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Including etching substrate

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430 - Radiation imagery chemistry: process, composition, or product thereof

430269000 - IMAGING AFFECTING PHYSICAL PROPERTY OF RADIATION SENSITIVE MATERIAL, OR PRODUCING NONPLANAR OR PRINTING SURFACE - PROCESS, COMPOSITION, OR PRODUCT

430322000 - Forming nonplanar surface

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DocumentTitleDate
20080274432SILICONE-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, SILICON-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD - A silicon-containing film is formed from a heat curable composition comprising (A-1) a silicon-containing compound obtained through hydrolytic condensation of a hydrolyzable silicon compound in the presence of an acid catalyst, (A-2) a silicon-containing compound obtained through hydrolytic condensation of a hydrolyzable silicon compound in the presence of a base catalyst, (B) a hydroxide or organic acid salt of Li, Na, K, Rb or Ce, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, (D) a cyclic ether-substituted alcohol, and (E) an organic solvent. The silicon-containing film ensures effective pattern formation, effective transfer of a photoresist pattern, and accurate processing of a substrate.11-06-2008
20110195362RESIST UNDERLAYER FILM COMPOSITION, PROCESS FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS AND FULLERENE DERIVATIVE - There is disclosed a resist underlayer film composition of a multilayer resist film used in lithography including (A) a fullerene derivative having a carboxyl group protected by a thermally labile group and (B) an organic solvent. There can be a resist underlayer film composition of a multilayer resist film used in lithography for forming a resist underlayer in which generation of wiggling in substrate etching can be highly suppressed and the poisoning problem in forming an upper layer pattern using a chemically amplified resist can be avoided, a process for forming the resist underlayer film, a patterning process and a fullerene derivative.08-11-2011
20090053656Process to form a mold of nanoimprint technique for making diffraction grating for DFB-LD - A process using the nanoimprint technique to form the diffraction grating for the DFB-LD is disclosed. The process includes (a) coating a resist for the EB exposure on a dummy substrate, (b) irradiating the resist as varying the acceleration voltage, (c) forming a resist pattern by developing the irradiated resist, (d) coating the SOG film on the patterned resist, (e) attaching the silica substrate on the cured SOG film, and (f) removing the dummy substrate with the resist from the SOG film and the silica substrate. Using the mold thus formed, the diffraction grating for the DFB-LD is formed by the nanoimprint technique.02-26-2009
20100112495Photoresist stripping solution and a method of stripping photoresists using the same - A photoresist stripping solution comprising (a) a carboxyl group-containing acidic compound, (b) at least one basic compound (for example, monoethanolamine, tetraalkylammonium) selected from among alkanolamines and specific quaternary ammonium hydroxides, (c) a sulfur-containing corrosion inhibitor and (d) water, and having a pH value of 3.5-5.5; and a method of stripping photoresists using the same are disclosed. The present invention provides a photoresist stripping solution which is excellent in the effect of protecting metal wirings (in particular, Cu wirings) from corrosion, never damages interlevel films, such as low dielectric layers or organic SOG layers, and shows excellent strippability of photoresist films and post-ashing residues.05-06-2010
20130040245Methods Of Processing Substrates - A method of processing a substrate includes forming first photoresist on a substrate. A portion of the first photoresist is selectively exposed to actinic energy and then the first photoresist is negative tone developed to remove an unexposed portion of the first photoresist. Second photoresist is formed on the substrate over the developed first photoresist. A portion of the second photoresist is selectively exposed to actinic energy and then the second photoresist is negative tone developed to remove an unexposed portion of the second photoresist and form a pattern on the substrate which comprises the developed first photoresist and the developed second photoresist. Other implementations are disclosed.02-14-2013
20090155731Method and system for reducing line edge roughness during pattern etching - A method of mitigating pattern defects, such as critical dimension (CD) bias and line-edge roughness (LER), during a pattern transfer process is described. The method comprises forming one or more layers on a substrate, forming a radiation sensitive mask layer on the one or more layers, and forming a pattern in the radiation sensitive mask layer using a lithographic process. Once the pattern is formed, the edges of the pattern are smoothed by exposing the pattern in the radiation sensitive mask layer to a fluorohydrocarbon-containing plasma. Thereafter, the smoothed pattern in the radiation sensitive mask layer is transferred to one or more of the one or more layers using one or more etching processes.06-18-2009
20100104986METHOD FOR FORMING PATTERN - In an exposure step, a combination of a first photomask and a second mask is used. The first mask has a real pattern corresponding to the pattern actually formed on the film to be processed, and a dummy pattern added for controlling pattern pitch in the first photomask within a prescribed range; and the second photomask has a pattern isolating a real-pattern-formed region from a dummy-pattern-formed region. In forming the pattern, after forming a film to be processed on a substrate, a first mask is formed on the film to be processed, by lithography, using the first photomask, and a second mask is formed on the film to be processed, by lithography, using the second photomask. Thereafter, the film to be processed is etched and removed using the first and second masks as masks to form the pattern.04-29-2010
20100104985COMPOUND FOR PHOTORESIST, PHOTORESIST LIQUID, AND ETCHING METHOD USING THE SAME - The present invention relates to a compound for photoresist, selected from the group consisting of a compound comprising an oxonol dye skeleton, a cyanine dye, a styryl dye, a compound comprising a merocyanine dye skeleton, a compound comprising a phthalocyanine dye skeleton, an azo compound, and a complex compound of an azo compound and a metal ion. The present invention further provides a photoresist liquid comprising at least one of the compound for photoresist and a method of etching a surface being processed using the photoresist liquid.04-29-2010
20100003621Etching method for forming a multi-step surface on a substrate - An etching method for forming a multi-step surface on a substrate includes: (1) coating a first photo-resist layer on a predetermined surface of the substrate; (2) coating a second photo-resist layer on the first photo-resist layer, the second photo-resist layer having a characterization opposite to that of the first photo-resist layer; (3) exposing the second photo-resist layer through a first mask so as to form a first removal region; (4) developing the second photo-resist layer to remove the first removal region; (5) exposing the first photo-resist layer through a second mask so as to form a second removal region; (6) developing the first photo-resist layer to remove the second removal region; and (7) etching the predetermined surface of the substrate and the multi-step pattern to form a multi-step surface on the substrate. The present invention also discloses an etching method for forming features on an ABS of a slider.01-07-2010
20090305172LITHOGRAPHY SIMULATION METHOD, COMPUTER PROGRAM PRODUCT, AND PATTERN FORMING METHOD - A lithography simulation method for estimating an optical image to be formed on a substrate when a mask pattern is transferred onto the substrate includes dividing the mask pattern into first calculation areas having sizes determined by a range affected by OPC, the range being obtained correspondingly to an exposure wavelength, a numerical aperture and an illumination shape which are used in the transferring the mask pattern onto the substrate, dividing the each of the first calculation areas into second calculation areas, calculating first electromagnetic field distributions formed by illuminating the mask pattern with exposure light and corresponding to the second calculation areas, obtaining second electromagnetic field distributions corresponding to the first calculation areas by synthesizing the first electromagnetic field distributions for each of the first calculation areas, and calculating the optical image to be formed on the substrate by using the second electromagnetic field distributions.12-10-2009
20090092932METHOD FOR FORMING PATTERN - In an exposure step, a combination of a first photomask and a second mask is used. The first mask has a real pattern corresponding to the pattern actually formed on the film to be processed, and a dummy pattern added for controlling pattern pitch in the first photomask within a prescribed range; and the second photomask has a pattern isolating a real-pattern-formed region from a dummy-pattern-formed region. In forming the pattern, after forming a film to be processed on a substrate, a first mask is formed on the film to be processed, by lithography, using the first photomask, and a second mask is formed on the film to be processed, by lithography, using the second photomask. Thereafter, the film to be processed is etched and removed using the first and second masks as masks to form the pattern.04-09-2009
20090092931Methods of forming a blocking pattern using a photosensitive composition and methods of manufacturing a semiconductor device - A method of forming a blocking pattern includes forming a preliminary blocking layer on first and second regions of a substrate, the preliminary blocking layer being formed of a photosensitive composition including a siloxane polymer, a cross-linking agent, a photoacid generator, and a thermal acid generator, selectively exposing to light a first portion of the preliminary blocking layer, the first portion of the preliminary blocking layer being formed on the first region of the substrate, such that a cross-linked pattern is formed on the first region of the substrate, and removing a second portion of the preliminary blocking layer, the second portion of the preliminary blocking layer being formed on the second region of the substrate.04-09-2009
20090092930PATTERN FORMATION METHOD - After forming an underlying layer film and an intermediate layer film are formed over a substrate, a resist pattern formed by first pattern exposure using a first resist film and second pattern exposure using a second resist film is transferred onto the intermediate layer film. Furthermore, the underlying layer film is etched using the intermediate layer pattern as a mask, thereby obtaining an underlying layer film pattern. The underlying layer film includes as an adduct a fluorine-based surfactant or inorganic nano particles and is provided with a resistance against oxygen-based plasma.04-09-2009
20090011374METHOD AND MATERIAL FOR FORMING HIGH ETCH RESISTANT DOUBLE EXPOSURE PATTERNS - The present invention includes a lithography method comprising forming a first patterned resist layer including at least one opening therein over a substrate. A protective layer is formed on the first patterned resist layer and the substrate whereby a reaction occurs at the interface between the first patterned resist layer and the protective layer to form a reaction layer over the first patterned resist layer. The non-reacted protective layer is then removed. Thereafter, a second patterned resist layer is formed over the substrate, wherein at least one portion of the second patterned resist layer is disposed within the at least one opening of the first patterned resist layer. The substrate is thereafter etched using the first and second patterned resist layers as a mask.01-08-2009
20090011373METHOD OF MANUFACTURING MECHANICAL AND MICROMECHANICAL PARTS - The invention concerns a method of manufacturing parts of a first material able to be etched, from a substrate including at least one superficial layer of said first material. The method includes the following steps: 01-08-2009
20130164689PHOTOMASK AND METHOD FOR FORMING OVERLAY MARK USING THE SAME - The present invention relates to a photomask and a method for forming an overlay mark in a substrate using the same. The photomask comprises a plurality of patterns. At least one of the patterns comprises a plurality of ring areas and a plurality of inner areas enclosed by the ring areas, wherein the light transmittancy of the ring areas is different from that of the inner areas. When the photomask is applied in a photolithography process, the formed overlay mark has a large thickness. Therefore, the contrast is high when a metrology process is performed, and it is easy to find the overlay mark.06-27-2013
20100291489EXPOSURE METHODS FOR FORMING PATTERNED LAYERS AND APPARATUS FOR PERFORMING THE SAME - Methods include providing an article including a substrate, a first layer supported by the substrate, and an interface between the substrate and the first layer. The substrate is substantially transparent to radiation at a wavelength λ and the first layer is formed from a photoresist. The methods include exposing the first layer to radiation by directing radiation at λ through the substrate to impinge on the interface so that the radiation experiences total internal reflection at the interface.11-18-2010
20110104616LINE WIDTH ROUGHNESS IMPROVEMENT WITH NOBLE GAS PLASMA - A method for forming a photoresist mask may comprise providing a ultra-violet (UV) producing gas to a vacuum chamber having a substrate, ionizing the UV producing gas to produce UV rays to irradiate the substrate, and etching features into the substrate through the photoresist mask.05-05-2011
20110294075PATTERNING METHOD - A patterning method of the present invention is described as follows. A mask layer and a patterned photoresist layer are formed on a target layer in sequence, wherein an etching rate of the mask layer is different from an etching rate of the target layer. A plurality of spacers is formed on sidewalls of the patterned photoresist layer respectively, wherein an etching rate of the spacers is different from the etching rate of the mask layer. The patterned photoresist layer is removed to form an opening between any two adjacent spacers. A portion of the mask layer is removed by using the spacers as a mask so as to form a patterned mask layer. A portion of the target layer is removed by using the patterned mask layer as a mask.12-01-2011
20090246713OXYGEN-CONTAINING PLASMA FLASH PROCESS FOR REDUCED MICRO-LOADING EFFECT AND CD BIAS - A method for transferring a feature pattern to a thin film on a substrate using a hard mask layer is described. The method comprises exposing the substrate to an oxygen-containing flash process after the feature pattern is transferred to the hard mask layer and before the feature pattern is transferred to the thin film.10-01-2009
20090280438METHOD OF FORMING PATTERN - A method of forming a pattern including: forming an underlayer film on a support using an underlayer film-forming material, forming a hard mask on the underlayer film using a silicon-based hard mask-forming material, forming a first resist film by applying a chemically amplified positive resist composition to the hard mask, forming a first resist pattern by selectively exposing the first resist film through a first mask pattern and then performing developing, forming a first pattern by etching the hard mask using the first resist pattern as a mask, forming a second resist film by applying a chemically amplified positive silicon-based resist composition to the first pattern and the underlayer film, forming a second resist pattern by selectively exposing the second resist film through a second mask pattern and then performing developing, and forming a second pattern by etching the underlayer film using the first pattern and the second resist pattern as a mask.11-12-2009
20090148796Lithographic Method - A method for providing a pattern on a substrate is disclosed. The method includes providing a first pattern in a first layer of photoresist and a first layer of bottom anti-reflective coating material on the substrate, etching the first pattern into the substrate, providing a second layer of photoresist and a second layer of bottom anti-reflective coating material on the substrate, providing a second pattern in the second layers of photoresist and bottom anti-reflective coating material, and etching the second pattern into the substrate, the first and second patterns on the substrate together defining the pattern.06-11-2009
20100266966Methods of forming a pattern using photoresist compositions - A method of forming a pattern and a photoresist composition, the method including forming a photoresist film on a substrate by coating a photoresist composition thereon, the photoresist composition including a polymerized photoresist additive, a polymer including an acid-labile protective group at a side chain, a photoacid generator, and a solvent; exposing the photoresist film; and forming a photoresist pattern by developing the photoresist film using an aqueous alkali developer, wherein the polymerized photoresist additive includes a hydrophilic repeating unit having an aliphatic hydrocarbon backbone and a side chain containing an oxygen heteroatom in a heterocyclic ring substituted with at least three hydroxyl groups, and a hydrophobic repeating unit having an aliphatic hydrocarbon backbone and a side chain containing a fluorinated aliphatic hydrocarbon group.10-21-2010
20090087799ANTIREFLECTIVE COATING COMPOSITION, ANTIREFLECTIVE COATING, AND PATTERNING PROCESS - A composition comprising (A) a polymer having an alcohol structure with plural fluorine atoms substituted at α- and α′-positions and having k=0.01-0.4 and (B) an aromatic ring-containing polymer having k=0.3-1.2 is used to form an antireflective coating. The ARC-forming composition can be deposited by the same process as prior art ARCs. The resulting ARC is effective in preventing reflection of exposure light in photolithography and has an acceptable dry etching rate.04-02-2009
20100086877PATTERN FORMING METHOD AND PATTERN FORM - One embodiment of the present invention is a pattern forming method for forming a fine three-dimensional structural pattern, including: forming a resist material film on a substrate having a projecting pattern on a step in such a manner as to cover at least a marginal portion of the projecting pattern such that the resist material film is heaped on the projecting pattern in conformity with the step; reducing the heaped resist material film formed by first etching until the marginal portion of the projecting pattern is exposed from an edge of the heaped resist material film; and forming an upper projecting pattern according to the projecting pattern in a self-aligning manner by second etching on the marginal portion of the exposed projecting pattern by using the reduced resist material film as a mask.04-08-2010
20100081094MASK PATTERN FORMING METHOD, FINE PATTERN FORMING METHOD, AND FILM DEPOSITION APPARATUS - In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.04-01-2010
20080206686METHOD OF FORMING FINE PATTERNS OF SEMICONDUCTOR DEVICE - A method of forming fine patterns on a semiconductor substrate includes forming a first pattern, including first line patterns having a feature size F and an arbitrary pitch P, and forming a second pattern, including second line patterns disposed between adjacent first line patterns, to form a fine pattern having a half pitch P/2, the first and second line patterns being repeated in the first direction. A gap is formed in at least one first line pattern in a second direction, perpendicular to the first direction, to connect second line patterns positioned on each side of the first line pattern through the gap. At least one jog pattern, extending in the first direction, is formed from at least one first line pattern adjacent to the connected second line patterns. The jog pattern causes a gap in at least one of the connected second line patterns in the second direction.08-28-2008
20090274982METHOD OF MAKING A SEMICONDUCTOR DEVICE USING NEGATIVE PHOTORESIST - Negative photoresist over an insulating layer is exposed to radiation according to a pattern for an opening in the insulating layer for filling conductive material. A post of the negative photoresist is left over the location where the opening in the insulating layer is to be formed. A developable hard mask is formed over the post by a spin-on process so that the hard mask over the post is much thinner than directly over the insulating layer. An etch back is performed to remove the hard mask from over the post so that the post of negative photoresist is thus exposed. The post is removed to form an opening in the hard mask. An etch is performed to form the opening in the insulating layer aligned to the opening in the hard mask. The opening in the insulating layer is filled with the conductive material.11-05-2009
20090104570APERTURED MEDIA EMBELLISHING TEMPLATE AND SYSTEM AND METHOD USING SAME - A multi-function media embellishing template and a system and method of embellishing media with the template is provided. The template includes a body having a media abutment surface and an aperture in the media abutment surface extending through the template, and an embellishing wall extending from the media abutment surface and terminating in an embellishing surface. The media embellishing template can be formed by exposing first and second sides of a template blank not covered by a resist to etchant, etching the surface of the first side to form a media abutment surface and an embellishing wall extending from the media abutment surface and terminating in an embellishing surface, and etching the surface of the second side not covered by the resist to form at least one aperture extending through the template.04-23-2009
20090042146Method of forming fine patterns using a block copolymer - A method of patterning a substrate includes processing first regions of the substrate to form a first pattern, the first regions defining a second region between adjacent first regions, arranging a block copolymer on the first and second regions, the block copolymer including a first component and a second component, the first component of the block copolymer being aligned on the first regions, and selectively removing one of the first component and the second component of the block copolymer to form a second pattern having a pitch that is less than a pitch of a first region and an adjacent second region.02-12-2009
20110171585Photolithography Method - A photolithography method is provided which includes: arranging a layout topography in a first mask and a second mask in such a way that at least a layout pattern of the layout topography is defined by an overlap area. The overlap area is formed when at least a first pattern of the first mask and at least a second pattern of the second mask are projected on a common surface and are overlapped to each other. Critical dimensions of the first mask and the second mask are larger than a resolution of a photolithography machine for preventing from bridging.07-14-2011
20100136490MULTI-SCALE CANTILEVER STRUCTURES HAVING NANO SIZED HOLES AND METHOD OF PREPARING THE SAME - Provided are a multi-scale cantilever structure having nano-sized holes prepared by anodic oxidation and a method of preparing the same. The multi-scale cantilever structure is prepared using anodic oxidation and electro-polishing so that a manufacturing process is simple and a manufacturing cost is inexpensive. In addition, the multi-scale cantilever structure has a porous structure having a plurality of nano-sized holes inside thereof, and thus a surface area of the cantilever structure can be maximized. Therefore, when the cantilever structure is used in a sensor, the sensor can have improved sensitivity and selectivity.06-03-2010
20080241763METHOD OF FORMING A DUAL DAMASCENE STRUCTURE UTILIZING A DEVELOPABLE ANTI-REFLECTIVE COATING - A method of patterning a structure in a thin film on a substrate is described. A film stack on the substrate includes the thin film on the substrate, a developable anti-reflective coating (ARC) layer on the thin film, and a first photo-resist layer on the developable ARC layer. The first photo-resist layer and the developable ARC layer are imaged with a first image pattern and developed to form the first image pattern in the first photo-resist layer and the developable ARC layer. Thereafter, the first photo-resist layer is removed, and the developable ARC layer is modified by thermal treatment. A second photo-resist layer is then formed on the modified ARC layer, and the second photo-resist layer is imaged with a second image pattern and developed to form the second image pattern in the second photo-resist layer. The first and second image patterns are then transferred to the thin film.10-02-2008
20080286698Semiconductor device manufacturing methods - Methods for manufacturing semiconductor devices are disclosed. One preferred embodiment is a method of processing a semiconductor device. The method includes providing a workpiece having a material layer to be patterned disposed thereon. A masking material is formed over the material layer of the workpiece. The masking material includes a lower portion and an upper portion disposed over the lower portion. The upper portion of the masking material is patterned with a first pattern. An additional substance is introduced and the lower portion of the masking material is patterned. The masking material and the additional substance are used to pattern the material layer of the workpiece.11-20-2008
20100035191METHOD FOR PATTERNING MATERIAL LAYER - The invention is directed to a method for patterning a material layer. The method comprises steps of providing a material layer. The material layer has a first hard mask layer and a second hard mask layer successively formed thereon. Then, the second hard mask layer is patterned to form a plurality of openings therein. A patterned photoresist layer is formed to cover the second hard mask layer and the patterned photoresist layer exposes a portion of the openings. The first hard mask layer with the patterned photoresist layer and the patterned second hard mask layer together as a mask. Then, the patterned photoresist layer and the patterned second hard mask layer are removed. The material layer is patterned with the patterned first hard mask layer as a mask.02-11-2010
20080305441Hardmask composition having antirelective properties and method of patterning material on susbstrate using the same - A hardmask composition includes an organic solvent and one or more aromatic ring-containing polymers represented by Formulae 1, 2 and 3:12-11-2008
20090311633PATTERN FORMING METHOD - A pattern forming method includes a step of forming a photosensitive organic material layer by providing, on a substrate, a photosensitive organic material which is protected by a hydrophobic photodegradable group and is capable of generating a hydrophilic group selected from the group consisting of amino group, hydroxyl group, carboxyl group, and sulfo group by light irradiation; a step of selectively exposing the photosensitive organic material layer to light in a pattern to generate the hydrophilic group at an exposed portion; a step of providing a block polymer having a hydrophilic segment and a hydrophobic segment, on the photosensitive organic material layer after the exposure, to separate segments of the block polymer into the hydrophilic segment at a portion where the hydrophilic group generated by the exposure is present and the hydrophobic segment at a portion where the hydrophilic group is not present; and a step of removing one of the separated segments to form a pattern of the other segment.12-17-2009
20090117497METHOD OF FORMING PATTERN USING FINE PITCH HARD MASK - A method of forming a fine pattern of a semiconductor device using a fine pitch hard mask is provided. A first hard mask pattern including first line patterns formed on an etch target layer of a substrate with a first pitch is formed. A first layer including a top surface where a recess is formed between adjacent first line patterns is formed. A second hard mask pattern including second line patterns within the recess is formed. An anisotropic etching process is performed on the first layer using the first and the second line patterns as an etch mask. Another anisotropic etching process is performed on the etch target layer using the first and the second hard mask patterns as an etch mask.05-07-2009
20110269077METHOD AND APPARATUS FOR MEASUREMENT AND CONTROL OF PHOTOMASK TO SUBSTRATE ALIGNMENT - A method, structure, system of aligning a substrate to a photomask. The method comprising: directing light through a clear region of the photomask in a photolithography tool, through a lens of the tool and onto a set of at least three diffraction minor arrays on the substrate, each diffraction minor array of the set of at least three diffraction minor arrays comprising a single row of minors, all mirrors in any particular diffraction minor array spaced apart a same distance, minors in different diffraction minor arrays spaced apart different distances; measuring an intensity of light diffracted from the set of at least three diffraction mirror arrays onto an array of photo detectors; and adjusting a temperature of the photomask or photomask and lens based on the measured intensity of light.11-03-2011
20110269076SURFACE MODIFYING MATERIAL, METHOD OF FORMING RESIST PATTERN, AND METHOD OF FORMING PATTERN - A surface modifying material for forming a surface modifying layer provided between a substrate and a resist film, the surface modifying material including an epoxy resin having a weight average molecular weight of 1,000 to 50,000; 11-03-2011
20080318169PATTERN FORMING METHOD - A pattern forming method according to an embodiment of the present invention includes: forming a plurality of pole-like structures above a film to be processed; forming a sidewall film on each of sidewalls of the plurality of pole-like structures so as to form a depression portion in a region surrounded by corresponding ones of the plurality of pole-like structures; removing the sidewall film formed above each of the plurality of pole-like structures and in a bottom portion of the depression portion, respectively, by performing etching; and selectively etching the plurality of pole-like structures with the sidewall film being left.12-25-2008
20090081595PATTERNING PROCESS - A pattern is formed through positive/negative reversal by coating a chemically amplified positive resist composition comprising an acid labile group-bearing resin, a photoacid generator, and an organic solvent onto a substrate, prebaking the resist composition, exposing the resist film to high-energy radiation, post-exposure heating, and developing the exposed resist film with an alkaline developer to form a positive pattern; irradiating or heating the positive pattern to facilitate elimination of acid labile groups and crosslinking for improving alkali solubility and imparting solvent resistance; coating a reversal film-forming composition thereon to form a reversal film; and applying an alkaline wet etchant thereto for dissolving away the positive pattern.03-26-2009
20090117495METHOD FOR FORMING A PATTERN IN A SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A FLASH MEMORY DEVICE - A pattern formation method of a semiconductor device, and to a manufacturing method of a flash memory, in which spacer patterning technology is performed while two hard mask layers having a different etching characteristics are used, such that the patterning can be performed by using only a spacer as a mask in the region which requires a small pattern. Additionally, the patterning can be performed by using a hard mask layer pattern and the spacer as a mask in a region which requires a large pattern. Therefore, the pattern formation method of the invention can be used to form a semiconductor device with patterns having various sizes using just a single patterning.05-07-2009
20110229828AROMATIC RING CONTAINING POLYMER, UNDERLAYER COMPOSITION INCLUDING THE SAME, AND ASSOCIATED METHODS - An aromatic ring-containing polymer, an underlayer composition including the same, and associated methods, the aromatic ring-containing polymer including a group represented by one of the following Chemical Formulae 1-1, 1-2, 2-1, and 2-2:09-22-2011
20080268381Pattern forming method performing multiple exposure so that total amount of exposure exceeds threshold - A pattern forming method includes forming a resist film on a target film to be processed, which is formed on a substrate; and forming a basic pattern part in the resist film by multiple exposure using photomasks, wherein each exposure process is performed at an amount of exposure smaller than a threshold assigned to the resist film; and the resist film is developed after the total sum of the amounts of exposure through a plurality of exposure processes exceeds the threshold, so that the basic pattern part including a hole shape, which corresponds to each area where the total amount of exposure through the exposure processes via the photomasks exceeds the threshold, is formed in the resist film. The method also includes performing etching via the basic pattern part so as to form a desired pattern in the target film.10-30-2008
20090117496METHOD FOR TREATING SURFACE OF ELEMENT - A method for treating a surface of an element includes the steps of providing a photo-sensitive and flexible thin film, providing a planar photomask having a micro-structural pattern, transferring the micro-structural pattern to the thin film, attaching the thin film to the surface of the element and partially exposing a portion of the element, processing the exposed portion of the element, and removing the thin film to form a micro-structure on the surface of the element.05-07-2009
20100190114TOPOGRAPHY BASED PATTERNING - A mask having features formed by self-organizing material, such as diblock copolymers, is formed on a partially fabricated integrated circuit. Initially, a copolymer template, or seed layer, is formed on the surface of the partially fabricated integrated circuit. To form the seed layer, diblock copolymers, composed of two immiscible blocks, are deposited in the space between copolymer alignment guides. The copolymers are made to self-organize, with the guides guiding the self-organization and with each block aggregating with other blocks of the same type, thereby forming the seed layer. Next, additional, supplemental diblock copolymers are deposited over the seed layer. The copolymers in the seed layer guide self-organization of the supplemental copolymers, thereby vertically extending the pattern formed by the copolymers in the seed layer. Block species are subsequently selectively removed to form a pattern of voids defined by the remaining block species, which form a mask that can be used to pattern an underlying substrate. The supplemental copolymers augment the height of the copolymers in the seed layer, thereby facilitating the use of the copolymers for patterning the underlying substrate.07-29-2010
20100178616METHOD OF MAKING A ROUGH SUBSTRATE - A method of making a rough substrate includes: (a) forming a first oxide layer; (b) coating a photoresist layer; (c) exposing and developing the photoresist layer; (d) etching parts of the first oxide layer such that parts of the first oxide layer are formed into a plurality of sacrificial protrusions; (e) removing the photoresist regions; (f) depositing on the substrate layer and the sacrificial protrusions a second oxide layer; (g) etching the second oxide layer so as to leave portions of the second oxide layer; and (h) etching additionally the sacrificial protrusions, the substrate layer, and the portions of the second oxide layer, thereby producing a plurality of flat recess bottom faces, and substrate protrusions.07-15-2010
20100178615METHOD FOR REDUCING TIP-TO-TIP SPACING BETWEEN LINES - This invention provides a method for reducing tip-to-tip spacing between lines using a combination of photolithographic and copolymer self-assembling lithographic techniques. A mask layer is first formed over a substrate with a line structure. A trench opening of a width d is created in the mask layer. A layer of a self-assembling block copolymer is then applied over the mask layer. The block copolymer layer is annealed to form a single unit polymer block of a width or a diameter w which is smaller than d inside the trench opening. The single unit polymer block is selectively removed to form a single opening of a width or a diameter w inside the trench opening. An etch transfer process is performed using the single opening as a mask to form an opening in the line structure in the substrate.07-15-2010
20100178618PATTERNING PROCESS - A pattern is formed by coating a chemically amplified positive resist composition comprising a resin comprising acid labile group-containing recurring units and a photoacid generator onto a substrate, drying to form a resist film, exposing the resist film to high-energy radiation through a phase shift mask having a lattice-like array of shifters, PEB, developing to form a positive pattern, illuminating or heating the positive pattern to eliminate acid labile groups for increasing alkaline solubility and to induce crosslinking for imparting solvent resistance, coating a reversal film, and dissolving away the positive pattern in an alkaline wet etchant to form a pattern by way of positive/negative reversal.07-15-2010
20110059406PATTERN FORMING METHOD - According to one embodiment, a pattern forming method is disclosed. The method can include selectively providing a curing agent to a pattern in a template, contacting the template provided the curing agent to a substrate, irradiating the curing agent with light where the template and the substrate are contacted each other to harden the curing agent, demolding the template from the substrate to form a curing agent pattern on the substrate, and etching the substrate on a basis of the curing agent pattern.03-10-2011
20110059405SUBSTRATE PROCESSING METHOD - A substrate processing method, includes: forming a resist film above a substrate; exposing the resist film; developing the resist film using a developing fluid after the exposing of the resist film; cleaning the resist film using a rinsing fluid after the developing of the resist film; and drying the resist film in a processing chamber after the cleaning of the resist film, inside the processing chamber being an atmosphere including an ion, the atmosphere including the ion being caused by introducing a gas including the ion produced externally to the processing chamber into the processing chamber.03-10-2011
20100221670PATTERN FORMATION METHOD - A method for forming a finer hole or line pattern including the step of sequentially depositing a first mask layer (09-02-2010
20100227280Method of Measuring a Characteristic - During a multiple patterning process every n09-09-2010
20100233633ENGINEERING BORON-RICH FILMS FOR LITHOGRAPHIC MASK APPLICATIONS - Methods for processing a substrate with a boron rich film are provided. A patterned layer of boron rich material is deposited on a substrate and can be used as an etch stop. By varying the chemical composition, the selectivity and etch rate of the boron rich material can be optimized for different etch chemistries. The boron rich materials can be deposited over a layer stack substrate in multiple layers and etched in a pattern. The exposed layer stack can then be etched with multiple etch chemistries. Each of the boron rich layers can have a different chemical composition that is optimized for the multiple etch chemistries.09-16-2010
20100255427CONFORMAL PHOTO-SENSITIVE LAYER AND PROCESS - The present disclosure provides a method for etching a substrate. The method includes forming a patterned photo-sensitive layer on the substrate; applying an etching chemical fluid to the substrate, wherein the patterned photo-sensitive layer includes an adhesion promoter and/or hydrophobic additive; removing the etching chemical fluid; and removing the resist pattern.10-07-2010
20090208880PROCESS SEQUENCE FOR FORMATION OF PATTERNED HARD MASK FILM (RFP) WITHOUT NEED FOR PHOTORESIST OR DRY ETCH - Method and systems for patterning a hardmask film using ultraviolet light is disclosed according to one embodiment of the invention. Embodiments of the present invention alleviate the processing problem of depositing and etching photoresist in order to produce a hardmask pattern. A hardmask layer, such as, silicon oxide, is first deposited on a substrate within a deposition chamber. In some cases, the hardmask layer is baked or annealed following deposition. After which, portions of the hardmask layer are exposed with ultraviolet light. The ultraviolet light produces a pattern of exposed and unexposed portions of hardmask material. Following the exposure, an etching process, such as a wet etch, may occur that removes the unexposed portions of the hardmask. Following the etch, the hardmask may be annealed, baked or subjected to a plasma treatment.08-20-2009
20100221671PRINTHEAD INTEGRATED CIRCUIT ATTACHMENT FILM - A method of fabricating a film used in attaching a printhead integrated circuit to an ink supply manifold is disclosed. An adhesive polymeric film having a protective liner is provided. Photoresist is then deposited onto the protective liner, and the photoresist is photopatterned. Ink supply holes are etched through the adhesive polymeric film and the protective liner, with the photoresist acting as a mask for the etching. Finally, the protective liner including the photoresist is removed from the adhesive polymeric film after the etching step is complete.09-02-2010
20090208881IMMERSION ULTRAVIOLET PHOTOLITHOGRAPHY PROCESS - The invention relates to ultraviolet photolithography at 193 nanometres or 157 nanometres. To maximize resolution, optics having a very high numerical aperture are used, but without photoresists of sufficient index to best benefit from this high numerical aperture. It is proposed to use standard resists (PR) but with a thickness that is so small that they will be exposed locally by evanescent waves in the case of total internal reflection of the rays at very high angle of incidence, despite the presence of an immersion liquid (LQ) between the projection optics (OL) and the photoresist (PR).08-20-2009
20090258321Light absorbent and organic antireflection coating composition containing the same - The present invention relates to a light absorbent for organic anti-reflection coating formation, and an organic anti-reflection film composition containing the same. The light absorbent for organic anti-reflection film formation according to the present invention is a compound of the following formula (1a), a compound of the following formula (1b), a mixture of compounds of the formulas (1a) and (1b), or a compound of formula (2):10-15-2009
20110244398Patterning method - A patterning method is provided. First, a first mask layer, a second mask layer and a patterned photoresist layer are sequentially formed on a target layer. Thereafter, the second mask layer is etched by using the patterned photoresist layer as a mask, so as to form a patterned second mask layer. Afterwards, a trimming process is performed to the patterned second mask layer. Further, the first mask layer is etched by using the trimmed patterned second mask layer as a mask, so as to form a patterned first mask layer. The patterned photoresist layer is then removed. Next, the target layer is etched by using the patterned first mask layer as a mask.10-06-2011
20110129781Methods of forming a pattern using photoresist compositions - In a photoresist composition, methods of forming a pattern using the same, and methods of manufacturing a semiconductor device using the same A photoresist film may be formed on a substrate by coating a photoresist composition including a polymer and a solvent. The polymer includes a first repeating unit and a second repeating unit. The first repeating unit has a diazoketo group and a second repeating unit has a group containing silicon. A photoresist pattern is formed by partially exposing the photoresist film and developing the photoresist film. A pattern having an improved etching resistance and uniformity of critical dimension is formed.06-02-2011
20090081596Metal photoetching product and production method thereof - A metal photoetching product comprising at least one large cavity of minor axis W03-26-2009
20090311635DOUBLE EXPOSURE PATTERNING WITH CARBONACEOUS HARDMASK - Methods to pattern features in a substrate layer by exposing a photoresist layer more than once. In one embodiment, a single reticle may be exposed more than once with an overlay offset implemented between successive exposures to reduce the half pitch of the reticle. In particular embodiments, these methods may be employed to reduce the half pitch of the features printed with 65 nm generation lithography equipment to achieve 45 nm lithography generation CD and pitch performance.12-17-2009
20100055620NANOSTRUCTURE FABRICATION - Techniques for fabricating nanostructures are provided. In one embodiment a method includes forming a multilayer stack including at least one pair of a structural layer and a sacrificial layer on a substrate, patterning the multilayer stack in order to fabricate a nanostructure, and releasing the nanostructure from the patterned multilayer stack.03-04-2010
20110070545High normality solution for removing freeze material in lithographic applications - A method for patterning a substrate is described. The method comprises forming a layer of radiation-sensitive material on the substrate, preparing a pattern in the layer of radiation-sensitive material, and applying a chemical freeze layer over the layer of radiation-sensitive material to form a frozen layer of radiation-sensitive material. Thereafter, the method comprises stripping the chemical freeze layer using a high normality strip solution to preserve the pattern in the frozen layer of radiation-sensitive material, wherein the high normality strip solution contains an active solute having a normality (N) greater than 0.26.03-24-2011
20110076623METHOD FOR REWORKING SILICON-CONTAINING ARC LAYERS ON A SUBSTRATE - A method is provided for reworking film structures containing silicon-containing anti-reflective coating (SiARC) layers in semiconductor device manufacturing. The method includes providing a substrate containing a film stack that includes SiARC layer thereon, and a resist pattern formed on the SiARC layer. The method further includes removing the resist pattern from the SiARC layer, exposing the SiARC layer to process gas containing ozone (O03-31-2011
20100266965Etch-Enhanced Technique for Lift-Off Patterning - An enhanced process forming a material pattern on a substrate deposits the material anisotropically on resist material patterned to correspond to an image of the material pattern. The material is etched isotropically to remove a thickness of the material on sidewalls of the resist pattern while leaving the material on a top surface of the resist pattern and portions of the surface of the substrate. The resist pattern is removed by dissolution thereby lifting-off the material on the top surface of the resist pattern while leaving the material on the substrate surface as the material pattern. Alternately, a first material layer is deposited on the resist pattern and a second material layer is deposited and planarized. The second material layer is etched exposing the first material while leaving the second material in features of the resist pattern. The first material and the resist are removed leaving the first material pattern.10-21-2010
20110256485ETCHANT COMPOSITION, PATTERNING CONDUCTIVE LAYER AND MANUFACTURING FLAT PANEL, DISPLAY DEVICE USING THE SAME - An etchant composition that allows simplification and optimization of semiconductor manufacturing process is presented, along with a method of patterning a conductive layer using the etchant and a method of manufacturing a flat panel display using the etchant. The etchant includes nitric acid, phosphoric acid, acetic acid, and an acetate compound in addition to water.10-20-2011
20110053096PHOTOMASKS, METHODS OF EXPOSING A SUBSTRATE TO LIGHT, METHODS OF FORMING A PATTERN, AND METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE - The method of forming a pattern includes forming a first photosensitive layer pattern including a first pattern in a first region of a substrate and a second pattern in a second region of the substrate, by performing a first photolithography process using a photomask having a first mask region and a second mask region. The first pattern is transferred from the first mask region, and the second pattern is transferred from the second mask region. The method further includes forming a second photosensitive layer pattern including a third pattern in the second region of the substrate and a fourth pattern in the first region of the substrate, by performing a second photolithography process using the photomask. The third pattern is transferred from the first mask region, and the fourth pattern is transferred from the second mask region03-03-2011
20110027722AROMATIC RING-CONTAINING POLYMER FOR RESIST UNDERLAYER, RESIST UNDERLAYER COMPOSITION INCLUDING THE SAME, AND METHOD OF PATTERNING DEVICE USING THE SAME - An aromatic ring-containing polymer for a resist underlayer, the polymer including a unit represented by the following Chemical Formula 1:02-03-2011
20100167214Method of forming fine pattern using block copolymer - A method of forming a fine pattern includes forming an organic guide layer on a substrate, forming a photoresist pattern on the organic guide layer, the photoresist pattern including a plurality of openings exposing portions of the organic guide layer, forming a material layer on the exposed portions of the organic guide layer and on the photoresist pattern, the material layer including block copolymers, and rearranging the material layer through phase separation of the block copolymers into a fine pattern layer, such that the fine pattern layer includes a plurality of first blocks and a plurality of second blocks arranged in an alternating pattern, the plurality of first blocks and the plurality of the second blocks having different repeating units of the block copolymers.07-01-2010
20110177459RESIST UNDERLAYER FILM-FORMING COMPOSITION, PROCESS FOR FORMING RESIST UNDERLAYER FILM AND PATTERNING PROCESS - There is disclosed a resist underlayer film-forming composition comprising, at least: a resin (A) obtained by condensing a compound represented by the following general formula (1) with a compound represented by the following general formula (2) by the aid of an acid catalyst; a compound (B) represented by the general formula (1); a fullerene compound (C); and an organic solvent. There can be a resist underlayer film composition in a multi-layer resist film to be used in lithography, which underlayer film is excellent in property for filling up a height difference of a substrate, possesses a solvent resistance, and is not only capable of preventing occurrence of twisting during etching of a substrate, but also capable of providing an excellently decreased pattern roughness; a process for forming a resist underlayer film by using the composition; and a patterning process.07-21-2011
20100159402METHOD, PROGRAM AND SYSTEM FOR PROCESSING SUBSTRATE - The invention relates to a method for processing a substrate on which a target film is formed. The method includes forming a first film on the target layer; forming a second film on the first film, the second film being photosensitive; patterning the second film with a photolithography process; removing a portion of the first film selectively using the second film as a mask; removing a portion of the target film selectively using the second film as a mask; reducing the width of first film to an intended width by removing sidewall portions thereof; forming a third film at least on the first film and on the top of the target film; removing the first film and the second film; and removing a portion of the target film using the third film as a mask.06-24-2010
20100068656HIGH ETCH RESISTANT MATERIAL FOR DOUBLE PATTERNING - The present invention includes a lithography method comprising forming a first patterned insist layer including at least one opening therein over a substrate. A water-soluble polymer layer is formed over the first patterned resist layer and the substrate, whereby a reaction occurs at the interface of the first patterned resist layer and the water-soluble polymer layer. The non-reacted water-soluble polymer layer is removed. Thereafter, a second patterned resist layer is formed over the substrate, wherein at least one portion of the second patterned resist layer is disposed within the at least one opening of the first patterned resist layer or abuts at least one portion of the first patterned resist layer. The substrate is thereafter etched using the first and second patterned resist layers as a mask.03-18-2010
20100068657METHOD OF PATTERNING TARGET LAYER ON SUBSTRATE - A method of patterning a target layer on a substrate is described. A patterned photoresist layer is formed over the target layer, wherein the patterned photoresist layer has unexposed parts as separate islands and each unexposed part has a low proton concentration at least in its sidewalls. Acid-crosslinked polymer layers are formed only on the sidewalls of each unexposed part. A flood exposure step is performed to the substrate. A baking step is performed to the patterned photoresist layer. A development step is performed to remove the previously unexposed parts. The target layer is etched with the acid-crosslinked polymer layers as a mask.03-18-2010
20110189616PATTERN FORMATION METHOD - After forming a lower layer film, an intermediate layer film and a first resist film on a substrate, a first resist pattern is formed by performing first exposure. Then, after a first intermediate layer pattern is formed by transferring the first resist pattern onto the intermediate layer film, a second resist film is formed thereon, and a second resist pattern is formed by performing second exposure. Thereafter, a second intermediate layer pattern is formed by transferring the second resist pattern onto the intermediate layer film. After removing the second resist film, the lower layer film is etched by using the second intermediate layer pattern as a mask, so as to form a lower layer pattern.08-04-2011
20100021850PATTERN FORMING METHOD - A pattern forming method has forming a first resist film on a processed film, patterning the first resist film into a first resist pattern, forming a first film containing a photo acid generator so as to cover the first resist pattern, forming a second resist film so as to cover the first film, irradiating a predetermined region of the second resist film with exposure light, heating the first film and the second resist film, performing a development process, removing the second resist film of the predetermined region and forming a second resist pattern while the first film is left, and etching the processed film with the first resist pattern and the second resist pattern as a mask.01-28-2010
20090311634METHOD OF DOUBLE PATTERNING USING SACRIFICIAL STRUCTURE - A method of patterning a thin film on a substrate is described. The method includes forming a sacrificial structure over the thin film, and forming a photo-resist layer over the sacrificial structure. The sacrificial structure has anti-reflective properties, comprises silicon and is capable of withstanding the photo-resist layer removal process and the stress induced during the spacer layer deposition. Thereafter, an image pattern is formed in one or both of the sacrificial structure or the photo-resist layer. A spacer layer is then conformally deposited over the pattern. The spacer layer is etched back to remove horizontal portions while substantially leaving vertical portions. The remaining photo-resist and/or sacrificial structure that is not overlaid with the etched-back spacer layer is removed leaving spacers that are utilized to transfer another pattern to the thin film.12-17-2009
20090130606PHOTORESIST DEVELOPER AND METHOD FOR FABRICATING SUBSTRATE BY USING THE DEVELOPER THEREOF - A photoresist developer including a basic aqueous solution containing 0.5˜10 mass % of a particular nonionic surfactant and 0.01-10 mass % of particular ammonium compound, the photoresist developer makes it possible to form a favorable resist pattern with out causing scum even when developing thick photoresists.05-21-2009
20090111061Methods of Minimizing Etch Undercut and Providing Clean Metal Liftoff - A method of minimizing etch undercut and providing clean metal liftoff in subsequent metal deposition is provided. In one embodiment a bilayer resist mask is employed and used for etching of underlying substrate material and subsequent metal liftoff. In one embodiment, the top layer resist such as positive photoresist which is sensitive to selected range of energy, such as near UV or violet light, is first patterned by standard photolithography techniques and resist development in a first developer to expose portion of a bottom resist layer which is sensitive to a different selected range of energy, such as deep UV light. The exposed portion of the bottom layer resist is then removed by anisotropic etching such as oxygen reactive ion etching using the top layer resist as the etch mask to expose portion of the underlying substrate. This minimizes the undercut in the bottom resist around the top photoresist opening. The resultant patterned bilayer resist stack is then used as the etch mask for the subsequent etching of the exposed portion of the underlying substrate material. Because there is no undercut in the bottom resist layer, the etch undercut in the substrate material is also minimized relative to the edges of the top photoresist opening.04-30-2009
20120301833METHOD OF REDUCING MICROLOADING EFFECT - The present invention provides a method of reducing microloading effect by using a photoresist layer as a buffer. The method includes: providing a substrate defined with a dense region and an isolated region. Then, a dense feature pattern and an isolated feature pattern are formed on the dense region and the isolated region respectively. After that, a photoresist layer is formed to cover the isolated region. Finally, the substrate and the photoresist layer are etched by taking the dense feature pattern and the isolated feature pattern as a mask.11-29-2012
20090011372SILICON-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, SILICON-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD - A silicon-containing film is formed from a heat curable composition comprising (A) a silicon-containing compound obtained through hydrolytic condensation of a hydrolyzable silicon compound in the presence of an acid catalyst, (B) a hydroxide or organic acid salt of Li, Na, K, Rb or Ce, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, (D) a cyclic ether-substituted alcohol, and (E) an organic solvent. The silicon-containing film ensures effective pattern formation, effective transfer of a photoresist pattern, and accurate processing of a substrate.01-08-2009
20120208130METHOD FOR MANUFACTURING STRUCTURE - A method for manufacturing a structure includes forming a layer of photosensitive material above a substrate, disposing a mask above the layer of photosensitive material, shielding a portion of the layer of photosensitive material other than a first region of the layer of photosensitive material, exposing the first region, moving the mask along a surface of the layer of photosensitive material, shielding a portion of the layer of photosensitive material other than a second region that is a portion of the first region and a third region that is adjacent to the second region and is a portion of the region shielded in the step, and exposing the second region and the third region, and developing the layer of photosensitive material to form surfaces in the layer of photosensitive material at different heights along a direction in which the mask is moved.08-16-2012
20090286188Patterning process - The present invention provides a patterning process, in which a resistance with regard to an organic solvent used for a composition for formation of a reverse film is rendered to a positive pattern to the degree of necessity and yet solubility into an alkaline etching liquid is secured, thereby enabling to finally obtain a negative image by a positive-negative reversal by performing a wet etching using an alkaline etching liquid.11-19-2009
20100178617PATTERNING PROCESS - A pattern is formed by coating a chemically amplified positive resist composition comprising a resin comprising acid labile group-containing recurring units and a photoacid generator onto a substrate, drying to form a resist film, exposing the resist film to high-energy radiation, PEB, developing to form a positive pattern, illuminating or heating the positive pattern to eliminate acid labile groups for increasing alkaline solubility and to induce crosslinking for imparting solvent resistance, coating a reversal film, forming a space pattern, and shrinking the space pattern.07-15-2010
20120122035PATTERNING METHOD AND METHOD FOR FABRICATING DUAL DAMASCENE OPENING - A patterning method and a method for fabricating a dual damascene opening are described, wherein the patterning method includes following steps. An organic layer, a silicon-containing mask layer and a patterned photoresist layer are formed on a material layer in sequence. The silicon-containing mask layer is removed using the patterned photoresist layer as a mask. A reactive gas is used for conducting an etching step so as to remove the organic layer with the silicon-containing mask layer as a mask, wherein the reactive gas contains no oxygen species. The material layer is removed using the organic layer as a mask, so that an opening is formed in the material layer. The organic layer is then removed.05-17-2012
20090130607ROLL-TO-ROLL PATTERNING OF TRANSPARENT AND METALLIC LAYERS - Systems and methods are disclosed by which patterns of various materials can be formed on flexible substrates by a continuous roll-to-roll manufacturing process. The patterns may include metallic, transparent conductive, or non-metallic elements with lateral dimensions including in the range from below 100 nanometers to millimeters and with thickness dimensions including the range from tens of Angstroms to greater than 10,000 Angstroms. The substrate may be any material capable of sufficient flexibility for compatibility with roll-based processing equipment, including polymeric films, metallic foils, and thin glass, with polymeric films representing a particularly broad field of application. Methods may include the continuous roll-to-roll formation of a temporary polymeric structure with selected areas open to the underlying substrate, the continuous addition or subtraction of constituent materials, and the continuous removal, where necessary, of the polymeric structure and any excess material.05-21-2009
20110183271METHOD OF MANUFACTURING MASK FOR DEPOSITING THIN FILM - A method of manufacturing a mask for depositing a thin film is disclosed. In one embodiment, the method includes i) providing a raw material substrate for a deposition mask; ii) removing a portion of the raw material substrate to form a pattern, wherein a plurality of openings are defined in the pattern; and iii) irradiating at least a laser beam onto the openings of the pattern at an inclination angle with respect to the raw material substrate such that inclined portions are formed at the side surfaces of each of the openings of the pattern.07-28-2011
20110183270METHOD FOR FORMING THREE-DIMENSIONAL PATTERN - A method for forming a three-dimensional pattern includes following steps. A shaped workpiece having an inner surface and an outer surface is provided, and a first photoresist layer and a second photoresist layer are respectively formed on the outer surface and the inner surface. The shaped workpiece is placed on a transparent fixture. The first photoresist layer and the second photoresist layer are exposed and developed, such that the first photoresist layer forms a patterned photoresist layer, and the second photoresist layer forms an etching protection layer. The shaped workpiece is etched to form the three-dimensional pattern on the outer surface of the shaped workpiece. The patterned photoresist layer and the etching protection layer are removed.07-28-2011
20100047722THREE-DIMENSIONAL NANO MATERIAL STRUCTURES - Techniques for manufacturing a 3-D structure of nano materials are provided. In one embodiment, a method of manufacturing a 3-D structure of nano materials resembling a target structure comprises providing a substrate, and for each segment, forming a mask layer, and patterning the mask layer to form one or more grooves, and filling the grooves with the nano materials. The grooves correspond to one of the horizontal segments of the 3-D structure to be assembled. The method also comprises removing the mask layers.02-25-2010
20120178027MULTIPLE EXPOSURE PHOTOLITHOGRAPHY METHODS - A method. The method forms a film of photoresist composition on a substrate and exposes a first and second region of the film to radiation through a first and second mask having a first and second image pattern, respectively. The photoresist composition includes a polymer including labile group(s), base soluble group(s), a photosensitive acid generator, and a photosensitive base generator. The photosensitive acid generator generates first and second amounts of acid upon exposure to first and second doses of radiation, respectively. The second amount of acid exceeds the first amount of acid. The second dose of radiation exceeds the first dose of radiation. The photosensitive base generator generates a first and second amount of base upon exposure to the first and second dose of radiation, respectively. The first amount of base exceeds the first amount of acid. The second amount of acid exceeds the second amount of base.07-12-2012
20090017401METHOD OF FORMING MICROPATTERN - A resist film provided on one major surface of a process target substrate is patterned to form a resist pattern. A solubilization process is carried out on the resist film remaining in a space portion of the resist pattern to make the resist film easily soluble in a liquid for removing the remaining resist film. Then, the liquid is supplied to the remaining resist film.01-15-2009
20110123935METHOD FOR PRODUCING HOLLOW STRUCTURE - Provided is a fabrication method with which a laminate having a hollow structure can be produced more easily, while enabling to produce a multilayer structure as well. That is, a method for producing a hollow structure, a fabrication method by stacking-up a structural material among fabrication methods of a hollow structure on a substrate, the method including a step of forming a structural material layer on a substrate, a step of forming a pattern on the structural material layer, a step of forming a sacrificial material layer by burying between the patterns with a water-soluble or an alkaline-soluble polymer as the sacrificial material to be buried between the patterns, a step of further laminating a structural material layer and forming a pattern on the structural material layer laminated, and a step of finally removing the sacrificial material after all of lamination is completed.05-26-2011
20080299501Low CTE photomachinable glass - The present invention describes a composition, method and article for a photomachinable glass having a coefficient of thermal expansion from less than 6×1012-04-2008
20110003255METHOD FOR PROCESSING WORKPIECE WITH PHOTORESIST LAYER - A method for processing a workpiece (01-06-2011
20120270157RESIST UNDERLAYER FILM-FORMING COMPOSITION AND METHOD FOR FORMING PATTERN - A resist underlayer film-forming composition includes a polymer including a structural unit shown by a formula (1), and having a polystyrene-reduced weight average molecular weight of from 3000 to 10000, and a solvent. Each of R10-25-2012
20110236836METHOD FOR FORMING FINE PATTERN - A method includes forming a hard mask layer over an etch target layer that extends across first and second regions, forming a sacrificial layer pattern over the hard mask layer of the first region, removing the sacrificial layer pattern after forming a spacer pattern on side walls thereof, selectively etching the hard mask layer of the first region by using the spacer pattern as an etch barrier while protecting the hard mask layer of the second region from being etched, removing the spacer pattern, forming a cut mask pattern over the hard mask layer of the first and second regions, etching the hard mask layer of the first and second regions by using the cut mask pattern as an etch barrier, removing the cut mask pattern, and forming patterns in the first and second regions respectively by using the hard mask layer of the first and second regions as an etch barrier and etching the etch target layer.09-29-2011
20100233632SILICON-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, AND PATTERN FORMING METHOD - A silicon-containing film-forming composition includes a polysiloxane and organic solvent. The polysiloxane includes a first structural unit, a second structural unit, and a third structural unit. The first structural unit is derived from a tetraalkoxysilane. The second structural unit is derived from a compound shown by a formula (1), wherein R09-16-2010
20110159445Method for Making a Texture on a Transparent Conductive Film of a Solar Cell - Disclosed is a method for making a texture on a face of a transparent conductive film coated on a glass substrate. The method includes the steps of forming a texture on the face of the glass substrate and coating the transparent conductive film on the texture formed on the face of the glass substrate.06-30-2011
20080248432NEAR-FIELD EXPOSURE METHOD - A near-field exposure method wherein an exposure mask having a light blocking film with an opening smaller than a wavelength of light from an exposure light source is used and wherein an object to be exposed is exposed by near-field light produced at the opening of the exposure mask based on the exposure light from the exposure light source, includes a step of determining a width of the opening so as to satisfy equations (1), (2) and (3) below, where the width of the opening of the exposure mask is denoted by s (nm), a processing pitch of the object to be exposed is denoted by p (nm) and coefficients are denoted by a and b,10-09-2008
20080227037Resist lower layer film composition and patterning process using the same - A resist lower layer film composition, wherein an etching speed is fast, thus an etching time period can be shortened to minimize a film thickness loss of a resist pattern and a deformation of the pattern during etching, therefore, a pattern can be transferred with high accuracy and an excellent pattern can be formed on a substrate is provided.09-18-2008
20130143165PHOTOLITHOGRAPHED MICRO-MIRROR WELL FOR 3D TOMOGRAM IMAGING OF INDIVIDUAL CELLS - A micro-mirror well. In one embodiment the micro-mirror well includes a plurality of planar mirrors arranged around an axis of symmetry and inclined to form a pyramid well, where each of the plurality of planar mirrors is capable of reflecting light emitting from an object of interest placed inside the pyramid well.06-06-2013
20090263751Methods for double patterning photoresist - Embodiments of methods for double patterning photoresist are generally described herein. Other embodiments may be described and claimed.10-22-2009
20100055621Patterning process - There is disclosed a patterning process including steps of at least: forming a photoresist film on a substrate; exposing the photoresist film to a high energy beam; developing by using a developer; forming a photoresist pattern; and then forming a spacer on the photoresist pattern sidewall, thereby forming a pattern on the substrate, a patterning process, wherein at least the photoresist pattern having the hardness of 0.4 GPa or more or the Young's modulus of 9.2 GPa or more as a film strength is formed, and a pattern is formed on the substrate by forming a silicon oxide film as the spacer on the photoresist pattern sidewall. There can be provided a patterning process without causing a deformation of a resist pattern and an increase in LWR at the time of forming a silicon oxide film on a photoresist pattern.03-04-2010
20110275019HARDMASK COMPOSITION HAVING ANTIREFLECTIVE PROPERTIES AND METHOD OF PATTERNING MATERIAL ON SUBSTRATE USING THE SAME - A hardmask composition includes an organic solvent and one or more aromatic ring-containing polymers represented by Formulae 1, 2 and 3:11-10-2011
20130183625PATTERNED GRAPHENE FABRICATION METHOD - A method for fabricating patterned graphene structures, which adopts a photolithographic etching process to fabricate patterned graphene structures, comprises steps: providing a substrate; forming a catalytic layer on the substrate; forming a carbon layer on the catalytic layer; heating the carbon layer to a synthesis temperature to form a graphene layer. A photolithographic etching process is performed on the catalytic layer before formation of the carbon layer. Alternatively, a photolithographic etching process is performed on the carbon layer before heating. Alternatively, a photolithographic etching process is performed on the graphene layer after heating. Compared with the laser etching process, the photolithographic etching process is suitable to fabricate large-area patterned graphene structures and has advantages of high productivity and low cost.07-18-2013
20110311921Composition For Stripping And Cleaning And Use Thereof - A composition comprising one or more water soluble organic solvents comprising a glycol ether; water; a fluoride containing compound provided that if the fluoride containing compound is ammonium fluoride than no additional fluoride containing compound is added to the composition; optionally a quaternary ammonium compound; and optionally a corrosion inhibitor is disclosed herein that is capable of removing residues from an article such as photoresist and/or etching residue. Also disclosed herein is a method for removing residues from an article using the composition disclosed herein.12-22-2011
20110311920NAPHTHALENE DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, RESIST BOTTOM LAYER FORMING METHOD, AND PATTERNING PROCESS - A naphthalene derivative having formula (1) is provided wherein cyclic structures Ar1 and Ar2 denote a benzene or naphthalene ring, X is a single bond or C12-22-2011
20120028195Composition for Coating over a Photoresist Pattern - The present invention relates to an aqueous composition for coating over a photoresist pattern comprising a first water soluble compound comprising at least a silicon moiety and at least one amino group, and a second compound comprising at least 1 carboxylic acid group. The invention further relates to processes for using the novel invention.02-02-2012

Patent applications in class Including etching substrate