Entries |
Document | Title | Date |
20080206914 | Patterning self-aligned transistors using back surface illumination - Fabrication methods for making thin film devices on transparent substrates are described. Gate, source, and drain electrodes of a transistor are formed on a transparent substrate. The widths of the drain electrode and source electrodes are greater than a width of the gate electrode. A dielectric layer is formed on the gate electrode. A semiconductor layer is deposited proximate to the gate, source and drain electrodes. Photoresist is deposited on the semiconductor. The photoresist is exposed to light directed through the transparent substrate so that the gate electrode masks the photoresist from the light. The semiconductor layer is removed in regions exposed to the light. | 08-28-2008 |
20080206915 | MANUFACTURING METHOD FOR DISPLAY DEVICE - With an interconnected fabrication step using the prior art photolithography, major portions of resist, interconnected material, and process gas necessary during plasma processing are wasted. Furthermore, a pumping means such as a vacuum system is necessary. Therefore, the whole equipment is increased in size. Consequently, as the processed substrate is increased in size, the manufacturing cost is increased. Accordingly, a means consisting of directly spraying the resist and interconnected material as liquid drops on necessary locations over the substrate to delineate a pattern is applied. Also, a means consisting of performing a vapor-phase reaction process such as ashing or etching at or near atmospheric pressure is applied. | 08-28-2008 |
20080227232 | Method for manufacturing display device - An object is to provide a display device that can be manufactured by improvement of use efficiency of a material and simplification of a manufacturing process. A light absorbing layer is formed, an insulating layer is formed over the light absorbing layer, the light absorbing layer and the insulating layer are selectively irradiated with laser light, an irradiated region in the insulating layer is removed to form an opening in the insulating layer, and a conductive film is formed in the opening so as to be in contact with the light absorbing layer. The conductive film is formed in the opening so as to be in contact with the light absorbing layer, which is exposed, so that the light absorbing layer and the conductive layer can be electrically connected with the insulating layer interposed therebetween. | 09-18-2008 |
20080274573 | Method of fabricating linear cascade high-speed green light emitting diode - Green light emitting diodes (LED) of gallium arsenide (GaAs) are series-connected. The series connection has a small transmission attenuation and a wide bandwidth. The GaAs LED has a big forward bias and so neither extra driving current nor complex resonant-cavity epitaxy layer is needed. Hence, the present invention has a high velocity, a high efficiency and a high power while an uneven current distribution is avoided. | 11-06-2008 |
20080299693 | Manufacturing method for display device - A manufacturing method for a display device having a first conductive type thin film transistor and a second conductive type thin film transistor, comprising the steps of: in formation regions for a first conductive type thin film transistor and a second conductive type thin film transistor forming a semiconductor layer, a first insulating film covering the semiconductor layer and a gate electrode disposed on the first insulating film so as to intersect the semiconductor layer, on substrate having first conductive type impurity regions on both outer sides of a channel region of the semiconductor layer below the gate electrode forming a second insulating film, in the second insulating film and the first insulating film forming a contact hole for a drain electrode and a source electrode, in the formation region for the second conductive type thin film transistor forming electrodes and a second conductive type impurity region. | 12-04-2008 |
20080305568 | Method for promoting light emission efficiency of LED using nanorods structure - Method for the light emitting diode (LED) having the nanorods-like structure is provided. The LED employs the nanorods are subsequently formed in a longitudinal direction by the etching method and the PEC method. In addition, the plurality of the nanorods is arranged in an array so that provide the LED having much greater brightness and higher light emission efficiency than the conventional LED. | 12-11-2008 |
20090023239 | LIGHT EMITTING DEVICE PROCESSES - Light-emitting devices, and related components, processes, systems and methods are disclosed. | 01-22-2009 |
20090061553 | MAUNFACTURING METHOD OF THIN FILM TRANSISTOR ARRAY SUBSTRATE - A thin film transistor array substrate and the manufacturing method thereof are disclosed herein. A first patterned metal layer, an insulating layer, a patterned layer, and a second patterned metal layer are sequentially formed on a substrate. Then, a number of scan lines and a number of source lines are disposed on the substrate and define a number of pixel regions. A number of the storage capacitance lines are disposed on the substrate in a direction extending along the scan lines and across the pixel regions, wherein each of the storage capacitance lines is essentially perpendicular to each of the source lines and to form a cross portion. A number of patterned thin films are disposed on the storage capacitance lines and above the cross portion. | 03-05-2009 |
20090081820 | Method for manufacturing liquid crystal display device - A method for manufacturing a liquid crystal display device is disclosed. The method includes forming a gate electrode, a gate pad, a gate line on a substrate by using a first mask; forming a gate insulating film, an active layer, an ohmic contact layer and a conductive layer in sequence above the substrate including the gate electrode, the gate line and the gate pad; forming an active pattern, an ohmic contact pattern, source/drain electrodes, a data line and a data pad by using a second mask; forming a pixel electrode on the gate insulating film in a pixel region by using a third mask, to contact with the drain electrode; exposing the active pattern by etching the ohmic contact pattern using the source/drain electrodes as an etching mask; forming a passivation film above the substrate including the source/drain electrodes, the data line and the data pad; forming a first contact hole for exposing the gate pad and a second contact hole for exposing the data pad by etching the passivation and/or gate insulating films using a fourth mask; and forming a common electrode having a plurality of holes on the substrate by using a fifth mask. | 03-26-2009 |
20090087935 | Fabricating method for quantum dot of active layer of LED by nano-lithography - The present invention is to provide a “fabricating method for quantum dot active layer of LED by nano-lithography” for fabricating out a new active layer of LED of nano quantum dot structure in more miniature manner than that of the current fabricating facilities to have high quality LED with features in longer light wavelength, brighter luminance and lower forward bias voltage by directly using the current fabricating facilities without any alteration or redesign of the precision. | 04-02-2009 |
20090111204 | Vertically Aligned Mode Liquid Crystal Display - A plurality of gate lines and a plurality of data lines intersecting each other are formed on a first insulating substrate having a plurality of first cutouts are formed on the respective pixel areas defined by the data lines and the gate lines. A thin film transistor is connected to each pixel electrode. A reference electrode having a plurality of second cutouts is formed on a second substrate opposite the first substrate. The first cutouts and the second cutouts in the adjacent two pixel areas opposite each other with respect to one data line have an inversion symmetry with respect to the data line. | 04-30-2009 |
20090130789 | SIGNAL LINE FOR DISPLAY DEVICE AND THIN FILM TRANSISTOR ARRAY PANEL INCLUDING THE SIGNAL LINE - A thin film transistor (TFT) array panel with signal lines that have low resistivity is presented. The TFT array panel includes an insulating substrate, a gate line formed on the insulating substrate, a gate insulating layer formed on the gate line, a drain electrode and a data line having a source electrode formed on the gate insulating layer, the drain electrode facing the source electrode with a gap, and a pixel electrode connected to the drain electrode. In one embodiment, at least one of the gate line, the data line, and the drain electrode includes a first conductive layer made of a Mo-containing conductor, a second conductive layer made of a Cu-containing conductor, and a third conductive layer made of a MoN-containing conductor. | 05-21-2009 |
20090137078 | Semiconductro laser device - This semiconductor laser device has the same structure as the conventional broad-area type semiconductor laser device, except that both side regions of light emission areas of active and clad layers are two-dimensional-photonic-crystallized. The two-dimensional photonic crystal formed on both side regions of the light emission area is the crystal having the property that 780 nm laser light cannot be wave-guided in a resonator direction parallel to a striped ridge within the region. The light traveling in the direction can exist only in the light emission area sandwiched between two photonic crystal regions, which results in the light laterally confined by the photonic crystal region. The optical confinement of the region suppresses the loss in the light at both edges of the stripe serving as the boundary of the optical confinement, which reduces the curve of wave surface and uniforms the light intensity distributions of NFP and FFP. | 05-28-2009 |
20090142868 | ORGANIC ELECTRO-LUMINANCE DEVICE AND METHOD FOR FABRICATING THE SAME - Provided is an organic EL device and fabrication method thereof that can prevent the performance of the organic EL layer and the TFT from being lowered in forming the cathode using an E-beam heating evaporation process. The organic EL device includes a substrate, an anode, an organic EL layer, a cathode, and a transparent electrode connected with the cathode to extract the cathode to an outside, and further includes an interconnection line connected to the transparent electrode, for discharging charges accumulated on the cathode outside the organic EL device. According to the present invention, since the charges generated on the cathode can be removed through the interconnection line, the underlying organic EL layer and the TFT can be prevented from being damaged, so that the device reliability can be enhanced. | 06-04-2009 |
20090155946 | METHOD OF VARYING TRANSMITTANCE OF TRANSPARENT CONDUCTIVE LAYER, FLAT PANEL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A method of varying a transmittance of a transparent conductive film includes forming the transparent conductive film on a substrate and injecting a high energy source into the transparent conductive film to vary the transmittance of the transparent conductive film. | 06-18-2009 |
20090162961 | ACTIVE MATRIX DEVICE WITH PHOTO SENSOR - An active matrix pixel device is provided, for example an electroluminescent display device, the device comprising circuitry supported by a substrate and including a polysilicon TFT (10) and an amorphous silicon thin film PIN diode (12). Polysilicon islands are formed before an amorphous silicon layer is deposited for the PIN diode. This avoids the exposure of the amorphous silicon to high temperature processing. The TFT comprises doped source/drain regions (16 | 06-25-2009 |
20090176325 | HALFTONE MASK, METHOD OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING AN ARRAY SUBSTRATE USING THE SAME - A halftone mask includes a transparent substrate, a light-blocking layer, a first semi-transparent layer and a second semi-transparent layer. The transparent substrate includes a light-blocking area, a light-transmitting area, a first halftone area transmitting first light, and a second halftone area transmitting second light that is less than the first light. The light-blocking layer is formed in the light-blocking area to fully block light from being transmitted. The first and second semi-transparent layers are formed on the transparent substrate. At least one of the first and second semi-transparent layers is formed in the first halftone area, and the first and second semi-transparent layers are overlapped with each other on the second halftone area. | 07-09-2009 |
20090176326 | SYSTEM FOR DISPLAYING IMAGES AND METHOD FOR FABRICATING THE SAME - An exemplary embodiment of a system comprises an active matrix organic electroluminescent device, having a substrate, and a plurality of scan lines and data lines disposed on the substrate, for defining a plurality of pixel regions. Each pixel structure comprises: a switching thin film transistor, a driving thin film transistor, and a storage capacitor. The switching TFT has a light-shielding layer adapted for preventing the sunlight from being incident into the switching TFT. The driving TFT is a bottom gate thin film transistor and have advantages of precisely controlling the current provided to the organic electroluminescent diode. Further, since the storage capacitor has a multilayer structure and occupies a reduced pixel area, the aperture ratio of the pixel structure can be increased. | 07-09-2009 |
20090186438 | ARRAY SUBSTRATE FOR LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An array substrate for a liquid crystal display device includes a substrate, a gate line on the substrate, a data line crossing the gate line to define a pixel region, a thin film transistor connected to the gate line and the data line and including a gate electrode, an active layer, an ohmic contact layer, a buffer metallic layer, a source electrode and a drain electrode, and a pixel electrode in the pixel region and connected to the thin film transistor, wherein the data line includes a transparent conductive layer and an opaque conductive layer, and each of the source and drain electrodes and the pixel electrode includes a transparent conductive layer. | 07-23-2009 |
20090197362 | Array substrate for liquid crystal display device and method of manufacturing the same - A method of manufacturing an array substrate for a liquid crystal display device includes forming a gate line, a gate pad and a gate electrode on a substrate through a first mask process, forming a data line, a data pad, a source electrode, a drain electrode and an active layer on the substrate including the gate line, the gate pad and the gate electrode through a second mask process, wherein the data line crosses the gate line to define a pixel region, the source electrode is extended from the data line, the drain electrode is spaced apart from the source electrode, and the active layer is disposed between the gate electrode and the source and drain electrodes, forming a passivation layer on an entire surface of the substrate including the data line, the source electrode and the drain electrode through a third mask process, the passivation layer being etched to expose the substrate in the pixel region, a part of the drain electrode, the gate pad and the data pad, and forming a pixel electrode, a gate pad terminal and a data pad terminal by depositing a transparent conductive material on an entire surface of the substrate including the passivation layer, the pixel electrode directly contacting the exposed part of the drain electrode, the gate pad terminal directly contacting the gate pad, and the data pad terminal directly contacting the data pad. | 08-06-2009 |
20090215211 | Method Of Fabricating Microchannel Plate Devices With Multiple Emissive Layers - A method of fabricating a microchannel plate includes defining a plurality of pores extending from a top surface of a substrate to a bottom surface of the substrate where the plurality of pores has a resistive material on an outer surface that forms a first emissive layer. A second emissive layer is formed over the first emissive layer. The second emissive layer is chosen to achieve at least one of an increase in secondary electron emission efficiency and a decrease in gain degradation as a function of time. A top electrode is formed on the top surface of the substrate and a bottom electrode is formed on the bottom surface of the substrate. | 08-27-2009 |
20090215212 | Method for Fabricating A Flat Panel Display - The method for fabricating a flat panel display includes performing a first crystallization process to re-crystallize an amorphous silicon layer on a glass substrate to make the amorphous silicon layer become a polysilicon layer, forming a patterned absorbing layer to cover an active area pattern of a driving TFT and to expose portions of the polysilicon layer, performing a second crystallization process to re-crystallization the exposed portions of the polysilicon layer so that the exposed portions of the polysilicon layer has a different grain structure from the grain structure of the driving TFT, removing the patterned absorbing layer, and removing portions of the polysilicon layer to form an active area of the driving TFT and an active area of a switching TFT area in the exposed portions of the polysilicon layer of each sub-pixel. | 08-27-2009 |
20090269874 | METHOD FOR FABRICATING FLEXIBLE PIXEL ARRAY SUBSTRATE - In a method for fabricating a flexible pixel array substrate, first, a release layer is formed on a rigid substrate. Next, on the release layer, a polymer film is formed, the adhesive strength between the rigid substrate and the release layer being higher than that between the release layer and the polymer film. The polymer film is formed by spin coating a polymer monomer and performing a curing process to form a polymer layer. Afterwards, a pixel array is formed on the polymer film. The polymer film with the pixel array formed thereon is separated from the rigid substrate. | 10-29-2009 |
20090280591 | METHOD OF MANUFACTURING A DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING A DISPLAY APPARATUS USING THE SAME - Provided is a method of manufacturing a display substrate. In the method, a gate line, a data line crossing the gate line, and a switching device are formed on a base substrate. A passivation layer, a first resist layer and a second resist layer are formed on the base substrate. The first resist layer and the second resist layer are patterned to form a resist pattern and an etch-stop pattern, the etch-stop pattern having a sidewall protruding from a sidewall of the resist pattern. A portion of the passivation layer is removed to form a contact hole on a drain electrode of the switching device. A pixel electrode electrically connected to the switching device through the contact hole is formed. Thus, an undercut between an etch-stop pattern and a resist pattern may be more easily formed without over-etching a passivation layer. | 11-12-2009 |
20090311816 | AC LIGHT EMITTING DEVICE HAVING PHOTONIC CRYSTAL STRUCTURE AND METHOD OF FABRICATING THE SAME - Disclosed is an AC light emitting device having photonic crystal structures and a method of fabricating the same. The light emitting device includes a plurality of light emitting cells and metallic wirings electrically connecting the light emitting cells with one another. Further, each of the light emitting cells includes a first conductive type semiconductor layer, a second conductive type semiconductor layer disposed on one region of the first conductive type semiconductor layer, and an active layer interposed between the first and second conductive type semiconductor layers. In addition, a photonic crystal structure is formed in the second conductive type semiconductor layer. The photonic crystal structure prevents light emitted from the active layer from laterally propagating by means of a periodic array, such that light extraction efficiency of the light emitting device can be improved. Furthermore, the metallic wirings electrically connect a plurality of light emitting cells with one another such that an AC light emitting device can be provided. | 12-17-2009 |
20100009481 | METHOD FOR FABRICATING THIN FILM TRANSISTOR ARRAY SUBSTRATE - A method for fabricating a TFT array substrate includes following steps. A gate pattern and a first pad pattern are formed on a substrate. A gate insulation layer and a semiconductor layer covering the two patterns are sequentially formed. A patterned photoresist layer having different resist blocks is formed, and patterns and thicknesses of the resist blocks in different regions are adjusted. The semiconductor layer and the gate insulation layer above the first pad pattern are removed through performing an etching process and reducing a thickness of the patterned photoresist layer. After removing the patterned photoresist layer, a source pattern, a drain pattern, and a second pad pattern electrically connected to the first pad pattern are formed. A patterned passivation layer is formed on the gate insulation layer and has a second opening exposing the source pattern or the drain pattern and a third opening exposing the second pad pattern. | 01-14-2010 |
20100009482 | PHOTORESIST COMPOSITION, METHOD OF FORMING A METAL PATTERN, AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE USING THE SAME - A photoresist composition includes 5% to 50% by weight of an alkali-soluble resin, 0.5% to 30% by weight of a quinone diazide compound, 0.1% to 15 % by weight of a curing agent, and a remainder of an organic solvent. A method of forming a metal pattern includes coating a photoresist composition on a base substrate having a metal layer, and forming a first photoresist film. The photoresist composition includes 5% to 50% by weight of an alkali-soluble resin, 0.5% to 30% by weight of a quinone diazide compound, 0.1% to 15% by weight of a curing agent, and a remainder of an organic solvent. The first photoresist film is patterned, and forms a first photo pattern. The base substrate having the first photo pattern is heated, and forms a first baked pattern. The metal layer is patterned using the first baked pattern, and forms a metal pattern. | 01-14-2010 |
20100029030 | PROCESS FOR PRODUCING SURFACE EMITTING LASER, PROCESS FOR PRODUCING SURFACE EMITTING LASER ARRAY, AND OPTICAL APPARATUS INCLUDING SURFACE EMITTING LASER ARRAY PRODUCED BY THE PROCESS - Provided is a process for producing a surface emitting laser including a surface relief structure provided on laminated semiconductor layers, including the steps of transferring, to a first dielectric film, a first pattern for defining a mesa structure and a second pattern for defining the surface relief structure in the same process; and forming a second dielectric film on the first dielectric film and a surface of the laminated semiconductor layers to which the first pattern and the second pattern have been transferred. Accordingly, a center position of the surface relief structure can be aligned with a center position of a current confinement structure at high precision. | 02-04-2010 |
20100035372 | High power top emitting vertical cavity surface emitting laser - A method of adjusting a power density in a laser device including a VCSEL array providing an increased power density at a high wall-plug efficiency in that the lateral design parameters are appropriately selected on the basis of a relationship that has been established for a specified vertical design, a corresponding process technology and specified operating conditions. Thus, the total output power, the power density, and the efficiency may be optimized independently from other design criteria and application requirements by tuning only the lateral size of the individual VCSEL elements and the pitch of nearest neighbors of the elements within the array. Hence, for a lateral size of less than 30 μm and a pitch of less than 80 μm, a highly efficient VCSEL array can be provided with a high power density, thereby optimizing manufacturing costs for the output power per chip area. | 02-11-2010 |
20100041174 | LIQUID CRYSTAL DISPLAY PANEL AND METHOD FOR MANUFACTURING THE SAME - An LCD panel and a method for manufacturing the same is disclosed, in which light leakage is prevented from occurring by forming a dummy pattern in an array peripheral region. The LCD panel includes a first substrate having an array region and an array peripheral region, a gate line on the first substrate, a gate insulating film on the entire surface of the first substrate including the gate line, a data line arranged to cross the gate line for defining a pixel region on the array region, a light leakage prevention film formed between the gate and/or data lines of the array peripheral region for preventing light leakage in the panel, and a TFT and a pixel electrode formed in each pixel region. | 02-18-2010 |
20100047946 | THIN FILM ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A method of manufacturing a thin film array panel is provided, which includes: forming a gate line formed on a substrate; forming a gate insulating layer on the gate line; forming a semiconductor layer on the gate insulating layer; forming an ohmic contact layer on the semiconductor layer; forming a data line and a drain electrode disposed at least on the ohmic contact layer, forming an oxide on the data line; etching the ohmic contact layer using the data line and the drain electrode as an etch mask; and forming a pixel electrode connected to the drain electrode. | 02-25-2010 |
20100062556 | METHODS FOR MANUFACTURING THIN FILM TRANSISTOR AND DISPLAY DEVICE - The present invention provides a method for manufacturing a thin film transistor with small leakage current and high switching characteristics. In a method for manufacturing a thin film transistor, a back channel portion is formed in the thin film transistor by conducting etching using a resist mask, the resist mask is removed by removal or the like, and a superficial part of the back channel portion is further etched. Through the steps, components of chemical solution used for the removal, residues of the resist mask, and the like which exist at the superficial part of the back channel portion can be removed and leakage current can be reduced. The further etching step of the back channel portion is preferably conducted by dry etching using an N | 03-11-2010 |
20100062557 | Liquid crystal display device and fabrication method thereof - A method for fabricating an LCD device includes forming an active layer having a source region, a drain region and a channel region on the first substrate; forming first and second conductive layers on the first substrate; forming a gate electrode, a gate line and a pixel electrode by patterning the first and second conductive layers, the gate electrode and the gate line being formed as a dual layer having the first and second conductive layers and the pixel electrode being formed of the first conductive layer; forming a contact hole exposing a portion of the source and drain regions; forming a source and drain electrodes electrically connected to the source and drain regions through the contact hole; and forming a liquid crystal layer between the first and second substrates. | 03-11-2010 |
20100068842 | LONG-WAVELENGTH RESONANT-CAVITY LIGHT-EMITTING DIODE - An efficient long-wavelength light-emitting diode has a resonant-cavity design. The light-emitting diode preferably has self-organized (In,Ga)As or (In,Ga)(As,N) quantum dots in the light-emitting active region, deposited on a GaAs substrate. The light-emitting diode is capable of emitting in a long-wavelength spectral range of preferably 1.15-1.35 μm. The light-emitting diode also has a high efficiency of preferably at least 6 mW and more preferably at least 8 mW at an operating current of less than 100 mA and a low operating voltage of preferably less than | 03-18-2010 |
20100075451 | METHOD FOR MANUFACTURING A THIN FILM STRUCTURE - The present invention discloses a method for manufacturing thin film structure, which comprises the following steps: providing a substrate having a first recess and a second recess formed therein with the first recess being deeper than the second recess; depositing a first material layer and a second material layer of different thicknesses successively on the substrate; and grinding the substrate so that a flat upper surface is formed and the first material layer and the second material layer are remained in the first recess while only the first material layer is remained in the second recess. The present invention also discloses a method for manufacturing fringe field switching type liquid crystal display array substrate. With the present invention, it is possible to make the upper surface flat while forming patterns on two layers of thin films respectively by using a single mask. | 03-25-2010 |
20100112740 | SUBSTRATE FOR LIQUID CRYSTAL DISPLAY - A method of manufacturing a substrate for a liquid crystal display. The method includes forming a plurality of first line-shaped fine grooves parallel to each other in a lengthwise direction and a plurality of second line-shaped fine grooves parallel to each other in a width direction on the substrate, forming an inorganic insulating film on the substrate including the first and second line-shaped fine grooves, forming a plurality of gate lines within the first line-shaped fine grooves, forming a plurality of data lines that contacts an upper surface of the inorganic insulating film within the second line-shaped fine grooves, and forming a passivation layer on the substrate including the data lines. | 05-06-2010 |
20100124798 | Method of manufacturing light emitting device - Provided is a method of manufacturing a light emitting device from a large-area bonding wafer by using a wafer bonding method using. The method may include forming a plurality of semiconductor layers, each having an active region for emitting light, on a plurality of growth substrates. The method may also include arranging the plurality of growth substrates on which the semiconductor layers are formed on one bonding substrate and simultaneously processing each of the semiconductor layers formed on each of the growth substrates through subsequent processes. The bonding wafer may be formed of a material that reduces or prevents bending or warping due to a difference of thermal expansion coefficients between a wafer material, such as sapphire, and a bonding wafer. According to the above method, because a plurality of wafers may be processed by one process, mass production of LEDs may be possible which may reduce manufacturing costs. | 05-20-2010 |
20100136730 | THIN FILM DEVICES FOR FLAT PANEL DISPLAYS AND METHODS FOR FORMING THE SAME - Methods of forming thin film devices with different electrical characteristics on a substrate comprising a driver circuit region and a pixel region. A first and a second polysilicon pattern layers are formed on the driving circuit region and the pixel region of the substrate, respectively. A first ion implantation is performed on the second polysilicon pattern layer using a masking layer covering the first polysilicon pattern layer as an implant mask, such that the first polysilicon pattern layer has an impurity concentration different from the second polysilicon pattern layer. After removal of the masking layer, a gate dielectric layer and a gate are successively formed on each of the first and second polysilicon pattern layers and a source/drain region is subsequently formed in each of the first and second polysilicon pattern layers to define a channel region therein. | 06-03-2010 |
20100144076 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a thin film transistor array panel including an insulating substrate, a gate line formed on the insulating substrate, a gate insulating layer formed on the gate line, a drain electrode and a data line having a source electrode formed on the gate insulating layer wherein the drain electrode faces the source electrode with a gap therebetween, and a pixel electrode connected to the drain electrode. At least one of the gate line, the data line, and the drain electrode includes a first conductive layer made of a conductive oxide and a second conductive layer of Ag that is deposited adjacent to the first conductive layer. | 06-10-2010 |
20100144077 | SUBSTRATE PROCESSING APPARATUS AND METHOD AND A MANUFACTURING METHOD OF A THIN FILM SEMICONDUCTOR DEVICE - A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate processing apparatus includes a plurality of evacuable treatment chambers, at least one of said treatment chambers having a film formation function through a vapor phase reaction therein, at least one of said treatment chambers having an annealing function with light irradiation and at least one of said treatment chambers having a heating function therein. The apparatus also has a common chamber through which said plurality of evacuable treatment chambers are connected to one another, and a transportation means provided in said common chamber for transporting a substrate between each treatment chamber. | 06-10-2010 |
20100151610 | COMPOSITION FOR PHOTORESIST STRIPPER AND METHOD OF FABRICATING THIN FILM TRANSISTOR ARRAY SUBSTRATE - A composition for a photoresist stripper and a method of fabricating a thin film transistor array substrate are provided according to one or more embodiments. In one or more embodiments, the composition includes about 5-30 weight % of a chain amine compound, about 0.5-10 weight % of a cyclic amine compound, about 10-80 weight % of a glycol ether compound, about 5-30 weight % of distilled water, and about 0.1-5 weight % of a corrosion inhibitor. | 06-17-2010 |
20100159624 | ETCHANT FOR ETCHING DOUBLE-LAYERED COPPER STRUCTURE AND METHOD OF FORMING ARRAY SUBSTRATE HAVING DOUBLE-LAYERED COPPER STRUCTURES - An etchant for forming double-layered signal lines and electrodes of a liquid crystal display device includes hydrogen peroxide (H | 06-24-2010 |
20100167443 | Active matrix substrate, method of making the substrate, and display device - An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member. Each of the pixel electrodes crosses one of the gate lines, while the conductive member for the pixel electrode crosses another one of the gate lines that is adjacent to the former gate line. | 07-01-2010 |
20100197058 | THIN FILM TRANSISTOR PANEL AND MANUFACTURING METHOD THEREOF - A thin film transistor array panel including a substrate, a gate line and a gate-layer signal transmitting line of a gate driving circuit portion formed on the substrate, a gate insulating layer formed on the gate line and the gate-layer signal transmitting line and having a first contact hole exposing a portion of the gate-layer signal transmitting line, a semiconductor layer formed on the gate insulating layer, a data line including a source electrode, and a drain electrode formed on the gate insulating layer and the semiconductor layer, a data-layer signal transmitting line of the gate driving circuit portion formed on the gate insulating layer and connected to the gate-layer signal transmitting line through the first contact hole, a pixel electrode connected to the drain electrode, and a passivation layer formed on the data line, the drain electrode, and the data-layer signal transmitting line of the driving circuit portion. The data line, the drain electrode, and the data-layer signal transmitting line have a triple-layered structure including a lower layer, an intermediate layer, and an upper layer. The lower layer is made of a same layer as the pixel electrode. | 08-05-2010 |
20100197059 | ARRAY SUBSTRATE FOR LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An array substrate for a liquid crystal display device includes a substrate having a display area and a driving circuit area, a first semiconductor layer formed on the substrate in the display area, the first semiconductor layer having an active region and source and drain regions at opposing sides of the active region, a gate insulating layer formed on the first semiconductor layer, a gate electrode formed on the gate insulating layer and over the active region, the gate electrode being wider than the gate insulating layer, and an interlayer insulating layer formed over the substrate including the gate electrode, wherein the interlayer insulating layer, the gate electrode, the gate insulating layer, and the active region define a first cavity. | 08-05-2010 |
20100203663 | Organic Thin Film Transistors, Organic Light-emissive Devices and Organic Light-emissive Displays - A method of manufacturing an organic thin film transistor, the method comprising: depositing a source and drain electrode; forming a thin self-assembled layer of material on the source and drain electrodes, the thin self-assembled layer of material comprising a dopant moiety for chemically doping an organic semi-conductive material by accepting or donating charge and a separate attachment moiety bonded to the dopant moiety and selectively bonded to the source and drain electrodes; and depositing a solution comprising a solvent and an organic semi-conductive material in a channel region between the source and drain electrode. | 08-12-2010 |
20100210056 | Method of fabricating array substrate - A method of fabricating an array substrate for a display device includes steps of forming a gate line and a gate electrode on a substrate, forming a gate insulating layer and an intrinsic amorphous silicon layer, forming an oxide semiconductor layer, increasing a conductive property of the oxide semiconductor layer, forming a metal layer, forming a first photoresist pattern and a second photoresist pattern having a thinner thickness than the first photoresist pattern, forming a data line, a source drain pattern, an oxide semiconductor pattern and an active layer, removing the second photoresist pattern and exposing the source drain pattern, wet-etching the source drain pattern using a first etchant, thereby forming source and drain electrodes, wet-etching the oxide semiconductor pattern using a second etchant, thereby forming ohmic contact layers, removing the first photoresist pattern, forming a passivation layer having a drain contact hole exposing the drain electrode on the source and drain electrodes, and forming a pixel electrode connected to the drain electrode through the drain contact hole, wherein the active layer has a uniform thickness in the switching region. | 08-19-2010 |
20100210057 | Method for Manufacturing Thin Film Transistor and Method for Manufacturing Display Device - An object is to provide a method for manufacturing a thin film transistor and a display device with reduced number of masks, in which adverse effects of optical current are suppressed. A manufacturing method comprises forming a stack including, from bottom to top, a light-blocking film, a base film, a first conductive film, a first insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film; performing first etching on the whole thickness of the stack using a first resist mask formed over it; forming a gate electrode layer by side etching the first conductive film in a second etching; forming a second resist mask over the stack; and performing third etching down to the semiconductor film, and partially etching it, using the second resist mask to form a source and drain electrode layer, a source and drain region, and a semiconductor layer. | 08-19-2010 |
20100216267 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURE THEREOF - A method for a thin film transistor array panel includes forming a gate line and a pixel electrode on a substrate, forming a gate insulating layer covering the gate line, forming a data line including a source electrode and a drain electrode on the gate insulating layer, forming an interlayer insulating layer covering the data line and the drain electrode on the gate insulating layer, forming a first opening in the interlayer insulating layer, forming an organic semiconductor in the first opening, forming a passivation layer on the organic semiconductor and the interlayer insulating layer, and forming a second opening in the interlayer insulating layer to expose the pixel electrode. | 08-26-2010 |
20100221857 | CONTROL CIRCUIT FOR STACKED OLED DEVICE - A plurality of organic light-emitting diode (OLED) control circuits, each circuit comprising three electrodes, a first electrode, a second electrode independently controlled from the first electrode, and a third electrode is connected in common with the third electrode from another OLED control circuit and independently controlled from the first and second electrode. Given a first and second OLED, the first electrode is connected to a first terminal of the first OLED, the second electrode is connected to a second terminal of the first OLED and to a first terminal of the second OLED, and the third electrode is connected to a second terminal of the second OLED. At least one bypass transistor, responsive to a bypass signal, connects the second electrode and third electrode. | 09-02-2010 |
20100221858 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - To provide a semiconductor device with high performance and low cost and a manufacturing method thereof. A first region including a separated (cleavage) single-crystal semiconductor layer and a second region including a non-single-crystal semiconductor layer are provided over a substrate. It is preferable that laser beam irradiation be performed to the separated (cleavage) single-crystal semiconductor layer in an inert atmosphere, and laser beam irradiation be performed to the non-single-crystal semiconductor layer in an air atmosphere at least once. | 09-02-2010 |
20100227426 | Liquid Crystal Display Array Substrate and Its Manufacturing Method - A liquid crystal display (LCD) array substrate and its manufacturing method are provided. Scan lines and data lines of the LCD array substrate are composed of two conductive layers to decrease their RC delay. Moreover, the dielectric layer and even the planarization layer are removed from pixel areas defined by the scan lines and the data lines to increase the light penetration percentage. | 09-09-2010 |
20100240160 | METHOD OF MANUFACTURING DISPLAY DEVICE, DISPLAY DEVICE THEREFROM AND MANUFACTURING APPARATUS THEREFOR - A method of manufacturing a display device includes forming a thin film transistor on an insulating substrate, forming an electrode which is electrically connected with the thin film transistor, forming a wall which surrounds the electrode, supplying a first solvent to the electrode that is surrounded by the wall, and supplying ink which comprises an organic material and a second solvent to the electrode which has previously received the first solvent. Thus, the manufacturing method produces a display device which has a uniform organic layer. | 09-23-2010 |
20100248404 | Method for producing group III nitride-based compound semiconductor device - A method for producing a Group III nitride-based compound semiconductor device includes, before bonding a support substrate to an epitaxial layer formed on an epitaxial growth substrate, forming trenches in such a manner as to extend from the top surface of a stacked structure including the epitaxial layer to at least the interface between the epitaxial growth substrate and the bottom surface of the epitaxial layer. The trenches divide the epitaxial layer into extended device areas which encompass respective product device structures, and stress relaxation areas. A plurality of laser irradiations are performed for laser lift off such that, after each laser irradiation, the expanded device areas and the stress relaxation areas are formed by a laser-irradiated area and a laser-unirradiated area, and a strip-shaped laser-unirradiated stress relaxation area is formed at a boundary between the laser-irradiated area and the laser-unirradiated area. | 09-30-2010 |
20100248405 | METHOD OF FABRICATING DISPLAY DEVICE - To improve the use efficiency of materials and provide a technique of fabricating a display device by a simple process. The method includes the steps of providing a mask on a conductive layer, forming an insulating film over the conductive layer provided with the mask, removing the mask to form an insulating layer having an opening; and forming a conductive film in the opening so as to be in contact with the exposed conductive layer, whereby the conductive layer and the conductive film can be electrically connected through the insulating layer. The shape of the opening reflects the shape of the mask. A mask having a columnar shape (e.g., a prism, a cylinder, or a triangular prism), a needle shape, or the like can be used. | 09-30-2010 |
20100267177 | METHOD FOR FABRICATING ACTIVE DEVICE ARRAY SUBSTRATE - A method for fabricating an active device array substrate is provided. First, a substrate having a display area and a sensing area is provided. Then, a first patterned conductor layer is formed on the display area of the substrate. A gate insulator is formed on the substrate. A patterned semiconductor layer, a second patterned conductor layer and a patterned photosensitive dielectric layer are formed on the gate insulator, wherein the second patterned conductor layer includes a source electrode, a drain electrode and a lower electrode, the patterned photosensitive dielectric layer covering the second patterned conductor layer includes an interface protection layer disposed on the source electrode and the drain electrode and a photo-sensing layer disposed on the lower electrode. A passivation layer is then formed on the substrate. After that, a third patterned conductor layer including a pixel electrode and an upper electrode is formed on the passivation layer. | 10-21-2010 |
20100267178 | ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An organic electroluminescent display device includes a substrate, gate and data lines on the substrate and crossing each other to define a pixel region, a switching element at each crossing point of the gate and data lines, a driving element coupled to the switching element, a field control electrode coupled to the driving element and overlapping a channel of the driving element, and an organic electroluminescent diode coupled to the driving element. | 10-21-2010 |
20100267179 | Method for Manufacturing Semiconductor Device - A first layer is formed over a substrate, a light absorbing layer is formed over the first layer, and a layer having a light-transmitting property is formed over the light absorbing layer. The light absorbing layer is selectively irradiated with a laser beam via the layer having a light-transmitting property. When the light absorbing layer absorbs energy of the laser beam, due to emission of gas that is within the light absorbing layer, or sublimation, evaporation, or the like of the light absorbing layer, a part of the light absorbing layer and a part of the layer having a light-transmitting property in contact with the light absorbing layer are removed. By using the remaining part of the layer having a light-transmitting property or the remaining part of the light absorbing layer as a mask and etching the first layer, the first layer can be processed into a desired shape. | 10-21-2010 |
20100273282 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An LCD device and a method of fabricating the device, in which the method includes preparing an insulating substrate including a gate wiring area and sequentially forming a gate wiring layer including a silver layer and a self-assembled monolayer on the insulating substrate. A mold mask is positioned above the insulating substrate, where the mold mask has a predetermined pattern to expose the gate wiring area. A self-assembled monolayer pattern is formed by printing the predetermined pattern of the mold mask into the self-assembled monolayer and a gate wiring pattern is formed by selectively etching the silver layer using the self-assembled monolayer pattern as an etching mask, where the gate wiring pattern includes a gate pad, a gate electrode and a gate line. The LCD device includes a gate wiring layer including a self-assembled monolayer and a metal layer of silver overlying an insulating substrate. | 10-28-2010 |
20100273283 | METHOD OF MANUFACTURING FLAT PANEL DISPLAY - The present invention relates to a method for manufacturing a flat panel display. Herein, the same mask is used to form contact holes and pixel electrodes in the display substrate. Hence, the number of masks needed for manufacturing the flat panel display can be reduced to decrease the manufacturing cost. | 10-28-2010 |
20100273284 | ARRAY SUBSTRATE FOR LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing an array substrate for a liquid crystal display device includes forming a gate electrode and a gate line on a substrate through a first mask process, forming a first insulating layer, an active layer, an ohmic contact layer, a buffer metallic layer, and a data line on the substrate including the gate electrode and the gate line through a second mask process, and forming a source electrode, a drain electrode, and a pixel electrode through a third mask process, the pixel electrode extending from the drain electrode, wherein the active layer is disposed over and within the gate electrode. | 10-28-2010 |
20100273285 | Array Substrate for LCD and Method of Fabrication Thereof - A liquid crystal display array substrate. A trench is in a substrate. A gate, a gate dielectric layer, a semiconductor layer and a doped semiconductor layer are disposed in the trench, wherein the semiconductor layer comprises a channel. A source electrode and a drain electrode are respectively electrically connected to portions of the semiconductor layer on opposite sides of the channel. | 10-28-2010 |
20100279449 | DISPLAY DEVICE PROVIDED WITH SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE INSTALLED WITH DISPLAY DEVICE PROVIDED WITH SEMICONDUCTOR ELEMENT - According to one feature of the invention, a region of an insulating film surface at least overlapped with a part of a gate electrode or wiring is coated with an organic agent; a fluid in which conductive fine particles are dispersed in an organic solvent is discharged by a droplet discharging method in the insulating film surface ranging from a region where the organic agent is coated and left to a region where the organic agent is not coated. The organic agent is coated to improve wettability of the fluid in the insulating film surface, and one of each ends of the source electrode and the drain electrode adjacent to each other by interposing the curve therebetween is formed by being curved in a concave and the other end is formed by being curved in a convex. | 11-04-2010 |
20100279450 | Active Device Array Substrate and Method for Fabricating the Same - An active device array substrate and its fabricating method are provided. According to the subject invention, the elements of an array substrate such as the thin film transistors, gate lines, gate pads, data lines, data pads and storage electrodes, are provided by forming a patterned first metal layer, an insulating layer, a patterned semiconductor layer and a patterned metal multilayer. Furthermore, the subject invention uses the means of selectively etching certain layers. Using the aforesaid means, the array substrate of the subject invention has some layers with under-cut structures, and thus, the number of the time-consuming and complicated mask etching process involved in the production of an array substrate can be reduced. The subject invention provides a relatively simple and time-saving method for producing an array substrate. | 11-04-2010 |
20100285623 | Array Substrate and Method for Fabricating Thereof - The invention provides a method for manufacturing an array substrate utilizing a laser ablation process. A conductive layer can be selectively patterned by the laser ablation process without a photo mask due to different adhesions between the conductive layer and other materials. The patterned conductive layer thus formed adjoins an inorganic passivation layer to provide a substantially continuous surface. | 11-11-2010 |
20100285624 | DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME - A display device including a thin film transistor with high electric characteristics and high reliability, and a method for manufacturing the display device with high mass-productivity. In a display device including an inverted-staggered channel-stop-type thin film transistor, the inverted-staggered channel-stop-type thin film transistor includes a microcrystalline semiconductor film including a channel formation region, and an impurity region containing an impurity element of one conductivity type is selectively provided in a region which is not overlapped with source and drain electrodes, in the channel formation region of the microcrystalline semiconductor film. | 11-11-2010 |
20100291720 | Method of fabricating organic light emitting diode display - A method of fabricating an organic light emitting diode display device includes: sequentially forming a thin film transistor (TFT) array, a first electrode, a bank pattern, a spacer, and a first relevant layer on an acceptor substrate; sequentially forming a metal pattern and an organic light emission material layer on a doner substrate; aligning and attaching the acceptor substrate and the doner substrate, and forming the light emission layer by transferring the organic light emission material onto the acceptor substrate by applying power to the metal pattern; and sequentially forming the second relevant layer and the second electrode on the light emission layer-formed acceptor substrate. | 11-18-2010 |
20100291721 | PROCESSES FOR FORMING ELECTRONIC DEVICES INCLUDING SPACED-APART RADIATION REGIONS - Processes for forming an electronic device include forming a first radiation region, a second radiation region spaced apart from the first radiation region, and an insulating region. The insulating region can have a first side and a second side opposite the first side. The first radiation region can lie immediately adjacent to the first side, and the second radiation region can lie immediately adjacent to the second side. Within the insulating region, no other radiation region may lie between the first and second radiation regions, and the insulating region can include an insulating layer that includes a plurality of openings. A process for forming the electronic device can include patterning an insulating layer. | 11-18-2010 |
20100304515 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device including a thin film transistor with high electric characteristics and high reliability, and a method for manufacturing the display device in high yield are proposed. In a display device including a channel stop thin film transistor with an inverted-staggered structure, the channel stop thin film transistor with the inverted-staggered structure includes a microcrystalline semiconductor film including a channel formation region. An impurity region including an impurity element imparting one conductivity type is formed as selected in a region in the channel formation region of the microcrystalline semiconductor film which does not overlap with a source electrode or a drain electrode. In the channel formation region, a non-doped region, to which the impurity element imparting one conductivity type is not added, is formed between the impurity region, which is a doped region to which the impurity element is added, and the source region or the drain region. | 12-02-2010 |
20100311196 | THIN FILM TRANSISTOR HAVING OPENINGS FORMED THEREIN - A thin film transistor array panel includes a substrate, a plurality of first and second signal lines crossing each other on the substrate, source electrodes connected to the first signal lines, drain electrodes connected to the second signal lines, pixel electrodes connected to the drain electrodes, a first partition formed on the source and drain electrodes and having a first opening, wherein a lower width of the first opening is wider than an upper width of the first opening, an organic semiconductor formed in the first opening and at least overlapping the portions of the source electrode and the drain electrode, and a gate electrode connected to the second signal line and at least overlapping the portion of the organic semiconductor. | 12-09-2010 |
20100311197 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - As a substrate gets larger, time of manufacture is increased due to the repetition of film formations and etchings; waste disposal costs of etchant and the like are increased; and material efficiency is significantly reduced. A base film for improving adhesion between a substrate and a material layer formed by a droplet discharge method is formed in the invention. Further, a manufacturing method of a liquid crystal display device according to the invention includes at least one step for forming the following patterns required for manufacturing a liquid crystal display device without using a photomask: a pattern of a material layer typified by a wiring (or an electrode) pattern, an insulating layer pattern; or a mask pattern for forming another pattern. | 12-09-2010 |
20100317135 | METHOD OF MANUFACTURING A DISPLAY SUBSTRATE - A method of manufacturing a display substrate includes forming a first metallic pattern including gate and storage conductors and a gate electrode of a switching device on a base substrate, forming a gate insulation layer, forming a second metallic pattern and a channel portion including a source line, source and drain electrodes of the switching device, forming a passivation layer and a photoresist film on the second metallic pattern, patterning the photoresist film to form a first pattern portion corresponding to the gate and source conductors and the switching device, and a second pattern portion formed on the storage line, etching the passivation layer and the gate insulation layer, and forming a pixel electrode using the first pattern portion. Therefore, excessive etching of the stepped portion may be prevented, so that a short-circuit defect between a metallic pattern and a pixel electrode may be prevented | 12-16-2010 |
20110003417 | Active matrix substrate, method of making the substrate, and display device - An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member. Each of the pixel electrodes crosses one of the gate lines, while the conductive member for the pixel electrode crosses another one of the gate lines that is adjacent to the former gate line. | 01-06-2011 |
20110003418 | DISPLAY DEVICE INCLUDING TRANSISTOR AND MANUFACTURING METHOD THEREOF - An object is to provide a display device which operates stably with use of a transistor having stable electric characteristics. In manufacture of a display device using transistors in which an oxide semiconductor layer is used for a channel formation region, a gate electrode is further provided over at least a transistor which is applied to a driver circuit. In manufacture of a transistor in which an oxide semiconductor layer is used for a channel formation region, the oxide semiconductor layer is subjected to heat treatment so as to be dehydrated or dehydrogenated; thus, impurities such as moisture existing in an interface between the oxide semiconductor layer and the gate insulating layer provided below and in contact with the oxide semiconductor layer and an interface between the oxide semiconductor layer and a protective insulating layer provided on and in contact with the oxide semiconductor layer can be reduced. | 01-06-2011 |
20110014735 | Dual Panel Type Organic Electroluminescent Display Device and Method of Fabricating the Same - An organic electroluminescent device includes: a switching element and a driving element connected to each other on a substrate including a pixel region; a planarization layer on the switching element and the driving element, the planarization layer having a substantially flat top surface; a cathode on the planarization layer, the cathode connected to the driving element; an emitting layer on the cathode; and an anode on the emitting layer. | 01-20-2011 |
20110014736 | ORGANIC THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME - An organic thin film transistor (“TFT”) array panel includes a substrate, a gate line extending in a first direction, a data line extending in a second direction, intersecting with and insulated from the gate line, a source electrode connected to the data line, a drain electrode facing the source electrode, a pixel electrode connected to the drain electrode, and an organic semiconductor connected to the source electrode and the drain electrode, the organic semiconductor made of an organic material with photosensitivity. | 01-20-2011 |
20110014737 | THIN FILM TRANSISTOR ARRAY AND METHOD OF MANUFACTURING THE SAME - A thin film transistor array and method of manufacturing the same include a pixel electrode formed of a transparent conductive layer on a substrate, a gate line formed of the transparent conductive layer and an opaque conductive layer on the substrate, a gate electrode connected to the gate line and formed of the transparent conductive layer and an opaque conductive layer on the substrate, a gate insulating layer which covers the gate line and the gate electrode, a semiconductor layer formed on the gate insulating layer to overlap the gate electrode, a data line which intersects the gate line, a source electrode connected to the data line to overlap a part of the semiconductor layer, and a drain electrode connected to the pixel electrode to overlap a part of the semiconductor layer. | 01-20-2011 |
20110014738 | LCD TFT array plate and fabricating method thereof - Lift-off method and half-tone photolithography are used to fabricate LCD TFT array plate. Only two photo masks are used to respectively define a first and a second metal layers to accomplish the LCD TFT array plate. | 01-20-2011 |
20110033964 | THIN FILM DEPOSITION APPARATUS AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY DEVICE BY USING THE SAME - A thin film deposition apparatus and a method of manufacturing an organic light-emitting display device using the thin film deposition apparatus. The thin film deposition apparatus includes a plurality of thin film deposition assemblies, each of which includes: a deposition source that discharges a deposition material; a deposition source nozzle unit that is disposed at a side of the deposition source and includes a plurality of deposition source nozzles; a patterning slit sheet that is disposed opposite to the deposition source nozzle unit and includes a plurality of patterning slits arranged in a first direction; and a barrier plate assembly that is disposed between the deposition source nozzle unit and the patterning slit sheet, in the first direction. The barrier plate assembly includes a plurality of barrier plates that partition a space between the deposition source nozzle unit and the patterning slit sheet into a plurality of sub-deposition spaces. | 02-10-2011 |
20110039362 | MANUFACTURING METHOD OF FILM PATTERN OF MICRO-STRUCTURE AND MANUFACTURING METHOD OF TFT-LCD ARRAY SUBSTRATE - A method of forming a film pattern with micro-pattern and a method of manufacturing a thin film transistor liquid crystal display (TFT-LCD) array substrate are provided. The method of manufacturing the film pattern with micro-pattern comprises: depositing a thin film on a substrate; jetting or dropping etchant on the thin film with a predetermined etching pattern by an inkjet print device; etching the thin film by the etchant; and cleaning the thin film to form a film pattern on the substrate. | 02-17-2011 |
20110039363 | ORGANIC THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - An organic thin film transistor array panel according to an embodiment of the present invention includes: a substrate; a data line disposed on the substrate; an insulating layer disposed on the data line and having a contact hole exposing the data line; a first electrode disposed on the insulating layer and connected to the data line through the contact hole; a second electrode disposed on the insulating layer; an organic semiconductor disposed on the first and the second electrodes; a gate insulator disposed on the organic semiconductor; and a gate electrode disposed on the gate insulator. | 02-17-2011 |
20110053300 | THIN FILM DEPOSITION APPARATUS AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY DEVICE BY USING THE SAME - A thin film deposition apparatus that can be applied to manufacture large-sized display devices on a mass scale and that improves manufacturing yield, and a method of manufacturing an organic light-emitting display device by using the thin film deposition apparatus. | 03-03-2011 |
20110053301 | THIN FILM DEPOSITION APPARATUS AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY DEVICE BY USING THE SAME - A thin film deposition apparatus that is suitable for production of large-sized substrates with fine patterns includes: an electrostatic chuck including a body that contacts a substrate that constitutes a deposition target and including a supporting surface supporting the substrate, an electrode installed in the body to generate an electrostatic force on the supporting surface, and a battery that is electrically connected to the electrode in the body; a plurality of chambers that are maintained in vacuum states; at least one thin film deposition assembly disposed in one of the plurality of chambers, separated by a predetermined distance from the substrate, and forming a thin film on the substrate supported by the electrostatic chuck; and a carrier moving the electrostatic chuck through the chambers. | 03-03-2011 |
20110059561 | METHOD FOR FABRICATING A FLEXIBLE DISPLAY DEVICE - A method for fabricating a flexible display device includes providing a carrier substrate, forming a sacrificial layer on the carrier substrate, forming a metal layer and a buffer layer on the sacrificial layer in that order, forming at least one active device on the buffer layer, and separating the metal layer and the carrier substrate by laser treatment. | 03-10-2011 |
20110059562 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - An object is to provide a manufacturing method of a microcrystalline semiconductor film with favorable quality over a large-area substrate. After forming a gate insulating film over a gate electrode, in order to improve quality of a microcrystalline semiconductor film formed in an initial stage, glow discharge plasma is generated by supplying high-frequency powers with different frequencies, and a lower part of the film near an interface with the gate insulating film is formed under a first film formation condition, which is low in film formation rate but results in a good quality film. Thereafter, an upper part of the film is deposited under a second film formation condition with higher film formation rate, and further, a buffer layer is stacked on the microcrystalline semiconductor film. | 03-10-2011 |
20110065221 | Method for Manufacturing an LCD Device Employing a Reduced Number of Photomasks Including Bottom and Top Gate Type Devices - A manufacturing method of the present invention includes a process using a first multi-tone mask, in which a first conductive layer in which a transparent conductive layer and a metal layer are stacked over a substrate, a gate electrode formed of a first conductive layer, and a pixel electrode formed of a single layer of the transparent conductive layer are formed, a process using a second multi-tone mask, in which a contact hole to the pixel electrode, and an island of an i-type semiconductor layer and an n | 03-17-2011 |
20110076792 | FABRICATION METHOD OF PIXEL STRUCTURE AND THIN FILM TRANSISTOR - A method of fabricating a thin film transistor is disclosed. First, a substrate is provided and a patterned polysilicon layer is formed on the substrate. A metal layer is formed on the patterned polysilicon layer. Then, a portion of the metal layer is removed so that the remaining metal layer beside the patterned polysilicon layer forms a source and a drain. A gate insulation layer is formed on the substrate to cover the source, the drain and the patterned polysilicon layer. A gate is formed on the gate insulation layer over the patterned polysilicon layer. | 03-31-2011 |
20110081738 | Semiconductor composite apparatus, method for manufacturing the semiconductor composite apparatus, LED head that employs the semiconductor composite apparatus, and image forming apparatus that employs the LED head - A semiconductor composite apparatus includes a semiconductor thin film layer and a substrate. The semiconductor thin film layer and the substrate are bonded to each other with a layer of an alloy of a high-melting-point metal and a low-melting-point metal formed between the semiconductor thin film layer and the substrate. The alloy has a higher melting point than the low-melting-point metal. The layer of the alloy contains a product resulting from a reaction of the low-melting-point metal and a material of said semiconductor thin film layer. | 04-07-2011 |
20110092008 | LIQUID CRYSTAL DISPLAY FABRICATION METHOD - A method of fabricating an LCD includes providing first and second substrates. A gate electrode, a gate line, a connection electrode, a common electrode and a pixel electrode are formed on the first substrate through a first making process. A first insulation film is formed on the first substrate. A first insulation film pattern having multiple contact holes are formed through a second masking process. An active pattern is formed on the first substrate and source and drain electrodes are operationally connected with the active pattern through some of the contact holes. A gate electrode, a common electrode, and a pixel electrode may be formed substantially together through a slit exposure. An active pattern and source and drain electrodes may be formed substantially together. The number of masks needed to fabricate the display may be reduced to simplify a fabrication process and protect a channel region. | 04-21-2011 |
20110097835 | PHOTORESIST COMPOSITION AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE USING THE SAME - A photoresist composition includes an alkali-soluble resin, a dissolution inhibitor including a quinone diazide compound, a first additive including a benzenol compound represented by the following Chemical Formula 1, a second additive including an acrylic copolymer represented by the following Chemical Formula 2 and an organic solvent. Accordingly, heat resistance of a photoresist pattern may be improved, and the photoresist pattern may be readily stripped. As a result, crack formation in the photoresist pattern may be reduced and/or prevented. | 04-28-2011 |
20110097836 | ARRAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF REPAIRING LINE IN THE SAME - An array substrate includes a substrate, a gate line on the substrate, a data line crossing the gate line to define a pixel region, a thin film transistor connected to the gate and data lines, a pixel electrode in the pixel region, and a common electrode including first, second, third, fourth and fifth portions, wherein the first and second portions are disposed at both sides of the data line, each of the third and fourth portions is connected to the first and second portions, and the fifth portion is connected to the second portion and is extended into a next pixel region adjacent to the pixel region. | 04-28-2011 |
20110104840 | Etchant Solutions And Additives Therefor - The present invention is concerned with etchant or etching solutions and additives therefor, a process of preparing the same, a process of patterning a substrate employing the same, a patterned substrate thus prepared in accordance with the present invention and an electronic device including such a patterned substrate. An etchant solution according to the present invention for patterned etching of at least one surface or surface coating of a substrate comprises nitric acid, a nitrite salt, a halogenated organic acid represented by the formula C(H)n(Hal)m[C(H)o(Hal)p]qCθ2H, where Hal represents bromo, chloro, fluoro or b iodo, where n is 0, 1, 2 or 3, and m is 0, 1, 2 or 3, with the proviso that m+n=3; o is 0 or 1, p is 1 or 2, with the proviso that o+p=2; q is 0 or 1, with the proviso that q+m=1, 2, 3 or 4; and balance water. | 05-05-2011 |
20110104841 | MASK LEVEL REDUCTION FOR MOFET - A method of fabricating a thin film transistor for an active matrix display using reduced masking operations includes patterning a gate on a substrate. A gate dielectric is formed over the gate and a semiconducting metal oxide is deposited on the gate dielectric. A channel protection layer is patterned on the semiconducting metal oxide overlying the gate to define a channel area and to expose the remaining semiconducting metal oxide. A source/drain metal layer is deposited on the structure and etched through to the channel protection layer above the gate to separate the source/drain metal layer into source and drain terminals and the source/drain metal layer and the semiconducting metal oxide are etched through at the periphery to isolate the transistor. A nonconductive spacer is patterned on the transistor and portions of the surrounding source/drain metal layer. | 05-05-2011 |
20110104842 | MANUFACTURING METHOD OF ORGANIC EL DISPLAY - Provided is a method of manufacturing an organic EL display which includes a substrate having a TFT therein and a plurality of organic EL elements disposed on the substrate, each of the organic EL elements having a first electrode disposed on the substrate, an organic layer disposed on the first electrode, and a second electrode disposed on the organic layer, the method including: providing the substrate having the TFT therein; forming the first electrode connected to the TFT on the substrate; forming the organic layer on the first electrode; detecting a foreign substance introduced in the organic layer; forming a groove which surrounds the foreign substance in the organic layer; and forming the second electrode on the organic layer, the second electrode being separated by the groove from a region surrounded by the groove. | 05-05-2011 |
20110111541 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A silicon film is crystallized in a predetermined direction by selectively adding a metal element having a catalytic action for crystallizing an amorphous silicon and annealing. In manufacturing TFT using the crystallized silicon film, TFT provided such that the crystallization direction is roughly parallel to a current-flow between a source and a drain, and TFT provided such that the crystallization direction is roughly vertical to a current-flow between a source and a drain are manufactured. Therefore, TFT capable of conducting a high speed operation and TFT having a low leak current are formed on the same substrate. | 05-12-2011 |
20110117687 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - Provided is an organic light-emitting display device (OLED) and method of manufacturing the same. The OLED comprises a substrate and a thin film transistor, with source/drain electrodes, located at a predetermined area on the substrate. A passivation layer is located on the source/drain electrodes with a via hole exposing one of the source/drain electrodes. A first pixel electrode is located at the bottom of the via hole, electrically coupled to the exposed source/drain electrode, and extending onto the side wall of the via hole and the passivation layer. A planarization pattern fills the via hole in which the first pixel electrode is located and exposes the portion of the first pixel electrode on the passivation layer. | 05-19-2011 |
20110124136 | PROCESS FOR PRODUCING ORGANIC ELECTROLUMINESCENT PANEL - Provided is a process for producing an organic EL panel by using an ultrathin glass plate, in which the ultrathin glass plate is not “fractured” or “cut” in the production process, the organic EL element is formed reliably when formed by vacuum deposition, and recovered without damage after the production process, and there is no need for installing an additional step of cleaning the rear face of the ultrathin glass plate. The process for producing an organic EL panel according to the present invention is a process for producing an organic electroluminescent panel by forming an organic electroluminescent element on an ultrathin glass plate by vacuum deposition method, comprising forming electrodes on the ultrathin glass plate, by temporarily fixing the ultrathin glass plate to a supporting plate via a double-sided adhesive tape having a thermal release adhesive layer formed at least on one face of the base material layer, containing heat-expandable microspheres that start expansion and/or foaming at temperature higher than the vacuum deposition temperature. | 05-26-2011 |
20110124137 | ORGANIC ELECTRO-LUMINESCENCE DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is an organic electro-luminescence display device. The organic electro-luminescence display device includes: a first electrode, a first charge transport pattern, an organic emission pattern, a second charge transport pattern, and a second electrode. The first charge transport pattern is formed on the first electrode, and the organic emission pattern is on the first charge transport pattern. The second charge transport pattern is formed on the organic emission pattern, and includes an insoluble material. The second electrode is formed on the second charge transport pattern. | 05-26-2011 |
20110124138 | ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE AND METHOD OF PRODUCING THE SAME - An organic electroluminescent display device in which a plurality of light-emitting cells each having an organic electroluminescent portion are arranged on a substrate, wherein, for each of the light-emitting cells, a first transistor which controls energization on the organic electroluminescent portion, and a second transistor which switches a signal to be given to an input of the first transistor are disposed, active layers of the first and second transistors are formed by an amorphous oxide semiconductor, and, the first and second transistors are formed so that, when the first and second transistors are driven under same conditions, an amount of an output current of the first transistor is smaller than an amount of an output current of the second transistor. | 05-26-2011 |
20110136277 | METHOD OF FABRICATING LIQUID CRYSTAL DISPLAY DEVICE - Disclosed is a method of fabricating a LCD device that includes forming sacrifice layer patterns in a pixel region while forming a gate line, a first storage electrode, and a gate pad on a substrate; sequentially forming a gate insulation film, an amorphous silicon film, an impurity-doped amorphous silicon film, and a source/drain metal film on a substrate, forming a transparent conductive material on the substrate covered with a protection and then patterning the transparent conductive material to form a second storage electrode overlapping the first storage electrode and an electrode pattern having a part overlapping an area of one side edge of the sacrifice layer patterns and the other part formed on the substrate; and simultaneously forming a common electrode and a pixel electrode in the pixel region by performing a lift-off process to remove the sacrifice layer patterns on the substrate where the electrode pattern is formed. | 06-09-2011 |
20110136278 | METHOD OF FABRICATING ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE - An organic layer of an organic light emitting diode (OLED) display device is formed by transferring a transfer layer of a donor film to aligned pixel openings in a pixel defining region of the OLED display device such that the organic layer is formed in the pixel openings. Each aligned pixel opening has a pair of long sides and a pair of short sides, and the transferring of the transfer layer is performed by applying tensile force to the donor film in a direction perpendicular to the short sides of the pixel openings. | 06-09-2011 |
20110136279 | THIN FILM TRANSISTOR, THIN FILM TRANSISTOR DISPLAY PANEL, AND MANUFACTURING METHOD THEREOF - A thin film transistor is provided. The thin film transistor includes a frame formed on a substrate and having a plurality of grooves, line-shaped semiconductors disposed in at least one of the grooves, a first electrode overlapping with the line-shaped semiconductors, and second and third electrodes connected to ends of the line-shaped semiconductors. | 06-09-2011 |
20110143470 | Method and Apparatus for Manufacturing Thin-Film Transistor Array Substrate - A method and apparatus of fabricating a thin film transistor array substrate is disclosed, which is capable of reducing fabrication time owing to a simplified fabrication process, wherein at least one of steps for forming a gate pattern, forming a semiconductor pattern, forming a data pattern, removing an ohmic contact layer pattern exposed between source and drain electrode patterns, and forming a conductive layer pattern is performed by a laser scribing process. | 06-16-2011 |
20110159621 | MANUFACTURING METHOD FOR LIGHT EMITTING DEVICE - A light emitting device manufacturing method including the steps of corrugatedly scanning a laser beam along a plurality of division lines formed on a light emitting device wafer having a sapphire substrate layer and a light emitting layer to apply the laser beam to the sapphire substrate layer, thereby performing laser processing for the sapphire substrate layer and next applying an external force to a processed locus formed along each division line by the above laser processing to thereby divide the light emitting device wafer into a plurality of light emitting devices. The sapphire layer of each light emitting device has side surfaces whose horizontal sectional shape is a corrugated shape. Accordingly, the number of total reflections on the side surfaces of the sapphire layer can be reduced to thereby achieve efficient emergence of light from the sapphire layer. | 06-30-2011 |
20110159622 | THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING A DISPLAY PANEL - Embodiments of the present invention relate to a thin film transistor and a manufacturing method of a display panel, and include forming a gate line including a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an intrinsic semiconductor on the gate insulating layer, forming an extrinsic semiconductor on the intrinsic semiconductor, forming a data line including a source electrode and a drain electrode on the extrinsic semiconductor, and plasma-treating a portion of the extrinsic semiconductor between the source electrode and the drain electrode to form a protection member and ohmic contacts on respective sides of the protection member. Accordingly, the process for etching the extrinsic semiconductor and forming an inorganic insulating layer for protecting the intrinsic semiconductor may be omitted such that the manufacturing process of the display panel may be simplified, manufacturing cost may be reduced, and productivity may be improved. | 06-30-2011 |
20110165711 | CARBON NANOTUBE DISPERSION LIQUID AND METHOD OF MANUFACTURING THIN LAYER AND DISPLAY PANEL USING THE SAME - The present invention relates to a carbon nanotube dispersion liquid includes carbon nanotubes, a self assembly material having —NR | 07-07-2011 |
20110165712 | PROCESS FOR PRODUCING SURFACE-EMITTING LASER AND PROCESS FOR PRODUCING SURFACE-EMITTING LASER ARRAY - Provided is a producing of a surface-emitting laser capable of aligning a center axis of a surface relief structure with that of a current confinement structure with high precision to reduce a surface damage during the producing. The producing of the laser having the relief provided on a laminated semiconductor layer and a mesa structure, the process comprising the steps of: forming, on the layer, one of a first dielectric film and a first resist film having a first pattern for defining the mesa and a second pattern for defining the relief and then forming the other one of the films; forming a second resist film to cover the second pattern and expose the first pattern; and forming the mesa by removing the layer under the first pattern using the second resist film. | 07-07-2011 |
20110165713 | PIXEL STRUCTURE OF A THIN FILM TRANSISTOR LIQUID CRYSTAL DISPLAY AND FABRICATING METHOD THEREOF - A method of fabricating a pixel structure of a thin film transistor liquid crystal display is provided. A transparent conductive layer and a first metallic layer are sequentially formed over a substrate. The first metallic layer and the transparent conductive layer are patterned to form a gate pattern and a pixel electrode pattern. A gate insulating layer and a semiconductor layer are sequentially formed over the substrate. A patterning process is performed to remove the first metallic layer in the pixel electrode pattern while remaining the gate insulating layer and the semiconductor layer over the gate pattern. A second metallic layer is formed over the substrate. The second metallic layer is patterned to form a source/drain pattern over the semiconductor layer. A passivation layer is formed over the substrate and then the passivation layer is patterned to expose the transparent conductive layer in the pixel electrode pattern. | 07-07-2011 |
20110165714 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - A method of fabricating an organic light emitting diode (OLED) display is provided. According to the method, a first electrode overlaps a scan line, a common power supply line and/or a data line. A pixel defining layer (PDL) is etched by backside exposure so that an aperture ratio of the OLED may be enhanced. | 07-07-2011 |
20110165715 | MANUFACTURING METHOD FOR AN AXIALLY SYMMETRIC LIGHT-EMITTING DIODE ASSEMBLY - A manufacturing method for an axially symmetric light-emitting diode assembly disclosed herein includes steps of: providing a substrate; and forming a plurality of light-emitting areas on the substrate. The substrate has a central axis. The light-emitting areas are arranged with axial symmetry around the central axis while being insulated from each other. Each of the light-emitting areas has at least one light-emitting diode, and the light-emitting diodes are electrically connected to each other. Since the light-emitting areas are formed on the substrate with the axially symmetric arrangement, the axially symmetric light-emitting diode assembly can present a well symmetric light pattern. | 07-07-2011 |
20110171768 | MASK FRAME ASSEMBLY FOR THIN LAYER DEPOSITION AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY DEVICE BY USING THE MASK FRAME ASSEMBLY - A mask frame assembly for thin film deposition includes a frame including an opening portion, and a plurality of unit mask strips that are fixed to the frame after a tensile force is applied to both of end portions of the unit mask strips in a lengthwise direction of the unit mask strips. Each of the plurality of unit mask strips includes a plurality of unit masking pattern portions each including a plurality of opening patterns. Before the tensile force is applied to both of the end portions of the unit mask strips in the lengthwise direction and the unit mask strips are fixed to the frame, a width of each of the unit masking pattern portions in a widthwise direction perpendicular to the lengthwise direction increases as a function of a closeness of a portion of the unit masking pattern portion where the width is measured to a central portion of each of the unit masking pattern portions. | 07-14-2011 |
20110171769 | LASER MASK AND CRYSTALLIZATION METHOD USING THE SAME - A crystallization method includes providing a substrate having a silicon thin film; positioning a laser mask having first to fourth blocks on the substrate, each block having a periodic pattern including a plurality of transmitting regions and a blocking region; and crystallizing the silicon thin film by irradiating a laser beam through the laser mask. A polycrystalline silicon film crystallized by this method is substantially free from a shot mark, and has uniform crystalline characteristics. | 07-14-2011 |
20110177639 | METHOD FOR MANUFACTURING A THIN FILM TRANSISTOR ARRAY PANEL - A thin film transistor display panel includes gate wiring formed on an insulation substrate and including gate lines, and gate electrodes and gate pads connected to the gate lines; a gate insulation layer covering the gate wiring; a semiconductor pattern formed over the gate insulation layer; data wiring formed over the gate insulation layer or the semiconductor pattern and including source electrodes, drain electrodes, and data pads; a protection layer including a Nega-PR type of organic insulating layer formed all over the semiconductor pattern and the data wiring, wherein the thickness of the Nega-PR type of organic insulating layer in both the gate and data pad regions is smaller than in the other regions; and a pixel electrode connected to the drain electrode. When exposing the Nega-PR type of passivation layer in the pad region during a photolithography process, a photomask having a lattice pattern made of a metal such as Cr that has a line width of less than the resolution of a light exposer is used. Thus, the resulting post-etch height of the passivation layer can be selectively controlled so as to provide reduced effective thickness in the pad regions. | 07-21-2011 |
20110183454 | Method for preparing OLED by imprinting process - A method for preparing an OLED by an imprinting process is disclosed, which comprises the following steps: (A) providing a substrate, and a first electrode is formed thereon; (B) coating a mold with a first organic material ink; (C) pressing the mold coated with the first organic material ink on the substrate to transfer the first organic material ink onto the first electrode of the substrate, to obtain a first light-emitting array; (D) baking the substrate having the first light-emitting array formed thereon; and (E) forming a second electrode on the first light-emitting array. | 07-28-2011 |
20110207254 | Method of manufacturing organic light emitting display device - A method of manufacturing an organic light emitting display device includes providing a panel including a first opening portion formed in a first substrate and a second opening portion spaced apart from the first opening portion, disposing a transmissive-window forming composition in the second opening portion, forming an organic layer in the first opening portion, forming a metal layer on the panel so as to cover the first opening portion and the second opening portion, and forming a transmissive window by volatilizing the transmissive-window forming composition to open a region of the metal layer corresponding to the second opening portion. | 08-25-2011 |
20110207255 | Semiconductor Device and Method for Manufacturing the Same - A manufacturing method of an active matrix light emitting device in which the active matrix light emitting device can be manufactured in a shorter time with high yield at low cost compared with conventional ones will be provided. It is a feature of the present invention that a layered structure is employed for a metal electrode which is formed in contact with or is electrically connected to a semiconductor layer of each TFT arranged in a pixel area of an active matrix light emitting device. Further, the metal electrode is partially etched and used as a first electrode of a light emitting element. A buffer layer, a layer containing an organic compound, and a second electrode layer are stacked over the first electrode. | 08-25-2011 |
20110212557 | METHOD OF MANUFACTURING AN ARRAY SUBSTRATE FOR LCD DEVICE HAVING DOUBLE-LAYERED METAL STRUCTURE - The present invention is an array substrate for use in a liquid crystal display device, which includes a gate electrode, a gate line and a gate pad on a substrate, wherein the gate electrode, the gate line and the gate pad have a double-layered structure consisting of a first metal layer and a first barrier metal layer in series from the substrate, and wherein the first metal is one of aluminum and aluminum alloy; a gate insulation layer on the substrate covering the gate electrode, gate line and gate pad; an active layer and an ohmic contact layer sequentially formed on the gate insulation layer and over the gate electrode; a data line on the gate insulation layer perpendicularly crossing the gate line, source and drain electrodes contacting the ohmic contact layer, and a data pad on the gate insulation layer, wherein the data line, the source and drain electrode and the data pad have a double-layered structure consisting of a second barrier metal layer and a second metal layer of copper; a passivation layer formed on the gate insulation layer to cover the data line, source and drain electrodes, and data pad, wherein the passivation layer has a drain contact hole exposing a portion of the drain electrode, a gate pad contact hole exposing a portion of the gate pad, and a data pad contact hole exposing a portion of the data pad; and a pixel electrode, a gate pad terminal and a data pad terminal on the passivation layer, all of which are formed of a transparent conductive material on the passivation layer. | 09-01-2011 |
20110212558 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - As a substrate gets larger, time of manufacture is increased due to the repetition of film formations and etchings; waste disposal costs of etchant and the like are increased; and material efficiency is significantly reduced. A base film for improving adhesion between a substrate and a material layer formed by a droplet discharge method is formed in the invention. Further, a manufacturing method of a liquid crystal display device according to the invention includes at least one step for forming the following patterns required for manufacturing a liquid crystal display device without using a photomask: a pattern of a material layer typified by a wiring (or an electrode) pattern, an insulating layer pattern; or a mask pattern for forming another pattern. | 09-01-2011 |
20110217802 | Fabrication System and Manufacturing Method of Light Emitting Device - The present invention provides a vapor deposition method and a vapor deposition system of film formation systems by which EL materials can be used more efficiently and EL materials having superior uniformity with high throughput rate are formed. According to the present invention, inside a film formation chamber, an evaporation source holder in a rectangular shape in which a plurality of containers sealing evaporation material is moved at a certain pitch to a substrate and the evaporation material is vapor deposited on the substrate. Further, a longitudinal direction of an evaporation source holder in a rectangular shape may be oblique to one side of a substrate, while the evaporation source holder is being moved. Furthermore, it is preferable that a movement direction of an evaporation source holder during vapor deposition be different from a scanning direction of a laser beam while a TFT is formed. | 09-08-2011 |
20110223698 | CRYSTALLIZATION APPARATUS, CRYSTALLIZATION METHOD, METHOD OF MANUFACTURING THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY APPARATUS - Provided are a crystallization apparatus and method, which prevent cracks from being generated, a method of manufacturing a thin film transistor (TFT), and a method of manufacturing an organic light emitting display apparatus. The crystallization apparatus includes a chamber for receiving a substrate, a first flash lamp and a second flash lamp, which are disposed facing each other within the chamber, wherein amorphous silicon layers are disposed on a first surface of the substrate facing the first flash lamp and a second surface of the substrate facing the second flash lamp, respectively. | 09-15-2011 |
20110223699 | Wiring Material, Semiconductor Device Provided with a Wiring Using the Wiring Material and Method of Manufacturing Thereof - A semiconductor device having good TFT characteristics is realized. By using a high purity target as a target, using a single gas, argon (Ar), as a sputtering gas, setting the substrate temperature equal to or less than 300° C., and setting the sputtering gas pressure from 1.0 Pa to 3.0 Pa, the film stress of a film is made from −1×10 | 09-15-2011 |
20110223700 | THIN FILM TRANSISTOR LIQUID CRYSTAL DISPLAY ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - A TFT LCD array substrate and a manufacturing method thereof. The manufacturing method includes the steps of forming a thin film transistor on a substrate to form a gate line and a gate electrode connected with the gate line on the substrate; forming a gate insulating layer and a semiconductor layer on the gate electrode; forming an ohmic contact layer on the semiconductor layer; forming a transparent pixel electrode layer and a source/drain electrode metal layer in sequence on the resultant substrate, wherein the transparent pixel electrode layer is electrically insulated from the gate line and the gate electrode, and the transparent pixel electrode layer forms an ohmic contact with two sides of the semiconductor layer via the ohmic contact layer; and performing masking and etching with a gray tone mask with respect to the resultant substrate to form a transparent pixel electrode, a source/drain electrode and a data line simultaneously. | 09-15-2011 |
20110237010 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD FABRICATING THE SAME - A thin film transistor (TFT) array substrate and a method for fabricating the thin film transistor (TFT) array substrate is disclosed, wherein a passivation layer is directly subjected to exposing and patterning processes without using any photoresist, thereby simplifying the fabrication process and ensuring reduced preparation costs. In particular, the method comprises a thin film transistor (TFT) array comprising: forming a gate line and a gate electrode on a substrate; forming a semiconductor layer to be insulated from the gate electrode, and overlapped with a portion of the gate electrode; forming a source electrode and a drain electrode on both sides of the semiconductor layer, respectively, while forming a data line intersecting with the gate line; forming a passivation layer over an entire upper surface of the substrate including the source electrode and the drain electrode using a sol compound of a metal alkoxide having a photosensitive group X and a silicon alkoxide having a photosensitive group Y; light-exposing and developing the passivation layer to form a contact hole through which the drain electrode is exposed; and forming a pixel electrode to be in contact with the drain electrode through the contact hole. | 09-29-2011 |
20110244613 | WAFER-LEVEL In-P Si BONDING FOR SILICON PHOTONIC APPARATUS - Wafer-level bonding of the hybrid laser portion of a silicon photonics platform is done by forming a weakened level in a semiconductive pillar that supports laser-active layers by ion implantation into the semiconductive pillar without penetrating the laser-active layers, and by separating the laser-active layers from the semiconductive pillar by cracking the weakened level by an epitaxial lift-off processes. | 10-06-2011 |
20110244614 | METHOD OF MANUFACTURING AN OPTICAL MATRIX DEVICE - According to the method of manufacturing an optical matrix device of this invention, semiconductor films and gate insulating films which influence the characteristics of thin-film transistors most are formed in a vacuum (S | 10-06-2011 |
20110244615 | METHOD FOR MANUFACTURING PIXEL STRUCTURE - A pixel structure includes a scan line, a data line, an active element, a first passivation layer, a second passivation layer and a pixel electrode. The data line includes a first data metal segment and a second data metal layer. The active element includes a gate electrode, an insulating layer, a channel layer, a source and a drain. The channel layer is positioned on the insulating layer above the gate electrode. The source and the drain are positioned on the channel layer. The source is coupled to the data line. The first passivation layer and the second passivation layer cover the active element and form a first contact hole to expose a part of the drain. The second passivation layer covers a part edge of the drain. The pixel electrode is disposed across the second passivation layer and coupled to the drain via the first contact hole. | 10-06-2011 |
20110250713 | ACTIVE MATRIX SUBSTRATE MANUFACTURING METHOD AND LIQUID CRYSTAL DISPLAY DEVICE MANUFACTURING METHOD - Provided is an active matrix substrate manufacturing method, including the steps of: selectively forming a laminated structure pattern, by forming the laminated structure on a glass substrate ( | 10-13-2011 |
20110256649 | PIXEL PERFORMANCE IMPROVEMENT BY USE OF A FIELD SHIELD - A pixel cell ( | 10-20-2011 |
20110256650 | ELECTRO-OPTICAL DEVICE AND AN ELECTRONIC APPARATUS - An electro-optical device that drives each of plural pixels individually arranged in two dimensions so as to display information, is provided with a group of pixels displaying the information within an effective display region among the plural pixels arranged in two dimensions. A group of plural pseudo-pixels that do not contribute to the display of the information are located adjacent to a group of pixels within the effective display region. A bank layer separates a pixel in the group of the plural pseudo-pixels from a pixel in the group of pixels in the effective display region, and shields light leaked from a space between pixels located adjacently each other within the effective display region. | 10-20-2011 |
20110263059 | LIGHT-EMITTING DEVICE, LIQUID-CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING SAME - The present invention provides a structure of a semiconductor device that realizes low power consumption even where increased in screen size, and a method for manufacturing the same. The invention forms an insulating layer, forms a buried interconnection (of. Cu, Au, Ag, Ni, Cr, Pd, Rh, Sn, Pb or an alloy thereof) in the insulating layer. Furthermore, after planarizing the surface of the insulating layer, a metal protection film (Ti, TiN, Ta, TaN or the like) is formed in an exposed part. By using the buried interconnection in part of various lines (gate line, source line, power supply line, common line and the like) for a light-emitting device or liquid-crystal display device, line resistance is decreased. | 10-27-2011 |
20110263060 | Method for Manufacturing Thin Film Transistor and Method for Manufacturing Display Device - An object is to provide a method for manufacturing a thin film transistor and a display device with reduced number of masks, in which adverse effects of optical current are suppressed. A manufacturing method comprises forming a stack including, from bottom to top, a light-blocking film, a base film, a first conductive film, a first insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film; performing first etching on the whole thickness of the stack using a first resist mask formed over it; forming a gate electrode layer by side etching the first conductive film in a second etching; forming a second resist mask over the stack; and performing third etching down to the semiconductor film, and partially etching it, using the second resist mask to form a source and drain electrode layer, a source and drain region, and a semiconductor layer. | 10-27-2011 |
20110275173 | ISOLATION BY IMPLANTATION IN LED ARRAY MANUFACTURING - An improved method of creating LED arrays is disclosed. A p-type layer, multi-quantum well and n-type layer are disposed on a substrate. The device is then etched to expose portions of the n-type layer. To create the necessary electrical isolation between adjacent LEDs, an ion implantation is performed to create a non-conductive implanted region. In some embodiments, an implanted region extends through the p-type layer, MQW and n-type layer. In another embodiment, a first implanted region is created in the n-type layer. In addition, a second implanted region is created in the p-type layer and multi-quantum well immediately adjacent to etched n-type layer. In some embodiments, the ion implantation is done perpendicular to the substrate. In other embodiments, the implant is performed at an angle. | 11-10-2011 |
20110281384 | METHOD OF MANUFACTURING THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING FLAT PANEL DISPLAY USING THE SAME - A method of manufacturing a thin film transistor (TFT) and a method of manufacturing a flat panel display (FPD) using the same. A metal layer made out of Mo having no etch selectivity with a semiconductor layer so that a source electrode, a drain electrode, and an activation layer may be produced using a single mask in a single etch step. The metal layer and the semiconductor layer are simultaneously etched to form the source electrode, the drain electrode, and the activation layer, of a same width so that the area occupied by the TFT may be minimized. When the TFT is applied to the FPD, the maximal aperture ratio of pixels may be obtained and the FPD may be manufactured using only four masks. | 11-17-2011 |
20110281385 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - In a liquid crystal display device of an IPS system, to realize reduction of manufacturing cost and improvement of yield by decreasing the number of steps for manufacturing a TFT. A channel etch type bottom gate TFT structure, where patterning of a source region and a drain region and patterning of a source wiring and a pixel electrode are carried out by the same photomask. | 11-17-2011 |
20110281386 | Array Substrate for Liquid Crystal Display Device and Method of Manufacturing the Same - An array substrate for a liquid crystal display device includes a substrate, a gate line on the substrate, a thin film transistor including a gate electrode of the gate line, a gate insulating layer over the gate electrode, an active layer on the gate insulating layer and ohmic contact layers on the active layer, and source and drain electrodes over the ohmic contact layers, a pixel electrode electrically connected to the drain electrode, a data line electrically connected to the source electrode and crossing the gate line, a common electrode spaced apart from the pixel electrode, and a passivation layer directly between the pixel electrode and the common electrode and directly between the source and drain electrodes. | 11-17-2011 |
20110287565 | METHOD FOR MANUFACTURING DISPLAY DEVICE - Exposure is performed by controlling an exposure amount applied to a photosensitive resin | 11-24-2011 |
20110294244 | METHOD FOR MANUFACTURING DISPLAY DEVICE - Provided is a method of manufacturing a display device, including: forming a polymer layer which includes an organic material on a principal surface side of a support substrate; forming one of a semiconductor circuit and a display circuit on the polymer layer; irradiating the polymer layer from the support substrate side with light having a wavelength that is absorbed in the polymer layer, to thereby separate the polymer layer from the support substrate; one of thinning and removing the polymer layer; and adhering a first substrate to one of a surface of the polymer layer and a face where the polymer layer has been provided. | 12-01-2011 |
20110300654 | Method of manufacturing semiconductor light emitting device - Provided is a method of manufacturing semiconductor light emitting devices including: forming light emitting structures by sequentially depositing a first material layer, an active layer and a second material layer; forming the roughness pattern on a region of the bottom of a substrate except at least a cleaving region for forming cleaving planes; and forming n-electrodes. | 12-08-2011 |
20110300655 | LIQUID CRYSTAL DISPLAY DEVICE HAVING A COMPOSITE DATA LINE WITH A LINE OPENING EXPOSING THE TOP SURFACE AND SIDEWALLS - An LCD device includes plurality of gate lines and data lines crossing each other to define pixel regions on a substrate. A thin film transistor (TFT) resides at a crossing portion of the gate lines and the data lines and a pixel electrode is electrically connected with the TFT. The TFT includes a gate electrode, a gate insulation layer on the gate electrode and a semiconductor layer on the gate insulation layer. A portion of the data line and the semiconductor layer form a composite layer between adjacent pixel electrodes in which a line width of data line is the same as a line width of semiconductor layer. A method of fabricating the LCD device includes etching a passivation layer using a mask pattern and etching the semiconductor layer using the mask pattern and a portion of the data line as an etch mask to form the composite layer. | 12-08-2011 |
20110306157 | Opto-electrical Devices and Methods of Manufacturing the Same - A composition for ink jet printing an opto-electrical device, comprising a charge injecting and/or transporting organic material and a solvent mixture, wherein the solvent mixture is present in an amount of about 30% v/v based on the volume of the composition and comprises a first co-solvent and a second co-solvent miscible with the first co-solvent; wherein the first co-solvent comprises ethylene glycol; and the second co-solvent comprises glycerol, wherein the ratio by volume of the first co-solvent to second co-solvent is approximately 1:2. The composition provides slower drying PEDOT ink formulations having improved film uniformity within pixels and across swathe joins which do not compromise other aspects of the ink's performance. | 12-15-2011 |
20110312116 | ELECTRONIC DISPLAYS USING OPTICALLY PUMPED LUMINESCENT SEMICONDUCTOR NANOCRYSTALS - A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit tight of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used. | 12-22-2011 |
20110318856 | METHOD FOR FABRICATING THIN FILM TRANSISTOR ARRAY SUBSTRATE - A method for fabricating a TFT array substrate includes following steps. A gate pattern and a first pad pattern are formed on a substrate. A gate insulation layer and a semiconductor layer covering the two patterns are sequentially formed. A patterned photoresist layer having different resist blocks is formed, and patterns and thicknesses of the resist blocks in different regions are adjusted. The semiconductor layer and the gate insulation layer above the first pad pattern are removed through performing an etching process and reducing a thickness of the patterned photoresist layer. After removing the patterned photoresist layer, a source pattern, a drain pattern, and a second pad pattern electrically connected to the first pad pattern are formed. A patterned passivation layer is formed on the gate insulation layer and has a second opening exposing the source pattern or the drain pattern and a third opening exposing the second pad pattern. | 12-29-2011 |
20120003768 | THIN FLIM TRANSISTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF - A thin film transistor (TFT) substrate is provided in which a sufficiently large contact area between conductive materials is provided in a contact portion and a method of fabricating the TFT substrate. The TFT substrate includes a gate interconnection line formed on an insulating substrate, a gate insulating layer covering the gate interconnection line, a semiconductor layer arranged on the gate insulating layer, a data interconnection line including a data line, a source electrode and a drain electrode formed on the semiconductor layer, a first passivation layer formed on the data interconnection line and exposing the drain electrode, a second passivation layer formed on the first passivation film and a pixel electrode electrically connected to the drain electrode. An outer sidewall of the second passivation layer is positioned inside an outer sidewall of the first passivation layer. | 01-05-2012 |
20120003769 | THIN FILM TRANSISTOR SUBSTRATE, DISPLAY DEVICE HAVING THE SAME AND METHOD OF MANUFACTURING THE DISPLAY DEVICE - A thin film transistor substrate includes an insulating plate; a gate electrode disposed on the insulating plate; a semiconductor layer comprising a metal oxide, wherein the metal oxide has oxygen defects of less than or equal to 3%, and wherein the metal oxide comprises about 0.01 mole/cm | 01-05-2012 |
20120009706 | THIN FILM DEPOSITION APPARATUS, METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY DEVICE BY USING THE APPARATUS, AND ORGANIC LIGHT-EMITTING DISPLAY DEVICE MANUFACTURED BY USING THE METHOD - A thin film deposition apparatus includes: a deposition source for discharging a deposition material; a deposition source nozzle unit disposed at a side of the deposition source and including a plurality of deposition source nozzles arranged in a first direction; a patterning slit sheet disposed opposite to the deposition source nozzle unit and having a plurality of patterning slits arranged in the first direction; a barrier plate assembly including a plurality of barrier plates that are disposed between the deposition source nozzle unit and the patterning slit sheet in the first direction, the plurality of barrier plates partitioning a deposition space between the deposition source nozzle unit and the patterning slit sheet into a plurality of sub-deposition spaces; and a capacitive vacuum gauge disposed at a side of the deposition source and configured to measure a pressure inside the deposition source. | 01-12-2012 |
20120009707 | THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME - A thin film transistor includes a multi-coaxial silicon nanowire unit including a plurality of coaxial silicon nanowires on a substrate, the multi-coaxial silicon nanowire unit including a central portion and end portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode on the respective end portions, respectively, so as to electrically connect to the multi-coaxial silicon nanowire unit. | 01-12-2012 |
20120009708 | THIN FILM TRANSISTOR, ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - A thin film transistor for a thin film transistor liquid crystal display (TFT-LCD), an array substrate and manufacturing method thereof are provided. The thin film transistor comprises a source electrode, a drain electrode, and a channel region between the source electrode and drain electrode. A source extension region is connected with the source electrode, a drain extension region is connected with the drain electrode, and the source extension region is disposed opposite to the drain extension region to form a channel extension region therebetween. | 01-12-2012 |
20120021544 | DISPLAY DEVICE, METHOD FOR MANUFACTURING DISPLAY DEVICE, AND SOI SUBSTRATE - A manufacturing method is provided which achieves an SOI substrate with a large area and can improve productivity of manufacture of a display device using the SOI substrate. A plurality of single-crystalline semiconductor layers are bonded to a substrate having an insulating surface, and a circuit including a transistor is formed using the single-crystalline semiconductor layers, so that a display device is manufactured. Single-crystalline semiconductor layers separated from a single-crystalline semiconductor substrate are applied to the plurality of single-crystalline semiconductor layers. Each of the single-crystalline semiconductor layers has a size corresponding to one display panel (panel size). | 01-26-2012 |
20120028389 | METHOD FOR MANUFACTURING DISPLAY DEVICE - A method of manufacturing a display device is disclosed. In one embodiment, the method includes: i) forming a semiconductor layer where a plurality of crystallized areas and a plurality of noncrystallized areas are alternately arranged on a substrate, ii) aligning the substrate based on a difference in contrast ratio between the crystallized and noncrystallized areas and iii) performing a photo process or a photolithography process. | 02-02-2012 |
20120028390 | THIN FILM DEPOSITION APPARATUS AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY DEVICE WITH THE SAME - A thin film deposition apparatus that may prevent a patterning slit sheet from sagging and increase a tensile force of the patterning slit sheet, and a method of manufacturing an organic light-emitting display device using the same. | 02-02-2012 |
20120028391 | METHOD OF FABRICATING DISPLAY DEVICE - To improve the use efficiency of materials and provide a technique of fabricating a display device by a simple process. The method includes the steps of providing a mask on a conductive layer, forming an insulating film over the conductive layer provided with the mask, removing the mask to form an insulating layer having an opening; and forming a conductive film in the opening so as to be in contact with the exposed conductive layer, whereby the conductive layer and the conductive film can be electrically connected through the insulating layer. The shape of the opening reflects the shape of the mask. A mask having a columnar shape (e.g., a prism, a cylinder, or a triangular prism), a needle shape, or the like can be used. | 02-02-2012 |
20120028392 | ELECTROPHORETIC DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - A method of fabricating an electrophoretic display device includes forming a gate line along a direction, a gate electrode extending from the gate line, a common line parallel to the gate line, and a first storage electrode extending from the common line on a substrate, forming a gate insulating layer on an entire surface of the substrate including the gate line, the gate electrode, the common line and the first storage electrode, forming a semiconductor layer, a data line, and source and drain electrodes through a mask process, wherein the semiconductor layer is disposed over the gate electrode, the data line crosses the gate line to define a pixel region, the source electrode extends from the data line, and the drain electrode is spaced apart from the source electrode over the semiconductor layer. | 02-02-2012 |
20120034722 | MANUFACTURING METHOD FOR A THIN FILM TRANSISTOR-LIQUID CRYSTAL DISPLAY - A pixel unit of TFT-LCD array substrate and a manufacturing method thereof is disclosed. In the manufacturing method, besides a first insulating layer and a passivation layer, a second insulating layer is adopted to cover the gate island, and forms an opening on the gate island to expose the channel region, the source region and the drain region of the TFT. A gray tone mask and a photoresist lifting-off process are utilized to perform patterning, so that the TFT-LCD array substrate can be achieved with just three masks. | 02-09-2012 |
20120034723 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A method of forming a display device including source/drain electrodes on a substrate, a pixel electrode, an insulating partition wall layer, a channel-region semiconductor layer. The source/drain electrodes and the pixel electrode are formed on the substrate and in contact with each other. The insulating partition wall layer is formed on the substrate and provided with a first opening extending to between the source electrode and the drain electrode and a second opening formed on the pixel electrode and extending to the pixel electrode. The channel-region semiconductor layer is formed on the bottom of the first opening. The insulating film is formed on the partition wall layer so as to cover the first opening including the channel-region semiconductor layer. The oriented film covers the first opening from above the insulating film and the second opening from the pixel electrode. | 02-09-2012 |
20120040482 | Light-Emitting Device - To provide a long lifetime light-emitting element, in particular, to provide a long lifetime white light-emitting element, and to provide a light-emitting element having high luminous efficiency, in particular, to provide a white light-emitting element having high luminous efficiency. In a light-emitting element having, between an anode and a cathode, a first light-emitting layer containing a first light-emitting substance and a second light-emitting layer containing a second light-emitting substance which is provided to be in contact with the first light-emitting layer, the first light-emitting layer is divided into a layer provided on the anode side and a layer provided on the cathode side. At this time, a host material having a hole-transporting property is used for the layer provided on the anode side, and a host material having an electron-transporting property is used for the layer provided on the cathode side. | 02-16-2012 |
20120045861 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated. | 02-23-2012 |
20120070928 | THIN FILM DEPOSITION APPARATUS AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY DEVICE BY USING THE SAME - A thin film deposition apparatus for forming a thin film on a substrate includes: a deposition source for discharging a deposition material; a deposition source nozzle unit having a plurality of nozzles arranged in a first direction; a patterning slit sheet located opposite to the deposition source and having a plurality of patterning slits arranged in the first direction; and a barrier plate assembly including a plurality of barrier plates that are arranged between the deposition source nozzle unit and the patterning slit sheet in the first direction to partition a space between the deposition source nozzle unit and the patterning slit sheet into a plurality of sub-deposition spaces. The thin film deposition apparatus and the substrate are movable relative to each other in a movement direction that has an angle greater than about 90° and less than about 180° with respect to the first direction. | 03-22-2012 |
20120077297 | Conductor Structure, Pixel Structure, and Methods of Forming the Same - A method for forming a conductor structure is provided. The method comprises: ( | 03-29-2012 |
20120094416 | LOW-COST LARGE-SCREEN WIDE-ANGLE FAST-RESPONSE LIQUID CRYSTAL DISPLAY APPARATUS - A method of fabricating MVA active matrix substrate, and said substrate constituting an active matrix display device, characterized in that: a photolithographic procedure is performed three times for the manufacture: forming a gate electrode, a pixel electrode, a common electrode and a contact pad in said pixel electrode, forming a separate thin film semiconductor layer component, and a contact hole,forming a source electrode, a drain electrode and an orientation control electrode such that after an ohmic contact layer of a channel portion of said thin film transistor is dry etched, a partial film of a passivation layer is formed by a silicon nitride film by using a mask deposition method is provided. | 04-19-2012 |
20120100651 | METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY APPARATUS USING THE SAME - A method of manufacturing an organic light emitting device that readily increases the characteristics of an intermediate layer having an organic light emitting layer, and a method of manufacturing an organic light emitting display apparatus. The method of manufacturing an organic light emitting device includes preparing a substrate having a first electrode; disposing the substrate on a base member; disposing a donor film that covers the substrate and contacts the base member exposed around the substrate; combining the base member and the donor film; forming an intermediate layer having an organic light emitting layer on the first electrode by performing a transfer process in a laser thermal transfer apparatus after placing the base member and the donor film combined with each other with the substrate interposed therebetween in the laser thermal transfer apparatus; and forming a second electrode on the intermediate layer. | 04-26-2012 |
20120100652 | FABRICATION METHOD OF ACTIVE DEVICE ARRAY SUBSTRATE - A fabrication method of an active device array substrate is disclosed. A first metal material layer, a gate insulation material layer, a channel material layer, a second metal material layer, and a first photoresist layer are formed over a substrate sequentially. The first photoresist layer is patterned with a multi-tone mask to form a first patterned photoresist layer with two thicknesses. A first and second removing processes are performed sequentially using the first patterned photoresist layer as a mask to form a gate, a gate insulation layer, a channel layer, and a source/drain. The first patterned photoresist layer is removed. A passivation layer and a second patterned photoresist layer are formed over the substrate. A third removing process is performed to form a plurality of contact holes. A pixel electrode material layer is formed over the substrate. The second patterned photoresist layer is lifted off to form a pixel electrode. | 04-26-2012 |
20120100653 | METHODS OF MANUFACTURING MASTER, PIXEL ARRAY SUBSTRATE AND ELECTRO-OPTICAL DEVICE - A master having a substrate including displaying units and an ESD protection structure including an adjacent first region and a second region is provided. The displaying units have a predetermined-cutting region therebetween. Each displaying unit includes a peripheral circuit region and a display region having pixels. The ESD protection structure disposed on the predetermined-cutting region, located in the peripheral circuit region, and connecting the display region includes a first patterned conductive layer disposed on the first region and having an end away from the predetermined-cutting region, a first patterned dielectric layer disposed on the first patterned conductive layer and the substrate and having a first opening exposing a portion of the first patterned conductive layer, a patterned transparent conductive layer disposed corresponding to the predetermined-cutting region and connecting the first patterned conductive layer, and a second patterned dielectric layer covering the patterned transparent conductive layer and the substrate. | 04-26-2012 |
20120107983 | METHOD OF FABRICATING ARRAY SUBSTRATE - A method of fabricating an array substrate including forming a first metal layer; forming a gate insulating layer and an active layer; forming a second metal layer; forming a gate line, an etch-stopper and a gate electrode by patterning the first and second metal layers; forming an interlayer insulating layer including an opening, wherein the opening corresponds to the etch-stopper such that the opening is divided into first and second semiconductor contact holes respectively exposing both sides of the active layer; forming first and second ohmic contact layers, a source electrode, a drain electrode and a data line, the first and second ohmic contact layers respectively contacting both sides of the active layer through the first and second semiconductor contact holes; removing an exposed portion of the etch-stopper; and forming a pixel electrode contacting the drain electrode. | 05-03-2012 |
20120107984 | LASER CRYSTALLIZATION SYSTEM AND METHOD OF MANUFACTURING DISPLAY APPARATUS USING THE SAME - A laser crystallization system and a method of manufacturing a display apparatus using the laser crystallization system are disclosed. In one embodiment, the system includes i) a mother substrate in which first, second, and third display regions and ii) a stage for supporting the mother substrate and moving in first and second directions perpendicular to each other. The embodiment also includes i) a first laser irradiation unit for irradiating a first laser beam having a width greater than or identical to a width of a side of one of the first, second, and third display regions in the first direction and ii) a second laser irradiation unit spaced apart from the first laser irradiation unit and irradiating a second laser beam having a width greater than or identical to the width of the one side in the first direction. | 05-03-2012 |
20120107985 | Semiconductor Device and Its Manufacturing Method - A manufacturing method of a semiconductor device includes forming a pixel portion and a driving circuit including a semiconductor layer. A scan line in a pixel portion and a first wiring in a driving circuit are formed by patterning a first conductive layer, and a data line in the pixel portion and a second wiring in the driving circuit are formed by patterning a second conductive layer. The first wiring, a channel formation region of the semiconductor layer, and the second wiring are overlapped with each other. | 05-03-2012 |
20120115264 | PIXEL ELEMENT OF LIQUID CRYSTAL DISPLAY AND METHOD FOR PRODUCING THE SAME - The present invention provides a method for forming a pixel element. The method comprises: forming a first patterned metal layer within the pixel area; forming an insulation layer on the first patterned metal layer; forming a semiconductor layer on the insulation layer; patterning the semiconductor layer to form bend seed generation portion; and forming a second metal layer to connect the semiconductor layer. | 05-10-2012 |
20120115265 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A substrate comprising a thin-film-transistor (TFT) region, a pixel region, a gate-line region and a data-line region is provided. A transparent conductive layer and a first metal layer are orderly formed on the substrate. A conductive stack layer is formed within each of the TFT/pixel/gate-line regions and the end of the data-line region. Next, a first insulating layer and a semiconductor layer are orderly formed, and a patterned first insulating layer and a patterned semiconductor layer are formed above the conductive stack layer within the TFT region. Then, a second metal layer and a first photoresist layer are respectively formed. Afterwards, the second and the first metal layers are patterned by using the first photoresist layer as a photomask. Finally, the first photoresist layer is reflowed by heat, and part of the reflowed first photoresist layer covers a channel formed within the TFT region. | 05-10-2012 |
20120129287 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one aspect of the present invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide is applied as an electrode on the side of injecting a hole (a hole injection electrode; an anode) instead of the conventional conductive transparent oxide layer such as ITO. In addition, according to another aspect of the invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide, each of which content is different, is applied as a hole injection electrode. Preferably, silicon or a silicon oxide, concentration of the conductive layer on the side where it is connected to a TFT ranges from 1 atomic % to 6 atomic % and a silicon or silicon oxide concentration on the side of a layer containing an organic compound ranges from 7 atomic % to 15 atomic %. | 05-24-2012 |
20120129288 | DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME - A display device including a thin film transistor with high electric characteristics and high reliability, and a method for manufacturing the display device with high mass-productivity. In a display device including an inverted-staggered channel-stop-type thin film transistor, the inverted-staggered channel-stop-type thin film transistor includes a microcrystalline semiconductor film including a channel formation region, and an impurity region containing an impurity element of one conductivity type is selectively provided in a region which is not overlapped with source and drain electrodes, in the channel formation region of the microcrystalline semiconductor film. | 05-24-2012 |
20120135555 | METHOD FOR MANUFACTURING THIN FILM TRANSISTOR ARRAY PANEL - A method for manufacturing a thin film transistor array panel, including: sequentially forming a first silicon layer, a second silicon layer, a lower metal layer, and an upper metal layer on a gate insulating layer and a gate line; forming a first film pattern on the upper metal layer; forming a first lower metal pattern and a first upper metal pattern that includes a protrusion, by etching the upper metal layer and the lower metal layer; forming first and second silicon patterns by etching the first and second silicon layers; forming a second film pattern by ashing the first film pattern; forming a second upper metal pattern by etching the first upper metal pattern; forming a data line and a thin film transistor by etching the first lower metal pattern and the first and second silicon patterns; and forming a passivation layer and a pixel electrode on the resultant. | 05-31-2012 |
20120135556 | METHODS FOR MANUFACTURING ORGANIC EL DISPLAY PANEL AND ORGANIC EL DISPLAY DEVICE - Provided is an organic EL display panel offering improved luminance without increasing the current density of current flowing through organic light-emitting layers, comprising: substrate; TFT layer formed on substrate; planarizing film formed above TFT layer and having contact holes; lower electrodes arranged above planarizing film in a matrix in one-to-one correspondence with pixel units, and brought into conduction with TFT layer via contact holes; grid-shaped bank formed above planarizing film and defining openings corresponding one-to-one to lower electrodes; organic light-emitting layers formed in openings; and upper electrode formed above light-emitting layers. Each contact hole is positioned between a pair of openings adjacent in the column direction. At least one of opposing sides of any pair of openings adjacent in the column direction is reduced in width in the row direction and extends in the column direction so as to be adjacent in the row direction to the corresponding contact hole. | 05-31-2012 |
20120142131 | METHOD OF MANUFACTURING DISPLAY APPARATUS - Provided is a method of manufacturing a display apparatus, including forming a drive circuit and a light-emitting portion on a substrate in which the forming the light-emitting portion includes forming a transparent anode electrode for applying a charge to an emission layer, forming a first coating layer and a second coating layer on the transparent anode electrode, removing the first coating layer by etching using the second coating layer as a mask, and forming a layer including the emission layer on a part of the transparent anode electrode from which the first coating layer is removed. A surface of the transparent anode electrode becomes as clean as a surface cleaned with ultraviolet irradiation. | 06-07-2012 |
20120142132 | METHOD OF MANUFACTURING OPTICAL MATRIX DEVICE - According to a method of manufacturing an optical matrix device of this invention, an extension-promoting pattern that promotes extension of droplets printed and coated is formed on an insulation film as a foundation layer where printing patterns are to be formed, whereby the droplets extend along the extension-promoting pattern. Moreover, an extension-inhibiting pattern is formed at end portions of the printing patterns as to intersect the printing patterns, i.e., the extension-promoting pattern, whereby the extension-inhibiting pattern stops extension of the droplets extending along the extension-promoting pattern. Accordingly, control may be made of positional accuracy of the liquid droplets. | 06-07-2012 |
20120149139 | LOW-COST LARGE-SCREEN WIDE-ANGLE FAST-RESPONSE LIQUID CRYSTAL DISPLAY APPARATUS - A method of fabricating an IPS active matrix substrate, and said substrate constituting an active matrix display device, characterized in that: a photolithographic procedure is performed for three times for the manufacture: forming a gate electrode, a comb pixel electrode, a common electrode for shielding a video signal line (or a source electrode), a contact pad in said pixel electrode, and a video signal line for shielding said contact pad in common electrode, forming a separate thin film semiconductor layer component, and a contact hole, forming a source electrode, a drain electrode, a common electrode at the center of a pixel and a comb common electrode, such that after an ohmic contact layer of a channel portion of said thin film transistor is dry etched, a partial film of a passivation layer is formed by a silicon nitride film by using a mask deposition method is provided. | 06-14-2012 |
20120164771 | MASK - Disclosed is a mask which can be used for forming a pattern on a substrate in a deposition apparatus, and a method for manufacturing a display device using the same. The mask includes a mask pattern and a frame. The mask has a tapered shape where the inner surface of the frame tapers in a direction from an upper end to a lower end. A thin film pattern is formed on a substrate using the mask pattern of the mask. The frame supports an outer of the mask pattern, and includes an inclined plane which tapers in an inner direction where the mask pattern is disposed. | 06-28-2012 |
20120164772 | METHOD OF FABRICATING ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE - A method of forming an organic luminescent layer includes: sequentially disposing a shadow mask and a substrate over disposing at least one crucible having first and second organic materials therein; and heating up the first and second organic materials to form the organic luminescent layer on the substrate, wherein the second organic material has one of a heat capacity smaller than the first organic material and a sublimableness. | 06-28-2012 |
20120171792 | METHOD OF FABRICATING A PIXEL ARRAY - A method of fabricating a pixel array is provided. A first metal layer is formed over a substrate. The metal layer is patterned to form a plurality of data lines and a plurality of drain patterns adjacent to each data line. The data lines and the drain patterns are separated from each other. An oxide semiconductor layer and a first insulation layer covering the oxide semiconductor layer are formed over the substrate. A second metal layer is formed on the first insulation layer and patterned to form a plurality of scan lines intersected with the data lines and the drain patterns. By using the scan lines as a mask, the oxide semiconductor layer and the first insulation layer are patterned to form a plurality of oxide semiconductor channels located under each scan line. Each oxide semiconductor channel is located between one data line and one drain pattern. | 07-05-2012 |
20120171793 | METHOD OF MANUFACTURING A DISPLAY SUBSTRATE - A method of manufacturing a display substrate includes forming a common electrode line, a gate line, a data line and a switching element connected to the gate and data lines on an insulation substrate. A first pixel electrode and an insulation layer are sequentially formed on the insulation substrate. A first photoresist pattern having a first hole and a second hole is formed from a first photoresist layer on the insulation substrate. A first transparent electrode layer is coated on the insulation substrate. A second photoresist layer is coated on the insulation substrate. The second photoresist layer is exposed and developed to form a second photoresist pattern remaining in the first hole and the second hole. The first transparent electrode layer is patterned using the second photoresist pattern, to form a second pixel electrode. | 07-05-2012 |
20120171794 | POLYSILICON THIN FILM TRANSISTOR DEVICE AND METHOD OF FABRICATING THE SAME - A polysilicon thin film transistor device includes a gate metal pattern including a gate electrode and a gate line formed on a substrate, the gate metal pattern having a stepped portion, a gate insulating film formed on the gate metal pattern, a polysilicon semiconductor layer formed on the gate insulating film, the polysilicon semiconductor layer including an active region, lightly doped drain regions, a source region, and a drain region, a source electrode connected to the source region and a drain electrode connected to the drain region on the polysilicon semiconductor layer, and a pixel electrode connected with the drain electrode. | 07-05-2012 |
20120171795 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A method of performing irradiation of laser light is given as a method of crystallizing a semiconductor film. However, if laser light is irradiated to a semiconductor film, the semiconductor film is instantaneously melted and expands locally. The temperature gradient between a substrate and the semiconductor film is precipitous, distortions may develop in the semiconductor film. Thus, the film quality of the crystalline semiconductor film obtained will drop in some cases. With the present invention, distortions of the semiconductor film are reduced by heating the semiconductor film using a heat treatment process after performing crystallization of the semiconductor film using laser light. Compared to the localized heating due to the irradiation of laser light, the heat treatment process is performed over the entire substrate and semiconductor film. Therefore, it is possible to reduce distortions formed in the semiconductor film and to increase the physical properties of the semiconductor film. | 07-05-2012 |
20120178196 | METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY DEVICE - A method of manufacturing an organic light-emitting display device includes forming a silicon layer and a gate insulating film over a substrate having a transistor region and a capacitor region; forming a halftone photoresist over the substrate; patterning the silicon layer and the gate insulating film; forming a residual photoresist by subjecting the halftone photoresist to an ashing process to leave part of the halftone photoresist over the transistor region; and doping at least a portion of the silicon layer with impurities by applying the impurities over an entire region of the substrate. | 07-12-2012 |
20120178197 | THIN FILM TRANSISTOR ARRAY PANEL FOR LIQUID CRYSTAL DISPLAY HAVING PIXEL ELECTRODE - A TFT array panel includes an insulating substrate, a gate line, a storage electrode line, a gate insulating layer, a semiconductor island formed on the gate insulating layer, and a data line and a drain electrode formed thereon. The data line and drain electrode are covered with a passivation layer. A pixel electrode is formed on the passivation layer and connected to the drain electrode through a contact hole. The TFT array panel is covered with an alignment layer rubbed approximately in a direction from the upper left corner to lower right corner of the TFT array panel or the pixel electrodes. The pixel electrode overlaps the gate line and data line and has an expansion located near the upper left corner of the pixel electrode to increase the width of the corresponding overlapping area between the pixel electrode and the gate line and/or data line. | 07-12-2012 |
20120184059 | METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE - A light emitting device includes a substrate and a plurality of pixel rows. The pixel rows are arranged on the substrate. Each of the pixel rows includes a first sub-pixel row having a plurality of first sub-pixels, a second sub-pixel row having a plurality of second sub-pixels, and a third sub-pixel row having a plurality of third sub-pixels. In the m | 07-19-2012 |
20120184060 | MANUFACTURING METHOD FOR ARRAY SUBSTRATE WITH FRINGE FIELD SWITCHING TYPE THIN FILM TRANSISTOR LIQUID CRYSTAL DISPLAY - A manufacturing method for an array substrate with a fringe field switching (FFS) type thin film transistor (TFT) liquid crystal display (LCD) includes the following steps. A pattern of a gate line ( | 07-19-2012 |
20120190143 | METHOD FOR FABRICATING LIQUID CRYSTAL DISPLAY DEVICE - A method of fabricating an LCD device is discussed. The method in one embodiment includes: forming a gate electrode and a gate pad on a substrate, which is defined into a display area corresponding to pixel regions and a non-display area corresponding to pad regions, through a first mask process; sequentially stacking a gate insulation film, an amorphous silicon layer, an impurity-doped amorphous silicon layer and a metal film on the substrate provided with the gate electrode and then forming an active layer, source/drain electrode and a data line through a second mask process which uses one of half-tone and diffraction masks; and forming a transparent conductive material on the substrate provided with the source/drain electrode and forming a pixel electrode through a third mask process. | 07-26-2012 |
20120190144 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME TO PREVENT DAMAGE TO AN INTERLAYER - An organic light emitting display device prevents damage to an interlayer including an emitting layer and reduces IR drop in face electrodes, and a method of manufacturing the same. The organic light emitting display device includes: a substrate; a pixel electrode disposed on the substrate; an interlayer comprising an emitting layer disposed on the pixel electrode; a face electrode on the interlayer; and a sealing member disposed on the face electrodes, wherein the sealing member and the face electrode are bent along a curve of an upper portion of a layer below the face electrode so as to prevent a gap between the sealing member and the face electrode, and between the face electrode and the layer below the face electrode. | 07-26-2012 |
20120190145 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A method of forming a display device including source/drain electrodes on a substrate, a pixel electrode, an insulating partition wall layer, a channel-region semiconductor layer. Source/drain electrodes of a thin-film transistor are formed on the substrate, while a pixel electrode is connected to the source/drain electrodes. The insulating partition wall layer is formed on the substrate, where the partition wall layer has a first opening extending to between the source electrode and the drain electrode. Furthermore, a channel-region semiconductor layer is formed by depositing a semiconductor layer over the partition wall layer. The channel-region semiconductor layer is on the bottom of the first opening to be separate from a upper part of the partition wall layer. | 07-26-2012 |
20120196395 | METHOD FOR CRYSTALLIZING THIN FILM, METHOD FOR MANUFACTURING THIN FILM SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING ELECTRONIC APPARATUS, AND METHOD FOR MANUFACTURING DISPLAY DEVICE - A method for crystallizing a thin film A gate insulating film formed on a substrate so as to cover a gate electrode. A light absorption layer is formed thereon through a buffer layer. Energy lines Lh are applied to the light absorption layer from a continuous-wave laser such as a semiconductor laser. This anneals only a surface side of the light absorption layer Lh and produces a crystalline silicon film obtained by crystallizing the amorphous silicon film using heat generated by thermal conversion of the energy lines Lh at the light absorption layer and heat of the annealing reaction. | 08-02-2012 |
20120202305 | ETCHANT FOR ETCHING DOUBLE-LAYERED COPPER STRUCTURE AND METHOD OF FORMING ARRAY SUBSTRATE HAVING DOUBLE-LAYERED COPPER STRUCTURES - An etchant for forming double-layered signal lines and electrodes of a liquid crystal display device includes hydrogen peroxide (H | 08-09-2012 |
20120208310 | NON-HALOGENATED ETCHANT AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE USING THE NON-HALOGENATED ETCHANT - Exemplary embodiments of the present invention disclose a non-halogenated etchant for etching an indium oxide layer and a method of manufacturing a display substrate using the non-halogenated etchant, the non-halogenated etchant including nitric acid, sulfuric acid, a corrosion inhibitor including ammonium, a cyclic amine-based compound, and water. | 08-16-2012 |
20120208311 | ORGANIC LIGHT EMITTING DISPLAY AND METHOD OF MANUFACTURING THE SAME - A top emission organic light emitting display and a method of manufacturing the same. The organic light emitting display includes a substrate, a plurality of thin film transistors (TFT) on the substrate, a plurality of first electrodes coupled to the plurality of TFTs, auxiliary electrodes having a mesh structure defining areas where the plurality of first electrodes are located, a pixel defining layer on a substantially entire area of the substrate and patterned to expose the first electrodes and the auxiliary electrodes, an organic light emission layer on the substantially entire area of the substrate including the exposed first electrodes and auxiliary electrodes, and second electrodes on the organic light emission layer. Steps are formed at lower parts of the auxiliary electrodes, and the second electrodes are coupled to the auxiliary electrodes through contact regions in which the auxiliary electrodes are exposed due to the steps. | 08-16-2012 |
20120231567 | METHOD OF FORMING METAL PATTERN AND METHOD OF MANUFACTURING DISPLAY SUBSTRATE HAVING THE SAME - A method of forming a metal pattern includes forming a precursor layer including a metal precursor on a substrate, irradiating a light on the precursor layer to form a metal seed layer having a predetermined pattern, and electroless-plating the metal seed layer to form a metal pattern layer. | 09-13-2012 |
20120252148 | ECHTANT AND METHOD FOR MANUFACTURING DISPLAY DEVICE USING THE SAME - An etchant according to exemplary embodiments of the present invention includes about 0.5 wt % to about 20 wt % of persulfate, about 0.01 wt % to about 2 wt % of a fluorine compound, about 1 wt % to about 10 wt % of inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 5 wt % of a chlorine compound, about 0.05 wt % to about 3 wt % of copper salt, about 0.1 wt % to about 10 wt % of organic acid or organic acid salt, and water. | 10-04-2012 |
20120252149 | METHOD OF MANUFACTURING ORGANIC ELECTROLUMINESCENCE DISPLAY DEVICE - Provided is a method of manufacturing an organic electroluminescence display device including an emission region, the emission region including multiple organic compound layers arranged therein, each of the organic compound layers being provided between a pair of electrodes and including at least an emission layer, the method including: forming in the entire emission region an organic compound layer which is insoluble in water; forming on the organic compound layer a mask layer containing a water-soluble material in a predetermined pattern; removing a part of the organic compound layer which is formed in a region which is not covered with the mask layer; removing the mask layer; drying the organic compound layer; and forming a common layer on the organic compound layers, in which the steps from the drying of the organic compound layer to the forming of a common layer are carried out in a vacuum. | 10-04-2012 |
20120252150 | METHOD OF MANUFACTURING ORGANIC ELECTROLUMINESCENCE DISPLAY DEVICE - A method of manufacturing an organic electroluminescence display device includes an organic compound layer which is placed between a pair of electrodes and includes at least an emission layer, the organic compound layer being two-dimensionally arranged, includes forming the organic compound layer which is insoluble in water in an entire emission region on a substrate, providing a mask layer containing a water-soluble material in at least a part of a region on the organic compound layer, removing a part of the organic compound layer which is provided in a region which is other than the region in which the mask layer is provided, removing the mask layer, and forming, after the removing of the mask layer, a layer containing at least an alkali metal or an alkaline-earth metal in a region including at least the emission region. | 10-04-2012 |
20120252151 | METHOD OF MANUFACTURING ORGANIC ELECTROLUMINESCENCE DEVICE - A method of manufacturing an organic electroluminescence device includes forming a first organic electroluminescence layer at least on a first lower electrode, forming a first protective layer on the first organic electroluminescence layer, processing the first organic electroluminescence layer and the first protective layer, forming a second organic electroluminescence layer at least on a second lower electrode, forming a second protective layer on the second organic electroluminescence layer, and processing the second organic electroluminescence layer and the second protective layer. The second organic electroluminescence layer and the second protective layer, which have been processed by the processing the second organic electroluminescence layer and the second protective layer, cover an end portion of the first organic electroluminescence layer and an end portion of the first protective layer, which have been processed by the processing the first organic electroluminescence layer and the first protective layer. | 10-04-2012 |
20120252152 | DISPLAY PANEL, ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - An array substrate comprises data lines, gate lines, thin film transistors and pixel electrodes formed on a base substrate. Pixel units are defined by intersecting the data lines and the gate lines, the thin film transistors are formed at the intersections of the data lines and the gate lines, and the data lines extend across each of the pixel units in the middle of the pixel units. At least two thin film transistors for controlling a same pixel electrode are respectively formed on both sides of the data line in each pixel unit. | 10-04-2012 |
20120264244 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An object is to manufacture a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (for dehydration or dehydrogenation) is performed to improve the purity of the oxide semiconductor film and reduce impurities including moisture or the like. After that, slow cooling is performed under an oxygen atmosphere. Besides impurities including moisture or the like exiting in the oxide semiconductor film, heat treatment causes reduction of impurities including moisture or the like exiting in a gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor and in contact therewith. | 10-18-2012 |
20120264245 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - For forming a gate electrode, a conductive film with low resistance including Al or a material containing Al as its main component and a conductive film with low contact resistance for preventing diffusion of Al into a semiconductor layer are laminated, and the gate electrode is fabricated by using an apparatus which is capable of performing etching treatment at high speed. | 10-18-2012 |
20120270348 | Semiconductor Device and Method for Manufacturing the Same - It is an object to obtain a liquid crystal display device in which a contact defect is reduced, increase in contact resistance is suppressed, and an opening ratio is high. The present invention relates to a liquid crystal display device having a substrate; a thin film transistor provided over the substrate, which includes a gate wiring, a gate insulating film, an island-shaped semiconductor film, a source region, and a drain region; a source wiring which is provided over the substrate and is connected to the source region; a drain electrode which is provided over the substrate and is connected to the drain region; an auxiliary capacitor provided over the substrate; a pixel electrode connected to the drain electrode; and a protective film formed so as to cover the thin film transistor and the source wiring, where the protective film has an opening, and the auxiliary capacitor is formed in the area where the opening is formed. | 10-25-2012 |
20120288975 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An organic light emitting display device (OLED) and a method of fabricating the same. The OLED includes: a substrate; a thin film transistor on the substrate and including a source electrode and a drain electrode; a first insulating layer on the substrate; a second insulating layer on the first insulating layer and including a trench; a via hole formed in the trench over the first and second insulating layers and exposing a portion of the source electrode or the drain electrode; a first electrode in the trench and connected to one of the source electrode and the drain electrode through the via hole; a pixel defining layer on the first electrode and having an opening exposing the first electrode; an organic layer in the opening and having at least an organic emission layer; and a second electrode on an entire surface of the substrate having the organic layer. | 11-15-2012 |
20120295379 | DEPOSITION MASK, DEPOSITION APPARATUS, AND DEPOSITION METHOD - A deposition mask | 11-22-2012 |
20120295380 | ETCHANT AND METHOD OF MANUFACTURING AN ARRAY SUBSTRATE USING THE SAME - An etchant includes about 0.1 percent by weight to about 30 percent by weight of ammonium persulfate (NH | 11-22-2012 |
20120301985 | METHOD OF ADJUSTING GAP BETWEEN BUMPS IN PIXEL REGION AND METHOD OF MANUFACTURING DISPLAY DEVICE USING THE METHOD - A method of manufacturing a display device includes forming a buffer layer on a top surface of a substrate, forming an amorphous silicon layer on a top surface of the buffer layer, and forming a polysilicon layer by irradiating the amorphous silicon layer with a laser beam. A plurality of first protrusions are formed on the top surface of the polysilicon layer, and a plurality of second protrusions are formed on a surface of the buffer layer by transferring the shape of the polysilicon layer to the buffer layer. A gate insulator on the buffer layer is then formed in the shape of bumps of the second protrusions. | 11-29-2012 |
20120301986 | ORGANIC LAYER DEPOSITION APPARATUS AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS BY USING THE SAME - An organic layer deposition apparatus including: a deposition source configured to discharge a deposition material; a deposition source nozzle unit arranged at a side of the deposition source and including a plurality of deposition source nozzles; a patterning slit sheet facing the deposition source nozzle unit and including a plurality of patterning slits, the patterning slit sheet being smaller than the substrate in at least one of a first direction or a second direction perpendicular to the first direction; a blocking member configured to be disposed between the substrate and the deposition source to block at least a portion of the substrate; and a heating member on the blocking member and configured to heat the blocking member, and the substrate is spaced apart from the organic layer deposition apparatus by a predetermined distance, and the substrate or the organic layer deposition apparatus is movable relative to the other. | 11-29-2012 |
20120301987 | TOP EMISSION TYPE ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - A top emission type organic electroluminescent display device includes a first substrate including a pixel region, a switching TFT and a driving TFT, a passivation layer exposing a drain electrode of the driving TFT, a connection electrode contacting the drain electrode of the driving TFT, a partition wall corresponding to a border between adjacent pixel regions and overlapping an edge portion of the connection electrode, an x-ray shield layer on the connection electrode between adjacent partition walls, the x-ray shield layer patterned in the pixel region due to the partition wall, a first electrode on the x-ray shield layer, a bank covering the partition wall and contacting an edge portion of the first electrode, an organic emission layer on the first electrode between adjacent banks, a second electrode on the organic emission layer, and a second substrate facing the first substrate and being transparent. | 11-29-2012 |
20120301988 | METHOD OF FORMING PIXEL STRUCTURE - A method of forming a pixel structure is provided. A pixel electrode made of transparent conductive material is formed to electrically connect a data line and a source electrode of a switching element of the adjacent sub-pixel region so that a plurality of sub-pixels can share the same data line. The number of data lines can be reduced, and the aperture ratio (AR) can be improved. | 11-29-2012 |
20120309122 | LIGHT EMITTING DISPLAY AND METHOD OF MANUFACTURING THE SAME - The present invention is to provide an organic light emitting display and a method of manufacturing the same. The light emitting display according to the present invention includes: a first substrate on which a plurality of light emitting devices having first electrodes, organic light emitting layers, and second electrodes are disposed; a second substrate disposed to face the first substrate; a dam member disposed between the first substrate and the second substrate to surround the plurality of light emitting devices; an inorganic sealing material disposed between the first substrate and the second substrate in an outer area of the dam member and attaching the first substrate to the second substrate; and a silicon filling material provided between the first substrate and the second substrate inward of the dam member to be in contact with the second electrodes. | 12-06-2012 |
20120315717 | Methods of manufacturing wire, TFT, and flat panel display device - A method of manufacturing a wire may include forming a wire pattern, which at least includes a first conductive layer, a second conductive layer, and a third conductive layer arranged in the order stated on a substrate. At least the second conductive layer may have higher etch selectivity than the first and third conductive layers. Side holes may be formed by removing portions of the second conductive layer at ends of the wire pattern, and fine wires may be formed by injecting a masking material into the side holes and patterning the wire pattern by using the masking material as a mask. | 12-13-2012 |
20120322187 | ETCHANTS AND METHODS OF FABRICATING METAL WIRING AND THIN FILM TRANSISTOR SUBSTRATE USING THE SAME - An etchant includes: a persulfate; a fluoride; an inorganic acid; a cyclic amine; a sulfonic acid; and one of an organic acid and a salt thereof. | 12-20-2012 |
20120329187 | APPARATUS FOR MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY DEVICE, AND MANUFACTURING METHOD USING THE APPARATUS - An apparatus for manufacturing an organic light-emitting display device, and a manufacturing method using the apparatus. An apparatus includes a roll drum unit configured to removably adhere a flexible substrate and a transfer film thereon such that the transfer film overlaps the flexible substrate, and a laser irradiation unit configured to irradiate a laser in a pattern toward the transfer film adhered on the roll drum unit and transfer a transfer layer of the transfer film onto the flexible substrate to form an emission layer. | 12-27-2012 |
20120329188 | DEPOSITION MASK, DEPOSITION APPARATUS, AND DEPOSITION METHOD - A deposition mask is used to pattern a thin film | 12-27-2012 |
20120329189 | FABRICATING METHOD OF ORGANIC ELECTRO-LUMINESCENCE DISPLAY UNIT - A fabricating method of an organic electroluminescent display unit is provided. A gate and a gate insulating layer covering the gate are formed on the substrate. A patterned metal-oxide layer with an etching stop layer thereon is formed on the gate insulating layer. A surface treatment is performed on the patterned metal-oxide layer with use of the etching stop layer as a mask, such that a portion of the patterned metal-oxide layer uncovered by the etching stop layer has greater conductivity than conductivity of another portion of the patterned metal-oxide layer covered by the etching stop layer. The patterned metal-oxide layer treated by the surface treatment includes a pixel electrode and an active layer located above the gate. A source and a drain are then formed. And then, an organic electro-luminescence layer and a top electrode are sequentially formed on the pixel electrode. | 12-27-2012 |
20120329190 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND MANUFACTURING METHOD THEREOF - An organic light emitting diode display includes a substrate. A control electrode is on the substrate. A gate insulating film covers the control electrode. An input electrode and an output electrode are on the gate insulating film and face each other. An oxide semiconductor is between the input electrode and the output electrode and on the control electrode. A pixel electrode is on portions of the edges of the output electrode and is electrically connected. An organic light emitting member is on the pixel electrode. A common electrode is on the organic light emitting member. The oxide semiconductor and the pixel electrode may be of the same layer. | 12-27-2012 |
20130005063 | SUBSTRATE TREATING DEVICE USING PLASMA AND MANUFACTURING METHOD OF ORGANIC LIGHT EMITTING DIODE DISPLAY USING THE SUBSTRATE TREATING DEVICE - A substrate treatment device includes a substrate processing chamber where a plasma treatment process is performed, a rib structure provided in an upper portion of the substrate processing chamber, the rib structure having a form of a three-dimensional structure bent along at least one direction, dielectric material structures, each having an edge fixed to the rib structure; and an antenna provided in a portion of each of dielectric materials facing an exterior of the substrate treatment device, the antenna being connected with a high frequency power source and forming an inductive electromagnetic field in the substrate processing chamber. | 01-03-2013 |
20130005064 | Organic Electroluminescent Display Device And Method For Fabricating The Same - A method for fabricating an organic electroluminescent display device is provided. The organic electroluminescent display device includes a light-emitting cell having a cathode electrode, an anode electrode and an organic layer interposed therebetween; wherein the cathode electrode is electrically connected to a contact electrode via a contact hole; wherein the contact electrode has acid-resistance with respect to an etchant used in patterning the cathode electrode. | 01-03-2013 |
20130017636 | COMPOSITION FOR REMOVING A PHOTORESIST AND METHOD OF MANUFACTURING A THIN-FILM TRANSISTOR SUBSTRATE USING THE COMPOSITIONAANM KIM; Bong-KyunAACI Hwaseong-siAACO KRAAGP KIM; Bong-Kyun Hwaseong-si KRAANM CHOI; Shin-IlAACI Hwaseong-siAACO KRAAGP CHOI; Shin-Il Hwaseong-si KRAANM PARK; Hong-SickAACI Suwon-siAACO KRAAGP PARK; Hong-Sick Suwon-si KRAANM LEE; Wang-WooAACI Suwon-siAACO KRAAGP LEE; Wang-Woo Suwon-si KRAANM JANG; Seok-JunAACI Asan-siAACO KRAAGP JANG; Seok-Jun Asan-si KRAANM KIM; Byung-UkAACI Hwaseong-siAACO KRAAGP KIM; Byung-Uk Hwaseong-si KRAANM PARK; Sun-JooAACI Pyeongtaek-siAACO KRAAGP PARK; Sun-Joo Pyeongtaek-si KRAANM YOON; Suk-IlAACI Suwon-siAACO KRAAGP YOON; Suk-Il Suwon-si KRAANM JEONG; Jong-HyunAACI SeoulAACO KRAAGP JEONG; Jong-Hyun Seoul KRAANM HUR; Soon-BeomAACI Anyang-siAACO KRAAGP HUR; Soon-Beom Anyang-si KR - A composition for removing a photoresist, the composition including about 1% by weight to about 10% by weight of tetramethyl ammonium hydroxide (“TMAH”), about 1% by weight to about 10% by weight of an alkanol amine, about 50% by weight to about 70% by weight of a glycol ether compound, about 0.01% by weight to about 1% by weight of a triazole compound, about 20% by weight to about 40% by weight of a polar solvent, and water, each based on a total weight of the composition. | 01-17-2013 |
20130017637 | METHOD FOR FORMING PATTERN AND METHOD FOR MANUFACTURING DISPLAY DEVICE BY USING THE SAMEAANM JEON; Woo-SeokAACI SeoulAACO KRAAGP JEON; Woo-Seok Seoul KRAANM LEE; Jong KwangAACI DaejeonAACO KRAAGP LEE; Jong Kwang Daejeon KRAANM JU; Jin HoAACI SeoulAACO KRAAGP JU; Jin Ho Seoul KRAANM KANG; MinAACI SeoulAACO KRAAGP KANG; Min Seoul KRAANM KANG; HoonAACI Suwon-siAACO KRAAGP KANG; Hoon Suwon-si KRAANM SHIM; Seung BoAACI Asan-siAACO KRAAGP SHIM; Seung Bo Asan-si KRAANM PARK; Gwui-HyunAACI Osan-siAACO KRAAGP PARK; Gwui-Hyun Osan-si KRAANM KIM; Bong-YeonAACI SeoulAACO KRAAGP KIM; Bong-Yeon Seoul KR - A method for forming a fine exposure pattern where a width and an interval of the pattern are each 1CD, by first exposing a photoresist by using an exposure mask where an interval ratio of a light shielding part and a light transmission part is 2CD:1CD to 4CD:1CD, and then second exposing the photoresist after the exposure mask is shifted at a predetermined interval, or second exposing the photoresist by using an exposure mask formed at a position where a light transmission part is shifted at a predetermined interval, and developing the photoresist, such that it is possible to form a display device having a pixel electrode including a plurality of fine branch electrodes having a smaller width and interval than a resolution of an exposure apparatus. | 01-17-2013 |
20130029446 | METHOD OF FORMING TRANSPARENT ELECTRODE AND FABRICATING ARRAY SUBSTRATE FOR LIQUID CRYSTAL DISPLAY DEVICE - A method of forming a transparent electrode includes forming a first transparent conductive material layer on a base; performing a plasma process on the first transparent conductive material layer such that the upper portion of the first transparent conductive material layer is changed into semitransparent; forming a second transparent conductive material layer on the first transparent conductive material layer; patterning the second transparent conductive material layer and the first transparent conductive material layer; and annealing the patterned second transparent conductive material layer and the patterned first transparent conductive material layer such that the upper portion of the first transparent conductive material layer is changed into transparent. | 01-31-2013 |
20130029447 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, DELAMINATION METHOD, AND TRANSFERRING METHOD - A substrate and a delamination film are separated by a physical means, or a mechanical means in a state where a metal film formed over a substrate, and a delamination layer comprising an oxide film including the metal and a film comprising silicon, which is formed over the metal film, are provided. Specifically, a TFT obtained by forming an oxide layer including the metal over a metal film; crystallizing the oxide layer by heat treatment; and performing delamination in a layer of the oxide layer or at both of the interface of the oxide layer is formed. | 01-31-2013 |
20130034923 | ETCHING COMPOSITION, METHOD OF FORMING A METAL PATTERN USING THE ETCHING COMPOSITION, AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE - An etching composition, a method of forming a metal pattern using the etching composition, and a method of manufacturing a display substrate are disclosed. The etching composition includes about 0.1% by weight to about 25% by weight of ammonium persulfate, about 0.1% by weight to about 25% by weight of an organic acid, about 0.01% by weight to about 5% by weight of a chelating agent, about 0.01% by weight to about 5% by weight of a fluoride compound, about 0.01% by weight to about 5% by weight of a chloride compound, about 0.01% by weight to about 2% by weight of an azole-based compound and a remainder of water. Thus, a copper layer may be stably etched to improve a reliability of manufacturing the metal pattern and the display substrate. | 02-07-2013 |
20130040410 | PHOTORESIST COMPOSITION, METHOD OF FORMING A PATTERN USING THE SAME, AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE - A photoresist composition, a method of forming a pattern using the photoresist composition, and a method of manufacturing a display substrate are disclosed. A photoresist composition includes an alkali-soluble resin, a quinone diazide-based compound, a multivalent phenol-based compound, and a solvent. Therefore, photosensitivity for light having a wavelength in a range of about 392 nm to about 417 nm may be improved, and reliability of forming a photo pattern and a thin film pattern using the photoresist composition may be improved. | 02-14-2013 |
20130045554 | DISPLAY DEVICE AND ELECTRONIC APPLIANCE INCLUDING THE DISPLAY DEVICE - To provide a display device which has a narrower frame region and which includes a driver circuit not affected by variation in transistor characteristics. A base substrate having an insulating surface to which a single-crystal semiconductor layer is attached is divided into strips and is used for a driver circuit of a display device. Alternatively, a base substrate having an insulating surface to which a plurality of single-crystal semiconductor layers is attached is divided into strips and is used for a driver circuit of a display device. Accordingly, a driver circuit corresponding to a size of a display device can be used for the display device, and a display device which has a narrower frame region and which includes a driver circuit not affected by variation in transistor characteristics can be provided. | 02-21-2013 |
20130045555 | THIN FILM SEMICONDUCTOR DEVICE, DISPLAY DEVICE USING SUCH THIN FILM SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A thin film semiconductor device formed as integrated circuits on an insulating substrate with bottom gate type thin film transistors stacked with gate electrodes, a gate insulating film and a semiconductor thin film in the order from below upward. The gate electrodes comprise metallic materials with thickness less than 100 nm. The gate insulating film has a thickness thicker than the gate electrodes. The semiconductor thin film comprises polycrystalline silicon crystallized by a laser beam. By reducing thickness of metallic gate electrodes, thermal capacity becomes small and difference in thermal condition on the metallic gate electrodes and on the insulating substrate made of glass or the like becomes small. This invention relates to the task of uniforming and optimizing recrystallization by a laser anneal treatment provided for the semiconductor thin film which works as an active layer of the bottom gate type thin film transistors. | 02-21-2013 |
20130059405 | METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE - Provided is a method for manufacturing a light-emitting device in which an organic electroluminescent (EL) layer having an intended shape is formed. The method is, for manufacturing a light-emitting device ( | 03-07-2013 |
20130059406 | ORGANIC OPTOELECTRONIC DEVICE ELECTRODES WITH NANOTUBES - An electrode for use in an organic optoelectronic device is provided. The electrode includes a thin film of single-wall carbon nanotubes. The film may be deposited on a substrate of the device by using an elastomeric stamp. The film may be enhanced by spin-coating a smoothing layer on the film and/or doping the film to enhance conductivity. Electrodes according to the present invention may have conductivities, transparencies, and other features comparable to other materials typically used as electrodes in optoelectronic devices. | 03-07-2013 |
20130065338 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device and a method of its manufacture are provided, whereby manufacturing processes are simplified and display quality may be enhanced. The display device includes: an active layer of a thin film transistor (TFT), on a substrate and including a semiconducting material; a lower electrode of a capacitor, on the substrate, doped with ion impurities, and including a semiconducting material; a first insulating layer on the substrate to cover the active layer and the lower electrode; a gate electrode of the TFT, on the first insulating layer; a pixel electrode on the first insulating layer; an upper electrode of the capacitor, on the first insulating layer; source and drain electrodes of the TFT, electrically connected to the active layer; an organic layer on the pixel electrode and including an organic emission layer; and a counter electrode facing the pixel electrode, the organic layer between the counter electrode and the pixel electrode. | 03-14-2013 |
20130065339 | ARRAY SUBSTRATE FOR LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - A method of fabricating a liquid crystal display device includes: a first step of attaching a polarizing plate to an outer surface of a liquid crystal panel; a second step of attaching a tape carrier package (TCP) to the liquid crystal panel; a third step of coating a resin onto a rear surface of the TCP and a connection portion of the liquid crystal panel and the TCP; a fourth step of inspecting the TCP and the liquid crystal display panel; a fifth step of inserting the liquid crystal panel into a transferring means; a sixth step of transferring the transferring means; a seventh step of extracting the liquid crystal panel from the transferring means; a eighth step of attaching the TCP to a printed circuit board (PCB); a ninth step of inspecting the PCB, the TCP and the liquid crystal panel; and a tenth step of assembling the liquid crystal panel and a backlight unit with a plurality of frames. | 03-14-2013 |
20130071962 | Method of Manufacturing TFT Array Substrate and TFT Array Substrate - The invention discloses a method of manufacturing TFT array substrate and a TFT array substrate, wherein the manufacturing method comprises the following steps: sequentially depositing a metal film, a insulating layer, and a semiconductor layer, and manufacturing a gate line and a gate electrode using a composition method; depositing a insulating layer, and manufacturing a channel region protecting layer using the composition method; sequentially depositing a doped semiconductor layer and a metal layer; forming a source electrode, a drain electrode and a data line using the composition method; and cutting the doped semiconductor layer and the metal layer to form an energizing channel; and depositing an ITO layer, and forming a pixel electrode by the ITO layer using the composition method. Because four-composition technologies are used by the invention, the gate electrode, the gate line, and the active layer are manufactured by the single-composition technology, and the pixel electrode, the data line, the source electrode, the drain electrode, the channel and the like are directly formed by the completely developed photoetching or dry etching method; the manufacturing difficulty of the array substrate is greatly reduced; the production cost of the array substrate is reduced; and the production efficiency is increased. The TFT component formed by the array substrate is of back-channel protection type structure in favour of reduction of the off-state current of the component. | 03-21-2013 |
20130071963 | METHOD OF FABRICATING A THIN FILM TRANSISTOR AND METHOD OF FABRICATING AN ORGANIC LIGHT-EMITTING DISPLAY DEVICE - A thin film transistor fabrication method allows forming a first photoresist pattern on a triple layer of insulation, conductive and metal films opposite to a semiconductor pattern. A first metal pattern and a conductive pattern are formed through an etch process before forming source and drain regions through a first ion injection process. A second photoresist pattern with a narrower width than that of the first photoresist pattern is derived from the first photoresist pattern. The first metal pattern is reformed into a second metal pattern with a narrower width than that of the second photoresist pattern. A process is performed that includes removing the second photoresist pattern, forming LDD (Lightly Doped Drain) regions in the semiconductor pattern, and forming GOLDD (Gate Overlap LDD) regions in the semiconductor pattern. A second insulation film is formed before forming source and drain electrodes on the second insulation film. | 03-21-2013 |
20130078751 | DISPLAY SUBSTRATE AND METHOD OF FABRICATING THE SAME - A display substrate is provided that can prevent the opening of an upper conduction layer. The display substrate comprises a semiconductor layer pattern formed on a substrate, a data interconnection pattern formed on the semiconductor layer pattern, a protection layer formed on the substrate and the data interconnection pattern, contact holes formed on the substrate to expose at least a portion of an upper surface of the semiconductor pattern and at least a portion of an upper surface of the data interconnection pattern, and contact electrodes formed in the contact holes to be in contact with the exposed upper surfaces of the data interconnection pattern and the semiconductor layer pattern. | 03-28-2013 |
20130084663 | METHOD FOR FABRICATING PHOTO SPACER AND LIQUID CRYSTAL DISPLAY AND ARRAY SUBSTRATE - A method for fabricating a photo spacer and an array substrate having the photo spacer are provided. At least one exposure process, a developing process, and a baking process are performed to a photo-sensitive material layer formed a substrate to fabricate a photo spacer, wherein the at least one exposure process includes a back side exposure process. The substrate has a light transmitting region and a light shielding region so that the photo-sensitive material layer is defined into a first block and a second block after the back side exposure process. The developing process is performed to at least remove the second block. A front side exposure process is performed to the first block. The baking process is performed to cure the first block of the photo-sensitive material layer to form a photo spacer. | 04-04-2013 |
20130084664 | METHOD OF MANUFACTURING AN ORGANIC ELECTROLUMINESCENCE DISPLAY DEVICE - Provided is a method of manufacturing an organic electroluminescence display device which enables production of a high-resolution organic electroluminescence display device in which display failure is suppressed. The method of manufacturing an organic electroluminescence display device includes multiple organic electroluminescence elements each including an organic compound layer that includes at least an emission layer, the method including: forming the organic compound layer on a substrate; sequentially forming an intermediate layer and a resist layer on the organic compound layer; removing a part of the resist layer by a photolithography method; and selectively removing, by dry etching, the intermediate layer and the organic compound layer in a region in which the part of the resist layer is removed, the light shielding layer having a function of blocking light having a wavelength of | 04-04-2013 |
20130084665 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - To provide an input device including a display screen which has an image display function and a text information input function by using a display portion in which a pixel includes an optical sensor. An optical sensor is provided in each pixel of the display portion in order to detect position information. A transistor of a pixel circuit in the display portion and the optical sensor are formed using a single crystal semiconductor layer. By using the single crystal semiconductor layer, there is no variation in characteristics among pixels, and position detection with high accuracy is realized. Moreover, the display portion is formed using a substrate which is a light-transmitting substrate such as a glass substrate provided with a single crystal semiconductor layer separated from a single crystal semiconductor substrate. | 04-04-2013 |
20130089940 | METHOD OF MANUFACTURING DISPLAY UNIT - A method of manufacturing a display unit includes: forming, on a substrate, a thin-film transistor having an oxide semiconductor layer; and forming, above the thin-film transistor, a display region that includes a plurality of display elements. The oxide semiconductor layer is formed using a sputtering method in which a target and the substrate are opposed to each other. The target is made of an oxide semiconductor and includes a plurality of divided portions that are jointed in a planar form. A spacing interval between two joints that are formed by the plurality of divided portions and are side-by-side with one another of the target is equal to or less than a width of a luminance distribution arising in the display region in a direction substantially orthogonal to the joints. | 04-11-2013 |
20130095587 | METHODS FOR MANUFACTURING THIN FILM TRANSISTOR AND DISPLAY DEVICE - The present invention provides a method for manufacturing a highly reliable semiconductor device with a small amount of leakage current. In a method for manufacturing a thin film transistor, etching is conducted using a resist mask to form a back channel portion in the thin film transistor, the resist mask is removed, a part of the back channel is etched to remove etching residue and the like left over the back channel portion, whereby leakage current caused by the residue and the like can be reduced. The etching step of the back channel portion can be conducted by dry etching using non-bias. | 04-18-2013 |
20130095588 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a pixel portion having a first thin film transistor and a driver circuit having a second thin film transistor. Each of the first thin film transistor and the second thin film transistor includes a gate electrode layer, a gate insulating layer, a semiconductor layer, a source electrode layer, and a drain electrode layer. Each of the layers of the first thin film transistor has a light-transmitting property. Materials of the gate electrode layer, the source electrode layer and the drain electrode layer of the first thin film transistor are different from those of the second transistor, and each of the resistances of the second thin film transistor is lower than that of the first thin film transistor. | 04-18-2013 |
20130095589 | ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - In an array substrate capable of improving the quality of displayed images and a method for manufacturing the array substrate, the array substrate includes a base substrate, a first conductive pattern including a gate line and a first light-blocking pattern, a semiconductor layer overlapping the light-blocking pattern, a second conductive pattern including a data line and a storage line overlapping the first light-blocking pattern, and a pixel electrode overlapping the storage line to form a storage capacitor. The first conductive pattern may further include a second light-blocking pattern overlapping the semiconductor layer which is formed under the data line. The first and second light-blocking patterns block light proceeding toward the semiconductor layer formed under the storage line and under the data line, respectively, so that the semiconductor layer may be prevented from being excited by light energy. | 04-18-2013 |
20130095590 | LIQUID CRYSTAL DISPLAY AND METHOD OF FABRICATING THE SAME TO HAVE TFT'S WITH PIXEL ELECTRODES INTEGRALLY EXTENDING FROM ONE OF THE SOURCE/DRAIN ELECTRODES - A liquid crystal display (LCD) includes thin film transistors (TFTs) each having spaced apart source/drain electrodes and an oxide-type semiconductive film disposed over and between the source/drain electrodes to define an active layer. Each of the source/drain electrodes includes a portion of a subdivided transparent conductive layer where one subdivision of the transparent conductive layer continues from within its one of the source/drain electrodes to define an optically exposed pixel-electrode that is reliably connected integrally to the one source/drain electrode. Mass production costs can be reduced and production reliability increased because a fewer number of photolithographic masks can be used to form the TFTs. | 04-18-2013 |
20130109117 | Methods of Forming Organic Light Emitting Structures and Methods of Manufacturing Organic Light Emitting Display Devices | 05-02-2013 |
20130109118 | METHOD OF MANUFACTURING ORGANIC ELECTROLUMINESCENCE DISPLAY DEVICE | 05-02-2013 |
20130109119 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME | 05-02-2013 |
20130109120 | ARRAY SUBSTRATE FOR LUQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME | 05-02-2013 |
20130115726 | CRYSTALLIZATION APPARATUS, CRYSTALLIZATION METHOD, ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - A crystallization apparatus for crystallizing a semiconductor layer formed on a substrate, the crystallization apparatus including: a laser generator, which generates a laser beam, and a stage on which the substrate is mounted, where the semiconductor layer is divided into a plurality of crystallization areas and a plurality of non-crystallization areas, and the laser beam is radiated onto the crystallization areas a plurality of times to crystallize the crystallization areas, where the laser beam is radiated onto different positions of the same crystallization area a plurality of times. | 05-09-2013 |
20130115727 | ETCHING COMPOSITION AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE USING THE SYSTEM - An etching composition and a method of manufacturing a display substrate using the etching composition are disclosed. The etching composition includes phosphoric acid (H | 05-09-2013 |
20130122623 | METHOD OF MANUFACTURING OPTICAL SEMICONDUCTOR DEVICE - A method of manufacturing an optical semiconductor device includes: forming first and second optical semiconductor elements separated from each other by a separation groove on a semiconductor substrate; forming first and second electrodes containing Pt on top surfaces of the first and second optical semiconductor elements, respectively; forming a third electrode electrically connected to the first and second electrodes and preventing the third electrode from being formed in the separation groove; forming first and second Au plated layers on the first and second electrodes, respectively, by electrolytic plating, using the third electrode as a power supply layer; forming a resist covering the first and second Au plated layers by photolithography; and etching the third electrode, using the resist as a mask, to electrically separate the first electrode from the second electrode. | 05-16-2013 |
20130122624 | THIN FILM TRANSISTOR LIQUID CRYSTAL DISPLAY ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - A TFT LCD array substrate and a manufacturing method thereof. The manufacturing method includes the steps of: forming a thin film transistor on a substrate to form a gate line and a gate electrode connected with the gate line on the substrate; forming a gate insulating layer and a semiconductor layer on the gate electrode; forming an ohmic contact layer on the semiconductor layer; forming a transparent pixel electrode layer and a source/drain electrode metal layer in sequence on the resultant substrate, wherein the transparent pixel electrode layer is electrically insulated from the gate line and the gate electrode, and the transparent pixel electrode layer forms an ohmic contact with two sides of the semiconductor layer via the ohmic contact layer; and performing masking and etching with a gray tone mask with respect to the resultant substrate to form a transparent pixel electrode, a source/drain electrode and a data line simultaneously. | 05-16-2013 |
20130130421 | Method of Manufacturing Oxide Thin Film Transistor and Display Device - A method of manufacturing oxide thin film transistor and display device are provided. In the method of manufacturing an oxide thin film transistor, the method includes: forming an active layer of an oxide semiconductor on a substrate, and performing surface treatment with plasma for the active layer to permeate oxygen into the active layer. | 05-23-2013 |
20130137204 | CRYSTALLIZATION APPARATUS, CRYSTALLIZING METHOD, AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - A crystallization apparatus for crystallizing a semiconductor layer formed on a substrate. The crystallization apparatus includes a laser generator, which generates a laser beam, an optical device for changing a path of the laser beam emitted from the laser generating device, and a stage on which the substrate is arranged, wherein the optical device changes the path of the laser beam by rotating with respect to a constant axis, and the stage is moved so that the laser beam having the changed path is irradiated to a constant region on the semiconductor layer. | 05-30-2013 |
20130157398 | DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - To achieve promotion of stability of operational function of display device and enlargement of design margin in circuit design, in a display device including a pixel portion having a semiconductor element and a plurality of pixels provided with pixel electrodes connected to the semiconductor element on a substrate, the semiconductor element includes a photosensitive organic resin film as an interlayer insulating film, an inner wall face of a first opening portion provided at the photosensitive organic resin film is covered by a second insulating nitride film, a second opening portion provided at an inorganic insulating film is provided on an inner side of the first opening portion, the semiconductor and a wiring are connected through the first opening portion and the second opening portion and the pixel electrode is provided at a layer on a lower side of an activation layer. | 06-20-2013 |
20130157399 | DOUBLE GATE THIN-FILM TRANSISTOR AND OLED DISPLAY APPARATUS INCLUDING THE SAME - A double gate thin-film transistor (TFT), and an organic light-emitting diode (OLED) display apparatus including the double gate TFT, includes a double gate thin-film transistor (TFT) including: a first gate electrode on a substrate; an active layer on the first gate electrode; source and drain electrodes on the active layer; a planarization layer on the substrate and the source and drain electrodes, and having an opening corresponding to the active layer; and a second gate electrode in the opening. | 06-20-2013 |
20130164871 | ARRAY SUBSTRATE FOR IN-PLANE SWITCHING MODE LIQUID CRYSTAL DISPLAY DEVICE HAVING DOUBLE-LAYERED METAL PATTERNS AND METHOD OF FABRICATING THE SAME - An array substrate of an in-plane switching liquid crystal display device includes, among other features, a gate electrode and a gate line having a first double-layered structure consisting of a first barrier layer and a first low resistance metallic layer; a data line defining a pixel region with the gate line, the data line having a second double-layered structure consisting of a second barrier layer and a second low resistance metallic layer; a plurality of common electrodes disposed in a direction opposite to an adjacent gate line; a thin film transistor (TFT) near a crossing of the gate and data lines, each of the source and drain electrodes of the TFT having the same double-layered structure as the data line; and a plurality of pixel electrodes arranged in an alternating pattern with the common electrodes and disposed in the direction opposite the adjacent gate line. | 06-27-2013 |
20130164872 | METHOD OF FABRICATING ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE - An organic light emitting diode display device and a method of manufacturing thereof, the device including a substrate, the substrate including a pixel part and a circuit part; a first semiconductor layer and a second semiconductor layer on the pixel part of the substrate; a gate insulating layer on an entire surface of the substrate; gate electrodes on the gate insulating layer, the gate electrodes corresponding to the first semiconductor layer and the second semiconductor layer, respectively; source/drain electrodes insulated from the gate electrodes, the source/drain electrodes being connected to the first and second semiconductor layers, respectively; a first electrode connected to the source/drain electrodes of the first semiconductor layer; an organic layer on the first electrode; a second layer on the organic layer; and a metal catalyst layer under the first semiconductor layer. | 06-27-2013 |
20130203196 | MANUFACTURE METHOD OF THIN FILM TRANSISTOR ARRAY SUBSTRATE - Disclosed is a manufacture method of the thin film transistor array, comprising depositing a first transparent conductive layer and a first metal layer to perform patterning for forming a common electrode, a gate electrode and a transparent electrode array; depositing an insulating layer, an active layer, an ohmic contact layer and a second metal layer to perform patterning for forming a source and a drain; depositing a second transparent conductive layer to perform patterning for forming a source contact layer, a drain contact layer and a pixel electrode array connected to the drain contact layer. The present invention simplifies the manufacture process, saves the cost and time for the manufacture. | 08-08-2013 |
20130217164 | ORGANIC LAYER DEPOSITION APPARATUS, AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY APPARATUS USING THE SAME - An organic layer deposition apparatus and a method of manufacturing an organic light emitting display apparatus by using the organic layer deposition apparatus. An organic layer deposition apparatus includes: a carrier including a chuck on which a substrate is mounted to form an organic layer; a scanning unit including a deposition unit for discharging a deposition raw material, and a patterning slit sheet having a plurality of patterning slits, the patterning slit sheet being smaller than the substrate in at least one of a first direction or a second direction perpendicular to the first direction; and a chamber accommodating the carrier and the scanning unit, the scanning unit being arranged to be spaced apart from the substrate and movable relative to the carrier. | 08-22-2013 |
20130217165 | METHOD FOR MANUFACTURING AN ORGANIC LIGHT EMITTING DIODE DISPLAY - Making an OLED display, includes forming a first storage plate and a gate insulating layer covering the first storage plate on a substrate; sequentially forming a second storage plate covering the first storage plate and a capacitor intermediate in the gate insulating layer; forming a first doping region by injecting an impurity to a part that is not covered by the capacitor intermediate in the first storage plate; forming an interlayer insulating layer having a capacitor opening exposing the capacitor intermediate, and a plurality of erosion preventing layers on an edge of the capacitor intermediate toward the first doping region in the capacitor opening; removing the capacitor intermediate including the erosion preventing layer and a lower region of the erosion preventing layer, and injecting an impurity in the first storage plate through the second storage plate to form a second doping region contacting the first doping region. | 08-22-2013 |
20130224894 | METHOD FOR MANUFACTURING DISPLAY ELEMENT, MANUFACTURING APPARATUS OF DISPLAY ELEMENT AND DISPLAY DEVICE - A manufacturing apparatus of display element which forms highly reliable drive circuits or thin-film transistors on a flexible substrate, a manufacturing method, and a highly reliable display element are provided. A display element ( | 08-29-2013 |
20130236998 | Method for Manufacturing Array Substrate of Transflective Liquid Crystal Display - A method for manufacturing an array substrate of a transflective LCD includes: ( | 09-12-2013 |
20130244362 | DISPLAY, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC UNIT - A display includes: a first light-emitting device disposed in a first region on a substrate and including a transfer organic layer; a second light-emitting device disposed in a second region adjacent to the first region on the substrate and not including a transfer organic layer; and a level difference provided between the first region and the second region, and being large enough to inhibit transfer of the transfer organic layer to the second region when the transfer organic layer is formed in the first region. | 09-19-2013 |
20130260497 | METHOD FOR MANUFACTURING A THIN FILM TRANSISTOR ARRAY PANEL - A method for manufacturing a thin film transistor array panel according to an exemplary embodiment of the present invention includes, forming a gate electrode, a gate insulating layer, and an oxide semiconductor layer on a substrate, first heat treating the substrate comprising the oxide semiconductor layer, forming a source electrode and a drain electrode on the oxide semiconductor layer, the source and drain electrodes facing each other, and forming a passivation layer on the source electrode and the drain electrode. The first heat treating is performed at more than 1 atmosphere and at most 50 or less atmospheres. | 10-03-2013 |
20130260498 | THIN FILM TRANSISTOR HAVING SEMICONDUCTOR WITH DIFFERENT CRYSTALLINITIES AND MANUFACTURING METHOD THEREOF - A thin film transistor, a display device, and a manufacturing method thereof. The thin film transistor includes a control electrode, a semiconductor overlapping the control electrode, and an input electrode and an output electrode disposed on or under the semiconductor and opposite to each other. The semiconductor includes a first portion disposed between the input electrode and the output electrode and having a first crystallinity, and a second portion connected with the first portion, which overlaps the input electrode or the output electrode, and having a second crystallinity. The first crystallinity is higher than the second crystallinity. | 10-03-2013 |
20130260499 | VAPOR DEPOSITION APPARATUS, VAPOR DEPOSITION METHOD, AND METHOD FOR MANUFACTURING ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE - A vapor deposition device ( | 10-03-2013 |
20130267053 | METHOD FOR MANUFACTURING MOTHER SUBSTRATE AND ARRAY SUBSTRATE - The present invention relates to a method for manufacturing a mother substrate, the mother substrate comprising: a substrate comprising at least one display region and pre-cutting regions in a periphery of the display region, wherein the display region comprises gate scanning lines and data scanning lines, the pre-cutting regions comprise a gate-line connecting line and a data-line connecting line electrically connected to each other, and the gate-line connecting line is electrically connected to all of the gate scanning lines in the display region, and the data-line connecting line is electrically connected to all of the data scanning lines in the display region substrate. | 10-10-2013 |
20130280838 | METHOD FOR FABRICATING ARRAY SUBSTRATE AND FABRICATION APPARATUS USED THEREFOR - Provided is a method for fabricating an array substrate. The method for fabricating the array substrate includes forming a semiconductor layer on a substrate, forming a gate electrode which is insulated from the semiconductor layer, forming source and drain electrodes which are insulated from the gate electrode and connected to the semiconductor layer, and forming a pixel electrode connected to the drain electrode. Here, at least one of the forming of the gate electrode, the forming of the source and drain electrodes, and the forming of the pixel electrode includes forming a conductive layer on the substrate, cooling the substrate on which the conductive layer is formed to a temperature of no greater than about 0° C., heating the cooled substrate, and patterning the conductive layer. | 10-24-2013 |
20130280839 | METHOD FOR FORMING VAPOR DEPOSITION FILM, AND METHOD FOR PRODUCING DISPLAY DEVICE - On a surface of a substrate ( | 10-24-2013 |
20130280840 | VAPOR DEPOSITION DEVICE, VAPOR DEPOSITION METHOD, AND METHOD OF MANUFACTURING ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE - A vapor deposition device ( | 10-24-2013 |
20130288412 | HIGH YIELD SUBSTRATE ASSEMBLY - High yield substrate assembly. In accordance with a first method embodiment, a plurality of piggyback substrates are attached to a carrier substrate. The edges of the plurality of the piggyback substrates are bonded to one another. The plurality of piggyback substrates are removed from the carrier substrate to form a substrate assembly. The substrate assembly is processed to produce a plurality of integrated circuit devices on the substrate assembly. The processing may use manufacturing equipment designed to process wafers larger than individual instances of the plurality of piggyback substrates. | 10-31-2013 |
20130288413 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device including a substrate; at least one thin-film transistor (TFT) formed on the substrate; a planarizing layer covering the TFT; a pixel electrode, which is formed on the planarizing layer and is connected to the TFT; a protective layer surrounding an edge of the pixel electrode; a pixel defining layer (PDL), which has an overhang (OH) structure protruding more than the top surface of the protective layer, covers the protective layer and the edge of the pixel electrode, and exposes a portion of the pixel electrode surrounded by the protective layer; a counter electrode facing the pixel electrode; and an intermediate layer, which is interposed between the pixel electrode and the counter electrode and includes a light-emitting layer and at least one organic layer, where the thickness of the intermediate layer is greater than the thickness of the protective layer. | 10-31-2013 |
20130288414 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display apparatus and a method of manufacturing the same, the apparatus including: a substrate; a first electrode formed on the substrate; an intermediate layer formed on the first electrode, including an organic emissive layer; a second electrode formed on the intermediate layer; and an insulating member interposed between the intermediate layer and the second electrode, on an edge of the first electrode. | 10-31-2013 |
20130295705 | METHOD FOR FORMING DEPOSITION FILM, AND METHOD FOR PRODUCING DISPLAY DEVICE - A masking film ( | 11-07-2013 |
20130302928 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An organic light emitting diode (OLED) display device and a method of fabricating the same are disclosed. The OLED display device includes a plurality of scan lines, a plurality of data lines, and a plurality of pixels disposed in a region in which the scan lines cross the data lines, where each pixel of the plurality of pixels includes: a switching transistor including a first gate electrode, a first semiconductor layer disposed over the first gate electrode, a first gate insulating layer interposed between the first gate electrode and the first semiconductor layer, a first source electrode and a first drain electrode, a driving transistor including a second semiconductor layer, a second gate electrode disposed over the second semiconductor layer, a second gate insulating layer interposed between the second gate electrode and the second semiconductor layer, a second source electrode and a second drain electrode, and an organic light emitting diode electrically connected with the second source and second drain electrodes of the driving transistor, where the first and second semiconductor layers are formed of the same material, and from the same processing. | 11-14-2013 |
20130302929 | DISPLAY DEVICE AND METHOD FOR FABRICATING SAME - In a display region of an active matrix substrate, an interlayer insulating film made of a photosensitive organic insulating film, an insulating film different from the interlayer insulating film, and a plurality of pixel electrodes formed on a surface of the interlayer insulating film are provided. In a non-display region of the active matrix substrate, a lead line extended from the display region is formed. In a formation region for a sealing member, the interlayer insulating film is removed, the insulating film is provided to cover part of the lead line, and the sealing member is formed directly on a surface of the insulating film. | 11-14-2013 |
20130330868 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - The OLED display device includes a substrate, a first electrode located on the substrate, a pixel defining layer located on the first electrode to expose a part of the first electrode, a fluorine-based polymer layer located on the pixel defining layer, an organic layer located on the first electrode, and a second electrode located on the entire surface of the substrate. The method of manufacturing the OLED display device includes forming a first electrode on a substrate, forming a pixel defining layer on the first electrode, forming a fluorine-based polymer layer on the pixel defining layer, patterning the fluorine-based polymer layer and the pixel defining layer by laser ablation to open a part of the first electrode, forming an organic layer on the opened first electrode, and forming a second electrode on the entire surface of the substrate. | 12-12-2013 |
20130337596 | Back Channel Etch Metal-Oxide Thin Film Transistor and Process - A method is provided for fabricating an organic light emitting diode (OLED) display. The method includes forming a thin film transistor (TFT) substrate including a first metal layer and a second metal layer. The method also includes depositing a first passivation layer over the second metal layer, and forming a third metal layer over a channel region and a storage capacitor region. The third metal layer is configured to connect to a first portion of the second metal layer that is configured to connect to the first metal layer in a first through-hole through a gate insulator and the first passivation layer. The method further includes depositing a second passivation layer over the third metal layer, and forming an anode layer over the second passivation layer. The anode is configured to connect to a second portion of the third metal layer that is configured to connect to the second metal layer in a second through-hole of the first passivation layer and the second passivation layer. | 12-19-2013 |
20130337597 | VAPOR DEPOSITION DEVICE, VAPOR DEPOSITION METHOD, AND ORGANIC EL DISPLAY DEVICE - A vapor deposition device includes a vapor deposition source ( | 12-19-2013 |
20140004640 | METHOD FOR MANUFACTURING ORGANIC ELECTROLUMINESCENT DISPLAY APPARATUS | 01-02-2014 |
20140004641 | VAPOR DEPOSITION DEVICE, VAPOR DEPOSITION METHOD, AND METHOD FOR PRODUCING ORGANIC EL DISPLAY DEVICE | 01-02-2014 |
20140017838 | METHOD OF MANUFACTURING AN ARRAY SUBSTRATE - The present invention provides an array substrate comprising: a substrate, having a thin film transistor (TFT) formed thereupon, the TFT having a gate electrode, a source electrode and a drain electrode; a first metal layer, formed on the substrate, and comprising a gate line and the gate electrode of the TFT; a first insulating layer, covering the first metal layer and the substrate; a semiconductor layer, an ohmic contact layer, and a second metal layer, which are sequentially formed on the first insulating layer; a second insulating layer, covering the semiconductor layer, the ohmic contact layer, and the second metal layer; a pixel electrode, provided on the second insulating layer and is connected to the drain electrode. The second metal layer further comprises an etch-blocking pattern in the peripheral area of the pixel electrode within the overlapping region between the pixel electrode and the first metal layer. | 01-16-2014 |
20140024157 | THIN FILM TRANSISTOR DISPLAY PANEL AND MANUFACTURING METHOD THEREOF - A thin film transistor display panel includes a substrate, a gate wire on the substrate and including a gate line and a gate electrode; a gate insulating layer on the gate wire; a semiconductor layer on the gate insulating layer; a data wire including a source electrode on the semiconductor layer, a drain electrode opposing the source electrode with respect to the gate electrode, and a data line; a passivation layer on the data wire having a contact hole exposing the drain electrode; and a pixel electrode on the passivation layer and connected to the drain electrode through the contact hole. The gate wire has a first region and second region where the gate line and the gate electrode are positioned, respectively. The thickness of the gate wire in the first region is greater than the thickness of the gate wire in the second region. | 01-23-2014 |
20140030833 | METHOD FOR PRODUCING SUBSTRATE HAVING CONCAVITY AND CONVEXITY STRUCTURE AND METHOD FOR PRODUCING ORGANIC EL ELEMENT USING THE SAME - A method for producing a substrate having an irregular concave and convex surface for scattering light includes: manufacturing a substrate having the irregular concave and convex surface; irradiating the concave and convex surface of the manufactured substrate with inspection light tom a direction oblique to a normal direction and detecting returning light of the inspection light returned from the concave and convex surface by a light-receiving element provided in the normal direction of the concave and convex surface; and judging unevenness of luminance of the concave and convex surface by an image processing device based on light intensity of the returning light received. An organic EL element which includes a diffraction-grating substrate having an irregular concave and convex surface is produced with a high throughput. | 01-30-2014 |
20140038330 | DEVICE FOR FORMING THIN LAYER AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DIODE DISPLAY USING THE SAME - Provided are a device for forming a thin layer that may be applied to mass production and a method of manufacturing a display using the same. The device for forming a thin layer includes a vessel that has a material for forming a thin layer, a multi-nozzle part that is on a substrate and that is connected to the vessel to receive the material for forming the thin layer, which multi-nozzle part includes a plurality of nozzles arranged in parallel at a distance from each other, and a pulse generator that applies a switching voltage to one of the substrate and the multi-nozzle part such that an instantaneous potential difference between at least one of the plurality of nozzles and the substrate is provided, and such that a discharge of the material for forming the thin layer is controlled. | 02-06-2014 |
20140038331 | SOLID STATE LIGHTING DEVICE WITH DIFFERENT ILLUMINATION PARAMETERS AT DIFFERENT REGIONS OF AN EMITTER ARRAY - Solid state lighting (SSL) devices and methods of manufacturing such devices. One embodiment of an SSL device comprises a support and an emitter array having a plurality of SSL emitters carried by the support. The emitter array has a central region and a peripheral region outward from the central region. Individual SSL emitters in both the central and the peripheral regions have a primary emission direction along which an intensity of light from the SSL emitters is highest, and the primary emission direction of the SSL emitters in the central region is at least substantially the same direction as the primary emission direction of the SSL emitters in the peripheral region. Additionally, a first coverage area ratio of the SSL emitters in the central region is different than a second coverage area ratio of the SSL emitters in the peripheral region. | 02-06-2014 |
20140038332 | BACK PANEL FOR FLAT PANEL DISPLAY APPARATUS, FLAT PANEL DISPLAY APPARATUS COMPRISING THE SAME, AND METHOD OF MANUFACTURING THE BACK PANEL - A back panel for a flat panel display apparatus includes: a pixel electrode disposed on a substrate; a first gate electrode layer of a thin-film transistor (TFT) disposed on the substrate; a second gate electrode layer disposed on the first gate electrode layer and including a semiconductor material; a third gate electrode layer disposed on the second gate electrode layer and including a metal material; a first insulating layer disposed on the third gate electrode layer; an active layer disposed on the first insulating layer and including a transparent conductive oxide semiconductor; a second insulating layer disposed on the active layer; source and drain electrodes disposed connected to the active layer through the second insulating layer; and a third insulating layer covering the source and drain electrodes. The first gate electrode layer and the pixel electrode include a transparent conductive oxide. | 02-06-2014 |
20140057378 | ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY APPARATUS - An organic light emitting display (OLED) apparatus and a method of manufacturing the same, the OLED apparatus including: a substrate; an active layer formed on the substrate; a gate electrode insulated from the active layer; source and drain electrodes insulated from the gate electrode and electrically connected to the active layer; a pixel defining layer formed on the source and drain electrodes, having an aperture to expose one of the source and drain electrodes; an intermediate layer formed in the aperture and comprising an organic light emitting layer; and a facing electrode which is formed on the intermediate layer. One of the source and drain electrodes has an extension that operates as a pixel electrode. The aperture exposes the extended portion. The intermediate layer is formed on the extended portion. | 02-27-2014 |
20140065747 | METHOD AND DEVICE FOR PRODUCING SOLAR CELL STRINGS - A method and an apparatus for producing solar cell strings by connecting at least two solar cells by a least one conductor ribbon of a first length, wherein the solar cells are respectively spaced from one another at a string cell spacing(s), until a desired number of solar cells for producing a first solar cell string is connected together, connecting a further solar cell with a last solar cell of the first solar string by at least another conductor ribbon which is longer than the at least one conductor ribbon, wherein the second solar cell is spaced from the last solar cell at a greater spacing than the string cell spacing(s) and wherein the second solar cell forms the first solar cell for a second solar string, and separating the at least another conductor ribbon for decoupling the first solar cell string. | 03-06-2014 |
20140065748 | METHOD FOR MANUFACTURING DISTRIBUTED FEEDBACK LASER ARRAY - A method for manufacturing a distributed feedback laser array includes: forming a bottom separate confinement layer on a substrate; forming a quantum-well layer on the bottom separate confinement layer; forming a selective-area epitaxial dielectric mask pattern on the quantum-well layer; forming a top separate confinement layer on the quantum-well layer through selective-area epitaxial growth using the selective-area epitaxial dielectric mask pattern, the top separate confinement layer having different thicknesses for different laser units; removing the selective-area epitaxial dielectric mask pattern; forming an optical grating on the top separate confinement layer; and growing a contact layer on the optical grating. The present disclosure achieves different emission wavelengths for different laser units without significantly affect emission performance of the quantum-well material. | 03-06-2014 |
20140065749 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A thin film transistor array panel includes: a substrate including a display area and a drive region in which a driving chip for transmitting a driving signal to the pixels is located; a gate line in the display area; a storage electrode line; a gate driving pad coupled to the driving chip; a gate insulating layer; a first semiconductor layer on the gate insulating layer and overlapped with a gate electrode protruding from the gate line; a second semiconductor layer formed on the gate insulating layer and overlapped with a sustain electrode protruding from the storage electrode line; a data line crossing the gate line in an insulated manner and a drain electrode separated from the data line; and a pixel electrode coupled to the drain electrode, and the drain electrode comprises a drain bar facing the source electrode, and a drain extender overlapped with the second semiconductor layer. | 03-06-2014 |
20140073074 | DISTORTION TOLERANT PIXEL DESIGN - A method of manufacturing a flexible display is provided, which includes depositing a first layer comprising a plurality of thin film transistors (TFTs) on a flexible substrate and depositing a second layer comprising a plurality of pixel electrodes above the first layer with each pixel electrode connected to a respective TFT via a respective via connector between the first and second layers. A display medium responsive to signals on the pixel electrode can be deposited on the second layer for displaying an image on the second layer. A third layer comprising colour filters for filtering an image displayed on the display medium can be aligned to the second layer. The third layer can be deposited and aligned on the second layer such that each colour filter is substantially aligned to a respective pixel electrode to compensate for distortions in the first layer caused by distortions in the flexible substrate. | 03-13-2014 |
20140080238 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND LIQUID CRYSTAL TELEVISION RECEIVER - At least one or more of a conductive layer which forms a wiring or an electrode and a pattern necessary for manufacturing a display panel such as a mask for forming a predetermined pattern is formed by a method capable of selectively forming a pattern to manufacture a liquid crystal display device. A droplet discharge method capable of forming a predetermined pattern by selectively discharging a droplet of a composition in accordance with a particular object is used as a method capable of selectively forming a pattern in forming a conductive layer, an insulating layer, or the like. | 03-20-2014 |
20140087504 | OLED DISPLAY WITH SPALLED SEMICONDUCTOR DRIVING CIRCUITRY AND OTHER INTEGRATED FUNCTIONS - Spalling is employed to generate a single crystalline semiconductor layer. Complementary metal oxide semiconductor (CMOS) logic and memory devices are formed on a single crystalline semiconductor substrate prior to spalling. Organic light emitting diode (OLED) driving circuitry, solar cells, sensors, batteries and the like can be formed prior to, or after, spalling. The spalled single crystalline semiconductor layer can be transferred to a substrate. OLED displays can be formed into the spalled single crystalline semiconductor layer to achieve a structure including an OLED display with semiconductor driving circuitry and other functions integrated on the single crystalline semiconductor layer. | 03-27-2014 |
20140087505 | Light-Emitting Diodes on Concave Texture Substrate - A semiconductor device having light-emitting diodes (LEDs) formed on a concave textured substrate is provided. A substrate is patterned and etched to form recesses. A separation layer is formed along the bottom of the recesses. An LED structure is formed along the sidewalls and, optionally, along the surface of the substrate between adjacent recesses. In these embodiments, the surface area of the LED structure is increased as compared to a planar surface. In another embodiment, the LED structure is formed within the recesses such that the bottom contact layer is non-conformal to the topology of the recesses. In these embodiments, the recesses in a silicon substrate result in a cubic structure in the bottom contact layer, such as an n-GaN layer, which has a non-polar characteristic and exhibits higher external quantum efficiency. | 03-27-2014 |
20140099743 | FLEXIBLE DISPLAY DEVICE MANUFACTURING METHOD - A flexible display device manufacturing method includes preparing a substrate assembly in which a flexible substrate is formed on a carrier substrate; piling up a plurality of the prepared substrate assemblies in a heating furnace in multi-stages; performing heat treatment by providing hot blast onto each of the piled substrate assemblies in a horizontal direction; forming a display unit on the flexible substrate of the heat-treated substrate assembly; and separating the flexible substrate and the carrier substrate from each other. According to the above-described manufacturing method, since warpage of a flexible substrate after a carrier substrate and the flexible substrate are separated from each other may be suppressed, a subsequent process may be appropriately performed, productivity may be improved, and damage of products caused while the flexible substrate is handled may be reduced. | 04-10-2014 |
20140106489 | METHOD OF MANUFACTURING A DISPLAY DEVICE - It is provided a method of manufacturing a display device for which the damage caused to the display panel due to processing at high temperatures is reduced. The method of manufacturing a display device includes: preparing a carrier substrate including a surface treated region; laying a mother substrate on the carrier substrate; progressing a process of forming a thin film on the mother substrate; and separating the carrier substrate from the mother substrate by using the surface treated region as an initial separation point. Bonding is formed between the carrier substrate and the mother substrate during forming the thin film over the areas that are not surface treated. The two substrates may be separated by disposing permeating oil on the surface treated region wherefrom oil permeates through the remaining regions by osmotic pressure. This way damage caused to the display panel during thin film processing is reduced. | 04-17-2014 |
20140106490 | DISPLAY DEVICE - A display device for improving an aperture ratio of the pixel is provided. In the display device, a transparent oxide layer, an insulating film, and a conductive layer are sequentially stacked on a pixel region on a substrate, the conductive layer has a gate electrode of a thin film transistor connected to a gate signal line, and a region of the transparent oxide layer other than at least a channel region portion directly below the gate electrode is converted into an electrically conductive region, and a source signal line, a source region portion of the thin film transistor connected to the source signal line, a pixel electrode, and a drain region portion of the thin film transistor connected to the pixel electrode are formed from the conductive region. | 04-17-2014 |
20140113395 | VAPOR DEPOSITION APPARATUS, METHOD OF FORMING THIN FILM BY USING VAPOR DEPOSITION APPARATUS, AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY APPARATUS - A vapor deposition apparatus for depositing a thin film on a substrate includes a cover having an accommodation portion and a communicated portion, which communicated portion is connected to the accommodation portion and faces a direction of the substrate, and includes a body in the accommodation portion, which body includes a first portion and a second portion. The first portion is disposed at a first location of the body and connected to a first injection portion for injecting a first material onto the substrate, the second portion is disposed at a second location of the body and connected to a second injection portion for injecting a second material onto the substrate, and the body rotates in at least one direction so that the first portion and the second portion are alternately connected to each other with respect to the communicated portion. | 04-24-2014 |
20140120644 | Method for Producing Organic Light-Emitting Diode Illuminating Device - A method for producing an OLED illuminating device includes steps of: (a) forming metal lines and power transmission lines on a substrate; (b) forming a patterned insulating layer to cover the metal lines and the power transmission lines; (c) forming a patterned first electrode layer on the insulating layer; (d) forming an organic light-emitting membrane structure on the first electrode layer; (e) forming a second electrode layer on the organic light-emitting membrane structure so that a plurality of luminescent pixels are formed; and (f) when one of the luminescent pixels is defective, cutting one of the power transmission lines that is connected to the defective one of the luminescent pixels using an energy beam. | 05-01-2014 |
20140127843 | APPARATUS FOR FORMING ORGANIC LAYER AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY USING THE SAME - An organic layer forming apparatus includes a donor film supply part configured to supply a donor film. The donor film includes a base substrate, a transfer layer disposed on the base substrate, and a protective film disposed on the transfer layer. The apparatus also includes a protective film withdrawal part configured to remove the protective film from the donor film, a transfer printing process part configured to transfer the transfer layer of the donor film onto a transfer substrate to form a first organic layer, a first deposition part configured to form a second organic layer on the transfer layer through a first deposition process, a second deposition part configured to form a third organic layer on the transfer layer through a second deposition process, and a donor film withdrawal part configured to withdraw the donor film. | 05-08-2014 |
20140127844 | MANUFACTURING METHOD OF ARRAY SUBSTRATE - A manufacturing method of an array substrate includes the following steps. A first conductive layer, a gate insulating layer, a semiconductor layer, an etching stop layer, and a first patterned photoresist are successively formed on a substrate. The etching stop layer and the semiconductor layer uncovered by the first patterned photoresist are then removed by a first etching process. A patterned gate insulating layer and a patterned etching stop layer are then formed through a second etching process. The first conductive layer uncovered by the patterned gate insulating layer is then removed to form a gate electrode. The semiconductor layer uncovered by the patterned etching stop layer is then removed to form a patterned semiconductor layer and partially expose the patterned gate insulating layer. | 05-08-2014 |
20140134772 | ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic electroluminescent (EL) display device and a method of manufacturing the same are provided. The organic electroluminescent display device includes a rear substrate, a organic EL portion formed on one surface of the rear substrate with a first electrode, an organic layer and a second electrode sequentially laminated. The front substrate is coupled to the rear substrate to seal an internal space in which the organic EL portion is accommodated, for isolating the organic EL portion from the outside. The front substrate further has a transparent moisture-absorbing layer coated on its internal surface. | 05-15-2014 |
20140141556 | UNIT MASK AND MASK ASSEMBLY - A unit mask is extended in a direction and is supported by a frame including an opening. The unit mask includes a first fixed part located in the opening and fixed to one surface of the frame disposed in the direction, a second fixed part spaced apart from the first fixed part and fixed to another surface of the frame disposed in the direction, and a mask part held by the first fixed part and the second fixed part between the first fixed part and the second fixed part. | 05-22-2014 |
20140141557 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND MANUFACTURING METHOD FOR THE SAME - An organic light emitting display device includes a substrate, a thin film transistor formed on the substrate and including an active layer, a gate electrode including a gate lower electrode and a gate upper electrode, a source electrode, and a drain electrode, an organic light emitting device electrically connected to the thin film transistor, wherein a pixel electrode formed of the same material as at least a part of the gate electrode in the same layer, an intermediate layer including a light emitting layer, and an opposed electrode arranged to face the pixel electrode are sequentially deposited. | 05-22-2014 |
20140154823 | MANUFACTURING METHOD OF TFT ARRAY SUBSTRATE - Embodiments of the invention provide a manufacturing method of a TFT array substrate. The TFT array substrate is formed to comprise a plurality of scanning lines, a plurality of data lines and a plurality of pixel units defined by intersecting these scanning lines and these data lines with each other. Each of the pixel units comprises a TFT and a pixel electrode. The TFT is formed to comprise a gate electrode, a gate insulating layer, a metal oxide semiconductor layer used as an active layer, an etch stopping layer formed on a portion of the surface of the metal oxide semiconductor layer, a source electrode and a drain electrode. In this method, the metal oxide semiconductor layer, the source electrode and the drain electrode are formed by a same patterning process. | 06-05-2014 |
20140154824 | METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY APPARATUS - A method of manufacturing an organic light emitting display apparatus includes preparing a substrate having a pixel electrode and a pixel defining layer exposing the pixel electrode, forming a hole injection layer (HIL) on the substrate to cover the pixel electrode and the pixel defining layer, forming a primer layer on the HIL, patterning the primer layer to leave a region corresponding to at least a portion of the pixel electrode, removing a portion of the HIL to expose an outer portion of the substrate, and forming an opposing electrode to cover the HIL and the outer portion of the substrate. | 06-05-2014 |
20140154825 | METHOD OF MANUFACTURING MASK SUBSTRATE AND METHOD OF MANUFACTURING ORGANIC ELECTROLUMINESCENT DISPLAY USING THE SAME - A first conductive member is positioned on a base substrate. A second conductive member is positioned on the first conductive member, the second conductive member being electrically coupled to the first conductive member, and having a resistivity higher than that of the first conductive member. A mask substrate is positioned on the second conductive member. A portion of the mask substrate that contacts the second conductive member is removed . | 06-05-2014 |
20140170791 | DISPENSER AND METHOD OF FABRICATING ORGANIC LIGHT EMITTING DISPLAY DEVICE USING THE SAME - A dispenser capable of forming a uniform material layer and a method of fabricating an organic light emitting display device using the same are disclosed. The dispenser includes a syringe including a coating material and provided with a nozzle for ejecting the coating material to a substrate and a syringe cap for controlling a coating amount from the nozzle, a pressing unit providing a pressure for ejecting the coating material, a transporting unit for moving the syringe above, and a cap-driving unit for driving the syringe cap to control the coating amount. | 06-19-2014 |
20140170792 | FORMING THIN FILM VERTICAL LIGHT EMITTING DIODES - A thin film vertical light emitting diode (VLED) structure and process are described. Features of the design include the following: bonding multiple smaller diameter LED wafers to a larger diameter carrier wafer, which reduces the per LED fabrication cost; using thin film techniques to metalize the anode and cathode and using respective annealing steps prior to photolithography patterning of LED structures; enabling the thin film process by semi-permanent bonding techniques which provide thermal and chemical stability, while allowing bond release at an opportune time by thermal, optical, or chemical means; using epitaxial substrate removal techniques to separate the entire LED film from its growth substrate; and patterning various vertical LED devices which can emit light from the n-type side (cathode), p-type side (anode), side wall, or a combination of the surfaces by using mirror layers and electrically conductive and optically transmissive layers. | 06-19-2014 |
20140179044 | METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DIODE DISPLAY - An OLED display includes a first polysilicon layer pattern on a substrate having a first gate electrode, a second gate electrode, and a first capacitor electrode, a gate insulating layer pattern, a second polysilicon layer pattern including a first active layer, a second active layer, and a capacitor polycrystalline dummy layer, a third amorphous silicon layer pattern including first source and drain resistant contact layers on a predetermined region of the first active layer, second source and drain resistant contact layers on a predetermined region of the second active layer, and a capacitor amorphous dummy layer on the capacitor polycrystalline dummy layer, and a data metal layer pattern including first source/drain electrodes, second source/drain electrodes, and a second capacitor electrode. | 06-26-2014 |
20140186982 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND MANUFACTURING METHOD THEREOF - An organic light emitting diode (OLED) display includes a display substrate, an encapsulation substrate facing the display substrate; a soft sealant disposed between the display substrate and the encapsulation substrate and adhering the display substrate and the encapsulation substrate to each other; and a brittle sealant connecting a side of the display substrate and a side of the encapsulation substrate. Therefore, the organic light emitting diode (OLED) display does not generate cracks on the attachment surface of the soft sealant and display substrate and encapsulation substrate because the soft sealant has a high fracture toughness even though a stress concentration phenomenon occurs on the attachment surface of the soft sealant, the display substrate and encapsulation substrate Therefore, it is possible to prevent the display substrate and encapsulation substrate from being easily broken because of the external impact or deformation thereof. | 07-03-2014 |
20140193934 | ORGANIC LIGHT EMITTING DISPLAY AND MANUFACTURING METHOD THEREOF - An organic light emitting display resulting in an improved aperture ratio and a manufacturing method thereof. The organic light emitting display that includes a plurality of pixels arranged between first and second substrates, each of said pixels includes a plurality of thin film transistors, an organic light emitting diode, and a capacitor. The thin film transistors and the organic light emitting diode are formed on the first substrate and the capacitor is formed on the second substrate, and the thin film transistors and the capacitor are electrically connected with each other upon the first substrate being bonded to the second substrate. | 07-10-2014 |
20140193935 | COLLECTIONS OF LATERALLY CRYSTALLIZED SEMICONDUCTOR ISLANDS FOR USE IN THIN FILM TRANSISTORS - Collections of laterally crystallized semiconductor islands for use in thin film transistors and systems and methods for making same are described. A display device includes a plurality of thin film transistors (TFTs) on a substrate, such that the TFTs are spaced apart from each other and each include a channel region that has a crystalline microstructure and a direction along which a channel current flows. The channel region of each of the TFTs contains a crystallographic grain that spans the length of that channel region along its channel direction. Each crystallographic grain in the channel region of each of the TFTs is physically disconnected from and crystallographically uncorrelated with each crystallographic grain in the channel region of each adjacent TFT. | 07-10-2014 |
20140206119 | METHOD FOR FABRICATING ORGANIC LIGHT EMITTING DISPLAY DEVICE AND INKJET PRINT DEVICE USED THEREIN - A method for fabricating an organic light emitting display device includes forming a first electrode on a substrate; forming a pixel-defining film having an opening exposing the first electrode; forming an ink non-reactive solvent portion by discharging of an ink non-reactive solvent at the opening and forming an organic light emitting layer by discharging an organic light emitting ink on the ink non-reactive solvent portion; and forming a second electrode on the organic light emitting layer. | 07-24-2014 |
20140220719 | Light Emitting Device and Manufacturing Method Thereof - Disclosed is a light emission element including, on a substrate having an insulative surface, a first electrode connected with a thin film transistor and an insulator covering the end of the first electrode, a layer containing an organic compound in contact with the first electrode, a second electrode in contact with the layer containing the organic compound. The first electrode has an inclined surface and the inclined surface reflects emitted light from the layer containing the organic compound. Further, a light absorbing multi-layered film absorbing external light is disposed on the portion of the first electrode covered with the insulator. The light absorbing multi-layered film comprising at least has a three-layered structure comprising a light transmitting film, a film partially absorbing light and a light transmitting film. | 08-07-2014 |
20140235003 | VAPOR DEPOSITION APPARATUS, DEPOSITION METHOD, AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS BY USING THE SAME - Provided is a vapor deposition apparatus including: a plasma generator configured to change at least a portion of a first raw material gas into a radical form; a corresponding surface corresponding to the plasma generator; a reaction space between the plasma generator and the corresponding surface; and an insulating member separated from, and surrounding the plasma generator. | 08-21-2014 |
20140256076 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A display device includes a substrate; a gate wire including a gate electrode and a first capacitor electrode formed on the substrate; a gate insulating layer formed on the gate wire; a semiconductor layer pattern formed on the gate insulating layer, and including an active region overlapping at least a part of the gate electrode and a capacitor region overlapping at least a part of the first capacitor electrode; an etching preventing layer formed on a part of the active region of the semiconductor layer pattern; and a data wire including a source electrode and a drain electrode formed over the active region of the semiconductor layer from over the etching preventing layer, and separated with the etching preventing layer therebetween, and a second capacitor electrode formed on the capacitor region of the semiconductor layer. | 09-11-2014 |
20140295598 | SEMICONDUCTOR LIGHT EMITTING ELEMENT FABRICATION METHOD - A method of fabricating a plurality of light emitting elements includes forming a nitride semiconductor layer on a growth substrate, the nitride semiconductor layer including at least an n-type nitride semiconductor layer, an active layer made of a nitride semiconductor, and a p-type nitride semiconductor layer stacked in this order; forming a p-electrode layer, the p-electrode layer including portions that correspond to the light emitting elements; forming a p-passivation layer that includes portions between the portions of the p-electrode layer formed on the upper surface of the nitride semiconductor layer; forming a seed layer on the p-electrode layer and the p-passivation layer; forming an insulating layer having portions formed on an upper surface of the seed layer; forming a plating layer on the seed layer; and forming a plating substrate by removing the insulating layer to form spaces between portions of the plating layer. | 10-02-2014 |
20140295599 | ETCHANT, DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE USING THE SAME - An etchant includes: 5 to 20 wt % of persulfate, 1 to 10 wt % of at least one compound of an inorganic acid, an inorganic acid salt, or a mixture thereof, 0.3 to 5 wt % of a cyclic amine compound, 1 to 10 wt % of at least one compound of an organic acid, an organic acid salt, or a mixture thereof, 0.1 to 5 wt % of p-toluenesulfonic acid, and water, based on the total weight of the etchant. A copper-titanium etchant further includes 0.01 to 2 wt % of a fluoride-containing compound. A method of forming a display device using the etchant, and a display device, are also disclosed. | 10-02-2014 |
20140315339 | METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY - A manufacturing method of an organic light emitting display includes preparing a substrate including a cathode line, forming an anode electrode on the substrate, the anode electrode being insulated from the cathode line, forming an insulating layer having a first opening exposing a portion of the cathode line and a second opening exposing a portion of the anode electrode on the substrate, forming an organic layer on the insulating layer, forming an electrical connection portion electrically connected to the cathode line by supplying a conductive solution that dissolves the organic layer in an area of the organic layer corresponding to the first opening, and forming a cathode electrode overlapping with the electrical connection portion. | 10-23-2014 |
20140322848 | THERMAL TRANSFER METHOD AND METHOD OF MANUFACTURING AN ORGANIC LIGHT EMITTING DISPLAY DEVICE USING THE SAME - A thermal transfer method includes a step of forming a donor member having a base layer, a light-to-heat conversion layer disposed on the base layer, an intermediate layer disposed on the light-to-heat conversion layer, an organic transfer layer disposed on the intermediate layer, and a first protecting film disposed over the base layer and contacting at least one edge of the base layer, irradiating a first laser onto the donor member to form a preliminary organic layer on the display substrate, forming a pressing member having a second protecting film and a third protecting film disposed over the second protecting film and contacting at least one edge of the second protecting film, disposing the display substrate within a space formed by the second protecting film and the third protecting film, and irradiating a second laser onto the pressing member to change the preliminary organic layer to an organic layer. | 10-30-2014 |
20140322849 | VAPOR DEPOSITION APPARATUS, DEPOSITION METHOD USING THE SAME, AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - A vapor deposition apparatus for forming a deposition layer on a substrate includes a supply unit that is supplied with a first raw gas to form the deposition layer and an auxiliary gas, wherein the auxiliary gas does not constitute a raw material to form the deposition layer, a reaction space that is connected to the supply unit to be supplied with the first raw gas and the auxiliary gas, a plasma generator in the reaction space to convert at least a portion of the first raw gas into a radical form, and a first injection portion that is connected to the reaction space and that supplies at least a radical material of the first raw gas toward the substrate. | 10-30-2014 |
20140329349 | ORGANIC LAYER DEPOSITION APPARATUS, AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS BY USING THE SAME - An organic layer deposition apparatus includes a conveyer unit including a transfer unit, a first conveyer unit, and a second conveyer unit; and a deposition unit including one or more organic layer deposition assemblies for depositing an organic layer on a substrate attached to the transfer unit. Each of the one or more organic layer deposition assemblies includes: a plurality of deposition sources for discharging a deposition material; a deposition source nozzle unit including a plurality of deposition source nozzles; a patterning slit sheet including a plurality of patterning slits; and a plurality of source shutters separated from the plurality of deposition sources, respectively, and blocking a deposition material that is vaporized in each of the plurality of deposition sources. The plurality of source shutters move in different directions, thereby blocking or allowing to pass the deposition material. | 11-06-2014 |
20140342481 | ORGANIC LAYER DEPOSITION APPARATUS AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS USING THE SAME - An organic layer deposition apparatus and a method of manufacturing an organic light-emitting display device by using the apparatus. In particular, an organic layer deposition apparatus that is more easily manufactured and is suitable for use in mass production of large substrates while performing high-definition patterning thereon, as well as a method of manufacturing an organic light-emitting display device by using such an apparatus. | 11-20-2014 |
20140342482 | METHOD OF AND APPARATUS FOR FABRICATING ORGANIC ELECTROLUMINESCENCE DISPLAY DEVICE - A method of fabricating an organic electroluminescence display device includes providing a substrate including a plurality of pixel regions, first electrodes, and a partition wall, the pixel regions including two pixel columns, providing a mask including openings and first inclined surfaces, the openings being at positions corresponding to the two pixel columns, each of the first inclined surfaces being inclined toward one of the openings and including a portion extending to a region between the two pixel columns, positioning the mask such that each of the openings faces a portion of one of the pixel regions, dropping a solution containing an organic electroluminescence material onto the first inclined surfaces such that the solution is supplied onto the first electrodes through the openings to coat the first electrodes, evaporating solvent from the solution to form an organic electroluminescence layer, and forming a second electrode on the organic electroluminescence layer. | 11-20-2014 |
20140342483 | FABRICATION METHOD OF A PIXEL STRUCTURE OF AN ELECTROLUMINESCENT DISPLAY PANEL - A fabrication method of a pixel structure of an electroluminescent display panel includes the following steps. A substrate is provided. A first anode, a second anode and a third anode are formed in a first sub-pixel region, a second sub-pixel region and a third sub-pixel region respectively. A first organic light-emitting layer is formed in the first sub-pixel region by using a first fine metal mask. A second organic light-emitting layer is formed in the second sub-pixel region and the third sub-pixel region by using a second fine metal mask. A first cathode, a second cathode and a third cathode are formed in the first sub-pixel region, the second sub-pixel region, and the third sub-pixel region, respectively. The first micro cavity in the first sub-pixel region, the second micro cavity in the second sub-pixel region and the third micro cavity have different cavity lengths. | 11-20-2014 |
20140349428 | SUBSTRATE MOVING UNIT FOR DEPOSITION, DEPOSITION APPARATUS INCLUDING THE SAME, METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS BY USING THE DEPOSITION APPARATUS, AND ORGANIC LIGHT-EMITTING DISPLAY APPARATUS MANUFACTURED BY USING THE METHOD - Provided are a substrate moving unit for use with a deposition apparatus that allows a deposition material to be precisely deposited on a target site of a substrate. The substrate moving unit includes an electrostatic chuck having a first surface on which a substrate is fixable and a magnetic force applying unit disposed on a second surface of the electrostatic chuck. A deposition apparatus including the substrate moving unit, a method of manufacturing an organic light-emitting display apparatus, and an organic light-emitting display apparatus manufactured by using the method are also presented. | 11-27-2014 |
20140349429 | METHOD FOR MANUFACTURING A DISPLAY UNIT - A method for manufacturing a display unit is provided, and the method includes forming a first insulating film, forming a plurality of first electrodes on the first insulating film, forming a second insulating film on the first electrodes, forming a plurality of openings corresponding to the first electrodes, forming a plurality of organic layers formed in a shape of a stripe having notch parts, forming a second electrode on the organic layer having the notch parts is formed, and forming a protective film on the second electrode. | 11-27-2014 |
20140356996 | DONOR SUBSTRATE, METHOD FOR FABRICATING THE DONOR SUBSTRATE, AND METHOD FOR FORMING TRANSFER PATTERN USING THE DONOR SUBSTRATE - A donor substrate may include a base layer, a light-to-heat conversion layer disposed on the base layer, a buffer layer disposed on the light-to-heat conversion layer and including a composite layer of titanium dioxide and polytetrafluoroethylene, and a transfer layer disposed on the buffer layer. The buffer layer may be disposed between the transfer layer and the light-to-heat conversion layer. The buffer layer may be cleaned by incident light to preserve or improve its hydrophobicity. Accordingly, the buffer layer can be easily separated from the transfer layer. Advantageously, when (a portion of) the transfer layer is transferred onto a target substrate, unwanted material transfer may be prevented. | 12-04-2014 |
20140356997 | DONOR SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF FORMING TRANSFER PATTERN USING THE SAME - A donor substrate includes a base layer, a light-to-heat conversion layer disposed on the base layer, a metal particle layer disposed on the base layer and which discharges static electricity, and a transfer layer disposed on the light-to-heat conversion layer. | 12-04-2014 |
20140356998 | DONOR SUBSTRATE AND METHOD FOR FORMING TRANSFER PATTERN USING THE SAME - A donor substrate includes a base layer, a light-to-heat conversion layer disposed on the base layer, a buffer layer disposed on the light-to-heat conversion layer and a transfer layer disposed on the buffer layer. The buffer layer includes a cross-linked polymer, a spacer polymer bonded to the cross-linked polymer, and a perfluoroalkyl alcohol group bonded to the spacer polymer. | 12-04-2014 |
20140356999 | METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY APPARATUS - A method of manufacturing an organic light emitting display apparatus, the method includes loading a substrate on a moving unit, determining an angle formed between a side of the substrate and an opening in a patterning slit sheet, rotating the patterning slit sheet by two X motors so that the side of the substrate and the opening in a patterning slit sheet extend along the same direction and forming a layer on the substrate while conveying the substrate on the moving unit in the first direction in a chamber. The patterning slit sheet moves along a direction perpendicular to the first direction during the forming the layer on the substrate so that a deposition layer having a linear pattern that extends along the first direction is formed on the substrate. | 12-04-2014 |
20140357000 | DONOR SUBSTRATE AND METHOD OF FORMING TRANSFER PATTERN USING THE SAME - A donor substrate includes a base substrate; a light reflection layer on the base substrate and partially overlapping the base substrate; a light-to-heat conversion layer on the base substrate, and including a combination layer including an insulating material and a first metal material; and a transfer layer on the light-to-heat conversion layer. A ratio of the first metal material in the combination layer to the insulating material in the combination layer increases as a distance from the base substrate increases along a thickness direction of the light-to-heat conversion layer. | 12-04-2014 |
20140357001 | ORGANIC LAYER DEPOSITION APPARATUS AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS USING THE SAME - An organic layer deposition apparatus includes a conveyer unit and a deposition unit that has one or more organic layer deposition assemblies configured to deposit an organic layer on a moving substrate. The conveyer unit includes a moving unit configured to move a substrate fixed thereto, a first conveyer unit configured to move the moving unit in a first direction during which an organic material is deposited on the substrate fixed to the moving unit, and a second conveyer unit configured to move the moving unit in a second direction opposite to the first direction after deposition is completed and the substrate is separated from the moving unit. The first conveyer unit and the second conveyer unit are configured to move through the deposition unit. | 12-04-2014 |
20140357002 | THIN FILM DEPOSITION APPARATUS AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS USING THE SAME - A method of manufacturing an organic light-emitting display apparatus includes: forming light-emitting regions on a substrate; forming an organic light-emitting layer on the light-emitting regions; forming a counter electrode on the organic light-emitting layer; and forming an auxiliary electrode electrically connected to the counter electrode. A thickness of the auxiliary electrode is different from a thickness of the counter electrode. Formation of the counter electrode and formation of the auxiliary electrode are achieved via a small mask scanning (SMS) deposition method using the same mask. | 12-04-2014 |
20140357003 | METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY APPARATUS - A method of manufacturing an organic light emitting display apparatus is presented. The method includes providing a device substrate on which a first electrode and a pixel definition layer covering a portion of the first electrode are formed, forming a master substrate on which a transfer mask is patterned to mirror positions of the pixel definition layer, coupling the transfer mask to the pixel definition layer, forming an organic material layer on the exposed portion of the first electrode using the transfer mask as a protection layer, and removing the transfer mask. The transfer mask may replace a deposition metal mask. | 12-04-2014 |
20140357004 | METHOD OF FABRICATING A DISPLAY DEVICE WITH STEP CONFIGURATION IN THE INSULATING LAYER - A display device includes: a substrate; a plurality of light-emission elements arranged, on the substrate, in a first direction and a second direction intersecting each other, each of the light-emission elements having a first electrode layer, an organic layer including a luminous layer, and a second electrode layer which are laminated in that order; and a separation section disposed, on the substrate, between the light-emission elements adjacent to each other in the first direction, the separation section having two or more pairs of steps. The first electrode layers in the light-emission elements are separated from each other, and the organic layers as well as the second electrode layers in the light-emission elements adjacent to each other in the first direction are separated from each other by the steps included in the separation section. | 12-04-2014 |
20140363911 | METHOD FOR PRODUCING ORGANIC EL DISPLAY PANEL - A manufacturing method of an organic EL display panel includes: preparing G, R, and B inks that each include a solvent and respectively include G, R, and B organic light-emitting materials differing from each other in terms of light-emitting wavelength; applying the G ink to G subpixel regions on a substrate; applying the R ink to R subpixel regions; and applying the B ink to B subpixel regions. The R and B subpixel regions are each adjacent to a corresponding one of the G subpixel regions on both sides thereof. The G ink has a lower viscosity than the R and B inks. After application of the R and B inks is started, application of the G ink is started. | 12-11-2014 |
20140370631 | REMOVAL OF 3D SEMICONDUCTOR STRUCTURES BY DRY ETCHING - Various embodiments include methods of fabricating a semiconductor device that include providing a plurality of nanostructures extending away from a support, forming a flowable material layer between the nanostructures, forming a patterned mask over a first portion of the flowable material and the first portion of the plurality of nanostructures, such that a second portion of the flowable material and a second portion of the plurality of nanostructures are not located under the patterned mask and etching the second portion of the flowable material and the second portion of the plurality of nanostructures to remove the second portion of the flowable material and the second portion of the plurality of nanostructures to leave the first portion of the flowable material and the first portion of the plurality of nanostructures unetched. | 12-18-2014 |
20140370632 | TFT AND LCD PANEL AND METHOD FOR MANUFACTURING THE SAME - The present invention discloses a TFT, an LCD panel and method for manufacturing the same. In the LCD panel, a transparent conducting layer forms a first electrode of a TFT and a second electrode of a TFT directly, and the transparent conducting layer also serves as a connecting line between a TFT and a data line and between a TFT and an LC capacitor. So it is not necessary to form a via hole over the TFT to link the TFT and the transparent conducting layer. In this way, an area of a pixel electrode can be further extended, and the aperture rate of an LCD panel can be also increased, raising a transmittance of light from light sources passing through the pixel electrode In this way, not only a design in pixels becomes more flexible but also the aperture rate of an LCD panel becomes higher. | 12-18-2014 |
20140377898 | ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE ORGANIC LIGHT EMITTING DISPLAY APPARATUS - An organic light emitting display apparatus includes a substrate; a thin film transistor which is disposed over the substrate; a first electrode which is disposed over the substrate and electrically connected to the thin film transistor; a passivation layer which covers the thin film transistor and contacts a predetermined region of an upper surface of the first electrode; an intermediate layer which is disposed over the first electrode, includes an organic emission layer, and contacts a predetermined region of the passivation layer; and a second electrode which is disposed over the intermediate layer. | 12-25-2014 |
20150011033 | MASK ASSEMBLY AND METHOD OF FABRICATING ORGANIC LIGHT EMITTING DISPLAY DEVICE USING THE SAME - A mask assembly and a method of fabricating an organic light emitting display device using the same are provided. The mask assembly includes: a mask frame including a window therein; and a mask which is disposed on the window and fixed to the mask frame, wherein the mask includes a plurality of open parts and a plurality of blocked parts which extend in a column direction. Each open part and each blocked part may alternately be arranged in a row direction. Each open part may include a plurality of pixel openings and a plurality of pixel connection openings, which are alternately arranged in the column direction, and a maximum width of the pixel opening may be larger than a maximum width of the pixel connection opening. | 01-08-2015 |
20150011034 | Display Device - A manufacturing method of a display device having an array substrate includes the steps of forming a projection of an organic material in a pixel on the array substrate by patterning a photosensitive material or by inkjet, forming a TFT on the array substrate, wherein a source electrode of the TFT is formed to extend on at least part of the upper surface of the projection, forming an inorganic passivation layer over the TFT and over at least part of the upper surface of the projection, forming an organic passivation layer over the inorganic passivation layer, forming an upper insulating layer over at least part of the organic passivation layer, forming a contact hole in the inorganic passivation layer and the upper insulation layer over the upper surface of the projection, and forming a pixel electrode on the upper insulation layer which contacts the source electrode. | 01-08-2015 |
20150024528 | APPARATUS AND METHOD FOR MANUFACTURING ORGANIC LIGHT-EMITTING DIODE DISPLAY - Provided are an apparatus for manufacturing an OLED display and a method of manufacturing OLED display. According to another aspect of the present invention, there is provided the method of manufacturing an OLED display which includes placing a substrate having rows and columns of pixels through on a stage, ejecting organic light-emitting ink to the pixels through on the substrate by using a print head placed above the stage, and sequentially covering pixels through coated with the organic light-emitting ink with a cover plate placed above the stage. | 01-22-2015 |
20150024529 | DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - A display apparatus includes a base substrate, a data line to transmit a data signal, a gate line disposed on the base substrate and insulated from the data line, and a pixel electrically connected to the gate line and/or the data line via a thin film transistor. At least one of the data line and the gate line includes a lower conductive layer and an upper conductive layer. The lower conductive layer includes a zinc oxide doped with a doping material. The upper conductive layer is disposed on the lower conductive layer and includes a copper, and the upper conductive layer includes crystals in which growth directions are dispersed by the doping material. | 01-22-2015 |
20150024530 | METHOD OF MANUFACTURING AN OXIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A DISPLAY DEVICE HAVING THE SAME - Disclosed is a method of manufacturing an oxide semiconductor device, including: forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode; forming an active pattern on the gate insulating layer; forming a first mask pattern on the gate insulating layer and the active pattern; forming an insulating interlayer on the gate insulating layer, the active pattern, and the first mask pattern; forming a second mask pattern on the insulating interlayer, the second mask pattern comprising an opening that exposes a region where the first mask pattern is formed; forming contact holes exposing portions of the active pattern by patterning the insulating interlayer using the first mask pattern and the second mask pattern; and forming a source electrode and a drain electrode on the gate insulating layer by filling the contact holes, the drain electrode spaced apart from the source electrode. | 01-22-2015 |
20150031155 | DEPOSITION APPARATUS AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY APPARATUS BY USING THE SAME - A deposition apparatus includes a stage and a deposition module. The stage holds a substrate. The deposition module faces the substrate. The stage relatively moves in a direction relative to the deposition module. The deposition module includes a first feeding unit and a first light exposure unit. The first feeding unit sprays a first raw material toward the substrate. The first light exposure unit is disposed on at least one side of the first feeding unit and provides light to the at least one raw material sprayed on the substrate. | 01-29-2015 |
20150044800 | DEPOSITION APPARATUS, DEPOSITION METHOD USING THE SAME, AND MANUFACTURING METHOD OF ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - A deposition method using a deposition apparatus includes: depositing a first deposition layer on substrates in first process chambers of a first deposition cluster; transferring a substrate of the substrates in one of the first process chambers into a first transfer chamber of the first deposition cluster, which is connected to each of the first process chambers; transferring the substrate within the first transfer chamber of the first deposition cluster into a connection chamber, which is connected to the first transfer chamber and first and second gas supply lines; supplying a gas into the connection chamber through the second gas supply line to change an inside pressure of the connection chamber from a preset first pressure into a preset second pressure, which is different from an atmospheric pressure; and transferring the substrate within the connection chamber into a second transfer chamber of a second deposition cluster. | 02-12-2015 |
20150050766 | METHOD FOR PREVENTING SHORT CIRCUIT BETWEEN METAL WIRES IN ORGANNIC LIGHT EMITTING DIODE DISPLAY DEVICE - Disclosed is a method for preventing a short circuit between metal wires in an organic light emitting diode display device. The method includes: forming an inorganic layer on a substrate; forming an opening in the inorganic layer for exposing a part of the substrate; forming a metal layer on the inorganic layer, the metal layer including two metal wires respectively positioned at two sides of the opening; forming an organic layer on the two metal wires of the metal layer; and forming an indium tin oxide layer on the organic layer. The present invention can ensure that the short circuit does not occur between the metal wires by forming the opening in the inorganic layer. | 02-19-2015 |
20150050767 | EVAPORATION MASK AND METHOD OF MANUFACTURING DISPLAY UNIT - An evaporation mask includes: a mask body including a pattern region configured of a plurality of passage holes; and an adjusting frame configured to hold the mask body and having a mechanism capable of adjusting positions of the passage holes on the mask body. The adjusting frame has a frame-like base material, and a movable member that is provided along one or more sides of the base material to be bonded with an outer edge of the mask body, and at least a part of which is deformable on the base material. One or a plurality of slits are provided at a selective region of the movable member. | 02-19-2015 |
20150064825 | DISPLAY APPARATUS MANUFACTURING METHOD - A thin film encapsulation manufacturing apparatus includes a first cluster configured to form a first inorganic layer on a first substrate, on which an emission unit is formed, by a sputtering process; a second cluster configured to form a first organic layer on the first inorganic layer on the first substrate conveyed from the first cluster by an organic deposition process; a first connection module configured to connect the first cluster and the second cluster, configured to convey the first substrate on which the first inorganic layer is formed from the first cluster to the second cluster, and configured to cool the first substrate in a non-contact manner; and a third cluster configured to form a second inorganic layer on the first organic layer on the first substrate conveyed from the second cluster by a chemical vapor deposition (CVD) process or a plasma enhanced chemical vapor deposition (PECVD) process. | 03-05-2015 |
20150064826 | LIGHT-SCATTERING SUBSTRATE, METHOD OF MANUFACTURING THE SAME, ORGANIC LIGHT-EMITTING DISPLAY DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE ORGANIC LIGHT-EMITTING DISPLAY DEVICE - A light-scattering substrate which can be thinned and has improved thermal resistance, a method of manufacturing the same, an organic light-emitting display device including the same, and a method of manufacturing the organic light-emitting display device are disclosed. The light-scattering substrate includes a light-scattering layer composed of a plurality of metal nanoparticles which are attached to at least a surface of a substrate. The metal nanoparticles are formed by agglomeration of a metal on the substrate, and show a surface plasmon phenomenon. | 03-05-2015 |
20150079711 | METHOD FOR FORMING THIN FILM AND METHOD FOR FABRICATING ORGANIC LIGHT-EMITTING DIODE (OLED) DISPLAY USING THE SAME - A method for forming a thin film for fabricating an organic light-emitting diode (OLED) display is disclosed. In one aspect, the method includes forming a plurality of shadow masks on a substrate. The substrate is then bent to form a predetermined curvature in the substrate. A deposition source is placed at a position having an equal angle with respect to central and peripheral portions of the substrate. The method also includes depositing a deposition material from the deposition source on the substrate and the shadow masks to form a thin film. | 03-19-2015 |
20150079712 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME - An organic light emitting diode display includes a substrate, first electrodes patterned on the substrate, pixel defining layers on the substrate to separate the first electrodes corresponding to pixel units, light emitting layers on the first electrodes and separated corresponding to the pixel units, and a second electrode on the light emitting layers, wherein the pixel defining layers have pores. | 03-19-2015 |
20150093845 | METHOD OF MANUFACTURING ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE - A method of manufacturing an organic electroluminescent display device of the invention includes the steps of: forming, on a mother substrate including display regions and terminal forming regions, an upper electrode in each of the display regions; and cutting the mother substrate along each border between the display regions to thereby divide the mother substrate into a plurality of individual pieces. The step of forming the upper electrode includes the step of depositing a material of the upper electrode in the display regions using a mask including a frame-shaped frame and stripe-shaped shielding portions that cover regions corresponding to the terminal forming regions. The shielding portion is fixed in a state where the shielding portion spans between facing sides of the frame and tension in one direction is applied, and extends only in the one direction inside an inner periphery of the frame in a plan view. | 04-02-2015 |
20150104893 | METHOD OF PRODUCING PHOTO-ALIGNMENT LAYER OF LIQUID CRYSTAL DISPLAY - A method of manufacturing a photo-alignment layer, includes: disposing a polymer material on a substrate; pre-baking the polymer material disposed on the substrate; irradiating a light to the pre-baked polymer material, to photo-align the pre-baked polymer material; and thermal-treating the irradiated pre-baked polymer material, to harden the irradiated pre-baked polymer material. The thermal-treating includes a first thermal-treatment, and a second thermal-treatment at a higher temperature than the first thermal-treatment. | 04-16-2015 |
20150104894 | LIGHT-EMITTING PANEL, MANUFACTURING METHOD OF LIGHT-EMITTING PANEL, AND FILM FORMING SYSTEM - A light-emitting panel includes: a substrate and a light-emitting functional multilayer formed on the substrate, wherein the light-emitting functional multilayer including a first functional layer and a second functional layer, a thickness of part of the first functional layer positioned in a first light-emitting region is smaller than a thickness of part of the first functional layer positioned in a second light-emitting region, a thickness of part of the second functional layer positioned in the first light-emitting region is greater than a thickness of part of the second functional layer positioned in the second light-emitting region, and when the light-emitting functional multilayer is viewed in a layering direction, the first light-emitting region and the second light-emitting region are adjacent or distant from each other in a direction perpendicular to the layering direction, and each include a plurality of pixels that are each composed of a plurality of adjacent sub-pixels. | 04-16-2015 |
20150111331 | DISPLAY PANEL APPARATUS AND METHOD OF FABRICATING DISPLAY PANEL APPARATUS - A method of fabricating a display panel apparatus, includes forming a TFT layer, forming a planarizing film, forming a lower electrode, an electrode plate, and an auxiliary electrode, forming banks, forming the organic EL layer, and forming an upper electrode. The electrode plate has an opening exposing a portion of a surface of the planarizing film. In at least one of the forming of the lower electrode, the electrode plate and the auxiliary electrode, and the forming of the banks, the opening of the electrode plate outgasses the planarizing film. The electrode plate has a power supply that receives current through the electrode plate. The opening extends in parallel with a side of the display near the opening. Current flowing between the power supply and a portion connecting the auxiliary electrode and the electrode plate flows along an extending direction of the opening. | 04-23-2015 |
20150118776 | ETCHING DEVICE USEFUL FOR MANUFACTURING A DISPLAY DEVICE - A manufacturing method of a display device includes: forming a thin film transistor on a substrate, forming a pixel electrode connected to the thin film transistor, and forming a common electrode insulated from the pixel electrode. At least one of forming the pixel electrode and forming the common electrode includes: forming an electrode layer on the substrate, coating a photoresist on the electrode layer to form a first electrode sub-layer on which the photoresist is coated and a second electrode sub-layer on which the photoresist is not coated, generating etching vapor by heating an etching solution in a double boiler, and etching the second electrode sub-layer by using the etching vapor. | 04-30-2015 |
20150118777 | Nano-structure semiconductor light emitting device - A method of manufacturing a light emitting device having a plurality of nano-light emitting structures is provided. The method comprises depositing a first conductivity-type semiconductor material on a substrate to form a base layer. A mask having a plurality of openings is formed on the base layer. The first conductivity-type nitride semiconductor material is deposited in the openings of the mask to form a plurality of nanocores having a main portion bounded by the mask and an exposed tip portion. A current blocking layer is deposited on the tip portion of the nanocores. A portion of the mask is removed to expose the main portion of the nanocore. An active material layer is deposited on the plurality of nanocores. A second conductivity-type nitride semiconductor layer is deposited on the active material layer. | 04-30-2015 |
20150140712 | ETCHANT AND METHOD FOR MANUFACTURING DISPLAY DEVICE USING THE SAME - An etchant includes, based on a total amount of the etchant, from about 0.5 to about 20 wt % of a persulfate, from about 0.01 to about 2 wt % of a fluorine compound, from about 1 to about 10 wt % of an inorganic acid, from about 0.5 to about 5 wt % of an azole compound, from about 0.1 to about 5 wt % of an electron-donating compound, from about 0.1 to about 5 wt % of a chlorine compound, from about 0.05 to about 3 wt % of a copper salt, from about 0.1 to about 10 wt % of an organic acid or an organic acid salt, and a remaining amount of water. | 05-21-2015 |
20150140713 | PEELING APPARATUS AND MANUFACTURING APPARATUS OF SEMICONDUCTOR DEVICE - To eliminate electric discharge when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element, a substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap between pressurization rollers. The film is attached to the element formation layer between the pressurization rollers, bent along a curved surface of the pressurization roller on a side of the pressurization rollers, and collected. Peeling is generated between the element formation layer and the peeling layer and the element formation layer is transferred to the film. Liquid is sequentially supplied by a nozzle to a gap between the element formation layer and the peeling layer, which is generated by peeling, so that electric charge generated on surfaces of the element formation layer and the peeling layer is diffused by the liquid. | 05-21-2015 |
20150147836 | COMPOSITION FOR CLEANING FLAT PANEL DISPLAY AND METHOD FOR MANUFACTURING DISPLAY DEVICE USING THE SAME - The disclosure provides a cleaning agent composition for a flat panel display device, including: polyaminocarboxylic acid; alkali base; a nonionic surfactant; and a fluoride component. The cleaning agent composition for the flat panel display device can effectively remove metal oxides and organic contaminants on the substrate without impairing a transparent conductive layer. | 05-28-2015 |
20150147837 | METHOD OF MANUFACTURING DISPLAY APPARATUS - A method of manufacturing a display device including providing a substrate, forming a semiconductor layer on the substrate, forming a first insulating layer on the semiconductor layer, forming a metal layer on the first insulating layer, forming a second insulating layer on the metal layer, forming an etching buffer layer on the second insulating layer, forming a photosensitive film pattern on the etching buffer layer, and etching the etching buffer layer and the first and second insulating layers to expose the semiconductor layer. | 05-28-2015 |
20150147838 | MANUFACTURING METHOD OF DISPLAY DEVICE - A manufacturing method of a display device of the invention includes a step of forming an organic layer in correspondence with respective pixels on a substrate having a display area and a non-display area, the step of forming the organic layer includes a step of depositing a material of the organic layer using a mask having a frame-like frame and a mask foil fixed to the frame, the mask foil has openings provided in an area corresponding to the display area and dummy holes provided along an outer periphery of the area corresponding to the display area in an area corresponding to the non-display area, and an area of a plan view shape of the dummy hole adjacent to a midpoint of a side of the outer periphery is larger than an area of a plan view shape of the dummy hole adjacent to a corner of the outer periphery. | 05-28-2015 |
20150311478 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND MANUFACTURING METHOD THEREOF - An organic light emitting diode display includes a substrate including a display region displaying an image and a peripheral region surrounding the display region, a plurality of pad wires formed in the peripheral region of the substrate, and a plurality of bumps formed between the plurality of pad wires. The organic light emitting diode display blocks or relieves impact which is generated when a temporary upper protective film is half-cut and applied to a plurality of pad wires or an insulating layer by forming a plurality of bumps between the plurality of pad wires, thus preventing a damage to the pad wires or the insulating layer. | 10-29-2015 |
20150325817 | APPARATUS AND METHOD FOR MANUFACTURING ORGANIC LIGHT EMITTING DIODE DISPLAY - An apparatus for manufacturing an organic light emitting diode display and a method for manufacturing an organic light emitting diode display using the same. The apparatus for manufacturing an organic light emitting diode display includes: a chamber; a stage which is disposed inside the chamber and on which an array substrate is seated; and a source portion to evaporate a first solvent in the chamber, such that the solvent condenses on the array substrate. | 11-12-2015 |
20150340548 | OPTIMISED METHOD FOR PRODUCING ELECTROLUMINESCENT NANOWIRES - A process for fabricating an array of nanowires on the surface of a substrate, the nanowires comprising a portion capable of emitting radiation under action of an electrical or optical control and at least partially connected to one another electrically via a conductive upper layer, comprises steps allowing a subset of defective nanowires to be identified among active nanowires, the steps comprising: producing a layer of negative photoresist sensitive to the emission wavelength, covering the array of the nanowires; activating the array of the nanowires under electrical control or optical control so the active nanowires emit the radiation, the radiation decreasing the solubility of the negative resist; developing the resist level with the defective nanowires, leaving zones made less soluble and encircling the active nanowires; and removing the conductive layer above the defective nanowires. A process for fabricating one or more light-emitting diodes using the process is provided. | 11-26-2015 |
20150340549 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING APPARATUS - A semiconductor light emitting device includes a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, a first internal electrode, a second internal electrode, an insulating part, and first and second pad electrodes. The active layer is disposed on a first portion of the first conductive semiconductor layer, and has the second conductive layer disposed thereon. The first internal electrode is disposed on a second portion of the first conductive semiconductor layer separate from the first portion. The second internal electrode is disposed on the second conductive semiconductor layer. The insulating part is disposed between the first and second internal electrodes, and the first and second pad electrodes are disposed on the insulating part to connect to a respective one of the first and second internal electrodes. | 11-26-2015 |
20150357571 | Photoresist Employing Photodimerization Chemistry and Method for Manufacturing Organic Light Emitting Diode Display Using the Same - A highly fluorinated photoresist employing a photodimerization chemistry and a method for manufacturing an organic light emitting diode display using the same. The photoresist includes a copolymer that is made from two different monomers. When the copolymer is used as a photoresist, the photoresist has the characteristic that it becomes insoluble when exposed to an ultraviolet light having a wavelength of 365 nm. | 12-10-2015 |
20150364685 | PROCESS FOR PATTERNING MATERIALS IN THIN-FILM DEVICES - A method for forming a device includes providing a substrate; depositing a single fluorinated photo-patternable layer over the substrate; forming a first and a second active layer over the substrate; and applying the photo-patternable layer to form a first pattern within the first active layer and a second, different pattern within the second active layer. Particular examples disclosed in the present disclosure can be employed to form thin film electronics devices, including OLED devices and TFTs with a reduced number of photolithographic steps. | 12-17-2015 |
20150372186 | METHOD FOR MANUFACTURING NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a method of manufacturing a nanostructure semiconductor light emitting device including providing a base layer formed of a first conductivity-type semiconductor, forming a mask including an etch stop layer on the base layer, forming a plurality of openings with regions of the base layer exposed therethrough, in the mask; forming a plurality of nanocores by growth of the first conductivity-type semiconductor on the exposed regions of the base layer to fill the plurality of openings, partially removing the mask using the etch stop layer to expose side portions of the plurality of nanocores, and sequentially growth of an active layer and a second conductivity-type semiconductor layer on surfaces of the plurality of nanocores. | 12-24-2015 |
20160006002 | ORGANIC ELECTRONIC DEVICES WITH MULTIPLE SOLUTION-PROCESSED LAYERS - A method for fabricating an organic light emitting device stack involves depositing a first conductive electrode layer over a substrate; depositing a first set of one or more organic layers, wherein at least one of the first set of organic layers is a first emissive layer and one of the first set of organic layers is deposited by a solution-based process that utilizes a first solvent; depositing a first conductive interlayer by a dry deposition process; and depositing a second set of one or more organic layers, wherein at least one of the second set of organic layers is a second emissive layer and one of the second set of organic layers is deposited by a solution-based process that utilizes a second solvent, wherein all layers that precede the layer deposited using the second solvent are insoluble in the second solvent. | 01-07-2016 |
20160013364 | METHOD OF MANUFACTURING NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE | 01-14-2016 |
20160013365 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF | 01-14-2016 |
20160013454 | LIGHT EMITTING STRUCTURE, DISPLAY DEVICE INCLUDING A LIGHT EMITTING STRUCTURE AND METHOD OF MANUFACTURING A DISPLAY DEVICE INCLUDING A LIGHT EMITTING STRUCTURE | 01-14-2016 |
20160020398 | DONOR SUBSTRATE AND METHOD FOR FORMING TRANSFER PATTERN USING THE SAME - A donor substrate includes a base layer, a light-to-heat conversion layer disposed on the base layer, a buffer layer disposed on the light-to-heat conversion layer and a transfer layer disposed on the buffer layer. The buffer layer includes a cross-linked polymer, a spacer polymer bonded to the cross-linked polymer, and a perfluoroalkyl alcohol group bonded to the spacer polymer. | 01-21-2016 |
20160035763 | PROCESSING SUBSTRATES USING A TEMPORARY CARRIER - A technique comprising: securing a device substrate ( | 02-04-2016 |
20160035764 | PROCESSING SUBSTRATES USING A TEMPORARY CARRIER - A technique comprising: securing a device substrate ( | 02-04-2016 |
20160042852 | MAGNET PLATE ASSEMBLY, DEPOSITION APPARATUS INCLUDING THE MAGNET PLATE ASSEMBLY, AND DEPOSITION METHOD USING THE MAGNET PLATE ASSEMBLY - A magnet plate assembly includes a plurality of magnetic substances having predetermined magnetic forces, a magnet supporter supporting at least a corresponding one of the plurality of magnetic substances, and a guide support supporting the magnet supporter and comprising at least one guide opening. The magnetic plate assembly further includes a coupler extending through the at least one guide opening and movable within the at least one guide opening, the coupler being connected to the magnet supporter; and a driver unit connected to the coupler and configured to move the corresponding one of the plurality of magnetic substances with respect to the guide support. | 02-11-2016 |
20160064427 | Display Device and Method of Manufacturing the Same - A display device and a method of manufacturing the same are disclosed, in which a sensing electrode for sensing a touch of a user is built in a display panel, whereby a separate touch screen is not required on an upper surface of the display panel unlike the related art and thus thickness and manufacturing cost are reduced. | 03-03-2016 |
20160064701 | ACTIVE ORGANIC ELECTROLUMINESCENCE DEVICE BACK PANEL AND MANUFACTURING METHOD THEREOF - An active organic electroluminescence device back panel and a manufacturing method thereof are disclosed. The device back panel includes: a substrate, a plurality of active TFT pixel arrays formed on the substrate, and organic planarization layers, organic electroluminescence electrodes, pixel definition layers, and support bodies formed on the active TFT pixel arrays. Each of the active TFT pixel arrays includes a driving TFT and a switch TFT. The driving TFT has a gate insulation layer that has a thickness greater than a thickness of a gate insulation layer of the switch TFT. Through thickening the gate insulation layer of the driving TFT, the gate capacitance of the driving TFT can be reduced and the sub-threshold swing of the driving TFT is increased to realize well definition of grey levels. | 03-03-2016 |
20160079537 | METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - A method of manufacturing an organic light-emitting display apparatus includes preparing a substrate with a plurality of pixel electrodes, preparing a donor mask, such that the donor mask includes a base substrate, a light-thermal conversion layer on the base substrate, and a reflective layer between the base substrate and the light-thermal conversion layer and having through-holes, depositing a transfer layer on the light-thermal conversion layer of the donor mask, aligning the substrate and the donor mask, preheating at least a portion of the donor mask or the transfer layer, and irradiating a light source toward the preheated portion of the donor mask or the transfer layer, such that a portion of the transfer layer is transferred from the donor mask to the pixel electrodes of the substrate, the transferred portion of the transfer layer corresponding to the through holes in the reflective layer. | 03-17-2016 |
20160079568 | MASK FRAME ASSEMBLY, METHOD OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY DEVICE - A method of manufacturing a mask frame assembly, the method including: forming a first through hole in a vicinity of a first deposition region of a first mask; forming a second through hole in a vicinity of a second deposition region of a second mask; forming a third through hole in a first portion of a supporting stick; forming a fourth through hole in a second portion of the supporting stick; aligning the first through hole with the third through hole; aligning the second through hole with the fourth through hole; inserting a fixing member in the aligned first and third through holes; and inserting the fixing member in the aligned second and fourth through holes, wherein the support stick couples the first mask and the second mask together via the fixing member. | 03-17-2016 |
20160099376 | METHOD OF MANUFACTURING NANOSTRUCTURE SEMICONDUCTOR LIGHT-EMITTING DEVICE - According to an example embodiment, a method of manufacturing a nanostructure semiconductor light-emitting device includes forming nanocores of a first-conductivity type nitride semiconductor material on abase layer to be spaced apart from each other, and forming a multilayer shell including an active layer and a second-conductivity type nitride semiconductor layers on surfaces of each of the nanocores. At least a portion the multilayer shell is formed by controlling at least one process parameter of a flux of source gas, a flow rate of source gas, a chamber pressure, a growth temperature, and a growth rate so as to have a higher film thickness uniformity. | 04-07-2016 |
20160111645 | METHOD OF MANUFACTURING SUBSTRATE OF ORGANIC LIGHT-EMITTING DISPLAY DEVICE - A method of manufacturing a substrate of an organic light-emitting display device, the method including: forming, on a first surface of a transparent substrate, a photothermal conversion layer configured to covert incident light into thermal energy; forming partition walls on the first surface in a first region of the photothermal conversion layer, the partition walls including a photosensitive compound including a resorcinarene, the resorcinarene including a perfluorocarbon group; forming an organic material layer on the first surface in a second region of the photothermal conversion layer, the second region being defined by the partition walls; removing the partition walls; placing a target substrate over the organic material layer; and applying light to a second surface of the transparent substrate, the second surface being opposite the first surface of the transparent substrate. | 04-21-2016 |
20160118631 | ORGANIC LIGHT EMITTING DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME - An organic light emitting display panel including a partition wall to prevent different organic light emitting materials from being mixed with each other between adjacent light emitting areas. The partition wall may protrude from a surface of a pixel definition layer or a first common layer. Accordingly, desired light colors are generated by organic light emitting patterns respectively disposed in the light emitting areas. | 04-28-2016 |
20160126456 | DONOR SUBSTRATE - A donor substrate including: a light-transmitting base substrate; an insulation layer disposed on an upper surface of the light-transmitting base substrate, the insulating layer including: a first area having a first thickness; a second area having a second thickness, the second thickness different from the first thickness; and a third area having a third thickness, the third thickness different from the first thickness and the second thickness; an absorption layer disposed on the insulation layer; and a transfer layer disposed on the absorption layer. | 05-05-2016 |
20160126507 | MASK FRAME ASSEMBLY, METHOD OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - A mask frame assembly includes a frame, and a mask tensioned on the frame in a first direction, the mask having a deposition pattern portion having a plurality of pattern holes therethrough, a deposition material being deposited on a substrate through the pattern holes, and a dummy portion extending from the deposition pattern portion in the first direction, the dummy portion having an increased thickness in a second direction as a distance from the deposition pattern portion in the first direction increases, the second direction being oriented along a normal to the mask. | 05-05-2016 |
20160141498 | HIGH PRECISION, HIGH RESOLUTION COLLIMATING SHADOW MASK AND METHOD FOR FABRICATING A MICRO-DISPLAY - The method for producing an OLED micro-display on a silicon wafer uses a collimating shadow mask formed on a silicon substrate. The mask is fabricated by depositing a material layer on the front side and on the back side of the substrate and etching a portion of the layer on the back side of the substrate to a reduced thickness of at least 20 microns. At least one opening is created in the etched portion of the substrate. The substrate beneath the opening is removed to create the mask. The mask is situated at a location spaced from the surface of the silicon wafer and exposed to a linear evaporation source. Organic layers are then deposited on the silicon wafer in a location aligned with the mask opening. | 05-19-2016 |
20160163776 | ORGANIC LIGHT-EMITTING DIODE (OLED) DISPLAY AND METHOD FOR MANUFACTURING THE SAME - An organic light-emitting diode (OLED) display having thin film transistors (TFTs) is disclosed. In one aspect, TFTs of the OLED display include a substrate and a first semiconductor layer formed over the substrate and including first channel, source, and drain regions and a lightly doped region between the first channel region and the first source and drain regions. The OLED display also includes a second semiconductor layer formed over the substrate and including second channel, source, and drain regions. The OLED display further includes first and second gate electrodes formed over the first semiconductor layer and a third gate electrode formed over the second semiconductor layer. The width of the second gate electrode is less than that of the first gate electrode and the lightly doped region overlaps a portion of the first gate electrode and does not overlap the second gate electrode. | 06-09-2016 |
20160172430 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME | 06-16-2016 |
20160204389 | METHOD FOR PRODUCING TOP-EMISSION ORGANIC ELECTROLUMINESCENCE DISPLAY DEVICE AND COVER MATERIAL FOR FORMING TOP-EMISSION ORGANIC ELECTROLUMINESCENCE DISPLAY DEVICE | 07-14-2016 |
20160254452 | MASK PLATE, METHOD FOR PROCESSING ORGANIC LAYER AND METHOD FOR FABRICATING DISPLAY SUBSTRATE | 09-01-2016 |
20170236888 | Organic Light Emitting Diode Display Device and Method for Manufacturing the Same | 08-17-2017 |