| Entries |
| Document | Title | Date |
|---|
| 20090196993 | Carbon Nanohorn Carried Material And Process For Producing Carbon Nanotube - A carbon nanohorn carried material for producing a carbon nanotube by a chemical vapor deposition (CVD) method, including a catalytic metal or a compound thereof contained inside carbon nanohorns or supported on exterior walls of the carbon nanohorns is provided. A carbon nanotube is produced by a CVD reaction using the carbon nanohorn carried material. A novel technical means for producing a carbon nanotube which does not use any noncarbon type carrier, can easily collect and purify the carbon nanotube and can control the length of the carbon nanotube can be provided. | 08-06-2009 |
| 20100151131 | FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER-READABLE STORAGE MEDIUM - In a film deposition apparatus, a turntable is disposed in a vacuum container and includes a substrate placement area in which a substrate is placed. A substrate heating unit is disposed to heat the substrate placed on the turntable. First and second reactive gas supplying units are disposed at mutually distant locations in a rotational direction of the turntable to respectively supply first and second reactive gases to first and second processing areas adjacent to the substrate placement area. A separation gas supplying unit is disposed to supply a separation gas to a separation area located between the first and second processing areas in the rotational direction. An exhaust port is arranged to exhaust the first and second reactive gases and the separation gas from the turntable. A temperature control part is arranged to heat or cool the vacuum container. | 06-17-2010 |
| 20100151130 | COMBUSTION CHEMICAL VAPOR DEPOSITION ON TEMPERATURE-SENSITIVE SUBSTRATES - Method and apparatus for depositing film on flexible (plastic/metal) foil and/or temperature sensitive substrates ( | 06-17-2010 |
| 20090191338 | Film-Deposition Apparatus and Film-Deposition Method - A film-deposition apparatus and a film-deposition method for forming a manganese film on a surface of an object to be processed by a CVD method are provided. The film-deposition apparatus for forming a manganese film on a surface of an object to be processed by a CVD method (Chemical Vapor Deposition method), the film-deposition apparatus comprises: a process vessel capable of being evacuated; a table on which the object to be processed can be placed, the table being disposed in the process vessel; and a source-gas supply part connected to the process vessel, the source-gas supply part being configured to supply, into the process vessel, a source gas including an organic metal material containing manganese or a metal complex material containing manganese. The film-deposition method for forming a manganese film on a surface of an object to be processed by a CVD method (Chemical Vapor Deposition method), the film-deposition method comprises the steps of: placing an object to be processed in an inside of a process vessel capable of being evacuated; and forming a manganese film on a surface of the object to be processed in the process vessel by the CVD method with the use of a source gas including an organic metal material containing manganese or a metal complex material containing manganese. | 07-30-2009 |
| 20080317955 | LOW RESISTIVITY METAL CARBONITRIDE THIN FILM DEPOSITION BY ATOMIC LAYER DEPOSITION - Thermal atomic layer deposition processes are provided for growing low resistivity metal carbonitride thin films. In preferred embodiments TaCN thin films with a resistivity of less than about 1000 μΩ·cm are grown from tantalum halide precursors and precursors that contribute both carbon and nitrogen to the growing film. Such precursors include, for example, hexamethyldisilazane (HMDS), tetramethyldisilazane (TMDS), bisdiethylaminosilane (BDEAS) and hexakis(ethylamino)disilane (HEADS). | 12-25-2008 |
| 20090011128 | Method for manufacturing carbon nano tube - A method for manufacturing a carbon nano tube by a CVD method includes: supplying a carbon atom to a catalyzer for forming the carbon nano tube; and controlling an amount of carbon supply with time. In this method, super saturation of the carbon atom in the catalyzer is controlled appropriately. Thus, a caulking layer is prevented from being formed on the catalyzer, and therefore, the carbon nano tube having a sufficient length is obtained. | 01-08-2009 |
| 20100112217 | METHOD AND DEVICE FOR THE PRODUCTION OF MOULDED PIECES FROM A LAYER OF POLYURETHANE - The invention relates to a process and a device for the production of mouldings containing a layer of polyurethane in shot operation, in which a gas stream is introduced into the flow channel of the spray device in at least two positions. | 05-06-2010 |
| 20100075037 | Deposition Systems, ALD Systems, CVD Systems, Deposition Methods, ALD Methods and CVD Methods - Some embodiments include deposition systems configured for reclaiming unreacted precursor with one or more traps provided downstream of a reaction chamber. Some of the deposition systems may utilize two or more traps that are connected in parallel relative to one another and configured so that the traps may be alternately utilized for trapping precursor and releasing trapped precursor back into the reaction chamber. Some of the deposition systems may be configured for ALD, and some may be configured for CVD. | 03-25-2010 |
| 20090169744 | APPARATUS OF CHEMICAL VAPOR DEPOSITION WITH A SHOWERHEAD REGULATING INJECTION VELOCITY OF REACTIVE GASES POSTIVELY AND METHOD THEREOF - The present invention is related to an apparatus and a method for chemical vapor deposition (CVD) using a showerhead through which a reactive gas of at least one kind and a purge gas is injected over a substrate on which a film is growing. A plural number of reactive gas showerhead modules are laid on a purge gas showerhead module. Each reactive gas is injected from a bottom of the showerhead after flowing through the showerhead as separated, thereby preventing the reactive gases from causing homogeneous gas phase reactions and from generating unwanted particles at the inside of the showerhead. And purge gas is injected from the bottom surface of the showerhead by forming a protective curtain, thereby suppressing diffusion of the reactive gas injected backwardly. Each reactive gas is mixed with an injection support gas which is a kind of inert gas in a mixing zone at inside of the showerhead, where the injection velocity of each reactive gas is regulated positively by the amount of the injection support gas mixed. The present invention further includes an apparatus and a method, wherein the showerhead is cooled by a cooling jacket which keeps the temperature of the showerhead at proper levels to prevent both the condensation and the thermal decomposition of the reactive gas used. | 07-02-2009 |
| 20090098290 | Process for formation of copper-containing films - Object: The present invention provides a method for forming a copper-containing film having a low resistance at a low temperature, according to the CVD technique.
| 04-16-2009 |
| 20130040056 | HETEROLEPTIC IRIDIUM PRECURSORS TO BE USED FOR THE DEPOSITION OF IRIDIUM-CONTAINING FILMS - The present invention provides a process for the deposition of a iridium containing film on a substrate, the process comprising the steps of providing at least one substrate in a reactor; introducing into the reactor at least one iridium containing precursor having the formula: | 02-14-2013 |
| 20130045331 | LATERAL FLOW ATOMIC LAYER DEPOSITION APPARATUS AND ATOMIC LAYER DEPOSITION METHOD USING THE SAME - A lateral flow atomic layer deposition (ALD) apparatus has two gas inflow channels and two gas outflow channels that are connected to two gas outlets that are symmetrically formed based on a substrate in which a thin film is deposited, thereby differently guiding a flow direction of a gas flowing on the substrate. Therefore, uniformity of a deposited film is improved, compared with the conventional lateral flow ALD apparatus in which a supplied source gas and reaction gas constantly flow in only one direction on the substrate. | 02-21-2013 |
| 20100068383 | FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER READABLE STORAGE MEDIUM - A deposition apparatus includes plural first plate members arranged within a hermetically-sealable cylindrical chamber, wherein the plural first plate members each having an opening are arranged in a first direction along a center axis of the chamber with a first clearance therebetween; and plural second plate members arranged in the first direction with the first clearance therebetween, the plural second plate members being reciprocally movable through the openings of the plural first plate members. A first pair of first plate members among the plural first plate members provides a first passage for a first gas flowing in a second direction toward an inner circumferential surface of the chamber. A second pair of first plate members among the plural first plate members provides a second passage for a second gas flowing in the second direction. A pair of second plate members among the plural second plate members supports a wafer. | 03-18-2010 |
| 20130089667 | EVAPORATION APPARATUS AND METHOD OF FORMING ORGANIC FILM - An evaporation apparatus proposed includes a gas storage chamber, a first evaporator, a pressure gauge, a pyrolysis chamber and a deposition chamber. The first evaporator is connected with the gas storage chamber through a first pipe and the first pipe has a first valve. The pressure gauge is connected with the gas storage chamber through a second pipe. The pyrolysis chamber is connected with the gas storage chamber through a third pipe and the third pipe has a second valve. The deposition chamber is connected with the pyrolysis chamber through a fourth pipe. | 04-11-2013 |
| 20090324829 | METHOD AND APPARATUS FOR PROVIDING UNIFORM GAS DELIVERY TO A REACTOR - A gas distribution system for a reactor having at least two distinct gas source orifice arrays displaced from one another along an axis defined by a gas flow direction from the gas source orifice arrays towards a work-piece deposition surface such that at least a lower one of the gas source orifice arrays is located between a higher one of the gas source orifice arrays and the work-piece deposition surface. Orifices in the higher one of the gas source orifice arrays may spaced an average of 0.2-0.8 times a distance between the higher one of the gas source orifice arrays and the work-piece deposition surface, while orifices in the lower one of the gas source orifice arrays may be spaced an average of 0.1-0.4 times a distance between the higher one of the gas source orifice arrays and the work-piece deposition surface. | 12-31-2009 |
| 20130071567 | Thin film processing equipment and the processing method thereof - This invention discloses a thin film process equipment for depositing a film on a substrate and a process of forming the film using the same. The thin film process apparatus comprises a reaction chamber, a gas supplying mechanism, and a transferring mechanism. The film processing equipment is characterized in that the gas supplying mechanism is formed by a plurality of gas supplying ports in form of the concentric-circle structure for spraying down different kinds of gas, so that the mixing of different kinds of gas become uniform, thus facilitate the gas reaction and the formation of films. | 03-21-2013 |
| 20090092754 | FILM FORMATION METHOD, MASK FOR FILM FORMATION AND FILM FORMATION DEVICE - A film formation method is provided for masking a part of a surface of an object and subsequently forming a film, by a chemical vapor deposition method, on a surface on which a film should be formed that is an exposed part of the surface of the object. The film formation method includes, upon film formation in a reaction chamber, masking the object by using a mask having a gas path formed therewithin and vents connecting the gas path with an outer surface of the mask, and controlling concentration distribution of raw material substances in the reaction chamber so that a film formation rate in the surface on which a film should be formed is constant by discharging or attenuating raw material gases, using the gas path within the mask, supplied to a surface which is covered with the mask and on which no film is formed. | 04-09-2009 |
| 20130059079 | NICKEL FILM FORMING METHOD - In a nickel film forming method, an initial Ni film is formed on a substrate by a chemical vapor deposition (CVD) process by using a nickel-containing compound having a molecular structure in which a ligand containing a nitrogen-carbon bond is included and nitrogen of the ligand coordinates with nickel as a film forming source material and at least one selected from ammonia, hydrazine, and derivatives thereof as a reduction gas. Further, a main Ni film is formed on the initial Ni film by CVD by using the nickel-containing compound as the film forming source material and hydrogen gas as the reduction gas. | 03-07-2013 |
| 20090280248 | POROUS SUBSTRATE HOLDER WITH THINNED PORTIONS - A substrate support system comprises a substrate holder for supporting a substrate. The substrate holder comprises a central portion sized and shaped to extend beneath most or all of a substrate supported on the substrate holder. The central portion has one or more recesses defining thinned portions of the central portion. The one or more thinned portions may comprise at least about 10% of an upper or lower surface of the central portion. The central portion is formed of a porous material, such as a material having a porosity between about 10-40%, configured to allow gas flow therethrough. | 11-12-2009 |
| 20090269494 | FILM-FORMING APPARATUS, FILM-FORMING METHOD AND RECORDING MEDIUM - A film forming apparatus comprises a processing chamber for holding therein a to-be-processed substrate, a first gas supplying means for supplying into the processing chamber a first vapor source including a metal alkoxide having a tertiary butoxyl group as a ligand, and a second gas supplying means for supplying into the processing chamber a second vapor source including a silicon alkoxide source, wherein the first gas supplying means and the second gas supplying means are connected to a pre-reaction means for causing pre-reactions of the first vapor source and the second vapor source, and the film forming apparatus is configured to supply the first vapor source and the second vapor source after the pre-reactions into the processing chamber. | 10-29-2009 |
| 20090258144 | Heteroleptic Iridium Precursors To Be Used For The Deposition Of Iridium-Containing Films - The present invention provides a process for the deposition of a iridium containing film on a substrate, the process comprising the steps of providing at least one substrate in a reactor; introducing into the reactor at least one iridium containing precursor having the formula: | 10-15-2009 |
| 20090238972 | METHODS AND APPARATUS FOR USING REDUCED PURITY SILANE TO DEPOSIT SILICON - In one aspect, a method of forming a silicon layer on a substrate is provided, including the steps providing a substrate; and introducing hydrogen and silane into a chamber containing the substrate such that a layer of silicon is deposited on the substrate; wherein the silane is less than about 99.999% pure. Numerous other aspects are provided. | 09-24-2009 |
| 20130101737 | Non-Stick Masking Fixtures and Methods of Preparing Same - Non-stick fixtures for selectively masking portions of a workpiece during application of a workpiece coating are described herein. These fixtures have predetermined surfaces thereon having an average surface roughness of about 25 Ra or less and a Rockwell hardness of about 65 Rc or more. The controlled average surface roughness ensures that these fixtures are non-stick with respect to the workpiece coating being applied to the workpieces disposed therein. The controlled Rockwell hardness ensures that the desired average surface roughness can be maintained throughout repeated use of the fixture in harsh coating environments. These fixtures reduce the workpiece coating bridging that occurs between the fixture and the workpiece, and also reduce the amount of overspray that occurs on the workpiece, thereby minimizing the amount of handwork and/or rework that is necessary after the workpiece is coated. This improves process cycle times and yields significantly. | 04-25-2013 |
| 20090232986 | HEATED VALVE MANIFOLD FOR AMPOULE - Embodiments of the invention provide an apparatus and a method for generating a gaseous chemical precursor that may be used in a vapor deposition processing system. In one embodiment, the apparatus contains a valve manifold assembly, which includes a valve assembly body having at least one embedded electric heater, an inlet channel passing through the valve assembly body, a first pneumatic valve and a first manual valve coupled to the valve assembly body and positioned to control fluid flow within the inlet channel, an outlet channel passing through the valve assembly body, and a second pneumatic valve and a second manual valve coupled to the valve assembly body and positioned to control fluid flow within the outlet channel. The valve manifold assembly further contains a bypass channel connected to and between the inlet and outlet channels, and containing a bypass valve positioned to control fluid flow within the bypass channel. | 09-17-2009 |
| 20090232984 | Apparatus and Method of Film Formation - In a vacuum chamber | 09-17-2009 |
| 20080317956 | Device and Method for Continuous Chemical Vapour Deposition Under Atmospheric Pressure and Use Thereof - The invention relates to a device and a method for continuous chemical vapour deposition under atmospheric pressure on substrates. The device is hereby based on a reaction chamber, along the open sides of which the substrates are guided, as a result of which the corresponding coatings can be effected on the side of the substrates which is orientated towards the chamber interior. | 12-25-2008 |
| 20110256315 | SHOWERHEAD ASSEMBLY WITH GAS INJECTION DISTRIBUTION DEVICES - A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. The apparatus includes a showerhead assembly with separate inlets and manifolds for delivering separate processing gases into a processing volume of the chamber without mixing the gases prior to entering the processing volume. The showerhead includes a plurality of gas distribution devices disposed within a plurality of gas inlets for injecting one of the processing gases into and distributing it across a manifold for uniform delivery into the processing volume of the chamber. Each of the gas distribution devices preferably has a nozzle configured to evenly distribute the processing gas flowing therethrough while minimizing recirculation of the processing gas within the manifold. As a result, improved deposition uniformity is achieved on a plurality of substrates positioned in the processing volume of the processing chamber. | 10-20-2011 |
| 20120088031 | GAS DISCHARGE PIPE AND ASSOCIATED METHOD - The embodiments of the present invention describe a gas discharge pipe comprising a first discharge channel and at least one second discharge channel designed to be connected respectively to a first vacuum pump and to at least a second vacuum pump on the one hand and to a reactor outlet on the other hand, in which the first discharge channel and at least the second discharge channel comprise first means and at least second means for injecting an inert gas in which the direction of injection is respectively oriented opposite to the direction of suction of the vacuum pumps. | 04-12-2012 |
| 20110293831 | LINEAR BATCH CHEMICAL VAPOR DEPOSITION SYSTEM - Described is a linear batch CVD system that includes a deposition chamber, one or more substrate carriers, gas injectors and a heating system. Each substrate carrier is disposed in the deposition chamber and has at least one receptacle configured to receive a substrate. The substrate carriers are configured to hold substrates in a linear configuration. Each gas injector includes a port configured to supply a gas in a uniform distribution across one or more of the substrates. The heating system includes at least one heating element and a heating control module for uniformly controlling a temperature of the substrates. The system is suitable for high volume CVD processing of substrates. The narrow width of the deposition chamber enables a uniform distribution of precursor gases across the substrates along the length of the reaction chamber and permits a greater number of substrates to be processed in comparison to conventional deposition chambers. | 12-01-2011 |
| 20090117274 | SOLUTION BASED LANTHANUM PRECURSORS FOR ATOMIC LAYER DEPOSITION - Alkyl cyclopentadienyl precursors for use in ALD processes are disclosed. The present invention particularly relates to La alkyl cyclopentadienyl precursors, such as tris(isopropyl-cyclopentadienyl) Lanthanum. | 05-07-2009 |
| 20090232985 | METHOD OF FORMING SILICON OXIDE CONTAINING FILMS - A method of forming a silicon oxide film, comprising the steps of: —providing a treatment substrate within a reaction chamber; —purging the gas within the reaction chamber by feeding an inert gas into the chamber under reduced pressure at a substrate temperature of 50 to 4000 C, —adsorbing, at the same temperatures and under reduced pressure, a silicon compound on the treatment substrate by pulsewise introduction of a gaseous silicon compound into the reaction chamber, —purging, at the same temperatures and under reduced pressure, the unadsorbed silicon compound in the reaction chamber with an inert gas, —at the same temperatures and under reduced pressure, introducing a pulse of ozone-containing mixed gas into the reaction chamber and producing silicon oxide by an oxidation reaction with the silicon compound adsorbed on the treatment substrate; and—repeating steps 1) to 4) if necessary to obtain the desired thickness on the substrate. | 09-17-2009 |
| 20100297350 | FREE-STANDING SILICON CARBIDE ARTICLES FORMED BY CHEMICAL VAPOR DEPOSITION AND METHODS FOR THEIR MANUFACTURE - Improved methods for manufacturing silicon carbide rings using chemical vapor deposition. Cylindrical tubes are used as deposition substrates and the resulting material deposited on the inside surface of cylindrical tubes or on the outside surface of cylindrical mandrels, or both, is sliced or cut into the desired ring size and shape. The resulting rings have a crystal growth that is oriented substantially planar to the finished article. The invention also relates to nitrogen doped silicon carbide material, as well as to silicon carbide structures having axes of grain growth substantially parallel to the plane of the structure and to each other, and having rotational orientation that is substantially random with respect to the axes of grain growth of the grains. | 11-25-2010 |
| 20110143035 | Thin Film Deposition System and Method for Depositing Thin Film - A thin film deposition system and a method for deposit a thin film are disclosed. A thin film deposition system includes a source material feeder configured to feed source material, a source gas feeder comprising a vaporizer connected with the source material feeder to evaporate the source material fed by the source material feeder, a thin film deposition device connected with the source gas feeder to deposit the evaporated source material fed by the source gas feeder on a treatment object, vaporizer exhaustion unit having an end connected with the vaporizer to ventilate an inside of the vaporizer, and a pressure adjuster connected with the exhaustion tube to adjust the pressure of the exhaustion tube to control the velocity of source material fed to the vaporizer. | 06-16-2011 |
| 20090297710 | Methods and apparatus for deposition reactors - The invention relates to methods and apparatus in which precursor vapor is guided along at least one in-feed line into a reaction chamber of a deposition reactor, and material is deposited on surfaces of a batch of vertically placed substrates by establishing a vertical flow of precursor vapor in the reaction chamber and having it enter in a vertical direction in between said vertically placed substrates. | 12-03-2009 |
| 20090214785 | THERMALIZATION OF GASEOUS PRECURSORS IN CVD REACTORS - The present invention relates to the field of semiconductor processing and provides apparatus and methods that improve chemical vapor deposition (CVD) of semiconductor materials by promoting more efficient thermalization of precursor gases prior to their reaction. In preferred embodiments, the invention comprises heat transfer structures and their arrangement within a CVD reactor so as to promote heat transfer to flowing process gases. In certain preferred embodiments applicable to CVD reactors transparent to radiation from heat lamps, the invention comprises radiation-absorbent surfaces placed to intercept radiation from the heat lamps and to transfer it to flowing process gases. | 08-27-2009 |
| 20080241381 | METHOD FOR PRE-CONDITIONING A PRECURSOR VAPORIZATION SYSTEM FOR A VAPOR DEPOSITION PROCESS - A method for pre-conditioning a film precursor vaporization system configured to supply a film precursor vapor to a deposition system for performing a deposition process is described. Prior to the deposition process, the gas pressure within the film precursor vaporization system is adjusted to a pre-determined target pressure. For example, the gas pressure within the film precursor vaporization system can be adjusted to a pressure consistent with a flow of process gas containing the film precursor vapor and a carrier gas to the deposition system at a flow rate utilized during the deposition process without introducing the process gas to the deposition system prior to the deposition process. | 10-02-2008 |
| 20100112215 | CHEMICAL PRECURSOR AMPOULE FOR VAPOR DEPOSITION PROCESSES - An apparatus for generating a gaseous chemical precursor is provided and contains a canister having a sidewall, a top, and a bottom encompassing an interior volume therein, an inlet port and an outlet port in fluid communication with the interior volume, and an inlet tube extending into the canister and having an inlet end and an outlet end, wherein the inlet end is coupled to the inlet port. The apparatus further contains a gas dispersion plate coupled to the outlet end of the inlet tube, wherein the gas dispersion plate is at an angle within a range from about 3° to about 80°, relative to a horizontal plane which is perpendicular to a vertical axis of the canister. | 05-06-2010 |
| 20100112216 | Chemical vapor deposition with elevated temperature gas injection - A chemical vapor deposition reactor and method. Reactive gases, such as gases including a Group III metal source and a Group V metal source, are introduced into a rotating-disc reactor and directed downwardly onto a wafer carrier and substrates which are maintained at an elevated substrate temperature, typically above about 400° C. and normally about 700-1100° C. to deposit a compound such as a III-V semiconductor. The gases are introduced into the reactor at an inlet temperature desirably above about 75° C. and most preferably about 100°-250° C. The walls of the reactor may be at a temperature close to the inlet temperature. Use of an elevated inlet temperature allows the use of a lower rate of rotation of the wafer carrier, a higher operating pressure, lower flow rate, or some combination of these. | 05-06-2010 |
| 20090087563 | COATING OF DISPLACER COMPONENTS (TOOTH COMPONENTS) FOR PROVIDING A DISPLACER UNIT WITH CHEMICAL RESISTANCE AND TRIBOLOGICAL PROTECTION AGAINST WEAR - The invention relates to a method for producing a displacer component that is coated with a diamond coating or layer as well as such a structural component (as a tribologically loaded part). In order to convey or dose a chemically aggressive fluid, a basic structural component ( | 04-02-2009 |
| 20090087564 | Substrate processing system - A substrate processing system which utilizes reactive substances or carrier gases to process the surface of a substrate is provided. The system includes a gas supply source for supplying a process gas containing a reactive substance, a reservoir tank connected to the gas supply source for reserving the process gas, a reactor for exposing a substrate placed therein to the process gas, a first circulation pipe for circulating the process gas inside the reactor to the reservoir tank, a second circulation pipe for circulating at least part of the process gas in the reservoir tank to the reactor, and a flow regulating valve disposed in the second circulation pipe for controlling the amount of process gas introduced into the reactor. | 04-02-2009 |
| 20100098856 | METHOD FOR FABRICATING I -III-VI2 COMPOUND THIN FILM USING SINGLE METAL-ORGANIC CHEMICAL VAPOR DEPOSITION PROCESS - Disclosed herein is a method for producing a 1-IH-VI2 compound thin film on a substrate through a single Metal Organic Chemical Vapor Deposition (MOCVD) process, wherein a Group III element and Group VI element-containing single precursor, a Group I metal-containing precursor, and a Group VI element-containing precursor or a Group VI element-containing gas are concurrently supplied to a substrate and subjected to MOCVD to form a I-III-VI2 compound thin film on the substrate. The method employs a single deposition process to form the thin film and is thus provides a more economical, simplified process as compared to conventional methods. In addition, the method is capable of producing a thin film with an even surface and few or no inner pores, and, advantageously, is thus useful as a light-absorbing layer for a solar cell. | 04-22-2010 |
| 20090280249 | PROCESS AND APPARATUS FOR FLASH EVAPORATION - A flash evaporation apparatus includes: a reaction chamber; a drum to support a continuously conveyed film; a plurality of evaporators; monomer tanks which are connected to the respective evaporators and hold different kinds of liquid monomers therein; liquid feeding pumps for feeding the monomers from the monomer tanks to the evaporators; a merging section for merging vaporized monomers discharged from the evaporators; a mixer connected to the merging section; and a nozzle connected to the mixer. Accordingly, the flash evaporation apparatus can vaporize different kinds of monomers using separate evaporators and mix the monomers. | 11-12-2009 |
| 20090291212 | VOLATILE METAL COMPLEXES OF PERFLUORO-tert-BUTANOL - Highly volatile MOCVD (Metal-Organic Chemical Vapor Deposition) precursors are disclosed comprising a complex between a fluoroalkoxide ligand and one or more alkali, alkaline earth, lanthanoids or yttrium metals and one or more donor molecules. In one example, the fluoroalkoxide ligand is perfluoro-tert-butoxide and the complex is a heterobimetallic complex. These MOCVD precursors are highly volatile, non-oligomeric, non-pyrophoric and can be synthesized with high yields. They are ideally suited for MOCVD applications because of their ability to vaporize at low temperatures and at atmospheric pressure thus enabling the deposition of a more uniform and homogeneous metal coating of known stoichiometry on to a substrate. | 11-26-2009 |
| 20080213478 | VERTICAL CVD APPARATUS AND CVD METHOD USING THE SAME - A vertical CVD apparatus includes a supply system configured to supply process gases into a process chamber, and a control section configured to control an operation of the apparatus. The supply system includes a plurality of first delivery holes connected to a first reactive gas line to supply a first reactive gas, and a plurality of second delivery holes connected to a second reactive gas line to supply a second reactive gas. Each set of the first delivery holes and the second delivery holes are arrayed in a vertical direction at a position adjacent to edges of target substrates, so as to be distributed entirely over the vertical length of the target substrates stacked at intervals. The control section controls the supply system to alternately supply first and second reactive gases, thereby forming a thin film derived from the first and second reactive gases on the target substrates. | 09-04-2008 |
| 20080213477 | INLINE VACUUM PROCESSING APPARATUS AND METHOD FOR PROCESSING SUBSTRATES THEREIN - An inline vacuum processing apparatus for processing of substrates in vacuum comprises at least one load-lock chamber, at least two subsequent deposition chambers to be operated with essentially the same set of coating parameters and at least one unload-lock chamber plus means for transferring, post-processing and/or handling substrates through and in the various chambers. A method for depositing a thin film on a substrate in such processing system comprises the steps of introducing a first substrate into a load-lock chamber, lowering the pressure in said chamber; transferring the substrate into a first deposition chamber; depositing a layer of a first material on said first substrate using a first set of coating parameters; transferring said first substrate into a second, subsequent deposition chamber of said inline system without breaking vacuum and depositing a further layer of said first material on said first substrate using substantially the same set of parameters. Simultaneously to step f) a second substrate is being treated in said inline vacuum system according to step d). | 09-04-2008 |
| 20080241382 | Strained metal nitride films and method of forming - A method for forming a strained metal nitride film and a semiconductor device containing the strained metal nitride film. The method includes exposing a substrate to a gas containing a metal precursor, exposing the substrate to a gas containing a nitrogen precursor activated by a plasma source at a first level of plasma power and configured to react with the metal precursor with a first reactivity characteristic, and exposing the substrate to a gas containing the nitrogen precursor activated by the plasma source at a second level of plasma power different from the first level and configured to react with the metal precursor with a second reactivity characteristic such that a property of the metal nitride film formed on the substrate changes to provide the strained metal nitride film. | 10-02-2008 |
| 20080241383 | METHOD FOR PRODUCING HYDROGEN GAS SEPARATION MATERIAL - The invention provides a method for consistently producing a hydrogen gas separator with a good performance balance. The method includes the process for preparing a porous substrate and the process for forming a silica coat on the substrate by chemical vapor deposition in which a reaction is brought about between a silica source provided to one side of the substrate and an oxygen-containing gas supplied to the other side of the substrate. The vapor deposition process is carried out using as the silica source a silicon compound (a) with Si-Z-Si bonds (Z is O or N) in the molecule. | 10-02-2008 |
| 20080241380 | METHOD FOR PERFORMING A VAPOR DEPOSITION PROCESS - A method for performing a vapor deposition process is described. The vapor deposition process involves the deposition of a thin film, such as a ruthenium (Ru), rhenium (Re) or rhodium (Rh) film, on a substrate using a solid-phase or liquid-phase precursor. The method facilitates the initiation of gas lines to supply dilution gas(es), carrier gas(es) and precursor vapor to the deposition system, the pre-heating and heating of the substrate, the pre-conditioning of the film precursor vaporization system, and the flow stabilization of the carrier gas(es) and the precursor vapor, for example. | 10-02-2008 |
| 20080311297 | CVD METHOD USING METAL CARBONYL GAS AND COMPUTER STORAGE MEDIUM STORING PROGRAM FOR CONTROLLING SAME - A CVD method for forming a metal film on a substrate by using a metal carbonyl gas includes a preparing step for setting a vacuum chamber at a vacuum pressure and heating the substrate in the vacuum chamber to a first temperature where the metal carbonyl gas is decomposed. Also included are a supplying step for supplying the metal carbonyl gas into the vacuum chamber while exhausting the vacuum chamber with a first vacuum pumping speed and a removing step for removing a decomposed gas of the metal carbonyl gas by stopping supplying of the metal carbonyl gas and quickly exhausting the vacuum chamber with a second vacuum pumping speed sufficiently higher than the first vacuum pumping speed. The supplying step and the removing step can be repeatedly as desired. | 12-18-2008 |
| 20080274282 | Fabrication method of size-controlled, spatially distributed nanostructures by atomic layer deposition - A method of growing spatially-separated and size-controlled particles on substrate surfaces is provided. The method utilizes chemical modification of the substrate surface, an atomic layer deposition (ALD) system, providing a modified layer to the substrate surface and providing an ALD material for nanoparticle deposition. The method induces a Volmer-Weber growth method, where islands of the nanoparticles are formed on the surface. The modified layer controls a number of nucleation sites on the surface, where controlling the number of ALD cycles limits an amount of deposited the material for discrete the nanoparticles. The modified layer can include self-assembled monolayers, modified hydrophobicity of the surface, H-terminated surfaces, and varying functional groups within the modified layer, where thermally attached alkenes, photochemically attached alkenes, thermally attached alkynes or photochemically attached alkynes are attached to the H-terminated surfaces, and the density of the nucleation sites of the nanoparticles are thereby managed. | 11-06-2008 |
| 20080286463 | RF SHUTTER - The present invention generally comprises an RF shutter assembly for use in a plasma processing apparatus. The RF shutter assembly may reduce the amount of plasma creep below the substrate and shadow frame during processing, thereby reducing the amount of deposition that occurs on undesired surfaces. By reducing the amount of deposition on undesired surfaces, particle flaking and thus, substrate contamination may be reduced. | 11-20-2008 |
| 20100143588 | CHEMICAL VAPOR DEPOSITION FLOW INLET ELEMENTS AND METHODS - A flow inlet element ( | 06-10-2010 |
| 20110268880 | REACTOR CLEAN - A method and apparatus for performing chemical vapor deposition (CVD) processes is provided. In one embodiment, the apparatus comprises a reactor body having a processing region, comprising a wafer carrier track having a wafer carrier disposed thereon, at least one sidewall having an exhaust assembly for exhausting gases from the processing region, a lid assembly disposed on the reactor body, comprising a lid support comprising a first showerhead assembly for supplying reactant gases to the processing region, a first isolator assembly for supplying isolation gases to the processing region, a second showerhead assembly for supplying reactant gases to the processing region, and a second isolator assembly for supplying isolation gases to the processing region, wherein the first showerhead assembly, the first isolator assembly, the second showerhead assembly, and the second isolator assembly are consecutively and linearly disposed next to each other. | 11-03-2011 |
| 20090136668 | METHOD AND APPARATUS TO HELP PROMOTE CONTACT OF GAS WITH VAPORIZED MATERIAL - Vaporizable material is supported within a vessel to promote contact of an introduced gas with the vaporizable material, and produce a product gas including vaporized material. A heating element supplies heat to a wall of the vessel to heat vaporizable material disposed therein. The vessel may comprise an amoule having a removable top. Multiple containers defining multiple material support surfaces may be stacked disposed within a vessel in thermal communication with the vessel. A tube may be disposed within the vessel and coupled to a gas inlet. Filters, flow meters, and level sensors may be further provided. Product gas resulting from contact of introduced gas with vaporized material may be delivered to atomic layer deposition (ALD) or similar process equipment. At least a portion of source material including a solid may be dissolved in a solvent, followed by removal of solvent to yield source material (e.g., a metal complex) disposed within the vaporizer. | 05-28-2009 |
| 20090081366 | DELIVERY DEVICE FOR DEPOSITION - A delivery device for thin-film material deposition has at least first, second, and third inlet ports for receiving a common supply for a first, a second and a third gaseous material, respectively. Each of the first, second, and third elongated emissive channels allow gaseous fluid communication with one of corresponding first, second, and third inlet ports. The delivery device can be formed from apertured plates, superposed to define a network of interconnecting supply chambers and directing channels for routing each of the gaseous materials from its corresponding inlet port to a corresponding plurality of elongated emissive channels. The delivery device comprises a diffusing channel formed by a relief pattern between facing plates. Also disclosed is a process for thin film deposition. Finally, more generally, a flow diffuser and a corresponding method of diffusing flow is disclosed. | 03-26-2009 |
| 20090162551 | HAFNIUM OXIDE ALD PROCESS - A method and apparatus for performing ALD deposition of hafnium oxide on a substrate is provided. The apparatus includes a process chamber, a precursor delivery subsystem, an oxidizer delivery subsystem, a purge gas subsystem, a solvent flush subsystem, and optional solvent recovery and purification subsystems. The method includes pulsing precursor compounds into the process chamber in sequence. While one precursor is pulsed, purge gas is provided through the other precursor line. After pulsing, precursor lines are purged, and the chamber is evacuated and purged. A solvent flush step is employed to remove precursor deposits that build up in piping over time. | 06-25-2009 |
| 20090297709 | CARBON ENCAPSULATED METAL PARTICLES AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing commercial grade, carbon-coated or core-shell type metal powders with highly thermostable characteristics utilizes high-temperature carbonyl decomposition in the presence of carbon monoxide under normal atmospheric conditions. | 12-03-2009 |
| 20090029048 | METHOD OF THERMAL STRESS COMPENSATION - A method of thermal stress compensation includes providing a substrate. A first film is then formed on the substrate. Thereafter, a second film is also formed on the substrate. The second film has a negative coefficient of thermal expansion. | 01-29-2009 |
| 20090324827 | CVD FILM FORMING METHOD AND CVD FILM FORMING APPARATUS - A wafer W is arranged on a susceptor | 12-31-2009 |
| 20090324826 | Film Deposition Apparatus, Film Deposition Method, and Computer Readable Storage Medium - A disclosed film deposition apparatus includes a turntable having in one surface a substrate receiving portion along a turntable rotation direction; a first reaction gas supplying portion for supplying a first reaction gas; a second reaction gas supplying portion for supplying a second reaction gas; a separation area between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, the separation area including a separation gas supplying portion for supplying a first separation gas in the separation area, and a ceiling surface opposing the one surface to produce a thin space; a center area having an ejection hole for ejecting a second separation gas along the one surface; and an evacuation opening for evacuating the chamber. | 12-31-2009 |
| 20090324828 | FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER READABLE STORAGE MEDIUM - A disclosed film deposition apparatus includes a turntable having in one surface a substrate receiving portion along a turntable rotation direction; a first reaction gas supplying portion for supplying a first reaction gas; a second reaction gas supplying portion for supplying a second reaction gas; a separation area between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, the separation area including a separation gas supplying portion for supplying a first separation gas in the separation area, and a ceiling surface opposing the one surface to produce a thin space; a center area having an ejection hole for ejecting a second separation gas along the one surface; and an evacuation opening for evacuating the chamber. | 12-31-2009 |
| 20090098291 | METHOD OF PRODUCING SOLID SUPPORT FOR BIOLOGICAL ANALYSIS USING PLASTIC MATERIAL - The present invention provides a method of manufacturing a solid support for biological analysis using a plastic material, the method including: depositing a metal film on a plastic substrate on which a microstructure is formed; depositing an inorganic oxide on the metal film; and anchoring a compound with an amino functional group or a compound with a water contact angle of 70 to 95 degrees on the inorganic oxide. | 04-16-2009 |
| 20100124609 | Methods Of Forming Metal-Containing Structures, And Methods Of Forming Germanium-Containing Structures - Some embodiments include methods of forming metal-containing structures. A first metal-containing material may be formed over a substrate. After the first metal-containing material is formed, and while the substrate is within a reaction chamber, hydrogen-containing reactant may be used to form a hydrogen-containing layer over the first metal-containing material. The hydrogen-containing reactant may be, for example, formic acid and/or formaldehyde. Any unreacted hydrogen-containing reactant may be purged from within the reaction chamber, and then metal-containing precursor may be flowed into the reaction chamber. The hydrogen-containing layer may be used during conversion of the metal-containing precursor into a second metal-containing material that forms directly against the first metal-containing material. Some embodiments include methods of forming germanium-containing structures, such as, for example, methods of forming phase change materials containing germanium, antimony and tellurium. | 05-20-2010 |
| 20100003405 | METHOD FOR DEPOSITING LAYERS IN A CVD REACTOR AND GAS INLET ELEMENT FOR A CVD REACTOR - The invention relates to a method for coating one or more substrates with a layer the components of which are passed into a process chamber ( | 01-07-2010 |
| 20090246374 | GAS DISTRIBUTION SYSTEM AND METHOD FOR DISTRIBUTING PROCESS GAS IN A PROCESSING SYSTEM - An apparatus and related method for distributing process gas in a vapor deposition system is described. The gas distribution system includes a vertically movable piston within its plenum, and the movement of the piston controls the flow rate of process gas through the vapor distribution plate of the gas distribution system. The piston can be used to accommodate changes in processing parameters that affect flow characteristics and to create edge-enhanced, uniform, and center-enhanced profiles of deposited material on a substrate without the need to replace the vapor distribution plate. | 10-01-2009 |
| 20090258143 | REAGENT DISPENSING APPARATUS AND DELIVERY METHOD - This invention relates to a vapor or liquid phase reagent dispensing apparatus that may be used for dispensing vapor or liquid phase reagents such as precursors for deposition of materials in the manufacture of semiconductor materials and devices. This invention reduces the number of container designs required to support different applications. A standard two port container without a tube can be converted to a container capable of being used in applications which require a tube (i.e., bubbler tube for gas delivery or a dip tube for liquid delivery), by inserting a gasket/tube adapter between one of the ports and the corresponding valve in accordance with this invention. | 10-15-2009 |
| 20110229638 | SYSTEM AND METHOD FOR POLYCRYSTALLINE SILICON DEPOSITION - A method for making polycrystalline silicon from a gas comprising at least one silicon precursor compound is disclosed. The method can be effected from a gas comprising a polycrystalline silicon precursor compound in a chemical vapor deposition system by establishing a first flow pattern of the gas in a chemical vapor deposition reaction chamber, promoting reaction of at least a portion of the at least one precursor compound from the gas having the first flow pattern into polycrystalline silicon, establishing a second flow pattern of the gas in the reaction chamber, and promoting reaction of at least a portion of the at least one precursor compound from the gas having the second flow pattern into polycrystalline silicon. The chemical vapor deposition system can comprise a gas source comprising a gas with at least one precursor compound; a reaction chamber at least partially defined by a base plate and a bell jar; a first nozzle group disposed in one of the base plate and the bell jar, the first nozzle group fluidly connected to the gas source through a first manifold and a first flow regulator; a second nozzle group including a plurality of nozzles disposed in one of the base plate and the bell jar, the plurality of nozzles fluidly connected to the gas source through a second manifold and a second flow regulator. | 09-22-2011 |
| 20100260935 | FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER READABLE STORAGE MEDIUM - A rotation table on which a wafer is placed is rotated around a vertical axis in order to supply to an upper surface of the wafer a first reaction gas for allowing the first reaction gas to be adsorbed on the upper surface, an auxiliary gas that reacts with the first reaction gas to produce an intermediate product having reflowability, and a second reaction gas that is reacted with the intermediate product to produce a reaction product in this order; and the reaction product is heated by a heating lamp in order to densify the reaction product. | 10-14-2010 |
| 20100227060 | ATOMIC LAYER DEPOSITION APPARATUS AND METHOD OF FABRICATING ATOMIC LAYER USING THE SAME - An atomic layer deposition apparatus includes a chamber, a vacuum pump to control a pressure in the chamber, a gas supply unit to supply a reaction gas into the chamber, a substrate holder disposed between the vacuum pump and the gas supply unit and having a heater, a mask assembly disposed between the substrate holder and the gas supply unit and having a cooling path to move coolant, and a coolant source to supply the coolant into the cooling path. The mask assembly is positioned a first distance from a substrate, and coolant is supplied into the cooling path of the mask assembly. The substrate is heated using the heater of the substrate holder, a pressure of the chamber is controlled using the vacuum pump, and reaction gasses are sequentially supplied through the gas supply unit. | 09-09-2010 |
| 20100227059 | FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER READABLE STORAGE MEDIUM - A film is deposited to a predetermined thickness on a wafer by allowing the wafer placed on a susceptor to alternately move through plural process areas where corresponding plural reaction gases are supplied from corresponding plural reaction gas supplying portions and a separation area where a separation gas is supplied from a separation gas supplying portion in order to separate the plural reaction gases. Such movement is achieved by rotating the susceptor relative to the plural reaction gas supplying portions and the separation gas supplying portion, or rotating the plural reaction gas supplying portions and the separation gas supplying portion relative to the susceptor. Then, when the film is deposited in the above manner to a predetermined thickness, the film deposition is temporarily stopped; the wafer is rotated around its center; and the film is deposited to another predetermined thickness in the same manner. | 09-09-2010 |
| 20120141677 | METHOD OF MANUFACTURING THIN FILM - The present invention provides a thin film manufacturing method which realizes stable, highly-efficient film formation using a nozzle-type evaporation source while avoiding unnecessary scattering and deposition of a film formation material before the start of the film formation. Used is a film forming apparatus including: an evaporation chamber | 06-07-2012 |
| 20100221427 | METHODS AND APPARATUS FOR CONTROLLED CHEMICAL VAPOR DEPOSITION - A gas injector system is provided that allows for improved distribution and directional control of the vapor material in a CVD or CVI process. Gas injector systems may be used without experiencing significant clogging of gas injector tube apertures over multiple CVD procedures. Further, a gas injector system include a dual aperture release system and/or allow vapor material to flow both substantially horizontally and substantially vertically. | 09-02-2010 |
| 20090074964 | METHOD AND APPARATUS FOR REMOVING SUBSTANCES FROM GASES - The present invention concerns a method and an apparatus for removing substances from gases discharged from gas phase reactors. In particular, the invention provides a method for removing substances contained in gases discharged from an ALD reaction process, comprising contacting the gases with a “sacrificial” material having a high surface area kept at essentially the same conditions as those prevailing during the gas phase reaction process. The sacrificial material is thus subjected to surface reactions with the substances contained in the gases to form a reaction product on the surface of the sacrificial material and to remove the substances from the gases. The present invention diminishes the amount of waste produced in the gas phase process and reduces wear on the equipment. | 03-19-2009 |
| 20090074963 | OXIDE FILMS, A METHOD OF PRODUCING THE SAME AND STRUCTURES HAVING THE SAME - An object of the present invention is to produce an oxide film having good surface morphology and crystal quality, by a metal organic chemical vapor deposition using two or more raw material gases of metal organic compounds and oxygen gas. It is used a film forming system having a first supply hole | 03-19-2009 |
| 20090181169 | METHOD FOR GROWING THIN FILMS - The invention relates to a method and apparatus for growing a thin film onto a substrate, in which method a substrate placed in a reaction space ( | 07-16-2009 |
| 20120171377 | WAFER CARRIER WITH SELECTIVE CONTROL OF EMISSIVITY - A wafer carrier for use in a chemical vapor deposition apparatus includes at least one region on its outer surface having a substantially different (e.g., lower) emissivity than other regions on the outer surface. The modified emissivity region may be located on the outer edge, the top surface, and/or the bottom surface of the carrier. The region may be associated with one or more wafer pockets of the wafer carrier. The modified emissivity region may be shaped and sized so as to modify the heat transmission through the region, and thereby increase the temperature uniformity across portions of the top surface of the wafer carrier or across individual wafers. The modified emissivity region may be provided by a coating on the outer surface of the wafer carrier. | 07-05-2012 |
| 20090110826 | REACTION APPARATUS HAVING MULTIPLE ADJUSTABLE EXHAUST PORTS - A reaction apparatus for a semiconductor fabrication apparatus, wherein the reaction apparatus includes at least two adjustable outlet ports for withdrawing reactant gases from the reaction chamber. Adjustment of the flow rate through each of the outlet ports selectively modifies the flow pattern of the reactant gases within the reaction chamber to maintain a desired flow pattern therewithin, such as a substantially uniform flow over the surface of a substrate being processed, and/or minimization of turbulence within the reactor. | 04-30-2009 |
| 20100310772 | GAS SUPPLY DEVICE - A gas supply device disposed opposite to a substrate mounted on a loading board in a processing container and supplying a process gas for processing the substrate comprises a top plate member having a recess formed to spread gradually toward the state in order to constitute a gas diffusion space at a position facing the substrate on the loading board, and a gas supply nozzle projecting into the recess from the top thereof and having a plurality of gas supply holes along the circumferential direction of the recess. | 12-09-2010 |
| 20100310771 | VAPOR DEPOSITION REACTOR AND METHOD FOR FORMING THIN FILM - A vapor deposition reactor and a method for forming a thin film. The vapor deposition reactor includes at least one first injection portion for injecting a reacting material to a recess in a first portion of the vapor deposition reactor. A second portion is connected to the first space and has a recess connected to the recess of the first portion. The recess of the second portion is maintained to have pressure lower than the pressure in the first space. A third portion is connected to the second space, and an exhaust portion is connected to the third space. | 12-09-2010 |
| 20090035465 | CHEMICAL VAPORIZER FOR MATERIAL DEPOSITION SYSTEMS AND ASSOCIATED METHODS - System and method for operating a material deposition system are disclosed. In one embodiment, the method can include periodically injecting a precursor into a vaporizer through an injector at the vaporizer, vaporizing the precursor in the vaporizer and supplying the vaporized precursor to a reaction chamber in fluid communication with the vaporizer, and shutting down the vaporizer and the reaction chamber after a period of time. The method can also include conducting maintenance of the injector at the vaporizer by using a vapor solvent rinse. | 02-05-2009 |
| 20110033623 | METHOD OF PREVENTING CARBON FRICTION MATERIAL ANTI OXIDATION SYSTEM MIGRATION BY UTILIZING CARBON VAPOR DEPOSITION - Method of protecting carbon-carbon composite brake disc against migration of anti-oxidant composition through the porosity of the composite brake disc. The method starts with a porous carbon-carbon composite brake disc, and densifies it to a density of 1.70 grams per cubic centimeter or higher. The densified brake disc is then machine to the required dimensions. The pores in the densified brake disc are closed by subjecting it to CVD/CVI processing employing (i) a gaseous feedstock comprising natural gas spiked with 10 to 25% of a more reactive gas, and/or (ii) a temperature in the range of 1100° C. to 1500° C., and/or (iii) a gas pressure in the range 10 to 100 torr, and/or (iv) a gas flow rate of 300 cc/min to 450 cc/min. CVD/CVI processing carried out using these parameters deposits carbon within and closes the pores of the surface area of the carbon-carbon composite brake disc. Subsequently, an anti-oxidant solution is applied to the non-friction surfaces of the resulting carbon-carbon composite brake disc. Due to the fact that the surface pores have been closed by processing using the specified conditions, the composite brake disc resists migration of the anti-oxidant through the body of the disc to the friction surfaces thereof. | 02-10-2011 |
| 20100260936 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND COMPUTER-READABLE STORAGE MEDIUM - In a substrate processing apparatus, a film deposition device and a heat processing device to perform an anneal processing are airtightly connected to a vacuum conveying chamber, and a substrate rotating unit to cause a substrate to rotate around a vertical axis is provided in the vacuum conveying chamber. A control unit is arranged to stop a relative rotation of a plurality of reactive gas supplying units, a separating gas supplying unit and a table by a rotation device in the middle of a film deposition process of the substrate, cause a conveying unit to take out the substrate from a vacuum chamber, and output a control signal that causes a substrate rotating unit to change a direction of the substrate. | 10-14-2010 |
| 20100055316 | FILM DEPOSITION APPARATUS, SUBSTRATE PROCESSING APPARATUS, FILM DEPOSITION METHOD, AND STORAGE MEDIUM - A film deposition apparatus to form a thin film by supplying first and second reaction gases within a vacuum chamber includes a turntable, a protection top plate, first and second reaction gas supply parts extending from a circumferential edge towards a rotation center of the turntable, and a separation gas supply part provided therebetween. First and second spaces respectively include the first and second reaction gas supply parts and have heights H | 03-04-2010 |
| 20100055315 | FILM DEPOSITION APPARATUS, SUBSTRATE PROCESS APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER READABLE STORAGE MEDIUM - A film deposition apparatus is configured to deposit a film on a substrate by carrying out a cycle of alternately supplying at least two kinds of reaction gases that react with each other to the substrate to stack multiple layers of a reaction product in a vacuum chamber so that a thin film is formed. The film deposition apparatus includes a rotation table, a substrate providing area, a first reaction gas supplying part, a second reaction gas supplying part, a separation area, a center part area, an evacuation opening, and a substrate cooling part. | 03-04-2010 |
| 20100055319 | FILM DEPOSITION APPARATUS, SUBSTRATE PROCESSOR, FILM DEPOSITION METHOD, AND COMPUTER-READABLE STORAGE MEDIUM - A film deposition apparatus for depositing a thin film on a substrate by feeding at least two kinds of reaction gases in a vacuum chamber includes a turntable; a substrate placement part on the turntable; a first and a second reaction gas feed part provided apart from each other to feed a first and a second reaction gas into a first and a second process region, respectively, on the turntable; a separation region positioned between the first and second process regions and including a first separation gas feed part to feed a first separation gas and a ceiling surface; a center part region positioned inside the vacuum chamber and including an ejection opening for ejecting a second separation gas; an evacuation port; and a drive part to rotate the turntable so that the substrate passes through the first and second process regions at different angular velocities of the turntable. | 03-04-2010 |
| 20100055320 | FILM DEPOSITION APPARATUS, SUBSTRATE PROCESSING APPARATUS, FILM DEPOSITION METHOD AND STORAGE MEDIUM - A film deposition apparatus includes a turntable rotatably provided in a chamber. First and second reaction gas supplying portions supply first and second reaction gases to one surface of the turntable, respectively. A separation gas is discharged from a separation gas supplying portion to a separation area between a first process area to which the first reaction gas is supplied and a second process area to which the second reaction gas is supplied. A ceiling surface is provided in the separation area to form a thin space between the turntable to allow the separation gas flowing from the separation area to a process area side. An elevation mechanism to move the substrate upward and downward is provided in a substrate placement part. The elevation mechanism is movable in upward and downward directions relative to the turntable and movable in a radial direction of the turntable. | 03-04-2010 |
| 20090035466 | RUTHENIUM FILM FORMATION METHOD AND COMPUTER READABLE STORAGE MEDIUM - A substrate is placed and heated in a process chamber. A gas of a pentadienyl compound of ruthenium, such as 2,4-dimethylpentadienyl ethylcyclopentadienyl ruthenium, and oxygen gas are supplied into the process chamber. These gases react with each other on the substrate thus heated, and a ruthenium film is thereby formed on the substrate. | 02-05-2009 |
| 20090035464 | Alkoxide compound, material for thin film formation, and process for thin film formation - An alkoxide compound of formula (I) suitable as a material for thin film formation used in thin film formation involving vaporization of a material such as CVD, a material for thin film formation including the alkoxide compound, and a process for thin film formation using the material. The process includes vaporizing the material for thin film formation, introducing the resulting vapor containing the alkoxide compound, onto a substrate, and causing the vapor to decompose and/or chemically react to form a thin film on the substrate. | 02-05-2009 |
| 20100055317 | FILM DEPOSITION APPARATUS EXPOSING SUBSTRATE TO PLURAL GASES IN SEQUENCE - A film deposition apparatus for forming a thin film by supplying a first reactant gas and a second reactant gas in a vacuum container includes a rotation table, a first reactant gas supply unit and a second reactant gas supply unit extending radially at a first angular position and at a second angular position with respect to a rotation center, respectively, a first purge gas supply unit disposed at a third angular position between the first angular position and the second angular position, a first space having a first height in an area including the first angular position, a second space having a second height in an area including the second angular position, a third space disposed in an area including the third angular position having a height lower than the first height and the second height, and a heating unit configured to heat the first purge gas. | 03-04-2010 |
| 20100055314 | FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND STORAGE MEDIUM - A disclosed film deposition apparatus includes a turntable including a substrate receiving area; a first reaction gas supplier for supplying a first reaction gas to a surface of the turntable having the substrate receiving area; a second reaction gas supplier, arranged away from the first reaction gas supplier along a circumferential direction of the turntable, for supplying a second reaction gas to the surface; a separation area located along the circumferential direction between a first process area of the first reaction gas and a second process area of the second reaction gas; a separation gas supplier for supplying a first separation gas to both sides of the separation area; a first heating unit for heating the first separation gas to the separation gas supplier; an evacuation opening for evacuating the gases supplied to the turntable; and a driver for rotating the turntable in the circumferential direction. | 03-04-2010 |
| 20100055318 | WAFER CARRIER WITH VARYING THERMAL RESISTANCE - In chemical vapor deposition apparatus, a water carrier ( | 03-04-2010 |
| 20100124610 | SUBSTRATE POSITION DETECTION APPARATUS, SUBSTRATE POSITION DETECTION METHOD, FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND A COMPUTER READABLE STORAGE MEDIUM - A disclosed substrate position detection apparatus includes an imaging portion configured to take an image of a substrate subject to a position detection; a panel member provided between the imaging portion and the substrate and including a first opening that ensures a field of view for the imaging portion with respect to the substrate, the panel member having a light scattering property; a first illuminating portion configured to illuminate the panel member; and a processing portion capable of determining a position of the substrate in accordance with the image taken through the first opening by the imaging portion. | 05-20-2010 |
| 20110076403 | VAPORIZATION APPARATUS WITH PRECISE POWDER METERING - Apparatus for vaporizing a particulate material, comprising a metering apparatus including: a reservoir; a housing having an internal volume and first and second openings for respectively receiving and discharging the particulate material; a rotatable shaft disposed in the internal volume, the shaft having a smooth surface and a circumferential groove for receiving particulate material from the reservoir and for discharging the particulate material; the rotatable shaft and the internal volume cooperating such that the particulate material is transported by the circumferential groove and not along the remainder of the rotatable shaft; a scraper disposed in relation to the second opening, having at its end substantially the same cross section as the groove in the rotating shaft, the scraper cooperating with the groove to dislodge particulate material retained therein, and in response to the shaft rotating, delivers metered amounts of particulate material through the second opening; to the flash evaporator. | 03-31-2011 |
| 20110070370 | THERMAL GRADIENT ENHANCED CHEMICAL VAPOUR DEPOSITION (TGE-CVD) - A chemical vapor deposition (CVD) apparatus is configured for thermal gradient enhanced CVD operation by the inclusion of multiple heaters, positioned so as to provide a desired thermal gradient profile across a vertical dimension of a substrate or other work piece within the chamber. So configured, the chamber may also be used for controlled growth of thin films via diffusion through intermediate films, either top down or bottom parallel to the direction of the thermal gradient. | 03-24-2011 |
| 20120148746 | METHOD OF MANUFACTURING THIN FILM - The present invention provides a thin film manufacturing method which realizes stable, highly-efficient film formation using a nozzle-type evaporation source while avoiding unnecessary scattering and deposition of a film formation material after the termination of the film formation. Used is a film forming apparatus including: an evaporation chamber | 06-14-2012 |
| 20080248200 | APPARATUS AND METHODS FOR ISOLATING CHEMICAL VAPOR REACTIONS AT A SUBSTRATE SURFACE - An apparatus and method for processing a substrate is provided. The apparatus comprises a reaction chamber, a substrate holder within the chamber, and first and second injector components. The reaction chamber has an upstream end and a downstream end, between which the substrate holder is positioned. The substrate holder is configured to support a substrate so that the substrate is within a plane extending generally toward the upstream and downstream ends. The first injector component is at the upstream end of the chamber and is configured to inject a first thin gas curtain toward a substrate supported by the substrate holder. The first injector component is configured to inject the first curtain generally along a first plane that is parallel to a first side of the substrate. The second injector component is configured to inject a second thin gas curtain toward the first side of the substrate. The second injector component is configured to inject the second gas curtain generally along a second plane oriented at an angle with respect to the first plane. The angled flows of source gases have reduced interdiffusion volume above the substrate, preferably resulting in deposition substantially along a line extending across the center of the substrate. The substrate can be rotated during deposition to produce a substantially uniform film on the substrate. | 10-09-2008 |
| 20080199613 | Thermal chemical vapor deposition methods, and thermal chemical vapor deposition systems - One embodiment thermal chemical vapor deposition method includes exposing a substrate within a chamber to first and second deposition precursors effective to thermally chemical vapor deposit a material on the substrate, and exhausting unreacted first and second deposition precursors from the chamber through a vacuum pump via a first exhaust line comprising a filter. A reactive gas is flowed to the material on the substrate, with the reactive gas being reactive with the material. After flowing the reactive gas, an inert purge gas is flowed through the chamber and through the vacuum pump. The flowing of the inert purge gas to the vacuum pump is through a second exhaust line not comprising the filter. The exposing, the flowing of the reactive gas, and the flowing of the inert purge gas are repeated effective to deposit material of desired thickness on the substrate. | 08-21-2008 |
| 20110020547 | HIGH DIELECTRIC CONSTANT FILMS DEPOSITED AT HIGH TEMPERATURE BY ATOMIC LAYER DEPOSITION - Methods and compositions for depositing a film on one or more substrates include providing a reactor with at least one substrate disposed in the reactor. At least one alkaline earth metal precursor and at least one titanium containing precursor are provided, vaporized, and at least partly deposited onto the substrate to form a strontium and titanium or a strontium and titanium and barium containing film. | 01-27-2011 |
| 20100330278 | METHOD FOR TREATING HIGH HYDROPHOBIC SURFACE OF SUBSTRATE - There is provided a method for treating a surface of a substrate, comprising forming a layer, such as a mixed self-assembled monolayer (SAM), on the surface via chemical vapor deposition (CVD) with a CF | 12-30-2010 |
| 20100323108 | DEPOSITION APPARATUS AND DEPOSITION METHOD - A disclosed deposition apparatus includes a catalyst reaction apparatus including an introduction part that introduces a first source gas, a catalyst container that contains a catalyst that produces reactive gas from the first source gas introduced from the introduction part, and a reactive gas ejection part that ejects the reactive gas from the catalyst container; a reactive gas separator that allows the reactive gas ejected from the reactive gas ejection part to go therethrough; a substrate supporting part that supports a substrate; and a supplying part that supplies a second source gas that reacts with the reactive gas that passes through the reactive gas separator, thereby depositing a film on the substrate. | 12-23-2010 |
| 20100068384 | High-Throughput CVD System - The use of deposition modules groups for each CVD deposition position including at least two deposition modules, together with a Motion Control System that controls and confines the motion of said deposition modules, enables a quick deposition module exchange at the deposition locations of On-Line or Off-Line CVD coating system. This results in a high volume large area CVD coating system that can increase the commercial viability of a given CVD system design through production throughput increases, production cost reductions, overall higher process flexibility and/or improved film quality. | 03-18-2010 |
| 20090176017 | SUBSTRATE PROCESSING APPARATUS - A substrate processing device comprises a reaction vessel | 07-09-2009 |
| 20110262641 | INLINE CHEMICAL VAPOR DEPOSITION SYSTEM - An inline CVD system includes a manifold and a continuous transport system. The manifold has a plurality of ports. The ports include a first precursor port, a pair of second precursor ports and a pair of pumping ports. The first precursor port is disposed between the second precursor ports and the pair of second precursor ports is disposed between the pumping ports. The first precursor port and the pair of second precursor ports are configured for coupling to a first precursor gas source and a second precursor gas source, respectively, and the pumping ports are configured to couple to a discharge system to exhaust the first and second precursor gases during a CVD process. The continuous transport system transports a substrate adjacent to the plurality of ports during the CVD process. | 10-27-2011 |
| 20100209610 | GROUP IV COMPLEXES AS CVD AND ALD PRECURSORS FOR FORMING METAL-CONTAINING THIN FILMS - A metal precursor, selected from among: (i) precursors of the formula (NR | 08-19-2010 |
| 20110305837 | POLY(ETHYLENE GLYCOL) AND POLY(ETHYLENE OXIDE) BY INITIATED CHEMICAL VAPOR DEPOSITION - A method for ionic polymerization of ethylene oxide. In the first step of the method, a gaseous monomer composition comprising ethylene oxide at a first flow rate is mixed with a gaseous ionic polymerization initiator at a second flow rate, thereby forming a mixture. The formed mixture is then heated with at least one heated filament to thereby form at least one polymer. The method may also be employed to coat a variety of different substrates in situ during the polymerization reaction. | 12-15-2011 |
| 20110305836 | ATOMIC LAYER DEPOSITION APPARATUS AND THIN FILM FORMING METHOD - An atomic layer deposition apparatus, which forms a thin film on a substrate, includes a first container that defines a first inner space and includes a substrate carrying-in and carrying-out port and a gas introduction port in different positions, the substrate being carried in and out through the substrate carrying-in and carrying-out port, gas being introduced through the gas introduction port to form the thin film on the substrate, a second container that is provided in the first container to define a second inner space separated from the first inner space, the second container including a first opening, a first moving mechanism that moves the second container in a predetermined direction, and a controller that controls the first moving mechanism such that the second container is moved to a first position where the substrate carrying-in and carrying-out port and the first opening are located opposite each other when the substrate is carried in and out, the controller controlling the first moving mechanism such that the second container is moved to a second position where the gas introduction port and the first opening are located opposite each other when the thin film is formed on the substrate. | 12-15-2011 |
| 20100098855 | FURNACE TEMPERATURE CONTROL METHOD FOR THERMAL BUDGET BALANCE - A furnace temperature control method for thermal budget balance includes the steps of: placing a plurality of batches of wafers in the furnace; processing the wafers in the furnace via a heat deposition process; adjusting temperature in the furnace during the heat deposition process so that the temperature in the furnace has a temperature gradient; and controlling and inverting the temperature gradient so that the wafers in the furnace have the same thermal budget, whereby the electric parameters of the processed wafers tend to become uniform. Accordingly, considering the influence of the thermal budget, the present invention adjusts the temperature in the furnace and balances the thermal budget of the wafers in the furnace to avoid that the electric parameters of the processed wafers have extreme values, thereby improving the yield rate. | 04-22-2010 |
| 20100055313 | ORGANORUTHENIUM COMPLEX, AND METHOD FOR PRODUCTION OF RUTHENIUM THIN FILM USING THE RUTHENIUM COMPLEX - An organoruthenium complex represented by the general formula (1-1), bis(acetylacetonato)(1,5-hexadiene)ruthenium and bis(acetylacetonato)(1,3-pentadiene)ruthenium have low melting points, show excellent stability against moisture, air and heat, and are suitable for the film formation by a CVD method. (1-1) wherein X represents a group represented by the general formula (1-2); Y represent a group represented by the general formula (1-2) or a linear or branched alkyl group having 1 to 8 carbon atoms; Z represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; and L represents an unsaturated hydrocarbon compound having at least two double bonds: (1-2) wherein R | 03-04-2010 |
| 20110064879 | ORGANOMETALLIC COMPOUNDS - Methods of vapor depositing metal-containing films using certain organometallic compounds containing a carbonyl-containing ligand are disclosed. | 03-17-2011 |
| 20120114856 | DEPOSITION APPARATUS - A deposition apparatus configured to form a thin film on a substrate includes: a reactor wall; a substrate support positioned under the reactor wall; and a showerhead plate positioned above the substrate support. The showerhead plate defines a reaction space together with the substrate support. The apparatus also includes one or more gas conduits configured to open to a periphery of the reaction space at least while an inert gas is supplied therethrough. The one or more gas conduits are configured to supply the inert gas inwardly toward the periphery of the substrate support around the reaction space. This configuration prevents reactant gases from flowing between a substrate and the substrate support during a deposition process, thereby preventing deposition of an undesired thin film and impurity particles on the back side of the substrate. | 05-10-2012 |
| 20120021128 | SUBSTRATE TRANSPORT MECHANISM CONTACTING A SINGLE SIDE OF A FLEXIBLE WEB SUBSTRATE FOR ROLL-TO-ROLL THIN FILM DEPOSITION - Systems and methods for depositing a thin film on a flexible substrate involve guiding the flexible substrate along a spiral transport path back and forth between spaced-apart first and second precursor zones so that the substrate transits through the first and second precursor zones multiple times and each time through an intermediate isolation zone without mechanically contacting an outer surface of the substrate with a substrate transport mechanism, thereby inhibiting mechanical damage to the thin film deposited on the outer surface, which may improve barrier layer performance of the thin film. | 01-26-2012 |
| 20120156374 | SECTIONAL WAFER CARRIER - A structure for a chemical vapor deposition reactor includes a support element defining oppositely-facing substantially planar upper and lower surfaces and a vertical rotational axis substantially perpendicular to the upper and lower surfaces, and a plurality of carrier sections releasably engaged with the support element. Each carrier section can include oppositely-facing substantially planar top and bottom surfaces and at least one aperture extending between the top and bottom surfaces. The carrier sections can be disposed on the support element with the bottom surfaces of the carrier sections facing toward the upper surface of the support element, so that wafers can be held in the apertures of the carrier sections with one surface of each wafer confronting the support element and an opposite surface exposed at the top surface of the carrier sections. | 06-21-2012 |
| 20120207928 | METHODS OF MAKING AND DEPOSITION METHODS USING HAFNIUM- OR ZIRCONIUM-CONTAINING COMPOUNDS - Disclosed are hafnium- or zirconium-containing compounds. The compounds may be used to deposit hafnium- or zirconium-containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition. The hafnium- or zirconium-containing compounds include a ligand at least one aliphatic group as substituents selected to have greater degrees of freedom than the substituents disclosed in the prior art. | 08-16-2012 |
| 20120207927 | HAFNIUM- AND ZIRCONIUM-CONTAINING PRECURSORS AND METHODS OF USING THE SAME - Disclosed are hafnium- and zirconium-containing precursors and methods of providing the same. The disclosed precursors include a ligand and at least one aliphatic group as substituent selected to have greater degrees of freedom than the usual substituents. The disclosed precursors may be used to deposit hafnium- or zirconium-containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition. | 08-16-2012 |
| 20120070581 | VAPOR DEPOSITION SYSTEMS AND METHODS - Vapor deposition systems and methods associated with the same are provided. The systems may be designed to include features that can promote high quality deposition; simplify manufacture, modification and use; as well as, reduce the footprint of the system, amongst other advantages. | 03-22-2012 |
| 20110091651 | Additives to Prevent Degradation of Cyclic Alkene Derivatives - This disclosure relates to compositions that include (a) at least one substituted or unsubstituted cyclic alkene, and (b) an antioxidant composition including at least one compound of Formula (I): | 04-21-2011 |
| 20110091650 | METHOD OF FORMING ORGANIC POLYMER THIN FILM AND AN APPARATUS FOR FORMING THE ORGANIC POLYMER THIN FILM - A technique for forming an organic polymer thin film on a surface of a substrate with high film formation efficiency and excellent reproducibility and stability is provided. When a vacuum deposition polymerization for forming an organic polymer thin film is performed on a surface of a substrate | 04-21-2011 |
| 20120219712 | DELIVERY DEVICE FOR DEPOSITION - A delivery device for thin-film material deposition has at least first, second, and third inlet ports for receiving a common supply for a first, a second and a third gaseous material, respectively. Each of the first, second, and third elongated emissive channels allow gaseous fluid communication with one of corresponding first, second, and third inlet ports. The delivery device can be formed from apertured plates, superposed to define a network of interconnecting supply chambers and directing channels for routing each of the gaseous materials from its corresponding inlet port to a corresponding plurality of elongated emissive channels. The delivery device comprises a diffusing channel formed by a relief pattern between facing plates. Also disclosed is a process for thin film deposition. Finally, more generally, a flow diffuser and a corresponding method of diffusing flow is disclosed. | 08-30-2012 |
| 20120219711 | METHOD FOR APPLYING LAYERS - A process for the application of layers composed of ceramic or organoceramic materials on surfaces of metals, semimetals or compounds thereof and also components or assemblies made of these materials by a chemical deposition process from the gas phase at atmospheric pressure or 30% below this and process temperatures during deposition below 500° C. The deposition process is carried out in one operation, wherein the reactive chemical substances and the precursors are homogeneously backmixed in the common gas space, and the average residence time as a ratio of volume of the gas space to gas throughput is matched to the rate-determining step of the catalyzed gas-phase reaction of the coating process so as to achieve a deposition rate of from 10 to 2000 nm per hour. | 08-30-2012 |
| 20100092668 | Concentric Showerhead For Vapor Deposition - Embodiments of the invention generally relate to a concentric gas manifold assembly used in deposition reactor or system during a vapor deposition process. In one embodiment, the manifold assembly has an upper section coupled to a middle section coupled to a lower section. The middle section contains an inlet, a manifold extending from the inlet to a passageway, and a tube extending along a central axis and containing a channel along the central axis and in fluid communication with the passageway. The lower section of the manifold assembly contains a second manifold extending from a second inlet to a second passageway and an opening concentric with the central axis. The tube extends to the opening to form a second channel between the tube and an edge of the opening. The second channel is concentric with the central axis and is in fluid communication with the second passageway. | 04-15-2010 |
| 20120219713 | PARALLEL BATCH CHEMICAL VAPOR DEPOSITION SYSTEM - Described is a parallel batch CVD system that includes a pair of linear deposition chambers in a parallel arrangement and a robotic loading module disposed between the chambers. Each chamber includes a linear arrangement of substrate receptacles, gas injectors to supply at least one gas in a uniform distribution across the substrates, and a heating module for uniformly controlling a temperature of the substrates. The robotic loading module is configured for movement in a direction parallel to a length of each of the chambers and includes at least one cassette for carrying substrates to be loaded into the substrate receptacles of the chambers. The parallel batch CVD system is suitable for high volume processing of substrates. The CVD processes performed in the chambers can be the same process. Alternatively, the CVD processes may be different and substrates processed in one chamber may be subsequently processed in the other chamber. | 08-30-2012 |
| 20100173074 | METHOD AND APPARATUS FOR MODULATION OF PRECURSOR EXPOSURE DURING A PULSED DEPOSITION PROCESS - A method of depositing material on a substrate comprises providing a reactor with a reaction chamber having a first volume, and contacting a surface of a substrate in the reaction chamber with a first precursor at the first chamber volume to react with and deposit a first layer on the substrate. The method further includes enlarging the reaction chamber to a second, larger volume and removing undeposited first precursor and any excess reaction product to end reaction of the first precursor with the substrate. | 07-08-2010 |
| 20100062158 | GAS SUPPLY METHOD AND GAS SUPPLY DEVICE - A gas supply method supplies a source gas produced by heating and sublimating a solid source material in a source material container to a consuming area. The method includes the steps of: (a) flowing a carrier gas through a processing gas supply line and measuring a gas pressure therein; (b) heating the solid source material to produce the source gas; (c) supplying a carrier gas which has the same flow rate as the carrier gas in the step (a) to the source material container and measuring a gas pressure in the processing gas supply line while flowing the source gas together with the carrier gas through the processing gas supply line; and (d) calculating the flow rate of the source gas based on the pressure measurement values obtained in the steps (a) and (c), and the flow rate of the carrier gas. | 03-11-2010 |
| 20100047450 | Chemical Vapor Deposition Reactor and Method - A reactor and method for performing chemical vapor deposition are disclosed. A chemical vapor deposition reactor can have a cylindrical chamber that comprises a cylindrical lid support and an annular gas distribution plate. Said chamber can be configured to have a horizontal laminar flow of at least one gas stream in the radial direction and a vertical downward flow of another gas stream over wafers. A large capacity of a CVD reactor with simple structures, easy maintenance and low consumption of reactants can be achieved. High uniformity, repeatability, reproducibility and consistency of depositing layers on wafers can be obtained. | 02-25-2010 |
| 20090104353 | Apparatus For Treating A Gas Stream - In a method of inhibiting the deposition of aluminium within a vacuum pump during the pumping from a process chamber of a gas stream containing an organoaluminium precursor, chlorine is supplied to the gas stream upstream of the vacuum pump to react with the precursor to form aluminium chloride, which can pass harmlessly through the pump in its vapour phase. | 04-23-2009 |
| 20120177824 | METHOD AND DEVICE FOR COATING SUBSTRATES FROM THE VAPOR PHASE - In a method for coating substrates with materials to be vaporized in a vacuum coating system, the vaporization material is deposited on the substrate by double vaporization using an intermediate carrier. The intermediate carrier is continuously moved and. | 07-12-2012 |
| 20100009080 | FLUIDIZED BED EVAPORATOR - Methods and systems for depositing a film on a substrate are disclosed. In one embodiment, a method includes converting a non-gaseous precursor into vapor phase. Converting the precursor includes: forming a fluidized bed by flowing gas at a sufficiently high flow rate to suspend and stir a plurality of solid particles, and converting the phase of the non-gaseous precursor into vapor phase in the fluidized bed. The method also includes transferring the precursor in vapor phase through a passage; and performing deposition on one or more substrates with the transferred precursor in vapor phase. | 01-14-2010 |
| 20100009079 | Method for processing substrate and substrate processing apparatus - There is provided a substrate processing method, comprising the steps of: supplying source gas into a processing chamber in which substrates are accommodated; removing the source gas and an intermediate body of the source gas remained in the processing chamber; supplying ozone into the processing chamber in a state of substantially stopping exhaust of an atmosphere in the processing chamber; and removing the ozone and the intermediate body of the ozone remained in the processing chamber; with these steps repeated multiple number of times, to thereby form an oxide film on the surface of the substrates by supplying the source gas and the ozone alternately so as not to be mixed with each other. | 01-14-2010 |
| 20100009078 | Synthesis and Use of Precursors for ALD of Tellurium and Selenium Thin Films - Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR | 01-14-2010 |
| 20090061090 | VAPOR DEPOSITION APPARATUS FOR AN ORGANIC VAPOR DEPOSITION MATERIAL AND A METHOD FOR PRODUCING AN ORGANIC FILM - A vapor deposition apparatus is provided, which does not cause changes in composition, decomposition and quality change of an organic vapor deposition material. The organic vapor deposition material is placed on a conveying unit by an amount for a single substrate, and conveyed into a vapor deposition vessel preliminarily heated. Since a small amount of the organic vapor deposition material is heated and exhausted through generation of an organic material vapor under heating condition for each substrate, neither decomposition nor quality change with moisture occurs because heating time is short. Even though different organic compounds are mixed, no change in composition occurs so that an organic vapor deposition material in which a base material is mixed with a coloring substance can be pooled in a pooling tank and then placed in the conveying unit. | 03-05-2009 |
| 20120263877 | CVD Reactor Having Gas Inlet Zones that Run in a Strip-Like Manner and a Method for Deposition of a Layer on a Substrate in a CVD Reactor of this Kind - The invention relates to a CVD reactor having a process chamber ( | 10-18-2012 |
| 20120328780 | Dual Section Module Having Shared and Unshared Mass Flow Controllers - A dual section module with mass flow controllers, for processing wafers, includes: dual process sections integrated together; at least one mass flow controller (MFC) each shared by the dual process sections and provided in a gas line branching into two gas lines, at a branching point, connected to the respective interiors of the dual process sections and arranged symmetrically between the dual process sections; and at least one mass flow controller (MFC) each unshared by the dual process sections and provided in a gas line connected to the interior of each dual process section. | 12-27-2012 |
| 20120269969 | FILM DEPOSITION METHOD AND APPARATUS - A film deposition method of depositing a thin film by alternately supplying at least a first source gas and a second source gas to a substrate is disclosed. The film deposition method includes steps of evacuating a process chamber where the substrate is accommodated, without supplying any gas to the process chamber; supplying an inert gas to the process chamber until a pressure within the process chamber becomes a predetermined pressure; supplying the first source gas to the process chamber filled with the inert gas at the predetermined pressure without evacuating the process chamber; stopping supplying the first source gas to the process chamber and evacuating the process chamber; supplying the second source gas to the process chamber; and stopping supplying the second source gas to the process chamber and evacuating the process chamber. | 10-25-2012 |
| 20100239757 | HIGH FREQUENCY PLASMA CVD APPARATUS, HIGH FREQUENCY PLASMA CVD METHOD AND SEMICONDUCTOR THIN FILM MANUFACTURING METHOD - Provided are large area and uniform VHF plasma CVD apparatus and method wherein a plasma generating source constitutes the VHF plasma CVD apparatus for manufacturing a tandem-type thin film silicon solar cell, and influences of standing waves, generation of harmful plasma other than between a pair of electrodes and supply power consumption other than between the pair of electrodes are suppressed. First and second power feed points are arranged on an electrode at positions facing each other. A distance between the power feed points is set at an integral multiple of a half of the wavelength of the using power, and a pulse power separated in terms of time is supplied. The pulse power is outputted from two phase-variable double output high frequency power supplies which can perform pulse modulation. Thus, a first standing wave wherein the anti-node position matches with positions of the first and the second power feed points, and a second standing wave wherein the node position matches with positions of the first and the second power feed points are alternately generated in terms of time. | 09-23-2010 |
| 20120321790 | ROTATION SYSTEM FOR THIN FILM FORMATION - A system for forming one or more layers of material on one or more substrates is disclosed. The system includes a susceptor that rotates around a central susceptor axis. One or more holder gears are located on the susceptor. The holder gears may rotate around the central susceptor axis with the susceptor. A central gear engaged to the holder gears may cause the holder gears to rotate around holder axes of the respective holder gears while the holder gears rotate around the central susceptor axis. The susceptor and the central gear may rotate independently. | 12-20-2012 |
| 20110293832 | Method and apparatus for depositing thin layers of polymeric para-xylylene or substituted para-xylylene - The invention relates to an apparatus and a method for depositing one or more thin layers of polymeric para-xylylene. Said apparatus comprises a heated evaporator ( | 12-01-2011 |
| 20120100292 | GAS INJECTION UNIT AND A THIN-FILM VAPOUR-DEPOSITION DEVICE AND METHOD USING THE SAME - Provided are a gas injection unit and apparatus and method for depositing a thin layer using the same. The gas injection unit includes: an inner pipe through which a reaction gas is introduced; an outer pipe enclosing the inner pipe, through which a cooling fluid cooling the reaction gas in the inner pipe flows; and injection pipes injecting the reaction gas in the inner pipe to an outside of the outer pipe. | 04-26-2012 |
| 20100203244 | High accuracy vapor generation and delivery for thin film deposition - The present invention involves injecting a liquid and gas into a vapor holding chamber held at a sufficiently high temperature to insure all the liquid injected is vaporized and held in the chamber as a vapor. The gas/vapor mixture is then delivered to the deposition chamber in which the deposition substrate is held. | 08-12-2010 |
| 20100203243 | METHOD FOR FORMING A POLYSILICON FILM - A method is provided for forming a poly-crystalline silicon film on a substrate. In one embodiment, the method comprises positioning a substrate within a processing chamber, heating the processing chamber to a deposition temperature, introducing a first silicon precursor into the processing chamber to form a buffer layer including crystal nuclei, introducing a second silicon precursor into the processing chamber to form a polysilicon film on the buffer layer, and then annealing the polysilicon film and the buffer layer. | 08-12-2010 |
| 20100166957 | PERIMETER PARTITION-VALVE WITH PROTECTED SEALS AND ASSOCIATED SMALL SIZE PROCESS CHAMBERS AND MULTIPLE CHAMBER SYSTEMS - A seal-protected perimeter partition valve apparatus defines a vacuum and pressure sealed space within a larger space confining a substrate processing chamber with optimized geometry, minimized footprint, and 360° substrate accessibility. A compact perimeter partitioned assembly with seal protected perimeter partition valve and internally contained substrate placement member further provides processing system modularity and substantially minimized system footprint. | 07-01-2010 |
| 20130011558 | PROCESS FOR PRODUCING POLYSILICON - A process for producing polysilicon, includes a) depositing polycrystalline silicon on filaments using reaction gas containing silicon-containing component (SCC) containing trichlorosilane, and hydrogen, wherein molar saturation of SCC based on hydrogen is at least 25%; b) feeding offgas from the deposition into a cooling apparatus, i) wherein condensed offgas components containing SiCl | 01-10-2013 |
| 20130022745 | SILANE BLEND FOR THIN FILM VAPOR DEPOSITION - Disclosed are non-pyrophoric mixtures of silicon compounds and solvents. Also disclosed are methods of stabilizing the pyrophoric silicon compounds (precursors). The non-pyrophoric mixtures may be used to deposit silicon-containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition. | 01-24-2013 |
