Class / Patent application number | Description | Number of patent applications / Date published |
430314000 | Etching of substrate and material deposition | 35 |
20080213701 | POLYMER FOR ORGANIC ANTI-REFLECTIVE COATING LAYER AND COMPOSITION INCLUDING THE SAME - A polymer which has siloxane group at a main chain thereof and a composition including the same, for forming an organic anti-reflective coating layer are disclosed. The polymer for forming an organic anti-reflective coating layer is represented by following Formula. | 09-04-2008 |
20080261157 | SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed is a method of manufacturing a distributed feedback semiconductor laser device. In order to form a grating in only a channel, an etching mask, which is used when forming a ridge waveguide, is allowed to remain. A portion of sides of an ohmic contact layer is removed. A metal layer that remains at locations other than a location of the grating is removed by a lift-off method. According to an embodiment of the invention, a holographic exposure method or a nanoimprint method is used in forming a grating of the distributed feedback laser device, and the grating is formed in a self-aligned manner. The distributed feedback laser device that is manufactured according to the embodiment of the invention can be formed by using a technology and a structure that are suitable for mass production. Further, excellent reproducibility can be ensured and production costs can be decreased in the distributed feedback laser device, thereby complementing a disadvantage of an existing distributed feedback laser device. | 10-23-2008 |
20080261158 | Method of manufacturing printed circuit board - A method of manufacturing a printed circuit board is disclosed. The method includes: forming a relievo pattern and an intaglio pattern on a surface of a base plate; forming a metal plate, which has a metal pattern that corresponds with a shape of the relievo pattern and the intaglio pattern, by plating a surface of the relievo pattern and a surface of the intaglio pattern; separating the metal plate from the base plate; pressing the metal plate onto an insulation layer with the metal pattern facing the insulation layer; and removing a portion of the metal plate such that the metal pattern is exposed. Since this method does not use carriers, there is no need for a chemical etching process for carrier removal. | 10-23-2008 |
20080299495 | Methods of fabricating metal contact structures for laser diodes using backside UV exposure - Methods of fabricating a metal contact structure for a laser diodes are provided, wherein the method comprises providing a UV transparent semiconductor substrate, a UV transparent semiconductor epilayer defining a ridge disposed between etched epilayer edges, the epilayer being disposed over the UV transparent semiconductor substrate, and a UV opaque metal layer disposed over the epilayer ridge, applying at least one photoresist layer (positive photoresist, image reversal photoresist, or negative photoresist) over the opaque metal layer and epilayer edges, and selectively developing regions of the photoresist layer via backside exposure to UV light with the opaque metal layer used as a photolithographic mask. | 12-04-2008 |
20090004603 | Method for Forming Fine Pattern of Semiconductor Device - A method for forming a fine pattern of a semiconductor device comprises: forming anti-reflection coating patterns over an underlying layer of a semiconductor substrate using an anti-reflection coating composition comprising a silicon-containing polymer; forming a photoresist pattern between the anti-reflection coating patterns using a photoresist composition comprising a silicon-containing polymer; and patterning the underlying layer using the photoresist patterns as an etching mask. | 01-01-2009 |
20090004604 | METHOD FOR FORMING FINE PATTERN OF SEMICONDUCTOR DEVICE - A method for forming a fine pattern of a semiconductor device comprises forming a spin-on-carbon layer over an underlying layer, forming an anti-reflection pattern including a silicon containing polymer with a first etching mask pattern, forming a photoresist pattern including a silicon containing polymer with a second etching mask pattern between elements of the first etching mask pattern, and etching the spin-on-carbon layer with the etching mask patterns to reduce the process steps and the manufacturing cost, thereby obtaining a uniform pattern profile. | 01-01-2009 |
20090004605 | Semiconductor Processing Methods of Transferring Patterns from Patterned Photoresists to Materials - The invention includes a semiconductor processing method. A first material comprising silicon and nitrogen is formed. A second material is formed over the first material, and the second material comprises silicon and less nitrogen, by atom percent, than the first material. An imagable material is formed on the second material, and patterned. A pattern is then transferred from the patterned imagable material to the first and second materials. The invention also includes a structure comprising a first layer of silicon nitride over a substrate, and a second layer on the first layer. The second layer comprises silicon and is free of nitrogen. The structure further comprises a third layer consisting essentially of imagable material on the second layer. | 01-01-2009 |
20090023100 | Patterning a surface comprising silicon and carbon - Patterning a surface, comprising at least one feature having silicon coupled to a substrate, is described herein. In one embodiment a method is described for patterning a surface which comprises at least one feature having silicon and at least one feature having carbon coupled to a substrate. The surface is coated with 3-(trimethoxysilyl)propyl methacrylate, and a photoresist is applied the 3-(trimethoxysilyl)propyl methacrylate coated surface. The photoresist is imaged and the surface is etched. The photoresist is then removed. | 01-22-2009 |
20090092927 | IMAGE DRUM AND FABRICATING METHOD THEREOF - A method of fabricating an image drum includes preparing a hollow drum body having a slot extending in a longitudinal direction, preparing a printed circuit board (PCB) having a plurality of board terminals, mounting the PCB inside the hollow drum body with a fixing member such that the board terminals of the PCB are placed in the slot of the hollow drum body, coating a first insulating layer on an outer circumference of the hollow drum body, forming a plurality of ring electrodes on the first insulating layer corresponding to the board terminals of the PCB, in which a portion of ring electrodes which corresponds to the board terminals of the PCB is non-continuous, exposing the board terminals below non-continuous area of the ring electrodes by etching the first insulating layer with the ring electrodes as an etching mask, and forming a connecting electrode to electrically connect the board terminals to the ring electrodes. | 04-09-2009 |
20090162792 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A spacer is formed on side and top portions of a photoresist pattern after a mask process is performed so that the spacer may be used as an etching mask. The spacer is formed using a polymer deposition layer which is a low temperature oxide or nitride that can be deposited on side and top portions of the photoresist pattern at 75˜220° C. after the mask process is performed. A method for manufacturing a semiconductor device includes forming a bottom anti-reflection coating film on an etch-target layer, patterning a photoresist layer formed on the bottom anti-reflection coating film, forming an insulation layer on a patterned photoresist layer and the bottom anti-reflection coating film, etching back the insulation layer to form a spacer on sidewalls of the patterned photoresist layer, and etching the bottom anti-reflection coating film and the etching target layer exposed by the spacer to form a fine pattern. | 06-25-2009 |
20090170035 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes forming a first mask pattern over an etch target layer, forming a second mask pattern over the etch target layer, forming spacers at sidewalls of the first mask pattern and the second mask pattern, and etching the etch target layer with an etching mask where the second mask pattern is removed. The method improves a profile of a pad pattern and critical dimension uniformity. | 07-02-2009 |
20090170036 | METHOD FOR MANUFACTURING TRANSPARENT ELECTRODE PATTERN AND METHOD FOR MANUFACTURING ELECTRO-OPTIC DEVICE HAVING THE TRANSPARENT ELECTRODE PATTERN - Provided are a method for manufacturing a transparent electrode pattern and a method for manufacturing an electro-optic device having the transparent electrode pattern. The method for manufacturing the transparent electrode pattern includes forming a transparent electrode on a light-transmissive substrate, patterning the transparent electrode by removing a portion of the transparent electrode, and forming an insulating protective layer in an edge region of the patterned transparent electrode through a printing process. In accordance with the method, the insulating protective layer is formed in the edge region of the patterned transparent electrode through the printing process so that an apparatus and method for manufacturing the insulating protective layer can be simplified, resulting in a decrease in manufacturing cost. | 07-02-2009 |
20090202949 | Producing method of wired circuit board - A producing method of a wired circuit board includes the steps of preparing a two-layer base material including a metal supporting layer and an insulating layer, covering an upper surface of the insulating layer and respective side end surfaces of the insulating layer and the metal supporting layer with a photoresist, placing a photomask so as to light-shield an end portion and a portion where a conductive layer is to be formed of the upper surface, exposing to light the photoresist covering the upper surface from above the photoresist via the photomask, exposing to light the photoresist covering the respective side end surfaces from below the photoresist, forming an exposed portion of the photoresist into a pattern by removing an unexposed portion thereof to form a plating resist, and forming an end-portion conductive layer and the conductive layer. | 08-13-2009 |
20090220893 | Method for Patterning a Semiconductor Wafer - A method for etching a pattern on a surface is disclosed. A mask layer is disposed over a surface and a resist is disposed over the mask layer. The resist is exposed to light through the mask exposing primary pattern and sidelobe regions. The resist is developed and the mask layer is etched according to the resist pattern. A first material is deposited over the mask layer, wherein a gap is formed beneath the material and over the primary pattern region. The material is etched back so that the gap is exposed, and the primary pattern region is etched using the first material as a mask. | 09-03-2009 |
20090246706 | PATTERNING RESOLUTION ENHANCEMENT COMBINING INTERFERENCE LITHOGRAPHY AND SELF-ALIGNED DOUBLE PATTERNING TECHNIQUES - A method for providing regular line patterns using interference lithography and sidewall patterning techniques is provided according to one embodiment. The method comprising may include producing regularly spaced parallel lines on a template using interference lithography techniques and then depositing sidewalls on the longitudinal sides of the regularly spaced parallel lines using sidewall patterning techniques. Various deposition and etching steps may also be included. The embodiments of the invention may provide regular line patterns with a line density half the interference lithography line density. Various lithography techniques may also be used to crop rounded connecting resulting from the sidewall patterning and/or to alter portions of the line pattern. | 10-01-2009 |
20090246707 | Semiconductor buried grating fabrication method - Methods for forming grating profiles in semiconductor laser structures comprise the steps of providing a semiconductor wafer comprising a wafer substrate, an etch stop layer disposed over the wafer substrate, a grating layer disposed over the etch stop layer, an etch mask layer disposed over the grating layer, and a photoresist layer disposed over the etch mask layer, forming a photoresist grating pattern, transferring the photoresist grating pattern into the grating layers via dry etching, and removing the photoresist layer, selectively wet etching the grating layer to form the grating profile in the grating layer. The placement of the grating layer between the etch mask and etch stop layers controls the selective wet etching step. The method also comprises removing the etch mask layer via selective wet etching without altering the grating profile, and regrowing an upper cladding layer to produce the semiconductor laser structure. | 10-01-2009 |
20090305167 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - In the method for manufacturing a semiconductor device, a resist film is formed on a substrate and is processed to be provided with openings to form a first resist pattern. Additive-containing layers containing an additive that changes a state of the resist film to a soluble state for a developer are formed so as to cover the first resist pattern. A first resin film having a nature of changing to a soluble state for the developer by containing the additive is formed in the openings of the first resist pattern. The additive is diffused into the first resist pattern and the first resin film to form first and second additive-diffusing portions which can be solved in the developer. The first and second additive-diffusing portions are removed by the developer to form second resist pattern made of remaining portions in the first resist pattern and the first resin film. | 12-10-2009 |
20100035187 | METHOD FOR SMOOTHING PRINTED CIRCUIT BOARDS - A method for smoothing a printed circuit board (PCB), comprising: providing a PCB having a first smooth outer surface and an opposite second outer surface, the second outer surface including a smooth region and a plurality of dimples; applying a liquid photoresist layer onto the second outer surface of the PCB to fill the dimples; solidifying the liquid photoresist in the dimples to obtain a solidified photoresist layer; polishing the solidified photoresist layer until a surface thereof being coplanar with the smooth region; and polishing the entire second outer surface until the solidified photoresist layer is removed, thereby obtaining a plain outer surface parallel to the first smooth outer surface. | 02-11-2010 |
20100040982 | METHOD FOR FORMING AN OPENING - A method for forming an opening is disclosed. First, a semiconductor substrate is provided, in which the semiconductor substrate includes at least one metal interconnects therein. A stacked film is formed on the semiconductor substrate, in which the stacked film includes at least one dielectric layer and one hard mask. The hard mask is used to form an opening in the stacked film without exposing the metal interconnects, and the hard mask is removed thereafter. A barrier layer is later deposited on the semiconductor substrate to cover a portion of the dielectric layer and the surface of the metal interconnects. | 02-18-2010 |
20100075261 | Methods for Manufacturing a Contact Grid on a Photovoltaic Cell - Processes for fabricating a contact grid for a photovoltaic cell generally includes providing a photovoltaic cell having an antireflective coating disposed on a sun facing side, the photovoltaic cell comprising a silicon substrate having a p-n junction; soft stamping a pattern of a UV sensitive photoresist and/or polymer onto the antireflective coating; exposing the UV sensitive photoresist and/or polymer to ultraviolet radiation to cure the UV sensitive photoresist and/or polymer; etching the pattern to form openings in the antireflective coating that define the contact grid; stripping the UV sensitive photoresist and/or polymer; and depositing a conductive metal into the openings defined by the pattern. The metal based paste can be aluminum based, which can be annealed at a relatively low temperature. | 03-25-2010 |
20100086875 | Method of making sub-resolution pillar structures using undercutting technique - A method of making a device includes forming an underlying mask layer over an underlying layer, forming a first mask layer over the underlying mask layer, patterning the first mask layer to form first mask features, undercutting the underlying mask layer to form underlying mask features using the first mask features as a mask, removing the first mask features, and patterning the underlying layer using at least the underlying mask features as a mask. | 04-08-2010 |
20100112486 | METHOD AND SYSTEM FOR PROVIDING A PERPENDICULAR MAGNETIC RECORDING HEAD - A method and system for providing a PMR pole in a magnetic recording transducer including an intermediate layer are disclosed. The method and system include providing a mask on the intermediate layer. The mask includes a line having at least one side. A hard mask layer is provided on the mask. At least a portion of the hard mask layer resides on the side(s) of the line. At least part of the hard mask layer on the side(s) of the line is removed. Thus, at least a portion of the line is exposed. The line is then removed, providing an aperture in the hard mask corresponding to the line. The method also includes forming a trench in the intermediate layer under the aperture. The trench top is wider than its bottom. The method further includes providing a PMR pole, at least a portion of which resides in the trench. | 05-06-2010 |
20100209854 | Method For Producing An Electro-Optical Printed Circuit Board With Optical Waveguide Structures - An electro-optical printed circuit board contains electrical conductor tracks on the one hand and optical waveguide structures on the other hand. The optical waveguide structures comprise a bottom layer, a core layer and a cladding layer. Visible areas are applied to the printed circuit board, and the core layer is applied later both to the bottom layer as well as the visible areas and structured both on the bottom layer as well as the visible areas. This structure is then transferred to the visible areas, e.g. by etching. Reference marks are thus produced which contain the information on the actual position of the optical waveguide structures. | 08-19-2010 |
20100291488 | Manufacturing method for multilayer core board - A method for manufacturing a cone board including: preparing a core insulation layer including one or more resins selected from the group consisting of epoxy resins and bismaleimide triazine resins; and forming a first nickel layer on at least one surface of the core insulation layer by electroless plating | 11-18-2010 |
20100330506 | METHOD FOR TRANSFERRING AN EPITAXIAL LAYER FROM A DONOR WAFER TO A SYSTEM WAFER APPERTAINING TO MICROSYSTEMS TECHNOLOGY - For bonding a donor wafer ( | 12-30-2010 |
20110027719 | PHOTOMASK ETCHING METHOD FOR CHEMICAL VAPOR DEPOSITION FILM - The present invention discloses a photomask etching method for a CVD film, which comprises steps: exposing an optical resin layer to an ultraviolet ray through a photomask; baking the optical resin layer to gasify the exposed portion of the optical resin layer with the unexposed portion remaining; using a CVD method to form a film on the substrate filling the gasified area and covering the remaining portion of the optical resin layer; exposing the entire film to the ultraviolet ray, and baking the entire substrate at a high temperature to gasify the remaining optical resin layer and remove the film adhering to the remaining optical resin layer to obtain a patterned film. The present invention can achieve higher accuracy of the patterned film with lower equipment cost and lower manufacturing cost. | 02-03-2011 |
20110123931 | High-precision ceramic substrate preparation process - A high-precision ceramic substrate preparation process is disclosed to bond a dry film to a metal layer on a ceramic plate, and then to coat a conductive layer on the metal layer and an anti-etching metal layer on the conductive layer after application of an exposing and developing process to form a predetermined circuit pattern in the dry film, and then to remove the dry film and to etch the metal layer, and then to bond an oxygen-free tape, which is prepared from a compound of ceramic powder, glass powder and pasting agent, to the conductive layer, and then to sinter the oxygen-free tape in an oxygen-free sintering furnace into a retaining wall, and then to coat an anti-oxidation bonding layer on the surface of the conductive layer. | 05-26-2011 |
20110171582 | Three Dimensional Integration With Through Silicon Vias Having Multiple Diameters - A method is disclosed which includes patterning a photoresist layer on a substrate of a structure, removing a first portion of the photoresist layer to expose a first area of the substrate, etching the first area to form a cavity having a first depth, removing a second portion of the photoresist to expose an additional area of the substrate, and etching the cavity to expose a first conductor in the structure and the additional area to expose a second conductor in the structure. | 07-14-2011 |
20110195360 | METHODS TO FABRICATE A PHOTOACTIVE SUBSTRATE SUITABLE FOR MICROFABRICATION - A method of fabrication and device with holes for electrical conduction made by preparing a photosensitive glass substrate comprising at least silica, lithium oxide, aluminum oxide, and cerium oxide, masking a design layout comprising one or more holes to form one or more electrical conduction paths on the photosensitive glass substrate, exposing at least one portion of the photosensitive glass substrate to an activating energy source, exposing the photosensitive glass substrate to a heating phase of at least ten minutes above its glass transition temperature, cooling the photosensitive glass substrate to transform at least part of the exposed glass to a crystalline material to form a glass-crystalline substrate and etching the glass-crystalline substrate with an etchant solution to form the one or more depressions or through holes for electrical conduction in the device. | 08-11-2011 |
20110200948 | Method of Fabricating Micro-Devices - A new and novel method utilizing current nano-technological processes for fabricating a range of micro-devices with significantly expanded capabilities, unique functionalities at microscopic levels, enhanced degree of flexibilities, reduced costs and improved performance in the fields of bioscience and medicine is disclosed in the within patent application. Micro-devices fabricated using the disclosed nano-technological techniques have significant improvements in many areas over the existing, conventional methods. Such improvements include, but are not limited to reduced overall costs, early disease detection, targeted drug delivery, targeted disease treatment and reduced degree of invasiveness in treatment. Compared with existing, conventional approaches, the said inventive approach disclosed in this patent application is much more microscopic, sensitive, accurate, precise, flexible and effective. This novel approach is able to deliver a superior level of performance in medical treatments over the existing modalities. | 08-18-2011 |
20110223541 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes: forming a first photoresist pattern with a first opening over an etch target layer; forming a second photoresist pattern with a plurality of second openings over the first photoresist pattern; and forming a plurality of patterns by etching the etch target layer by using the first photoresist pattern and the second photoresist pattern as an etch barrier. | 09-15-2011 |
20110250541 | PATTERN FORMING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND MATERIAL FOR FORMING COATING LAYER OF RESIST PATTERN - To provide a pattern forming method, which contains: forming a first resist pattern on a processing surface using a first resist composition; forming a coating layer using a coating material so as to cover a surface of the first resist pattern; applying a second resist composition over the first resist pattern above which the coating layer has been formed so as not to dissolve the first resist pattern with the second resist composition to thereby form a second resist film; and selectively exposing the second resist film to exposure light and developing the second resist film to thereby expose the first resist pattern to the air, as well as forming a second resist pattern in an area of the processing surface where the first resist pattern has not been formed. | 10-13-2011 |
20110300487 | METHOD FOR PRODUCING A MATRIX OF INDIVIDUAL ELECTRONIC COMPONENTS AND MATRIX PRODUCED THEREBY - The invention relates to a method for producing a matrix of electronic components, comprising a step of producing an active layer on a substrate, and a step of individualizing the components by forming trenches in the active layer at least until the substrate emerges. The method comprises steps of depositing a layer of functional material on the active layer, depositing a photosensitive resin on the layer of material in such a way as to fill said trenches and to form a thin film on the upper face of the components, at least partially exposing the resin to radiation while underexposing the portion of resin in the trenches, developing the resin in such a way as to remove the properly exposed portion thereof, removing the functional material layer portion that shows through after the development step, and removing the remaining portion of resin. | 12-08-2011 |
20120288802 | METHOD OF FORMING GATE CONDUCTOR STRUCTURES - A method of forming gate conductor structures. A substrate having thereon a gate electrode layer is provided. A multi-layer hard mask is formed overlying the gate electrode layer. The multi-layer hard mask comprises a first hard mask, a second hard mask, and a third hard mask. A photoresist pattern is formed on the multi-layer hard mask. A first etching process is performed to etch the third hard mask, using the photoresist pattern as a first etch resist, thereby forming a patterned third hard mask. A second etching process is performed to etch the second hard mask and the first hard mask, using the patterned third hard mask as a second etch resist, thereby forming a patterned first hard mask. A third etching process is performed to etch a layer of the gate electrode layer, using the patterned first hard mask as a third etch resist. | 11-15-2012 |
20150301447 | Self Aligned Patterning With Multiple Resist Layers - A method for using self aligned multiple patterning with multiple resist layers includes forming a first patterned resist layer onto a substrate, forming a spacer layer on top of the first patterned resist layer such that spacer forms on side walls of features of the first resist layer, and forming a second patterned resist layer over the spacer layer and depositing a masking layer. The method further includes performing a planarizing process to expose the first patterned resist layer, removing the first resist layer, removing the second resist layer, and exposing the substrate. | 10-22-2015 |