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Including integrally formed optical element (e.g., reflective layer, luminescent layer, etc.)

Subclass of:

438 - Semiconductor device manufacturing: process

438048000 - MAKING DEVICE OR CIRCUIT RESPONSIVE TO NONELECTRICAL SIGNAL

438057000 - Responsive to electromagnetic radiation

Patent class list (only not empty are listed)

Deeper subclasses:

Class / Patent application numberDescriptionNumber of patent applications / Date published
438072000 Having reflective or antireflective component 132
438070000 Color filter 86
438071000 Specific surface topography (e.g., textured surface, etc.) 77
Entries
DocumentTitleDate
20100009494Dye-Sensitized Solar Cell and Fabrication Method Thereof - Disclosed is a dye-sensitized solar cell with enhanced photoelectric conversion efficiency. The dye-sensitized solar cell includes a first electrode of a light transmission material, a second electrode facing the first electrode, and a dye-absorbed porous layer formed on the first electrode. An electrolyte is injected between the first and the second electrodes. The porous layer contains first and second materials differing from each other in conduction band energy level.01-14-2010
20130078755METHOD OF MANUFACTURING THIN FILM SOLAR CELLS - A method for manufacturing thin film solar cells, includes forming a light permeable first electrode layer in the back light surface of a glass substrate, and formed in the first electrode layer a plurality of first openings for exposing a part of the back light surface therefrom; forming a photoelectric conversion layer on the first electrode layer and the exposed back light surface, and forming a plurality of second openings in the photoelectric conversion layer for exposing a part of the first electrode layer therefrom; and forming a glistening second electrode layer having a plurality of third openings formed therein, wherein the second electrode layer comprises a conductive colloid comprised of non-diffractive fillings and polymeric base material.03-28-2013
20090305452Methods of Making Quantum Dot Films - Optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit an array of conductive regions; and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a method of forming a nanocrystalline film includes fabricating a plurality of nanocrystals having a plurality of first ligands attached to their outer surfaces; exchanging the first ligands for second ligands of different chemical composition than the first ligands; forming a film of the ligand-exchanged nanocrystals; removing the second ligands; and fusing the cores of adjacent nanocrystals in the film to form an electrical network of fused nanocrystals. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused.12-10-2009
20120225516METHOD FOR FABRICATING IMAGE SENSOR - A method for fabricating an image sensor is provided. A substrate is provided, and then a plurality of photoresist patterns is formed on the substrate. The photoresist patterns are arranged in a first array, wherein a top view of each photoresist pattern has a substantially square shape and a distance between two neighboring photoresist patterns decreases from a center of the first array toward an edge of the first array. Then, a thermal reflow step is performed to convert the photoresist patterns into a plurality of microlenses arranged in a second array.09-06-2012
20120225515LASER DOPING TECHNIQUES FOR HIGH-EFFICIENCY CRYSTALLINE SEMICONDUCTOR SOLAR CELLS - Various laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.09-06-2012
20130065349Deposition of Germanium Film - A method for forming a photodetector device includes forming waveguide feature on a substrate, and forming a photodetector feature including a germanium (Ge) film, the Ge film deposited on the waveguide feature using a plasma enhanced chemical vapor deposition (PECVD) process, the PECVD process having a deposition temperature from about 500° C. to about 550° C., and a deposition pressure from about 666.612 Pa to about 1066.579 Pa.03-14-2013
20130164877ISOLATION STRUCTURES FOR GLOBAL SHUTTER IMAGER PIXEL, METHODS OF MANUFACTURE AND DESIGN STRUCTURES - Pixel sensor cells, e.g., CMOS optical imagers, methods of manufacturing and design structures are provided with isolation structures that prevent carrier drift to diffusion regions. The pixel sensor cell includes a photosensitive region and a gate adjacent to the photosensitive region. The pixel sensor cell further includes a diffusion region adjacent to the gate. The pixel sensor cell further includes an isolation region located below a channel region of the gate and about the photosensitive region, which prevents electrons collected in the photosensitive region to drift to the diffusion region.06-27-2013
20110281391PHOTOELECTRIC CONVERSION DEVICE AND FABRICATION METHOD THEREFOR - A photoelectric conversion device comprises a high-refractive-index portion at a position close to a photoelectric conversion element therein. And, the high-refractive-index portion has first and second horizontal cross-section surfaces. The first cross-section surface is at a position closer to the photoelectric conversion element rather than the second cross-section surface, and is larger than an area of the second cross-section surface, so as to guide an incident light into the photoelectric conversion element without reflection.11-17-2011
20110143482SUSPENDED GERMANIUM PHOTODETECTOR FOR SILICON WAVEGUIDE - A vertical stack of a first silicon germanium alloy layer, a second epitaxial silicon layer, a second silicon germanium layer, and a germanium layer are formed epitaxially on a top surface of a first epitaxial silicon layer. The second epitaxial silicon layer, the second silicon germanium layer, and the germanium layer are patterned and encapsulated by a dielectric cap portion, a dielectric spacer, and the first silicon germanium layer. The silicon germanium layer is removed between the first and second silicon layers to form a silicon germanium mesa structure that structurally support an overhanging structure comprising a stack of a silicon portion, a silicon germanium alloy portion, a germanium photodetector, and a dielectric cap portion. The germanium photodetector is suspended by the silicon germanium mesa structure and does not abut a silicon waveguide. Germanium diffusion into the silicon waveguide and defect density in the germanium detector are minimized.06-16-2011
20110287569Solid-state imaging device, method of producing the same, and camera - To provide a solid-state imaging device able to improve light transmittance of a transparent insulation film in a light incident side of a substrate, suppress the dark current, and prevent a quantum efficiently loss, wherein a pixel circuit is formed in a first surface of the substrate and light is received from a second surface, and having: a light receiving unit formed in the substrate and for generating a signal charge corresponding to an amount of incidence light and storing it; a transparent first insulation film formed on the second surface; and a transparent second insulation film formed on the first insulation film and for retaining a charge having the same polarity as the signal charge in an interface of the first insulation film or in inside, thicknesses of the first and second insulation film being determined to obtain a transmittance higher than when using only the first insulation film.11-24-2011
20090075417SOLID-STATE IMAGING DEVICE AND METHOD FOR PRODUCING THE SAME - In the solid-state imaging device of the present invention having a photoelectric conversion section and a charge transfer section equipped with a charge transfer electrode for transferring an electric charge generated in the photoelectric conversion section, the charge transfer electrode has an alternate arrangement of a first layer electrode comprising a first layer electrically conducting film and a second layer electrode comprising a second layer electrically conducting film, which are formed on a gate oxide film comprising a laminate film consisting of a silicon oxide film and a metal oxide thin film, and the first layer electrode and the second layer electrode are separated by insulation with an interelectrode insulating film comprising a sidewall insulating film formed by a CVD process to cover the lateral wall of the first layer electrode.03-19-2009
20120034729MANUFACTURING METHOD FOR LIGHT-SENSING STRUCTURE - A manufacturing method for manufacturing a light-sensing structure is provided. The manufacturing method includes the steps as follows. (a) A circuit layer is formed on an upper surface of a first substrate, wherein the first substrate includes at least one light-sensing device and the circuit layer includes at least one device structure and at least one release feature that is made of metal and is formed on part of the light-sensing device and the device structure. (b) A first light-filtering layer is formed on part of the circuit layer. (c) The release feature is removed by a wet-etching process.02-09-2012
20100099214CONSUMABLE ADHESIVE LAYER FOR THIN FILM PHOTOVOLTAIC MATERIAL - A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate comprising a surface region. The method forms a first electrode layer overlying the surface region of the transparent substrate. The method also forms a thin layer of indium material, using a sputtering target of indium material, overlying the first electrode layer to act as an intermediary glue layer to facilitate attachment to the first electrode layer. In a specific embodiment, the method forms a copper material overlying the thin layer of indium material. The method also forms an indium layer overlying the copper material to form a multi layered structure including at least the thin layer of indium material, copper material, and the indium layer. In a preferred embodiment, the multi-layered structure has a first thickness. In a specific embodiment, the method also subjects at least the multi-layered structure to thermal treatment process in an environment containing a sulfur bearing species to form a copper indium disulfide alloy material while consuming substantially all of the indium layer from at least the treatment process of the multi-layered structure. In a preferred embodiment, the copper indium disulfide alloy material comprises an atomic ratio of copper indium ranging from about 1.35 to about 3.00. In a specific embodiment, the copper indium disulfide alloy material has a second thickness of more than two times of the first thickness of the multi-layered structure. The method consumes substantially all of the thin layer of indium material into a portion of the copper indium disulfide alloy material during at least the thermal treatment process. The method causes formation of a copper sulfide material overlying the copper indium disulfide alloy material during at least the thermal treatment process.04-22-2010
20110201144METHOD OF MANUFACTURING AN OPTICAL MEMBER HAVING STACKED HIGH AND LOW REFRACTIVE INDEX LAYERS - A method of making an optical member including high refractive index layers and low refractive index layers, which are each relatively thin as compared with an optical length, and disposed alternately in the lateral direction with respect to an optical axis. Each width of the high refractive index layers and the low refractive index layers is equal to or smaller than the wavelength order of incident light.08-18-2011
20080206919METHOD OF MANUFACTURE OF A MICROLENS STRUCTURE FOR OPTO-ELECTRIC SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor material substrate, an opto-electric component formed on the substrate, and a first transparent layer formed on an upper surface of the substrate over the component, the layer having a planar upper surface with a cavity formed therein. The first transparent layer has a selected thickness and a first index of refraction. The semiconductor device further includes a lens having a second index of refraction, the lens being formed in the cavity by flowing a flowable dielectric over the substrate. An upper surface of the lens and the upper surface of the transparent layer may be coplanar, or alternatively, they may lie in separate planes. The semiconductor device may also include a second transparent layer formed over the first layer and lens, as a passivation layer.08-28-2008
20090104729SOLID-STATE IMAGE SENSOR AND IMAGING SYSTEM - At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring layer cross section to reduce dark currents and 1/f noise.04-23-2009
20080293180PHOTONIC CRYSTAL-BASED LENS ELEMENTS FOR USE IN AN IMAGE SENSOR - The invention, in various exemplary embodiments, incorporates a photonic crystal lens element into an image sensor. The photonic crystal lens element comprises a substrate and a plurality of pillars forming a photonic crystal structure over the substrate. The pillars are spaced apart from each other. Each pillar has a height and a horizontal cross sectional shape. A material with a different dielectric constant than the pillars is provided within the spacing between the pillars. The photonic crystal element can be a lens configured to focus electromagnetic radiation onto an underlying pixel cell.11-27-2008
20090181490IMAGE SENSING DEVICES AND METHODS FOR FABRICATING THE SAME - Image sensing devices and methods for fabricating the same are provided. An exemplary image sensing device comprises a first substrate having a first side and a second side opposing each other. A plurality of image sensing elements is formed in the first substrate at the first side. A conductive via is formed through the first substrate, having a first surface exposed by the first substrate at the first side and a second surface exposed by the first substrate at the second side. A conductive pad overlies the conductive via at the first side and is electrically connecting the image sensing elements. A conductive layer overlies the conductive via at the second side and electrically connects with the conductive pad. A conductive bump is formed over a portion of the conductive layer. A second substrate is bonded with the first substrate at the first side.07-16-2009
20090162967Method for forming light-transmitting regions - A method for forming a light-transmitting region comprises providing a support feature. A sacrificial layer is formed over a portion of the support feature, wherein the sacrificial layer comprises an energy-induced swelling material. A light-blocking layer is conformably formed over the support feature to cover the sacrificial layer and the support feature. The support feature, the sacrificial layer, and the light-blocking layer are subjected to an energy source to swell the sacrificial layer until bursting to thereby delaminate a portion of the light-blocking layer from the support feature and leave a light-transmitting region exposed with a portion of the support feature in the light-blocking layer. A gas flow or scrub cleaning force is provided to clean up the light-transmitting region and a top surface of the light-blocking layer remains over the support feature.06-25-2009
20100151616DYE-SENSITIZED SOLAR CELL - A dye-sensitized solar cell is provided that includes a transparent electrode formed by depositing, in order on a transparent substrate, a transparent conductive film containing tin oxide as a main component, and a compact titanium oxide layer and/or a porous titanium oxide layer, wherein the transparent conductive film, which contains tin oxide as the main component, has a fluorine concentration not exceeding 0.2 wt %, and the transparent conductive film on the transparent substrate has in an X-ray diffraction pattern thereof diffraction peaks attributable to (110), (200), and (211) planes satisfying the conditions that, relative to the sum of the diffraction intensities of the three planes, the ratios of both the (110) and (211) diffraction intensities are larger than 0.25 and smaller than 0.4, and the ratio of the (200) diffraction intensity is larger than 0.25 and smaller than 0.5. The dye-sensitized solar cell has high light conversion efficiency and has an FTO film that are highly heat resistant and does not easily deteriorate during a thermal treatment step when forming a titanium oxide porous film.06-17-2010
20090004769METHOD FOR MANUFACTURING IMAGE SENSOR - A method for manufacturing an image sensor is disclosed. The manufacturing method includes forming a unit pixel including a photodiode and a gate on a semiconductor substrate, forming an interlayer insulating layer on the semiconductor substrate including the unit pixel, planarizing the interlayer insulating layer, forming a protection layer with SiH01-01-2009
20130217169BIFACIAL SOLAR CELLS WITH BACK SURFACE DOPING - A simplified manufacturing process and the resultant bifacial solar cell (BSC) are provided, the simplified manufacturing process reducing manufacturing costs. The BSC includes an active region located on the front surface of the substrate, formed for example by a phosphorous diffusion step. The back surface includes a doped region, the doped region having the same conductivity as the substrate but with a higher doping level. Contact grids are formed, for example by screen printing. Front junction isolation is accomplished using a laser scribe.08-22-2013
20130217170LUMINESCENT MATERIALS THAT EMIT LIGHT IN THE VISIBLE RANGE OR THE NEAR INFRARED RANGE AND METHODS OF FORMING THEREO - Luminescent materials and methods of forming such materials are described herein. In one embodiment, a luminescent material has the formula: [A08-22-2013
20090081822OPTICAL ENHANCEMENT OF INTEGRATED CIRCUIT PHOTODETECTORS - A semiconductor integrated circuit structure and method for fabricating. The semiconductor integrated circuit structure includes a light sensitive device integral with a semiconductor substrate, a cover dielectric layer disposed over the light sensitive device, and a lens-formation dielectric layer disposed over the cover dielectric layer. Light is transmittable though the cover dielectric layer, and through the lens-formation dielectric layer. The lens-formation dielectric layer forms an embedded convex microlens. The microlens directs light onto the light sensitive device.03-26-2009
20090075418SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THEREOF AS WELL AS DRIVING METHOD OF SOLID-STATE IMAGING DEVICE - A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.03-19-2009
20090017574THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, DISPLAY APPARATUS HAVING THE SAME AND METHOD OF MANUFACTURING THE DISPLAY APPARATUS - A thin film transistor includes a gate electrode on a substrate, a gate insulating layer on the substrate, a channel pattern, a source electrode and a drain electrode. The channel pattern includes a semiconductor pattern formed on the gate electrode and overlaying the gate electrode as well as first and second conductive adhesive patterns formed on the semiconductor pattern and spaced apart from each other. The source electrode includes a first barrier pattern, a source pattern and a first capping pattern sequentially formed on the first conductive adhesive pattern. The drain electrode includes a second barrier pattern, a drain pattern and a second capping pattern sequentially formed on the second conductive adhesive pattern. Etched portions of the first and second conductive adhesive patterns have a substantially vertical profile to prevent the exposure of the source and drain electrodes, thereby improving the characteristics of the thin film transistor.01-15-2009
20090117682Method for Manufacturing Image Sensor - A method for manufacturing an image sensor is provided. The method can include forming an oxide layer on a color filter layer, forming a first oxide layer microlens by etching the oxide layer, forming a second oxide layer microlens on the first oxide layer microlens, and forming a third oxide layer microlens on the second oxide layer microlens.05-07-2009
20130122633METHOD FOR FABRICATING SOLAR CELL COMPRISING CONDENSER LENS AND PHOTOELECTRIC CONVERSION ELEMENT - The purpose of the present invention is to provide a method for disposing a photoelectric conversion element accurately on the focal point of a condenser lens.05-16-2013
20100221864SOLID-STATE IMAGE SENSOR AND IMAGING SYSTEM - At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring layer cross section to reduce dark currents and 1/f noise.09-02-2010
20090011534Solid-state imaging device and method of manufacturing solid-state imaging device - A solid state imaging device having a back-illuminated type structure in which a lens is formed on the back side of a silicon layer with a light-receiving sensor portion being formed thereon. Insulating layers are buried into the silicon layer around an image pickup region, with the insulating layer being buried around a contact layer that connects an electrode layer of a pad portion and an interconnection layer of the surface side. A method of manufacturing such a solid-state imaging device is also provided.01-08-2009
20100304520METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Disclosed herein is a method for making a semiconductor device including the steps of: forming a light-receiving portion for carrying out photoelectric conversion in a semiconductor substrate; forming an insulating film to cover a light-receiving side of the semiconductor substrate; forming a metallic light-shielding film to partly cover the insulating film in correspondence to the light-receiving portion; and heating the metallic light-shielding film by irradiation of the metallic light-shielding film with a microwave to permit selective annealing of a laminated portion with the metallic light-shielding film in the insulating film.12-02-2010
20090142875METHOD OF MAKING AN IMPROVED SELECTIVE EMITTER FOR SILICON SOLAR CELLS - A method for forming a selective emitter on a silicon solar cell is provided including forming an oxide layer on a surface of the P-type silicon substrate, implanting phosphorus doping atoms into the oxide layer on the substrate using plasma immersion ion implantation, patterning the oxide layer, annealing the substrate to provide heavily doped regions in the patterned regions and a lightly doped region between the patterned regions, and providing metal contacts to the heavily doped regions.06-04-2009
20110097838PHOTOELECTRIC CONVERSION APPARATUS, PRODUCING METHOD THEREFOR, IMAGE PICKUP MODULE AND IMAGE PICKUP SYSTEM - A photoelectric conversion apparatus has a plurality of photoelectric conversion elements arranged on a semiconductor substrate, a plurality of wiring layers arranged on the semiconductor substrate through the first and second insulation layers, and a high refractive index region which is arranged in an opening part that is arranged in the interlayer insulation layer so as to correspond to the photoelectric conversion element and has a higher refractive index than the interlayer insulation layers, wherein an area of a cross section parallel to a photoreceiving plane of the photoelectric conversion element in the high refractive index region increases as the position approaches to an upper part of the substrate from a photoreceiving plane of the photoelectric conversion element, namely, as the position approaches to a light-incident plane, and the increasing rate continuously increases with the increase of the area.04-28-2011
20110250716SOLID-STATE IMAGE PICKUP DEVICE AND METHOD FOR MANUFACTURING SAME - In a solid-state image pick up device, a first conduction type semiconductor layer which has a first surface side. A second surface side which is located the opposite side of the first surface side and an image sensor area. A photo-conversion area which is configured in the first surface side and charges electron by photoelectric conversion. A first diffusion area of second conduction type for isolation, wherein the first diffusion area surrounds the photo-conversion area and extends from the first surface side to the middle part of the semiconductor layer and a second diffusion area of second conduction type for isolation, wherein the second diffusion area extends from the second surface side to the bottom of the first diffusion layer.10-13-2011
20120202310SOLID-STATE IMAGE PICKUP DEVICE AND METHOD FOR MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE - A method for manufacturing a solid-state image pickup device that includes a substrate including a photoelectric conversion unit and a waveguide arranged on the substrate, the waveguide corresponding to the photoelectric conversion unit and including a core and a cladding, includes a first step and a second step, in which in the first step and the second step, a member to be formed into the core is formed in an opening in the cladding by high-density plasma-enhanced chemical vapor deposition, and in which after the first step, in the second step, the member to be formed into the core is formed by the high-density plasma-enhanced chemical vapor deposition under conditions in which the ratio of a radio-frequency power on the back face side of the substrate to a radio-frequency power on the front face side of the substrate is higher than that in the first step.08-09-2012
20110151612Method For Manufacturing An Oled Or A blank For Forming An Oled As Well As Such A Blank Or Oled - Method for manufacturing an organic light emitting device or a blank for forming therefrom an organic light emitting device as well as such a OLED or blank, the organic light emitting device having a light emitting area with two opposite first sides and two opposite second sides, the method comprising at least the following steps: providing a substrate; depositing and partly removing a layer of transparent conductive material on the substrate for forming parallel anode lines which extend between the first sides; depositing and partly removing at least one conductive layer for forming contacts which are connected anode lines; wherein a photoresist layer is deposited so that it fully extends over contacts adjacent the at least one second side except for at least one contact position per cathode line, via which an electric contact between a respective cathode line to be formed and a respective contact is established.06-23-2011
20110212566OPTICALLY CONTROLLED ELECTRICAL-SWITCH DEVICE BASED UPON CARBON NANOTUBES AND ELECTRICAL-SWITCH SYSTEM USING THE SWITCH DEVICE - Described herein is an optically controlled electrical-switch device which includes a first current-conduction terminal and a second current-conduction terminal, and a carbon nanotube connected between the first and the second current-conduction terminals, the carbon nanotube being designed to be impinged upon by electromagnetic radiation and having an electrical conductivity that can be varied by varying the polarization of the electromagnetic radiation incident thereon. In particular, the carbon nanotube may for example, in given conditions of electrical biasing, present a high electrical conductivity when it is impinged upon by electromagnetic radiation having a given wavelength and a polarization substantially parallel to the axis of the carbon nanotube itself, and a reduced electrical conductivity when it is impinged upon by electromagnetic radiation having a given wavelength and a polarization substantially orthogonal to the axis of the carbon nanotube itself.09-01-2011
20080254564METHOD FOR MANUFACTURING SOLID-STATE IMAGE SENSOR AND SOLID-STATE IMAGE SENSOR - There is provide a divided exposure technology capable of restraining deterioration in the performance of a solid-state image sensor. A photoresist is formed over a semiconductor substrate and subjected to divided exposure. A dividing line for divided exposure is located at least over a region of a semiconductor substrate in which an active region in which a pixel is to be formed is defined. The photoresist is then developed and patterned. By utilizing the patterned photoresist, an element isolation structure for defining the active region in the semiconductor substrate is formed in the semiconductor substrate.10-16-2008
20120202309METHOD OF PRODUCING SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING SOLID-STATE IMAGE PICKUP DEVICE - The method includes a step of forming a mask having an opening, for forming an opening in multiple insulating films, above a semiconductor substrate on which a member becoming a first insulating film, a member becoming a second insulating film being different from the member becoming the first insulating film, a member becoming a third insulating film, and a member becoming a fourth insulating film being different from the member becoming the third insulating film are stacked in this order; a first step of continuously removing the member becoming the fourth insulating film and the member becoming the third insulating film at a portion corresponding to the opening of the mask; and a second step of removing the member becoming the second insulating film, after the first step, at a portion corresponding to the opening of the mask.08-09-2012
20110053309METHOD FOR FABRICATING IMAGE SENSOR - A method for fabricating an image sensor is described. A substrate is provided. Multiple photoresist patterns are formed over the substrate, and then a thermal reflow step is performed to convert the photoresist patterns into multiple microlenses arranged in an array. The focal length of the microlens increases from the center of the array toward the edge of the array.03-03-2011
20110256658METHOD FOR PRODUCING PHOTOVOLTAIC CELL - In a method for producing a photovoltaic cell, the improvement comprising: 10-20-2011
20100330727Method for Fabricating Butt-Coupled Electro-Absorptive Modulators - A method for fabricating butt-coupled electro-absorptive modulators is disclosed. A butt-coupled electro-absorptive modulator with minimal dislocations in the electro-absorptive material is produced by adding a dielectric spacer for lining the coupling region before epitaxially growing the SiGe or other electro-absorptive material. It has been determined that during the SiGe growth, the current process has exposed single crystal silicon at the bottom of the hole and exposed amorphous silicon on the sides. SiGe growth on the amorphous silicon is expected to have more dislocations than single crystal silicon. There should also be dislocations or fissures where the SiGe growth from the each nucleation source finally join. Thus, a dielectric sidewall can protect an exposed waveguide face from any etching from an aggressive surface preparation prior to epi growth.12-30-2010
20090176328SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device is provided and includes a substrate, a photoelectric converting portion, a plurality of optical waveguide portions stacked above the photoelectric conversion portion, each of the plurality of optical waveguide portions including a translucent material and being shaped in a taper.07-09-2009
20090176327PHOTODIODE AND METHOD FOR FABRICATING SAME - A Schottky photodiode includes a semiconductor layer and a conductive film provided in contact with the semiconductor layer. The conductive film has an aperture and a periodic structure provided around said aperture for producing a resonant state by an excited surface plasmon in a film surface of the conductive film by means of the incident light to the film surface. The photodiode detects near-field light that is generated by at the interface between the conductive film and semiconductor layer the excited surface plasmon. The aperture has a diameter smaller than the wavelength of the incident light.07-09-2009
20120309126METHOD OF MANUFACTURING PHOTOELECTRODE STRUCTURE - A method of forming a photoelectrode structure includes: disposing a light-scattering layer including a nanowire on a photoanode substrate; and coating the light-scattering layer with an inorganic binder solution to fix the light-scattering layer on the photoanode substrate. Due to the structure of the photoelectrode structure, the adhesive force between the light-scattering layer and the photoanode substrate is enhanced and the photocurrent density is increased.12-06-2012
20100173445PRODUCTION METHOD FOR A SENSOR UNIT OF AN X-RAY DETECTOR - A production method for a sensor unit of an X-ray detector is disclosed, which can be implemented easily and precisely, is specified, the sensor unit including a scintillator with photodiodes integrated in its septa for lateral readout. In at least one embodiment of the method, individual scintillator strips are initially produced from a plurality of scintillator pixels adjoining one another along one dimension. Respectively one photodiode strip, made of a plurality of photodiodes in turn adjoining one another along one dimension, is attached to each of the individual scintillator strips along a longitudinal side in order to form a sensor strip. Here, respectively one photodiode is associated with each scintillator pixel for readout purposes. Finally, a plurality of such sensor strips are interconnected to form the two-dimensional sensor unit such that a longitudinal side of the one sensor strip facing away from the photodiode strip respectively rests against a rear side of the photodiode strip of the adjacent sensor strip.07-08-2010
20100029033Method for Manufacturing Vertical Germanium Detectors - An improved method for manufacturing a vertical germanium detector is disclosed. Initially, a detector window is opened through an oxide layer on a single crystalline substrate. Next, a single crystal germanium layer is grown within the detector window, and an amorphous germanium layer is grown on the oxide layer. The amorphous germanium layer is then polished and removed until only a portion of the amorphous germanium layer is located around the single crystal germanium layer. A tetraethyl orthosilicate (TEOS) layer is deposited on the amorphous germanium layer and the single crystal germanium layer. An implant is subsequently performed on the single crystal germanium layer. After an oxide window has been opened on the TEOS layer, a titanium layer is deposited on the single crystal germanium layer to form a vertical germanium detector.02-04-2010
20110070679Semiconductor Processing Methods - Some embodiments include methods of forming semiconductor constructions in which a semiconductor material sidewall is along an opening, a protective organic material is over at least one semiconductor material surface, and the semiconductor material sidewall and protective organic material are both exposed to an etch utilizing at least one fluorine-containing composition. The etch is selective for the semiconductor material relative to the organic material, and reduces sharpness of at least one projection along the semiconductor material sidewall. In some embodiments, the opening is a through wafer opening, and subsequent processing forms one or more materials within such through wafer opening to form a through wafer interconnect. In some embodiments, the opening extends to a sensor array, and the protective organic material is comprised by a microlens system over the sensor array. Subsequent processing may form a macrolens structure across the opening.03-24-2011
20120301995METHOD FOR LCOAL HIGH-DOPING AND CONTACTING OF A SEMICONDUCTOR STRUCTURE WHICH COMPRISES A SOLAR CELL OR A PRECURSOR OF A SOLAR CELL - The invention relates to a method for local high-doping and contacting of a semiconductor structure which is a solar cell or a precursor of a solar cell and has a silicon semiconductor substrate (11-29-2012
20120301994VERTICAL WAVEGUIDES WITH VARIOUS FUNCTIONALITY ON INTEGRATED CIRCUITS - An embodiment relates to a device comprising an optical pipe comprising a core and a cladding, the optical pipe being configured to separate wavelengths of an electromagnetic radiation beam incident on the optical pipe at a selective wavelength through the core and the cladding, wherein the core is configured to be both a channel to transmit the wavelengths up to the selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the core. Other embodiments relate to a compound light detector.11-29-2012
20120301993SOLAR CELL - A method for generating electric power including the steps of: (a) preparing a solar cell having a condensing lens and a solar cell element, wherein the solar cell element includes an n-type GaAs layer, a p-type GaAs layer, a quantum tunneling layer, an n-type InGaP layer, a p-type InGaP layer, a p-type window layer, an n-side electrode, and a p-side electrode, and satisfies the following equation (I): d11-29-2012
20120009719IMAGE SENSORS INCLUDING HYDROPHOBIC INTERFACES AND METHODS OF FABRICATING THE SAME - A method of fabricating an image sensor device includes forming an insulating layer on a substrate including a photodiode therein, and forming a wiring structure on the insulating layer. The wiring structure includes at least one wiring layer and at least one insulating interlayer. A cavity is formed extending into the wiring structure over the photodiode to expose a surface of the at least one insulating interlayer. The surface of the at least one insulating interlayer exposed by the cavity is modified to define a hydrophobic surface. Related systems and devices are also discussed.01-12-2012
20110027935Method for making a full-spectrum solar cell with an anti-reflection layer doped with silicon quantum dots - In a method for making a full-spectrum solar cell, there is provided an ordinary solar cell with an anti-reflection layer. The anti-reflection layer is coated with a film of silicon nitride and/or silicon oxide. The silicon/nitrogen ratio and/or the silicon/oxygen ratio and the temperature are regulated, thus forming a silicon-rich film via doping the anti-reflection layer with silicon from the film of silicon nitride and/or silicon oxide. The precipitation of the silicon in the silicon-rich film is executed based on a mechanism of phase separation, thus forming silicon quantum dots of various sizes in the anti-reflection layer.02-03-2011
20120070935TANDEM THIN-FILM SILICON SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME - A tandem thin-film silicon solar cell comprises a transparent substrate, a first unit cell positioned on the transparent substrate, the first unit cell comprising a p-type window layer, an i-type absorber layer and an n-type layer, an intermediate reflection layer positioned on the first unit cell, the intermediate reflection layer including a hydrogenated n-type microcrystalline silicon oxide of which the oxygen concentration is profiled to be gradually increased and a second unit cell positioned on the intermediate reflection layer, the second unit cell comprising a p-type window layer, an i-type absorber layer and an n-type layer.03-22-2012
20120070934Method to build transparent polarizing solar cell - The present disclosure provides a means to build a solar cell that is transparent to and polarizes visible light, and to transfer the energy thus generated to electrical power wires.03-22-2012
20120122265METHOD FOR PRODUCING PHOTOVOLTAIC CELL - The method for producing a photovoltaic cell includes applying an n-type diffusion layer forming composition including an n-type impurity-containing glass powder and a dispersion medium onto a first region on one surface side of a semiconductor substrate; applying a p-type diffusion layer forming composition including a p-type impurity-containing glass powder and a dispersion medium onto a second region other than the first region on the surface of the semiconductor substrate where the first region is provided; a thermal diffusion process in which an n-type diffusion layer and a p-type diffusion layer are formed by heat-treating the semiconductor substrate onto which the n-type diffusion layer forming composition and the p-type diffusion layer forming composition are applied; and forming an electrode on each of the first region where the n-type diffusion layer is formed and the second region where the p-type diffusion layer is formed, respectively.05-17-2012
20120122263METHOD FOR PRODUCING PHOTOVOLTAIC CELL - The method for producing a photovoltaic cell includes applying, on a partial region of one surface side of a semiconductor substrate, a first n-type diffusion layer forming composition including an n-type impurity-containing glass powder and a dispersion medium; applying, on at least a region other than the partial region on the surface of the semiconductor substrate, a second n-type diffusion layer forming composition which includes an n-type impurity-containing glass powder and a dispersion medium and in which a concentration of the n-type impurity is lower than that of the first n-type diffusion layer forming composition, where the first n-type diffusion layer forming composition is applied; heat-treating the semiconductor substrate on which the first n-type diffusion layer forming composition and the second n-type diffusion layer forming composition are applied to form an n-type diffusion layer; and forming an electrode on the partial region.05-17-2012
20120122264METHOD FOR PRODUCING PHOTOVOLTAIC CELL - The method for producing a photovoltaic cell includes applying, on a partial region of one surface side of a semiconductor substrate, a first p-type diffusion layer forming composition including a p-type impurity-containing glass powder and a dispersion medium; applying, on at least a region other than the partial region on the surface of the semiconductor substrate, a second p-type diffusion layer forming composition which includes a p-type impurity-containing glass powder and a dispersion medium and in which a concentration of the p-type impurity is lower than that of the first p-type diffusion layer forming composition, where the first p-type diffusion layer forming composition is applied; heat-treating the semiconductor substrate on which the first p-type diffusion layer forming composition and the second p-type diffusion layer forming composition are applied to form a p-type diffusion layer; and forming an electrode on the partial region.05-17-2012
20120315720Method for Forming Imagers - A micro-lens array with reduced or no empty space between individual micro-lenses and a method for forming same. The micro-lens array is formed by patterning a first set of micro-lens material in a checkerboard pattern on a substrate. The first set of micro-lens material is reflowed and cured into first micro-lenses impervious to subsequent reflows. Then, a second set of micro-lens material is patterned in spaces among the first micro-lenses, reflowed and cured into second micro-lenses. The reflows and cures can be conducted under different conditions, and the micro-lenses may be differently sized. The conditions of the reflows can be chosen to ensure that the focal lengths of micro-lenses are optimized for maximum sensor signal.12-13-2012
20100210061METHOD FOR FABRICATING SOLAR CELL USING INDUCTIVELY COUPLED PLASMA CHEMICAL VAPOR DEPOSITION - A method for fabricating a solar cell using inductively coupled plasma chemical vapor deposition (ICP-CVD) including a first electrode, a P layer, an intrinsic layer, an N-type layer and a second electrode. The method includes forming an intrinsic layer including a hydrogenated amorphous silicon (Si) thin film by an inductively coupled plasma chemical vapor deposition (ICP-CVD) device using mixed gas including hydrogen (H08-19-2010
20130171759METHOD FOR MODIFYING LIGHT ABSORPTION LAYER - The disclosure discloses a method for modifying the light absorption layer, including: (a) providing a substrate; (b) forming a light absorption layer on the substrate, wherein the light absorption layer includes a Group IB element, Group IIIA element and Group VIA element; (c) forming a slurry on the light absorption layer, wherein the slurry includes a Group VIA element; and (d) conducting a thermal process for the light absorption layer with the slurry.07-04-2013
20120077300PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION DEVICE - A manufacturing method forms a photoelectric conversion device having a photoreceiving portion provided in a substrate and an interlayer film arranged over the substrate. The method includes forming a layer of a lower etching rate rather than the interlayer film so that the layer of the lower etching rate covers a whole surface of the photoreceiving portion, forming the interlayer film over the layer of the lower etching rate, etching a portion of the interlayer film corresponding to the photoreceiving portion to form a hole penetrating through the interlayer film and reaching the layer of the lower etching rate, and disposing in the hole a material of a higher refractive index rather than the interlayer film.03-29-2012
20120252153Semiconductor Processing Methods - Some embodiments include methods of forming semiconductor constructions in which a semiconductor material sidewall is along an opening, a protective organic material is over at least one semiconductor material surface, and the semiconductor material sidewall and protective organic material are both exposed to an etch utilizing at least one fluorine-containing composition. The etch is selective for the semiconductor material relative to the organic material, and reduces sharpness of at least one projection along the semiconductor material sidewall. In some embodiments, the opening is a through wafer opening, and subsequent processing forms one or more materials within such through wafer opening to form a through wafer interconnect. In some embodiments, the opening extends to a sensor array, and the protective organic material is comprised by a microlens system over the sensor array. Subsequent processing may form a macrolens structure across the opening.10-04-2012
20120252154BACKSIDE ILLUMINATED IMAGE SENSOR - A backside illuminated image sensor includes a light receiving element disposed in a first substrate, an interlayer insulation layer disposed on the first substrate having the light receiving element, an align key spaced apart from the light receiving element and passing through the interlayer insulation layer and the first substrate, a plurality of interconnection layers disposed on the interlayer insulation layer in a multi-layered structure, wherein the backside of the lowermost interconnection layer is connected to the align key, a passivation layer covering the interconnection layers, a pad locally disposed on the backside of the first substrate and connected to the backside of the align key, a light anti-scattering layer disposed on the backside of the substrate having the pad, and a color filter and a microlens disposed on the light anti-scattering layer to face the light receiving element.10-04-2012
20100009493Methods of manufacturing an image sensor - The method of manufacturing an image sensor includes providing a semiconductor substrate including a first pixel region, first forming a first pattern on the first pixel region, first performing a reflow of the first pattern to form a sub-micro lens on the first pixel region, second forming a second pattern on the sub-micro lens, and second performing a reflow of the second pattern to form a first micro lens covering the sub-micro lens.01-14-2010
20090061555RADIATION DETECTING APPARATUS AND METHOD FOR MANUFACTURING THE SAME - An underlayer of a phosphor layer is disposed on a sensor panel including two-dimensionally arranged photoelectric conversion devices. The surface of the underlayer is subjected to atmospheric pressure plasma treatment. The phosphor layer is formed on the surface-treated underlayer. Then, the phosphor layer is covered with a moisture-resistant protective layer, a reflection layer, and another protective layer. Thus, the phosphor layer is prevented from peeling due to adhesion failure, and is constituted of uniformly shaped crystals by vapor deposition. A resulting radiation detecting apparatus exhibits high sensitivity and high definition, producing a uniform photoelectric conversion efficiency.03-05-2009
20120258563SOLID-STATE IMAGE PICKUP DEVICE, METHOD OF MANUFACTURING THE SAME AND ELECTRONIC APPARATUS - Disclosed herein is a solid-state image pickup device including: a trench formed in an insulating film above a light-receiving portion; a first waveguide core portion provided on an inner wall side of the trench; a second waveguide core portion filled in the trench via the first waveguide core portion; and a rectangular lens formed of the same material as that of the second waveguide core portion and provided integrally with the second waveguide core portion.10-11-2012
20120258562METHOD OF PRODUCTION OF CIS-BASED THIN FILM SOLAR CELL - A method of production of a CIS-based thin film solar cell comprises the steps of forming an alkali control layer on a high strain point glass substrate, forming a back surface electrode layer on the alkali control layer, forming a CIS-based light absorption layer on the back surface electrode layer, and forming an n-type transparent conductive film on the CIS-based light absorption layer, wherein the alkali control layer is formed to a thickness which allows heat diffusion of the alkali metal which is contained in the high strain point glass substrate to the CIS-based light absorption layer and, furthermore, the CIS-based light absorption layer has an alkali metal added to it from the outside in addition to heat diffusion from the high strain point glass substrate.10-11-2012
20100221863DYE-SENSITIZED SOLAR CELL BASED ON ELECTROSPUN ULTRA-FINE TITANIUM DIOXIDE FIBERS AND FABRICATION METHOD THEREOF - A dye-sensitized solar cell comprising a semiconductor electrode comprising electrospun ultra-fine titanium dioxide fibers and fabrication method thereof are disclosed. The dye-sensitized solar cell comprises a semiconductor electrode comprising an electrospun ultra-fine fibrous titanium dioxide layer, a counter electrode and electrolyte interposed therebetween. A non-liquid electrolyte such as polymer gel electrolyte or the like having low fluidity, as well as the liquid electrolyte, can be easily infiltrated thereinto. In addition, electrons can be effectively transferred since titanium dioxide crystals are one-dimensionally arranged.09-02-2010
20120276678NANOWIRE MULTIJUNCTION SOLAR CELL - A solar cell includes a substrate layer and a plurality of nanowires grown outwardly from the substrate layer, at least two of the nanowires including a plurality of sub-cells. The solar cell also includes one or more light guiding layers formed of a transparent, light scattering material and filling the area between the plurality of nanowires.11-01-2012
20100216275PHOTONIC INTEGRATION SCHEME - Provided is an apparatus and method for manufacture thereof. The apparatus includes a passive optical waveguide structure and a photodiode detector structure. The structures are located on a substrate, and the photodiode detector is laterally proximate to the semiconductor passive waveguide structure. The passive optical waveguide structure includes a first lateral portion of a semiconductor optical core layer on the substrate, a semiconductor upper optical cladding layer on the optical core layer, and a first lateral portion of a doped semiconductor layer on the upper optical cladding layer. The photodiode detector structure includes a second lateral portion of the semiconductor optical core layer, a semiconductor optical absorber layer on the optical core layer, and a second lateral portion of the doped semiconductor layer.08-26-2010
20130011955METHOD FOR MANUFACTURING ENERGY RAY DETECTION DEVICE - In a method for manufacturing an energy ray detection device including a first semiconductor region disposed below a first area on a surface of a semiconductor substrate, a second semiconductor region disposed below a second area on the surface and connected to a contact portion, and a third semiconductor region disposed below a third area on the surface between the first area and the second area, the first semiconductor region and the third semiconductor region are formed on the semiconductor substrate by performing ion implantation through a buffer film that covers the first area and the third area, a portion of the buffer film that covers the third area having a thickness smaller than a portion of the buffer film that covers the first area.01-10-2013
20130171760SOLID STATE IMAGE PICKUP DEVICE AND METHOD OF PRODUCING SOLID STATE IMAGE PICKUP DEVICE - Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back-side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back-side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.07-04-2013
20080213939Solid-state imaging device and method for producing the same - In a solid-state imaging device, a light-shielding film 09-04-2008
20080213938METHOD FOR FABRICATING A CMOS IMAGE SENSOR - A method for fabricating a CMOS image sensor is disclosed. First, a substrate having a sensor array region and a peripheral region is provided. A contact pad is formed on the substrate of the peripheral region, and a dielectric layer is disposed on the substrate for exposing the surface of the contact pad. A cap layer is disposed on the dielectric layer and the contact pad, in which the cap layer is patterned to form an optical shielding layer on the dielectric layer of the peripheral region and a passivation layer on the contact pad. Subsequently, a plurality of color filters, a planarizing layer, and a plurality of microlenses are disposed on the dielectric layer.09-04-2008
20130130427METHOD FOR INCREASING THE TRANSLUCENCY OF A SUBSTRATE - A method for increasing a translucency of a substrate is provided, whereby a scattering layer is deposited on the light exit side by means of chemical vapor deposition at atmospheric pressure using a flamer of a plasma, the scattering layer contains either zinc oxide or aluminum and/or aluminum oxide, more particularly aluminum-doped zinc oxide or silicon oxide.05-23-2013
20130130426METHOD OF MANUFACTURING AN OPTICAL MEMBER HAVING STACKED HIGH AND LOW REFRACTIVE INDEX LAYERS - A method of making an optical member including high refractive index layers and low refractive index layers, which are each relatively thin as compared with an optical length, and disposed alternately in the lateral direction with respect to an optical axis. Each width of the high refractive index layers and the low refractive index layers is equal to or smaller than the wavelength order of incident light.05-23-2013
20110223706METHOD OF FORMING A PHOTODETECTOR - A photodetector is formed to have a germanium detector on a waveguide. The germanium detector has a first surface on the waveguide and a second surface that, when exposed to ambient conditions, forms germanium oxide. In a processing platform, an oxygen-free plasma is applied to the second surface. The oxygen-free plasma removes oxygen that is bonded to germanium at the second surface. A cap layer is formed on the second surface prior to removing the germanium detector from the processing platform.09-15-2011
20130149806METHODS OF FORMING PHOTO DETECTORS - Methods of forming photo detectors are provided. The method includes providing a semiconductor layer on a substrate, forming a trench in the semiconductor layer, forming a first single crystalline layer and a second single crystalline layer using a selective single crystalline growth process in the trench, and patterning the first and second single crystalline layers and the semiconductor layer to form a first single crystalline pattern, a second single crystalline pattern and an optical waveguide.06-13-2013

Patent applications in class Including integrally formed optical element (e.g., reflective layer, luminescent layer, etc.)

Patent applications in all subclasses Including integrally formed optical element (e.g., reflective layer, luminescent layer, etc.)