Class / Patent application number | Description | Number of patent applications / Date published |
438024000 | Including device responsive to nonelectrical signal | 49 |
20090093073 | Method of making circuitized substrate with internal optical pathway using photolithography - A method of making a circuitized substrate (e.g., PCB) including at least one and possibly several internal optical pathways as part thereof such that the resulting substrate will be capable of transmitting and/or receiving both electrical and optical signals. The method involves forming at least one opening between a side of the optical core and an adjacent upstanding member such that the opening is defined by at least one angular sidewall. Light passing through the optical core material (or into the core from above) is reflected off this angular sidewall. The medium (e.g., air) within the opening thus also serves as a reflecting medium due to its own reflective index in comparison to that of the adjacent optical core material. The method utilizes many processes used in conventional PCB manufacturing, thereby keeping costs to a minimum. The formed substrate is capable of being both optically and electrically coupled to one or more other substrates possessing similar capabilities, thereby forming an electro-optical assembly of such substrates. | 04-09-2009 |
20090117676 | Semiconductor optical device - A method of fabricating a semiconductor optical device is disclosed. This semiconductor optical device includes first and second optical semiconductor elements. This method comprises the steps of: growing, in a metal-organic vapor phase deposition reactor, plural semiconductor layers for the first semiconductor optical element on a primary surface of a substrate which has first and second areas for the first semiconductor optical element and the second optical semiconductor element, respectively; forming an insulating mask on the plural semiconductor layers and the first area; etching the plural semiconductor layers by use of the insulating mask to form a semiconductor portion having an end face; growing a layer of a first semiconductor on the second area and deposit of the first semiconductor on the end face in the reactor by use of the insulating mask; supplying etchant for etching the first semiconductor to remove at least a part of the deposit of the first semiconductor on the end face by use of the insulating mask; and after removing the deposit of the first semiconductor, growing a layer of a second semiconductor for the second optical element on the second area in the reactor by use of the insulating mask. | 05-07-2009 |
20090186432 | MULTI-CHIP DEVICE AND METHOD FOR MANUFACTURING THE SAME - A multi-chip device includes LED sensors for sensing light separated by a predetermined interval in a wafer, LEDs for emitting light formed over the wafer respectively corresponding to the LED sensors, a driving circuit formed between the LEDs over the wafer, an insulating film over the wafer, and trenches in the insulating film exposing the LEDs. | 07-23-2009 |
20090286336 | MANUFACTURING METHOD OF THIN FILM TRANSISTOR ARRAY SUBSTRATE AND LIQUID CRYSTAL DISPLAY PANEL - A manufacturing method of a thin film transistor array substrate incorporating the manufacture of a photo-sensor is provided. In the manufacturing method, a photo-sensing dielectric layer is formed between a transparent conductive layer and a metal electrode for detecting ambient light. Since the transparent conductive layer is adopted as an electrode, the ambient light can pass through the transparent conductive layer and get incident light into the photo-sensing dielectric layer. Therefore, the sensing area of the photo-sensor can be enlarged and the photo-sensing efficiency is improved. In addition, the other side of the photo sensitive dielectric layer may be a metal electrode. The metal electrode can block the backlight from getting incident into the photo-sensing dielectric layer and thus reduce the background noise. A manufacturing method of a liquid crystal display panel adopting the aforementioned thin film transistor array substrate is also provided. | 11-19-2009 |
20100029026 | METHOD OF FABRICATING AN OPTICAL ANALYSIS DEVICE COMPRISING A QUANTUM CASCADE LASER AND A QUANTUM DETECTOR - The invention relates to a method of fabricating an optical device for analysing a scene, comprising an emitter and a detector in the mid-infrared or far-infrared, characterized in that it comprises:
| 02-04-2010 |
20100330713 | LIQUID CRYSTAL DISPLAY DEVICE WITH PHOTOSENSOR AND METHOD OF FABRICATING THE SAME - A liquid crystal display device comprises a liquid crystal panel including first and second substrates bonded to each other with a liquid crystal layer positioned therebetween, and the photosensor, formed on the second substrate, for sensing an external light from the surroundings, wherein the photosensor includes a semiconductor layer formed on the second substrate and provided with n | 12-30-2010 |
20110129950 | METHOD OF MANUFACTURING SOLID STATE IMAGING DEVICE, SOLID STATE IMAGING DEVICE, AND CAMERA USING SOLID STATE IMAGING DEVICE - A method of manufacturing a solid state imaging device having a photo-electric conversion portion array and a transfer electrode array, these arrays being provided in parallel to each other, upper surfaces and side wall surfaces of the transfer electrode array being covered with a light-shielding layer, and a transparent layer showing an oxidizing property at the time of film formation, the transparent layer being formed on the photo-electric conversion parts and the light-shielding layer. | 06-02-2011 |
20110207250 | BACK-ILLUMINATED TYPE IMAGING DEVICE AND FABRICATION METHOD THEREOF - Light is illuminated from a back-surface side of a silicon substrate | 08-25-2011 |
20110212554 | TRANSPARENT CONDUCTIVE NANO-COMPOSITES - The present invention, in one embodiment, provides a method of forming an organic electric device that includes providing a plurality of carbon nanostructures; and dispersing the plurality of carbon nanostructures in a polymeric matrix to provide a polymeric composite, wherein when the plurality of carbon nanostructures are present at a first concentration an interface of the plurality of carbon nanostructures and the polymeric matrix is characterized by charge transport when an external energy is applied, and when the plurality of carbon nanostructures are present at a second concentration the interface of the plurality of carbon nanostructures and the polymeric matrix are characterized by exciton dissociation when an external energy is applied, wherein the first concentration is less than the second concentration. | 09-01-2011 |
20120288971 | Co-Integration of Photonic Devices on a Silicon Photonics Platform - Disclosed are methods for co-integration of active and passive photonic devices on a planarized silicon-based photonics substrate. In one aspect, a method is disclosed that includes providing a planarized silicon-based photonics substrate comprising a silicon waveguide structure, depositing a dielectric layer over the planarized silicon-based photonics substrate, selectively etching the dielectric layer, thereby exposing at least a portion of the silicon waveguide structure, selectively etching the exposed portion of the silicon waveguide structure to form a template, using the silicon waveguide structure as a seed layer to selectively grow in the template a germanium layer that extends above the dielectric layer, and planarizing the germanium layer to form a planarized germanium layer, wherein the planarized germanium layer does not extend above the dielectric layer. | 11-15-2012 |
20130011945 | IMAGE DISPLAYING DEVICE - An image displaying device having multiple photosensing devices have successfully suppressed a leakage current from each photosensing device and improved the S/N ratio. In the image displaying device, pixels and photosensing devices are disposed as pairs in a matrix pattern on a substrate. Each of the pixels and each of the photosensing devices are driven independently. Each photosensing device includes a semiconductor layer that is a photoelectric conversion layer connected to at least a first electrode and a second electrode. The contact surfaces of the first and second electrodes with respect to the semiconductor layer are disposed so that their center axes are separated from each other. | 01-10-2013 |
20130071960 | INTEGRATED RARE EARTH DEVICES - The invention includes a single chip having multiple different devices integrated thereon for a common purpose. The chip includes a substrate having a peripheral area, a mid-chip area, and a central area. A plurality of FETs are formed in the peripheral area with each FET having a layer of single crystal rare earth material in at least one of a conductive channel, a gate insulator, or a gate stack. A plurality of photonic devices including light emitting diodes or vertical cavity surface emitting lasers are formed in the mid-chip area with each photonic device having an active layer of single crystal rare earth material. A plurality of photo detectors are formed in the central area. | 03-21-2013 |
20130196459 | HYBRID OPTOELECTRONIC DEVICE - A hybrid optoelectronic device having Group III-V and Si composition on a low-cost substrate is disclosed. A photonic integrated circuit implemented by the hybrid optoelectronic device is much inexpensive and superior to those implemented by the conventional Group III-V optoelectronic device. In the hybrid optoelectronic device, a physical vapor deposition method is used to form a RMG structure with a smooth surface, and further produce a RE structure on the RMG structure. It relates a monolithic process. The wavelength and the material which attract interest can be adjusted. Thereby, the optoelectronic device can be manufactured with large yield and productivity. High optical coupling efficiency that can be offered comes from the Group III-V active device to the Si passive device (optical access). This would be beneficial to the application to the photonic integrated circuit and suitable for future development of high-performance electronic and optoelectronic devices. | 08-01-2013 |
20140024151 | METHOD FOR MANUFACTURING ARRAY SUBSTRATE WITH EMBEDDED PHOTOVOLTAIC CELL - A method for manufacturing array substrate with embedded photovoltaic cell includes: providing a substrate; forming a buffer layer on the substrate; forming an amorphous silicon layer on the buffer layer; converting the amorphous silicon layer into a polysilicon layer; forming a pattern on the polysilicon layer; forming a first photoresist pattern on the polysilicon layer and injecting N | 01-23-2014 |
20140024152 | METHOD FOR MANUFACTURING TOUCHING-TYPE ELECTRONIC PAPER - The present invention relates to a touching-type electronic paper and method for manufacturing the same. The touching-type electronic paper includes a TFT substrate and a transparent electrode substrate which are disposed as a cell. The transparent electrode substrate includes a common electrode, microcapsule electronic ink and light guiding poles as light transmitting passages, all of which are formed on a first substrate. The TFT substrate comprises displaying electrodes, first TFTs for driving the displaying electrodes, second TFTs for detecting lights transmitting through the light guiding poles and for producing level signals, and third TFTs for reading the level signals and sending the level signals to a back-end processing system, all of which are formed on a second substrate. The light guiding poles are opposite to the second TFTs respectively. The present invention makes the natural lights or other lights outside transmitted to the second TFTs through the light guiding poles by disposing the light guiding poles as light transmitting passages and disposing the second TFTs as light sensor units. The present invention has many advantages such as simple structure, simple manufacturing process and low cost, so as to have a wide application prospect. | 01-23-2014 |
20140038321 | PHOTOCONDUCTIVE SWITCH PACKAGE - A photoconductive switch is formed of a substrate that has a central portion of SiC or other photoconductive material and an outer portion of cvd-diamond or other suitable material surrounding the central portion. Conducting electrodes are formed on opposed sides of the substrate, with the electrodes extending beyond the central portion and the edges of the electrodes lying over the outer portion. Thus any high electric fields produced at the edges of the electrodes lie outside of and do not affect the central portion, which is the active switching element. Light is transmitted through the outer portion to the central portion to actuate the switch. | 02-06-2014 |
20140087495 | ORGANIC LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME - An organic light emitting element includes an organic light emitting diode formed on a substrate, coupled to a transistor including a gate, a source and a drain and including a first electrode, an organic thin film layer and a second electrode; a photo diode formed on the substrate and having a semiconductor layer including a high-concentration P doping region, a low-concentration P doping region, an intrinsic region and a high-concentration N doping region; and a controller that controls luminance of light emitted from the organic light emitting diode, to a constant level by controlling a voltage applied to the first electrode and the second electrode according to the voltage outputted from the photo diode. | 03-27-2014 |
20140141546 | METHOD OF FABRICATING OPTOELECTRONIC INTEGRATED CIRCUIT SUBSTRATE - A method of fabricating an optoelectronic integrated circuit substrate includes defining a photonic device region on a first substrate, the photonic device region having a photonic device formed thereon, forming a trench in the photonic device region on a top surface of the first substrate, the trench having a first depth, filling the trench with a dielectric, bonding a second substrate on the first substrate to cover the trench, and thinning the second substrate to a first thickness. | 05-22-2014 |
20140212999 | PHOTOELECTRIC CONVERSION DEVICE, IMAGE DISPLAY, METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE, AND METHOD OF MANUFACTURING IMAGE DISPLAY - A photoelectric conversion device includes a plurality of photoelectric conversion regions disposed over a substrate, and a colored region disposed among the photoelectric conversion regions over the substrate, the colored region forming an image over the substrate. | 07-31-2014 |
20140287542 | IR SENSING TRANSISTOR AND MANUFACTURING METHOD OF DISPLAY DEVICE INCLUDING THE SAME - An IR sensing transistor according to an exemplary embodiment of the present invention includes: a light blocking layer formed on a substrate; a gate insulating layer formed on the light blocking layer; a semiconductor formed on the gate insulating layer; a pair of ohmic contact members formed on the semiconductor; a source electrode and a drain electrode formed on respective ones of the ohmic contact members; a passivation layer formed on the source electrode and the drain electrode; and a gate electrode formed on the passivation layer, wherein substantially all of the gate insulating layer lies on the light blocking layer. | 09-25-2014 |
20150331187 | Method of Integrating All Active and Passive Optical Devices on Silicon-based Integrated Circuit - A method is provided to integrate all active and passive integrated optical devices on a silicon (Si)-based integrated circuit (IC). A Si-based substrate, instead of a Si-on-insulator (SOI) substrate, is used for integrating the devices. Therefore, cost is down and heat dissipation efficiency is enhanced. Besides, rapid melt growth (RMG) is used for solving problems on integrating the electric circuit and the optical devices. The present invention can be used to develop a proactive optical transceivers on a standard chip; or, to fully and compatibly integrate all devices on a circuit for an optical communication chip. | 11-19-2015 |
20150380597 | FIELD-EFFECT LOCALIZED EMITTER PHOTOVOLTAIC DEVICE - Photovoltaic structures are provided with field-effect inversion/accumulation layers as emitter layers induced by work-function differences between gate conductor layers and substrates thereof. Localized contact regions are in electrical communication with the gate conductors of such structures for repelling minority carriers. Such localized contact regions may include doped crystalline or polycrystalline silicon regions between the gate conductor and silicon absorption layers. Fabrication of the structures can be conducted without alignment between metal contacts and the localized contact regions or high temperature processing. | 12-31-2015 |
20160054609 | SUBSTRATE FOR IN-CELL TYPE TOUCH SENSOR LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An array substrate for an in-cell type touch sensor liquid crystal display device includes: a substrate; a gate line and a data line on the substrate; a thin film transistor connected to the gate line and the data line; a first passivation layer on the thin film transistor; a common electrode on the first passivation layer; an etching preventing pattern covering the drain contact hole; an x sensing line and a y sensing line on the common electrode; a second passivation layer on the x sensing line and the y sensing line; and a pixel electrode on the second passivation layer. | 02-25-2016 |
20160116673 | VARIABLE BURIED OXIDE THICKNESS FOR A WAVEGUIDE - A semiconductor structure is provided in which a plurality of waveguide structures are embedded within a semiconductor handle substrate. Each waveguide structure includes, from bottom to top, a bottom oxide portion, a waveguide core material portion and a top oxide portion. An oxide capping layer is present on topmost surfaces of each waveguide structure and a topmost surface of the semiconductor handle substrate. A plurality of semiconductor devices is located above a topmost surface of the oxide capping layer. The structure has thicker buried oxide regions defined by the combined thicknesses of the top oxide portion and the oxide capping layer located in some areas, while thinner buried oxide regions defined only by the thickness of the oxide capping layer are present in other areas of the structure. | 04-28-2016 |
20160118529 | SIGNAL DISTRIBUTION IN INTEGRATED CIRCUIT USING OPTICAL THROUGH SILICON VIA - An optical through silicon via is formed in a silicon substrate of an integrated circuit. A photo detector is formed within the integrated circuit and is optically coupled to a first side of the optical through silicon via. A light generating source optically coupled to a second side of the optical through silicon via is provided. The photo detector is configured to receive a light, generated by the light generating source, propagating through the optical through silicon via. The light, generated by the light generating source, is controlled by a signal generated by a signal generating source. | 04-28-2016 |
438025000 | Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor | 24 |
20090275152 | PROCESS FOR THE COLLECTIVE FABRICATION OF MICROSTRUCTURES CONSISTING OF SUPERPOSED ELEMENTS - The invention relates to the collective fabrication of superposed microstructures, such as an integrated circuit and a protective cover. Individual structures each comprising superposed first and second elements are fabricated collectively. The first elements (for example, integrated circuit chips) are prepared on a first plate and the second elements (for example, transparent covers) are prepared on a second plate. The plates are bonded to each other over the major portion of their facing surfaces, but with no bonding of the defined zones in which there is no adhesion. The individual structures are then diced via the top on the one hand and via the bottom on the other hand along different parallel dicing lines passing through the zones with no adhesion, so that, after dicing, the first elements retain surface portions (those lying between the parallel dicing lines) that are not covered by a second element. A connection pad may thus remain accessible at this point. | 11-05-2009 |
20100093117 | Method for making liquid crystal display screen - A method for making a liquid crystal display screen is provided. The method includes the following steps. A touch panel and a thin film transistor panel are provided, and the touch panel includes at least one TP carbon nanotube layer. The thin film transistor panel includes a plurality of thin film transistors; each of the thin film transistors comprises a TFT carbon nanotube layer. A first polarizer is applied on a surface of the touch panel. Additionally, a liquid crystal layer is provided to be placed between the first polarizer and the thin film transistor panel. | 04-15-2010 |
20100099206 | MANUFACTURING METHOD OF THIN FILM TRANSISTOR ARRAY SUBSTRATE AND LIQUID CRYSTAL DISPLAY PANEL - A manufacturing method of a thin film transistor array substrate is provided. In the method, a substrate having a display region and a sensing region is provided. At least a display thin film transistor is formed in the display region, a first sensing electrode is formed in the sensing region, and an inter-layer dielectric layer is disposed on the substrate, covers the display thin film transistor, and exposes the first sensing electrode. A patterned photo sensitive dielectric layer is then formed on the first sensing electrode. A patterned transparent conductive layer is subsequently formed on the substrate, wherein the patterned transparent conductive layer includes a pixel electrode coupled to the corresponding display thin film transistor and includes a second sensing electrode located on the patterned photo sensitive dielectric layer. A manufacturing method of a liquid crystal display panel adopting the aforementioned thin film transistor array substrate is also provided. | 04-22-2010 |
20100267176 | LIGHT EMITTING APPARATUS AND FABRICATION METHOD THEREOF - A light emitting apparatus comprising a substrate, a first functional chip and a first light emitting component is provided. The substrate, the first functional chip, and the first light emitting component have a plurality of first bumps. In addition, the first functional chip has a plurality of first vias. The first light emitting component and the first functional chip are stacked on the substrate. Hence, the first light emitting component is electrically connected to the first functional chip and the substrate by the first vias and the first bumps. | 10-21-2010 |
20110217798 | OPTICAL TRANSMISSION MODULE AND MANUFACTURING METHOD OF THE SAME - [Problems] To accommodate a plurality of optical semiconductor elements in one package with their optical axes aligned highly precisely. | 09-08-2011 |
20130102096 | SIMULTANEOUS SILICONE DISPENSION ON COUPLER - A semiconductor device and methods of manufacturing the same are disclosed. Specifically, methods and devices for manufacturing optocouplers are disclosed. Even more specifically, methods and devices that deposit one or more encapsulant materials on optocouplers are disclosed. The encapsulant material may include silicone and the devices used to deposit the silicone may be configured to simultaneously deposit the silicone on different sides of the optocoupler, thereby reducing manufacturing steps and time. | 04-25-2013 |
20130109115 | METHOD AND JIG FOR MANUFACTURING SEMICONDUCTOR DEVICE | 05-02-2013 |
20130164867 | EMBEDDED WAFER LEVEL OPTICAL PACKAGE STRUCTURE AND MANUFACTURING METHOD - A method of forming an embedded wafer level optical package includes attaching a sensor die, PCB bars and an LED on adhesive tape laminated on a carrier, attaching a dam between two light sensitive sensors of the sensor die, encapsulating the sensor die, the PCB bars, the LED, and the dam in an encapsulation layer, debonding the carrier, grinding a top surface of the encapsulation layer, forming vias through the encapsulation layer to the sensor die and the LED, filling the vias with conductive material, metalizing the top surface of the encapsulation layer, dielectric coating of the top surface of the encapsulation layer, dielectric coating of a bottom surface of the encapsulation layer, patterning the dielectric coating of the bottom surface of the encapsulation layer, and plating the patterned dielectric coating of the bottom surface of the encapsulation layer. | 06-27-2013 |
20130330851 | MANUFACTURING METHOD OF NERVE-STIMULATING AND SIGNAL-MONITORING DEVICE - A method for manufacturing a nerve-stimulating and signal-monitoring device includes the steps of forming a first silicon oxide layer on a surface of a flexible substrate; forming a patterned doped p-type poly-silicon layer on the first silicon oxide layer; forming a second silicon oxide layer on the patterned doped p-type poly-silicon layer; forming a circuit layer on the second silicon oxide layer; forming a plurality of openings on the second silicon oxide layer; forming a gold layer on the circuit layer and on the plurality of contact pads on the patterned doped p-type poly-silicon layer; attaching a chip to the plurality of chip pads of the circuit layer by using a flip-chip bonding technology; forming a plurality of through holes on the at least one probe pad; and securely and correspondingly attaching a plurality of stimulation probes into the plurality of through holes. | 12-12-2013 |
20140038322 | Electronic Device and Method of Manufacturing an Electronic Device - An electronic device comprising at least one die stack having at least a first die (D1) comprising a first array of light emitting units (OLED) for emitting light, a second layer (D2) comprising a second array of via holes (VH) and a third die (D3) comprising a third array of light detecting units (PD) for detecting light from the first array of light emitting units (OELD) is provided. The second layer (D2) is arranged between the first die (D1) and the third die (D3). The first, second and third array are aligned such that light emitted from the first array of light emitting units (OLED) passed through the second array of via holes (VH) and is detected by the third array of light detecting units (PD). The first array of light emitting units and/or the third array of light detecting units are manufactured based on standard semiconductor manufacturing processes. | 02-06-2014 |
20140248723 | WAFER SCALE PACKAGING PLATFORM FOR TRANSCEIVERS - A wafer scale implementation of an opto-electronic transceiver assembly process utilizes a silicon wafer as an optical reference plane and platform upon which all necessary optical and electronic components are simultaneously assembled for a plurality of separate transceiver modules. In particular, a silicon wafer is utilized as a “platform” (interposer) upon which all of the components for a multiple number of transceiver modules are mounted or integrated, with the top surface of the silicon interposer used as a reference plane for defining the optical signal path between separate optical components. Indeed, by using a single silicon wafer as the platform for a large number of separate transceiver modules, one is able to use a wafer scale assembly process, as well as optical alignment and testing of these modules. | 09-04-2014 |
20140302623 | OPTICAL DEVICES AND METHODS OF FABRICATING THE SAME - Provided is an optical device. The optical device includes a substrate having a waveguide region and a mounting region, a planar lightwave circuit (PLC) waveguide including a lower-clad layer d an upper-clad layer on the waveguide region of the substrate and a platform core between the lower-clad layer and the upper-clad layer, a terrace defined by etching the lower-clad layer on the mounting region of the substrate, the terrace including an interlocking part, an optical active chip mounted on the mounting region of the substrate, the optical active chip including a chip core therein, and a chip alignment mark disposed on a mounting surface of the optical active chip. The optical active chip is aligned by interlocking between the interlocking part of the terrace and the chip alignment mark of the optical active chip and mounted on the mounting region. | 10-09-2014 |
20140315337 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes first, second, and third molded bodies. The first molded body covers a first light emitting element, a part of a lead electrically connected to the first light emitting element, a first light receiving element configured to detect a light emitted from the first light emitting element, and a part of a lead electrically connected to the first light receiving element with a first resin. The second molded body covers a second light emitting element, a part of a lead electrically connected to the second light emitting element, a second light receiving element configured to detect a light emitted from the second light emitting element, and a part of a lead electrically connected to the second light receiving element with the first resin. The third molded body molds the first and the second molded bodies as one body using a second resin. | 10-23-2014 |
20150011030 | FLEXIBLE ORGANIC LIGHT EMITTING DISPLAY AND METHOD IN AN IN-CELL STRUCTURE HAVING A TOUCH ELECTRODE ARRAY FOR MANUFACTURING THE SAME - Disclosed are an organic light emitting display that enables realization of a thin film shape and flexibility, and exhibits superior contact properties in touch pads based on an improved structure, and a method for manufacturing the same, wherein a distance between the outermost surface of the touch pad portion and the outermost surface of the dummy pad portion in the touch pad portion is smaller than the distance in a neighboring portion adjacent to the touch pad portion. | 01-08-2015 |
20150064817 | ELECTRICALLY CONTROLLED OPTICAL FUSE AND METHOD OF FABRICATION - Embodiments of the present invention provide an electrically controlled optical fuse. The optical fuse is activated electronically instead of by the light source itself. An applied voltage causes the fuse temperature to rise, which induces a transformation of a phase changing material from transparent to opaque. A gettering layer absorbs excess atoms released during the transformation. | 03-05-2015 |
20150111324 | PACKAGE STRUCTURE OF OPTICAL MODULE - A package structure of an optical module is provided and includes: a light-emitting chip and a light-admitting chip which are disposed at a light-emitting region and a light-admitting region of a substrate, respectively; two encapsulants for enclosing the light-emitting chip and the light-admitting chip, respectively, and forming hemispherical first and second lens portions above the light-emitting chip and the light-admitting chip, respectively; a cover disposed on the substrate and the encapsulants and having a light-emitting hole and a light-admitting hole, wherein the light-emitting hole and the light-admitting hole are positioned above the light-emitting chip and the light-admitting chip, respectively, and the first and second lens portions are received in the light-emitting hole and the light-admitting hole, respectively. The encapsulants of the optical module package structure can be of unequal curvature as needed to enhance light emission efficiency of the light-emitting chip and enhance reception efficiency of the light-admitting chip. | 04-23-2015 |
20150118770 | WAFER-LEVEL PACKAGES HAVING VOIDS FOR OPTO-ELECTRONIC DEVICES - A semiconductor device package is formed by mounting a semiconductor die on an adhesive tape substrate, mounting a sacrificial structure on the adhesive tape substrate, applying molding material on the adhesive tape substrate to embed the die and at least a portion of the at least one sacrificial structure; removing the adhesive tape substrate to define a package assembly, forming a redistribution layer on a surface of the package assembly, and removing sacrificial material to form a void in the molding material having a shape corresponding to a shape of the sacrificial material that was removed. | 04-30-2015 |
20150295120 | OPTICAL COUPLING DEVICE - An optical coupling device includes a first lead part, a light emitting element mounted on the first lead part, a first wire connected to the first lead part and the light emitting element, a second lead part, a light receiving element fixed to the second lead part, a second wire connected to the second lead part and the light receiving element, and an insulating film configured to allow passage of light emitted from the light emitting element. The insulating film does not make contact with the first lead part, the light emitting element, the first wire, the second lead part, the light receiving element, or the second wire. | 10-15-2015 |
20150318514 | ORGANIC LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed is an organic light emitting device and a method of manufacturing the same, wherein the organic light emitting device is decreased in its thickness, and also decreased in its radius of curvature so as to realize the flexible device, and the organic light emitting device comprising a first component including a first plurality of layers, the first plurality of layers including a thin film transistor layer deposited on a surface of a first substrate, an emitting component layer deposited on the thin film transistor layer, and a passivation layer deposited on the emitting component layer; a second component including a second plurality of layers that are deposited on a surface of a second substrate without using an adhesive; and an adhesion layer between the first component and the second component, the adhesion layer coupling together the first component and the second component. | 11-05-2015 |
20150357505 | OPTICAL PROXIMITY SENSOR AND MANUFACTURING METHOD THEREOF - The present invention is an optical proximity sensor and manufacturing method thereof. The optical proximity sensor has an optical sensing unit, an illuminating unit, multiple transparent gels and a package. The package encapsulates the optical sensing unit and the illuminating unit. The transparent gels are respectively formed on top surfaces of the optical sensing unit and the illuminating unit. The transparent gels respectively have a convex part and a recess formed in the convex part. The package has through holes communicating with the recesses of the transparent gels to form openings. In a step of injecting encapsulant gel, because the transparent gels are still plastic, the protrusions can closely attach to the transparent gels. The encapsulant gel is prevented from forming above the sensing part and the illuminating part. | 12-10-2015 |
20160020355 | METHOD FOR MANUFACTURING CIRCUIT BOARD, METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE, AND LIGHT-EMITTING DEVICE - A method for manufacturing a circuit board includes a first process, a second process, a third process, and a fourth process. The first process includes a step of providing a circuit and an electrode over a first surface of a first substrate. The second process includes a step of providing a reflective layer on the first surface side of the first substrate or a second surface side of a second substrate. The third process includes a step of attaching the first surface and the second surface to each other with a bonding layer therebetween to face each other so that the reflective layer overlaps with the electrode and the reflective layer surrounds part of the electrode. The fourth process includes a step of irradiating at least part of the reflective layer with laser light from a side opposite to the electrode. | 01-21-2016 |
20160041670 | ORGANIC LIGHT EMITTING DISPLAY AND METHOD FOR MANUFACTURING THE SAME - A organic light emitting display includes a plurality of touch pads spaced from one another in the touch pad portion, each of the touch pads including a metal pad layer and a transparent electrode pad layer connected to the metal pad layer via a plurality of first contact holes in a first insulating film, a dummy pad portion formed in the dead region of the first buffer layer, the dummy pad portion comprising a plurality of dummy pads corresponding to the touch pads, and a sealant comprising a plurality of conductive balls between the touch pad portion and the dummy pad portion. | 02-11-2016 |
20160086821 | PROCESS FOR MANUFACTURING A COMBINATION ANTI-THEFT AND TRACKING TAG - Manufacturing antennas for a dual tag by: providing a web structure having a dielectric layer between a first metal layer and a second metal layer; depositing a first resist on the first metal layer to define a radio frequency (RF) coil and a first electrode of an RF capacitor; depositing the first resist on the second metal layer to define a second electrode of the RF capacitor; depositing a second resist on the second metal layer to define connection pads for a near field antenna, wherein one of the first resist and the second resist on the second metal layer defines a far field antenna and the near field antenna; and etching the first and second metal layers to form the RF coil, the electrodes of the RF capacitor, the far field antenna, the near field antenna, and the connection pads. | 03-24-2016 |
20160099373 | WAFER LEVEL PACKAGING, OPTICAL DETECTION SENSOR AND METHOD OF FORMING SAME - An optical detection sensor functions as a proximity detection sensor that includes an optical system and a selectively transmissive structure. Electromagnetic radiation such as laser light can be emitted through a transmissive portion of the selectively transmissive structure. A reflected beam can be detected to determine the presence of an object. The sensor is formed by encapsulating the transmissive structure in a first encapsulant body and encapsulating the optical system in a second encapsulant body. The first and second encapsulant bodies are then joined together. In a wafer scale assembling the structure resulting from the joined encapsulant bodies is diced to form optical detection sensors. | 04-07-2016 |