Class / Patent application number | Description | Number of patent applications / Date published |
428811200 | Multilayer | 54 |
20080213627 | Magnetoresistance effect device and method for manufacturing same, magnetic memory, magnetic head, and magnetic recording apparatus - A magnetoresistance effect device includes: an insulator layer; a first and second ferromagnetic layer laminated to sandwich the insulator layer; a magnetic bias layer laminated with the second ferromagnetic layer; and a connecting section formed discontinuously on a side face of the insulator layer. The connecting section is not interposed between the second ferromagnetic layer and the magnetic bias layer. The connecting section is made of a ferromagnetic material, and electrically connecting between the first ferromagnetic layer and the second ferromagnetic layer. A method for manufacturing a magnetoresistance effect device includes: laminating a first and second ferromagnetic layer to sandwich an insulator layer, and laminating a magnetic bias layer with the second ferromagnetic layer; and forming a connecting section for electrically connecting between the first ferromagnetic layer and the second ferromagnetic layer by discontinuously forming a ferromagnetic material on a side face of the insulator layer. | 09-04-2008 |
20080226948 | MAGNETO-RESISTANCE EFFECT ELEMENT HAVING DIFFUSION BLOCKING LAYER AND THIN-FILM MAGNETIC HEAD - A magnetoresistance effect element (MR element) for use in a thin-film magnetic head has a buffer layer, an antiferromagnetic layer, a pinned layer, a spacer layer, a free layer, and a cap layer that are successively stacked. A sense current flows in a direction perpendicular to layer surfaces via a lower shield layer and an upper shield layer. The pinned layer comprises an outer layer having a fixed magnetization direction, a nonmagnetic intermediate layer, and an inner layer in the form of a ferromagnetic layer. The spacer layer comprises a first nonmagnetic metal layer, a semiconductor layer made of ZnO, and a second nonmagnetic metal layer. The inner layer or the outer layer includes a diffusion blocking layer made of an oxide of an element whose electronegativity is equal to or smaller than Zn, e.g., ZnO, TaO, ZrO, MgO, TiO, or HfO, or made of RuO. | 09-18-2008 |
20080241596 | Magnetoresistive Multilayer Film - This application discloses a magnetoresistive multilayer film having the structure where an antiferromagnetic layer, a pinned-magnetization layer, a non-magnetic spacer layer and a free-magnetization layer are laminated in this order. An opposite-side layer is provided on the side of the antiferromagnetic layer opposite to the pined-magnetization layer. The opposite-side layer has components of nickel and chromium. An atomic numeral ratio of chromium in the opposite-side layer is preferably not less than 41% and not more than 70%, more preferably not less than 43%. | 10-02-2008 |
20080241597 | RADIO-FREQUENCY OSCILLATOR WITH SPIN-POLARISED CURRENT - This radio-frequency oscillator includes a magnetoresistive device in which a spin-polarised electric current flows. This device comprises a stack of at least a first so-called “anchored” magnetic layer having a fixed magnetisation direction, a second magnetic layer, an amagnetic layer inserted between the above-mentioned two layers, intended to ensure magnetic decoupling of said layers. The oscillator also comprises means of causing a flow of electrons in said layers perpendicular to these layers and, if applicable, of applying an external magnetic field to the structure. The second magnetic layer has an excitation damping factor at least 10% greater than the damping measured in a simple layer of the same material having the same geometry for magnetic excitation having wavelengths equal to or less than the extent of the cone or cylinder of current that flows through the stack that constitutes the magnetoresistive device. | 10-02-2008 |
20080254322 | Apparatus With Increased Magnetic Anisotropy And Related Method - An apparatus includes a thermally insulating substrate, an energy absorbing layer on the thermally insulating substrate, and a flash annealed magnetic layer on the energy absorbing layer. The flash annealed magnetic layer may be configured for data storage. A method includes providing a thermally insulating substrate, depositing an energy absorbing layer on the thermally insulating substrate, depositing a magnetic layer on the energy absorbing layer, and flash annealing the magnetic layer. | 10-16-2008 |
20080261079 | THIN FILM DEVICE AND MANUFACTURING METHOD THEREOF - The present invention relates to a thin-film device whose bump has an improved surface property. A thin-film element of the thin-film device includes at least one of an electromagnetic conversion element, a passive element and an active element. A lead conductor film containing Cu as a main component is connected to the thin-film element. The lead conductor is provided with a bump. The bump includes a first conductor film and a second conductor film. The first conductor film is adhered onto the lead conductor film and is a Ta film or made of a material having a comparably fine crystal structure. The second conductor film is a plated film which is directly or indirectly formed on the first conductor film and contains Au as a main component. | 10-23-2008 |
20080268290 | CHEMICALLY DISORDERED MATERIAL USED TO FORM A FREE LAYER OR A PINNED LAYER OF A MAGNETORESISTANCE (MR) READ ELEMENT - Magnetoresistive (MR) read elements and associated methods of fabrication are disclosed. A free layer and/or a pinned layer of an MR read element are formed from a magnetic material such as Co | 10-30-2008 |
20080274379 | THIN FILM DEVICE WITH LEAD CONDUCTOR FILM OF INCREASED SURFACE AREA - The present invention relates to a thin-film device including a thin-film element and a lead conductor film. The thin-film element and the lead conductor film are embedded in an insulating film. The lead conductor film has a terminal area at one end thereof, is connected to the thin-film element at the other end thereof, and between the one end and the other end, has an increased surface area portion whose volume is partially occupied by an insulating material to increase surface area. As a result, there is provided a high frequency thin-film device capable of reducing loss and heat generation due to skin effect, particularly a thin-film magnetic head. | 11-06-2008 |
20090104475 | Magneto-resistance effect element - A method for manufacturing a magneto-resistance effect element includes: forming a first magnetic layer; forming a first metallic layer, on the first magnetic layer, mainly containing an element selected from the group consisting of Cu, Au, Ag; forming a functional layer, on the first metallic layer, mainly containing an element selected from the group consisting of Si, Hf, Ti, Mo, W, Nb, Mg, Cr and Zr; forming a second metallic layer, on the functional layer, mainly containing Al; treating the second metallic layer by means of oxidizing, nitriding or oxynitiriding so as to form a current confined layer including an insulating layer and a current path with a conductor passing a current through the insulating layer; and forming, on the current confined layer, a second magnetic layer. | 04-23-2009 |
20090130491 | Magneto-resistive element for a magneto-resistive device and methof of manufacturing thereof - A magnetoresistive element (MR element) for reading a change in a magnetic field of a magnetic recording medium includes first and second electrode layers for providing a sensing current, which are perpendicular to an air bearing surface (ABS) facing the magnetic recording medium, first and second free layers which have a magnetization direction which changes in accordance with an external magnetic field, and a spacer layer composed of non-magnetic material. A ratio of a representative width and a representative length of each of the first and second free layers is at least 2 to 1, to thereby provide initial magnetizations along a direction of the representative length of each of the first and second free layers. | 05-21-2009 |
20090162698 | Magnetoresistive Effect Element and Manufacturing Method Thereof - A magnetoresistive effect element is produced by forming a first magnetic layer, a spacer layer including an insulating layer and a conductive layer which penetrates through the insulating layer and passes a current, on the first magnetic layer, and a second magnetic layer all of which or part of which is treated with ion, plasma or heat, on the formed spacer layer. | 06-25-2009 |
20090191430 | EXCHANGE COUPLED FILM, MAGNETORESISTIVE ELEMENT, AND THIN-FILM MAGNETIC HEAD - The exchange coupled film according to the present invention comprises a buffer layer including a laminate in which an amorphous layer and a hafnium layer are laminated in that order, an antiferromagnetic layer laminated on the hafnium layer of the buffer layer via an intermediate layer with a thickness of at least 2 nm, and a pinned magnetic layer laminated on the antiferromagnetic layer. | 07-30-2009 |
20090286106 | READ SENSORS AND METHODS OF MAKING SAME WITH BACK-EDGE MILLING AND REFILLING - Methods and apparatus provide a refill configuration adjacent a back-edge that defines a height of a magnetoresistive read sensor. Milling through layers of the sensor forms the back-edge and may be initially conducted at a first angle of incidence greater than a second angle of incidence. In combination, an insulating material and a polish resistant material, such as a non-magnetic metal, disposed on the insulating material fills a void created by the milling. The sensor further includes first and second magnetic shields with the layers of the sensor along with the polish resistant material and insulating material disposed between the first and second magnetic shields. | 11-19-2009 |
20100035086 | IRON NITRIDE MAGNETIC POWDER AND MAGNETIC RECORDING MEDIUM COMPRISING THE SAME - A spherical or ellipsoidal iron nitride magnetic powder having a core comprising iron nitride including a Fe | 02-11-2010 |
20100330394 | CCP-CPP MAGNETORESISTIVE READER WITH HIGH GMR VALUE - A magnetoresistive device having a high giant magnetoresistance (GMR) value and a moderate low resistance area product (RA) includes a first magnetic layer, a second magnetic layer, and a current confined path (CCP) spacer layer positioned between the first magnetic layer and the second magnetic layer. The spacer layer includes copper current confined paths extending between the first magnetic layer and the second magnetic layer in a matrix of magnesium oxide. The spacer layer is formed by a mixture copper and magnesium oxide, which is heattreated to form the copper current confined paths within the magnesium oxide matrix. | 12-30-2010 |
20110027618 | Fabrication of magnetoresistive sensors and electronic lapping guides - The subject matter disclosed herein provides methods for manufacturing an electronic lapping guide and a magnetic read head assembly. The magnetoresistive head assembly includes a sensing element that has a front edge and a front flux guide that has a back edge, such that the sensing element front edge and the front flux guide back edge share a common interface that defines an interface plane normal to the surface of a wafer substrate. The electronic lapping guide comprises a conductive material adapted to attach to two electrical leads for measuring a resistance through the conductive material. The conductive material may include a conductive material back edge aligned with the interface plane. The resistance of the conductive material may be inversely proportional to a conductive material length normal to the interface plane. | 02-03-2011 |
20110117388 | Multiple CCP layers in magnetic read head devices - An improved CPP magnetic read device whose oxide barrier comprises at least two separate CCP layers is disclosed. These two CCP layers differ in the PIT and IAO treatments that they received relative to the PIT/IAO treatment that would be used when only a single CCP layer is formed. | 05-19-2011 |
20110135961 | METHOD AND SYSTEM FOR PROVIDING A MAGNETIC TRANSDUCER HAVING AN IMPROVED READ SENSOR - A method and system for providing a magnetic structure in magnetic transducer is described. The method and system include providing a pinning layer, a synthetic antiferromagnetic (SAF) adjacent to the pinning layer, a nonmagnetic layer, and a sensor layer. The SAF resides between the nonmagnetic and pinning layers. The nonmagnetic layer is between the SAF and the sensor layer. The SAF includes a pinned layer, a reference layer, and a nonmagnetic spacer layer between the pinned and reference layers. The pinned layer is magnetically coupled with the reference layer and includes sublayers. A first sublayer has a first blocking temperature distribution (T | 06-09-2011 |
20110200845 | CURRENT PERPENDICULAR TO THE PLANE READER WITH IMPROVED GIANT MAGNETO-RESISTANCE - In some embodiments, a current perpendicular to the plane giant magneto-resistance (CPP GMR) read sensor may include a reference layer and/or a free layer that includes a plurality of sub-layers. For example, at least one of the reference layer or free layer may include a first ferromagnetic sub-layer, a second ferromagnetic sub-layer, and a Heusler alloy layer located between the first ferromagnetic sub-layer and the second ferromagnetic sub-layer. In some embodiments, a CPP GMR read sensor may include a current closed path (CCP) spacer layer between the reference layer and the free layer. The CCP spacer layer may include Ag and Al | 08-18-2011 |
20110236723 | CURRENT-PERPENDICULAR-TO-PLANE (CPP) READ SENSOR WITH Co-Fe BUFFER LAYERS - A current-perpendicular-to-plane (CPP) read sensor with Co—Fe buffer layers is proposed to improve pinning and magnetoresistance properties. The read sensor comprises first and second Co—Fe buffer layers in the lower and upper portions of a keeper layer structure, respectively, third and fourth Co—Fe buffer layers in the lower and upper portion of a reference layer structure, respectively, and a fifth Co—Fe buffer layer in the lower portion of a sense layer structure. The first buffer layer is adjacent to a pinning layer and has a specific composition to improve unidirectional-anisotropy pinning properties. The second and third buffer layers are adjacent to an antiparallel-coupling layer and have specific compositions to improve bidirectional-anisotropy pinning properties. The fourth and fifth buffer layers are adjacent to a barrier or spacer layer and have specific compositions to improve magnetoresistance properties. | 09-29-2011 |
20120015214 | MAGNETO-RESISTANCE EFFECT ELEMENT - A magneto-resistance effect element, comprising a first magnetic layer, a first metallic layer, which is formed on said first magnetic layer, mainly containing an element selected from the group consisting of Cu, Au, Ag, a current confined layer including an insulating layer and a current path which are made by oxidizing, nitriding or oxynitriding for a second metallic layer, mainly containing Al, formed on said first metallic layer, a functional layer, which is formed on said current confined layer, mainly containing an element selected from the group consisting of Si, Hf, Ti, Mo, W, Nb, Mg, Cr and Zr, a third metallic layer, which is formed on said functional layer, mainly containing an element selected from the group consisting of Cu, Au, Ag; and a second magnetic layer which is formed on said third metallic layer. | 01-19-2012 |
20120058367 | SPIN INJECTION SOURCE AND MANUFACTURING METHOD THEREOF - The spin injection source comprises a nonmagnetic conductor, an MgO film, and a ferromagnet, and injects spin from the ferromagnet to the nonmagnetic conductor. The MgO film is annealed at temperature of between 300° C. and 500° C. The annealing duration is preferably between 30 and 60 minutes. By annealing, the oxygen vacancies increases and the electric resistance of MgO film decreases. And thus the spin injection efficiency in the spin injection source improves. | 03-08-2012 |
20120070693 | MAGNETIC SENSOR STACK BODY, METHOD OF FORMING THE SAME, FILM FORMATION CONTROL PROGRAM, AND RECORDING MEDIUM - The present invention is directed to align crystal c-axes in magnetic layers near two opposed junction wall surfaces of a magnetoresistive element so as to be almost perpendicular to the junction wall surfaces. A magnetic sensor stack body has, on sides of opposed junction wall surfaces of a magnetoresistive element, field regions for applying a bias magnetic field to the element. The field region has first and second magnetic layers having magnetic particles having crystal c-axes, the first magnetic layer is disposed adjacent to the junction wall surface in the field region, the crystal c-axes in the first magnetic layer are aligned and oriented along an ABS in a film plane, the second magnetic layer is disposed adjacent to the first magnetic layer in the field region, and the crystal c-axis directions in the second magnetic layer are distributed at random in a plane. | 03-22-2012 |
20120129007 | Fabrication of a coercivity hard bias using FePt containing film - The free layer of a CPP-TMR sensor is biased by laterally disposed hard bias (HB) layers that include a seedlayer structure, a magnetic layer structure of high coercivity material and a capping layer structure. The magnetic layer structure is a layer of FePt-containing material, such as FePtCu, while the seedlayers and capping layers include layers of Cr, CrTi, Fe, FeCo or FeCoMo. These combinations enable the promotion of the L10 phase of the FePt-containing material which provides a high coercivity magnetic layer structure at much lower annealing temperatures than in the prior art. | 05-24-2012 |
20120129008 | MAGNETO-RESISTANCE EFFECT ELEMENT, MAGNETO-RESISTANCE EFFECT HEAD, MAGNETIC STORAGE AND MAGNETIC MEMORY - A magneto-resistance effect element, a magneto-resistance effect head, a magnetic storage and a magnetic memory, in which noise caused by a spin-transfer torque is reduced, are provided. In a fixed magnetization layer or a free magnetization layer of a magneto-resistance effect element including the fixed magnetization layer, a spacer layer and the free magnetization layer; a layer containing one element selected from the group consisting of Ti, Zr, Nb, Mo, Ru, Rh, Pd, Ag, La, Hf, Ta, W, Re, Os, Ir, Pt and Au is disposed. | 05-24-2012 |
20120156522 | CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE (MR) SENSOR WITH IMPROVED SEED LAYER STRUCTURE FOR HARD BIAS LAYER - A current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor has an improved seed layer structure for the ferromagnetic hard (high coercivity) bias layer that is used to longitudinally bias the sensor's free ferromagnetic layer. The seed layer structure is a trilayer consisting of a first seed layer of tantalum (Ta), a second seed layer of one or both titanium (Ti) and Ti-oxide on and in contact with the Ta layer, and a third seed layer of tungsten (W) on and in contact with the second seed layer. | 06-21-2012 |
20120164484 | MAGNETO-RESISTIVE EFFECT ELEMENT HAVING SPACER LAYER INCLUDING MAIN SPACER LAYER CONTAINING GALLIUM OXIDE AND NONMAGNETIC LAYER - A magnetoresistive effect element (MR element) includes first and second magnetic layers of which relative angles formed by magnetization directions change in relation to an external magnetic field; and a spacer layer positioned between the first magnetic layer and the second magnetic layer. The first magnetic layer is positioned on a side closer than the second magnetic layer in regards to a substrate above which the magnetoresistive effect element is formed, and the spacer layer includes a main spacer layer made of gallium oxide as the primary component, and a first nonmagnetic layer positioned between the main spacer layer and the first magnetic layer and contains copper and gallium. | 06-28-2012 |
20120214020 | MAGNETO-RESISTIVE EFFECT ELEMENT HAVING SPACER LAYER WITH THIN CENTRAL PORTION - A magneto-resistive effect (MR) element includes first and second magnetic layers in which a relative angle formed by magnetization directions changes in response to an external magnetic field, and a spacer layer positioned between the first magnetic layer and the second magnetic layer. The spacer layer, on an air bearing surface, has a larger film thickness at both side edge parts in a track width direction than a film thickness at a central part in a track width direction. When a region of the spacer layer on the air bearing surface is divided into quarters which are both side edge part regions and two central regions such that track width direction lengths are equivalent, an average film thickness of a region where the both side edge regions are combined is preferably larger than a region where the two central regions are combined. | 08-23-2012 |
20120225321 | Electrodeposition of FeCoNiV Films with High Resistivity and High Saturation Magnetization - A magnetic layer that may serve as a top pole layer and bottom pole layer in a magnetic write head is disclosed. The magnetic layer has a composition represented by Fe | 09-06-2012 |
20120237796 | MAGNETO-RESISTIVE EFFECT ELEMENT HAVING SPACER LAYER CONTAINING GALLIUM OXIDE, PARTIALLY OXIDIZED COPPER - A magneto-resistive effect (MR) element includes first and second magnetic layers where a relative angle formed by magnetization directions changes in response to an external magnetic field and a spacer layer positioned between the first magnetic layer and the second magnetic layer. The first magnetic layer is positioned closer to a substrate above which the MR element is formed than the second magnetic layer. The spacer layer includes a main spacer layer that is composed of gallium oxide as a primary component and a bottom layer that is positioned between the main spacer layer and the first magnetic layer and that is composed of partially oxidized copper as a primary component. | 09-20-2012 |
20130059168 | Magnetoresistance Device - A magnetoresistance device is provided. The magnetoresistance device includes a hard magnetic layer, and a soft magnetic layer having a multi-layer stack structure. The multi-layer stack structure has a first layer of a first material and a second layer of a second material. The first material includes cobalt iron boron and the second material includes palladium or platinum. | 03-07-2013 |
20130071691 | Magnetic Sensor With Enhanced Magnetoresistance Ratio - Various embodiments of the present invention are generally directed to a magnetically responsive lamination that may be constructed with a spacer layer disposed between a first and second ferromagnetic free layer. At least one ferromagnetic free layer can have a coupling sub-layer that enhances magnetoresistance ratio (MR) of the magnetically responsive lamination. | 03-21-2013 |
20130108889 | Magnetoresistance Device and Memory Device Including the Magnetoresistance Device | 05-02-2013 |
20130171475 | Magnetic Head Having Stable Shield Domain Structure - A manner for stabilizing the shield domain structure is described that employs the magnetic field of a hard bias layer. More particularly, it has been found that the shield domain structure is stabilized when the height of the hard bias layer in the depth direction is made substantially half the height of upper shield layer. In another embodiment of the invention, a stabilizing structure is provided at approximately the midpoint of the shield in order to fix the closure domain of the shield to the desired two-domain structure. In an embodiment of the invention, the stabilizing structure is made convex or concave as viewed from the air-bearing surface. | 07-04-2013 |
20130236744 | CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WITH MULTILAYER REFERENCE LAYER INCLUDING A HEUSLER ALLOY - A current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) sensor has a multilayer reference layer containing a Heusler alloy. The multilayer reference layer may be a simple pinned layer or the AP2 layer of an antiparallel (AP)-pinned structure. The multilayer reference layer is formed of a crystalline non-Heusler alloy ferromagnetic layer on either an antiferromagnetic layer (in a simple pinned structure) or an antiparallel coupling (APC) layer (in an AP-pinned structure), a Heusler alloy layer adjacent the sensor's nonmagnetic electrically conducting spacer layer, and an intermediate substantially non-crystalline X-containing layer between the crystalline non-Heusler alloy layer and the Heusler alloy layer. The element X is selected from one or more of tantalum (Ta), hafnium (Hf), niobium (Nb) and boron (B). | 09-12-2013 |
20140004383 | CURRENT-PERPENDICULAR-TO-PLANE (CPP) READ SENSOR WITH Co-Fe BUFFER LAYERS | 01-02-2014 |
20140212691 | MAGNETIC ELEMENT ELECTRODE LAMINATION - Various embodiments may be generally directed to a magnetic element capable of optimized magnetoresistive data reading. Such a magnetic element may be configured at least with a magnetoresistive stack that has an electrode lamination having at least a transition metal layer disposed between a magnetically free layer of the magnetoresistive stack and an electrode layer of the electrode lamination. | 07-31-2014 |
20140302345 | MAGNETORESISTIVE SENSOR WITH STOP-LAYERS - Tolerances for manufacturing reader structures for transducer heads continue to grow smaller and storage density in corresponding storage media increases. Reader stop layers may be utilized during manufacturing of reader structures to protect various layers of the reader structure from recession and/or scratches while processing other non-protected layers of the reader structure. For example, the stop layer may have a very low polish rate during mechanical or chemical-mechanical polishing. Surrounding areas may be significantly polished while a structure protected by a stop layer with a very low polish rate is substantially unaffected. The stop layer may then be removed via etching, for example, after the mechanical or chemical-mechanical polishing is completed. | 10-09-2014 |
20140335376 | ELECTRICALLY CONDUCTIVE UNDERLAYER TO GROW FEPT GRANULAR MEDIA WITH (001) TEXTURE ON GLASS SUBSTRATES - A perpendicular magnetic recording medium, comprising: a substrate; a buffer layer deposited in a first orientation on top of the substrate; an underlayer deposited in a second orientation on top of the buffer layer, the underlayer comprising an electrically conductive oxide; and a magnetic recording layer deposited on top of the underlayer and having an axis of magnetic anisotropy substantially perpendicular to the surface thereof. | 11-13-2014 |
20140335377 | CURRENT PERPENDICULAR TO PLANE MAGNETORESISTIVE SENSOR EMPLOYING HALF METAL ALLOYS FOR IMPROVED SENSOR PERFORMANCE - A magnetoresistive sensor having employing a Mn containing Huesler alloy for improved magnetoresistive performance in a structure that minimizes corrosion and Mn migration. The sensor can be constructed with a pinned layer structure that includes a lamination of layers of Co | 11-13-2014 |
20140377588 | ENHANCED PINNING PROPERTY BY INSERTED SI SEED LAYER - The embodiments of the present invention generally relate to a magnetic head having a silicon seed layer disposed between a lower shield and a metallic underlayer to enhance the unidirectional anisotropy in an antiferromagnetic layer disposed over the metallic underlayer. | 12-25-2014 |
20150030886 | MAGNETORESISTIVE ELEMENT, MAGNETIC HEAD, AND MAGNETIC RECORDING AND REPRODUCING APPARATUS - A magnetoresistive element according to an embodiment includes: a nonmagnetic conductive layer; a first magnetic layer connected to the nonmagnetic conductive layer; a second magnetic layer connected to the nonmagnetic conductive layer so as to be distant from the first magnetic layer; a third magnetic layer connected to the nonmagnetic conductive layer so as be distant from the first magnetic layer; and a first to third magnetic electrodes connected to the first to third magnetic layers respectively; a voltage being applied between the third magnetic electrode and the first magnetic electrode through the third magnetic layer, the nonmagnetic conductive layer, and the first magnetic layer, and a current being caused to flow between the third electrode and the second magnetic electrode through the third magnetic layer, the nonmagnetic conductive layer, and the second magnetic layer, the nonmagnetic conductive layer decreasing in volume toward the one end face. | 01-29-2015 |
20160019917 | CURRENT-PERPENDICULAR-TO-PLANE MAGNETO-RESISTANCE EFFECT ELEMENT - The CPPGMR element of the present invention has an orientation layer | 01-21-2016 |
20160035378 | Reader Designs of Shield to Shield Spacing Improvement - A MR sensor is disclosed with an antiferromagnetic (AFM) layer recessed behind a first stack of layers including a free layer and non-magnetic spacer to reduce reader shield spacing and enable increased areal density. The AFM layer may be formed on a first pinned layer in the first stack that is partially embedded in a second pinned layer having a front portion at an air bearing surface (ABS) to improve pinning strength and avoid a morphology effect. In another embodiment, the AFM layer is embedded in a bottom shield and surrounds the sidewalls and back side of an overlying free layer in the sensor stack to reduce reader shield spacing. Pinning strength is improved because of increased contact between the AFM layer and a pinned layer. The free layer is aligned above a bottom shield center section. | 02-04-2016 |
428811300 | Super lattice (e.g., giant magneto resistance (GMR) or colossal magneto resistance (CMR), etc.) | 10 |
20090061258 | CPP-TYPE MAGNETORESISTANCE EFFECT ELEMENT HAVING CHARACTERISTIC FREE LAYERS - A magnetic field detecting element comprises: a stack which includes first, second and third magnetic layers whose magnetization directions change in accordance with an external magnetic field, a first non-magnetic intermediate layer which is sandwiched between the first magnetic layer and the second magnetic layer, the first non-magnetic intermediate layer producing a magnetoresistance effect between the first magnetic layer and the second magnetic layer, and a second non-magnetic intermediate layer which is sandwiched between the second magnetic layer and the third magnetic layer, the second non-magnetic intermediate layer allowing the second magnetic layer and the third magnetic layer to be exchange-coupled such that magnetization directions thereof are anti-parallel to each other under no magnetic field, the stack being adapted such that sense current flows in a direction that is perpendicular to a film surface thereof; and a bias magnetic layer which is provided on a side of the stack, the side being opposite to an air bearing surface of the stack, the bias magnetic layer applying a bias magnetic field to the stack in a direction that is perpendicular to the air bearing surface. | 03-05-2009 |
20090176129 | Galvanomagnetic device and magnetic sensor - Embodiments of the present invention relate to a galvanomagnetic device for use as a magnetic sensor or magnetic memory device. In a particular embodiment, the galvanomagnetic device comprises a non-conductive substrate, a first magnetic layer having a magnetic anisotropy perpendicular to the surface thereof, and a ferromagnetic second magnetic layer formed on the first magnetic layer. On the second magnetic layer, current electrodes are disposed to pass a current between two points, and voltage electrodes are disposed to detect a Hall voltage between two points perpendicularly to the current flow direction. | 07-09-2009 |
20100310903 | Electrodeposition of hard to deposit materials on aluminum and other substrates using improved water saving mercy cell - The present invention provides an alloy film of Mn or its Fe—Mn is depositable on a metalized alumina ceramic (Al | 12-09-2010 |
20120164485 | CURRENT-PERPENDICULAR-TO-PLANE (CPP) READ SENSOR WITH DUAL SEED AND CAP LAYERS - A current-perpendicular-to-plane (CPP) tunneling magnetoresistance (TMR) or giant magnetoresistance (GMR) read sensor with dual seed and cap layers for high-resolution magnetic recording is provided by the invention. The dual seed layers comprise a lower seed layer preferably formed of a nonmagnetic Pt film and an upper seed layer preferably formed of a nonmagnetic Ru film. The lower seed layer separates the upper seed layer from a buffer layer preferably formed of a ferromagnetic Co—Hf film, in order to minimize moment losses at its lower interface and thus define a sharp lower bound of a read gap. In addition, the lower seed layer facilitates the CPP read sensor to exhibit high pinning properties, while the upper seed layer facilitates the CPP read sensor to exhibit robust thermal properties. | 06-28-2012 |
20120295131 | Current Perpendicular to the Plane Reader with Giant Magneto-Resistance - In some embodiments, a current perpendicular to the plane giant magneto-resistance (CPP GMR) read sensor may include a reference layer and/or a free layer that includes a plurality of sub-layers. For example, at least one of the reference layer or free layer may include a first ferromagnetic sub-layer, a second ferromagnetic sub-layer, and a Heusler alloy layer located between the first ferromagnetic sub-layer and the second ferromagnetic sub-layer. In some embodiments, a CPP GMR read sensor may include a current closed path (CCP) spacer layer between the reference layer and the free layer. The CCP spacer layer may include Ag and Al | 11-22-2012 |
20130302649 | CO2FE-BASED HEUSLER ALLOY AND SPINTRONICS DEVICES USING THE SAME - [Problem to be Solved] | 11-14-2013 |
20140120374 | MAGNETIC DEVICES HAVING SHIELDS INCLUDING A NICKEL ALLOY - A device including a magnetoresistive sensor; a top shield; and a bottom shield, wherein the magnetoresistive sensor is positioned between the top shield and the bottom shield, and wherein at least one of the bottom shield and the top shield include NiFeX, wherein X is chosen from Nb, Mo, Ta, or W. | 05-01-2014 |
20150010780 | CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WITH MULTILAYER REFERENCE LAYER INCLUDING A CRYSTALLINE CoFeX LAYER AND A HEUSLER ALLOY LAYER - A current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) has a multilayer reference layer containing a Heusler alloy. The multilayer reference layer includes a crystalline non-Heusler alloy ferromagnetic layer on an antiferromagnetic layer, a Heusler alloy layer, and an intermediate crystalline non-Heusler alloy of the form CoFeX, where X is one or more of Ge, Al, Si and Ga, located between the non-Heusler alloy layer and the Heusler alloy layer. The CoFeX alloy layer has a composition (Co | 01-08-2015 |
20150064499 | METHOD OF PRODUCING A MULTI-LAYER MAGNETOELECTRONIC DEVICE AND MAGNETOELECTRONIC DEVICE - A method of producing a multilayer magnetoelectronic device and a related device. The method includes depositing a multilayer structure including at least two ferromagnetic layers disposed one on top of the other and each having a magnetic anisotropy with a corresponding magnetic moment. A magnetization curve is specified for the magnetoelectronic device. The number of ferromagnetic layers and, for each of the ferromagnetic layers, the magnetic moment and the magnetic hardness for obtaining the specified magnetization curve are determined. For each of the ferromagnetic layers a magnetic material, a thickness, an azimuthal angle and an angle of incidence are determined for obtaining the determined magnetic moment and magnetic hardness of the respective ferromagnetic layer. The multilayer structure is deposited using the determined material, thickness, azimuthal angle and angle of incidence for each of the ferromagnetic layers. | 03-05-2015 |
20150295168 | Magnetic Read Head with MR Enhancements - A TMR stack or a GMR stack, ultimately formed into a sensor or MRAM element, include insertion layers of Fe or iron rich layers of FeX in its ferromagnetic free layer and/or the AP1 layer of its SyAP pinned layer. X is a non-magnetic, metallic element (or elements) chosen from Ta, Hf, V, Co, Mo, Zr, Nb or Ti whose total atom percent is less than 50%. The insertion layers are between 1 and 10 angstroms in thickness, with between 2 and 5 angstroms being preferred and, in the TMR stack, they are inserted adjacent to the interfaces between a tunneling barrier layer and the ferromagnetic free layer or the tunneling barrier layer and the AP1 layer of the SyAP pinned layer in the TMR stack. The insertion layers constrain interdiffusion of B and Ni from CoFeB and NiFe layers and block NiFe crystalline growth. | 10-15-2015 |