exposing the transparent resin layer to light by using a grating mask having a first transmission region and a second transmission region having a higher transmittance of the light than the first transmission region in mutually separate positions, a step of forming first resin patterns and second resin patterns lower than the first resin patterns in mutually separate positions, and a step of forming first microlenses and second microlenses lower than the first microlenses. | 01-05-2012 |
20120009720 | BACKSIDE ILLUMINATED IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a backside illuminated image sensor, including forming a first isolation layer in a first semiconductor layer, such that the first isolation layer defines pixels of a pixel array in the first semiconductor layer, forming a second semiconductor layer on a first surface of the first semiconductor layer, forming a second isolation layer in the second semiconductor layer, such that the second isolation layer defines active device regions in the second semiconductor layer, forming photo detectors and circuit devices by implanting impurities into a first surface of the second semiconductor layer, the first surface of the second semiconductor layer facing away from the first semiconductor layer, forming a wiring layer on the first surface of the second semiconductor layer, and forming a light filter layer on a second surface of the first semiconductor layer. | 01-12-2012 |
20120034730 | Backside Illuminated Sensor Processing - The present disclosure provides methods and apparatus for reducing dark current in a backside illuminated semiconductor device. In one embodiment, a method of fabricating a semiconductor device includes providing a substrate having a frontside surface and a backside surface, and forming a plurality of sensor elements in the substrate, each of the plurality of sensor elements configured to receive light directed towards the backside surface. The method further includes forming a dielectric layer on the backside surface of the substrate, wherein the dielectric layer is formed to have a compressive stress to induce a tensile stress in the substrate. A backside illuminated semiconductor device fabricated by such a method is also disclosed. | 02-09-2012 |
20120100662 | METHOD OF MANUFACTURING SOLID-STATE IMAGE SENSOR - A method of manufacturing a solid-state image sensor, includes forming a color-filter layer including a plurality of color filters on a wiring structure arranged on a semiconductor substrate on which a plurality of photoelectric converters are formed, forming a photosensitive microlens material layer on the color-filter layer, and forming microlenses by forming a latent image on the microlens material layer by exposing the microlens material layer using a photomask having a transmitted light distribution corresponding to a density of light-shielding portions each having a size smaller than a resolution limit of an exposure apparatus, and developing the microlens material layer, wherein the color-filter layer has a surface step, and the microlens material layer has a surface step corresponding to the surface step of the color-filter layer. | 04-26-2012 |
20120202311 | METHOD OF MANUFACTURING IMAGE SENSOR - A method of manufacturing image sensor includes the following steps. A substrate having a first region and a second region is provided. A plurality of image sensing components and a periphery circuit are formed on the substrate in the first region and the second region respectively. A first conductive layer and a first dielectric layer are formed on the substrate. An etch stop layer is formed on the first dielectric layer. A second conductive layer is formed on the etch stop layer in the second region. A second dielectric layer is formed on the substrate. The second dielectric layer on the etch stop layer in the first region is etched to be removed. The etch stop layer in the first region is removed to form a space. A color filter array is disposed in the space. | 08-09-2012 |
20120244657 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - In a method for manufacturing a semiconductor device according to an embodiment, an epitaxial semiconductor layer is epitaxially grown on a semiconductor substrate, a photoelectric converting portion is formed on the epitaxial semiconductor layer, a wiring layer is formed on the epitaxial semiconductor layer after forming the photoelectric converting portion, a support substrate is bonded onto the wiring layer, and the semiconductor substrate is etched from an opposite surface side to a side for the bonding after the bonding. In the method for manufacturing a semiconductor device, an amorphous Si layer is formed on the opposite surface side of the epitaxial semiconductor layer after the etching and an antireflection film and a color filter are formed on the amorphous Si layer in sequence. | 09-27-2012 |
20120252155 | METHOD OF IMPLANTING IMPURITIES AND METHOD OF MANUFACTURING A COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) IMAGE SENSOR USING THE SAME - In a method of doping impurities, an amorphous layer is formed on a substrate. Impurities are implanted through a top surface of the amorphous layer to form a first doping region at an upper portion of the substrate. The first doping region and the amorphous layer are transformed into a second doping region and a recrystallized layer, respectively, by a laser annealing process. The recrystallized layer is removed. | 10-04-2012 |
20120252156 | SOLID-STATE IMAGING DEVICE HAVING PENETRATION ELECTRODE FORMED IN SEMICONDUCTOR SUBSTRATE - A solid-state imaging device includes an imaging element, an external terminal, an insulating film, a penetration electrode, a first insulating interlayer, a first electrode, and a first contact plug. The imaging element is formed on a first main surface of a semiconductor substrate. The external terminal is formed on a second main surface facing the first main surface of the substrate. The insulating film is formed in a through-hole formed in the substrate. The penetration electrode is formed on the insulating film in the through-hole and electrically connected to the external terminal. The first insulating interlayer is formed on the first main surface of the substrate and the penetration electrode. The first electrode is formed on the first insulating interlayer. The first contact plug is formed in the first insulating interlayer between the penetration electrode and the first electrode to electrically connect the penetration electrode and the first electrode. | 10-04-2012 |
20120252157 | IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME - Disclosed are an image sensor and a method of manufacturing the same. A metal wiring consisting of a lower metal wiring, an upper metal wiring, and a plug connecting the lower and upper metal wirings, in which the lower and upper metal wiring are made of a transparent conductive film pattern, is formed on a substrate with devices formed thereon, the devices including a photodiode and gate electrodes. Then, a passivation film, a color filter, and a microlens are sequentially formed on the metal wiring. All or a portion of the metal wiring is formed in a transparent conductive film pattern. As such, the metal wiring is formed on the photodiode. | 10-04-2012 |
20120258564 | METHOD TO AVOID FIXED PATTERN NOISE WITHIN BACKSIDE ILLUMINATED (BSI) COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) SENSOR ARRAY - The present disclosure provides one embodiment of a method. The method includes providing a semiconductor substrate having a front side and a backside, wherein the front side of the semiconductor substrate includes a plurality of backside illuminated imaging sensors; bonding a carrier substrate to the semiconductor substrate from the front side; thinning the semiconductor substrate from the backside; performing an ion implantation to the semiconductor substrate from the backside; performing a laser annealing process to the semiconductor substrate from the backside; and thereafter, performing a polishing process to the semiconductor substrate from the backside. | 10-11-2012 |
20120295389 | IMAGE SENSOR HAVING WAVE GUIDE AND METHOD FOR MANUFACTURING THE SAME - An image sensor having a wave guide includes a semiconductor substrate formed with a photodiode and a peripheral circuit region; an anti-reflective layer formed on the semiconductor substrate; an insulation layer formed on the anti-reflective layer; a wiring layer formed on the insulation layer and connected to the semiconductor substrate; at least one interlayer dielectric stacked on the wiring layer; and a wave guide connected to the insulation layer by passing through the interlayer dielectric and the wiring layer which are formed over the photodiode. | 11-22-2012 |
20120301996 | BACK SIDE ILLUMINATION IMAGE SENSOR REDUCED IN SIZE AND METHOD FOR MANUFACTURING THE SAME - A back side illumination image sensor reduced in chip size has a capacitor disposed in a vertical upper portion of a pixel region in the back side illumination image sensor in which light is illuminated from a back side of a subscriber, thereby reducing a chip size, and a method for manufacturing the back side illumination image sensor. The capacitor of the back side illumination image sensor reduced in chip size is formed in the vertical upper portion of the pixel region, not in the outside of a pixel region, so that the outside area of the pixel region for forming the capacitor is not required, thereby reducing a chip size. | 11-29-2012 |
20130034927 | LIGHT GUIDE ARRAY FOR AN IMAGE SENSOR - An image sensor pixel that includes a photoelectric conversion unit supported by a substrate and an insulator adjacent to the substrate. The pixel includes a cascaded light guide that is located within an opening of the insulator and extends above the insulator such that a portion of the cascaded light guide has an air interface. The air interface improves the internal reflection of the cascaded light guide. The cascaded light guide may include a self-aligned color filter having air-gaps between adjacent color filters. These characteristics of the light guide eliminate the need for a microlens. Additionally, an anti-reflection stack is interposed between the substrate and the light guide to reduce backward reflection from the image sensor. Two pixels of having different color filters may have a difference in the thickness of an anti-reflection film within the anti-reflection stack. | 02-07-2013 |
20130040416 | Method of fabricating an image sensor structure - A method for making the image sensor structure, for avoiding or mitigating lens shading effect. The image sensor structure includes a substrate, a sensor array disposed at the surface of the substrate, a dielectric layer covering the sensor array, wherein the dielectric layer includes a top surface having a dishing structure, an under layer filled into the dishing structure and having a refraction index greater than that of the dielectric layer, a filter array disposed on the under layer corresponding to the sensor array, and a microlens array disposed above the filter array. A top layer may be additionally disposed to cover the filter array and the microlens array is disposed on the top layer. | 02-14-2013 |
20130095594 | SOLID STATE IMAGING DEVICE AND FABRICATION METHOD FOR THE SAME - A solid state imaging device includes a circuit unit formed on a substrate and a photoelectric conversion unit. The photoelectric conversion circuit includes a lower electrode layer placed on the circuit unit, a compound semiconductor thin film of chalcopyrite structure which is placed on the lower electrode layer and functions as an optical absorption layer, and an optical transparent electrode layer placed on the compound semiconductor thin film. The lower electrode layer, the compound semiconductor thin film, and the optical transparent electrode layer are laminated one after another on the circuit unit. | 04-18-2013 |
20130102106 | IMAGE SENSOR MODULE AND METHOD OF MANUFACTURING THE SAME - An image sensor module includes a transparent substrate having recesses defined in a lower face thereof. A light concentration member includes transparent light concentration parts each of which are disposed in a corresponding one of the recesses. Color filters are disposed over each of the light concentration parts and photo diode units having photo diodes are disposed over each of the color filters. An insulation member covers the photo diode units and input/output terminals disposed over the insulation member are each electrically connected to a corresponding photo diode unit. | 04-25-2013 |
20130122634 | SOLID-STATE IMAGING DEVICE AND FABRICATION METHOD THEREOF - A fabrication method for solid-state imaging devices includes having circuitry formed on a substrate, forming a lower electrode layer on the circuitry, patterning the lower electrode layer to separate pixel-wise into a set of segments, and forming a compound-semiconductor thin film of charcopyrite structure over a whole area of element regions. A resist layer is applied on the compound-semiconductor thin film to pixel-wise pattern in accordance with the lower electrode layer as a base separated into the set of segments, and an ion doping is applied over a whole area of element regions, forming element separating regions in the compound-semiconductor thin film. The method includes removing the resist layer for exposure of surfaces of a set of compound-semiconductor thin films separated pixel-wise by the element separating regions. A transparent electrode layer is formed in a planarizing manner over a whole area of element regions. | 05-16-2013 |
20130130428 | METHOD OF MAKING A SPATIALLY SENSITIVE APPARATUS - A spectrometer for use with a desired wavelength range includes an array of filters. Each filter outputs at least two non-contiguous wavelength peaks within the desired wavelength range. The array of filters is spectrally diverse over the desired wavelength range, and each filter in the array of filters outputs a spectrum of a first resolution. An array of detectors has a detector for receiving an output of a corresponding filter. A processor receives signals from each detector, and outputs a reconstructed spectrum having a second resolution, the second resolution being higher than any of the first resolution of each filter. Filters and detectors may be arranged into a plurality of imaging units, each imaging unit including first and second filters and first and second photosensing regions. A processor receives signals from each imaging unit, and generates a reconstructed spatial image comprised of discrete spatial units corresponding to each imaging unit. | 05-23-2013 |
20130130429 | IMAGE SENSOR WITH IMPROVED COLOR CROSSTALK - An image sensor comprises a substrate of a first conductivity type. First and second pixels are arrayed over the substrate. A potential barrier is formed in a region of the substrate corresponding to the first pixel but not in a region of the substrate corresponding to the second pixel. The second pixel is responsive to a color having a wavelength longer than the color to which the first pixel is responsive. The potential barrier is doped with dopants by a high energy ion implantation dopants or by an ion implantation or diffusion during epitaxial growth of the P-type epitaxial layer. | 05-23-2013 |
20130149807 | Backside Illuminated CMOS Image Sensor - A backside illuminated CMOS image sensor comprises a photo active region formed over a substrate using a front side ion implantation process and an extended photo active region formed adjacent to the photo active region, wherein the extended photo active region is formed by using a backside ion implantation process. The backside illuminated CMOS image sensor may further comprise a laser annealed layer on the backside of the substrate. The extended photo active region helps to increase the number of photons converted into electrons so as to improve quantum efficiency. | 06-13-2013 |
20130203205 | Method for Fabricating Backside-Illuminated Sensors - A method for fabricating a backside-illuminated sensor includes providing a thin film semiconductor lamina having a first conductivity, and forming a doped region having a second conductivity within the lamina and at a front surface of the lamina. The lamina may be provided as a free-standing lamina, or may be provided as a semiconductor donor body from which the lamina is cleaved. An electrical connection is formed to the doped region. A temporary carrier is contacted to the back surface of the semiconductor and later removed. A backside-illuminated sensor is fabricated from the semiconductor lamina, in which the thickness of the semiconductor lamina remains substantially unchanged during the fabrication process. | 08-08-2013 |
20130224897 | LIGHT TRANSMISSION MEMBER, IMAGE PICKUP DEVICE, AND METHOD OF MANUFACTURING SAME - A method of forming a light transmission member includes a plurality of processes to form a plurality of sections of the light transmission member. Notably, after a first class process to form light transmission portions having narrow-band light transmission properties in a first class section group, a second class process is performed to form light transmission portions in a second class section group, and a fourth class process is performed to form light transmission portions having wide-band light transmission properties in a first section. | 08-29-2013 |
20130230941 | Implanting Method for Forming Photodiode - An implanting method for forming a photodiode comprises providing a substrate with a first conductivity, growing an epitaxial layer on the substrate, implanting ions with a second conductivity in the epitaxial layer from a front side of the substrate and implanting ions with the first conductivity in the epitaxial layer from the front side of the substrate to form a photo active region adjacent to the front side and a photo inactive region underneath the photo active region. By employing the implanting method, an average doping density of the photo active region is approximately ten times more than an average doping density of the photo inactive region. | 09-05-2013 |
20130237004 | Backside Illuminated Image Sensor - A backside illuminated image sensor includes a substrate, a backside passivation layer disposed on backside of the substrate, and a transparent conductive layer disposed on the backside passivation layer. | 09-12-2013 |
20130244368 | BACKSIDE DEPLETION FOR BACKSIDE ILLUMINATED IMAGE SENSORS - A backside illuminated image sensor is provided which includes a substrate having a front side and a backside, a sensor formed in the substrate at the front side, the sensor including at least a photodiode, and a depletion region formed in the substrate at the backside, a depth of the depletion region is less than 20% of a thickness of the substrate. | 09-19-2013 |
20130273686 | Image Sensor Manufacturing Methods - Semiconductor devices and back side illumination (BSI) sensor manufacturing methods are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes providing a workpiece and forming an integrated circuit on a front side of the workpiece. A grid of a conductive material is formed on a back side of the workpiece using a damascene process. | 10-17-2013 |
20130280849 | Image Sensor Isolation Region and Method of Forming the Same - Image sensors comprising an isolation region according to embodiments are disclosed, as well as methods of forming the image sensors with isolation region. An embodiment is a structure comprising a semiconductor substrate, a photo element in the semiconductor substrate, and an isolation region in the semiconductor substrate. The isolation region is proximate the photo element and comprises a dielectric material and an epitaxial region. The epitaxial region is disposed between the semiconductor substrate and the dielectric material. | 10-24-2013 |
20130288420 | FABRICATING METHOD OF SEMICONDUCTOR DEVICE - A method of making a semiconductor device includes forming wiring on a first surface of a first substrate, removing a portion of a second surface of the first substrate to reduce a thickness of the first substrate, forming an oxide film on the second surface of the first substrate based on an oxidation process performed within a temperature range, and removing the oxide film. The temperature range may be below a melting temperature of the wiring, and the oxide film is formed to a depth that includes one or more defects below the second surface of the first substrate. Removal of the oxide film results in removing a portion of the first substrate that includes the one or more effects. | 10-31-2013 |
20130323875 | Methods of forming a through via structure - Methods of manufacturing an integrated circuit device including a through via structure are provided. The methods may include forming an isolation trench through a substrate to form an inner substrate, which is enclosed by the isolation trench and forming an insulating layer in the isolation trench and on a surface of the substrate. The methods may also include forming a hole, which is spaced apart from the isolation trench and passes through a portion of the insulating layer formed on the surface of the substrate and the inner substrate and forming a conductive layer in the hole and on the insulating layer formed on the surface of the substrate. The methods may be used to manufacture image sensors. | 12-05-2013 |
20130344639 | BACKSIDE ILLUMINATED ACTIVE PIXEL SENSOR ARRAY, METHOD OF MANUFACTURING THE SAME, AND BACKSIDE ILLUMINATED IMAGE SENSOR INCLUDING THE SAME - A backside-illuminated active pixel sensor array in which crosstalk between adjacent pixels is prevented, a method of manufacturing the backside-illuminated active pixel sensor array, and a backside-illuminated image sensor including the backside-illuminated active pixel sensor array are provided. The backside-illuminated active pixel sensor array includes a semiconductor substrate of a first conductive type that comprises a front surface and a rear surface, light-receiving devices for generating charges in response to light incident via the rear surface, and one or more pixel isolating layers for forming boundaries between pixels by being disposed between the adjacent light-receiving devices, a wiring layer disposed on the front surface of the semiconductor substrate, and a light filter layer disposed on the rear surface of the semiconductor substrate, wherein a thickness of the one or more pixel isolating layers decreases from a point in the semiconductor substrate toward the rear surface. | 12-26-2013 |
20130344640 | Method of Making Wafer Structure for Backside Illuminated Color Image Sensor - An integrated circuit device is provided. The integrated circuit device can include a substrate; a first radiation-sensing element disposed over a first portion of the substrate; and a second radiation-sensing element disposed over a second portion of the substrate. The first portion comprises a first radiation absorption characteristic, and the second portion comprises a second radiation absorption characteristic different from the first radiation absorption characteristic. | 12-26-2013 |
20140011316 | METHOD OF FABRICATING A SEMICONDUCTOR DEVICE - Provided is a semiconductor device having a backside illuminated image sensor and a method of forming same. The method includes providing a first substrate and a second substrate, forming metal interconnections on a first surface of the first substrate, forming a filling insulating layer filling spaces between sides of the metal interconnections and covering upper surfaces of the metal interconnections, forming a buffer insulating layer softer than the filling insulating layer on the filling insulating layer, forming a capping insulating layer denser than the buffer insulating layer on the buffer insulating layer, and bonding a surface of the capping insulating layer to a surface of the second substrate. | 01-09-2014 |
20140030842 | BACKSIDE ILLUMINATED IMAGE SENSOR HAVING CAPACITOR ON PIXEL REGION - An approach is provided for forming a backside illuminated image sensor that includes a semiconductor substrate having a front side and backside, a sensor element formed overlying the frontside of the semiconductor substrate, and a capacitor formed overlying the sensor element. | 01-30-2014 |
20140045294 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A substrate includes a first region having photoelectric conversion portions and a second region having an element included in a signal processing circuit. An insulator including first and second parts respectively arranged on the first and second regions is formed on the substrate. Openings are formed in the insulator and respectively superposed on the photoelectric conversion portions. A first member is formed in the openings and on the second part of the insulator after forming the openings. At least a portion of the first member arranged on the second region is removed. The first member is planarized after removing at least the portion of the first member. A second insulator is formed on the first and second regions after planarizing the first member. A through-hole is formed in a part of the second insulator. No planarization with grinding is performed after forming the second insulator and before forming the through-hole. | 02-13-2014 |
20140073080 | Back Side Defect Reduction for Back Side Illuminated Image Sensor - Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor also includes a radiation-detection device that is formed in the substrate. The radiation-detection device is operable to detect a radiation wave that enters the substrate through the back side. The image sensor further includes a recrystallized silicon layer. The recrystallized silicon layer is formed on the back side of the substrate. The recrystallized silicon layer has different photoluminescence intensity than the substrate. | 03-13-2014 |
20140120653 | BACKSIDE ILLUMINATION (BSI) CMOS IMAGE SENSOR PROCESS - A backside illumination (BSI) CMOS image sensing process includes the following steps. A substrate having an active side is provided. A curving process is performed to curve the active side. A reflective layer is formed on the active side, so that at least a curved mirror is formed on the active side. | 05-01-2014 |
20140199801 | MANUFACTURING METHOD OF SOLID-STATE IMAGING APPARATUS - A color filter | 07-17-2014 |
20140199802 | MANUFACTURING METHOD OF SOLID-STATE IMAGING APPARATUS - To realize simplification of a process of forming hollow portions in a solid-state imaging apparatus, a plurality of light receiving portions is formed on a semiconductor substrate, and color filter layers as hollow portion forming layers are formed above the semiconductor substrate (FIG. | 07-17-2014 |
20140199803 | SOLID STATE IMAGE PICKUP APPARATUS AND METHOD FOR MANUFACTURING THE SAME - When forming a hollow portion between each color filter, in order to realize the formation of the hollow portions with a narrower width, a plurality of light receiving portions are formed on the upper surface of a semiconductor substrate, a plurality of color filters corresponding to each of the light receiving portions are formed above the semiconductor substrate, a photoresist is formed on each color filter, side walls are formed on the side surfaces of the photoresist, and a hollow portion is formed between each color filter by performing etching using at least the side walls as a mask. | 07-17-2014 |
20140199804 | SEMICONDUCTOR DEVICE HAVING A BONDING PAD AND SHIELD STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A method of fabricating a semiconductor device includes providing a device substrate having a front side and a back side corresponding to a front side and a back side of the semiconductor device, forming, on the front side of the device substrate, a metal feature, forming, on the back side of the device substrate, an insulating layer, forming, on the back side of the semiconductor device, a trench exposing the metal feature, forming a bonding pad in the trench in electrical communication with the metal feature, and forming, on the insulating layer, a metal shield, in which the metal shield and the bonding pad have different thicknesses relative to each other. | 07-17-2014 |
20140213011 | METHOD OF MANUFACTURING CMOS IMAGE SENSOR - A CIS and a method of manufacturing the same, the CIS including a substrate having a first surface and second surface opposite thereto, the substrate including an APS array region including a photoelectric transformation element and a peripheral circuit region; an insulating interlayer on the first surface of the substrate and including metal wirings electrically connected to the photoelectric transformation element; a light blocking layer on the peripheral circuit region of the second surface of the substrate, exposing the APS array region, and including a plurality of metal wiring patterns spaced apart from one another to form at least one drainage path along a boundary region between the APS array region and the peripheral circuit region; a color filter layer on the second surface of the substrate covering the APS array region and the light blocking layer; and a microlens on the color filter layer on the APS array region. | 07-31-2014 |
20140213012 | METHOD AND SYSTEM FOR IMAGE SENSOR AND LENS ON A SILICON BACK PLANE WAFER - A method for forming image sensors includes providing a substrate and forming a plurality of photo diode regions, each of the photo diode regions being spatially disposed on the substrate. The method also includes forming an interlayer dielectric layer overlying the plurality of photo diode regions, forming a shielding layer formed overlying the interlayer dielectric layer, and applying a silicon dioxide bearing material overlying the shielding layer. The method further includes etching portions of the silicon dioxide bearing material to form a plurality of first lens structures, and continuing to form each of the plurality of first lens structures to provide a plurality of finished lens structures. | 07-31-2014 |
20140235008 | BACK SIDE ILLUMINATION (BSI) SENSORS, MANUFACTURING METHODS THEREOF, AND SEMICONDUCTOR DEVICE MANUFACTURING METHODS - Back side illumination (BSI) sensors, manufacturing methods thereof, and semiconductor device manufacturing methods are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes providing a workpiece having a front side and a back side opposite the front side. An integrated circuit is formed on the workpiece, and a first insulating material is formed on the back side of the workpiece. A second insulating material is formed over the first insulating material. The second insulating material is patterned to form a grid on the back side of the workpiece. | 08-21-2014 |
20140349439 | ELECTRONIC DEVICE, METHOD OF MANUFACTURING THE SAME, AND CAMERA - A method of manufacturing an electronic device includes forming a structure including a member, and a first film arranged on at least a surface of the member, the member including an insulating film, a passivation film arranged on the insulating film and having an upper surface, and a trench positioned from the passivation film to the insulating film; forming a second film to cover the first film; and patterning the second film by a photolithography process using a photomask. In the forming the second film, an alignment mark including a concave portion corresponding to the trench is formed in a region above the trench in the second film. In the patterning the second film, the photomask is aligned with the structure by using the alignment mark. | 11-27-2014 |
20150056741 | METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS - A method of manufacturing a semiconductor apparatus comprising forming an electrode on a structure provided on a substrate, the structure including a wiring pattern and an interlayer insulation film, forming a first film covering the electrode and the structure, forming an opening in a portion of the first film inside an outer edge of a convex portion formed by steps between upper faces of the electrode and the structure so as to expose a first portion as a portion of the upper face of the electrode, forming a second film covering the first film and the first portion, forming a protective film covering the first portion, the convex portion, and a periphery of the convex portion by patterning the second film, and forming a third film on the first film and the protective film by spin coating. | 02-26-2015 |
20150087104 | MECHANISMS FOR FORMING BACKSIDE ILLUMINATED IMAGE SENSOR DEVICE STRUCTURE - Embodiments of mechanisms of a backside illuminated image sensor device structure are provided. The method for manufacturing a backside illuminated image sensor device structure includes providing a substrate and forming a polysilicon layer over the substrate. The method further includes forming a buffer layer over the polysilicon layer and forming an etch stop layer over the buffer layer. The method further includes forming a hard mask layer over the etch stop layer and patterning the hard mask layer to form an opening in the hard mask layer. The method further includes performing an implant process through the opening of the hard mask layer to form a doped region in the substrate and removing the hard mask layer by a first removing process. The method further includes removing the etch stop layer by a second removing process and removing the buffer layer by a third removing process. | 03-26-2015 |
20150111334 | METHOD OF MAKING BACKSIDE ILLUMINATED IMAGE SENSORS - A method of making a backside illuminated image sensor includes forming a first isolation structure in a pixel region of a substrate, where a bottom of the first isolation structure is exposed at a back surface of the substrate. The method further includes forming a second isolation structure in a peripheral region of the substrate, where the second isolation structure has a depth less than a depth of the first isolation structure. Additionally, the method includes forming an implant region adjacent to at least a portion of sidewalls of the first isolation structure, where the portion of the sidewalls is located closer to the back surface than a front surface of the substrate, and where the second isolation structure is free of the implant region. | 04-23-2015 |
20150318327 | BACKSIDE ILLUMINATED COLOR IMAGE SENSORS AND METHODS FOR MANUFACTURING THE SAME - A method for manufacturing a backside illuminated color image sensor includes (a) modifying the frontside of an image sensor wafer, having pixel arrays, to produce electrical connections to the pixel arrays, wherein the electrical connections extend depth-wise into the image sensor wafer from the frontside, and (b) modifying the backside of the image sensor wafer to expose the electrical connections. | 11-05-2015 |
20150340516 | FRONT SHEET OF SOLAR CELL, METHOD OF MANUFACTURING THE SAME AND PHOTOVOLTAIC MODULE COMPRISING THE SAME - A front sheet of solar cell, a method of manufacturing the same and a photovoltaic module are provided. The front sheet of solar cell can effectively block infrared rays (IRs) by forming an IR blocking layer including a cholesteric liquid crystal (CLC) material on a substrate. Thus, an increase in temperature of a cell can be suppressed so that the power generation efficiency of the cell can be improved. Also, the multi-layered sheet can be configured so that a UV blocking layer including a fluorine-based polymer and a wavelength conversion material can be formed on the IR blocking layer. Thus, wavelengths of a UV region can be converted into wavelengths of a VR region so that the power generation efficiency of the cell can be improved, and discoloration and deformation caused by UVs can be prevented so that the weather resistance can be improved. | 11-26-2015 |
20160013355 | METHOD OF PRODUCING A RADIATION SENSOR SEMICONDUCTOR DEVICE COMPRISING A MULTIPLE COLOR FILTER | 01-14-2016 |
20160043133 | MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - A solid-state imaging element has problems of occurrence of dark current due to influences of an interface state at an interface between a semiconductor and an insulating film, e.g., between silicon and silicon oxide, and of charges generated in a device manufacturing process, which leads to signal noise, thereby degrading the function of a device, specifically, the imaging quality. The outline of the invention in the present application relates to a manufacturing method of a semiconductor integrated circuit device with a surface-irradiation type image sensor, which includes irradiating a main surface of a semiconductor wafer with photodiodes formed therein, with far-ultraviolet ray after forming a lowermost wiring layer of a multi-layer wiring and before forming a color filter layer, and then applying a heat treatment to the wafer. | 02-11-2016 |
20160079288 | METHODS OF FORMING AN IMAGE SENSOR - Methods of forming an image sensor are provided. A method of forming an image sensor includes forming a trench in a substrate to define a unit pixel region of the substrate. The method includes forming an in-situ-doped passivation layer on an exposed surface of the trench. The method includes forming a capping pattern on the in-situ-doped passivation layer, in the trench. The method includes forming a photoelectric conversion region in the unit pixel region. Moreover, the method includes forming a floating diffusion region in the unit pixel region. | 03-17-2016 |
20160093662 | BACK SIDE ILLUMINATION PHOTODIODE OF HIGH QUANTUM EFFICIENCY - A back side illumination photodiode includes a light-receiving back side surface of a semiconductor material substrate. An area of the light-receiving back side surface includes a recess. The recess is filled with a material having an optical index that is lower than an optical index of the semiconductor material substrate. Both the substrate and the filling material are transparent to an operating wavelength of the photodiode. The recess may be formed to have a ring shape. | 03-31-2016 |
20160111464 | Image Sensor Device and Method - A system and method for reducing cross-talk between photosensitive diodes is provided. In an embodiment a first color filter is formed over a first photosensitive diode and a second color filter is formed over a second photosensitive diode, and a gap is formed between the first color filter and the second color filter. The gap will serve to reflect light that otherwise would have crossed from the first color filter to the second color filter, thereby reducing cross-talk between the first photosensitive diode and the second photosensitive diode. A reflective grid may also be formed between the first photosensitive diode and the second photosensitive diode in order to assist in the reflection and further reduce the amount of cross-talk. | 04-21-2016 |
20160111465 | STRUCTURE OF DIELECTRIC GRID FOR A SEMICONDUCTOR DEVICE - A method of forming an image sensor device is disclosed. The method includes providing a substrate having sensor elements in a pixel region and having no sensor elements in a non-pixel region. The method further includes forming metal pillars over the pixel region and a metal shield layer over the non-pixel region. The metal pillars are disposed above spaces between adjacent sensor elements. The method further includes depositing a dielectric layer over the metal pillars and the metal shield layer; and etching the dielectric layer to form first and second trenches. The first trenches are formed over the pixel region and the second trenches are formed over the non-pixel region. Each of the first trenches aligns to a respective sensor element and is surrounded by the dielectric layer at its bottom and sidewall surfaces. | 04-21-2016 |
20160126277 | IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME - An image sensor includes a substrate including two or more photoelectric conversion regions corresponding to two or more pixels, respectively, two or more color filters formed on the substrate corresponding to the photoelectric conversion regions, an interlayer insulation layer including an interconnection line and formed on the substrate, two or more condensing patterns each having a plurality of high refractive index regions and a plurality of low refractive index regions, which are alternately disposed, wherein line widths of the high and low refractive index regions are different in the respective condensing patterns depending on the pixels. | 05-05-2016 |
20160133667 | SOLID STATE IMAGE PICKUP APPARATUS AND METHOD FOR MANUFACTURING THE SAME - When forming a hollow portion between each color filter, in order to realize the formation of the hollow portions with a narrower width, a plurality of light receiving portions are formed on the upper surface of a semiconductor substrate, a plurality of color filters corresponding to each of the light receiving portions are formed above the semiconductor substrate, a photoresist is formed on each color filter, side walls are formed on the side surfaces of the photoresist, and a hollow portion is formed between each color filter by performing etching using at least the side walls as a mask. | 05-12-2016 |
20160155771 | Grids in Backside Illumination Image Sensor Chips and Methods for Forming the Same | 06-02-2016 |
20160172391 | Methods of Fabricating Image Sensors Having Deep Trenches Including Negative Charge Material | 06-16-2016 |
20160172392 | MECHANISMS FOR FORMING BACKSIDE ILLUMINATED IMAGE SENSOR DEVICE STRUCTURE | 06-16-2016 |
20160172417 | Semiconductor Image Sensor Device Having Back Side Illuminated Image Sensors with Embedded Color Filters | 06-16-2016 |