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CIRCULAR SHEET OR CIRCULAR BLANK

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428 - Stock material or miscellaneous articles

Patent class list (only not empty are listed)

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Class / Patent application numberDescriptionNumber of patent applications / Date published
428640200 Recording medium or carrier 258
428660600 Aperture containing 17
428660400 Seal, gasket, or packing 7
428660700 Edge structure 5
20100221484CERAMIC SEALED TRANSMISSIVE SUBSTRATE ASSEMBLIES - EMR-transmissive window assemblies comprising an EMR-transmissive substrate mounted in a substantially rigid framework structure and sealed to the metallic framework structure by means of a ceramic material having a partially amorphous and partially crystalline structure are disclosed. Methods for fabricating EMR-transmissive assemblies are also disclosed.09-02-2010
20080213530 Printing Blanket For Mounting on a Rotating Supporting Cylinder of a Printing Machine - The invention relates to a printing blanket for mounting on a rotating supporting cylinder of a printing machine. The printing blanket is in the form of a sheet whose ends are configured as leading edges and trailing edges that are adapted for being engaged in an axial fixing gap of the supporting cylinder. The blanket is characterized in that it has a multilayer structure consisting of film and reinforcing fibers. The invention can be used in the area of the printing machines.09-04-2008
20100159182Production Method for a Codoped Bulk SiC Crystal and High-Impedance SiC Substrate - A method is used for producing a bulk SiC crystal having a resistivity of at least 1006-24-2010
20130171403PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL WITH A NON-HOMOGENEOUS LATTICE PLANE COURSE AND A MONOCRYSTALLINE SIC SUBSTRATE WITH A NON-HOMOGENEOUS LATTICE PLANE COURSE - A method is used for producing an SiC volume monocrystal by sublimation growth. During growth, by sublimation of a powdery SiC source material and by transport of the sublimated gaseous components into the crystal growth region, an SiC growth gas phase is produced there. The SiC volume monocrystal grows by deposition from the SiC growth gas phase on the SiC seed crystal. The SiC seed crystal is bent during a heating phase before such that an SiC crystal structure with a non-homogeneous course of lattice planes is adjusted, the lattice planes at each point have an angle of inclination relative to the direction of the center longitudinal axis and peripheral angles of inclination at a radial edge of the SiC seed crystal differ in terms of amount by at least 0.05° and at most by 0.2° from a central angle of inclination at the site of the center longitudinal axis.07-04-2013
20090246444EDGE ETCHED SILICON WAFERS - The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.10-01-2009
428660500 Ornamental, decorative, pattern, or indicia 5
20090117315Disc-molding mold, mirror-surface disc, and method for producing mold for disc molding - An object is to improve the durability of a mold and reduce the cost of the mold. A disc-molding mold includes a first mold; and a second mold disposed in opposition to the first mold such that the second mold can advance and retreat. One of the first and second molds includes a base material having a roughened surface, and a coating layer formed on the surface of the base material through coating treatment. A stamper attachment surface is defined on a surface of the coating layer. Since a coating layer is formed on the roughened surface of the base material through coating treatment, the area of contact between the base material and the coating layer can be increased. Therefore, the adhesion force between the base material and the coating layer increases, so that the coating layer becomes unlikely to peel off, whereby the durability of the mold can be improved, and the cost of the mold can be reduced.05-07-2009
20120301653NAPKIN RING WITH REMOVABLE INSERT - A napkin ring can include a first transparent disc, a second transparent, and a decorative disc positioned between the first and second transparent discs. The first and second transparent discs can be retained adjacent to each other by a retention feature, which can be a first and second plurality of magnets disposed within the respective transparent discs.11-29-2012
20100047510Repositionable targeting reference for video screens - A repositionable targeting reference for video screens comprised of transparent film material upon which a reticle is printed and which adheres to a video screen by virtue of static electrical attraction, a low tack adhesive coating, or other means.02-25-2010
20110045227WATERLESS SYSTEM FOR PROVIDING FAN-SHAPED FOUNTAIN EFFECT - An apparatus for creating a water disk effect without water. The apparatus includes first and second disks, each having a first side with a substantially planar surface and a second side with a surface textured with a three dimensional (3D) pattern or topography including raised, arcuate ridges in a whirlpool or spiral arrangement. The apparatus includes a housing that supports the first and second disks for independent rotation about a common axis. The disks are positioned such that the first sides are proximate but spaced apart to avoid contact, such that the 3D patterns face outward toward viewers of the apparatus. The apparatus includes a drive assembly rotating the first disk in a first direction and concurrently rotating the second disk in a second direction opposite the first direction. A water disk effect is created during counter rotation when light from the Sun or other source strikes the disks.02-24-2011
20110217503CROSS-WOVEN SPUNLACE COMPACTED TOWEL WITH RECOVERABLE TEXTURE - A towel is formed by hydro-entanglement of an isotropic web formed of predominantly rayon. The towel comprises a surface texture formed during hydroentangling. The towel is compacted into a cake or disk shape for distribution. The cake or disk shape can expand when exposed to moisture such that the towel recovers to substantially the original dimensions and texture.09-08-2011
428660100 Gear 5
20100098899PROCESS FOR MANUFACTURING PLASTIC MOLDING AND MOLDING MANUFACTURED ACCORDING TO THAT PROCESS - A process for manufacturing plastic moldings while increasing the coefficient of viscosity of the raw material used to manufacture same and to a molding manufactured according to the process. To increase the loadability and the service life of moldings manufactured by injection molding, which are subject to dynamic loads during their use, the granular material used is tempered before the shaping processing in the injection molding process for a period of 10 hours to 30 hours at a temperature between 90 C and 150 C. Without resorting to higher-priced materials, highly loadable moldings can be manufactured by this process, which can be advantageously used by the manufacturer without a greater effort. A corresponding molding, such as a worm gear, manufactured according to the process from a granular material with an original solution viscosity between 180 mL/g and 190 mL/g, has a solution viscosity between 180 mL/g and 200 mL/g.04-22-2010
20090317582SINTERED GEAR - The invention relates to a sintered gear (12-24-2009
20120003417CAST-IN-PLACE TORSION JOINT - One embodiment of the invention includes a product including an annular portion including a frictional surface and a first flange portion extending from the frictional surface, wherein the first flange portion comprises a first face, a second face, and a third face; and a hub portion and a second flange portion extending from the hub portion, wherein the second flange portion engages the first face, the second face, and the third face of the first flange portion.01-05-2012
20090081402Composite gear - The gear wheel of the present invention comprises a core, and teeth, in which said core comprises a first material, said teeth comprising the first material of the core together with a second material molded thereon as a skin, wherein the thickness of said skin at root of the teeth is more than the thickness of said skin at pitch line of the teeth.03-26-2009
20120040126Blank of a Machine Component Comprising Teeth, and Method of Producing Such a Machine Component - A blank of a machine component comprising teeth, and a method of producing a corresponding machine component. The blank has a surface provided to constitute outside-face end regions of the teeth, and has indentations, which are preferably realized by a forming operation, boundaries of the indentations constituting edge regions of the surface. In the alteration of the blank for the purpose of realizing the machine component, the teeth can be realized in such a way that remaining regions of the indentations constitute chamfers of tooth flanks of the teeth. Burr strands, which would have to be removed in a further operation, can thereby be prevented.02-16-2012
428660200 Frictional 4
20080226861Wet friction lining - The invention relates to a wet friction lining with a textile fabric which is displaced with a resin or resin mixture. The textile fabric is made from staple fibers.09-18-2008
20110045226Coating Arrangement - A coating arrangement has the following characteristics: -particles having a scratch hardness greater than or equal to 9 and a median grain size that can be determined, -a coating having a thickness equaling approximately half the median grain size, -a coating carrier with a surface comprising recesses, wherein a portion greater than 85% of the recesses compared to a surface surrounding the associated recess is designed with a depth smaller than approximately 10% and/or a opening width smaller than or equal to approximately 15% of the coating thickness, and -the coating is applied to the surface of the coating carrier and surrounds the particles at least at a lower region oriented toward the coating carrier.02-24-2011
20130183478DRY FRICTION MATERIAL AND METHOD FOR MANUFACTURING THE SAME - In a dry friction material and a method for manufacturing the same, to maintain a content of glass fibers low on a whole dry friction material to apply a hole boring for caulking assembly with high strength and high stiffness at a part to be subjected to the hole boring.07-18-2013
20110311753BRAKE AND CLUTCH DISCS - Carbon fibre-reinforced ceramic brake and clutch discs are manufactured by siliconising incompletely densified carbon-carbon fibre preforms produced by only a single chemical vapour infiltration step and then subjecting the siliconsised densified preform to a carbon impregnation step, e.g. by chemical vapour or liquid infiltration. The method substantially reduces processing times and costs compared to conventional chemical vapour infiltration processes, whilst yielding highly effective end products with optimised structural and frictional properties, particularly in terms of stability at high temperatures.12-22-2011
Entries
DocumentTitleDate
20100055374Retroflective pavement markers for wet weather - Disclosed is a bi-composition preformed thermoplastic pavement marking material having a first composition of thermoplastic material with specified melting temperature in the range of 90° to 120° C. and a second composition of thermoplastic material having desired profiles with a specified melt temperature of 10° C.-70° C. higher than the first composition wherein preformed thermoplastic pavement marking has embedded reflective elements and where the first composition melts at an observably lower temperature than the second composition preventing overheating of the second composition and providing good bond to pavement.03-04-2010
20130034681Method for Producing a Freeze-Dried Molded Article - The invention relates to freeze-dried molded articles comprising at least one or more active substances and optionally one or more scaffold-forming agents, optionally one or more auxiliary substances, as well as a coating comprising at least one film-forming agent. Furthermore, the invention relates to methods for manufacturing these freeze-dried molded articles, the combination of such freeze-dried molded articles in kit-of-parts arrangements together with aqueous solutions, as well as the use of the freeze-dried molded articles and the kit-of-parts combinations for pharmaceutical and cosmetic application.02-07-2013
20100040821Molding glass lens and mold thereof - A molding glass lens and a mold thereof are disclosed. The molding glass lens consists of an upper optical surface, a lower optical surface, two outers surrounding the optical surfaces and at least three grooves arranged in the form of a circle disposed on the lower outer and/or the upper outer. The disposition of the grooves has no affecting in original size of the outers as well as assembling with other mechanical parts in les group. The mold of the lens includes an upper molding unit and a lower molding unit. Cavity of each molding unit is composed of a central part for forming an optical surface of the lens and an outer circular part for forming outer of the lens. At least three protrudent parts with the same height are disposed in the form of a circle on the outer circular of the lower molding unit and/or the upper molding unit. Thus the air in the mold cavity is easy to exhaust through the gap formed by protrudent parts and glass preform. Therefore, air bubbles generated during the molding processes are prevented and precision of the glass lens is provided.02-18-2010
20100330325Sintered Silicon Wafer - Provided is a sintered silicon wafer in which the maximum crystal grain size is 20μm or less and the average crystal grain size is 1μm or more but not more than 10μm; specifically, provides is a sintered silicon wafer having the following mechanical properties measured by collecting a plurality of test samples from the sintered silicon wafer having a diameter of 400mm or more, namely, the average deflecting strength based on a three-point bending test of 20kgf/mm12-30-2010
20130089694DEVICE FOR MAKING CARBON NANOTUBE FILM - A device for making a carbon nanotube film includes a substrate having a surface, and two substantially parallel slits defined on the surface of the substrate. The two substantially parallel slits extend into the substrate from the surface of the substrate. A growing surface is defined by the two substantially parallel slits and located between the two substantially parallel slits.04-11-2013
20100136279Ceramic substrate - A ceramic substrate according to one aspect of the invention comprises a main surface wherein a diameter of a first imaginary circle inscribed in a circumference of the main surface is represented by C (m), a thickness of the ceramic substrate is represented by h (m), a Poisson ratio of the ceramic substrate is represented by ν, a density of the ceramic substrate is represented by ρ(kg/m06-03-2010
20090304975EPITAXIAL SILICON WAFER AND METHOD FOR PRODUCING THE SAME - An epitaxial silicon wafer in which on growing an epitaxial film only on the front side of a large-sized wafer which is 450 mm or more in diameter, the wafer can be decreased in warpage to obtain a high intrinsic gettering performance and a method for producing the epitaxial silicon wafer. Intrinsic gettering functions have been imparted to a high resistant large-sized silicon wafer which is 450 mm or more in diameter and 0.1 Ω·cm or more in specific resistance by introducing nitrogen, carbon or both of them to a melt on pulling up an ingot. Thereby, after the growth of an epitaxial film, a silicon wafer is less likely to warp greatly. As a result, it is possible to decrease the warpage of an epitaxial silicon wafer and also to obtain a high intrinsic gettering performance.12-10-2009
20130065007METHOD FOR MANUFACTURING FINE CONCAVE-CONVEX PATTERN AND SHEET FOR MANUFACTURING FINE CONCAVE-CONVEX PATTERN - According to a first aspect of the invention, a method for manufacturing a concave-convex pattern includes the steps of heating a sheet-like member, compressively bonding the sheet-like member, removing the sheet-like member after the compressively bonding, and transferring a pattern shape of a reverse concave-convex pattern layer to a surface of the substrate. The sheet-like member has a concave-convex pattern block on at least one of surfaces thereof, and is given flowability thereto by heating. The reverse concave-convex pattern layer is formed on the one of the surfaces, and continues over two or more concaves of the concave-convex pattern block so that the reverse concave-convex pattern layer meshes at least partially with the concave-convex pattern block. At least the reverse concave-convex pattern layer is left on the substrate. Here, the one of the surfaces has the concave-convex pattern block.03-14-2013
20110104426EDGE PROTECTION SEAL FOR BONDED SUBSTRATES - A dielectric material layer is deposited on exposed surfaces of a bonded structure that includes a first substrate and a second substrate. The dielectric material layer is formed on an exposed planar surface of a second substrate and the entirety of peripheral sidewalls of the first and second substrates. The dielectric material layer can be formed by chemical vapor deposition, atomic layer deposition, or plasma induced deposition. Further, the dielectric material layer seals the entire periphery of the interface between the first and second substrates. If a planar portion of the dielectric material layer can be removed by planarization to facilitate thinning of the bonded structure, the remaining portion of the dielectric material layer can form a dielectric ring.05-05-2011
20110300323PRODUCTION METHOD FOR A BULK SIC SINGLE CRYSTAL WITH A LARGE FACET AND MONOCRYSTALLINE SIC SUBSTRATE WITH HOMOGENEOUS RESISTANCE DISTRIBUTION - A method is used to produce a bulk SiC single crystal. A seed crystal is arranged in a crystal growth region of a growing crucible. An SiC growth gas phase is produced in the crystal growth region. The bulk SiC single crystal having a central longitudinal mid-axis grows by deposition from the SiC growth gas phase, the deposition taking place on a growth interface of the growing bulk SiC single crystal. The SiC growth gas phase is at least partially fed from an SiC source material and contains at least one dopant from the group of nitrogen, aluminum, vanadium and boron. At least in a central main growth region of the growth interface arranged about the longitudinal mid-axis, a lateral temperature gradient of at most 2 K/cm measured perpendicular to the longitudinal mid-axis is adjusted and maintained in this range. The bulk SiC single crystal has a large facet region.12-08-2011
20100227106PREDICTABLE BONDED REWORK OF COMPOSITE STRUCTURES USING TAILORED PATCHES - A patch for reworking an inconsistent area in a composite structure includes a composite laminate patch and a layer of adhesive for bonding the laminate patch to the composite structure. The laminate patch has at least first and second regions for releasing strain energy around the inconsistent area respectively at different rates.09-09-2010
20090297755SEMICONDUCTOR WAFER - A semiconductor wafer has a diameter of 450 mm and a thickness of at least 725 μm and no greater than 900 μm.12-03-2009
20110171414Sacrificial Catalyst Polycrystalline Diamond Element - A superhard composite material comprising a polycrystalline diamond cutter (PDC) having a cutting surface and cutting edges having a polycrystalline diamond thickness of about 3 mm is integrally formed with a sacrificial catalyst source that is removed later in the processing of the of the cutter.07-14-2011
20090004426Suppression of Oxygen Precipitation in Heavily Doped Single Crystal Silicon Substrates - This invention generally relates to a process for suppressing oxygen precipitation in epitaxial silicon wafers having a heavily doped silicon substrate and a lightly N-doped silicon epitaxial layer by dissolving existing oxygen clusters and precipitates within the substrate. Furthermore, the formation of oxygen precipitates is prevented upon subsequent oxygen precipitation heat treatment.01-01-2009
20120196075RESIN COMPOSITION, SEMICONDUCTOR WAFER BONDING PRODUCT AND SEMICONDUCTOR DEVICE - A resin composition of the present invention is used for providing a spacer 08-02-2012
20120196074GRAPHENE SHEET AND METHOD FOR PRODUCING THE SAME - To provide a graphene sheet that has a large area, is homogeneous, and has a small amount of domain boundaries, a novel method for producing a graphene sheet suitable for industrial applications, such as application to electronics, that is capable of producing a graphene sheet that has well aligned crystal orientation at a low cost, and a graphene sheet.08-02-2012
20090053453SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF - A structure including a substrate, an intermediate layer provided and formed directly onto the substrate, a transition region, and a group II-VI bulk crystal material provided and formed as an extension of the transition region. The transition region acts to change the structure from the underlying substrate to that of the bulk crystal. In a method of manufacture, a similar technique can be used for growing the transition region and the bulk crystal layer.02-26-2009
20130136884ELASTIC MEMBRANE - There is provided an elastic membrane which can uniformly reduce deformation (elongation) of its contact portion, having a contact surface for contact with a substrate, along the contact surface in substantially the entire area of the contact portion from the center to the periphery. The elastic membrane includes a contact portion having a contact surface for contact with the substrate; a first peripheral wall portion coupled to the peripheral end of the contact portion and extending upwardly; and a second peripheral wall portion located on the inside of the first peripheral wall portion, coupled to the contact portion and extending upwardly, and defining a first chamber on the outer side thereof and a second chamber on the inner side thereof. In the elastic membrane, substantially the entire area of the contact portion is reinforced with a reinforcing member having a higher rigidity than the elastic membrane.05-30-2013
20090311460SEMICONDUCTOR WAFER - A semiconductor wafer with high flatness is provided. The semiconductor wafer has a diameter φ of 450 mm and a thickness of at least 900 μm and no greater than 1,100 μm.12-17-2009
20090022930SINGLE CRYSTAL SILICON HAVING IMPROVED GATE OXIDE INTEGRITY - A process for producing a single crystal silicon wafer comprising a front surface, a back surface, a lateral surface joining the front and back surfaces, a central+ axis perpendicular to the front and back surfaces, and a segment which is axially symmetric about the central axis extending substantially from the front surface to the back surface in which crystal lattice vacancies are the predominant intrinsic point defect, the segment having a radial width of at least about 25% of the radius and containing agglomerated vacancy defects and a residual concentration of crystal lattice vacancies wherein (i) the agglomerated vacancy defects have a radius of less than about 70 nm and (ii) the residual concentration of crystal lattice vacancy intrinsic point defects is less than the threshold concentration at which uncontrolled oxygen precipitation occurs upon subjecting the wafer to an oxygen precipitation heat treatment.01-22-2009
20100285262FLUOROCARBON RESIN COMPOSITE, COOKWARE, COOKER, ROLLER FOR OFFICE AUTOMATION EQUIPMENT, BELT FOR OFFICE AUTOMATION EQUIPMENT, AND METHOD FOR PRODUCING THEM - [Object] There are provided a fluorocarbon resin composite having improved abrasion resistance while nonadhesiveness, which is a feature of a fluorocarbon resin, is maintained, cookware, and a roller and a belt for use in office automation equipment.11-11-2010
20110135865MEMBER FOR FORMING ELEMENT, METHOD OF MANUFACTURING ELEMENT, AND ELEMENT - When a groove is provided for letting gas out of a die for molding a material constituting an optical element, a warped shape is sometimes transferred to the lens or other optical element molded from the material. When a through-hole is provided in a hollow body disposed on the outside of the external peripheral surface of the die, the strength of the body is severely reduced.06-09-2011
20100215890OPTICAL COMPOSITES BETWEEN SIMILAR AND BETWEEN DISSIMILAR MATERIALS - Manufacturing techniques and composite structures that are able to meet increasing demanding requirements for large-scale crystal composites (e.g., greater than 100-200 mm in dimensions) that can be manufactured within reasonable time frames. A method of making an optical composite comprises providing first and second components to be bonded along respective surfaces, treating at least one component over at least a portion of the respective surface, and thereafter, bringing the first and second components into optical contact for bonding along the surface having the treated layer. Treating can include one or more of processing the component to provide a porous interface layer, processing the component to form a pattern of channels on the surface to be bonded, and providing an optical coating on the surface to be bonded.08-26-2010
20120308759LOW-DISLOCATION MONOCRYSTALLINE ALN SUBSTRATE - A bulk AlN single crystal is grown on a monocrystalline AlN seed crystal having a central longitudinal mid-axis and disposed in a crystal growth region of a growing crucible. The bulk AlN single crystal grows parallel to the longitudinal mid-axis by deposition on the AlN seed crystal. The crucible has a lateral crucible inner wall extending in the growth direction. A free space is formed between the AlN crystals and the lateral crucible inner wall. Bulk AlN single crystals and monocrystalline AlN substrates produced therefrom are obtained with only few dislocations, which are substantially distributed homogeneously. Growing crucibles are provided with a crucible lid with a gap formed between an inner growing crucible and the crucible lid through which some of the AlN growth gas phase generated inside the crystal growth region escapes and is deposited on a bottom of an outer growing crucible opposite the lid.12-06-2012
20120308758SILICON CARBIDE CRYSTAL INGOT, SILICON CARBIDE CRYSTAL WAFER, AND METHOD FOR FABRICATING SILICON CARBIDE CRYSTAL INGOT - A silicon carbide crystal ingot having a surface greater than or equal to 4 inches, having an n-type dopant concentration greater than or equal to 1×1012-06-2012
20090220722PROCESSES FOR PRODUCING MONOLITHIC POROUS CARBON DISKS FROM AROMATIC ORGANIC PRECURSORS - Disclosed are processes for producing monolithic and metal doped monolithic porous carbon disks from prepolymer organic precursors in the powder form composed of either or both polyimide and polybenzimidazole. The powders are consolidated (compressed) into disks and then pyrolyzed to form the desired porous carbon disk. Porous carbon-carbon composite disks are also prepared by adding carbon to the prepolymer organic precursors.09-03-2009
20120009374Hybrid Silicon Wafer and Method of Producing the Same - Provided is a hybrid silicon wafer in which molten state polycrystalline silicon and solid state single-crystal silicon are mutually integrated, comprising fine crystals having an average crystal grain size of 8 mm or less at a polycrystalline portion within 10 mm from a boundary with a single-crystal portion. Additionally provided is a method of manufacturing a hybrid silicon wafer, wherein a columnar single-crystal silicon ingot is sent in a mold in advance, molten silicon is cast around and integrated with the single-crystal ingot to prepare an ingot complex of single-crystal silicon and polycrystalline silicon, and a wafer shape is cut out therefrom. The provided hybrid silicon wafer comprises the functions of both a polycrystalline silicon wafer and a single-crystal wafer.01-12-2012
20120009373Hybrid Silicon Wafer and Method of Producing the Same - Provided is a hybrid silicon wafer made of a wafer comprised primarily of two or more types of concentric single-crystal silicon or polycrystalline silicon prepared by mutually integrating one in a molten state and another in a solid state, and having specific resistances that differ by two orders of magnitude or more. Additionally provided is a method of manufacturing a hybrid silicon wafer, wherein high specific resistance silicon or an ingot comprised primarily of silicon is disposed at a central portion or a decentered position in a crucible, a nugget or powdered silicon having a specific resistance that is lower by two orders of magnitude or more than the ingot is filled in a void part around the ingot in the crucible, the nugget or powdered silicon is selectively melted and integrated with the ingot to form a complex, and a wafer shape is cut out therefrom. The provided hybrid silicon wafer comprises the functions of both a polycrystalline silicon wafer and a single-crystal wafer, or two or more polycrystalline silicon wafers having different functions.01-12-2012
20120207961FIRE PROTECTION ELEMENT - A fire protection element is disclosed. The fire protection element has a foamed body formed at least partially of an ash-forming mixture, and in an embodiment, an intumescent mixture. A carrier component is embedded in the foamed body. The carrier component is a thin, flat part which is covered by the body on at least one flat side.08-16-2012
20110165364ANTI-LOADING ABRASIVE ARTICLE - A coated abrasive article includes a backing having a surface, a plurality of abrasive regions overlying the surface in each of the first and second portions, and at least one macro-channel. The surface of the backing has a shape defined by an outer contour. A bisecting axis divides the shape into first and second portions. Each abrasive region includes a binder and a plurality of abrasive grains in contact with the binder. The abrasive grains have an average grain size of not greater than about 200 microns. The at least one macro-channel defines a passageway extending between a pair of adjacent abrasive regions and terminating at openings at the outer contour within each of the first and second portions. The macro-channel has an average channel width of between about 0.1 millimeters to about 5 millimeters and is substantially free of the binder and the abrasive grains.07-07-2011
20120128915GaAs Wafer And Method For Manufacturing The GaAs Wafer - There is provided a method for manufacturing a GaAs wafer comprising: growing a GaAs single crystal by an LEC method; and fabricating a GaAs wafer by slicing the GaAs single crystal obtained by growing the GaAs single crystal, wherein in growing the GaAs single crystal, a crystal-melt interface between the GaAs single crystal and a raw material melt is formed into a convex-shape toward the raw material melt side, and a ratio T05-24-2012
20120315427SINGLE CRYSTAL SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A single crystal silicon carbide substrate has a 4H-polytype crystal structure, has with nitrogen atoms doped as a conduction impurity with an atomic concentration of more than 1×1012-13-2012
20120076968METHOD AND APPARATUS FOR FABRICATING CRACK-FREE GROUP III NITRIDE SEMICONDUCTOR MATERIALS - Method for producing a III-N (AlN, GaN, Al03-29-2012
20120315428Method For Producing Semiconductor Wafers Composed Of Silicon Having A Diameter Of At Least 450 mm, and Semiconductor Wafer Composed Of Silicon Having A Diameter of 450 mm - Silicon semiconductor wafers are produced by: 12-13-2012
20090061140Silicon Single Crystal Producing Method, Annealed Wafer, and Method of Producing Annealed Wafer - A method in which SSDs are reliably reduced while reducing void defects other than the SSDs on a wafer surface, which is essential for an annealed wafer, and ensuring that BMDs serving as gettering source in a bulk are generated, in order to stabilize the quality of the annealed wafer. Considering that annealing a silicon wafer leads to an increase of density (quantity) of deposits associated with oxygen and nitrogen and forming a core of the SSDs, SSDs are decreased by reducing the density (quantity) of the deposits associated with oxygen and nitrogen by controlling three parameters of oxygen concentration, nitrogen concentration and cooling concentration during the process of pulling and growing the silicon single crystal 03-05-2009
20120263908METHOD FOR APPLYING LEATHER TO VEHICLE INTERIOR PARTS - In a method of manufacturing leather for being applied to components, the following procedural steps are performed: providing manufactured leather, and applying an adhesive layer to the rear side of the leather or, respectively, to a composite material face in case of a leather composite material, wherein a bonding adhesive is used for building up the adhesive layer, allowing repositioning of the leather or of the leather composite material essentially an arbitrary number of times.10-18-2012
20110217502ANIONIC MODIFIED POLYURETHANE DISPERSIONS - The present invention relates to an aqueous polyurethane urea dispersion comprising a polyurethane urea polymer comprising structural units of the formula (I)09-08-2011
20120321833PROGRAMMABLE PELLET PRESS - A programmable pellet press for compressing a powdered sample and forming a sample disc, including a hydraulic mechanism for compressing the sample in a mold operatively and electrically connected to a control mechanism for commanding an exertion of low constant preloading pressure followed by pressure increases with constant pressure dwell times upon the hydraulic mechanism. An algorithm for a programmable pellet press on computer readable media including performing a pressurization subroutine, performing a proportional-integral-derivative (PID) feedback loop, performing a depressurization subroutine, and performing an unloading subroutine when pressure is at a baseline level. A method of compressing a powdered sample into a sample disc by loading the powdered sample into a mold of a programmable pellet press, from a baseline pressure, increasing hydraulic pressure and maintaining a preloading pressure against the sample, performing pressure increases upon the sample, depressurizing the sample, and forming a sample disc. A sample disc formed.12-20-2012
20120288661SOLID STRUCTURE GLASS AND METHOD FOR MAKING THE SAME - The present invention discloses a solid structure glass with a thin cross-sectional plane and a method for making the same. The solid structure glass includes an inner surface and an outer surface each combined of a curved surface, or at least two curved surfaces, or a curved surface and at least one flat surface, or at least two flat surfaces. As a result, the solid structure glass can easily be made with different shapes so as to be especially compatible with the form factor of products. Besides, the solid structure glass is made by heating a glass preform and a mold together into a forming temperature of the glass preform under condition that the glass preform is in a softened state.11-15-2012
20130022773SINGLE-CRYSTAL SUBSTRATE,SINGLE-CRYSTAL SUBSTRATE HAVING CRYSTALLINE FILM,CRYSTALLINE FILM,METHOD FOR PRODUCING SINGLE-CRYSTAL SUBSTRATE HAVING CRYSTALLINE FILM,METHOD FOR PRODUCING CRYSTLLINE SUBSTRATE,AND METHOD FOR PRODUCING ELEMENT - Provided are a single-crystal substrate for epitaxial growth on which a crystalline film may be formed with stress thereon being suppressed or eliminated, a single-crystal substrate having a crystalline film, a crystalline film, a method of producing a single-crystal substrate having a crystalline film, a method of producing a crystalline substrate, and an element producing method. The single-crystal substrate has a roughened surface formed on at least a partial region of a surface of the single-crystal substrate. And in order to obtain the single-crystal substrate having a crystalline film, a single-crystalline film is formed by epitaxial growth on a roughened-surface unformed surface on which the roughened surface is not formed, and a crystalline film having low crystallinity than the single-crystalline film is formed by epitaxial growth on a roughened-surface formed surface of the single-crystal substrate.01-24-2013
20130171402PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL WITH A HOMOGENEOUS LATTICE PLANE COURSE AND A MONOCRYSTALLINE SIC SUBSTRATE WITH A HOMOGENEOUS LATTICE PLANE COURSE - A method is used for producing an SiC volume monocrystal by sublimation growth. Before the beginning of growth, an SiC seed crystal is arranged in a crystal growth region of a growth crucible and powdery SiC source material is introduced into an SiC storage region of the growth crucible. During the growth, by sublimation of the powdery SiC source material and by transport of the sublimated gaseous components into the crystal growth region, an SiC growth gas phase is produced there. The SiC volume monocrystal having a central center longitudinal axis grows by deposition from the SiC growth gas phase on the SiC seed crystal. The SiC seed crystal is heated substantially without bending during a heating phase before the beginning of growth, so that an SiC crystal structure with a substantially homogeneous course of lattice planes is provided in the SiC seed crystal.07-04-2013
20090011168CIRCULAR RESIN-MOLDED PRODUCT HAVING CIRCULAR CENTER HOLE AND METHOD AND APPARATUS FOR MOLDING THE SAME - An annular molded product of the present invention is molded by means of injecting a molten resin into a mold through an injection gate and cooling and solidifying the injected molten resin. The annular molded product is formed in the mold around a center pin having a diameter equivalent to the diameter of the circular center hole. The center pin axially extends further away from a position corresponding to the circular resin-molded product, whereby the injection gate is constituted by a tubular channel formed by a cylindrical annular clearance formed within the mold around an extended portion of the center pin. An annular gate trace is formed on the front or back surface of the annular molded product in such a manner as to project in an axial direction of the annular molded product.01-08-2009
20130101778BLOCK BODY FOR PRODUCING DENTURE BASE - To provide a most suitable block body for producing a denture base used when producing a denture base by cutting, the block body for producing a denture base is produced by polymerizing a (meth)acrylate monomer so as to have a color tone within a range that L* is 40 to 55, a* is 14 to 31, and b* is 5 to 20 when the color tone is measured with a sample thickness of 4 mm based on JIS Z8729, and to be preferably in a cylindrical shape having a diameter of 8 to 15 cm and a height of 1.5 to 5 cm, or in an elliptical-cylindrical shape having a major diameter and minor diameter of 8 to 15 cm and a height of 1.5 to 5 cm.04-25-2013
20100316830REINFORCING RING - A reinforcing ring (12-16-2010
20120282426RESISTANCE HEATED SAPPHIRE SINGLE CRYSTAL INGOT GROWER, METHOD OF MANUFACTURING RESISTANCE HEATED SAPPHIRE SNGLE CRYSTAL INGOT, SAPPHIRE SNGLE CRYSTAL INGOT, AND SAPPHIRE WAFER - Provided are a resistance heated sapphire single crystal ingot grower, a method of manufacturing a resistance heated sapphire single crystal ingot, a sapphire single crystal ingot, and a sapphire wafer. The resistance heated sapphire single crystal ingot grower comprises according to an embodiment includes a chamber, a crucible included in the chamber and containing an alumina melt, and a resistance heating heater included inside the chamber and heating the crucible.11-08-2012
20130156989MANUFACTURING A FLEXIBLE STRUCTURE BY TRANSFERS OF LAYERS - A method for manufacturing a flexible structure including implanting ionic species in first and second source substrates so as to form first and second embrittlement regions respectively, delimiting first and second thin films, providing a flexible substrate, the stiffness R of which is less than or equal to 1006-20-2013
20090274860CLAY FILM PRODUCT - The present invention provides a clay film and a member thereof, having low moisture permeability and gas permeability, having mechanical strength enabling use as a self-supporting film, having high flexibility and high heat resistance, being an electrical insulator and having low thermal conductivity; a clay film comprising clay alone, clay and a small amount of a reinforcing material, or clay, a small amount of an additive and a small amount of a reinforcing material and subjected to surface treatment; a clay film comprising clay and a small amount of a reinforcing material, or clay, a small amount of an additive and a small amount of a fibrous reinforcing material, and having gas impermeability; a multilayer film comprising a fabric and clay and having a composite multilayer structure comprising a clay layer and a fabric; and, an adhesive clay film having clay for a main component thereof and a single layer or multilayer structure in which an adhesive layer is preset on the clay film.11-05-2009

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