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MAKING DEVICE OR CIRCUIT EMISSIVE OF NONELECTRICAL SIGNAL

Subclass of:

438 - Semiconductor device manufacturing: process

Patent class list (only not empty are listed)

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Class / Patent application numberDescriptionNumber of patent applications / Date published
438029000 Including integrally formed optical element (e.g., reflective layer, luminescent material, contoured surface, etc.) 540
438026000 Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor 401
438034000 Making emissive array 271
438046000 Compound semiconductor 253
438033000 Substrate dicing 81
438023000 Having diverse electrical device 69
438039000 Mesa formation 29
438042000 Groove formation 23
438045000 Dopant introduction into semiconductor region 21
438038000 Passivating of surface 11
438037000 Graded composition 7
438036000 Ordered or disordered 1
20110223701GROUP III NITRIDE SEMICONDUCTOR DEVICE, EPITAXIAL SUBSTRATE, AND METHOD OF FABRICATING GROUP III NITRIDE SEMICONDUCTOR DEVICE - A group III nitride semiconductor device having a gallium nitride based semiconductor film with an excellent surface morphology is provided. A group III nitride optical semiconductor device 09-15-2011
Entries
DocumentTitleDate
20110177630COMPLEX SALTS - Disclosed is a salt of an organometallic complex cation and an organometallic complex anion, wherein the cation as well as the anion consists of a central metal atom M of atomic weight greater than 40 associated to 2 or more ligands, at least one ligand comprising a cyclic organic moiety with a carbon atom bonding to M, and at least one ligand comprising a cyclic organic moiety with a nitrogen atom bonding to M. The novel salts may be used as conductive and/or light emitting components in electronic devices. Color emission may be chosen by selecting anion(s) and cation(s) of suitable emission characteristics.07-21-2011
20120178190 Arrangement for Holding a Substrate in a Material Deposition Apparatus - An arrangement (07-12-2012
20100330712THIN FILM DEPOSITION APPARATUS AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DEVICE BY USING THE SAME - A thin film deposition apparatus and a method of manufacturing an organic light emitting device (OLED) using the thin film deposition apparatus. The thin film deposition apparatus includes a deposition source; a first nozzle in which a plurality of first slits are formed in one direction; a second nozzle in which a plurality of second slits are formed in the one direction; a second nozzle frame combined with the second nozzle to support the second nozzle; a first barrier wall assembly including a plurality of first barrier walls disposed in the one direction to form a space between the first nozzle and the second nozzle; and a second barrier wall assembly having a plurality of second barrier walls disposed in the one direction and a second barrier wall frame to support the second barrier walls, the second barrier wall assembly disposed at one side of the first barrier wall assembly, wherein the second barrier walls are mounted on the second barrier wall frame in the one direction and the second barrier walls slide on the second barrier wall frame.12-30-2010
20090124030Nitride-Based Light-Emitting Device and Method of Manufacturing the Same - A nitride-based light-emitting device and a method of manufacturing the same. The light-emitting device includes a substrate, and an n-cladding layer, an active layer, a p-cladding layer, a grid cell layer and an ohmic contact layer sequentially formed on the substrate. The grid cell layer has separated, conducting particle type cells with a size of less than 30 micrometers buried in the ohmic contact layer. The nitride-based light-emitting device and the method of manufacturing the same improve the characteristics of ohmic contact on the p-cladding layer, thereby increasing luminous efficiency and life span of the device while simplifying a manufacturing process by omitting an activation process after wafer growth.05-14-2009
20130052762METHOD OF FORMING AN ARRAY OF HIGH ASPECT RATIO SEMICONDUCTOR NANOSTRUCTURES - A new method for forming an array of high aspect ratio semiconductor nanostructures entails positioning a surface of a stamp comprising a solid electrolyte in opposition to a conductive film disposed on a semiconductor substrate. The surface of the stamp includes a pattern of relief features in contact with the conductive film so as to define a film-stamp interface. A flux of metal ions is generated across the film-stamp interface, and a pattern of recessed features complementary to the pattern of relief features is created in the conductive film. The recessed features extend through an entire thickness of the conductive film to expose the underlying semiconductor substrate and define a conductive pattern on the substrate. The stamp is removed, and material immediately below the conductive pattern is selectively removed from the substrate. Features are formed in the semiconductor substrate having a length-to-width aspect ratio of at least about 5:1.02-28-2013
20090305442LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME - The light emitting device comprises a substrate 12-10-2009
20130071959OVJP PATTERNING OF ELECTRONIC DEVICES - A method for forming an electronic device such as a passive color OLED display. Bottom electrodes are patterned onto a substrate in rows. Raised posts formed by photoresist are patterned into columns oriented orthogonally to the bottom row electrodes. One or more organic layers, such as R, G, B organic emissive layers are patterned over the raised posts and bottom electrodes using organic vapor jet printing (OVJP). An upper electrode layer is applied over the entire device and forms electrically isolated columnar electrodes due to discontinuities in the upper electrode layer created by the raised columnar posts. This permits patterning of the upper electrodes over the organic layers without using photolithography. A device formed by this method is also described.03-21-2013
20110014729DONOR FILM FOR LASER INDUCED THERMAL IMAGING METHOD, LIGHT EMITTING DEVICE USING THE SAME, AND METHOD OF MANUFACTURING LIGHT EMITTING DEVICE - A donor film for a laser induced thermal imaging method capable of improving the optical efficiency of an emission layer, a light emitting device using the same, and a method of manufacturing the light emitting device are provided. The donor film for a laser induced thermal imaging method includes a base substrate, a light to heat conversion layer (LTHC) provided on the base substrate and having a pattern with a predetermined step difference, and a transfer layer provided on the LTHC. It is possible to improve the optical efficiency of the emission layer by patterning the transfer layer using the LTHC having the pattern with a predetermined step difference.01-20-2011
20110014728ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREOF - An object of the invention is to provide an electronic device which can be easily manufactured using a wet method. One of electronic devices according to the invention has a first layer and a second layer. The first layer contains a first compound including a conjugated double bond. Here, the first compound preferably has a molecular weight of 100 to 1000. The second layer contains a second compound having a cyclic structure which is formed by an addition reaction between two molecules of the first compound. Here, a light emitting element or an element such as a transistor can be given as the electronic device.01-20-2011
20090233389METHOD FOR MANUFACTURING THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING DISPLAY DEVICE - A method for manufacturing a thin film transistor and a display device using a small number of masks is provided. A conductive film is formed, a thin-film stack body having a pattern is formed over the conductive film, an opening portion is formed in the thin-film stack body so as to reach the conductive film, a gate electrode layer is formed by processing the conductive film using side-etching, and an insulating layer, a semiconductor layer, and a source and drain electrode layer are formed over the gate electrode layer, whereby a thin film transistor is manufactured. By provision of the opening portion, controllability of etching is improved.09-17-2009
20090233388Manufacturing method of electro line for liquid crystal display device - A manufacturing method of an electro line for a liquid crystal display device includes depositing a barrier layer made of a conducting material on a substrate, depositing a copper layer (Cu) on the barrier layer, wet-etching the Cu layer using a first etchant, and dry-etching the barrier layer using a second etchant using the wet-etched Cu layer as an etch mask.09-17-2009
20090233387LINEAR PLASMA SOURCE FOR DYNAMIC (MOVING SUBSTRATE) PLASMA PROCESSING - The present invention generally relates to a method and apparatus for depositing a layer onto a substrate as the substrate is moving through the processing chamber. The substrate may move along a roll to roll system. A roll to roll system is a system where a substrate may be unwound from a first roll so that the substrate may undergo processing and then re-wound onto a second roll after the processing. As the substrate moves through the processing chamber, a plasma source may produce a plasma. An electrical bias applied to the substrate may draw the plasma to the substrate and hence, permit deposition of material onto the substrate as the substrate moves through the chamber.09-17-2009
20100087019ORGANIC ELECTROLUMINESCENT DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic electroluminescent device (OELD) and a method of manufacturing the OELD are provided. The OELD includes a substrate, an anode electrode stacked on the substrate, an organic light emitting layer that is stacked on the anode electrode and has a plurality of protrusions on the organic light emitting layer, and a cathode electrode that covers the protrusions formed on the organic light emitting layer and is formed of a metal.04-08-2010
20130164866SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting element includes a conductive substrate, a bonding portion, an intermediate metal film, a first electrode, a semiconductor stacked body and a second electrode. The bonding portion is provided on the support substrate and including a first metal film. The intermediate metal film is provided on the bonding portion and having a larger linear expansion coefficient than the first metal film. The first electrode is provided on the intermediate metal film and includes a second metal film having a larger linear expansion coefficient than the intermediate metal film. The semiconductor stacked body is provided on the first electrode and including a light emitting portion. The second electrode is provided on the semiconductor stacked body.06-27-2013
20120107972LASER DIODE AND METHOD OF MANUFACTURING THE SAME - A laser diode capable of independently driving each ridge section, and inhibiting rotation of a polarization angle resulting from a stress applied to the ridge section without lowering reliability and a method of manufacturing the same are provided. A laser diode includes: three or more strip-like ridge sections in parallel with each other with a strip-like trench in between, including at least a lower cladding layer, an active layer, and an upper cladding layer in this order; an upper electrode on a top face of each ridge section, being electrically connected to the upper cladding layer; a wiring layer electrically connected to the upper electrode, in the air at least over the trench; and a pad electrode in a region different from regions of both the ridge section and the trench, being electrically connected to the upper electrode through the wiring layer.05-03-2012
20110143464Methods and Apparatus for Control of Hydrothermal Nanowire Synthesis - In exemplary implementations of this invention, hydrothermal synthesis of zinc oxide nanowires is morphologically controlled. Metal complex ions are used to suppress growth in a face-selective manner, by electrostatic crystal growth inhibition. This permits the aspect ratio (height/diameter) of the nanowires to be dynamically tuned over a wide range, from needle-like nanowires that are efficient field emitters to flattened nanowires with a platelet-like shape. The nanowire synthesis is all inorganic and occurs at low temperatures (e.g., <=60° C.). The growth inhibition may be predictively modeled, using speciation plots and treating non-zinc complex ions as ligands. Microfluidic channels may be used for the synthesis, with different solutions flowing down different channels, permitting nanowires with different properties to be synthesized in parallel. This invention may be used to produce field emission devices and nanowire-embedded AC electroluminescent devices, and for in-situ fabrication of spatially complex integrated devices in a polymeric microfluidic system.06-16-2011
20120190139PREPARATION METHOD FOR REDUCED GRAPHENE OXIDE USING SULFONYL HYDRAZIDE-BASED REDUCING AGENT AND OPTOELECTRONIC DEVICES THEREOF - A method for fabricating a graphene thin film by reducing graphene oxide and a method for fabricating an optoelectronic device using the same are provided. The method for fabricating a graphene thin film comprises: (a) preparing graphene oxide; (b) preparing graphene through reducing the graphene oxide by a sulfonyl hydrazide-based reducing agent; (c) preparing a graphene dispersed solution by dispersing the graphene into an organic solvent; and (d) fabricating a graphene thin film by applying the graphene dispersed solution. The sulfonyl hydrazide-based reducing agent may be a compound having a sulfonyl hydrazide substituent of Chemical Formula 1 in the present disclosure in which A may be any one in Chemical Formula 2 in the present disclosure.07-26-2012
20100120180LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - In a liquid crystal display device of an IPS system, to realize reduction of manufacturing cost and improvement of yield by decreasing the number of steps for manufacturing a TFT. A channel etch type bottom gate TFT structure, where patterning of a source region and a drain region and patterning of a source wiring and a pixel electrode are carried out by the same photomask.05-13-2010
20090215209Methods of depositing material, methods of making a device, and systems and articles for use in depositing material - Methods for depositing material and/or nanomaterial are disclosed. Also disclosed are methods of making devices including nanomaterials, systems useful for depositing materials and/or nanomaterials, surface treated articles for depositing material and/or nanomaterial onto a substrate, and surface treated transfer surfaces.08-27-2009
20100099205METHOD OF MANUFACTURING LIQUID CRYSTAL DISPLAY DEVICE - A method of manufacturing a liquid crystal display device is provided which includes ashing first and second photoresist patterns, whereby a copper oxide film is formed at portions of a data line and a source-drain pattern exposed between the ashed first and second photoresist patterns and between the ashed first and second portions of the first photoresist pattern; deoxidizing or removing the copper oxide film; performing a plasma treatment to change the exposed portions of the data line and the source-drain pattern into a copper compound; removing the copper compound using a copper compound removing solution to form source and drain electrodes below the ashed first and second portions, respectively, wherein the copper compound removing solution substantially has no reaction with the copper group material; dry-etching a portion of an ohmic contact layer between the source and drain electrodes using the source and drain electrodes as an etching mask, the ohmic contact layer formed by patterning the impurity-doped amorphous silicon layer.04-22-2010
20120295372METHOD OF MASKLESS MANUFACTURING OF OLED DEVICES - By the invention it is proposed a method of manufacturing of an OLED-device, comprising the steps of providing a carrier substrate, depositing a first electrode material layer on said carrier substrate, forming electrically separated areas within the deposited first electrode material layer, depositing a layer of an organic optoelectronic active material (11-22-2012
20090170225METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - A method for manufacturing a semiconductor light emitting device includes forming an insulating film on a semiconductor substrate, the insulating film having an opening therein, forming a Pd electrode in the opening and on the insulating film, and removing the portion of the Pd electrode on the insulating film by the application of a physical force to the portion, while leaving the Pd electrode in the opening.07-02-2009
20090280587METHOD OF TREATING SODA-LIME GLASS SUBSTRATE AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE USING THE SAME - A method of treating a soda-lime glass (SLG) substrate includes cleaning the SLG substrate using an alkali cleaning solution and cleaning the cleaned SLG substrate using a plasma process. The SLG substrate is cleaned using the alkali cleaning solution to remove particles adhered to the SLG substrate. Thus, defects due to the adhering particles may be reduced.11-12-2009
20090280586Methods for depositing nanomaterial, methods for fabricating a device, and methods for fabricating an array of devices - A method comprising depositing an ink comprising a nanomaterial and a liquid vehicle from a micro-dispenser onto a layer of a device is disclosed. A method comprising depositing an ink comprising a nanomaterial and a liquid vehicle from a micro-dispenser onto a material capable of transporting charge in a predetermined arrangement is also disclosed. Methods for fabricating devices including nanomaterials are also disclosed. In certain preferred embodiments, the nanomaterial comprises semiconductor nanocrystals. In certain preferred embodiments, a micro-dispenser comprises an inkjet printhead.11-12-2009
20090042325SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - In a semiconductor light emitting device, a semiconductor light emitting element has a light extracted surface on which a plurality of convex structures is formed. The convex structures each have a conical mesa portion constituting a refractive index gradient structure, a cylindrical portion constituting a diffraction grating structure, and a conical portion constituting a refractive index gradient structure. The mesa portion, cylindrical portion, and conical portion are arranged in this order from the light extracted surface. The period between the convex structures is longer than 1/(the refractive index of an external medium+the refractive index of the convex structures) of an emission wavelength and equal to or shorter than the emission wavelength. The circle-equivalent average diameter of the cylindrical portion is ⅓ to 9/10 of that of the bottom of the mesa portion.02-12-2009
20110171760Method for manufacturing thin film transistor and display device - A method for manufacturing a thin film transistor includes: forming a source electrode and a drain electrode on a substrate by depositing a metal layer on the substrate at a first temperature and etching the metal layer; forming a protective layer on the source and drain electrodes; and performing a heat treatment on the protective layer at a second temperature higher than the first temperature.07-14-2011
20100136720MANUFACTURING METHOD OF PIXEL STRUCTURE - A method of manufacturing the pixel structure is provided. The method includes forming a gate, a scan line connected to the gate, and at least one auxiliary pattern on a substrate. An insulating layer, a semiconductor layer, an ohmic contact layer, and a photoresist layer are formed in sequence. Afterwards, a single exposure and development is performed on the photoresist layer to form a first portion and a second portion. Next, the ohmic contact layer and the semiconductor layer which are not covered by the photoresist layer are removed to expose a part of the insulating layer. Next, the second portion of the photoresist layer is removed. Subsequently, a part of the thickness of the semiconductor layer not covered by the first portion is removed and the exposed insulating layer is removed, so as to faun a channel layer and an insulating layer.06-03-2010
20090029493Methods of Forming Light Emitting Devices with Active Layers that Extend Into Opened Pits - Light emitting devices include an active region comprising a plurality of layers and a pit opening region on which the active region is disposed. The pit opening region is configured to expand a size of openings of a plurality of pits to a size sufficient for the plurality of layers of the active region to extend into the pits. In some embodiments, the active region comprises a plurality of quantum wells. The pit opening region may comprise a superlattice structure. The pits may surround their corresponding dislocations and the plurality of layers may extend to the respective dislocations. At least one of the pits of the plurality of pits may originate in a layer disposed between the pit opening layer and a substrate on which the pit opening layer is provided. The active region may be a Group III nitride based active region. Methods of fabricating such devices are also provided.01-29-2009
20090029492Method of making light emitting diode - A method of making a light emitting diode (LED) is disclosed. The LED of the present invention comprises a semiconductor layer of a first polarity, an active layer, and a semiconductor layer of a second polarity stacked from bottom to up, wherein a stacked structure at least composed of the active layer and the semiconductor layer of the second polarity have a side with a wave-shape border in a top view of the LED and/or at least one valley, thereby increasing the efficiency of emitting the light to the outside of the LED.01-29-2009
20090130786Organic electroluminescent display device and method of fabricating the same - An organic electroluminescent display device includes an array element layer formed on a substrate, the array element layer including a switching element, a driving element, a first electrode, an organic luminescent layer, and a second electrode, and a ground line formed on the substrate, the ground line directly contacting the second electrode.05-21-2009
20090137071High Reliability Surveillance and/or Identification Tag/Devices and Methods of Making and Using the Same - The present invention relates to methods of making capacitors for use in surveillance/identification tags or devices, and methods of using such surveillance/identification devices. The capacitors manufactured according to the methods of the present invention and used in the surveillance/identification devices described herein comprise printed conductive and dielectric layers. The methods and devices of the present invention improve the manufacturing tolerances associated with conventional metal-plastic-metal capacitor, as well as the deactivation reliability of the capacitor used in a surveillance/identification tag or device.05-28-2009
20090186431LIGHT-EMITTING DEVICE AND ITS MANUFACTURING METHOD - In a light-emitting device and its manufacturing method, mounting by batch process with surface-mount technology, high light extraction efficiency, and low manufacturing cost are realized. The light-emitting device comprises semiconductor layers of p-type and n-type nitride semiconductor, semiconductor-surface-electrodes to apply currents into each of the semiconductor layers, an insulating layer which holds the semiconductor layers, and mount-surface-electrodes. The semiconductor layers has a non-deposited area where the other semiconductor layer is not deposited. The insulating layer has VIA which electrically connect the mount-surface-electrodes and the semiconductor-surface-electrodes. In the manufacturing process, firstly, semiconductor layers and semiconductor-surface-electrodes are deposited on the transparent crystal substrate, and by using build-up process, insulating layer and the mount-surface-electrodes are formed, and secondly, VIA are formed, and finally, the transparent crystal substrate is separated to get light-emitting device. Light can be extracted directly and efficiently from the semiconductor layers. With the mount-surface-electrodes, light-emitting device can be mounted by using surface mount technology.07-23-2009
20090325331METHOD FOR MANUFACTURING PIXEL STRUCTURE - A method for manufacturing a pixel structure is provided. First, a gate and a gate insulating layer are sequentially formed on the substrate. A channel layer and a second metal layer are sequentially formed on the gate insulating layer. The second metal layer is patterned to form a source and a drain by using a patterned photoresist layer formed thereon, wherein the source and the drain are disposed on a portion of the channel layer. The gate, the channel, the source and the drain form a thin film transistor. A passivation layer is formed on the patterned photoresist layer, the gate insulating layer and the thin film transistor. Then, the patterned photoresist layer is removed, such that the passivation layer thereon is removed simultaneously to form a patterned passivation layer and the drain is exposed. A pixel electrode is formed on the patterned passivation layer and the drain.12-31-2009
20100248402SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, DELAMINATION METHOD, AND TRANSFERRING METHOD - A technique for forming a TFT element over a substrate having flexibility typified by a flexible plastic film is tested. When a structure in which a light-resistant layer or a reflective layer is employed to prevent the damage to the delamination layer, it is difficult to fabricate a transmissive liquid crystal display device or a light emitting device which emits light downward.09-30-2010
20090117675Method for Producing Group 3-5 Nitride Semiconductor and Method for Producing Light-Emitting Device - The present invention provides a method for producing a group 3-5 nitride semiconductor and a method for producing a light emitting device. The method for producing a group 3-5 nitride semiconductor, comprises the steps of (i), (ii), (iii) and (iv) in this order: (i) placing inorganic particles on a substrate, (ii) growing a semiconductor layer, and (iii) separating the substrate and the semiconductor layer by irradiating the interface between the substrate and the semiconductor layer with light.05-07-2009
20090246896METHOD AND APPARATUS FOR IMPROVED PRINTED CATHODES FOR ORGANIC ELECTRONIC DEVICES - Rapid thermal processing of printed electrodes and cathodes for organic electronic devices and light-emitting polymer devices (LEPDs) to prevent detrimental cathode ink/underlying layer interactions is described herein. The ink layer printed cathode can be thinned during fabrication using high mesh count screens, calendered mesh screens, high squeegee pressures, high hardness squeegees, high squeegee angles and combinations thereof. Alone, or in combination with, a thinned ink layer, the printed cathode can be cured using reduced time hot plate processing, infrared processing, heated gas flow processing, or combinations thereof.10-01-2009
20120196391METHOD FOR FABRICATING SEMICONDUCTOR LIGHTING CHIP - A method for fabricating a semiconductor lighting chip includes steps: providing a substrate with an epitaxial layer, the epitaxial layer comprising a first semiconductor layer, a second semiconductor layer and an active layer located between the first semiconductor layer and the second semiconductor layer; dipping the epitaxial layer into an electrolyte to etch surfaces of the epitaxial layer and form a number of holes on the epitaxial layer; and forming electrodes on the epitaxial layer.08-02-2012
20130217157METHOD FOR FABRICATING SEMICONDUCTOR LASER - A method for fabricating a semiconductor laser includes: sequentially forming a cladding layer of a first conductivity type, an active layer, a cladding layer of a second conductivity type, and a contact layer of the second conductivity type on a semiconductor substrate; forming a promotion film which contacts the contact layer only in a window region proximate an end plane of the semiconductor laser and absorbs group-III atoms from the contact layer to promote generation of group-III vacancies; implanting ions into the contact layer in the window region to damage the contact layer in the window region; and after forming the promotion film and implanting the ions, heat treating so that the group-III vacancies are diffused and the active layer is disordered in the window region and forms a window structure.08-22-2013
20130217158DEPOSITING DEVICE AND METHOD FOR MANUFACTURING ORGANIC LIGHT EMITTING DIODE DISPLAY USING THE SAME - A deposition device includes a deposition source for discharging a deposition material to be deposited on a substrate, an angle control member at least partly in a discharging path of the deposition material for controlling a discharging angle of the deposition material, and an angle control member driver coupled to the angle control member, the angle control member driver for moving the angle control member in a discharging direction of the deposition material to control the discharging angle.08-22-2013
20100136719THIN FILM TRANSISTOR SUBSTRATE HAVING ELECTRODE LAYERS THAT ARE FORMED ON INSULATING LAYER TO COVER COMMON VOLTAGE LINE AND GROUNDING LINE - According to an embodiment, there is provided a fabricating method for a thin film transistor substrate divided into a display area displaying images and a non-display area beside the display area, the fabricating method comprising: forming a gate wire in the display area, a common voltage line for a MPS (mass production system) test in the non-display area, and a grounding line for the MPS test in the non-display area with same material at the same time; forming a gate insulating layer covering the gate wire and a first insulating layer covering the common voltage line for the MPS test and the grounding line for the MPS test with same material at the same time; forming a data wire crossing the gate wire and defining a pixel area in the display area; and forming a pixel electrode in the pixel area and an electrode layer on the first insulating layer corresponding to the common voltage line for the MPS test and the grounding line for the MPS test with same material at the same time.06-03-2010
20120129280Method of Manufacturing Light Emitting Device - A method of manufacturing a light emitting device is provided which requires low cost, is easy, and has high throughput. The method of manufacturing a light emitting device is characterized in that: a solution containing a light emitting material is ejected to an anode or cathode under reduced pressure; a solvent in the solution is volatilized until the solution reaches the anode or cathode; and the remaining light emitting material is deposited on the anode or cathode to form a light emitting layer. A burning step for reduction in film thickness is not required after the solution application. Therefore, the manufacturing method, which requires low cost and is easy but which has high throughput, can be provided.05-24-2012
20100136721NITRIDE-BASED WHITE LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A light emitting device includes an n-type cladding layer. a p-type cladding layer. an active layer interposed between the n-type cladding layer and the p-type cladding layer and an ohmic contact layer contacting the p-type cladding layer or the n-type cladding layer. The ohmic contact layer includes a first film that includes a transparent conductive zinc oxide doped with a rare earth metal and including a one-dimensional nano structure. The one-dimensional nano structure is one of a nano-column, a nano rod and a nano wire.06-03-2010
20120196392PIXEL DESIGNS OF IMPROVING THE APERTURE RATIO IN AN LCD - In one aspect of this invention, a pixel structure includes a scan line formed on a substrate and a data line formed over the substrate defining a pixel area, a switch formed inside the pixel area on the substrate, a shielding electrode having a first portion and a second portion extending from the first portion, and formed over the scan line, the data line and the switch, where the first portion is overlapped with the switch and the second portion is overlapped with the data line, and a pixel electrode having a first portion and a second portion extending from the first portion, and formed over the shielding electrode in the pixel area, where the first portion is overlapped with the first portion of the shielding electrode so as to define a storage capacitor therebetween and the second portion has no overlapping with the second portion of the shielding electrode.08-02-2012
20090075410LIGHT SENSOR LOCATED ABOVE AN INTEGRATED CIRCUIT - A light sensor located above an integrated circuit including a lower electrode, a heavily-doped amorphous silicon layer of a first conductivity type, and a lightly-doped amorphous silicon layer of a second conductivity type. The lightly-doped amorphous silicon layer rests on a planar surface at least above and in the vicinity of the lower electrode.03-19-2009
20090075409FABRICATION APPARATUS AND FABRICATION METHOD OF SEMICONDUCTOR DEVICE PRODUCED BY HEATING SUBSTRATE - A fabrication apparatus and fabrication method of a semiconductor device are provided, allowing the temperature distribution of a substrate to be rendered uniform. The fabrication apparatus for a semiconductor device includes a susceptor holding the substrate, a heater arranged at a back side of the susceptor, a support member located between the substrate and susceptor, including a support portion, and a spacer located between the susceptor and support member. The spacer has an opening formed corresponding to the site where said support portion is located, at an opposite face side of the support member.03-19-2009
20090075408METHOD FOR MANUFACTURING SOI SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A nitrogen-containing layer is formed over a semiconductor substrate; ions are added at a predetermined depth in the semiconductor substrate through the nitrogen-containing layer to form a separation layer; an insulating layer is formed over the nitrogen-containing layer; a surface of the insulating layer and a surface of a base substrate are bonded to each other; the semiconductor substrate is cleaved with the separation layer as a cleavage plane, so that single crystal semiconductor layer is formed over the base substrate with the insulating layer interposed therebetween. The ions are added by irradiating the semiconductor layer with an ion beam in a rectangular shape or a linear shape while moving the semiconductor substrate relative to the ion beam in a short side direction of the ion beam.03-19-2009
20090280588METHOD OF FORMING AN ELECTRONIC DEVICE INCLUDING REMOVING A DIFFERENTIAL ETCH LAYER - A method of forming an electronic device can include forming a metallic layer over a side of a workpiece including a substrate, a differential etch layer, and a semiconductor layer. The differential etch layer may lie between the substrate and the semiconductor layer, and the semiconductor layer may lie along the side of the workpiece. The process can further include selectively removing at least a majority of the differential etch layer from between the substrate and the semiconductor layer, and separating the semiconductor layer and the metallic layer from the substrate. The selective removal can be performed using a wet etching, dry etching, or electrochemical technique. In a particular embodiment, the same plating bath may be used for plating the metallic layer and selectively removing the differential etch layer.11-12-2009
20090142862LUMINESCENT SEMI-CONDUCTIVE POLYMER MATERIAL, METHOD OF PREPARING THE SAME AND ORGANIC LIGHT EMITTING ELEMENT HAVING THE SAME - The present invention is related to a luminescent material generated by polymerization of a pyrromethene complex by glow discharge. The polymer material of the present invention exhibits semi-conductive properties and has a luminescence maximum in a spectrum region in the range of about 540 nm to about 585 nm with a half-width of the luminescence band in the range of about 55 nm to about 75 nm, a quantum yield of photoluminescence in the range of about 0.6 to about 0.8, and an electric conductivity at a temperature of about 20° C. in the range of about 06-04-2009
20090148968Organic electroluminescence device and method for manufacturing same - An organic electroluminescence device includes a substrate; first electrodes arranged on the luminous portion of the substrate in a single direction; an insulating layer pattern formed on the first electrodes and the substrate in a lattice shape to define plural pixel openings on the first electrodes; partition layers formed on the insulating layer pattern, the partition layers intersecting the first electrodes perpendicularly; organic thin film layer formed on the pixel openings; second electrodes formed on the organic thin film layer to be perpendicular to the first electrodes; first bus electrode patterns formed on the pad portion of the substrate to be connected with the first electrodes; second bus electrode patterns formed on the pad portion of the substrate to be connected with the second electrodes and including a material for forming the second electrodes; and barrier films formed between the second bus electrode patterns.06-11-2009
20110008918METHODS OF LOW LOSS ELECTRODE STRUCTURES FOR LEDS - Aspects concerning a method of making electrical contact to a region of semiconductor in which one or more LEDs are formed include that a dielectric region can be formed on a p region of the semiconductor, and that a metallic electrode can be formed on (at least partially on) the region of dielectric material. A transparent layer of a material such as Indium Tin Oxide can be used to make ohmic contact between the semiconductor and the metallic electrode, as the metallic electrode is separated from physical contact with the semiconductor by one or more of the dielectric material and the transparent ohmic contact layer (e.g., ITO layer). The dielectric material can enhance total internal reflection of light and reduce an amount of light that is absorbed by the metallic electrode.01-13-2011
20100221852Method for fabricating light emitting diode - A method of fabricating a light emitting diode includes the following steps. A substrate is provided and a first semiconductor layer, an active layer, and a second semiconductor layer are placed on the substrate. A carbon nanotube structure is provided and the carbon nanotube structure is lie on the second semiconductor layer. A first electrode is formed on the carbon nanotube structure. A portion of the first semiconductor layer is exposed and a second electrode is formed on the exposed portion of the first semiconductor layer to obtain the light emitting diode.09-02-2010
20090311809THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - To provide a manufacturing method of a thin film transistor and a display device with fewer masks than a conventional method. A thin film transistor is manufactured by including the steps of: forming a first conductive film, an insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film to be stacked; forming a resist mask including three regions with different thicknesses; performing first etching to form a thin-film stack body; performing second etching in which side-etching is performed on the thin-film stack body to form a gate electrode layer; and recessing the resist mask to form a semiconductor layer and a source and drain electrode layer. A resist mask including three regions with different thicknesses can be formed using a four-tone photomask, for example.12-17-2009
20120244650Air-Stable Ink for Scalable, High-Throughput Layer Deposition - A method for producing and depositing air-stable, easily decomposable, vulcanized ink on any of a wide range of substrates is disclosed. The ink enables high-volume production of optoelectronic and/or electronic devices using scalable production methods, such as roll-to-roll transfer, fast rolling processes, and the like.09-27-2012
20100055810MASK FOR THIN FILM DEPOSITION AND METHOD OF MANUFACTURING OLED USING THE SAME - A mask for thin film deposition used in forming an organic thin film or a conductive layer in an organic light emitting device is disclosed. In one embodiment, the mask includes i) a base member, ii) a plurality of slits configured to penetrate through the base member, wherein the plurality of slits have a predetermined length and extend in a first direction, wherein the plurality of slits comprise an outermost slit positioned in an outermost in a second direction having a predetermined angle with respect to the first direction, and wherein the outermost slit comprises two sub-slits separated from each other and iii) a rib supporting part formed between and contacting the two sub-slits, wherein the rib supporting part extends from a rib which is adjacent to the outermost slit.03-04-2010
20090215208Composition including material, methods of depositing material, articles including same and systems for depositing material - Methods for depositing nanomaterial onto a substrate are disclosed. Also disclosed are compositions useful for depositing nanomaterial, methods of making devices including nanomaterials, and a system and devices useful for depositing nanomaterials.08-27-2009
20110045617THIN FILM DEPOSITION APPARATUS AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY DEVICE BY USING THE SAME - A thin film deposition apparatus and an organic light-emitting display device by using the same. The thin film deposition apparatus includes an electrostatic chuck, an a plurality of chambers; at least one thin film deposition assembly; a carrier; a first power source plug; and a second power source plug. The electrostatic chuck includes a body having a supporting surface that contacts a substrate to support the substrate, wherein the substrate is a deposition target; an electrode embedded into the body and applying an electrostatic force to the supporting surface; and a plurality of power source holes formed to expose the electrode and formed at different locations on the body. The plurality of chambers are maintained in a vacuum state. The at least one thin film deposition assembly is located in at least one of the plurality of chambers, is separated from the substrate by a predetermined distance, and is used to form a thin film on the substrate supported by the electrostatic chuck. The carrier is used to move the electrostatic chuck to pass through the plurality of chambers. The first power source plug is installed to be attachable to and detachable from one of the power source holes in order to supply power to the electrode. The first power source plug is installed at an upstream of a path in which the electrostatic chuck is moved by the carrier. The second power source plug is installed to be attachable to and detachable from another of the power source holes in order to supply power to the electrode. The second power source plug is installed in the path to be downstream to the first power source plug with respect to the path.02-24-2011
20110033959LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME - A liquid crystal display (LCD) device having an array substrate with a top gate type TFT includes a first transparent metal layer deposited to enhance the adhesion between a data metal layer and an insulating substrate before a data metal deposition, and a second transparent metal layer deposited to enhance the adhesion between a gate metal layer and an insulating substrate before a gate metal deposition. The LCD device having the array substrate with a top gate type TFT can be fabricated with a reduced number of masking or sputtering processes, thereby reducing the fabrication time of the LCD device and increasing the yield of the LCD device.02-10-2011
20090023233METHOD OF MANUFACTURING DISPERSION TYPE AC INORGANIC ELECTROLUMINESCENT DEVICE AND DISPERSION TYPE AC INORGANIC ELECTROLUMINESCENT DEVICE MANUFACTURED THEREBY - Disclosed herein is a method of preparing a low resistance metal line, is a method of manufacturing a dispersion type AC inorganic electroluminescent device and a dispersion type AC inorganic electroluminescent device manufactured thereby, in which a light-emitting layer and a dielectric layer between a lower electrode and an upper electrode are simultaneously formed through a single process using spin coating, thereby simplifying the overall manufacturing process and decreasing the manufacturing cost, and furthermore, the contact interface between the light-emitting layer and the dielectric layer is increased, therefore increasing the brightness of the device.01-22-2009
20100015737SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THEREOF, AND METHOD OF MANUFACTURING BASE MATERIAL - It is an object of the invention to provide a lightweight semiconductor device having a highly reliable sealing structure which can prevent ingress of impurities such as moisture that deteriorate element characteristics, and a method of manufacturing thereof. A protective film having superior gas barrier properties (which is a protective film that is likely to damage an element if the protective film is formed on the element directly) is previously formed on a heat-resistant substrate other than a substrate with the element formed thereon. The protective film is peeled off from the heat-resistant substrate, and transferred over the substrate with the element formed thereon so as to seal the element.01-21-2010
20090170224PROCESS FOR FABRICATION OF NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - The present invention relates to a process for fabrication of a nitride semiconductor light emitting device comprising a substrate, a nitride semiconductor layer on the substrate and electrodes on the nitride semiconductor, the process for fabrication of a nitride semiconductor light emitting device being characterized by device working by laser, followed by etching treatment and then electrode formation.07-02-2009
20090111198METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A manufacturing method of the present invention includes a process using a first multi-tone mask, in which a first conductive layer in which a transparent conductive layer and a metal layer are stacked over a substrate, a gate electrode formed of a first conductive layer, and a pixel electrode formed of a single layer of the transparent conductive layer are formed, a process using a second multi-tone mask, in which a contact hole to the pixel electrode, and an island of an i-type semiconductor layer and an n04-30-2009
20080268558Semiconductor Light Emitting Element and Method for Manufacturing the Same - A high-luminance light emitting element is manufactured by a method comprising: forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first area, the light emitting layer emitting light of a wavelength λ permitted to pass through the GaP substrate; forming a plurality of side surfaces on the GaP substrate to be respectively aslant by substantially the same angle to become narrower toward the second surface; and forming a plurality of depressions and protrusions as high as 0.1λ to 3λ on the side surfaces.10-30-2008
20080254555PATTERNING METHOD FOR LIGHT-EMITTING DEVICES - A method of patterning a substrate that includes:10-16-2008
20110053296THIN FILM DEPOSITION APPARATUS AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY DEVICE BY USING THE SAME - A thin film deposition apparatus and a method of manufacturing an organic light-emitting display device by using the same, and more particularly, to a thin film deposition apparatus that can remove a deposition material deposited on a patterning slit sheet without performing an additional cleaning process, and a method of manufacturing an organic light-emitting display device by using the thin film deposition apparatus.03-03-2011
20100323464LIQUID COMPOSITIONS FOR INKJET PRINTING OF ORGANIC LAYERS OR OTHER USES - A method of forming an organic layer for an organic electronic device (e.g., an OLED) by using a liquid composition comprising a small molecule organic semiconductor material mixed in a solvent preparation in which the content of higher boiling impurities is reduced. The solvent preparation comprises a high boiling point solvent and 0.1 wt % or less of impurities having a higher boiling point than the solvent. The liquid composition is deposited on a surface by inkjet printing to form the organic layer. Also, provided are liquid compositions which can be used to make organic layers.12-23-2010
20100029025Production Apparatus and Method of Producing a Light-Emitting Device by Using the Same Apparatus - The present invention relates to a method for manufacturing a light-emitting device. At least one of a light-emitting film forming step, a conductive film forming step and an insulating film forming step is carried out while holding a substrate in a manner that an angle subtended by a surface of the substrate and the direction of gravity is within a range of from 0 to 30°.02-04-2010
20080293171LIGHT EMITTING DIODES (LEDs) WITH IMPROVED LIGHT EXTRACTION BY ROUGHENING - Systems and methods are disclosed for fabricating a semiconductor light emitting diode (LED) device by forming an n-gallium nitride (n-GaN) layer on the LED device and roughening the surface of the n-GaN layer to extract light from an interior of the LED device.11-27-2008
20110117684Semiconductor light-emitting element and method for producing the same - A semiconductor light-emitting element includes, a first semiconductor layer, a second semiconductor layer, a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode connected to the first semiconductor layer, and a second electrode provided on the second semiconductor layer. A side of the second electrode facing to the second semiconductor layer is composed of at least any one of silver and silver alloy. The second electrode has a void having a width of emission wavelength or less of the light-emitting layer in a plane of the second electrode facing to the second semiconductor layer.05-19-2011
20110151599Vapor deposition apparatus having improved carrier gas supplying structure and method of manufacturing an organic light emitting display apparatus by using the vapor deposition apparatus - A vapor deposition apparatus includes a canister configured to contain a vapor deposition source, the canister including a gas inlet and a gas outlet opposite to each other, a heater configured to heat the canister, a chamber in fluid communication with the canister, the chamber being configured to contain a vapor deposition target, and a carrier gas supplying unit configured to supply a carrier gas into the canister.06-23-2011
20120156812MASK FRAME ASSEMBLY, METHOD OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY DEVICE USING THE MASK FRAME ASSEMBLY - A mask frame includes a frame and a mask installed on the frame while being stretched in a first direction. The mask includes a deposition area including a plurality of deposition pattern portions, an edge unit formed to have a thickness greater than a thickness of the deposition area and including a first edge and a second edge that extend in the first direction on two sides of the deposition area, and two or more ribs formed to have a thickness greater than the thickness of the deposition area between deposition pattern portions adjacent to each other in a second direction perpendicular to the first direction.06-21-2012
20110318855METHOD FOR FABRICATING LIGHT EMITTING DIODE CHIP - A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passivation layer are formed on a portion of the semiconductor device layer not covered by the current spreading layer. Finally, a first electrode is formed on the current blocking layer and the current spreading layer. Moreover, a second electrode is formed on the semiconductor device layer.12-29-2011
20120009696LIGHT-EMITTING ELEMENT CAPABLE OF INCREASING AMOUNT OF LIGHT EMITTED, LIGHT-EMITTING DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DEVICE - A light-emitting element capable of increasing the amount of light emitted, a light-emitting device including the same, and a method of manufacturing the light-emitting element and the light-emitting device include a buffer layer having an uneven pattern formed thereon; a light-emitting structure including a first conductive pattern of a first conductivity type that is conformally formed along the buffer layer having the uneven pattern formed thereon, a light-emitting pattern that is conformally formed along the first conductive pattern, and a second conductive pattern of a second conductivity type that is formed on the light-emitting pattern; a first electrode electrically connected to the first conductive pattern; and a second electrode electrically connected to the second conductive pattern.01-12-2012
20110165705Method for Fabricating LED Chip Comprising Reduced Mask Count and Lift-Off Processing - A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode.07-07-2011
20110165704ORGANIC ELECTROLUMINESCENT ELEMENT AND MANUFACTURING METHOD THEREOF - An organic electroluminescent element 07-07-2011
20120064648DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME - It is an object of the present invention to provide a method for manufacturing a display device in which unevenness generated under a light-emitting element does not impart an adverse effect on the light-emitting element. It is another object of the invention to provide a method for manufacturing a display device in which penetration of water into the inside of the display device through a film having high moisture permeability can be suppressed without increasing processing steps considerably. A display device of the present invention comprises a thin film transistor and a light-emitting element, the light-emitting element including a light-emitting laminated body interposed between a first electrode and a second electrode; wherein the first electrode is formed over an insulating film formed over the thin film transistor; and wherein a planarizing film is formed in response to the first electrode between the first electrode and the insulating film.03-15-2012
20120070919SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THEREOF, AND METHOD OF MANUFACTURING BASE MATERIAL - It is an object of the invention to provide a lightweight semiconductor device having a highly reliable sealing structure which can prevent ingress of impurities such as moisture that deteriorate element characteristics, and a method of manufacturing thereof. A protective film having superior gas barrier properties (which is a protective film that is likely to damage an element if the protective film is formed on the element directly) is previously formed on a heat-resistant substrate other than a substrate with the element formed thereon. The protective film is peeled off from the heat-resistant substrate, and transferred over the substrate with the element formed thereon so as to seal the element.03-22-2012
20110092001LIGHT EMITTING DIODE - A semiconductor device including a wafer-level LED includes a semiconductor structure coupled to first and second electrodes. The semiconductor includes a P-doped portion of a first layer to an N-doped portion of a second layer. The first layer includes a surface configured to emit light. The first electrode is electrically coupled to the P-doped portion of the first layer on a first side of the semiconductor structure. The first side is adjacent to the surface that is configured to emit the light. The second electrode is electrically coupled to the N-doped portion of the second layer on a second side of the semiconductor structure. The second side is also adjacent to the surface that configured to emit light.04-21-2011
20110183449APPARATUS AND METHOD FOR MANUFACTURING LIGHT-EMITTING DIODE - An apparatus and method for manufacturing a light emitting devices by separating a semiconductor layer from a substrate includes a laser beam source for emitting a laser beam, a mesh-typed mask having a plurality of apertures through which the laser beam passes to provide a plurality of unit beams; and an imaging lens for forming a plurality of beam spots by focusing the plurality of unit beams at an interface between a substrate and a semiconductor layer to separate the substrate from the semiconductor layer.07-28-2011
20120164765LOCALIZED ANNEALING OF METAL-SILICON CARBIDE OHMIC CONTACTS AND DEVICES SO FORMED - A method of forming an ohmic contact for a semiconductor device can be provided by thinning a substrate to provide a reduced thickness substrate and providing a metal on the reduced thickness substrate. Laser annealing can be performed at a location of the metal and the reduced thickness substrate at an energy level to form a metal-substrate material to provide the ohmic contact thereat.06-28-2012
20120164764METHOD FOR FABRICATING SEMICONDUCTOR LIGHTING CHIP - A method for fabricating a semiconductor lighting chip includes steps of: providing a substrate with a first block layer dividing an upper surface of the substrate into a plurality of epitaxial regions; forming a first semiconductor layer on the epitaxial regions; forming a second block layer partly covering the first semiconductor layer; forming a lighting structure on an uncovered portion of the first semiconductor layer; removing the first and the second block layers thereby defining clearances at the bottom surfaces of the first semiconductor layer and the lighting structure; and permeating etching solution into the first and second clearances to etch the first semiconductor layer and the lighting structure, thereby to form each of the first semiconductor layer and the lighting structure with an inverted frustum-shaped structure.06-28-2012
20120214263Fabrication System and Manufacturing Method of Light Emitting Device - The present invention provides a vapor deposition method and a vapor deposition system of film formation systems by which EL materials can be used more efficiently and EL materials having superior uniformity with high throughput rate are formed. According to the present invention, inside a film formation chamber, an evaporation source holder in a rectangular shape in which a plurality of containers sealing evaporation material is moved at a certain pitch to a substrate and the evaporation material is vapor deposited on the substrate. Further, a longitudinal direction of an evaporation source holder in a rectangular shape may be oblique to one side of a substrate, while the evaporation source holder is being moved. Furthermore, it is preferable that a movement direction of an evaporation source holder during vapor deposition be different from a scanning direction of a laser beam while a TFT is formed.08-23-2012
20120178191ORGANIC ELECTROLUMINESCENCE ELEMENT AND MANUFACTURING METHOD THEREOF - To improve the light emission characteristics of a device when a transition metal oxide is used for the hole injection layer, in particular, to enhance the electron blocking characteristics of a transition metal oxide. An organic electroluminescence element comprising an anode, a cathode and a plurality of functional layers formed between the anode and the cathode, the functional layer containing a layer with a light-emitting function composed of at least one kind of an organic semiconductor and, between the anode and the layer with a light-emitting function, a charge injection layer composed of at least one kind of a transition metal oxide, wherein the ratio of the metal to oxygen at the anode side of the transition metal oxide layer is smaller than the stoichiometric ratio and at the same time, the ratio of the metal to oxygen at the layer with a light-emitting function side is greater than that at the anode side.07-12-2012
20100009475Disk Laser Including an Amplified Spontaneous Emission (ASE) Suppression Feature - A laser system may include a first portion of laser host material adapted for amplification of laser radiation and a second portion of laser host material surrounding the first portion which may be adapted for suppression of ASE. The first portion of laser host material and the second portion of laser host material may be respectively doped at a different predetermined concentration of laser ions. A heat exchanger may be provided to dissipate heat from the first portion and the second portion.01-14-2010
20090061548METHOD FOR FABRICATING PIXEL STRUCTURE - A method for fabricating a pixel structure is provided. First, a substrate having an active device formed thereon is provided. The active device has a gate, a gate dielectric layer, and a semiconductor layer having a channel, a source, and a drain region. Then, a dielectric layer is formed to cover the active device, and a photo-resist layer having a first photo-resist block and a second photo-resist block thinner than the first photo-resist block is formed on the dielectric layer. The second photo-resist block has openings above the source and the drain region, respectively. The source and the drain regions are exposed by removing part of the dielectric layer with the photo-resist layer as a mask. A second metal layer is formed after removing the second photo-resist block. A source and a drain are formed after removing the first photo-resist block. A pixel electrode connected to the drain is formed.03-05-2009
20080299687TOP-EMITTING NITRIDE-BASED LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided are a top-emitting N-based light emitting device and a method of manufacturing the same. The device includes a substrate, an n-type clad layer, an active layer, a p-type clad layer, and a multi ohmic contact layer, which are sequentially stacked. The multi ohmic contact layer includes one or more stacked structures, each including a modified metal layer and a transparent conductive thin film layer, which are repetitively stacked on the p-type clad layer. The modified metal layer is formed of an Ag-based material.12-04-2008
20110003408FLAT PANEL DISPLAY AND METHOD FOR FABRICATING THE SAME - A flat panel display, having an anti-electrostatic configuration, comprising a plurality of gate lines and data lines formed on an insulating substrate having an emission region and a pad portion, an anti-electrostatic wire initially coupling the gate lines, and an anti-electrostatic circuit coupled to a data line. The anti-electrostatic wire between a gate line and an adjacent gate line is subsequently cut by an opening for cutting the anti-electrostatic wire to electrically isolate the respective gate lines.01-06-2011
20110003407LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - There are provided a light emitting device and a method of manufacturing the same. A light emitting device according to the present invention includes a substrate; an N-type semiconductor layer, an active layer and a P-type semiconductor layer, sequentially formed on the substrate; one or more trenches formed to expose the N-type semiconductor layer by partially removing at least the P-type semiconductor and active layers; a first insulating layer formed on sidewalls of the trenches; and a conductive layer filled in the trenches having the first insulating layer formed therein. According to the present invention, it is possible to obtain a characteristic of uniform current diffusion, and thus, light is uniformly emitted to thereby enhance the light emitting efficiency.01-06-2011
20110003406FLAT PANEL DISPLAY WITH HIGH EFFICIENCY AND METHOD OF FABRICATING THE SAME - An organic light emitting device is disclosed. In one embodiment, the organic light emitting device includes red (R), green (G) and blue (B) lower electrodes formed on a substrate. R, G, B organic thin film layers are formed on the R, G, B lower electrodes, respectively. Additionally, an upper single or multilayer electrode is formed over the substrate. Portions of the upper electrode that correspond to the R, G, B organic thin film layers, respectively, are formed to each have a different thickness. Various methods for forming the upper electrode using a fine metal mask, a halftone mask, and single and multiple photolithography processes are also disclosed.01-06-2011
20120322176METHOD OF MAKING DIODE HAVING REFLECTIVE LAYER - A method of forming a light emitting diode includes forming a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN layer. A p-GaN layer is formed on the active layer. A p-electrode is formed on the p-GaN layer and an n-electrode is formed on the n-GaN layer. A reflective layer is formed on a second side of the transparent substrate. A scribe line is formed on the substrate for separating the diodes on the substrate. Also, a cladding layer of AlGaN is between the p-GaN layer and the active layer.12-20-2012
20120322177METHOD OF INTEGRATING SLOTTED WAVEGUIDE INTO CMOS PROCESS - A method for integrating a slotted waveguide into a CMOS process is disclosed. A slot can be patterned on a SOI wafer by etching a first pad hard mask deposited over the wafer. The slot is then filled with a plug material by depositing a second pad hard mask over the first pad hard mask. A waveguide in association with one or more electronic and photonic devices can also be patterned on the SOI wafer. The trenches can be filled with an isolation material and then polished. Thereafter, the first and second pad hard masks can be stripped from the wafer. The slot can once again be filled with the plug material and patterned. After forming one or more electronic and photonic devices on the wafer using the standard CMOS process, a via can be opened up down to the nitride plug and the nitride plug can then be removed.12-20-2012
20120276666METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making light emitting diode, the method includes the following steps. First, a substrate having an epitaxial growth surface is provided. Second, a carbon nanotube layer is suspended above the epitaxial growth surface. Third, a first semiconductor layer, an active layer and a second semiconductor layer are grown on the epitaxial growth surface in that order. Fourth, a portion of the second semiconductor layer and the active layer is etched to expose a portion of the first semiconductor layer. Fifth, a first electrode is prepared on the first semiconductor layer and a second electrode is prepared on the second semiconductor layer.11-01-2012
20120100645METHOD FOR FABRICATING LIGHT EMITTING DEVICE - A method for fabricating a light emitting device is provided. The method comprises forming a light emitting structure comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer and forming a mixed-period photonic crystal structure on the light emitting structure. And the forming of the mixed-period photonic crystal structure includes defining a first photonic crystal structure through a lithography process and a dry etching process, and forming a second photonic crystal structure through a wet etching process.04-26-2012
20120100644ORGANIC LAYER DEPOSITION APPARATUS, AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS USING THE SAME - An organic layer deposition apparatus including an electrostatic chuck combined with a substrate so as to fixedly support the substrate. The organic layer deposition apparatus including a receiving surface that has a set curvature for receiving the substrate; a deposition source for discharging a deposition material toward the substrate; a deposition source nozzle unit disposed at a side of the deposition source and including a plurality of deposition source nozzles arranged in a first direction; and a patterning slit sheet disposed to face the deposition source nozzle unit, and having a plurality of patterning slits arranged in a second direction perpendicular to the first direction, wherein a cross section of the patterning slit sheet on a plane formed by lines extending in the second direction and a third direction is bent by a set degree, wherein the third direction is perpendicular to the first and second directions.04-26-2012
20100167434METHOD FOR FABRICATING LIGHT EMITTING DIODE CHIP - A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passivation layer are formed on a portion of the semiconductor device layer not covered by the current spreading layer. Finally, a first electrode is formed on the current blocking layer and the current spreading layer. Moreover, a second electrode is formed on the semiconductor device layer.07-01-2010
20130011943Film Forming Method - One embodiment of the present invention is a film forming method comprising: arranging a surface of a film formation substrate 01-10-2013
20130011942Method for Manufacturing Light Emitting Device - An object of the present invention to improve reliability of a light emitting device having a mixed layer including an organic compound and metal oxide without reducing productivity. The above object is solved in such a way that after forming the mixed layer including the organic compound and metal oxide, the mixed layer is exposed to a nitrogen gas atmosphere without being exposed to a gas atmosphere including oxygen, and then a stacked film is formed over the mixed layer without exposing the mixed layer to a gas atmosphere including oxygen.01-10-2013
20110159610Polycrystalline silicon as an electrode for a light emitting diode and method of making the same - Metal induced polycrystallized silicon is used as the anode in a light emitting device, such as an OLED or AMOLED. The polycrystallized silicon is sufficiently non-absorptive, transparent and made sufficiently conductive for this purpose. A thin film transistor can be formed onto the polycrystallized silicon anode, with the silicon anode acting as the drain of the thin film transistor, thereby simplifying production.06-30-2011
20110263053METHOD FOR MANUFACTURING PIXEL STRUCTURE - A pixel structure including a scan line, a data line, an active device, a shielding electrode, and a pixel electrode is provided on a substrate. The data line includes an upper conductive wire and a bottom conductive wire. The upper conductive wire is disposed over and across the scan line. The bottom conductive wire is electrically connected to the upper conductive wire. The active device is electrically connected to the scan line and the upper conductive wire. The shielding electrode is disposed over the bottom conductive wire. The pixel electrode disposed over the shielding electrode is electrically connected to the active device. In addition, parts of the pixel electrode and parts of the shielding electrode form a storage capacitor.10-27-2011
20080220547SINGLE-CHIP SURFACE MOUNTED LED STRUCTURE AND A METHOD FOR MANUFACTURING THE SAME - A single-chip surface mounted LED structure and a method for manufacturing the same, said LED structure mainly comprises an LED chip, a heat sink structure, two opposing electrodes, conducting wires and a supporting structure; said method comprises the steps of firstly cutting off a spare area other than said heat sink structure and two opposing electrodes from a metal material belt, forming a basic shape, forming said supporting structure in the region of said heat sink structure and two opposing electrodes using plastic injection molding, and then further cutting off the rest of said metal material belt to separate said heat sink structure and two opposing electrodes, and finally using chip-bonding and wire bonding to package sad LED structure and cutting off said packaged LED structure from said metal material belt.09-11-2008
20130143335METHOD AND APPARATUS FOR OPTICAL MODULATION - The present invention is a method and an apparatus for optical modulation, for example for use in optical communications links. In one embodiment, an apparatus for optical modulation includes a first silicon layer having one or more trenches formed therein, a dielectric layer lining the first silicon layer, and a second silicon layer disposed on the dielectric layer and filling the trenches.06-06-2013
20130178000METHOD FOR FABRICATING SEMICONDUCTOR LIGHT EMITTING DEVICE - A method for fabricating a semiconductor light emitting device is provided. The method includes forming a semiconductor light emitting portion including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and a light emitting layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. The method also includes forming a first conductivity-type semiconductor side electrode connected to the first conductivity-type semiconductor layer; forming a second conductivity-type semiconductor side electrode connected to the second conductivity-type semiconductor layer; and forming an insulator film covering the semiconductor light emitting portion, such that a first portion of the insulator film is surrounded by the second conductivity-type semiconductor side electrode and is separated from the second conductivity-type semiconductor side electrode by a separation area.07-11-2013
20120252143METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DEVICE - To solve a problem that, in a method of manufacturing an organic light emitting device using a step of releasing a layer formed on a release layer by dissolving the release layer, released film flakes are not dissolved in a removing liquid for dissolving the release layer, and thus may drift in the removing liquid and may adhere to a surface of a substrate after patterning to cause defective patterning, provided is a method of manufacturing an organic light emitting device, including forming the release layer continuously over multiple light emitting portions to cause the size of the released film flakes to be large. This may reduce the possibility that the released film flakes adhere to the surface of the substrate and may facilitate, even when the released film flakes once adhere to the surface of the substrate, removal of the released film flakes later, thereby suppressing defective patterning.10-04-2012
20130115725LIGHT EMITTING DIODE HAVING A TRANSPARENT SUBSTRATE - A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.05-09-2013
20130102095Light Emitting Diodes with Smooth Surface for Reflective Electrode - A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are separately disposed on the epitaxial layer structure, and the epitaxial layer structure has a root-means-square (RMS) roughness less than about 3 at a surface whereon the first electrode is formed.04-25-2013
20130130417MANUFACTURING METHOD OF A LIGHT-EMITTING DEVICE - A method for manufacturing a light-emitting device includes steps of: providing a substrate comprising an upper surface and a lower surface opposite to the upper surface; processing the upper surface to be an uneven surface; forming a light-emitting structure on the upper surface of the substrate; and forming a hole through the substrate by radiating a coherent laser beam to the lower surface of the substrate for a predetermined time; wherein the band gap energy of the coherent laser beam is higher than the band gap energy of the substrate thereby the substrate is etched away by the laser beam.05-23-2013
20130143336Methods of Fabricating Optoelectronic Devices Using Layers Detached from Semiconductor Donors and Devices Made Thereby - Methods of making optoelectronic devices containing functional elements made from layers liberated from natural and/or fabricated lamellar semiconductor donors. In one embodiment, a donor is provided, a layer is detached from the donor, and the layer is incorporated into an optoelectronic device as a functional element thereof. The thickness of the detached layer is tuned as needed to suit the functionality of the functional element. Examples of functional elements that can be made using detached layers include p-n junctions, Schotkey junctions, PIN junctions, and confinement layers, among others. Examples of optoelectronic devices that can incorporate detached layers include LEDs, laser diodes, MOSFET transistors, and MISFET transistors, among others.06-06-2013
20100317131METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE - An embodiment of this invention relates to a method for manufacturing a light emitting device. The disclosed method for manufacturing a light emitting device includes the steps of: preparing a substrate wherein the crystal growth surface is a-plane or an m-plane; forming a buffer layer on said substrate; forming a semiconductor layer on said buffer layer, and separating said semiconductor layer from said substrate by removing said buffer layer.12-16-2010
20130157392Method of Manufacturing Light Emitting Device - A method of manufacturing a light emitting device is provided which requires low cost, is easy, and has high throughput. The method of manufacturing a light emitting device is characterized in that: a solution containing a light emitting material is ejected to an anode or cathode under reduced pressure; a solvent in the solution is volatilized until the solution reaches the anode or cathode; and the remaining light emitting material is deposited on the anode or cathode to form a light emitting layer. A burning step for reduction in film thickness is not required after the solution application. Therefore, the manufacturing method, which requires low cost and is easy but which has high throughput, can be provided.06-20-2013
20130203192SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer and a light emitting part. The first semiconductor layer includes an n-type semiconductor layer. The second semiconductor layer includes a p-type semiconductor layer. The light emitting part is provided between the first semiconductor layer and the second semiconductor layer, and includes a plurality of barrier layers and a well layer provided between the plurality of barrier layers. The first semiconductor layer has a first irregularity and a second irregularity. The first irregularity is provided on a first major surface of the first semiconductor layer on an opposite side to the light emitting part. The second irregularity is provided on a bottom face and a top face of the first irregularity, and has a level difference smaller than a level difference between the bottom face and the top face.08-08-2013

Patent applications in class MAKING DEVICE OR CIRCUIT EMISSIVE OF NONELECTRICAL SIGNAL

Patent applications in all subclasses MAKING DEVICE OR CIRCUIT EMISSIVE OF NONELECTRICAL SIGNAL