Inventors list

Assignees list

Classification tree browser

Top 100 Inventors

Top 100 Assignees


Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor

Subclass of:

438 - Semiconductor device manufacturing: process

438022000 - MAKING DEVICE OR CIRCUIT EMISSIVE OF NONELECTRICAL SIGNAL

Patent class list (only not empty are listed)

Deeper subclasses:

Class / Patent application numberDescriptionNumber of patent applications / Date published
438027000 Having additional optical element (e.g., optical fiber, etc.) 185
438028000 Plural emissive devices 64
Entries
DocumentTitleDate
20110177632OPTICAL DEVICE AND METHOD OF MANUFACTURING THE SAME - An optical device includes a semiconductor substrate (07-21-2011
20100062552SILICONE RESIN COMPOSITION FOR ENCAPSULATING LUMINESCENT ELEMENT AND PROCESS FOR PRODUCING OPTICAL-SEMICONDUCTOR ELECTRONIC PART WITH THE SAME THROUGH POTTING - The present invention provides a silicone resin composition for encapsulating light-emitting elements with which encapsulation using a potting method can be easily accomplished, and which can be easily molded into a lens shape such as hemisphere, parabola, or the like. The composition can impart high transparency to the resulting encapsulating lens molded using a potting method.03-11-2010
20080261338Method For Manufacturing an Electronics Module Comprising a Component Electrically Connected to a Conductor-Pattern Layer - Method for manufacturing an electronic module, which electronic module includes a component (10-23-2008
20120184056METHOD AND APPARATUS FOR MANUFACTURING WHITE LIGHT-EMITTING DEVICE - Methods and apparatus for manufacturing a semiconductor light-emitting device that emits white light by forming a phosphor layer on an emission surface of the semiconductor light-emitting device at a wafer-level. The method includes: forming a plurality of light-emitting devices on a wafer; thinning the wafer, on which the plurality of light-emitting devices are formed; disposing the thinned wafer on a carrier film; and forming a phosphor layer on an emission surface of the plurality of light-emitting devices on the wafer.07-19-2012
20100075448METHOD OF MAKING A SEMICONDUCTOR CHIP ASSEMBLY WITH A POST/BASE/CAP HEAT SPREADER - A method of making a semiconductor chip assembly includes providing a post and a base, mounting an adhesive on the base including inserting the post into an opening in the adhesive, mounting a conductive layer on the adhesive including aligning the post with an aperture in the conductive layer, then flowing the adhesive into and upward in a gap located in the aperture between the post and the conductive layer, solidifying the adhesive, then providing a conductive trace that includes a pad, a terminal and a selected portion of the conductive layer, providing a cap on the post, mounting a semiconductor device on a heat spreader that includes the post, the base and the cap, electrically connecting the semiconductor device to the conductive trace and thermally connecting the semiconductor device to the heat spreader.03-25-2010
20130137200Method of Manufacturing Sealed Body and Method of Manufacturing Light-Emitting Device - Methods of manufacturing a sealed body and a light-emitting device with high airtightness in which generation of a crack in a substrate and a frit glass in an overlap region where laser light irradiation is started and ended is prevented are provided. A high-reflectivity region having high reflectivity with respect to laser light and a low-reflectivity region having lower reflectivity than the high-reflectivity region are provided in a region which overlaps with the frit glass and is over a substrate facing a substrate on which the frit glass is formed. When scanning with laser light is started from the low-reflectivity region, a crack is less likely to be generated in the frit glass.05-30-2013
20120208306METHOD FOR ENCAPSULATING AN ORGANIC LIGHT EMITTING DIODE - Methods for encapsulating OLED structures disposed on a substrate using a soft/polymer mask technique are provided. The soft/polymer mask technique can efficiently provide a simple and low cost OLED encapsulation method, as compared to convention hard mask patterning techniques. The soft/polymer mask technique can utilize a single polymer mask to complete the entire encapsulation process with low cost and without alignment issues present when using conventional metal masks. Rather than utilizing a soft/polymer mask, the encapsulation layers may be blanked deposited and then laser ablated such that no masks are utilized during the encapsulation process.08-16-2012
20090155937METHOD FOR PACKAGING LED DEVICE - A method for packaging LED device comprises following steps: (06-18-2009
20100041169Method of forming a resin cover lens of LED assembly - A method of forming the resin cover lens of LED assembly uses transparent materials, such as plastics, PP (Polypropylene), PET (Polyethylene teraphthalate), PC (Polycarbonate), PE (Polyethylene) or glass to produce the mold for making lens; and uses liquid transparent resin that can be quickly cured under EB (electron-beam) radiation, such as PU (Polyurethane), epoxy, silicon, acrylic resin or its copolymer et al., or the above resin added with photo initiator and curable under UV radiation; and fills in the mold cavity with the resin; and selects EB or UV to cure the liquid transparent resin inside the cavity to form lens. The new process in the invention is to reduce the curing time for making lens that helps LED assembly achieve high throughput rate and mass production.02-18-2010
20100041170Package-Integrated Thin Film LED - LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features. There is very little absorption of light by the thinned epitaxial layer, there is high thermal conductivity to the package because the LED layers are directly bonded to the package substrate without any support substrate therebetween, and there is little electrical resistance between the package and the LED layers so efficiency (light output vs. power input) is high. The light extraction features of the LED layer further improves efficiency.02-18-2010
20100330714MOLD FOR FORMING A MOLDING MEMBER AND METHOD OF FABRICATING A MOLDER MEMBER USING THE SAME - There are provided a mold for forming a molding member and a method for forming a molding member using the same. The mold includes an upper surface, and a lower surface having an outer peripheral surface and a concave surface surrounded by the outer circumference. Injection and discharge holes extend from the upper surface to the lower surface. Accordingly, after the mold and the package are coupled so that the discharge hole is directed upward, a molding member can be formed on the package by injecting the molding material through the injection hole, whereby it is possible to prevent air bubbles from being captured in the molding member.12-30-2010
20090124032Penetrating hole type LED chip package structure using a ceramic material as a substrate and method for manufacturing the same - An LED chip package structure includes a ceramic substrate, a conductive unit, a hollow ceramic casing, many LED chips, and a package colloid. The ceramic substrate has a main body, many protrusions extended from the main body, many penetrating holes respectively penetrating through the protrusions, and many half through holes formed on a lateral side of the main body and respectively formed between each two protrusions. The conductive unit has many first conductive layers respectively formed on the protrusions, many second conductive layers respectively formed on inner surfaces of the half through holes and a bottom face of the main body, and many third conductive layers respectively filled in the penetrating holes. The hollow ceramic casing is fixed on the main body to form a receiving space. The LED chips is received in the receiving space. The package colloid is filled in the receiving space for covering the LED chips.05-14-2009
20090124031Flip-Chip Packaging Structure For Light Emitting Diode And Method Thereof - A packaging structure and method for a light emitting diode is provided. The present invention uses flip-chip and eutectic bonding technology to attach a LED to a thermal and electrical conducting substrate. The flip-chip packaging structure comprises a thermal and electrical conducting substrate having an insulating layer formed in an appropriate area on the top surface of the substrate and a bonding pad formed on top of the insulating layer; and a LED reversed in a flip-chip style and joined to the substrate by eutectic bonding. A first electrode of the LED is eutectically bonded to an appropriate area on the top surface of the substrate via a eutectic layer, while a second electrode of the LED is electrically connected to the bonding pad.05-14-2009
20130052764METHOD FOR PACKAGING LIGHT EMITTING DIODE - A method of packaging a light emitting diode comprising: providing a flexible substrate with a heat-conducting layer, an insulating layer covering on a surface of the heat-conducting layer and an electrically conductive layer positioned on the insulating layer; etching the conductive layer to form a gap in the conductive layer and expose a part of the insulating layer, the conductive layer being separated by the gap into a first electrode and a second electrode isolated from each other; stamping the flexible substrate with a mold at the position of the gap to form a recess in the flexible substrate; positioning a light emitting element on the conductive layer and electrically connecting the light emitting element to the conductive layer; and forming an encapsulation to cover the light emitting element.02-28-2013
20090305443METHOD OF MAKING LIGHT EMITTING DIODES - A method of making a plurality of light emitting diodes simultaneously includes steps of: a) providing a wafer and a first bonding layer, and adhering the first bonding layer to a bottom side of the wafer; b) cutting the wafer to form a plurality of LED dies on the first bonding layer; c) adhering a second bonding layer on top sides of the plurality of LED dies; d) removing the first bonding layer; e) mounting the second bonding layer with the plurality of LED dies on a base having a plurality of recesses; f) removing the second bonding layer and letting the plurality of LED dies fall into the recesses of the base; g) electrically connecting the LED dies to electric poles in the base; h) encapsulating the LED dies; and i) cutting the base to form the plurality of LEDs.12-10-2009
20130071961LARGE AREA HERMETIC ENCAPSULATION OF AN OPTOELECTRONIC DEVICE USING VACUUM LAMINATION - Apparatus for accurately picking and placing one or more optoelectronic devices for vacuum lamination of materials in a way that minimizes stress to the materials.03-21-2013
20100279443LIGHT EMITTING DIODE AND FABRICATING METHOD THEREOF - A light emitting diode and its fabricating method are disclosed. A light emitting diode epitaxy structure is formed on a substrate, and then the light emitting diode epitaxy structure is etched to form a recess. The recess is then filled with a transparent dielectric material. An adhesive layer is utilized to adhere a conductive substrate and the light emitting diode epitaxy structure. Next, the substrate is removed.11-04-2010
20110014731METHOD FOR SEALING A PHOTONIC DEVICE - Methods for sealing a photonic device are disclosed. The photonic device may, for example, comprise a display device, a lighting device or a photovoltaic device. The device is sealed with a glass frit that is heated with a laser from both sides of the device (through both glass substrate plates), either sequentially or simultaneously. The methods can facilitate wider seal widths, and wider overall frit wall widths for increased device strength.01-20-2011
20120225506HERMETICALLY-SEALED PACKAGES FOR ELECTRONIC COMPONENTS HAVING REDUCED UNUSED AREAS - Hermetically-sealed packages for electronic components, e.g., OLEDs, are provided. The packages have a first glass substrate (09-06-2012
20120225505METHOD OF BONDING A SEMICONDUCTOR DEVICE USING A COMPLIANT BONDING STRUCTURE - A compliant bonding structure is disposed between a semiconductor device and a mount. In some embodiments, the device is a light emitting device. When the semiconductor light emitting device is attached to the mount, for example by providing ultrasonic energy to the semiconductor light emitting device, the compliant bonding structure collapses to partially fill a space between the semiconductor light emitting device and the mount. In some embodiments, the compliant bonding structure is plurality of metal bumps that undergo plastic deformation during bonding. In some embodiments, the compliant bonding structure is a porous metal layer.09-06-2012
20130065331MOUNTING METHOD FOR SEMICONDUCTOR LIGHT EMITTER - The present invention is a method for mounting, on a ceramic substrate (03-14-2013
20120115263CHIP-TYPE LED AND METHOD OF MANUFACTURING THE SAME - An embodiment of the present invention has an insulating substrate in which a first concave hole for mounting an LED chip and a second concave hole for connecting a metallic small-gauge wire are formed, where a metallic sheet that serves as a first wiring pattern is formed at a portion that includes the first concave hole, a metallic sheet that serves as a second wiring pattern is formed at a portion that includes the second concave hole, an LED chip is mounted upon the metallic sheet inside the first concave hole, the LED chip is electrically connected to the metallic sheet inside the second concave hole via a metallic small-gauge wire, and the chip-type LED is sealed with a clear resin.05-10-2012
20120115262LASER ASSISTED TRANSFER WELDING PROCESS - A method of printing transferable components includes pressing a stamp including at least one transferable semiconductor component thereon on a target substrate such that the at least one transferable component and a surface of the target substrate contact opposite surfaces of a conductive eutectic layer. During pressing of the stamp on the target substrate, the at least one transferable component is exposed to electromagnetic radiation that is directed through the transfer stamp to reflow the eutectic layer. The stamp is then separated from the target substrate to delaminate the at least one transferable component from the stamp and print the at least one transferable component onto the surface of the target substrate. Related systems and methods are also discussed.05-10-2012
20090011527PRODUCING A SURFACE-MOUNTABLE RADIATION EMITTING COMPONENT - A radiation-emitting surface-mountable component has a light-emitting diode chip mounted on a leadframe. A molding material encapsulates the leadframe and the light emitting diode chip.01-08-2009
20110027921METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a method for manufacturing a semiconductor light emitting device includes forming a separation groove on a major surface of a substrate. A semiconductor layer including a light emitting layer is formed on the substrate. The separation groove separates the semiconductor layer into a plurality of elements. The method includes forming an insulating film on the major surface of the substrate. The insulating film covers the semiconductor layer and a bottom surface of the separation groove provided on the substrate. The method includes separating the substrate from the semiconductor layer by irradiating the semiconductor layer with laser light from an surface of the substrate opposite to the major surface. An edge portion of irradiation area of the laser light is positioned near an edge portion of the semiconductor layer neighboring the separation groove.02-03-2011
20080280384SOLID-STATE LIGHT EMITTING DISPLAY AND FABRICATION METHOD THEREOF - A solid-state light emitting display and a fabrication method thereof are proposed. The light emitting display includes a metallic board formed with conductive circuits, and a plurality of luminous microcrystals disposed on a surface of the metallic board and electrically connected to the conductive circuits. The metallic board provides the features of lightness and thinness, and flexibility, and the luminous microcrystals are in the form of light emitting components, so as to improve the luminous efficiency of display and attain the effect of environmental protection and energy saving, thereby providing display technology with performance satisfactory for various display requirements.11-13-2008
20090186433Method of making phosphor containing glass plate, method of making light emitting device - A method of making a light emitting device includes mixing a glass powder with a phosphor powder including at least one of a sulfide phosphor, an aluminate phosphor and a silicate phosphor to produce a mixed powder in which the phosphor powder is dispersed in the glass powder, heating and softening the mixed powder to provide an integrated material, and subsequently solidifying the integrated material to provide a phosphor-dispersed glass, and fusion-bonding the phosphor-dispersed glass onto a mounting portion on which a light emitting element is mounted by hot pressing, and simultaneously sealing the light emitting element with the phosphor-dispersed glass on the mounting portion.07-23-2009
20090246897LED chip package structure and method for manufacturing the same - An LED chip package structure includes a substrate unit, a light-emitting unit, and a colloid unit. The substrate unit has a substrate body, and a positive electrode trace and a negative electrode trace is respectively formed on the substrate body. The light-emitting unit has a plurality of LED chips arranged on the substrate body for generating light, wherein each of the LED chips has a positive side and a negative side respectively electrically connected with the positive electrode trace and the negative electrode trace. The colloid unit is covered over the substrate unit and the light-emitting unit for guiding the light from the light-emitting unit to form a series of light-generating areas on the colloid unit.10-01-2009
20110300649PACKAGE FOR A LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME - A method for fabricating a LED includes: providing a metal substrate; etching the metal substrate to form a first terminal, a second terminal, and a gap between the first terminal and the second terminal, wherein the first terminal has at least one first etching concave and the second terminal has at least one second etching concave; placing at least one LED chip in the at least one first etching concave, wherein the at least one LED chip has a first electrode and a second electrode; electrically connecting the first electrode with the first terminal, and electrically connecting the second electrode with the second terminal; and then covering the at least one LED chip with synthetic polymer, wherein the synthetic polymer is filled into the at least one first etching concave, the at least one second etching concave and the gap to connect the first terminal with the second terminal.12-08-2011
20120003764METHOD OF PRODUCING ORGANIC LIGHT-EMITTING DEVICE - Produced is an organic light-emitting device with high reliability without causing any degradation in light emission characteristics by preventing the intrusion of moisture with respect to an organic light-emitting element. Provided is a method of producing an organic light-emitting device including a substrate 01-05-2012
20110287563METHOD OF MAKING A SEMICONDUCTOR CHIP ASSEMBLY WITH A POST/DIELECTRIC/POST HEAT SPREADER - A method of making a semiconductor chip assembly includes providing first and second posts, first and second adhesives, first and second conductive layers and a dielectric base, wherein the first post extends from the dielectric base in a first vertical direction into a first opening in the first adhesive and is aligned with a first aperture in the first conductive layer, the second post extends from the dielectric base in a second vertical direction into a second opening in the second adhesive and is aligned with a second aperture in the second conductive layer and the dielectric base is sandwiched between and extends laterally from the posts, then flowing the first adhesive in the first vertical direction and the second adhesive in the second vertical direction, solidifying the adhesives, then providing a conductive trace that includes a pad, a terminal and selected portions of the conductive layers, wherein the pad extends beyond the dielectric base in the first vertical direction and the terminal extends beyond the dielectric base in the second vertical direction, providing a heat spreader that includes the posts and the dielectric base, then mounting a semiconductor device on the first post, electrically connecting the semiconductor device to the conductive trace and thermally connecting the semiconductor device to the heat spreader.11-24-2011
20110294241Method of using white resin in an electronic device - The coating agent of the invention is a coating agent to be used between conductor members, comprising a thermosetting resin, a white pigment, a curing agent and a curing catalyst, the coating agent to be used between conductor members having a white pigment content of 10-85 vol % based on the total solid volume of the coating agent, and a whiteness of at least 75 when the cured product of the coating agent has been allowed to stand at 200° C. for 24 hours.12-01-2011
20110217799METHOD OF SEPARATING SEMICONDUCTOR DIES - A method for the separation of multiple dies during semiconductor fabrication is described. On an upper surface of a semiconductor wafer containing multiple dies, metal layers are deposited everywhere except where a block of stop electroplating material exists. The stop electroplating material is obliterated, and a barrier layer is formed above the entire remaining structure. A sacrificial metal element is added above the barrier layer, and then the substrate is removed. After the semiconductor material between the individual dies is eradicated, any desired bonding pads and patterned circuitry are added to the semiconductor surface opposite the sacrificial metal element, a passivation layer is added to this surface, and then the sacrificial metal element is removed. Tape is added to the now exposed barrier layer, the passivation layer is removed, the resulting structure is flipped over, and the tape is expanded to separate the individual dies.09-08-2011
20090098672Method for making a heat dissipating device for LED installation - A method for making a heat dissipating device for LED installation, comprising the steps of a) preparing a thermal member having a metal surface, b) covering at least a part of the metal surface of the thermal member with a electrically insulative thermal conductivity layer, and c) providing multiple conducting layers at the electrically insulative thermal conductive layer for the installation of LED (light emitting diode) chips.04-16-2009
20120107973Method for Producing Lamps - A method for producing luminous means proposes providing a carrier serving as a heat sink, said carrier comprising a planar chip mounting region. The planar chip mounting region is structured for the purpose of producing a first partial region and at least one second partial region. In this case, the first partial region has a solder-repellent property after structuring. Afterward, a solder is applied to the planar chip mounting region, such that said solder wets the at least one second partial region. At least one optoelectronic body is fixed into the at least one second partial region with the solder at the carrier. Finally, contact-connections are formed for the purpose of feeding electrical energy to the optoelectronic luminous body.05-03-2012
20110151603LIGHT EMITTING APPARATUS AND METHOD OF MANUFACTURING THE SAME - A light-emitting apparatus of the present invention includes: a first electrode formed on an insulating surface; a first insulating layer covering an end portion of the first electrode and having a tapered edge; a second insulating layer formed on the first electrode and the first insulating layer and formed of one kind or a plurality of kinds selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride; an organic compound layer formed on the second insulating layer; and a second electrode formed on the organic compound layer.06-23-2011
20120190140Light-Emitting Diode Arrangement and Method for Producing the Same - A light-emitting diode arrangement comprising a plurality of semiconductor chips which are provided for emitting electromagnetic radiation from their front side and which are fixed by their rear side—opposite the front side—on a first main face of a common carrier body, wherein the semiconductor chips consist of a respective substrateless semiconductor layer stack and are fixed to the common carrier body without an auxiliary carrier, and to a method for producing such a light-emitting diode arrangement.07-26-2012
20110151602METHOD OF MANUFACTURING TRANSFERABLE ELEMENTS INCORPORATING RADIATION ENABLED LIFT OFF FOR ALLOWING TRANSFER FROM HOST SUBSTRATE - Semiconductor material is formed on a host substrate of a material exhibiting optical transparency with an intervening radiation lift off layer. A transfer device, intermediate substrate or target substrate is brought into adhesive contact with the semiconductor material and the radiation lift off layer is irradiated to weaken it, allowing the semiconductor material to be transferred off the host substrate. Electronic devices may be formed in the semiconductor layer while it is attached to the host substrate or the intermediate substrate.06-23-2011
20090087931METHOD OF MANUFACTURING LIGHT EMITTING DIODE PACKAGE - Provided is a method of manufacturing an LED package, the method including preparing a mold die which includes an upper surface and a lower surface having an outer circumferential surface and a concave surface surrounded by the outer circumferential surface, the mold die having an outlet extending from the upper surface to the lower surface; preparing a base having a light emitting section formed therein; forming an inlet formed in a predetermined region of the base excluding the region where the light emitting section is formed; positioning the mold die on the light emitting section; forming a mold member by injecting a molding compound into the inlet of the base; and removing the mold die.04-02-2009
20100087020SEMICONDUCTOR CHIP ASSEMBLY WITH COPPER/ALUMINUM POST/BASE HEAT SPREADER - A method of making a semiconductor chip assembly includes providing a post and a base that include a copper surface layer and an aluminum core, mounting an adhesive on the base including inserting the post into an opening in the adhesive, mounting a conductive layer on the adhesive including aligning the post with an aperture in the conductive layer, then flowing the adhesive into and upward in a gap located in the aperture between the post and the conductive layer, solidifying the adhesive, then providing a conductive trace that includes a pad, a terminal and a selected portion of the conductive layer, mounting a semiconductor device on a heat spreader that includes the post and the base, electrically connecting the semiconductor device to the conductive trace and thermally connecting the semiconductor device to the heat spreader.04-08-2010
20120295373METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT - To provide a method of manufacturing a nitride semiconductor light emitting element, which has a small number of steps and thus, can improve productivity, the method of manufacturing a nitride semiconductor light emitting element including a nitride semiconductor light emitting element structure having an n-type nitride semiconductor layer and a p-side nitride semiconductor layer which are laminated on a substrate, an n-side pad electrode connecting surface and a p-side pad electrode connecting surface which are formed on the same plane of the substrate; a n-side pad electrode on the n-side pad electrode connecting surface; and a p-side pad electrode on the p-side pad electrode connecting surface, and in the manufacturing method, a pad electrode layer forming step, a resist pattern forming step, a pad electrode layer etching step, a protective layer forming step and a resist pattern removing step are sequentially performed.11-22-2012
20110201140LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - Disclosed are a light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes a conductive support member, a light emitting structure layer including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on the conductive support member, and an electrode on the light emitting structure layer. The conductive support member has a curved lateral surface recessed inward.08-18-2011
20120295374LIGHT EMITTING DEVICE, PACKAGE, LIGHT EMITTING DEVICE MANUFACTURING METHOD, PACKAGE MANUFACTURING METHOD AND PACKAGE MANUFACTURING DIE - A light emitting device includes a resin molded body having a circular or an oval recessed section at the center suppresses generation of cracks. The device is provided with a light emitting element, a first resin molded body having a plurality of outer surfaces, and a recessed section at the center. First and second leads are electrically connected to the light emitting element, and a second resin molded body is applied in the recessed section. The light emitting element is placed on the first lead, and the surface of the second resin molded resin forms a light emitting surface. A gate notch is formed on an extended line of a normal line on one point on a circular cross-section of the recessed section in the normal line direction.11-22-2012
20090275153METHOD OF PRODUCTION OF SEMICONDUCTOR LIGHT EMISSION DEVICE AND METHOD OF PRODUCTION OF LIGHT EMISSION APPARATUS - A method of production of semiconductor light emission devices for forming stripes of two multilayers having different emission wavelengths on a substrate, including the steps of: depositing a first multilayer including an active layer on the substrate; selectively etching the first multilayer to form a plurality of adjoining pairs of stripes of the first multilayer; depositing a second multilayer including an active layer on the substrate and the stripes of the first multilayer; selectively etching the second multilayer to form a plurality of adjoining pairs of stripes of the second multilayer on the substrate between the stripes of the first multilayer; and dividing the substrate between adjoining pairs of stripes of the first multilayer and between adjoining pairs of stripes of the second multilayer to divide it into semiconductor light emission devices provided with a stripe of the first multilayer and the second multilayer having different emission wavelengths.11-05-2009
20090291516Peeling Method and Method of Manufacturing Semiconductor Device - There is provided a peeling method capable of preventing a damage to a layer to be peeled. Thus, not only a layer to be peeled having a small area but also a layer to be peeled having a large area can be peeled over the entire surface at a high yield. Processing for partially reducing contact property between a first material layer (11-26-2009
20100221853METHOD FOR GENERATING AN ELECTRODE LAYER PATTERN IN AN ORGANIC FUNCTIONAL DEVICE - A method for generating an electrode layer pattern in an organic functional device (09-02-2010
20090170226Package for a Semiconductor Light Emitting Device - A semiconductor light emitting device package includes a substrate with a core and a copper layer overlying the core. The light emitting device is connected to the substrate directly or indirectly through a wiring substrate. The core of the substrate may be, for example, ceramic, Al07-02-2009
20090170227MASK AND CONTAINER AND MANUFACTURING - The present invention provides a large mask with a high mask accuracy for conducting selective deposition on a substrate with a large surface area. In accordance with the present invention, the mask body is fixed in a fixing position disposed on a line passing through a thermal expansion center in the width of the mask frame. Further, in accordance with the present invention, the substrate and mask body are fixed and deposition is carried out by moving the deposition source in the X direction or Y direction. A method comprising moving the deposition source in the X direction or Y direction is suitable for deposition on large substrates.07-02-2009
20080206910Luminescent sheet covering for LEDs - A lighting apparatus comprising at least one light emitting diode is disposed on an interconnect board to emit ultraviolet or blue radiation. A polymeric layer including a luminophor is disposed about the lighting apparatus to convert at least a portion of the radiation emitted from the LED into visible light. The polymeric layer is shrinkable to conform to a shape enclosing the light emitting diode.08-28-2008
20080248602LIGHT EMITTING DEVICE PROCESSES - Light-emitting devices, and related components, processes, systems and methods are disclosed.10-09-2008
20090053839HIGH POWER LED HOUSING AND FABRICATION METHOD THEREOF - An LED housing, in which a heat conducting part has a chip mounting area, a heat connecting area opposed to the chip mounting area and a neck between them. Fixing parts have first ends engaged with the neck. An electrical connecting part has a wire connecting area placed adjacent to the chip mounting area and an external power connecting area connected to the wire connecting area. A housing body of molding material integrally holds the heat conducting part, the fixing parts and the electrical connecting part while isolating the electrical connecting part from the heat conducting part. The LED housing fixes the neck of the heat conducting part at both sides, thereby stably coupling the heat conducting part to the housing body. The fixing parts can spread heat from the heat conducting part to lateral regions of the LED housing, thereby more efficiently spreading heat.02-26-2009
20100144072ORGANIC LIGHT EMITTING DISPLAY AND METHOD OF FABRICATING THE SAME - An organic light emitting display (OLED) and a method of fabricating the same are provided. The method includes forming the OLED having upper and lower substrates that emit different colors from each other, and coupling the upper and lower substrates together.06-10-2010
20110207251SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - It is provided a contacting method when a plurality of films to be peeled are laminating. Reduction of total layout area, miniaturization of a module, weight reduction, thinning, narrowing a frame of a display device, or the like can be realized by sequentially laminating a plurality of films to be peeled which are once separately formed over a plastic film or the like. Moreover, reliable contact having high degree of freedom is realized by forming each layer having a connection face of a conductive material and by patterning with the use of a photomask having the same pattern.08-25-2011
20090162955LED DEVICE WITH IMPROVED LIFE PERFORMANCE - A light-emitting diode with an improved service life is provided. The diode is formed from a transparent outer shell that contains a heat-resistant encapsulant at least partially surrounding a light-emitting diode clip. The first encapsulant is compressed between the outer shell and a second encapsulant when it is sealed into the outer shell by the second encapsulant.06-25-2009
20090186434Led chip package structre with a plurality of thick guiding and a method for manufactruing the same - An LED chip package structure with thick guiding pin includes a plurality of conductive pins separated from each other, an insulative casing, a plurality of LED chips, and a packaging colloid. The insulative casing covers a bottom side of each conductive pin to form an injection concave groove for exposing a top surface of each conductive pin. Two lateral sides of each conductive pin are extended outward from the insulative casing. The LED chips are arranged in the injection concave groove, and each LED chip has a positive electrode side and a negative electrode side respectively and electrically connected with different conductive pins. In addition, the packaging colloid is filled into the injection concave groove for covering the LED chips.07-23-2009
20090137072LIGHT EMITTING DEVICE METHODS - Light-emitting device methods are disclosed.05-28-2009
20090017567Method for manufacturing semiconductor device - An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated.01-15-2009
20090068774LED Bonding Structures and Methods of Fabricating LED Bonding Structures - A method is disclosed for fabricating an LED The method includes providing an LED chip having an epitaxial region comprising at least a p-type layer and an n-type layer, an ohmic contact formed on at least one of the p-type layer or the n-type layer, and a bond pad formed on the ohmic contact. The bond pad has a total volume less than about 3×1003-12-2009
20090053838METHOD FOR MANUFACTURING SEMICONDUCTOR LASER DEVICE AND METHOD FOR INSPECTING SEMICONDUCTOR LASER BAR - A first conductivity type cladding layer, an active layer, a second conductivity type first cladding layer, and a second conductivity type second cladding layer are laminated in this order on a semiconductor substrate by crystal growth. The second conductivity type second cladding layer is processed into a plurality of stripe-shaped ridge structure portions, and a laser bar is formed by cleavage in a direction orthogonal to a longitudinal direction of the ridge structure portions. A plurality of columns of the ridge structure portions that are aligned in the longitudinal direction of the ridge structure portions at predetermined intervals are arranged. The arrangement is such that each of the columns is displaced from the adjacent column in the longitudinal direction of the ridge structure portions so that an end portion of each of the ridge structure portions and an end portion of the adjacent ridge structure portion overlap each other in the longitudinal direction of the ridge structure portions. A region where the end portion of each of the ridge structure portions and the end portion of the adjacent ridge structure portion overlap each other is cleaved. According to this method, it is possible to provide a method for manufacturing a semiconductor laser device and a method for inspecting a semiconductor laser bar in the manufacturing process, capable of determining for each chip whether or not a deviation of the resonator length is within the tolerance in a simple manner.02-26-2009
20080318353MICROELECTRONIC IMAGERS WITH OPTICAL DEVICES HAVING INTEGRAL REFERENCE FEATURES AND METHODS FOR MANUFACTURING SUCH MICROELECTRONIC IMAGERS - Microelectronic imager assemblies with optical devices having integral reference features and methods for assembling such microelectronic imagers is disclosed herein. In one embodiment, the imager assembly can include a workpiece with a substrate having a front side, a back side, and a plurality of imaging dies on and/or in the substrate. The imaging dies include image sensors, integrated circuitry operatively coupled to the image sensors, and external contacts electrically coupled to the integrated circuitry. The assembly also includes optics supports on the workpiece. The optics supports have openings aligned with corresponding image sensors and first interface features at reference locations relative to corresponding image sensors. The assembly further includes optical devices having optics elements and second interface features seated with corresponding first interface features to position the optics elements at a desired location relative to corresponding image sensors.12-25-2008
20090258449FABRICATING METHOD OF LIGHT EMITTING DIODE PACKAGE - A method of fabricating a light emitting diode package structure is provided. First, a first circuit substrate having a first surface and a corresponding second surface and a second circuit substrate having a third surface and a corresponding fourth surface are provided. The second surface and the third surface respectively have a plurality of electrodes. Then, a plurality of N-type semiconductor materials and a plurality of P-type semiconductor materials alternatively arranged on the electrodes are formed. Then, the first circuit substrate and the second circuit substrate are assembled. The two type semiconductor materials are located between the electrodes of the first circuit substrate and the second circuit substrate. The two type semiconductor materials are electrically connected to the first circuit substrate and the second circuit substrate through the electrodes. Finally, an LED chip is arranged on the first surface and electrically connected to the first circuit substrate.10-15-2009
20100151601APPARATUS FOR HARDENING SEAL OF ELECTROPHORETIC DISPLAY DEVICE AND METHOD OF FABRICATING ELECTROPHORETIC DISPLAY DEVICE USING THEREOF - In an apparatus for curing a seal in an electrophoretic display device according to the present invention, a support having magnetism may be provided on a curing table to be loaded with an electrophoretic display device in order to support the electrophoretic display device while at the same time generating a magnetic force in a direction opposite to a stress caused by a seal material in the electrophoretic display device, thereby preventing the electrophoretic display device from being bent when the seal material is cured.06-17-2010
20100015738Light emitting elements and methods of fabricating the same - Methods of fabricating light emitting elements and light emitting devices, light emitting elements and light emitting devices are provided. In some embodiments, the methods of fabricating a light emitting element includes forming a buffer layer on at least one first substrate, bonding the at least one first substrate on a second substrate, wherein the buffer layer is placed between each of the first substrate and the second substrate and the second substrate is larger than the first substrate, exposing the buffer layer, and sequentially forming a first conductive layer, a light emitting layer, and a second conductive layer on the exposed buffer layer.01-21-2010
20100167437PEELING METHOD AND METHOD FOR MANUFACTURING DISPLAY DEVICE USING THE PEELING METHOD - The present invention provides a simplifying method for a peeling process as well as peeling and transcribing to a large-size substrate uniformly. A feature of the present invention is to peel a first adhesive and to cure a second adhesive at the same time in a peeling process, thereby to simplify a manufacturing process. In addition, the present invention is to devise the timing of transcribing a peel-off layer in which up to an electrode of a semiconductor are formed to a predetermined substrate. In particular, a feature is that peeling is performed by using a pressure difference in the case that peeling is performed with a state in which plural semiconductor elements are formed on a large-size substrate.07-01-2010
20100261299PACKAGING PROCESS OF LIGHT EMITTING DIODE - A packaging process of a light emitting diode (LED) is provided. First, an LED chip is bonded with a carrier to electrically connect to each other. After that, the carrier is heated to raise the temperature thereof. Next, an encapsulant is formed on the heated carrier by a dispensing process to encapsulate the LED chip, wherein the viscosity of the encapsulant before contacting the carrier is lower than that of the encapsulant after contacting the carrier. Thereafter, the encapsulant is cured.10-14-2010
20100227421METHOD OF BONDING A SEMICONDUCTOR DEVICE USING A COMPLIANT BONDING STRUCTURE - A compliant bonding structure is disposed between a semiconductor device and a mount. In some embodiments, the device is a light emitting device. When the semiconductor light emitting device is attached to the mount, for example by providing ultrasonic energy to the semiconductor light emitting device, the compliant bonding structure collapses to partially fill a space between the semiconductor light emitting device and the mount. In some embodiments, the compliant bonding structure is plurality of metal bumps that undergo plastic deformation during bonding. In some embodiments, the compliant bonding structure is a porous metal layer.09-09-2010
20100227423LED BACKLIGHT UNIT WITHOUT PRINTED CIRCUIT BOARD AND METHOD OF MANUFACTURING THE SAME - Disclosed herein is a Light Emitting Diode (LED) backlight unit without a Printed Circuit board (PCB). The LED backlight unit includes a chassis, insulating resin layer, and one or more light source modules. The insulating resin layer is formed on the chassis. The circuit patterns are formed on the insulating resin layer. The light source modules are mounted on the insulating resin layer and are electrically connected to the circuit patterns. The insulating resin layer has a thickness of 200 μm or less, and is formed by laminating solid film insulating resin on the chassis or by applying liquid insulating resin to the chassis using a molding method employing spin coating or blade coating. Furthermore, the circuit patterns are formed by filling the engraved circuit patterns of the insulating resin layer with metal material.09-09-2010
20100184241METHOD FOR MANUFACTURING THIN TYPE LIGHT EMITTING DIODE ASSEMBLY - A method is applied to manufacture a thin type light emitting diode (LED) assembly, and comprises the steps of: pressing a light-transmissible conductive film onto a carrier; etching an etched circuit on the light-transmissible conductive film to form an etched light-transmissible conductive film; bonding a LED chip on the etched light-transmissible conductive film to make the LED chip electrically connected with the etched circuit; covering the LED chip and the etched light-transmissible conductive film with a light-transmissible encapsulation layer to encapsulate the LED chip therein; and cutting the carrier to make the carrier be removed from the etched light-transmissible conductive film, so as to manufacture the thin type LED assembly.07-22-2010
20100227424LIGHT EMITTING DIODE PACKAGE AND MANUFACTURING METHOD THEREOF - The present invention relates to a light emitting diode package and a manufacturing method thereof.09-09-2010
20100227422METHOD FOR MANUFACTURING ORGANIC ELECTROLUMINESCENCE DEVICE - The present invention is intended to provide a method for manufacturing an organic EL device, which method can form a film having high barrier properties to water vapor or oxygen, while suppressing damage to an organic EL element, during formation of the film including inorganic layers for sealing the organic EL element. When an organic EL element (09-09-2010
20110111537HIGH THERMAL CONDUCTIVITY SUBSTRATE FOR A SEMICONDUCTOR DEVICE - A method and apparatus for packaging semiconductor dies for increased thermal conductivity and simpler fabrication when compared to conventional semiconductor packaging techniques are provided. The packaging techniques described herein may be suitable for various semiconductor devices, such as light-emitting diodes (LEDs), central processing units (CPUs), graphics processing units (GPUs), microcontroller units (MCUs), and digital signal processors (DSPs). For some embodiments, the package includes a ceramic substrate having an upper cavity with one or more semiconductor dies disposed therein and having a lower cavity with one or more metal layers deposited therein to dissipate heat away from the semiconductor dies. For other embodiments, the package includes a ceramic substrate having an upper cavity with one or more semiconductor dies disposed therein and having a lower surface with one or more metal layers deposited thereon for efficient heat dissipation.05-12-2011
20100210045OPTO-ELECTRONIC DEVICE PACKAGE WITH A SEMICONDUCTOR-BASED SUB-MOUNT HAVING SMD METAL CONTACTS - Non-planar via designs for sub-mounts on which to mount a LED or other optoelectronic device include a continuous layer of metal to conduct the current from the front-side (e.g., LED side) to the backside (e.g., SMD side) through the via and to provide a sufficiently stable and reliable under bump metallization for SMD soldering. Each UBM can be structured so that it does not fully cover the sidewall surfaces of the via that forms the front-to-backside interconnect. In some implementations, each via structure for the feedthrough metallization extends to a respective side-edge of the sub-mount.08-19-2010
20120129281RESIN DISPENSING APPARATUS FOR LIGHT EMITTING DEVICE PACKAGE AND METHOD OF MANUFACTURING LIGHT EMITTING DEVICE PACKAGE USING THE SAME - There is provided a resin dispensing apparatus for a light emitting device package and a method of manufacturing a light emitting device package using the same. The resin dispensing apparatus includes a resin dispensing part including a resin storage portion filled with a resin therein and a resin discharge portion combined with the resin storage portion and discharging the resin therefrom; a supporting part having a light emitting device package disposed on an upper surface thereof and electrically connected to the light emitting device package; a voltage applying part having both terminals respectively connected to the resin dispensing part and the supporting part to apply a voltage thereto; and a sensing part electrically connected to the resin dispensing part and the supporting part individually and sensing a contact between the resin dispensing part and the light emitting device package with an electrical signal.05-24-2012
20100136725THERMAL MANAGEMENT FOR LED - A method and system for removing heat from an LED facilitates the fabrication of LEDs having enhanced brightness. A thermally conductive interposer can be attached to the top of the LED. Heat can flow through the top of the LED and into the interposer. The interposer can carry the heat away from the LED. Light can exit the LED though an at least partially transparent substrate of the LED. By removing heat from an LED, the use of more current through the LED is facilitated, thus resulting in a brighter LED.06-03-2010
20100136724METHOD FOR FABRICATING A NANOSTRUCTURED SUBSTRATE FOR OLED AND METHOD FOR FABRICATING AN OLED - Method for fabricating a substrate comprising a nanostructured surface for an organic light emitting diode OLED, in which a layer of an organic resin or of a mineral material having a first nanostructuration is prepared by nano-imprint; the organic resin or mineral material is heated to a temperature equal to or higher than its glass transition temperature Tg or its melting point, and the organic resin or the mineral material is maintained at this temperature for a time t06-03-2010
20110129951PROCESS FOR MANUFACTURING SEALED ORGANIC ELECTROLUMINESCENCE DEVICES - A process for manufacturing sealed organic EL devices includes a step of forming an organic EL layer on a region of an anode-mounted substrate having a substrate and an anode, the region including at least a bonding region in which a sealing member will be bonded and a region which is found inward the bonding region; a step of removing a portion of the organic EL layer which is found at least on the bonding region by applying plasma by a remote plasma method to expose the bonding region; a step of forming a cathode on the organic EL layer to complete an organic EL device; and a step of bonding a sealing member to the exposed bonding region.06-02-2011
20110177633METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING DEVICE - A method for manufacturing a resin-embedded semiconductor light-emitting device that is capable of preventing a semiconductor film from being damaged when a growth substrate is delaminated using a laser lift-off method, and that is capable of preventing foreign matter from adhering to the semiconductor film when a resin material is applied. A laser exposure step to delaminate the growth substrate from the semiconductor film comprises a first laser exposure step for performing laser exposure at an energy density at which the resin is broken down but the semiconductor film is not broken down, in a range including a portion adjacent to at least one section of the semiconductor film divided by dividing grooves and at least one section of resin, and a second exposure step for performing laser exposure at an energy density at which the semiconductor film can be broken down in a range including at least one section.07-21-2011
20110111536Method of mounting a LED module to a heat sink - A method of mounting a light emitting diode (LED) module (05-12-2011
20090061549PROCESS FOR PRODUCING OPTICAL SEMICONDUCTOR DEVICE - The present invention relates to a process for producing an optical semiconductor device, the process including: disposing a sheet for optical-semiconductor-element encapsulation including a resin sheet A and a plurality of resin layers B discontinuously embedded in the resin sheet A and a plurality of optical semiconductor elements mounted on a substrate in such a way that each of the plurality of optical semiconductor elements faces either one of the plurality of resin layers B; and followed by embedding each of the plurality of optical semiconductor elements in either one of the plurality of resin layers B. According to the process of the invention, optical semiconductor elements can be embedded at once. As a result, an optical semiconductor device which is excellent in LED element protection and durability can be easily obtained. Consequently, the optical semiconductor device obtained can have a prolonged life.03-05-2009
20110244607ORGANIC LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed is an organic light emitting device which includes a substrate; a encapsulation substrate, an organic light emitting unit interposed between the substrate and the encapsulation substrate. A water vapor absorption material-containing transparent sealant layer covers the organic light emitting unit. The sealant layer includes a transparent sealant having a water vapor transmission rate (WVTR) of about 20 g/m10-06-2011
20110244606CHIP-TYPE LED AND METHOD FOR MANUFACTURING THE SAME - In a chip-type LED according to an embodiment of the present invention, a first recess hole for mounting an LED chip and a second recess hole for connecting a fine metal wire are formed in an insulating substrate, a metal sheet serving as a first wiring pattern is formed at a portion that includes the first recess hole, a metal sheet serving as a second wiring pattern is formed at a portion that includes the second recess hole, an LED chip is mounted on the metal sheet within the first recess hole, the LED chip is electrically connected to the metal sheet within the second recess hole via a fine metal wire, the LED chip including the first recess hole and the fine metal wire including the second recess hole are encapsulated in a first transparent resin that contains a fluorescent material, a surface of the insulating substrate including the first transparent resin is encapsulated in a second transparent resin.10-06-2011
20120244651METHOD FOR MANUFACTURING LIGHT EMITTING DIODE - A method for manufacturing light emitting diodes includes steps: providing a substrate having an upper conductive layer and a lower conductive layer formed on a top face and bottom face thereof; dividing each of the upper conductive layer and the lower conductive layer into first areas and second areas; defining cavities in the substrate through the first areas of the upper conductive layer to expose the lower conductive layer; forming conductive posts within the substrate; forming an overlaying layer to connect the first areas of the upper and lower conductive layers; mounting chips on the overlaying layer within the cavities and electrically connecting each chip with an adjacent first area and post; forming an encapsulant on the substrate to cover the chips; and cutting the substrate into individual packages.09-27-2012
20100055812METHOD OF MAKING A SEMICONDUCTOR CHIP ASSEMBLY WITH A POST/BASE HEAT SPREADER AND A CONDUCTIVE TRACE - A method of making a semiconductor chip assembly includes providing a post and a base, mounting an adhesive on the base including inserting the post into an opening in the adhesive, mounting a conductive layer on the adhesive including aligning the post with an aperture in the conductive layer, then flowing the adhesive into and upward in a gap located in the aperture between the post and the conductive layer, solidifying the adhesive, then providing a conductive trace that includes a pad, a terminal and a selected portion of the conductive layer, mounting a semiconductor device on a heat spreader that includes the post and the base, electrically connecting the semiconductor device to the conductive trace and thermally connecting the semiconductor device to the heat spreader.03-04-2010
20100055811METHOD OF MAKING A SEMICONDUCTOR CHIP ASSEMBLY WITH A POST/BASE HEAT SPREADER AND A SUBSTRATE - A method of making a semiconductor chip assembly includes providing a post and a base, mounting an adhesive on the base including inserting the post through an opening in the adhesive, mounting a substrate on the adhesive including inserting the post into an aperture in the substrate to form a gap in the aperture between the post and the substrate, then flowing the adhesive into and upward in the gap, solidifying the adhesive, then mounting a semiconductor device on a heat spreader that includes the post and the base, electrically connecting the semiconductor device to the substrate and thermally connecting the semiconductor device to the heat spreader.03-04-2010
20110081735PROCESS FOR FORMING ENCAPSULATED ELECTRONIC DEVICES - There is provided herein a process for forming an encapsulated electronic device. The device has active areas and sealing areas on a substrate. The process includes providing the substrate; forming a discontinuous pattern of a material having a first surface energy on at least a portion of the sealing areas; forming multiple active layers, where at least one active layer is formed by liquid deposition from a liquid medium having a surface energy greater than the first surface energy; providing an encapsulation assembly; and bonding the encapsulation assembly to the substrate in the sealing areas. Also provided are devices formed by the disclosed processes.04-07-2011
20110177631METHOD OF FORMING A COMPOSITE SUBSTRATE AND GROWING A III-V LIGHT EMITTING DEVICE OVER THE COMPOSITE SUBSTRATE - A method according to embodiments of the invention includes providing a substrate comprising a host and a seed layer bonded to the host. The seed layer comprises a plurality of regions. A semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region is grown on the substrate. A top surface of a semiconductor layer grown on the seed layer has a lateral extent greater than each of the plurality of seed layer regions.07-21-2011
20120276667PACKAGING METHOD OF LIGHT EMITTING DEVICE - A packaging method includes the following steps. A cover substrate is provided. A blocking dam having a first height is formed in the peripheral region of the cover substrate. The blocking dam has a second height after being hardened. A sealant surrounding the blocking dam and having a third height is formed. An encapsulation glue is filled in the active region of the cover substrate, and blocked by the blocking dam. A device substrate is provided, and a compression process is performed on the device substrate and the cover substrate. After the compression process, a buffer space is formed between the blocking dam and the sealant and between the cover substrate and the device substrate to accommodate the encapsulation glue spilling out of the active region of the cover substrate. The sealant is hardened, so that the cover substrate and the device substrate are bonded together through the sealant.11-01-2012
20080268559Mold for Forming a Molding Member and Method of Fabricating a Molding Member Using the Same - There are provided a mold for forming a molding member and a method for forming a molding member using the same. The mold includes an upper surface, and a lower surface having an outer peripheral surface and a concave surface surrounded by the outer circumference. Injection and discharge holes extend from the upper surface to the lower surface. Accordingly, after the mold and the package are coupled so that the discharge hole is directed upward, a molding member can be formed on the package by injecting the molding material through the injection hole, whereby it is possible to prevent air bubbles from being captured in the molding member.10-30-2008
20080213928METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - A method for manufacturing a semiconductor light emitting device can result in a device that includes a housing having a cavity, a light emitting element on a bottom face of the cavity, and a wavelength conversion layer provided within the cavity. The wavelength conversion layer can include particles of a wavelength conversion material. The method includes forming the wavelength conversion layer within the cavity, which can include applying and hardening a first material to form a first wavelength conversion layer on the light emitting element, and applying and hardening a second material to substantially fill the remainder of the entire cavity, thereby forming a second wavelength conversion layer. The semiconductor light emitting device manufactured by the inventive method can achieve uniform light emitting characteristics without substantially any uneven color and can include high heat dissipation efficiency.09-04-2008
20080254556Semiconductor Light Emitting Device and Method of Manufacture - A light-emitting diode (“LED”) device has an LED chip attached to a substrate. The terminals of the LED chip are electrically coupled to leads of the LED device. Elastomeric encapsulant within a receptacle of the LED device surrounds the LED chip. A second encapsulant is disposed within an aperture of the receptacle on the elastomeric encapsulant.10-16-2008
20110053297SUBMOUNTS FOR SEMICONDUCTOR LIGHT EMITTING DEVICES AND METHODS OF FORMING PACKAGED LIGHT EMITTING DEVICES INCLUDING DISPENSED ENCAPSULANTS - A submount for mounting an LED chip includes a substrate, a die attach pad configured to receive an LED chip on an upper surface of the substrate, a first meniscus control feature on the substrate surrounding the die attach pad and defining a first encapsulant region of the upper surface of the substrate, and a second meniscus control feature on the substrate surrounding the first encapsulant region and defining a second encapsulant region of the upper surface of the substrate. The first and second meniscus control features may be substantially coplanar with the die attach pad. A packaged LED includes a submount as described above and further includes an LED chip on the die attach pad, a first encapsulant on the substrate within the first encapsulant region, and a second encapsulant on the substrate within the second encapsulant region and covering the first encapsulant. Method embodiments are also disclosed.03-03-2011
20100210048METHOD OF MOUNTING LED CHIP - A method of mounting an LED chip, which is intended to suppress void-generation inside an eutectic bonding without use of flux. This method includes a step of eutectically bonding a first metal layer (e.g., AuSn layer) on a rear surface of the LED chip, with a metal ground layer on a dielectric substrate (mounting member). This method includes a step of providing a second metal layer having the same metal component as the first metal layer, to the top surface of the metal ground layer on a dielectric substrate; and subsequently connecting the LED chip and the dielectric substrate by way of eutectically bond while the dielectric substrate is heated at its bottom surface remote from the metal ground layer to melt the second metal layer by heat source (heater or the like).08-19-2010
20110136273REFLECTIVE CONTACT FOR A SEMICONDUCTOR LIGHT EMITTING DEVICE - A light emitting device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. A contact is formed on the semiconductor structure, the contact comprising a reflective metal in direct contact with the semiconductor structure and an additional metal or semi-metal disposed within the reflective metal. In some embodiments, the additional metal or semi-metal is a material with higher electronegativity than the reflective metal. The presence of the high electronegativity material in the contact may increase the overall electronegativity of the contact, which may reduce the forward voltage of the device. In some embodiments, an oxygen-gathering material is included in the contact.06-09-2011
20090176323PROCESS FOR PRODUCING LIGHT-EMITTING SEMICONDUCTOR DEVICE - A process for producing a light-emitting semiconductor device includes: (i) mixing at least one low-molecular silane or at least one silanol with an alcohol solution containing an alkoxysiloxane to prepare a mixture solution, the amount of the silane or silanol being from 10% by weight to 50% by weight based on the dry weight of an encapsulating material to be formed; (ii) applying the mixture solution to a light-emitting element; (iii) vaporizing the alcohol solvent in the mixture solution applied and drying the residual mixture to thereby form the encapsulating material; and (iv) curing the encapsulating material.07-09-2009
20090197360LIGHT EMITTING DIODE PACKAGE AND FABRICATION METHOD THEREOF - An LED package and a fabrication method therefor. The LED package includes first and second lead frames made of heat and electric conductors, each of the lead frames comprising a planar base and extensions extending in opposed directions and upward directions from the base. The package also includes a package body made of a resin and configured to surround the extensions of the first and second lead frames to fix the first and second lead frames while exposing underside surfaces of the first and second lead frames. The LED package further includes a light emitting diode chip disposed on an upper surface of the base of the first lead frame and electrically connected to the bases of the first and second lead frames, and a transparent encapsulant for encapsulating the light emitting diode chip.08-06-2009
20110189800LED PACKAGING METHOD - A light emitting diode (LED) packaging method includes the steps of preparing a circuit board (08-04-2011
20110189801METHOD FOR DEPOSITION OF CATHODES FOR POLYMER OPTOELECTRONIC DEVICES - Embodiments of the invention explore solution-based deposition of a cathode for an OLED structure. A typical embodiment of the invention may include a method performed according to the following steps: Glass substrates including deposited Indium Tin-Oxide (ITO) are prepared. The substrates are subjected to ultrasonic cleaning with deionized water and organic solvents. Features are etched into the ITO using high concentration HCl solution. A hole injecting layer is deposited by spin coater. The layer is annealed on a hot plate, then a polyphenylene vinylene (PPV) polymer is deposited by spin coater and annealed on a hot plate. Low work function cathode metal is then deposited in an electroless solution and annealed on a hot plate. The device is encapsulated.08-04-2011
20110263054BOND PAD ISOLATION AND CURRENT CONFINEMENT IN AN LED USING ION IMPLANTATION - An improved method of creating LEDs is disclosed. Rather than using a dielectric coating to separate the bond pads from the top surface of the LED, this region of the LED is implanted with ions to increase its resistivity to minimize current flow therethrough. In another embodiment, a plurality of LEDs are produced on a single substrate by implanting ions in the regions between the LEDs and then etching a trench, where the trench is narrower than the implanted regions and positioned within these regions. This results in a trench where both sides have current confinement capabilities to reduce leakage.10-27-2011
20110070673SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - The semiconductor device 03-24-2011
20110070672MANUFACTURING METHOD FOR ORGANIC LIGHT EMITTING DEVICE - A method for manufacturing an organic light emitting device is disclosed. In one embodiment, the method includes an organic light emitting diode comprising a first electrode, a light emission layer, and a second electrode on a substrate; forming a first protection film by loading the substrate on which the organic light emitting diode has been formed to an inkjet device in a first direction; and forming a second protection film by loading the substrate on which the first protection film has been formed in a second direction, the first and the second direction being formed differently from each other.03-24-2011
20120040480LIGHT EMITTING DEVICE AND THE MANUFACTURE METHOD THEREOF - This invention provides a light-emitting element and the manufacture method thereof. The light-emitting element is suitable for flip-chip bonding and comprises an electrode having a plurality of micro-bumps for direct bonding to a submount. Bonding within a relatively short distance between the light-emitting device and the submount can be formed so as to improve the heat dissipation efficiency of the light-emitting device.02-16-2012
20120040479LIGHT EMITTING ELEMENT, A LIGHT EMITTING DEVICE, A METHOD OF MANUFACTURING A LIGHT EMITTING ELEMENT AND A METHOD OF MANUFACTURING A LIGHT EMITTING DEVICE - The present invention provides a light-emitting element, a method of manufacturing the light-emitting element, a light-emitting device, and a method of manufacturing the light-emitting device. A method of manufacturing a light-emitting element includes: forming a first conductive layer of a first conductive type, a light-emitting layer, and a second conductive layer of a second conductive type on at least one first substrate, forming an ohmic layer on the second conductive layer and bonding the at least one first substrate to a second substrate. The second substrate being larger than the first substrate. The method further includes etching portions of the ohmic layer, the second conductive layer, and the light-emitting layer to expose a portion of the first conductive layer.02-16-2012
20120009697CHEMICAL VAPOR DEPOSITION APPARATUS AND METHOD OF FORMING SEMICONDUCTOR EPITAXIAL THIN FILM USING THE SAME - A chemical vapor deposition apparatus includes: a reaction chamber including an inner tube having a predetermined volume of an inner space, and an outer tube tightly sealing the inner tube; a wafer holder disposed within the inner tube and on which a plurality of wafers are stacked at predetermined intervals; and a gas supply unit including at least one gas line supplying an external reaction gas to the reaction chamber, and a plurality of spray nozzles communicating with the gas line to spray the reaction gas to the wafers, whereby semiconductor epitaxial thin films are grown on the surfaces of the wafers, wherein the semiconductor epitaxial thin film grown on the surface of the wafer includes a light emitting structure in which a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer are sequentially formed.01-12-2012
20120015462METHOD OF MANUFACTURING LED MODULE - A method for manufacturing an LED module, including steps of: providing a heat conductive plate and an LED die, the heat conductive plate defining a concave groove therein; forming an electrode circuit layer on the heat conductive plate around the concave groove; plating one metal layer on a bottom of the concave groove of the heat conductive plate, and plating another metal layer on the LED die; eutectically bonding the metal layer of the heat conducting plate and the metal layer of the LED die together to form into an eutectic layer; forming electrodes on the LED die, and connecting the electrodes with the electrode circuit layer; and encapsulating the LED die in the concave groove.01-19-2012
20110165706Method for Fabricating LED Chip Comprising Reduced Mask Count and Lift-Off Processing - A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode.07-07-2011
20120115261METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE PACKAGE AND FRAME FOR MANUFACTURING LIGHT EMITTING DEVICE PACKAGE - A method for manufacturing a light emitting device package includes: preparing a base frame including an annular base part, at least a pair of lead parts extending to an inner side of the base part, and at least one support part extending to the inner side of the base part in a direction different from that of the lead parts and having a step structure formed on at least one surface of an end thereof; forming a package main body such that the package main body is combined to the step structure of the support part; separating the lead parts from the base part; disposing a light emitting device on at least one of the lead parts; and separating the package main body from the support part.05-10-2012
20120070920Method for mounting luminescent device - A method for mounting a luminescent device having a mount layer on a substrate, comprising the steps of coating a metallic nano-particle paste on the substrate, disposing the mount layer of the luminescent device on the metallic nano-particle paste, and heating the mount layer and the metallic nano-particle paste to form an alloy, thereby bonding the luminescent device and the substrate.03-22-2012
20120070921METHOD OF MAKING A LIGHT EMITTING DEVICE HAVING A MOLDED ENCAPSULANT - Disclosed herein is a method of making a light emitting device having an LED die and a molded encapsulant made by polymerizing at least two polymerizable compositions. The method includes: (a) providing an LED package having an LED die disposed in a reflecting cup, the reflecting cup filled with a first polymerizable composition such that the LED die is encapsulated; (b) providing a mold having a cavity filled with a second polymerizable composition; (c) contacting the first and second polymerizable compositions; (d) polymerizing the first and second polymerizable compositions to form first and second polymerized compositions, respectively, wherein the first and second polymerized compositions are bonded together; and (e) optionally separating the mold from the second polymerized composition. Light emitting devices prepared according to the method are also described.03-22-2012
20110092002METHOD FOR FABRICATING A LIGHT EMITTING DIODE PACKAGE STRUCTURE - The present invention discloses a method for fabricating a light emitting diode (LED) package structure. The method comprises the following steps: a carrier having a substrate and a first protrusion is provided, wherein the first protrusion is disposed on the substrate and has a recess. An adhesion layer and a LED chip are disposed on a bottom of the recess, wherein the adhesion layer is bonded between the carrier and the LED chip, and a ratio between a width of the recess and a width of the LED chip is larger than 1 and smaller than or equal to 1.5 such that a gap existing between a sidewall of the LED chip and an inner sidewall of the recess.04-21-2011
20110039357METHOD OF MAKING A SEMICONDUCTOR CHIP ASSEMBLY WITH A POST/BASE HEAT SPREADER AND AN ADHESIVE BETWEEN THE BASE AND A TERMINAL - A method of making a semiconductor chip assembly includes providing a thermal post, a signal post, a base and a terminal, mounting an adhesive on the base including inserting the thermal post into a first opening in the adhesive and the signal post into a second opening in the adhesive, mounting a conductive layer on the adhesive including aligning the thermal post with a first aperture in the conductive layer and the signal post with a second aperture in the conductive layer, then flowing the adhesive upward between the thermal post and the conductive layer and between the signal post and the conductive layer and downward between the base and the terminal, solidifying the adhesive, providing a conductive trace that includes a pad, the terminal and the signal post, wherein the pad includes a selected portion of the conductive layer, mounting a semiconductor device on a heat spreader that includes the thermal post and the base, electrically connecting the semiconductor device to the conductive trace and thermally connecting the semiconductor device to the heat spreader.02-17-2011
20100210046Light emitting diode chip, and methods for manufacturing and packaging the same - A light emitting diode chip includes a substrate, an epitaxial layer, two inclined plane units, and two electrode units. The substrate has top and bottom surfaces. The epitaxial layer is disposed on the top surface of the substrate. Each of the inclined plane units is inclined downwardly and outwardly from the epitaxial layer toward the bottom surface of the substrate, and includes an inclined sidewall formed on the epitaxial layer, and a substrate inclined wall formed on the substrate. Each of the electrode units includes an electrode disposed on the epitaxial layer, and a conductive portion extending from the electrode to the substrate inclined wall along corresponding one of the inclined plane units.08-19-2010
20100210049METHOD OF MAKING A SEMICONDUCTOR CHIP ASSEMBLY WITH A POST/BASE HEAT SPREADER AND DUAL ADHESIVES - A method of making a semiconductor chip assembly includes providing a post and a base, mounting a first adhesive on the base including inserting the post through an opening in the first adhesive, mounting a conductive layer on the base including aligning the post with an aperture in the conductive layer, providing a conductive trace that includes a pad, a terminal and a selected portion of the conductive layer, then flowing a second adhesive into and downward in a gap between the post and the conductive trace, solidifying the second adhesive, then mounting a semiconductor device on a heat spreader that includes the post and the base, electrically connecting the semiconductor device to the conductive trace and thermally connecting the semiconductor device to the heat spreader.08-19-2010
20120220059METHOD FOR PRODUCING LIGHT-EMITTING DIODE DEVICE - A method for producing a light-emitting diode device includes the steps of: preparing a light-emitting laminate including an optical semiconductor layer, and an electrode unit formed on the optical semiconductor layer; forming an encapsulating resin layer on the optical semiconductor layer so as to cover the electrode unit, the encapsulating resin layer containing a light reflection component; partially removing the encapsulating resin layer so as to expose the top face of the electrode unit, thereby producing a light-emitting diode element; and disposing the light-emitting diode element and a base substrate provided with terminals so that the light-emitting diode element and the base substrate face each other, and that the electrode unit and the terminals are electrically connected, thereby flip chip mounting the light-emitting diode element on the base substrate.08-30-2012
20120252144METHOD FOR THERMALLY CONTACTING OPPOSING ELECTRICAL CONNECTIONS OF A SEMICONDUCTOR COMPONENT ARRANGEMENT - The invention relates to thermally contacting a semiconductor component arrangement, wherein at least one of two heat conducting bodies disposed on opposite sides of the semiconductor component arrangement is brought into contact with a contact surface of the semiconductor component arrangement by means of a metal layer under the application of a force, wherein the metal layer melts during solidification of a locking agent, forming an adhesive bond between the two heat transfer bodies over the entire region thereof.10-04-2012
20100047938FLAT PANEL DISPLAY DEVICE AND METHOD FOR FABRICATING SAME - Provided is a flat panel display device and a method for fabricating the same. The flat panel display device comprises a first substrate, a light emitting unit, a second substrate, and insulating films. The light emitting unit comprises thin film transistors positioned on the first substrate, a first electrode electrically connecting with the thin film transistors, a second electrode facing the first electrode, and an emission layer or a liquid crystal layer interposed between the first and second electrodes. The second substrate is sealed with the first substrate by an ultraviolet curing sealant, and has a greater thermal expansion coefficient than the first substrate. The insulating films are positioned on one or more surfaces of the first and/or second substrates.02-25-2010
20100047937LED PACKAGE - A Chip on Board (COB) package which can reduce the manufacturing costs by using a general PCB as a substrate, increase a heat radiation effect from a light source, thereby realizing a high quality light source at low costs, and a manufacturing method thereof. The COB package includes a board-like substrate with a circuit printed on a surface thereof, the substrate having a through hole. The package also includes a light source positioned in the through hole and including a submount and a dome structure made of resin, covering and fixing the light source to the substrate. The invention allows a good heat radiation effect by using the general PCB as the substrate, enabling manufacture of a high quality COB package at low costs. This in turn improves emission efficiency of the light source, ultimately realizing a high quality light source.02-25-2010
20100047936METHOD FOR PACKAGING LIGHT-EMITTING DIODE - Disclosed is a method for packaging an LED by a thermoplastic copolymer. The copolymer is polymerized by 100 parts by weight of an acrylic ester, 0.1 to 30 parts by weight of a hydrogen bond monomer, and 0.1 to 70 parts by weight of a bulky monomer. The copolymer has transparency greater than 90%, thermal resistance greater than 130° C., and moisture absorption less than 0.5 wt %, such that the copolymer may be applied as packaging material for a light emitting device.02-25-2010
20100047935LED PACKAGING METHOD USING A SCREEN PLATE - A LED packaging method includes a procedure of placing a screen plate having stepped holes on a substrate carrying LED chips, a procedure of reversing the screen plate with respect to the substrate, and a procedure of packaging the LED chips with a first packaging adhesive and a second packaging adhesive by means of applying the first packaging adhesive to the small diameter portion of each stepped hole when the first side of the screen plate is attached to the substrate and then applying the second packaging adhesive to the big diameter portion of each stepped hole after the screen plate is reversed.02-25-2010
20120329183MANUFACTURING METHOD OF PRINTING CIRCUIT BOARD WITH MICRO-RADIATORS - The present invention relates to a manufacturing method of a printing circuit board. The manufacturing method mainly includes: forming one or more cylindrical micro-radiators by cutting a high conductive and electrical insulating substrate according to predetermined size; manufacturing one or more mounting holes in copper clad plates and prepregs; embedding the cylindrical micro-radiators into the mounting holes. The present invention combines the micro-radiator with high thermal conductivity and traditional stiffness printing circuit board. The printing circuit board with micro-radiators has the advantages of high thermal conductivity and stable heat transfer, and also has the advantages of routing flexibility and reliable electrical connections.12-27-2012
20090017566Substrate Removal During LED Formation - A light emitting diode (LED) is fabricated using an underfill layer that is deposited on either the LED or the submount prior to mounting the LED to a submount. The deposition of the underfill layer prior to mounting the LED to the submount provides for a more uniform and void free support, and increases underfill material options to permit improved thermal characteristics. The underfill layer may be used as support for the thin and brittle LED layers during the removal of the growth substrate prior to mounting the LED to the submount. Additionally, the underfill layer may be patterned to and/or polished back so that only the contact areas of the LED and/or submount are exposed. The patterns in the underfill may also be used as a guide to assist in the singulating of the devices.01-15-2009
20080299688METHOD OF BONDING A SOLDER TYPE LIGHT EMITTING DIODE CHIP - In a method of bonding a low-resistance solder type light emitting diode chip, a copper substrate is prepared; an insulating layer is coated on the copper substrate; a conductive layer is formed on the insulating layer; a solder paste is coated onto the conductive layer by silk screen printing; a the chip is placed on the conductive layer and heated to melt the solder paste coated between the conductive layer and the chip; and finally the copper substrate is cooled such that the solder paste forms a solder layer to mount the chip onto the conductive layer.12-04-2008
20110003409LED CHIP PACKAGE STRUCTURE WITH AN EMBEDDED ESD FUNCTION AND METHOD FOR MANUFACTURING THE SAME - An LED chip package structure includes a conductive unit, a first package unit, an ESD unit, a second package unit, a light-emitting unit and a second package unit. The conductive unit has two conductive pins adjacent to each other which form a concave space between each other. The first package unit encloses one part of each conductive pin in order to form a receiving space communicating with the concave space and to expose an end side of each conductive pin. The ESD unit is received in the concave space and electrically connected between the two conductive pins. The second package unit is received in the concave space in order to cover the ESD unit. The light-emitting unit is received in the receiving space and electrically connected between the two conductive pins. The third package unit is received in the receiving space in order to cover the light-emitting unit.01-06-2011
20120322178Method of Producing a Radiation-Emitting Optoelectronic Component - In a method for producing a radiation-emitting optoelectronic component, a semiconductor chip is mounted by a first main area onto a carrier body and is electrically conductively connected at a first contact area to a first connection region, and a transparent electrically insulating encapsulation layer is applied to the chip and the carrier body. A first cutout in the encapsulation layer for at least partly uncovering a second contact area of the chip is produced, and a second cutout in the encapsulation layer for at least partly uncovering a second connection region of the carrier body is produced. Finally, an electrically conductive layer, which electrically conductively connects the second contact area of the semiconductor chip and the second connection region of the carrier body, is applied.12-20-2012
20110229991SEMICONDUCTOR CHIP PACKAGE STRUCTURE FOR ACHIEVING FLIP-CHIP TYPE ELECTRICAL CONNECTION WITHOUT USING WIRE-BONDING PROCESS AND METHOD FOR MAKING THE SAME - A semiconductor chip package structure for achieving flip-chip electrical connection without using a wire-bonding process includes a package unit, a semiconductor chip, a first insulative layer, first conductive layers, a second insulative layer, and second conductive layers. The package unit has a receiving groove. The semiconductor chip is received in the receiving groove and has a plurality of conductive pads disposed on its top surface. The first insulative layer is formed between the conductive pads to insulate the conductive pads. The first conductive layers are formed on the first insulative layer and the package unit, and one side of each first conductive layer is electrically connected to the corresponding conductive pad. The second insulative layer is formed between the first conductive layers in order to insulate the first conductive layers from each other. The second conductive layers are respectively formed on the other opposite sides of the first conductive layers.09-22-2011
20110237006ORGANIC LIGHT-EMITTING COMPONENT - An organic light-emitting component, having a substrate, a first electrode arranged on the substrate, a layer stack that is arranged on the first electrode and that has at least one organic layer and a second electrode arranged on the layer stack. The layer stack is suitable for emitting electromagnetic radiation during operation. The component also has a receiver device, which is suitable for drawing energy from an alternating electromagnetic field and for converting this energy at least partially into electrical energy and for making this energy available to the layer stack.09-29-2011
20120329182SEMICONDUCTOR DEVICE MOUNTING METHOD - When metal junction between a first electrode and a second electrode is executed as ultrasonic bonding between metals including at least copper, the ultrasonic bonding is performed in a state that a contact interface between the first electrode and the second electrode is covered with a bonding auxiliary agent. As a result, formation of oxide at a bonding interface between the first electrode and the second electrode due to execution of the ultrasonic bonding can be suppressed. Therefore, while a desired bonding strength is ensured, ultrasonic bonding with copper used for the first electrode or the second electrode can be fulfilled and cost cuts in mounting of semiconductor devices can be achieved.12-27-2012
20120142126DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate includes a base substrate, a barrier pattern, a source electrode, a drain electrode, a semiconductor layer, an insulating layer, and a gate electrode. The barrier pattern protrudes from the base substrate. The source and gate electrodes are formed adjacent to opposite sides of the barrier pattern on the base substrate. The semiconductor layer is provided on the barrier pattern to connect the source electrode with the drain electrode, and the insulating layer covers the semiconductor layer, the source electrode, and the drain electrode. The gate electrode is provided on the insulating layer, and is overlapped with the semiconductor layer.06-07-2012
20100167436METHOD OF MAKING A SEMICONDUCTOR CHIP ASSEMBLY WITH A POST/BASE HEAT SPREADER AND A SIGNAL POST - A method of making a semiconductor chip assembly includes providing a thermal post, a signal post and a base, mounting an adhesive on the base including inserting the thermal post into a first opening in the adhesive and the signal post into a second opening in the adhesive, mounting a conductive layer on the adhesive including aligning the thermal post with a first aperture in the conductive layer and the signal post with a second aperture in the conductive layer, then flowing the adhesive into and upward in a first gap located in the first aperture between the thermal post and the conductive layer and in a second gap located in the second aperture between the signal post and the conductive layer, solidifying the adhesive, then providing a conductive trace that includes a pad, a terminal, the signal post and a selected portion of the conductive layer, mounting a semiconductor device on a heat spreader that includes the thermal post and the base, electrically connecting the semiconductor device to the conductive trace and thermally connecting the semiconductor device to the heat spreader.07-01-2010
20100167438METHOD OF MAKING A SEMICONDUCTOR CHIP ASSEMBLY WITH AN ALUMINUM POST/BASE HEAT SPREADER AND A SILVER/COPPER CONDUCTIVE TRACE - A method of making a semiconductor chip assembly includes providing a post and a base, mounting an adhesive on the base including inserting the post into an opening in the adhesive, mounting a copper layer on the adhesive including aligning the post with an aperture in the copper layer, then flowing the adhesive into and upward in a gap located in the aperture between the post and the copper layer, solidifying the adhesive, then providing a conductive trace that includes a pad, a terminal, a silver coating and a copper core that is a selected portion of the copper layer, mounting a semiconductor device on the post, wherein an aluminum heat spreader includes the post and the base, electrically connecting the semiconductor device to the conductive trace and thermally connecting the semiconductor device to the heat spreader.07-01-2010
20120149138Method for Manufacturing Heat Dissipation Bulk of Semiconductor Device - A method for manufacturing a heat dissipation bulk of a semiconductor device including the following steps is described. An electrically conductive layer is formed to cover a surface of a temporary substrate. At least one semiconductor chip is connected to the electrically conductive layer by at least one metal bump, wherein the at least one metal bump is located between the at least one semiconductor chip and the electrically conductive layer. A metal substrate is formed on the electrically conductive layer, wherein the metal substrate fills up a gap between the at least one semiconductor chip and the electrically conductive layer. The temporary substrate is removed.06-14-2012
20130017631METHOD OF MANUFACTURING LIGHT-EMITTING DEVICEAANM TAKEDA; ShigeoAACI Kiyosu-shiAACO JPAAGP TAKEDA; Shigeo Kiyosu-shi JPAANM ISHIDA; MakotoAACI Kiyosu-shiAACO JPAAGP ISHIDA; Makoto Kiyosu-shi JPAANM TERAKAMI; MitsushiAACI Kiyosu-shiAACO JPAAGP TERAKAMI; Mitsushi Kiyosu-shi JPAANM YAMAMORI; ShotaAACI Kiyosu-shiAACO JPAAGP YAMAMORI; Shota Kiyosu-shi JP - A method of manufacturing a light-emitting device includes providing a plate-shaped substrate, forming a lattice frame on a light-emitting element mounting surface of the plate-shaped substrate, mounting a light-emitting device in an opening of the lattice frame on the light-emitting element mounting surface, sealing the light-emitting element by supplying a sealing material into the opening of the lattice frame, and cutting the lattice frame and the plate-shaped substrate so as to split the lattice flame to obtain a plurality of light-emitting devices with a sidewall.01-17-2013
20110159614Method for Fabricating LED Chip Comprising Reduced Mask Count and Lift-Off Processing - A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode.06-30-2011
20110159613Method for Fabricating LED Chip Comprising Reduced Mask Count and Lift-Off Processing - A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode.06-30-2011
20110159612Method for Fabricating LED Chip Comprising Reduced Mask Count and Lift-Off Processing - A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode.06-30-2011
20110159611METHOD FOR MANUFACTURING SOI SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A highly reliable semiconductor device capable of high speed operation is manufactured over a flexible substrate at a high yield. A separation layer is formed over an insulating substrate by a sputtering method; the separation layer is flattened by a reverse sputtering method; an insulating film is formed over the flattened separation layer; a damaged area is formed by introducing hydrogen or the like into a semiconductor substrate; an insulating film is formed over the semiconductor substrate in which the damaged area is formed; the insulating film formed over the insulating substrate is bonded to the insulating film formed over the semiconductor substrate, the semiconductor substrate is separated at the damaged area so that a semiconductor layer is formed over the insulating substrate; the semiconductor layer is flattened so as to form an SOI substrate; and the semiconductor device is formed over the SOI substrate.06-30-2011
20130023071DONOR SUBSTRATE, METHOD OF MANUFACTURING A DONOR SUBSTRATE AND METHOD OF MANUFACTURING AN ORGANIC LIGHT EMITTING DISPLAY DEVICE USING A DONOR SUBSTRATE - A donor substrate may include a base substrate, an expansion layer positioned on the base substrate, a light-to-heat conversion layer on the expansion layer, an insulation layer located on the light-to-heat conversion layer, and an organic transfer layer on the insulation layer. The donor substrate may effectively and uniformly transfer the organic transfer layer onto a display substrate of an organic light emitting display device.01-24-2013
20080220549Sealed light emitting diode assemblies including annular gaskets and methods of making same - An optoelectronic device assembly includes a circuit board and an optoelectronic device disposed on the circuit board and electrically connected with the circuit board. An annular gasket is disposed on the circuit board and surrounds the optoelectronic device. A sealant is disposed over and seals at least a portion of the circuit board and also covers at least an outer annular portion of the annular gasket. The sealant is not disposed over the optoelectronic device. In a method, an optoelectronic device is disposed on a circuit board, the disposing including electrically connecting the optoelectronic device with the circuit board. An annular gasket is disposed on the circuit board to surround the optoelectronic device. The circuit board is sealed with a sealant that also covers at least an outer annular portion of the annular gasket, but does not cover the optoelectronic device.09-11-2008
20080220548MULTI-CHIP SURFACE MOUNTED LED STRUCTURE AND A METHOD FOR MANUFACTURING THE SAME - A multi-chip surface mounted LED structure and a method for manufacturing the same, said LED structure comprises a plurality of equivalent lighting units, each lighting unit comprises an LED chip, a heat sink structure, two opposing electrodes, said plurality of equivalent lighting units are mutually connected by a supporting structure; said method comprises the steps of firstly cutting a metal material belt to form a basic shape and using plastic injection molding to form said supporting structure, and then using chip bonding and wire bonding to connect said two opposing electrodes, and connecting adjacent lighting units in series/parallel, and finally cutting off a spare region of said metal material belt and packaging sad LED structure to form said multi-chip surface mounted LED structure; furthermore, a plurality of multi-chip surface mounted LED structures can be mutually connected in series/parallel by directly cutting said metal material belt to form a connection area thereon to enable conductivity between adjacent multi-chip surface mounted LED structures.09-11-2008
20130178001Method for Making LED LAMP - A method for making an LED lamp includes a first step of working a base plate, a second step of placing the base plate in a die cavity of an injection molding machine, and a third step of forming a housing in the die cavity of the injection molding machine to combine the housing with the base plate. The base plate is integrally combined with the housing completely by injection molding so that the base plate and the housing are combined closely and solidly and will not detach from each other.07-11-2013
20130095581THICK WINDOW LAYER LED MANUFACTURE - A LED die and method for bonding, dicing, and forming the LED die are disclosed. In an example, the method includes forming a LED wafer, wherein the LED wafer includes a substrate and a plurality of epitaxial layers disposed over the substrate, wherein the plurality of epitaxial layers are configured to form a LED; bonding the LED wafer to a base-board to form a LED pair; and after bonding, dicing the LED pair, wherein the dicing includes simultaneously dicing the LED wafer and the base-board, thereby forming LED dies.04-18-2013
20130095582Method for Manufacturing Sealed Structure - A method for manufacturing a sealed structure in which few cracks are generated is provided. Scan with the laser beam is performed so that there is no difference in an irradiation period between the middle portion and the perimeter portion of the glass layer and so that the scanning direction is substantially parallel to the direction in which solidification of the glass layer after melting proceeds. More specifically, in a region where the beam spot is overlapped with the glass layer, scan is performed with a laser beam having a beam spot shape whose width in a scanning direction is substantially uniform. Further, as a laser beam with which the glass layer is irradiated, a laser beam (a linear laser beam) having a linear beam spot shape with a major axis and a minor axis which is orthogonal to the major axis.04-18-2013
20130130418METHOD FOR PRODUCING LARGE LIGHTING WITH POWER LED - The present invention relates to a method for manufacturing large lighting which uses a power LED, such as for large LED lighting for street lamps, which incorporates a heat dissipation device that has the ability to dissipate heat with natural convection to maintain ambient temperature. The disclosed method is novel applied technology for producing a large LED lighting, such as for street lamps, which has a power LED device with a unique, rear heat dissipation capability. In addition to maximum thermal efficiency by heat dissipation, the present LED lighting system also increases luminous efficiency by providing high light emission with only a small quantity of LED power.05-23-2013
20130143337ORGANIC ELECTROLUMINESCENT DEVICE - The invention relates to OLED devices (06-06-2013
20080199982Fabrication Process for Package With Light Emitting Device On A Sub-Mount - A method of fabricating a package with a light emitting device includes depositing a first metallization to form a conductive pad on which the light emitting device is to be mounted and to form one or more feed-through interconnections extending through a semiconductor material that supports the conductive pad. Subsequently, a second metallization is deposited to form a reflective surface for reflecting light, emitted by the light emitting device, through a lid of the package. Deposition of the second metallization is de-coupled from deposition of the first metallization.08-21-2008
20110223696UNDERFILL PROCESS FOR FLIP-CHIP LEDS - An underfill technique for LEDs uses compression molding to simultaneously encapsulate an array of flip-chip LED dies mounted on a submount wafer. The molding process causes liquid underfill material (or a softened underfill material) to fill the gap between the LED dies and the submount wafer. The underfill material is then hardened, such as by curing. The cured underfill material over the top and sides of the LED dies is removed using microbead blasting. The exposed growth substrate is then removed from all the LED dies by laser lift-off, and the underfill supports the brittle epitaxial layers of each LED die during the lift-off process. The submount wafer is then singulated. This wafer-level processing of many LEDs simultaneously greatly reduces fabrication time, and a wide variety of materials may be used for the underfill since a wide range of viscosities is tolerable.09-15-2011
20130149802METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT - Provided is a method of manufacturing a semiconductor element having at a cut portion with excellent quality, which minimizes a region on a silicon substrate necessary for cutting, and which prevents cutting water used when cutting by dicing is carried out from entering the semiconductor element. The method of manufacturing a semiconductor element includes: arranging, on the silicon substrate, multiple semiconductor element portions so as to be adjacent to one another; bonding the silicon substrate and a glass substrate together using the resin; and cutting the silicon substrate and the glass substrate, respectively, in a region in which the resin is provided, the cutting the silicon substrate and the glass substrate including: half-cutting the silicon substrate by dicing; cutting the glass substrate by scribing; and dividing the silicon substrate, the glass substrate, and the resin.06-13-2013
20130183776UV-CURABLE ADHESIVE SILICONE COMPOSITION, UV-CURABLE ADHESIVE SILICONE COMPOSITION SHEET, OPTICAL SEMICONDUCTOR APPARATUS AND METHOD FOR MANUFACTURING THE SAME - A UV-curable adhesive silicone composition includes: (A) an organopolysiloxane having a resin structure consisting of R07-18-2013
20120009698DISPLAY DEVICE, METHOD FOR MANUFACTURING THE SAME AND APPARATUS FOR MANUFACTURING THE SAME - The present inventions provides a method for manufacturing a film-type display device efficiently, and a method for manufacturing a large-size film-type display device, and an apparatus for manufacturing the film-type display device. An apparatus for manufacturing a film-type display device includes: transferring means for transferring a substrate over which an integrated circuit constituting the display device is provided; first separating means for separating the integrated circuit from the substrate by adhering a first sheet material to one surface of the integrated circuit; second separating means for separating the integrated circuit from the first sheet material by adhering a second sheet material to the other surface of the integrated circuit; processing means for forming one or both of a conductive film and an insulating film on the integrated circuit; and sealing means for sealing the processed integrated circuit with the second sheet material and a third sheet material.01-12-2012
20120021541LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - A method of fabricating a light emitting device initially forms a copper clad ceramic board of the light emitting device using hot-pressing technique at high temperature and photolithography process. Next, a circuit of the light emitting device is formed using die bonding and wire bonding/flipchip processes. Finally, the light emitting device is sealed using transfer molding or injection molding process.01-26-2012
20120088318Method for Fabricating a Vertical Light-Emitting Diode with High Brightness - A method for fabricating a vertical light-emitting diode comprises forming a stack including a plurality of epitaxial layers on a patterned first substrate, placing a second substrate on the stack, removing the first substrate to expose the first surface, planarizing a first surface of the stack that was in contact with the patterned first substrate and has a pattern corresponding to a pattern provided on the first substrate to form a planarized second surface, and forming a first electrode in contact with a side of the second substrate that is opposite to the stack, and a second electrode in contact with the second surface of the stack. A roughening step can be performed to form uneven surface portions on a region of the second surface for improving light emission through the second surface of the stack.04-12-2012
20130210176METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DEVICE - Provided is a method of manufacturing an organic light emitting device capable of suppressing a patterning defect caused by a residue of a release layer, the method including: a first organic compound layer formation step; a first protective layer formation step; a second protective layer formation step; a second protective layer processing step; a first protective layer processing step; a first organic compound layer processing step; a second organic compound layer formation step; and a lift-off step in which the pattern of the second protective layer obtained in the second protective layer processing step is formed also in a second region.08-15-2013
20130210177METHOD FOR MANUFACTURING AN ORGANIC ELECTRONIC DEVICE - The invention relates to method for manufacturing an electronic device comprising an organic layer (08-15-2013

Patent applications in class Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor

Patent applications in all subclasses Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor