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Forming nonplanar surface

Subclass of:

430 - Radiation imagery chemistry: process, composition, or product thereof

430269000 - IMAGING AFFECTING PHYSICAL PROPERTY OF RADIATION SENSITIVE MATERIAL, OR PRODUCING NONPLANAR OR PRINTING SURFACE - PROCESS, COMPOSITION, OR PRODUCT

Patent class list (only not empty are listed)

Deeper subclasses:

Class / Patent application numberDescriptionNumber of patent applications / Date published
430325000 Post image treatment to produce elevated pattern 356
430323000 Including etching substrate 110
430324000 Including material deposition 65
Entries
DocumentTitleDate
20130045447LITHOGRAPHIC APPARATUS, SUPPORT TABLE FOR A LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD - A support table configured to support a substrate, the support table having a support section to support a substrate and a conditioning system to supply heat energy to and/or remove heat energy from the support section, wherein the conditioning system comprises a plurality of conditioning units that are independently controllable.02-21-2013
20120244477PELLICLE FOR LITHOGRAPHY - The invention provides a pellicle for lithography used in the photolithography, affording a wider range of transmissivity to inclinedly incident beams that can be used in a photolithographic procedure. The pellicle used in the photolithography using ArF excimer laser beams is characterized in that the pellicle has a pellicle membrane having a thickness which is 400 nm or smaller and at which the membrane exhibits a local maximum transmissivity to a vertically incident ArF excimer laser beam. Herein, the angle of inclined incidence is preferably 13.4 degrees, and the pellicle membrane has preferably a thickness of 600 nm or smaller, in particular in a range selected from 560 to 563 nm and 489 to 494 nm and 418 to 425 nm and 346 to 355 nm and 275 to 286 nm and 204 to 217 nm.09-27-2012
20080286697Method and apparatus for processing a wafer - A method of a single wafer wet/dry cleaning apparatus comprising: 11-20-2008
20120264067MANUFACTURING METHOD FOR EXPOSURE MASK, GENERATING METHOD FOR MASK SUBSTRATE INFORMATION, MASK SUBSTRATE, EXPOSURE MASK, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE AND SERVER - There is disclosed a manufacturing method for exposure mask, which comprises acquiring a first information showing surface shape of surface of each of a plurality of mask substrates, and a second information showing the flatness of the surface of each of mask substrates before and after chucked on a mask stage of an exposure apparatus, forming a corresponding relation of each mask substrate, the first information and the second information, selecting the second information showing a desired flatness among the second information of the corresponding relation, and preparing another mask substrate having the same surface shape as the surface shape indicated by the first information in the corresponding relation with the selected second information, and forming a desired pattern on the above-mentioned another mask substrate.10-18-2012
20080268379Anti-Reflective Coating Forming Composition For Lithography Containing Polymer Having Ethylenedicarbonyl Structure - There is provided an anti-reflective coating forming composition for lithography comprising a polymer having an ethylenedicarbonyl structure and a solvent; an anti-reflective coating formed from the composition; and a method for forming photoresist pattern by use of the composition. The anti-reflective coating obtained from the composition can be used in lithography process for manufacturing a semiconductor device, has a high preventive effect for reflected light, causes no intermixing with photoresists, and has a higher etching rate than photoresists.10-30-2008
20090123877METHOD FOR FORMING AN OPENING OF NANO-METER SCALE - A method for forming an opening of nano-meter scale includes providing a substrate with a material layer, and later forming a first part of the opening and then forming a second part of the opening in the material layer. At least one of the first part and the second part of the opening is formed by imprint.05-14-2009
20090305171APPARATUS FOR SCANNING SITES ON A WAFER ALONG A SHORT DIMENSION OF THE SITES - An exposure apparatus (12-10-2009
20090297989Method and device for patterning a disk - Embodiments of the invention relate to methods and apparatus useful in the nanopatterning of rotationally symmetric disk materials, like magnetic and optical disks, where a rotatable mask is used to image a radiation-sensitive material. Typically the rotatable mask comprises a cone. The nanopatterning technique makes use of Near-Field photolithography, where the mask used to pattern the disk is in contact or close proximity with the disk. The Near-Field photolithography may make use of an elastomeric phase-shifting mask, or may employ surface plasmon technology, where a rotating cone surface comprises metal nano holes or nanoparticles.12-03-2009
20090269705Lighography method - Embodiments of the invention relate to lithography method useful for patterning at sub-micron resolution. This method comprised of deposition and patterning self-assembled monolayer resists using rolling applicator and rolling mask exposure apparatus. Typically the application of these self-assembled monolayers involves contacting substrate materials with a rotatable applicator in the shape of cylinder or cone wetted with precursor materials. The nanopatterning technique makes use of Near-Field photolithography, where the mask used to pattern the substrate is in contact with self-assembled monolayer. The Near-Field photolithography may make use of an elastomeric phase-shifting mask, or may employ surface plasmon technology, where a rotating mask surface comprises metal nano holes or nanoparticles.10-29-2009
20090075216STORAGE MEDIUM STORING EXPOSURE CONDITION DETERMINATION PROGRAM, EXPOSURE CONDITION DETERMINATION METHOD, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD - A computer-readable storage medium storing a program for causing a computer to execute determination of an exposure condition for use in illuminating an original plate with an illumination optical system and projecting an image of a pattern of the original plate onto a substrate through a projection optical system. The program causes the computer to perform operations including setting a light intensity distribution on a pupil plane in the illumination optical system based on a constraint condition concerning an optical element constituting the illumination optical system, calculating the image of the pattern of the original plate to be projected onto the substrate using the light intensity distribution, and determining the exposure condition for exposing the substrate with the image of the pattern of the original plate based on a calculation result of the image of the pattern of the original plate and the constraint condition.03-19-2009
20130065185Scanning Lithography using point source imaging arrays - A new and useful concept for imaging a substrate is provided, that includes a source of illumination comprising a plurality of point light sources, and imaging the substrate by projecting each point light source through a near field projection schema (e.g an array of near field lens elements) to create a predetermined illumination pattern at the substrate.03-14-2013
20090047608APPARATUS AND METHOD FOR TRANSFERRING FEATURES TO AN EDGE OF A WAFER - An edge shot (“ES”) exposure apparatus (02-19-2009
20090047607EXPOSURE METHOD, EXPOSURE APPARATUS AND DEVICE FABRICATING METHODS - A liquid immersion region (LR) is formed on a measuring member (02-19-2009
20090047606Lithography meandering order - An imprint lithography method is disclosed, which includes imprinting a plurality of patterns in an imprintable medium provided on a substrate, wherein the order in which the patterns are imprinted in the imprintable medium is such that, for the majority of the patterns, two consecutively imprinted patterns are not imprinted adjacent to one another.02-19-2009
20090029296IMAGE RECORDING METHOD AND DEVICE - A light quantity of a laser beam (L) outputted from exposure heads (01-29-2009
20090017400PATTERN FORMING METHOD - A pattern forming method, includes: exposing a resist film with actinic rays or radiation a plurality of times; and heating the resist film at a first temperature in at least one interval between the exposures.01-15-2009
20090011371REFLECTIVE FILM INTERFACE TO RESTORE TRANSVERSE MAGNETIC WAVE CONTRAST IN LITHOGRAPHIC PROCESSING - A method and system for exposing a resist layer with regions of photosensitivity to an image in a lithographic process using a high numerical aperture imaging tool. There is employed a substrate having thereover a layer reflective to the imaging tool radiation and a resist layer having a region of photosensitivity over the reflective layer, with the resist layer having a thickness. The imaging tool is adapted to project radiation containing an aerial image onto the resist layer, with a portion of the radiation containing the aerial image passing through the resist layer and reflecting back to the resist layer. The reflected radiation forms an interference pattern in the resist layer of the projected aerial image through the resist layer thickness. The thickness and location of the resist layer region of photosensitivity with respect to the reflective layer are selected to include from within the interference pattern higher contrast portions of the interference pattern in the direction of the resist thickness, and to exclude lower contrast portions of the interference pattern in the resist thickness direction from said resist layer region of photosensitivity, to improve contrast of the aerial image in said resist layer region of photosensitivity.01-08-2009
20090011370PATTERN FORMING METHOD USING TWO LAYERS OF RESIST PATTERNS STACKED ONE ON TOP OF THE OTHER - A pattern forming method using two layers of resist pattern stacked one on the other has been disclosed. First, a first resist pattern is formed on a to-be-processed film. The first resist pattern is slimmed. On the slimmed first resist pattern and to-be-processed film, a second resist pattern is formed. With the first and second resist patterns as a mask, the film is processed.01-08-2009
20090011369Lithographic method and device manufactured thereby - A substrate processing method of a substrate provided with an anti-reflective coating which extends to or beyond a peripheral edge of the substrate is disclosed. The method includes removing a portion of the anti-reflective coating adjacent to and around a periphery of the substrate using a back-side removal process, depositing a layer of radiation sensitive material onto the anti-reflective coating, depositing a top-coat layer onto the layer of radiation sensitive material, and simultaneously removing a portion of the layer of radiation sensitive material and a portion of the top-coat layer from around an area adjacent to the periphery of the substrate using a top-side removal process.01-08-2009
20130164687HYBRID COOLING AND THERMAL SHIELD FOR ELECTROMAGNETIC ACTUATORS - A stage assembly includes a stage, a base assembly, a stage mover, and a temperature adjuster. The temperature adjuster includes a first plate, a first thermal insulator, a circulation housing, a first fluid system, and a second fluid system. The first plate is positioned adjacent to a conductor array of the stage mover. The first thermal insulator is positioned adjacent to the first plate. The circulation housing defines at least a portion of a housing passageway that is positioned adjacent to the first thermal insulator. The first fluid system directs a first circulation fluid through the housing passageway, and the second fluid system directs a second circulation fluid through the first plate channel. With this design, the second circulation fluid removes the majority of the heat from the conductor array, and the first circulation fluid shields an outer surface of the circulation housing from thermal disturbance.06-27-2013
20130164688Support, Lithographic Apparatus and Device Manufacturing Method - A support for an object, e.g., a semiconductor substrate, includes a main body having a surface configured and arranged to have a plurality of projections. Each of the projections has an associated electrostatic actuator for displacing a free end of the associated projection relative to the main body at least in a direction in a plane parallel to a main surface of the object.06-27-2013
20090087795METHOD AND APPARATUS FOR CLEANING A SEMICONDUCTOR SUBSTRATE IN AN IMMERSION LITHOGRAPHY SYSTEM - A method and apparatus for reduction and prevention of residue formation and removal of residues formed in an immersion lithography tool. The apparatus including incorporation of a cleaning mechanism within the immersion head of an immersion lithographic system or including a cleaning mechanism in a cleaning station of an immersion lithographic system.04-02-2009
20130022929METHOD AND SYSTEM FOR MANUFACTURING A SURFACE USING SHAPED CHARGED PARTICLE BEAM LITHOGRAPHY - In the field of semiconductor production using shaped beam charged particle beam lithography, a pattern is formed on a surface by dragging a charged particle beam across the surface in a single extended shot to form a track. In some embodiments, the track may form a straight path, a curved path, or a perimeter of a curvilinear shape. In other embodiments, the width of the track may be altered by varying the velocity of the dragged beam. The techniques may be used for manufacturing an integrated circuit by dragging a charged particle beam across a resist-coated wafer to transfer a pattern to the wafer, or by dragging a charged particle beam across a reticle, where the reticle is used to manufacture a photomask which is then used to transfer a pattern to a wafer using an optical lithographic process.01-24-2013
20090142710METHOD FOR PATTERNING A PHOTORESIST LAYER - The disclosed is a method for patterning a photoresist layer. An object is provided, a photoresist layer is formed on the object, and an ink pattern is printed on the photoresist layer. Shielded by the ink pattern, the photoresist is exposed and developed to be patterned. In addition, a layered material is optionally formed between the object and the photoresist layer.06-04-2009
20110300490HIGH-RESOLUTION MICROSCOPY AND PHOTOLITHOGRAPHY DEVICES USING FOCUSING MICROMIRRORS - The invention relates to large-field high-resolution microscopy and photolithography setups operating with polychromatic light. It includes the use of a plurality of focusing micromirrors.12-08-2011
20110294074EXPOSURE APPARATUS AND EXPOSING METHOD USING THE APPARATUS - An exposure apparatus and an exposing method using the apparatus. The exposure apparatus includes a photomask having a plurality of optical sources attached to a substrate.12-01-2011
20090202951CLEANING APPARATUS AND CLEANING METHOD, COATER/DEVELOPER AND COATING AND DEVELOPING METHOD, AND COMPUTER READABLE STORING MEDIUM - A cleaning apparatus includes a first substrate-holding portion configured to hold a first area of a back surface of the substrate so that the top surface is kept face up; a second substrate-holding portion configured to hold a second area of the back surface of the substrate, the second area being not overlapped with the first area, and rotate the substrate; a top-surface cleaning nozzle configured to supply a top surface cleaning fluid to a top surface of the substrate; a bevel cleaning nozzle configured to supply a bevel cleaning fluid to a bevel portion of the substrate; a cleaning fluid supplying portion configured to supply a back surface cleaning fluid to the back surface of the substrate held by the first or the second substrate-holding portion; and a cleaning member configured to clean the back surface of the substrate held by the first or the second-substrate holding portion.08-13-2009
20100035190METHOD OF FORMING AN ALIGNMENT LAYER, AND APPARATUS FOR FORMING THE ALIGNMENT LAYER - A method of forming an alignment layer includes; providing a substrate having a base substrate and a photosensitive polymer layer disposed on the base substrate, the base substrate including a plurality of unit pixel areas, each of which is divided into a plurality of sub-pixel areas, photoaligning the photosensitive polymer layer by irradiating first light to a first exposure area of a first unit pixel area, the first light being inclined at a first angle with respect to the substrate in a first direction, and substantially simultaneously photoaligning the photosensitive polymer layer by irradiating second light to a second exposure area of a second unit pixel area at substantially the same time as the first light is irradiated to the first exposure area, the second light being inclined at a second angle with respect to the substrate in a second direction.02-11-2010
20090191490METHOD AND APPARATUS FOR STRUCTURING A RADIATION-SENSITIVE MATERIAL - A method and to an apparatus for structuring a radiation-sensitive material are disclosed. The method can include using a dynamic mask to generate a first radiation pattern in a layer of the radiation-sensitive material, where the first radiation pattern has a thickness that is at most 50% of the thickness of the layer of the radiation-sensitive material. The method can also include using the dynamic mask to generate a second radiation pattern in the layer of the radiation-sensitive material. The dynamic mask can be configured to change its structure dynamically, and the first radiation pattern can be different from the second radiation pattern.07-30-2009
20080241761STANDARD IMAGE PATTERN, DEVELOPER EVALUATION METHOD FOR PLANOGRAPHIC PRINTING PLATE USING THE STANDARD IMAGE PATTERN, AND QUALITY CONTROL METHOD FOR PLANOGRAPHIC PRINTING PLATE USING THE STANDARD IMAGE PATTERN - The invention provides a standard image pattern for controlling a process of making printing plates, having at least: a plurality of AM halftone images, each of which is formed of dots according to Amplitude Modulation Screening, and each of which has an area coverage that is different from that of the others; and a plurality of FM halftone images, which are formed of dots according to Frequency Modulation Screening, which are respectively adjacent to the plurality of the AM halftone images, and which have a predetermined area coverage. The invention further provides a method for evaluating a developer for a planographic printing plate using the standard developer and a method for controlling quality of a planographic printing plate using the standard developer.10-02-2008
20110195361SOLUTION TO OPTICAL CONSTRAINT ON MICROTRUSS PROCESSING - A system for fabricating a radiation-cured structure is provided. The system includes a radiation-sensitive material having a first refractive index; a mask formed from a mask material having a second refractive index; and a radiation source. The mask is disposed between the radiation source and the radiation-sensitive material, and has a plurality of substantially radiation transparent apertures. The radiation source is configured to generate radiation beams for at least one of initiating, polymerizing, and crosslinking the radiation-sensitive material. The system includes at least one of a) an at least one normalizing surface disposed between the radiation source and the mask, b) a refractive fluid having a third refractive index disposed between the radiation source and the mask, and c) the refractive fluid having the third refractive index disposed between the mask and the radiation-sensitive material. A method for fabricating the radiation-cured structure is also provided.08-11-2011
20100015557SEALED CELL STRUCTURE - A method for forming a sealed cell structure is disclosed. The sealed cell structure comprises first (01-21-2010
20090087797SYSTEM AND METHOD FOR CONTRAST ENHANCED ZONE PLATE ARRAY LITHOGRAPHY - A lithography system is disclosed that includes an array of focusing elements for directing focused illumination toward a recording medium, and a reversible contrast-enhancement material disposed between the recording medium and the array of focusing elements.04-02-2009
20090087796Cyclopentene As A Precursor For Carbon-Based Films - The present invention provides a method for forming an amorphous carbon layer on a substrate. The method comprises the steps of: positioning the substrate in a processing chamber; introducing a process gas into the processing chamber, wherein the process gas comprises a composition comprising a C04-02-2009
20090087798SYSTEM AND METHOD FOR ABSORBANCE MODULATION LITHOGRAPHY - A lithography system is disclosed that provides an array of areas of imaging electromagnetic energy that are directed toward a recording medium. The reversible contrast-enhancement material is disposed between the recording medium and the array of areas of imaging electromagnetic energy.04-02-2009
20100099049PATTERN FORMING METHOD AND APPARATUS, EXPOSURE METHOD AND APPARATUS, AND DEVICE MANUFACTURING METHOD AND DEVICE - During a period after starting exposure to a plurality of shot areas subject to exposure on a wafer until completing the exposure, a light via a slit pair arranged on a stage that holds the wafer, of illumination light via a pattern generating device, is received, and information on a positional relation between an illumination light and the stage (and hence a positional relation between the illumination light and the wafer) is detected. With this operation, even if the information on the positional relation between the illumination light and the wafer varies due to some reason, information on the variation can be detected while performing the exposure to the plurality of shot areas. Accordingly, high-precision exposure can be achieved in an exposure operation, by considering this detection results.04-22-2010
20100028814MANUFACTURING CROSS-STRUCTURES OF NANOSTRUCTURES - Techniques for manufacturing cross-structures of nanostructures, such as nanowires and carbon nanotubes are provided. In one embodiment, a method for manufacturing cross-structures of nanostructures include providing a substrate, patterning a first mask layer on the substrate, adsorbing first nanostructures onto surface regions of the substrate where the first mask layer does not exist, removing the first mask layer from the substrate, patterning a second mask layer on the substrate to which the first nanostructures are adsorbed, and adsorbing second nanostructures onto the surface regions of the substrate where the second mask layer does not exist, under conditions effective to manufacture cross-structures of nanostructures on the substrate.02-04-2010
20120107747METHOD OF LITHOGRAPHY - A lithography method of manufacturing integrated circuits is disclosed. A photoalignment layer is formed on a substrate. A treatment is performed to reorganize and align the photoalignment molecules. A photoresist layer may be formed on the photoalignment layer in a bi-layer separate coating or with the photoalignment layer in a bound-bind structure.05-03-2012
20090263750FOREIGN PARTICLE INSPECTION APPARATUS, EXPOSURE APPARATUS, AND METHOD OF MANUFACTURING DEVICE - A foreign particle inspection apparatus includes a light projecting unit, a photo-receiving unit which receives the scattered light, and a. The photo-receiving unit is arranged such that its optical axis is tilted by a first angle with respect to a plane including the optical axis and the normal axis to the surface. When the angle of the polarization axis of the projected light with respect to the plane is defined as a second angle, the controller controls at least one of the polarization axis and the arrangement of the photo-receiving unit so that the differences between the first angle and the second angle become a first state and a second state, thereby determining a foreign particle based on the outputs from the photo-receiving unit in the first state and the second state.10-22-2009
20100099048Stop Flow Interference Lithography System - Stop flow interference lithography system for high throughput synthesis of 3-dimensionally patterned polymer particles. The system includes a microfluidic channel containing a stationary oligomer film and a phase mask located adjacent to the microfluidic channel. A source of collimated light is provided for passing the collimated light through the phase mask and into the microfluidic channel for interaction with the oligomer. The passage of the collimated light through the phase mask generates a 3-dimensional distribution of light intensity to induce crosslinking of the oligomer in high intensity regions thereby forming 3-dimensional structures.04-22-2010
20090274981METHOD OF DETECTING REPEATING DEFECTS IN LITHOGRAPHY MASKS ON THE BASIS OF TEST SUBSTRATES EXPOSED UNDER VARYING CONDITIONS - Mask defects, such as crystal growth defects and the like, may be efficiently detected and estimated at an early stage of their development by generating test images of the mask under consideration and inspecting the images on the basis of wafer inspection techniques in order to identify repeatedly occurring defects. In some illustrative embodiments, the exposure process for generating the mask images may be performed on the basis of different exposure parameters, such as exposure doses, in order to enhance the probability of detecting defects and also estimating the effect thereof depending on the varying exposure parameters. Consequently, increased reliability may be achieved compared to conventional direct mask inspection techniques.11-05-2009
20090280436Immersion system, exposure apparatus, exposing method, and device fabricating method - An immersion system is used in an immersion exposure, wherein a substrate is exposed with an exposure light through an optical member and a liquid, and that fills an optical path of the exposure light between the optical member and the substrate with the liquid. The immersion system comprises: a first member, which is disposed around the optical path of the exposure light and has a first surface that faces in a first direction; a second member that has a liquid recovery port, which is disposed on the outer side of the first surface with respect to the optical path of the exposure light; a first drive apparatus that is capable of moving the first member parallel to the first direction; and a second drive apparatus that is capable of moving the second member parallel to the first direction independently of the first member; wherein, a space between the first surface and a front surface of an object can hold the liquid; and a liquid between the liquid recovery port and the front surface of the object is recovered via the liquid recovery port.11-12-2009
20080206684METHOD FOR FORMING RING PATTERN - A method for forming a ring pattern is disclosed. The ring pattern has a first wall and a second wall. The method includes the following steps: (a) providing a substrate; (b) forming a dielectric layer on the substrate; (c) forming a first patterned photoresist layer on the dielectric layer, the first patterned photoresist layer defining the first wall; (d) etching the dielectric layer to a predetermined depth by using the first patterned photoresist as a mask, and then removing the first patterned photoresist layer; (e) forming a second patterned photoresist layer on the dielectric layer, the second patterned photoresist layer defining the second wall; (f) etching the dielectric layer by using the second patterned photoresist layer as a mask so as to form the ring pattern having the first wall and the second wall.08-28-2008
20090104568Exposure method, exposure apparatus, and method for producing device - An exposure method exposes a substrate by projecting an image of a pattern onto the substrate through a liquid by using a projection optical system while moving the substrate in a predetermined direction. A temperature distribution of the liquid in a direction intersecting the predetermined direction is measured. A projection state of the image of the pattern is adjusted on the basis of information about the measured temperature distribution. The substrate is exposed to the image of the pattern in the projection state.04-23-2009
20090280437PROJECTION EXPOSURE METHODS AND SYSTEMS - Projection exposure methods, systems, sub-systems and components are disclosed. Methods can include performing a first exposure to image a first sub-pattern of the pattern, where the first sub-pattern includes a plurality of first features extending in a first direction and spaced apart essentially periodically at a predominant periodicity length P in a second direction perpendicular to the first direction. The first exposure can be performed using a multipolar illumination mode that includes at least one substantially dipolar intensity distribution having two illumination poles positioned on a pole orientation axis substantially parallel to the second direction and spaced apart from each other. The poles of the dipolar intensity distribution can each have an azimuthal width defined by a pole angle θ, and a pole area A11-12-2009
20080305440APPARATUS FOR FABRICATING NANOSCALE PATTERNS IN LIGHT CURABLE COMPOSITIONS USING AN ELECTRIC FIELD - The present invention is directed to an apparatus for patterning a liquid on a substrate, with the apparatus including, a template having a pair of spaced-apart recessions with a protrusion disposed therebetween, with the protrusion being spaced-apart from the substrate a first distance and each of the pair of spaced-apart recessions being spaced-apart from the substrate a second distance, with the second distance being greater than the first distance; and a source of voltage in electrical communication with the template to produce an electric field between the template and the substrate, with a strength of the electrical field being inversely proportional to the first and second distances.12-11-2008
20120295205Radiation Source, Lithographic Apparatus and Device Manufacturing Method - A radiation source generates extreme ultraviolet radiation for a lithographic apparatus as a chamber that is provided with a low pressure hydrogen environment. A trace amount of a protective compound, e.g., H11-22-2012
20090311632DEVELOPING METHOD AND DEVELOPING APPARATUS - A developing method comprising a developing step in which, while a wafer horizontally held by a spin chuck is being rotated, the wafer is developed by supplying a developer onto a surface of the wafer, wherein provided before the developing step is a pre-wetting step in which, simultaneously with the developer being supplied from a first nozzle that is located on a position near a central part of the surface of the rotating wafer, a deionized water as a second liquid is supplied from a second nozzle that is located on a position nearer to an outer peripheral part of the wafer than the first nozzle, to thereby spread out the developer in the rotating direction of the wafer by a wall that is formed by the deionized water flowing the outer peripheral side of the wafer with the rotation of the wafer. Thus, a wetting property of a surface of a resist film formed on the wafer that is made hydrophobic can be improved, whereby a developer film can be efficiently formed and thus the developing process can be stabilized.12-17-2009
20090311631NEAR-FIELD EXPOSURE APPARATUS AND NEAR-FIELD EXPOSURE METHOD - A near-field exposure apparatus includes a near-field exposure mask, a mechanism to place a substrate to be exposed, opposed to the near-field exposure mask, a mechanism to perform relative alignment of the near-field exposure mask and the substrate to be exposed, a mechanism to closely contact the near-field exposure mask and the substrate to be exposed, with each other, a mechanism to project exposure light to the near-field exposure mask, and a soft X-ray irradiating device to remove static electricity charged in at least one of the near-field exposure mask and the substrate to be exposed. The soft X-ray irradiating device is disposed at a side of the near-field exposure mask remote from the substrate to be exposed.12-17-2009
20080241760PEB EMBEDDED EXPOSURE APPARATUS - The present disclosure provides a lithography apparatus. The apparatus includes an exposure module designed for exposure processing; a baking module embedded in the exposure module and designed for post exposure baking (PEB); and a control module designed to control the exposure module and the baking module.10-02-2008
20080206683MASK AND BLANK STORAGE INNER GAS - The present disclosure provides a lithography apparatus. The lithography apparatus includes a radiation source providing a radiation energy with a wavelength selected from the group consisting of 193 nm, 248 nm, and 365 nm; a lens system configured approximate to the radiation source; a mask chamber proximate to the lens system, configured to hold a mask and operable to provide a single atom gas to the mask chamber; and a substrate stage configured to hold a substrate and receive the radiation energy through the lens system and the mask during an exposing process.08-28-2008
20080268380OPTICAL APPARATUS, MULTILAYER-FILM REFLECTIVE MIRROR, EXPOSURE APPARATUS, AND DEVICE - An optical apparatus comprises a plurality of multilayer-film reflective mirrors that are capable of reflecting an electromagnetic wave in an extreme ultraviolet region. The multilayer-film reflective mirrors are arranged along an optical axis of the electromagnetic wave, and at least two of the multilayer-film reflective mirrors have reflecting wavelength characteristics being different from each other, in a wavelength region other than the extreme ultraviolet region.10-30-2008
20090170039EXPOSURE METHOD - The invention provides an exposure method for manufacturing a device. The method includes providing a wafer having several exposure regions with a photoresist layer covering thereon. A feedback parameter map with several exposure-region feedback parameter sets respectively corresponds to the exposure regions of the wafer. At least one of the exposure-region feedback parameter sets is different from the rest of the exposure-region feedback parameter sets. According to the feedback parameter map, an exposure process is sequentially performed on each of the exposure regions of the wafer through an exposure tool to pattern the photoresist layer on the wafer. While the exposure tool performs the exposure process on each of the exposure regions, an exposure process parameter set of the exposure tool is adjusted based on the exposure-region feedback parameter sets corresponding to the exposure region in the feedback parameter map.07-02-2009
20090136876SYSTEM AND METHOD FOR PHOTOLITHOGRAPHY IN SEMICONDUCTOR MANUFACTURING - A method for producing a pattern on a substrate includes providing at least one exposure of the pattern onto a layer of the substrate by a higher-precision lithography mechanism and providing at least one exposure of the pattern onto a layer of the substrate by a lower-precision lithography mechanism. The exposures can be done in either order, and additional exposures can be included. The higher-precision lithography mechanism can be immersion lithography and the lower-precision lithography mechanism can be dry lithography.05-28-2009
20090186306Polymeric microfluidic devices from liquid thermoset precursors - A method and apparatus for the fabrication of polymeric microfluidic devices through sequential photolithographic polymerization of micropatterned polymeric layers.07-23-2009
20090081594APPLICATIONS OF SEMICONDUCTOR NANO-SIZED PARTICLES FOR PHOTOLITHOGRAPHY - Semiconductor nano-sized particles possess unique optical properties, which make them ideal candidates for various applications in the UV photolithography. In this patent several such applications, including using semiconductor nano-sized particles or semiconductor nano-sized particle containing materials as highly refractive medium in immersion lithography, as anti-reflection coating in optics, as pellicle in lithography and as sensitizer in UV photoresists are described.03-26-2009
20110229827Method and Lithography Device with a Mask Reflecting Light - A method and lithography device addressing the problem in projection optics of pupil apodization which leads to imaging defects. As here proposed, the illumination system is configured to illuminate the mask inhomogeneously. As a result, inhomogeneities in reflectivity caused by the mask itself are at least partly counteracted. This compensation not only makes the apodization over the pupil become more symmetric but also makes the intensity variation smaller overall.09-22-2011
20080292995Antireflective Coating Composition Comprising Fused Aromatic Rings - The present invention relates to an organic spin coatable antireflective coating composition comprising a polymer comprising at least one unit with 3 or more fused aromatic rings in the backbone of the polymer and at least one unit with an aliphatic moeity in the backbone of the polymer. The invention further relates to a process for imaging the present composition.11-27-2008
20090117494CONTROLLER FOR OPTICAL DEVICE, EXPOSURE METHOD AND APPARATUS, AND METHOD FOR MANUFACTURING DEVICE - An exposure method for exposing a mask pattern, which includes plural types of patterns, with a high throughput and optimal illumination conditions for each type of pattern. The method includes guiding light from a first spatial light modulator illuminated with pulse lights of illumination light to a second spatial light modulator and exposing a wafer with light from the second spatial light modulator, accompanied by: controlling a conversion state of the second spatial light modulator including a plurality of second mirror elements; and controlling a conversion state of the first spatial light modulator including a plurality of first mirror elements to control intensity distribution of the illumination light on a predetermined plane between the first spatial light modulator and the second spatial light modulator.05-07-2009
20090214985METHOD FOR REDUCING SURFACE DEFECTS ON PATTERNED RESIST FEATURES - A method is provided for post-processing lithographically patterned resists to reduce surface defects on a patterned resist feature. The method includes providing a substrate with a patterned resist feature containing surface defects with convex and concave regions, applying an acid solution to the patterned resist feature to form a surface acid layer on the patterned resist feature, heat-treating the patterned resist feature, where the heat-treating causes acid concentration in the convex regions and acid dispersion in the concave regions. The method further includes exposing the heat-treated patterned resist feature to a developing solution to preferentially remove resist material from the convex regions and form a trimmed patterned resist feature with reduced surface defects. According to one embodiment, the method further includes repeating the applying, heat-treating, and exposing at least once to further trim and reduce surface defects on the trimmed patterned resist feature.08-27-2009
20090214986LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD - The joint between the projection system element and its support comprises an inorganic layer or a direct bond and is thus liquid tight, which can prevent deformation by an immersion liquid. The joint can be made either warm or cold. Solders, glue, and glue protection can all be used in the formation of this joint. In an embodiment, the elements and its support are made of quartz.08-27-2009
20090220895Metrology of bilayer photoresist processes - A method for patterning a substrate is provided, which comprises (a) providing a substrate; (b) applying a first layer comprising a first photo resist to the substrate; (c) applying a second layer comprising a second photo resist over the first layer; (d) patterning the second layer; and (e) inspecting the patterned second layer with an inspection tool; wherein at least one of the first and second layers comprises a contrasting agent which increases the contrast between the first and second layers to the inspection tool.09-03-2009
20090253079FORMING REVERSE ILLUMINATION PATTERNS - In photolithographic exposure, the illumination pattern (10-08-2009
20080318168Method and Device for Structuring a Substrate - The invention relates to a method for structuring a substrate. According to said method, at least one mask with at least one opening is arranged over the substrate, and unmasked regions are modified in relation to masked regions of the substrate in order to form structures. The inventive method is characterised in that the representation of the mask opening on and/or in the substrate has smaller dimensions than those of the actual mask opening. The invention also relates to a device for carrying out said method.12-25-2008
20090092929PIEZOELECTRIC-ACTUATOR DRIVING DEVICE AND EXPOSURE APPARATUS INCLUDING THE SAME - A driving device includes a plurality of laminated units formed by alternately stacking piezoelectric element layers and electrode layers, a failure detecting unit configured to detect failure of the laminated units, a plurality of switches provided corresponding to the laminated units and configured to enable and disable current supply to the laminated units, and a driving circuit configured to supply a current for driving to a normal laminated unit of the laminated units, on the basis of an output from the failure detecting unit.04-09-2009
20100159398LAYERED RADIATION-SENSITIVE MATERIALS WITH VARYING SENSITIVITY - A method for fabricating a radiation-cured structure is provided. The method includes the steps of providing a first radiation-sensitive material and applying a second radiation-sensitive material to the first radiation-sensitive material. The first radiation-sensitive material has a first sensitivity. The second radiation-sensitive material has a second sensitivity different from the first sensitivity. At least one mask is placed between at least one radiation source and the first and second radiation-sensitive materials. The mask has a plurality of substantially radiation-transparent apertures. The first and second radiation-sensitive materials are then exposed to a plurality of radiation beams through the radiation-transparent apertures in the mask to form a first construct in the first radiation-sensitive material and a second construct in the second radiation-sensitive material. The first construct and the second construct cooperate to form the radiation-cured structure.06-24-2010
20090104569Plane waves to control critical dimension - The present invention describes an aperture including: an opaque plate; two sliver openings located in the opaque plate, the two sliver openings having rectangular shapes, the two sliver openings being parallel to each other.04-23-2009
20100261120MIRROR FOR GUIDING A RADIATION BUNDLE - A mirror serves for guiding a radiation bundle. The mirror has a basic body and a coating of a reflective surface of the basic body, the coating increasing the reflectivity of the mirror. A heat dissipating device serves for dissipating heat deposited in the coating. The heat dissipating device has at least one Peltier element. The coating is applied directly on the Peltier element. A temperature setting apparatus has at least one temperature sensor for a temperature of the reflective surface. A regulating device of the Temperature setting apparatus can be connected to the at least one Peltier element and is signal-connected to the at least one temperature sensor. The result is a mirror in which a heat dissipating capacity of the heat dissipating device is improved.10-14-2010
20100159400COMPOSITION FOR REMOVING A PHOTORESIST PATTERN AND METHOD OF FORMING A METAL PATTERN USING THE COMPOSITION - A composition for removing a photoresist pattern includes about 5 percent by weight to about 20 percent by weight of an aminoethoxy ethanol, about 2 percent by weight to about 10 percent by weight of a polyalkylene oxide, about 10 percent by weight to about 30 percent by weight of a glycol ether compound, and a remainder of an aprotic polar solvent including a nitrogen. Thus, the photoresist pattern can be easily removed from a substrate, thereby improving the removing ability of the composition. In addition, a residual amount of the photoresist pattern may be minimized, thereby improving the reliability of removing the photoresist pattern.06-24-2010
20080213705PATTERN EXPOSURE METHOD AND PATTERN EXPOSURE APPARATUS - A pattern exposure method and a pattern exposure apparatus in which the throughput is improved with an inexpensive apparatus and without a low running cost. Output faces of a plurality of laser beams emitted from a plurality of semiconductor lasers respectively are arranged in two directions. One of the directions is the same direction as the scanning direction of a polygon mirror while the other is a direction crossing the scanning direction of the polygon mirror. In this event, the array pitch of the output faces arranged in the direction crossing the scanning direction of the polygon mirror is made equal to resolution of an exposure pattern. In this event, the wavelength of each laser may be made not longer than 410 nm.09-04-2008
20100227279Methods for producing codes for microparticles - Methods and apparatus are provided for forming a plurality of encoded microparticles with a printing process to define a code for identifying the microparticles. In some embodiments the printing process includes printing steps performed with photolithography.09-09-2010
20100239983Methods Of Forming Patterns On Substrates - A method of forming a pattern on a substrate includes forming spaced first features over a substrate. The spaced first features have opposing lateral sidewalls. Material is formed onto the opposing lateral sidewalls of the spaced first features. That portion of such material which is received against each of the opposing lateral sidewalls is of different composition from composition of each of the opposing lateral sidewalls. At least one of such portion of the material and the spaced first features is densified to move the at least one laterally away from the other of the at least one to form a void space between each of the opposing lateral sidewalls and such portion of the material.09-23-2010
20100159401PROJECTION OPTICAL SYSTEM, EXPOSURE SYSTEM, AND EXPOSURE METHOD - A liquid immersion type projection optical system that can stably prevent the outflow of immersion liquid into inside of an optical system and can maintain good imaging performance. In the projection optical system of the present invention, an optical path between a light transmitting member (Lp) disposed closest to a second surface (W) side and the second surface is filled with a liquid (Lm06-24-2010
20100255426MIRROR ARRAYS FOR MASKLESS PHOTOLITHOGRAPHY AND IMAGE DISPLAY - Micromirrors and micromirror arrays described herein are useful, for example in maskless photolithography systems and methods and projection display devices and methods. According to one aspect, the micromirrors comprise a polymer structural layer and a reflective dielectric multilayer for selective reflection and/or redirection of incoming electromagnetic radiation. According to another aspect, incorporation of a reflective dielectric multilayer allows for use of polymer structural materials in micromirrors and prevents damage to such polymer materials due to excessive heating from absorption of electromagnetic radiation, as the reflective dielectric multilayers are highly reflective and minimize heating of the micromirror components. According to yet a further aspect, top down fabrication methods are described herein for making a micromirror comprising a polymer structural layer and a reflective dielectric multilayer.10-07-2010
20100221669METHOD, PROGRAM PRODUCT AND APPARATUS FOR PERFORMING DOUBLE EXPOSURE LITHOGRAPHY - A method of generating complementary masks based on a target pattern having features to be imaged on a substrate for use in a multiple-exposure lithographic imaging process. The method includes the steps of: defining an initial H-mask corresponding to the target pattern; defining an initial V-mask corresponding to the target pattern; identifying horizontal critical features in the H-mask having a width which is less than a predetermined critical width; identifying vertical critical features in the V-mask having a width which is less than a predetermined critical width; assigning a first phase shift and a first percentage transmission to the horizontal critical features, which are to be formed in the H-mask; and assigning a second phase shift and a second percentage transmission to the vertical critical features, which are to be formed in the V-mask. The method further includes the step of assigning chrome to all non-critical features in the H-mask and the V-mask. The non-critical features are those features having a width which is greater than or equal to the predetermined critical width. The non-critical features are formed in the H-mask and the V-mask utilizing chrome. The target pattern is then imaged on the substrate by imaging both the H-mask and V-mask.09-02-2010
20090208879SUBSTRATE PROCESSING METHOD, PROGRAM, COMPUTER-READABLE RECORDING MEDIUM, AND SUBSTRATE PROCESSING SYSTEM - In the present invention, a substrate on which a resist film has been formed is transferred to an aligner and subjected to exposure processing. The substrate is then subjected to post-exposure baking in a second processing system. The substrate is then transferred again to the aligner and subjected to exposure processing. The substrate for which exposure processing for the second time has been finished is transferred to a first processing system and again subjected to post-exposure baking. The time periods from the ends of the exposure processing to the starts of the post-exposure baking for the first time and the second time are controlled to be equal. According to the present invention, in pattern forming processing in which exposure processing is performed a plurality of times between the resist film forming processing and the developing treatment, a pattern with a desired dimension can be finally formed.08-20-2009
20090208878Lithographic System, Lithographic Apparatus and Device Manufacturing Method - A lithographic system includes two lithographic apparatus. A first lithographic apparatus is configured to project a patterned radiation beam onto a first target portion of a substrate. The second lithographic apparatus includes an interferometric arrangement configured to split the radiation beam and to recombine the split beams so as to produce an interference pattern. A masking arrangement is configured to selectively transmit a portion of the interference pattern and a projection system is configured to project the selectively transmitted portion of the interference pattern onto a second target portion of the substrate.08-20-2009
20080311529IMMERSION MULTIPLE-EXPOSURE METHOD AND IMMERSION EXPOSURE SYSTEM FOR SEPARATELY PERFORMING MULTIPLE EXPOSURE OF MICROPATTERNS AND NON-MICROPATTERNS - This invention discloses an immersion multiple-exposure method including a first exposure step of performing, using a first mask, immersion exposure of a photoresist film formed on a substrate, a cleaning step of clearing the surface of the substrate, and a second exposure step of performing immersion exposure of the photoresist film using a second mask. No heating process is performed between the first exposure step and the second exposure step.12-18-2008
20090111060EXPOSURE METHOD - An exposure method suitable for a photolithography process is described. First, a wafer with a group of alignment marks formed thereon is provided. A first alignment step is conducted by using the group of the alignment marks on the wafer to obtain a first calibration data. Next, a second alignment step is conducted by using a portion of the group of alignment marks on the wafer to obtain a second calibration data. The first calibration data is then compared with the second calibration data to obtain a comparison result. Next, a photoresist exposure step is conducted on the wafer according to the comparison result.04-30-2009
20110117503EXPOSURE APPARATUS AND DEVICE FABRICATION METHOD - The present invention provides an exposure apparatus including an illumination optical system, the illumination optical system includes a mirror array optical element including a plurality of mirror elements having reflecting surfaces which reflect light from a light source, the plurality of mirror elements having angles that can be independently controlled with respect to the light from the light source, a first optical system configured to guide the light from the light source to the mirror array optical element, and receive light reflected by a predetermined mirror element, an angle of which is controlled to guide the light reflected by the reflecting surface to the reticle, a second optical system which is present on a side of the light source with respect to the first optical system, and a third optical system which is present on a side of the reticle with respect to the first optical system.05-19-2011
20100297561LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD - A lithographic apparatus is provided with an optical encoder measurement system having an irradiation system to direct an irradiation beam to a first scale. The system has optics to direct a primary diffracted beam diffracted from the first scale upon irradiation by the irradiation beam to a second scale and a detector to detect a secondary diffracted beam after interference and a second diffraction of the primary diffracted irradiation beam on the second scale to measure the position of the first scale with respect to the second scale.11-25-2010
20100310991POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND PATTERN-FORMING METHOD USING THE SAME - A positive resist composition for immersion exposure comprises: (A) a resin capable of increasing its solubility in an alkali developer by an action of an acid, and (B) a compound capable of generating an acid upon irradiation with actinic ray or radiation, wherein the acid satisfies conditions of V≧230 and V/S≦0.93 taking van der Waals volume of the acid as V (Å12-09-2010
20130137046PHASE DIFFERENCE LAYER LAMINATED BODY FOR THREE DIMENSIONAL LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A phase difference layer laminated body used in a three-dimensional liquid crystal display device, wherein unit cells are divided into groups for left and right eyes, which are given different degrees of polarization, thereby creating a three-dimensional image, further wherein the phase difference layer laminated body has a base material having orientability, and a phase difference layer made of a liquid crystal material that can form a nematic phase and formed in a pattern with two different portions, and the liquid crystal material in each of two different portions is oriented to have different refractive index anisotropy each other that conforms to the two different degrees of polarization and fixed as it is.05-30-2013
20100310992DEVICE AND METHOD FOR EXPOSING A PHOTO MATERIAL - The invention relates to a method and an imagesetter by means of which a photo material comprising a plurality of zones to be exposed individually, such as hundreds of thousands of such zones, can be done in an economical manner and particularly in acceptable exposure times. To this end, a method is provided for exposing a photo material comprising a plurality of zones to be exposed, preferably disposed regularly, particularly line by line, and having a digitally derived image, by means of which method a continuous relative motion is carried out between the photo material and the imagesetter, and the exposition of the individual zones takes place during said motion.12-09-2010
20090035707RHEOLOGY-CONTROLLED CONDUCTIVE MATERIALS, METHODS OF PRODUCTION AND USES THEREOF - Compositions comprising at least one conductive nanomaterial and at least one rheology control additive are disclosed. These compositions can be used to form a film for uses requiring sufficient conductivity and light transparency. Methods of forming a conductive composition include: providing at least one conductive nanomaterial, providing at least one rheology control additive, and blending the at least one conductive nanomaterial and the at least one rheology control additive together to form the conductive composition. Methods of forming patterned transparent conductive coatings include: providing and applying a layer comprising at least one photosensitive or photoimageable composition to a surface, providing and applying a layer comprising at least one conductive nanomaterial and at least one rheology control additive, exposing and developing the layered material, and treating the layer comprising the at least one rheology control additive in order to remove at least part of the rheology control additive. Coating compositions, films, patterned films and structures containing these films and patterned films are also described.02-05-2009
20110039213METHOD AND SYSTEM FOR PHOTOLITHOGRAPHIC FABRICATION WITH RESOLUTION FAR BELOW THE DIFFRACTION LIMIT - A method and system for photolithography is provided. The system includes a photoresist comprising a photoinitiator and a prepolymer resin. The system further includes a first light source operable to generate at least a first beam of light which is focused on a first area of the photoresist. The first beam of light is configured to excite the photoinitiator. The system further includes a second light source operable to generate at least a second beam of light which is focused on a second area of the photoresist, the second beam of light configured to deactivate at least temporarily the photoinitiator excited by the first beam of light. The first area and second area overlap at least partially. A time difference of at least 10 ns exists between the photoinitiator being excited by the first beam of light and the photoinitiator initiating polymerization.02-17-2011
20110212403METHOD AND APPARATUS FOR ENHANCED DIPOLE LITHOGRAPHY - Provided is a lithography system that includes a source for providing energy, an imaging system configured to direct the energy onto a substrate to form an image thereon, and a diffractive optical element (DOE) incorporated with the imaging system, the DOE having a first dipole located in a first direction and a second dipole located in the first direction or a second direction perpendicular the first direction. The first dipole includes a first energy-transmitting region spaced a first distance from a center of the DOE. The second dipole includes a second energy-transmitting region spaced a second distance from the center of the DOE. The first distance is greater than the second distance.09-01-2011
20100112493Method for Producing a Plurality of Regularly Arranged Nanoconnections on a Substrate - A method for producing a plurality of regularly arranged nanoconnections on a substrate using an elastic masking layer forming cracks. Said method comprises the following steps: the masking layer is microstructured in order to produce at least one defined region provided with a masking over which the nanoconnections are to extend; cracks are produced in the masking layer; the material forming the nanoconnections is applied at least to the structures of the masking layer in the cracks and to the non-masked regions of the substrate; the masking layer with the is removed, and the defined region is covered with an essentially rectangular masking strip, over the width of which the nanoconnections are to extend the length of the strip being longer than the width; and a self-organized regular crack pattern comprising a plurality of crack lines is produced by inducing stress in the masking strip, such that a plurality of regularly arranged nanoconnections is formed over the at least one defined region.05-06-2010
20110097671ANTISTATIC TREATMENT AGENT, AND ANTISTATIC FILM, COATED ARTICLE AND PATTERN FORMING METHOD USING THE AGENT - The invention provides an antistatic treatment agent having an ability of preventing resist film thinning phenomenon in a chemically amplified resist, an antistatic film, a coated article and a pattern forming method using such antistatic treatment agent, in particular, the invention provides an antistatic treatment agent comprising an aqueous solvent-soluble electroconductive polymer, a diamine (divalent) or polyamine (polyvalent) aliphatic basic compound and an anionic surfactant, an antistatic film, a coated article and a pattern forming method using such antistatic treatment agent. As the aqueous solvent-soluble electroconductive polymer, a π-conjugated electroconductive polymer having a Brönsted acid group is a sulfonic acid group is preferred and it is preferable that the amount of the diamine (divalent) or polyamine (polyvalent) aliphatic basic compound be from 0.1 to 75 mol % based on the total number of moles of the basic compounds.04-28-2011
20110076622POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND PATTERN-FORMING METHOD USING THE SAME - A positive resist composition for immersion exposure comprises: (A) a resin containing at least one repeating unit having a fluorine atom and increasing a solubility of the resin in an alkali developer by an action of an acid; and (B) a compound capable of generating an acid upon irradiation with one of an actinic ray and radiation.03-31-2011
20100112494APPARATUS AND METHOD FOR MEASURING THE OUTGASSING AND EUV LITHOGRAPHY APPARATUS - An apparatus and method for measuring an outgassing in a EUV lithography apparatus. The method includes activating a surface within the EUV lithography apparatus, inducing the outgassing, analyzing a residual gas. Defining a maximum partial pressure, recording a mass spectrum of the residual gas, converting the highest-intensity peaks of the mass spectrum into sub-partial pressures, summing the sub-partial pressures, and comparing the summed result with the defined maximum partial pressure. An EUV lithography apparatus includes a residual gas analyzer and a stimulation unit comprised of at least on of an electron source, an ion source, a photon source, and a plasma source. A measurement setup for measuring the outgassing from components by analyzing the residual gas includes a residual gas analyzer, a vacuum chamber, and a stimulation unit comprised of at least on of an electron source, an ion source, a photon source, and a plasma source.05-06-2010
20100003620EXPOSURE METHOD - An exposure method includes the steps of illuminating a mask that has a contact hole pattern using an illumination light, and projecting, via a projection optical system, the contact hole pattern onto a substrate to be exposed, wherein three lights among diffracted lights from the contact hole pattern interfere with each other, wherein said mask is an attenuated phase shift mask, and wherein said illumination light forms a radial polarization illumination.01-07-2010
20090317751Optical arrangement of autofocus elements for use with immersion lithography - A lithographic projection apparatus includes an optical element through which a substrate is exposed with an exposure beam. A space between the optical element and the substrate is filled with liquid during the exposure. A gap is formed between a member and a surface of the optical element through which the exposure beam does not pass. The liquid is supplied to the gap.12-24-2009
20090239178OPTICAL ATTENUATOR PLATE, EXPOSURE APPARATUS, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD - There is disclosed an optical attenuator plate and an optical attenuator plate to adjust a quantity of light from a light source, which has a plurality of high-transmittance regions with a relatively high transmittance, and in which shapes of the high-transmittance regions are so defined that an intensity distribution of diverging light or converging light having passed through the optical attenuator plate becomes uniform.09-24-2009
20120202157OPTICAL UNIT, ILLUMINATION OPTICAL APPARATUS, EXPOSURE APPARATUS, AND DEVICE MANUFACTURING METHOD - An illumination optical apparatus has an optical unit. The optical unit has a light splitter to split an incident beam into two beams; a first spatial light modulator which can be arranged in an optical path of a first beam; a second spatial light modulator which can be arranged in an optical path of a second beam; and a light combiner which combines a beam having passed via the first spatial light modulator, with a beam having passed via the second spatial light modulator; each of the first spatial light modulator and the second spatial light modulator has a plurality of optical elements arranged two-dimensionally and controlled individually.08-09-2012
20080213704MEASUREMENT APPARATUS, EXPOSURE APPARATUS, AND DEVICE FABRICATION METHOD - The present invention provides a measurement apparatus that includes a measurement unit inserted on an image plane of an optical system to be measured, and a measurement mask inserted on an object plane of the optical system to be measured, the measurement unit including a light-shielding board including a slit-like image-side opening part, and the measurement mask including a rectangular light-shielding part being configured to form a projection image having a longitudinal dimension and lateral dimension longer than a longitudinal dimension and lateral dimension of the image-side opening part on the image plane of the optical system to be measured, and object-side opening parts formed on two sides of the light-shielding part, wherein the measurement apparatus measures flare generated by the optical system to be measured by measuring a light quantity by the light quantity sensor while the projection image covers the image-side opening part.09-04-2008
20080254394STRUCTURE FOR PATTERN FORMATION, METHOD FOR PATTERN FORMATION, AND APPLICATION THEREOF - A structure for pattern formation adapted for optically forming a pattern, characterized by comprising: a photocatalyst-containing layer provided on a substrate, the photocatalyst-containing layer containing a material of which the wettability is variable through photocatalytic action upon pattern-wise exposure.10-16-2008
20110027721LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD - A map of the surface of a substrate is generated at a measurement station. The substrate is then moved to where a space between a projection lens and the substrate is filled with a liquid. The substrate is then aligned using, for example, a transmission image sensor and, using the previous mapping, the substrate can be accurately exposed. Thus the mapping does not take place in a liquid environment.02-03-2011
20100323300DIGITAL OPTICAL CHEMISTRY MICROMIRROR IMAGER - An apparatus and method for catalyzing a reaction on a substrate (12-23-2010
20100323299PROJECTION OBJECTIVE FOR IMMERSION LITHOGRAPHY - A projection objective suitable for immersion microlithography is designed as a single-waist system with five lens groups, and has a first lens group of negative refractive power, a second lens group of positive refractive power, a third lens group of negative refractive power, a fourth lens group of positive refractive power and a fifth lens group of positive refractive power. The fourth lens group has an entrance surface (E) that lies in the vicinity of a point of inflection of a marginal ray height between the third lens group (LG12-23-2010
20100323298Photosensitive composition, microfabrication method using the same, and microfabricated structure thereof - Disclosed herein may be a photosensitive composition, a microfabricated structure including the same, a device including the microfabricated structure, and methods of fabricating the microfabricated structure and the device. The photosensitive composition, including a multifunctional photosensitive resin, a two-photon photosensitizer, an organic solvent, and a silver compound, may be subjected to two- or three-dimensional microfabrication, thus realizing the microfabricated structure containing silver nanoparticles.12-23-2010
20100159399LITHOGRAPHIC APPARATUS WITH GAS PRESSURE MEANS FOR CONTROLLING A PLANAR POSITION OF A PATTERNING DEVICE CONTACTLESS - A lithographic apparatus includes a position controller configured to control a position of a patterning device in its planar direction by selectively pressing at least one of the side faces of the patterning device. The position controller includes a gas pressure supply and one or more outflow openings directed towards at least one side face of the patterning device so as to exert pressurized gas on this side face in order to control the position of the patterning device in its planar direction in a contactless manner.06-24-2010
20100068655POSITION MEASURING MODULE, POSITION MEASURING APPARATUS, STAGE APPARATUS, EXPOSURE APPARATUS AND DEVICE MANUFACTURING METHOD - A position measuring module includes a movement mirror provided on a movable member and having a reflecting surface along a first axis direction; detection-light units which are arranged for a plurality of measuring axes disposed in the first axis direction respectively and which irradiate, onto the movement mirror, detection lights in a second axis direction intersecting the first axis direction; a reference-light unit which includes a fixed mirror fixed to a member different from the movable member and which irradiates a reference light onto the fixed mirror; a plurality of optical path combining elements which combines detection optical paths for the detection lights reflected by the movement mirror in relation to the measuring axes respectively or combines the detection optical paths for the detection lights and a reference optical path for the reference light via the reference-light unit; and a detecting section which detects an interference fringe brought about by interference between the detection light and the reference light coming into the detecting section via the optical path combining elements and which measures a position of the movable member in the second axis direction based on a detection result of the interference fringe.03-18-2010
20090197211LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD - Liquid is supplied to a space between the projection system of a lithographic apparatus and a substrate. A flow of gas towards a vacuum inlet prevents the humid gas from escaping to other parts of the lithographic apparatus. This may help to protect intricate parts of the lithographic apparatus from being damaged by the presence of humid gas.08-06-2009
20100151393METHOD OF MANUFACTURING NANO-STRUCTURE AND METHOD OF MANUFACTURING A PATTERN USING THE METHOD - According to an example embodiment of the present invention, a photoresist pattern is formed on a base substrate including a neutral layer. A sacrifice structure including a first sacrifice block and a second sacrifice block is formed on the base substrate having the photoresist pattern, and the sacrifice structure is formed from a first thin film including a first block copolymer. Thus, a chemical pattern is formed to form a nano-structure. Therefore, the nano-structure may be easily formed on a substrate having a large size by using a block copolymer, and productivity and manufacturing reliability may be improved.06-17-2010
20100068654METHOD FOR CREATING GRAY-SCALE FEATURES FOR DUAL TONE DEVELOPMENT PROCESSES - A method of patterning a substrate using a dual-tone development process is described. The patterning method comprises forming a layer of radiation-sensitive material on a substrate, wherein the layer of radiation-sensitive material comprises a dual tone resist. Thereafter, the patterning method comprises performing one or more exposures of the layer of radiation-sensitive material to one or more patterns of radiation, wherein at least one of the one or more exposures comprises using a mask having a dual-tone mask pattern region configured for printing dual tone features and a half-tone mask pattern region configured for printing half-tone features. Furthermore, the half-tone mask pattern region is optimized for use with the dual tone resist.03-18-2010
20110305993HYDROPHILIC NANOPOROUS MATERIALS - The present application discloses a method for preparing and rendering hydrophilic a nanoporous material of a polymer matrix which has a porosity of 0.1-90% (v/v), such that the ratio between the fmal water absorption (% (w/w)) and the porosity (% (v/v)) is at least 0.05, the method comprising the steps of: (a) preparing a precursor material comprising at least one polymeric component and having a first phase and a second phase; (b) removal of at least a part of the first phase of the precursor material prepared in step (a) so as to leave behind a nanoporous material of the polymer matrix; (c) irradiating at least a part of said nanoporous material with light of a wave length of in the range of 250-400 nm (or 200-700 nm) in the presence of oxygen and/or ozone. Corresponding hydrophilic nanoporous materials are also disclosed.12-15-2011
20110305994NANO PLASMONIC PARALLEL LITHOGRAPHY - A method for replicate a pattern from a pre-patterned surface to a final substrate with in parallel approach lithography, the pre-patterned surface comprises a transparent substrate having a pre-patterned suitable metal; the method comprising the steps of: covering the final substrate with a chemical composition (resist) that is sensitive to Plasmon emitted light or waves; bringing the pre-patterned surface and the final substrate together to a proximity distance in the nanometer range, preferably 0 to 30 nm or more preferably 0 to 10 nm from the surface; illuminating the pre-patterned surface with plasmonic emitted light or waves, and exposing the final substrate to the plasmonic emitted light or waves to make a replica from the said pre-patterned surface.12-15-2011
20100304308PROCESS FOR THICK FILM CIRCUIT PATTERNING - The invention relates to forming an electrically functional pattern on a substrate and to a process for using a photosensitive element in combination with a sheet having a thick film composition applied to a support. The process for forming a pattern having electrically functional properties on a substrate comprises the steps of: (a) providing a photosensitive layer having a tacky surface disposed on a substrate; (b) image-wise exposing the photosensitive layer to form an imaged layer having tacky and non-tacky areas; (c) applying a sheet comprising at least one layer of a thick film composition disposed on a support to the imaged layer wherein the imaged layer is in contact with the thick film composition of the sheet; (d) heating the transfer sheet and the photohardenable layer to increase the adhesive strength between the thick film composition and tacky areas of the imaged layer; (e) removing the support wherein the thick film composition remains on the support in the non-tacky areas of the imaged layer and the thick film composition substantially adheres to the tacky areas of the imaged layer forming a patterned article; and (f) heating the thick film composition of the patterned article.12-02-2010
20120301832SUBSTRATE WARPAGE REMOVAL APPARATUS, SUBSTRATE PROCESSING APPARATUS, SUBSTRATE WARPAGE REMOVAL METHOD, SUBSTRATE PROCESSING METHOD AND STORAGE MEDIUM - There is provided a substrate warpage removal apparatus and method which can remove warpage of a substrate which has a patterned surface having a film with a pattern, and a non-patterned surface having a film without a pattern. The substrate warpage removal apparatus includes: a holding plate configured to hold a substrate; a processing liquid supply pipe, provided on the side of the non-patterned surface of the substrate, configured to supply an etching liquid to the surface to remove a surface film; and a first laser displacement meter and a second laser displacement meter configured to detect warpage of the substrate. When the controller, based on signals from the first laser displacement meter and the second laser displacement meter, determines that warpage of the substrate has been eliminated, the controller stops the supply of an etching liquid from the processing liquid supply pipe.11-29-2012
20100190113OPTICAL ELEMENT, EXPOSURE APPARATUS USING THIS, AND DEVICE MANUFACTURING METHOD - On a multilayer film mirror, a protective layer is formed having a varied composition in the depth direction. The protective layer includes an interface side layer formed on a thin film layer, i.e., the outermost layer of a multilayer film, a surface side layer provided on the interface side layer as the outermost surface of an optical element, and an intermediate layer. The interface side layer has properties such as providing relative absorption of non-exposure light from a light source. The surface side layer suppresses oxidation of the surface of the multilayer film.07-29-2010
20120009525Method and apparatus for printing a periodic pattern with a large depth of focus - A method for printing a desired pattern into a photosensitive layer that includes providing a mask bearing a pattern of linear features that are parallel to a first direction, arranging the layer parallel to and separated from said mask, generating substantially monochromatic light, and illuminating the mask pattern with said light over a range of angles of incidence in a plane parallel to said first direction, at substantially a single angle in an orthogonal plane of incidence and so that the light of each angle of incidence transmitted by the mask forms a light-field component at the layer whereby the integration of said components prints the desired pattern, wherein the range of angles is selected so that the integration of said components is substantially equivalent to an average of the range of transversal intensity distributions formed between Talbot image planes by light at one of the angles of incidence.01-12-2012
20100266964Graphene oxide deoxygenation - A graphene oxide (GO) target is exposed to light having power sufficient to initiate a deoxygenation reaction of the GO target. The deoxygenation reaction of the GO target transforms the GO target to graphene.10-21-2010
20120058434LITHOGRAPHIC APPARATUS, DEVICE MANUFACTURING METHOD, AND METHOD OF APPLYING A PATTERN TO A SUBSTRATE - A lithographic apparatus is arranged to transfer a pattern from a patterning device onto a substrate, in which a measuring subsystem comprises one or (preferably) more alignment & level sensors (AS, LS) directed at the substrate near a patterning location of a patterning subsystem. The alignment sensor(s) is operable to recognize and measure alignment marks (P03-08-2012
20120070786METHOD FOR MONITORING PHOTOLITHOGRAPHY PROCESS AND MONITOR MARK - A method for monitoring a photolithography process includes providing a monitor mark having high sensitivity of the focus of the photolithography process, transferring the monitor mark together with the product patterns through the photolithography process onto a substrate, and measuring the deviation dimension of the monitor mark formed on the substrate to real-time monitor the focus of the photolithography process.03-22-2012
20090130605RESIST COMPOSITION - A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.05-21-2009
20090130604Solution for immersion exposure and immersion exposure method - The object is to resolve a finer pattern with a narrower line/space width by immersion lithography technology in the manufacture of a semiconductor or the like. A liquid for use in immersion exposure includes a saturated hydrocarbon compound as a main component, wherein the content of an impurity or impurities having an unsaturated bond or a heteroatom in its structure is respectively as follows: (i) 2 μg/mL or less in total for a compound having a conjugated unsaturated bond; (ii) 30 μg/mL or less in total for a compound having no conjugated unsaturated bond but having a non-conjugated unsaturated bond; (iii) 15 μg/mL or less in total for amines having no unsaturated bond; and (iv) 100 μg/mL or less in total for a heterocyclic compound, alcohols, ethers and a halogen-containing compound, other than above compounds (i) to (iii).05-21-2009
20100248159PATTERNING VIA OPTICAL-SATURABLE TRANSISIONS - An optical material system for nanopatterning is provided that includes one or more material systems having spectrally selective reversible and irreversible transitions by saturating one of the spectrally selective reversible transitions with an optical node retaining a single molecule in a configuration and exposing the single molecule to its spectrally irreversible transitions to form a pattern.09-30-2010
20100248158HIGH-VOLUME MANUFACTURING MASSIVE E-BEAM MASKLESS LITHOGRAPHY SYSTEM - The present disclosure provides a maskless lithography apparatus. The apparatus includes a plurality of writing chambers, each including: a wafer stage operable to secure a wafer to be written and a multi-beam module operable to provide multiple radiation beams for writing the wafer; an interface operable to transfer wafers between each of the writing chambers and a track unit for processing an imaging layer to the wafers; and a data path operable to provide a set of circuit pattern data to each of the multiple radiation beams in each of the writing chambers.09-30-2010
20100209857Lithography Process for the Continuous Direct Writing of an Image - The invention relates to photolithography techniques and more particularly to maskless photolithography techniques in which a feature is written directly onto a substrate by means of a high-energy beam, typically a laser beam.08-19-2010
20120237880Methods of Forming Patterns on Substrates - A method of forming a pattern on a substrate includes forming spaced first features over a substrate. The spaced first features have opposing lateral sidewalls. Material is formed onto the opposing lateral sidewalls of the spaced first features. That portion of such material which is received against each of the opposing lateral sidewalls is of different composition from composition of each of the opposing lateral sidewalls. At least one of such portion of the material and the spaced first features is densified to move the at least one laterally away from the other of the at least one to form a void space between each of the opposing lateral sidewalls and such portion of the material.09-20-2012
20100173250METHOD FOR A MULTIPLE EXPOSURE, MICROLITHOGRAPHY PROJECTION EXPOSURE INSTALLATION AND A PROJECTION SYSTEM - In a method for multiply exposing at least one substrate coated with a photosensitive layer, a first exposure is carried out in accordance with a first set of exposure parameters on a first projection system (07-08-2010
20120171625IMMERSION EXPOSURE APPARATUS AND METHOD OF OPERATING THEREOF - An immersion exposure apparatus includes a light source, a projection lens set, a photomask, a liquid medium, and a supporting stage. The projection lens set has a front surface facing the light source and a first back surface facing away from the light source. The photomask has a second back surface facing away from the light source. The photomask is disposed between the light source and the projection lens set. The liquid medium is disposed the front surface and the second back surface. The liquid medium contacts the front surface and the second back surface. The supporting stage is disposed at a side of the first back surface of the projection lens set. A substrate is disposed on the supporting stage. The liquid medium may be water or other liquid.07-05-2012
20120214104METHOD FOR PRODUCING MICROSTRUCTURE - The disclosed method for producing a microstructure can form a complicated three-dimensionally formed microstructure with few steps.08-23-2012
20120077130METHOD FOR GENERATING A PLURALITY OF OPTIMIZED WAVEFRONTS FOR A MULTIPLE EXPOSURE LITHOGRAPHIC PROCESS - A simplified version of a multiexpose mask optimization problem is solved in order to find a compressed space in which to search for the solution to the full problem formulation. The simplification is to reduce the full problem to an unconstrained formulation. The full problem of minimizing dark region intensity while maintaining intensity above threshold at each bright point can be converted to the unconstrained problem of minimizing average dark region intensity per unit of average intensity in the bright regions. The extrema solutions to the simplified problem can be obtained for each source. This set of extrema solutions is then assessed to determine which features are predominantly printed by which source. A minimal set of extrema solutions serves as a space of reduced dimensionality within which to maximize the primary objective under constraints. The space typically has reduced dimensionality through selection of highest quality extrema solutions.03-29-2012
20100028813BACKSIDE CLEANING OF SUBSTRATE - A pellicle cover, system, and method for cleaning a photomask are disclosed. A pellicle cover is disposed over a photomask and pellicle without damaging the markings surrounding the mask pattern area. The pellicle cover can be practicably implemented in an improved photomask cleaning system and process in which the backside of the photomask may be cleaned without removing the pellicle from the patterned surface.02-04-2010
20120225388PATTERN FORMING METHOD AND METHOD FOR PRODUCING DEVICE - In a pattern forming method, a first L & S pattern is formed on a wafer; a first protective layer, a second L & S pattern having a perpendicular periodic direction to that of the first L & S pattern, and a photoresist layer are formed to cover the first L & S pattern; a third pattern having first apertures is formed in the photoresist layer to be overlapped with a part of the second L & S pattern; second apertures are formed in the first protective layer via the first apertures; and a part of the first L & S pattern is removed via the second apertures. Accordingly, a pattern including a non-periodic portion finer than a resolution limit of an exposure apparatus is formed.09-06-2012
20090061363Method for on-press developing laser sensitive lithographic printing plate - A method of on-press developing a high-speed laser sensitive lithographic printing plate with ink and/or fountain solution is described. The plate comprises on a substrate a photosensitive layer soluble or dispersible in ink and/or fountain solution and capable of hardening upon exposure to a laser. The plate is exposed with a laser and on-press developed with ink and/or fountain solution. At least a portion of the on-press development is performed with the plate under a yellow-red light, in substantial darkness, or under a light that is different from the light for printing and does not cause hardening of the photosensitive layer during on-press development.03-05-2009
20120315583METHODS OF GENERATING THREE-DIMENSIONAL PROCESS WINDOW QUALIFICATION - In a method of generating a three-dimensional process window qualification, a photoresist layer is coated on a substrate including an underlying structure. A plurality of circular-shaped regions of the substrate are distinguished into 1 to n regions to partition the substrate into a center portion and an edge portion, n being a natural number greater than 2. 1 to n exposing ranges are set, including a common exposing condition for the 1 to n regions. A photoresist pattern is fox led by exposing each shot portion in the 1 to n regions using a split exposing condition in the 1 to n exposing ranges. The photoresist pattern is detected, and a normal photoresist pattern with respect to each of the 1 to n regions is selected to generate the three-dimensional process window qualification.12-13-2012
20120082943DIFFRACTIVE PHOTO MASKS AND METHODS OF USING AND FABRICATING THE SAME - An exemplary embodiment of the present invention provides a diffractive photo-mask comprising a body element, a plurality of interference/image-forming hologram gratings, and a zero-order beam blocking element. The plurality of interference/image-forming hologram gratings can be located on or in the body element. The plurality of interference/image-forming hologram gratings are configured to diffract a light beam to produce one or more functional elements surrounded by a high-spatial-frequency periodic optical-intensity distribution at a substrate plane when the light beam is incident upon the diffractive photo-mask. The zero-order beam blocking element is configured to block zero-order diffracted beams when the light beam is incident upon the diffractive photo-mask04-05-2012
20120082942METHOD AND SYSTEM FOR MODIFYING PHOTORESIST USING ELECTROMAGNETIC RADIATION AND ION IMPLANTATION - A method of reducing surface roughness of a resist feature disposed on a substrate includes generating a plasma having a plasma sheath and ions therein. A shape of the boundary between the plasma and plasma sheath is modified using a plasma sheath modifier, so that a portion of the boundary facing the substrate is not parallel to a plane defined by the substrate. During a first exposure, the resist feature is exposed to electromagnetic radiation having a desired wavelength and the ions are accelerated across the boundary having the modified shape toward the resist features over an angular range.04-05-2012
20120258407Multifield incoherent Lithography, Nomarski Lithography and multifield incoherent Imaging - A new optical method and apparatus, applicable to optical lithography, to imaging or to machine vision, including: 10-11-2012
20110123934SCANNING EXPOSURE APPARATUS - A scanning exposure apparatus includes a light source, a stage configured to move while having a substrate mounted thereon, a control unit configured to control the light source and the stage such that the substrate is exposed to radiant energy while the speed of the stage is changed, a filter having a transmittance distribution according to a change in speed of the stage and being disposed so as to be insertable into a light path for exposure, and a driving unit configured to scan the filter in synchronization with the scanning of the stage.05-26-2011
20110123933POLYMER, COMPOSITION FOR PROTECTIVE LAYER, AND PATTERNING METHOD USING THE SAME - A polymer, including a polymerized monomer, the monomer being represented by the following Chemical Formula 1:05-26-2011
20080299500EXPOSURE APPARATUS AND DEVICE MANUFACTURING METHOD - An exposure apparatus configured to expose resist which is coated on a wafer to light includes a station through which the wafer is transferred between an inside of the exposure apparatus and a coating/developing apparatus configured to coat the wafer with the resist and develop the resist coated on the wafer. The exposure apparatus further includes a controller that is configured to calculate a second time at which heat treatment is to be started in the coating/developing apparatus after the exposure of the wafer but before the development of the resist based on a first time at which the exposure of the wafer ends, and send information about the second time to the coating/developing apparatus.12-04-2008
20080299499EXPOSURE METHOD, METHOD OF MANUFACTURING PLATE FOR FLAT PANEL DISPLAY, AND EXPOSURE APPARATUS - An exposure method facilitating the formation of a fine pattern on a plate. The exposure method illuminates a mask with illumination light and exposes a plate using a mask pattern of the mask. The method includes scanning the plate relative to the mask in a scanning direction, which is an in-plane direction of the plate, and exposing the plate while scanning the plate relative to the mask. The exposing of the plate while scanning the plate relative to the mask includes performing fine period exposure with a fine period mask pattern formed in a first region of the mask and middle density exposure with a middle density mask pattern formed in a second region of the mask. The first region and the second region are arranged adjacent to each other in the scanning direction.12-04-2008
20110003254LAYOUT DECOMPOSITION METHOD APPLICABLE TO A DUAL-PATTERN LITHOGRAPHY - A layout decomposition method, applicable to a double pattern lithography, includes the steps of: putting at least a stitch on each of a plurality of sub-patterns of an initial layout pattern at preset intervals to thereby divide the each of the plurality of sub-patterns into a plurality of unit blocks each selectively labeled as a first region or a second region such that the first region and the second region in same said sub-pattern alternate, wherein any two neighboring ones of said unit blocks attributed to any two neighboring ones of said sub-patterns, respectively, are labeled as the first region and the second region, respectively; reducing the stitches of any two neighboring ones of said unit blocks attributed to any two neighboring ones of said sub-patterns, respectively, so as to generate a first layout pattern having a minimum number of stitches; and reducing the stitches of any two contiguous ones of said unit blocks of each of said sub-patterns in the first layout pattern, so as to generate a second layout pattern having a minimum number of stitches.01-06-2011
20120264066Optical Imaging Writer System - System and method for applying mask data patterns to substrate in a lithography manufacturing process are disclosed. In one embodiment, the method includes providing a parallel imaging writer system which has a plurality of spatial light modulator (SLM) imaging units arranged in one or more parallel arrays; receiving a mask data pattern to be written to a substrate, processing the mask data pattern to form a plurality of partitioned mask data patterns corresponding to different areas of the substrate, assigning one or more SLM imaging units to handle each of the partitioned mask data pattern, controlling the plurality of SLM imaging units to write the plurality of partitioned mask data patterns to the substrate in parallel, controlling movement of the plurality of SLM imaging units to cover the different areas of the substrate, and controlling movement of the substrate to be in synchronization with continuous writing of the plurality of partitioned mask data patterns.10-18-2012
20100129757SYNTHESIS OF ACYLARYLENES AND HYPERBRANCHED POLY(ACLARYLENE)S BY METAL-FREE CYCLOTRIMERIZATION OF ALKYNES - The present invention provides a new metal-free cyclotrimerization reaction of alkynes to produce a 1,3,5-triacylarylene or 1,3,5-triacylbenzene. This reaction is catalyzed by secondary amines, is strictly regioselective, highly functionality-tolerant, and the resulting product can be obtained in high yields. This reaction can be further applied for the preparation of novel branched (co)polymers bearing the triacylarylenes as structural units. The preparation of the (co)polymers is carried out as a one-pot single-step reaction procedure, giving branched oligomers and polymers in high yields up to 90%. The produced (co)polymers are also processible, easily film-forming, and thermally stable.05-27-2010
20130017499PROCESS FOR PRODUCTION OF PHOTORESIST PATTERNAANM Ueno; KoseiAACI HokkaidoAACO JPAAGP Ueno; Kosei Hokkaido JPAANM Misawa; HiroakiAACI HokkaidoAACO JPAAGP Misawa; Hiroaki Hokkaido JP - Disclosed is a process for producing a photoresist pattern, comprising the steps of: preparing a photomask that comprises a metal nano structure having a metal film arranged thereon and can generate a plasmon resonance, on a mask substrate; preparing a photoresist film that is formed on the surface of the resist substrate and is sensible to light having a wavelength (X); bringing the photomask into contact with the photoresist film; and exposing the photoresist film to light having a wavelength (Y) that is longer than the wavelength (X) and is shorter than the peak wavelength of a plasmon resonance band of the metal nano structure, thereby transferring a pattern of the metal film in the photomask onto the photoresist film.01-17-2013
20130017498TUNABLE TWO-MIRROR INTERFERENCE LITHOGRAPHY SYSTEM - A two-beam interference lithography system offers large-area nanopatterning with tunability of pattern periodicities. The tunable feature is achieved by placing two rotatable mirrors in the two expanded beam paths which can conveniently be regulated for the designed pattern periodicities. While the effective interference pattern coverage is mainly determined by the optical coherence length and mirror size, the minimum pattern coverage area is as large as the effective coherence length of the laser and the selected mirror size over a wide range of periodicities.01-17-2013
20130017497SYNTHESIS AND APPLICATIONS OF SOLUBLE PENTACENE PRECURSORS AND RELATED COMPOUNDS - The present disclosure relates to methods and systems for synthesis of bridged-hydropentacene, hydroanthracene and hydrotetracene from the precursor compounds pentacene derivatives, tetracene derivatives, and anthracene derivatives. The invention further relates to methods and systems for forming thin films for use in electrically conductive assemblies, such as semiconductors or photovoltaic devices.01-17-2013
20110143286LASER APPARATUS, LIGHT THERAPY APPARATUS, EXPOSURE APPARATUS, DEVICE MANUFACTURING METHOD, AND OBJECT INSPECTION APPARATUS - The present invention greatly reduces the likelihood that fiber fusion will occur. A laser apparatus comprises an excitation light source and an optical amplifier unit, which optically amplifies by receiving excitation light that is output from the excitation light source and that transits an optical fiber. A monitor unit monitors the power level of the excitation light transmitted from the excitation light source to the optical amplifier unit side via the optical fiber. At the initial start of the output of the excitation light from the excitation light source, once the excitation light is being output at the prescribed power level by the excitation light source, the control unit performs control such that the excitation light at a power level higher than the prescribed power level is output if the power level monitored by the monitor unit is greater than or equal to a prescribed value when the excitation light at the prescribed power level is being output from the excitation light source and such that the output of the excitation light is stopped if the power level monitored by the monitor unit is less than the prescribed value when the excitation light at the prescribed power level is being output from the excitation light source.06-16-2011
20080241762Photothermographic material and image forming method - A photothermographic material including at least a photosensitive silver halide, a non-photosensitive organic silver salt, and a reducing agent for thermal development, and further including at least two dyes having maximum absorption wavelengths different from each other, wherein the difference between the maximum absorption wavelengths is from 10 nm to 50 nm, a maximum absorption wavelength of a first dye corresponds to a wavelength of a first laser for imagewise exposure, and a maximum absorption wavelength of a second dye corresponds to a wavelength of a second laser for imagewise exposure. Moreover, an image forming method using a sheet of the photothermographic material, wherein a part of the sheet is imagewise exposed using a laser while another part of the sheet that has already been imagewise exposed is thermally developed, and a distance between the exposure portion and thermal developing portion is 50 cm or less, is provided.10-02-2008
20080227036Method for producing structure - According to an aspect of an embodiment, a method for manufacturing a structure composed of a photoreactive resin comprises the steps of: forming the photoreactive resin on a sheet member soluble in water; exposing the photoreactive resin selectively to a radiation activating the photoreactivity to produce the structure; and dissolving the sheet member in water after the exposing step.09-18-2008
20080220380Enhancing photoresist performance using electric fields - Electric fields may be advantageously used in various steps of photolithographic processes. For example, prior to the pre-exposure bake, photoresists that have been spun-on the wafer may be exposed to an electric field to orient aggregates or other components within the unexposed photoresist. By aligning these aggregates or other components with the electric field, line edge roughness may be reduced, for example in connection with 193 nanometer photoresist. Likewise, during exposure, electric fields may be applied through uniquely situated electrodes or using a radio frequency coil. In addition, electric fields may be applied at virtually any point in the photolithography process by depositing a conductive electrode, which is subsequently removed during development. Finally, electric fields may be applied during the developing process to improve line edge roughness.09-11-2008
20080220379PATTERN FORMING METHOD AND PATTERN FORMATION APPARATUS - The present invention provides a pattern forming method and a pattern formation apparatus capable of suppressing variations in line width dimensions of a resist pattern. The pattern forming method of the present invention is a pattern forming method comprising a first step for coating a photoresist onto a wafer W, a second step for selectively exposing the wafer W coated with the photoresist, a third step for carrying out baking treatment on the exposed wafer W, and a fourth step for carrying out development treatment on the baked wafer W; wherein, in the third step, the baking treatment is carried out by forming a first atmosphere containing at least moisture, and then replacing the first atmosphere and forming a second atmosphere not containing moisture, followed by continuing the baking treatment.09-11-2008
20080206685Exposure method, method for manufacturing flat panel display substrate, and exposure apparatus - An exposure method and exposure apparatus optimal for the formation of a fine pattern of an electronic device, such as a flat panel display. The exposure method and apparatus provides a high resolution and is inexpensive. The exposure method exposes a pattern onto a substrate with the use of an optical system that performs interference exposure for exposing a pattern parallel to a predetermined scanning direction with an interference optical system and variable shaping exposure with a variable shaping optical system while performing relative scanning in the scanning direction.08-28-2008
20130115558SELECTIVE PHOTO-INDUCED PROTEIN IMMOBILIZATION USING BOVINE SERUM ALBUMIN - Provided is a biomaterial immobilizing method including immobilizing a bovine serum albumin on a substrate, providing a biomaterial on the substrate immobilized with the bovine serum albumin, and irradiating an ultraviolet light onto the substrate provided with the bovine serum albumin and the biomaterial to immobilize the biomaterial selectively on the substrate immobilized with the bovine serum albumin.05-09-2013
20130130182Apparatus and method of direct writing with photons beyond the diffraction limit - Direct-write lithography apparatus and methods are disclosed in which a transducer image and an image of crossed interference fringe patterns are superimposed on a photoresist layer supported by a substrate. The transducer image has an exposure wavelength and contains bright spots, each corresponding to an activated pixel. The interference image has an inhibition wavelength and contains dark spots where the null points in the crossed interference fringes coincide. The dark spots are aligned with and trim the peripheries of the corresponding bright spot to form sub-resolution photoresist pixels having a size smaller than would be formed in the absence of the dark spots.05-23-2013
20100279232IMMERSION LITHOGRAPHIC APPARATUS AND A DEVICE MANUFACTURING METHOD - An immersion lithographic apparatus has a surface that in use is contacted by the immersion liquid and the surface has a surface roughness R11-04-2010
20080199817RESIST PATTERN FORMING METHOD - A resist pattern forming method includes preparing a photomask for generating near-field light having an intensity distribution. The photomask has a light-transmissible base member, and a light-blocking film. The film has a micro-aperture adapted to expose an object to near-field light seeping out from the micro-aperture. The photomask has a periodic structure and a shift of a phase. The shift exists between recesses or projections adjacent to the micro-aperture. A difference in the intensity distribution of the near-field light in the area of the aperture is reduced. The photomask is arranged close to a photoresist film on a substrate. Light from a light source irradiates the photoresist film by way of the photomask to form a latent image based on the micro-aperture, and the photoresist film is developed to form a resist pattern on the substrate based on the latent image.08-21-2008
20080199816Method of Automatic Fluid Dispensing for Imprint Lithography Processes - Disclosed herein is an automatic fluid dispensing method and system for dispensing fluid on the surface of a plate-like material, or substrate, including a semiconductor wafer for imprint lithography processes. The dispensing method uses fluid dispenser and a substrate stage that may generate relative lateral motions between a fluid dispenser tip a substrate. Also described herein are methods and devices for creating a planar surface on a substrate using a substantially unpatterned planar template.08-21-2008
20130149649LITHOGRAPHIC APPARATUS AND A DEVICE MANUFACTURING METHOD - A lithographic apparatus having: a substrate table constructed to hold a substrate; a projection system configured to project a patterned radiation beam onto a target portion of the substrate; a substrate surface actuator including a fluid opening for fluid flow therethrough from/onto a facing surface facing the substrate surface actuator to generate a force between the substrate surface actuator and the facing surface, the facing surface being a top surface of the substrate or a surface substantially co-planar with the substrate; and a position controller to control the position and/or orientation of a part of the facing surface by varying fluid flow through the fluid opening to displace the part of the facing surface relative to the projection system.06-13-2013
20100316960PATTERNING NANO-SCALE PATTERNS ON A FILM COMPRISING UNZIPPING POLYMER CHAINS - The invention concerns a method for patterning a surface of a material. A substrate having a polymer film thereon is provided. The polymer is a selectively reactive polymer (e.g. thermodynamically unstable): it is able to unzip upon suitable stimulation. A probe is used to create patterns on the film. During the patterning, the film is locally stimulated for unzipping polymer chains. Hence, a basic idea is to provide a stimulus to the polymeric material, which in turn spontaneously decomposes e.g. into volatile constituents. For example, the film is thermally stimulated in order to break a single bond in a polymer chain, which is sufficient to trigger the decomposition of the entire polymer chain.12-16-2010
20110287371COMPONENT OF AN IMMERSION SYSTEM, AN IMMERSION LITHOGRAPHIC APPARATUS AND A DEVICE MANUFACTURING METHOD - A component of an immersion system of a lithographic apparatus is disclosed having a superhydrophobic surface which in use is not exposed to DUV radiation. Also, there is disclosed a surface of a lithographic apparatus which may come into contact with immersion liquid and is a threshold distance from a surface exposed in use to the projection beam has a superhydrophobic property.11-24-2011
20110318695ARBITRARY PATTERN DIRECT NANOSTRUCTURE FABRICATION METHODS AND SYSTEM - Methods of producing a nanostructure in a target film are provided. The method includes selectively irradiating at least one focusing element of a near-field focusing array that is in near-field focusing relationship with a target film in a manner sufficient to produce a nanostructure from the target film. Also provided are systems for practicing methods of the invention, as well as objects produced thereby.12-29-2011
20120021361RADIATION-PROTECTION DEVICE - A radiation-protection device is provided that includes a substrate and a surface structure formed on the substrate. The surface structure has an arrangement and interacts with radiation and the substrate to at least (a) substantially transmit or attenuate radiation at a wavelength and an energy below a threshold energy, and (b) substantially reflect radiation at the wavelength and an energy above the threshold energy.01-26-2012
20120028194PATTERN FORMATION METHOD USING LEVENSON-TYPE MASK AND METHOD OF MANUFACTURING LEVENSON-TYPE MASK - A method of forming a pattern including a first pattern portion having a first minimum dimension and a second pattern portion having a second minimum dimension includes a first exposure step of performing exposure using a Levenson-type mask and a second exposure step of performing exposure using a half tone-type mask. When second minimum dimension is 1.3 time or more than the first minimum dimension, the exposure amount of the second exposure step is set to be equal to or smaller than the exposure amount of the first exposure step.02-02-2012

Patent applications in class Forming nonplanar surface

Patent applications in all subclasses Forming nonplanar surface