Entries |
Document | Title | Date |
20080220554 | OPTICAL SUBSTRATE, LIGHT EMITTING ELEMENT, DISPLAY DEVICE AND MANUFACTURING METHODS THEREOF - The present invention relates to an optical substrate comprising a transparent substrate a low refractive index layer, whose refractive index is lower than that of the transparent substrate, disposed over the transparent substrate, and a solgel film disposed over the low refractive index layer; a light emitting element having a first electrode, a light emitting layer and a second electrode over the solgel film of this optical substrate; and a display device provided with this light emitting element. | 09-11-2008 |
20080248603 | Nitride-based semiconductor element and method of preparing nitride-based semiconductor - A method of preparing a nitride semiconductor capable of forming a nitride-based semiconductor layer having a small number of dislocations as well as a small number of crystal defects resulting from desorption with excellent crystallinity on the upper surface of a substrate through a small number of growth steps is proposed. The method of preparing a nitride-based semiconductor comprises steps of forming a mask layer on the upper surface of a substrate to partially expose the upper surface of the substrate, forming a buffer layer on the exposed part of the upper surface of the substrate and the upper surface of the mask layer and thereafter growing a nitride-based semiconductor layer. Thus, the outermost growth surface of the nitride-based semiconductor layer laterally grown on the mask layer does not come into contact with the mask layer. Therefore, desorption hardly takes place from the outermost growth surface of the nitride-based semiconductor layer, whereby a nitride-based semiconductor layer having a small number of defects is formed. Further, the mask layer is directly formed on the substrate, whereby the number of growth steps for the nitride-based semiconductor layer is reduced. | 10-09-2008 |
20080254562 | Method of making a light emitting element - A method of making a light emitting element, the light emitting element with a semiconductor layer represented by: Al | 10-16-2008 |
20080268561 | Manufacturing Method of Light-Emitting Device - An object is to provide a manufacturing method of a light-emitting device including an organic compound layer, in which a desired organic compound layer is easily formed using a plurality of evaporation materials. A first organic compound layer containing a plurality of evaporation materials is formed over a first substrate. The first organic compound layer is formed using a mixture formed by mixture of the plurality of evaporation materials in advance. A second substrate is placed at a position facing the first substrate so as to face the first organic compound layer provided for the first substrate. The first organic compound layer as an evaporation source is heated to be vaporized and a desired second organic compound layer is formed over the second substrate placed so as to face the first substrate. Accordingly, a light-emitting device is manufactured. | 10-30-2008 |
20080268562 | COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREOF - A pn-junction compound semiconductor light-emitting device is provided, which comprises a stacked structure including a light-emitting layer composed of an n-type or a p-type aluminum gallium indium phosphide and a light-permeable substrate for supporting the stacked structure, and the stacked structure and the light-permeable substrate being joined together, wherein the stacked structure includes an n-type or a p-type conductor layer, the conductor layer and the substrate are joined together, and the conductor layer is composed of a Group III-V compound semiconductor containing boron. | 10-30-2008 |
20080299694 | METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT - In a semiconductor laser manufacturing method, a GaN single-crystal substrate is formed by slicing a GaN bulk crystal, grown on a c-plane, parallel to an a-plane which is perpendicular to the c-plane. In this substrate, crystal defects extending parallel to the c-axis direction do not readily exert an influence, and degradation of element characteristics due to crystal defects can be suppressed. Further, because the a-plane is a nonpolar plane, improved light emission efficiency and longer wavelengths can be achieved compared with the c-plane, which is a polar plane. Hence a semiconductor laser manufacturing method of this invention enables further improvement of the element characteristics of the semiconductor laser to be fabricated. | 12-04-2008 |
20080311695 | Method of producing nitride semiconductor light-emitting device - In a method of producing a nitride semiconductor light-emitting device including a nitride semiconductor active layer ( | 12-18-2008 |
20090029499 | Method for Manufacturing Nitride Semiconductor Light Emitting Element - Provided is a method for manufacturing a nitride semiconductor light emitting element. In the method, when an isolation trench for chip isolation and for laser lift-off is formed, a degradation-free nitride semiconductor light emitting element with high luminance can be formed without doing any damages to a light emitting region. In an n type nitride semiconductor layer | 01-29-2009 |
20090042328 | SEMICONDUCTOR LIGHT EMITTING DEVICE - At least one recess and/or protruding portion is created on the surface portion of a substrate for scattering or diffracting light generated in a light emitting region. The recess and/or protruding portion has a shape that prevents crystal defects from occurring in semiconductor layers. | 02-12-2009 |
20090042329 | Laser Process for Reliable and Low-Resistance Electrical Contacts - Disclosed is a method for manufacturing an organic optoelectronic device. The method comprises providing a substrate, disposing a first electrode on the substrate, disposing a metal pad on the substrate, electrically separated from the first electrode, disposing a first material over the first electrode and at least partially over the metal pad, applying a beam, wherein the beam ablates the first material in an ablation window so that the ablation window includes at least a portion of an edge of the metal pad, and disposing a second electrode over the first material and over the ablation window so that the second electrode is in electrical contact with the at least a portion of an edge of the metal pad. | 02-12-2009 |
20090087936 | DEPOSITION METHOD OF III GROUP NITRIDE COMPOUND SEMICONDUCTOR LAMINATED STRUCTURE - The present invention provides a deposition method of a multilayered structure composed of a III group nitride compound semiconductor having good crystallinity on a substrate. The multilayered structure comprises at least a buffer layer and an underlying layer from the substrate side, and the buffer layer and the underlying layer are formed by a sputtering method. A deposition temperature of the buffer layer is adjusted to a temperature lower than a deposition temperature of the underlying layer, or the thickness of the buffer layer is adjusted to 5 nm to 500 nm. Furthermore, the multilayered structure comprises at least an underlying layer and a light-emissive layer from the substrate side and the underlying layer is formed by a sputtering method, and the method comprises the step of forming the light-emissive layer by a metal-organic chemical vapor deposition (MOCVD method). | 04-02-2009 |
20090087937 | METHOD FOR MANUFACTURING NITRIDE BASED SINGLE CRYSTAL SUBSTRATE AND METHOD FOR MANUFACTURING NITRIDE BASED LIGHT EMITTING DIODE USING THE SAME - A method for manufacturing a nitride based single crystal substrate and a method for manufacturing a nitride based light emitting diode using the same. The method for manufacturing the nitride based single crystal substrate includes forming a ZnO layer on a base substrate; forming a low-temperature nitride buffer layer on the ZnO layer using dimethyl hydragine (DMHy) as an N source; growing a nitride single crystal on the low-temperature nitride buffer layer; and separating the nitride single crystal from the base substrate by chemically eliminating the ZnO layer. | 04-02-2009 |
20090093076 | METHOD FOR MANUFACTURING MONOLITHIC SEMICONDUCTOR LASER - First and second semiconductor lasers interelement-separated from each other are formed. Total thickness of a fourth upper cladding layer and a second contact layer of the second semiconductor laser is smaller than total thickness of a second upper cladding layer and the first contact layer of the first semiconductor laser. First and second ridges are formed in the first and second semiconductor lasers by dry etching, using a resist as a mask, and the dry etching is stopped when a second etching stopper layer is exposed at the second ridge. The second upper cladding layer remaining on a first etching stopper layer at the first ridge is selectively removed by wet etching, using the resist as a mask. | 04-09-2009 |
20090093077 | METHOD OF MANUFACTURING GaN SUBSTRATE, METHOD OF MANUFACTURING EPITAXIALWAFER, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND EPITAXIALWAFER - Assuming that r (m) represents the radius of a GaN substrate, t | 04-09-2009 |
20090098676 | METHOD OF MANUFACTURING LIGHT EMITTING DIODE - A method of manufacturing a light emitting diode includes forming an active layer of a nitride semiconductor on a first conductive type of a nitride semiconductor layer, thermally treating the active layer at a first temperature, and forming a second conductive type of a nitride semiconductor layer on the active layer at a second temperature lower than the first temperature. | 04-16-2009 |
20090104727 | HIGH POWER SEMICONDUCTOR LASER DIODES - A high power laser source comprises a bar of laser diodes, a submount onto which said laser bar is affixed, and a cooler onto which said submount is affixed. The laser bar has a first coefficient of thermal expansion (CTE | 04-23-2009 |
20090111205 | Method of seperating two material systems - An embodiment of this invention discloses a method of separating two material systems, which comprises steps of providing a bulk sapphire; forming a nitride system on the bulk sapphire; forming at least two channels between the bulk sapphire and the nitride system; etching at least one inner surface of the channel; and separating the bulk sapphire and the nitride system. | 04-30-2009 |
20090117679 | METHODS FOR FORMING CRYSTALLINE THIN-FILM PHOTOVOLTAIC STRUCTURES - Methods for forming semiconductor devices include providing a textured template, forming a buffer layer over the textured template, forming a substrate layer over the buffer layer, removing the textured template, thereby exposing a surface of the buffer layer, and forming a semiconductor layer over the exposed surface of the buffer layer. | 05-07-2009 |
20090142870 | MANUFACTURING METHOD OF GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - The present invention provides a manufacturing method of a group III nitride semiconductor light-emitting device, including a lamination step of forming a plurality of lamination films including a group III nitride semiconductor on a substrate, in which a substrate on which is formed a foundation layer including a monocrystalline group III nitride semiconductor is used as the substrate, and lamination films are formed on the foundation layer by a sputtering method, with the substrate including the foundation layer and a target made from a group III metal or an alloy including a group III metal being placed in a sputtering chamber. | 06-04-2009 |
20090148976 | Method for fabricating semiconductor epitaxial layers using metal islands - Disclosed is a method for fabricating a GaN semiconductor epitaxial layer. The method includes the steps of: (a) providing a substrate within a reaction furnace; (b) setting a temperature range of the substrate to be 200° C.˜1,300° C.; (C) supplying a Ga metallic source on the substrate; (d) changing the supplied Ga metallic source on the substrate, to Ga metal islands; (e) supplying a nitrogenous source to the Ga metal islands after suspending supply of the Ga metallic source; (f) forming GaN islands by reacting the Ga metal islands with the nitrogenous source; and (g) growing a GaN epitaxial layer by basing the GaN islands as a seed. | 06-11-2009 |
20090155947 | METHOD OF GROWING SEMI-POLAR NITRIDE SINGLE CRYSTAL THIN FILM AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE USING THE SAME - A method of growing a semi-polar nitride single crystal thin film. The method includes forming a semi-polar nitride single crystal base layer on an m-plane hexagonal system single crystal substrate, forming a dielectric pattern layer on the semi-polar nitride single crystal base layer, and growing the semi-polar nitride single crystal thin film on the semi-polar nitride single crystal base layer having the dielectric pattern layer in a lateral direction. The growing of the semi-polar nitride single crystal thin film in a lateral direction includes primarily growing the semi-polar nitride single crystal thin film in the lateral direction such that part of a growth plane on the semi-polar nitride single crystal base layer has an a-plane, and secondarily growing the semi-polar nitride single crystal thin film in the lateral direction such that sidewalls of the primarily grown semi-polar nitride single crystal thin film are combined to have a (11 | 06-18-2009 |
20090162962 | METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LASER - The invention provides a high-reliability nitride semiconductor laser that reduces the stress of a nitride dielectric film formed on a resonator's end face, thus reducing possible damage to the resonator's end face, which may occur during the formation of the nitride dielectric film. A method of manufacturing a nitride semiconductor laser according to the invention uses a nitride-based III-V compound semiconductor and includes the steps of (a) forming an adherence layer of a nitride dielectric on both a light-emitting and a light-reflecting end face of a resonator in plasma containing a nitrogen gas; and (b) forming a low-reflective and a high-reflective face-coating film of a dielectric on the adherence layers. | 06-25-2009 |
20090181485 | METHOD OF MANUFACTURING VERTICAL GALLIUM-NITRIDE BASED LIGHT EMITTING DIODE - A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED can prevent the damage of an n-type GaN layer contacting an n-type electrode, thereby stably securing the contact resistance of the n-electrode. The vertical GaN-based LED includes: a support layer; a p-electrode formed on the support layer; a p-type GaN layer formed on the p-electrode; an active layer formed on the p-type GaN layer; an n-type GaN layer for an n-type electrode contact, formed on the active layer; an etch stop layer formed on the n-type GaN layer to expose a portion of the n-type GaN layer; and an n-electrode formed on the n-type GaN layer exposed by the etch stop layer. | 07-16-2009 |
20090191659 | SINGLE-CRYSTAL NITRIDE-BASED SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING HIGH-QUALITY NITRIDE-BASED LIGHT EMITTING DEVICE BY USING THE SAME - A nitride-based light emitting device is manufactured by using a single-crystal nitride-based semiconductor substrate. A seed material layer is deposited on a first substrate where organic residues including a natural oxide layer are removed from an upper surface of the first substrate. A multifunctional substrate is grown from the seed material layer. The single-crystal nitride-based semiconductor layer including a nitride-based buffer layer is formed on the multifunctional substrate. The seed material layer primarily assists the growth of the multifunctional substrate, which is essentially required for the growth of the single-crystal nitride-based semiconductor substrate. The multifunctional substrate is prepared in the form of a single-crystal layer or a poly-crystal layer having a hexagonal crystalline structure. The light emitting device employing the single-crystal nitride-based semiconductor substrate is used as a next-generation white light source having high capacity, large area, high brightness and high performance. | 07-30-2009 |
20090203162 | OPTICAL ELEMENT, METHOD FOR MANUFACTURING OPTICAL ELEMENT AND SEMICONDUCTOR LASER DEVICE USING THE OPTICAL ELEMENT - The present invention provides an optical element which can reliably acquire a difference of refractive indices between a member under a photonic crystal layer and the crystal layer without using such a stacking technique as in conventional processes; a method for manufacturing the optical element; and a semiconductor laser device with the use of the optical element. The optical element has the first layer | 08-13-2009 |
20090221110 | VERTICAL LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME - Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface having a Ga | 09-03-2009 |
20090258452 | METHOD FOR FORMING QUANTUM WELL STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT - A method for forming a quantum well structure that can reduce the variation in the In composition in the thickness direction of a well layer and a method for manufacturing a semiconductor light emitting element are provided. In a step of forming a quantum well structure (active layer) by alternately growing barrier layers and well layers on a primary surface of a GaN substrate, the well layers are each formed by growing InGaN, the barrier layers are each grown at a first temperature, the well layers are each grown at a second temperature which is lower than that of the first temperature, and when the well layers are each formed, before a starting material gas for Ga (trimethylgallium) is supplied, a starting material gas for In is supplied. | 10-15-2009 |
20090258453 | METHOD FABRICATING NITRIDE-BASED COMPOUND LAYER, GaN SUBSTRATE AND VERTICAL STRUCTURE NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE - In a method for fabricating a nitride-based compound layer, first, a GaN substrate is prepared. A mask layer with a predetermined pattern is formed on the GaN substrate to expose a partial area of the GaN substrate. Then a buffer layer is formed on the partially exposed GaN substrate. The buffer layer is made of a material having a 10% or less lattice mismatch with GaN. Thereafter, the nitride-based compound is grown laterally from a top surface of the buffer layer toward a top surface of the mask layer and the nitride-based compound layer is vertically grown to a predetermined thickness. Also, the mask layer and the buffer layer are removed via wet-etching to separate the nitride-based compound layer from the GaN substrate. | 10-15-2009 |
20090258454 | METHOD OF MANUFACTURING GALLIUM NITRIDE BASED LIGHT EMITTING DIODE HAVING SURFACE IRREGULARITIES - An n-type GaN layer is formed on a substrate, and an active layer is formed on the n-type GaN layer. A p-type GaN layer is formed on the active layer, and portions of the p-type GaN layer and the active layer are mesa-etched so as to expose a portion of the n-type GaN layer. An irregularities forming layer is formed on the p-type GaN layer and a photosensitive film pattern for forming a surface irregularities pattern is formed on the irregularities forming layer. The irregularities forming layer is selectively wet-etched by using the photosensitive film pattern as an etching mask, thereby forming surface irregularities. A p-electrode is formed on the p-type GaN layer having the surface irregularities formed thereon, and an n-electrode is formed on the exposed n-type GaN layer.” | 10-15-2009 |
20090286343 | Double-Sided Monolithically Integrated Optoelectronic Module with Temperature Compensation - An optoelectronic module includes a semiconductor structure with a substrate having a first side and a second side, a first layered structure deposited on the first side, and a second layered structure deposited on the second side. The optoelectronic module also includes driver circuitry fabricated of the first layered structure and a diode laser fabricated of the second layered structure. The driver circuitry produces a drive electrical signal supplied to the diode laser, and the diode laser produces an optical output in response to the drive electrical signal. In a preferred embodiment, the optoelectronic module also includes a temperature-sensitive element fabricated of the first or the second layered structure. The temperature-sensitive element produces a temperature dependent control signal related to the diode laser temperature. | 11-19-2009 |
20090305448 | Method for Manufacturing a Semiconductor Light Emitting Device - To provide a method for manufacturing a semiconductor light emitting device capable of providing sufficiently low operating voltage. | 12-10-2009 |
20090325334 | GaN BASED GROUP III-V NITRIDE SEMICONDUCTOR LIGHT-EMITTING DIODE AND METHOD FOR FABRICATING THE SAME - A GaN based III-V nitride semiconductor light-emitting device and a method for fabricating the same are provided. In the GaN based III-V nitride semiconductor light-emitting device including first and second electrodes arranged facing opposite directions or the same direction with a high-resistant substrate therebetween and material layers for light emission or lasing, the second electrode directly contacts a region of the outmost material layer exposed through an etched region of the high-resistant substrate. A thermal conductive layer may be formed on the bottom of the high-resistant substrate to cover the exposed region of the outmost material layer. | 12-31-2009 |
20100009484 | METHOD OF FABRICATING QUANTUM WELL STRUCTURE - In the method of fabricating a quantum well structure which includes a well layer and a barrier layer, the well layer is grown at a first temperature on a sapphire substrate. The well layer comprises a group III nitride semiconductor which contains indium as a constituent. An intermediate layer is grown on the InGaN well layer while monotonically increasing the sapphire substrate temperature from the first temperature. The group III nitride semiconductor of the intermediate layer has a band gap energy larger than the band gap energy of the InGaN well layer, and a thickness of the intermediate layer is greater than 1 nm and less than 3 nm in thickness. The barrier layer is grown on the intermediate layer at a second temperature higher than the first temperature. The barrier layer comprising a group III nitride semiconductor and the group III nitride semiconductor of the barrier layer has a band gap energy larger than the band gap energy of the well layer. | 01-14-2010 |
20100009485 | SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING SAME, AND OPTICAL MODULE - A semiconductor light emitting device capable of realizing a long life, and a method of manufacturing the same. The impurity concentration of hydrogen in the active layer is 3×10 | 01-14-2010 |
20100015742 | METHOD FOR FABRICATING LIGHT EMITTING DIODE CHIP - A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode. | 01-21-2010 |
20100015743 | ETCHED-FACET RIDGE LASERS WITH ETCH-STOP - A photonic device incorporates an epitaxial structure having an active region, and which includes a wet etch stop layer above, but close to, the active region. An etched-facet ridge laser is fabricated on the epitaxial structure by dry etching followed by wet etching. The dry etch is designed to stop before reading the depth needed to form the ridge. The wet etch completes the formation of the ridge and stops at the wet etch stop layer. | 01-21-2010 |
20100062558 | Method for producing transparent conductive layer comprising TIO2 and method for producing semiconductor light-emitting element utilizing said method for producing transparent conductive layer - When a p-layer | 03-11-2010 |
20100068843 | DISTRIBUTED BRAGG'S REFLECTOR OF DIGITAL-ALLOY MULTINARY COMPOUND SEMICONDUCTOR - There is provided a distributed Bragg's reflector (DBR) comprising a substrate and an unit distributed Bragg's reflector (DBR) layer, wherein a multi-layer is laminated on the substrate. The unit DBR layer is composed of a multi-layer laminated structure of unit digital-alloy multinary compound semiconductor layer/multinary compound semiconductor layer or unit digital-alloy multinary compound semiconductor layer/unit digital-alloy multinary compound semiconductor layer. The unit digital-alloy multinary compound semiconductor layer is composed of the multi-layer laminated structure of the first layer of multinary compound semiconductor and the second layer of a different multinary compound semiconductor on said first layer. The digital-alloy distributed Bragg's reflector of the present invention has a uniform quality on the substance area and the filter and reflector having uniformly high quality can be mass produced by using the reflector. | 03-18-2010 |
20100081225 | MASK PATTERN FOR SELECTIVE AREA GROWTH OF SEMICONDUCTOR LAYER AND SELECTIVE AREA GROWTH METHOD USING THE MASK PATTERN FOR SEMICONDUCTOR LAYER - Provided is a mask pattern for selective area growth of a semiconductor layer and a selective area growth method for a semiconductor layer for independently controlling a growth rate and a strain of the semiconductor layer. The selective area growth method includes: forming a plurality of pairs of first mask patterns, the first mask patterns in each pair including a first open area therebetween, the first open area having a width that is wider than a distance causing overgrowth of the semiconductor layer, the pairs of the first mask patterns repeatedly arranged with a period P therebetween; wherein controlling a growth rate and a strain of the semiconductor layer formed on the first open area by adjusting the period P. | 04-01-2010 |
20100093124 | METHOD OF PRODUCING A GROUP III NITRIDE CRYSTAL - There is provided a method capable of obtaining an aluminum-based group III nitride crystal layer having a smooth surface and high crystallinity by employing only HVPE in which inexpensive raw materials can be used to reduce production costs and high-speed film formation is possible without employing MOVPE. | 04-15-2010 |
20100099213 | METHOD FOR BLOCKING DISLOCATION PROPAGATION OF SEMICONDUCTOR - The present invention provides a method for blocking the dislocation propagation of a semiconductor. A semiconductor layer is formed by epitaxial process on a substrate. A plurality of recesses is formed on the semiconductor layer by etching fragile locations of the semiconductor layer where dislocation occurs. Thereafter, a blocking layer is formed on each of the plurality of recesses. The aforesaid semiconductor layer undergoes epitaxial process again on the aforesaid semiconductor layer, and laterally overgrows to redirect the dislocation defects. | 04-22-2010 |
20100105159 | NITRIDE SEMICONDUCTOR SINGLE CRYSTAL SUBSTRATE, AND METHODS OF FABRICATING THE SAME AND A VERTICAL NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE USING THE SAME - A nitride semiconductor single crystal substrate, a manufacturing method thereof and a method for manufacturing a vertical nitride semiconductor device using the same. According to an aspect of the invention, in the nitride semiconductor single crystal substrate, upper and lower regions are divided along a thickness direction, the nitride single crystal substrate having a thickness of at least 100 μm. Here, the upper region has a doping concentration that is five times or greater than that of the lower region. Preferably, a top surface of the substrate in the upper region has Ga polarity. Also, according to a specific embodiment of the invention, the lower region is intentionally un-doped and the upper region is n-doped. Preferably, each of the upper and lower regions has a doping concentration substantially identical in a thickness direction. | 04-29-2010 |
20100120187 | PRODUCTION OF A HEXAGONAL BORON NITRIDE CRYSTAL BODY CAPABLE OF EMITTING OUT ULTRAVIOLET RADIATION - The invention has for its object to provide a process of synthesizing high-purity hBN crystal bodies on a robust substrate even under normal pressure. | 05-13-2010 |
20100136731 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND FABRICATION METHOD THEREOF - A method of fabricating a nitride semiconductor light-emitting device providing a nitride semiconductor light-emitting device with a GaN layer, bringing the nitride semiconductor light-emitting device into contact with hydrogen separation metal, vibrating the nitride semiconductor light-emitting device and the hydrogen separation metal, removing hydrogen from the GaN layer of the nitride semiconductor light-emitting device and separating the hydrogen separation metal from the nitride semiconductor light-emitting device. | 06-03-2010 |
20100151612 | Group III-V semiconductor device and method for producing the same - A method for producing a Group III-V semiconductor device, includes forming, on a base, a plurality of semiconductor devices isolated from one another, forming, through ion implantation, a high-resistance region in a surface layer of a side surface of each semiconductor device, after formation of the high-resistance region, forming a p-electrode and a low-melting-point metal diffusion prevention layer on the top surface of the semiconductor device, bonding the semiconductor device to a conductive support substrate via a low-melting-point metal layer, and removing the base through the laser lift-off process. | 06-17-2010 |
20100159626 | Nitride semiconductor light-emitting device and method for fabrication thereof - An adhesion layer of a hexagonal crystal is laid on a facet an optical resonator of a nitride semiconductor laser bar having a nitride-based III-V group compound semiconductor layer, and a facet coat is laid on the adhesion layer. In this way, a structure in which the facet coat is laid on the adhesion layer is obtained. | 06-24-2010 |
20100178721 | SEMICONDUCTOR DEVICE, METHOD FOR FABRICATING AN ELECTRODE, AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A semiconductor device includes a p-type nitride semiconductor layer ( | 07-15-2010 |
20100210058 | METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed is a method of manufacturing a semiconductor light emitting device. The method includes forming a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a substrate, forming an electrode layer on the light emitting structure, forming a conductive support member on the electrode layer, and planarizing a top surface of the conductive support member. | 08-19-2010 |
20100216269 | ORGANIC EL ELEMENT AND ITS MANUFACTURING METHOD - There is provided an organic EL element having, between a positive electrode and a negative electrode, a lamination structure formed of organic films having a light emitting layer, a hole transport layer adjacent to a positive electrode side of the light emitting layer, and an electron transport layer adjacent to a negative electrode side of the light emitting layer. At least one of the organic films composing the lamination structure includes a metal element having reactivity to oxygen or water. | 08-26-2010 |
20100233836 | METHOD FOR MANUFACTURING ZINC OXIDE BASED SEMICONDUCTOR DEVICE - A method for manufacturing a ZnO based compound semiconductor device including a contact for a p-type ZnO based compound semiconductor electrode is provided. The method includes forming a stacked body including a substrate, and an n-type ZnO based semiconductor layer and a p-type ZnO based semiconductor layer on the substrate, with the p-type ZnO based semiconductor layer exposed to outside. The stacked body is subjected to heat treatment so that a surface temperature of the p-type ZnO based semiconductor layer is in the range of 250° C. to 500° C. After the heat treatment, a p-side metal electrode is formed on the p-type ZnO based semiconductor layer at a temperature lower than 550° C. And an n-side metal electrode is formed on the n-type ZnO based semiconductor layer. | 09-16-2010 |
20100240161 | Method for fabricating nitride semiconductor light-emitting device - A method for fabricating a nitride semiconductor light-emitting device includes the steps of creating a recessed region in a nitride semiconductor substrate having a nonpolar plane or a semipolar plane, and providing a nitride semiconductor thin film including an n-type nitride semiconductor thin film, an active layer and a p-type nitride semiconductor thin film on the nitride semiconductor substrate. The p-type nitride semiconductor thin film is grown at a growth temperature higher than or equal to 700° C. and lower than 900° C. | 09-23-2010 |
20100267180 | METHOD FOR MANUFACTURING ORGANIC ELECTRONIC ELEMENT - Provided is a manufacturing method by which each functional layer of various types of organic electronic elements can be uniformly formed by wet process. Specifically, a method for manufacturing an organic electronic element which uniformly emits light with high emission efficiency is provided. The method for manufacturing the organic electronic element includes a step of forming a functional layer by laminating at least an organic layer (A) and an organic layer (B) in this order on a substrate. After forming at least the organic layer (A), the organic layer (B) is applied and formed on the organic layer (A) by using a fluorine-containing solvent. | 10-21-2010 |
20100267181 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate. | 10-21-2010 |
20100291723 | METHOD OF MANUFACTURING AN ORGANIC ELECTRONIC OR OPTOELECTRONIC DEVICE - A method of manufacturing an organic electronic or optoelectronic device, the method comprising the steps of: (a) providing a substrate having a plurality of banks formed thereon with alternating well formations formed therebetween, the surface of said banks having imprint formations formed thereon of a dimension conferring a selected wetting property to the surface of said banks that is different from the surface of said wells; and (b) depositing an organic solution into said well formations, wherein the wetting property of said banks causes any organic solution deposited thereon to be at least partially repelled. | 11-18-2010 |
20100311198 | FRAME ASSEMBLY EXTENDING DONOR FILM, METHOD OF MANUFACTURING DONOR FILM USED IN LASER INDUCED THERMAL IMAGING(LITI), AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DEVICE - A frame assembly to stretch a donor film used in laser induced thermal imaging (LITI), a method of manufacturing the donor film, and a method of manufacturing an organic light emitting device. The frame assembly to stretch a donor film includes: a main body including a center opening; a first support portion including a film mounting guide portion on which the donor film is mounted; a second support portion that including a film pressing portion that presses a donor film in a direction perpendicular to a coupling direction of the frame main body and the first support portion; and an elastic member disposed between the first support portion and the main body, wherein the first support portion is coupled to an inner portion of the main body by a first coupling member, and wherein the second support portion is coupled to an inner portion of the first support portion in a direction perpendicular to the coupling direction of the main body and the first support portion by a second coupling member. | 12-09-2010 |
20100317136 | METHOD FOR PRODUCING SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING DEVICE, METHOD FOR GROWING NITRIDE TYPE III-V GROUP COMPOUND SEMICONDUCTOR LAYER, METHOD FOR GROWING SEMICONDUCTOR LAYER, AND METHOD FOR GROWING LAYER - A method for producing a semiconductor light emitting device is disclosed. The method comprises the step of growing a nitride type III-V group compound semiconductor layer that forms a light emitting device structure on a principal plane of a nitride type III-V group compound semiconductor substrate on which a plurality of second regions made of a crystal having a second average dislocation density are regularly arranged in a first region made of a crystal having a first average dislocation density so as to produce a semiconductor light emitting device, the second average dislocation density being greater than the first average dislocation density. The nitride type III-V group compound semiconductor layer does not directly contact the second regions on the principal plane of the nitride type III-V group compound semiconductor substrate. | 12-16-2010 |
20110008923 | LIGHT EMITTING DIODES WITH SMOOTH SURFACE FOR REFLECTIVE ELECTRODE - A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are separately disposed on the epitaxial layer structure, and the epitaxial layer structure has a root-means-square (RMS) roughness less than about 3 at a surface whereon the first electrode is formed. | 01-13-2011 |
20110014740 | DUAL PANEL TYPE ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An organic electroluminescent device includes a switching element and a driving element connected to the switching element on a substrate in a pixel region, an overcoat layer on the switching element and the driving element, a first contact layer on the overcoat layer, the first contact layer being made of one of molybdenum and indium tin oxide, a cathode on the first contact layer, the cathode connected to the driving element through the first contact layer, an emitting layer on the cathode, and an anode on the emitting layer. | 01-20-2011 |
20110027928 | PULSED LASER DEPOSITION OF HIGH QUALITY PHOTOLUMINESCENT GaN FILMS - High quality GaN films exhibiting strong room temperature blue photoluminescence with negligible impurity emissions are grown by a Pulsed Laser Deposition process in which process parameters are controlled to attain plasma particle energy of a target material plume directed from the target on the substrate structure below 5 eV at the deposition surface. Among the process parameters, a distance between the deposition surface and the target, a pressure level of the reaction gas in the processing chamber, and an energy density of the pulsed laser beam directed to the target are controlled, in combination, to attain the required low plasma particle energy of the plume below 5 eV in vicinity of the deposition surface. | 02-03-2011 |
20110039364 | MANUFACTURING METHOD OF MICROSTRUCTURE - A manufacturing method of a microstructure which enables production of a deep and narrow microstructure in a GaN semiconductor with high precision is provided. The manufacturing method of a microstructure for forming a microscopic structure in a semiconductor has a configuration having a first step of forming a first GaN semiconductor layer on a substrate, a second step of forming a first hole by using etching on the first GaN semiconductor layer formed in the first narrow, and a third step of performing heat-treatment at a temperature from 850° C. to 950° C. inclusive under a gas atmosphere including nitrogen, in order to form a second narrow in which a diameter of the first hole h formed in the second step is made narrower than the diameter of the first hole in an in-plane direction of the substrate. | 02-17-2011 |
20110053302 | METHOD OF FABRICATING LIGHT EMITTING DIODE USING LASER LIFT-OFF TECHNIQUE AND LASER LIFT-OFF APPARATUS HAVING HEATER - Disclosed is a method of fabricating a light emitting diode using a laser lift-off apparatus. The method includes growing an epitaxial layer including a first conductive-type compound semiconductor layer, an active layer and a second conductive-type compound semiconductor layer on a first substrate, bonding a second substrate, having a different thermal expansion coefficient from that of the first substrate, to the epitaxial layers at a first temperature of the first substrate higher than a room temperature, and separating the first substrate from the epitaxial layer by irradiating a laser beam through the first substrate at a second temperature of the first substrate higher than the room temperature but not more than the first temperature. Thus, during a laser lift-off process, focusing of the laser beam can be easily achieved and the epitaxial layers are prevented from cracking or fracture. The laser lift-off process is performed by a laser lift-off apparatus including a heater. | 03-03-2011 |
20110053303 | Method of fabricating semiconductor substrate and method of fabricating light emitting device - The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution. | 03-03-2011 |
20110059563 | MANUFACTURE METHOD FOR ZnO-BASED LIGHT EMITTING DEVICE - A manufacture method for a ZnO-based light emitting device, includes the steps of: forming a ZnO-based semiconductor layer of a first conductivity type above a substrate; two-dimensionally growing a first ZnO-based semiconductor layer of a second conductivity type opposite to the first conductivity type above the ZnO-based semiconductor layer of the first conductivity type; and three-dimensionally growing a second ZnO-based semiconductor layer of the second conductivity type on the first ZnO-based semiconductor layer of the second conductivity type. | 03-10-2011 |
20110059564 | LED HAVING VERTICAL STRUCTURE AND METHOD FOR FABRICATING THE SAME - A light emitting diode (LED) having a vertical structure and a method for fabricating the same. The light emitting diode (LED) having a vertical structure includes a support layer; a first electrode formed on the support layer; a plurality of semiconductor layers formed on the first electrode; a conductive semiconductor layer formed on the plurality of semiconductor layers, and provided with an outer surface having a tilt angle of a designated degree; and a second electrode formed on the conductive semiconductor layer. | 03-10-2011 |
20110065222 | ELECTRONIC COMPONENT, METHOD FOR ITS PRODUCTION AND ITS USE - The present invention relates to an electronic component having at least one anode, at least one cathode, at least one charge injection layer, at least one layer of an organic semiconductor and at least one layer situated between the charge injection layer and the organic semiconductor layer, which component is characterized in that the layer situated between the charge injection layer and the organic semiconductor layer and the organic semiconductor layer are obtainable by coating the charge injection layer with a mixture composition at least one material which can be made insoluble by means of chemical reaction, and at least one organic semiconductor, method for producing said component and use of said component. | 03-17-2011 |
20110086454 | DIBENZOFURANE POLYMERS FOR ELECTROLUMINISCENT DEVICES - Disclosed are electroluminescent materials comprising a homopolymer based on recurring structural units of the formula (I) | 04-14-2011 |
20110117688 | ORGANIC EL DEVICE - According to one embodiment, a method of manufacturing an organic EL device includes providing a structure including a substrate and an electrode positioned above the substrate, and forming an organic layer including a mixture of first and second organic materials above the electrode. The first organic material has a first sublimation point. The second organic material has a second sublimation point higher than the first sublimation point. The formation of the organic layer includes heating an evaporation material including a mixture of the first and second organic materials to an evaporation temperature so as to sublimate the first and second organic materials, and delivering the sublimed first and second organic materials toward the electrode to deposit a mixture including the first and second organic materials above the electrode. The evaporation temperature is, for example, a temperature higher than the second sublimation temperature by 50° C. or more. | 05-19-2011 |
20110129953 | METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE - A method of manufacturing a nitride semiconductor device is disclosed. The method includes forming a gallium nitride (GaN) epitaxial layer on a first support substrate, forming a second support substrate on the GaN epitaxial layer, forming a passivation layer on a surface of the other region except for the first support substrate, etching the first support substrate by using the passivation layer as a mask, and removing the passivation layer and thereby exposing the second support substrate and the GaN epitaxial layer. | 06-02-2011 |
20110136280 | GROWTH METHODOLOGY FOR LIGHT EMITTING SEMICONDUCTOR DEVICES - A method of manufacturing an optoelectronic light emitting semiconductor device is provided where a Multi-quantum Well (MQW) subassembly is subjected to reduced temperature vapor deposition processing to form one or more of n-type or p-type layers over the MQW subassembly utilizing a plurality of precursors and an indium surfactant. The precursors and the indium surfactant are introduced into the vapor deposition process at respective flow rates with the aid of one or more carrier gases, at least one of which comprises H | 06-09-2011 |
20110136281 | EPITAXIAL FORMATION SUPPORT STRUCTURES AND ASSOCIATED METHODS - Epitaxial formation support structures and associated methods of manufacturing epitaxial formation support structures and solid state lighting devices are disclosed herein. In several embodiments, a method of manufacturing an epitaxial formation support substrate can include forming an uncured support substrate that has a first side, a second side opposite the first side, and coefficient of thermal expansion substantially similar to N-type gallium nitride. The method can further include positioning the first side of the uncured support substrate on a first surface of a first reference plate and positioning a second surface of a second reference plate on the second side to form a stack. The first and second surfaces can include uniformly flat portions. The method can also include firing the stack to sinter the uncured support substrate. At least side of the support substrate can form a planar surface that is substantially uniformly flat. | 06-09-2011 |
20110136282 | METHOD FOR PRODUCING DEVICE - The present invention is directed to a method for producing a device, comprising the steps of: applying, on a donor substrate, a precursor material which is solvent-soluble during application and is capable of being converted to a device-constituting material after the application; converting the precursor material to a device-constituting material; and transferring the material on the donor substrate onto a device substrate. According to the present invention, it is possible to produce an organic device that offers performance as high as that of an organic device produced by vapor deposition, and the present invention is particularly suitable for producing large-sized devices. | 06-09-2011 |
20110143473 | THIN FILM DEPOSITION APPARATUS AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY DEVICE BY USING THIN FILM DEPOSITION APPARATUS - A thin film deposition apparatus to remove static electricity generated between a substrate and a mask, and a method of manufacturing an organic light-emitting display device using the thin film deposition apparatus. | 06-16-2011 |
20110143474 | LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC APPLIANCE, AND METHOD OF MANUFACTURING THE SAME - A light-emitting element is provided which has a light-emitting layer between a first electrode and a second electrode, where the light-emitting layer has a first layer and a second layer; the first layer contains a first organic compound and a third organic compound; the second layer contains a second organic compound and the third organic compound; the first layer is provided to be in contact with the second layer on the first electrode side; the first organic compound is an organic compound with an electron transporting property; the second organic compound is an organic compound with a hole transporting property; the third organic compound has an electron trapping property; and light emission from the third organic compound can be obtained when voltage is applied to the first electrode and the second electrode so that the potential of the first electrode is higher than that of the second electrode. | 06-16-2011 |
20110151607 | METHOD FOR MANUFACTURING A METAL AND DIELECTRIC NANOSTRUCTURES ELECTRODE FOR COLORED FILTERING IN AN OLED AND METHOD FOR MANUFACTURING AN OLED - A method for manufacturing an OLED and an electrode for an OLED, said electrode comprising a surface comprising a first dielectric nanostructuration and a second metal nanostructuration, on a substrate, wherein the following successive steps are carried out:
| 06-23-2011 |
20110159625 | ORGANIC EL DISPLAY - An organic EL element includes a pair of electrodes and an emitting layer interposed therebetween. The emitting layer is made of a mixture containing a host material and a dopant material. In the emitting layer, a concentration profile of the dopant material along a thickness direction includes at least two relative maximums or at least two relative minimums. | 06-30-2011 |
20110177641 | ELECTROLUMINESCENT DEVICES FOR LIGHTING APPLICATIONS - A method of fabricating an organic light emitting device is provided. A first electrode is provided, over which the rest of the device will be fabricated. A first organic layer is deposited over the first electrode via solution processing. The first organic layer includes:
| 07-21-2011 |
20110177642 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT - Provided is a method for manufacturing a semiconductor light-emitting element having a narrow wavelength distribution and comprising a substrate and a group III compound semiconductor layer formed thereon, the substrate being made of a material different from the compound semiconductor constituting the semiconductor layer. The method for manufacturing a semiconductor light-emitting element having a group III compound semiconductor layer is characterized by comprising a semiconductor layer-forming step wherein a group III compound semiconductor layer having a total thickness of not less than 8 μm is formed on a substrate ( | 07-21-2011 |
20110207256 | IN-SITU ACCEPTOR ACTIVATION WITH NITROGEN AND/OR OXYGEN PLASMA TREATMENT - Embodiments of the present invention generally relate to methods and apparatus for the manufacturing of devices, such as light emitting diodes (LEDs), laser diodes (LDs) and, more particularly, to processes for forming Group III-V materials by metal-organic chemical vapor deposition (MOCVD) processes. In one embodiment, a method for fabricating a compound nitride structure on a substrate is provided. The method comprises depositing a p-type doped Group III-nitride film over one or more substrates in a processing chamber and exposing the p-type doped Group III-nitride film to a plasma in the processing chamber to activate the p-type dopant by breaking up hydride complexes formed between the p-type dopant and hydrogen. | 08-25-2011 |
20110212559 | LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME, INTEGRATED LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME, METHOD FOR GROWING A NITRIDE-BASED III-V GROUP COMPOUND SEMICONDUCTOR, SUBSTRATE FOR GROWING A NITRIDE-BASED III-V GROUP COMPOUND SEMICONDUCTOR, LIGHT SOURCE CELL UNIT, LIGHT-EMITTING DIODE BACKLIGHT, LIGHT-EMITTING DIODE ILLUMINATING DEVICE, LIGHT-EMITTING DIODE DISPLAY AND ELECTRONIC INSTRUMENT, ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type. | 09-01-2011 |
20110217803 | PRODUCTION METHOD FOR SEMICONDUCTOR LIGHT EMITTING DEVICES - Producing a semiconductor film containing a first semiconductor layer, an active layer, and a second semiconductor layer, each represented as Al | 09-08-2011 |
20110244617 | FORMING A COMPOUND-NITRIDE STRUCTURE THAT INCLUDES A NUCLEATION LAYER - The present invention generally provides apparatus and methods for forming LED structures. In one embodiment where a sapphire substrate is selected, the growth of bulk Group III-nitrides may be deposited in a HVPE or MOCVD chamber while a separate processing chamber, such as a PVD, MOCVD, CVD, or ALD chamber, may be used to grow buffer layers on the sapphire substrate at lower growth rate. The buffer layer may be GaN, AlN, AlGaN, InGaN, or InAlGaN. In another embodiment where a silicon-based substrate is selected, the growth of bulk Group III-nitrides may be deposited in a HVPE or MOCVD chamber in which an Al-free environment is provided while a separate processing chamber with a Ga-free environment is used to grow a Ga-free buffer layer, such as Al, AlN, or SiN, on the silicon-based substrate. The separate processing chamber may be a PVD, CVD, MOCVD, a plasma assisted MOCVD, or other vapor phase deposition techniques. | 10-06-2011 |
20110250714 | NITRIDE SEMICONDUCTOR AND METHOD FOR MANUFACTURING SAME - A nitride semiconductor includes: a substrate having a major surface including a first crystal polarity surface and a second crystal polarity surface different from the first crystal polarity surface; and a single polarity layer provided above the major surface and having a single crystal polarity. | 10-13-2011 |
20110269255 | Compositions and Methods for Manufacturing Light-emissive Devices - A composition adapted for use in the manufacture of an organic light-emissive device by passing the composition through one or more openings under pressure to deposit the composition, the composition comprising: a semi-conductive organic host material; a luminescent metal complex; and a first solvent, wherein the first solvent has a structure: | 11-03-2011 |
20110287566 | METHOD FOR FABRICATING AN ELECTROLUMINESCENCE DEVICE - A nanocrystal electroluminescence device comprising a polymer hole transport layer, a nanocrystal light-emitting layer and an organic electron transport layer wherein the nanocrystal light-emitting layer is independently and separately formed between the polymer hole transport layer and the organic electron transport layer. According to the nanocrystal electroluminescence device, since the hole transport layer, the nanocrystal light-emitting layer and the electron transport layer are completely separated from one another, the electroluminescence device provides a pure nanocrystal luminescence spectrum having limited luminescence from other organic layers and substantially no influence by operational conditions, such as voltage. Further included is a method for fabricating the nanocrystal electroluminescence device. | 11-24-2011 |
20110294245 | ADAPTATION OF THE LATTICE PARAMETER OF A LAYER OF STRAINED MATERIAL - The invention relates to a method of adapting the lattice parameter of a seed layer of a strained material, comprising the following successive steps: a) a structure is provided that has a seed layer of strained material, of lattice parameter A | 12-01-2011 |
20110300657 | PROCESS FOR FORMING AN ELECTROACTIVE LAYER - There is provided a process for forming a layer of electroactive material. The process includes: depositing a liquid composition containing an electroactive material and at least one solvent onto a workpiece to form a wet layer; placing the wet layer on the workpiece into a vacuum chamber containing solid absorptive material; and treating the wet layer at a controlled temperature in the range of −25° C. to 80° C. and under an applied vacuum in the range of 10 | 12-08-2011 |
20110318859 | ELECTRONIC DEVICE AND METHOD OF MAKING - Disclosed is an electronic device comprising a glass, glass ceramic, or ceramic sheet having a thickness less than about 0.4 mm and wherein a minimum strength of the inorganic substrate is greater than about 500 MPa. Also disclosed is a method of making an electronic device including drawing a viscous inorganic material to form an inorganic ribbon having opposing as-formed edges along a length of the ribbon, separating the ribbon to form a substrate sheet of inorganic material comprising two as-formed edges and forming a device element on the inorganic substrate. | 12-29-2011 |
20120003770 | METHOD FOR FORMING EPITAXIAL WAFER AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for forming an epitaxial wafer is provided as one enabling growth of a gallium nitride based semiconductor with good crystal quality on a gallium oxide region. In step S | 01-05-2012 |
20120009710 | METHOD OF FORMING LDD OF TFT, METHOD OF FABRICATING TFT AND ORGANIC LIGHT EMITTING DEVICE USING THE METHOD - A method of forming a lightly doped drain (LDD) of a thin film transistor (TFT) is disclosed. The method includes the following steps. A gate electrode is formed on a front side of a substrate. A gate insulating layer is formed on the gate electrode and the front side of the substrate. An activation layer is formed on the gate insulating layer. Low-concentration ion implantation is performed on the activation layer via a back side of the substrate. High-concentration ion implantation is performed on the activation layer that has been subjected to the low-concentration ion implantation, via the front side of the substrate, thereby forming a low-concentration impurity region and a high-concentration impurity region in the activation layer. The method may further include forming a high-concentration ion implantation mask on the activation layer. | 01-12-2012 |
20120015465 | Nitride semiconductor light emitting device, method of manufacturing nitride semiconductor light emitting device, and nitride semiconductor transistor device - Example embodiments herein relate to a nitride semiconductor light emitting device including a coat film formed at a light emitting portion and including an aluminum nitride crystal or an aluminum oxynitride crystal, and a method of manufacturing the nitride semiconductor light emitting device. Also provided is a nitride semiconductor transistor device including a nitride semiconductor layer and a gate insulating film which is in contact with the nitride semiconductor layer and includes an aluminum nitride crystal or an aluminum oxynitride crystal. | 01-19-2012 |
20120015466 | METHOD FOR FABRICATING LIGHT EMITTING DEVICE - Provided is a method for fabricating a light emitting device. The method includes forming a gallium oxide layer; forming a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer on the gallium oxide layer; forming a non-conductive substrate on the second conductive type semiconductor layer; separating the gallium oxide layer forming a conductive substrate on the first conductive type semiconductor layer; and separating the non-conductive substrate. | 01-19-2012 |
20120021545 | METHOD OF MANUFACTURING VERTICAL LIGHT EMITTING DIODE - A method of manufacturing a vertical light emitting diode includes: providing a first substrate; forming a lapping stop layer on the first substrate, the lapping stop layer being harder than the first substrate; depositing an epitaxial layer on the lapping stop layer; bonding a second substrate on the epitaxial layer; and removing the first substrate from the lapping stop layer. | 01-26-2012 |
20120021546 | Method of fabricating semiconductor substrate and method of fabricating light emitting device - The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution. | 01-26-2012 |
20120021547 | INK-JET INK FOR ORGANIC ELECTROLUMINESCENT DEVICES AND METHOD FOR PRODUCING ORGANIC ELECTROLUMINESCENT DEVICES - The problem is to provide such an ink-jet ink for organic EL devices that a jetted droplet trails no ligaments and wet-spreads well upon adhering. The solution is an ink-jet ink for organic electroluminescent device comprising water, a surfactant and an aqueous macromolecular material, wherein the ink has a static surface tension of 40 mN/m or less and a dynamic surface tension, measured by a maximum bubble pressure method at 100 Hz, of 55 mN/m or more. | 01-26-2012 |
20120021548 | Apparatus For Forming A Film And An Electroluminescence Device - A device having three evaporation sources and a unit for moving the respective evaporation sources in one chamber is used, whereby it becomes possible to increase efficiency of use of an evaporation material. Consequently, manufacturing cost can be reduced, and a uniform thickness can be obtained over an entire surface of a substrate even in the case in which a large area substrate is used. | 01-26-2012 |
20120021549 | METHOD FOR GROWING CRYSTALS OF NITRIDE SEMICONDUCTOR, AND PROCESS FOR MANUFACTURE OF SEMICONDUCTOR DEVICE - A nitride semiconductor layer formation method includes the steps of: (S1) placing a substrate in a reaction chamber, the substrate including a −r-plane nitride semiconductor crystal at least in an upper surface; (S2) increasing a temperature of the substrate by heating the substrate placed in the reaction chamber; and (S3) growing a nitride semiconductor layer on the substrate. In the temperature increasing step (S2), a nitrogen source gas and a Group III element source gas are supplied into the reaction chamber. | 01-26-2012 |
20120040483 | Copper Blend I-VII Compound Semiconductor Light-Emitting Devices - Implementations and techniques for semiconductor light-emitting devices including one or more copper blend I-VII compound semiconductor material barrier layers are generally disclosed. | 02-16-2012 |
20120040484 | Method for Producing a Semiconductor Element - Presented is a method for producing an optoelectronic component. The method includes separating a semiconductor layer based on a III-V-compound semiconductor material from a substrate by irradiation with a laser beam having a plateau-like spatial beam profile, where individual regions of the semiconductor layer are irradiated successively. | 02-16-2012 |
20120045862 | CO-DEPOSITION METHODS FOR THE FABRICATION OF ORGANIC OPTOELECTRONIC DEVICES - A method for fabricating an OLED by preparing phosphorescent metal complexes in situ is provided. In particular, the method simultaneously synthesizes and deposits copper (I) complexes in an organic light emitting device. Devices comprising such complexes may provide improved photoluminescent and electroluminescent properties. | 02-23-2012 |
20120058585 | METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LASER ELEMENT - A method for manufacturing a nitride semiconductor laser element has: (a) forming a nitride semiconductor layer on a substrate; (b) forming a ridge on a surface of the nitride semiconductor; (c) forming a first protective film on the nitride semiconductor layer including the ridge; (d) removing the first protective film from at least a top face of the ridge; (e) forming a conductive layer composed of a two or more of multilayer film with different compositions on the first protective film and the nitride semiconductor layer including the ridge, and introducing a gap at locations of at least at the uppermost conductive layer corresponding to the base portion from the ridge shoulders; and (f) removing part of the conductive layer through a gap to form a void defined the first protective film and the conductive layer at least on the ridge base portions. | 03-08-2012 |
20120064652 | OPTOELECTRONIC DEVICES AND A METHOD FOR PRODUCING THE SAME - A light-emissive device comprising a light-emissive material provided between first and second electrodes such that charge carriers can move between the first and second electrodes and the light-emissive material, wherein the device includes a layer of a polymer blend provided between the first and second electrodes, phase separation of the polymers in the polymer blend having been induced in at least a portion of the polymer blend so as to control the propagation of light emitted by the light-emissive material in a predetermined direction. | 03-15-2012 |
20120064653 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR GROWING NITRIDE SEMICONDUCTOR CRYSTAL LAYER - A method for manufacturing a nitride semiconductor device such as a nitride semiconductor light emitting device, a transistor device or the like. The method includes the steps of forming a buffer crystalline layer of the nitride semiconductor made of Al | 03-15-2012 |
20120064654 | METHOD FOR PRODUCING LIGHT-EMITTING FILM AND LIGHT-EMITTING DEVICE - Provided is a light-emitting film having controllable resistivity, and a high-luminance light-emitting device, which can be driven at a low voltage, using such light-emitting film. The light-emitting film includes Cu as an addition element in a zinc sulfide compound which is a base material, wherein the zinc sulfide compound includes columnar ZnS crystals, and sites formed of copper sulfide on a grain boundary where the ZnS crystals are in contact with each other. | 03-15-2012 |
20120070929 | METHOD FOR FABRICATING WAFER PRODUCT AND METHOD FOR FABRICATING GALLIUM NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE - Provided is a method for fabricating a wafer product including an active layer grown on a gallium oxide substrate and allowing an improvement in emission intensity. In step S | 03-22-2012 |
20120077298 | NITRIDE SEMICONDUCTOR CRYSTAL WITH SURFACE TEXTURE - A nitride semiconductor light emitting device is formed by: forming a resist pattern on a first nitride semiconductor layer formed on a substrate, the resist pattern having a region whose inclination angle relative to a substrate surface changes smoothly as viewed in a cross section perpendicular to the substrate surface; etching the substrate by using the resist pattern as a mask to transfer the resist pattern to the first nitride semiconductor layer; and forming an light emitting layer on the patterned first nitride semiconductor layer. The nitride semiconductor light emitting device can emit near-white light or have a wavelength range generally equivalent to or near visible light range. | 03-29-2012 |
20120077299 | RED LIGHT EMITTING SEMICONDUCTOR DEVICE AND PRODUCTION METHOD OF RED LIGHT EMITTING SEMICONDUCTOR DEVICE - Disclosed are: an environmentally friendly red light-emitting semiconductor element which operates at low voltage, while having sufficient luminous efficiency and sufficient luminous intensity; and a method for manufacturing the same. Specifically disclosed is a method for manufacturing a red light-emitting semiconductor element, wherein an active layer is formed between a p-type layer and an n-type layer in a sequence of the formation steps of the p-type layer and the n-type layer, said active layer being obtained by adding Eu or Pr into GaN, InN, AlN or a mixed crystal thereof by substituting Ga, In or Al with Eu or Pr, using an organic metal vapor phase deposition method under specific temperature conditions in a site wherein light having a wavelength of 618-623 nm can be emitted. Also specifically disclosed is a red light-emitting semiconductor element which is manufactured by the method for manufacturing a red light-emitting semiconductor element. | 03-29-2012 |
20120083060 | INTEGRATION OF CLUSTER MOCVD AND HVPE REACTORS WITH OTHER PROCESS CHAMBERS - The integration of cluster metal-organic chemical vapor deposition (MOCVD) and hydride vapor phase epitaxy (HVPE) reactors with other process chambers is described. For example, a method of fabricating a light-emitting diode (LED) structure described herein includes forming, in a first chamber of a cluster tool, a P-type group III-V material layer above a substrate. Without removing the substrate from the cluster tool a metal contact layer is formed directly on the P-type group III-V material layer in a second chamber of the cluster tool. | 04-05-2012 |
20120083061 | THIN FILM DEPOSITION APPARATUS AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY DEVICE BY USING THE SAME - A thin film deposition apparatus and an organic light-emitting display device by using the same. The thin film deposition apparatus includes an electrostatic chuck, a plurality of chambers; at least one thin film deposition assembly; a carrier; a first power source plug; and a second power source plug. The electrostatic chuck includes a body having a supporting surface that contacts a substrate to support the substrate, wherein the substrate is a deposition target; an electrode embedded into the body and applying an electrostatic force to the supporting surface; and a plurality of power source holes formed to expose the electrode and formed at different locations on the body. | 04-05-2012 |
20120083062 | METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DEVICE - Provided is a method of manufacturing an organic light emitting device including the step of forming an electron injection layer. The step of forming the electron injection layer includes the steps of: vaporizing in a container a dopant material as a raw material of a dopant; causing the vaporized dopant material to pass a heated medium between the container and the substrate; and forming the organic compound into the electron injection layer. According to the method the organic light emitting device which has high electron injection efficiency and can be driven at a low voltage can be obtained. | 04-05-2012 |
20120100654 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - A method of fabricating a III-nitride semiconductor laser device includes: preparing a substrate having a hexagonal III-nitride semiconductor and having a semipolar primary surface; forming a substrate product having a laser structure, an anode electrode and a cathode electrode, the laser structure including a substrate and a semiconductor region formed on the semipolar primary surface; scribing a first surface of the substrate product in part in a direction of the a-axis of the hexagonal III-nitride semiconductor; and carrying out breakup of the substrate product by press against a second surface of the substrate product, to form another substrate product and a laser bar. | 04-26-2012 |
20120100655 | ORGANIC EL DEVICE - According to one embodiment, a method of manufacturing an organic EL device includes providing a structure including a substrate and an electrode positioned above the substrate, and forming an organic layer including a mixture of first and second organic materials above the electrode. The first organic material has a first sublimation point. The second organic material has a second sublimation point higher than the first sublimation point. The formation of the organic layer includes heating an evaporation material including a mixture of the first and second organic materials to an evaporation temperature so as to sublimate the first and second organic materials, and delivering the sublimed first and second organic materials toward the electrode to deposit a mixture including the first and second organic materials above the electrode. The evaporation temperature is, for example, a temperature higher than the second sublimation temperature by 50° C. or more. | 04-26-2012 |
20120107987 | METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a method of manufacturing a semiconductor light emitting device, the method including: forming a light emitting structure by sequentially growing an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a substrate; forming a transparent electrode on the p-type nitride semiconductor layer through a sputtering process; and forming a nitrogen gas atmosphere in an interior of a reaction chamber in which the sputtering process is performed, prior to or during the sputtering process. | 05-03-2012 |
20120107988 | LIGHT EMITTING ELEMENT WITH IMPROVED LIGHT EXTRACTION EFFICIENCY, LIGHT EMITTING DEVICE COMPRISING THE SAME, AND FABRICATING METHOD OF THE LIGHT EMITTING ELEMENT AND THE LIGHT EMITTING DEVICE - Provided is a light emitting element, a light emitting device including the same, and fabrication methods of the light emitting element and light emitting device. The light emitting device comprises a substrate, a light emitting structure including a first conductive layer of a first conductivity type, a light emitting layer, and a second conductive layer of a second conductivity type which are sequentially stacked, a first electrode which is electrically connected with the first conductive layer; and a second electrode which is electrically connected with the second conductive layer and separated apart from the first electrode, wherein at least a part of the second electrode is connected from a top of the light emitting structure, through a sidewall of the light emitting structure, and to a sidewall of the substrate. | 05-03-2012 |
20120107989 | CROSS-LINKABLE IRIDIUM COMPLEXES AND ORGANIC LIGHT-EMITTING DEVICES USING THE SAME - Organic devices comprising an organic layer, wherein the organic layer is non-electroluminescent and comprises a cross-linked metal complex. The cross-linked metal complex may be formed by cross-linking a cross-linkable iridium complex, which comprises a set of ligands coordinated to a central iridium atom. One or more of the ligands have attached thereon, one or more polymerizable groups that are able to polymerize with other molecules to form intermolecular covalent bonds. In some cases, the organic layer may also comprise a dopant. Also provided are a method of making an organic light-emitting device, an iridium complex, and an organic-light emitting device using certain iridium complexes. | 05-03-2012 |
20120115266 | MANUFACTURING METHOD FOR ORGANIC OPTOELECTRONIC THIN FILM - Disclosed is a manufacturing method for an organic optoelectronic thin film comprising the steps of providing a substrate and a first electrode; forming a semiconductor layer on the substrate, wherein the semiconductor layer includes polyethylene glycol (PEG); forming a conductive polymer layer on the first electrode; disposing the substrate and the semiconductor layer on the conductive polymer layer and adhering the semiconductor layer to the conductive polymer layer; and removing the substrate; and forming a second electrode on the semiconductor layer. A first adhesion between the semiconductor layer and the substrate is generated. A second adhesion between the semiconductor layer and the conductive polymer layer is generated. The second adhesion is greater than the first adhesion so that while the substrate is removed, the semiconductor layer and the conductive polymer layer are still adhered. | 05-10-2012 |
20120129289 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A nitride semiconductor light emitting device, and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device includes a substrate, an n-type nitride semiconductor layer disposed on the substrate and including a plurality of V-shaped pits in a top surface thereof, an active layer disposed on the n-type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-shaped pits, and a p-type nitride semiconductor layer disposed on the active layer and including a plurality of protrusions on a top surface thereof. Since the plurality of V-shaped pits are formed in the top surface of the n-type nitride semiconductor layer, the protrusions can be formed on the p-type nitride semiconductor layer as an in-situ process. Accordingly, the resistance to ESD, and light extraction efficiency are enhanced. | 05-24-2012 |
20120142134 | METHOD OF FABRICATING LIGHT EMITTING DIODE - Exemplary embodiments of the present invention relate to a method of fabricating a light emitting diode (LED). According to an exemplary embodiment of the present invention, the method includes growing a first GaN-based semiconductor layer on a substrate at a first temperature by supplying a chamber with a nitride source gas and a first metal source gas, stopping the supply of the first metal source gas and maintaining the first temperature for a first time period after stopping the supply of the first metal source gas, decreasing the temperature of the substrate to the a second temperature after the first time period elapses, growing an active layer of the first GaN-based semiconductor layer at the second temperature by supplying the chamber with a second metal source gas. | 06-07-2012 |
20120149141 | AlGaInN-Based Lasers Produced Using Etched Facet Technology - A process for fabricating AlGaInN-based photonic devices, such as lasers, capable of emitting blue light employs dry etching to form device waveguides and mirrors. The dry etching is preferably performed using a Chemically Assisted Ion Beam Etching (CAIBE) system. | 06-14-2012 |
20120156818 | THIN FILM DEPOSITION APPARATUS AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY DEVICE BY USING THE SAME - A thin film deposition apparatus that may be easily manufactured, that may be easily applied to manufacture large-sized display devices on a mass scale, and that improves manufacturing yield and deposition efficiency, and a method of manufacturing an organic light-emitting display device by using the thin film deposition apparatus are disclosed. The thin film deposition apparatus for forming a thin film on a substrate, the thin film deposition apparatus including: a magnet disposed on a first surface of the substrate; a patterning wheel disposed on a second surface opposite to the first surface of the substrate, rotatable around a rotation axis, and including a plurality of grooves along a peripheral surface; and a patterning wire including a plurality of blockers having shapes corresponding to the plurality of grooves of the patterning wheel, and windable to the patterning wheel. | 06-21-2012 |
20120171796 | GAN LED ELEMENT AND LIGHT EMITTING DEVICE HAVING A STRUCTURE TO REDUCE LIGHT ABSORPTION BY A PAD ELECTRODE INCLUDED THEREIN - A first conductive film | 07-05-2012 |
20120178198 | Self-Aligned Multi-Dielectric-Layer Lift Off Process for Laser Diode Stripes - A method for forming a laser diode structure. The method includes providing a laser diode material having a surface region. A multilayer dielectric mask structure comprising alternating first and second dielectric layers is formed overlying the surface region. The method forms a laser diode structure using the multilayer dielectric mask structure as a mask. The method selectively removes a portion of the first dielectric layer to form one or more undercut regions between the second dielectric layers. A passivation layer overlies the multilayer dielectric mask structure and the undercut region remained intact. The dielectric mask structure is selectively removed, exposing a top surface region of the laser diode structure. A contact structure is formed overlying at least the exposed top surface region. | 07-12-2012 |
20120190148 | METHOD FOR LIFT-OFF OF LIGHT-EMITTING DIODE SUBSTRATE - The present invention discloses a method for lift-off of an LED substrate. By eroding the sidewall of a GaN epitaxial layer, cavity structures are formed, which may act in cooperation with a non-fully filled patterned sapphire substrate from epitaxial growth to cause the GaN epitaxial layer to separate from the sapphire substrate. The method according to an embodiment of the present invention can effectively reduce the dislocation density in the growth of a GaN-based epitaxial layer; improve lattice quality, and realize rapid lift-off of an LED substrate, and has the advantages including low cost, no internal damage to the GaN film, elevated performance of the photoelectric device and improved luminous efficiency. | 07-26-2012 |
20120214269 | TETRAPHENYLSILANE COMPOUNDS SUITABLE AS ORGANIC HOLE-TRANSPORT MATERIALS - A tetraphenylsilane compound suitable as an organic hole-transport material is represented by a formula: | 08-23-2012 |
20120220063 | VERTICAL-STRUCTURE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND A PRODUCTION METHOD THEREFOR - The present invention relates to a vertical-structure semiconductor light emitting device and a production method thereof, more specifically, to a vertical-structure semiconductor light emitting device having a high-performance heat sink support comprising a thick metal film or metal foil. The vertical-structure semiconductor light emitting element produced in accordance with the present invention constitutes a highly reliable light emitting element with absolutely no thermal or mechanical damage since it has the high performance heatsink support and so suffers not fine micro- cracking and can be freely subjected to heat treatment and to post-processing including of a side-surface passivation thin film. | 08-30-2012 |
20120238047 | LIGHT EMITTING DEVICE INCLUDING SEMICONDUCTOR NANOCRYSTALS - A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor. | 09-20-2012 |
20120258559 | Semiconductor substrate, semiconductor device, and manufacturing methods thereof - Exemplary embodiments of the present invention provide a method of fabricating a semiconductor substrate, the method including forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, etching the substrate using a solution to remove the metallic material layer and a portion of the first semiconductor layer, and forming a cavity in the first semiconductor layer under where the metallic material layer was removed. | 10-11-2012 |
20120264247 | Method of Separating Nitride Films from the Growth Substrates by Selective Photo-Enhanced Wet Oxidation - Various embodiments of the present disclosure pertain to separating nitride films from growth substrates by selective photo-enhanced wet oxidation. In one aspect, a method may transform a portion of a III-nitride structure that bonds with a first substrate structure into a III-oxide layer by selective photo-enhanced wet oxidation. The method may further separate the first substrate structure from the III-nitride structure. | 10-18-2012 |
20120270349 | LIQUID COMPOSITIONS FOR INKJET PRINTING OF ORGANIC LAYERS OR OTHER USES - A method of forming an organic layer for an organic electronic device (e.g., an OLED) by using a liquid composition comprising a small molecule organic semiconductor material mixed in a solvent preparation in which the content of higher boiling impurities is reduced. The solvent preparation comprises a high boiling point solvent and 0.1 wt % or less of impurities having a higher boiling point than the solvent. The liquid composition is deposited on a surface by inkjet printing to form the organic layer. Also, provided are liquid compositions which can be used to make organic layers. | 10-25-2012 |
20120295382 | METHOD OF LIFT-OFF PATTERNING THIN FILMS IN SITU EMPLOYING PHASE CHANGE RESISTS - Method for making a patterned thin film of an organic semiconductor. The method includes condensing a resist gas into a solid film onto a substrate cooled to a temperature below the condensation point of the resist gas. The condensed solid film is heated selectively with a patterned stamp to cause local direct sublimation from solid to vapor of selected portions of the solid film thereby creating a patterned resist film. An organic semiconductor film is coated on the patterned resist film and the patterned resist film is heated to cause it to sublime away and to lift off because of the phase change. | 11-22-2012 |
20120295383 | METHOD FOR PRODUCING SEMICONDUCTOR WAFER - Disclosed is a method of producing a semiconductor wafer, which includes: placing a wafer ( | 11-22-2012 |
20120315718 | MANUFACTURING METHOD FOR COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A compound semiconductor light-emitting element characterized by high transmittance of an electrically conductive film, low contact resistance and low sheet resistance of electrically conductive film is manufactured. The manufacturing method for a compound semiconductor light-emitting element of the present invention includes the steps of: forming a semiconductor layer formed of a group III nitride semiconductor, including a light-emitting layer on a substrate; forming an electrically conductive film on the side of the semiconductor layer opposite to the side contacting the substrate; conducting first annealing on the electrically conductive film in an atmosphere containing oxygen; conducting second annealing on the electrically conductive film in an atmosphere not containing oxygen; and exposing the electrically conductive film to atmospheric air between the step of conducting first annealing and the step of conducting second annealing. | 12-13-2012 |
20120322188 | METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a method of manufacturing a semiconductor light emitting device, the method including: sequentially growing a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a semiconductor growth substrate to form a light emitting part; forming a support part on the second conductivity type semiconductor layer to be coupled to the light emitting part; separating the semiconductor growth substrate from the light emitting part; and applying an etching gas to the semiconductor growth substrate to remove a residue of the first conductivity type semiconductor layer from a surface of the semiconductor growth substrate. | 12-20-2012 |
20120322189 | METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved light extraction performance. In the production method, a p cladding layer of p-AlGaN is formed by the MOCVD method on a light-emitting layer at a pressure of 30 kPa and with an Mg concentration of 1.5×10 | 12-20-2012 |
20120322190 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An organic lighting emitting diode display device (OLED display device) and a method of fabricating the same. The OLED display device includes: a substrate; a first electrode disposed on the substrate; an emission layer disposed on the first electrode; a second electrode disposed on the emission layer; and a hole injection layer disposed between the first electrode and the emission layer or between the emission layer and the second electrode, and formed of an inorganic semiconductor material, which evaporates at a temperature of 1100° C. or less. The method includes forming the hole injection layer between the first electrode and the second electrode, by thermally evaporating the inorganic semiconductor material, at a temperature of 1100° C., or less. | 12-20-2012 |
20120329191 | SOLID STATE LIGHTING DEVICES WITH REDUCED CRYSTAL LATTICE DISLOCATIONS AND ASSOCIATED METHODS OF MANUFACTURING - Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and a plurality of hemispherical grained silicon (“HSG”) structures on the substrate surface of the substrate material. The solid state lighting device also includes a semiconductor material on the substrate material, at least a portion of which is between the plurality of HSG structures. | 12-27-2012 |
20130005066 | DONOR FILM FOR THERMAL TRANSFER, METHOD OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DEVICE USING THE DONOR FILM - A donor film that is easily handled in a process without adding a separate member (such as a tray) when an organic thin film is formed on a substrate by using a thermal transfer method is disclosed. In addition, a method of manufacturing the donor film and a method of manufacturing an organic light-emitting device using the donor film are disclosed. The donor film includes: a base film; a light-to-heat conversion (LTHC) layer on the base film; an interlayer on the LTHC layer and that includes a transfer region and a first protrusion corresponding to at least one edge of the LTHC layer; and a transfer layer on the interlayer and including an organic light-emitting material. A rigidity of the first protrusion is higher than a rigidity of the transfer region. | 01-03-2013 |
20130005067 | Anthracene Derivative, Material For Light Emitting Element, Light Emitting Element, Light Emitting Device, And Electronic Device - It is an object of the present invention to provide a novel material capable of realizing excellent color purity of blue, and a light emitting element and a light emitting device using the novel material. Further, it is an object of the present invention to provide which is highly reliable, and a light emitting element and a light emitting device using the novel material. The structure for solving the above problems in accordance with the present invention is an anthracene derivative simultaneously having a diphenylanthracene structure and a carbazole skeleton in a molecule as represented by structural formula (1): | 01-03-2013 |
20130011951 | PRODUCTION METHOD FOR ORGANIC ELECTROLUMINESCENT ELEMENT - Disclosed is a production method for an organic electroluminescent element that is provided with a substrate, an organic laminate with an organic light emitting layer that was formed by a method involving a wet process, and a pair of electrodes, wherein the method produces an organic electroluminescent element with high luminous efficiency, low driving voltage, and a minimal rise in voltage when continuously driven, by applying the coating liquid for said organic light emitting layer, and thereafter, in a drying process, heating the substrate while applying tension in a manner such that a stress that is less than the yield stress is applied to the substrate. | 01-10-2013 |
20130011952 | METHOD FOR PRODUCING ORGANIC ELECTROLUMINESCENCE ELEMENT - Provided is a method for producing an organic electroluminescence device which contains an anode, a cathode and an organic layer between the anode and the cathode where the organic layer contains a light-emitting layer and an adjacent layer adjacent to the light-emitting layer, the method including: applying to the adjacent layer a coating liquid prepared by dissolving or dispersing a light-emitting material and a host material in a solvent, and heating the coating liquid applied to the adjacent layer at a temperature higher than a melting temperature of the host material and higher than a boiling point of the solvent, to thereby form the light-emitting layer, wherein a difference as an absolute value between contact angle A (°) of the light-emitting layer with respect to pure water and contact angle B (°) of the adjacent layer with respect to pure water is 13 (°) or smaller. | 01-10-2013 |
20130011953 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING DEVICE - To improve light emission efficiency and reliability. | 01-10-2013 |
20130017639 | METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICEAANM BOYAMA; ShinyaAACI Kiyosu-shiAACO JPAAGP BOYAMA; Shinya Kiyosu-shi JPAANM Ushida; YasuhisaAACI Kiyosu-shiAACO JPAAGP Ushida; Yasuhisa Kiyosu-shi JP - The present invention is a method for producing a light- emitting device whose p contact layer has a p-type conduction and a reduced contact resistance with an electrode. On a p cladding layer, by MOCVD, a first p contact layer of GaN doped with Mg is formed. Subsequently, after lowering the temperature to a growth temperature of a second p contact layer being formed in the subsequent process, which is 700° C., the supply of ammonia is stopped and the carrier gas is switched from hydrogen to nitrogen. Thereby, Mg is activated in the first p contact layer, and the first p contact layer has a p-type conduction. Next, the second p contact layer of InGaN doped with Mg is formed on the first p contact layer by MOCVD using nitrogen as a carrier gas while maintaining the temperature at 700° C. which is the temperature of the previous process. | 01-17-2013 |
20130017640 | METHOD OF PROCESSING OPTICAL DEVICE WAFERAANM Morikazu; HiroshiAACI Ota-KuAACO JPAAGP Morikazu; Hiroshi Ota-Ku JPAANM Nishino; YokoAACI Ota-kuAACO JPAAGP Nishino; Yoko Ota-ku JP - A method of processing an optical device wafer having an optical device layer including an n-type semiconductor layer and a p-type semiconductor layer stacked over a sapphire substrate, a buffer layer therebetween, allowing peeling of the sapphire substrate. The method includes joining a transfer substrate to the optical device layer, breaking the buffer layer by irradiation with a pulsed laser beam from the sapphire substrate side of the wafer with the transfer substrate joined to the optical device layer, and peeling the sapphire substrate from the optical device wafer with the buffer layer broken, transferring the optical device layer onto the transfer substrate. The pulsed laser beam has a wavelength longer than an absorption edge of the sapphire substrate and shorter than an absorption edge of the buffer layer, and a pulse width set so that a thermal diffusion length will be not more than 200 nm. | 01-17-2013 |
20130017641 | METHOD FOR MANUFACTURING A LIGHT-EMITTING DEVICEAANM Goda; TadashiAACI Tsukuba-shiAACO JPAAGP Goda; Tadashi Tsukuba-shi JP - Provided is a method for manufacturing a light-emitting device ( | 01-17-2013 |
20130023079 | FABRICATION OF LIGHT EMITTING DIODES (LEDS) USING A DEGAS PROCESS - Methods of fabricating light emitting diodes using a degas process are described. For example, a method includes providing a partially formed group III-V material layer stack of an LED. Contaminants are removed from the partially formed group III-V material layer stack by a degas process. Formation of the group III-V material layer stack of the LED is then completed. | 01-24-2013 |
20130029448 | METHODS FOR PRODUCING MATERIALS WITH PHOTO- AND ELECTROLUMINESCENCE PROPERTIES AND SYSTEMS USING SUCH MATERIALS - The invention is directed to a method of preparing polymeric metallomacrocycles having measurable photo- and electroluminescence properties and devices using such materials. In an embodiment, an O-hexyl-3,5-bis(terpyridine)phenol ligand has been synthesized and transformed into a hexagonal Zn(II)-metallomacrocycle by a facile self-assembly procedure capitalizing on terpyridine-Zn(II)-terpyridine connectivity. The material is usable in an OLED device based on the photo- and electro-luminescence characteristics thereof. | 01-31-2013 |
20130052766 | METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE - Manufacture of a light-emitting device by selectively removing a thin film that is formed outside a light-emitting region by ink application. The light-emitting device includes a supporting substrate and a plurality of organic electroluminescent (EL) elements ( | 02-28-2013 |
20130059408 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Certain embodiments provide a method for manufacturing a semiconductor light emitting device, including: providing a first stack film on a first substrate, the first stack film being formed by stacking a p-type nitride semiconductor layer, an active layer having a multiquantum well structure of a nitride semiconductor, and an n-type nitride semiconductor layer in this order; forming an n-electrode on an upper face of the n-type nitride semiconductor layer; and forming a concave-convex region on the upper face of the n-type nitride semiconductor layer by performing wet etching on the upper face of the n-type nitride semiconductor layer with the use of an alkaline solution, except for a region in which the n-electrode is formed. | 03-07-2013 |
20130065341 | METHOD FOR FABRICATING STACKED NITRIDE-COMPOUND SEMICONDUCTOR STRUCTURE AND METHOD FOR FABRICATING NITRIDE-COMPOUND SEMICONDUCTOR LIGHT EMMITING DEVICE - According to one embodiment, a method for fabricating a stacked nitride-compound semiconductor structure includes forming a first protection film on a second surface of a substrate, forming a first nitride-compound semiconductor layer on the first surface of the substrate, forming a second protection film on the first nitride-compound semiconductor layer, removing the first protection film to expose the second surface of the substrate, forming a second nitride-compound semiconductor layer on the second surface of the substrate, and removing the second protection film to expose the first surface of the second nitride-compound semiconductor layer. | 03-14-2013 |
20130065342 | Method for Producing a Light-Emitting Diode - A method is provided for producing a light-emitting diode. A carrier substrate has a silicon surface. A series of layers is deposited on the silicon surface in a direction of growth and a light-emitting diode structure is deposited on the series of layers. The series of layers includes a GaN layer, which is formed with gallium nitride. The series of layers includes a masking layer, which is formed with silicon nitride. The masking layer follows at least part of the GaN layer in the direction of growth. | 03-14-2013 |
20130078752 | METHOD FOR MANUFACTURING DISPLAY DEVICE - According to one embodiment, a method is disclosed for manufacturing a display device. A film material layer is formed on a support substrate. A first heating process for the film material layer at a first temperature to form a film layer and a second heating process for a second region surrounding a first region at a second temperature higher than the first temperature are performed. The first region is provided in a central part of the film layer. A display layer is formed in the first region and a peripheral circuit section is formed at least in a part of the second region. A third heating process is performed for at least a part of the film layer at a third temperature higher than the second temperature. In addition, the film layer is peeled off from the support substrate. | 03-28-2013 |
20130084667 | METHOD FOR MANUFACTURING ORGANIC LIGHT-EMITTING DEVICE - A method for manufacturing a light-emitting device includes a step of forming an etching resistant protection layer on a substrate provided with an organic planarizing layer, a step of forming a plurality of electrodes on the etching resistant protection layer, a step of forming an organic compound layer on the substrate provided with the plurality of electrodes, a step of forming a resist layer on the organic compound layer formed on parts of electrodes among the plurality of electrodes using a photolithographic method, and a step of removing the organic compound layer in a region not covered with the resist layer by dry etching, wherein an entire surface of the organic planarizing layer on the substrate on which steps up to the step of forming the plurality of electrodes have been performed is covered with at least one of the etching resistant protection layer and the electrode. | 04-04-2013 |
20130089941 | VAPOR DEPOSITION METHOD, VAPOR DEPOSITION DEVICE AND ORGANIC EL DISPLAY DEVICE - A vapor deposition source ( | 04-11-2013 |
20130095591 | MANUFACTURING METHOD OF SOLID STATE LIGHT EMITTING ELEMENT - A manufacturing method of a solid state light emitting element is provided. A plurality of protrusion structures separated to each other are formed on a first substrate. A buffer layer is formed on the protrusion structures and fills the gaps between protrusion structures. An epitaxial growth layer is formed on the buffer layer to form a first semiconductor stacking structure. The first semiconductor stacking structure is inverted to a second substrate, so that the first semiconductor epitaxial layer and the second substrate are connected to form a second semiconductor stacking structure. The buffer layer is etched by a first etchant solution to form a third semiconductor stacking structure. A second etchant solution is used to permeate through the gaps between the protrusion structures, so that the protrusion structures are etched completely. The first substrate is removed from the third semiconductor stacking structure to form a fourth semiconductor stacking structure. | 04-18-2013 |
20130095592 | METHOD FOR FABRICATING ORGANIC EL DEVICE - Forming an adhesive layer on a part of a surface of the flexible substrate; forming a magnetic material layer on the surface of the flexible substrate in a part other than the part on which the adhesive layer is formed; temporarily holding, using magnetic force, the flexible substrate on which the adhesive layer and the magnetic material layer are formed, above an inflexible substrate having magnetic property; fixing the flexible substrate with the inflexible substrate via the adhesive layer; forming a layer composing an organic EL unit on the flexible substrate temporarily held using the magnetic force and fixed via the adhesive layer; removing the part in which the flexible substrate and the inflexible substrate are fixed via the adhesive layer; separating the flexible substrate from the inflexible substrate; and separating the magnetic material layer from the flexible substrate separated from the inflexible substrate are included. | 04-18-2013 |
20130122625 | METHOD FOR MANUFACTURING ORGANIC ELECTROLUMINESCENT ELEMENT - A method for manufacturing an organic electroluminescent element that includes an anode ( | 05-16-2013 |
20130130422 | FABRICATING METHOD OF LIGHT EMITTING DEVICE AND FORMING METHOD OF ORGANIC LAYER - A fabricating method of a light emitting device is provided. In the fabricating method, a substrate having a first electrode layer is provided. An organic film solution that includes an organic material, a solid medium, and a solvent is provided. The solid medium is capable of sublimation, and the organic material and the solid medium are mixed into the solvent. An organic film is formed on the first electrode layer by using the organic film solution. The solvent and the solid medium are removed to form an organic functional layer that has the organic material. A second electrode layer is formed on the organic functional layer. | 05-23-2013 |
20130130423 | Method of Making a Flexible Optoelectronic Device Having Inverted Electrode Structure - A flexible optoelectronic device having inverted electrode structure is disclosed. The flexible optoelectronic device having inverted electrode structure includes a flexible plastic substrate having a cathode structure, an n-type oxide semiconductor layer, an organic layer, and an anode. The n-type oxide semiconductor layer is disposed on the cathode structure. The organic layer is disposed on the n-type oxide semiconductor layer. The anode is electrically connected with the organic layer. | 05-23-2013 |
20130137205 | METHOD OF MANUFACTURING ORGANIC ELECTROLUMINESCENT DEVICE - A method of manufacturing an organic electroluminescent device includes a step of forming a masking layer and an intermediate layer on a first organic compound layer such that the masking layer and the intermediate layer have a predetermined pattern, a step of patterning the first organic compound layer using the masking layer and the intermediate layer, a step of forming a second organic compound layer, and a step of removing the intermediate layer and the second organic compound layer formed thereon in such a manner that the intermediate layer is contacted with a dissolving liquid for dissolving the intermediate layer. In the method, the first and second organic compound layers are protected by covering the first and second organic compound layers with a sacrificial layer until the patterning of the first and second organic compound layers is completed. | 05-30-2013 |
20130137206 | ORGANIC LIGHT-EMITTING MATERIAL, ORGANIC LIGHT-EMITTING ELEMENT USING THE SAME AND METHOD OF FORMING THE SAME - The present invention provides compound of formula (I) | 05-30-2013 |
20130143345 | Method of Fabricating Light-Emitting Device and Apparatus for Manufacturing Light-Emitting Device - In this embodiment, an interval distance between a deposition source holder 17 and an object on which deposition is performed (substrate | 06-06-2013 |
20130143346 | METHOD FOR PRODUCING LIGHT-EMITTING ELEMENTS - A light-emitter is configured so that at least a hole injection layer and a light-emitting layer are laminated between a first electrode and a second electrode, and the light-emitting layer is formed in an area defined by a bank. In the area defined by the bank, the hole injection layer is formed so as to have a recess in an upper surface thereof. An upper peripheral edge of the recess is covered with a part of the bank. The light-emitting layer is formed with respect to the recess formed in the hole injection layer by a laser transfer method. | 06-06-2013 |
20130164873 | Nitride-Based Light-Emitting Device - A nitride-based light-emitting device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a nitride-based buffer layer formed by nitrogen, a first group III element, and optionally, a second group III element, a first nitride-based semiconductor layer, a light-emitting layer, and a second nitride-based semiconductor layer. | 06-27-2013 |
20130183782 | METHOD FOR PRODUCING ORGANIC EL ELEMENT - An object of the present invention is to provide a method for an organic EL element in which the organic EL element can be readily produced by a roll to roll method, in the case where the respective components of the organic EL element are sequentially laminated from a cathode. A method for manufacturing an organic EL element of a preferable embodiment is a method for manufacturing an organic EL element by laminating, on a supporting substrate, a cathode, an electron injection layer, a light-emitting layer and an anode to manufacture an organic EL element by a roll to roll method, the manufacturing method including a step for forming an electron injection layer on the cathode of the supporting substrate on which the cathode has been formed, by applying an ink including an ionic polymer so as to form a film, a step for forming a light-emitting layer on the electron injection layer, and a step for forming an anode on the light-emitting layer. | 07-18-2013 |
20130189807 | METHODS FOR FABRICATING DEVICES INCLUDING PHOTOVOLTAIC DEVICES - Embodiments described herein provide methods for processing various polymer materials for use in devices, such as photovoltaic devices. In some cases, oxidative chemical vapor deposition (oCVD) may be used to process conjugated polymers, including relatively insoluble conjugated polymers. The methods described herein provide processing techniques that may be used to synthesize and/or process polymers, such as unsubstituted thiophene. | 07-25-2013 |
20130189808 | SELECTIVE OLED VAPOR DEPOSITION USING ELECTRIC CHARGES - A selective organic emissive material deposition technique is disclosed. A charged organic emissive material may be mixed with a carrier gas and ejected towards a charged intended area of a substrate. The charge for the emissive material may be such that the organic emissive material is attracted to the charged intended area of the substrate and, accordingly, deposited selectively over the charged intended area of the substrate. Additionally, surrounding unintended areas of the substrate may be charged such that the charged organic emissive material is repelled by the unintended areas. | 07-25-2013 |
20130203198 | Micro-Pattern Forming Method, and Micro-Channel Transistor and Micro-Channel Light-Emitting Transistor Forming Method Using Same - Provided is a method of forming a micropattern according to an aspect of the present invention. The method of forming a micropattern may include forming an organic wire or organic-inorganic hybrid wire mask pattern having a circular or elliptical cross section on a substrate, forming a material layer on an entire surface of the substrate having the organic wire or organic-inorganic hybrid wire mask pattern formed thereon, and removing the organic wire or organic-inorganic hybrid wire mask pattern from the substrate to allow only the material layer on a portion of the substrate having no organic wire or organic-inorganic hybrid wire mask pattern formed thereon to be remained. | 08-08-2013 |
20130230937 | METHOD FOR MANUFACTURING PERPENDICULAR LED - A method for manufacturing a perpendicular LED for preventing bending of a wafer while reducing the time required for manufacturing to improve the mass production yield of perpendicular LEDs includes: growing an LED compound semiconductor structure on a sapphire substrate; forming an adhesive layer which is stacked on the LED compound semiconductor structure in the order of a first solder layer, a heat-emitting layer, and a second solder layer; forming a conductive substrate on the adhesive layer; coupling the first solder layer and the second solder layer by means of the heat which is generated from reacting the heat-emitting layer; and removing the sapphire substrate. | 09-05-2013 |
20130252362 | METHOD FOR MANUFACTURING LIGHT EMITTING DIODE CHIP - A manufacturing method of an LED chip includes the following steps: providing a substrate; forming a light emitting layer comprising an n-type semiconductor layer and a p-type semiconductor layer on the substrate; forming a pair of electrodes electrically connected the n-type semiconductor layer and the p-type semiconductor layer, respectively; connecting a bonding wire to one of the electrodes by adding melted metal to a portion of a top surface of the electrode, a ratio between an area of the portion of the top surface of the electrode and the top surface of the electrode being no less 6:10; and solidifying the melted metal to form a bonding pad to connect the bonding wire and the electrode together. | 09-26-2013 |
20130252363 | GROUP III NITRIDE NANOROD LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THEREOF - A group III nitride nanorod light emitting device and a method of manufacturing thereof. The method includes preparing a substrate, forming an insulating film including one or more openings exposing parts of the substrate on the substrate, growing first conductive group III nitride nanorod seed layers on the substrate exposed through the openings by supplying a group III source gas and a nitrogen (N) source gas thereto, growing first conductive group III nitride nanorods on the first conductive group III nitride nanorod seed layers by supplying the group III source gas and an impurity source gas in a pulse mode and continuously supplying the N source gas, forming an active layer on a surface of each of the first conductive group III nitride nanorods, and forming a second conductive nitride semiconductor layer on the active layer. | 09-26-2013 |
20130252364 | VAPOR DEPOSITION DEVICE, VAPOR DEPOSITION METHOD AND ORGANIC EL DISPLAY DEVICE - A vapor deposition source ( | 09-26-2013 |
20130260501 | VAPOR DEPOSITION DEVICE, VAPOR DEPOSITION METHOD, AND METHOD OF MANUFACTURING ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE - A vapor deposition device ( | 10-03-2013 |
20130267055 | DEPOSITION SUBSTRATE OF DEPOSITION APPARATUS, METHOD OF FORMING LAYER USING THE SAME, AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE - Provided are a deposition substrate of a deposition apparatus, a method of forming a layer using the same, and a method of manufacturing an organic light emitting diode (OLED) display device. The method of forming a layer using the deposition substrate includes preparing a substrate, forming a heating conductive layer for Joule heating on the substrate, forming a first insulating layer on the heating conductive layer for Joule heating and including a groove or hole, forming a deposition material layer on a top surface of the first insulating layer having the groove or hole, and applying an electric field to the heating conductive layer for Joule heating to perform Joule-heating on the deposition material layer. Thus, the method is suitable for manufacturing a large-sized device. | 10-10-2013 |
20130273679 | DEPOSITION METHOD, DEPOSITION FILM, AND METHOD FOR PRODUCING ORGANIC ELECTROLUMINESCENCE DISPLAY DEVICE - A vapor deposition method of the present invention includes the steps of (i) preparing a mask unit including a shadow mask ( | 10-17-2013 |
20130280841 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A high-quality light emitting device is provided which has a long-lasting light emitting element free from the problems of conventional ones because of a structure that allows less degradation, and a method of manufacturing the light emitting device is provided. After a bank is formed, an exposed anode surface is wiped using a PVA (polyvinyl alcohol)-based porous substance or the like to level the surface and remove dusts from the surface. An insulating film is formed between an interlayer insulating film on a TFT and the anode. Alternatively, plasma treatment is performed on the surface of the interlayer insulating film on the TFT for surface modification. | 10-24-2013 |
20130295706 | Organic Electroluminescent Element and Manufacturing Method Thereof, and Phosphorus-Containing Organic Compound and Manufacturing Method Thereof - An organic electroluminescent element comprising an anode, a cathode and a plurality of organic compound layers sandwiched between the anode and cathode, the organic compound layers including: a hole-transporting layer made of an organic compound insoluble in alcohols; and an electron-transporting layer formed on the hole-transporting layer by a wet method, the electron-transporting layer being made of a phosphorus-containing organic compound soluble in the alcohols. | 11-07-2013 |
20130295707 | METHOD FOR THE PRODUCTION OF AN ORGANIC LIGHT EMITTING ILLUMINANT - In a method for producing an organic light emitting illuminant, a base electrode layer is formed over a substrate, an organic light emitting layer is formed over at least one portion of the base electrode layer, and a top electrode layer is formed over at least one portion of the organic light emitting layer, the layers being formed in the shape of strips. The strip-shaped formation of the layers is carried out in a coating process in an in-line vacuum coating system having stationary shadowing masks on the advancing substrate such that at least one area of the base electrode layer remains uncoated once the layers have been formed. | 11-07-2013 |
20130302930 | METHOD OF MANUFACTURING GALLIUM NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE - A method of manufacturing a gallium nitride (GaN)-based semiconductor light emitting device is provided. A light emitting structure is formed and includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer formed of a nitride semiconductor containing gallium (Ga) on a substrate. A metal layer is disposed on the p-type semiconductor layer, and a heat treatment is performed to form a gallium(Ga)-metal compound. The gallium(Ga)-metal compound formed on the p-type semiconductor layer is removed. An electrode is disposed on an upper surface of the p-type semiconductor layer from which the gallium(Ga)-metal compound has been removed. The forming of the gallium(Ga)-metal compound includes forming a gallium vacancy in a surface of the p-type semiconductor layer. | 11-14-2013 |
20130309796 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part provided therebetween. The light emitting part includes a plurality of light emitting layers. Each of the light emitting layers includes a well layer region and a non-well layer region which is juxtaposed with the well layer region in a plane perpendicular to a first direction from the n-type semiconductor layer towards the p-type semiconductor layer. Each of the well layer regions has a common An In composition ratio. Each of the well layer regions includes a portion having a width in a direction perpendicular to the first direction of 50 nanometers or more. | 11-21-2013 |
20130316481 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - A method for manufacturing a semiconductor light emitting device is provided. The method includes forming a light emitting structure by sequentially growing a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a semiconductor growth substrate A support unit is disposed on the second conductivity-type semiconductor layer, so as to be combined with the light emitting structure. The semiconductor growth substrate is separated from the light emitting structure. An interface between the semiconductor growth substrate and a remaining light emitting structure is wet-etched such that the light emitting structure remaining on the separated semiconductor growth substrate is separated therefrom. The semiconductor growth substrate is cleaned. | 11-28-2013 |
20130316482 | In Situ Synthesis of Nanoparticles on Substrates by Inkjet Printing - Nanoparticles may be formed on a substrate by mixing precursor solutions deposited by an inkjet printer. A first solution is deposited on a substrate from a first inkjet print cartridge. Then, a second solution is deposited on the substrate from a second inkjet print cartridge. The solutions may be printed in an array of droplets on the substrate. Nanoparticles form when droplets of the first solution overlap with droplets of the second solution. In one example, the nanoparticles may be gold nanoparticles formed from mixing a first solution of 1,2-dichlorobenze (DCB) and oleylamine and a second solution of gold chloride trihydrite and dimethyl sulfoxide (DMSO). The nanoparticles may be incorporated into optoelectronic devices. | 11-28-2013 |
20130323868 | Deposition Apparatus and Method for Manufacturing Organic Light Emitting Diode Display Using the Same - A deposition apparatus includes: a deposition source including a spray nozzle linearly arranged in a first direction and discharging a deposition material; and a pair of angle control members disposed at both sides of the deposition source and controlling a discharging direction angle of the deposition material. Each angle control member includes a rotation axis parallel to the first direction, and a plurality of shielding plates inst7lled about the rotation axis and separated from each other by a predetermined interval around the rotation axis. Although the deposition angle is changed according to the increasing of the process time, the deposition angle is compensated to form a uniform thin film. Also, the organic thin film may be uniformly deposited through each pixel of an organic light emitting diode (OLED) display, thereby increasing luminance uniformity for each pixel. | 12-05-2013 |
20130323869 | Organic Material, Light-Emitting Element, Light-Emitting Device, Electronic Appliance, and Lighting Device - A novel organic material with fewer impurities, a light-emitting element including the organic material, and a light-emitting device, an electronic appliance, and a lighting device each of which includes the light-emitting element are provided. The organic material is obtained by coupling an aryl halide and an aryl boronic acid or an aryl boronic acid ester. The aryl boronic acid or the aryl boronic acid ester includes at least one of a first impurity in which a boryl group of the aryl boronic acid or the aryl boronic acid ester is substituted by hydrogen and a second impurity in which a molecular mass of 16 or 17 is added to the molecular mass of the first impurity. The concentration of an impurity other than the first impurity and the second impurity is 1% or lower. | 12-05-2013 |
20130323870 | ORGANIC COMPOUND, ANTHRACENE DERIVATIVE, AND LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, AND ELECTRONIC DEVICE USING THE ANTHRACENE DERIVATIVE - Objects of the present invention are to provide novel anthracene derivatives and novel organic compounds; a light-emitting element that has high emission efficiency; a light-emitting element that is capable of emitting blue light with high luminous efficiency; a light-emitting element that is capable of operation for a long time; and a light-emitting device and an electronic device that have lower power consumption. An anthracene derivative represented by a general formula (1) and an organic compound represented by a general formula (17) are provided. A light-emitting element that has high emission efficiency can be obtained by use of the anthracene derivative represented by the general formula (1). Further, a light-emitting element that has a long life can be obtained by use of the anthracene derivative represented by the general formula (1). | 12-05-2013 |
20130323871 | METHOD FOR MANUFACTURING ORGANIC ELECTROLUMINESCENT ELEMENT - A method for manufacturing an organic electroluminescent element including, in the following order, an anode, a light-emitting layer, an electron injection layer, and a cathode, the method including the steps of: (A) forming the anode; (B) forming the light-emitting layer; (C) forming the electron injection layer; and (D) forming the cathode, in which the step (C) includes (i) applying an application liquid containing an ionic polymer to form a thin film, (ii) heating the thin film formed, (iii) storing a partially finished organic electroluminescent element obtained in (ii), and thereafter, (iv) heating the thin film again. | 12-05-2013 |
20130337598 | MANUFACTURING PROCESS OF VERTICAL TYPE SOLID STATE LIGHT EMITTING DEVICE - A manufacturing process of a vertical type solid state light emitting device is provided. A substrate is provided. M metal nitride buffer layer is formed on the substrate, and a breakable structure containing M metal droplet structures is formed on the buffer layer. A first type semiconductor layer, an active layer and a second type semiconductor layer are sequentially formed on the breakable structure. A second type electrode is formed on the second type semiconductor layer. The first type semiconductor layer, the active layer, the second type semiconductor layer and the second type electrode are stacked to form a light emitting stacking structure. The breakable structure is damaged to separate from the light emitting stacking structure, so that a surface of the first type semiconductor layer of the light emitting stacking structure is exposed. A first type electrode is formed on the surface of the first type semiconductor layer. | 12-19-2013 |
20130344635 | Composition, Method for Manufacturing Thin Film, and Method for Manufacturing Light-Emitting Element - It is an object to provide a composition in which an anthracene derivative is dissolved and a technique in which a thin film that has a favorable film quality is formed by a wet process using the composition. In addition, it is another object to manufacture a highly reliable light-emitting element using the composition at low cost with high productivity. A composition having a solvent and an anthracene derivative having one anthracene structure and one carbazolyl group which is bonded to the anthracene structure directly or through a phenyl group is formed. A thin film with a favorable film quality can be formed by a wet process using the composition. Accordingly, a highly reliable light-emitting element can be manufactured using such a thin film. | 12-26-2013 |
20140004642 | MANUFACTURING METHOD FOR ORGANIC ELECTROLUMINESCENCE DEVICE | 01-02-2014 |
20140017840 | NITRIDE-BASED LIGHT-EMITTING DEVICE - A nitride-based light-emitting device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a nitride-based buffer layer formed by nitrogen, a first group III element, and optionally, a second group III element, a first nitride-based semiconductor layer, a light-emitting layer, and a second nitride-based semiconductor layer. | 01-16-2014 |
20140024159 | Optoelectronic Device Containing at Least One Active Device Layer Having a Wurtzite Crystal Structure, and Methods of Making Same - Optoelectronic devices, such as light-emitting diodes, laser diodes, image sensors, optical detectors, etc., made by depositing (growing) one or more epitaxial semiconductor layers on a monocrystalline lamellar/layered substrate so that each layer has a wurtzite crystal structure. In some embodiments, the layers are deposited and then one or more lamellas of the starting substrate are removed from the rest of the substrate. In one subset of such embodiments, the removed lamella(s) is/are partially or entirely removed. In other embodiments, one or more lamellas of the starting substrate are removed prior to depositing the one or more wurtzite-crystal-structure-containing layer(s). | 01-23-2014 |
20140030836 | Silicon Carbide Lamina - A method of fabricating an electronic device includes providing a silicon carbide or diamond-like carbon donor body and implanting ions into a first surface of the donor body to define a cleave plane. After implanting, an epitaxial layer is formed on the first surface, and a temporary carrier is coupled to the epitaxial layer. A lamina is cleaved from the donor body at the cleave plane, and the temporary carrier is removed from the lamina. In some embodiments a light emitting diode or a high electron mobility transistor is fabricated from the lamina and epitaxial layer. | 01-30-2014 |
20140030837 | METHOD OF FABRICATING GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICE - A method of fabricating a gallium nitride (GaN)-based semiconductor device. The method includes preparing a GaN substrate having lower and upper surfaces; growing GaN-based semiconductor layers on the upper surface of the GaN substrate to form a semiconductor stack; forming a support substrate on the semiconductor stack; and separating the GaN substrate from the semiconductor stack. The separating of the GaN substrate includes irradiating a laser from the lower surface of the GaN substrate. The laser is transmitted through the lower surface of the GaN substrate and forms a laser absorption region inside a structure consisting of the GaN substrate and the semiconductor stack. | 01-30-2014 |
20140038333 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A display device includes a substrate, a first conductive film pattern including a gate electrode and a first capacitor electrode on the substrate, a gate insulating layer pattern on the first conductive film pattern, a polycrystalline silicon film pattern including an active layer and a second capacitor electrode on the gate insulating layer pattern, an interlayer insulating layer on the polycrystalline silicon film pattern, a plurality of first contact holes through the gate insulating layer pattern and the interlayer insulating layer to expose a portion of the first conductive film pattern, a plurality of second contact holes through the interlayer insulating layer to expose a portion of the polycrystalline silicon film pattern, and a second conductive film pattern including a source electrode, a drain electrode, and a pixel electrode on the interlayer insulating layer. | 02-06-2014 |
20140038334 | LASER-INDUCED FLAW FORMATION IN NITRIDE SEMICONDUCTORS - An embodiment is a method to induce flaw formation in nitride semiconductors. Regions of a thin film structure are selectively decomposed within a thin film layer at an interface with a substrate to form flaws in a pre-determined pattern within the thin film structure. The flaws locally concentrate stress in the pre-determined pattern during a stress-inducing operation. The stress-inducing operation is performed. The stress-inducing operation causes the thin film layer to fracture at the pre-determined pattern. | 02-06-2014 |
20140051198 | METHOD AND APPARATUS FOR MANUFACTURING ORGANIC EL DEVICE - Provided is a method for manufacturing an organic EL device, including: a vapor deposition step of forming an organic layer over a substrate moving relative to a nozzle by discharging a vaporized organic layer-forming material through the nozzle. The vapor deposition step is performed so that a light emitting region formed of the organic layer and having a width A (mm) in a direction perpendicular to a direction in which the substrate is moving is formed, and so that W≧A+2×h (where h≦5 mm) is satisfied, where a length of an opening of the nozzle in the direction perpendicular to the direction in which the substrate is moving is denoted by W (mm), and a distance between the opening and the substrate is denoted by h (mm). | 02-20-2014 |
20140057379 | Photoresist Film and Manufacturing Method for Organic Light Emitting Display Device Using the Same - Disclosed is a photoresist film including a light-to-heat conversion layer on a support film, and a thermo-responsive polymer layer on the light-to-heat conversion layer, wherein the photoresist film is easily detached from a transfer substrate through a temperature adjustment and detach film since the photoresist film includes thermo-responsive polymer. | 02-27-2014 |
20140057380 | NITRIDE-TYPE SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCTION THEREOF - A nitride-based semiconductor device includes a p-type Al | 02-27-2014 |
20140073076 | STABLE BLUE PHOSPHORESCENT ORGANIC LIGHT EMITTING DEVICES - Novel combination of materials and device architectures for organic light emitting devices are provided. In some aspects, specific charge carriers and solid state considerations are features that may result in a device having an unexpectedly long lifetime. In some aspects, emitter purity is a feature that may result in devices having unexpectedly long lifetime. In some aspects, structural and optical considerations are features that may result in a device having an unexpectedly long lifetime. In some aspects, an emissive layer including an organic phosphorescent emissive dopant and an organic carbazole host material results in devices having an unexpectedly long lifetime. | 03-13-2014 |
20140080240 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method can prepare a substrate unit including a base substrate, an intermediate crystal layer, and a first mask layer. The intermediate crystal layer has a major surface having a first region, a second region, and a first intermediate region. The first mask layer is provided on the first intermediate region. The method can implement a first growth to grow a first lower layer on the first region and grow a second lower layer on the second region. The first and second lower layers include a semiconductor crystal. The method can implement a second growth to grow a second upper layer while growing a first upper layer to cover the first mask layer with the first and second upper layers. The method can implement cooling to separate the first and second upper layers. | 03-20-2014 |
20140080241 | MANUFACTURING METHOD OF ORGANIC EL ELEMENT - A method of manufacturing an organic EL element having a pair of electrodes and an organic functional layer disposed therebetween, the pair of electrodes consisting of an upper electrode and a lower electrode, comprising: forming the upper electrode on the organic functional layer by a magnetron sputtering method with a film-forming power density no less than 4.5 W/cm | 03-20-2014 |
20140087506 | ZINC OXIDE-CONTAINING TRANSPARENT CONDUCTIVE ELECTRODE - A transparent conductive electrode stack containing a work function adjusted zinc oxide is provided. Specifically, the transparent conductive electrode stack includes a layer of zinc oxide and a layer of a work function modifying material. The presence of the work function modifying material in the transparent conductive electrode stack shifts the work function of the layer of zinc oxide to a higher value for better hole injection into the OLED device as compared to a transparent conductive electrode that includes only a layer of zinc oxide and no work function modifying material. | 03-27-2014 |
20140087507 | Polythiophene-Containing Ink Compositions For Inkjet Printing - Ink compositions comprising polythiophenes and methicone that are formulated for inkjet printing the hole injecting layer (HIL) of an organic light emitting diode (OLED) are provided. Also provided are methods of inkjet printing the HILs using the ink compositions. | 03-27-2014 |
20140106491 | METHOD OF FABRICATING PATTERNED SUBSTRATE - A method of fabricating a patterned substrate, with which the optical performance of a photovoltaic cell including an organic solar cell and an organic light-emitting diode (OLED) can be improved. The method includes generating electrostatic force on a surface of a substrate by treating the substrate with electrolytes, causing nano-particles to be adsorbed on the surface of the substrate, etching the surface of the substrate using the nano-particles as an etching mask, and removing the nano-particles residing on the surface of the substrate. | 04-17-2014 |
20140106492 | METHODS FOR FABRICATING AN OPTOELECTRONIC DEVICE - The invention relates to methods for fabricating an optoelectronic device, including: directly applying a printing ink composition to a patterning process, wherein the printing ink composition includes (1) at least one compound selected from the group of compounds represented by Chemical Formula 1, Chemical Formula 2, Chemical Formula 3, and mixtures thereof as disclosed herein in an amount of 0.01-90 wt % based on the total weight of the composition and (2) at least one material for an optoelectronic device. | 04-17-2014 |
20140106493 | P-TYPE DOPING LAYERS FOR USE WITH LIGHT EMITTING DEVICES - A light emitting diode (LED) comprises an n-type Group III-V semiconductor layer, an active layer adjacent to the n-type Group III-V semiconductor layer, and a p-type Group III-V semiconductor layer adjacent to the active layer. The active layer includes one or more V-pits. A portion of the p-type Group III-V semiconductor layer is in the V-pits. A p-type dopant injection layer provided during the formation of the p-type Group III-V layer aids in providing a predetermined concentration, distribution and/or uniformity of the p-type dopant in the V-pits. | 04-17-2014 |
20140127845 | OVJP PATTERNING OF ELECTRONIC DEVICES - A method for forming an electronic device such as a passive color OLED display. Bottom electrodes are patterned onto a substrate in rows. Raised posts formed by photoresist are patterned into columns oriented orthogonally to the bottom row electrodes. One or more organic layers, such as R, G, B organic emissive layers are patterned over the raised posts and bottom electrodes using organic vapor jet printing (OVJP). An upper electrode layer is applied over the entire device and forms electrically isolated columnar electrodes due to discontinuities in the upper electrode layer created by the raised columnar posts. This permits patterning of the upper electrodes over the organic layers without using photolithography. A device formed by this method is also described. | 05-08-2014 |
20140127846 | METHOD FOR PRODUCING ORGANIC LIGHT-EMITTING ELEMENT - Method for manufacturing organic EL element including anode, hole injection layer, buffer layer, light-emitting layer, and cathode, layered on substrate in the stated order, and banks defining a light-emission region, and having excellent light-emission characteristics, due to the hole injection layer having excellent hole injection efficiency, being a tungsten oxide layer including an oxygen vacancy structure, formed under predetermined conditions to have an occupied energy level within a binding energy range from 1.8 eV to 3.6 eV lower than a lowest binding energy of a valence band, and after formation, subjected to atmospheric firing at a temperature within 200° C.-230° C. inclusive for a processing time of 15-45 minutes inclusive to have increased film density and improved dissolution resistance against an etching solution, a cleaning liquid, etc., used in a bank forming process. | 05-08-2014 |
20140127847 | FINE TUNING OF EMISSION SPECTRA BY COMBINATION OF MULTIPLE EMITTER SPECTRA - A method of fabricating a first device includes providing a first container that contains, in a desired proportion, a first organic emitting material having a first peak wavelength, a second organic emitting material having a second peak wavelength; providing a substrate having a first electrode disposed thereon; depositing an emissive layer over the first electrode, wherein the first container is a source of material for depositing, and wherein the emissive layer has a homogeneous composition and comprises the first and second organic emitting materials in the desired proportion; depositing a second electrode over the first emissive layer, and wherein the second peak wavelength is between 0 and 40 nm greater than the first peak wavelength. | 05-08-2014 |
20140147949 | MASK STRIPS AND METHOD FOR MANUFACTURING ORGANIC LIGHT EMITTING DIODE DISPLAY USING THE SAME - A mask strip for manufacturing an organic light emitting diode (OLED) display is disclosed. In one aspect, the mask strip is extended in a length direction and fixed to a frame. The frame includes a plurality of masking pattern units arranged in a matrix format in which an opening pattern includes a plurality of rows that are substantially parallel to a width direction crossing the length direction and a plurality of columns that are substantially parallel to the length direction. The rows respectively have a curvature which is concave toward an inside of the masking pattern unit, and the columns respectively have a curvature which is convex toward an outside of the masking pattern unit. | 05-29-2014 |
20140147950 | METHOD OF FABRICATING ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE - A method of fabricating an organic light emitting diode display device includes forming a first electrode over a substrate including a display region, which includes a plurality of pixel regions, the first electrode formed in each of the plurality of pixel regions; forming a first bank and a second bank, the first bank formed on edges of the first electrode and having a first width and a first thickness, and the second bank formed on the first bank and having a second width smaller than the first width; forming an organic emitting layer on the first electrode and a portion of the first bank; and forming a second electrode on the organic emitting layer and covering an entire of the display region. | 05-29-2014 |
20140147951 | DEPOSITION OF SEMICONDUCTOR NANOCRYSTALS FOR LIGHT EMITTING DEVICES - A method of depositing semiconductor nanocrystals on a surface can include applying a voltage to the nanocrystals. | 05-29-2014 |
20140147952 | METHOD FOR PRODUCING ORGANIC LIGHT-EMITTING ELEMENT - Method for manufacturing organic EL element including anode, hole injection layer, buffer layer, light-emitting layer, and cathode, layered on substrate in the stated order, and banks defining a light-emission region, and having excellent light-emission characteristics, due to the hole injection layer having excellent hole injection efficiency, being a tungsten oxide layer including an oxygen vacancy structure, formed under predetermined conditions to have an occupied energy level within a binding energy range from 1.8 eV to 3.6 eV lower than a lowest binding energy of a valence band, and after formation, subjected to atmospheric firing at a temperature within 200° C.-230° C. inclusive for a processing time of 15-45 minutes inclusive to have increased film density and improved dissolution resistance against an etching solution, a cleaning liquid, etc., used in a bank forming process. | 05-29-2014 |
20140147953 | Method for Peeling Group 13 Element Nitride Film | 05-29-2014 |
20140147954 | METHOD OF MANUFACTURING LIGHT EMITTING DIODE AND LIGHT EMITTING DIODE MANUFACTURED THEREBY - There is provided a method of manufacturing a light emitting diode and a light emitting diode manufactured by the same. The method includes growing a first conductivity type nitride semiconductor layer and an undoped nitride semiconductor layer on a substrate sequentially in a first reaction chamber; transferring the substrate having the first conductivity type nitride semiconductor layer and the undoped nitride semiconductor layer grown thereon to a second reaction chamber; growing an additional first conductivity type nitride semiconductor layer on the undoped nitride semiconductor layer in the second reaction chamber; growing an active layer on the additional first conductivity type nitride semiconductor layer; and growing a second conductivity type nitride semiconductor layer on the active layer. | 05-29-2014 |
20140154826 | ETCH STOP LAYERS IN NITRIDE SEMICONDUCTORS CREATED BY POLARITY INVERSION - A method of producing a semiconductor device can include receiving a Group III-N wafer as a substrate, initiating a first inversion domain boundary layer to form a thin etch stop layer, terminating the etch stop layer with a second inversion domain boundary layer, and subsequently continuing the active region growth. | 06-05-2014 |
20140154827 | Photoresist Employing Photodimerization Chemistry and Method for Manufacturing Organic Light Emitting Diode Display Using the Same - A highly fluorinated photoresist employing a photodimerization chemistry and a method for manufacturing an organic light emitting diode display using the same. The photoresist includes a copolymer that is made from two different monomers. When the copolymer is used as a photoresist, the photoresist has the characteristic that it becomes insoluble when exposed to an ultraviolet light having a wavelength of 365 nm. | 06-05-2014 |
20140154828 | METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - The present invention provides a method for producing a Group III nitride semiconductor light-emitting device wherein in the formation of a light-emitting layer by forming a well layer, a capping layer and a barrier layer, the well layer having superior flatness and crystallinity is formed while suppressing the occurrence of damage to the well layer. In formation of the light-emitting layer, pits are provided in the light-emitting layer so that a pit diameter D falls within a range of 120 nm to 250 nm. The light-emitting layer formation step comprises the steps of forming the barrier layer, forming the well layer, and forming the capping layer. The growth temperature of the barrier layer is higher by any temperature in a range of 65° C. to 135° C. than that of the well layer. | 06-05-2014 |
20140154829 | ORGANIC LIGHT EMITTING DISPLAY AND METHOD FOR FABRICATING THE SAME - An organic light emitting display device (OLED) includes a transparent substrate a first electrode formed on the transparent substrate a partition wall including first and second tapered structures having different tapers and formed on the first electrode, and an organic light emitting layer stacked on both sides of the first electrode below a level of the partition wall and a second electrode. The OLED device is manufactured by, for example, forming a first electrode on a transparent substrate, forming a partition wall having first and second tapered structures on the first electrode, and forming an organic light emitting layer and a second electrode, sequentially, on both sides of the first electrode below a level of the partition wall. | 06-05-2014 |
20140170793 | Light-Emitting Element, Light-Emitting Device, and Manufacturing Method of Light-Emitting Element - Provided is a highly reliable light-emitting element in which damage to an EL layer is reduced even when an auxiliary electrode for an upper electrode is provided. Further, a highly reliable light-emitting device in which luminance unevenness is suppressed is provided. The light-emitting element includes a first electrode; an insulating layer over the first electrode; an auxiliary electrode having a projection and a depression on a surface, over the insulating layer; a layer containing a light-emitting organic compound over the first electrode and the auxiliary electrode; and a second electrode over the layer containing the light-emitting organic compound. At least part of the auxiliary electrode is electrically connected to the second electrode. | 06-19-2014 |
20140179045 | TRANSPARENT CONDUCTIVE ELECTRODE STACK CONTAINING CARBON-CONTAINING MATERIAL - A transparent conductive electrode stack containing a work function adjusted carbon-containing material is provided. Specifically, the transparent conductive electrode stack includes a layer of a carbon-containing material and a layer of a work function modifying material. The presence of the work function modifying material in the transparent conductive electrode stack shifts the work function of the layer of carbon-containing material to a higher value for better hole injection into the OLED device as compared to a transparent conductive electrode that includes only a layer of carbon-containing material and no work function modifying material. | 06-26-2014 |
20140186983 | MASK, METHOD OF CLEANING THE MASK, AND METHOD OF MANUFACTURING A PLURALITY OF ORGANIC ELECTROLUMINESCENT ELEMENTS USING THE MASK - A method of cleaning a mask includes preparing a mask on which a first metal layer and a second metal layer are stacked sequentially, and lifting off the second metal layer by removing the first metal layer. | 07-03-2014 |
20140186984 | COMPLEX COMPOUNDS HAVING TETRADENTATE LIGANDS AND THE USE THEREOF IN THE OPTO-ELECTRONIC FIELD - The invention describes electronic devices comprising a metal complex compound having at least one tetradentate ligand having N and/or P donors, in particular a ligand having a PPPP, NNNN, PNNP or NPPN structure, and uses of a complex of this type in the electronic field and for the generation of light. | 07-03-2014 |
20140186985 | METHOD AND APPARATUS FOR MAUFACTURING ORGANIC EL DEVICE - Provided is a method and an apparatus for manufacturing an organic EL device which make it possible to manufacture organic EL devices capable of suppressing quality degradation. The method for manufacturing an organic EL device, in which constituent layers of an organic EL element are formed over a substrate in the form of a strip by deposition, while the substrate is being moved in the longitudinal direction, includes: a constituent layer-forming step of performing deposition over one surface of the substrate, while the substrate is being moved in the longitudinal direction, sequentially in an upward deposition unit and a lateral deposition unit provided along the moving direction of the substrate by discharging a vaporized material from an evaporation source. The constituent layer-forming step includes an upward deposition step, a laterally deposition step, and a direction changing step. | 07-03-2014 |
20140193936 | METHOD FOR FABRICATING ORGANIC LIGHT EMITTING DEVICE - A method of fabricating an organic light emitting device includes forming a first electrode layer on a substrate, surface-treating the first electrode layer with CF | 07-10-2014 |
20140193937 | METHOD AND COMPOUND - A method of forming a layer of an electronic device, for example an organic light-emitting device, the method comprising the step of depositing a precursor layer comprising a compound of formula (I) and reacting the compound of formula (I) in a ring-opening addition reaction: | 07-10-2014 |
20140206120 | LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME - The disclosed light emitting diode includes a substrate provided, at a surface thereof, with protrusions, a buffer layer formed over the entirety of the surface of the substrate, a first semiconductor layer formed over the buffer layer, an active layer formed on a portion of the first semiconductor layer, a second semiconductor layer formed over the active layer, a first electrode pad formed on another portion of the first semiconductor layer, except for the portion where the active layer is formed, and a second electrode pad formed on the second semiconductor layer. Each protrusion has a side surface inclined from the surface of the substrate at a first angle, and another side surface inclined from the surface of the substrate at a second angle different from the first angle. | 07-24-2014 |
20140213005 | DEFECT-CONTROLLING STRUCTURE FOR EPITAXIAL GROWTH, LIGHT EMITTING DEVICE CONTAINING DEFECT-CONTROLLING STRUCTURE, AND METHOD OF FORMING THE SAME - A method for reducing dislocations or other defects in a light emitting device, such as light emitting diode (LED), by in-situ introducing nanoparticles into at least one of a defect-controlling layer, an n-type layer, a p-type layer, and a quantum well of the light emitting device. A light emitting device is provided, and nanoparticles are dispensed in-situ in at least one of a defect-controlling layer, an n-type layer, a p-type layer, and a quantum well of the light emitting device. | 07-31-2014 |
20140220720 | OVJP FOR PRINTING GRADED/STEPPED ORGANIC LAYERS - An emissive layer deposited in graded manner using a plurality of nozzles is disclosed. A mixtures ejected from the plurality of nozzles may contain varying concentrations of host-to-dopant material. The nozzles, as disclosed, may be arranged in a sequential manner such that the order of the sequence is based on varying concentration of the host-to-dopant material. The nozzles may be configured to translate relative to an area of a substrate to allow sequential deposition. | 08-07-2014 |
20140220721 | WHITE LIGHT EMITTING ORGANIC ELECTROLUMINESCENT ELEMENT WITH MIXING REGION BETWEEN TWO LIGHT EMITTING LAYERS - Provided is a white light-emitting organic EL element wherein a flexible plastic substrate is used, but the resistance to negative effects caused by the flexibility is excellent; a removal of a light emitting layer interface caused by folding the element and a contact failure do not tend to occur; and the drive voltage can be reduced. The white light-emitting organic EL element is formed by providing at least two layers, i.e., a light emitting layer and a light emitting layer on the plastic substrate. The white light-emitting organic EL element is characterized in that the light emitting layer contains more than three kinds of luminescent dopants including a red luminescent dopant, a green luminescent dopant, and a blue luminescent dopant; the light emitting layer contains the blue luminescent dopant; the light emitting layer and the light emitting layer are adjacent to each other; the light emitting layer is formed on the side adjacent to the positive electrode, and the light emitting layer is formed on the side adjacent to the negative electrode; and a mixed area is provided between the light emitting layer and the light emitting layer. | 08-07-2014 |
20140220722 | METHOD AND APPARATUS FOR MANUFACTURING ORGANIC EL DEVICE - Provided are a method and an apparatus for manufacturing an organic EL device, which makes it possible to manufacture organic EL devices capable of suppressing quality degradation. The method for manufacturing an organic EL device, in which constituent layers of an organic EL element are formed by deposition over a substrate in the form of a strip, while the substrate is being moved in the longitudinal direction, includes a constituent layer-forming step of performing deposition over one surface of the substrate, while the substrate is being moved in the longitudinal direction, sequentially in first and second deposition units arranged along the moving direction of the substrate by discharging a vaporized material from an evaporation source. The constituent layer-forming step includes a plurality of upward deposition steps and a direction changing step. | 08-07-2014 |
20140235005 | METHOD OF PRODUCING P-TYPE NITRIDE SEMICONDUCTOR AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE THEREWITH - A method of producing a p-type nitride semiconductor includes growing a first nitride semiconductor layer doped with a first concentration of a p-type impurity. The first nitride semiconductor layer is annealed to activate the p-type impurity. A second nitride semiconductor layer doped with a second concentration of a p-type impurity is grown on the first nitride semiconductor layer. The second concentration is higher than the first concentration. | 08-21-2014 |
20140235006 | COPPER(I) COMPLEXES FOR OPTOELECTRONIC DEVICES - Copper(I) complexes for the emission of light with a structure according to formula A: | 08-21-2014 |
20140235007 | METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE AND CHEMICAL VAPOR DEPOSITION APPARATUS - A method of manufacturing a semiconductor light emitting device, includes sequentially growing a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a substrate to form a light emitting layer. The forming of the light emitting layer includes a first growth process, a second growth process and a transfer process. The first growth process uses a first susceptor having a mounting surface with a first curvature. The second growth process uses a second susceptor having a mounting surface with a second curvature different from the first curvature. The transfer process transfers the substrate from the first susceptor to the second susceptor between the first and second growth processes. | 08-21-2014 |
20140287546 | Light-Emitting Device and Method for Manufacturing Light-Emitting Device - Techniques are provided for manufacturing a light-emitting device having high internal quantum efficiency, consuming less power, having high luminance, and having high reliability. The techniques include forming a conductive light-transmitting oxide layer comprising a conductive light-transmitting oxide material and silicon oxide, forming a barrier layer in which density of the silicon oxide is higher than that in the conductive light-transmitting oxide layer over the conductive light-transmitting oxide layer, forming an anode having the conductive light-transmitting oxide layer and the barrier layer, heating the anode under a vacuum atmosphere, forming an electroluminescent layer over the heated anode, and forming a cathode over the electroluminescent layer. According to the techniques, the barrier layer is formed between the electroluminescent layer and the conductive light-transmitting oxide layer. | 09-25-2014 |
20140295600 | EVAPORATION SOURCE ASSEMBLY, FILM DEPOSITION DEVICE AND FILM DEPOSITION METHOD - An evaporation source assembly used for depositing film on a substrate is provided, the evaporation source assembly comprises: a body comprising a top element, a bottom element and side walls defining a hollow chamber together, the bottom element comprises a plurality of inlet openings communicating with the chamber; a plurality of nozzles located at the top element and communicate with the chamber; a plurality of evaporators for containing and evaporating the evaporating material, which are positioned below the body and correspond to inlet openings respectively; each evaporator has an opening through which the evaporators is connected with corresponding inlet openings; and a plurality of connecting pipes for connecting the opening of the evaporators with the inlet openings, the connecting pipes are tapered pipes with a broad top and a narrow bottom to improve the vapor pressure of the evaporating material in the body to reach pressure balance. | 10-02-2014 |
20140295601 | METHOD OF FORMING ORGANIC LIGHT EMITTING PATTERN AND APPARATUS FOR FORMING ORGANIC LIGHT EMITTING PATTERN OF ORGANIC ELECTRO-LUMINESCENCE DISPLAY USING SUBLIMATION TYPE THERMAL TRANSFER METHOD - A method of forming an organic light emitting pattern of an organic electro-luminescence display according to an exemplary embodiment of the present invention includes preparing a display substrate in which a region where a first organic light emitting material is to be formed is defined, preparing a temporal transfer substrate (TTS) that is a transfer subject on which the first organic light emitting material is to be transferred, forming the first organic light emitting material on the temporal transfer substrate, applying heat to a portion other than a first region of the temporal transfer substrate to remove the first organic light emitting material formed on the portion other than the first region, disposing the temporal transfer substrate and the display substrate to closely face each other, and applying heat to the temporal transfer substrate to transfer the organic light emitting material on the display substrate. | 10-02-2014 |
20140295602 | SEMICONDUCTOR LIGHT EMITTING DEVICE, NITRIDE SEMICONDUCTOR LAYER, AND METHOD FOR FORMING NITRIDE SEMICONDUCTOR LAYER - According to an embodiment, a semiconductor light emitting device includes a foundation layer, a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The foundation layer has an unevenness having recesses, side portions, and protrusions. A first major surface of the foundation layer has an overlay-region. The foundation layer has a plurality of dislocations including first dislocations whose one ends reaching the recess and second dislocations whose one ends reaching the protrusion. A proportion of a number of the second dislocations reaching the first major surface to a number of all of the second dislocations is smaller than a proportion of a number of the first dislocations reaching the first major surface to a number of all of the first dislocations. A number of the dislocations reaching the overlay-region of the first major surface is smaller than a number of all of the first dislocations. | 10-02-2014 |
20140295603 | METHOD FOR PRODUCING ORGANIC ELECTROLUMINESCENCE ELEMENT - A method is provided for producing an organic EL element having excellent electric properties in a relatively low cost. The method includes the steps of using a vapor deposition apparatus | 10-02-2014 |
20140308768 | LASER-INDUCED THERMAL IMAGING APPARATUS, METHOD OF LASER-INDUCED THERMAL IMAGING, AND MANUFACTURING METHOD OF ORGANIC LIGHT-EMITTING DISPLAY APPARATUS USING THE METHOD - A laser-induced thermal imaging apparatus includes a substrate support unit and a laser beam irradiation unit. The substrate support unit and the laser beam irradiation unit move relative to each other so that the substrate arranged on the substrate support unit is scanned in one direction by a laser beam irradiated from the laser beam irradiation unit. The laser beam irradiation unit includes a beam generation unit, a first mask arranged on a path of the linear laser beam generated in the beam generation unit, the first mask including a plurality of openings arranged along a length direction of the linear laser beam, and a shield unit movable to expose all of the plurality of openings of the first mask or to shield at least some of the plurality of the openings of the first mask. | 10-16-2014 |
20140308769 | METHOD OF IMPROVING SURFACE MORPHOLOGY OF (Ga,Al,In,B)N THIN FILMS AND DEVICES GROWN ON NONPOLAR OR SEMIPOLAR (Ga,Al,In,B)N SUBSTRATES - A method for improving the growth morphology of (Ga,Al,In,B)N thin films on nonpolar or semipolar (Ga,Al,In,B)N substrates, wherein a (Ga,Al,In,B)N thin film is grown directly on a nonpolar or semipolar (Ga,Al,In,B)N substrate or template and a portion of the carrier gas used during growth is comprised of an inert gas. Nonpolar or semipolar nitride LEDs and diode lasers may be grown on the smooth (Ga,Al,In,B)N thin films grown by the present invention. | 10-16-2014 |
20140315341 | METHOD OF FORMING ORGANIC LAYER AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DEVICE HAVING THE SAME - A method of forming an organic layer includes supplying a liquefied organic material, drying the liquefied organic material, supplying a solvent to an intermediate organic layer to swell the intermediate organic layer, and drying the swelled organic layer. The organic layer is formed to have a uniform thickness when the organic layer is formed by a solution-based printing method. | 10-23-2014 |
20140315342 | DEPOSITION APPARATUS, DEPOSITION METHOD, ORGANIC EL DISPLAY, AND LIGHTING DEVICE - A deposition method includes moving a substrate in a first direction within a processing chamber; generating a first source gas by evaporating a first film forming source material; discharging the first source gas from a first discharge opening toward the substrate being moved in the processing chamber; forming a first line-shaped thin film elongated in the first direction by depositing the first source gas on the substrate; generating a second source gas by evaporating a second film forming source material; discharging the second source gas from a second discharge opening offset from the first discharge opening in a second direction, which intersects the first direction, toward the substrate being moved in the processing chamber; and forming a second line-shaped thin film elongated in the first direction by depositing the second source gas on the substrate at a position spaced apart from the first line-shaped thin film. | 10-23-2014 |
20140315343 | APPARATUS FOR DEPOSITING ORGANIC FILM ON SUBSTRATE - A thin film deposition apparatus includes: a process chamber; and a substrate support comprising a substantially flat surface configured to support a substrate in the process chamber; and a deposition source configured to supply an organic material for deposition onto the substrate. The apparatus further includes a deposition mask assembly comprising first and second rollers disposed apart from each other in the process chamber; a thin film mask roll having a first end wound about the first roller and a second end wound about the second roller, wherein a deposition mask is defined on a first plane with a portion of the thin film mask roll extending between the first and second rollers; and a substrate transporting mechanism configured to transfer the substrate support on a second plane substantially parallel to the first plane within the process chamber. | 10-23-2014 |
20140315344 | DEPOSITION APPARATUS, ORGANIC LIGHT EMITTING DISPLAY APPARATUS, AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY APPARATUS USING THE DEPOSITION APPARATUS - A deposition apparatus includes a deposition unit including a plurality of deposition assemblies, which are separated from a substrate at a predetermined distance and deposit a material onto the substrate while a first transfer unit transfers the substrate. Each of the plurality of deposition assemblies includes a patterning slit sheet facing a deposition source nozzle unit, a positional information obtaining unit obtaining positional information regarding a position of the substrate transferred by the first transfer unit, and a sheet stage adjusting a position of the patterning slit sheet with respect to the substrate transferred by the first transfer unit according to the positional information. | 10-23-2014 |
20140322850 | METHOD FOR FORMING AN ORGANIC DEVICE - The present invention provides a method for forming an organic device having a patterned conductive layer that includes providing a substrate, depositing organic materials over the substrate to form one or more organic layers, coating a photoresist solution over the one or more organic layers to form a photo-patternable layer, wherein the solution includes a fluorinated photoresist material and a first fluorinated solvent, selectively exposing portions of the photo-patternable layer to radiation to form a first pattern of exposed fluorinated photoresist material and a second pattern of unexposed fluorinated photoresist material, exposing the substrate to a second fluorinated solvent to develop the photo-patternable layer, removing the second pattern of unexposed fluorinated photoresist material without removing the first pattern of exposed fluorinated photoresist material, coating one or more conductive layers over the one or more organic layers and removing a portion of the one or more of the conductive layers to form a pattern. Particular embodiments of the present invention for forming arrays of top contact TFTs and a pixilated organic device are also provided. | 10-30-2014 |
20140322851 | TABLET FOR PLASMA COATING SYSTEM, METHOD OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING A THIN FILM USING THE METHOD OF MANUFACTURING THE TABLET - A tablet for a plasma coating system having a first part that includes a first material having a first sublimation point at a first pressure and a second part that is disposed on the first part and comprises a second material having a second melting point at the first pressure, wherein the second melting point is lower than the first sublimation point. | 10-30-2014 |
20140322852 | DEPOSITION APPARATUS AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DIODE DISPLAY - A deposition apparatus includes a deposition chamber, a plurality of substrate holders comprising a first holder configured to maintain a substrate at a first substrate position in the deposition chamber and a second holder configured to maintain another substrate at a second substrate position in the deposition chamber, a deposition source disposed in the deposition chamber and configured to supply a deposition material to apply onto substrates placed at the first and second substrate positions, and a deposition source transfer mechanism configured to move the deposition source to be opposite to one of the first and second substrates in a first direction, a substrate transfer mechanism configured to transfer a substrate in a second direction to or from the first substrate position and further configured to transfer another substrate in the second direction to or from the second substrate position. | 10-30-2014 |
20140322853 | Novel Zwitterionic Polyelectrolytes as Efficient Interface Materials for Application in Optoelectronic Devices - Facile ways towards the development of linear and brush-type zwitterionic conjugated polyelectrolytes possessing hole or electron blocking abilities are presented using combination of polymerization techniques, such as Suzuki or Stille cross coupling, Grignard Metathesis Polymerization and Atom transfer radical polymerization. These zwitterionic conjugated polyelectrolytes will serve as excellent interface materials in various optoelectronic devices. | 10-30-2014 |
20140335638 | Compounds for Use in Opto-Electrical Devices - A composition for use in fabricating opto-electrical devices comprising a solution processable triazine host material and a phosphorescent moiety. | 11-13-2014 |
20140335639 | METHOD FOR PRODUCING ORGANIC EL DISPLAY PANEL - A manufacturing method of an organic EL display panel includes: preparing G, R, and B inks that each include a solvent and respectively include G, R, and B organic light-emitting materials differing from each other in terms of light-emitting wavelength; applying the G ink to G subpixel regions on a substrate; applying the R ink to R subpixel regions; and applying the B ink to B subpixel regions. The R and B subpixel regions are each adjacent to a corresponding one of the G subpixel regions on both sides thereof. The G ink has a lower viscosity than the R and B inks. After application of the G ink is started, application of the R and B inks is started. | 11-13-2014 |
20140342484 | METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP AND CORRESPONDING OPTOELECTRONIC SEMICONDUCTOR CHIP - A method of producing a semiconductor chip includes providing a silicon growth substrate, producing a III nitride buffer layer on the growth substrate by sputtering, and growing a III nitride semiconductor layer sequence having an active layer above the buffer layer. | 11-20-2014 |
20140349430 | DEPOSITION APPARATUS, METHOD THEREOF AND METHOD FOR FORMING QUANTUM-DOT LAYER USING THE SAME - A deposition apparatus includes a first nozzle configured to spray a first deposition material toward a substrate and a second nozzle configured to spray a second deposition material, a first deposition source configured to supply the first deposition material to the first nozzle and a second deposition source configured to supply the second deposition material to the second nozzle. The deposition apparatus further includes a barrier member disposed between the first nozzle and the second nozzle and is configured to block the first deposition material evaporated through the first nozzle from being mixed with the second deposition material evaporated through the second nozzle and a vacuum chamber configured to surround the first and second nozzles, the first and second deposition sources and the barrier member. | 11-27-2014 |
20140349431 | PROCESS AND MATERIALS FOR MAKING CONTAINED LAYERS AND DEVICES MADE WITH SAME - There is provided a process for forming a contained second layer over a first layer, including the steps:
| 11-27-2014 |
20140349432 | METHOD FOR MANUFACTURING ORGANIC ELECTROLUMINESCENT ELEMENT - Forming an upper electrode included in an organic electroluminescent element includes: forming a first film made of a material for the upper electrode on an organic functional layer by magnetron sputtering under a first condition; and forming a second film made of the material for the upper electrode on the first film by magnetron sputtering under a second condition different from the first condition, the second film having a lower film stress than the first film. | 11-27-2014 |
20140349433 | DEVICE AND METHOD FOR DEPOSITING ORGANIC MATERIAL - A device for depositing an organic material includes a substrate; a mask having an opening portion and a shield portion; a fixing member for fixing the substrate and the mask to each other; a deposition source comprising a plurality of nozzles arranged in a first direction and configured to spray the organic material; and a plurality of shield plates near the plurality of nozzles on the deposition source. An angle θ between the substrate and a line extended from a distal end of one of the nozzles to a center of a distal end of a corresponding one of the shield plates is greater than or equal to a taper angle Φ of the shield portion of the mask. | 11-27-2014 |
20140357005 | Light-Emitting Device and a Method of Manufacturing Light-Emitting Device - To provide a highly reliable light-emitting device and especially a light-emitting device which can be formed without use of a metal mask and includes a plurality of light-emitting elements. A structural body at least an end of which has an acute-angled shape is provided so that the end can pass downward through an electrically conductive film formed over the insulating layer and can be at least in contact with an insulating layer having elasticity, thereby physically separating the electrically conductive film, and the electrically conductive films are thus electrically insulated from each other. Such a structure may be provided between adjacent light-emitting elements so that the light-emitting elements can be electrically insulated from each other in the light-emitting device. | 12-04-2014 |
20140363915 | NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION AND APPLICATION THEREOF - A negative photosensitive resin composition including a novolac resin (A), a photoacid generator (B), a basic compound (C), a cross-linking agent (D), and a solvent (E) is provided. The novolac resin (A) includes a hydroxy-type novolac resin (A-1) and a xylenol-type novolac resin (A-2). The hydroxy-type novolac resin (A-1) is synthesized by polycondensing a hydroxybenzaldehyde compound and an aromatic hydroxy compound. The xylenol-type novolac resin (A-2) is synthesized by polycondensing an aldehyde compound and a xylenol compound. | 12-11-2014 |
20140370633 | ORGANIC LAYER DEPOSITION APPARATUS AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY DEVICE BY USING THE ORGANIC LAYER DEPOSITION APPARATUS - An organic layer deposition apparatus includes: a conveyer unit including a transfer unit, a first conveyer unit, and a second conveyer unit; a loading unit for fixing a substrate to the transfer unit; a deposition unit including a chamber and at least one organic layer deposition assembly; and a measuring unit located between the loading unit and the deposition unit to measure position information of the substrate before an organic layer is deposited onto the substrate; and an unloading unit for separating, from the transfer unit, the substrate onto which the deposition has been completed, wherein the transfer unit is configured to cyclically move between the first conveyer unit and the second conveyer unit, and wherein the substrate fixed to the transfer unit is configured to be spaced apart from the at least one organic layer deposition assembly while being transferred by the first conveyer unit. | 12-18-2014 |
20140370634 | METHOD FOR FABRICATING NITRIDE SEMICONDUCTOR THIN FILM AND METHOD FOR FABRICATING NITRIDE SEMICONDUCTOR DEVICE USING THE SAME - A method for fabricating a nitride semiconductor thin film includes preparing a first nitride single crystal layer doped with an n-type impurity. A plurality of etch pits are formed in a surface of the first nitride single crystal layer by applying an etching gas thereto. A second nitride single crystal layer is grown on the first nitride single crystal layer having the etch pits formed therein. | 12-18-2014 |
20140370635 | METHOD OF MANUFACTURING AN ORGANIC LIGHT EMITTING STRUCTURE AND METHOD OF MANUFACTURING AN ORGANIC LIGHT EMITTING DISPLAY DEVICE - A method of manufacturing an organic light emitting structure is provided as follows. A first electrode is formed on a lower substrate. A pixel defining layer is formed adjacent to the first electrode on the lower substrate. A preliminary charge transport layer is formed on the first electrode and the pixel defining layer. An organic light emitting layer is formed on the preliminary charge transport layer. The preliminary charge transport layer is selectively etched to form a charge transport layer. A second electrode is formed on the organic light emitting layer. | 12-18-2014 |
20150017753 | THIN FILM DEPOSITION APPARATUS AND MANUFACTURING METHOD OF ORGANIC LIGHT EMITTING DIODE DISPLAY USING THE SAME - The example embodiments provide a thin film deposition apparatus for deposition of an organic material having a low volatility characteristic, and a method for manufacturing an OLED display using the same. A thin film deposition apparatus includes a crucible assembly evaporating an organic material toward a substrate, and a pattern mask provided in one side of the substrate facing the crucible assembly. The crucible assembly includes a crucible coupled with the heater and containing an organic material therein, and a guide pipe coupled to an entrance of the crucible and forming an inner space extended in one direction toward the substrate from the entrance of the crucible. | 01-15-2015 |
20150024532 | ELECTRICALLY CONDUCTIVE POLYMERS - An electrically conductive film suited to use as a transparent anode, a method of forming the film, and an electronic device comprising the film are disclosed. The device includes a conductive polymer electrode defining first and second surfaces and having an electrical conductivity gradient between the first and second surfaces. A second electrode is spaced from the second surface by at least one organic material layer, such as a light emitting layer. | 01-22-2015 |
20150031156 | DONOR SUBSTRATE FOR TRANSFER AND MANUFACTURING METHOD OF ORGANIC LIGHT EMITTING DIODE DISPLAY - A donor substrate for transfer is disclosed. In some embodiments, the donor substrate for transfer includes a base layer, a light-heat conversion layer on the base layer, an intermediate layer on the light-heat conversion layer, and a transfer layer on the intermediate layer, in which the intermediate layer includes a transfer part and a non-transfer part, and in the transfer part and the non-transfer part, surface roughness of the intermediate layer is in a range of 30 nanometers or more and 1 micrometer or less. Methods of manufacturing an organic light emitting diode display are also disclosed. | 01-29-2015 |
20150031157 | METHOD AND SYSTEM FOR CONTINUOUS ATOMIC LAYER DEPOSITION - A system and method for continuous atomic layer deposition. The system and method includes a housing, a moving bed which passes through the housing, a plurality of precursor gases and associated input ports and the amount of precursor gases, position of the input ports, and relative velocity of the moving bed and carrier gases enabling exhaustion of the precursor gases at available reaction sites. | 01-29-2015 |
20150037920 | CHEMICAL VAPOR DEPOSITION APPARATUS AND METHOD OF FORMING SEMICONDUCTOR EPITAXIAL THIN FILM USING THE SAME - A chemical vapor deposition apparatus includes: a reaction chamber including an inner tube having a predetermined volume of an inner space, and an outer tube tightly sealing the inner tube; a wafer holder disposed within the inner tube and on which a plurality of wafers are stacked at predetermined intervals; and a gas supply unit including at least one gas line supplying an external reaction gas to the reaction chamber, and a plurality of spray nozzles communicating with the gas line to spray the reaction gas to the wafers, whereby semiconductor epitaxial thin films are grown on the surfaces of the wafers, wherein the semiconductor epitaxial thin film grown on the surface of the wafer includes a light emitting structure in which a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer are sequentially formed. | 02-05-2015 |
20150044802 | Ester-Based Solvent Systems for Printable Organic Light-Emitting Diode Ink Formulations - Ink compositions for forming active layers in an organic light-emitting diode are provided. Also provided are methods of forming active layers of an OLED using the ink compositions. The ink compositions comprise a solvent system in which a substantial majority of the solvent is comprised of one or more ester compounds. | 02-12-2015 |
20150044803 | DEPOSITION APPARATUS, METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY APPARATUS USING THE SAME, AND ORGANIC LIGHT EMITTING DISPLAY APPARATUS MANUFACTURED BY USING THE METHOD - A deposition apparatus includes a substrate combining unit configured to dispose a substrate on a moving unit including a surface, a first blocking member combining unit configured to raise a first blocking member, a first deposition unit including one or more deposition assemblies configured to deposit a material on the substrate, a first blocking member separation unit configured to separate the first blocking member downward from the moving unit, and a first conveyer unit configured to convey the moving unit in a first direction, where the one or more deposition assemblies are spaced apart from the substrate by a predetermined distance so that the material is deposited on the substrate in the first deposition unit while the moving unit is conveyed in the first direction. | 02-12-2015 |
20150044804 | CATHODE BUFFER MATERIALS AND RELATED DEVICES AND METHODS - The present invention generally relates to cathode buffer materials and devices and methods comprising the cathode buffer materials. | 02-12-2015 |
20150044805 | ORGANIC ELECTRONIC DEVICE MANUFACTURING METHOD AND ORGANIC EL DEVICE MANUFACTURING METHOD - A manufacturing method including: forming a first electrode; forming a first bank; forming a first organic functional film; forming a second bank; forming a second organic functional film; and forming a second electrode. In the forming of the second bank, the second bank is formed such that, in plan view, a bottom edge of a sidewall surface of the second bank facing the second aperture is located at the same position as or is set back from a bottom edge of a sidewall surface of the first bank facing the first aperture. In the forming of the second organic functional film, the droplet of the second ink is applied such that an upper edge of the second organic functional film within the second aperture is located at a same level as or at a higher level than the bottom edge of the sidewall surface of the second bank. | 02-12-2015 |
20150064828 | METHOD OF MANUFACTURING INK FOR FORMING FUNCTIONAL LAYER AND METHOD OF MANUFACTURING ORGANIC EL ELEMENT - A method of manufacturing an ink for forming a functional layer includes: dispersing a mixture in which a low molecular material and a high molecular material are mixed in a poor solvent; and dissolving the mixture by adding a good solvent to the poor solvent in which the mixture is dispersed, in which a volume ratio of the poor solvent is from 10% to 70% with respect to the total volume in which the good solvent is added to the poor solvent and the poor solvent and the good solvent can be mixed. | 03-05-2015 |
20150072458 | INKJET DEVICE AND MANUFACTURING METHOD FOR ORGANIC EL DEVICE - An ink jet device includes: an ink jet head including a nozzle through which ink droplet is ejected by applying voltage to piezoelectric element; and an ejection control unit controlling ink droplet ejection amount by varying voltage, voltage waveform of the voltage includes: preliminary vibration wave form part for preliminary drive operation of pushing ink toward outer edge of the nozzle to the extent that the droplet is not ejected; and main vibration waveform part for main drive operation of ejecting the droplet through the nozzle after the preliminary drive operation, the ejection control unit performs the preliminary and main drive operations according to the preliminary vibration waveform part and the main vibration waveform part, respectively, and proportion of displacement amount X of the voltage for the preliminary drive operation to displacement amount Y of the voltage for the main drive operation is set to 20%≦X/Y≦40%. | 03-12-2015 |
20150072459 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a stacked structure body and an electrode. The stacked structure body has a first conductivity type first semiconductor layer including a nitride-based semiconductor, a second conductivity type second semiconductor layer including a nitride-based semiconductor, and a light emitting layer provided between the first and second semiconductor layers. The electrode has first, second and third metal layers. The first metal layer is provided on the second semiconductor layer and includes silver or silver alloy. The second metal layer is provided on the first metal layer and includes at least one element of platinum, palladium, rhodium, iridium, ruthenium, osmium. The third metal layer is provided on the second metal layer. A thickness of the third metal layer along a direction from the first toward the second semiconductor layer is equal to or greater than a thickness of the second metal layer. | 03-12-2015 |
20150079714 | COMPOSITION FOR USE IN ORGANIC DEVICE, POLYMER FILM, AND ORGANIC ELECTROLUMINESCENT ELEMENT - A composition for use in an organic device, useful in producing an organic device, such as an organic electroluminescent element, having high operation stability, is a composition for use in an organic device that contains at least two cross-linking compounds, at least two of the cross-linking compounds having different numbers of cross-linking groups. A polymer film produced by forming a film of the composition for use in an organic device and then polymerizing the cross-linking compounds. An organic electroluminescent element that includes an anode and a cathode on a substrate and at least one organic layer disposed between the anode and the cathode, wherein at least one of the at least one organic layer is a layer that is produced by forming a film of the composition for use in an organic device and then polymerizing the cross-linking compounds. | 03-19-2015 |
20150079715 | Polythiophene-Containing Ink Compositions for Inkjet Printing - Ink compositions comprising polythiophenes and aprotic organic solvents that are formulated for inkjet printing the hole injecting layer (HIL) of an organic light emitting diode (OLED) are provided. Also provided are methods of inkjet printing the HILs using the ink compositions. | 03-19-2015 |
20150079716 | LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - A light emitting diode includes a substrate, a first-type semiconductor layer, a nanorod layer and a transparent planar layer. The first-type semiconductor layer is disposed over the substrate. The nanorod layer is formed on the first-type semiconductor layer. The nanorod layer includes a plurality of nanorods and each of the nanorods has a quantum well structure and a second-type semiconductor layer. The quantum well structure is in contact with the first-type semiconductor layer, and the second-type semiconductor layer is formed on the quantum well structure. The transparent planar layer is filled between the nanorods. A surface of the second-type semiconductor layer is exposed out of the transparent planar layer. | 03-19-2015 |
20150087097 | METHOD FOR MANUFACTURING A LIGHT-EMITTING DIODE - The present disclosure provides a method for manufacturing a light-emitting diode, including: providing a substrate; forming a first semiconductor layer over the substrate; forming an active layer over the first semiconductor layer; forming a second semiconductor layer over the active layer; removing a portion of the second semiconductor layer and a portion of the active layer to expose a portion of the first semiconductor layer; conform to depositing a transparent conductive layer; forming a patterned mask layer over the transparent conductive layer; performing a wet etch process to remove a portion of the transparent conductive layer; performing a dry etch process to completely remove the portion of the transparent conductive layer not covered by the patterned mask layer; removing the patterned mask layer; and forming a first electrode and a second electrode. | 03-26-2015 |
20150087098 | METHOD FOR MANUFACTURING ORGANIC THIN-FILM ELEMENT, APPARATUS FOR MANUFACTURING ORGANIC THIN-FILM ELEMENT, METHOD FOR FORMING ORGANIC FILM, AND METHOD FOR MANUFACTURING ORGANIC EL ELEMENT - A method for reducing an internal pressure of a vacuum chamber while preventing impurity contamination within the vacuum chamber as much as possible. The method includes: rough pumping reducing an internal pressure of a vacuum chamber ( | 03-26-2015 |
20150093847 | METHOD FOR FABRICATING NANO-PATTERNED SUBSTRATE FOR HIGH-EFFICIENCY NITRIDE-BASED LIGHT-EMITTING DIODE - Provided is a method of manufacturing a substrate for a light emitting diode including a convex section forming step and a crystallization/crystallizing step. According to the method and the substrate for the light emitting diode, light extraction is significantly improved and nano to micron sized pattern, economically formed. | 04-02-2015 |
20150118778 | INKJET APPARATUS AND METHOD FOR MANUFACTURING ORGANIC EL DEVICE - An inkjet device includes an inkjet head having a pressure applier applying voltage to ink contained in a ink reservoir, by executing a standby drive operation of applying a standby oscillation to the ink and a main drive operation of applying a main oscillation to cause the ink to be discharged from nozzles, such that the start of main drive operation execution is within a period where the displacement in the standby oscillation is oriented toward the interior of the nozzles in order to produce interference between the standby oscillation. | 04-30-2015 |
20150132878 | METHOD FOR MANUFACTURING ORGANIC EL ELEMENT, ORGANIC EL ELEMENT, ORGANIC EL DISPLAY PANEL, ORGANIC EL DISPLAY APPARATUS, AND ORGANIC EL LIGHT-EMITTING APPARATUS - Method for manufacturing organic EL element, including: reducing internal pressure of vacuum chamber by vacuum pump connected thereto in state where substrate with applied film formed thereon is placed in vacuum chamber, applied film having been formed by applying material of organic light-emitting layer to substrate; and purifying applied film having passed through reducing the internal pressure of the vacuum chamber. Diphenylamine is used in portion of vacuum pump that is connected to inside of vacuum chamber. Reducing internal pressure of vacuum chamber is performed such that molecules of diphenylamine fly from vacuum pump into vacuum chamber and some of molecules are taken into applied film, and purifying is performed so that content of diphenylamine in applied film is in range from more than 0 nmol/cm | 05-14-2015 |
20150132879 | INKJET DEVICE, AND METHOD FOR MANUFACTURING ORGANIC EL DEVICE - An ink jet device includes a plurality of ink jet heads each including an ink housing unit that houses therein ink, a pressure application unit that ejects a droplet of the ink by applying pressure to the ink, and a nozzle through which the droplet of the ink is ejected, wherein with respect to at least one of the plurality of ink jet heads, a preliminary drive operation and a main drive operation are performed, the preliminary drive operation is an operation of pushing the ink toward an outer edge of the nozzle to the extent that the droplet of the ink is not ejected through the nozzle, and the main drive operation is an operation of ejecting the droplet of the ink through the nozzle after performance of the preliminary drive operation. | 05-14-2015 |
20150140714 | METHOD FOR PREVENTING SHORT CIRCUIT BETWEEN METAL WIRES IN ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE - Disclosed is a method for preventing a short circuit between metal wires in an organic light emitting diode display device. The method includes: forming an inorganic layer on a substrate; forming a metal layer including two metal wires on the inorganic layer; forming an organic layer on the two metal wires; forming an indium tin oxide layer on the organic layer; coating a photoresist layer; performing an exposure step by utilizing a photo mask having a transparent area, an opaque material disposed in the transparent area, wherein a width of the opaque material is less than a width of the transparent area; performing a development step to the photoresist layer; and performing an etching step to remove a part of the indium tin oxide layer and a part of the organic layer. The present invention can prevent the short circuit between the metal wires. | 05-21-2015 |
20150140715 | INK FOR FORMING FUNCTIONAL LAYER, METHOD OF MANUFACTURING INK FOR FORMING FUNCTIONAL LAYER, AND METHOD OF MANUFACTURING ORGANIC ELECTRO-LUMINESCENCE ELEMENT - An ink for forming a functional layer, which is used when any thin film layer among functional layers consisting of a plurality of thin film layers is formed, includes a functional layer forming material and a solvent for dissolving the functional layer forming material, and in which the number of particles of 0.5 μm or more is 7 or less in 10 ml of the ink for forming a functional layer. | 05-21-2015 |
20150147839 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device may include: forming a metal layer structure over a semiconductor workpiece; forming a first layer over the metal layer structure, the first layer including a first material; forming at least one opening in the first layer and the metal layer structure; depositing a second layer to fill the at least one opening and at least partially cover a surface of the first layer facing away from the metal layer structure, the second layer including a second material that is different from the first material; removing the second layer from at least the surface of the first layer facing away from the metal layer structure; and removing the first layer. | 05-28-2015 |
20150147840 | Synthesis Method of Organometallic Complex, Synthesis Method of Pyrazine Derivative, 5,6-Diaryl-2-Pyrazyl Triflate, Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device - Provided is a 5,6-diaryl-2-pyrazyl triflate, its synthetic method, and a method for synthesizing an organometallic complex having a triarylpyrazine ligand from the 5,6-diaryl-2-pyrazyl triflate. The triflate is readily obtained from the corresponding 5,6-diarylpyrazin-2-ol, and the palladium-catalyzed coupling of the 5,6-diaryl-2-pyrazyl triflate with an arylboronic acid derivative leads to a high yield of a triarylpyrazine derivative having high purity. The use of the triarylpyrazine derivative in the reaction with a metal compound such as a metal chloride results in an ortho-metallated organometallic complex with high purity. The high purity of the organometallic complex contributes to the extremely high durability of a light-emitting element. | 05-28-2015 |
20150294872 | METHOD FOR CREATING ELECTRICAL CONTACTS AND CONTACTS CREATED IN THIS WAY - The present invention relates to a method for creating electrical contacts in optoelectronic and electronic devices, including high and low concentration solar cells, thin films, organic light emitting diodes (OLED) and in general any device requiring the extraction or injection of a current by means of electrical contacts. The method comprises the following stages: (a) depositing the contact material on the final substrate through the laser induced forward transfer (LIFT) of said material from a donor substrate to the final substrate, preferably using a pulsed laser and (b) sintering the contact material using a laser source, preferably a continuous laser. The contacts thus created present excellent conductivity and adherence properties, as well as high height (thickness) to width ratios. | 10-15-2015 |
20150311062 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD OF MAINTAINING DEPOSITION APPARATUS - A method of manufacturing a semiconductor device, includes forming an aluminum compound film on a surface of a process chamber by supplying an aluminum (Al) source to the process chamber, the surface contacting the aluminum source in the process chamber; disposing a wafer on a susceptor provided in the process chamber after forming the aluminum compound film; and forming a thin film for the semiconductor device on the wafer. | 10-29-2015 |
20150311380 | METHOD OF GROWING NITRIDE SINGLE CRYSTAL AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE - A method of growing a Group-III nitride crystal includes forming a buffer layer on a silicon substrate and growing a Group-III nitride crystal on the buffer layer. The method of growing of a Group-III nitride crystal is executed through metal-organic chemical vapor deposition (MOCVD) during which a Group-III metal source and a nitrogen source gas are provided. The nitrogen source gas includes hydrogen (H | 10-29-2015 |
20150318438 | PREPARATION METHOD FOR HIGH-VOLTAGE LED DEVICE INTEGRATED WITH PATTERN ARRAY - The invention disclosed a preparation method for a high-voltage LED device integrated with a pattern array, comprising the following process steps: providing a substrate, and forming a N-type GaN limiting layer, an epitaxial light-emitting layer and a P-type GaN limiting layer on the substrate in sequence; isolating the N—GaN limiting layer, the epitaxial light-emitting layer and the P—GaN limiting layer on the substrate into at least two or more independent pattern units by means of photo lithography and etching process, wherein each of the pattern unit is in a triangular shape, and very two adjacent pattern units are arranged in an opposing and crossed manner to form a quadrangle, and the quadrangles formed by a plurality of adjacent pattern units are distributed in array; and connecting each pattern unit with metal wires to form a series connection and/or a parallel connection, thereby forming a plurality of interconnected LED chips. For the purpose of improving the current distribution so as to increase the luminescent efficiency of the device, a current blocking layer is also arranged beneath the P-type metal contact of each unit in addition, an insulation material is also arranged to cover the surface of the chip so as to achieve the purposes of protecting the chip and increasing the light extraction efficiency of the chip. | 11-05-2015 |
20150318500 | Synthesis of Four Coordinated Platinum Complexes and Their Applications in Light Emitting Devices Thereof - Platinum complexes that exhibit photoabsorption and photoemission, methods of making such complexes, and applications thereof are disclosed, including optical devices comprising the complexes. | 11-05-2015 |
20150337148 | PRINTABLE COMPOSITIONS USEFUL IN ELECTRONIC APPLICATIONS AND METHODS RELATING THERETO - A printable ink for electronic applications is disclosed. The ink contains at least one non-interactive solvent, a binder, optionally one or more particulate fillers that may be conductive, semi-conductive or non-conductive, optionally a co-solvent and optionally other additives. | 11-26-2015 |
20150364716 | ORGANIC LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE DEVICE - Provided is an organic light emitting device, including: a substrate; and a lower electrode, an organic compound layer including an emission layer, and an upper electrode sequentially provided on the substrate, in which: the organic compound layer covers the lower electrode; the upper electrode covers the organic compound layer; the upper electrode is electrically connected to a wiring connecting portion provided in the substrate; and when an angle formed between a tilt of a section of an end in at least a partial region of the organic compound layer and a surface of the substrate is represented by θ | 12-17-2015 |
20150376337 | NOVEL METALLOPOLYMERS AND USE THEREOF - Metallopolymers of formula (I) where R | 12-31-2015 |
20160005975 | CHARGE-TRANSPORTING VARNISH - A charge-transporting varnish including charge-transporting material comprising N,N′-diaryl benzidine derivatives represented by formula (1), a charge-accepting dopant comprising heteropoly acid, and an organic solvent. | 01-07-2016 |
20160013359 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME | 01-14-2016 |
20160024322 | Organic Thin Film Ink Compositions and Methods - The present teachings relate to various embodiments of an ink composition, which once printed and cured forms an organic thin film on a substrate such as, but not limited by, an OLED device substrate. Various embodiments of the ink can be printed using an industrial inkjet printing system that can be housed in a gas enclosure, which gas enclosure defines an interior that has a controlled environment maintained as an inert and substantially low-particle process environment. Patterned printing of an organic thin film on a substrate, for example, but not limited by, an OLED device substrate, in such a controlled environment can ensure a high-volume, high yield process for a variety of OLED devices. | 01-28-2016 |
20160027856 | THIN FILM TRANSISTOR SUBSTRATE, DISPLAY DEVICE HAVING THE SAME AND METHOD OF MANUFACTURING THE SAME - A thin film transistor substrate includes a semiconductor pattern on a base substrate, a first insulation member disposed on the semiconductor pattern, a second insulation pattern disposed on the first insulation member, and a gate electrode disposed on the first insulation member and the second insulation pattern. The second insulation pattern overlaps a first end portion of the semiconductor pattern, and exposes a second end portion of the semiconductor pattern opposite to the first end portion. The gate electrode overlaps both the first insulation member and the second insulation pattern. | 01-28-2016 |
20160035567 | SEMICONDUCTOR DEVICE - A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured. | 02-04-2016 |
20160035937 | OXYGEN CONTROLLED PVD ALN BUFFER FOR GAN-BASED OPTOELECTRONIC AND ELECTRONIC DEVICES - Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer. | 02-04-2016 |
20160036008 | METHOD OF MANUFACTURING FILM FORMATION SUBSTRATE, AND METHOD OF MANUFACTURING ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE - A vapor deposition device ( | 02-04-2016 |
20160049586 | METHOD FOR PRODUCING VAPOR DEPOSITION MASK, AND METHOD FOR PRODUCING ORGANIC SEMICONDUCTOR ELEMENT - A method for producing a vapor deposition mask capable of satisfying both enhancement in definition and reduction in weight even when a size is increased, and a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition are provided. A vapor deposition mask is produced by the steps of preparing a metal plate with a resin layer in which a resin layer is provided on one surface of a metal plate, forming a metal mask with a resin layer by forming a slit that penetrates through only the metal plate, for the metal plate in the metal plate with a resin layer, and thereafter, forming a resin mask by forming openings corresponding to a pattern to be produced by vapor deposition in a plurality of rows lengthwise and crosswise in the resin layer by emitting a laser from the metal mask side. | 02-18-2016 |
20160079538 | METHOD FOR PRODUCING ORGANIC ELECTROLUMINESCENT ELEMENT HAVING LIGHT-EMITTING PATTERN - The problem addressed by the present invention is to enable the providing of a method for producing an organic electroluminescent element having a light-emitting pattern having superior gradation characteristics. The method for producing an organic electroluminescent element having a light-emitting pattern formed by means of light irradiation of an organic electroluminescent element provided with one or more organic functional layers between at least a pair of electrodes is characterized in that an image to pattern comprises a highlight section, a shadow section, and a linear section prepared ahead of time, the amount of light irradiation is altered on the basis of a tone reproduction curve having a soft gradation section that is at the highlight section and shadow section and that has a lower gradient inclination than that of the linear section, and thus a light-emitting pattern is formed having a gradient resulting from a light emission brightness corresponding to the amount of light irradiation. | 03-17-2016 |
20160087210 | ORGANIC LIGHT EMITTING DEVICE WITH INCREASED LIGHT OUT COUPLING - The invention relates to an organic light-emitting device (OLED) comprising at least: a first electrode; a second electrode; an organic light emissive layer arranged between said first electrode and said second electrode; and an organic charge transport layer arranged between said first electrode and said emissive layer, wherein i) the charge transport layer is patterned or provided with a periodic surface structure on a surface of the charge transport layer facing the emissive layer, and/or ii) an alignment layer which allows for charge transport to the emissive layer is provided between said charge transport layer and said emissive layer, which alignment layer promotes alignment of the optical dipoles of molecules of said light emissive layer towards a common preferred direction of the molecular axes. The use of the patterned or structured charge transport layer and/or the alignment layer provides improved light out coupling from the OLED layer stack, i.e. increased external quantum efficiency. | 03-24-2016 |
20160090499 | PRINTING INK COMPOSITION COMPRISING A METAL COMPLEX WITH ADJUSTED VISCOSITY - A printing ink composition includes a metal salt of a metal ion and a counter ion, and a viscosity adjusting agent. The metal ion is present as a metal complex of the metal ion and the viscosity adjusting agent, the viscosity adjusting agent includes at least one functional ligand, where the functional ligand may be a monofunctional ligand having one functional group and multifunctional ligands having more than one functional groups. | 03-31-2016 |
20160093836 | METHOD FOR PRODUCING ORGANIC ELECTROLUMINESCENT ELEMENT - A method for producing an organic electroluminescent element including a transparent substrate, a transparent electrode, an organic functional layer unit, and an electrode counter to the transparent electrode disposed in sequence, the method including: forming a preform of an element satisfying the following expression: ΔExy≧0.05, wherein 0° is an angle orthogonal to the transparent substrate and ΔExy represents a chromaticity difference of a reflected color measured at a tilted angle within a range of 0 to 80° with respect to the transparent substrate; and irradiating a specific region of the preform of the element with light. | 03-31-2016 |
20160096185 | THIN FILM FABRICATING APPARATUS AND MANUFACTURING METHOD OF ORGANIC LIGHT EMITTING DEVICE USING THE SAME - A thin film fabricating apparatus includes: an electrode bath which contains a thin film-forming material; a plurality of needle electrodes disposed in the electrode bath; a plurality of ring electrodes disposed on the electrode bath at positions corresponding to the needle electrodes; and a substrate stand disposed opposite to the needle electrodes and the ring electrodes, where the substrate stand holds the substrate, on which a thin film is to be formed. | 04-07-2016 |
20160133841 | METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DIODE DISPLAY - A manufacturing method of an organic light emitting diode display is disclosed. In one aspect, the method includes forming a thin film transistor and a first electrode over a substrate and forming a first organic emission layer over the first electrode. The method further includes forming a second organic emission layer over the first organic emission layer, applying heat to the first and second organic emission layers and forming a second electrode over the second organic emission layer. | 05-12-2016 |
20160141448 | MONOLITHIC NANO-CAVITY LIGHT SOURCE ON LATTICE MISMATCHED SEMICONDUCTOR SUBSTRATE - An optoelectronic light emission device is provided that includes a gain region of at least one type III-V semiconductor layer that is present on a lattice mismatched semiconductor substrate. The gain region of the type III-V semiconductor layer has a nanoscale area using nano-cavities. The optoelectronic light emission device is free of defects | 05-19-2016 |
20160145762 | DEPOSITION MASK, METHOD OF MANUFACTURING DEPOSITION MASK, AND METHOD OF MANUFACTURING DISPLAY APPARATUS - A deposition mask including a mask body including a plurality of pattern holes; a plurality of protrusions protruding from the mask body; and a plurality of grooves formed in the mask body. A grain size of the mask body is in arrange of about 10 μm to about 1000 μm, and a difference between a maximum height of the plurality of protrusions and a maximum height of the plurality of grooves is equal to or less than 0.5 μm. | 05-26-2016 |
20160172613 | DEPOSITION APPARATUS, METHOD THEREOF AND METHOD FOR FORMING QUANTUM-DOT LAYER USING THE SAME | 06-16-2016 |
20160181532 | METHOD FOR MANUFACTURING ORGANIC LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING DISPLAY UNIT | 06-23-2016 |
20160194747 | VAPOR DEPOSITION APPARATUS AND METHOD FOR PRODUCING ORGANIC ELECTROLUMINESCENT ELEMENT | 07-07-2016 |
20160197276 | LAMINATE HAVING ORGANIC MASK AND METHOD FOR MANUFACTURING ORGANIC ELECTROLUMINESCENT DEVICE USING SAME | 07-07-2016 |
20170237006 | METHOD OF MANUFACTURING SUBSTRATE OF ORGANIC LIGHT-EMITTING DISPLAY DEVICE | 08-17-2017 |
20190145020 | THERMAL CONTROL FOR FORMATION AND PROCESSING OF ALUMINUM NITRIDE | 05-16-2019 |
20190148639 | COMPOSITION | 05-16-2019 |
20190148643 | METHOD OF MANUFACTURING SUBSTRATE OF ORGANIC LIGHT-EMITTING DISPLAY DEVICE | 05-16-2019 |