Class / Patent application number | Description | Number of patent applications / Date published |
438032000 | Optical grating structure | 38 |
20080286894 | GALLIUM NITRIDE BASED SEMICONDUCTOR LIGHT EMITTING DIODE AND PROCESS FOR PREPARING THE SAME - A process for preparing a gallium nitride based semiconductor light emitting diode includes the step of: providing a substrate for growing a gallium nitride based semiconductor material; forming a lower clad layer on the substrate using a first conductive gallium nitride based semiconductor material; forming an active layer on the lower conductive clad layer using an undoped gallium nitride based semiconductor material; forming an upper clad layer on the active layer using a second conductive gallium nitride based semiconductor material; removing at least a portion of the upper clad layer and active layer at a predetermined region so as to expose the corresponding portion of the lower clad layer; and forming, on the upper surface of the upper clad layer, an ohmic contact forming layer made of In | 11-20-2008 |
20080299692 | Semiconductor laser and the method for manufacturing the same - The present invention is to provide a semiconductor laser with a feedback grating comprised of InP and AlGaInAs without InAsP put therebetween, and to provide a method for manufacturing the DFB-LD having such grating. The LD includes an n-type InP substrate, an AlInAsP intermediate layer, an AlGaInAs lower SCH layer, an active layer, and a p-type layer for upper cladding in this order from the InP substrate. The InP substrate, the AlInAsP intermediate layer, and the AlGaInAs lower SCH layer constitute the feedback grating. The AlInAsP intermediate layer lowers a series resistance along these semiconductor stacks. | 12-04-2008 |
20090011529 | IR-LIGHT EMITTERS BASED ON SWNT'S (SINGLE WALLED CARBON NANOTUBES), SEMICONDUCTING SWNTS-LIGHT EMITTING DIODES AND LASERS - The present invention relates to a new light emitters that exploit the use of semiconducting single walled carbon nanotubes (SWNTs). Experimental evidences are given on how it is possible, within the standard silicon technology, to devise light emitting diodes (LEDs) emitting in the infrared IR where light emission results from a radiative recombination of electron and holes on semiconducting single walled carbon nanotubes (SWNTs-LED). We will also show how it is possible to implement these SWNTs-LED in order to build up a laser source based on the emission properties of SWNTs. A description of the manufacturing process of such devices is also given. | 01-08-2009 |
20090011530 | NITRIDE-COMPOSITE SEMICONDUCTOR LASER ELEMENT, ITS MANUFACTURING METHOD, AND SEMICONDUCTOR OPTICAL DEVICE - A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 μm or more. | 01-08-2009 |
20090023238 | Method to form an optical grating and to form a distributed feedback laser diode with the optical grating - A method for forming a grating with an adjustable pitch and a method for forming a DFB-LD with an optical grating whose pitch is adjustable during the process are disclosed. The method of the invention; first prepares a mold with a pattern to form the grating; second, pushes the mold against the resin as deforming the mold; and third, hardens the mold. The resin with a periodic pattern whose pitch is adjustable during the process is available. | 01-22-2009 |
20090047751 | METHOD OF FABRICATING SEMICONDUCTOR LASER - There is provided a method of fabricating a semiconductor laser including a two-dimensional photonic crystal. The method comprises the steps of growing an In | 02-19-2009 |
20090111202 | Method for self bonding epitaxy - A method for self bonding epitaxy includes forming a passivation layer on a substrate surface of a semiconductor lighting element; etching to form recesses and protrusive portions with the passivation layer located thereon; starting forming epitaxy on the bottom surface of the recesses; filling the recesses with an Epi layer; then covering the protrusive portions and starting self bonding upwards the epitaxy to finish the Epi layer structure. Such a self bonding epitaxy growing technique can prevent cavity generation caused by parameter errors of the epitaxy and reduce defect density, and improve the quality of the Epi layer and increase internal quantum efficiency. | 04-30-2009 |
20090155944 | Surface Emitting Laser Device and Production Method - A surface emitting laser device is disclosed that is able to selectively add a sufficiently large loss to a high order transverse mode so as to efficiently suppress a high order transverse mode oscillation and to oscillate at high output in a single fundamental transverse mode. The surface emitting laser device includes a first resonance region that includes an active layer and spacer layers, two distributed Bragg reflectors that sandwich the resonance region, and a current confinement structure that defines a current injection region for the active layer. At least one of the distributed Bragg reflectors includes a second resonance region arranged in the current injection region excluding a predetermined region surrounding a center of the current injection region. | 06-18-2009 |
20090170229 | METHOD FOR PRODUCING A MODULATED GRATING FOR AN OPTIMAL REFLECTION SPECTRUM - Method for producing a modulated grating for an optimal reflection spectrum, which grating is a multiple wavelength reflector. The method includes the following steps: a) Determining wavelengths to be reflected b) Calculating a preliminary grating c) Comparing the reflection spectrum r | 07-02-2009 |
20090246903 | MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE - The present invention includes forming an optical guide layer on a substrate, forming a cap layer on the optical guide layer, and forming openings in parts of the optical guide layer and the cap layer to form a diffraction grating from part of the optical guide layer. The substrate is heated to a temperature less than a growth temperature of the cap layer and equal to at least a temperature at which mass transport of the cap layer occurs to cover, with part of the cap layer, the lateral faces of the optical guide layer exposed by the openings. A burying layer burying the diffraction grating is formed on the substrate, after the mass transport. | 10-01-2009 |
20090253224 | Nanocrystal structures - A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II-VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm. | 10-08-2009 |
20090286342 | SEMICONDUCTOR LIGHT-EMITTING DEVICE, SURFACE-EMISSION LASER DIODE, AND PRODUCTION APPARATUS THEREOF, PRODUCTION METHOD, OPTICAL MODULE AND OPTICAL TELECOMMUNICATION SYSTEM - A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature. | 11-19-2009 |
20090305446 | HIGH EFFICIENCY LIGHT EMITTING DIODE (LED) WITH OPTIMIZED PHOTONIC CRYSTAL EXTRACTOR - A high efficiency, and possibly highly directional, light emitting diode (LED) with an optimized photonic crystal extractor. The LED is comprised of a substrate, a buffer layer grown on the substrate (if needed), an active layer including emitting species, one or more optical confinement layers that tailor the structure of the guided modes in the LED, and one or more diffraction gratings, wherein the diffraction gratings are two-dimensional photonic crystal extractors. The substrate may be removed and metal layers may be deposited on the buffer layer, photonic crystal and active layer, wherein the metal layers may function as a mirror, an electrical contact, and/or an efficient diffraction grating. | 12-10-2009 |
20100022043 | SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing semiconductor laser device capable of reducing κL, with manufacturing restrictions satisfied, is provided. In a distributed-feedback or distributed-reflective semiconductor laser device, immediately before burying regrowth of a diffraction grating, halogen-based gas is introduced to a reactor, and etching is performed on the diffraction grating so that each side wall has at least two or more crystal faces and a ratio of length of an upper side in a waveguide direction to a bottom side parallel to a (100) surface is 0 to 0.3. And, a reactive product formed on side surfaces of the diffraction grating and in trench portions between stripes of the diffraction grating at an increase of temperature for regrowth is removed. Therefore, the diffraction grating with reduced height and a sine wave shape is obtained, thereby κL of the device is reduced. Thus, an oscillation threshold and optical output efficiency can be improved. | 01-28-2010 |
20100022044 | LASER DEVICE, LASER MODULE, SEMICONDUCTOR LASER AND FABRICATION METHOD OF SEMICONDUCTOR LASER - A semiconductor laser has first and second diffractive grating regions. The first diffractive grating region has segments, has a gain, and has first discrete peaks of a reflection spectrum. The second diffractive grating region has segments combined to each other, and has second discrete peaks of a reflection spectrum. Each segment has a diffractive grating and a space region. Pitches of the diffractive grating are substantially equal to each other. A wavelength interval of the second discrete peaks is different from that of the first discrete peaks. A part of a given peak of the first discrete peaks is overlapped with that of the second discrete peaks when a relationship between the given peaks of the first discrete peaks and the second discrete peaks changes. A first segment located in the first diffractive grating region or the second diffractive grating region has an optical length shorter or longer than the other segments of the first diffractive grating region and the second diffractive grating region by odd multiple of half of the pitch of the diffractive grating of the first diffractive grating region. | 01-28-2010 |
20100081224 | METHOD OF FORMING DIFFRACTION GRATING AND METHOD OF FABRICATING DISTRIBUTED FEEDBACK LASER DIODE - A method of forming a diffraction grating according to the present invention includes a step of preparing a mold having projections and recesses for forming a diffraction grating, a step of bringing the projections and recesses of the mold into contact with a resin layer in a chamber at a first pressure less than atmospheric pressure, a step of setting a pressure in the chamber to a second pressure more than the first pressure while maintaining the contact, and a step of hardening the resin layer while maintaining the contact between the resin layer and the projections and recesses so as to form a pattern for the diffraction grating on the hardened resin layer. The recesses in the projections and recesses of the mold form a closed pattern in the plane of the mold including the projections and recesses. | 04-01-2010 |
20100151608 | METHOD OF MANUFACTURING A SUBSTRATE FOR ORGANIC ELECTROLUMINESCENT DEVICE - Disclosed is a method of manufacturing a substrate for an organic EL device, the method comprising the step of: filling grooves of the optical element with sol-gel coating solution or organic metal cracking solution when a diffraction grating | 06-17-2010 |
20100197057 | METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE - A method for manufacturing a semiconductor optical device having an optical grating, includes the steps of: forming a semiconductor layer, an insulating layer and a first resin layer not containing silicon (Si); forming a second resin layer containing silicon (Si) on the first resin layer wherein the second resin layer has a pattern corresponding to the optical grating; etching the first resin layer using the second resin layer as a mask by a reactive ion etching that uses a mixed gas of oxygen and nitrogen where the first resin layer is cooled downto a first temperature during etching to form a protective layer on a side face of the etched first resin layer; increasing the temperature of the first resin layer upto a second temperature higher than the first temperature; etching the insulating layer using the patterned first resin layer as a mask; and forming the optical grating on the semiconductor layer by etching the semiconductor layer using the patterned insulating layer as a mask. | 08-05-2010 |
20110092007 | Method of Fabricating Antireflective Grating Pattern and Method of Fabricating Optical Device Integrated with Antireflective Grating Pattern - A method of fabricating an antireflective grating pattern and a method of fabricating an optical device integrated with an antireflective grating pattern are provided. The method of fabricating the antireflective grating pattern includes forming a photoresist (PR) pattern on a substrate using a hologram lithography process, forming a PR lens pattern having a predetermined radius of curvature by reflowing the PR pattern, and etching the entire surface of the substrate including the PR lens pattern to form a wedge-type or parabola-type antireflective subwavelength grating (SWG) pattern having a pointed tip on a top surface of the substrate. In this method, a fabrication process is simplified, the reflection of light caused by a difference in refractive index between the air and a semiconductor material can be minimized, and the antireflective grating pattern can be easily applied to optical devices. | 04-21-2011 |
20110212556 | PROCESS TO FORM A MOLD OF NANOIMPRINT TECHNIQUE FOR MAKING DIFFRACTION GRATING FOR DFB-LD - A process using the nanoimprint technique to form the diffraction grating for the DFB-LD is disclosed. The process includes (a) coating a resist for the EB exposure on a dummy substrate, (b) irradiating the resist as varying the acceleration voltage, (c) forming a resist pattern by developing the irradiated resist, (d) coating the SOG film on the patterned resist, (e) attaching the silica substrate on the cured SOG film, and (f) removing the dummy substrate with the resist from the SOG film and the silica substrate. Using the mold thus formed, the diffraction grating for the DFB-LD is formed by the nanoimprint technique. | 09-01-2011 |
20110306155 | METHOD FOR PRODUCING SEMICONDUCTOR OPTICAL DEVICE - A method for producing a semiconductor optical device includes the steps of forming a semiconductor layer; forming a non-silicon-containing resin layer; forming a first pattern in the non-silicon-containing resin layer; forming a silicon-containing resin layer; etching the silicon-containing resin layer to have a second pattern reverse to the first pattern; selectively etching the non-silicon-containing resin layer by a RIE method employing a gas mixture containing CF | 12-15-2011 |
20110306156 | SURFACE GRATINGS ON VCSELS FOR POLARIZATION PINNING - Methods for manufacturing a polarization pinned vertical cavity surface emitting laser (VCSEL). Steps include growing a lower mirror on a substrate; growing an active region on the lower mirror; growing an upper mirror on the active region; depositing a grating layer on the upper minor; and etching a grating into the grating layer. | 12-15-2011 |
20120058582 | METHOD FOR ETCHING INSULATING FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE - A method for etching an insulating film includes the steps of forming an insulating film; forming a first resin layer composed of a non-silicon-containing resin on the insulating film; forming a pattern including projections and recesses in the first resin layer; forming a second resin layer composed of a silicon-containing resin to cover the projections and the recesses of the pattern in the first resin layer; etching the second resin layer by reactive ion etching with etching gas containing CF | 03-08-2012 |
20120142129 | METHOD OF MANUFACTURING SEMICONDUCTOR LASER HAVING DIFFRACTION GRATING - A method of manufacturing a semiconductor laser having a diffraction grating includes the steps of forming a first semiconductor layer on a semiconductor substrate; forming periodic projections and recesses which constitute a diffraction grating in the first semiconductor layer; cleaning a surface of the first semiconductor layer with water; drying the surface of the first semiconductor layer; and forming a second semiconductor layer on the first semiconductor layer. In drying the surface of the first semiconductor layer, after replacing water adhering to the surface of the first semiconductor layer with a water-soluble organic solvent, exposing the surface of the first semiconductor layer provided with the projections and recesses to an atmosphere containing the water-soluble organic solvent. At least one of the first semiconductor layer and the second semiconductor layer is composed of a p-type semiconductor. | 06-07-2012 |
20130005062 | METHOD FOR MANUFACTURING SEMICONDUCTOR LASER - A method for manufacturing a semiconductor laser includes the steps of preparing a mold with a pattern surface having recesses, forming a stacked semiconductor layer including a grating layer, forming a resin part on the grating layer, forming a resin pattern portion on the resin part, forming a diffraction grating by etching the grating layer using the resin part as a mask, and forming a mesa-structure on the stacked semiconductor layer. Each of the recesses includes two end portions and a middle portion between the two end portions. A depth of at least one of the two end portions from the pattern surface is greater than that of the middle portion. The step of forming the mesa-structure includes the step of etching the stacked semiconductor layer so as to remove end portions of the diffraction grating in a direction orthogonal to a periodic direction thereof. | 01-03-2013 |
20130252360 | METHOD OF MANUFACTURING PHOTONIC CRYSTAL AND METHOD OF MANUFACTURING SURFACE-EMITTING LASER - Provided is a method of manufacturing a photonic crystal, including: a first step of forming, on a surface of a substrate, a protective mask for selective growth, the protective mask having an opening pattern opened therein; a second step of selectively growing a columnar semiconductor from an exposed portion of the surface of the substrate not having the mask formed thereon, laterally overgrowing the semiconductor layer on the mask, and embedding the mask; a third step of forming a photonic crystal in the semiconductor layer so that openings in the opening pattern and the one of pores and grooves which form the photonic crystal are at least partly overlapped each other when seen from a direction perpendicular to the surface of the substrate; a fourth step of removing at least part of the columnar semiconductor; and a fifth step of removing at least part of the mask. | 09-26-2013 |
20130267052 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a semiconductor light emitting device includes forming a lower cladding layer over a GaAs substrate; forming a quantum dot active layer over the lower cladding layer; forming a first semiconductor layer over the quantum dot active layer; forming a diffraction grating by etching the first semiconductor layer; forming a second semiconductor layer burying the diffraction grating; and forming an upper cladding layer having a conductive type different from that of the lower cladding layer over the second semiconductor layer, wherein the processes after forming the quantum dot active layer are performed at a temperature not thermally deteriorating or degrading quantum dots included in the quantum dot active layer. | 10-10-2013 |
20130295703 | METHOD FOR MANUFACTURING MULTI-DIMENSIONAL TARGET WAVEGUIDE GRATING AND VOLUME GRATING WITH MICRO-STRUCTURE QUASI-PHASE-MATCHING - A method for manufacturing a multi-dimensional target waveguide grating and volume grating with micro-structure quasi-phase-matching. An ordinary waveguide grating is used as a seed grating, and on this basis, a two-dimensional or three-dimensional sampling structure modulated with a refractive index, that is, a sampling grating, is formed. The sampling grating comprises multiple shadow gratings, and one of the shadow gratings is selected as a target equivalent grating. A sampled grating comprises Fourier components in many orders, that is, shadow gratings, a corresponding grating wave vector is [Formula 1], and the grating profile of all the shadow gratings changes with the sampling structure [Formula 2]. In a case where a seed grating wave vector [Formula 3] and a required two-dimensional or three-dimensional grating wave vector do not match, a certain Fourier periodic structure component of the Fourier components of the sampling structure is used to compensate for the wave vector mismatch. The manufacturing method may be applied to design and manufacture a multi-dimensional target waveguide grating and volume grating for any grating profile, and may simplify the grating manufacturing process and also make possible a variety of grating-based photon devices. | 11-07-2013 |
20140017836 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method of making a LED includes steps of providing a substrate having an epitaxial growth surface. A buffer layer and an intrinsic semiconductor layer are grown thereon in that order. A carbon nanotube layer is placed on the intrinsic semiconductor layer. A first semiconductor layer, an active layer, and a second semiconductor layer are grown in that order on the intrinsic semiconductor layer, the first semiconductor layer covering the carbon nanotube layer. A first electrode is applied to a surface of the second semiconductor layer and the substrate, the buffer layer, and the intrinsic semiconductor layer are removed to expose the carbon nanotube layer. A second electrode is applied to make electrical connections with the carbon nanotube layer. | 01-16-2014 |
20140073073 | MOLD FOR NANO-IMPRINTING, METHOD FOR FORMING DIFFRACTION GRATING, AND METHOD FOR PRODUCING OPTICAL DEVICE INCLUDING DIFFRACTION GRATING - A method for forming a diffraction grating includes the steps of preparing a mold including a pattern portion having a pattern for forming a diffraction grating; forming a first semiconductor layer on a substrate; forming a resin layer on the first semiconductor layer; pressing the pattern portion of the mold against the resin layer; forming the pattern for the diffraction grating in the resin layer by curing the resin layer; and forming the diffraction grating in the first semiconductor layer by etching the first semiconductor layer using the patterned resin layer. The mold includes a first base and a plurality of second bases disposed on the first base. The first base is made of a flexible material. The second base is made of a rigid material. The plurality of second bases each include the pattern portion and are spaced apart from each other with a predetermined distance. | 03-13-2014 |
20140193933 | METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE - A method for manufacturing a semiconductor optical device includes the steps of preparing a mold having an imprint pattern; forming a substrate product including a semiconductor layer; forming a first resin layer on the semiconductor layer; forming a diffraction grating pattern having periodic projections and recesses in the first resin layer using the mold, the projection of the diffraction grating pattern having a top portion and a base portion; changing a duty ratio of the diffraction grating pattern by dry-etching the first resin layer; forming a second resin layer on the first resin layer so as to cover the projection and the recess; removing the top portion by etching back the first and second resin layers; and selectively etching the first resin layer so as to have a reverse pattern to the diffraction grating pattern; and etching the semiconductor layer through the first resin layer. | 07-10-2014 |
20140199798 | QUANTUM CASCADE LASER MANUFACTURING METHOD - A quantum cascade laser manufacturing method includes: a step of pressing a mother stamper against a resin film having flexibility to make a resin stamper | 07-17-2014 |
20150337494 | ROLLER DEVICE USING SUCTION ROLLER, AND PRODUCTION METHOD FOR MEMBER HAVING UNEVEN STRUCTURE - A roll apparatus includes a suction roll, a suction mechanism, and a gas-permeable member. The suction roll is rotatable and has an outer circumferential surface and an inside defined by the outer circumferential surface. The suction mechanism generates a suction force toward the inside from an outside of the suction roll. The gas-permeable member covers the outer circumferential surface of the suction roll. The gas-permeable member and the suction roll allow water vapor to be uniformly extracted from an object to be processed while the object to be processed is pressed by means of the gas-permeable member. The roll apparatus of the present invention is capable of producing a member having a concave-convex structure to be used for diffracting or scattering light at a high yield and high throughput. | 11-26-2015 |
20150372452 | TWO-DIMENSIONAL PHOTONIC CRYSTAL LASER AND METHOD OF PRODUCING THE SAME - A two-dimensional photonic crystal laser according to the present invention includes a two-dimensional photonic crystal layer | 12-24-2015 |
20160028031 | SUBSTRATE HAVING RUGGED STRUCTURE OBTAINED FROM HYDROPHOBIC SOL/GEL MATERIAL - There are provided a fine concave-convex structure substrate which is hydrophobic and excellent in heat resistance, a solution used for producing the concave-convex structure substrate, and a method for producing the concave-convex structure substrate. The concave-convex structure substrate having the concave-convex structure includes a concave-convex structure layer made of a sol-gel material, and a contact angle of water on the sol-gel material in a flat and smooth film shape is not less than 80°. The concave-convex structure substrate according to the present invention has a hydrophobic surface, and thus, in the element in which the concave-convex structure substrate is incorporated, moisture adsorption onto the surface of the concave-convex structure substrate can be prevented, thereby making it possible to lengthen a service life of the element. | 01-28-2016 |
20160126700 | PROCESS FOR FORMING SEMICONDUCTOR LASER DIODE IMPLEMENTED WITH SAMPLED GRATING - A method to produce a semiconductor laser diode (LD) including a sampled grating (SG) is disclosed. The method prepares various resist patterns each including grating regions and space regions alternately arranged along an optical axis. The grating regions and the space region in respective cavity types have total widths same with the others but the grating regions in respective types has widths different from others. After the formation of the grating patterns based on the resist patterns, only one of the grating patterns is used for subsequent processes. | 05-05-2016 |
20160130138 | METHOD AND APPLICATIONS OF THIN-FILM MEMBRANE TRANSFER - The disclosure relates to method and apparatus for micro-contact printing of micro-electromechanical systems (“MEMS”) in a solvent-free environment. The disclosed embodiments enable forming a composite membrane over a parylene layer and transferring the composite structure to a receiving structure to form one or more microcavities covered by the composite membrane. The parylene film may have a thickness in the range of about 100 nm-2 microns; 100 nm-1 micron, 200-300 nm, 300-500 nm, 500 nm to 1 micron and 1-30 microns. Next, one or more secondary layers are formed over the parylene to create a composite membrane. The composite membrane may have a thickness of about 100 nm to 700 nm to several microns. The composite membrane's deflection in response to external forces can be measured to provide a contact-less detector. Conversely, the composite membrane may be actuated using an external bias to cause deflection commensurate with the applied bias. Applications of the disclosed embodiments include tunable lasers, microphones, microspeakers, remotely-activated contact-less pressure sensors and the like. | 05-12-2016 |
20160197455 | MANUFACTURING METHOD FOR VERTICAL CAVITY SURFACE EMITTING LASER | 07-07-2016 |