Class / Patent application number | Description | Number of patent applications / Date published |
430327000 | Processing feature prior to imaging | 14 |
20080213706 | Method and apparatus for thermal development having a removable support member - This invention pertains to a method and apparatus for thermally developing a photosensitive element, and particularly to a method and apparatus for supporting the photosensitive element with a removable flexible support member during thermal treatment. | 09-04-2008 |
20080311530 | GRADED TOPCOAT MATERIALS FOR IMMERSION LITHOGRAPHY - A topcoat material for immersion lithography and a method of performing immersion lithography using the topcoat material. The topcoat material includes a mixture of a first polymer and a second polymer. The first and second polymers of the topcoat material, when the topcoat material is formed into a topcoat layer between an immersion fluid and a photoresist layer, disperse non-homogenously throughout the topcoat layer. | 12-18-2008 |
20090004610 | METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method and apparatus for manufacturing a semiconductor device is disclosed. In particular, the application discloses a method that performs a lithography process using a material capable of increasing a depth of focus so as to prevent efficiency of the lithography process from being degraded due to high integration of a semiconductor device, and a pressure-type bake oven as an apparatus for forming a high refractive material on a semiconductor substrate, having advantages of reducing manufacturing costs of a semiconductor manufacturing process and increasing efficiency of the lithography process. | 01-01-2009 |
20090029298 | METHOD OF MANUFACTURING PATTERNED MAGNETIC RECORDING MEDIUM - Provided is a method of manufacturing a patterned magnetic recording medium. The method includes (a) forming a patterned recording layer on an underlayer of a first substrate; (b) coating a polymer layer on a surface of a second substrate; (c) transferring the polymer layer on the patterned recording layer; and (d) exposing the surface of the patterned recording layer. | 01-29-2009 |
20090035708 | LAYER PATTERNING USING DOUBLE EXPOSURE PROCESSES IN A SINGLE PHOTORESIST LAYER - A structure and a method for forming the same. The method includes providing a structure which includes (a) a to-be-patterned layer, (b) a photoresist layer on top of the to-be-patterned layer wherein the photoresist layer includes a first opening, and (c) a cap region on side walls of the first opening. A first top surface of the to-be-patterned layer is exposed to a surrounding ambient through the first opening. The method further includes performing a first lithography process resulting in a second opening in the photoresist layer. The second opening is different from the first opening. A second top surface of the to-be-patterned layer is exposed to a surrounding ambient through the second opening. | 02-05-2009 |
20090042148 | Photoresist Composition for Deep UV and Process Thereof - The present invention refers to a photoresist composition comprising (i) a polymer A comprising at least one acid labile group; (ii) at least one photoacid generator; (iii) at least one base; (iv) a polymer B, where polymer B is non-miscible with polymer A and soluble in the coating solvent, and; (v) a coating solvent composition. The present invention also relates to the process of imaging the photoresist. | 02-12-2009 |
20090075217 | TAPERED EDGE BEAD REMOVAL PROCESS FOR IMMERSION LITHOGRAPHY - A method and apparatus for forming a tapered photoresist edge. The method includes: forming a photoresist layer on a substrate; exposing a first annular region of the photoresist layer adjacent to a perimeter of the substrate to actinic radiation, the first annular region having a first outer perimeter proximate to a perimeter of the substrate and a first inner perimeter away from the perimeter of the substrate, the actinic radiation gradually decreasing in intensity from the first outer perimeter to the first inner perimeter; and developing the exposed first annular region of the photoresist layer to form a tapered profile in a second annular region of the photoresist layer, the second annular region having a second perimeter proximate to the perimeter of the substrate and a second inner perimeter away from the substrate perimeter, the profile gradually increasing in thickness from the second outer perimeter to the second inner perimeter. | 03-19-2009 |
20090081598 | FUNCTIONALIZED CARBOSILANE POLYMERS AND PHOTORESIST COMPOSITIONS CONTAINING THE SAME - Linear or branched functionalized polycarbosilanes having an absorbance less than 3.0 μm | 03-26-2009 |
20090098490 | Radiation-Sensitive, Wet Developable Bottom Antireflective Coating Compositions and Their Applications in Semiconductor Manufacturing - The present invention is directed to novel radiation-sensitive, wet developable bottom antireflective coating (DBARC) compositions and their use in semiconductor device manufacturing. The DBARC compositions contain a photoacid generator that produces a photoacid upon exposure to activating radiation. In a photolithographic imaging process, the relatively strong photoacid reduces or eliminates scumming. Further, the relatively large size of the photoacid limits its diffusion through the DBARC, thus minimizing or preventing undercut. The inventive method also limits diffusion of the photoacid by controlling the temperature of the post-exposure baking step. Use of the DBARC compositions with a photoresist in photolithography results in highly resolved features having essentially vertical profiles and no scumming and no undercut, which is critical as microelectronics and semiconductor components become increasingly miniaturized. | 04-16-2009 |
20090104571 | Method for air gap formation using UV-decomposable materials - A method of selectively removing a sacrificial material on a substrate is described. The method comprises forming a sacrificial layer on a substrate. Thereafter, the sacrificial layer is selectively decomposed at a temperature less than the temperature required to thermally decompose the sacrificial layer by selectively exposing the sacrificial layer to UV radiation. | 04-23-2009 |
20090130612 | PATTERNING PROCESS - The invention is directed to a method for patterning a material layer. The method comprises steps of forming a first mask layer on the material layer and then patterning the first mask layer. The patterned first mask layer has a pattern therein and a plurality of gaps within the patterns and the gaps expose a portion of the material layer. Further, a second mask layer is formed over the material layer and the second mask layer fills the gaps. An interface layer is formed between the patterned first mask layer and the second mask layer. A portion of the second material layer is removed until the top surface of the interface layer is exposed. The interface layer is removed to expose a portion of the material layer and the material layer is patterned by using the patterned first mask layer and the second mask layer as a mask. | 05-21-2009 |
20090258322 | METHODS FOR PLANARIZING UNEVENNESS ON SURFACE OF WAFER PHOTORESIST LAYER AND WAFERS PRODUCED BY THE METHODS - A wafer has a substrate and a photoresist layer thereon with a surface that is planarized by positioning over a starting surface of the photoresist layer a gray-scale mask having a pattern that correlates with a gradient height profile of unevenness present on the starting surface, patterning the photoresist layer using the gray-scale mask to produce the pattern thereof in the photoresist layer which, in effect, produces a profile of evenness in the photoresist layer underlying the gradient height profile of unevenness, and developing the patterned photoresist layer such that only a three-dimensional portion thereof corresponding to the gradient height profile of unevenness located above the profile of evenness is removed which, in effect, leaves behind a resulting surface on the photoresist layer made substantially more even and thus substantially in a planarized condition. | 10-15-2009 |
20110091821 | RESIST TREATMENT UNIT, RESIST COATING AND DEVELOPING APPARATUS, AND RESIST TREATMENT METHOD - A resist treatment unit for performing treatment on a resist film which has been formed on a substrate is disclosed. This resist treatment unit includes: a treatment container capable of maintaining a vacuum therein; a mounting table provided in the treatment container for mounting the substrate on which the resist film has been formed thereon; a gas supply part for jetting a mixture gas containing a first gas and a second gas which are chemically inert toward the mounting table at a predetermined flow rate; and an exhaust part capable of exhausting the treatment container to a degree of vacuum at which the mixture gas jetted from the gas supply part at the predetermined flow rate is able to be a molecular beam in the treatment container. | 04-21-2011 |
20140272728 | TECHNIQUES FOR PROCESSING PHOTORESIST FEATURES USING IONS - A method of treating a substrate includes directing first ions over a first range of angles to one or more photoresist features disposed on the substrate, the first ions effective to generate an altered layer in the one or more photoresist features, the altered surface layer encapsulating an inner portion of the one or more photoresist features, and directing second ions different from the first ions over a second range of angles to the one or more photoresist features, the second ions effective to generate gaseous species in the inner regions of the one or more photoresist features. | 09-18-2014 |