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Electron beam imaging

Subclass of:

430 - Radiation imagery chemistry: process, composition, or product thereof

430269000 - IMAGING AFFECTING PHYSICAL PROPERTY OF RADIATION SENSITIVE MATERIAL, OR PRODUCING NONPLANAR OR PRINTING SURFACE - PROCESS, COMPOSITION, OR PRODUCT

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DocumentTitleDate
20080261152METHOD OF MANUFACTURING MOTHER STAMPER AND METHOD OF MANUFACTURING STAMPER - A method of manufacturing a mother stamper comprises: a first resist layer formation process for forming a first resist layer on a substrate; a first electron beam irradiation process for irradiating electron beam at a first pattern on the first resist layer; a first development process for developing the first resist layer to remove the non-exposed area; a second resist layer formation process for forming a second resist layer on the substrate onto which the first resist layer remains; a second electron beam irradiation process for irradiating electron beam at a second pattern on the second resist layer; a second development process for developing the second resist layer to remove the exposed area that has been exposed in the second electron beam irradiation process; and an etching process for etching the substrate to provide a grooved pattern with different depths.10-23-2008
20120183905CHARGED-PARTICLE BEAM DRAWING APPARATUS AND ARTICLE MANUFACTURING METHOD - A drawing apparatus for drawing a pattern on a substrate by using a charged-particle beam comprises: a blanking deflector which deflects the charged-particle beam; a stopping aperture member which can block the charged-particle beam deflected by the blanking deflector; a catalyst which generates, from a gas, an active species for decomposing a deposit formed on the stopping aperture member; and a supply mechanism which supplies the gas to the catalyst. In a removing operation of removing the deposit, while the supply mechanism supplies the gas to the catalyst, the charged-particle beam irradiates a region which is not irradiated with the charged-particle beam in a drawing operation of drawing the pattern, thereby generating the active species from the gas by the catalyst positioned in at least the region, and removing the deposit by decomposing the deposit by the generated active species.07-19-2012
20110195359SELF-CONTAINED PROXIMITY EFFECT CORRECTION INSPIRATION FOR ADVANCED LITHOGRAPHY (SPECIAL) - A lithography method is disclosed. An exemplary lithography method includes providing an energy sensitive resist material on a substrate; providing a desired pattern; performing a lithography process on the substrate, wherein the lithography process includes exposing the energy sensitive resist material to a charged particle beam, such that the desired pattern is transferred to the energy sensitive resist material; and directing the charged particle beam from an off state to a defocus state, wherein the defocus state compensates for the backscattered energy, thereby reducing proximity effects.08-11-2011
20130078578RESIST DEVELOPER, METHOD FOR FORMING A RESIST PATTERN AND METHOD FOR MANUFACTURING A MOLD - The disclosed resist developer is used when developing by irradiating an energy beam onto a resist layer containing a polymer of α-chloromethacrylate and α-methylstyrene for rendering or exposure, and contains a fluorocarbon-containing solvent (A) and an alcohol solvent (B), the latter of which has higher solubility relative to the resist layer than the former.03-28-2013
20130078577CHARGED PARTICLE BEAM DRAWING APPARATUS, DRAWING DATA GENERATION METHOD, DRAWING DATA GENERATION PROGRAM STORAGE MEDIUM, AND ARTICLE MANUFACTURING METHOD - A drawing apparatus of the present invention is an apparatus that performs drawing on a substrate with a plurality of charged particle beams and includes a blanking deflector array including a plurality of blanking deflectors configured to respectively blank the plurality of charged particle beams; and a controller configured to control the blanking deflector array based on drawing data. The controller is configured to control the blanking deflector array such that a position error of the plurality of charged particle beams on the substrate due to a magnetic field generated by the blanking deflector array is less than that in a case where the controller controls the blanking deflector array in accordance with initial drawing data.03-28-2013
20130078576COMPOSITIONS OF NEUTRAL LAYER FOR DIRECTED SELF ASSEMBLY BLOCK COPOLYMERS AND PROCESSES THEREOF - The present invention relates to novel neutral layer compositions and methods for using the compositions. The neutral layer composition comprises at least one random copolymer having at least one unit of structure (1), at least one unit of structure (2) and at least one unit of structure (3)03-28-2013
20130084530METHOD FOR FABRICATING PATTERNED LAYER - A method for fabricating a patterned layer is disclosed. Firstly, a semiconductor substrate is provided. Then, a precursory gas on the semiconductor substrate is formed. Finally, a patterned layer on the semiconductor substrate is deposited by reacting the precursory gas with at least one electron beam or at least one ion beam. The present invention not only fabricates a patterned layer on the substrate in a single step but also achieves a high lithographic resolution and avoids remains of contaminations by using the properties of the electron beam or the ion beam and the precursory gas.04-04-2013
20100075259Illuminating waveguide fabrication method - A nanolithography system comprising a novel optical printing head suitable for high throughput nanolithography. This optical head enables a super-resolution lithographic exposure tool that is otherwise compatible with the optical lithographic process infrastructure. The exposing light is transmitted through specially designed super-resolution apertures, of which the “C-aperture” is one example, that create small but bright images in the near-field transmission pattern. A printing head comprising an array of these apertures is held in close proximity to the wafer to be exposed. In one embodiment, an illumination source is divided into parallel channels that illuminate each of the apertures. Each of these channels can be individually modulated to provide the appropriate exposure for the particular location on the wafer corresponding to the current position of the aperture. A data processing system is provided to re-interpret the layout data into a modulation pattern used to drive the individual channels. In one embodiment of the invention, the exposure head remains stationary while the material to be exposed rotates beneath the head. Such an embodiment comprises a circular data fracturing system to process the layout data to determine the correct modulation pattern.03-25-2010
20120244474METHOD OF FORMING PATTERN - According to one embodiment, a method of forming a pattern includes applying a block copolymer to a substrate, the block copolymer including a first block and a second block, the first block including polyacrylate or polymethacrylate having a side chain to which an alicyclic hydrocarbon group or a hydrocarbon group including a tertiary carbon is introduced, and the second block including polystyrene substituted with hydrocarbon or halogen at an α-position, causing the block copolymer to be phase-separated, irradiating the block copolymer with an energy beam to decompose the second block, and removing the second block with a developer to form a pattern of the first block.09-27-2012
20130040242METHOD AND SYSTEM FOR EXPOSURE OF A PHASE SHIFT MASK - The present disclosure provides a method of making a mask. The method includes providing a substrate having a first attenuating layer on the substrate and a first imaging layer on the first attenuating layer; performing a first exposure to the first imaging layer using a first radiation energy in writing mode; performing a first etching to the first attenuating layer; performing a second etching to the substrate; forming a second imaging layer on the first attenuating layer and the substrate; performing a second exposure to the second imaging layer using a light energy and another mask; and performing a third etching to the first attenuating layer after the second exposure.02-14-2013
20130040241Method and System for Charged Particle Beam Lithography - There is disclosed a lithography method and system implemented by a charged particle beam passed through a shaping slit member having plural circular apertures of different diameters. The method and system operate to delineate a circular pattern by shooting the shaped circular beam passed through the desired circular aperture onto a workpiece. The method and system consists of causing circular beams shaped using different ones of the circular apertures to be shot onto the workpiece such that the circular beams are coincident with each other in center position to thereby delineate a circular pattern of a desired size. Consequently, circular patterns in a wide range of sizes can be obtained, although a limited number of circular apertures are used.02-14-2013
20130040240CHARGED PARTICLE BEAM DRAWING APPARATUS, AND METHOD OF MANUFACTURING ARTICLE - A charged particle beam drawing apparatus includes an electrostatic lens including an electrode member and configured to project the plurality of charged particle beams onto the substrate via the electrode member. In the electrode member are formed a plurality of first openings via which the plurality of charged particle beams pass, and a plurality of second openings different from the plurality of first openings, a total area of the plurality of second openings being not smaller than a total area of the plurality of first openings.02-14-2013
20130157198MULTI CHARGED PARTICLE BEAM WRITING APPARATUS AND MULTI CHARGED PARTICLE BEAM WRITING METHOD - A multi charged particle beam writing apparatus according to an embodiment, includes a setting unit to set a second region such that more openings in remaining openings except for an opening through which the defective beam passes are included in the second region, a selection unit to select a mode from a first mode in which a pattern is written on a target object by using multiple beams having passed openings in the second region and a second mode in which multiple writing is performed while shifting a position by using at least one of remaining multiple beams in the state where the defective beam is controlled to be beam off and additional writing is performed for a position which was supposed to be written by the defective beam, and a writing processing control unit to control to write in the mode selected.06-20-2013
20100040980METHOD AND APPARATUS FOR REFORMING FILM AND CONTROLLING SLIMMING AMOUNT THEREOF - In a film reforming method for reforming a film layer to be reformed by irradiating electron beams thereon, the electron beams are irradiated in a state where the film layer is cooled. Further, in a slimming amount controlling method for controlling a slimming amount of a resist film layer, the slimming amount thereof is controlled by the irradiation amount of electron beams irradiated thereon in a state where the resist film layer having a specified opening dimension is cooled. Furthermore, in a film reforming apparatus including a mounting unit for mounting thereon an object to be processed and an electron beam irradiating unit for irradiating electron beams on the object disposed on the mounting unit to thereby reform a film layer to be reformed, formed on an object, the electron beams are irradiated from the electron beam irradiating unit in a state where the film layer is cooled by a cooling unit provided in the mounting unit.02-18-2010
20100040979SYSTEMS AND METHOD FOR FABRICATING SUBSTRATE SURFACES FOR SERS AND APPARATUSES UTILIZING SAME - The present invention is related in general to chemical and biological detection and identification and more particularly to systems and methods for the rapid detection and identification of low concentrations of chemicals and biomaterials using surface enhanced Raman spectroscopy.02-18-2010
20100092888Process for Structuring Silicon - A process for etching a silicon-containing substrate to form structures is provided. In the process, a metal is deposited and patterned onto a silicon-containing substrate (commonly one with a resistivity above 1-10 ohm-cm) in such a way that the metal is present and touches silicon where etching is desired and is blocked from touching silicon or not present elsewhere. The metallized substrate is submerged into an etchant aqueous solution comprising about 4 to about 49 weight percent HF and an oxidizing agent such as about 0.5 to about 30 weight percent H04-15-2010
20120164583DRAWING APPARATUS AND METHOD OF MANUFACTURING ARTICLE - A drawing apparatus performs drawing on a substrate with a plurality of charged particle beams. The apparatus comprises a stage configured to hold the substrate and to be moved; a projection system configured to project the plurality of charged particle beams onto the substrate; a measurement device configured to detect a charged particle beam that reaches the measurement device due to a charged particle beam incident, via the projection system, on a mark formed on the substrate, to measure a position of the mark; and a controller. The controller is configured to control operations of the projection system and the measurement device so that the position of the mark is measured with at least one of the plurality of charged particle beams, in parallel with drawing on the substrate with a part of the plurality of charged particle beams.06-28-2012
20090123870METHOD OF AND SYSTEM FOR ELECTON BEAM LITHOGRAPHY OF MICRO-PATTERN AND DISC SUBSTRATE HAVING MICRO-PATTERN TO BE TRANSFERRED - An electron beam lithographic method and system for forming a micro-pattern, including servo patterns each of which comprises a plurality of recessed servo elements in a track and groove patterns each of which comprises an inter-track groove extending along the track and to be formed on a discrete track medium, on the a resist coated disc substrate by scanning the resist-coated surface with an electron beam during rotation of the disc substrate. A sequential process of the electron beam lithography comprises the steps of forming the servo elements as an latent image in the resist-coated surface with an electron beam having an irradiation spot diameter smaller than a width of the servo element during rotation of the disc substrate and, subsequently, forming the inter-track grooves in a latent image in the resist-coated surface by intermittently scanning the resist-coated surface in a direction perpendicular to a track direction at regular intervals during rotation of the disc substrate so as thereby to form a continuous row of groove elements into which the inter-track groove is divided.05-14-2009
20130052590DRAWING APPARATUS AND METHOD OF MANUFACTURING ARTICLE - A drawing apparatus performs drawing, with an array of charged particle beams, on shot regions arrayed on a substrate in a direction in parallel and with intervention of step movement of the substrate in the direction. The apparatus includes a driving device for relative movement between a stage and a charged-particle optical system in the direction. The optical system causes sub arrays (of charged particle beams), discretely arrayed in the direction, to be incident on the substrate, and includes deflectors configured to respectively deflect sub array sets each including at least one of the sub arrays. A controller controls the optical system and the driving device such that a region at one side of a boundary among the shot regions and a region at the other side are subjected to drawing not in parallel with a sub array existing over the boundary, but sequentially with intervention of the step movement.02-28-2013
20130071790METHOD OF FORMING AN ETCH MASK - A method of forming an etch mask includes: providing a substrate having thereon a material layer to be etched; forming a hard mask layer consisting of a radiation-sensitive, single-layer resist material on the material layer; exposing the hard mask layer to actinic energy to change solvent solubility of exposed regions of the hard mask layer; and subjecting the hard mask layer to water treatment to remove the exposed regions of the hard mask layer, thereby forming a masking pattern consisting of unexposed regions of the hard mask layer.03-21-2013
20130089820RESIST TOP COAT COMPOSITION AND PATTERNING PROCESS - There is disclosed a resist top coat composition, used in a patterning process onto a photoresist film, wherein a resist top coat is formed by using the resist top coat composition onto a photoresist film formed on a wafer, and then, after exposure, removal of the resist top coat and development of the photoresist film are performed to effect the patterning on the photoresist film, wherein the resist top coat composition contains a truxene compound having phenol groups shown by the following general formula (1). As a result, there is provided a resist top coat composition not only having an effect from an environment to a resist film reduced and effectively shielding an OOB light, but also reducing film loss of a resist pattern and bridging between patterns and having an effect to enhance sensitivity of the resist; and a patterning process using this.04-11-2013
20090042137METHOD FOR TRANSLATING A STRUCTURED BEAM OF ENERGETIC PARTICLES ACROSS A SUBSTRATE IN TEMPLATE MASK LITHOGRAPHY - The present inventors have developed an accurate method for forming a plurality of images on a substrate. The present method provides an improved pattern replication technique that provides submicron resolution, for example 20 nm or less, especially 10 nm or less. The method may involve moving a structured beam of energetic radiation across a target substrate. The motion of an image of the template mask on the substrate is achieved by tilting a mask and substrate assembly relative to the axis of the incident beam. The technique does not require high precision motion of the template mask relative to the target substrate. The energetic radiation may comprise energetic particles. The technique is insensitive to particle energy and can be applied to uncharged, neutral particles.02-12-2009
20090042136Carbon Nanotube-Silicon Composite Structures and Methods for Making Same - The present invention is directed toward methods of attaching or grafting carbon nanotubes (CNTs) to silicon or other surfaces, wherein such attaching or grafting occurs via functional groups on either or both of the CNTs and silicon surface. The present invention is also directed to the novel compositions produced by such methods. Previous work by Applicants has demonstrated covalent attachment of arenes via aryldiazonium salts to Si (hydride passivated single crystal or poly Si; <111> or <100>, p-doped, n-doped or intrinsic), GaAs, and Pd surfaces. In the case of Si, this provides a direct arene-Si bond with no intervening oxide. Applicants have also reported on the use of aryldiazonium salts for the direct covalent linkage of arenes to single wall carbon nanotubes (SWNTs) where the nanotubes can exist either as bundles or individual structures (when surfactant-wrapped). In some embodiments, the present invention is directed to a merger of these two technologies to afford the covalent attachment of individualized (unroped) SWNTs to Si surfaces.02-12-2009
20130071791CHARGED PARTICLE BEAM IRRADIATION APPARATUS, CHARGED PARTICLE BEAM DRAWING APPARATUS, AND METHOD OF MANUFACTURING ARTICLE - An irradiation apparatus includes: a measurement device including a shield in which plural apertures are formed, and plural detectors configured to respectively detect plural charged particle beams respectively having passed through the plural apertures; a scanning mechanism configured to perform scanning of the plural beams and the measurement device relative to each other so that the plural beams respectively traverse edges of the plural apertures; and a controller configured to perform control of the scanning mechanism and the measurement device to obtain a characteristic of each beam. The controller is configured to perform the control such that in a period of the scanning, an energy, shielded by the shield, out of an energy of one beam increases with time, while an energy, shielded by the shield, out of an energy of another beam decreases with time.03-21-2013
20130059252METHOD FOR FORMING RESIST PATTERN AND COMPOSITION FOR FORMING PROTECTIVE FILM - A method for forming a resist pattern includes providing a resist film. A protective film is provided on the resist film using a composition for forming the protective film. The composition includes a polymer and an organic solvent. The resist film on which the protective film is provided is exposed to irradiation with EUV light or an electron beam. The exposed resist film is developed.03-07-2013
20110014572SELF-POWERED LITHOGRAPHY METHOD AND APPARATUS USING RADIOACTIVE THIN FILMS - A self-powered ‘near field’ lithographic system 01-20-2011
20130065184CHARGED PARTICLE BEAM DRAWING METHOD AND CHARGED PARTICLE BEAM DRAWING APPARATUS - A charged particle beam drawing method according to an embodiment is a method including forming a first measurement pattern in a first measurement pattern area; in succession with processing of forming the first measurement pattern, forming a second measurement pattern in a second measurement pattern area located farthest from the first measurement pattern area in the same column as the first measurement pattern area; and in moving a charged particle beam from the second measurement pattern area to a third measurement pattern area located adjacent to the first measurement pattern area in the same column as the first and second measurement patterns to form a third measurement pattern, moving the charged particle beam to the third measurement pattern area while taking tiny shots approximately equivalent to a data resolution at the adjacent measurement pattern areas to be drawn in the same column one after another from the second measurement pattern.03-14-2013
20100124722CONSTANT CURRENT MULTI-BEAM PATTERNING - The invention relates to a method for forming a pattern on a substrate surface of a target by means of a beam of electrically charged particles in a number of exposure steps, where the beam is split into a patterned beam and there is a relative motion between the substrate and the pattern definition means. This results in an effective overall motion of the patterned particle beam over the substrate surface and exposition of image elements on the substrate surface in each exposure step, wherein the image elements on the target are exposed to the beamlets multiply, namely several times during a number of exposure steps according to a specific sequence. The sequence of exposure steps of the image elements is arranged in a non-linear manner according to a specific rule from one exposure step to the subsequent exposure step in order to reduce the current variations in the optical column of the multi-beam exposure apparatus during the exposure of the pattern.05-20-2010
20090233234HOLDING APPARATUS, POSITION DETECTION APPARATUS AND EXPOSURE APPARATUS, MOVING METHOD, POSITION DETECTION METHOD, EXPOSURE METHOD, ADJUSTMENT METHOD OF DETECTION SYSTEM AND DEVICE MANUFACTURING METHOD - By a force generation device which can generate a magnetic attraction and gas static pressure between a detection system provided on a lower surface side of an FIA surface plate and a surface plate, a predetermined clearance is formed between the detection system and the surface plate, and in a state where the clearance is formed (a floating state), the detection system is driven by a drive device in at least an uniaxial direction within a horizontal plane. Therefore, because the detection system is in a non-contact state to the base platform, movement (positioning) of the detection system with high precision becomes possible. Further, by setting an attraction larger than a repulsion generated by the force generation device, the detection system can be fixed (landed) in a state positioned with high precision.09-17-2009
20120115087METHOD FOR IMPROVING ELECTRON-BEAM - A method for improving the efficiency of the electron-beam exposure is provided, comprising: step 1) coating a positive photoresist on a wafer to be processed, and performing a pre-baking; step 2) separating pattern data, optically exposing a group of relatively large patterns, and then performing a post-baking; step 3) developing the positive photoresist; step 4) performing a plasma fluorination; step 5) performing a baking to solidify the photoresist; step 6) coating a negative electron-beam resist and performing a pre-baking; step 7) electron-beam exposing a group of fine patterns; step 8) performing a post-baking; and step 9) developing the negative electron-beam resist, so that the fabrication of the patterns is finished. According to the invention, it is possible to save 30-60% of the exposure time. Thus, the exposure efficiency is significantly improved, and the cost is greatly reduced. Further, the method is totally compatible with the CMOS processes, without the need of any special equipments.05-10-2012
20130164684CHARGED PARTICLE BEAM LITHOGRAPHY APPARATUS AND METHOD, AND ARTICLE MANUFACTURING METHOD - A lithography apparatus performs writing on a substrate with a plurality of charged particle beams and includes a blanking deflector array for blanking the plurality of charged particle beams; an aperture array configured to block a charged particle beam deflected by the blanking deflector array; and a sealing mechanism configured to seal an opening of at least one of the blanking deflector array and the aperture array with a shielding material that shields a charged particle beam.06-27-2013
20120237877ELECTRON BEAM DATA STORAGE SYSTEM AND METHOD FOR HIGH VOLUME MANUFACTURING - The present disclosure provides for many different embodiments of a charged particle beam data storage system and method. In an example, a method includes dividing a design layout into a plurality of units; creating a lookup table that maps each of the plurality of units to its position within the design layout and a data set, wherein the lookup table associates any repeating units in the plurality of units to a same data set; and exposing an energy sensitive layer to a charged particle beam based on the lookup table.09-20-2012
20100266959Pattern forming method - A pattern forming method includes providing a resist, irradiating a first electron beam to a first region of the resist, and irradiating a second electron beam to a second region which is defined along a boundary of the first region of the resist, wherein the first electron beam has a first cross section having a polygonal shape, and the second electron beam has a second cross section having a polygonal shape.10-21-2010
20090068596Negative-tone,Ultraviolet Photoresists for Fabricating High Aspect Ratio Microstructures - UV photoresist materials are disclosed, based on EPON 154 or EPON 165. Preferred embodiments, based on a composite of EPON 154 and EPON 165, spread evenly into a flat, uniform layer, even without spin-coating. The preferred embodiments bond strongly to all substrates, and are resistant to cracking and debonding following exposure and development. The preferred embodiments have high UV transmittance, which promotes uniform photopolymerization throughout a thick layer. Structures may be produced by UV lithography that have a sidewall quality that has previously been attainable only by photolithography with a collimated x-ray source.03-12-2009
20110300485ORGANIC SOLVENT DEVELOPMENT OR MULTIPLE DEVELOPMENT PATTERN-FORMING METHOD USING ELECTRON BEAMS OR EUV RAYS - Provided is a pattern-forming method including, in the following order: (1) a process of forming a film with an actinic ray-sensitive or radiation-sensitive resin composition comprising a resin which contains an acid-decomposable repeating unit and is capable of decreasing the solubility in an organic solvent by the action of an acid; (2) a process of exposing the film with an electron beam or an EUV ray; and (4) a process of developing the film with a developer containing an organic solvent.12-08-2011
20110294071ELECTRON GUN, LITHOGRAPHY APPARATUS, METHOD OF MANUFACTURING ARTICLE, AND ELECTRON BEAM APPARATUS - An electron gun includes a cathode, a bias electrode, and an anode disposed along a common axis in order thereof. In the electron gun, an electron emitting surface of the cathode has such a shape that brightness of a crossover is more uniform than that in a case that both a first region including a point on the axis and a second region located outside the first region have a first radius of curvature.12-01-2011
20090142701DOUBLE PATTERNING STRATEGY FOR CONTACT HOLE AND TRENCH - A method of lithography patterning includes forming a first resist pattern on a substrate, the first resist pattern including at least one opening therein on the substrate; curing the first resist pattern; forming a second resist pattern on the substrate; forming a material layer on the substrate; and removing the first and second resist patterns to expose the substrate.06-04-2009
20120295202DRAWING APPARATUS AND METHOD OF MANUFACTURING ARTICLE - A drawing apparatus includes a first aperture array configured to split a diverging charged particle beam, a converging lens array configured to form a plurality of first crossovers of a plurality of charged particle beams from the first aperture array, a collimator lens having a principal plane where the plurality of first crossovers are to be formed, a correcting system configured to correct angles of a plurality of charged particle beams from the collimator lens and to form a plurality of second crossovers, and an element having a plurality of apertures respectively corresponding to the plurality of second crossovers. The first aperture array and the converging lens array have apertures such that an arrangement of the plurality of first crossovers is different from an arrangement of the plurality of apertures, and that the plurality of second crossovers are aligned with the plurality of apertures on the element.11-22-2012
20120295203DRAWING APPARATUS AND METHOD OF MANUFACTURING ARTICLE - A drawing apparatus includes an aperture array, a lens array configured to form a plurality of crossovers of a plurality of charged particle beams from the aperture array, and a projection system including an element having a single aperture and configured to converge the plurality of charged particle beams corresponding to the plurality of crossovers and to project the plurality of charged particle beams having passed through the single aperture onto the substrate. The lens array includes a correction lens array including a converging lens eccentric relative to corresponding one of a plurality of apertures of the aperture array such that the plurality of charged particle beams converged according to aberration of the projection system are converged to the single aperture. The lens array includes a magnifying lens array configured, so as to form the plurality of crossovers, to magnify a plurality of crossovers formed by the correction lens array.11-22-2012
20100112483SYSTEM AND METHOD FOR SELF-ALIGNED DUAL PATTERNING - A system and a method for self-aligned dual patterning are described. The system includes a platform for supporting a plurality of process chambers. An etch process chamber coupled to the platform. An ultra-violet radiation photo-resist curing process chamber is also coupled to the platform.05-06-2010
20080233518CHEMICALLY AMPLIFIED RESIST COMPOSITION AND MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WITH SUCH CHEMICALLY AMPLIFIED RESIST COMPOSITION - With the damascene process in which an interconnection is formed using a conventional chemically amplified positive photoresist composition, there arises a problem that the photoresist within the via hole (as well as in its vicinity) may remain even after the exposure and the development are carried out. The present invention relates to a chemically amplified resist composition comprising, at least, a photo acid generator, a quencher and a salt having a buffering function for an acid which is generated from the acid generator by irradiation, wherein the salt having the buffering function for the acid generated from the acid generator is a salt derived from a long chain alkylbenzenesulfonic acid or a long chain alkoxybenzenesulfonic acid and an organic amine that is a basic compound.09-25-2008
20120058432METHODS OF FORMING SEMICONDUCTOR DEVICES USING PHOTOLITHOGRAPHIC SHOT GROUPING - A method of forming a semiconductor device can include determining a shot set including a plurality of shots, based on a final pattern used to form a mask. Shots included in the plurality shots can be classified as being in a first pass shot set or in a second pass shot set, where each can include a plurality of non-directly neighboring shots. A first pass exposure can be performed to radiate a reticle to provide the first pass shot set and a second pass exposure can be performed to radiate the reticle to provide the second pass shot set.03-08-2012
20080305434Developing Apparatus and Developing Method - A developing apparatus has a substrate holder to hold a substrate, a heater which is provided in a substrate holder, and heats a substrate on a substrate holder for processing a resist film by PEB, a cooler to cool a substrate on a substrate holder, a developing solution nozzle to supply a developing solution to a substrate on a substrate holder, and a controller to control a heater, a cooler and a developing nozzle.12-11-2008
20090136873SYSTEM, METHOD AND APPARATUS FOR PATTERN CLEAN-UP DURING FABRICATION OF PATTERNED MEDIA USING FORCED ASSEMBLY OF MOLECULES - A pattern clean-up for fabrication of patterned media using a forced assembly of molecules is disclosed. E-beam lithography is initially used to write the initial patterned bit media structures, which have size and positioning errors. Nano-sized protein molecules are then forced to assemble of on top of the bits. The protein molecules have a very uniform size distribution and assemble into a lattice structure above the e-beam patterned areas. The protein molecules reduce the size and position errors in e-beam patterned structures. This process cleans the signal from the e-beam lithography and lowers the noise in the magnetic reading and writing. This process may be used to fabricate patterned bit media directly on hard disk, or to create a nano-imprint master for mass production of patterned bit media disks.05-28-2009
20090162789Method for Transferring a Predetermined Pattern Reducing Proximity Effects - A method for transferring a predetermined pattern onto a flat support performed by direct writing by means of a particle beam comprises at least: deposition of a photoresist layer on a free surface of the support, application of the beam on exposed areas of the photoresist layer, performing correction by modulation of exposure doses received by each exposed area, developing of the photoresist layer so as to form said pattern. Correction further comprises determination of a substitution pattern (06-25-2009
20110207053EXPOSURE METHOD AND METHOD OF MAKING A SEMICONDUCTOR DEVICE - An exposure method includes generating a reticle exposure pattern based on a target pattern, performing a lithography simulation based on the reticle exposure pattern to generate a simulation pattern that simulates a resist pattern formed by reticle exposure, generating differential data between the target pattern and the simulation pattern, generating a first electron-beam exposure pattern based on the differential data, generating a reticle based on the reticle exposure pattern, performing an optical exposure process with respect to a resist by use of the reticle, and performing an electron-beam exposure process with respect to the resist based on the first electron-beam exposure pattern.08-25-2011
20130216953ELECTRON BEAM WRITING APPARATUS AND ELECTRON BEAM WRITING METHOD - An electron beam writing apparatus comprising a stage that a sample is placed on, an electron optical column, an electron gun emitting an electron beam disposed in the optical column, an electrostatic lens provided with electrodes aligned in an axial direction of the electron beam disposed in the optical column, and a voltage supply device for applying positive voltage constantly to the electrostatic lens. A shield plate is disposed between the XY stage and the electron optical column to block reflected electrons or secondary electrons generated by irradiation to the sample with the electron beam. The electrostatic lens is disposed immediately above the shield plate to change a focal position of the electron beam. A voltage supply device applies a positive voltage constantly to the electrostatic lens.08-22-2013
20130216954DRAWING APPARATUS, AND METHOD OF MANUFACTURING ARTICLE - A drawing apparatus, which draws a pattern on a substrate with a plurality of charged particle beams, includes: a charged particle optical system configured to emit the plurality of charged particle beams onto the substrate; and a controller configured to control an operation of the charged particle optical system. The controller is configured to control the operation so as to compensate for a distortion of the pattern that is determined based on first data of an undulation of a surface of the substrate and second data of an inclination of each of the plurality of charged particle beams with respect to an axis of the charged particle optical system.08-22-2013
20090081591METHOD FOR PATTERNING A PHOTOSENSITIVE LAYER - The method of patterning a photosensitive layer includes providing a substrate including a first layer formed thereon, treating the substrate including the first layer with cations, forming a first photosensitive layer over the first layer, patterning the first photosensitive layer to form a first pattern, treating the first pattern with cations, forming a second photosensitive layer over the treated first pattern, patterning the second photosensitive layer to form a second pattern, and processing the first layer using the first and second patterns as a mask.03-26-2009
20110143283METHOD FOR IMPROVING SENSITIVITY OF RESIST - It is an object of the present invention to improve sensitivity of a resist made from hydrosilsesquioxane when a pattern is formed in the resist by irradiation with a charged particle beam. The method for improving sensitivity of a resist of the present invention is a method to improve sensitivity of a resist formed from hydrosilsesquioxane to a charged particle beam when a pattern is formed in the resist by irradiation with a charged particle beam, and is characterized by including prebaking a resist formed from hydrosilsesquioxane and applied onto a substrate at t° C. (20≦t≦300), applying a composition containing a water-soluble conductive polymer compound to a charged particle beam irradiation surface of the prebaked resist, baking the thus applied composition at T° C. (0≦T06-16-2011
20090117491RESOLUTION ENHANCEMENT TECHNIQUES COMBINING INTERFERENCE-ASSISTED LITHOGRAPHY WITH OTHER PHOTOLITHOGRAPHY TECHNIQUES - Methods and systems are disclosed that provide multiple lithography exposures on a wafer, for example, using interference lithography and optical photolithography. Various embodiments may balance the dosage and exposure rates between the multiple lithography exposures to provide the needed exposure on the wafer. Other embodiments provide for assist features and/or may apply resolution enhancement to various exposures. In a specific embodiment, a wafer is first exposed using optical photolithography and then exposed using interference lithography.05-07-2009
20090258316METHOD FOR PATTERNING A COVERING MATERIAL BY USING HIGH-POWER EXCITING BEAM - The present invention relates to a method for patterning a covering material by using a high-power exciting beam. The method includes the steps of (a) providing a base material having a plurality of thin layers, the neighboring thin layers having different colors; and (b) utilizing a high-power exciting beam to form at least one pattern on the base material, in which the pattern has at least one concave portion, so as to expose the thin layers with different colors. As a result, the covering material has a layered visual effect and many colors. Furthermore, the patterning method of the present invention is simple, and can form the pattern on the base material easily Therefore, the manufacturing time of the covering material with the pattern is reduced.10-15-2009
20090258317WRITING APPARATUS AND WRITING METHOD - A writing apparatus includes a writing unit configured to a write a pattern onto a target workpiece, based on a writing data of the pattern to be written on the target workpiece, and a generation unit configured generate, after the pattern has been written, writing data of a figure code indicating a writing information of when the target workpiece is written, based on the writing information, wherein the writing unit further writes the figure code onto the target workpiece, based on the writing data of the figure code.10-15-2009
20100183982METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device according to an embodiment includes: forming a first resist pattern made of a first resist material on a workpiece material; irradiating an energy beam onto the first resist pattern, the energy beam exposing the first resist material to light; performing a treatment for improving resistance the first resist pattern after irradiation of the energy beam; forming a coating film on the workpiece material so as to cover the first resist pattern; and forming a second resist pattern made of a second resist material on the coating film after the treatment.07-22-2010
20100178611Lithography method of electron beam - A charged particle beam writing method on a chemical amplification type resist, comprising: coating said chemical amplification type resist which contains an acid diffusion inhibitor, on a surface of a mask substrate, exposing charged particle beams to said chemical amplification type resist layer on said surface of the mask substrate, baking said chemical amplification type resist layer which said charged particle beams were exposed, and developing said chemical amplification type resist after the baking, wherein an exposure current density of said electron beams exposing ranges of 5007-15-2010
20100136485ACETAL COMPOUNDS AND THEIR PREPARATION, POLYMERS, RESIST COMPOSITIONS AND PATTERNING PROCESS - An acetal compound of formula (1) is provided wherein R06-03-2010
20100136486RESIST PROTECTIVE COATING COMPOSITON AND PATTERNING PROCESS - A protective coating composition comprising a polymer of acyl-protected hexafluoroalcohol structure as a base polymer, optionally in admixture with a second polymer containing sulfonic acid amine salt in recurring units is applied onto a resist film. The protective coating is transparent to radiation of wavelength up to 200 nm.06-03-2010
20090111056RESOLUTION ENHANCEMENT TECHNIQUES COMBINING FOUR BEAM INTERFERENCE-ASSISTED LITHOGRAPHY WITH OTHER PHOTOLITHOGRAPHY TECHNIQUES - Methods and systems are disclosed that provide multiple lithography exposures on a wafer, for example, using interference lithography and optical photolithography. Various embodiments may balance the dosage and exposure rates between the multiple lithography exposures to provide the needed exposure on the wafer. Other embodiments provide for assist features and/or may apply resolution enhancement to various exposures. In a specific embodiment, a wafer is first exposed using optical photolithography and then exposed using interference lithography.04-30-2009
20130137044SCANNING APPARATUS, DRAWING APPARATUS, AND METHOD OF MANUFACTURING ARTICLE - A scanning apparatus which performs scan on an object with a charged particle beam includes: a blanking deflector configured to individually blank a plurality of charged particle beams based on control data; a scanning deflector configured to collectively deflect the plurality of charged particle beams to perform the scan; and a controller. The controller is configured to hold first data used to obtain error in a scanning amount and a scanning direction of the scanning deflector relative to a reference scanning amount and a reference scanning direction with respect to each of the plurality of charged particle beams, and to generate the control data based on the first data so that the scan is performed for a target region on the object.05-30-2013
20110151382METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method and apparatus for manufacturing a semiconductor device is disclosed. In particular, the application discloses a method that performs a lithography process using a material capable of increasing a depth of focus so as to prevent efficiency of the lithography process from being degraded due to high integration of a semiconductor device, and a pressure-type bake oven as an apparatus for forming a high refractive material on a semiconductor substrate, having advantages of reducing manufacturing costs of a semiconductor manufacturing process and increasing efficiency of the lithography process.06-23-2011
20100047717METHOD FOR MANUFACTURING ORIGINAL MASTER - An original master manufacturing method of rotating an original master at a constant linear velocity, moving in a plane the original master in a predetermined radial direction at a constant velocity which is provided with a predetermined amount of movement per round of the original master, deflecting the electron beam in the planar movement direction of the original master by a first deflection amount equal to the predetermined movement amount per round of the original master on the surface of the original master during exposure of the concentric circular data patterns corresponding to first through (n−1)-th rounds of each of the plurality of tracks, upon completion of the exposure of the concentric circular data patterns corresponding to the first through (n-1)-th rounds, deflecting the electron beam in a direction opposite to the planar movement direction of the original master by a second deflection amount equal to the predetermined distance on the surface of the original master, and upon completion of exposure of the concentric circular data pattern corresponding to an n-th round of each of the plurality of tracks, deflecting the electron beam in the direction opposite to the planar movement direction of the original master by a third deflection amount on the surface of the original master such that an irradiation position of the electron beam is located at an exposure start position on the concentric circle of a first round of an adjacent track.02-25-2010
20120148958SULFUR-CONTAINING MACROMOLECULES AND METHODS FOR THEIR PREPARATION - A sulfur-containing macromolecule and a method of preparing the sulfur-containing macromolecule comprising a polymerization step are provided, where the sulfur-containing macromolecule contains internal units of formula (I) and the polymerization step is formula (II) wherein n is greater than 1, said precursor comprises alkyne having one or more acetylene groups and thiol having one or more thiol groups; and R is remainder of said thiol excluding said thiol groups, R′ is remainder of said alkyne excluding said acetylene groups, and R and R′ are selected from organic or organometallic groups.06-14-2012
20090023098METHOD FOR FABRICATING DUAL DAMASCENE PROFILES USING SUB PIXEL-VOTING LITHOGRAPHY AND DEVICES MADE BY SAME - This invention provides processing steps, methods and materials strategies for making patterns of structures for integrated electronic devices and systems. Processing methods of the present invention are capable of making micro-and nano-scale structures, such as Dual Damascene profiles, recessed features and interconnect structures, having non-uniform cross-sectional geometries useful for establishing electrical contact between device components of an electronic device. The present invention provides device fabrication methods and processing strategies using sub pixel-voting lithographic patterning of a single layer of photoresist useful for fabricating and integrating multilevel interconnect structures for high performance electronic or opto-electronic devices, particularly useful for Very Large Scale Integrated (VLSI) and Ultra large Scale Integrated (ULSI) devices. Processing methods of the present invention are complementary to conventional microfabrication and nanofabrication methods for making integrated electronics, and can be effectively integrated into existing photolithographic, etching, and thin film deposition patterning systems, processes and infrastructure.01-22-2009
20120171619METHOD OF STUDYING CHIRALITY CONTROLLED ARTIFICIAL KAGOME SPIN ICE BUILDING BLOCKS - A method is provided for achieving low energy states for the study of chirality kagome spin ice structures, the method having the steps of providing a silicon substrate; spin coating a polymethyl acrylate resist on said silicon substrate; providing an electron beam writer; exposing said coated substrate to an electron beam from said electron beam writer; positioning more than one thin island ferromagnetic island structure along a honeycomb lattice of said kagome spin ice component, wherein said positioning being along a determined magnetization direction of said lattice and wherein said island structures providing a mechanism in which chirality is controlled.07-05-2012
20110053088ELECTRON BEAM LITHOGRAPHY METHOD AND METHOD FOR PRODUCING A MOLD - Fine patterns to be formed on recording media such as DTM or BPM are drawn onto a mold original plate, on which resist is coated, by scanning an electron beam with an electron beam lithography apparatus. At this time, at least two types of patterns from among a group of: first patterns of protrusions and recesses constituted by media servo patterns and group patterns among data tracks; second patterns of protrusions and recesses constituted by annular positioning marks formed along the circumference of the mold as annular patterns and product identifying marks for tracing products; and third patterns of protrusions and recesses constituted by point like orientation marks used during transfer from the mold to the recording media are continuously drawn onto a single mold original plate within a single vacuum chamber by electron beam lithography.03-03-2011
20110053087METHOD FOR PERFORMING ELECTRON BEAM LITHOGRAPHY - The present invention relates to a method for performing high speed electron beam lithography (EBL). An electron beam source (EBS), capable of emitting an electron beam towards the energy sensitive resist, forms a first pattern (P03-03-2011
20110183265POLYMER-BASED LONG LIFE FUSERS AND THEIR METHODS OF MAKING - Exemplary embodiments provide materials and methods for polymer-based fixing members that have a textured surface with reduced surface energy and increased surface hydrophobicity.07-28-2011
20120308933RADIATION SENSITIVE SELF-ASSEMBLED MONOLAYERS AND USES THEREOF - The invention is directed to a radiation sensitive compound comprising a surface binding group proximate to one end of the compound for attachment to a substrate, and a metal binding group proximate to an opposite end of the compound. The metal binding group is not radiation sensitive. The radiation sensitive compound also includes a body portion disposed between the surface binding group and the metal binding group, and a radiation sensitive group positioned in the body portion or adjacent to the metal binding group. The surface binding group is capable of attaching to a substrate selected from a metal, a metal oxide, or a semiconductor material.12-06-2012
20120148959PATTERN FORMING METHOD - A pattern forming method includes providing a first mask with a first aperture, forming a first transfer pattern on a resist by irradiating a first electron beam through the first aperture, the first transfer pattern extending in a first direction and having a boundary along a circumference thereof, and the first electron beam having a cross section of a first square when emerging from the first aperture, and forming a second transfer pattern on the resist by irradiating a second electron beam through the first aperture, the second transfer pattern extending in the first direction and overlapping a portion the boundary of the first transfer pattern, and the second electron beam having a cross section of a second square when emerging from the first aperture.06-14-2012
20130011796DRAWING APPARATUS AND METHOD OF MANUFACTURING ARTICLE - The present invention provides a drawing apparatus including a blanker including a plurality of deflectors configured to respectively deflect the plurality of charged particle beams, and a controller configured to transmit a control signal to the blanker, wherein the blanker includes a storage configured to store pattern data, a generator configured to generate, based on pattern information which is included in the control signal and designates the pattern data, and position information which is included in the control signal and designates a drawing position corresponding to the pattern information, a blanking signal for drawing a pattern corresponding to the pattern data stored in the storage at a position on a substrate corresponding to the position information, and a driving device configured to drive the plurality of deflectors in accordance with the generated blanking signal generated.01-10-2013
20130011797CHARGED PARTICLE BEAM DRAWING APPARATUS AND ARTICLE MANUFACTURING METHOD - The drawing apparatus of the present invention includes an optical system housing configured to emit a charged particle beam toward the substrate; a stage configured to hold the substrate and be moved at least in a direction perpendicular to an axis of the optical system housing; a detection device including a detector and a support for supporting the detector such that the detector faces a side surface of the stage, and configured for measuring a position of the stage; and a magnetic shield member provided to the stage and configured to shield an opening of the optical system housing that faces a top surface of the stage from a magnetic field. Here, the magnetic shield member is provided to the stage at a detection region, in a direction of the axis, other than a region where the detection device is provided.01-10-2013
20110318693ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME - An embodiment of the composition contains a resin (P) containing a repeating unit (A) that is configured to decompose when exposed to actinic rays or radiation to thereby generate an acid. The repeating unit (A) contains a cation structure with a monocyclic or polycyclic heterocycle containing a nitrogen atom.12-29-2011
20120003587METHOD OF FORMING FINE PATTERNS USING A BLOCK COPOLYMER - A method of patterning a substrate includes processing first regions of the substrate to form a first pattern, the first regions defining a second region between adjacent first regions, arranging a block copolymer on the first and second regions, the block copolymer including a first component and a second component, the first component of the block copolymer being aligned on the first regions, and selectively removing one of the first component and the second component of the block copolymer to form a second pattern having a pitch that is less than a pitch of a first region and an adjacent second region.01-05-2012
20120070784SYSTEM, METHOD AND APPARATUS FOR FABRICATING A C-APERTURE OR E-ANTENNA PLASMONIC NEAR FIELD SOURCE FOR THERMAL ASSISTED RECORDING APPLICATIONS - A method of fabricating a c-aperture or E-antenna plasmonic near field source for thermal assisted recording applications in hard disk drives is disclosed. A c-aperture or E-antenna is built for recording head applications. The technique employs e-beam lithography, partial reactive ion etching and metal refill to build the c-apertures. This process strategy has the advantage over other techniques in the self-alignment of the c-aperture notch to the c-aperture internal diameter, the small number of process steps required, and the precise and consistent shape of the c-aperture notch itself.03-22-2012
20100248149ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION - Provided is an actinic ray-sensitive or radiation-sensitive resin composition including (P) a resin which contains (A) a repeating unit having an ionic structure moiety capable of producing an acid anion on the side chain upon irradiation with an actinic ray or radiation, wherein a cation moiety of the ionic structure moiety has an acid-decomposable group or an alkali-decomposable group.09-30-2010
20100209850PATTERN FORMING METHOD - A first resist film is formed on a substrate, and first pattern exposure is performed such that the first resist film is irradiated with exposure light through a first mask. Then, the first resist film is developed, thereby forming a first resist pattern out of the first resist film. Subsequently, a nano-carbon material is attached to the surface of the first resist pattern, and then a second resist film is formed on the substrate including the first resist pattern. Thereafter, second pattern exposure is performed such that the second resist film is irradiated with exposure light through a second mask. Then, the second resist film is developed, thereby forming a second resist pattern out of the second resist film.08-19-2010
20120219914DRAWING APPARATUS, DRAWING METHOD AND METHOD OF MANUFACTURING ARTICLE - A drawing apparatus for drawing on a substrate by a plurality of charged particle beams includes: an aperture array, a blanker array, a scanning mechanism, and a controller. The aperture array specifies the dimension of each of the plurality of charged particle beams on the substrate. The blanker array carries out blanking of the plurality of charged particle beams independently. The scanning mechanism performs a relative scanning between the plurality of charged particle beams and the substrate in each of the first direction and a second direction which cross each other. The controller controls the blanker array at a predetermined pitch on the substrate. The dimension and the pitch are smaller in one of the first direction and the second direction than in the other.08-30-2012
20100047716METHOD FOR FORMING A PATTERN - One aspect of the present invention is directed to a method of forming a pattern. A first layer which comprises a polymerization initiator is selectively formed on a second layer of a substrate. A polymer layer is selectively formed on the first layer by subjecting an organic monomer to living radical polymerization using the polymerization initiator. The second layer is selectively etched using the polymer layer as a mask.02-25-2010
20120178025CHARGED PARTICLE BEAM DRAWING APPARATUS AND ARTICLE MANUFACTURING METHOD - The charged particle beam drawing apparatus of the present invention performs drawing to a substrate with a plurality of charged particle beams. The drawing apparatus includes an electron lens positioned at a location facing opposite to the substrate and including a plurality of holes through which the charged particle beams pass; and a cleaning unit configured to release active species to a decomposition product that has adhered to the electron lens and reduce the decomposition product by the reaction of the active species and the decomposition product to thereby change the decomposition product to a volatile gas. Here, the cleaning unit has a plurality of openings formed such that the active species are released toward the plurality of holes of the electron lens.07-12-2012
20100273107Dual tone development with a photo-activated acid enhancement component in lithographic applications - A method and system for patterning a substrate using a lithographic process, such as a dual tone development process, is described. The method comprises use of at least one photo-activated acid enhancement component to improve process latitude for the dual tone development process.10-28-2010
20120264062ELECTRON BEAM LITHOGRAPHY SYSTEM AND METHOD FOR IMPROVING THROUGHPUT - An electron beam lithography method and apparatus for improving throughput is disclosed. An exemplary lithography method includes receiving a pattern layout having a pattern layout dimension; shrinking the pattern layout dimension; and overexposing a material layer to the shrunk pattern layout dimension, thereby forming the pattern layout having the pattern layout dimension on the material layer.10-18-2012
20080299490WRITING METHOD AND CHARGED PARTICLE BEAM WRITING APPARATUS - A charged particle beam writing apparatus includes a stage on which a first mask substrate and a second mask substrate are arranged side by side, and a writing unit to write a first pattern on the first mask substrate and a second pattern, which complements the first pattern, on the second mask substrate, by using charged particle beams.12-04-2008
20130183623EXPOSURE APPARATUS AND EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD - An exposure apparatus is equipped with a table which holds a wafer and is movable along an XY plane and has a grating provided on its rear surface, an encoder which irradiates a first measurement beam on the grating from below, receives a return light, and measures a first position information of the table when the table moves in a predetermined range, and another encoder which has a head section provided in a frame and irradiates a second measurement beam on a different grating on the table from the head section, receives a return light, and can measure a second position information of the table, concurrently with measurement of the first position information by the encoder when the table moves in predetermined range. A controller drives the table, based on position information having a higher reliability of the first and the second position information.07-18-2013
20110003252FUNCTIONALIZED FULLERENES FOR NANOLITHOGRAPHY APPLICATIONS - A method for electron beam nanolithography without the need for development step involves depositing a film of a resist comprising functionalized fullerenes on a substrate, and writing features by exposure to an electron beam with an accelerating voltage and dose rate sufficient to promote heating or thermal degradation of the functionalized fullerene in the irradiated volume such that a pattern is generated without a subsequent development step or with an aqueous developer. Lithographic features of about 1 nm or greater can be formed.01-06-2011
20110045409METHOD AND SYSTEM FOR MANUFACTURING A SURFACE USING CHARACTER PROJECTION LITHOGRAPHY WITH VARIABLE MAGNIFICATION - A character projection charged particle beam writer system is disclosed comprising a variable magnification reduction lens which will allow different shot magnifications on a shot by shot basis. A method for fracturing or mask data preparation or optical proximity correction is also disclosed comprising assigning a magnification to each calculated charged particle beam writer shot. A method for forming a pattern on a surface is also disclosed comprising using a charged particle beam writer system and varying the magnification from shot to shot. A method for manufacturing an integrated circuit using optical lithography is also disclosed, comprising using a charged particle beam writer system to form a pattern on a reticle, and varying the magnification of the charged particle beam writer system from shot to shot.02-24-2011
20120328988DRAWING APPARATUS, METHOD OF MANUFACTURING ARTICLE, AND PROCESSING APPARATUS - A drawing apparatus which performs drawing on a substrate with a plurality of charged particle beams includes: a blanking deflector located in a vacuum chamber and configured to blank each of the plurality of charged particle beams; a device located in an external chamber in which a gas pressure is higher than a gas pressure in the vacuum chamber, and configured to control the blanking deflector; and a first substrate facing the blanking deflector. The first substrate constitutes a partition which separates the vacuum chamber and the external chamber in a region, of the first substrate, facing the blanking deflector, and includes an electrode which fills a via formed in the region. The device is electrically connected to the blanking deflector via the electrode.12-27-2012
20120288800ELECTRON BEAM DRAWING APPARATUS AND METHOD OF MANUFACTURING DEVICE - An electron beam drawing apparatus performs drawing on a substrate with an electron beam emitted by an electron gun. The apparatus includes a conditioning chamber configured to perform conditioning of a spare electrode that is a spare for an electrode which constitutes the electron gun, and a driving mechanism configured to remove a used electrode from the electron gun, and to install, into the electron gun, the spare electrode having been subjected to the conditioning, wherein the conditioning includes supplying of electric power to the spare electrode.11-15-2012
20120288799CHARGED-PARTICLE BEAM LITHOGRAPHIC APPARATUS AND METHOD OF MANUFACTURING DEVICE - A lithographic apparatus which performs drawing on a substrate with a charged-particle beam, includes an optical system having an aperture plate in which a first number of apertures are formed to pass a first number of charged-particle beams to perform the drawing, a substrate holder, a cleaning unit configured to clean the aperture plate, and a chamber containing the optical system and the substrate holder. The cleaning unit includes a case having an emitting hole plate in which a second number of emitting holes are formed, the second number being smaller than the first number, an active species source configured to generate active species in the case, and a driving mechanism configured to move the case.11-15-2012
20110159436METHOD AND SYSTEM FOR FRACTURING A PATTERN USING CHARGED PARTICLE BEAM LITHOGRAPHY WITH MULTIPLE EXPOSURE PASSES - In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein a plurality of exposure passes are used, and where the sum of the base dosage levels for all of the exposure passes does not equal a normal dosage. Methods for manufacturing a reticle and manufacturing an integrated circuit are also disclosed, wherein a plurality of charged particle beam exposure passes are used, and where the sum of the base dosage levels for all of the exposure passes is different than a normal dosage.06-30-2011
20110159435METHOD AND SYSTEM FOR FRACTURING A PATTERN USING CHARGED PARTICLE BEAM LITHOGRAPHY WITH MULTIPLE EXPOSURE PASSES WHICH EXPOSE DIFFERENT SURFACE AREA - In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, in which the union of shots from one of a plurality of exposure passes is different than the union of shots from a different exposure pass. Methods for manufacturing a reticle and for manufacturing an integrated circuit are also disclosed, in which the union of shots from one of a plurality of charged particle beam exposure passes is different than the union of shots from a different exposure pass.06-30-2011
20110159434METHOD AND SYSTEM FOR FRACTURING A PATTERN USING CHARGED PARTICLE BEAM LITHOGRAPHY WITH MULTIPLE EXPOSURE PASSES HAVING DIFFERENT DOSAGES - In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein base dosages for a plurality of exposure passes are different from each other. Methods for manufacturing a reticle and manufacturing an integrated circuit are also disclosed, wherein a plurality of charged particle beam exposure passes are used, with base dosage levels being different for different exposure passes.06-30-2011
20130171570DRAWING APPARATUS, AND METHOD OF MANUFACTURING ARTICLE - The present invention provides a drawing apparatus including a stage having a reference mark, and configured to hold a substrate and to be moved, a charged particle optical system, a first measuring device having an optical axis spaced apart from an axis of the charged particle optical system by a first distance and configured to measure a position of an alignment mark formed on the substrate, a second measuring device having an optical axis spaced apart from the axis of the charged particle optical system by a second distance and configured to measure a position of the reference mark, and a processor configured to obtain a baseline of the first measuring device based on positions of the reference mark respectively measured by the first measuring device and the second measuring device.07-04-2013
20080241755CONTACT METALLIZATION OF CARBON NANOTUBES - In one embodiment, SWNTs are synthesized from an embedded catalyst in a modified porous anodic alumina (PAA) template. Pd is electrodeposited into the template to form nanowires that grow from an underlying conductive layer beneath the PAA and extend to the initiation sites of the SWNTs within each pore. Individual vertical channels of SWNTs are created, each with a vertical Pd nanowire back contact. Further Pd deposition results in annular Pd nanoparticles that form on portions of SWNTs extending onto the PAA surface. Two-terminal electrical characteristics produce linear I-V relationships, indicating ohmic contact in the devices.10-02-2008
20130209939Integrated Membrane Lamination and UV Exposure System and Method of Using the Same - A combined laminating and exposing apparatus for exposing a photosensitive printing blank to actinic radiation in a printing plate manufacturing system and a method of using the same are disclosed. The photosensitive printing blank comprises a backing layer, at least one photocurable layer disposed on the backing layer, and a laser ablatable mask layer disposed on the at least one photocurable layer, wherein the laser ablatable mask layer is laser ablated to create an in situ negative in the laser ablatable mask layer. The exposing apparatus comprises: (a) a laminating apparatus for laminating an oxygen barrier layer to a top of the laser ablated mask layer; (b) a conveyor; (c) a first exposing device for imagewise exposing the at least one photocurable layer to actinic radiation, and (d) a second exposing device for exposing the at least one photocurable layer to actinic radiation through the backing layer.08-15-2013
20130177855CHARGED-PARTICLE BEAM DRAWING METHOD, COMPUTER-READABLE RECORDING MEDIA, AND CHARGED-PARTICLE BEAM DRAWING APPARATUS - A charged-particle beam drawing method includes: storing a plurality of time interval patterns defining time intervals for performing a diagnosis of a drift amount of charged-particle beam; drawing a predetermined drawing pattern on a sample by irradiating the beam on the sample; receiving first event information including occurrence of event and type of event; acquiring region information specifying a region being drawn by the beam; selecting a specific time interval pattern from the plurality of time interval patterns based on the type of the event of the first event information and the region information; diagnosing the drift amount of the beam based on the specific time interval pattern, until second event information is received, the second event information includes occurrence of event and type of event; and drawing a predetermined drawing pattern on the sample while performing a drift correction of the charged-particle beam, based on the diagnosing.07-11-2013
20130143163RESIST-PROTECTIVE FILM-FORMING COMPOSITION AND PATTERNING PROCESS - A pattern is printed by forming a photoresist layer on a wafer, forming a protective film thereon, exposure, and development. The protective film is formed from a composition comprising a copolymer of hydroxystyrene with acenaphthylene and/or vinylnaphthalene and a mixture of an alcohol solvent and an ether or aromatic solvent.06-06-2013
20130143162RESIST-PROTECTIVE FILM-FORMING COMPOSITION AND PATTERNING PROCESS - A pattern is printed by forming a photoresist layer on a wafer, forming a protective film thereon, exposure, and development. The protective film is formed from a protective film-forming composition comprising a novolak resin of a bisphenol compound and a mixture of an alcohol solvent and an ether or aromatic solvent.06-06-2013
20130143161CHARGED PARTICLE BEAM APPARATUS - An apparatus includes an irradiation device configured to irradiate an object with charged particle beams, a measurement device configured to measure a characteristic of each of charged particle beams, and a controller. The measurement device includes a plate including knife edges, and a sensor configured to detect a charged particle beam incident thereon via the plate. The controller causes one charged particle beam, selected from the charged particle beams, to perform a scan relative to the measurement device so that the one charged particle beam traverses at least two knife edges among the plurality of knife edges, and to generate correction information for correcting a measurement error of the measurement device due to deformation of the plate, based on an output from the sensor upon the scan.06-06-2013
20120251955COMPOSITION FOR FORMATION OF RESIST UNDERLAYER FILM - There is provided a composition for forming a resist underlayer film for electron beam or EUV lithography that is used in a device manufacture process using EUV lithography, reduces the adverse effects caused by an electron beam or EUV, and is effective for the formation of a good resist pattern and a resist pattern formation method using the composition for forming a resist underlayer film for lithography. A composition for forming a resist underlayer film for electron beam or EUV lithography, comprising: a polymer having a repeating unit structure of Formula (1):10-04-2012
20130149647HOLDING APPARATUS, DRAWING APPARATUS, AND METHOD OF MANUFACTURING ARTICLE - A holding apparatus holds a substrate. The apparatus includes a base having burls that support the substrate, a pool whose capacity is variable and from which a liquid is to be supplied into a gap between the base and the substrate supported by the burls, and a regulator configured to regulate the capacity of the pool.06-13-2013
20110250540SEMICONDUCTOR LITHOGRAPHY PROCESS - A semiconductor lithography process. A photoresist film is coated on a substrate. The photoresist film is subjected to a flood exposure to blanket expose the photoresist film across the substrate to a first radiation with a relatively lower dosage. The photoresist film is then subjected to a main exposure using a photomask to expose the photoresist film in a step and scan manner to a second radiation with a relatively higher dosage. After baking, the photoresist film is developed.10-13-2011
20130149646CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD - Provided is a charged particle beam writing apparatus including a stage which a sample can be mounted thereon, an irradiation unit which emits a charged particle beam to be irradiated on the sample, and an aperture plate which includes a first opening portion to shape the charged particle beam. The aperture plate has a stacked structure of a first member and a second member, and a position of an end portion of the first opening portion in the second member is recessed from the position of the end portion of the first opening portion in the first member.06-13-2013
20120282551RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND - A resist composition including a resin component which generates acid upon exposure and exhibits changed solubility in a developing solution under the action of acid, the resin component including a resin component having a structural unit represented by a general formula (a0-0-1) shown below11-08-2012
20120015303DRAWING APPARATUS AND METHOD OF MANUFACTURING ARTICLE - A drawing apparatus for drawing a pattern on a substrate with a plurality of charged-particle beams, includes a blanking aperture array including a plurality of apertures, a blanking unit including a plurality of blankers and configured to respectively deflect the plurality of charged-particle beams by the plurality of blankers to cause the blanking aperture array to block the respectively deflected plurality of charged-particle beams, a generating circuit configured to generate a blanking instruction in a serial format, and a serial transmission cable configured to transmit the blanking instruction generated by the generating circuit to the blanking unit, wherein the blanking unit is configured to convert the blanking instruction in the serial format, that has been received via the serial transmission cable, into a blanking instruction in a parallel format, and to drive the plurality of blankers based on the blanking instruction in the parallel format.01-19-2012
20130203001Multiple-Grid Exposure Method - A method for fabricating a semiconductor device is disclosed. An exemplary method includes receiving an integrated circuit (IC) layout design including a target pattern on a grid. The method further includes receiving a multiple-grid structure. The multiple-grid structure includes a number of exposure grid segments offset one from the other by an offset amount in a first direction. The method further includes performing a multiple-grid exposure to expose the target pattern on a substrate and thereby form a circuit feature pattern on the substrate. Performing the multiple-grid exposure includes scanning the substrate with the multiple-grid structure in a second direction such that a sub-pixel shift of the exposed target pattern occurs in the first direction, and using a delta time (Δt) such that a sub-pixel shift of the exposed target pattern occurs in the second direction.08-08-2013
20120088193Radiation Patternable CVD Film - Methods for forming photoresists sensitive to radiation on a substrate are provided. Described are chemical vapor deposition methods of forming films (e.g., silicon-containing films) as photoresists using a plasma which may be exposed to radiation to form a pattern. The deposition methods utilize precursors with cross-linkable moieties that will cross-link upon exposure to radiation. Radiation may be carried out in the with or without the presence of oxygen. Exposed or unexposed areas may then be developed in an aqueous base developer.04-12-2012

Patent applications in class Electron beam imaging