Class / Patent application number | Description | Number of patent applications / Date published |
438053000 | Having diaphragm element | 49 |
20080227235 | Sensor Component And Method For Producing A Sensor Component - A device for detecting a measured quantity has a sensor chip for detecting the measured quantity, a supply for providing a power supply, and an injection-molded enclosure for accommodating the sensor chip and the supply, the injection-molded enclosure including integrated conductive traces providing an electrical connection between the sensor chip and the supply. | 09-18-2008 |
20080248605 | METHOD OF FORMING A PRESSURE SWITCH THIN FILM DEVICE - This invention provides a method of forming at least one pressure switch thin film device. The method includes providing a substrate and depositing a plurality of thin film device layers as a stack upon the substrate. An imprinted 3D template structure is provided upon the plurality of thin film device layers. The plurality of thin film device layers and the 3D template structure are then etched and at least one thin film device layer is undercut to provide a plurality of aligned electrical contact pairs and adjacent spacer posts. A flexible membrane providing a plurality of separate electrical contacts is deposited upon the spacer posts, the separate electrical contacts overlapping the contact pairs. The spacer posts provide a gap between the electrical contacts and the contact pairs. | 10-09-2008 |
20080261345 | METHOD FOR MANUFACTURING A SEMICONDUCTOR PRESSURE SENSOR - Method for manufacturing a semiconductor pressure sensor, wherein, in a silicon substrate, trenches are dug and delimit walls; a closing layer is epitaxially grown, that closes the trenches at the top and forms a suspended membrane; a heat treatment is performed so as to cause migration of the silicon of the walls and to form a closed cavity underneath the suspended membrane; and structures are formed for transducing the deflection of the suspended membrane into electrical signals. | 10-23-2008 |
20090004767 | SUSPENDED MEMBRANE PRESSURE SENSING ARRAY - An accurate and low cost macro pressure sensor is described. The pressure sensor includes an array of capacitive sensing elements formed at the intersections of sets of conductors. A lower set of conductors is supported by a substrate and an upper set of conductors is supported on a flexible polymer membrane. Capacitive sensing elements are formed where a conductor in the upper set overlaps a spacer in the lower set. Separators hold the membrane away from the substrate with a separation that, because of deflection of the membrane, varies in relation to the pressure applied to the membrane. As a result, the separation of conductors, and therefore capacitance, in each cell varies in response to the applied pressure. By attaching the membrane to the separators and optionally using slits in the membrane between capacitive sensing elements, measurements made in each capacitive sensing element can be mechanically decoupled. | 01-01-2009 |
20090017572 | NANOELECTROMECHANICAL TRANSISTORS AND METHODS OF FORMING SAME - Nanoelectromechanical transistors (NEMTs) and methods of forming the same are disclosed. In one embodiment, an NEMT may include a substrate including a gate, a source region and a drain region; an electromechanically deflectable nanotube member; and a channel member electrically insulatively coupled to the nanotube member so as to be aligned with the source region and the drain region, wherein the electromechanical deflection of the nanotube member is controllable, in response to an electrical potential applied to the gate and the nanotube member, between an off state and an on state, the on state placing the channel member in electrical connection with the source region and the drain region to form a current path. | 01-15-2009 |
20090029501 | Process of Forming a Microphone Using Support Member - A method of forming a microphone forms a backplate, and a flexible diaphragm on at least a portion of a wet etch removable sacrificial layer. The method adds a wet etch resistant material, where a portion of the wet etch resistant material is positioned between the diaphragm and the backplate to support the diaphragm. Some of the wet etch resistant material is not positioned between the diaphragm and backplate. The method then removes the sacrificial material before removing any of the wet etch resistant material added during the prior noted act of adding. The wet etch resistant material then is removed substantially in its entirety after removing at least part of the sacrificial material. | 01-29-2009 |
20090142873 | Method for Manufacturing a Sensor Array Including a Monolithically Integrated Circuit - A method for producing a sensor array including a monolithically integrated circuit is described as well as a sensor array. This sensor array has a micromechanical sensor structure, in which a first partial structure which is associated with the sensor structure is produced at the same time as a second partial structure which is associated with the circuit, a process variation of the first partial structure being performed in order to adjust a structure property of the sensor structure while the second partial structure remains the same. | 06-04-2009 |
20090181489 | MICROPHONE MANUFACTURING METHOD - A sacrifice layer | 07-16-2009 |
20090298216 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A method of fabricating a semiconductor device is provided. First, a first electrode is formed over a first region of a substrate. Then, a dielectric layer covering the first electrode is formed over the substrate. After that, a plurality of openings is formed on the first region of the substrate. Thereafter, a conductive layer covering the dielectric layer and the openings is formed over the substrate. Then, the conductive layer in the bottom of the openings is removed to form second electrodes. After that, the dielectric layer between the second electrode and the first electrode is removed. | 12-03-2009 |
20100173437 | Method of fabricating CMUTs that generate low-frequency and high-intensity ultrasound - The present invention provides a method of fabricating low-frequency and high-intensity ultrasound CMUTs that includes using deep reactive ion (DRIE) etching to etch at least one cavity in a first surface of a conductive silicon wafer, growing an insulating layer on at least the first surface of the conductive silicon wafer, bonding a silicon layer of a SOI wafer to the insulating layer, where the SOI wafer includes a handle layer, a buried oxide layer and a conductive silicon layer. The handle layer and the buried oxide layer of the SOI wafer are removed, where the conductive layer of the SOI wafer forms a membrane across at least one cavity, and electrically isolating at least one the membrane across the at least one cavity, where at least one the low-frequency and high-intensity ultrasound CMUT is provided. | 07-08-2010 |
20100285628 | Micromachined microphone and multisensor and method for producing same - A micromachined microphone is formed from a silicon or silicon-on-insulator (SOI) wafer. A fixed sensing electrode for the microphone is formed from a top silicon layer of the wafer. Various polysilicon microphone structures are formed above a front side of the top silicon layer by depositing at least one oxide layer, forming the structures, and then removing a portion of the oxide underlying the structures from a back side of the top silicon layer through trenches formed through the top silicon layer. The trenches allow sound waves to reach the diaphragm from the back side of the top silicon layer. In an SOI wafer, a cavity is formed through a bottom silicon layer and an intermediate oxide layer to expose the trenches for both removing the oxide and allowing the sound waves to reach the diaphragm. An inertial sensor may be formed on the same wafer, with various inertial sensor structures formed at substantially the same time and using substantially the same processes as corresponding microphone structures. | 11-11-2010 |
20100317139 | THREE-DIMENSIONAL FORCE INPUT CONTROL DEVICE AND FABRICATION - The present invention provides three-dimensional force input control devices for use in sensing vector forces and converting them into electronic signals for processing, and methods of fabricating three-dimensional force input control devices for sensing vector forces and converting them into electronic signals for processing. In some embodiments, methods of fabricating provide a semiconductor substrate having a side one and a side two; fabricate stress-sensitive IC components and signal processing IC on side one of the substrate; fabricate closed trenches on side two of the substrate, the trenches forming boundaries defining elastic elements, frame areas, and rigid islands, and remove additional substrate material from side two of the substrate in the frame area leaving the dimension of the rigid island protruding outward from side two. | 12-16-2010 |
20100323467 | FORCE INPUT CONTROL DEVICE AND METHOD OF FABRICATION - Methods of fabricating 3-dimensional force input control devices are disclosed. These roughly comprise: providing a first substrate, fabricating stress-sensitive IC components and signal processing IC on a side one of the first substrate, fabricating one or more closed trenches on a side two of the first substrate within each die area, creating elastic element, frame area and rigid island, providing a second substrate, patterning a side two of the second substrate to define areas for deep etching, creating a layer of bonding material in local areas on at least one of the surfaces of the side one of the second substrate and the side two of the first substrate, aligning and bonding the side two of the first substrate with the side one of the second substrate, etching the second substrate from the side two through to the first substrate, dicing the two bonded substrates into multiple separate dice. | 12-23-2010 |
20100330722 | CMOS MICROELECTROMECHANICAL SYSTEM (MEMS) DEVICE AND FABRICATION METHOD THEREOF - A method for fabricating the MEMS device includes providing a substrate. Then, a structural dielectric layer is formed over the substrate at a first side, wherein a diaphragm is embedded in the structural dielectric layer. The substrate is patterned from a second side to form a cavity in corresponding to the diaphragm and a plurality of venting holes in the substrate. An isotropic etching process is performed from the first side and the second side of the substrate via vent holes to remove a dielectric portion of the structural dielectric layer for exposing a central portion of the diaphragm while an end portion is held by a residue portion of the structural dielectric layer. | 12-30-2010 |
20110165719 | METHODS OF FORMING AN EMBEDDED CAVITY FOR SENSORS - A method of forming a sensor with an embedded cavity can include forming at least one cavity ( | 07-07-2011 |
20110165720 | Microphone with Irregular Diaphragm - A microphone is formed to have a diaphragm that is configured to improve signal to noise ratio. To that end, the microphone has a backplate having a hole therethrough, and a diaphragm movably coupled with the backplate. The diaphragm has a bottom surface (facing the backplate) with a convex portion aligned with the hole in the backplate. | 07-07-2011 |
20110183456 | METHOD FOR FABRICATING MEMS DEVICE - A method for fabricating MEMS device includes: providing a single crystal substrate, having first surface and second surface and having a MEMS region and an IC region; forming SCS mass blocks on the first surface in the MEMS region; forming a structural dielectric layer over the first surface of the substrate, wherein a dielectric member of the structural dielectric layer is filled in spaces surrounding the SCS mass blocks in the MEMS region, the IC region has a circuit structure with an interconnection structure formed in the structural dielectric layer; patterning the single crystal substrate by an etching process on the second surface to expose a portion of the dielectric member filled in the spaces surrounding the SCS mass blocks; performing isotropic etching process at least on the dielectric portion filled in the spaces surrounding the SCS mass blocks. The SCS mass blocks are exposed to release a MEMS structure. | 07-28-2011 |
20110189804 | METHOD OF FABRICATING A MEMS MICROPHONE - A method of fabricating a MEMS microphone includes: first providing a substrate having a first surface and a second surface. The substrate is divided into a logic region and a MEMS region. The first surface of the substrate is etched to form a plurality of first trenches in the MEMS region. An STI material is then formed in the plurality of first trenches. Subsequently, the second surface of the substrate is etched to form a second trench in the MEMS region, wherein the second trench connects with each of the first trenches. Finally, the STI material in the first trenches is removed. | 08-04-2011 |
20110256652 | METHOD FOR FORMING A TRANSDUCER - A method for forming a transducer including the step of providing a semiconductor-on-insulator wafer including first and second semiconductor layers separated by an electrically insulating layer, wherein the first layer is formed or provided by hydrogen ion delamination of a starting wafer. The method further includes doping the first layer to form a piezoresistive film and etching the piezoresistive film to form at least one piezoresistor. The method also includes depositing or growing a metallization layer on the semiconductor-on-insulator wafer, the metallization layer including an electrical connection portion that is located on or is electrically coupled to the piezoresistor. The method includes removing at least part of the second semiconductor layer to form a diaphragm, with the at least part of the piezoresistor being located on the diaphragm, and joining the wafer to a package by melting a high temperature braze material or a glass frit material. | 10-20-2011 |
20110300659 | METHOD FOR FABRICATING MEMS DEVICE - Method for fabricating MEMS device has a first surface and a second surface and having a MEMS region and an IC region. A MEMS structure is formed over the first surface. A structural dielectric layer is formed over the first surface. The structural dielectric layer has a dielectric member and the spaces surrounding the MEMS structure is filled with the dielectric member. The substrate is patterned by etching process from the second surface of the substrate to expose a portion of the dielectric member filled in the space surrounding the MEMS structure. A wettable thin layer is formed to cover an exposed portion of the substrate at the second surface. An etching process is performed on the dielectric member filled in the spaces surrounding the MEMS structure. The MEMS structure is exposed and released by the etching process. The etching process comprises an isotropic etching process with a wet etchant. | 12-08-2011 |
20120058587 | METHOD FOR MANUFACTURING CAPACITIVE ELECTROMECHANICAL TRANSDUCER - A capacitive electromechanical transducer includes a substrate, a cavity formed by a vibrating membrane held above the substrate with a certain distance between the vibrating membrane and the substrate by supporting portions arranged on the substrate, a first electrode whose surface is exposed to the cavity, and a second electrode whose surface facing the cavity is covered with an insulating film, wherein the first electrode is provided on a surface of the substrate or a lower surface of the vibrating membrane and the second electrode is provided on a surface of the vibrating membrane or a surface of the substrate so as to face the first electrode. In this transducer, fine particles composed of an oxide film of a substance constituting the first electrode are arranged on the surface of the first electrode, and the diameter of the fine particles is 2 to 200 nm. | 03-08-2012 |
20120107994 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - In a manufacturing method of a semiconductor device, a substrate including single crystalline silicon is prepared, a reformed layer that continuously extends is formed in the substrate, and the reformed layer is removed by etching. The forming the reformed layer includes polycrystallizing a portion of the single crystalline silicon by irradiating the substrate with a pulsed laser beam while moving a focal point of the laser beam in the substrate. | 05-03-2012 |
20120264250 | METHOD OF FORMING MEMBRANES WITH MODIFIED STRESS CHARACTERISTICS - A method of modifying stress characteristics of a membrane in one embodiment includes providing a membrane layer, determining a desired stress modification, and forming at least one trough in the membrane layer based upon the determined desired stress modification. | 10-18-2012 |
20120270355 | INERTIAL SENSOR AND METHOD OF MANUFACTURING THE SAME - Disclosed herein is an inertial sensor, which includes a diaphragm having a piezoelectric element or a piezoresistive element formed on one surface thereof, a mass element integrated with the center of the other surface of the diaphragm in which the distal end of the mass element has a larger width than the width of the proximal end in contact with the diaphragm, and a supporter formed along the edge of the other surface of the diaphragm, so that the use of the mass element having the above shape results in decreased spring constant and increased distance from the center of the diaphragm to the center of the mass element, thereby simultaneously realizing a reduction in the size of the inertial sensor and an increase in performance thereof. A method of manufacturing the inertial sensor is also provided. | 10-25-2012 |
20130065343 | METHOD FOR ETCHING MATERIAL LONGITUDINALLY SPACED FROM ETCH MASK - A micromachining process forms a plurality of layers on a wafer. This plurality of layers includes both a support layer and a given layer. The process also forms a mask, with a mask hole, at least in part on the support layer. In this configuration, the support layer is positioned between the mask hole and the given layer, and longitudinally spaces the mask hole from the given layer. The process also etches a feature into the given layer through the mask hole. | 03-14-2013 |
20130065344 | Process of Forming a Microphone Using Support Member - A method of forming a microphone forms a backplate, and a flexible diaphragm on at least a portion of a wet etch removable sacrificial layer. The method adds a wet etch resistant material, where a portion of the wet etch resistant material is positioned between the diaphragm and the backplate to support the diaphragm. Some of the wet etch resistant material is not positioned between the diaphragm and backplate. The method then removes the sacrificial material before removing any of the wet etch resistant material added during the prior noted act of adding. The wet etch resistant material then is removed substantially in its entirety after removing at least part of the sacrificial material. | 03-14-2013 |
20130137207 | MEDIA-COMPATIBLE ELECTRICALLY ISOLATED PRESSURE SENSOR FOR HIGH TEMPERATURE APPLICATIONS - A method for manufacturing a Micro-Electro-Mechanical System pressure sensor, including forming a gauge wafer including a diaphragm and a pedestal region. The method includes forming an electrical insulation layer disposed on a second surface of the diaphragm region and forming a plurality of sensing elements patterned on the electrical insulation layer disposed on the second surface in the diaphragm region, forming a cap wafer with a central recess in an inner surface and a plurality of through-wafer embedded vias made of an electrically conductive material in the cap wafer, creating a sealed cavity by coupling the inner recessed surface of the cap wafer to the gauge wafer, such that electrical connections from the sensing elements come out to an outer surface of the cap wafer through the vias, and attaching a spacer wafer with a central aperture to the pedestal region with the central aperture aligned to the diaphragm region. | 05-30-2013 |
20130244365 | CONDENSER MICROPHONE HAVING FLEXURE HINGE DIAPHRAGM AND METHOD OF MANUFACTURING THE SAME - A condenser microphone having a flexure hinge diaphragm and a method of manufacturing the same are provided. The method includes the steps of: forming a lower silicon layer and a first insulating layer; forming an upper silicon layer on the first insulating layer; forming sound holes by patterning the upper silicon layer; forming a second insulating layer and a conductive layer on the upper silicon layer; forming a passivation layer on the conductive layer; forming a sacrificial layer on the passivation layer; depositing a diaphragm on the sacrificial layer, and forming air holes passing through the diaphragm; forming electrode pads on the passivation layer and a region of the diaphragm; and etching the layers to form an air gap between the diaphragm and the upper silicon layer. Consequently, a manufacturing process may improve the sensitivity and reduce the size of the condenser microphone. | 09-19-2013 |
20130260504 | METHOD FOR FABRICATING MICRO-ELECTRO-MECHANICAL SYSTEMS (MEMS) DEVICE - Method is to fabricate a MEMS device with a substrate. The substrate has through holes in the substrate within a diaphragm region and optionally an indent space from the second surface at the diaphragm region. A first dielectric structural layer is then disposed over the substrate from the first surface, wherein the first dielectric structural layer has a plurality of openings corresponding to the through holes, wherein each of the through holes remains exposed by the first dielectric structural layer. A second dielectric structural layer with a chamber is disposed over the first dielectric structural layer, wherein the chamber exposes the openings of the first dielectric structural layer and the through holes of the substrate to connect to the indent space. A MEMS diaphragm is embedded in the second dielectric structural layer above the chamber, wherein an air gap is formed between the substrate and the MEMS diaphragm. | 10-03-2013 |
20130302934 | METHOD OF MANUFACTURING CAPACITIVE ELECTROMECHANICAL TRANSDUCER - Provided is a method of manufacturing a capacitive electromechanical transducer using fusion bonding, which is capable of reducing fluctuations in initial deformation among diaphragms caused at positions having different boundary conditions such as the bonding area, thereby enhancing the uniformity of the transducer and stabilizing the sensitivity and the like. The method of manufacturing a capacitive electromechanical transducer includes: forming an insulating layer on a first silicon substrate and forming at least one recess; fusion bonding a second silicon substrate onto the insulating layer; and thinning the second silicon substrate and forming a silicon film. The method further includes, before the bonding of the second silicon substrate onto the insulating layer, forming a groove in the insulating layer at the periphery of the at least one recess. | 11-14-2013 |
20140024162 | ANCHOR DESIGN AND METHOD FOR MEMS TRANSDUCER APPARATUSES - An improved MEMS transducer apparatus and method. The method includes providing a movable base structure having a base surface region overlying a substrate and a center cavity with a cavity surface region. At least one center anchor structure and one spring structure can be spatially disposed within a substantially circular portion of the surface region. The spring structure(s) can be coupled the center anchor structure(s) to a portion of the cavity surface region. The substantially circular portion can be configured within a vicinity of the center of the surface region. At least one capacitor element, having a fixed and a movable capacitor element, can be spatially disposed within a vicinity of the cavity surface region. The fixed capacitor element(s) can be coupled to the center anchor structure(s) and the movable capacitor element(s) can be spatially disposed on a portion of the cavity surface region. | 01-23-2014 |
20140038335 | INTEGRATED ACOUSTIC TRANSDUCER IN MEMS TECHNOLOGY, AND MANUFACTURING PROCESS THEREOF - A MEMS acoustic transducer, for example, a microphone, includes a substrate provided with a cavity, a supporting structure, fixed to the substrate, a membrane having a perimetral edge and a centroid, suspended above the cavity and fixed to the substrate the membrane configured to oscillate via the supporting structure. The supporting structure includes a plurality of anchorage elements fixed to the membrane, and each anchorage element is coupled to a respective portion of the membrane between the centroid and the perimetral edge of the membrane. | 02-06-2014 |
20140120646 | ELECTROMECHANICAL TRANSDUCER AND METHOD OF MANUFACTURING THE SAME - An electromechanical transducer includes multiple elements each including at least one cellular structure, the cellular structure including: a semiconductor substrate, a semiconductor diaphragm, and a supporting portion for supporting the diaphragm so that a gap is formed between one surface of the substrate and the diaphragm. The elements are separated from one another at separating locations of a semiconductor film including the diaphragm. Each of the elements includes in a through hole passing through a first insulating layer including the supporting portion and the semiconductor substrate: a conductor which is connected to the semiconductor film including the diaphragm; and a second insulating layer for insulating the conductor from the semiconductor substrate. | 05-01-2014 |
20140213008 | Capacitive Sensors and Methods for Forming the Same - A device includes a semiconductor substrate, and a capacitive sensor having a back-plate, wherein the back-plate forms a first capacitor plate of the capacitive sensor. The back-plate is a portion of the semiconductor substrate. A conductive membrane is spaced apart from the semiconductor substrate by an air-gap. A capacitance of the capacitive sensor is configured to change in response to a movement of the polysilicon membrane. | 07-31-2014 |
20140220723 | Methods and Structures for Using Diamond in the Production of MEMS - A MEMS device with movable MEMS structure and electrodes is produced by fabricating electrodes and shielding the electrodes with diamond buttons during subsequent fabrication steps, such as the etching of sacrificial oxide using vapor HF. In some embodiments, the diamond buttons are removed after the movable MEMS structure is released. | 08-07-2014 |
20140242740 | MICROMACHINED ULTRA-MINIATURE PIEZORESISTIVE PRESSURE SENSOR AND METHOD OF FABRICATION OF THE SAME - A method of fabrication of one or more ultra-miniature piezoresistive pressure sensors on silicon wafers is provided. The diaphragm of the piezoresistive pressure sensors is formed by fusion bonding. The piezoresistive pressure sensors can be formed by silicon deposition, photolithography and etching processes. | 08-28-2014 |
20150024537 | ULTRASONIC TRANSDUCER, BIOLOGICAL SENSOR, AND METHOD FOR MANUFACTURING AN ULTRASONIC TRANSDUCER - A method for manufacturing an ultrasonic transducer includes: forming a piezoelectric element by laminating a lower electrode, a piezoelectric body, and an upper electrode on a first face of a support film; affixing a reinforcing substrate that covers the piezoelectric element to the first face of the support film; forming a photosensitive resin substrate to a second face of the support film that is on an opposite side from the first face; forming an opening in the resin substrate by irradiating the resin substrate with light; and removing the reinforcing substrate. | 01-22-2015 |
20150031160 | CMOS COMPATIBLE MEMS MICROPHONE AND METHOD FOR MANUFACTURING THE SAME - The present invention relates to a CMOS compatible MEMS microphone, comprising: an SOI substrate, wherein a CMOS circuitry is accommodated on its silicon device layer; a microphone diaphragm formed with a part of the silicon device layer, wherein the microphone diaphragm is doped to become conductive; a microphone backplate including CMOS passivation layers with a metal layer sandwiched and a plurality of through holes, provided above the silicon device layer, wherein the plurality of through holes are formed in the portions thereof opposite to the microphone diaphragm, and the metal layer forms an electrode plate of the backplate; a plurality of dimples protruding from the lower surface of the microphone backplate opposite to the diaphragm; and an air gap, provided between the diaphragm and the microphone backplate, wherein a spacer forming a boundary of the air gap is provided outside of the diaphragm or on the edge of the diaphragm; wherein a back hole is formed to be open in substrate underneath the diaphragm so as to allow sound pass through, and the microphone diaphragm is used as an electrode plate to form a variable capacitive sensing element with the electrode plate of the microphone backplate. | 01-29-2015 |
20150031161 | INERTIAL SENSOR AND METHOD OF MANUFACTURING THE SAME - Disclosed herein an inertial sensor and a method of manufacturing the same. An inertial sensor | 01-29-2015 |
20150125984 | Low Frequency Response Microphone Diaphragm Structures And Methods For Producing The Same - A microphone system includes a diaphragm suspended by springs and including a sealing layer that seals passageways which, if left open, would degrade the microphone's frequency response by allowing air to pass from one side of the diaphragm to the other when the diaphragm is responding to an incident acoustic signal. In some embodiments, the sealing layer may include an equalization aperture to allow pressure to equalize on both sides of the diaphragm. | 05-07-2015 |
20150132880 | MICROELECTROMECHANICAL SYSTEM (MEMS) DEVICE AND FABRICATION METHOD THEREOF - A method for fabricating MEMS device includes providing a silicon substrate. A structural dielectric layer is formed over a first side of the silicon substrate. Structure elements are embedded in the structural dielectric layer. The structure elements include a conductive backplate disposed over the silicon substrate, having venting holes and protrusion structures on top of the conductive backplate; and diaphragm located above the conductive backplate by a distance. A chamber is formed between the diaphragm and the conductive backplate. A cavity is formed in the silicon substrate at a second side. The cavity corresponds to the structure elements. An isotropic etching is performed on a dielectric material of the structural dielectric layer to release the structure elements. A first side of the diaphragm is exposed by the chamber and faces to the protrusion structures of the conductive backplate. A second side of the diaphragm is exposed to an environment space. | 05-14-2015 |
20150147841 | METHOD TO RELEASE DIAPHRAGM IN MEMS DEVICE - A method for releasing a diaphragm of a micro-electro-mechanical systems (MEMS) device at a stage of semi-finished product. The method includes pre-wetting the MEMS device in a pre-wetting solution to at least pre-wet a sidewall surface of a cavity of the MEMS device. Then, a wetting process after the step of pre-wetting the MEMS device is performed to etch a dielectric material of a dielectric layer for holding the diaphragm, wherein a sensing portion of the diaphragm is released from the dielectric layer. | 05-28-2015 |
20150344297 | Capacitive Sensors and Methods for Forming the Same - A device includes a semiconductor substrate, and a capacitive sensor having a back-plate, wherein the back-plate forms a first capacitor plate of the capacitive sensor. The back-plate is a portion of the semiconductor substrate. A conductive membrane is spaced apart from the semiconductor substrate by an air-gap. A capacitance of the capacitive sensor is configured to change in response to a movement of the polysilicon membrane. | 12-03-2015 |
20160090303 | MONOLITHIC CMOS-MEMS MICROPHONES AND METHOD OF MANUFACTURING - Systems and methods are disclosed for manufacturing a CMOS-MEMS device ( | 03-31-2016 |
20160122182 | MEMS DEVICE WITH A CAPPING SUBSTRATE - A method for forming an integrated circuit device includes forming a dielectric layer onto a first substrate, forming a sacrificial material into a sacrificial cavity formed into the dielectric layer, forming a membrane layer over the dielectric layer and sacrificial material, releasing the sacrificial material through at least one via formed through the membrane layer, and bonding a capping substrate to the membrane layer such that a second cavity is formed, the second cavity being connected to the sacrificial cavity though a via formed into the membrane layer. | 05-05-2016 |
20160157038 | Structure and Method for Integrated Microphone | 06-02-2016 |
20160167955 | ELECTROMECHANICAL TRANSDUCER AND METHOD FOR MANUFACTURING THE SAME WHICH SUPPRESSES LOWERING OF SENSITIVITY WHILE A PROTECTIVE LAYER IS FORMED | 06-16-2016 |
20160167957 | METHOD OF MANUFACTURING AN INTEGRATED CIRCUIT COMPRISING A PRESSURE SENSOR | 06-16-2016 |
20160379973 | ULTRASONIC TRANSDUCERS IN COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) WAFERS AND RELATED APPARATUS AND METHODS - Micromachined ultrasonic transducers formed in complementary metal oxide semiconductor (CMOS) wafers are described, as are methods of fabricating such devices. A metallization layer of a CMOS wafer may be removed by sacrificial release to create a cavity of an ultrasonic transducer. Remaining layers may form a membrane of the ultrasonic transducer. | 12-29-2016 |