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Including integrally formed optical element (e.g., reflective layer, luminescent material, contoured surface, etc.)

Subclass of:

438 - Semiconductor device manufacturing: process

438022000 - MAKING DEVICE OR CIRCUIT EMISSIVE OF NONELECTRICAL SIGNAL

Patent class list (only not empty are listed)

Deeper subclasses:

Class / Patent application numberDescriptionNumber of patent applications / Date published
438030000 Liquid crystal component 141
438031000 Optical waveguide structure 59
438032000 Optical grating structure 24
Entries
DocumentTitleDate
20130045552Light emitting diode manufacturing method - A method of making a light emitting diode (LED) having an optical element is provided, comprising: providing a curable liquid polysiloxane/TiO02-21-2013
20130045551LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting device and method for manufacturing the same are described. A method for manufacturing a light-emitting device comprising steps of: providing a growth substrate, wherein the growth substrate has a first surface and a second surface; forming a light-absorbable layer on the first surface of the growth substrate; forming an illuminant epitaxial structure on the light absorbable layer; providing a laser beam and irradiating the second surface of the growth substrate, wherein the laser beam wavelength is greater than 1000 nm; and removing the growth substrate.02-21-2013
20130045553DISPLAY DEVICE, DISPLAY APPARATUS AND METHOD OF ADJUSTING A COLOR SHIFT OF WHITE LIGHT IN SAME - A display device includes: an optical cavity portion; and a light emitting layer, wherein a peak wavelength of an internal emission spectrum of the light emitting layer is identical to a peak wavelength of a multiple interference filter spectrum of the optical cavity portion, and wherein a color shift Δuv of white light in the display device at a viewing angle of 60° is less than or equal to 0.015. A method of adjusting a color shift of white light in a display device includes: setting a peak wavelength of a multiple interference filter spectrum obtained by an optical cavity portion in the display device equal to a peak wavelength of an internal emission spectrum of a light emitting layer in the display device; and adjusting a position of the light emitting layer in a thickness direction thereof02-21-2013
20090029495Fabrication Method of GaN Power LEDs with Electrodes Formed by Composite Optical Coatings - Fabrication method of GaN power LED with electrodes formed by composite optical coatings, comprising epitaxially growing N—GaN, active, and P—GaN layers successively on a substrate; depositing a mask layer thereon; coating the mask layer with photoresist; etching the mask layer into an N—GaN electrode pattern; etching through that electrode pattern to form an N—GaN electrode region; removing the mask layer and cleaning; forming a transparent, electrically conductive film simultaneously on the P—GaN and N—GaN layers; forming P—GaN and N—GaN transparent, electrically conductive electrodes by lift-off; forming bonding pad pattern for the P—GaN and N—GaN electrodes by photolithography process; simultaneously forming thereon bonding pad regions for the P—GaN and N—GaN electrodes by stepped electron beam evaporation; forming an antireflection film pattern by photolithography process; forming an antireflection film; thinning and polishing the backside of the substrate, then forming a reflector thereon; and completing the process after scribing, packaging and testing.01-29-2009
20110183450SURFACE EMITTING SEMICONDUCTOR LASER, METHOD FOR FABRICATING SURFACE EMITTING SEMICONDUCTOR LASER, MODULE, LIGHT SOURCE APPARATUS, DATA PROCESSING APPARATUS, LIGHT SENDING APPARATUS, OPTICAL SPATIAL TRANSMISSION APPARATUS, AND OPTICAL SPATIAL TRANSMISSION SYSTEM - A surface emitting semiconductor laser includes a substrate, a lower reflective mirror formed on the substrate, an active layer formed on the lower reflective mirror, an upper reflective mirror formed on the active layer, an optical mode controlling layer formed between the lower reflective mirror and the upper reflective mirror, and a current confining layer formed between the lower reflective mirror and the upper reflective mirror. The active layer emits light. The upper reflective mirror forms a resonator between the lower reflective mirror and the upper reflective mirror. In the optical mode controlling layer, an opening is formed for selectively absorbing or reflecting off light that is emitted in the active layer. The optical mode controlling layer optically controls mode of laser light. The current confining layer confines current that is applied during driving.07-28-2011
20080261340SURFACE-ROUGHENING METHOD - The method is disclosed as applied to roughening the light-emitting surface of an LED wafer for reduction of the internal total reflection of the light generated. A masking film of silver is first deposited on the surface of a wafer to be diced into LED chips. Then the masking film is heated to cause its coagulation into discrete particles. Then, using the silver particles as a mask, the wafer surface is dry etched to create pits therein. The deposition of silver on the wafer surface and its thermal coagulation into particles may be either successive or concurrent.10-23-2008
20120184057III-NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING THE III-NITRIDE SEMICONDUCTOR LASER DEVICE - A method of fabricating a III-nitride semiconductor laser device includes: preparing a substrate with a semipolar primary surface, where the semipolar primary surface includes a hexagonal III-nitride semiconductor; forming a substrate product having a laser structure, an anode electrode, and a cathode electrode, where the laser structure includes a substrate and a semiconductor region, and the semiconductor region is formed on the semipolar primary surface; after forming the substrate product, forming first and second end faces; and forming first and second dielectric multilayer films for an optical cavity of the nitride semiconductor laser device on the first and second end faces, respectively.07-19-2012
20100159622LIGHT EMITTING DEVICE AND METHOD OF FORMING THE SAME - A light-emitting device includes a transparent substrate, a transparent adhesive layer on the transparent substrate, a first transparent conductive layer on the transparent adhesive layer, a multi-layer epitaxial structure and a first electrode on the transparent conductive layer, and a second electrode on the multi-layer epitaxial structure. The multi-layer epitaxial structure includes a light-emitting layer. The transparent substrate has a first surface facing the transparent adhesive layer and a second surface opposite to the first surface, wherein the area of the second surface is larger than that of the light-emitting layer, and the area ratio thereof is not less than 1.6.06-24-2010
20100151603METHOD OF MANUFACTURING A RESONANT CAVITY OPTICAL RADIATION EMITTING DEVICE - A method of manufacturing a device for emission of optical radiation integrated on a substrate of a semiconductor material includes the steps of forming a first mirror, a second mirror of a dielectric type, and an active layer comprising a main zone designed to be excited to generate the radiation. First and second electrically conductive layers are formed and arranged to produce a generation electric signal of an electric field to which an excitation current of the main zone is associated. A dielectric region is formed between the first and the second layers by partially oxidizing the first electrically conductive layer to and thereby obtaining a thermal oxide layer, to space out corresponding peripheral portions of the first and second layers so that the electric field present in the main zone is greater than that present between the peripheral portions thus favouring a corresponding generation of the excitation current in the main zone.06-17-2010
20100087021METHOD OF FABRICATING PIXEL STRUCTURE - A method of fabricating a pixel structure includes first forming a first, a second, and a third dielectric layers over an active device and a substrate. Etching rates of the first and the third dielectric layers are lower than an etching rate of the second dielectric layer. A contact opening exposing a portion of the active device is formed in the third, the second, and the first dielectric layers. The third and the second dielectric layers are patterned to form a number of stacked structures. An electrode material layer is formed and fills the contact opening. The electrode material layer located on the stacked structures and the electrode material layer located on the first dielectric layer are separated. The stacked structures and the electrode material layer thereon are simultaneously removed to define a pixel electrode and to form at least an alignment slit in the pixel electrode.04-08-2010
20120178195Method of Manufacturing a Light Emitting, Photovoltaic or Other Electronic Apparatus and System - The present invention provides a method of manufacturing an electronic apparatus, such as a lighting device having light emitting diodes (LEDs) or a power generating device having photovoltaic diodes. The exemplary method includes depositing a first conductive medium within a plurality of channels of a base to form a plurality of first conductors; depositing within the plurality of channels a plurality of semiconductor substrate particles suspended in a carrier medium; forming an ohmic contact between each semiconductor substrate particle and a first conductor; converting the semiconductor substrate particles into a plurality of semiconductor diodes; depositing a second conductive medium to form a plurality of second conductors coupled to the plurality of semiconductor diodes; and depositing or attaching a plurality of lenses suspended in a first polymer over the plurality of diodes. In various embodiments, the depositing, forming, coupling and converting steps are performed by or through a printing process.07-12-2012
20120178194Method of Manufacturing a Light Emitting, Photovoltaic or Other Electronic Apparatus and System - The present invention provides a method of manufacturing an electronic apparatus, such as a lighting device having light emitting diodes (LEDs) or a power generating device having photovoltaic diodes. The exemplary method includes depositing a first conductive medium within a plurality of channels of a base to form a plurality of first conductors; depositing within the plurality of channels a plurality of semiconductor substrate particles suspended in a carrier medium; forming an ohmic contact between each semiconductor substrate particle and a first conductor; converting the semiconductor substrate particles into a plurality of semiconductor diodes; depositing a second conductive medium to form a plurality of second conductors coupled to the plurality of semiconductor diodes; and depositing or attaching a plurality of lenses suspended in a first polymer over the plurality of diodes. In various embodiments, the depositing, forming, coupling and converting steps are performed by or through a printing process.07-12-2012
20100112736FULL COLOR DISPLAY - A full color display comprising a red, a green, and a blue light emitting diode, each light emitting diode including a light emitting region having at least one layer of single crystal rare earth material, the rare earth material in each of the light emitting diodes having at least one radiative transition, and the rare earth material producing a radiation wavelength of approximately 640 nm in the red light emitting diode, 540 nm in the green light emitting diode, and 460 nm in the blue light emitting diode. Generally, the color of each LED is determined by selecting a rare earth with a radiative transition producing a radiation wavelength at the selected color. In cases where the rare earth has more than one radiative transition, tuned mirrors can be used to select the desired color.05-06-2010
20130078749ORGANIC LIGHT EMITTING DEVICE - The organic light emitting device of the present invention has a plurality of emission layers between an anode and a cathode, and the emission layers are separated from each other by an equipotential surface forming layer or a charge generating layer. The feature of the present invention resides in that the organic light emitting device has, at least either inside or outside the device, a light scattering means for scattering light emitted from the emission layers. The organic light emitting device can reduce the angle dependency of the emission brightness and the emission color by outputting the light emitted from the emission layers in a condition where the light is scattered by the light scattering means.03-28-2013
20130078750FABRICATING METHOD OF NANO STRUCTURE FOR ANTIREFLECTION AND FABRICATING METHOD OF PHOTO DEVICE INTEGRATED WITH ANTIREFLECTION NANO STRUCTURE - A method of fabricating nanostructure for antireflection and a method of fabricating a photo device integrated with the nanostructure for antireflection are provided. The fabrication of the nanostructure for antireflection includes coating a solution containing a combination of metal ions with organic or inorganic ions on a substrate, sintering the coated solution using an annealing process to grow nanoscale metal particles, and chemically etching the substrate using the metal particles as mask or accelerator to form a subwavelength nanostructure on the surface of the substrate, thereby manufacturing the nanostructure for antireflection without an apparatus requiring a vacuum state using a simple method for a short amount of time to minimize reflection of light at an interface between a semiconductor material and the air, and producing a photo device having good luminous efficiency and performance at low cost in large quantities by applying it to the photo device.03-28-2013
20130210180LIGHT EMITTING DIODES - A method of producing a light emitting device comprises providing a wafer structure including a light emitting layer of III-nitride semiconductor material; dry etching the wafer at least part way through the light emitting layer so as to leave exposed surfaces of the emitting layer; and treating the exposed surfaces of the emitting layer with a plasma. The treatment may be using hot nitric acid or a hydrogen plasma.08-15-2013
20120208309GLASS PLATE FOR SUBSTRATE, METHOD FOR PRODUCING SAME, AND METHOD FOR PRODUCING TFT PANEL - The present invention relates to a glass plate for a substrate contains, as a glass matrix composition, in mol % on the oxide basis, SiO08-16-2012
20090191654METHOD OF MANUFACTURING COLOR FILTER SUBSTRATE AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE - A method of manufacturing a color filter substrate includes forming a plurality of trenches having a predetermined depth by etching a surface of a transparent substrate, disposing a color filter material in the plurality of trenches to form a color filter layer, and forming a transparent electrode on the transparent substrate including the color filter layer therein.07-30-2009
20090155943Luminescent Ceramic Element For A Light Emitting Device - A semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is attached to a compound substrate including a host which provides mechanical support to the device and a ceramic layer including a luminescent material. In some embodiments the compound substrate includes a crystalline seed layer on which the semiconductor structure is grown. The ceramic layer is disposed between the seed layer and the host. In some embodiments, the compound substrate is attached to the semiconductor structure after growth of the structure on a conventional growth substrate. In some embodiments, the compound substrate is spaced apart from the semiconductor structure and does not provide mechanical support to the structure. In some embodiments, the ceramic layer has a thickness less than 500 μm.06-18-2009
20090155942HYBRID METAL BONDED VERTICAL CAVITY SURFACE EMITTING LASER AND FABRICATING METHOD THEREOF - Provided is a method of fabricating a vertical cavity surface emitting laser among semiconductor optical devices, comprising: bonding a dielectric mirror layer to an epi-structure having a mirror layer and an active layer; bonding these on a new substrate using a metal bonded method; removing the existing substrate; and fabricating a vertical cavity surface emitting laser on the new substrate. The method of fabricating the vertical cavity surface emitting laser is performed by moving and attaching a vertical cavity surface emitting laser to a new substrate using an external metallic bonding method, without electrically and optically affecting upper and lower mirrors and an active layer that constitutes the vertical cavity surface emitting laser. While using the existing method of fabricating the vertical cavity surface emitting laser, the VCSEL is fabricated by moving to a new substrate having good thermal characteristics so that good heat emission characteristics are accomplished, thus facilitating manufacture of the vertical cavity surface emitting laser having high reliability and good characteristics.06-18-2009
20090155941LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING METHOD THEREOF AND THIN FILM FORMING APPARATUS - A method of manufacturing a light emitting device of upward emission type and a thin film forming apparatus used in the method are provided. A plurality of film forming chambers are connected to a first transferring chamber. The plural film forming chambers include a metal material evaporation chamber, an EL layer forming chamber, a sputtering chamber, a CVD chamber, and a sealing chamber. By using this thin film forming apparatus, an upward emission type EL element can be fabricated without exposing the element to the outside air. As a result, a highly reliable light emitting device is obtained.06-18-2009
20090155940METHOD OF MANUFACTURING THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY HAVING THIN FILM TRANSISTOR - A method of manufacturing a thin film transistor having a compound semiconductor with oxygen as a semiconductor layer and a method of manufacturing an organic light emitting display having the thin film transistor include: forming a gate electrode on an insulating substrate; forming a gate insulating layer on the gate electrode; forming a semiconductor layer including oxygen ions on the gate insulating layer, and including a channel region, a source region, and a drain region; forming a source electrode and a drain electrode to contact the semiconductor layer in the source region and the drain region, respectively; and forming a passivation layer on the semiconductor layer by coating an organic material, wherein a carrier density of the semiconductor layer is maintained in the range of 1E+17 to 1E+18/cm06-18-2009
20100041172METHOD OF FABRICATING SEMICONDUCTOR LIGHT EMITTING DEVICE - The present invention provides a method for fabricating a flip chip semiconductor light-emitting device which includes a substrate and a semiconductor multi-layer structure. The method of the invention includes the steps of: (a) forming a semiconductor multi-layer structure on a first substrate; (b) flip-chip bonding the semiconductor multi-layer structure on a second substrate; (c) removing the first substrate, so as to expose a first surface of the semiconductor multi-layer structure; and (d) forming a plurality of protrusions, arranged periodically, on the first surface. Particularly, the protrusions comprise a first protrusion and a second protrusion adjacent to the first protrusion, the first protrusion and the second protrusion both having a peak, and the second surface having a bottom, wherein the ratio of the vertical distance between one of the peaks and the bottom and the horizontal distance between the two peaks is in between 0.01 and 10.02-18-2010
20090137076SURFACE EMITTING SEMICONDUCTOR LASER, ITS MANUFACTURING METHOD, AND MANUFACTURING METHOD OF ELECTRON DEVICE - A surface emitting semiconductor laser which can perform laser oscillation in a single peak beam like that in a single lateral mode and a manufacturing method which can easily manufacture such a laser at a high yield are provided. When a surface emitting semiconductor laser having a post type mesa structure is formed on an n-type semiconductor substrate, a mesa portion is formed and up to a p-side electrode and an n-side electrode are formed. Thereafter, a voltage is applied across the p-side and n-side electrodes and the laser is subjected to a steam atmosphere while extracting output light, thereby forming an Al oxide layer onto a p-type Al05-28-2009
20130029440METHOD FOR FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device is disclosed. The semiconductor light-emitting device comprises a multilayer epitaxial structure disposed on a substrate. The substrate has a predetermined lattice direction perpendicular to an upper surface thereof, wherein the predetermined lattice direction is angled toward [0 01-31-2013
20090124033PROCESS FOR PRODUCING ORGANICLIGHT-EMITTING DISPLAY DEVICE - A position displacement between a substrate and a mask which is caused when the substrate and the mask are brought into close contact with each other is suppressed by a magnetic force. In a step of forming an organic compound layer (organic EL element film) included in an organic light-emitting display device on the substrate (05-14-2009
20130089939METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making light emitting diode is provided. The method includes following steps. A light emitting diode chip is provided, the light emitting diode includes a first semiconductor layer, an active layer and a second semiconductor layers stacked on a surface of a substrate in that order. A patterned mask layer is located on the second semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures aligned side by side. The second semiconductor layer is etched to form a number of three-dimensional nano-structures preform. The mask layer is removed to form a number of M-shaped three-dimensional nano-structures. The second semiconductor layer and the active layer are etched to expose a portion of the first semiconductor layer. A first electrode is electrically connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer.04-11-2013
20130052765ORGANIC ELECTRO-LUMINESCENCE DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME - The present invention relates to an organic electro-luminescence display device and a method for fabricating the same, in which damage to a pad portion is prevented for improving yield.02-28-2013
20130089938METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making light emitting diode is provided. The method includes following steps. A light emitting diode chip is provided, wherein the light emitting diode chip comprises a first semiconductor layer, an active layer and a second semiconductor layers stacked together in that order. A patterned mask layer is located on a surface of the first semiconductor layer, wherein the patterned mask layer includes a number of bar-shaped protruding structures aligned side by side, and a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed portion of the first semiconductor layer is etched to form a protruding pair. A number of M-shaped three-dimensional nano-structures are formed by removing the mask layer. A first electrode is electrically connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer.04-11-2013
20100129946SURFACE EMITTING LASER ARRAY, PRODUCTION PROCESS THEREOF, AND IMAGE FORMING APPARATUS HAVING SURFACE EMITTING LASER ARRAY - A surface emitting laser array comprising a plurality of surface emitting laser devices each having a semiconductor layer containing a first reflection mirror, an active layer, a current confined portion and a second reflection mirror. The laser array further comprises a first metal material layer for dissipating heat formed through a first insulating layer on the semiconductor layer and a second metal material layer for injecting current into the active layer formed through a second insulating layer on the first metal material layer. The first metal material layer is commonly shared by the plurality of the surface emitting laser devices.05-27-2010
20090305445Method for Manufacturing Light-Emitting Device - In the present invention, a first substrate which is an evaporation donor substrate is prepared in which a material layer is formed over a patterned reflective layer. A surface of the material layer over the first substrate is irradiated with first light which satisfies one predetermined irradiation condition to pattern the material layer. A surface opposite to the surface of the first substrate is irradiated with second light which satisfies another predetermined irradiation condition to evaporate the patterned material layer onto a second substrate, which is a deposition target substrate. According to the present invention, deterioration of a material included in the material layer can be prevented and a film pattern can be formed on the second substrate with high accuracy.12-10-2009
20110059560Organic Electroluminescence Pixel, Organic Electroluminescence Device, and Manufacturing Method Thereof - An organic electroluminescence pixel, an organic electroluminescence device comprising the same, and method for manufacturing the organic electroluminescence device are provided. The organic electroluminescence pixel comprises a substrate, a first electrode, a first carrier-injection layer, a semi-trans-flective metal layer, an organic emitting layer, and a second electrode. The first electrode is formed on the substrate. The first carrier-injection layer, the semi-trans-flective metal layer, and the organic emitting layer are formed between the first electrode and the second electrode. At least one of the first electrode and the second electrode comprises a transparent electrode.03-10-2011
20110014734METHOD FOR FABRICATING FLIP CHIP GALLIUM NITRIDE LIGHT EMITTING DIODE - The present invention discloses a method for fabricating a flip chip GaN LED, which has a predetermined region on an epitaxial layer for forming a first groove to expose a portion of the substrate, and another predetermined region on the epitaxial layer for forming a second groove to expose a portion of N type GaN Ohm contacting layer. On a side of the first groove, there are a translucent conducting layer, an N type electrode pad, a first isolation protection layer, a metallic reflection layer and a second isolation protection layer sequentially formed on the surface of a P type GaN Ohm contacting layer. On another side of the first groove, a translucent conducting layer, an N type electrode pad, a first isolation protection layer and a second isolation protection layer are sequentially formed on the surface of an N type GaN Ohm contacting layer. The above structure not only can provide a flat surface for electrical connection of the P type and N type electrode pads with the circuit board, but also to keep the metallic reflection layer from conducting electricity to avoid increasing the forward voltage and the power consumption, and accordingly to promote the light emitting performance of the LED.01-20-2011
20090269871EL Display Device and Method of Manufacturing the Same - To provide a high throughput film deposition means for film depositing an organic EL material made of polymer accurately and without any positional shift. A pixel portion is divided into a plurality of pixel rows by a bank, and a head portion of a thin film deposition apparatus is scanned along a pixel row to thereby simultaneously apply a red light emitting layer application liquid, a green light emitting layer application liquid, and a blue light emitting layer application liquid in stripe shapes. Heat treatment is then performed to thereby form light emitting layers luminescing each of the colors red, green, and blue.10-29-2009
20090269869Multiple reflection layer electrode, compound semiconductor light emitting device having the same and methods of fabricating the same - Provided are a multiple reflection layer electrode, a compound semiconductor light emitting device having the same and methods of fabricating the same. The multiple reflection layer electrode may include a reflection layer on a p-type semiconductor layer, an APL (agglomeration protecting layer) on the reflection layer so as to prevent or retard agglomeration of the reflection layer, and a diffusion barrier between the reflection layer and the APL so as to retard diffusion of the APL.10-29-2009
20090269868Methods of Manufacture for Quantum Dot optoelectronic devices with nanoscale epitaxial lateral overgrowth - Optoelectronic devices are provided that incorporate quantum dots as the electroluminescent layer in an inorganic wide-bandgap heterostructure. The quantum dots serve as the optically active component of the device and, in multilayer quantum dot embodiments, facilitate nanoscale epitaxial lateral overgrowth (NELOG) in heterostructures having non-lattice matched substrates. The quantum dots in such devices will be electrically pumped and exhibit electroluminescence, as opposed to being optically pumped and exhibiting photoluminescence. There is no inherent “Stokes loss” in electroluminescence thus the devices of the present invention have potentially higher efficiency than optically pumped quantum dot devices. Devices resulting from the present invention are capable of providing deep green visible light, as well as, any other color in the visible spectrum, including white light by blending different sizes and compositions of the dots and controlling manufacturing processes.10-29-2009
20090269867METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR AND NITRIDE SEMICONDUCTOR ELEMENT - The present invention provides a method of manufacturing a nitride semiconductor capable of improving the crystallinity and the surface state of the nitride semiconductor crystal formed on top of a high-temperature AlN buffer layer. An AlN buffer layer is formed on top of a growth substrate, and then nitride semiconductor crystals are grown on top of the AlN buffer layer. In a stage of manufacturing the nitride semiconductor, the crystal of the AlN buffer layer is grown at a high temperature of 900° C. or higher. In addition, an Al-source material of the AlN buffer layer is started to be supplied first to a reaction chamber and continues to be supplied without interruption, and then a N-source material is supplied intermittently.10-29-2009
20130189806PROCESSING METHOD FOR WAFER - A wafer has, on a front face thereof, a device region in which a device is formed in regions partitioned by a plurality of scheduled division lines. An outer peripheral region surrounds the device region. A reflecting film of a predetermined width is formed from the outermost periphery of the wafer on a rear face of the wafer corresponding to the outer peripheral region. The front face side of the wafer is held in a chuck table, and a focal point of a pulsed laser beam of a wavelength having permeability through the wafer is positioned in the inside of the wafer corresponding to the scheduled division lines. The pulsed laser beam is irradiated from the rear face side of the wafer to form modified layers individually serving as a start point of division along the scheduled division lines in the inside of the wafer.07-25-2013
20110020968MANUFACTURING PROCESS OF TRANSFLECTIVE PIXEL STRUCTURE - A transflective pixel structure including a scan line, a data line, a thin film transistor, a pixel electrode and an organic material layer is provided. The scan line and the data line are disposed over a substrate. The thin film transistor is disposed over the substrate and electrically connected to the scan line and the data line. The pixel electrode is disposed over a substrate and is electrically connected to the thin film transistor. The pixel electrode has a reflective region and a transmissive region. The organic material layer covers both the thin film transistor and the pixel electrode. The organic material layer disposed correspondently above the transmissive region of the pixel electrode has a plurality of refracting patterns on its upper surface.01-27-2011
20090233390LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - The light emitting device according to the present invention is characterized in that a gate electrode comprising a plurality of conductive films is formed, and concentrations of impurity regions in an active layer are adjusted with making use of selectivity of the conductive films in etching and using them as masks. The present invention reduces the number of photolithography steps in relation to manufacturing the TFT for improving yield of the light emitting device and shortening manufacturing term thereof, by which a light emitting device and an electronic appliance are inexpensively provided.09-17-2009
20090047749Methods of manufacturing thin film transistor and display device - A first patterned conductive layer is formed on a substrate. A dielectric layer, a semiconductor layer, a second conductive layer and a photoresist layer are formed above the first patterned conductive layer. The photoresist layer is patterned using a photomask with multiple different transparencies, and the patterned photoresist layer has at least three different thicknesses. The photoresist layer within the channel region is removed. The second conductive layer within the channel region and part of semiconductor layer are etched to form a channel, source and drain of a thin film transistor. The photoresist layer corresponding to a pixel connecting region and a data pad region is removed to expose a pixel connecting region and a data pad. The remained photoresist layer is reflowed so as to cover the channel. The uncovered semiconductor layer is removed using the reflowed photoresist layer and the patterned second conductive layer as a mask.02-19-2009
20090011528METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DEVICE HAVING PHOTO DIODE - A method for manufacturing an organic light emitting device including a photo diode and a transistor includes forming a first semiconductor layer and a second semiconductor layer on separate portions of a buffer layer formed on the substrate; forming a gate metal layer on the first semiconductor layer, the gate metal layer covering a central region of the first semiconductor layer; forming a high-concentration P doping region and a high-concentration N doping region in the first semiconductor layer by injecting impurities into regions of the first semiconductor layer not covered by the gate metal layer to form the photodiode; forming a source and drain region and a channel region in the second semiconductor layer; and removing the gate metal layer from the central region of the first semiconductor layer by etching and simultaneously forming a gate electrode by etching, the gate electrode being insulated from the channel region of the second semiconductor layer, to form the transistor.01-08-2009
20120270346ASYMMETRIC DBR PAIRS COMBINED WITH PERIODIC AND MODULATION DOPING TO MAXIMIZE CONDUCTION AND REFLECTIVITY, AND MINIMIZE ABSORPTION - Methods for fabricating an optical device that exhibits improved conduction and reflectivity, and minimized absorption. Steps include forming a plurality of mirror periods designed to reflect an optical field having peaks and nulls. The formation of a portion of the plurality of minor periods includes forming a first layer having a thickness of less than one-quarter wavelength of the optical field; forming a first compositional ramp on the first layer; and forming a second layer on the compositional ramp, the second layer having a different index of refraction than the first layer and having a thickness such that the nulls of the optical field occur within the second layer and not within the compositional ramp, and wherein forming the second layer further comprises heavily doping the second layer at a location of the nulls of the optical field.10-25-2012
20110129952THIN FILM TRANSISTOR SUBSTRATES AND METHOD OF MANUFACTURING THE SAME - A thin film transistor substrate includes a color filter layer and a gate line. The color filter layer has a reverse taper shape, which is used to pattern the gate line without a separate mask. Thus, the total number of masks used to manufacture the thin film transistor substrate can be reduced, thereby reducing the manufacturing cost and improving the productivity.06-02-2011
20100124795METHOD FOR MANUFACTURING FLEXIBLE SEMICONDUCTOR DEVICE - It is an object of one embodiment of the preset invention to conduct separation without damaging a semiconductor element when the semiconductor element is made flexible. Further, it is another object of one embodiment of the preset invention to provide a technique for weakening adhesion between a separation layer and a buffer layer. Furthermore, it is another object of one embodiment of the preset invention to provide a technique for preventing generation of the bending stress on a semiconductor element due to separation. A semiconductor element formed over a separation layer with a buffer layer interposed therebetween is separated by dissolving the separation layer by using an etchant. Alternatively, separation is conducted by inserting a film into a region where a separation layer is dissolved by being in contact with an etchant and moving the film in a direction toward a region where the separation layer is not dissolved.05-20-2010
20110092006METHOD OF FABRICATING DISPLAY DEVICE USING PLASTIC SUBSTRATE - Disclosed is a method of fabricating a display device that includes: forming an adhesive layer of an inorganic material on a carrier substrate having a display area and a non-display area surrounding the display area; forming a plurality of adhesive patterns of a metallic material on the adhesive layer, each of the plurality of adhesive patterns having a width and a height; forming a plastic substrate on the adhesive layer and the plurality of adhesive patterns; forming a plurality of elements for displaying images on the plastic substrate; cutting the carrier substrate and the plastic substrate to divide the display area and the non-display area; and detaching the carrier substrate from the plastic substrate.04-21-2011
20100203661METHOD FOR PRODUCING LIGHT-EMITTING DIODE - The present invention provides a method for producing a light-emitting diode, the method comprising a lamination step of forming a laminated semiconductor layer by sequentially laminating an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer onto a substrate, as well as forming a plurality of reflective p-type electrodes on top of the p-type semiconductor layer, a plating step of forming a seed layer that covers the reflective p-type electrodes and the p-type semiconductor layer, and fowling a plating layer on top of the seed layer, a removal step of removing the substrate from the n-type semiconductor layer, thereby exposing a light extraction surface of the n-type semiconductor layer, and an electrode formation step of performing dry etching of the light extraction surface of the n-type semiconductor layer using an etching gas containing the same element as a dopant element within the n-type semiconductor layer, and subsequently forming an n-type electrode on the light extraction surface.08-12-2010
20130023076METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE - A light-emitting device manufacturing method comprises the steps of irradiating a substrate 01-24-2013
20110027924SURFACE EMITTING LASER, METHOD FOR MANUFACTURING SURFACE EMITTING LASER, AND IMAGE FORMING APPARATUS - A surface emitting laser includes a lower multilayer mirror and an upper multilayer mirror which are provided on a substrate. A first oxidizable layer is partially oxidized to form a first current confinement layer including a first conductive region and a first insulating region. A second oxidizable layer is partially oxidized to form a second current confinement layer including a second conductive region and a second insulating region, a boundary between the first conductive region and the first insulating region being disposed inside the second current confinement layer in an in-plane direction of the substrate. The first oxidizable layer and the second oxidizable layer or layers adjacent to the respective oxidizable layers are adjusted so that when both layers are oxidized under the same oxidizing conditions, the oxidation rate of the first oxidizable layer is lower than that of the second oxidizable layer.02-03-2011
20090275157OPTICAL DEVICE SHAPING - Embodiments described herein provide methods for manufacturing an optical device having shaped sidewalls. A desired substrate shape corresponding to an LED or other optical device can be determined. The optical device can have a substrate comprising an exit face and sidewalls positioned and shaped to reflect light to the exit face to allow light to escape the exit face. A substrate material can be shaped based on the desired substrate shape for one or more LEDs. Shaping can be done using a wire saw, etching, ultrasonic shaping or other technique.11-05-2009
20110300652NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME - There is provided a nitride semiconductor light emitting device and a manufacturing method of the same. The nitride semiconductor light emitting device including: a substrate for growing a nitride single crystal, the substrate having electrical conductivity; a p-type nitride semiconductor layer formed on the substrate; an active layer formed on the p-type nitride semiconductor layer, the active layer including a plurality of quantum barrier layers and a plurality of quantum well layers deposited alternately on each other; an n-type nitride semiconductor layer formed on the active layer; a p-electrode formed on a bottom of the substrate; and an n-electrode formed on a top of the n-type nitride semiconductor layer.12-08-2011
20110300651METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE - According to one embodiment, a method for manufacturing a light-emitting device is disclosed. The method can include forming a first electrode and a second electrode on a semiconductor layer which is included in a first structure body, the semiconductor layer including a light-emitting layer on a substrate. The method can include forming a first metal pillar in conduction with the first electrode, and a second metal pillar in conduction with the second electrode. The method can include filling a region between the first metal pillar and the second metal pillar with an insulating layer. In addition, the method can include separating the substrate from the semiconductor layer, and forming a second structure body in which the semiconductor layer is supported by the insulating layer and which is convex toward an opposite side of the insulating layer to the semiconductor layer.12-08-2011
20120288972LED PHOSPHOR INK COMPOSITION FOR INK-JET PRINTING - The present invention provides an ink jet printable phosphor ink composition for LED packaging that enables precision control of the amount and position of phosphor layers on the LED device or the LED device packaging. The ink includes both a UV-curable resin component and a thermally curable resin component. A phase-separation component prevents phase separation of the UV-curable resin component and the thermally curable resin component. Phosphor particles on the order of less than approximately 2 microns are uniformly dispersed throughout the ink composition. The phosphor ink composition is deposited through either thermal or piezoelectric ink jet printing; a thin layer is deposited in a desired pattern. UV curing (and, optionally, thermal curing) is used to fix each layer followed by subsequent deposition and curing. In this manner, undesirable phosphor settling does not occur and layers are selectively built up to form precise phosphor distributions.11-15-2012
20110281381Method for producing group III nitride semiconductor light-emitting device - The present invention provides a method for producing a Group III nitride semiconductor light-emitting device, the device including a light-emitting layer which is formed so as to contour a stripe-pattern embossment and to have a uniform thickness. In the production method, firstly, a stripe-pattern embossment having a serrated cross section is formed on one surface of a substrate. Subsequently, on the surface of the substrate on the side of the stripe-pattern embossment having a serrated cross section, an n-type layer, a light-emitting layer, and a p-type layer are sequentially deposited through reduced-pressure MOCVD so as to contour the embossment. Thus, each of the layers is formed so as to contour the embossment, and to have a stripe pattern with a serrated cross section. In this MOCVD process, the direction of gas flow is parallel with the direction of the stripe of the embossment. Thus, the light-emitting layer has uniform thickness and composition in an in-plane direction.11-17-2011
20110294243PHOTORESIST COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN USING THE SAME - A photoresist composition suitable for forming a high-resolution pattern, and a method of forming a photoresist pattern using the same. The photoresist composition includes about 10 to about 45 parts by weight of an alkali soluble binder resin including a hydroxyl group, about 0.1 to about 5 parts by weight of a photo-acid generator, about 1 to about 5 parts by weight of a cross-linker that cross-links the alkali-soluble binder resin including the hydroxyl group, about 0.3 to about 3 parts by weight of a quinone diazide compound, and a remainder of a solvent.12-01-2011
20090298210LIGHT EMITTING DEVICE - An inexpensive light emitting device and inexpensive electric equipment are provided. A substrate on which a semiconductor element or a light emitting element is formed and a color filter are manufactured by separate manufacturing processes, and they are bonded to each other to complete the light emitting device. Thus, the yield of the light emitting device is improved and the manufacture period is shortened.12-03-2009
20090298209OPTOELECTRONIC DEVICE MANUFACTURING - A method for manufacturing an optoelectronic device including a capping layer for improving out-coupling and optical fine-tuning of emission characteristics includes steps of: producing an optoelectronic member for generating photons of a predefined wavelength; producing a light emitting surface on the optoelectronic member; and producing a capping layer on the light emitting surface.12-03-2009
20100035371Method for Fabricating Light Emitting Device - By using a first substrate which has a light-transmitting property and whose first face is provided with a light-absorbing layer, a mixture including an organic compound and an inorganic material is irradiated with light having a wavelength, which is absorbed by the inorganic material to heat the mixture, and thereby a film of the organic compound included in the mixture is formed on the first face of the first substrate. Then, the first face of the first substrate and a deposition surface of a second substrate are arranged to be adjacent to or in contact with each other, irradiation with light having a wavelength, which is absorbed by the light-absorbing layer is conducted from a second face side of the first substrate, to heat the organic compound, and thereby at least part of the organic compound is formed as a film on the deposition surface of the second substrate.02-11-2010
20100035370INTEGRATED MILLIMETER WAVE ANTENNA AND TRANSCEIVER ON A SUBSTRATE - A semiconductor chip integrating a transceiver, an antenna, and a receiver is provided. The transceiver is formed on a front side of a semiconductor substrate. At least one through substrate via provides electrical connection between the transceiver and the backside of the semiconductor substrate. The antenna, which is connected to the transceiver, is formed in a dielectric layer on the front side. The reflector plate is connected to the through substrate via, and is formed on the backside. The separation between the reflector plate and the antenna is about the quarter wavelength of millimeter waves, which enhances radiation efficiency of the antenna. An array of through substrate trenches may be formed and filled with a dielectric material to reduce the effective dielectric constant of the material between the antenna and the reflector plate, thereby reducing the wavelength of the millimeter wave and enhance the radiation efficiency.02-11-2010
20080311690ELIMINATE RELEASE ETCH ATTACK BY INTERFACE MODIFICATION IN SACRIFICIAL LAYERS - Methods of making a microelectromechanical system (MEMS) device are described. In some embodiments, the method includes forming a sacrificial layer over a substrate, treating at least a portion of the sacrificial layer to form a treated sacrificial portion, forming an overlying layer over at least a part of the treated sacrificial portion, and at least partially removing the treated sacrificial portion to form a cavity situated between the substrate and the overlying layer, the overlying layer being exposed to the cavity.12-18-2008
20120107981SEMICONDUCTOR LIGHT SOURCES, SYSTEMS, AND METHODS - A light-emitting diode includes a substrate, a lower cladding layer, an active layer having a quantum well of a thirty percent concentration of indium on the lower cladding layer, and an upper cladding layer. A method of manufacturing light-emitting diodes includes forming a lower cladding layer on a substrate, forming an active layer on the lower cladding layer such that the active layer has a quantum well of thirty percent indium, forming an upper cladding layer on the active layer, and forming a metal cap on the upper cladding layer.05-03-2012
20120107980LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - A liquid crystal display device and a method of fabricating the same is disclosed, to provide a liquid crystal display device to simplify the process and decrease the fabrication cost, the liquid crystal display device includes a first substrate having a color filter and a second substrate having a thin film transistor, wherein the first and second substrates face each other, a first passivation film formed on the thin film transistor, and a first column spacer formed integrally with the first passivation film.05-03-2012
20120107979METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE - A method for manufacturing a light emitting device is disclosed. The disclosed method includes forming a first-conductivity-type semiconductor layer over a first substrate such that a first surface of the first-conductivity-type semiconductor layer is adjacent to the first substrate, disposing a second substrate on a second surface of the first-conductivity-type semiconductor layer opposite the first surface, separating the first substrate, disposing a third substrate on the first surface, separating the second substrate, and forming an active layer and a second-conductivity-type semiconductor layer over the second surface. In accordance with the method, it is possible to use a relatively inexpensive substrate. As a semiconductor layer is formed over a Ga-face of a gallium nitride semiconductor layer, an increase in light emission efficiency is achieved.05-03-2012
20120107978METHOD OF FABRICATING FLEXIBLE DISPLAY DEVICE - A method of fabricating a flexible display device includes: forming a plastic substrate on a carrier substrate, the plastic substrate including an active area and a non-active area surrounding the active area; forming an array element on the carrier substrate, the array element including a plurality of layers and having an average adhesion force among the plurality of layers; forming a first film on the array element, the first film having a first adhesion force; attaching a flexible printed circuit board to the plastic substrate; forming a second film on the first film, the second film having a second adhesion force greater than the first adhesion force; and detaching the plastic substrate from the carrier substrate.05-03-2012
20090148971FORMING METHOD OF CONTACT HOLE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, LIQUID CRYSTAL DISPLAY DEVICE AND EL DISPLAY DEVICE - When forming a contact hole by a conventional manufacturing step of a semiconductor device, a resist is required to be formed on almost entire surface of a substrate so as to be applied on a film other than an area in which a contact hole is to be formed, leading to drastically reduced throughput. According to a forming method of a contact hole and a manufacturing method of a semiconductor device, an EL display device and a liquid crystal display device of the invention, an island shape organic film is selectively formed over a semiconductor layer, a conductive layer or an insulating layer, and an insulating film is formed around the island shape organic film to form a contact hole. Therefore, a conventional patterning using a resist is not required, and high throughput and low cost can be achieved.06-11-2009
20100029027SURFACE EMITTING LASER MANUFACTURING METHOD, SURFACE EMITTING LASER ARRAY MANUFACTURING METHOD, SURFACE EMITTING LASER, SURFACE EMITTING LASER ARRAY, AND OPTICAL APPARATUS INCLUDING SURFACE EMITTING LASER ARRAY - Provided is a surface emitting laser manufacturing method, etc., which reduces process damage occurring to a surface relief structure, enabling stable provision of a single transverse mode characteristic. Provided is a method including a surface relief structure for controlling a reflectance in a light emitting portion of an upper mirror, the surface relief structure including a stepped structure, includes: forming a resist pattern including a pattern for forming a mesa structure and a pattern for forming a stepped structure, on or above the upper mirror, and performing first-phase etching for etching the surface layer of the upper mirror to determine the horizontal position of the stepped structure; forming a current confining structure after the performing first-phase etching; and performing second-phase etching for further etching the area that the first-phase etching has been performed, to determine the depth position of the stepped structure, after the forming a current confining structure.02-04-2010
20090148970METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - To provide a manufacturing method of a highly reliable TFT, by which a more refined pattern can be formed through a process using four or three masks, and a semiconductor device. A channel-etched bottom gate TFT structure is adopted in which a photoresist is selectively exposed to light by rear surface exposure utilizing a gate wiring to form a desirably patterned photoresist, and further, a halftone mask or a gray-tone mask is used as a multi-tone mask. Further, a step of lifting off using a halftone mask or a gray-tone mask and a step of reflowing a photoresist are used.06-11-2009
20080311692Top Emission Organic Light Emitting Diode Display Using Auxiliary Electrode to Prevent Voltage Drop of Upper Electrode and Method of Fabricating the Same - An organic light emitting diode (OLED) display. The OLED display includes: a lower electrode formed on a layer on an insulating substrate having a thin film transistor. The lower electrode is electrically connected to the thin film transistor. An auxiliary electrode is formed on the same layer as the lower electrode, and a pixel defining layer is formed on edges of the lower electrode, thereby defining an opening which exposes a portion of the lower electrode. An organic layer is formed on the portion of the lower electrode exposed by the opening, and an upper electrode is formed on an entire surface of the insulating substrate and electrically connected to the auxiliary electrode. An edge of the auxiliary electrode may have a taper angle of at least 90°.12-18-2008
20100120183Method of fabricating light-emitting apparatus with improved light extraction efficiency and light-emitting apparatus fabricated using the method - Provided are a method of fabricating a light-emitting apparatus with improved light extraction efficiency and a light-emitting apparatus fabricated using the method. The method includes: preparing a monocrystalline substrate; forming an intermediate structure on the substrate, the intermediate structure comprising a light-emitting structure which comprises a first conductive pattern of a first conductivity type, a light-emitting pattern, and a second conductive pattern of a second conductivity type stacked sequentially, a first electrode which is electrically connected to the first conductive pattern, and a second electrode which is electrically connected to the second conductive pattern; forming a polycrystalline region, which extends in a horizontal direction, by irradiating a laser beam to the substrate in the horizontal direction such that the laser beam is focused on a beam-focusing point within the substrate; and cutting the substrate in the horizontal direction along the polycrystalline region.05-13-2010
20100120185METHOD OF MANUFACTURING ORGANIC EL ELEMENT, ORGANIC EL ELEMENT, AND ORGANIC EL DISPLAY DEVICE - A method of manufacturing an organic EL element according to the present invention comprises the steps of forming pixel electrodes (05-13-2010
20120190142LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-type compound semiconductor layer, and a p-type electrode sequentially formed on a first region of the n-type compound semiconductor layer, and an n-type electrode formed on a second region separated from the first region of the n-type compound semiconductor layer, wherein the p-type electrode comprises first and second electrodes, each electrode having different resistance and reflectance.07-26-2012
20120190141METHOD FOR MANUFACTURING POLYCHROMATIC LIGHT EMITTING DIODE DEVICE HAVING WAVELENGTH CONVERSION LAYER MADE OF SEMICONDCUTOR - A method for manufacturing a polychromatic light emitting diode device, comprising steps of providing an epitaxial substrate and forming a multiple semiconductor layer on the epitaxial substrate, wherein the multiple semiconductor layer comprises an n-type semiconductor layer, a p-type semiconductor layer and an active layer. The active layer emits light of a first wavelength. Thereafter a first wavelength conversion layer is formed on the multiple semiconductor layer. The first wavelength conversion layer is made of semiconductor and absorbs a portion of the light of a first wavelength and emits light of a second wavelength, wherein the second wavelength is longer than the first wavelength.07-26-2012
20120088322DICING-FREE LED FABRICATION - Provided is a method of fabricating a light-emitting diode (LED) device. The method includes providing a substrate having opposite first and second sides. A semiconductor layer is formed on the first side of the substrate. The method includes forming a photoresist layer over the semiconductor layer. The method includes patterning the photoresist layer into a plurality of photoresist components. The photoresist components are separated by openings. The method includes filling the openings with a plurality of thermally conductive components. The method includes separating the semiconductor layer into a plurality of dies using a radiation process that is performed to the substrate from the second side. Each of the first regions of the substrate is aligned with one of the conductive components.04-12-2012
20120034720Vertical cavity surface emitting laser and method of manufacturing the same - A Vertical Cavity Surface Emitting Laser capable of decreasing the lowering of the yield due to displacement and separation of a pedestal without enormous increase of the threshold value and more difficult manufacturing process is provided. A base of a mesa spreads over the top face of a lower DBR layer. The base is a non-flat face in which end faces of a plurality of layers are exposed. The non-flat face is generated due to etching unevenness in forming the mesa, and is in a state of a step in which end faces of a low-refractive index layer and a high-refractive index layer included in the lower DBR layer are alternatively exposed. At least one of the layers exposed in the non-flat face in the plurality of low-refractive index layers included in the lower DBR layer is an oxidation inhibition layer.02-09-2012
20100120184OPTOELECTRONIC DEVICE STRUCTURE - The application is related to an optoelectronic device structure including a stress-balancing layer. The optoelectronic device structure comprises a high thermal conductive substrate, a stress-balancing layer on the high thermal conductive substrate, a reflective layer on the stress-balancing layer and an epitaxial structure on the reflective layer.05-13-2010
20090239321TRANSISTOR ARRAY SUBSTRATE AND DISPLAY PANEL - A transistor array substrate includes a plurality of driving transistors which are arrayed in a matrix on a substrate. The driving transistor has a gate, a source, a drain, and a gate insulating film inserted between the gate, and the source and drain. A plurality of signal lines are patterned together with the gates of the driving transistors and arrayed to run in a predetermined direction on the substrate. A plurality of supply lines are patterned together with the sources and drains of the driving transistors and arrayed to cross the signal lines via the gate insulating film. The supply line is electrically connected to one of the source and the drain of the driving transistor. A plurality of feed interconnections are formed on the supply lines along the supply lines, respectively.09-24-2009
20100081221SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING TEXTURED STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A semiconductor light emitting diode having a textured structure and a method of manufacturing the same are provided. The semiconductor light emitting diode includes a first semiconductor layer formed into a textured structure, an intermediate layer formed between the textured structures of the patterned first semiconductor layer, and a second semiconductor layer, an active layer, and a third semiconductor layer sequentially formed on the first semiconductor layer and the intermediate layer.04-01-2010
20090263921Thin film transistor substrate with color filter and method for fabricting the same - A color filter-on-thin film transistor substrate includes gate data lines crossing each other and defining pixel areas, thin film transistors is located at crossings of gate and data lines, pixel electrodes connected to the thin film transistors and formed within the pixel areas, and stripe-shaped color filters overlapping a plurality of pixel areas and oriented parallel to one of the gate and data lines.10-22-2009
20090263922Reflective Positive Electrode And Gallium Nitride-Based Compound Semiconductor Light-Emitting Device Using The Same - A gallium nitride-based compound semiconductor light-emitting device which has a highly reflective positive electrode that has high reverse voltage and excellent reliability with low contact resistance to the p-type gallium nitride-based compound semiconductor layer. The reflective positive electrode for a semiconductor light-emitting device comprises a contact metal layer adjoining a p-type semiconductor layer, and a reflective layer on the contact metal layer, wherein the contact metal layer is formed of a platinum group metal or an alloy containing a platinum group metal, and the reflective layer is formed of at least one metal selected from the group consisting of Ag, Al, and alloys containing at least one of Ag and Al. Also disclosed is a production method of the reflective positive electrode.10-22-2009
20100124797GaN COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME - The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present invention provides a vertical GaN LED capable of improving the characteristics of a horizontal LED by means of a metallic protective film layer and a metallic support layer. According to the present invention, a thick metallic protective film layer with a thickness of at least 10 microns is formed on the lateral and/or bottom sides of the vertical GaN LED to protect the element against external impact and to easily separate the chip. Further, a metallic substrate is used instead of a sapphire substrate to efficiently release the generated heat to the outside when the element is operated, so that the LED can be suitable for a high-power application and an element having improved optical output characteristics can also be manufactured. A metallic support layer is formed to protect the element from being distorted or damaged due to impact. Furthermore, a P-type electrode is partially formed on a P—GaN layer in a mesh form to thereby maximize the emission of photons generated in the active layer toward the N—GaN layer.05-20-2010
20100124794METHOD FOR MANUFACTURING SEMICONDUCTOR APPARATUS AND MOLD ASSEMBLY FOR THE SAME - A method for manufacturing a semiconductor apparatus which does not hamper the miniaturization of products and can simplify the manufacturing process without the optical performance deteriorating is described. Furthermore, a mold assembly for use in molding a semiconductor apparatus can be provided. A substrate can be set within a lower mold, wherein a plurality of optical semiconductor elements are mounted on the substrate at predetermined intervals. Primary transfer molding using the lower mold and a primary upper mold can be carried out to form a plurality of frame bodies so as to surround the respective optical semiconductor elements. While the substrate is set on the lower mold, secondary transfer molding using the lower mold and the secondary upper mold can be carried out to form the light-transmitting portions so as to cover the optical semiconductor elements and the frame bodies on the substrate. Then, a multi-piece product of semiconductor apparatuses can be removed from the molds and cut by a dicer to separate the individual semiconductor apparatuses.05-20-2010
20090093074Light Emission From Silicon-Based Nanocrystals By Sequential Thermal Annealing Approaches - A method for enhancing photoluminescence includes providing a film disposed over a substrate, the film including at least one of a semiconductor and a dielectric material. Light emission may be activated by thermal annealing post growth treatments when thin film layers of SiO04-09-2009
20120295377METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE - According to one embodiment, a method is disclosed for manufacturing a nitride semiconductor device. The method can include removing a growth substrate from a structure body by using a first treatment material. The structure body has the growth substrate, a buffer layer formed on the growth substrate, and the nitride semiconductor layer formed on the buffer layer. A support substrate is bonded to the nitride semiconductor layer. The method can include reducing thicknesses of the buffer layer and the nitride semiconductor layer by using a second treatment material different from the first treatment material after removing the growth substrate.11-22-2012
20100124796LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE - Techniques are provided for manufacturing a light-emitting device having high internal quantum efficiency, consuming less power, having high luminance, and having high reliability. The techniques include forming a conductive light-transmitting oxide layer comprising a conductive light-transmitting oxide material and silicon oxide, forming a barrier layer in which density of the silicon oxide is higher than that in the conductive light-transmitting oxide layer over the conductive light-transmitting oxide layer, forming an anode having the conductive light-transmitting oxide layer and the barrier layer, heating the anode under a vacuum atmosphere, forming an electroluminescent layer over the heated anode, and forming a cathode over the electroluminescent layer. According to the techniques, the barrier layer is formed between the electroluminescent layer and the conductive light-transmitting oxide layer.05-20-2010
20110171765MULTI-FIELD ARRANGING METHOD OF LED CHIPS UNDER SINGLE LENS - A multi-field arranging method of LED chips under a single lens includes the steps of: setting a first concentric circle on a bottom of a hemispherical lens, wherein the first concentric circle is centered at an axis of the hemispherical lens; and equidistantly arranging at least one first color chip, at least one second color chip and at least one third color chip on the first concentric circle in sequence. The present invention allows the color chips to present symmetrical light patterns through the hemispherical lens, thereby obtaining a light field with evener color mixture.07-14-2011
20090275156Light-emitting gallium nitride-based III-V group compound semiconductor device and manufacturing method thereof - A light-emitting gallium nitride-based III-V group compound semiconductor device and a manufacturing method thereof are disclosed. The light emitting device includes a substrate, a n-type semiconductor layer over the substrate, an active layer over the n-type semiconductor layer, a p-type semiconductor layer over the active layer, a conductive layer over the p-type semiconductor layer, a first electrode disposed on the conductive layer and a second electrode arranged on exposed part of the n-type semiconductor layer. A resistant reflective layer or a contact window is disposed on the p-type semiconductor layer, corresponding to the first electrode so that current passes beside the resistant reflective layer or by the contact window to the active layer for generating light. When the light is transmitted to the conductive layer for being emitted, it is not absorbed or shielded by the first electrode. Thus the current is distributed efficiently over the conductive layer. Therefore, both LED brightness and efficiency are improved. Moreover, adhesion between the conductive layer and the p-type semiconductor layer is improved so that metal peel-off problem during manufacturing processes can be improved.11-05-2009
20090142864METHOD FOR MANUFACTURING THIN FILM TRANSISTOR ARRAY SUBSTRATE - A method for manufacturing a thin film transistor (TFT) array substrate needs only or even less than six mask processes for manufacturing the TFT array substrate integrated with a color filter pattern. Therefore, the manufacturing method is simpler and the manufacturing cost is reduced. In addition, the manufacturing method needs not to form a contact window in a relative thick film layer such as a planarization layer or a color filter layer, so as to connect the pixel electrode to the source/drain. Thus, the difficulty of the manufacturing process is effectively reduced.06-04-2009
20090286338Methods for depositing nanomaterial, methods for fabricating a device, methods for fabricating an array of devices and compositions - A method comprising depositing an ink comprising a nanomaterial, a material capable of transporting charge, and a liquid vehicle from a micro-dispenser onto a layer of a device is disclosed. A method comprising depositing an ink comprising a nanomaterial, a material capable of transporting charge, and a liquid vehicle from a micro-dispenser onto a second material capable of transporting charge in a predetermined arrangement is also disclosed. In certain preferred embodiments, the nanomaterial comprises semiconductor nanocrystals. In certain preferred embodiments, a micro-dispenser comprises an inkjet printhead. Methods for fabricating devices including a nanomaterial and method for fabricating an array of devices including a nanomaterial are also disclosed. An ink composition including a nanomaterial, a material capable of transporting charge, and a liquid vehicle is also disclosed.11-19-2009
20090104721Deposition Method and Method for Manufacturing Light Emitting Device - An object is to provide a deposition method by which a film having a desired shape can be formed with high productivity. Further, a method for manufacturing a light emitting device by which a light emitting device having high definition can be manufactured with high productivity is provided. Specifically, even in the case of using a large-sized substrate, a method for manufacturing a light emitting device having high definition is provided. By using a deposition target substrate and a shadow mask having a smaller area than the deposition target substrate, the deposition target substrate and the shadow mask are aligned with each other, and an evaporation material is deposited on at least part of the deposition target substrate through a plurality of deposition steps. As an evaporation source, a light absorption layer and a supporting substrate having the evaporation material is preferably used.04-23-2009
20100099210Method for Fabricating a Polymer L.E.D. - A light-emissive device is prepared by depositing a polymer layer on a substrate. The deposition process utilizes a formulation comprising a conjugated polymer dissolved in a solvent, the solvent including a trialkyl-substituted aromatic hydrocarbon wherein at least two of the alkyl substituents are ortho to one another. The deposition of the polymer layer on the substrate may be accomplished by an ink-jet method.04-22-2010
20100099209MULTI-LEVEL INTEGRATED PHOTONIC DEVICES - A laser and electroabsorption modulator (EAM) are monolithically integrated through an etched facet process. Epitaxial layers on a wafer include a first layer for a laser structure and a second layer for an EAM structure. Strong optical coupling between the laser and the EAM is realized by using two 45-degree turning mirrors to route light vertically from the laser waveguide to the EAM waveguide. A directional angled etch process is used to form the two angled facets.04-22-2010
20090275155Method of fabrication a liquid crystal display device - The present invention relates to a transflective thin film transistor substrate and method of fabricating the same that is adaptive for simplifying its process. The liquid crystal display device includes: first and second substrates; a gate line on the first substrate; a gate insulating film on the first substrate; a data line crossing the gate line to define a pixel area; a thin film transistor connected to the gate line and the data line; an organic insulating film on the gate line, the data line and the thin film transistor, and having a transmission hole in the pixel area; a pixel electrode on the organic insulating film of the pixel area via the transmission hole and connected to the thin film transistor; and a reflective electrode on the pixel electrode having a same edge part as the pixel electrode or an edge part located at inner side from an edge part of the pixel electrode and exposing the pixel electrode of the transmission hole.11-05-2009
20090275154Method of fabricating light emitting device - A light emitting device wafer is fabricated, having a light emitting layer section, composed of AlGaInP, based on a double heterostructure and a GaP light extraction layer disposed on the light emitting layer portion, having a first main surface thereof appearing on the first main surface of the wafer, so as that a P-rich off-angled {100} surface, having a higher existence rate of P atoms than an exact {100} surface, appears on the first main surface the GaP light extraction layer. The main first surface of the GaP light extraction layer is etched with an etching solution FEA so as to form surface roughening projections. Therefore, it provides a method of fabricating a light emitting device capable of applying surface roughening easily to the GaP light extraction surface having the {100} surface, off-angled to be P-rich, as a main surface thereof.11-05-2009
20090280590ORGANIC LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - An organic light emitting device (OLED) and a method of fabricating the same are provided, wherein the OLED includes a thin film transistor having a gate electrode, and source and drain electrodes on a substrate; a triple-layered pixel electrode connected to one of the source and drain electrodes through a via-contact hole formed in an insulating layer on the substrate, and having a lower pixel electrode, a reflective layer pattern and an upper pixel electrode; an organic layer disposed on the upper pixel electrode and having at least an emission layer; and an opposite electrode disposed on the organic layer.11-12-2009
20090286339LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME - A light emitting diode having high light extraction efficiency and a method of manufacturing the same are provided. The LED includes a semiconductor multiple layer including an active layer; a transparent electrode layer formed on the semiconductor multiple layer; and refraction field unit embedded in the transparent electrode layer and formed of a material having a different refractive index than the transparent electrode layer. The method of manufacturing the LED includes: crystallizing and growing a semiconductor multiple layer having an active layer on a substrate; evaporating a first transparent electrode layer onto the semiconductor multiple layer; forming a plurality of grooves in the first transparent electrode layer by patterning and etching the first transparent electrode layer; and evaporating a second transparent electrode layer onto the first transparent electrode layer at an angle to the grooves to form cavities filled with air between the first transparent electrode layer and the second transparent electrode layer.11-19-2009
20100279444ORGANIC ELECTRO-LUMINESCENCE DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME - An organic electro-luminance display device includes a first substrate and a second substrate; an array element on the first substrate, the array element including at least one thin film transistor (TFT) in each sub-pixel; a first electrode on the second substrate; a buffer on the first electrode including a first buffer at an outer region partitioning each sub-pixel and a second buffer at a region including a stepped portion of the first buffer, wherein a undercut structure is formed by the first and second buffers; an organic electro-luminescent layer in each sub-pixel partitioned by the second buffer; a second electrode formed on the organic electro-luminescent layer; and a conductive spacer for electrically connecting the TFT to the second electrode.11-04-2010
20090042326DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one aspect of the present invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide is applied as an electrode on the side of injecting a hole (a hole injection electrode; an anode) instead of the conventional conductive transparent oxide layer such as ITO. In addition, according to another aspect of the invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide, each of which content is different, is applied as a hole injection electrode. Preferably, silicon or a silicon oxide concentration of the conductive layer on the side where it is connected to a TFT ranges from 1 atomic % to 6 atomic % and a silicon or silicon oxide concentration on the side of a layer containing an organic compound ranges from 7 atomic % to 15 atomic %.02-12-2009
20110171764ENCAPSULATED ELECTRONIC DEVICE AND METHOD OF MANUFACTURING - An encapsulated electronic device is described comprising: 07-14-2011
20090269870LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE AND SEMICONDUCTOR DEVICE - It is an object of the present invention to provide a semiconductor device, in particular, a light emitting element which can be easily manufactured with a wet method. One feature of the invention is a light emitting device including a transistor and a light emitting element. In the light emitting element, an organic layer, a light emitting layer, and a second electrode are sequentially formed over a first electrode, and the transistor is electrically connected to the light emitting element through a wiring. Here, the wiring contains aluminum, carbon, and titanium. The organic layer is formed by a wet method. The first electrode which is in contact with the organic layer is formed from indium tin oxide containing titanium oxide.10-29-2009
20090269866Method of manufacturing organic light emitting display - A method of manufacturing an organic light emitting display is disclosed. The method includes forming a first electrode and a bank layer including an opening area exposing the first electrode on a target substrate, forming a medium substrate including an organic layer and an absorbing layer on the target substrate, forming a mask including an opening corresponding to the opening area of the bank layer on the medium substrate, emitting light on the medium substrate through the mask and transferring the organic layer on a portion of the first electrode exposed by the bank layer to form an organic light emitting layer on the target substrate, and forming a second electrode on the organic light emitting layer.10-29-2009
20110269254THIN-FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING SAME AND DISPLAY APPARATUS HAVING SAME - Contamination is blocked from material of a color filter layer provided on a thin-film transistors (TFT) supporting substrate by sealing over the color filter layer with an inorganic insulating layer. During mass production manufacture, a plasma surface cleaning step is employed after the color filter layer is deposited but before the inorganic insulating layer is deposited. A low temperature CVD process is used to deposit the inorganic insulating layer with a substantially uniform thickness conformably over the color filter layer including conformably into openings provided through the color filter layer.11-03-2011
20100279445TRANSFLECTIVE TYPE DIODE SUBSTRATE AND A METHOD FOR FABRICATION THE SAME - A transflective diode substrate for a liquid crystal display device, includes: a reflective zone including a diode having a scan electrode, an insulating pattern on the scan electrode and a pixel electrode over the scan electrode, organic patterns around the diode, and a reflection electrode over the organic patterns; and a transmissive zone adjacent to the reflective zone; wherein the pixel electrode is formed in the reflective zone and the transmissive zone.11-04-2010
20120288973DISPENSING METHOD AND DISPENSING APPARATUS - Disclosed are a dispensing method and a dispensing apparatus for dispensing a coating material over an object to be applied by a dispensing device within a dispensing chamber including a top plate, a bottom plate and side plates, in which a fresh air inlet and an exhaust outlet are formed in an upper portion and a lower portion of the dispensing chamber, respectively; at least a discharge hole of the dispensing device is exposed to within the upper portion of the dispensing chamber; 11-15-2012
20080274572METHOD OF MAKING HIGH EFFICIENCY UV VLED ON METAL SUBSTRATE - A method of fabricating ultraviolet (UV) vertical light-emitting diode (VLED) structures composed of AlInGaN or AlGaN with increased crystalline quality and a faster growth rate when compared to conventional AlInGaN or AlGaN LED structures is provided. This may be accomplished by forming a sacrificial GaN layer above a carrier substrate, and then depositing the light-emitting diode (LED) stack above the sacrificial GaN layer. The sacrificial GaN layer may then be removed in subsequent processing steps.11-06-2008
20080293174Method for forming LED array - A method for forming LED array is disclosed herein. First, a LED wafer, a substrate having a LED epitaxial layer thereon, is cut into a plurality of LED sticks. Then, each space layer is bonded between every two LED sticks to form a LED array.11-27-2008
20080213929Light Emitting Device - An objective is to increase the reliability of a light emitting device structured by combining TFTs and organic light emitting elements. A TFT (09-04-2008
20080311691Method of Manufacturing Image Sensor - Provided is a method of manufacturing an image sensor. A microlens of inorganic material can be formed on a substrate by forming a seed microlens having a top surface with height differences, and then blanket etching the seed microlens to form a dome shaped microlens having a curvature following the height differences of the seed microlens. The height differences in the top surface of the seed microlens can be created by implanting nitrogen at different depths into an inorganic layer to form ion implantation regions, and removing the ion implantation regions from the inorganic layer.12-18-2008
20120045858CONTACT FOR A SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region. A p-electrode is disposed on a portion of the p-type region. The p-electrode includes a reflective first material in direct contact with a first portion of the p-type region and a second material in direct contact with a second portion of the p-type region adjacent to the first portion. The first material and second material are formed in planar layers of substantially the same thickness.02-23-2012
20110143466METHOD OF FORMING VERTICAL STRUCTURE LIGHT EMITTING DIODE WITH HEAT EXHAUSTION STRUCTURE - The present invention is to provide a method of forming a vertical structure light emitting diode with a heat exhaustion structure. The method includes steps of: a) providing a sapphire substrate; b) depositing a number of protrusions on the sapphire substrate, each of which has a height of p; c) forming a buffer layer having a number of recesses, each of which has a depth of q smaller than p so that when the protrusions are accommodated within the recesses of the buffer layer, a number of gaps are formed therebetween for heat exhaustion; d) growing a number of luminescent layers on the buffer layer, having a medium layer formed between the luminescent layers and the buffer layer; e) etching through the luminescent layers and the buffer layer to form a duct for heat exhaustion; f) removing the sapphire substrate and the protrusions by excimer laser lift-off (LLO); g) roughening the medium layer; and h) depositing electrodes on the roughened medium layer.06-16-2011
20090191652Pixel structure and method for manufacturing the same - A pixel structure includes a scan line, a data line, an active element, a first passivation layer, a second passivation layer and a pixel electrode. The data line includes a first data metal segment and a second data metal layer. The active element includes a gate electrode, an insulating layer, a channel layer, a source and a drain. The channel layer is positioned on the insulating layer above the gate electrode. The source and the drain are positioned on the channel layer. The source is coupled to the data line. The first passivation layer and the second passivation layer cover the active element and form a first contact hole to expose a part of the drain. The second passivation layer covers a part edge of the drain. The pixel electrode is disposed across the second passivation layer and coupled to the drain via the first contact hole.07-30-2009
20090029497SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - The invention provides a semiconductor light-emitting device with II-V group (or II-IV-V group) compound contact layer and a method of fabricating the same. The semiconductor light-emitting device according to a preferred embodiment of the invention includes a substrate, a first conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second conductive type semiconductor material layer, a H-V group (or II-W-V group) compound contact layer, a transparent conductive layer, and a second electrode. The existence of the II-V group (or II-IV-V group) compound contact layer improves the ohmic contact between the second conductive type semiconductor material layer and the transparent conductive layer.01-29-2009
20090029496RADIATION-EMITTING SEMICONDUCTOR BODY FOR A VERTICALLY EMITTING LASER AND METHOD FOR PRODUCING SAME - The present invention concerns a radiation-emitting semiconductor body with a vertical emission direction, a radiation-generating active layer, and a current-conducting layer having a current-blocking region and a current-permeable region, the semiconductor body being provided for a vertically emitting laser with an external resonator, and the external resonator having a defined resonator volume that overlaps with the current-permeable region.01-29-2009
20090061552LIGHT EMITTING APPARATUS AND METHOD FOR THE SAME - A light emitting apparatus includes a patterned conductive layer, a light emitting component, and a first light diffusion layer, wherein the light emitting component is disposed on the patterned conductive layer and the light emitting component and the patterned conductive layer are embedded into the first light diffusion layer. The method for manufacturing the light emitting apparatus is also disclosed.03-05-2009
20090075411MANUFACTURING APPARATUS - A manufacturing apparatus is provided, which can improve a utilization efficiency of an evaporation material, reduce manufacturing costs of a light emitting device having an organic light emitting element, and shorten manufacturing time necessary to manufacture a light emitting device. According to the present invention, a multi-chamber manufacturing apparatus having plural film forming chambers includes a first film forming chamber for subjecting a first substrate to evaporation and a second film forming chamber for subjecting a second substrate to evaporation. In each film forming chamber, plural organic compound layers are laminated, thereby improving the throughput. Further, it is possible that the respective substrates in the plural film forming chambers are subjected to evaporation in the same manner in parallel, while another film forming chamber undergoes cleaning.03-19-2009
20100151605FULL COLOR ORGANIC ELECTROLUMINESCENT DEVICE AND METHOD FOR FABRICATING THE SAME - The present invention relates to a full color organic electroluminescent device and a method for fabricating the same and provides a full color organic electroluminescent device. The invention reduces misalignment errors caused by fine patterning of the emitting layer by reducing the steps of the fine patterning process. In particular, the blue emitting layer functions as a hole inhibition layer which results in superior color purity and improved stability for the color organic electroluminescent device. The use of such a blue emitting layer also reduces the manufacturing steps. The device comprises a substrate; a first electrode pattern formed on the substrate; a red emitting layer formed by patterning a red emitting material on a red pixel region of the first electrode pattern and a green emitting layer formed by patterning a green emitting material on a green pixel region of the first electrode pattern. A blue emitting layer is applied over the entire substrate, over the upper parts of the red and green emitting layers and a second electrode is formed on an upper part of the blue emitting layer.06-17-2010
20090186436ARRAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME AND LIQUID CRYSTAL DISPLAY APPARATUS HAVING THE SAME - An array substrate includes a plate, a switching element, an insulating layer and a pixel electrode. The plate includes a pixel region, and the switching element is disposed on the plate. The insulating layer is disposed on the plate to include an opening for a multi-domain disposed in the pixel region and a contact hole. An electrode of the switching element is partially exposed through the contact hole. The pixel electrode is disposed on the insulating layer corresponding to the pixel region, an inner surface of the opening for the multi-domain and an inner surface of the contact hole so that the pixel electrode is electrically connected to the electrode of the switching element. Therefore, the viewing angle and the image display quality of the LCD apparatus are improved, and a manufacturing process is simplified.07-23-2009
20090137074Method of manufacturing display device - A method of manufacturing a display device includes: preparing a substrate including a first area and a second area, forming a first layer on the first area and the second area, forming a second layer on the first layer of the first area, respectively forming a first electrode layer on the second layer of the first area and the first layer of the second area, forming a reflective layer on the first electrode layer of the first area, and forming a second electrode layer on the reflective layer.05-28-2009
20090137075Method of manufacturing vertical light emitting diode - Provided is a method of manufacturing a vertical LED, the method including the steps of: preparing a sapphire substrate; forming a light emitting structure in which an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer are sequentially laminated on the sapphire substrate; forming a p-electrode on the p-type nitride semiconductor layer; forming a structure support layer on the p-electrode; removing the sapphire substrate through an LLO (laser lift-off) process; isolating the light emitting structure into unit LED elements through an ISO (isolation) process; and forming an n-electrode on each of the n-type nitride semiconductor layers of the isolated light emitting structures.05-28-2009
20090280589Method for Manufacturing Light-Emitting Device - An object is to provide a method for manufacturing a light-emitting device with high definition, high light-emitting characteristics, and the long lifetime by employing a method in which a desired evaporation pattern can be formed and an excess evaporation of a material layer which is to be the transfer layer is prevented and in which deterioration of the material or the like is hard to occur in a transfer step. This is a method for manufacturing a light-emitting device, in which irradiation with first light is performed to pattern a material layer over a first substrate which is an evaporation donor substrate and irradiation with second light is performed to evaporate the material layer patterned onto a second substrate which is a deposition target substrate.11-12-2009
20100151602LASER ROUGHENING TO IMPROVE LED EMISSIONS - An improved method of forming a LED with a roughened surface is described. Traditional methods of roughening a LED surface utilizes strong etchants that require sealing or protecting exposed areas of the LED. The described method uses a focused laser to separate the LED from the substrate, and a second laser to roughen the LED surface thereby avoiding the use of strong etchants. A mild etchant may be used on the laser roughened LED surface to remove unwanted metals.06-17-2010
20090186435SURFACE ROUGHENING METHOD FOR LIGHT EMITTING DIODE SUBSTRATE - The present invention discloses a surface roughening method for an LED substrate, which uses a grinding technology and an abrasive paper of from No. 300 to No. 6000 to grind the surface of a substrate to form a plurality of irregular concave zones and convex zones on the surface of the substrate. Next, a semiconductor light emitting structure is formed on the surface of the substrate. The concave zones and convex zones can scatter and diffract the light inside LED, reduce the horizontally-propagating light between the substrate and the semiconductor layer, decrease the probability of total reflection and promote LED light extraction efficiency.07-23-2009
20090017568Semiconductor device, electronic device and method for manufacturing semiconductor device - A semiconductor device of the present invention is manufactured by the following steps: forming a single-crystal semiconductor layer over a substrate having an insulating surface; irradiating a region of the single-crystal semiconductor layer with laser light; forming a circuit of a pixel portion using a region of the single-crystal semiconductor layer which is not irradiated with the laser light; and forming a driver circuit for driving the circuit of the pixel portion using the region of the single-crystal semiconductor layer which is irradiated with the laser light. Thus, a semiconductor device using a single-crystal semiconductor layer which is suitable for a peripheral driver circuit region and a single-crystal semiconductor layer which is suitable for a pixel region can be provided.01-15-2009
20090221108Miniature optical element for wireless bonding in an electronic instrument - A method of manufacturing an optical element including the steps of: forming a through hole in a semiconductor element which has an optical section and an electrode electrically connected to the optical section; and forming a conductive layer extending from a first surface of the semiconductor element on which the optical section is formed, through an inner wall surface of the through hole, to a second surface opposite to the first surface.09-03-2009
20090075412VERTICAL GROUP III-NITRIDE LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A vertical group III-nitride light emitting device and a manufacturing method thereof are provided. The light emitting device comprises: a conductive substrate; a p-type clad layer stacked on the conductive substrate; an active layer stacked on the p-type clad layer; an n-doped Al03-19-2009
20090053842Thin Film Transistor Array Panel And Methods For Manufacturing The Same - Disclosed is a simplified method for manufacturing a liquid crystal display. A gate wire including a gate line, a gate pad, and a gate electrode are formed on a substrate. A gate insulating layer, a semiconductor layer, and an ohmic contact layer are sequentially deposited, and a photoresist layer is coated thereon. The photoresist layer is exposed to light through a mask and developed to form a photoresist pattern. At this time, a first portion of the photoresist pattern which is located between the source electrode and the drain electrode is thinner than a second portion which is located on the data wire, and the photoresist layer is totally removed on other parts. The thin portion is made by controlling the amount of irradiating light or by a reflow process to form a thin portion, and the amount of light is controlled by using a mask that has a slit, a small pattern smaller than the resolution of the exposure device, or a partially transparent layer. Next, the exposed portions of conductor layer are removed by wet etch or dry etch, and thereby the underlying ohmic contact layer is exposed. Then the exposed ohmic contact layer and the underlying semiconductor layer are removed by dry etching along with the first portion of the photoresist layer. The residue of the photoresist layer is removed by ashing. Source/drain electrodes are separated by removing the portion of the conductor layer at the channel and the underlying ohmic contact layer pattern. Then, the second portion of the photoresist layer is removed, and red, green, and blue color filters, a pixel electrode, a redundant gate pad, and a redundant data pad are formed.02-26-2009
20110143467METHOD FOR FABRICATING INGAAIN LIGHT EMITTING DEVICE ON A COMBINED SUBSTRATE - One embodiment of the present invention provides a method for fabricating an InGaAlN light-emitting semiconductor structure. During the fabrication process, at least one single-crystal sacrificial layer is deposited on the surface of a base substrate to form a combined substrate, wherein the single-crystal sacrificial layer is lattice-matched with InGaAlN, and wherein the single crystal layer forms a sacrificial layer. Next, the InGaAlN light-emitting semiconductor structure is fabricated on the combined substrate. The InGaAlN structure fabricated on the combined substrate is then transferred to a support substrate, thereby facilitating a vertical electrode configuration. Transferring the InGaAlN structure involves etching the single-crystal sacrificial layer with a chemical etchant. Furthermore, the InGaAlN and the base substrate are resistant to the chemical etchant. The base substrate can be reused after the InGaAlN structure is transferred.06-16-2011
20090203160SYSTEM FOR DISPLAYING IMAGES INCLUDING THIN FILM TRANSISTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A system for displaying images. The system comprises a thin film transistor (TFT) device comprising a substrate comprising a driving circuit region and a pixel region. First and second active layers are disposed on the substrate in the driving circuit region and in the pixel region, respectively. The first active layer has a grain size greater than that of the second active layer. Two gate structures are disposed on the first and second active layers, respectively, in which each gate structure comprises a stack of a gate dielectric layer and a gate layer. A reflector is disposed on the substrate under the first active layer and insulated from the first active layer. A method for fabricating a system for displaying images including the TFT device is also disclosed.08-13-2009
20090203158METHOD FOR FABRICATING A PHOTONIC CRYSTAL OR PHOTONIC BANDGAP VERTICAL-CAVITY SURFACE-EMITTING LASER - The invention relates to fabrication of VCSELs. It provides a method for fabricating a VCSEL that contains a micro/nano-structured mode selective lateral layer, where the micro/nano-structured layer is obtained by well controlled local etching. The invention enables control of the micro/nano-structured layer thickness with very high precision. In particular, the invention relates to a method for fabricating a VCSEL with a micro/nano-structured mode selective layer for controlling the VCSELs transverse electromagnetic modes.08-13-2009
20110229994Method of manufacturing organic light emitting display device - A method of manufacturing an organic light emitting display device includes providing a substrate, the substrate including a first electrode on which a first photosensitive layer is formed, a second electrode on which a second photosensitive layer is formed, and an exposed third electrode, coating an organic layer on the substrate, and carrying out an ashing process to remove the organic layer and the second photosensitive layer and to partially remove the first photosensitive layer so as to avoid exposing the upper surface of the first electrode.09-22-2011
20110229995Silicon Nanoparticle White Light Emitting Device - Multiple films of red-green-blue (RGB) luminescent silicon nanoparticles are integrated in a cascade configuration as a top coating in an ultraviolet/blue light emitting diode (LED) to convert it to a white LED. The configuration of RGB luminescent silicon nanoparticle films harnesses the short wavelength portion of the light emitted from the UV/blue LED while transmitting efficiently the longer wavelength portion. The configuration also reduces damaging heat and/or ultraviolet effects to both the device and to humans.09-22-2011
20110229993METHOD OF FABRICATING A LIGHT EMITTING DIODE CHIP HAVING PHOSPHOR COATING LAYER - A method of fabricating light emitting diode chips having a phosphor coating layer comprises providing a substrate having a plurality of light emitting diodes formed thereon; forming a conductive bump on at least one of the plurality of light emitting diodes; forming a phosphor coating layer over the substrate and the light emitting diodes; cutting the phosphor coating layer by a point cutter to remove an upper portion of the phosphor coating layer, so as to reduce a thickness of the phosphor coating layer and expose the conductive bump; and forming a plurality of individual light emitting diode chips having the phosphor coating layer by separating the plurality of light emitting diodes.09-22-2011
20090191653Transflective liquid crystal display device and method of fabricating the same - An array substrate for a transflective liquid crystal display device includes: a substrate; a gate line and a data line on the substrate, the gate line and the data line crossing each other to define a pixel region including a transmissive area and a reflective area surrounding the transmissive area; a thin film transistor having a gate insulating layer, the thin film transistor connected to the gate line and the data line; a first passivation layer on the thin film transistor, the first passivation layer having a drain contact hole exposing a drain electrode of the thin film transistor and a through hole exposing the substrate in the transmissive area; a reflective plate on the first passivation layer; a second passivation layer on the reflective plate; and a pixel electrode on the second passivation layer, the pixel electrode contacting the substrate in the transmissive area through the through hole and contacting the drain electrode through the drain contact hole.07-30-2009
20090203159METHOD OF PRODUCING SEMICONDUCTOR OPTICAL DEVICE - The invention discloses a method of producing on a substrate a semiconductor optical device having a laser diode and an EA optical modulator. An etched side face of a first semiconductor portion is formed. Then, for example, a first optical confinement layer and an active layer both for the EA optical modulator are grown by the metal organic vapor phase epitaxy method. The first optical confinement layer is grown by supplying hydrogen chloride in addition to a material gas. When the first optical confinement layer is grown, the formation of a thick semiconductor layer along the etched side face, which is an abnormally grown semiconductor layer, is decreased. Subsequently, the active layer for the EA optical modulator is grown. This method can suppress the active layer for the EA optical modulator from bending caused by the abnormally grown semiconductor layer.08-13-2009
20090221106Article and method for color and intensity balanced solid state light sources - Subtractive and/or additive techniques can adjust both color and/or intensity in solid wavelength conversion materials.09-03-2009
20090221107Deposition Method and Manufacturing Method of Light-Emitting Device - Part of a material layer is deposited on a deposition target surface of a second substrate by steps of providing a first substrate having a light absorption layer and a material layer in contact with the light absorption layer over one of surfaces; making a surface of the first substrate over which the material layer is formed and a deposition target surface of a second substrate face to each other; depositing part of the material layer on the deposition target surface of the second substrate in such a manner that irradiation with laser light of which repetition rate is greater than or equal to 10 MHz and pulse width is greater than or equal to 100 fs and less than or equal to 10 ns is performed from the other surface side of the first substrate to selectively heat part of the material layer overlapping with the light absorption layer.09-03-2009
20100015739SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING IMPROVED LUMINANCE AND MANUFACTURING METHOD THEREOF - In the semiconductor light emitting device manufacturing method, a surface of a substrate, on which the semiconductor light emitting device is to be manufactured, is etched, thus forming a plurality of deep trenches. Semiconductor films are sequentially grown on the surface of the substrate in which the deep trenches are formed. The deep trenches are formed to have predetermined depth, so that, even if the semiconductor films are grown on the surface of the substrate, voids are formed in regions of the substrate in which the trenches are formed, and the voids are used as reflectors for light generated by the semiconductor light emitting device.01-21-2010
20090253223ORGANIC ELECTROLUMINESCENT ELEMENT MANUFACTURING METHOD - An ink containing an electroluminescent light emitting material is discharged onto a buffer layer. The discharge amount of the ink is larger than a maximum volume where the ink is retained by the surface tension thereof on the top surface of the buffer layer.10-08-2009
20100041171LIGHT-EMITTING DEVICE - To provide a light-emitting device which can emit light with high luminance and high efficiency, and is excellent in durability. The light-emitting device includes an organic compound layer containing a phenanthroline compound represented by the general formula [I] and a carbonate.02-18-2010
20130122619OPTICAL DEVICE WAFER PROCESSING METHOD - An optical device wafer is divided into individual optical devices along streets. A modified layer is formed by applying a laser beam to a sapphire substrate constituting the optical device wafer along the streets from the back side of the sapphire substrate such that the focal point of the laser beam is set inside the sapphire substrate, thereby forming a modified layer inside the sapphire substrate along each street. A reflective film is formed on the back side of the sapphire substrate and the reflective film is cut by applying a laser beam along the streets from the back side of the sapphire substrate. The wafer is divided by applying an external force to the optical device wafer to thereby break the optical device wafer along each street where the modified layer is formed, so that the optical device wafer is divided into the individual optical devices.05-16-2013
20100173434NANOCRYSTAL ELECTROLUMINESCENCE DEVICE AND FABRICATION METHOD THEREOF - A nanocrystal electroluminescence device comprising a polymer hole transport layer, a nanocrystal light-emitting layer and an organic electron transport layer wherein the nanocrystal light-emitting layer is independently and separately formed between the polymer hole transport layer and the organic electron transport layer. According to the nanocrystal electroluminescence device, since the hole transport layer, the nanocrystal light-emitting layer and the electron transport layer are completely separated from one another, the electroluminescence device provides a pure nanocrystal luminescence spectrum having limited luminescence from other organic layers and substantially no influence by operational conditions, such as voltage. Further, a method for fabricating the nanocrystal electroluminescence device.07-08-2010
20100261300METHOD FOR SEPARATING SUBSTRATE FROM SEMICONDUCTOR LAYER - A method for separating an epitaxial substrate from a semiconductor layer initially forms a patterned silicon dioxide layer between a substrate and a semiconductor layer, and then separates the substrate from the patterned silicon dioxide layer using two wet etching processes.10-14-2010
20100216266Pulsed high-voltage silicon quantum dot fluorescent lamp - In a method for making a pulsed high-voltage silicon quantum dot fluorescent lamp, an excitation source is made by providing a first substrate, coating the first substrate with a buffer layer of titanium, coating the buffer layer with a catalytic layer of a material selected from a group consisting of nickel, aluminum and platinum and providing a plurality of nanometer discharging elements one the catalytic layer. An emission source is made by providing a second substrate, coating the second substrate with a transparent electrode film of titanium nitride and coating the transparent electrode film with a silicon quantum dot fluorescent film comprising silicon quantum dots. A pulsed high-voltage source is provided between the excitation source and the emission source to generate a pulsed field-effect electric field to cause the nanometer discharging elements to release electrons and accelerate the electrons to excite the silicon quantum dots to emit pulsed visible light.08-26-2010
20130217161METHOD FOR MANUFACTURING INTEGRAL IMAGING DEVICE - In a method for manufacturing an integral imaging device, a layer of curable adhesive is first applied on a flexible substrate and half cured such that the curable adhesive is solidified but is capable of deforming under external forces. Then the curable adhesive is printed into a lenticular lens having a predetermined shape and size using a roll-to-roll processing device and fully cured such that the curable adhesive is capable of withstanding external forces to hold the predetermined shape and size. Last, a light emitting diode display is applied on the flexible substrate opposite to the lenticular lens such that an image plane of the light emitting diode display coincides with a focal plane of the lenticular lens.08-22-2013
20100136728LIGHT-EMITTING DIODE CHIP WITH HIGH LIGHT EXTRACTION AND METHOD FOR MANUFACTURING THE SAME - This invention provides a light-emitting diode chip with high light extraction, which includes a substrate, an epitaxial-layer structure for generating light by electric-optical effect, a transparent reflective layer sandwiched between the substrate and the epitaxial-layer structure, and a pair of electrodes for providing power supply to the epitaxial-layer structure. A bottom surface and top surface of the epitaxial-layer structure are roughened to have a roughness not less than 100 nm root mean square (rms). The light generated by the epitaxial-layer structure is hence effectively extracted out. A transparent reflective layer not more than 5 μm rms is formed as an interface between the substrate and the epitaxial-layer structure. The light toward the substrate is more effectively reflected upward. The light extraction and brightness are thus enhanced. Methods for manufacturing the light-emitting diode chip of the present invention are also provided.06-03-2010
20100210050METHOD OF MANUFACTURING LIQUID CRYSTAL DISPLAY DEVICE - A method of manufacturing a liquid crystal display device 08-19-2010
20100136727PRODUCTION METHOD FOR NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - The present invention provides a production method for a nitride semiconductor light emitting device, which warps less after removing the substrate, and which can emit light from the side thereof; specifically, the present invention provides a production method for a nitride semiconductor light emitting device comprising: forming stacked layers by stacking at least an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer on a substrate in this order; forming grooves which divide the stacked layers so as to correspond to nitride semiconductor light emitting devices to be produced; filling the grooves with a sacrifice layer; and forming a plate layer on the p-type semiconductor layer and the sacrifice layer by plating.06-03-2010
20100197055SEMICONDUCTOR LIGHT EMITTING DEVICE WITH PROTRUSIONS TO IMPROVE EXTERNAL EFFICIENCY AND CRYSTAL GROWTH - A substrate has at least one recess and/or protrusion formed in and/or on a surface thereof so as to scatter or diffract light generated in an active layer. The recess and/or protrusion is formed in such a shape that can reduce crystalline defects in semiconductor layers.08-05-2010
20100221855Light Emitting Device and Method of Manufacturing the Same - In a top emission structure, there has been a problem in that a wiring, a TFT, or the like is provided in regions other than a light emitting region so that light reflected by the wiring reaches eyes of an observer. The present invention prevents light that is reflected by a wire from reaching eyes of an observer by providing a light-absorbing multilayer film (09-02-2010
20100221856SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PROCESS FOR PRODUCTION THEREOF - One aspect of the present invention provides a semiconductor light-emitting device improved in luminance, and also provides a process for production thereof. The process comprises a procedure of forming a relief structure on the light-extraction surface of the device by use of a self-assembled film. In that procedure, the light-extraction surface is partly covered with a protective film so as to protect an area for an electrode to be formed therein. The electrode is then finally formed there after the procedure. The process thus reduces the area incapable, due to thickness of the electrode, of being provided with the relief structure. Between the electrode and the light-extraction surface, a contact layer is formed so as to establish ohmic contact between them.09-02-2010
20090130787Method for fabricating a plurality of electromagnetic radiation emitting semiconductor chips - Method for fabricating a semiconductor chip which emits electromagnetic radiation, wherein to improve the light yield of semiconductor chips which emit electromagnetic radiation, a textured reflection surface is integrated on the p-side of a semiconductor chip. The semiconductor chip has an epitaxially produced semiconductor layer stack based on GaN, which comprises an n-conducting semiconductor layer, a p-conducting semiconductor layer and an electromagnetic radiation generating region which is arranged between these two semiconductor layers. The surface of the p-conducting semiconductor layer which faces away from the radiation-generating region is provided with three-dimensional pyramid-like structures. A mirror layer is arranged over the whole of this textured surface. A textured reflection surface is formed between the mirror layer and the p-conducting semiconductor layer.05-21-2009
20110237008OPTOELECTRONIC SUBSTRATE AND METHODS OF MAKING SAME - A method of fabricating a device by providing an auxiliary substrate having a metal nitride layer disposed thereon where the nitride layer has a nitrogen face and an opposite face and a dislocation density that is less than about 1009-29-2011
20130143340METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making light emitting diode includes following steps. A substrate is provided. A first semiconductor layer is grown on a surface of the substrate. A patterned mask layer is located on a surface of the first semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures, a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed first semiconductor layer is etched to form a protruding pair. A number of three-dimensional nano-structures are formed by removing the patterned mask layer. An active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. A first electrode is electrically connected with the first semiconductor layer. A second electrode is located to cover the entire surface of the second semiconductor layer which is away from the active layer.06-06-2013
20130143341METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making light emitting diode includes the following steps. A substrate is provided. A first semiconductor layer is grown on a surface of the substrate. A patterned mask layer is located on a surface of the first semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures, a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed first semiconductor layer is etched to form a protruding pair. A number of three-dimensional nano-structures are formed. An active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. The substrate is removed and a surface of the first semiconductor layer is exposed. A first electrode is applied to cover the exposed surface. A second electrode is electrically connected with the second semiconductor layer.06-06-2013
20090068775Method for Fabricating Micro-Lens and Micro-Lens Integrated Optoelectronic Devices Using Selective Etch of Compound Semiconductor - Provided are a method of fabricating a microlens using selective etching of a compound semi-conductor and a method of fabricating a photoelectric device having the microlens. The formation of the microlens includes patterning a compound semiconductor layer and removing a lateral surface of the compound semiconductor layer to form a roughly hemispheric lens. The lateral surface of the compound semiconductor layer is removed by a digital alloy method. In particular, the lateral surface of the compound semiconductor layer is removed by a wet etching process.03-12-2009
20090068776Method for fabricating semiconductor substrate for optoelectronic components - Presented is a method for fabricating a semiconductor substrate. The method includes implanting impurity material into the semiconductor substrate, and forming a reflective layer-like zone in the semiconductor substrate that includes the impurity material.03-12-2009
20090035884METHOD FOR MANUFACTURING SURFACE-EMITTING LASER - Provided is a method for manufacturing a surface-emitting laser capable of forming a photonic crystal structure inside a semiconductor highly accurately and easily without direct bonding. It is a method by laminating on a substrate a plurality of semiconductor layers including an active layer and a semiconductor layer having a photonic crystal structure formed therein, the method including the steps of forming a second semiconductor layer on a first semiconductor layer to form the photonic crystal structure, forming a plurality of microholes in the second semiconductor layer, forming a low refractive index portion in a part of the first semiconductor layer via the plurality of microholes thereby to provide the first semiconductor layer with the photonic crystal structure having a one-dimensional or two-dimensional refractive index distribution in a direction parallel to the substrate, and forming a third semiconductor layer by crystal regrowth from a surface of the second semiconductor layer.02-05-2009
20110008920Microlens, an image sensor including a microlens, method of forming a microlens and method for manufacturing an image sensor - A microlens, an image sensor including the microlens, a method of forming the microlens and a method of manufacturing the image sensor are provided. The microlens includes a polysilicon pattern, having a cylindrical shape, formed on a substrate, and a round-type shell portion enclosing the polysilicon pattern. The microlens may further include a filler material filling an interior of the shell portion, or a second shell portion covering the first shell portion. The method of forming a microlens includes forming a silicon pattern on a semiconductor substrate having a lower structure, forming a capping film on the semiconductor substrate over the silicon pattern, annealing the silicon pattern and the capping film altering the silicon pattern to a polysilicon pattern having a cylindrical shape and the capping film to a shell portion for a round-type microlens, and filling an interior of the shell portion with a lens material through an opening between the semiconductor substrate and an edge of the shell portion. The image sensor includes a microlens formed by a similar method and a photodiode having a cylindrical shape.01-13-2011
20100178720Method of manufacturing semiconductor light emitting device - A method of manufacturing a semiconductor light emitting device may include forming an insulating layer on a substrate, forming a plurality of first holes in the insulating layer, forming a plurality of GaN rods in the plurality of first holes, and laterally growing an n-GaN layer on the plurality of GaN rods.07-15-2010
20110033962HIGH EFFICIENCY LED WITH MULTI-LAYER REFLECTOR STRUCTURE AND METHOD FOR FABRICATING THE SAME - Provided are a high efficiency light emitting diode and a method for fabricating the same, in which a multi-layer reflector is laminated to a surface emission type light emitting diode to improve the efficiency of a light emitting diode. A high efficiency reflector is integrated on the light emitting diode using a dry etching process and a wet etching process. Although light produced from an active layer when applying a current thereto is emitted in several directions, the reflectors formed both sides of the active layer reflect the emitted light toward a surface of a semiconductor substrate, thus improving the light efficiency. Compared with the existing light emitting diode, the structure of the proposed light emitting diode is more efficient and therefore it can be used as a light source having low power consumption and high brightness. Also, the light emitting diode can be fabricated using the existing semiconductor process, thus reducing the complexity of the fabricating process.02-10-2011
20090142863ORGANIC EL DISPLAY PANEL FOR REDUCING RESISTANCE OF ELECTRODE LINES - Method for fabricating an organic EL display panel having an EL region at every cross of first and second electrodes, including the steps of forming a plurality of first electrodes at regular intervals on a transparent substrate, forming an insulating layer in regions other than the EL regions, forming second supplementary electrodes on the insulating layer, forming an electric insulating barrier between adjacent EL regions perpendicular to the first electrodes, forming an organic EL layer in each of the EL regions with a shadow mask, depositing an electrode material on an entire surface inclusive of the organic EL layer, to form a plurality of second electrodes electrically connected to the second supplementary electrodes, and forming a protection film on an entire surface inclusive of the second electrodes.06-04-2009
20100151604LIGHT EMITTING DIODE HAVING PLURALITY OF LIGHT EMITTING CELLS AND METHOD OF FABRICATING THE SAME - The present invention discloses a light emitting diode. The light emitting diode includes a plurality of light emitting cells arranged on a substrate, each light emitting cell including a first semiconductor layer and a second semiconductor layer arranged on the first semiconductor layer; a first dielectric layer arranged on each light emitting cell and including a first opening to expose the first semiconductor layer and a second opening to expose the second semiconductor layer; a wire arranged on the first dielectric layer to couple two of the light emitting cells; and a second dielectric layer arranged on the first dielectric layer and the wire. The first dielectric layer and the second dielectric layer comprise the same material and the first dielectric layer is thicker than the second dielectric layer.06-17-2010
20110086449Method for fabricating oxide-confined vertical-cavity surface-emitting laser - The present invention discloses a method for fabricating a heat-resistant, humidity-resistant oxide-confined vertical-cavity surface-emitting laser (VCSEL) by slowing down the oxidizing rate during a VCSEL oxidation process to thereby reduce stress concentration of an oxidation layer and by preventing moisture invasion using a passivation layer disposed on a laser window. The VCSEL device thus fabricated is heat-resistant, humidity-resistant, and highly reliable. In a preferred embodiment, the oxidation process takes place at an oxidizing rate of less than 0.4 μm/min, and the passivation layer is a SiON passivation layer.04-14-2011
20110244611LIGHT EMITTING DEVICE, LIGHT EMITTING SYSTEM HAVING THE SAME, AND FABRICATING METHOD OF THE LIGHT EMITTING DEVICE AND THE LIGHT EMITTING SYSTEM - A semiconductor device includes a first light emitting chip, the first light emitting chip having a first semiconductor layer, a second semiconductor layer, and a first active layer disposed therebetween, a second light emitting chip disposed on the first light emitting chip, the second light emitting chip having a third semiconductor layer, a fourth semiconductor layer, and a second active layer disposed therebetween, and a conductive layer disposed between the first semiconductor layer and the fourth semiconductor layer, the first semiconductor layer and the fourth semiconductor layer having different conductivity types.10-06-2011
20110244610METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - The present invention provides a method for producing a Group III nitride semiconductor light-emitting device whose main surface is a plane that provides an internal electric field of zero, and which exhibits improved light extraction performance. In the production method, one surface of an a-plane sapphire substrate is subjected to dry etching, to thereby form an embossment pattern having a plurality of mesas which are arranged in a honeycomb-dot pattern as viewed from above; and an n-type layer, a light-emitting layer, and a p-type layer, each of which is formed of a Group III nitride semiconductor layer having an m-plane main surface, are sequentially stacked on the surface of the sapphire substrate on which the mesas are formed. Subsequently, a p-electrode is formed on the p-type layer, and the p-electrode is bonded to a support substrate via a metal layer. Next, the sapphire substrate is removed through the laser lift-off process. On the thus-exposed surface of the n-type layer is formed an embossment pattern having dents provided through transfer of the mesas of the embossment pattern of the sapphire substrate. Then, the emboss-patterned surface of the n-type layer is subjected to wet etching, to thereby form numerous etched pits.10-06-2011
20110244609METHOD OF FORMING CURRENT-INJECTING/TUNNELING LIGHT-EMITTING DEVICE - An apparatus and method for making same. Some embodiments include a light-emitting device having a light-emitting active region; a tunneling-barrier (TB) structure facing adjacent the active region; a TB grown-epitaxial-metal-mirror (TB-GEMM) structure facing adjacent the TB structure, wherein the TB-GEMM structure includes at least one metal is substantially lattice matched to the active region; and a conductivity-type III-nitride crystal structure adjacent facing the active region opposite the TB structure. In some embodiments, the active region includes an MQW structure. In some embodiments, the TB-GEMM includes an alloy composition such that metal current injectors have a Fermi energy potential substantially equal to the sub-band minimum energy potential of the MQW. Some embodiments further include a second mirror (optionally a GEMM) to form an optical cavity between the second mirror and the TB-GEMM structure. In some embodiments, at least one of the GEMM is deposited on, and lattice matched to, a substrate.10-06-2011
20090311814THIN FILM TRANSISTOR ARRAY PANEL FOR A DISPLAY DEVICE AND A METHOD OF MANUFACTURING THE SAME - A method of manufacturing a thin film transistor array panel includes forming gate lines including gate electrodes on an insulation substrate; forming a gate insulating layer, semiconductor layer, and etch stop layer on the gate lines; etching and patterning the etch stop and semiconductor layers at the same time using photolithography; ashing and partially removing a photoresist film pattern used in the patterning of the etch stop and semiconductor layers; etching the etch stop layer exposed by removed portions of the photoresist film pattern to form etch stop members; depositing ohmic contact and data metal layers onto the etch stop members, etching the ohmic contact and data metal layers at the same time using photolithography to form data lines having source and drain electrodes, and ohmic contact members below the source and drain electrodes; forming a passivation layer on the data lines and drain electrodes; and forming pixel electrodes on the passivation layer.12-17-2009
20110086452SEMICONDUCTOR HAVING ENHANCED CARBON DOPING - Methods for fabricating semiconductors with enhanced strain. One embodiment includes fabrication of a semiconductor device with an epitaxial structure. The epitaxial structure is formed with one or more semiconductor layers. One or more of the layers includes a dopant including small quantities of Al and repeated delta doping during expitaxial growth to form periods where surfaces are group III rich.04-14-2011
20090098673THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME - A TFT array panel-including a substrate, a gate line having a gate electrode, a gate insulating layer formed on the gate line, a data line having a source electrode and a drain electrode spaced apart from the source electrode, a passivation layer formed on the data line and the drain electrode, and a pixel electrode connected to the drain electrode is provided. The TFT array panel further includes a protection layer including Si under at least one of the gate insulating layer and the passivation layer to enhance reliability.04-16-2009
20110086450METHOD OF MANUFACTURING THIN FILM TRANSISTOR ARRAY SUBSTRATE - Disclosed is a method of manufacturing a TFT array substrate having a reduced number of mask processes. The method includes sequentially depositing a first conductive material, a gate insulating layer, a semiconductor layer, and a second conductive material on a substrate, and forming a first resist pattern having three height levels on the second conductive material. The method further includes forming a gate line, a data line that crosses the gate line and has first and second slit units, a source electrode connected to the data line and having a third slit unit, and a drain electrode positioned opposite the source electrode with a channel interposed between the source electrode and the drain electrode and having a fourth slit unit, through a plurality of etching processes using the first resist pattern.04-14-2011
20090311812SURFACE EMITTING LASER AND MANUFACTURING METHOD THEREOF - A surface emitting laser includes a lower Bragg reflector, a resonator and an upper Bragg reflector. The resonator is provided on top of the lower Bragg reflector and includes an active layer, a lower semiconductor layer and an upper semiconductor layer. The upper Bragg reflector is provided on top of the resonator, and includes a plurality of semiconductor layers. In this surface emitting laser, the uppermost layer among the plurality of semiconductor layers in the lower Bragg reflector forms an air gap, which is larger than the aperture of the first insulating layer, while the lowermost layer among the plurality of semiconductor layers in the upper Bragg reflector forms an air gap, which is larger than the aperture of the second insulating layer.12-17-2009
20090311813METHOD OF FABRICATING PLANAR LIGHT SOURCE - In a method of fabricating a planar light source, a first substrate is formed at first. First electrodes approximately parallel to each other are formed on the first substrate. Sets of first dielectric patterns are formed on the first substrate. Each set of the first dielectric patterns includes at least two first striped dielectric patterns, and each of the first striped dielectric patterns covers one of the first electrodes correspondingly. The edges of the top of each first striped dielectric pattern are raised in a peak shape. A phosphor layer is formed between the first striped dielectric patterns of each set of the first dielectric patterns. A second substrate is formed. The first and second substrates are bound; meanwhile, a discharge gas is injected into the discharge space.12-17-2009
20120244653METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT - A reflective film including Ag of an Ag alloy is patterned in a uniform thickness without decreasing reflectivity. The reflective film is formed on the entire surface of a first insulating film by sputtering, vacuum deposition or the like, and a barrier metal film having a given pattern is formed on the reflective film by a lift-off method. The reflective film is wet etched using a silver etching liquid. The barrier metal film is not wet etched by the silver etching liquid, and therefore functions as a mask, and the reflective film in a region on which the barrier metal film has been formed remains not etched. As a result, the reflective film having a desired patter can uniformly be formed on the first insulating film.09-27-2012
20100062554Light-emitting device, light-emitting element and method of manufacturing same - Provided are a light-emitting element and a light-emitting device, and methods of fabricating the same. The method of fabricating a light-emitting element includes forming a buffer layer on a substrate and forming photonic crystal patterns and a pad pattern on the buffer layer. Each of the pad pattern and the photonic crystal patterns are made of a metal material, and the pad pattern is physically connected to the photonic crystal patterns. Forming a light-emitting structure includes sequentially stacking a first conductive pattern of a first conductivity type, a light-emitting pattern, and a second conductive pattern of a second conductivity type on the buffer layer. And the method also includes forming a first electrode that is electrically connected to the first conductive pattern and forming a second electrode that is electrically connected to the second conductive pattern.03-11-2010
20100068838Method of Manufacturing a Light Emitting, Photovoltaic or Other Electronic Apparatus and System - The present invention provides a method of manufacturing an electronic apparatus, such as a lighting device having light emitting diodes (LEDs) or a power generating device having photovoltaic diodes. The exemplary method includes forming at least one first conductor coupled to a base; coupling a plurality of substantially spherical substrate particles to the at least one first conductor; converting the substrate particles into a plurality of substantially spherical diodes; forming at least one second conductor coupled to the substantially spherical diodes; and depositing or attaching a plurality of substantially spherical lenses suspended in a first polymer. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes have a ratio of mean diameters or lengths between about 10:1 and 2:1. In various embodiments, the forming, coupling and converting steps are performed by or through a printing process.03-18-2010
20100068839Method of Manufacturing a Light Emitting, Photovoltaic or Other Electronic Apparatus and System - The present invention provides a method of manufacturing an electronic apparatus, such as a lighting device having light emitting diodes (LEDs) or a power generating device having photovoltaic diodes. The exemplary method includes forming at least one first conductor coupled to a base; coupling a plurality of substrate particles to the at least one first conductor; converting the plurality of substrate particles into a plurality of diodes; forming at least one second conductor coupled to the plurality of spherical diodes; and depositing or attaching a plurality of substantially spherical lenses suspended in a first polymer, with the lenses and the suspending polymer having different indices of refraction. In some embodiments, the lenses and diodes have a ratio of mean diameters or lengths between about 10:1 and 2:1. In various embodiments, the forming, coupling and converting steps are performed by or through a printing process.03-18-2010
20100055816Light Emitting Device Manufacturing Apparatus and Method - A disclosed light-emitting-device manufacturing apparatus for manufacturing a light emitting device by forming, on an in-process substrate, an organic layer including an emitting layer includes multiple processing chambers to which the in-process substrate is sequentially transferred to be subjected to multiple substrate processing steps; and multiple substrate transfer chambers, each of which is connected to a different one of the processing chambers. A substrate holding container configured to contain the in-process substrate is sequentially connected to the substrate transfer chambers in order so that the in-process substrate is sequentially transferred to the processing chambers to be subjected to the substrate processing steps.03-04-2010
20100055815METHOD OF MANFUACTURING LENS FOR LIGHT EMITTING DIODE PACKAGE - The present invention relates to a method of manufacturing a lens for a light emitting diode package and can reduce a manufacture cost through reduction of material loss and improve productivity through a simple process without an additional device by freely implementing a final lens shape by curing liquid resin in multi-steps.03-04-2010
20110097833LIGHT SOURCE INCLUDING A WAVELENGHT-CONVERETED SEMICONDUCTOR LIGHT EMITTING DEVICE AND A FILTER - A semiconductor light emitting device comprises a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer is adapted to emit first light having a first peak wavelength. A first wavelength converting material is adapted to absorb the first light and emit second light having a second peak wavelength. A second wavelength converting material is adapted to absorb either the first light or the second light and emit third light having a third peak wavelength. A filter is adapted to reflect fourth light having a fourth peak wavelength. The fourth light is either a portion of the second light or a portion of the third light. The filter is configured to transmit light having a peak wavelength longer or shorter than the fourth peak wavelength. The filter is disposed over the light emitting device in the path of at least a portion of the first, second, and third light.04-28-2011
20100068840ORGANIC LIGHT EMITTING APPARATUS AND METHOD OF PRODUCING THE SAME - Provided are an organic light emitting apparatus for use in, for example, a flat device display, and a method of producing the apparatus. The organic light emitting apparatus has sides formed by division at ends of its substrate. Three-dimensional portions are formed on the surface of the substrate along the sides. An inorganic sealing layer is formed to extend toward the three-dimensional portions.03-18-2010
20110097831Method of Manufacturing a Vertical Type Light-Emitting Diode - In a method of manufacturing a vertical type light-emitting diode, a multilayered structure of group III nitride semiconductor compounds is epitaxy deposited on an irregular surface of a substrate. The substrate is then removed to expose an irregular surface of the multilayered structure corresponding to the irregular surface of the substrate. A portion of the exposed irregular surface of the multilayered structure is then etched for forming an electrode contact surface on which an electrode layer is subsequently formed. With this method, no specific planarized region is required on the irregular surface of the substrate. As a result, planarization treatment of the substrate is not necessary. The same substrate with the irregular surface can be reused for fabricating vertical and horizontal light-emitting diodes.04-28-2011
20110081737METHOD FOR MANUFACTURING LIGHT EMITTING DIODE ASSEMBLY - A method for manufacturing a light emitting diode (LED) assembly comprises the steps of: covering a light-reflection layer onto a substrate layer, covering a light-emitting layer onto the light-reflection layer, and forming a P type electrode and an N type electrode extended from the light-emitting layer, perforating through the light-reflection layer, and exposed from the substrate layer to form an LED chip structure; packaging the LED chip structure with a light-transmissible packaging material and keeping the P type electrode and the N type electrode exposed from the light-transmissible packaging material to form a molded LED chip cell; and electrically connecting the P type electrode and the N type electrode of the molded LED chip cell to a circuit board, so as to manufacture the LED assembly.04-07-2011
20110151605METHOD FOR FABRICATING COLOR FILTER USING SURFACE PLASMON AND METHOD FOR FABRICATING LIQUID CRYSTAL DISPLAY DEVICE - Discussed are methods for fabricating a color filter using a surface plasmon and a liquid crystal display (LCD) device capable of enhancing a transmittance ratio of an LC panel and simplifying entire processes, by forming a transmissive pattern consisting of a plurality of sub-wavelength holes having a period on a metal layer, and by implementing colors by selectively transmitting light of specific wavelengths with using a surface plasmon phenomenon.06-23-2011
20110151606LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURE - A method of making a light emitting device includes forming an active layer between first and semiconductor layers of different conductivity types, and forming a transparent conductive layer adjacent the second semiconductor layer. The transparent conductive layer includes a first transparent conductive region contacting a first region of the second semiconductor layer and a second transparent conductive region contacting a second region of the second semiconductor layer. An electrode is formed adjacent the first semiconductor layer in vertical alignment with the second region.06-23-2011
20110250712COLOR ELECTROPHORETIC DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to an embodiment of the present invention, a method for manuafacturing a color electrophoretic display device includes forming a thin film transistor (TFT) array substrate including a display region, wherein a plurality of pixel regions is defined in a matrix, and alignment keys are provided at the outside of the display region, forming an electrophoretic layer including a micro capsule layer formed so as to correspond to the display region of the TFT array substrate, and forming a color filter layer on an outer surface of the electrophoretic layer using the alignment keys so as to correspond to the respective pixel regions of the display region.10-13-2011
20100311194Method For Manufacturing Surface-Emitting Laser Device, Optical Scanner, Image Forming Apparatus, And Oxidation Apparatus - Disclosed is a method for manufacturing a surface-emitting laser device that emits laser light in a direction perpendicular to a substrate. The method includes manufacturing a laminated body in which a lower reflecting mirror, a resonator structure including an active layer, and an upper reflecting mirror including a selectively oxidized layer are laminated on the substrate; etching the laminated body from an upper surface to form a mesa structure having at least the selectively oxidized layer exposed at a side surface; and mounting the laminated body on a tray having a front surface shaped to follow a warpage of the laminated body at an oxidation temperature and selectively oxidizing the selectively oxidized layer from the side surface of the mesa structure, thereby generating a confinement structure in which a current passing region is surrounded by an oxide.12-09-2010
20120034719METHOD OF FABRICATING A PIXEL ARRAY SUBSTRATE - A method of fabricating a pixel array substrate is disclosed. The reflective pixel array substrate can be made by utilizing five photo masks only. The reflective pixel array substrate includes a substrate, a thin film transistor, a reflective electrode, an insulating layer and numerous protruding bumps. The step between the protrusion bump and the substrate cause the reflective electrode thereon to have a corrugated structure. The gate electrode of the thin film transistor and the protruding bumps are made of a same conductive layer. The drain electrode connects the reflective electrode, and the drain electrode and the reflective electrode are made of a same conductive layer.02-09-2012
20090023235Method and Apparatus for Improved Printed Cathodes for Light-Emitting Devices - Rapid thermal processing of printed cathodes for light-emitting polymer devices (LEPDs) to prevent detrimental cathode ink/LEP layer interactions is described herein. The ink layer printed cathode can be thinned curing fabrication using high mesh count screens, calendered mesh screens, high squeegee pressures, high hardness squeegees, high squeegee angles and combinations thereof. Alone, or in combination with, a thinned ink layer, the printed cathode can be cured using reduced time hot plate processing, infrared processing, heated gas flow processing, or combinations thereof.01-22-2009
20100105157PROCESS OF MICRO-DISPLAY - A process of a micro-display is provided. First, a substrate having a pixel region and a periphery circuit region is provided, in which a metal reflection layer is formed in the pixel region, and a periphery circuit is formed in the periphery circuit region. Next, a dielectric layer is formed on the substrate to cover the pixel region and the periphery circuit region. Then, a patterned mask layer exposing the dielectric layer on the metal reflection layer is formed on the dielectric layer. Thereafter, a portion of the exposed dielectric layer is removed by using the patterned mask layer as a mask. Next, the patterned mask layer is removed. And then, a portion of the dielectric layer is removed to expose the metal reflection layer.04-29-2010
20100003774METHOD FOR FABRICATING PIXEL STRUCTURE - A pixel structure fabricating method is provided. A gate is formed on a substrate. A gate insulation layer covering the gate is formed on the substrate. A channel layer, a source, and a drain are simultaneously formed on the gate insulation layer above the gate. The gate, channel layer, source, and drain form a thin film transistor (TFT). A passivation layer is formed on the TFT and the gate insulation layer. A black matrix is formed on the passivation layer. The black matrix has a contact opening above the drain and a color filter containing opening. A color filer layer is formed within the color filter containing opening through inkjet printing. A dielectric layer is formed on the black matrix and the color filter layer. The dielectric layer and the passivation layer are patterned to expose the drain. A pixel electrode electrically connected to the drain is formed.01-07-2010
20090317927METHOD OF CLEANING A PATTERNING DEVICE, METHOD OF DEPOSITING A LAYER SYSTEM ON A SUBSTRATE, SYSTEM FOR CLEANING A PATTERNING DEVICE, AND COATING SYSTEM FOR DEPOSITING A LAYER SYSTEM ON A SUBSTRATE - A method of cleaning a patterning device, the patterning device having at least organic coating material (OLED material) deposited thereon, comprises the step of providing a cleaning plasma for removing the coating material from the patterning device by means of a plasma etching process. During the step of removing the coating material from the patterning device, the temperature of the patterning device does not exceed a critical temperature causing damage to the patterning device, while maintaining a plasma etching rate of at least 0.2 μm/min. In order to generate a pulsed cleaning plasma, pulsed energy is provided. The method can be carried out in a direct plasma etching process or in a remote plasma etching process. Different etching processes may be combined or carried out subsequently.12-24-2009
20090246902THIOPHENE DERIVATIVE AND ORGANIC ELECTROLUMINESCENT ELEMENT - The present invention provides a thiophene derivative useful for a material for forming an organic positive hole transport layer of an organic EL element excellent in light emitting efficiency, water resistance or the like, a polymer having the thiophene derivative as a monomer unit, and an organic EL element. The object can be solved by a thiophene derivative represented by the following formula (1), a polymer comprising the thiophene derivative, and an organic EL element, an organic positive hole transporting layer of which comprises the polymer:10-01-2009
20090246901PROCESS OF MAKING A MICROELECTRONIC LIGHT-EMITTING DEVICE ON SEMI-CONDUCTING NANOWIRE FORMED ON A METALLIC SUBSTRATE - A process of making a microelectronic light-emitting device, including: a) growth on a metallic support of multiple wires based on one or more semi-conducting materials designed to emit radiant light, and b) formation of at least one electrical conducting zone of contact on at least one of the wires.10-01-2009
20090162958ARRAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME AND LIQUID CRYSTAL DISPLAY APPARATUS HAVING THE SAME - An array substrate includes a transparent substrate, an organic insulation layer, a pixel electrode, a reflective layer, a light blocking pattern and a switching part. The transparent substrate includes a reflective window that reflects an ambient light and a transmissive window that transmits an artificial light. The organic insulation layer disposed over the transparent substrate becomes thinner gradually at a boundary between the transmissive window and the reflective window. The pixel electrode is formed in the transmissive region. The reflective layer is disposed over the organic insulation layer of the reflective window. The light blocking pattern is disposed at the boundary between the transmissive and reflective windows to prevent a light leakage. The switching part is electrically connected to the pixel electrode to apply an image signal to the pixel electrode. Therefore, a light leakage occurring at boundary is prevented by the light blocking pattern.06-25-2009
20110177638SEMICONDUCTOR LIGHT EMITTING DEVICE WITH CURVATURE CONTROL LAYER - A semiconductor structure is grown on a top surface of a growth substrate. The semiconductor structure comprises a III-nitride light emitting layer disposed between an n-type region and a p-type region. A curvature control layer is disposed in direct contact with the growth substrate. The growth substrate has a thermal expansion coefficient less than a thermal expansion coefficient of GaN and the curvature control layer has a thermal expansion coefficient greater than the thermal expansion coefficient of GaN.07-21-2011
20120276669METHOD FOR MAKING LIGHT EMITTING DIODE - A method of making a LED includes following steps. A substrate is provided, and the substrate includes an epitaxial growth surface. A carbon nanotube layer is placed on the epitaxial growth surface. A first semiconductor layer, an active layer, and a second semiconductor layer are grown in that order on the substrate. A reflector and a first electrode are deposited on the second semiconductor layer in that order. The substrate is removed. A second electrode is deposited on the first semiconductor layer.11-01-2012
20080305566Silicon Nanocrystal Embedded Silicon Oxide Electroluminescence Device with a Mid-Bandgap Transition Layer - A method is provided for forming a silicon (Si) nanocrystal embedded Si oxide electroluminescence (EL) device with a mid-bandgap transition layer. The method provides a highly doped Si bottom electrode, and forms a mid-bandgap electrically insulating dielectric film overlying the electrode. A Si nanocrystal embedded SiOx film layer is formed overlying the mid-bandgap electrically insulating dielectric film, where X is less than 2, and a transparent top electrode overlies the Si nanocrystal embedded SiOx film layer. The bandgap of the mid-bandgap dielectric film is about half that of the bandgap of the Si nanocrystal embedded SiOx film. In one aspect, the Si nanocrystal embedded SiOx film has a bandgap (Eg) of about 10 electronvolts (eV) and mid-bandgap electrically insulating dielectric film has a bandgap of about 5 eV. By dividing the high-energy tunneling processes into two lower energy tunneling steps, potential damage due to high power hot electrons is reduced.12-11-2008
20080268560Method for Producing a Thin-Film Semiconductor Chip - Manufacturing methods for a thin-film semiconductor chip based on a III/V-III/V semiconductor compound material and capable of generating electromagnetic radiation. In one method, a succession of active layers is applied to a growth substrate. Applied to the reverse side of the active layers is a dielectric layer. Laser energy is introduced into a defined volumetric section of the dielectric layer to form an opening. Subsequently, a metallic layer is applied to form a succession of reflective layers, to fill the opening with metallic material and to create a reverse-side electrically conductive contact point to the reverse side of the succession of active layers. Pursuant to another method, a succession of reflective layers is applied to the active layers and laser energy is applied to a volumetric section of the reflective layers, to create a reverse-side electrically conductive contact point.10-30-2008
20080213931LIGHT EMITTING DEVICE - A light emitting device includes a laminate of a lower electrode layer, an organic light-emitting layer, and an upper transparent electrode layer. In the light emitting device, an auxiliary electrode layer is formed of colloidal nano-sized particles of a conductive metal between the lower electrode layer and the organic light-emitting layer. The auxiliary electrode layer causes the lower electrode layer to be flat and the light emitting efficient to be improved. A light emitting device having a structure in which a transparent electrode layer is formed as the lower electrode layer, and an organic light-emitting layer, an auxiliary electrode layer, and an upper electrode layer are sequentially formed thereon has the same effects. When glass is produced by a sol-gel method using metal alkoxide and the light emitting device is sealed by the glass, it is possible to extend the light emitting period.09-04-2008
20080213930Dual panel-type organic electroluminescent display device and method of fabricating the same - A dual panel-type organic electroluminescent display device includes first and second substrates facing and spaced apart from each other, an array element layer disposed along an inner surface of the first substrate, the array element including a thin film transistor, a connection pattern disposed on the array element layer and electrically connected to the thin film transistor, a color filter layer disposed along an inner surface of the second substrate, the color filter layer including red, green, and blue color filters, an overcoat layer disposed on the color filter layer, the overcoat layer including a hygroscopic material, an organic electroluminescent diode disposed on the overcoat layer and connected to the connection pattern, the organic electroluminescent diode including a first electrode, an organic light-emitting layer, and a second electrode sequentially formed on the overcoat layer, and the organic light-emitting layer emits substantially monochromatic light, and a seal pattern along peripheral portions between the first and second substrates. 09-04-2008
20110263056Method of manufacturing a laser diode with improved light-emitting characteristics - The method of the invention is intended for manufacturing a laser diode with improved light-emitting characteristics. The method consists of providing certain components of a laser diode such as a wide-aperture lasing medium that has an active emitting layer with a first end and a second end, a DPH-mode reorganizer that contains a core and a plurality of nanogrooves made in the core and arranged in a pattern that accomplishes a given function and locally changes the refractive index of the core. The method further includes the steps of forming a semitransparent mirror on the second end of the active lasing medium and aligning the first end of the active emitting layer with the core of the DPH-mode reorganizer, thus forming a resonator of the laser diode. In the resonator, the light applied from the laser-active medium bounces back and forth between the DPH-mode reorganizer and the partially reflecting mirror, thereby enhancing stimulated emission.10-27-2011
20100285622LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-type compound semiconductor layer, and a p-type electrode sequentially formed on a first region of the n-type compound semiconductor layer, and an n-type electrode formed on a second region separated from the first region of the n-type compound semiconductor layer, wherein the p-type electrode comprises first and second electrodes, each electrode having different resistance and reflectance.11-11-2010
20100285621METHOD OF MAKING DIODE HAVING REFLECTIVE LAYER - A method of forming a light emitting diode includes forming a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN layer. A p-GaN layer is formed on the active layer. A p-electrode is formed on the p-GaN layer and an n-electrode is formed on the n-GaN layer. A reflective layer is formed on a second side of the transparent substrate. A scribe line is formed on the substrate for separating the diodes on the substrate. Also, a cladding layer of AlGaN is between the p-GaN layer and the active layer.11-11-2010
20100330717SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - A high-efficiency semiconductor light emitting diode and a method for manufacturing the same are provided. The semiconductor LED has high internal quantum efficiency and can reduce the bad effect caused by the crystal defect. In the semiconductor light emitting diode, a conductive substrate has a three-dimensional top surface, and a light-emitting stack structure has a three-dimensional structure and includes an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer, which are sequentially formed on the conductive substrate. A p-electrode is formed on the p-type nitride semiconductor layer, and an n-electrode is formed on a bottom surface of the conductive substrate.12-30-2010
20100330715Uniform Transfer of Luminescent Quantum Dots onto a Substrate - A method of uniformly transferring luminescent quantum dots onto a substrate, comprising: a) preparing a colloidal suspension of luminescent quantum dots in a hydrophobic solvent, wherein the density of the hydrophobic solvent is from 0.67 g/cm12-30-2010
20110256648Method of Making Double-sided Wavelength Converter and Light Generating Device Using Same - A method of forming a light conversion element includes providing a semiconductor construction having a first photoluminescent element epitaxially grown together with a second photoluminescent element. A first region is etched in the first photoluminescent element from a first side of the semiconductor construction and a second region is etched in the second photoluminescent element from a second side of the semiconductor construction. In some embodiments the wavelength converter is attached to an electroluminescent element, such as a light emitting diode (LED).10-20-2011
20110097832METHOD FOR FABRICATING LED DEVICE - An LED device has a substrate, an N-type semiconductor layer formed on the substrate, a light-emitting layer on the N-type semiconductor layer, a P-type semiconductor layer on the light-emitting layer and a transparent electrode layer formed on the P-type semiconductor layer. A top surface of the transparent electrode layer is formed to have multiple micro concave-convex structures to mitigate the light-emitting loss resulted from total reflection, and increase the light-emitting efficiency of the LED device.04-28-2011
20120309120METHOD FOR MANUFACTURING A COLOR FILTER SUBSTRATE - A light shield member in a LCD unit includes a first shield section that includes a pile of two color filter patterns and separates each effective opening of pixel from an effective opening of the adjacent pixel, and a second shield section that includes a pile of three color filter patterns and shields a TFT area including a TFT and the vicinity thereof.12-06-2012
20100190281ORGANIC ELECTROLUMINESCENT DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - An organic electroluminescent device including an organic thin-film transistor element having at least an active layer made of an organic material; and an organic electroluminescent element driven by the organic thin-film transistor element.07-29-2010
20110189803LED CHIP PACKAGE STRUCTURE IN ORDER TO PREVENT THE LIGHT-EMITTING EFFICIENCY OF FLUORESCENT POWDER FROM DECREASING DUE TO HIGH TEMPERATURE AND METHOD FOR MAKING THE SAME - An LED chip package structure in order to prevent the light-emitting efficiency of fluorescent powder from decreasing due to high temperature includes a substrate unit, a light-emitting unit, a transparent colloid body unit, a fluorescent colloid body unit and a frame unit. The light-emitting unit has a plurality of LED chips electrically arranged on the substrate unit. The transparent colloid body unit has a plurality of transparent colloid bodies respectively covering the LED chips. The fluorescent colloid body unit has a plurality of fluorescent colloid bodies respectively covering the transparent colloid bodies. The frame unit is covering the peripheries of each transparent colloid body and each fluorescent colloid body in order to expose the top surfaces of the fluorescent colloid body.08-04-2011
20110189802METHOD FOR ENHANCING LIGHT EXTRACTION EFFICIENCY OF LIGHT EMITTING DIODES - A method for enhancing light extraction efficiency of a light emitting diode is disclosed. The method includes the steps of providing a light emitting diode including in sequence a substrate, a first layer of a first conduction type, an active layer, and a second layer of a second conduction type opposite to the first conduction type; growing a number of protrusions on at least one layer selected from the first layer, the active layer, and the second layer of the light emitting diode to form a patterned oxide layer for protecting the light emitting diode from etch; controlling height of the protrusions to achieve a predetermined etching depth of the light emitting diode; dry etching through a portion of the light emitting diode which is not protected by the patterned oxide layer to form a plurality of depressions on the light emitting diode; and removing the oxide layer from the selected layer. The light emitting diode is patterned so that more light beams can be emitted. Therefore, light extraction efficiency is enhanced.08-04-2011
20100029029Method of Manufacturing Light Emitting Device - A method of manufacturing a light emitting device is provided which requires low cost, is easy, and has high throughput. The method of manufacturing a light emitting device is characterized in that: a solution containing a light emitting material is ejected to an anode or cathode under reduced pressure; a solvent in the solution is volatilized until the solution reaches the anode or cathode; and the remaining light emitting material is deposited on the anode or cathode to form a light emitting layer. A burning step for reduction in film thickness is not required after the solution application. Therefore, the manufacturing method, which requires low cost and is easy but which has high throughput, can be provided.02-04-2010
20100029028METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DEVICE - A method of manufacturing an organic light emitting device by which a pixel defining layer can be easily formed. The method includes: forming a first electrode on a substrate; forming a photoresist layer to cover the first electrode; patterning the photoresist layer and forming a blocking layer so that the blocking layer is on a side of the first electrode opposite to a side facing the substrate; forming a pixel defining layer on the substrate to cover side ends of the first electrode; removing the blocking layer and exposing the side of the first electrode contacting the blocking layer; forming an intermediate layer including an organic light emitting layer on the side of the first electrode that is exposed by removing the blocking layer; and forming a second electrode on the intermediate layer.02-04-2010
20100022040METHOD FOR PRODUCING LIGHT-EMITTING DEVICE - [Object] To restrain color variation in light emitted from a light-emitting device.01-28-2010
20100022041THIN FILM TRANSISTOR ARRAY PANEL INCLUDING LAYERED LINE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a thin film transistor array panel comprising an insulating substrate; a gate line formed on the insulating substrate; a gate insulating layer formed on the gate line; a drain electrode and a data line having a source electrode formed on the gate insulating layer, the drain electrode being adjacent to the source electrode with a gap therebetween; and a pixel electrode coupled to the drain electrode, wherein at least one of the gate line, the data line, and the drain electrode comprises a first conductive layer comprising a conductive oxide and a second conductive layer comprising copper (Cu).01-28-2010
20110070674GALLIUM NITRIDE-BASED III-V GROUP COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The present invention relates to a gallium nitride-based compound semiconductor device and a method of manufacturing the same. According to the present invention, there is provided a gallium nitride-based III-V group compound semiconductor device comprising a gallium nitride-based semiconductor layer and an ohmic electrode layer formed on the gallium nitride-based semiconductor layer. The ohmic electrode layer comprises a contact metal layer, a reflective metal layer, and a diffusion barrier layer.03-24-2011
20130143342METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making light emitting diode is provided. The method includes following steps. A substrate is provided. A first semiconductor layer is grown on a surface of the substrate. A patterned mask layer is located on a surface of the first semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures, a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed first semiconductor layer is etched to form a protruding pair. A number of three-dimensional nano-structures are formed by removing the patterned mask layer. An active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. A first electrode is electrically connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer.06-06-2013
20110111540METHOD OF FABRICATING FLAT PANEL DISPLAY - Exemplary embodiments provide a flat panel display and method for forming the same including a substrate having a pixel driving circuit region and an emission region, a thin film transistor in the pixel driving circuit region, and a pixel electrode on the same layer as the source and drain electrodes. The thin film transistor may include a semiconductor layer, a gate electrode, and source and drain electrodes. The pixel electrode may contact one end of the semiconductor layer of the thin film transistor. The source and drain electrodes and the pixel electrode may be stacked structures having a first metal layer, a second metal layer, and a transparent conductive layer.05-12-2011
20080220551DISPLAY PANELS AND FABRICATION METHODS THEREOF - A display panel including a pixel array region. The pixel array region includes a plurality of pixel cells disposed in a matrix configuration. Each pixel cell has an active device. A relative position of a first active device in a first pixel cell among the pixel cells is different from that of a second active device in a second pixel cell among the pixel cells.09-11-2008
20120040481METHOD OF MANUFACTURING TRANSFLECTIVE LIQUID CRYSTAL DISPLAY PANEL - A method of manufacturing a transflective liquid crystal display panel includes the following steps. A substrate is provided. A first patterned conductive layer is formed on the substrate to form a gate electrode and a reflective electrode. A first insulating layer is formed on the first patterned conductive layer and the substrate. A patterned semiconductor layer is formed on the first insulating layer. A second patterned conductive layer is formed on the first insulating layer and the patterned semiconductor layer to form a source/drain electrode and a patterned reflective layer. A second insulating layer is formed on the second patterned conductive layer and the first insulating layer. Contact holes are formed in the first and the second insulating layer. A transmissive pixel electrode is formed and filled into the contact holes to be electrically connected respectively to the drain electrode, the reflective electrode, and the patterned reflective layer.02-16-2012
20100330716ELECTROLUMINESCENT DEVICE HAVING IMPROVED LIGHT OUTPUT - An electroluminescent device including a transparent substrate, a securing layer, a light scattering layer, an electroluminescent unit including a transparent electrode layer, a light emitting element including at least one light emitting layer, and a reflecting electrode layer in that order, wherein the light scattering layer includes one monolayer of inorganic particles having an index of refraction larger than that of the light emitting layer and wherein the securing layer holds the inorganic particles in the light scattering layer.12-30-2010
20120045857METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE - A method for manufacturing light emitting device is revealed. Firstly, provide a substrate. Then arrange a light emitting unit on the substrate. Next form at least one electrode and arrange at least one protective layer on the electrode. The protective layer is to prevent a phosphor layer following formed on the light emitting unit from covering the electrode. After forming the phosphor layer, flatten the phosphor layer and the protective layer. That means to remove part of the phosphor layer over the protective layer and the protective layer. Thus the electrode is not affected by the phosphor layer and conductivity of the electrode is improved to resolve phosphor thickness and uniformity problems of the light emitting device. Therefore, the thickness of the light emitting device with LED is effectively reduced and stability of white color temperature control is significantly improved.02-23-2012
20120003766LIGHT EMITTING DIODE HAVING A THERMAL CONDUCTIVE SUBSTRATE AND METHOD OF FABRICATING THE SAME - Disclosed are a light emitting diode having a thermal conductive substrate and a method of fabricating the same. The light emitting diode includes a thermal conductive insulating substrate. A plurality of metal patterns are spaced apart from one another on the insulating substrate, and light emitting cells are located in regions on the respective metal patterns. Each of the light emitting cells includes a P-type semiconductor layer, an active layer and an N-type semiconductor layer. Meanwhile, metal wires electrically connect upper surfaces of the light emitting cells to adjacent metal patterns. Accordingly, since the light emitting cells are operated on the thermal conductive substrate, a heat dissipation property of the light emitting diode can be improved.01-05-2012
20120009704Vertical cavity surface emitting laser and method of manufacturing thereof - A vertical cavity surface emitting laser capable of reducing parasitic capacitance while suppressing power consumption, and a method of manufacturing thereof are provided. The vertical cavity surface emitting laser includes a columnar mesa including, on a substrate, a first multilayer reflector, an active layer, and a second multilayer reflector in order from the substrate side, and also including a current narrowing layer. The columnar portion of the mesa including the active layer and the current narrowing layer is formed within a region opposed to the first multilayer reflector and a region opposed to the second multilayer reflector, and a cross section area of the columnar portion is smaller than a cross section area of the second multilayer reflector.01-12-2012
20110165710DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate includes a gate electrode, a gate insulating layer, and a semiconductor layer that are sequentially formed on a substrate. Also, the display substrate includes a color filter layer formed on the substrate and exposing a portion of the semiconductor layer, and source and drain electrodes that each overlap with the semiconductor layer and the color filter layer. The gate electrode, the gate insulating layer, and the semiconductor layer have the same shape as each other, and the gate electrode is insulated from the gate insulating layer and the semiconductor layer by the color filter layer.07-07-2011
20120156814Phase-shift mask with assist phase regions - A phase-shift mask having a checkerboard array and a surrounding sub-resolution assist phase pattern. The checkerboard array comprises alternating phase-shift regions R that have a relative phase difference of 180 degrees. The sub-resolution assist phase regions R′ reside adjacent corresponding phase-shift regions R and have a relative phase difference of 180 degrees thereto. The sub-resolution assist phase regions R′ are configured to mitigate undesirable edge effects when photolithographically forming photoresist features. Method of forming LEDs using the phase-shift mask are also disclosed.06-21-2012
20120208308METHOD MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device having a stacked body of nitride semiconductor including a light emitting layer. The method can include selectively etching a substrate in an atmosphere containing chlorine and nitrogen, using a carbon-containing mask formed on a surface of the substrate translucent to light emission emitted from the light emitting layer. The method can include forming a nitride semiconductor layer on the etched surface of the substrate, the nitride semiconductor having a higher refractive index than the substrate. In addition, the method can include forming the stacked body including the nitride semiconductor layer on the substrate.08-16-2012
20120070926METHOD FOR PRODUCING A LIGHT-EMITTING DIODE - A method for producing a light-emitting diode includes providing a light-emitting diode chip including a semiconductor body, and applying a luminescence conversion material to an outer area of the semiconductor body by thermal spraying such that at least part of electromagnetic radiation generated during operation of the light-emitting diode impinges on the luminescence conversion material, or providing a radiation-transmissive carrier, applying a luminescence conversion material to an outer area of the carrier by thermal spraying, and arranging the carrier at a radiation exit area of the light-emitting diode chip such that at least part of electromagnetic radiation generated during operation of the light-emitting diode impinges on the luminescence conversion material.03-22-2012
20120070925Method for Producing a Thin-Film Semiconductor Chip - Manufacturing methods for a thin-film semiconductor chip based on a III/V-III/V semiconductor compound material and capable of generating electromagnetic radiation. In one method, a succession of active layers is applied to a growth substrate. Applied to the reverse side of the active layers is a dielectric layer. Laser energy is introduced into a defined volumetric section of the dielectric layer to form an opening. Subsequently, a metallic layer is applied to form a succession of reflective layers, to fill the opening with metallic material and to create a reverse-side electrically conductive contact point to the reverse side of the succession of active layers. Pursuant to another method, a succession of reflective layers is applied to the active layers and laser energy is applied to a volumetric section of the reflective layers, to create a reverse-side electrically conductive contact point.03-22-2012
20120070924METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING DEVICE - Disclosed is a method for manufacturing a semiconductor light-emitting device, which carries out a wet-etching process after a dry-etching process so as to form protrusions in a surface of a substrate for growing a nitride semiconductor material thereon. The method comprises coating a substrate with photoresist; forming a mask pattern on the substrate by selectively removing the photoresist; forming protrusions on the substrate by dry-etching the substrate with the mask pattern through the use of etching gas; wet-etching the dry-etched substrate through the use of etching solution; forming a first semiconductor layer on the substrate including the protrusions; forming an active layer on the first semiconductor layer; forming a second semiconductor layer on the active layer; etching predetermined portions of the active layer and second semiconductor layer until the first semiconductor layer is exposed; and forming a first electrode on a predetermined portion of the first semiconductor layer, wherein the active layer and second semiconductor layer are not formed on the predetermined portion of the first semiconductor layer, and forming a second electrode on the second semiconductor layer.03-22-2012
20110086451FLAT PANEL DISPLAY AND METHOD OF FABRICATING THE SAME - A flat panel display, and method of fabricating the same, including a substrate having a display portion and a pad that is arranged on the substrate and is electrically coupled with the display portion. The pad includes a pad electrode arranged on the substrate, a passivation layer arranged on the pad electrode and having only one contact hole that exposes the pad electrode, and a transparent electrode arranged on the passivation layer and the pad electrode. The passivation layer may alternatively have a plurality of contact holes that expose the pad electrode. In this case, the reflective layer pattern is arranged on the passivation layer and the pad electrode, and it exposes portions of the pad electrode in the contact holes. Furthermore, the transparent electrode would be arranged on the reflective layer pattern and the exposed portions of the pad electrode.04-14-2011
20110039360Selective Decomposition Of Nitride Semiconductors To Enhance LED Light Extraction - A method of texturing a surface within or immediately adjacent to a template layer of a LED is described. The method uses a texturing laser directed through a substrate to decompose and pit a semiconductor material at the surface to be textured. By texturing the surface, light trapping within the template layer is reduced. Furthermore, by patterning the arrangement of pits, metal coating each pit can be arranged to spread current through the template layer and thus through the n-doped region of a LED.02-17-2011
20110065220THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a thin film transistor array panel comprising: an insulating substrate; a gate line formed on the insulating substrate and having a gate electrode; a gate insulating layer formed on the gate line; a semiconductor formed on the gate insulating layer and overlapping the gate electrode; diffusion barriers formed on the semiconductor and containing nitrogen; a data line crossing the gate line and having a source electrode partially contacting the diffusion barriers; a drain electrode partially contacting the diffusion barriers and facing the source electrode on the gate electrode; and a pixel electrode electrically connected to the drain electrode.03-17-2011
20110104836METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT AND OPTOELECTRONIC COMPONENT - In a method for producing an optoelectronic component, a growth substrate having a first coefficient of thermal expansion is provided. A multilayered buffer layer sequence is applied thereto. A layer sequence having a second coefficient of thermal expansion—different than the first coefficient of thermal expansion—is subsequently deposited epitaxially. It furthermore comprises an active layer for emitting electromagnetic radiation. A carrier substrate is subsequently applied on the epitaxially deposited layer sequence. The growth substrate is removed and the multilayered buffer layer sequence is structured in order to increase a coupling-out of electromagnetic radiation. Finally, contact is made with the epitaxially deposited layer sequence.05-05-2011
20110104837GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE HAVING HIGH EMISSION EFFICIENCY AND METHOD OF MANUFACTURING THE SAME - The present invention provides a gallium nitride based compound semiconductor light-emitting device having high light emission efficiency and a low driving voltage Vf. The gallium nitride based compound semiconductor light-emitting device includes a p-type semiconductor layer, and a transparent conductive oxide film that includes dopants and is formed on the p-type semiconductor layer. A dopant concentration at an interface between the p-type semiconductor layer and the transparent conductive oxide film is higher than the bulk dopant concentration of the transparent conductive oxide film. Therefore, the contact resistance between the p-type semiconductor layer and the transparent conductive oxide film is reduced.05-05-2011
20100093121SYSTEM AND METHOD FOR DIFFERENTIATING PICTURES AND TEXTS - A dual emitting device includes a transparent substrate and an array of pixels. The array of pixels is disposed on the transparent, and each pixel of the array includes at least one first sub-pixel and at least one second sub-pixel. The first sub-pixel includes a first OLED driven by a first TFT, and a first sheltering layer on the first OLED. The second sub-pixel includes a second OLED driven by a second TFT, and a second sheltering layer formed between the transparent substrate and the second OLED.04-15-2010
20100093119RESIN COMPOSITION FOR PRINTING PLATE - Disclosed is a polymer having excellent solvent resistance which can be produced by using a polycarbonate diol having a repeating unit represented by the formula (1) and/or (2), having a hydroxyl group at both termini, and having a number average molecular weight of from 300 to 50,000:04-15-2010
20100093120LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A light emitting device and a method of manufacturing the same are provided. The light emitting device comprises a substrate, a gate electrode positioned on the substrate, a first insulating layer positioned on the substrate comprising the gate electrode, an amorphous silicon layer positioned on the first insulating layer so that a predetermined area thereof corresponds to the gate electrode, ohmic layers that positioned on a predetermined area of the amorphous silicon layer, the ohmic layers defining a source area and a drain area, a source electrode or a drain electrode electrically connected to any one of the ohmic layers and a cathode that is electrically connected to the other one of the ohmic layers, a second insulating layer positioned on the substrate comprising the source electrode or the drain electrode and the cathode, the second insulating layer comprising an opening exposing a portion of the cathode, an emitting layer positioned within the opening, and an anode positioned on the substrate comprising the emitting layer.04-15-2010
20120315714TRANSPARENT POLARIZED LIGHT-EMITTING DEVICE - A polarized light-emitting device is fabricated by a method that includes forming a radiation-emitting layer. The radiation-emitting layer includes a radiation-emitting material that emits radiation having a wavelength included in an emission wavelength band. The radiation-emitting material is disposed between a transparent anode and a transparent cathode. An optically active reflective layer is disposed on the polarized light-emitting device. The optically active reflective layer is configured to reflect radiation having a wavelength included in a reflection wavelength band of the optically active reflective layer. The reflection wavelength band of the optically active reflective layer is adjusted to at least partially encompass the emission wavelength band of the radiation-emitting layer.12-13-2012
20120164770Radiation-Emitting Body and Method for Producing a Radiation-Emitting Body - A radiation-emitting body comprising a layer sequence having an active region for generating electromagnetic radiation, a coupling-out layer for coupling out the generated radiation, said coupling-out layer being arranged on a first side of the layer sequence, a reflection layer for reflecting the generated radiation, said reflection layer being arranged on a second side opposite the first side, and an interface of the layer sequence which faces the reflection layer and which has a lateral patterning having projecting structure elements, wherein the reflection layer is connected to the layer sequence in such a way that the reflection layer has a patterning corresponding to the patterning of the interface. A method for producing a radiation-emitting body is furthermore specified.06-28-2012
20090130788FLAT PANEL DISPLAY DEVICE AND FABRICATING METHOD THEREOF - A top-emitting organic light-emitting device can prevent a voltage drop by electrically coupling a cathode bus line to a cathode electrode. A method for fabricating the same is also disclosed. The flat panel display device comprises an insulating substrate having a pixel region and a non-pixel region, a first electrode arranged in the pixel region. a second electrode arranged in the pixel region and the non-pixel region, an organic emission layer and a charge transporting layer formed between the first electrode and the second electrode of the pixel region, and an electrode line formed in the pixel region and the non-pixel region. The electrode line and the second electrode are electrically and directly coupled to each other in the non-pixel region.05-21-2009
20120214267ROUGHENING METHOD AND METHOD FOR MANUFACTURING LIGHT-EMITTING DIODE HAVING ROUGHENED SURFACE - The present invention relates to a novel method for roughening an epitaxy structure layer, including: providing an epitaxy structure layer; and etching a surface of the epitaxy structure layer by an excimer laser having an energy density of 1000 mJ/cm08-23-2012
20120129283LIGHT EMITTING DEVICE AND METHOD FOR ENHANCING LIGHT EXTRACTION THEREOF - A method for enhancing light extraction of a light emitting device is disclosed. The method includes the steps of: providing a site layer on the light emitting device; placing a protection layer on the site layer; forming an array of pores through the protection layer and the site layer; and growing on the site layer an oxide layer, having a plurality of rods, each of which is formed in one of the pores. The shapes of the rods can be well controlled by adjusting reactive temperature, time and N05-24-2012
20120164769LIQUID CRYSTAL DISPLAY DEVICE HAVING A LIGHT-SENSING THIN FILM TRANSISTOR DISPOSED AT A PIXEL REGION - The disclosure describes a liquid crystal display device with a sensing function and a method of fabricating the same. The device comprising gate and data lines crossing each other on a substrate, so as to define a pixel region including a pixel electrode; a first switching thin film transistor disposed at a crossing of the gate and data lines; a sensing thin film transistor, disposed at a predetermined portion of the pixel region, that senses external light; a sensing storage capacitor that stores a signal sensed by the sensing thin film transistor; and a second switching thin film transistor that receives the sensing signal stored and reads information that is externally inputted, wherein the sensing storage capacitor and the second switching thin film transistor are provided with a reflective region including a reflective electrode.06-28-2012
20100210051FACET EXTRACTION LED AND METHOD FOR MANUFACTURING THE SAME - A facet extraction LED improved in light extraction efficiency and a manufacturing method thereof. A substrate is provided. A light emitting part includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer sequentially stacked on the substrate. A p-electrode and an n-electrode are connected to the p-type semiconductor layer and the n-type semiconductor layer, respectively. The p- and n-electrodes are formed on the same side of the LED. The light emitting part is structured as a ring.08-19-2010
20120252146PHOTONIC QUANTUM RING LASER AND FABRICATION METHOD THEREOF - A photonic quantum ring (PQR) laser includes an active layer having a multi-quantum-well (MQW) structure and etched lateral face. The active layer is formed to be sandwiched between p-GaN and n-GaN layers epitaxially grown on a reflector disposed over a support substrate. A coating layer is formed over an outside of the lateral faces of the active alyer, and upper electrode is electrically connected to an upper portion of the n-GaN layer, and a distributed Bragg reflector (DBR) is formed over the n-GaN layer and the upper electrode. Accordingly, the PQR laser is capable of oscillating a power-saving vertically dominant 3D multi-mode laser suitable for a low power display device, prevent the light speckle phenomenon, and generate focus-adjusted 3D soft light.10-04-2012
20120252145METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE AND MASK FOR APPLICATION OF PASTE USED THEREFOR - Provided are a mask for an application of paste and a method of manufacturing a semiconductor light emitting device by using the same. The method includes preparing a light emitting structure including first and second conductive semiconductor layers and an active layer disposed therebetween, which has at least one electrode formed on a surface of the light emitting structure; disposing a mask having an open part exposing a portion of the surface of the light emitting structure therethrough and a recess part corresponding the electrode in a region thereof on a surface of the light emitting structure; and applying wavelength conversion material-containing paste to the surface of the light emitting structure through the open part.10-04-2012
20120171790SURFACE EMITTING LASER, METHOD FOR PRODUCING SURFACE EMITTING LASER, AND IMAGE FORMING APPARATUS - A surface emitting laser includes a lower multilayer mirror, an active layer, and an upper multilayer mirror stacked onto a substrate. A first current confinement layer having a first electrically conductive region and a first insulating region is formed above or below the active layer using a first trench structure. A second current confinement layer having a second electrically conductive region and a second insulating region is formed above or below the first current confinement layer using a second trench structure. The first and second trench structures extend from a top surface of the upper multilayer mirror towards the substrate such that the second trench structure surrounds the first trench structure. When the surface emitting laser is viewed in an in-plane direction of the substrate, a boundary between the first electrically conductive region and the first insulating region is disposed inside the second electrically conductive region.07-05-2012
20120220061ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY APPARATUS - An organic light emitting display (OLED) apparatus and a method of manufacturing the same, the OLED apparatus including: a substrate; an active layer formed on the substrate; a gate electrode insulated from the active layer; source and drain electrodes insulated from the gate electrode and electrically connected to the active layer; a pixel defining layer formed on the source and drain electrodes, having an aperture to expose one of the source and drain electrodes; an intermediate layer formed in the aperture and comprising an organic light emitting layer; and a facing electrode which is formed on the intermediate layer. One of the source and drain electrodes has an extension that operates as a pixel electrode. The aperture exposes the extended portion. The intermediate layer is formed on the extended portion.08-30-2012
20100047945Methods Of Forming Particle-Containing Materials - The invention includes methods of forming particle-containing materials, and also includes semiconductor constructions comprising particle-containing materials. One aspect of the invention includes a method in which a first monolayer is formed across at least a portion of a semiconductor substrate, particles are adhered to the first monolayer, and a second monolayer is formed over the particles. Another aspect of the invention includes a construction containing a semiconductor substrate and a particle-impregnated conductive material over at least a portion of the semiconductor substrate. The particle-impregnated conductive material can include tungsten-containing particles within a layer which includes tantalum or tungsten.02-25-2010
20100047944Light-emitting element with improved light extraction efficiency, light-emitting device including the same, and methods of fabricating light-emitting element and light-emitting device - Provided are a light-emitting element, a light-emitting device including the same, and methods of fabricating the light-emitting element and the light-emitting device. The light-emitting element includes a substrate on which a dome pattern is formed and a light-emitting structure conformally formed on the dome pattern. The light-emitting structure includes a first conductive layer of a first conductivity type, a light-emitting layer, and a second conductive layer of a second conductivity type sequentially stacked on the substrate. The light-emitting element also includes a first electrode formed on the first conductive layer and a second electrode formed on the second conductive layer.02-25-2010
20090104722METHOD FOR MANUFACTURING PIXEL STRUCTURE - A method for manufacturing a pixel structure includes providing a substrate having an active device thereon and forming a dielectric layer covering the active device. The dielectric layer has a contact hole disposed over the active device. Next, a first photoresist layer is formed on the dielectric layer over the active device, and a transparent conductive layer is formed to cover a portion of the dielectric layer and the first photoresist layer. The transparent conductive layer is electrically connected to the active device via the contact hole. Besides, the transparent conductive layer is irradiated with use of a laser beam, and a portion of the transparent conductive layer on the first photoresist layer is removed, such that the other portion of the transparent conductive layer on the portion of the dielectric layer forms a pixel electrode. The first patterned photoresist layer is then removed.04-23-2009
20100273280LED WITH SUBSTRATE MODIFICATIONS FOR ENHANCED LIGHT EXTRACTION AND METHOD OF MAKING SAME - The surface morphology of an LED light emitting surface is changed by applying processes, such as a reactive ion etch (RIE) process to the light emitting surface. In one embodiment, the changed surface morphology takes the form of a moth-eye surface. The surface morphology created by the RIE process may be emulated using different combinations of non-RIE processes such as grit sanding and deposition of a roughened layer of material or particles followed by dry etching.10-28-2010
20100009477SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a semiconductor light emitting device and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes a substrate, at least two light emitting cells located on the substrate and formed by stacking semiconductor material layers, a reflection layer and a transparent insulating layer sequentially stacked between the light emitting cells, and a transparent electrode covering the upper surface of the light emitting cells.01-14-2010
20100009476SUBSTRATE STRUCTURE AND METHOD OF REMOVING THE SUBSTRATE STRUCTURE - A method of removing a substrate structure is described. A plurality of pillars is formed on a substrate by using a photolithography etching process. A group III nitride semiconductor layer is grown on the plurality of pillars. The plurality of pillars is etched to separate the group III nitride semiconductor layer from the substrate by using a chemical etching process.01-14-2010
20120220060METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING APPARATUS - There is provided a method for manufacturing a light-emitting element comprising a semiconductor layered structure of Group III-V compound semiconductor layers; the manufacturing method including a step of forming a projection/depression structure on a light extraction surface of the semiconductor layered structure using as an etchant an aqueous solution containing hydrobromic acid.08-30-2012
20090061551Light Emitting Apparatus and Method of Fabricating the Same - Although an ink jet method known as a method of selectively forming a film of a high molecular species organic compound, can coat to divide an organic compound for emitting three kinds (R, G, B) of light in one step, film forming accuracy is poor, it is difficult to control the method and therefore, uniformity is not achieved and the constitution is liable to disperse. In contrast thereto, according to the invention, a film comprising a high molecular species material is formed over an entire face of a lower electrode connected to a thin film transistor by a coating method and thereafter, the film comprising the high molecular species material is etched by etching by plasma to thereby enable to selectively form a high molecular species material layer. Further, the organic compound layer is constituted by a material for carrying out luminescence of white color or luminescence of single color and combined with a color changing layer or a coloring layer to thereby realize full color formation.03-05-2009
20100291716ORGANIC ELECTROLUMINESCENCE DEVICE AND METHOD OF MANUFACTURING THE SAME - An EL device with low manufacturing costs and improved yield due to simplified structure and use of an organic light emitting transistor and a method of manufacturing the same are disclosed. The EL device includes: a first organic light emitting transistor including a first source electrode; a first drain electrode opposing the first source electrode; a first intermediate layer including at least an emission layer formed between the first source electrode and the first drain electrode; and a first gate electrode which is insulated from the first source electrode, the first drain electrode, and the first intermediate layer and surrounds the first intermediate layer; and a second organic light emitting transistor including a second source electrode; a second drain electrode opposing the second source electrode; a second intermediate layer including at least an emission layer formed between the second source electrode and the second drain electrode; and a second gate electrode which is insulated from the second source electrode, the second drain electrode, and the second intermediate layer, surrounds the second intermediate layer, and is connected to the first drain electrode.11-18-2010
20110003416LIGHT EMITTING DIODE HAVING VERTICAL TOPOLOGY AND METHOD OF MAKING THE SAME - An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.01-06-2011
20110003415HIGH EFFICIENCY LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - A high efficiency light-emitting diode and a method for manufacturing the same are described. The high efficiency light-emitting diode comprises: a permanent substrate; a first contact metal layer and a second contact metal layer respectively deposed on two opposite surfaces of the permanent substrate; a bonding layer deposed on the second contact metal layer; a diffusion barrier layer deposed on the bonding layer, wherein the permanent substrate, the bonding layer and the diffusion barrier layer are electrically conductive; a reflective metal layer deposed on the diffusion barrier layer; a transparent conductive oxide layer deposed on the reflective metal layer; an illuminant epitaxial structure deposed on the transparent conductive oxide layer, wherein the illuminant epitaxial structure includes a first surface and a second surface opposite to the first surface; and a second conductivity type compound electrode pad deposed on the second surface of the illuminant epitaxial structure.01-06-2011
20110003414ORGANIC LIGHT EMITTING DIODE DISPLAY AND FABRICATING METHOD THEREOF - An organic light emitting diode display device includes a switch TFT and a drive TFT formed on a substrate; an overcoat layer formed on the TFTs; a drain contact hole exposing portions of a drain electrode of the drive TFT by removing portions of the overcoat layer; a first electrode contacting to the drain electrode of the drive TFT; a bank pattern exposing an aperture area of a pixel; an organic layer formed on the first electrode; and a second electrode formed on the organic layer, wherein the bank pattern blocks regions where the drain contact hole is formed.01-06-2011
20110003413MANUFACTURING METHOD OF SEMICONDUCTOR PHOTONIC DEVICE SUBSTRATE - In a manufacturing method of a semiconductor photonic device substrate, before multi-layer films different in material composition are successively and gradually crystal-grown in one chamber, an inter-layer growth rate model showing a relation in growth rate between each layer is defined, a growth rate of a film corresponding to at least one or more layers is obtained by actual crystal growth using an individual substrate, a growth rate of a film corresponding to other layers is estimated from the obtained growth rate by the inter-layer growth rate model, and a growth time is determined in accordance with a film thickness of each layer of the semiconductor photonic device substrate based on the actually obtained growth rate and the estimated growth rate. These steps are carried out by using a computer system connected to an MOCVD equipment, and then, a crystal growth of the semiconductor photonic device substrate is performed.01-06-2011
20120322186METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT AND OPTOELECTRONIC COMPONENT - In a method for producing an optoelectronic component, a growth substrate having a first coefficient of thermal expansion is provided. A multilayered buffer layer sequence is applied thereto. A layer sequence having a second coefficient of thermal expansion—different than the first coefficient of thermal expansion—is subsequently deposited epitaxially. It furthermore comprises an active layer for emitting electromagnetic radiation. A carrier substrate is subsequently applied on the epitaxially deposited layer sequence. The growth substrate is removed and the multilayered buffer layer sequence is structured in order to increase a coupling-out of electromagnetic radiation. Finally, contact is made with the epitaxially deposited layer sequence.12-20-2012
20120322185LIGHT-EMITTING DEVICE HAVING A ROUGHENED SURFACE WITH DIFFERENT TOPOGRAPHIES - This invention provides an optoelectronic semiconductor device having a rough surface and the manufacturing method thereof. The optoelectronic semiconductor device comprises a semiconductor stack having a rough surface and an electrode layer overlaying the semiconductor stack. The rough surface comprises a first region having a first topography and a second region having a second topography. The method comprises the steps of forming a semiconductor stack on a substrate, forming an electrode layer on the semiconductor stack, thermal treating the semiconductor stack, and wet etching the surface of the semiconductor stack to form a rough surface.12-20-2012
20120322184BAND OFFSET IN ALINGAP BASED LIGHT EMITTERS TO IMPROVE TEMPERATURE PERFORMANCE - Methods for improving the temperature performance of alInGaP based light emitters. Nitrogen is added to the quantum wells in small quantities. Nitrogen is added in a range of about 0.5 percent to 2 percent. The addition of nitrogen increases the conduction band offset and increases the separation of the indirect conduction band. To keep the emission wavelength in a particular range, the concentration of In in the quantum wells may be decreased or the concentration of Al in the quantum wells may be increased. Because the depth of the quantum wells in the valence band is more than is required although the addition of nitrogen reduces the depth of the quantum wells in the valence band. The net result is an increase in the conduction band offset and an increase in the separation of the indirect conduction band.12-20-2012
20120322182LIGHT BLOCKING MEMBER HAVING VARIABLE TRANSMITTANCE, DISPLAY PANEL INCLUDING THE SAME, AND MANUFACTURING METHOD THEREOF - A light blocking member having variable transmittance, a display panel including the same, and a manufacturing method thereof. A light blocking member having a variable transmittance according to one exemplary embodiment includes a polymerizable compound, a binder, and a thermochromic material that exhibits a black color at a temperature below a threshold temperature and becomes transparent at a temperature above the threshold temperature.12-20-2012
20120322181DEPOSITION OF THIN FILM DIELECTRICS AND LIGHT EMITTING NANO-LAYER STRUCTURES - A method is disclosed for deposition of thin film dielectrics, and in particular for chemical vapour deposition of nano-layer structures comprising multiple layers of dielectrics, such as, silicon dioxide, silicon nitride, silicon oxynitride and/or other silicon compatible dielectrics. The method comprises post-deposition surface treatment of deposited layers with a metal or semiconductor source gas, e.g. a silicon source gas. Deposition of silicon containing dielectrics preferably comprises silane-based chemistry for deposition of doped or undoped dielectric layers, and surface treatment of deposited dielectric layers with silane. Surface treatment provides dielectric layers with improved layer-to-layer uniformity and lateral continuity, and substantially atomically flat dielectric layers suitable for multilayer structures for electroluminescent light emitting structures, e.g. active layers containing rare earth containing luminescent centres. Doped or undoped dielectric thin films or nano-layer dielectric structures may also be provided for other semiconductor devices.12-20-2012
20120322183METHOD FOR FABRICATING LIGHT EMITTING DIODE - A method for fabricating a light emitting diode includes steps of: forming a light emitting structure of the light emitting diode on a substrate; arranging a photoresist layer on a first semiconductor layer of the light emitting structure; depositing a plurality of dielectric material structures on the first semiconductor layer through a plurality of voids of the photoresist layer; removing the photoresist layer to form a plurality of voids between the plurality of dielectric material structures; forming a plurality of metal material structures in the plurality of voids; and forming a reflective layer on the plurality of dielectric material structures and the plurality of metal material structures.12-20-2012
20110045621VERTICAL CAVITY SURFACE EMITTING LASER HAVING MULTIPLE TOP-SIDE CONTACTS - A VCSEL with undoped mirrors. An essentially undoped bottom DBR mirror is formed on a substrate. A periodically doped first conduction layer region is formed on the bottom DBR mirror. The first conduction layer region is heavily doped at a location where the optical electric field is at about a minimum. An active layer, including quantum wells, is on the first conduction layer region. A periodically doped second conduction layer region is connected to the active layer. The second conduction layer region is heavily doped where the optical electric field is at a minimum. An aperture is formed in the epitaxial structure above the quantum wells. A top mirror coupled to the periodically doped second conduction layer region. The top mirror is essentially undoped and formed in a mesa structure. An oxide is formed around the mesa structure to protect the top mirror during wet oxidation processes.02-24-2011
20110045620Light emitting diode integrated with lens, line printer head, and method of manufacturing the light emitting diode - Provided are a light emitting diode unit including a light emitting diode integrated with a lens, a line printer head using the light emitting diode, and a method of manufacturing the light emitting diode. The light emitting diode unit includes the light emitting diode layer bonded to a transparent substrate after removing a growth substrate on which the light emitting layer is grown, and a lens that refracts light emitted from the light emitting diode is formed on the transparent substrate.02-24-2011
20110045619Methods and apparatus for forming uniform layers of phosphor material on an LED encapsulation structure - A method for forming wavelength-conversion LED encapsulant structure includes forming an LED encapsulant structure body, forming a layer of a wavelength-conversion material on a first surface, disposing the first surface to cause the wavelength-conversion material to be in contact with a surface region of the LED encapsulant structure body, applying a pressure between the first surface and the surface region of the LED encapsulant structure body, and causing at least a portion of the wavelength-conversion material to be at least partially embedded in the surface region of the LED encapsulant structure body.02-24-2011
20100203662LIGHT EMITTING DEVICE - A light emitting device includes a substrate having a first surface and a second surface not parallel to the first surface, and a light emission layer disposed over the second surface to emit light. The light emission layer has a light emission surface which is not parallel to the first surface.08-12-2010
20100203660Semiconductor light emitting element and manufacturing method thereof - A semiconductor light-emitting device (LE08-12-2010
20100203659METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE - A method for manufacturing a light emitting device, includes: forming a first multilayer body including a first substrate, a first semiconductor layer provided on the first substrate and having a light emitting layer, and a first metal layer provided on the first semiconductor layer; forming a second multilayer body including a second substrate having a thermal expansion coefficient different from a thermal expansion coefficient of the first substrate, and a second metal layer provided on the second substrate; a first bonding step configured to heat the first metal layer and the second metal layer being in contact with each other; removing the first substrate after the first bonding step; and a second bonding step configured to perform, after the removing, heating at a temperature higher than a temperature of the first bonding step.08-12-2010
20120270345LED with Upstanding Nanowire Structure and Method of Producing Such - The present invention relates to light emitting diodes, LEDs. In particular the invention relates to a LED comprising a nanowire as an active component. The nanostructured LED according to the embodiments of the invention comprises a substrate and at an upstanding nanowire protruding from the substrate. A pn-junction giving an active region to produce light is present within the structure. The nanowire, or at least a part of the nanowire, forms a wave-guiding section directing at least a portion of the light produced in the active region in a direction given by the nanowire.10-25-2012
20110237009LCOS DISPLAY UNIT AND METHOD FOR FORMING THE SAME - An embodiment of the present invention discloses a Liquid Crystal on Silicon (LCOS) display unit, in which a Metal-Insulator-Metal (MIM) capacitor consisting of a micromirror layer, a insulation layer and a light shielding layer is formed by grounding the light shielding layer on a pixel switch circuit layer. Therefore the pixel switch circuit and the capacitor are in vertical distribution, that is, the switch circuit and the capacitor both have an allowable design area of the size of one pixel. Another embodiment of the present invention provides a method for forming a Liquid Crystal on Silicon (LCOS) display unit.09-29-2011
20100233834LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A liquid crystal display device includes opposing substrates. One of the substrates has a thin film transistor and a color filter formed thereon. A spacer formed between the substrates maintains a cell gap. A light shielding layer is formed at a lower portion of the spacer and overlaps the thin film transistor. The light shielding layer has a pattern substantially identical to the spacer. The light shielding layer and the spacer are simultaneously formed using the same photolithographic process steps.09-16-2010
20120329185DISPLAY APPARATUS AND METHOD OF FABRICATING THE SAME - A display apparatus that includes a first substrate, a second substrate, and a thin film transistor. The first substrate includes a fiber reinforced plastic substrate and a color filter layer formed on the fiber reinforced plastic substrate. The second substrate faces the first substrate. The thin film transistor is formed on the first substrate.12-27-2012
20120100648METHOD FOR MANUFACTURING LIGHT EMITTING CHIP - A method for manufacturing light emitting chips includes steps of: providing a substrate having a plurality of separate epitaxy islands thereon, wherein the epitaxy islands are spaced from each other by channels; filling the channels with an insulation material; sequentially forming a reflective layer, a transition layer and a base on the insulation material and the epitaxy islands; removing the substrate and the insulation material to expose the channels; and cutting the reflective layer, the transition layer and the base to form a plurality of individual chips along the channels.04-26-2012
20100210052THIN FILM TRANSISTOR PANEL, LIQUID CRYSTAL DISPLAY HAVING THE SAME AND METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR PANEL - A thin film transistor panel, a liquid crystal display having the same, and a method of manufacturing the thin film transistor panel are provided. The thin film transistor includes a gate line formed on an insulating substrate in a predetermined direction, a data line crossing the gate line, a thin film transistor connected to the gate line and the data line, a black matrix formed to overlap at least a portion of the gate line, the data line, and the thin film transistor, a color filter formed in a region partitioned by the black matrix, and a pixel electrode formed on the color filter and electrically connected to the thin film transistor.08-19-2010
20100167441Method of Manufacturing a Light Emitting, Photovoltaic or Other Electronic Apparatus and System - The present invention provides a method of manufacturing an electronic apparatus, such as a lighting device having light emitting diodes (LEDs) or a power generating device having photovoltaic diodes. The exemplary method includes depositing a first conductive medium within a plurality of channels of a base to form a plurality of first conductors; depositing within the plurality of channels a plurality of semiconductor substrate particles suspended in a carrier medium; forming an ohmic contact between each semiconductor substrate particle and a first conductor; converting the semiconductor substrate particles into a plurality of semiconductor diodes; depositing a second conductive medium to form a plurality of second conductors coupled to the plurality of semiconductor diodes; and depositing or attaching a plurality of lenses suspended in a first polymer over the plurality of diodes. In various embodiments, the depositing, forming, coupling and converting steps are performed by or through a printing process.07-01-2010
20130011947METHOD OF FORMING A SAMPLED GRATING AND METHOD OF PRODUCING A LASER DIODE - A method of forming a sampled grating includes the steps of preparing a substrate; preparing a nano-imprinting mold including a pattern surface on which projections and recesses are periodically formed; preparing a mask including a light obstructing portion and a light transmitting portion that are alternately provided; forming a photoresist layer and a resin portion in that order on the substrate; forming a patterned resin portion having projections and recesses by pressing the pattern surface of the mold into contact with the resin portion and hardening the resin portion while maintaining the contact; exposing a portion of the photoresist layer by irradiating the photoresist layer with exposing light through the mask and the patterned resin portion; forming a patterned photoresist layer by developing the photoresist layer; and etching the substrate using the patterned photoresist layer.01-10-2013
20130017634WAVELENGTH CONVERTING LIGHT-EMITTING DEVICES AND METHODS OF MAKING THE SAME - Wavelength converting light-emitting devices and methods of making the same are provided. In some embodiments, the devices include a phosphor material region designed to convert the wavelength of emitted light.01-17-2013
20110159617DUAL LAYER COLOR-CENTER PATTERNED LIGHT SOURCE - A method of fabricating a color laser, comprising growing a first thin layer of ionic crystal on a substrate. The crystal can comprise many types of ionic crystals, such as sodium chloride or potassium chloride. A second thin layer of a different type of ionic crystal can be deposited above the first ionic crystal layer, such as lithium fluoride or sodium fluoride. An inert metal layer can be deposited between the first and second layers of ionic crystal and above the second layer of ionic crystal. When the first and second ionic crystal layers are radiated with gamma rays, they form color centers at the spots radiated. Because of the difference in crystalline properties of the two different ionic crystal centers, their color centers have different wavelengths. Each of the ionic crystal layers emit light at different characteristic wavelengths when illuminated at their unique absorption frequencies, and can be made to lase separately.06-30-2011
20110159616METHOD OF MANUFACTURING LIGHT EMITTING DIODE - A method for making a light emitting diode is provided, which includes first providing a light emitting diode chip. The light emitting diode chip includes a substrate and a p-type semiconductor layer, an active layer and an n-type semiconductor layer sequentially formed on the substrate. And then sections with different resistance are formed in the n-type semiconductor layer by implanting ions into the n-type semiconductor layer in an ion implanter. Finally, an electrode pad is deposited on the n-type semiconductor layer. The electrical resistances of the sections increase following an increase of a distance from the electrode pad to the sections.06-30-2011
20110159615LED UNITS FABRICATION METHOD - A method for fabricating a plurality of individual light emitting diode units includes forming a GaN epitaxial layer on a sapphire substrate, forming a plurality of exhaust trenches on the GaN epitaxial layer, wherein the exhaust trenches define a plurality of individual light emitting diode units, forming a reflective layer on the GaN epitaxial layer, attaching the reflective layer to a conductive substrate, removing the sapphire substrate from the GaN epitaxial layer via a laser lift-off process, wherein a gas produced during the laser lift-off process is exhausted via the exhaust trenches, and dicing the conductive substrate along the exhaust trenches to form the plurality of individual light emitting diode units.06-30-2011
20130023073USING NON-ISOLATED EPITAXIAL STRUCTURES IN GLUE BONDING FOR MULTIPLE GROUP-III NITRIDE LEDS ON A SINGLE SUBSTRATE - A method for forming a plurality of semiconductor light emitting devices includes forming an epitaxial layer having a first type doped layer, a light emitting layer, and a second type doped layer on a first temporary substrate. A second temporary substrate is coupled to an upper surface of the epitaxial layer with a first adhesive layer. The first temporary substrate is removed from the epitaxial layer to expose a bottom surface of the epitaxial layer. A permanent semiconductor substrate is coupled to the bottom surface of the epitaxial layer with a second adhesive layer. The second temporary substrate and the first adhesive layer are removed from the upper surface of the epitaxial layer. A plurality of semiconductor light emitting devices are formed from the epitaxial layer on the permanent semiconductor substrate.01-24-2013
20130023074USING ISOLATED EPITAXIAL STRUCTURES IN GLUE BONDING FOR MULTIPLE GROUP-III NITRIDE LEDS ON A SINGLE SUBSTRATE - A method for forming a plurality of semiconductor light emitting devices includes forming an epitaxial layer having a first type doped layer, a light emitting layer, and a second type doped layer on a first temporary substrate. The epitaxial layer is separated into a plurality of epitaxial structures on the first temporary substrate. A second temporary substrate is coupled to the epitaxial layer with a first adhesive layer and the first temporary substrate is removed from the epitaxial layer. A permanent semiconductor substrate is coupled to the epitaxial layer with a second adhesive layer. The second temporary substrate and the first adhesive layer are removed from the epitaxial layer. The permanent semiconductor substrate is separated into a plurality of portions with each portion corresponding to at least one of the plurality of epitaxial structures to form a plurality of semiconductor light emitting devices.01-24-2013
20130023075Method of Forming Process Substrate Using Thin Glass Substrate and Method of Fabricating Flat Display Device Using the Same - A method for fabricating a process substrate includes: providing a first substrate; providing a substrate and an auxiliary substrate; contacting the substrate and the auxiliary substrate with each other in a vacuum state, thereby forming micro spaces of a vacuum state between the substrate and the auxiliary substrate; and increasing a pressure at the outside of the contacted substrate and auxiliary substrate to attach the substrate and the auxiliary substrate to each other by a pressure difference between the micro spaces and the outside of the contacted substrate and auxiliary substrate.01-24-2013
20080241979Multi-directional light scattering LED and manufacturing method thereof - A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed so as to form a scattering layer. A transparent conductive layer is arranged over the second semiconductor layer while further a second electrode is disposed over the transparent conductive layer. A first electrode is installed on the scattering layer. Thus light output from the LED is scattered in multi-directions.10-02-2008
20080227230Quantum dot vertical cavity surface emitting laser and fabrication method of the same - A quantum dot vertical capacity surface emitting laser (QD-VCSEL) and a method of manufacturing the same are provided. The QD-VCSEL includes a substrate, a lower distributed brag reflector (DBR) mirror formed on the substrate, an electron transport layer (ETL) formed on the lower DBR mirror, an emitting layer (EML) formed of nano-particle type group II-VI compound semiconductor quantum dots on the ETL, a hole transport layer (HTL) formed on the EML, and an upper DBR mirror formed on the HTL.09-18-2008
20080220552FABRICATING A SPATIAL LIGHT MODULATOR - A high contrast spatial light modulator for display and printing is fabricated by coupling a high active reflection area fill-ratio and non-diffractive micro-mirror array with a high electrostatic efficiency and low surface adhesion control substrate.09-11-2008
20080220550METHOD OF PRODUCING N-TYPE GROUP-13 NITRIDE SEMICONDUCTOR, METHOD OF FORMING CURRENT CONFINEMENT LAYER, METHOD OF PRODUCING SURFACE EMITTING LASER, METHOD OF CHANGING RESISTANCE OF NITRIDE SEMICONDUCTOR AND METHOD OF PRODUCING SEMICONDUCTOR LASER - The object of the present invention is to provide a method of producing an n-type group-13 nitride semiconductor which enables resistance of the n-type group-13 nitride semiconductor to be changed, as well as, a method of producing a laser using the above method to produce a current confinement structure. There is provided a method of producing an n-type group-13 nitride semiconductor, including: preparing an n-type group-13 nitride semiconductor; and irradiating the n-type group-13 nitride semiconductor with light having a wavelength of 350 nm or more to 370 nm or less so as not to change a crystal structure of the n-type group-13 nitride semiconductor before and after the light irradiation, thereby increasing resistance of the n-type group-13 nitride semiconductor.09-11-2008
20130143343METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE - A method of manufacturing a light-emitting device including a light-emitting element which emits light with a predetermined wavelength and a wavelength conversion portion including a fluorescent substance which is excited by the light emitted from the light-emitting element to emit fluorescence with a wavelength different from the predetermined wavelength, includes the followings. First, spraying so as to apply a liquid mixture containing a layered silicate mineral and a translucent ceramic precursor on the light-emitting element from a nozzle is performed while the nozzle is moved relative to the light-emitting element. Subsequently, forming of the wavelength conversion portion by heating the sprayed and applied liquid mixture is performed.06-06-2013
20130178004Method for Manufacturing Light-Emitting Device - A full-color light-emitting device is achieved with plural kinds of light-emitting elements in each of which a stacked layer of a first material layer formed selectively with a droplet discharge apparatus and a second material layer formed by vapor-deposition method using the conductive-surface plate on which a layer containing an organic compound is formed is provided between a pair of electrodes. The first material layer is a layer in which an organic compound and a metal oxide which is an inorganic compound are mixed. By adjusting the thickness of the first material layer of each light-emitting element, which is different depending on an emission color, a blue light emission component, a green light emission component, or a red light emission component among a plurality of components for white light emission can be selectively emphasized and taken out by light interference phenomenon.07-11-2013
20110269253MANUFACTURING THIN FILM TRANSISTOR ARRAY PANELS FOR FLAT PANEL DISPLAYS - A thin film transistor array panel for a flat panel display includes a substrate, a first signal line formed on the substrate, a second signal line intersecting and insulated from the first signal line, a switching element having a first terminal connected to the first signal line, a second terminal connected to the second signal line, and a third terminal, a pixel electrode connected to the third terminal of the switching element, and first and second light blocking members extending parallel to the second signal line, each being disposed on an opposite side of and partially overlapping an respective edge of the second signal line, an interval between the first and second light blocking members being in a range of from more than 1.5 μm to less than 4 μm. The array panel prevents light leakage from the display and improves its transmittance, aperture ratio and color reproducibility.11-03-2011
20130171754ELECTROLUMINESCENT DEVICES AND THEIR MANUFACTURE - A process for producing a conformal electroluminescent system. An electrically conductive base backplane film layer is applied upon a substrate. A dielectric film layer is applied upon the backplane film layer, then a phosphor film layer is applied upon the dielectric film layer. An electrode film layer is applied upon the phosphor film layer using a substantially transparent, electrically conductive material. An electrically conductive bus bar may be applied upon the electrode film layer. Preferably, the backplane film layer, dielectric film layer, phosphor film layer, electrode film layer and bus bar are aqueous-based and are applied by spray conformal coating. The electroluminescent phosphor is excitable by an electrical field established across the phosphor film layer such that the device emits electroluminescent light upon application of an electrical charge between the backplane film layer and at least one of the electrode film layer and the bus bar.07-04-2013
20130095585MULTI-FIELD ARRANGING METHOD OF LED CHIPS UNDER SINGLE LENS - A multi-field arranging method of LED chips under a single lens includes the steps of: setting a first concentric circle on a bottom of a hemispherical lens, wherein the first concentric circle is centered at an axis of the hemispherical lens; equidistantly arranging plural first LED chips on the first concentric circle; setting a second concentric circle, which is also centered at the same axis as the first concentric circle, and the second concentric circle is larger than the first concentric circle in radius; and equidistantly arranging plural second LED chips and plural third LED chips on the second concentric circle. The present invention allows the LED chips to present symmetrical light patterns through the hemispherical lens, thereby obtaining a light field with evener color mixture and evener color temperature distribution in every illuminating direction.04-18-2013
20130149803METHOD OF FABRICATING ORGANIC LIGHT EMITTING DIODE - Provided is a method of fabricating an organic light emitting diode. The method may include preparing a substrate, forming a textured portion on the substrate, the textured portion including protruding patterns randomly and irregularly arranged on the substrate, forming a planarization layer on the substrate to planarize the substrate formed with the textured portion, forming a first electrode on the planarization layer, forming an organic light emitting layer on the first electrode, and forming a second electrode on the organic light emitting layer.06-13-2013
20130149804OPTICAL SEMICONDUCTOR DEVICE AND PUMPING LIGHT SOURCE FOR OPTICAL FIBER AMPLIFIER - A semiconductor device of the invention is formed so that n-type InP current blocking layers enter the inside of p-type InP cladding layers, i.e., the n-type current blocking layers ride over the upper part of the p-type InP cladding layers, so that a distance between the n-type InP current block layers composing a current blocking region is narrower than a width of the p-type cladding layers contacting with the n-type InP current blocking layers. Thereby, the semiconductor device whose leak current in the current blocking region may be reduced which permits high-output and high-temperature operations may be readily fabricated.06-13-2013
20110275171Method of Wafer Level Purifying Light Color Emitting from a Light Emitting Semiconductor Wafer - A method of wafer level purifying light color of a LED semiconsuctor is disclosed. After a LED wafer is fabricated, multi-transparent films formed of first layer and a second layer alternatively until reaching a predetermined number deposited by e-gun deposition with an aid of ion plasma beam. The first layer is formed of an oxide layer and the second layer is formed of a metal oxide layer. The two materials, one has a high index of refraction and the other has a low index of refraction. The total multi-transparent films are about 80 to 120 layer which can narrow wave width about a central wavelength.11-10-2011
20130122620METHOD OF FORMING LIGHT CONVERTING LAYER, METHOD OF MANUFACTURING LIGHT CONVERTING MEMBER, AND METHOD OF MANUFACTURING LIGHT EMITTING DEVICE - Provided Is a method of forming a light converting layer capable of uniformly distributing fluorescent material particles, a method of manufacturing a light converting member capable of distributing fluorescent material particles, and a method of manufacturing a light emitting device capable of controlling color irregularities. The method of forming a light converting member comprising steps of, preparing fluorescent material particles, forming a bonding layer made of a resin on a base body; incorporating the fluorescent material particles in the bonding layer; and hardening the bonding layer.05-16-2013
20130157397MANUFACTURING METHOD, SURFACE-EMITTING LASER DEVICE, SURFACE-EMITTING LASER ARRAY, OPTICAL SCANNER, AND IMAGE FORMING APPARATUS - A manufacturing method for manufacturing a surface-emitting laser device includes the steps of forming a laminated body in which a lower reflecting mirror, a resonator structure including an active layer, and an upper reflecting layer having a selective oxidized layer are laminated on a substrate; etching the laminated body to form a mesa structure having the selective oxidized layer exposed at side surfaces thereof; selectively oxidizing the selective oxidized layer from the side surfaces of the mesa structure to form a constriction structure in which a current passing region is surrounded by an oxide; forming a separating groove at a position away from the mesa structure; passivating an outermost front surface of at least a part of the laminated body exposed when the separating groove is formed; and coating a passivated part with a dielectric body.06-20-2013
20120282717THIN FILM TRANSISTOR, DISPLAY DEVICE AND LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - As a wiring becomes thicker, discontinuity of an insulating film covering the wiring has become a problem. It is difficult to form a wiring with width thin enough for a thin film transistor used for a current high definition display device. As a wiring is made thinner, signal delay due to wiring resistance has become a problem. In view of the above problems, the invention provides a structure in which a conductive film is formed in a hole of an insulating film, and the surfaces of the conductive film and the insulating film are flat. As a result, discontinuity of thin films covering a conductive film and an insulating film can be prevented. A wiring can be made thinner by controlling the width of the hole. Further, a wiring can be made thicker by controlling the depth of the hole.11-08-2012
20120282716SEMICONDUCTOR MEMBER, SEMICONDUCTOR ARTICLE MANUFACTURING METHOD, AND LED ARRAY USING THE MANUFACTURING METHOD - A novel semiconductor article manufacturing method and the like are provided. A method of manufacturing a semiconductor article having a compound semiconductor multilayer film formed on a semiconductor substrate includes: preparing a member including an etching sacrificial layer (11-08-2012
20110287564LIGHT EMITTING DEVICE HAVING LIGHT EXTRACTION STRUCTURE - A light emitting device having a light extraction structure, which is capable of achieving an enhancement in light extraction efficiency and reliability, and a method for manufacturing the same. The light emitting device includes a semiconductor layer having a multi-layered structure including a light emission layer; and a light extraction structure formed on the semiconductor layer in a pattern having unit structures. Further, the wall of each of the unit structures is sloped at an angle of −45° to +45° from a virtual vertical line being parallel to a main light emitting direction of the light emitting device.11-24-2011
20110312113LIGHT-EMITTING DIODE STRUCTURE WITH ELECTRODE PADS OF SIMILAR SURFACE ROUGHNESS AND METHOD FOR MANUFACTURING THE SAME - A light-emitting diode (LED) structure and a method for manufacturing the LED structure are disclosed for promoting the recognition rate of LED chips, wherein a roughness degree of the surface under a first electrode pad of a first conductivity type is made similar to that of the surface under a second electrode pad of a second conductivity type, so that the luster shown from the first electrode pad can be similar to that from the second electrode pad, thus resolving the poor recognition problem of wire-bonding machines caused by different lusters from the first and second electrode pads.12-22-2011
20110312112LIGHT EMITTING DIODE - A light emitting diode having a substrate, an electron injection layer, an active layer, a hole injection layer, a first pad electrically connected to the hole injection layer, and a second pad electrically connected to the electron injection layer. The hole injection layer includes an activated region and a patterned non-activated region. The first pad is disposed upon the non-activated region and the first pad and the non-activated region are overlapping in the vertical direction.12-22-2011
20110312111SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.12-22-2011
20120015464METHOD OF FORMING A COLOR FILTER TOUCH SENSING SUBSTRATE - A method of forming a color filter touch sensing substrate integrates touch-sensing structures/elements of a touch panel into the inner side of the color filter substrate, which faces a thin film transistor substrate, and forms patterned assistant electrodes on the surfaces of the transparent sensing pads for decreasing the equivalent resistance of the touch-sensing structures/elements. Moreover, since an adjacent transparent conductive layer and an assistant electrode layer are patterned to form the transparent sensing pads and the patterned assistant electrodes, a simplified pattern-transferring process can be applied to the transparent sensing pads and the patterned assistant electrodes, or bridge structures can be formed from the assistant electrode layer for electrically connecting between some transparent sensing pads. Therefore, the forming process is simplified.01-19-2012
20120295378SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method of making a semiconductor light-emitting device including (A) a light-emitting portion by laminating in sequence a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; (B) a first electrode electrically connected to the first compound semiconductor layer; (C) a transparent conductive material layer on the second compound semiconductor layer; (D) an insulating layer on a transparent conductive material layer; and (E) a second reflective electrode that on the transparent conductive material layer and on the insulating layer in a continuous manner, wherein, that the areas of the active layer, the transparent conductive material layer, the insulating layer, and the second electrode S11-22-2012
20130203194METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - Sample A is produced by sequentially forming a first insulating film of SiO08-08-2013
20120088324Method for Manufacturing Evaporation Donor Substrate and Light-Emitting Device - An evaporation donor substrate which enables only a desired evaporation material to be evaporated at the time of deposition by an evaporation method, and capable of reduction in manufacturing cost by increase in use efficiency of the evaporation material and deposition with high uniformity. An evaporation donor substrate capable of controlling laser light so that a desired position of an evaporation donor substrate is irradiated with the laser light in accordance with the wavelength of the emitted laser light at the time of evaporation. Specifically, an evaporation donor substrate in which a region which reflects laser light and a region which absorbs laser light at the time of irradiation with laser light having a wavelength of greater than or equal to 400 nm and less than or equal to 600 nm at the time of evaporation are formed.04-12-2012
20120088323METHOD FOR FORMING LIGHT GUIDE LAYER IN SEMICONDUCTOR SUBSTRATE - A method for forming a light guide layer with improved transmission reliability in a semiconductor substrate, the method including forming a trench in the semiconductor substrate, forming a cladding layer and a preliminary light guide layer in the trench such that only one of opposite side end portions of the preliminary light guide layer is in contact with an inner sidewall of the trench, and performing a thermal treatment on the substrate to change the preliminary light guide layer into the light guide layer.04-12-2012
20120094409TFT-LCD ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - A liquid crystal display (LCD) array substrate and a manufacturing method thereof are provided. The manufacturing method comprises depositing a semiconductor layer, a doped semiconductor layer and a metal film for source and drain electrodes sequentially on a base substrate and then forming a data line, a source electrode, a drain electrode and a thin film transistor (TFT) channel region by a first patterning process; depositing a first insulating film and a gate metal film sequentially and then forming a gate line and a gate electrode by a second patterning process and forming an insulating layer via hole in the first insulating layer above the drain electrode; depositing a transparent conductive film and then forming a pixel electrode by a third patterning process; and forming a second insulating layer.04-19-2012
20120094408METHOD FOR PRODUCING SURFACE EMITTING SEMICONDUCTOR DEVICE - A method for producing a surface emitting semiconductor device includes a step of forming a semiconductor stacked structure including an active layer, a first semiconductor layer containing aluminum on the active layer, and a DBR portion, on the first semiconductor layer, to include alternating stacked second semiconductor layers and third semiconductor layers having different aluminum contents; a step of forming a mesa portion by etching the DBR portion and the first semiconductor layer; an oxidation step of oxidizing the first semiconductor layer from a side face of the mesa portion toward the inside of the mesa portion to form an annular oxidized region inside the first semiconductor layer; a first etching step of selectively etching an oxidized region formed in the DBR portion; and a second etching step of removing a peripheral portion of the DBR portion.04-19-2012
20130210181PROCESS FOR PRODUCING A LAYER COMPOSITE CONSISTING OF A LUMINESCENCE CONVERSION LAYER AND A SCATTERING LAYER - A process of producing a layer composite includes a luminescence conversion layer and a scattering layer, wherein a press having a first pressing tool with a cavity and a second pressing tool is used including introducing a first polymer including a luminescence conversion substance into the cavity, inserting a film between the first and second tools, closing the press and carrying out a first pressing, hardening the first polymer to form a luminescence conversion layer in the press, opening the press, wherein the luminescence conversion layer adhering to the film remains in the press, introducing a second polymer including scattering particles into the cavity, closing the press and carrying out a second pressing, hardening the second polymer to form a scattering layer disposed on the luminescence conversion layer, opening the press, and removing the support film with the layer composite including the luminescence conversion layer and the scattering layer.08-15-2013

Patent applications in class Including integrally formed optical element (e.g., reflective layer, luminescent material, contoured surface, etc.)

Patent applications in all subclasses Including integrally formed optical element (e.g., reflective layer, luminescent material, contoured surface, etc.)