Class / Patent application number | Description | Number of patent applications / Date published |
428641000 | Ge- or Si-base component | 13 |
20090098407 | LAMINATED STRUCTURE FOR A FLUID - A laminated structure is formed by stacking a first block member, an intermediate member, and a second block member together in this order, and then mutually joining each of the members. Further, by setting the elastic constant of the intermediate member to be greater than the elastic constants of the first block member and the second block member, deformation of grooves, which are formed in the first block member, is minimized. | 04-16-2009 |
20100055493 | Phase Change Memory Materials - Phase change memory materials and more particularly GeAs telluride materials useful for phase change memory applications, for example, optical and electronic data storage are described. | 03-04-2010 |
20120114970 | SUPERALLOY COMPONENT AND SLURRY COMPOSITION - A slurry composition for aluminising a superalloy component is provided, wherein the slurry includes an organic binder and a solid content including aluminium. The slurry further includes hafnium and yttrium. In addition, a superalloy component is provided which includes an aluminide coating. The coating material has at least one layer which includes hafnium and yttrium in addition to aluminium. | 05-10-2012 |
20120148870 | SELF-REMOVAL ANTI-STICTION COATING FOR BONDING PROCESS - A bond free of an anti-stiction layer and bonding method is disclosed. An exemplary method includes forming a first bonding layer; forming an interlayer over the first bonding layer; forming an anti-stiction layer over the interlayer; and forming a liquid from the first bonding layer and interlayer, such that the anti-stiction layer floats over the first bonding layer. A second bonding layer can be bonded to the first bonding layer while the anti-stiction layer floats over the first bonding layer, such that a bond between the first and second bonding layers is free of the anti-stiction layer. | 06-14-2012 |
20120177945 | Whisker-Free Coating Structure and Method for Fabricating the Same - The present invention relates to a whisker-free coating structure and a method for fabricating the same. The whisker-free coating structure comprises a substrate, a tungsten doped copper layer and a lead-free tin layer, wherein the tungsten doped copper layer and the lead-free tin layer are formed on the substrate in turns; So that, the whisker growth in the lead-free tin layers can be effectively suppressed by this whisker-free coating structure. | 07-12-2012 |
20120270065 | MULTI-LAYERED STRUCTURE AND MANUFACTURING METHOD THEREOF - The present invention provides a multi-layered structure, where contamination of impurities into indium target is excellently prevented, and manufacturing method thereof. The multi-layered structure comprises:
| 10-25-2012 |
20130122326 | Electrodeposited Nano-Twins Copper Layer and Method of Fabricating the Same - An electrodeposited nano-twins copper layer, a method of fabricating the same, and a substrate comprising the same are disclosed. According to the present invention, at least 50% in volume of the electrodeposited nano-twins copper layer comprises plural grains adjacent to each other, wherein the said grains are made of stacked twins, the angle of the stacking directions of the nano-twins between one grain and the neighboring grain is between 0 to 20 degrees. The electrodeposited nano-twins copper layer of the present invention is highly reliable with excellent electro-migration resistance, hardness, and Young's modulus. Its manufacturing method is also fully compatible to semiconductor process. | 05-16-2013 |
20130302639 | ZIRCONIUM ALLOY FOR IMPROVING RESISTANCE TO OXIDATION AT VERY HIGH TEMPERATURE AND FABRICATION METHOD THEREOF - A zirconium alloy for use in nuclear fuel assemblies is provided, which provides increased resistance against oxidation and corrosion and also improved bonding with parent material, because pure metallic material such as silicon (Si) or chromium (Cr) is evenly coated on the surface of the parent material by plasma spraying. Because the plasma spray coating used to coat the pure metallic material on the zirconium alloy does not require vacuum equipment and also is not limited due to the shape of the coated product, this is particularly useful when evenly treating the surface of the component such as 4 m-long tube or spacer grip arrangement which is very complicated in shape. Furthermore, because the coated zirconium alloy confers excellent resistance to oxidation and corrosion under emergency such as accident as well as normal service condition, both the economic and safety aspects of nuclear fuel are improved. | 11-14-2013 |
20130309524 | POLYCRYSTALLINE SILICON - Polycrystalline silicon in the form of chunks packed in plastic bags containing a mass of at least 5 kg, including chunks of size from 20 to 200 mm, wherein any fines fraction in the plastic bag is less than 900 ppmw, preferably less than 300 ppmw, more preferably less than 10 ppmw. The polycrystalline silicon, after comminution of a silicon rod obtained by CVD (Siemens process), is sorted and classified, optionally dedusted and then metered and packed. Metering and packing units include elements for removing fines or small particles during metering and during packing. The packing unit includes an energy absorber or a reservoir vessel which enables sliding or slipping of the silicon chunks into the plastic bag. Gas flow generated within the plastic bag after the bag has been filled transports the dust or small particles out of the bag, and these are sucked out with a suction device. | 11-21-2013 |
20140248509 | COATING COMPOSITIONS - Compositions are provided that exhibit an austenitic nickel microstructure. The compositions comprise Ni, Cr, Mo and at least one element selected from the group consisting of Al, Si, and Ti. Feedstock having the composition may be in the form of a cored wire or wires, a solid wire or wires, or a powder. | 09-04-2014 |
20150064496 | SINGLE CRYSTAL COPPER, MANUFACTURING METHOD THEREOF AND SUBSTRATE COMPRISING THE SAME - The present invention relates to a single crystal copper having [100] orientation and a volume of 0.1˜4.0×10 | 03-05-2015 |
20160153119 | Epitaxial Structure and Growth Method of Group-III Nitrides | 06-02-2016 |
20190144976 | COATING COMPOSITIONS | 05-16-2019 |