Class / Patent application number | Description | Number of patent applications / Date published |
430324000 | Including material deposition | 82 |
20080206687 | Method for Determining Optimal Resist Thickness - In an example embodiment, there is a method ( | 08-28-2008 |
20080227038 | PATTERN FORMATION METHOD - After formation of an underlayer film and an intermediate layer film, a resist pattern formed by the first pattern exposure with the first resist film and the second pattern exposure with the second resist film is transferred to the intermediate layer film. The underlayer film is etched using an intermediate layer pattern as a mask to form an underlayer film pattern. Herein, the first and second resist films are chemically amplified resist films. The second resist film contains a greater amount of additive which improves the sensitivity of the resist or which improves the alkaline solubility of resist exposed part. | 09-18-2008 |
20080233521 | Method for manufacturing substrate for making microarray - A method for manufacturing a substrate for making a microarray wherein a monomolecular film for immobilizing a target molecule can be simply formed position-selectively in manufacture of the substrate for making the microarray is provided. | 09-25-2008 |
20080261160 | METHOD FOR MANUFACTURING PATTERNED THIN-FILM LAYER - A method for manufacturing a patterned thin-film layer according to one preferred embodiment includes the steps of: providing a substrate with a plurality of banks thereon, the plurality of banks defining a plurality of spaces therein for receiving ink therein, each of the banks having a top surface and a plurality of side surfaces adjacent to the top surface; irradiating the plurality of banks with UV light beams, wherein the UV light beams are obliquely incident on the top surfaces of the substrate such that a surface wettability of the ink on the top surfaces is lower than that of the side surfaces of the banks; applying ink into the spaces; and curing the ink so as to form a patterned thin-film layer on the substrate. | 10-23-2008 |
20080268382 | Glass Paste, Method for Producing Display by Using Same, and Display - Disclosed is a glass paste containing a glass powder and an organic component, wherein a black pigment is composed of a complex oxide having a spinel structure and containing Co element and one or more metal elements other than Co element. Consequently, the glass paste is suppressed in color degradation at high temperatures, and thus enables to form a pattern having excellent color and degree of blackness after sintering. | 10-30-2008 |
20080268383 | COATING AND DEVELOPING SYSTEM, COATING AND DEVELOPING METHOD AND STORAGE MEDIUM - A coating and developing system includes two rotating members | 10-30-2008 |
20080286699 | Reticles, and methods of treating reticles, configuring reticles and using reticles - Some embodiments include methods of treating reticles to provide backside masking across regions of the reticle to compensate for problems occurring during photolithographic processing. The problems may be, for example, defects in the reticle, problems associated with deposition or development of photoresist, or problems associated with substrate topography. The masking may alter one or both of transmission of electromagnetic radiation through the masked regions, and polarization of electromagnetic radiation passed through the masked regions. Some embodiments include reticles having patterns along front sides for patterning electric magnetic radiation, and masks across portions of the backsides to at least partially block transmission of electromagnetic radiation through portions of the patterns. | 11-20-2008 |
20080286700 | HIGH RESOLUTION PATTERNING OF SURFACE ENERGY UTILIIZING HIGH RESOLUTION MONOMOLECULAR RESIST FOR FABRICATION OF PATTERNED MEDIA MASTERS - A method for patterning and forming very small structures on a substrate such as a wafer. The process uses a difference in surface energy between a mask and the substrate to selectively deposit a hard mask material such as a metal onto the surface of the substrate. The mask can be formed extremely thin, such as only an atomic mono-layer thick, and can be patterned by ion beam photolithography. The pattern can, therefore, be formed with extremely high resolution. The thin mask layer can be constructed of various materials and can be constructed of perfluoropolyether diacrylate (PDA), which can be dip coated to and exposed to form a desirable positive photoresist mask layer. | 11-20-2008 |
20080292996 | Method for producing a high resolution resist pattern on a semiconductor wafer - In one disclosed embodiment, a method for producing a high resolution resist pattern on a semiconductor wafer comprises depositing a blanket layer of material on a semiconductor wafer, forming a resist interaction substrate on the blanket layer of material, forming a resist layer of a pre-determined thickness on the resist interaction substrate, exposing the resist layer to a patterned radiation, and developing the resulting high resolution resist pattern. In one embodiment, patterned radiation is provided by an extreme ultraviolet (EUV) light source. In other embodiments, patterned radiation may be provided by an electron beam, or ion beam, for example. In one embodiment, the resist layer comprises a chemically amplified resist utilizing a photogenerated acid (PGA), and having a sublayer. In other embodiments, the resist layer includes an additive, for example, fullerite. One disclosed embodiment involves use of an ultra-thin resist layer in combination with a gold resist interaction substrate. | 11-27-2008 |
20080299502 | COATING AND DEVELOPING APPARATUS, OPERATING METHOD FOR SAME, AND STORAGE MEDIUM FOR THE METHOD - In a coating and developing apparatus applied to liquid-immersion light exposure, substrates without an appropriately formed protective film can be recovered without adversely affecting normal-substrate processing efficiency, and in addition, removal of protective films can be simplified. In the coating and developing apparatus of the present invention, abnormal substrates not appropriately surface-coated with a protective film during liquid-immersion light exposure are queued in a queuing module, instead of being loaded into an exposure unit, and after the immediately preceding substrate has been unloaded from the exposure unit and loaded into a designated module, for example, a pre-developing second heating module, each abnormal substrate is loaded into the designated module in order to prevent so-called “scheduled transfer” from being affected, and a protective-film removing unit is also controlled to process the abnormal substrate. | 12-04-2008 |
20080305442 | Patterned material layer, method of forming the same, microdevice, and method of manufacturing the same - A formation method for a patterned material layer comprising a step of exposing a composite layer to light in a predetermined pattern, the composite layer including a first photosensitive resin layer, a protective film, and an upper resin layer; a step of partly removing the exposed composite layer so as to form an opening exposing the substrate and form a groove along the main surface of the substrate on a side face of the opening by depressing the end portion of the upper resin layer on the substrate side, thereby forming a resist frame comprising the composite layer formed with the opening; a step of forming a vacuum coated layer having a material pattern part formed on the substrate in the opening and a part to lift off formed on the resist frame, by vacuum coating process; and a step of removing the part to lift off together with the resist frame, so as to yield a patterned material layer. | 12-11-2008 |
20080318170 | Method of making an optical disc - A method of making an optical disc is disclosed, in which, a flexible imprint mold is made from a fluid-state flexible silicone and has a reversal pattern of a first pattern on a surface. Also, a substrate is provided and has a second pattern on the surface with a semi-reflective layer deposited thereon. A dye or UV curable resin layer is formed on the semi-reflective layer. The flexible imprint mold is used to imprint the dye or UV curable resin layer and allowed to stay on it. After the dye or UV curable resin layer is cured, the flexible imprint mold is released from the cured dye or UV curable resin layer, such that the dye or UV curable resin layer has the first pattern. | 12-25-2008 |
20090029297 | Method of forming fine patterns - It is disclosed a method of forming fine patterns comprising: covering a substrate having photoresist patterns with an over-coating agent for forming fine patterns, applying heat treatment to cause thermal shrinkage of the over-coating agent so that the spacing between adjacent photoresist patterns is lessened by the resulting thermal shrinking action, and removing the over-coating agent substantially completely by way of bringing thusly treated substrate into contact with a remover solution for over 60 seconds. | 01-29-2009 |
20090053657 | PATTERNING PROCESS AND PATTERN SURFACE COATING COMPOSITION - A pattern is formed by applying a first positive resist composition comprising a polymer comprising recurring units which become alkali soluble under the action of acid onto a substrate to form a first resist coating, heat treating, exposing, heat treating, developing to form a first resist pattern, applying a pattern surface coating composition comprising a hydroxyl-containing crosslinkable polymer onto the first resist pattern and crosslinking, thereby covering the first resist pattern with a crosslinked polymer film, applying a second positive resist composition thereon, heat treating, exposing, heat treating, and developing to form a second resist pattern. | 02-26-2009 |
20090130608 | PHOTOPATTERNABLE DEPOSITION INHIBITOR CONTAINING SILOXANE - An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a photopatternable deposition inhibitor material to the substrate, wherein the deposition inhibitor material comprises an organosiloxane compound; and patterning the deposition inhibitor material. The thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material. | 05-21-2009 |
20090130609 | Colored mask combined with selective area deposition - The invention relates to a process for forming a structure comprising (a) providing a transparent support; (b) forming a color mask on a first side of the transparent support; (c) applying a first layer comprising a deposition inhibitor material that is sensitive to visible light; (d) patterning the first layer by exposing the first layer through the color mask with visible light to form a first pattern and developing the deposition inhibitor material to provide selected areas of the first layer effectively not having the deposition inhibitor material; and (e) depositing a second layer of functional material over the transparent support; wherein the second layer of functional material is substantially deposited only in selected areas over the transparent support not having the deposition inhibitor material. | 05-21-2009 |
20090142711 | METHOD OF FORMING MASK PATTERN - The present invention relates to a method of forming a mask pattern. According to the present invention, a negative photoresist layer is formed over a substrate. Some regions of the negative photoresist layer are exposed. The exposed negative photoresist layers are developed. A positive photoresist layer is formed over the substrate including negative tone working photoresist layers. The substrate is baked so that a hydrogen gas is diffused into the positive photoresist layers at boundary portions of the negative tone working photoresist layers. The positive photoresist layers into which the hydrogen gas is diffused are developed. | 06-04-2009 |
20090155732 | Method for Patterning Using Phase-Change Material - A patterned layer over a wafer is produced by depositing a print-patterned mask structure. Energized particles of a target material are deposited over the wafer and the print-patterned mask such that particles of said target material incident on the mask structure enter the mask structure body and minimally accumulate, if at all, on the surface of the mask structure, and otherwise the particles of target material accumulate as a generally uniform layer over the wafer. The print-patterned mask structure, including particles of target material therein, is removed leaving the generally uniform layer of target material as a patterned layer over the wafer. | 06-18-2009 |
20090155733 | METHOD OF FORMING ISO SPACE PATTERN - A method of forming an iso space pattern is provided. In the method, a first material layer is provided, and then a second material layer and a patterned material layer are formed thereon. After that, a first patterned photoresist layer is formed on the patterned material layer to partially cover the patterned material layer and to partially expose the patterned material layer, and the second material layer is then partially removed by using the first patterned photoresist layer and the patterned material layer as a mask. Afterwards, the iso space pattern constituted by the etched second material layer is formed after the first patterned photoresist layer and the patterned material layer are removed. Due to twice photolithography and etching processes, it is likely to form the relatively narrow iso space pattern with use of existing photolithography equipments according to the method. | 06-18-2009 |
20090162799 | METHOD AND SYSTEM FOR FABRICATING THREE-DIMENSIONAL STRUCTURES WITH SUB-MICRON AND MICRON FEATURES - A method and system are provided for fabricating three-dimensional (3D) structures having micron or submicron features. The method includes providing a continuously-formed relief structured material, the relief structured material having a first layer comprising a material having a pattern of relief structures formed on a first surface thereof. The structured material includes second layer comprising a photosensitive material that is disposed on the first layer. The relief structured material is exposed to radiation through the first layer, where the pattern of relief structures formed on the first surface of the first layer generates a 3-dimensional light intensity pattern of the radiation that is incident on the second layer. The exposed material is developed, where the developed material comprises a plurality of 3D structures having micron or submicron features. | 06-25-2009 |
20090202952 | SUBLITHOGRAPHIC PATTERNING METHOD INCORPORATING A SELF-ALIGNED SINGLE MASK PROCESS - A method of implementing sub-lithographic patterning of a semiconductor device includes forming a first set of patterned features with a single lithography step, the initial set of patterned features characterized by a linewidth and spacing therebetween; forming a first set of sidewall spacers on the first set of patterned features, and thereafter removing the first set of patterned features so as to define a second set of patterned features based on the geometry of the first set of sidewall spacers; and performing one or more additional iterations of forming subsequent sets of sidewall spacers on subsequent sets of patterned features, followed by removal of the subsequent sets of patterned features, wherein a given set of patterned features is based on the geometry of an associated set of sidewall spacers formed prior thereto, and wherein a final of the subsequent sets of patterned features is characterized by a sub-lithographic dimension. | 08-13-2009 |
20090208882 | STAMP FOR PATTERNING, METHOD FOR MANUFACTURING SUCH STAMP AND METHOD FOR MANUFACTURING AN OBJECT USING THE STAMP - A stamp for patterning onto a receiving surface of an object ( | 08-20-2009 |
20090246714 | THIN FILM ETCHING METHOD - A thin film etching method includes the steps of: projecting a ultraviolet light to expose an optical resin layer coated on a substrate through a photo mask; heating the substrate to vaporize the exposed optical resin layer and retain the unexposed optical resin layer; forming a thin film to fill the vaporized portion of the optical resin layer; projecting the ultraviolet light to expose the entire optical resin layer; heating the substrate at a high temperature to vaporize the entire optical resin layer on the substrate to retain the thin film formed with a required graphic pattern. The method can be implemented at lower equipment and production costs and improve precision of the thin film etching. | 10-01-2009 |
20090246715 | PLATING METHOD AND METHOD OF FORMING MAGNETIC POLE - The plating method is capable of firmly adhering a resist pattern on a plating base in case that, for example, a main magnetic pole of a vertical recording magnetic head is formed by using the resist pattern and accurately configurating a sectional shape of a plated pattern. The plating method comprises the steps of: applying an alkoxylsilyl propyl amino triazine dithiol solution, which is formed by dissolving alkoxylsilyl propyl amino triazine dithiol acting as molecular glue in a solvent, onto the plating base; volatilizing the solvent to form a molecular glue layer; applying resist onto the plating base coated with the molecular glue layer; optically exposing and developing the resist to expose a part of the plating base; and plating the exposed part of the plating base coated with the molecular glue layer. | 10-01-2009 |
20090253080 | Photoresist Image-Forming Process Using Double Patterning - A process for forming a photoresist pattern on a device, comprising; a) forming a layer of first photoresist on a substrate from a first photoresist composition; b) imagewise exposing the first photoresist; c) developing the first photoresist to form a first photoresist pattern; d) treating the first photoresist pattern with a hardening compound comprising at least 2 amino (NH | 10-08-2009 |
20090253081 | Process for Shrinking Dimensions Between Photoresist Pattern Comprising a Pattern Hardening Step - A process for forming a photoresist pattern on a device, comprising; a) forming a layer of first photoresist on a substrate from a first photoresist composition; b) imagewise exposing the first photoresist; c) developing the first photoresist to form a first photoresist pattern; d) treating the first photoresist pattern with a hardening compound comprising at least 2 amino (NH | 10-08-2009 |
20090253082 | METHOD FOR FORMING RESIST PATTERN - A method for forming a resist pattern, includes forming a lower layer film, forming an intermediate film on the lower layer film, forming a photoresist film containing a photoacid-generating agent on the intermediate film, exposing the photoresist film, and developing the photoresist film. The lower layer film contains at least any one of a free acid, a thermoacid-generating agent, and a photoacid-generating agent, on a substrate to be treated. | 10-08-2009 |
20090291399 | COATING/DEVELOPING APPARATUS AND METHOD - A coating/developing apparatus includes a first storage section that stores data comprising correlations of different pattern information units including at least a line width of the resist pattern, different values of a film thickness of the underlying film, and different light information profiles. The apparatus further includes a mechanism configured to use a film thickness distribution to obtain an estimated film thickness of the underlying film at a light-irradiation area on the surface of the substrate, and to check the estimated film thickness and a light information profile obtained at the light-irradiation area against the data to determine pattern information at the light-irradiation area. | 11-26-2009 |
20090305173 | FORMATION OF A DEVICE USING BLOCK COPOLYMER LITHOGRAPHY - The formation of a device using block copolymer lithography is provided. The formation of the device includes forming a block copolymer structure. The block copolymer structure includes a first polymer and a second polymer. The block copolymer structure also includes a first component deposited between adjacent blocks of the first polymer and a second component deposited between adjacent blocks of the second polymer. A template is developed by removing either the first and second polymers or the first and second components from the block copolymer structure. The formation of the device also includes lithographically patterning the device utilizing the block copolymer structure template. The device may be a data storage medium. | 12-10-2009 |
20090305174 | METHOD OF FORMING RESIST PATTERN - Provided is a method of forming a resist pattern capable of forming a resist pattern, whose dimensional variations and defects are reduced as far as possible, with a high throughput. The invention provides a method of forming a resist pattern involving the following: forming a resist film on a substrate; subjecting the resist film to exposure treatment in a pressure-reduced condition after performing pressure-reducing treatment; performing reduced-pressure releasing treatment that releases the resist film from a pressure-reduced condition while humidifying the resist film by introducing a humidity-adjusted gas into the pressure-reduced environment; performing bake treatment that heats the resist film after the reduced-pressure releasing treatment; and developing the resist film. | 12-10-2009 |
20100021851 | METHODS FOR PRODUCING ORGANIC NANOCRYSTALS - Methods for producing small crystals on islands formed on specialized substrates by, inter alia, subjecting the substrate to a hydrophilic SAMs solution for self-assembling hydrophilic SAMs on certain portions of the substrate surface and subjecting the substrate to a hydrophobic SAMs solution for self-assembling hydrophobic SAMs on certain other portions of the substrate surface. | 01-28-2010 |
20100021852 | COMPOSITION FOR FORMATION OF UPPER LAYER FILM, AND METHOD FOR FORMATION OF PHOTORESIST PATTERN - A composition for formation of upper layer film, which is used for forming an upper layer film on the surface of a photoresist film and which comprises
| 01-28-2010 |
20100086878 | PATTERNING PROCESS - A pattern is formed by applying a first positive resist material onto a substrate, heat treating, exposing to high-energy radiation, heat treating, then developing with a developer to form a first resist pattern; applying a protective coating solution comprising a hydrolyzable silicon compound having an amino group onto the first resist pattern and the substrate, heating to form a protective coating; and applying a second positive resist material thereon, heat treating, exposing to high-energy radiation, heat treating, and then developing with a developer to form a second resist pattern. By forming the second pattern in a space portion of the first pattern, this double patterning reduces the pattern pitch to one half. | 04-08-2010 |
20100227281 | Methods Of Forming Patterns - Some embodiments include methods of forming patterns of openings. The methods may include forming spaced features over a substrate. The features may have tops and may have sidewalls extending downwardly from the tops. A first material may be formed along the tops and sidewalls of the features. The first material may be formed by spin-casting a conformal layer of the first material across the features, or by selective deposition along the features relative to the substrate. After the first material is formed, fill material may be provided between the features while leaving regions of the first material exposed. The exposed regions of the first material may then be selectively removed relative to both the fill material and the features to create the pattern of openings. | 09-09-2010 |
20100248160 | PATTERNING METHOD - A patterning method is provided. First, a material layer is formed on a substrate. Thereafter, an ashable layer is formed on the material layer. Afterwards, a patterned transfer layer is formed on the ashable layer, wherein the patterned transfer layer has a critical dimension less than the exposure limit dimension. Further, the ashable layer is patterned using the patterned transfer layer or a complementary layer of the patterned transfer layer as a mask, so as to form a patterned ashable layer. The material layer is then patterned using the patterned ashable layer as a mask. | 09-30-2010 |
20100248161 | METHOD FOR MAKING ALIGNMENT MARK ON SUBSTRATE - An exemplary method for making an alignment mark on a substrate includes the following steps. First, a substrate with a recess is provided. Second, a photoresist layer is formed on a surface of the substrate including in the recess. Third, the photoresist layer is exposed and developed to leave a body of remaining photoresist in the recess, with the body of remaining photoresist protruding above the surface of the substrate. Fourth, a metal layer is formed in an unfilled area of the recess and on the surface of the substrate, with the metal layer substantially surrounding the remaining photoresist. Finally, the remaining photoresist is removed to form an alignment mark in the metal layer on the substrate. | 09-30-2010 |
20100255428 | METHOD TO MITIGATE RESIST PATTERN CRITICAL DIMENSION VARIATION IN A DOUBLE-EXPOSURE PROCESS - A method to mitigate resist pattern critical dimension (CD) variation in a double-exposure process generally includes forming a photoresist layer over a substrate; exposing the photoresist layer to a first radiation; developing the photoresist layer to form a first pattern in the photoresist layer; forming a topcoat layer over the photoresist layer; exposing the topcoat layer and the photoresist layer to a second radiation; removing the topcoat layer; and developing the photoresist layer to form a second pattern in the photoresist layer. | 10-07-2010 |
20100255429 | FINE PATTERN FORMING METHOD AND COAT FILM FORMING MATERIAL - Provided are a fine pattern forming method for forming a fine resin pattern having an excellent shape on a supporting body, and a coat film forming material used in the fine pattern forming method. A photosensitive resin composition is applied on the supporting body, selectively exposed and developed to form a first resin pattern. On the surface of the first resin pattern, a coat film composed of a water-soluble resin film is formed to form a coat pattern, then, on the supporting body whereupon the coat pattern is formed, a resin composition containing a photo-acid generating agent is applied, and the entire surface is exposed. Then, the work is cleaned by a solvent, and a second resin pattern wherein a resin film is formed on the surface of the coat pattern is formed. The coat film is formed by using the coat film forming material composed of an aqueous solution containing a water soluble resin and a water soluble cross-linking agent. | 10-07-2010 |
20100266967 | POLYMER FOR FORMING ORGANIC ANTI-REFLECTIVE COATING LAYER - A polymer for forming an organic anti-reflective coating layer, which is soluble in alkali solutions so that an additional etching process of anti-reflective coating layer is not required, and a composition including the same are disclosed. The polymer for forming an organic anti-reflective coating layer has the following formula. | 10-21-2010 |
20100273110 | Patterning process - There is disclosed a patterning process comprises at least (1) a step of forming an organic underlayer film on a substrate and then forming a photoresist pattern on the organic underlayer film, (2) a step of attaching an alkaline solution containing an alkaline substance onto the photoresist pattern and then removing the excess alkaline solution, (3) a step of applying a solution of a siloxane polymer crosslinkable by action of the alkaline substance onto the photoresist pattern to form a crosslinked part by crosslinking the siloxane polymer near the photoresist patterns, and (4) a step of removing the uncrosslinked siloxane polymer and the photoresist pattern. There can be provided a patterning process capable of forming a further finer pattern simply and efficiently and with a high practicability applicable to semiconductor manufacturing. | 10-28-2010 |
20100279233 | METHOD FOR LASER INTERFERENCE LITHOGRAPHY USING DIFFRACTION GRATING - A method for laser interference lithography using a diffraction grating includes (a) forming a photoresist layer on a work substrate to which a repeated fine pattern is to be formed; (b) forming a refractive index matching material layer on the photoresist layer; (c) forming on the refractive index matching material layer a diffraction grating layer having a period of diffraction grating within the range from λ/n | 11-04-2010 |
20100279234 | DOUBLE PATTERNING METHOD USING METALLIC COMPOUND MASK LAYER - A hard mask layer and a developable bottom anti-reflective coating (dBARC) layer are formed over a dielectric layer of a substrate. A first photosensitive layer is formed above the dBARC layer, exposed, and developed to form a first pattern. The dBARC layer is developed. The first pattern is etched into the hard mask layer to form a first pattern of openings in the hard mask layer. Following removal of the first photosensitive layer, a second photosensitive layer is formed within the first pattern of openings. The second photosensitive layer is exposed and developed to form a second pattern. The dBARC layer is developed. The second pattern is etched into the hard mask layer to form a second pattern of openings in the hard mask layer. Following the removal of the second photosensitive layer and the dBARC layer, the first and the second patterns are etched into the dielectric layer. | 11-04-2010 |
20100285412 | METHOD FOR FABRICATING 3D MICROSTRUCTURE - A method for fabricating 3D microstructure is disclosed. A matching fluid is arranged between the mask and the photoresist layer. When the mask and photoresist layer perform the relative scanning and exposure process simultaneously, the matching fluid will reduce the diffraction error, so that the gap between the mask and the photoresist layer becomes more tolerable. Besides, the matching fluid also acts as a lubricant for achieving a smooth scanning process, so as to fabricate a high-precision large-area 3D optical microstructure. | 11-11-2010 |
20110003256 | Lithographic Apparatus and Device Manufacturing Method - A method for providing temporary measurement targets during a multiple patterning process which can be removed in the completion of the process. The metrology target is defined in either the first or the second exposure of a multiple exposure process and whether or not it is temporary or made permanent is selected according to whether or not the area of the target is covered or cleared out in the other exposure. The use of temporary targets reduces the amount of space on the substrate that must be devoted to targets. | 01-06-2011 |
20110014576 | METHOD FOR MANUFACTURING SUBSTRATE STRUCTURE - A method for manufacturing a substrate structure includes providing a substrate, forming a plurality of banks on the substrate, the banks and the substrate cooperatively defining a plurality of accommodating rooms, dispensing ink into accommodating rooms in such a manner that the ink covers portions of the banks located between at least two adjacent accommodating rooms using a dispenser, and solidifying the ink in the accommodating rooms to form a patterned layer. | 01-20-2011 |
20110086314 | MELTS - A light-attenuating composition and method of using it are described. The light-attenuating composition may be selectively applied to a radiant energy sensitive material on the substrate. Actinic radiation applied to the composite chemically changes portions of the radiant energy sensitive material not covered by the light-attenuating composition. The light-attenuating composition attenuates light in at least the UV range and is water-soluble or water-dispersible. | 04-14-2011 |
20110091818 | PROCESS FOR PRODUCING PHOTORESIST PATTERN - The present invention provides a process for producing a photoresist pattern comprising the following steps (1) to (11):
| 04-21-2011 |
20110091819 | METHOD FOR FORMING PATTERN - In an exposure step, a combination of a first photomask and a second mask is used. The first mask has a real pattern corresponding to the pattern actually formed on the film to be processed, and a dummy pattern added for controlling pattern pitch in the first photomask within a prescribed range; and the second photomask has a pattern isolating a real-pattern-formed region from a dummy-pattern-formed region. In forming the pattern, after forming a film to be processed on a substrate, a first mask is formed on the film to be processed, by lithography, using the first photomask, and a second mask is formed on the film to be processed, by lithography, using the second photomask. Thereafter, the film to be processed is etched and removed using the first and second masks as masks to form the pattern. | 04-21-2011 |
20110111349 | RESIN COMPOSITION FOR MAKING RESIST PATTERN INSOLUBLE, AND METHOD FOR FORMATION OF RESIST PATTERN BY USING THE SAME - A resist pattern-insolubilizing resin composition is used in a resist pattern-forming method. The resist pattern-insolubilizing resin composition includes solvent and a resin. The resin includes a first repeating unit that includes a hydroxyl group in its side chain and at least one of a second repeating unit derived from a monomer shown by a following formula (1-1) and a third repeating unit derived from a monomer shown by a following formula (1-2), | 05-12-2011 |
20110123936 | RESIST PATTERN COATING AGENT AND RESIST PATTERN-FORMING METHOD - A resist pattern coating agent includes a hydroxyl group-containing resin, a solvent, and at least two compounds including at least two groups shown by a following formula (1), compounds including a group shown by a following formula (2), and compounds including a group shown by a following formula (4). | 05-26-2011 |
20110177460 | PROCESS FOR PRODUCING AN IMAGE ON A SUBSTRATE - The present invention is directed to a process for producing an image on a substrate and a substrate having an image deposited thereon using the aforementioned processes. | 07-21-2011 |
20110183272 | METHOD FOR FABRICATING MICROBEADS AND MICROBEADS - In one example embodiment, a method fabricates microbeads, which can supply a bead set containing a various types of microbeads and having distinct populations of the respective types of microbeads. In one example embodiment, the method includes forming a hydrophilic layer made of a hydrophilic organic material on a substrate. In one example embodiment, the method includes laminating on the hydrophilic layer a thin film capable of being peeled off in the form of microbeads. In one example embodiment, the method includes forming the thin film in a given configuration by photolithography. In one example embodiment, the method includes solid-phasing a given substance on the post-formed thin films. In one example embodiment, the method includes peeling off the post-formed thin films, which have been solid-phased with the substance, from the substrate along with at least a part of the hydrophilic layer to obtain microbeads. | 07-28-2011 |
20110223544 | RESIST PATTERN COATING AGENT AND RESIST PATTERN FORMING METHOD USING THE SAME - A resist pattern coating agent includes a hydroxyl group-containing resin and a solvent. The solvent includes an alcohol shown by a following formula (1) in an amount of about 30 mass % or more, | 09-15-2011 |
20110229829 | LITHOGRAPHY MATERIAL AND LITHOGRAPHY PROCESS - An immersion lithography resist material comprising a matrix polymer having a first polarity and an additive having a second polarity that is substantially greater than the first polarity. The additive may have a molecular weight that is less than about 1000 Dalton. The immersion lithography resist material may have a contact angle that is substantially greater than the contact angle of the matrix polymer. | 09-22-2011 |
20110236837 | Switchable Antireflective Coatings - An antireflective coating compositions comprising (I) a silsesquioxane resin (II) a compound selected from photo-acid generators and thermal acid generators; and (III) a solvent wherein in the silsesquioxane resin contains a carboxylic acid forming group or a sulfuric acid forming group. | 09-29-2011 |
20110269078 | SUBSTRATE TREATMENT TO REDUCE PATTERN ROUGHNESS - A method for patterning a substrate with extreme ultraviolet (EUV) radiation is provided. The method includes contacting a surface of the substrate with at least one surface modification agent that reacts with and bonds to the surface | 11-03-2011 |
20110275020 | Methods Of Forming Photoresist Patterns - Methods of forming photoresist patterns may include forming a photoresist layer on a substrate, exposing the photoresist layer using an exposure mask, forming a preliminary pattern by developing the exposed photoresist layer and treating a surface of the preliminary pattern using a treatment agent that includes a coating polymer. | 11-10-2011 |
20110305995 | RESIN FILM FORMING METHOD - A resin film forming method for forming a resin film on a substrate includes forming an intermediate layer on the substrate which includes an inorganic composition as a main component to chemically bond the resin film to be formed on the substrate to the substrate, carrying out a treatment on the substrate to remove an edge of the intermediate layer from an edge of the substrate, forming the resin film on the substrate by spin coating, chemically bonding the resin film to the substrate and hardening the resin film, and removing an edge of the resin film from the edge of the substrate by applying vibrations to the hardened resin film. | 12-15-2011 |
20110305996 | Beam Pen Lithography - The disclosure relates to methods of beam pen lithography using a tip array having a plurality of transparent, elastomeric, reversibly-deformable tips coated with a blocking layer and apertures defined in the blocking layer to expose tip ends of the tips in the array. The tip array can be used to perform a photolithography process in which the tips are illuminated with a radiation that is channeled through the tips and out the apertures to expose a photosensitive substrate. Also disclosed are tip arrays formed of polymers and gels, apparatus including the tip arrays and radiation sources, and related apparatus for selectively masking tips in the tip array from radiation emitted from the radiation source. | 12-15-2011 |
20120009526 | Method of Forming Fine Patterns - A method of forming fine patterns comprises forming a first auxiliary layer having an acid diffusion rate on an underlying layer, forming a light-transmitting second auxiliary layer having a slower acid diffusion rate than the first auxiliary layer on the first auxiliary layer, exposing respective regions of the first and second auxiliary layers to generate acid in the exposed regions of the first and second auxiliary layers, diffusing the acid using a baking process so that diffusion of the acid is faster in the first auxiliary layer than in the second auxiliary layer, removing acid diffusion regions in the first and second auxiliary layers to form first and second auxiliary patterns, the second auxiliary pattern being wider width than the first auxiliary pattern, filling the removed regions of the first auxiliary layer with material for a hard mask, and removing the material for a hard mask exposed between the second auxiliary patterns to form hard mask patterns on sidewalls of the first auxiliary patterns. | 01-12-2012 |
20120058435 | PATTERN FORMATION METHOD - According to one embodiment, a pattern formation method contains: forming first guides by changing a surface energy of an underlayer material by transferring a pattern of a photomask onto the underlayer material by exposure, and forming second guides by changing the surface energy of the underlayer material between the first guides by diffraction of exposure light generated from the exposure; applying a block copolymer containing a plurality of types of polymer block chains onto the underlayer material; and causing any one of the polymer block chains to form a pattern in accordance with the first and second guides by microphase separation of the block copolymer by a heat treatment. | 03-08-2012 |
20120270158 | MANUFACTURING METHOD OF METAL STRUCTURE OF FLEXIBLE MULTI-LAYER SUBSTRATE - Disclosed is a metal structure of a multi-layer substrate, comprising a first metal layer and a dielectric layer. The first metal layer has an embedded base and a main body positioned on the embedded base. The base area of the embedded base is larger than the base area of the main body. After the dielectric layer covers the main body and the embedded base, the dielectric layer is opened at the specific position of the first metal layer for connecting the first metal layer with a second metal layer above the dielectric layer. When the metal structure is employed as a pad or a metal line of the flexible multi-layer substrate according to the present invention, the metal structure cannot easily be delaminated or separated from the contacted dielectric layer. Therefore, a higher reliability for the flexible multi-layer substrate can be achieved. A manufacturing method thereof is also provided. | 10-25-2012 |
20130164690 | Silicon Oxynitride Film Formation Method and Substrate Equipped with Silicon Oxynitride Film Formed Thereby - The present invention provides a silicon oxynitride film formation method capable of reducing energy cost, and also provides a substrate equipped with a silicon oxynitride film formed thereby. This method comprises the steps of: casting a film-formable coating composition containing a polysilazane compound on a substrate surface to form a coat; drying the coat to remove excess of the solvent therein; and then irradiating the dried coat with UV light at a temperature lower than 150° C. | 06-27-2013 |
20130209941 | METHOD OF FORMING PATTERN - A method of forming a pattern including applying a resist composition to a substrate to form a resist film, and then subjecting the resist film to exposure and development, thereby forming a first pattern containing a resist film; forming a SiO | 08-15-2013 |
20130216956 | MONOLAYER OR MULTILAYER FORMING COMPOSITION - There is provided a composition for forming a monolayer or a multilayer on the substrate. A composition for forming a monolayer or a multilayer containing a silane compound of Formula (1A) or Formula (1B): | 08-22-2013 |
20130224665 | ATOMIC LAYER DEPOSITION LITHOGRAPHY - Methods and apparatus for performing an atomic layer deposition lithography process are provided in the present disclosure. In one embodiment, a method for forming features on a material layer in a device includes pulsing a first reactant gas mixture to a surface of a substrate disposed in a processing chamber to form a first monolayer of a material layer on the substrate surface, directing an energetic radiation to treat a first region of the first monolayer, and pulsing a second reactant gas mixture to the substrate surface to selectively form a second monolayer on a second region of the first monolayer. | 08-29-2013 |
20130230809 | RESIST UNDERLAYER FILM FORMING COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN USING THE SAME - There is provided a composition for forming a resist underlayer film that has a high selectivity of dry etching rate even though the composition contains an aromatic ring such as a benzene ring, and that is useful in lowering LER that presents a large problem in EUV (wavelength 13.5 nm) lithography. Moreover, another object is to obtain a composition for forming a resist underlayer film that provides a resist pattern having a desired shape on the resist underlayer film. A resist underlayer film forming composition for lithography which includes a polymer and a solvent, wherein in the polymer, diphenyl sulfone or a derivative thereof is introduced in the main chain of the polymer through an ether bond. | 09-05-2013 |
20130323652 | METHOD OF FABRICATING PATTERNED FUNCTIONAL SUBSTRATES - Methods of preparing organosilane-functionalized regions on a substrate surface and more specifically fabricating patterned functionalized substrates suitable to be optically read, the methods generally comprising employing a vapor deposition process of an organosilane gas onto a lithographically patterned silicon surface followed by removal of the patterning media in a bath of organic solvents and ultrasonic excitation. The inventive methods provide optimized surface density of functional species while avoiding deleterious effects that can occur when lithographically patterned substrates are exposed to various gaseous species during the functionalization process. | 12-05-2013 |
20140051027 | Multiple Step Printing Methods for Microbarcodes - A system and method for forming encoded microparticles is described. One embodiment includes a method for forming a microparticle, the method comprising providing a pattern, wherein the pattern defines a code element, printing the pattern on a substrate to form a first code element within a microparticle region, printing the pattern on the substrate to form at least one successive code element, such that the first code element and the at least one successive code element are within the same microparticle region, wherein a code is formed by the first code element and any successive code elements. | 02-20-2014 |
20140234781 | PATTERN FORMING PROCESS - A pattern is formed by coating a resist composition comprising a resin comprising recurring units having an acid labile group, a photoacid generator, and a first organic solvent onto a processable substrate, prebaking, exposing, PEB, and developing in an organic solvent developer to form a negative pattern; heating the negative pattern to render it resistant to a second organic solvent; coating a solution containing Si, Ti, Zr, Hf, and/or Al and the second organic solvent thereon, prebaking, and dry etching to effect image reversal for converting the negative pattern into a positive pattern. | 08-21-2014 |
20140242524 | TWO MASK PROCESS FOR ELECTROPLATING METAL EMPLOYING A NEGATIVE ELECTROPHORETIC PHOTORESIST - A negative electrophoretic photoresist is applied over a plurality of protruding disposable template portions on a substrate. A silo structure is placed on planar portions of the negative electrophoretic photoresist that laterally surround the plurality of protruding disposable template portions. The negative electrophoretic photoresist is lithographically exposed employing the silo structure and a first lithographic mask, which includes a transparent substrate with isolated opaque patterns thereupon. After removal of the silo structure, the negative electrophoretic photoresist is lithographically exposed employing a second lithographic mask, which includes a pattern of transparent areas overlying the planar portions of the negative electrophoretic photoresist less the areas for bases of metal structure to be subsequently formed by electroplating. The negative electrophoretic photoresist is developed to form cavities therein, and metal structures are formed by electroplating within the cavities. The negative electrophoretic photoresist and the plurality of protruding disposable template portions can be subsequently removed. | 08-28-2014 |
20140242525 | PATTERNING OF TRANSPARENT CONDUCTIVE COATINGS - A method of patterning a conductive polymer includes providing a conductive polymer layer coated over a first support followed by pattern-wise transferring a layer containing polyvinyl acetal from a second support onto the conductive polymer to form a mask with at least one opening. The masked conductive polymer is subjected to treatment through the opening that changes the conductivity of the conductive polymer by at least one order of magnitude in areas not covered by the mask. | 08-28-2014 |
20140315134 | METHOD AND APPARATUS FOR MANUFACTURING DONOR SUBSTRATE - In a method and apparatus for manufacturing a donor substrate, a pattern layer which exposes a surface of a substrate is arranged on the substrate, and an organic material is deposited on the exposed surface of the substrate. The pattern layer includes a film pattern that defines a plurality of first openings and a photoresist pattern that is positioned on the film pattern and defines second openings, which correspond to the first openings, respectively, a minimum width of the second openings being smaller than that of the first openings. | 10-23-2014 |
20140329182 | METHOD FOR PRODUCING LAYERED MATERIALS USING LONG-LIVED PHOTO-INDUCED ACTIVE CENTERS - The invention relates to a method for applying a photo-activated layered polymer coating to a substrate material in which one or more layers do not contain photoinitiator, or are not exposed to initiating light, but cure due to migration of cationic active centers. At least two separate monomer layers are applied to the substrate material. At least one of the monomer layers includes a photoinitiator capable of producing cationic active centers. The at least one layer including the photoinitiator is exposed to a source of UV radiation at a desired wavelength forming cationic active centers. The at least two separate monomer layers react in a polymerization reaction forming a cured layered material. The cationic active centers of the exposed monomer layer migrate to the unexposed layer such that both layers cure via the polymerization reaction. | 11-06-2014 |
20140335459 | METHOD OF FORMING POLYMER NANOFIBER METAL-NANOPARTICLE COMPOSITE PATTERN - A method of forming a polymer nanofiber-metal nanoparticle composite pattern includes forming on a substrate a polymer nanofiber layer comprising polymer nanofibers made from polymers including a heteroaryl group; selectively exposing to UV-ozone a part of the polymer nanofiber layer through an aperture of a mask; selectively removing a part of the polymer nanofiber layer which was not exposed to UV-ozone from the polymer nanofiber layer to form a polymer nanofiber layer pattern; depositing a metal precursor on the polymer nanofiber layer pattern; and reducing the metal precursor into a metal. | 11-13-2014 |
20150086929 | PATTERN FORMING PROCESS AND SHRINK AGENT - A negative pattern is formed by applying a resist composition onto a substrate, exposing the resist film, and developing the exposed resist film in an organic solvent developer. The process further involves coating the negative pattern with a shrink agent solution of a copolymer comprising recurring units having an α-trifluoromethylhydroxy or fluoroalkylsulfonamide group and recurring units having an acid labile group-substituted amino group in a C | 03-26-2015 |
20150093706 | METHOD FOR RECORDING AN IMAGE AND ASSOCIATED MEDIUM - The invention relates to a method for recording a source image, in which a reproduction of the source image is made in the form of a matrix of elementary patterns. | 04-02-2015 |
20150093707 | MASK FORMING IMAGEABLE MATERIAL AND USE - An imageable material can be used to form a mask image for providing a relief image. This imageable material has a simplified structure and consists essentially of, in order: a transparent polymeric carrier sheet and a barrier layer comprising a first infrared radiation absorbing compound. A first ultraviolet radiation absorbing compound is provided in the transparent polymeric carrier sheet or the barrier layer. A non-silver halide thermally sensitive imageable layer is disposed on the barrier layer and comprises a second infrared radiation absorbing compound and a second ultraviolet radiation absorbing compound. A relief image is formed by imaging the imageable material to form an imaged mask material, exposing a relief-forming material with curing radiation through the imaged mask material to form exposed regions and non-exposed regions, and developing the imaged relief-forming material to form a relief image by removing its non-exposed regions. | 04-02-2015 |
20150140494 | ELECTROLESS PLATING METHOD USING BLEACHING - A conductive metal pattern is formed using a reactive polymer that comprises (1) pendant groups that are capable of providing pendant sulfonic acid groups upon exposure of the reactive polymer to radiation, and (2) pendant groups that are capable of reacting in the presence of the sulfonic acid groups to provide de-blocking and crosslinking in the reactive polymer. The polymeric layer is patternwise exposed to provide non-exposed regions and exposed regions comprising a polymer comprising pendant sulfonic acid groups. The polymeric layer is contacted with a reducing agent, followed by bleaching to remove surface amounts of the reducing agent in both non-exposed regions and exposed regions. The exposed regions are then contacted with electroless seed metal ions to oxidize the reducing agent and to form a pattern of corresponding electroless seed metal nuclei in the exposed regions. The corresponding electroless seed metal nuclei are then electrolessly plated with a conductive metal. | 05-21-2015 |
20150140495 | ELECTROLESS PLATING METHOD USING HALIDE - A conductive metal pattern is formed using a reactive polymer that can provide pendant sulfonic acid groups upon exposure to radiation, and (2) pendant groups that are capable of providing crosslinking. The polymeric layer is patternwise exposed to radiation to provide first exposed regions that are then contacted with electroless seed metal ions to form a pattern of electroless seed metal ions, followed by contact with a halide. At least some of the electroless seed metal halide can be exposed to form second exposed regions. The polymeric layer can be contacted with a reducing agent either: (i) to develop the electroless seed metal image in the second exposed regions, or (ii) to develop all of the electroless seed metal halide in the first exposed regions, and optionally contacted with a fixing agent. The electroless seed metal nuclei in the first exposed regions can be electrolessly plated with a conductive metal. | 05-21-2015 |
20150140496 | ELECTROLESS PLATING METHOD USING NON-REDUCING AGENT - A conductive metal pattern can be formed in a polymeric layer that has a reactive polymer that comprises (1) pendant groups that are capable of providing pendant sulfonic acid groups upon exposure, and (2) pendant groups that are capable of reacting in the presence of the sulfonic acid groups to provide crosslinking. The polymeric layer is patternwise exposed to provide non-exposed regions and exposed regions comprising a polymer comprising pendant sulfonic acid groups. The exposed regions are contacted with electroless seed metal ions to form a pattern of electroless seed metal ions. This pattern can be contacted with a non-reducing reagent that reacts with the electroless seed metal ions to form an electroless seed metal compound that has a pK | 05-21-2015 |
20160196968 | PATTERNING METHOD | 07-07-2016 |