Entries |
Document | Title | Date |
20080199609 | APPARATUS AND METHOD FOR COMPENSATING UNIFORMITY OF FILM THICKNESS - An apparatus and a method for compensating uniformity of film thickness are provided. A shielding plate is provided between a vapor deposition object and a evaporation source. During the vapor deposition process, a shielding plate is continuously moved according to film deposition rates, so as to selectively pass or block atoms emitted from the evaporation source to achieve purpose of adjustably depositing. | 08-21-2008 |
20080199610 | Substrate processing apparatus, and substrate processing method - To move a substrate mounting part, on which substrates are stacked and mounted, when processing gas is supplied into a processing chamber and processing is applied to a surface of each substrate. | 08-21-2008 |
20080206462 | BATCH DEPOSITION SYSTEM USING A SUPERCRITICAL DEPOSITION PROCESS - A batch deposition chamber for use in a supercritical deposition process is divided into a plurality of compartments each adapted to receive therein a wafer. A supercritical fluid is introduced into the compartments at the same flow rate via respective feed tubes for depositing a film on the wafers. Each of the ambient temperature and the surface temperature of the wafers is controlled at the same temperature among all the wafers by using temperature sensors provided for the respective wafers and a temperature controller. | 08-28-2008 |
20080220164 | Feed device for a precursor - In order to allow feeding for supply of a gaseous precursor for further processing while avoiding condensation, and in order to allow the feed process to be carried out as simply and reliably as possible, the invention provides a feed method as well as a feed device ( | 09-11-2008 |
20080233284 | Bottom-Up Electrospinning Devices, and Nanofibers Prepared by Using the Same - A conventional electrospinning devices is problematic in that it is unable to mass-produce a nanofiber web and the quality of a produced nanofiber web is poor. To solve the above problem, the present invention provides a bottom-up electrospinning devices, wherein [I] the outlets of nozzles | 09-25-2008 |
20080233285 | Methods of forming SIC MOSFETs with high inversion layer mobility - Methods of forming an oxide layer on silicon carbide include thermally growing an oxide layer on a layer of silicon carbide, and annealing the oxide layer in an environment containing NO at a temperature greater than 1175° C. The oxide layer may be annealed in NO in a silicon carbide tube that may be coated with silicon carbide. To form the oxide layer, a preliminary oxide layer may be thermally grown on a silicon carbide layer in dry O | 09-25-2008 |
20080241377 | VAPOR DEPOSITION SYSTEM AND METHOD OF OPERATING - A method and system for depositing a thin film on a substrate using a vapor deposition process is described. The processing system comprises a process chamber having a pumping system configured to evacuate the process chamber, a substrate holder coupled to the process chamber and configured to support the substrate, and a gas distribution system coupled to the process chamber and configured to introduce a film forming composition to a process space in the vicinity of a surface of the substrate. Furthermore, a heat source is coupled to the gas distribution system, wherein the heat source comprises one or more heating elements coupled to a power source, and wherein the one or more heating elements are disposed on an interior surface of the gas distribution system or embedded within the gas distribution system or both, and configured to interact with the firm forming composition and cause pyrolysis of one or more constituents of the film forming composition when heated. | 10-02-2008 |
20080241378 | Device and Method for Treating the Surfaces of Substrates - The invention relates to a device for treating the surfaces of silicon wafers, comprising transport rollers for transporting the silicon wafer, and at least one conveyor device which wets the surface of the silicon wafer with an aqueous medium on a transport plane which is determined by the transport rollers. The conveyor device is configured such that it can apply the process medium to the surface of the silicon wafer, which is oriented in a downward manner and which is arranged on the transport plane. Several suction pipes for suctioning gaseous or mist-like distributed process mediums from the area surrounding the conveyor device are provided. The suction pipes are arranged in the vertical direction below the transport plane. | 10-02-2008 |
20080254216 | Metal Complex Compound Comprising B-Diketonato Ligand - [PROBLEMS] To provide a metal complex compound capable of being suitably used for manufacturing a metal-containing thin film by the CVD method and a method for preparing a metal-containing thin film. | 10-16-2008 |
20080254217 | FINE CONTROL OF VAPORIZED ORGANIC MATERIAL - A method for vaporizing organic components and delivering the vapor through opening(s) in a manifold to a substrate surface spaced from the manifold to form a film composed of at least two organic components, comprising: delivering a first quantity of a single first organic component into a vaporization device where the component is vaporized and delivered at a first predetermined rate to the manifold; delivering into a transport apparatus a quantity of a mixture of organic components in a predetermined ratio that includes the first organic component; the transport apparatus delivering the mixture of organic components at a second predetermined rate to a flash heating region wherein the mixture is vaporized and delivered to the manifold; and mixing the organic components in the manifold, which permits the mixed vaporized components to be deposited through the opening(s) onto the substrate surface to form the film. | 10-16-2008 |
20080254218 | Metal Precursor Solutions For Chemical Vapor Deposition - Metal source containing precursor liquid solutions for chemical vapor deposition processes, including atomic layer deposition, for fabricating conformal metal-containing films on substrates are described. More specifically, the metal source precursor liquid solutions are comprised of (i) at least one metal complex selected from β-diketonates, β-ketoiminates, β-diiminates, alkyl metal, metal carbonyl, alkyl metal carbonyl, aryl metal, aryl metal carbonyl, cyclopentadienyl metal, cyclopentadienyl metal isonitrile, cyclopentadienyl metal nitrile, cyclopentadienyl metal carbonyl, metal alkoxide, metal ether alkoxide, and metal amides wherein the ligand can be monodentate, bidentate and multidentate coordinating to the metal atom and the metal is selected from group 2 to 14 elements, and (ii) a solvent selected from organic amides including linear amides and cyclic amides for such metal source containing precursors. | 10-16-2008 |
20080260946 | CLEAN METHOD FOR VAPOR DEPOSITION PROCESS - A method for cleaning a reaction chamber having a pedestal and a carrier ring is provided. First, the pedestal and the carrier ring are cleaned with a high pressure gas. Next, the carrier ring is moved to leave the pedestal, and a low pressure gas is provided to clean the pedestal, the carrier ring, and an area lay between the pedestal and the carrier ring. Thereafter, a full flush is performed to clean the pedestal and the carrier ring. | 10-23-2008 |
20080274276 | SYSTEM FOR CONTROLLING THE SUBLIMATION OF REACTANTS - An apparatus and method improves heating of a solid precursor inside a sublimation vessel. In one embodiment, inert, thermally conductive elements are interspersed among units of solid precursor. For example the thermally conductive elements can comprise a powder, beads, rods, fibers, etc. In one arrangement, microwave energy can directly heat the thermally conductive elements. | 11-06-2008 |
20080286461 | VACUUM EVAPORATION METHOD - The vacuum evaporation method provides a heating element between an evaporation source of a film-forming material and a substrate; and forms a phosphor layer of an alkali halide-based phosphor on a surface of said substrate by vacuum evaporation while causing the heating element to generate heat at a temperature t (° C.) satisfying Formula (1): | 11-20-2008 |
20080311294 | VAPOR-PHASE GROWTH APPARATUS AND VAPOR-PHASE GROWTH METHOD - There is provided a vapor-phase growth apparatus which reduces particle generation and an adhering material in epitaxial growth to make it easy to improve the productivity. The vapor-phase growth apparatus includes a gas supply port formed in a top portion of a reactor, a gas distribution plate arranged in the reactor, a discharge port formed in a bottom portion of the reactor, at a head portion and which covers a side wall of the reactor, an annular holder on which a semiconductor wafer is placed. A separation distance between the gas distribution plate and the annular holder is set such that a film forming gas which flows downward from the gas supply port through the gas distribution plate is in a laminar flow state on a surface of the semiconductor wafer or a surface of the annular holder. | 12-18-2008 |
20080311295 | Film deposition processing apparatus and film deposition processing method - A film deposition processing apparatus and a film deposition method for forming a uniform film on a surface of a fine structure formed on a wafer using a supercritical fluid as a medium are provided. Film deposition is performed using a film deposition processing apparatus, comprising: a film deposition processing chamber; a holder which holds the wafer on a top surface inside the film deposition processing chamber; a heater which heats the wafer held on the top surface inside the film deposition processing chamber and is embedded in an upper portion of the film deposition processing chamber; a stirrer which stirs an inside of the film deposition processing chamber; a mixer which prepares a precursor solution made by dissolving at least one of precursors in the supercritical fluid; and a precursor solution inlet which introduces the precursor solution inside the film deposition processing chamber. | 12-18-2008 |
20090004383 | PROCESS FOR FORMING THE STRONTIUM-CONTAINING THIN FILM - The present invention provides a process for forming a strontium-containing thin film of a cyclopentadienyl-based strontium compound, which is in the liquid state at room temperature to 50° C., can be purified by distillation, present as a monomer, has high vapor pressure, and suitable for mass production. bis(propyltetramethylcyclopentadienyl)strontium is used as an Sr source to form a strontium-containing thin film such as a SrTiO | 01-01-2009 |
20090004384 | Processing Assembly and Method for Processing a Wafer in Such a Processing Assembly - Processing assembly comprising a processing chamber ( | 01-01-2009 |
20090017206 | METHODS AND APPARATUS FOR REDUCING THE CONSUMPTION OF REAGENTS IN ELECTRONIC DEVICE MANUFACTURING PROCESSES - A substrate coating system is provided which includes a substrate coating chamber; a gas box connected to the coating chamber and adapted to provide reagent gases to the coating chamber; and a reagent reclaim system connected to the substrate coating chamber and the gas box, wherein the reagent reclaim system includes a wet scrubber connected to the coating chamber; a polisher connected to the wet scrubber; and a dryer connected to the polisher and the gas box. | 01-15-2009 |
20090029046 | SUBSTRATE PROCESSING APPARATUS, METHOD FOR PROCESSING SUBSTRATE, AND STORAGE MEDIUM - Processing gas is supplied from the central upper part of a processing chamber to a wafer on a mounting board, while the processing chamber is exhausted from processing gas exhaust passages at areas outside of the wafer. In addition, purge gas is supplied from purge gas supply passages to a buffer chamber formed between the peripheral part or a container main body and that of a cover body. The supplied flow-rate of the processing gas is made less than the exhaust flow-rate in the processing gas exhaust passages. Accordingly, the purge gas in the buffer chamber is drawn into the processing chamber via a purge gas supply hole formed of a gap between the container main body and the cover body due to a negative pressure inside the processing chamber caused by a difference between the flow rates. | 01-29-2009 |
20090035461 | Pulse Heating Methods and Apparatus for Printing and Dyeing - The present invention provides apparatus, systems and methods in which a pulse heater is used to apply dyes to a receiver in a rotary heating processing equipment. The pulse heater is first applied to a belt and is then removed from the belt, creating a dissipating heat. A sandwiched receiver comprising of two dyed donor papers is then subjected to the dissipating heat off the belt and also subjected to a constant heat generated from a drum to cause a phase change of the dyes within the donor papers to phase change from a solid to a gas, so the receiver can absorb and capture the phase changed dyes for a more saturated and brilliant finish. | 02-05-2009 |
20090047426 | DEPOSITION APPARATUS - A deposition apparatus for depositing a thin film on a substrate according to an embodiment of the present invention includes a substrate support, a reaction chamber wall formed above the substrate support and defining a reaction chamber, a gas inflow tube having a plurality of gas inlets connected to respective process gas sources and communicating with the reaction chamber, a volume adjusting horn for supplying a process gas to the reaction chamber, which defines a reaction space together with the substrate support, a micro-feeding tube assembly disposed between the gas inflow tube and the volume adjusting horn and having a plurality of fine tubules, and a helical flow inducing plate disposed between the micro-feeding tube assembly and the volume adjusting horn, and the process gas passing through the volume adjusting horn is directly supplied to the substrate without passing any other device. The process gases may be supplied to the substrate quickly and uniformly without any downstream gas dispersion device, such as a showerhead. | 02-19-2009 |
20090047427 | Ultrahigh vacuum process for the deposition of nanotubes and nanowires - A system and method A method of growing an elongate nanoelement from a growth surface includes:
| 02-19-2009 |
20090053413 | Method of Densifying Porous Articles - The present invention describes a method of CVI densification in which particular arrangements and mixtures of undensified porous substrates and partially densified porous substrates are arranged in particular ways in order to use the thermal characteristics of the partially densified porous substrates to better distribute heat throughout a CVI furnace and thereby improve densification. | 02-26-2009 |
20090061083 | VAPOR BASED COMBINATORIAL PROCESSING - A combinatorial processing chamber and method are provided. In the method a fluid volume flows over a surface of a substrate with differing portions of the fluid volume having different constituent components to concurrently expose segregated regions of the substrate to a mixture of the constituent components that differ from constituent components to which adjacent regions are exposed. Differently processed segregated regions are generated through the multiple flowings. | 03-05-2009 |
20090061084 | VAPOR DEPOSITION SYSTEM AND VAPOR DEPOSITION METHOD - In a vapor deposition method of forming a film of an organic compound on a substrate, a material containing portion filled with a vapor deposition material is heated, to thereby evaporate or sublimate the vapor deposition material and discharge the vapor deposition material to a film formation space of a vacuum chamber through a plurality of pipings connected to the material containing portion, and a piping having a smaller conductance among the pipings having different conductances is provided with a flow rate adjusting mechanism for controlling an amount of the vapor deposition material released into the vacuum chamber, whereby a film formation speed can be adjusted finely. | 03-05-2009 |
20090068355 | DEVICE AND METHOD FOR FABRICATING THIN FILMS BY REACTIVE EVAPORATION - A device for fabricating thin films on a substrate includes a vacuum chamber, a rotatable platen configured to hold one or more substrates within the vacuum chamber, and a housing disposed within the vacuum chamber. The housing contains a heating element and is configured to enclose an upper surface of the platen and a lower portion configured to partially enclose an underside surface of the platen which forms a reaction zone. A heated evaporation cell is operatively coupled to the lower portion of the housing and configured to deliver a pressurized metallic reactant to the reaction zone. The device includes a deposition zone disposed in the vacuum chamber and isolated from the reaction zone and is configured to deposit a deposition species to the exposed underside of the substrates when the substrates are not contained in the reaction zone. | 03-12-2009 |
20090068356 | HIGH PRODUCTIVITY PLASMA PROCESSING CHAMBER - Embodiments of the present invention are generally directed to apparatus and methods for a plasma-processing chamber requiring less maintenance and downtime and possessing improved reliability over the prior art. In one embodiment, the apparatus includes a substrate support resting on a ceramic shaft, an inner shaft allowing for electrical connections to the substrate support at atmospheric pressure, an aluminum substrate support resting on but not fixed to a ceramic support structure, sapphire rest points swaged into the substrate support, and a heating element inside the substrate support arranged in an Archimedes spiral to reduce warping of the substrate support and to increase its lifetime. Methods include increasing time between in-situ cleans of the chamber by reducing particle generation from chamber surfaces. Reduced particle generation occurs via temperature control of chamber components and pressurization of non-processing regions of the chamber relative to the processing region with a purge gas. | 03-12-2009 |
20090081364 | Evaporation apparatus - An evaporation apparatus is capable of preventing a sag phenomenon in a substrate. The evaporation apparatus includes a substrate supporting unit. The substrate supporting unit includes a substrate supporter for supporting side walls of a substrate in a chamber toward the same direction as an intake direction of the substrate entering the chamber; and a substrate-aiding supporter for supporting other side walls of the substrate that are not supported by the substrate supporter. | 03-26-2009 |
20090087560 | EPITAXIAL GROWTH FILM FORMATION METHOD - An epitaxial growth film formation method allowing to adequately prevent the sticking phenomenon spreading over both a wafer and a susceptor when a horizontal disc-like susceptor is used to form an epitaxial growth film is provided. The epitaxial growth film formation method is a method of forming a vapor growth film on the wafer by placing the wafer having a diameter smaller than that of the susceptor approximately horizontally in substantially a center section on the horizontal disc-like susceptor, wherein the vapor growth film is formed on the wafer by bringing a circumferential recess step adjacent to a bottom inside from an edge part of the wafer and a convex step provided on a circumference of an upper surface inside from the edge part of the susceptor into contact. | 04-02-2009 |
20090104350 | NOZZLE DEVICE, FILM FORMING APPARATUS AND METHOD USING THE SAME, INORGANIC ELECTROLUMINESCENCE DEVICE, INKJET HEAD, AND ULTRASONIC TRANSDUCER ARRAY - A film forming apparatus by which uniform and large area films can be formed according to the AD method. The film forming apparatus includes: a film forming chamber; a substrate holder located in the film forming chamber, for holding a substrate on which a structure is to be formed; an exhaust pump for exhausting an interior of the film forming chamber; an aerosol generating unit for generating an aerosol by blowing up a raw material powder placed in a container with a gas; a carrier pipe for introducing the generated aerosol into the film forming chamber; a nozzle for spraying the aerosol introduced via the carrier pipe toward the substrate; and a control unit for chaotically changing a relative position of the substrate held by the substrate holder and the nozzle. | 04-23-2009 |
20090104351 | FILM FORMING APPARATUS AND METHOD, GAS SUPPLY DEVICE AND STORAGE MEDIUM - A film forming apparatus is provided with a chamber which defines a processing space for performing a film forming process to a substrate a stage arranged in the chamber for mounting the substrate thereon; a substrate heating unit arranged on the stage for heating the substrate; a shower head which is arranged to face the stage and has many gas injecting holes; a gas supply unit for supplying cooling unit arranged above the shower head for cooling the shower head; and a shower head heating unit arranged above the cooling unit for heating the shower head through the cooling unit. | 04-23-2009 |
20090110823 | Film-forming material and method for predicting film-forming material - Disclosed is a method for prediction of a film material such as a raw material for organic EL. In the method, a film material having an evaporation rate (V(%)) represented by the formula below can be predicted based on the values of the constant (Ko) and the activation energy (Ea). V=(Ko/P)×e | 04-30-2009 |
20090110824 | Substrate processing apparatus and method of controlling substrate processing apparatus - In accordance with a set temperature profile including: a first step in which a temperature is varied from a first temperature to a second temperature during a first time period; a second step in which the temperature is maintained at the second temperature during a second time period; and a third step in which the temperature is varied from the second temperature to a third temperature; a substrate is subjected to a film deposition process. The first temperature, the second temperature, and the third temperature are determined based on the first relationship between temperature and film thickness, the measured film thicknesses at the plurality of positions, and a predetermined target film thickness. There are calculated expected film thicknesses at a plurality of positions on a substrate to be actually processed in accordance with the set temperature profile corresponding to the determined first temperature, the determined second temperature, and the determined third temperature. When the expected film thicknesses at the plurality of positions are not within a predetermined allowable range with respect to the predetermined target film thickness, at least one of the first time period, the second time period, and the third time period is varied. | 04-30-2009 |
20090117270 | METHOD FOR TREATING SUBSTRATE AND RECORDING MEDIUM - A method for processing a substrate includes a film forming step of supplying a film forming gas into the processing chamber to form a film on the substrate, a cleaning step of supplying a plasma-exited cleaning gas into the processing chamber after the film forming step to clean the inside of the processing chamber, and a coating step of forming a coating within the processing chamber after the cleaning step. The cleaning step includes a high pressure cleaning of regulating the pressure in the processing chamber so that cleaning is mainly performed by molecules formed by recombining radicals in the cleaning gas, and the coating step includes a low temperature film forming step of forming the coating film under the condition that the temperature of a substrate supporting table is set lower than that in the film formation on the substrate during the film formation step. | 05-07-2009 |
20090136663 | VACUUM VAPOR DEPOSITION APPARATUS AND METHOD, AND VAPOR DEPOSITED ARTICLE FORMED THEREWITH - When the ratio of a guest material to a host material is extremely small, it is difficult to maintain, with good accuracy, the ratio of the guest material to be vapor-deposited on the work surface and the distribution state of the guest material. The vacuum vapor deposition apparatus and method includes providing a shielding member, positioned between a first vapor deposition source and a substrate to be coated so that the vapor deposition amount of the guest material on the substrate surface is significantly less than the vapor deposition amount of the host material. A shielding member drive mechanism rotates the shielding member about a first axis while rotating the shielding member about a second axis, which is spaced from and parallel to the first axis. | 05-28-2009 |
20090142489 | LINEAR DEPOSITION SOURCES FOR DEPOSITION PROCESSES - Linear deposition sources are disclosed. In one embodiment, the linear deposition source includes a container accommodating evaporation material and a heater configured to generate heat energy such that vaporized material is discharged uniformly onto a substrate on which a deposition layer is formed. The heater is provided on the container, wherein a portion of the heater positioned at a center portion of the container in the longitudinal direction generates more heat energy than the other portion of the heater. The heater includes a coil configured in a sinusoidal pattern, wherein the curvature pitch or height of the portion of the coil positioned at the center portion of the container in the longitudinal direction is set to be different from that of the other portion of the coil. Further, the resistance of the portion of the coil positioned at the center portion of the container in the longitudinal direction may be set to be greater than that of the other portion of the coil. | 06-04-2009 |
20090142490 | FILM FORMING METHOD AND FILM FORMING APPARATUS - In a method of forming on a substrate a film of a substance by depositing the substance vaporized from an evaporation source on the substrate in an oblique direction, a deposition rate of the substance is changed depending on a position on the substrate so that the deposition rate of the substance is higher at the position in which the deposition angle is larger. | 06-04-2009 |
20090176016 | VAPORIZATION APPARATUS WITH PRECISE POWDER METERING - Apparatus for vaporizing a particulate material, comprising a metering apparatus including: a reservoir; a housing having an internal volume and first and second openings for respectively receiving and discharging the particulate material; a rotatable shaft disposed in the internal volume, the shaft having a smooth surface and a circumferential groove for receiving particulate material from the reservoir and for discharging the particulate material; the rotatable shaft and the internal volume cooperating such that the particulate material is transported by the circumferential groove and not along the remainder of the rotatable shaft; a scraper disposed in relation to the second opening, having at its end substantially the same cross section as the groove in the rotating shaft, the scraper cooperating with the groove to dislodge particulate material retained therein, and in response to the shaft rotating, delivers metered amounts of particulate material through the second opening; to the flash evaporator. | 07-09-2009 |
20090181168 | SOLID PRECURSOR SUBLIMATOR - An apparatus and method for holding a solid precursor in a sublimator such that the solid precursor can be vaporized for saturating a carrier gas. The apparatus may include alternating disks or shelves that form inner and outer passages, as well as spaces between the disks for fluidicly coupling the passages to create a winding, tortuous fluid flow path through the sublimator for optimizing solid vapor saturation. The method may include directing a carrier gas into a sublimation chamber, around the first shelf in the outer passage, over the first shelf in the space, around the second shelf in the inner passage, and back out of the sublimation chamber. | 07-16-2009 |
20090191336 | METHOD AND APPARATUS FOR SIMPIFIED STARTUP OF CHEMICAL VAPOR DEPOSITION OF POLYSILICON - A simplified startup CVD technique for Siemens type of reactors is disclosed. In one embodiment, a method for production of bulk polysilicon in a CVD reactor assembly includes evacuating stainless steel envelope to have substantially low oxygen content, applying radiant heat (e.g., using a heating element coated with silicon) to the stainless steel enclosure sufficient for raising silicon rods to a firing temperature, flowing process gas (H | 07-30-2009 |
20090191337 | GAS SUPPLY SYSTEM, SUBSTRATE PROCESSING APPARATUS AND GAS SUPPLY METHOD - Prior to wafer processing, pressure ratio control is executed on a divided flow rate adjustment means so as to adjust the flow rates of divided flows to achieve a target pressure ratio with regard to the pressures in the individual branch passages. As the processing gas from a processing gas supply means is diverted into first and second branch pipings under the pressure ratio control and the pressures in the branch passages then stabilize, the control on the divided flow rate adjustment means is switched to steady pressure control for adjusting the flow rates of the divided flows so as to hold the pressure in the first branch passage at the level achieved in the stable pressure condition. Only after the control is switched to the steady pressure control, an additional gas is delivered into the second branch passage via an additional gas supply means. | 07-30-2009 |
20090202720 | Film Forming and Cleaning Method - A film forming and cleaning method according to the present invention comprises a temperature adjusting step performed between a film forming step and a cleaning step. In the film forming step, a process gas is supplied into a process vessel ( | 08-13-2009 |
20090208649 | Vacuum Pumping System - A vacuum pumping system comprises a primary foreline for receiving a gas stream from an outlet of a chamber, a first vacuum pump for evacuating the chamber, a second vacuum pump for evacuating the chamber, a first secondary foreline for conveying gas from the primary foreline to the first vacuum pump, a second secondary foreline for conveying gas from the primary foreline to the second vacuum pump, and valve means for selectively connecting a chosen one of the first and second secondary forelines to the primary foreline. The condition of the vacuum pumps is monitored during use. When both vacuum pumps are operating normally, the valve means is controlled to divert a first reactant-rich gas from the primary foreline into the first secondary foreline, and to divert a second reactant-rich gas from the primary foreline to the second secondary foreline, thereby inhibiting mixing of the first and second reactants within the vacuum pumps. However, in the event that the condition of one of the vacuum pumps indicates that one of the pumps is likely to fail during a current process within the chamber, the valve means is controlled to divert both the first reactant-rich gas and the second reactant-rich gas to the other vacuum pump, thereby preventing the potentially costly loss of a batch of substrates within the chamber. | 08-20-2009 |
20090214777 | MULTIPLE AMPOULE DELIVERY SYSTEMS - This invention relates to an integrated vapor or liquid phase reagent dispensing apparatus having a plurality of vessels and a plurality of carrier or inert gas feed/vapor or liquid phase reagent delivery manifolds, that may be used for continuously dispensing vapor or liquid phase reagents such as precursors for deposition of materials in the manufacture of semiconductor materials and devices. | 08-27-2009 |
20090214778 | MULTIPLE AMPOULE DELIVERY SYSTEMS - This invention relates to an integrated vapor or liquid phase reagent dispensing apparatus having a plurality of vessels and a plurality of carrier or inert gas feed/vapor or liquid phase reagent delivery manifolds, that may be used for continuously dispensing vapor or liquid phase reagents such as precursors for deposition of materials in the manufacture of semiconductor materials and devices. | 08-27-2009 |
20090214779 | MULTIPLE AMPOULE DELIVERY SYSTEMS - This invention relates to an integrated vapor or liquid phase reagent dispensing apparatus having a plurality of vessels and a plurality of carrier or inert gas feed/vapor or liquid phase reagent delivery manifolds, that may be used for continuously dispensing vapor or liquid phase reagents such as precursors for deposition of materials in the manufacture of semiconductor materials and devices. | 08-27-2009 |
20090214780 | Negative Coefficient of Thermal Expansion Particles and Method of Forming the Same - A negative coefficient of thermal expansion particle includes a first bilayer having a first bilayer inner layer and a first bilayer outer layer, and a second bilayer having a second bilayer inner layer and a second bilayer outer layer. The first and second bilayers are joined together along perimeters of the first and second bilayer outer layers and first and second bilayer inner layers, respectively. The first bilayer inner layer and the second bilayer inner layer are made of a first material and the first bilayer outer layer and the second bilayer outer layer are made of a second material. The first material has a greater coefficient of thermal expansion than that of the second material. | 08-27-2009 |
20090220691 | Evaporation apparatus and thin film forming method using the same - Provided are an evaporation apparatus and a thin film forming method using the same. The evaporation apparatus and the thin film forming method are used to form a uniform thin film, even for a large substrate, and can be easily employed without changing equipment even if a substrate size is changed. The evaporation apparatus includes a first evaporation source, a second evaporation source separated from the first evaporation source, and a compensation member disposed between a target object and the first and second evaporation sources. The compensation member performs a linear movement simultaneously with the first and second evaporation sources. The compensation member includes a first compensation plate disposed in a position corresponding to the first evaporation source, and a second compensation plate disposed in a position corresponding to the second evaporation source. | 09-03-2009 |
20090232983 | SUBSTRATE TEMPERATURE CONTROL FOR COMBUSTION CHEMICAL VAPOR DEPOSITION - Method for depositing film on flexible (plastic/metal) foil and/or temperature sensitive substrates ( | 09-17-2009 |
20090246370 | Method to Produce Tone-Controlled Colors in Colorless Crystals - The embodiments of present invention provide method for imparting tone-controlled colors into colorless crystals such as gemstones or decorative objects by coating a atomically mixed thin film comprising of a color causing reagent and a toner material onto the surface of colorless gemstones or transparent crystals and subjecting them to a heat treatment to produce colors of desired shades in the crystals. The method employed is radiation-free, eco-friendly and avoid the use of any hazardous material. The method highlights that controlling the amount of toner material could easily control the shade of color induced by the colorant material. The coating of atomically mixed single film onto the surface of crystals results in reduction of diffusion time significantly at a reasonable temperature, to impart colors to crystals such as gemstones and colorless decorative objects. | 10-01-2009 |
20090246371 | METHOD OF FORMING THIN LAYERS BY A THERMALLY ACTIVATED PROCESS USING A TEMPERATURE GRADIENT ACROSS THE SUBSTRATE - A thermally activated batch process is disclosed for forming thin material layers in semiconductor devices including the establishment of an overheating temperature profile prior to actually forming a material layer, for instance, by deposition, so that a gas depletion at the centre of the substrate during the deposition process be compensated for. Thus, enhanced thickness uniformity for thin material layers in the range of 1 to 50 nanometers may be obtained without additional process time or even at a reduced process time. | 10-01-2009 |
20090252872 | METHOD AND DEVICE TO PREVENT COATING A DOVETAIL OF A TURBINE AIRFOIL - A method and masking assembly for masking a dovetail portion of a turbine blade during coating of an airfoil portion of the blade. The masking assembly comprises at least two masking members, each having an exterior surface and an oppositely-disposed undulatory surface complementary to one of oppositely-disposed undulatory surfaces of the dovetail portion. By mating the masking members, the undulatory surfaces thereof define an interior cavity within the masking assembly that accommodates the dovetail portion, and the undulatory surfaces of the masking members contact the undulatory surfaces of the dovetail portion to entrap the dovetail portion within the interior cavity of the masking assembly. | 10-08-2009 |
20090252873 | APPARATUS AND METHOD FOR TREATING MATERIALS WITH COMPOSITIONS - An apparatus and method for treating subject materials with compositions includes a material treatment section for treating a subject material with a composition of a silane-containing material and a hydrocarbon solvent to form a treated material, and a neutralizing section for neutralizing the treated material such that the treated material has a pH in a range of approximately 7 to approximately 8. | 10-08-2009 |
20090263578 | Apparatus and methods for deposition reactors - An apparatus, such as an ALD (Atomic Layer Deposition) apparatus, including a precursor source configured for depositing material on a heated substrate in a deposition reactor by sequential self-saturating surface reactions. The apparatus includes an in-feed line for feeding precursor vapor from the precursor source to a reaction chamber and a structure configured for utilizing heat from a reaction chamber heater for preventing condensation of precursor vapor into liquid or solid phase between the precursor source and the reaction chamber. Also various other apparatus and methods are presented. | 10-22-2009 |
20090291207 | GAS-PURGED VACUUM VALVE - A vacuum valve assembly for use in a vacuum processing chamber includes a seat defining an opening in the vacuum valve, with the seat having a sealing face adjacent the opening and normal to the direction of the opening; and a gate having a sealing face adapted to mate with the seat sealing face, the gate being movable toward and away from the seat sealing face to seal and open the vacuum valve opening. A continuous elastomeric seal extends around the vacuum valve opening between the gate sealing face and the seat sealing face of sufficient size such that when the gate is positioned to seal the vacuum valve opening, there exists a gap between the gate sealing face and the seat sealing face. A purge gas port system, disposed in the seat or in the gate, has an inlet for a purge gas, an essentially continuous outlet extending around the vacuum valve opening and adjacent the elastomeric seal and gap, and a manifold system connecting the inlet and the outlet. When a purge gas is introduced through the inlet, the manifold distributes the gas to the outlet which evenly distributes the gas to the vicinity of the continuous elastomeric seal around the vacuum valve opening in the gap between the gate sealing face and the seat sealing face. | 11-26-2009 |
20090297706 | FILM FORMING SYSTEM AND METHOD FOR FORMING FILM - An obstruct of this invention is to make it possible to form a metal-oxide film or a metal-nitride film having less oxygen deficit at a high deposition rate with improved repeatability and to downsize a film forming system as well. | 12-03-2009 |
20090317547 | CHEMICAL VAPOR DEPOSITION SYSTEMS AND METHODS FOR COATING A SUBSTRATE - Chemical vapor deposition systems and methods of coating a substrate are provided. The method includes evacuating a processing chamber to a threshold pressure. The substrate and the processing chamber are heated to a first processing temperature. A first pellet having a vaporization temperature that is below the first processing temperature is dispensed into the processing chamber and exposed to the first processing temperature within the processing chamber to vaporize the first pellet into a first processing vapor to produce a pressure change from the threshold pressure to a first pressure to cause the first processing vapor to flow through the processing chamber and onto the substrate. The substrate is exposed to the first processing vapor for a predetermined time. | 12-24-2009 |
20090317548 | GAS TURBINE COMPONENT WITH A THERMAL BARRIER COATING, THERMAL BARRIER COATING FOR A GAS TURBINE COMPONENT AND PROCESS FOR PRODUCING A THERMAL BARRIER COATING ON A GAS TURBINE COMPONENT - A gas turbine component of an aircraft engine having a base body, which comprises at least a first material, and a thermal barrier coating that is applied to the base body and consists of or includes an oxide ceramic, is disclosed. Micro-defects and/or nano-defects are included in the oxide ceramic in order to reduce the thermal conductivity of the thermal barrier coating. | 12-24-2009 |
20100003404 | ALD METHOD AND APPARATUS - A method and an apparatus for executing efficient and cost-effective Atomic Layer Deposition (ALD) at low temperatures are presented. ALD films such as oxides and nitrides are produced at low temperatures under controllable and mild oxidizing conditions over substrates and devices that are moisture- and oxygen-sensitive. ALD films, such as oxides, nitrides, semiconductors and metals, are efficiently and cost-effectively deposited from conventional metal precursors and activated nonmetal sources. Additionally, substrate preparation methods for optimized ALD are disclosed. | 01-07-2010 |
20100015333 | SPRAY COATING PROCESS WITH REDUCED GAS TURBULENCE - A spray coating apparatus in which gas turbulence is reduced to provide a better controlled spray coating process. The spray coating apparatus comprises a coating chamber, a spray nozzle, and an article holder for holding the article to be coated. Waste gaseous materials generated during the spray coating are extracted through an extraction port on the coating chamber. The amount of extraneous gas flow entering the coating chamber is limited to reduce the amount of gas turbulence in the coating chamber. Also disclosed is a method of spray coating with reduced gas turbulence. | 01-21-2010 |
20100028533 | Methods and Devices for Processing a Precursor Layer in a Group VIA Environment - Methods and devices for high-throughput printing of a precursor material for forming a film of a group IB-IIIA-chalcogenide compound are disclosed. In one embodiment, the method comprises forming a precursor layer on a substrate, the precursor is subsequently processed in one or more steps in a VIA environment. | 02-04-2010 |
20100028534 | EVAPORATION UNIT, EVAPORATION METHOD, CONTROLLER FOR EVAPORATION UNIT AND THE FILM FORMING APPARATUS - In order to increase temperature controllability of a material container, an evaporation unit for forming a film includes a material supply mechanism having a material container, an outer case having a hollow interior in which the material supply mechanism is detachably secured, an internal heater provided in the material supply mechanism and heating the material supply mechanism, and a transfer path which is formed by securing the material supply mechanism to the outer case and which transfers the film forming material vaporized by heating the inner heater. | 02-04-2010 |
20100040780 | Large volume evaporation source - A containment vessel for evaporating materials for use in applying film coatings to a substrate includes a body fabricated from a refractory material. In one embodiment the body includes end portions capable of being connected to other bodies in an end to end fashion. In another embodiment, the body includes an integral patterned conductor incorporated into the outer surface portion of the body to facilitate association with an electrical power source for heating. | 02-18-2010 |
20100047447 | MULTIPLE SUBSTRATE ITEM HOLDER AND REACTOR - Methods, apparatuses and systems are provided that may be used in performing controlled environment processes on substrate items within in at least one chamber A plurality of substrate items may be arranged at each of a plurality of horizontal levels within a vertically oriented stack of a substrate item holding assembly and moved into a reactor chamber and/or other like chamber and processed. | 02-25-2010 |
20100047448 | FILM FORMING APPARATUS AND METHOD - A film forming apparatus includes a processing chamber inside which a vacuum space is maintained and to which a film forming gas is supplied, a substrate supporting unit which is disposed inside the processing chamber and supports a substrate, and a heater which is made of a compound material comprising a high-melting point metal and carbon, is disposed inside the processing chamber, and heats the substrate. | 02-25-2010 |
20100075033 | Localized Linear Microwave Source Array Pumping to Control Localized Partial Pressure in Flat and 3 Dimensional PECVD Coatings - A system and method for controlling deposition of thin films on substrates. One embodiment includes a vacuum chamber; a plurality of sources located inside the vacuum chamber; and a plurality of gas tubes, each of the plurality of gas tubes comprising a first volume for delivering precursor gas and a second volume for providing pumping. | 03-25-2010 |
20100075034 | Controlled deposition of silicon-containing coatings adhered by an oxide layer - We have developed an improved vapor-phase deposition method and apparatus for the application of films/coatings on substrates. The method provides for the addition of a precise amount of each of the reactants to be consumed in a single reaction step of the coating formation process. In addition to the control over the amount of reactants added to the process chamber, the present invention requires precise control over the total pressure (which is less than atmospheric pressure) in the process chamber, the partial vapor pressure of each vaporous component present in the process chamber, the substrate temperature, and typically the temperature of a major processing surface within said process chamber. Control over this combination of variables determines a number of the characteristics of a film/coating or multi-layered film/coating formed using the method. By varying these process parameters, the roughness and the thickness of the films/coatings produced can be controlled. | 03-25-2010 |
20100086681 | CONTROL DEVICE OF EVAPORATING APPARATUS AND CONTROL METHOD OF EVAPORATING APPARATUS - Provided is a control device of an evaporating apparatus performing a film forming process on a substrate with a film forming material evaporated from a vapor deposition source, and a storage of the control device stores a plurality of tables each showing a relationship between a deposition rate and a flow rate of a carrier gas. A table selection unit selects a desired table from the plurality of tables stored in the storage based on a processing condition. A deposition controller calculates a deposition rate based on a signal outputted from a QCM. A carrier gas controller controls the flow rate of the carrier gas to obtain a desired deposition rate based on a difference between a target deposition rate and the deposition rate obtained by the deposition controller, with reference to data indicating the relationship between the deposition rate and the flow rate of the carrier gas. | 04-08-2010 |
20100092665 | EVAPORATING APPARATUS, APPARATUS FOR CONTROLLING EVAPORATING APPARATUS, METHOD FOR CONTROLLING EVAPORATING APPARATUS AND METHOD FOR USING EVAPORATING APPARATUS - An evaporating apparatus includes a first processing chamber and a second processing chamber, and a blowing device accommodated in the first processing chamber and a vapor deposition source accommodated in the second processing chamber are connected with each other via a connection pipe. An exhaust mechanism for evacuating the inside of the first processing chamber to a preset vacuum level is connected with the first processing chamber. Organic molecules vaporized from the vapor deposition source are blown out from the blowing device via the connection pipe and is adhered on a substrate, whereby a thin film is formed on the substrate. By installing the first processing chamber and the second processing chamber separately, the first processing chamber is not opened to the atmosphere when a film forming material is replenished, so that exhaust efficiency can be improved. | 04-15-2010 |
20100092666 | FILM DEPOSITION APPARATUS AND FILM DEPOSITION METHOD - A disclosed film deposition apparatus includes a process chamber inside which a reduced pressure space is maintained; a gas supplying portion that supplies a film deposition gas to the process chamber; a substrate holding portion that is made of a material including carbon as a primary constituent and holds a substrate in the process chamber; a coil that is arranged outside the process chamber and inductively heats the substrate holding portion; and a thermal insulation member that covers the substrate holding portion and is arranged to be separated from the process chamber, wherein the reduced pressure space is separated into a film deposition gas supplying space to which the film deposition gas is supplied and a thermal insulation space defined between the substrate holding portion and the process chamber, and wherein a cooling medium is supplied to the thermal insulation space. | 04-15-2010 |
20100098851 | TECHNIQUES FOR ATOMIC LAYER DEPOSITION - Techniques for atomic layer deposition (ALD) are disclosed. In one particular exemplary embodiment, the techniques may be realized as a system for ALD comprising a plurality of reactors in a stacked configuration, wherein each reactor comprises a wafer holding portion for holding a target wafer, a gas assembly coupled to the plurality of reactors and configured to provide at least one gas to at least one of the plurality of reactors, and an exhaust assembly coupled to the plurality of reactors and configured to exhaust the at least one gas from the at least one of the plurality of reactors. The gas assembly may further comprise a valve assembly coupled to each of the first gas inlet, the second gas inlet, and the third gas inlet, where the valve assembly is configured to selectively release at least one of the first gas, the second gas, and the third gas. | 04-22-2010 |
20100098852 | ARRANGEMENT AND METHOD FOR REGULATING A GAS STREAM OR THE LIKE - An arrangement for the regulation of a gas stream or the like is provided, which comprises at least one vaporizer crucible for the vaporization of a material or at least one supply container with material vapor. The vaporized material or the material vapor is conducted via a vapor conduit to a substrate. The at least one vaporizer crucible or the at least one supply container is connected via a dosing pipe with the vapor conduit. A tappet projects into the dosing pipe. By means of a regulator the position of the tappet in the dosing pipe is regulated as a function of a measured variable. | 04-22-2010 |
20100104751 | EVAPORATING APPARATUS, EVAPORATING METHOD AND MANUFACTURING METHOD OF EVAPORATING APPARATUS - An evaporating apparatus includes: a plurality of vapor deposition sources for respectively vaporizing different film forming materials accommodated therein; a plurality of blowing devices for blowing off film forming materials vaporized from the vapor deposition sources through blowing openings; and one or more partition walls for separating the adjacent blowing devices. The one or more partition walls are installed such that relationships of a gap G between each partition wall and the substrate, a height T from each blowing opening to a top surface of each partition wall, a thickness D of each partition wall and a distance E from a center position of each vapor deposition source to a center position of each partition wall satisfy an inequality of E<(G+T)×D/2G. Further, an internal pressure of the processing chamber is controlled to be about 0.01 Pa or less. | 04-29-2010 |
20100112211 | ZIRCONIUM, HAFNIUM, TITANIUM, AND SILICON PRECURSORS FOR ALD/CVD - Zirconium, hafnium, titanium and silicon precursors useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of corresponding zirconium-containing, hafnium-containing, titanium-containing and silicon-containing films, respectively. The disclosed precursors achieve highly conformal deposited films characterized by minimal carbon incorporation. | 05-06-2010 |
20100112212 | ADJUSTABLE GAS DISTRIBUTION APPARATUS - Embodiments of the present invention generally provide apparatus and methods for altering the contour of a gas distribution plate within a process chamber without breaking vacuum conditions within the chamber. In one embodiment, a central support device adjusted to vary the height of a central region of a gas distribution plate with respect to the periphery of the gas distribution plate. In another embodiment, a plurality of central support devices is adjusted to vary the height of a central region of a gas distribution plate with respect to the periphery of the plate. In yet another embodiment, a plurality of central support devices and a plurality of mid-range support devices are adjusted to vary the height of certain regions of the gas distribution plate with respect to other regions of the gas distribution plate. In one embodiment, the contour of the gas distribution plate is altered based on changes detected within the process chamber. | 05-06-2010 |
20100112213 | SUSCEPTOR DEVICE, MANUFACTURING APPARATUS OF EPITAXIAL WAFER, AND MANUFACTURING METHOD OF EPITAXIAL WAFER - In a manufacturing apparatus for manufacturing an epitaxial wafer with a wafer being mounted substantially concentrically with a susceptor, a center rod is provided to extend in an up-and-down direction on a side of a non-mounting surface of the susceptor so that its upper end is adjacent to the center of the susceptor. With this arrangement, part of radiation light irradiated toward the susceptor is diffusely reflected by the center rod before reaching the central portion of the susceptor, thereby reducing the amount of the radiation light irradiated to the central portion of the susceptor as well as lowering the temperature of the portion. Since the center rod and the susceptor are not in surface contact, the center rod does not take the heat from the susceptor, thereby suppressing the temperature from decreasing locally at the central portion of the susceptor. | 05-06-2010 |
20100129548 | ALD APPARATUS AND METHOD - Improved apparatus and method for SMFD ALD include a method designed to enhance chemical utilization as well as an apparatus that implements lower conductance out of SMFD-ALD process chamber while maintaining full compatibility with standard wafer transport. Improved SMFD source apparatuses and methods from volatile and non-volatile liquid and solid precursors are disclosed, e.g., a method for substantially controlling the vapor pressure of a chemical source within a source space comprising: sensing the accumulation of the chemical on a sensing surface; and controlling the temperature of the chemical source depending on said sensed accumulation. | 05-27-2010 |
20100136232 | CURING OF POLYMER COMPOSITES - There is provided an apparatus ( | 06-03-2010 |
20100136233 | OBLIQUE VACUUM DEPOSITION FOR ROLL-ROLL COATING OF WIRE GRID POLARIZER LINES ORIENTED IN A DOWN-WEB DIRECTION - Material may be obliquely deposited on a plurality of down-web oriented features on a substrate oriented in a down-web (z) direction or other than a cross-web (y) direction. A linear source generates a vapor flux of a material oriented parallel to the substrate and either parallel to the y direction or at an angle intermediate the y and z directions. The vapor flux impinges on the substrate at an oblique angle relative to the y direction. The substrate moves in the z direction relative to the linear source as the material impinges on the substrate. The vapor flux has a sufficiently narrow angular distribution in a plane perpendicular the substrate and parallel to the y direction that material deposits on predetermined portions of the down-web oriented features but not other portions, forming parallel down-web oriented lines of the material on the substrate. | 06-03-2010 |
20100143587 | VAPOR DEPOSITION APPARATUS AND VAPOR DEPOSITION METHOD - A vapor deposition apparatus includes a linear head including a plurality of nozzles, and an angle controller controlling an inclined angle of the linear head. The angle of inclination of the linear head can be varied so as to position different portions of the linear head at different distances from the surface of a substrate. | 06-10-2010 |
20100151127 | APPARATUS AND METHOD FOR PREVENTING PROCESS SYSTEM CONTAMINATION - Embodiments of the present invention generally provide apparatus and methods for preventing contamination within a processing system due to substrate breakage. In one embodiment, an acoustic detection mechanism is disposed on or within a process chamber to monitor conditions within the process chamber. In one embodiment, the acoustic detection mechanism detects conditions indicative of substrate breakage within the process chamber. In one embodiment, the acoustic detection mechanism detects conditions that are known to lead to substrate breakage within the process chamber. In one embodiment, the acoustic detection mechanism is combined with an optical detection mechanism. By early detection of substrate breakage or conditions known to lead to substrate breakage, the process chamber may be taken off line and repaired prior to contamination of the entire process system. | 06-17-2010 |
20100159132 | Linear Deposition Source - A deposition source includes a plurality of crucibles that each contains a deposition material. A heat shield provides at least partial thermal isolation for at least one of the plurality of crucibles. A body is included with a plurality of conductance channels. An input of each of the plurality of conductance channels is coupled to an output of a respective one of the plurality of crucibles. A heater increases a temperature of the plurality of crucibles so that each crucible evaporates the deposition material into the plurality of conductance channels. An input of each of a plurality of nozzles is coupled to an output of one of the plurality of conductance channels. Evaporated deposition materials are transported from the crucibles through the conductance channels to the nozzles where the evaporated deposition material is ejected from the plurality of nozzles to form a deposition flux. | 06-24-2010 |
20100159133 | Gas Dispersion Shield Method - A gas dispersion shield and method for protecting the bottom surface of a gas deposition chamber, while injecting gas from a gas insertion channel into the chamber at a non-vertical angle. The gas dispersion shield includes a cylindrically shaped vertical sidewall, an annular flange extending horizontally and outwardly from the sidewall upper end, and a horizontal wall that extends inwardly from the sidewall lower end. The flange includes a top surface, a bottom surface, and a plurality of holes formed through the flange each extending in a non-vertical direction from the bottom surface to the top surface. The bottom surface includes an annular protrusion that fits at least partially into the gas insertion channel, to ensure the gas flows through the non-vertical holes instead of escaping around the flange. | 06-24-2010 |
20100166955 | SYSTEM AND METHOD FOR THIN FILM DEPOSITION - A reaction chamber assembly suitable for forming thin film deposition layers onto solid substrates includes a reaction chamber and an input plenum for receiving source material from gas source containers and delivering a flow of source material into the reaction chamber uniformly distributed across a substrate support width. An output plenum connected between the reaction chamber and a vacuum pump uniformly removes an outflow of material from the reaction chamber across the substrate support width. The input plenum is configured to expand a volume of the source material and deliver the source material to the substrate support area with uniform source material flow distribution across the substrate support width. The output plenum is configured to remove the outflow material across the entire substrate support width and to compress the volume of outflow material prior to the outflow material exiting the output plenum. The resulting source material flow over substrates supported in the substrate support area is uniformly distributed across the substrate support width and unidirectional with a uniform flow velocity. The configuration of the reaction chamber assembly reduces pump down times. | 07-01-2010 |
20100173072 | METHOD AND DEVICE FOR CONTROLLING OXIDIZING-REDUCING OF THE SURFACE OF A STEEL STRIP RUNNING CONTINUOUSLY THROUGH A RADIANT TUBES FURNACE FOR ITS GALVANIZING - A method for guaranteeing the oxidation of a strip designed to prevent the selective oxidation of alloy elements of the steel in a continuous steel strip galvanizing annealing furnace having a pre-heating section and a hold section and provided only with radiant tubes. The oxidation of the strip is designed to prevent the selective oxidation of elements of the steel alloy. The novel method includes the following steps: installation of at least one modified tube capable of injection an oxidizing medium at least one point in the oven heating section and/or at least one point in the hold section and injection of the oxidizing medium by means of the modified tube(s), the oxidizing medium having a composition such that in the conditions of the temperature of the oxidizing medium and the steel strip and as a function of the chemical composition of the strip said medium has a dew point which guarantees an in-depth oxidation of the alloy elements of the steel strip. | 07-08-2010 |
20100178423 | METHOD FOR CONTROLLING FLOW AND CONCENTRATION OF LIQUID PRECURSOR - A method for controlling flow and concentration of a liquid precursor includes: supplying a carrier gas to a first auto-pressure regulator and outputting therefrom the carrier gas at a first pressure to a precursor reservoir; outputting the mixture of the vaporized precursor and the carrier gas from the precursor reservoir; and supplying the mixture to a second auto-pressure regulator and outputting therefrom the mixture at a second pressure to a reactor via an orifice. | 07-15-2010 |
20100183807 | Substrate processing apparatus and substrate processing method - A substrate processing apparatus includes heat treatment apparatus blocks each comprised of stacked heat treatment apparatuses HP each having temperature adjustment mechanism | 07-22-2010 |
20100189897 | HIGH TEMPERATURE EVAPORATOR CELL HAVING PARALLEL-CONNECTED HEATING ZONES - An evaporator cell ( | 07-29-2010 |
20100189898 | MANUFACTURING OF ADDUCT FREE ALKALINE-EARTH METAL Cp COMPLEXES - Methods and compositions for the deposition of a metal containing film on a substrate. The film is deposited with a substantially adduct free precursor which is prepared by a process to remove the adduct from an adducted starting material. | 07-29-2010 |
20100196599 | STAGGERED DUAL PROCESS CHAMBERS USING ONE SINGLE FACET ON A TRANSFER MODULE - A method and apparatus for increasing the throughput of substrate processing systems is provided. A processing chamber configured for attachment to a cluster tool for processing substrates has dual, staggered processing regions. The processing regions are isolated from one another such that a substrate may be processed in each region simultaneously. | 08-05-2010 |
20100203242 | SELF-CLEANING SUSCEPTOR FOR SOLAR CELL PROCESSING - An apparatus and method for processing substrates are provided. In one embodiment, a susceptor for an apparatus for processing a substrate includes a plurality of segments aligned to form a substrate support surface, each segment having one or more flat surfaces for supporting the substrate, and an opening that extends along an axis of rotation. The susceptor also includes a plurality of rotatable shafts, each shaft positioned in the opening of one of the segments. The method of processing a batch of substrates includes transferring at least one substrate in the batch into a processing chamber and onto a susceptor, processing the at least one substrate within the chamber, transferring the at least one substrate out of the processing chamber, and removing debris from the substrate support surface by rotating the segments to dump any debris on the substrate support surface onto a chamber floor where it will remain during further processing. | 08-12-2010 |
20100215853 | METHOD FOR CONTROLLING PROCESS GAS CONCENTRATION - A method for controlling process gas concentration for treatment of substrates in a process space in which a medium is evaporated in a bubbler by bubbles of a carrier gas passed through the medium is achieved by producing a stipulated constant internal pressure in the bubbler and subsequent introduction of the carrier gas into the bubbler with simultaneous temperature control of the medium being evaporated within the bubbler to set a stipulated vapor pressure. | 08-26-2010 |
20100227057 | CVD APPARATUS WHICH HAS ROTATION TYPE HEATED AND THE CONTROL METHOD - The present invention relates to a chemical vapor deposition (CVD) apparatus which has rotation type heater. Particularly, the inventive CVD apparatus has advantageous effects in that it includes a motor for rotating the heater and a position sensor assembly for detecting the orientational position of the heater, so that the thickness of a thin film being deposited on a wafer can be made uniform through the rotation of the heater upon the deposition in spite of uneven introduction of a reaction gas into a reaction chamber, and the orientational positions of the wafer at the start and the end of the deposition process which are identical to each other can be secured to thereby orient the wafer in a predetermined direction on the heater. | 09-09-2010 |
20100239756 | PLASMA PROCESSING APPARATUS AND GAS EXHAUST METHOD - A plasma processing apparatus is provided for performing plasma processing to a substrate to be processed. The plasma processing apparatus is provided with a processing chamber | 09-23-2010 |
20100247763 | REACTION CHAMBER WITH REMOVABLE LINER - A reaction chamber assembly for thin film deposition processes or the like includes an outer wall assembly for enclosing an outer volume and a removable liner installed into the outer volume through an outer aperture for preventing precursors or reactants from coming into contact with internal surfaces of the outer wall assembly and forming thin film layers thereon. The removable liner encloses a reaction chamber and includes substrate support trays or the like for supporting substrates being coated. Thin film layers are formed onto internal surfaces of the removable liner instead of onto surfaces of the outer wall assembly. The removable liner may be disposable or may comprise stainless steel, which can be removed when contaminated, cleaned by abrasive blasting such as bead blasting, and replaced. Two removable liners can be used to periodically swap removable liners and clean one of the liners while the other is in service with minimal disruption to production coating schedules. Other removable cleanable elements such as input and output plenums, door liners and conduits comprising stainless steel can be periodically removed and cleaned by abrasive blasting. | 09-30-2010 |
20100247764 | Method For Surface Treatment of Ti-Al Alloy and Ti-Al Alloy Obtained by The Method - There is provided a surface treatment method for improving high temperature resistance oxidizability of a Ti—Al alloy in a manner suitable for mass production and the Ti—Al alloy. A Ti—Al alloy base material containing 15 at % or more to 55 at % or less of Al is heated and held in a gas atmosphere containing a fluorine source gas to form a fluorine inspissation layer with a thickness of 0.1 μm or more to 10 μm or less on the surface of the Ti—Al alloy base material, and a maximum concentration of F in the fluorine inspissation layer is made to be 2 at % or more to 35 at % or less. Thereby, when exposed to a high temperature oxidizing atmosphere, the surface of the Ti—Al alloy base is coated with an Al | 09-30-2010 |
20100247765 | METAL COMPOUND, MATERIAL FOR CHEMICAL VAPOR PHASE GROWTH, AND PROCESS FOR FORMING METAL-CONTAINING THIN FILM - A novel metal compound of general formula (1), a material for chemical vapor phase growth containing the compound, and a process for forming a metal-containing thin film by chemical vapor phase growth using the material. Among the compounds of formula (1), those wherein X is a chlorine atom are preferred because of inexpensiveness and high volatility. When M is titanium, those wherein m is 1 are preferred as having a greater difference between a volatilization temperature (vapor temperature) and a deposition temperature (reaction temperature), which provides a broader process margin. | 09-30-2010 |
20100255194 | GRADIENT FABRICATION TO DIRECT TRANSPORT ON A SURFACE - The present invention discloses gradients and methods of forming gradients. The gradients can form a component of a molecular machine, such as those disclosed herein. The molecular machines of the present invention can perform a range of tasks including nanoparticle heterostructure assembly, derivatization of a nanoparticle and synthesis of biomolecules, to name just a few applications. | 10-07-2010 |
20100255195 | APPARATUS AND METHOD FOR MOVING A SUBSTRATE - A substrate holder and method for using it to move a substrate. The holder comprises a frame having an inner periphery defining a first opening for receiving the substrate, and a shoulder projecting laterally inward from the inner periphery of the frame for supporting the substrate in the first frame opening. The shoulder has an inner periphery defining a second opening smaller than the first opening for receiving a substrate support. The holder and a substrate therein is moved to a position above the substrate support and then lowered to a position in which the shoulder of the holder is positioned below a top surface of the substrate support and the substrate is deposited on the top surface of the substrate support. | 10-07-2010 |
20100255196 | TREATMENT SYSTEM FOR FLAT SUBSTRATES - A reactor for the treatment of flat substrates includes a vacuum chamber with a process space arranged therein. A first electrode and a counterelectrode generate a plasma for the treatment of a surface to be treated and form two opposite walls of the process space. The reactor further includes means for introducing and means for removing gaseous material into and out from the process space. At least one substrate is accommodated by a front side of the counterelectrode. The vacuum chamber includes an opening having a closure device. The reactor includes a device for varying the relative distance between the first electrode and the counterelectrode and a device assigned to the counterelectrode for accommodating substrates. At least one substrate is arranged at an angle alpha in a range of between 0° and 90° relative to a perpendicular direction at least during the performance of the treatment. | 10-07-2010 |
20100266765 | METHOD AND APPARATUS FOR GROWING A THIN FILM ONTO A SUBSTRATE - An apparatus and method of growing a thin film onto a substrate comprises placing a substrate in a reaction chamber and subjecting the substrate to surface reactions of a plurality of vapor-phase reactants according to the ALD method. Non-fully closing valves are placed into the reactant feed conduit and backsuction conduit of an ALD system. The non-fully closed valves are operated such that one valve is open and the other valve is closed during the purge or pulse cycle of the ALD process. | 10-21-2010 |
20100279008 | FILM DEPOSITION APPARATUS AND FILM DEPOSITION METHOD - The present invention is a film deposition apparatus configured to deposit a film on a substrate that has been loaded into a vacuum container via a transfer opening and placed on a table in the vacuum container, by supplying a process gas to the substrate from a process-gas supply part opposed to the table under a vacuum atmosphere, while heating a table surface of the table, the film deposition apparatus comprising: an elevating mechanism configured to vertically move the table between a process position at which the substrate is subjected to a film deposition process, and a transfer position at which the substrate is transferred to and from an external transfer mechanism that has entered from the transfer opening; a surrounding part configured to surround the table with a gap therebetween, when the table is located at the process position, so that the surrounding part and the table divide an inside of the vacuum container into an upper space, which is located above the table, and a lower space, which is located below the table; a vacuum exhaust conduit in communication with the upper space, through which a process atmosphere in the upper space is discharged to create a vacuum in the upper space; a heating unit configured to heat a gas contact region ranging from the upper space to the vacuum exhaust conduit, to a temperature higher than a temperature allowing adhesion of reactant; and a heat insulation part disposed between the heating unit and a lower part of the vacuum container surrounding the lower space. | 11-04-2010 |
20100285217 | PROCESS FOR PRODUCING OXIDE FILMS - Processes are provided for producing bismuth-containing oxide thin films by atomic layer deposition. In preferred embodiments an organic bismuth compound having at least one monodentate alkoxide ligand is used as a bismuth source material. Bismuth-containing oxide thin films can be used, for example, as ferroelectric or dielectric materials in integrated circuits and as superconductor materials. | 11-11-2010 |
20100285218 | Linear Deposition Source - A deposition source includes at least one crucible for containing deposition material. A body includes a conductance channel with an input coupled to an output of the crucible. A heater increases a temperature of the crucible so that the crucible evaporates the deposition material into the conductance channel. A plurality of nozzles is coupled to an output of the conductance channel so that evaporated deposition material is transported from the crucible through the conductance channel to the plurality of nozzles where the evaporated deposition material is ejected from the plurality of nozzles to form a deposition flux. At least one of the plurality of nozzles includes a tube that is positioned proximate to the conductance channel so that the tube restricts an amount of deposition material supplied to the nozzle including the tube. | 11-11-2010 |
20100297346 | VAPORIZING UNIT, FILM FORMING APPARATUS, FILM FORMING METHOD, COMPUTER PROGRAM AND STORAGE MEDIUM - A vaporizing unit, in supplying a gas material produced by vaporizing a liquid material onto a substrate to conduct a film forming process, can vaporize the liquid material with high efficiency to suppress generation of particles. With the vaporizing unit, positively or negatively charged bubbles, which have a diameter of 1000 nm or less, are produced in the liquid material, and the liquid material is atomized to form a mist of the liquid material. Further, the mist of the liquid material is heated and vaporized. The fine bubbles are uniformly dispersed in advance in the liquid material, so that very fine and uniform mist particles of the liquid material are produced when the liquid material is atomized, which makes heat exchange readily conducted. By vaporizing the mist of the liquid material, vaporization efficiency is enhanced, and generation of particles can be suppressed. | 11-25-2010 |
20100297347 | SUBSTRATE SUPPORT HAVING SIDE GAS OUTLETS AND METHODS - A substrate support for a process chamber comprises an electrostatic chuck having a receiving surface to receive the substrate and a gas distributor baseplate below the electrostatic chuck. The gas distributor baseplate comprises a circumferential sidewall having a plurality of gas outlets that are spaced apart from one another to introduce a process gas into the process chamber from around the perimeter of the substrate and in a radially outward facing direction. | 11-25-2010 |
20100297348 | THIN FILM DEPOSITION APPARATUS - A thin film deposition apparatus that can be simply applied to manufacture large-sized display devices on a mass scale and that improves manufacturing yield includes: a deposition source; a first nozzle disposed at a side of the deposition source and including a plurality of first slits arranged in a first direction; a second nozzle disposed opposite to the first nozzle and including a plurality of second slits arranged in the first direction; a barrier wall assembly including a plurality of barrier walls that are arranged in the first direction in order to partition a space between the first nozzle and the second nozzle; and an alignment member including an interval control member that adjusts an interval between the second nozzle and the substrate, and/or an alignment control member that adjusts alignment between the second nozzle and the substrate. | 11-25-2010 |
20100297349 | THIN FILM DEPOSITION APPARATUS - A thin film deposition apparatus used to produce large substrates on a mass scale and improve manufacturing yield. The thin film deposition apparatus includes a deposition source; a first nozzle disposed at a side of the deposition source and including a plurality of first slits arranged in a first direction; a second nozzle disposed opposite to the first nozzle and including a plurality of second slits arranged in the first direction; and a barrier wall assembly including a plurality of barrier walls arranged in the first direction so as to partition a space between the first nozzle and the second nozzle. | 11-25-2010 |
20110008539 | VAPOR GENERATOR AND VAPOR DEPOSITION APPARATUS - An organic thin film having excellent film quality is formed. A vapor generator of the present invention has an evaporation chamber, a dispense head and a tank. A vapor deposition material is in the liquid state, stored in the tank, and fed to the dispense head from the tank. The dispense head dispenses the vapor deposition material fed inside thereof from a dispense orifice and disposes the vapor deposition material on a heating member inside the evaporation chamber. The dispense head accurately feeds the vapor deposition material by a required amount. Because only the required amount of the vapor deposition material is heated, an organic thin film excellent in film quality is formed without deterioration. | 01-13-2011 |
20110020544 | EXHAUST SYSTEM STRUCTURE OF FILM FORMATION APPARATUS, FILM FORMATION APPARATUS, AND EXHAUST GAS PROCESSING METHOD - An exhaust system structure of a film formation apparatus includes an exhaust line ( | 01-27-2011 |
20110020545 | LATERAL-FLOW DEPOSITION APPARATUS AND METHOD OF DEPOSITING FILM BY USING THE APPARATUS - A deposition apparatus according to an exemplary embodiment of the present invention is a lateral-flow deposition apparatus in which in which a process gas flows between a surface where a substrate is disposed and the opposite surface, substantially in parallel with the substrate. The lateral-flow deposition apparatus includes: a substrate support that moves up/down and rotates the substrate while supporting the substrate; a reactor cover that defines a reaction chamber by contacting the substrate support; and a substrate support lifter and a substrate support rotator that move the substrate support. | 01-27-2011 |
20110027480 | CHEMICAL VAPOR DEPOSITION APPARATUS CAPABLE OF CONTROLLING DISCHARGING FLUID FLOW PATH IN REACTION CHAMBER - A chemical vapor deposition apparatus is equipped to control the width of a gas discharge path between a susceptor and an inner surface of a chamber without having to resort to redesign and remanufacturing of the apparatus. The chemical vapor deposition apparatus includes: a chamber; a susceptor positioned inside the chamber and on which a substrate can be loaded; a shower head injecting a processing gas toward the substrate; and a guide unit detachably installed inside the chamber to guide the processing gas such that the processing gas injected from the shower head is discharged through a chamber hole formed in the chamber. | 02-03-2011 |
20110033618 | GAS SUPPLY SYSTEM AND METHOD FOR PROVIDING A GASEOS DEPOSITION MEDIUM - A gas supply system for a gas phase deposition reaction chamber, in particular a CVD gas phase deposition reaction chamber or a PECVD gas phase deposition reaction chamber, comprises a gas supply device which has at least one heating element for heating a deposition medium and transferring the deposition medium into the gaseous phase. Furthermore, the gas supply system comprises a gas feeding device for transporting the gaseous deposition medium from the gas supply device to the gas phase deposition reaction chamber, wherein the gas feeding device comprises a sealing element at the transition to the gas phase deposition reaction chamber. As a result, it is possible to provide a gas supply system for a gas phase deposition reaction chamber allowing a homogeneous feeding of even deposition media which are not present in gaseous form at room temperature into the reaction chamber. | 02-10-2011 |
20110033619 | THIN FILM DEPOSITION APPARATUS INCLUDING DEPOSITION BLADE - A thin film deposition apparatus includes a deposition source that is disposed opposite to a substrate and holds a deposition material that is vaporized; a first nozzle unit disposed between the substrate and the deposition source and having first slit units arranged in a first direction of the substrate; a second nozzle unit disposed between the first nozzle unit and the substrate and having second slit units arranged in the first direction of the substrate; and at least one barrier member assembly disposed between the first nozzle unit and the second nozzle unit and partitioning the space between the first nozzle unit and the second nozzle unit. A deposition blade is optionally disposed in any space formed between the first nozzle unit and the second nozzle unit during a stand-by mode to prevent the deposition of the deposition material from being deposited onto undesirable regions of the chamber. | 02-10-2011 |
20110033620 | COMPOUND LIFT PIN TIP WITH TEMPERATURE COMPENSATED ATTACHMENT FEATURE - A method and apparatus for a lift pin is described. In one embodiment, a lift pin head is described. The lift pin head includes a base member having a body made of a first material having a first coefficient of thermal expansion, and a tip disposed on the base member, the base member having a body made of a second material that is flexible at room temperature and having a second coefficient of thermal expansion, the first coefficient of thermal expansion being less than the second coefficient of thermal expansion. | 02-10-2011 |
20110033621 | THIN FILM DEPOSITION APPARATUS INCLUDING DEPOSITION BLADE - A thin film deposition apparatus for use with a substrate having deposition regions separated by non-deposition regions includes a deposition source, a first nozzle assembly disposed in front of the deposition source, at least one barrier wall assembly disposed in front of the first nozzle assembly, and a second nozzle assembly disposed between the barrier wall assembly and the substrate. At least one deposition blade is disposed between the deposition source and the first nozzle assembly, the first nozzle assembly and the barrier wall assembly, the barrier wall assembly and the second nozzle assembly, or the second nozzle assembly and the substrate. Using the deposition blade, the deposition of the deposition material on the non-deposition regions of the substrate may be minimized during a deposition process. | 02-10-2011 |
20110045181 | APPLYING VAPOUR PHASE ALUMINIDE COATING ON AIRFOIL INTERNAL CAVITIES USING IMPROVED METHOD - A method of applying an aluminide coating to an internal cavity of a metal part, such as an airfoil. The method includes inserting a perforated sealed container containing a source of aluminide into the internal cavity and vaporizing the aluminide source to form an aluminide coating on the wall surface of the cavity. | 02-24-2011 |
20110045182 | SUBSTRATE PROCESSING APPARATUS, TRAP DEVICE, CONTROL METHOD FOR SUBSTRATE PROCESSING APPARATUS, AND CONTROL METHOD FOR TRAP DEVICE - The object described above is achieved by providing a substrate processing apparatus comprising a chamber configured to process a substrate, a gas supply part configured to supply gas into the chamber, an exhaust part configured to exhaust the gas within the chamber, a first trap provided between the chamber and the exhaust part and connected to the chamber, and a second trap provided between the first trap and the exhaust part, characterized in that there is provided a temperature controller configured to set the first trap to a first temperature at which non-reaction components included in the gas react to form a polymer, and to set the second trap to a second temperature at which the non-reaction components included in the gas deposit as monomers. | 02-24-2011 |
20110064877 | GAS SUPPLY DEVICE, VACUUM PROCESSING APPARATUS AND METHOD OF PRODUCING ELECTRONIC DEVICE - To provide a gas supply device | 03-17-2011 |
20110070369 | COVERING DEVICE AND METHOD FOR COATING COMPONENTS - A covering device for the coating of components via cold kinetic compaction or kinetic cold gas spraying, which can be used to cover a region which is not to be coated of a surface of the component which is to be coated. The covering device is profiled such that it encloses an acute angle with that region of the surface which is not to be coated. The particles of a coating material can be deflected from the component such that the particles do not adhere to the covering device. | 03-24-2011 |
20110076398 | EVAPORATION SOURCE AND VAPOR DEPOSITION APPARATUS USING THE SAME - An evaporation source that causes the evaporation bars to vaporize and emit small particles. The small particles of the evaporation bars are evenly dispersed all around the evaporation source. Thus, the particles then accumulate on workpieces to form symmetrical films. A vapor deposition apparatus using the present evaporation source is also described. | 03-31-2011 |
20110076399 | DEPOSITION SOURCE - A deposition source with uniform deposition characteristics includes a crucible in which a deposition material is disposed; a heat transfer member disposed on upper portions of the deposition material in the crucible; and an accommodation member for accommodating the heat transfer member and including a mesh plate. | 03-31-2011 |
20110086166 | UNIVERSAL ATOMIZER - The exemplary illustrations relate to an atomization system for a rotary atomizer for applying a coating agent, comprising a rotatably supported bell plate for atomizing the coating agent and for dispensing a spray jet of the coating agent, and comprising a guiding air ring for dispensing a first guiding air flow and a second guiding air flow for producing the spray jet dispensed by the bell plate. The two guiding air flows may comprise separate guiding air flow feeds and may further be set independently from each other. An exemplary bell plate and the guiding air ring may be designed such that the atomization system is suitable for coating the inside of chassis parts of motor vehicles and for coating the outside of chassis parts of motor vehicles. | 04-14-2011 |
20110097487 | FLUID DISTRIBUTION MANIFOLD INCLUDING BONDED PLATES - A fluid distribution manifold includes a first plate and a second plate. At least a portion of at least the first plate and the second plate define a relief pattern. A metal bonding agent is disposed between the first plate and the second plate such that the first plate and the second plate form a fluid flow directing pattern defined by the relief pattern. | 04-28-2011 |
20110097488 | FLUID DISTRIBUTION MANIFOLD INCLUDING MIRRORED FINISH PLATE - A fluid distribution manifold includes a first plate and a second plate. At least a portion of at least the first plate and the second plate define a relief pattern. At least one of the first plate and the second plate include a mirrored surface finish. A bonding agent is disposed between the first plate and the second plate such that the first plate and the second plate form a fluid flow directing pattern defined by the relief pattern. | 04-28-2011 |
20110097489 | DISTRIBUTION MANIFOLD INCLUDING MULTIPLE FLUID COMMUNICATION PORTS - A fluid conveyance device for thin film material deposition includes a fluid distribution manifold, a primary chamber, and a secondary fluid source. The fluid distribution manifold includes an output face that is connected in fluid communication to the primary chamber. The secondary fluid source is connected in fluid communication to the primary chamber through a plurality of conveyance ports. | 04-28-2011 |
20110097490 | FLUID DISTRIBUTION MANIFOLD INCLUDING COMPLIANT PLATES - A fluid distribution manifold includes a first plate and a second plate. The first plate includes a length dimension, a width dimension, and a thickness that allows the first plate to be deformable over at least one of the length dimension and the width dimension of the first plate. The second plate includes a length dimension, a width dimension, and a thickness that allows the second plate to be deformable over at least one of the length dimension and the width dimension of the second plate. At least a portion of at least the first plate and the second plate define a relief pattern that defines a fluid flow directing path. The first plate and the second plate are bonded together to form a non-planar shape in a height dimension along at least one of the length dimension and the width dimension. | 04-28-2011 |
20110097491 | CONVEYANCE SYSTEM INCLUDING OPPOSED FLUID DISTRIBUTION MANIFOLDS - A fluid conveyance system for thin film material deposition includes a first fluid distribution manifold and a second distribution manifold. The first fluid distribution manifold includes an output face that includes a plurality of elongated slots. The plurality of elongated slots includes a source slot and an exhaust slot. The second fluid distribution manifold includes an output face that includes a plurality of openings. The plurality of openings include a source opening and an exhaust opening. The second fluid distribution manifold is positioned spaced apart from and opposite the first fluid distribution manifold such that the source opening of the output face of the second fluid distribution manifold mirrors the source slot of the output face of the first fluid distribution manifold and the exhaust opening of the output face of the second fluid distribution manifold mirrors the exhaust slot of the output face of the first fluid distribution manifold. | 04-28-2011 |
20110097492 | FLUID DISTRIBUTION MANIFOLD OPERATING STATE MANAGEMENT SYSTEM - A fluid conveyance system for thin film material deposition is provided. A first fluid distribution manifold includes an output face that includes a plurality of elongated slots. The plurality of elongated slots include a source slot and an exhaust slot. A gas source is in fluid communication with the source slot. The gas source is configured to provide a gas to the output face of the distribution manifold. A gas receiving chamber is in fluid communication with the exhaust slot. The gas receiving chamber is configured to collect the gas provided to the output face of the distribution manifold through the exhaust slot. A sensor positioned to sense a parameter of the gas traveling from the gas source to the gas receiving chamber. A controller is connected in electrical communication with the sensor. The controller is configured to modify an operating parameter of the conveyance system based on data received from the sensor. | 04-28-2011 |
20110129602 | DIRUTHENIUM COMPLEX, AND MATERIAL AND METHOD FOR CHEMICAL VAPOR DEPOSITION - A diruthenium complex such as tetra(μ-formato)diruthenium(II,II) or tetra(μ-formato)(dehydrate)diruthenium(II,II), a material for chemical vapor deposition which comprises the complex, and a method of forming a ruthenium film from the material by chemical vapor deposition. | 06-02-2011 |
20110129603 | AIR-PERMEABLE FILTRATION MEDIA, METHODS OF MANUFACTURE AND METHODS OF USE - The present invention provides an air-permeable filtration media that includes an air-permeable backing and an adsorbent. The adsorbent is at least partially embedded in the air-permeable backing. The present invention also provides a method of manufacturing an air-permeable filtration media. The present invention also provides a method of substantially removing contaminants form air, employing the air-permeable filtration media. | 06-02-2011 |
20110135821 | METHODS OF AND APPARATUS FOR CONTROLLING PRESSURE IN MULTIPLE ZONES OF A PROCESS TOOL - A method of and a multiple zone pressure controller system for controlling the pressure of a gas or vapor flowing to at least two zones of a process tool such as a vacuum deposition chamber. The system comprises: at least two channels configured and arranged so as to provide the flow of the gas or vapor to corresponding zones of the process tool, each channel including a pressure controller configured and arranged to control the pressure of gas or vapor in each channel, a leakby orifice or nozzle configured to provide a leak rate of gas or vapor from the channel; and a controller configured and arrange to determine the true flow information to each zone of the process tool so that the true leak rate in the chamber can be determined. | 06-09-2011 |
20110143033 | VACUUM PROCESSING APPARATUS AND VACUUM PROCESSING METHOD - A vacuum processing apparatus has a degassing chamber and does not need a large-sized vacuum evacuation device. In the process of heating and degassing an object to be processed in the degassing chamber, transferring the object to be processed into a processing chamber through a buffer chamber; and performing vacuum processing, the degassing chamber is connected to an vacuum evacuation system having a low evacuation speed and degassing processing is performed in a vacuum atmosphere of 1 to 100 Pa (time | 06-16-2011 |
20110151119 | Methods and Systems of Transferring, Docking and Processing Substrates - In accordance with some embodiments described herein, a method for transferring a substrate to two or more process modules is provided, comprising loading at least one substrate into one or more mobile transverse chambers, the mobile transverse chambers being carried on a rail positioned adjacent to the two or more process modules, and wherein each mobile transverse chamber is configured to maintain a specified gas condition during conveyance of the substrate. One or more drive systems are actuated to propel at least one of the one or more mobile transverse chambers along the rail. The at least one mobile transfer chamber docks to at least one of the process modules, and the substrate is conveyed from the mobile transverse chamber to the at least one process modules. | 06-23-2011 |
20110159183 | CHEMICAL VAPOR DEPOSITION APPARATUS AND A CONTROL METHOD THEREOF - Disclosed are a chemical vapor deposition (CVD) apparatus and a control method thereof, the CVD apparatus including: a chamber; a susceptor which is provided inside the chamber and on which a substrate is placed; a process-gas supplying unit which is placed above the susceptor and supplies process gas; a sensing tube which is placed above the susceptor and opened toward the susceptor or the substrate; a temperature sensing member which is installed at a side of the sensing tube and senses temperature of the susceptor or substrate through the sensing tube; and a purge-gas supplying unit which injects purge gas into the sensing tube. | 06-30-2011 |
20110159184 | METHOD OF FLUORIDATION, THE UNIT OF FLUORIDATION, AND THE DIRECTIONS FOR USE OF THE UNIT OF FLUORIDATION - A method of fluoridation that can maintain a stable treatment quality is provided. The method of the fluoridation treatment performs the fluoridation treatment by heating and keeping a workpiece in a fluoridation treatment space filled with a predetermined fluoride atmosphere. By exposing an interior space structure that is reactive against fluorine within the fluoridation treatment space, forming a fluoride layer in advance on a surface of the interior space structure exposed within the fluoridation treatment space, and performing the fluoridation treatment, a fluoridation source gas supplied for the fluoridation treatment of the workpiece is not significantly consumed for fluoridating the surface of the interior space structure during the fluoridation treatment. Further, even when a fluoridation potential of the supplied fluoridation source gas is insufficient, the fluoride layer on the surface of the interior space structure discharges the fluoridation gas. Thereby, the fluoride atmosphere in the fluoridation treatment space during the fluoridation treatment can be appropriately maintained. | 06-30-2011 |
20110165325 | COOL-DOWN SYSTEM AND METHOD FOR A VAPOR DEPOSITION SYSTEM - A system for vapor deposition of a thin film layer on photovoltaic (PV) module substrates includes a system for cool-down of the vacuum chamber through which substrates are conveyed in a vapor deposition process. The cool-down system is configured with the vacuum chamber to recirculate a cooling gas through the vacuum chamber and through an external heat exchanger in a closed cool-down loop. An associated method for forced cool-down of the vacuum chamber is also provided. | 07-07-2011 |
20110165326 | AUTOMATIC FEED SYSTEM AND RELATED PROCESS FOR INTRODUCING SOURCE MATERIAL TO A THIN FILM VAPOR DEPOSITION SYSTEM - A feed system and related process are configured to continuously feed measured doses of source material to a vapor deposition apparatus wherein the source material is sublimated and deposited as a thin film on a substrate. The system includes a bulk material hopper, and an upper dose cup disposed to receive source material from the hopper. A lower dose cup is disposed in a vacuum lock chamber to receive a measured dose of source material from the upper dose cup. A transfer mechanism is disposed below the vacuum lock chamber to receive the measured dose of source material from the lower dose cup and to transfer the source material to a downstream deposition head while isolating the deposition conditions and sublimated source material within the deposition head. | 07-07-2011 |
20110165327 | THIN FILM DEPOSITION APPARATUS - A thin film deposition apparatus that can be simply applied to produce large-sized display devices on a mass scale and that improves manufacturing yield. The thin film deposition apparatus includes a deposition source that discharges a deposition material; a deposition source nozzle unit disposed at a side of the deposition source and including a plurality of deposition source nozzles arranged in a first direction; and a patterning slit sheet disposed opposite to the deposition source nozzle unit and including a plurality of patterning slits arranged in a second direction that is perpendicular to the first direction. A deposition is performed while the substrate or the thin film deposition apparatus moves relative to each other in the first direction, and the deposition source, the deposition source nozzle unit, and the patterning slit sheet are formed integrally with each other. | 07-07-2011 |
20110165328 | METHOD OF FORMING MIXED RARE EARTH OXIDE AND ALUMINATE FILMS BY ATOMIC LAYER DEPOSITION - A method is provided for depositing a gate dielectric that includes at least two rare earth metal elements in the form of an oxide or an aluminate. The method includes disposing a substrate in a process chamber and exposing the substrate to a gas pulse containing a first rare earth precursor and to a gas pulse containing a second rare earth precursor. The substrate may also optionally be exposed to a gas pulse containing an aluminum precursor. Sequentially after each precursor gas pulse, the substrate is exposed to a gas pulse of an oxygen-containing gas. In alternative embodiments, the first and second rare earth precursors may be pulsed together, and either or both may be pulsed together with the aluminum precursor. The first and second rare earth precursors comprise a different rare earth metal element. The sequential exposing steps may be repeated to deposit a mixed rare earth oxide or aluminate layer with a desired thickness. Purge or evacuation steps may also be performed after each gas pulse. | 07-07-2011 |
20110171380 | SUSCEPTOR, COATING APPARATUS AND COATING METHOD USING THE SUSCEPTOR - In accordance with the embodiment of the present invention, there is provided a susceptor which includes an annular first susceptor portion for supporting the peripheral portion of a silicon wafer and further includes a second susceptor portion provided in contact with the peripheral portion of the first susceptor portion and covering the opening of the first susceptor portion. The second susceptor portion is disposed so that, when the silicon wafer is supported on the first susceptor portion, a gap of a predetermined size is formed between the silicon wafer and the second susceptor portion, and so that another gap of a size substantially equal to the predetermined size and directly connected to the above gap is formed between the first susceptor portion and the second susceptor portion. | 07-14-2011 |
20110171381 | SILICON PRECURSORS AND METHOD FOR LOW TEMPERATURE CVD OF SILICON-CONTAINING FILMS - Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 500° C. In addition, embodiments of the silicon precursors incorporate a —Si—Y—Si— bond, where Y may comprise an amino group, a substituted or unsubstituted hydrocarbyl group, or oxygen. In an embodiment a silicon precursor has the formula: | 07-14-2011 |
20110195184 | SUBSTRATE PROTECTION DEVICE AND METHOD - A protection device is adapted for protecting substrates within a process chamber against deposition material generated by a deposition source. The protection device includes a plate adapted for facing the substrate at a side opposing the deposition source and a mesh disposed over the plate. The mesh faces the substrate to be processed. | 08-11-2011 |
20110195185 | SiGe Matrix Nanocomposite Materials with an Improved Thermoelectric Figure of Merit - Nanocomposite materials comprising a SiGe matrix with silicide and/or germanide nanoinclusions dispersed therein, said nanocomposite materials having improved thermoelectric energy conversion capacity. | 08-11-2011 |
20110195186 | PLANE-TYPE FILM CONTINUOUS EVAPORATION SOURCE AND THE MANUFACTURING METHOD AND SYSTEM USING THE SAME - A manufacturing method and system using a plane-type film continuous evaporation source are disclosed, in which the manufacturing method comprises the steps of: providing a plane-type film continuous evaporation source, being a substrate having at least one evaporation material coated on a surface thereof while distributing the at least one evaporation material in a specific area of the substrate capable of covering all the plates to be processed by the evaporated evaporation material; arranging a heater inside the specific area to be used for enabling the at least one evaporation material to evaporate and thus spreading toward the processed plates. Thereby, the evaporated evaporation material can be controlled at the molecular/atomic level for enabling the same to form a film according to surface-nucleation, condensation and growth with superior evenness, nano-scale adjustability, specialized structure and function that can not be achieve by the films from conventional spray coating means. | 08-11-2011 |
20110195187 | DIRECT LIQUID VAPORIZATION FOR OLEOPHOBIC COATINGS - This is directed to a liquid vaporization process for depositing an oleophobic ingredient on a surface of an electronic device component using a PVD process. A raw liquid material that includes the oleophobic ingredient can be placed in a liquid supply system coupled to a vacuum chamber. The liquid supply system can be pressured by an inert gas to prevent undesired chemical reactions between the oleophobic ingredient and air. The liquid, including the oleophobic ingredient, can vaporize upon reaching the vaporizing unit, and the oleophobic ingredient can be deposited on the component. | 08-11-2011 |
20110206841 | METHOD AND DEVICE FOR CONDITIONING PAPER - Method for conditioning paper, which comprises a first step of cooling and one of applying a liquid to the paper. In the cooling step, the temperature of the paper is reduced, e.g. below ambient temperature or below the dew point of a liquid-saturated gas mass applied in the liquid-application step. The gas may be ambient air and the liquid water. Control means monitor the amount of liquid applied to the paper by means of measuring the relative humidity of the air, the absolute humidity of the paper, the temperature of the device where the liquid is applied and the temperature of the paper. The invention also comprises a device for applying the method and it may be applied to paper emerging from a printer, e.g. a digital printer. | 08-25-2011 |
20110206842 | CVD-Siemens Reactor Process Hydrogen Recycle System - A hydrogen recycle process and system for use with chemical vapor deposition (CVD) Siemens type processes is provided. The process results in substantially complete or complete hydrogen utilization and substantially contamination-free or contamination-free hydrogen. | 08-25-2011 |
20110206843 | PROCESSING METHODS AND APPARATUS WITH TEMPERATURE DISTRIBUTION CONTROL - Wafer treatment process and apparatus is provided with a wafer carrier arranged to hold wafers and to inject a fill gas into gaps between the wafers and the wafer carrier. The apparatus is arranged to vary the composition, flow rate, or both of the fill gas so as to counteract undesired patterns of temperature non-uniformity of the wafers. | 08-25-2011 |
20110217464 | METHOD FOR APPLYING A THERMAL BARRIER COATING - A method and apparatus for forming thermally grown alpha alumina oxide scale on a substrate is provided. The method includes the steps of: a) providing a heating chamber having a heat source and an oxidizing gas source selectively operable to provide a stream of oxidizing gas; b) providing at least one substrate disposed in the heating chamber, which substrate has a composition sufficient to permit formation of an alpha alumina scale on one or more surfaces; c) maintaining a vacuum in the heating chamber at a level that inhibits formation of one or more low temperature oxides on the one or more surfaces of the substrate; d) heating at least one of the one or more surfaces of the substrate to a predetermined temperature at or above 1800 degrees Fahrenheit; and e) directing the stream of oxidizing gas at a controlled rate toward one or more heated surfaces of the substrate. | 09-08-2011 |
20110217465 | SHIELDS FOR SUBSTRATE PROCESSING SYSTEMS - A shielding system for a physical vapor deposition (PVD) chamber is disclosed. The PVD chamber includes a pedestal supporting a substrate. The shielding system includes a first annular portion and a second annular portion of a pedestal shield. The first annular portion is attached the pedestal at a first location. The first annular portion is located at or below a plane including the substrate. The second annular portion is attached to the pedestal at a second location that is below the first location. The first annular portion is spaced a predetermined distance from the second annular portion and is electrically isolated from the second annular portion. | 09-08-2011 |
20110217466 | APPARATUS AND METHODS FOR CHEMICAL VAPOR DEPOSITION - Methods and apparatus are disclosed for the formation of vaporizing liquid precursor materials. The methods or apparatus can be used as part of a chemical vapor deposition apparatus or system, for example for forming films on substrates. The methods and apparatus involve providing a vessel for containing a liquid precursor and diffusing element having external cross-section dimensions substantially equal to the internal cross-sectional dimensions of the vessel. | 09-08-2011 |
20110223332 | METHOD FOR DEPOSITING CUBIC BORON NITRIDE THIN FILM - The present invention relates to a method for depositing a cBN thin film on a substrate to obtain an abrasive material by physical vapor deposition carried out under an atmosphere composed of an inert gas and hydrogen. The abrasive produced by the inventive method comprises the cBN thin film attached firmly to the substrate, which has excellent hardness and durability. | 09-15-2011 |
20110244128 | FLOW PLATE UTILIZATION IN FILAMENT ASSISTED CHEMICAL VAPOR DEPOSITION - A filament assisted chemical vapor deposition (FACVD) system. The FACVD system includes a gas distribution assembly, heater filament assembly, and a flow plate that is disposed between the gas distribution assembly and the heater filament assembly. The heater filament assembly and the flow plate have a corresponding extent across a dimension of the reactor and are separated by different distances across that extent. | 10-06-2011 |
20110256314 | METHODS FOR DEPOSITION OF GROUP 4 METAL CONTAINING FILMS - A method for forming metal-containing films by atomic layer deposition using precursors of the formula: | 10-20-2011 |
20110274836 | REMOVAL OF TRAPPED SILICON WITH A CLEANING GAS - Embodiments of the present invention relate to apparatus and methods of preventing build-up of explosive material in vacuum forelines of deposition systems. A cleaning gas such as nitrogen trifluoride (NF | 11-10-2011 |
20110274837 | ALD REACTOR, METHOD FOR LOADING ALD REACTOR, AND PRODUCTION LINE - An ALD reactor for treating one or more substrates is provided. The ALD reactor includes at least one reaction chamber which has a front plate including gas connections for introducing starting materials, flushing gases and the like gases into the reaction chamber. In addition, the front plate is arranged for being placed over the substrate for closing the reaction chamber and at distance from the substrate surface for opening the reaction chamber such that the substrate is arranged for being loaded below, above or in front of the front plate, when the reaction chamber is in the open state, in which the front plate is at a distance from the substrate and such that the substrate is treatable by the ALD method in the closed state of the reaction chamber, in which the front plate is placed onto the substrate. | 11-10-2011 |
20110305831 | Method for chemical vapor deposition control - A method of depositing a thin film on a substrate in a deposition system is described. The method includes disposing a gas heating device comprising a plurality of heating element zones in a deposition system, and independently controlling a temperature of each of the plurality of heating element zones, wherein each of the plurality of heating element zones having one or more resistive heating elements. Additionally, the method includes providing a substrate on a substrate holder in the deposition system, wherein the substrate holder has one or more temperature control zones. The method further includes providing a film forming composition to the gas heating device coupled to the deposition system, pyrolyzing one or more constituents of the film forming composition using the gas heating device, and introducing the film forming composition to the substrate in the deposition system to deposit a thin film on the substrate. | 12-15-2011 |
20120009347 | PRECISE TEMPERATURE CONTROL FOR TEOS APPLICATION BY HEAT TRANSFER FLUID - Embodiments of the invention generally provide a mixing block for mixing precursors and/or cleaning agent which has the advantage of maintaining the temperature and improving the mixing effect of the precursors, cleaning agent or the mixture thereof to eliminate the substrate-to-substrate variation, thereby providing improved process uniformity. | 01-12-2012 |
20120015104 | Method and Apparatus for Depositing LED Organic Film - In one embodiment the disclosure relates to an apparatus for depositing an organic material on a substrate, including a source heater for heating organic particles to form suspended organic particles; a transport stream for delivering the suspended organic particles to a discharge nozzle, the discharge nozzle having a plurality of micro-pores, the micro-pores providing a conduit for passage of the suspended organic particles; and a nozzle heater for pulsatingly heating the micro-pores nozzle to discharge the suspended organic particles from the discharge nozzle. | 01-19-2012 |
20120015105 | METHOD OF CVD-DEPOSITING A FILM HAVING A SUBSTANTIALLY UNIFORM FILM THICKNESS - Method of depositing a film having a substantially uniform thickness by means of chemical vapor deposition, comprising:
| 01-19-2012 |
20120015106 | METHOD AND APPARATUS FOR COATING - The invention relates to a method and an apparatus for coating one or more objects ( | 01-19-2012 |
20120021126 | Vacuum Vapor Coating Device for Coating a Substrate - A vacuum vapor coating device for coating a substrate with a coating material, the vacuum vapor coating device comprising a chamber ( | 01-26-2012 |
20120021127 | MATERIAL FOR CHEMICAL VAPOR DEPOSITION AND PROCESS FOR FORMING SILICON-CONTAINING THIN FILM USING SAME - A material for chemical vapor deposition containing an organic silicon-containing compound represented by formula: HSiCl(NR | 01-26-2012 |
20120034378 | Delivery device and method of use thereof - A delivery device comprises an inlet port and an outlet port. The delivery device comprises an inlet chamber and an outlet chamber, with the outlet chamber being opposedly disposed to the inlet chamber and in fluid communication with the inlet chamber via a conical section. The outlet chamber comprises a labyrinth that is operative to prevent solid particles of a solid precursor compound contained in the delivery device from leaving the delivery device while at the same time permitting vapors of the solid precursor compound to leave the delivery device via the outlet port. | 02-09-2012 |
20120034379 | COATING METHOD - A coating method includes following steps. A workpiece having a flat surface is provided. The surface includes a coating region and a pattern region. A tape mask having a through hole, whose shape and size conforms to the pattern region, is attached onto the flat surface of workpiece to cover the coating region, thus exposing the pattern region. A screen printing stencil is placed on the tape mask. Ink is spread over the screen printing stencil printing stencil, and squeezed into the through hole over the pattern region. The ink is solidified. The tape mask is removed from the workpiece. A metallic coating is formed on the coating region of the flat surface and the solidified ink on the pattern region is removed. | 02-09-2012 |
20120040095 | Vapor Deposition of Anti-Stiction Layer for Micromechanical Devices - A vapor deposition system includes a filter-diffuser device connected to a vapor inlet within a vacuum chamber for simultaneously filtering inflowing vapor to remove particulate matter while injecting vapor containing perfluordecanoic acid (PFDA) into the chamber through radially arranged porous metal filters to enable the deposition of a uniform monolayer of PFDA molecules onto the surfaces of a micromechanical device, such as a digital micromirror device. | 02-16-2012 |
20120045581 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A hydrophobizing agent is supplied to a substrate and a surface of the substrate is hydrophobized. Thereafter, the substrate is dried. The substrate to be processed is maintained in a state of not contacting water until it is dried after being hydrophobized. Collapse of a pattern formed on the substrate surface is thereby suppressed or prevented. | 02-23-2012 |
20120064245 | ALD SYSTEMS AND METHODS - A gas deposition system ( | 03-15-2012 |
20120070577 | FILM-FORMING APPARATUS AND FILM-FORMING METHOD - A film-forming apparatus and film-forming method is provided that includes a reflector system capable of adjusting the temperature distribution of a substrate. The essential role of a reflector is to reduce the output of a heater by reflecting radiation heat from the heater and to protect members provided below the heater from heat. When a silicon wafer is heated by a first heater and a second heater, the temperature of the silicon wafer becomes higher in the inner circumferential part of the wafer rather than in the outer circumferential part of the silicon wafer. When a ring-shaped reflector is used, radiation heat is reflected by the ring-shaped portion, but is not reflected by the inner circumferential part of the reflector. Therefore, the use of a ring-shaped reflector makes it possible to allow a wafer to have an even heating distribution. | 03-22-2012 |
20120076935 | METHOD AND APPARATUS FOR MULTIPLE-CHANNEL PULSE GAS DELIVERY SYSTEM - A pulse gas delivery system for delivering a sequence of pulses of prescribed amounts of gases to a process tool, comprises: (a) a plurality of channels, each including (i) a gas delivery chamber; (ii) an inlet valve connected so as to control gas flowing into the corresponding gas delivery chamber; and (iii) an outlet valve connected so as to control the amount of gas flowing out of the corresponding gas delivery chamber; and (b) a dedicated multiple channel controller configured so as to control the inlet and outlet valves of each of the channels so that pulses of gases in prescribed amounts can be provided to the process tool in a predetermined sequence in accordance with a pulse gas delivery process. | 03-29-2012 |
20120076936 | SUBSTRATE PROCESSING APPARATUS, GAS NOZZLE AND METHOD OF PROCESSING SUBSTRATE - Provided are a substrate processing apparatus, a gas nozzle, and a method of processing a substrate, which is capable of improving heating efficiency of a gas without increasing a size of a reaction container. A gas supply nozzle | 03-29-2012 |
20120076937 | FILM DEPOSITION DEVICE AND FILM DEPOSITION METHOD - A film deposition device includes a chamber, a turntable, a first reactive gas supplying portion, a second reactive gas supplying portion, and a separation gas supplying portion. A convex part includes a ceiling surface to cover both sides of the separation gas supplying portion, form a first space between the ceiling surface and the turntable where a separation gas flows, and form a separation area between a first area and a second area, to maintain a pressure in the first space to be higher than pressures in the first area and the second area so that a first reactive gas and a second reactive gas are separated by the separation gas in the separation area. A block member is arranged to form a second space between the turntable and an internal surface of the chamber at an upstream part of the separation area along a rotation direction of the turntable. | 03-29-2012 |
20120107501 | COATING DEVICE AND COATING METHOD - A coating installation containing at least one recipient which can be evacuated and which is provided to receive a substrate, at least one gas supply device which can introduce at least one gaseous precursor into the recipient, and at least one activation device which contains at least one heatable activation element, the end thereof being secured to a securing point on a support element. In the related method, the activation element can be heated by at least one first heating device and at least one second heating device, the first heating device enabling energy to be input in a uniform manner over the longitudinal extension of the activation element and the second heating device enabling energy to be input in a changeable manner over the longitudinal extension of the activation element such that the temperature of the activation element, in at least one longitudinal section, can be brought to over 1300° C. due to the effect of the second heating element. | 05-03-2012 |
20120114854 | VACUUM PROCESSING APPARATUS AND VACUUM PROCESSING METHOD - A vacuum processing apparatus has a degassing chamber and does not need a large-sized vacuum evacuation device. In the process of heating and degassing an object to be processed in the degassing chamber, transferring the object to be processed into a processing chamber through a buffer chamber; and performing vacuum processing, the degassing chamber is connected to an vacuum evacuation system having a low evacuation speed and degassing processing is performed in a vacuum atmosphere of 1 to 100 Pa (time 0 to t | 05-10-2012 |
20120114855 | COATING INSTALLATION AND COATING METHOD - A coating method can use a coating device containing at least one recipient which can be evacuated and which is adapted to accommodate a substrate, at least one gas supply device which is used to introduce at least one gaseous precursor into the recipient and at least one heatable activation element which has a definable longitudinal extension and which is fastened by means of at least one associated mechanical fastening device. Electric current can be supplied to the activation element via at least two contact elements and the contact elements are fastened so as to be virtually immobile relative to the recipient. The activation element is arranged so as to be mobile relative to the recipient. | 05-10-2012 |
20120135143 | DEVICE AND METHOD FOR COATING A MICRO- AND/OR NANO-STRUCTURED STRUCTURAL SUBSTRATE AND COATED STRUCTURAL SUBSTRATE - The present invention relates to a device and a method for coating a microstructured and/or nanostructured structured substrate. According to the present invention, the coating is performed in a vacuum chamber. The pressure level in the vacuum chamber is elevated during or after the charging of the vacuum chamber with coating substance. | 05-31-2012 |
20120135144 | COATING DEVICE AND COATING METHOD - A coating installation includes at least one recipient which can be evacuated and which is provided to receive a substrate, at least one gas supply device which can introduce at least one gaseous precursor into the recipient, and at least one activation device which contains at least one heatable activation element, the end thereof being secured to a securing point on a support element. A shielding element which can protect at least the securing point at least partially against the effect of the gaseous precursor is provided. The shielding element has a longitudinal extension having a first side and a second side, the first side being arranged on the support element and a locking element being arranged on the second side of the shielding element, the locking element having at least one outlet. At least one separation wall is arranged inside the shielding element, the wall separating the inner volume of the shielding element into a first partial volume and into a second partial volume. | 05-31-2012 |
20120135145 | SUBSTRATE-PROCESSING APPARATUS AND SUBSTRATE-PROCESSING METHOD FOR SELECTIVELY INSERTING DIFFUSION PLATES - According to one embodiment of the present invention, a substrate-processing apparatus comprises: a lower chamber with an open top; an upper chamber which covers the top of the lower chamber, and which cooperates with the lower chamber to form an internal space for substrate-processing; a shower head arranged in a lower portion of the upper chamber to supply reaction gas to the internal space, and forming a buffer space between the shower head and the upper chamber; a gas supply port formed in the upper chamber to supply reaction gas to the buffer space; and a diffusion unit arranged in the buffer space to diffuse the reaction gas supplied through the gas supply port. The diffusion unit includes: a plurality of diffusion areas which are blocked from each other, in order to enable the reaction gas to be diffused therein; a plurality of diffusion holes for placing the gas supply port and the diffusion areas in communication; and one or more diffusion plates, the shapes of which correspond to the shapes of the diffusion areas, and which are selectively inserted into the respective diffusion areas. | 05-31-2012 |
20120141674 | EVAPORATOR AND METHOD FOR DEPOSITING ORGANIC MATERIAL - An evaporator for depositing material on a substrate includes a crucible configured to receive a deposition material, and a plurality of nozzles in fluid communication with the crucible and facing the substrate, the nozzles projecting away from the crucible and being arranged in a first direction along the crucible, at least two of the nozzles being inclined with respect to a normal to the substrate. | 06-07-2012 |
20120141675 | PRECURSOR COMPOSITIONS FOR ATOMIC LAYER DEPOSITION AND CHEMICAL VAPOR DEPOSITION OF TITANATE, LANTHANATE, AND TANTALATE DIELECTRIC FILMS - Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp) | 06-07-2012 |
20120148742 | COMBINATORIAL SITE-ISOLATED DEPOSITION OF THIN FILMS FROM A LIQUID SOURCE - An apparatus for combinatorial site-isolated thin film deposition may include a source of a liquid precursor, a nebulizer configured to convert the liquid precursor to an aerosolized mist of particles, a first deposition cell configured to direct an aerosolized mist of particles onto a first selected region of the substrate, and a second deposition cell configured to direct an aerosolized mist of particles onto a second selected region of the substrate. A method for combinatorial site-isolated thin film deposition may include providing a liquid precursor, converting the liquid precursor to an aerosolized mist of particles, transporting the aerosolized mist of particles to a first deposition cell and a second deposition cell in proximity to a surface of a substrate, and depositing the transported aerosolized mist of particles onto a first selected region and a second selected region of the surface of the substrate. | 06-14-2012 |
20120148743 | METHOD AND APPARATUS FOR DEPOSITING LED ORGANIC FILM - In one embodiment the disclosure relates to an apparatus for depositing an organic material on a substrate, including a source heater for heating organic particles to form suspended organic particles; a transport stream for delivering the suspended organic particles to a discharge nozzle, the discharge nozzle having a plurality of micro-pores, the micro-pores providing a conduit for passage of the suspended organic particles; and a nozzle heater for pulsatingly heating the micro-pores nozzle to discharge the suspended organic particles from the discharge nozzle. | 06-14-2012 |
20120156372 | Nozzle-based, Vapor-phase, Plume Delivery Structure for Use in Production of Thin-film Deposition Layer - A physical vapor deposition effusion method comprising translating a strip material through a physical vapor deposition zone in a deposition chamber and providing first and second substantially closed vessels located serially along the processing path in the same deposition chamber, each vessel emitting different source materials to produce overlapping plumes and having an array of vapor delivery nozzles distributed uniformly across the vessel along the width of the zone, and configured to expel overlapping plumes to create a fog having a substantially uniform composition across the width and a varying composition across the length of the zone. Also, an elongate vapor deposition effusion vessel having an elongate lid including plural nozzles spaced from each other along its elongate axis, and a continuous heating element in the lid encircling the plural nozzles, the heating element having electrical contacts connected to an electrical source on the same side of the vessel. | 06-21-2012 |
20120164326 | COATING DEPOSITION APPARATUS AND METHOD THEREFOR - A coating deposition apparatus includes a plurality of mounts that are adapted to mount work pieces at respective work piece locations. A crucible is located adjacent the plurality of mounts for emitting a source coating material. A plurality of gas nozzles are respectively directed at the work piece locations to scatter the emitted source coating material at surfaces of the work pieces that are otherwise difficult to coat. | 06-28-2012 |
20120164327 | FILM-FORMING METHOD AND FILM-FORMING APPARATUS FOR FORMING SILICON OXIDE FILM ON TUNGSTEN FILM OR TUNGSTEN OXIDE FILM - A film-forming method includes forming a tungsten film or a tungsten oxide film on an object to be processed, forming a seed layer on the tungsten film or the tungsten oxide film, and forming a silicon oxide film on the seed layer, wherein the seed layer formed on the tungsten film or the tungsten oxide film is formed by heating the object to be processed and supplying an aminosilane-based gas to a surface of the tungsten film or the tungsten oxide film. | 06-28-2012 |
20120171375 | METHOD OF DENSIFYING THIN POROUS SUBSTRATES BY CHEMICAL VAPOR INFILTRATION, AND A LOADING DEVICE FOR SUCH SUBSTRATES - To densify thin porous substrates ( | 07-05-2012 |
20120207926 | Combined Injection Module For Sequentially Injecting Source Precursor And Reactant Precursor - Performing atomic layer deposition using a combined injector that sequentially injects source precursor and reactant precursor onto a substrate. The source precursor is injected into the injector via a first channel, injected onto the substrate and then discharged through a first exhaust portion. The reactant precursor is then injected into the injector via a second channel separate from the first channel, injected onto the substrate and then discharged through a second exhaust portion separate from the first exhaust portion. After injecting the source precursor or the reactant precursor, a purge gas may be injected into the injector and discharged to remove any source precursor or reactant precursor remaining in paths from the first or second channel to the first or second exhaust portion. | 08-16-2012 |
20120213927 | SURFACE COATING METHOD AND DEVICE FOR EXTERIOR PART - A surface coating method for an exterior part includes positioning one or more exterior part preforms, which are objects to be surface-coated, within a deposition chamber capable of revolution and rotation; positioning one or more tablets containing a coating component on an evaporation device installed within an area surrounded by the revolution trace of the exterior part preforms; and depositing a coating layer to a surface of each of the exterior part preforms by evaporating the tablets while revolving and rotating the exterior part preforms. The surface coating method and device conduct the rotation and revolution of objects to be coated in while proceeding with a coating step, whereby an evaporated coating component can be uniformly diffused over the entire deposition chamber, and a uniform coating layer can be formed on the entire surface of each of the objects to be coated. | 08-23-2012 |
20120219710 | METHOD OF FORMING TITANIUM NITRIDE FILM, APPARATUS FOR FORMING TITANIUM NITRIDE FILM, AND PROGRAM - According to the method of forming a titanium nitride film, first, an inside of a reaction pipe accommodating a semiconductor wafer is heated up to 200° C. to 350° C. by using a temperature increasing heater. Then, the titanium nitride film is formed on the semiconductor wafer by supplying a film forming gas including a titanium raw material into the reaction pipe. Methylcyclopentadienyl tris(dimethylamino)titanium that does not include a chlorine atom and includes titanium is used as the titanium raw material. | 08-30-2012 |
20120225203 | Apparatus and Process for Atomic Layer Deposition - Provided are atomic layer deposition apparatus and methods including a gas distribution plate with a thermal element. The thermal element is capable of locally changing the temperature of a portion of the surface of the substrate by temporarily raising or lowering the temperature. | 09-06-2012 |
20120225204 | Apparatus and Process for Atomic Layer Deposition - Provided are atomic layer deposition apparatus and methods including multiple gas distribution plates including stages for moving substrates between the gas distribution plates. | 09-06-2012 |
20120225205 | EVAPORATION METHOD, EVAPORATION DEVICE AND METHOD OF FABRICATING LIGHT EMITTING DEVICE - The invention provides an evaporation apparatus, which is able to improve an efficiency of evaporation materials, uniformity of deposited films, and throughput of the evaporation process. Disclosed is an evaporation source holder, which is installed in an evaporation chamber and configured to hold an evaporation material, and a moving mechanism, which is configured to move the evaporation source holder during evaporation of the evaporation material. The evaporation apparatus is further characterized by a shutter over the evaporation source holder, a filter over the shutter, and a heater surrounding the filter. | 09-06-2012 |
20120237678 | Tool For Harvesting Polycrystalline Silicon-coated Rods From A Chemical Vapor Deposition Reactor - A tool for harvesting polycrystalline silicon-coated rods from a chemical vapor deposition reactor includes a body including outer walls sized for enclosing the rods within the outer walls. Each outer wall includes a door for allowing access to at least one of the rods. | 09-20-2012 |
20120237679 | APPARATUS AND METHODS FOR DEPOSITING ONE OR MORE ORGANIC MATERIALS ON A SUBSTRATE - Embodiments are disclosed of apparatus and methods for depositing one or more organic materials onto a substrate. One or more thin films can thereby be formed. The organic materials can be those employed in organic LED (OLED) technologies. | 09-20-2012 |
20120251720 | VAPOR COLLECTION - An apparatus for collecting condensed vapor during physical vapor deposition includes an enclosure configured to be placed adjacent to one or more vapor sources in a vacuum chamber. The enclosure includes an internal surface of the enclosure partially enclosing a volume of space configured to receive an object wherein the enclosure is maintained at a cooler temperature than the one or more vapor sources. The internal surface of the enclosure is coupled to one or more drainage gutters drainage drainage gutters. | 10-04-2012 |
20120251721 | DEVICE AND METHOD FOR FORMING FILM - The present disclosure relates to a film forming apparatus for forming a thin film on a surface of an object to be processed by using an organic metal raw material gas within a processing chamber configured to exhaust air, wherein a hydrophobic layer is installed on a surface of a member exposed to the atmosphere within the processing chamber. | 10-04-2012 |
20120251722 | DEVICE AND METHOD FOR THERMAL EVAPORATION OF SILICON - An evaporator cell ( | 10-04-2012 |
20120251723 | METHOD OF CLEANING FILM FORMING APPARATUS, FILM FORMING METHOD, AND FILM FORMING APPARATUS - Plasma is generated on the first condition between a cathode electrode and an anode electrode. Then, plasma is generated on the second condition different from the first condition. The second condition is for spreading plasma between the cathode electrode and the anode electrode in the outer peripheral direction as compared with the first condition. Accordingly, in addition to a deposit on the electrode, a deposit on the member provided in the vicinity of the outer periphery of the electrode can be immediately removed. | 10-04-2012 |
20120263875 | Method and Apparatus For Depositing A Material Layer Originating From Process Gas On A Substrate Wafer - An apparatus for depositing a material layer originating from process gas on a substrate wafer, contains:
| 10-18-2012 |
20120276291 | Methods and Apparatuses for Reducing Gelation of Glass Precursor Materials During Vaporization - Methods and apparatuses for vaporizing liquid precursor material for use in a vapor deposition process are disclosed. The method for vaporizing liquid precursor material includes introducing a flow of liquid precursor material into an expansion chamber and directing the flow of liquid precursor material towards a wall of the chamber. The wall of the chamber is heated to a temperature sufficient to vaporize a first portion of the flow of liquid precursor material while a second portion of the flow of liquid precursor material remains in a liquid state and a third portion of the liquid precursor material is formed into gel. The expansion chamber is continuously drained as the flow of liquid precursor material is introduced into the expansion chamber. The chamber is heated to a temperature to produce a sufficient amount of the second portion of the liquid precursor material to flush the gel from the chamber. | 11-01-2012 |
20120301613 | DEVICE AND METHOD FOR COATING ELONGATE OBJECTS - A device for coating an exterior of an elongate object includes a housing structure with an elongate chamber having first and second opposite ends. A port communicates with the first end for receiving the elongate object and an outlet is located at the second end. An air supply passage and a coating material supply passage communicate with the elongate chamber. Pressurized air and coating material are adapted to enter the elongate chamber through the air supply passage and the coating material supply passage, respectively, to form a mist in the elongate chamber moving toward the outlet while coating the exterior of the object. A method of coating an exterior surface of the elongate object with the coating material includes holding the elongate object lengthwise in the elongate chamber, mixing the pressurized air and the coating material to form a mist, and coating the exterior surface while directing the mist around the exterior surface and toward the outlet of the elongate chamber. | 11-29-2012 |
20130011556 | CRUCIBLE, VAPOR DEPOSITION SYSTEM AND METHOD USING THE CRUCIBLE - A crucible includes a main body and a cover. The main body includes a first end surface, an opposite second end surface, a hollow part and a solid part. The hollow part and the solid part extend from the first end surface to the second end surface. The hollow part defines a receiving space. The first end surface defines an opening communicating with the receiving space, and includes a step positioned between the hollow part and the solid part. The solid part includes a heat end adjacent to the step. The heat end is heated by an electro-beam. The cover covers the opening, and defines a number of gas holes. The main body and the cover are made of thermal conductive refractory material. | 01-10-2013 |
20130022743 | VAPOR GROWTH APPARATUS AND VAPOR GROWTH METHOD - A vapor growth apparatus according to an aspect of the present invention includes a reaction chamber into which a wafer is loaded, a first valve which is connected to the reaction chamber and controls a flow rate of a first exhaust gas discharged from the reaction chamber, a first pump which is provided on a downstream side of the first valve and discharges the first exhaust gas, a first pressure gauge which detects a first pressure that is a pressure of the reaction chamber, a first pressure control unit which controls the first valve based on the first pressure, a second pressure gauge which detects a second pressure that is a pressure between the first valve and the first pump, and a second pressure control unit which controls an operation volume of the first pump based on the first pressure and the second pressure. | 01-24-2013 |
20130029042 | Atomic Layer Deposition Apparatus And Loading Methods - The invention relates to methods and apparatus in which a plurality of ALD reactors are placed in a pattern in relation to each other, each ALD reactor being configured to receive a batch of substrates for ALD processing, and each ALD reactor comprising a reaction chamber accessible from the top. A plurality of loading sequences is performed with a loading robot. Each loading sequence comprises picking up a substrate holder carrying a batch of substrates in a storage area or shelf, and moving said substrate holder with said batch of substrates into the reaction chamber of the ALD reactor in question. | 01-31-2013 |
20130040054 | COATING DEVICE AND METHOD FOR OPERATING A COATING DEVICE HAVING A SHIELDING PLATE - A device for treating a substrate ( | 02-14-2013 |
20130052346 | CVD REACTOR WITH GAS FLOW VIRTUAL WALLS - A chemical vapor deposition reactor has one or more deposition zones bounded by gas flow virtual walls, within a housing having closed walls. Each deposition zone supports chemical vapor deposition onto a substrate. Virtual walls formed of gas flows laterally surround the deposition zone, including a first gas flow of reactant gas from within the deposition zone and a second gas flow of non-reactant gas from a region laterally external to the deposition zone. The first and second gas flows are mutually pressure balanced to form the virtual walls. The virtual walls are formed by merging of gas flows at the boundary of each deposition zone. The housing has an exhaust valve to prevent pressure differences or pressure build up that would destabilize the virtual walls. Cross-contamination is reduced, between the deposition zones and the closed walls of the housing or an interior region of the housing outside the gas flow virtual walls. | 02-28-2013 |
20130064973 | Chamber Conditioning Method - A system and method for conditioning a chamber is disclosed. An embodiment comprises utilizing the deposition chamber to deposit a first layer and conditioning the deposition chamber. The conditioning the deposition chamber can be performed by depositing a heterogeneous material over the first layer. The heterogeneous material can cover and encapsulate the first layer, thereby preventing particles of the first layer from breaking off and potentially landing on a substrate during a subsequent processing run. | 03-14-2013 |
20130064974 | METHODS AND APPARATUSES FOR CONVERTING EXPANDED POLYSTYRENE INTO A RIGID MATERIAL - Methods and apparatuses for converting expanded polystyrene into a rigid material are disclosed herein. The methods of modifying EPS herein generally include placing EPS workload into a pressurized chamber and applying heat and pressure through a gas. The application of heat and pressure is held for a determined amount of time, the pressure of the internal chamber is then lowered below atmospheric pressure and a hot or cool step is administered. The resulting CPS product can be modified in a multiple number of ways depending on the desired end product. | 03-14-2013 |
20130064975 | VAPOR TRANSPORT DEPOSITION SYSTEM AND METHOD EMPLOYING REMOVABLE SHIELDS - A method and system includes removable shields arranged inside a deposition chamber to prevent vaporized material from accumulating on the walls of the chamber. The removable shields can be removed for cleaning. | 03-14-2013 |
20130064976 | Method for liquid precursor atomization - A method for atomizing a precursor liquid for vapor generation and thin film deposition on a substrate. The precursor liquid is atomized by a carrier gas to form a droplet aerosol comprised of small precursor liquid droplets suspended in the carrier gas. The droplet aerosol is then heated to form vapor, producing a gas/vapor mixture that can be introduced into a deposition chamber to form thin films on a substrate. The liquid is introduced into the atomizing apparatus in such a manner as to avoid excessive heating that can occur or lead to the formation of undesirable by-products due to material degradation as result of thermal decomposition. The method is particularly suited for vaporizing high molecular weight substances with a low vapor pressure that requires a high vaporization temperature for the liquid to vaporize. The method can also be used to vaporize solid precursors dissolved in a solvent for vaporization. | 03-14-2013 |
20130071564 | GRAPHENE DEFECT ALTERATION - Technologies are generally described for a method and system configured effective to alter a defect area in a layer on a substrate including graphene. An example method may include receiving and heating the layer to produce a heated layer and exposing the heated layer to a first gas to produce a first exposed layer, where the first gas may include an amine. The method may further include exposing the first exposed layer to a first inert gas to produce a second exposed layer and exposing the second exposed layer to a second gas to produce a third exposed layer where the second gas may include an alane or a borane. Exposure of the second exposed layer to the second gas may at least partially alter the defect area. | 03-21-2013 |
20130078375 | DEPOSITION SOURCE INTEGRATION INTO COATER - An improved deposition source configuration in a process chamber can reduce the overheating in a thin film deposition system. | 03-28-2013 |
20130084389 | METHOD AND CERAMIC COMPONENT - A method of fabricating a ceramic component includes using vapor infiltration to deposit a ceramic coating within pores of a porous structure to form a preform body with residual interconnected porosity. Transfer molding is then used to deposit a heated, liquid glass or glass/ceramic material into the residual interconnected porosity. The liquid ceramic or ceramic/glass material is then solidified to form a ceramic component. | 04-04-2013 |
20130084390 | FILM-FORMING APPARATUS AND FILM-FORMING METHOD - A film-forming apparatus and film-forming method comprising a film-forming chamber for being supplied a reaction gas, a substrate placed on a susceptor in the film-forming chamber, a heater for heating the substrate, a transfer chamber adjacent to the film-forming chamber, transferring the substrate to the film-forming chamber, measuring the temperature of the substrate, rotating the substrate via the susceptor, a detecting unit for detecting rotating direction and angle of the rotating unit, generating data of the substrate using temperature data of the substrate measured by the temperature-measuring unit while the substrate is rotating, and positional data of coordinates at which temperature is measured, generated based on the rotating direction and angle, acquiring data of the movement direction and amount of positional error of the substrate based on the data, a control unit for adjusting position of the transfer unit based on the amount of position error of the substrate. | 04-04-2013 |
20130089665 | SELF-LIMITING REACTION DEPOSITION APPARATUS AND SELF-LIMITING REACTION DEPOSITION METHOD - A self-limiting reaction deposition apparatus includes a first guide roller, a second guide roller, and at least one first head. The first guide roller changes, while supporting a first surface of a base material conveyed by a roll-to-roll process, a conveying direction of the base material from a first direction to a second direction that is not parallel to the first direction. The second guide roller changes, while supporting the first surface of the base material, the conveying direction of the base material from the second direction to a third direction that is not parallel to the second direction. The at least one first head is disposed between the first guide roller and the second guide roller, faces a second surface opposite to the first surface of the base material, and discharges, towards the second surface, a raw material gas for self-limiting reaction deposition. | 04-11-2013 |
20130095242 | Continuous Deposition System - The invention discloses a method and system for continuous deposition of thin films by chemical vapor reaction for the purposes of semiconductor device fabrication; in some embodiments a device is a photovoltaic device. | 04-18-2013 |
20130108788 | VAPOR-PHASE PROCESS APPARATUS, VAPOR-PHASE PROCESS METHOD, AND SUBSTRATE | 05-02-2013 |
20130115372 | HIGH EMISSIVITY DISTRIBUTION PLATE IN VAPOR DEPOSITION APPARATUS AND PROCESSES - Apparatus and processes for vapor deposition of a sublimated source material as a thin film on a substrate are provided. The apparatus can include a deposition head; a receptacle disposed in the deposition head and configured for receipt of a source material; a heated distribution manifold disposed below the receptacle and configured to heat the receptacle to a degree sufficient to sublimate the source material within the receptacle; and, a deposition plate disposed below the distribution manifold and at a defined distance above a horizontal conveyance plane of an upper surface of a substrate conveyed through the apparatus. The distribution plate can define a pattern of passages therethrough that further distribute the sublimated source material passing through the distribution manifold. The distribution plate can have an emissivity in a range of about 0.7 to a theoretical maximum of 1.0 at a plate temperature during deposition. | 05-09-2013 |
20130122197 | SECURING OF SHADOW MASK AND SUBSTRATE ON SUSCEPTOR OF DEPOSITION APPARATUS - Embodiments relate to a structure for securing a shadow mask and a susceptor where the top surface of the shadow mask mounted with the susceptor is flush with the top surface of the susceptor. When the susceptor is mounted with the shadow mask, the entire top surface of the susceptor and the shadow mask is substantially coplanar. A substrate onto which material is deposited is placed below the shadow mask. The susceptor moves below reactors for injecting materials or radicals. Since the entire top surface of the susceptor is substantially flat, the vertical distance between the reactors and the susceptor can be reduced, contributing to the overall quality of the layer formed on the substrate and reducing the materials wasted by leaking outside the gap between the susceptor and the reactors. | 05-16-2013 |
20130149445 | METHOD FOR PRODUCING A STRONG BOND BETWEEN A POLYMER SUBSTRATE AND AN INORGANIC LAYER - The invention relates to a method for producing a firm bond between a polymer substrate and an inorganic layer, wherein the substrate surface is exposed to a precursor before the deposition of the inorganic layer which is to be produced by means of a PVD process. | 06-13-2013 |
20130149446 | NOZZLE HEAD AND APPARATUS - Described herein is an apparatus and nozzle head for coating a surface of a substrate. The apparatus comprising a process chamber having inside a gas atmosphere, a nozzle head arranged inside the process chamber, precursor supply and discharge means. The nozzle head including one or more first precursor nozzles for subjecting the surface of the substrate to the first precursor, one or more second precursor nozzles for subjecting the surface of the substrate to the second precursor and one or more purge gas channels between the first and second precursor zones. In certain aspects, the purge gas channel is at least partly open to the gas atmosphere comprising purge gas for subjecting the surface of the substrate to purge gas. | 06-13-2013 |
20130156950 | FILM-FORMING APPARATUS AND FILM-FORMING METHOD - A film-forming apparatus | 06-20-2013 |
20130171348 | THIN FILM DEPOSITION APPARATUS AND METHOD FOR USING THE SAME - A thin film deposition apparatus and a using method thereof are disclosed. The apparatus includes a preheating chamber, a reacting chamber, a cooling chamber, and at least one transmission module. The preheating chamber is configured for preheating the substrate. The reacting chamber is configured for receiving the substrate being preheated and transferred from the preheating chamber, heating the substrate to a working temperature, depositing a thin film on the substrate under the working temperature, and cooling the substrate being deposited to a temperature lower than the working temperature. The cooling chamber is configured for receiving the substrate being deposited and transferred from the reacting chamber and further cooling the substrate. The transmission module is configured for transferring the substrate between the preheating chamber, the reacting chamber, and the cooling chamber. | 07-04-2013 |
20130183443 | PROCESSING APPARATUS AND VALVE OPERATION CHECKING METHOD - A processing apparatus includes a processing chamber configured to accommodate a target object to be processed, gas supply paths provided in a corresponding relationship with the kinds of process gases supplied into the processing chamber, and valves respectively arranged in the gas supply paths to open and close the gas supply paths. The processing apparatus further includes valve drive units configured to independently drive the valves, sensor units configured to independently monitor opening and closing operations of the valves, and a control unit configured to determine operation statuses of the valves based on valve opening and closing drive signals transmitted to the valve drive units and/or valve opening and closing detection signals transmitted from the sensor units. | 07-18-2013 |
20130183444 | Apparatus and Methods for Deposition Reactors - An apparatus, such as an ALD (Atomic Layer Deposition) apparatus, including a precursor source configured for depositing material on a heated substrate in a deposition reactor by sequential self-saturating surface reactions. The apparatus includes an in-feed line for feeding precursor vapor from the precursor source to a reaction chamber and a structure configured for utilizing heat from a reaction chamber heater for preventing condensation of precursor vapor into liquid or solid phase between the precursor source and the reaction chamber. Also various other apparatus and methods are presented. | 07-18-2013 |
20130216708 | PRECURSOR EVAPORATORS AND METHODS OF FORMING LAYERS USING THE SAME - An evaporator includes a main body, an evaporation space therein, a precursor inlet through which a precursor is provided into a portion of the first evaporation space, a carrier gas inlet through which a carrier gas is provided thereinto, and an outlet through which the precursor is emitted. The evaporation space includes a first evaporation space and a second evaporation space in communication therewith. The first evaporation space has a conical shape portion and the second evaporation space has a cylindrical shape portion. The portion of the first evaporation space into which the precursor is provided corresponds to an apex of the conical shape portion. The carrier gas inlet penetrates the main body in a substantially tangential direction with respect to a sidewall of the first evaporation space at the conical shape portion. The outlet is in fluid communication with an end portion of the second evaporation space. | 08-22-2013 |
20130216709 | Film Formation Apparatus, Method for Forming Film and Method for Cleaning Shadow Mask - A film formation apparatus that can remove a film formation material attached to a shadow mask is provided. Alternatively, a method for forming a film and a method for cleaning a shadow mask are provided. The film formation apparatus includes a film formation chamber including an evaporation source; a shadow mask transfer mechanism; and a plasma source. The shadow mask transfer mechanism includes a first mode in which a film is formed on an object to be film-formed with a film formation material ejected by the evaporation source while the object to be film-formed and a shadow mask are transferred, and a second mode in which plasma irradiation is performed by the plasma source to remove the film formation material attached to the shadow mask while the evaporation source is parted from the plasma source by a sluice valve and the shadow mask is transferred. | 08-22-2013 |
20130216710 | THIN FILM FORMING METHOD AND THIN FILM FORMING APPARATUS - [Problem] To provide a thin film production process and a thin film production device, both of which enable the production of a dielectric thin film having small surface roughness. | 08-22-2013 |
20130230651 | FILM FORMATION APPARATUS AND FILM FORMATION METHOD USING THE SAME - A film formation apparatus includes a processing chamber configured to keep an inside thereof in a decompressed state, a gas introduction path configured to introduce a predetermined source gas into the processing chamber, a catalyst provided inside the processing chamber in such a way that the source gas introduced through the gas introduction path comes into contact with a surface of the catalyst or passes near the surface thereof, a power supply unit configured to apply energy to the catalyst to heat the catalyst, a detector provided below the catalyst, and a controller configured to detect an electric current flowing through the detector or a voltage from the detector and to judge a contact state between the catalyst and the detector. | 09-05-2013 |
20130243955 | PROCESS AND APPARATUS TO TREAT METAL SURFACES - A method for treating metal parts is provided that includes positioning a metal part within a reactor chamber, and positioning a boron containing solid form having a porosity of at least 10% by volume in the reactor chamber adjacent to the metal part. A halide containing gas may be introduced to the reactor chamber that the boron containing solid form is present in. The at least one halide containing gas and the boron containing form react to provide a gas that borides the metal part. | 09-19-2013 |
20130251902 | Thin Film Depositing Apparatus and Thin Film Depositing Method Used by the Same - A thin film depositing apparatus and a thin film depositing method used by the thin film depositing apparatus. The thin film depositing apparatus includes a deposition chamber through which a process gas outlet of a deposition source is arranged; a transfer shuttle disposed in the deposition chamber, the transfer shuttle comprising a mounting plate for loading a substrate, the transfer shuttle being reciprocal with respect to the process gas outlet; and at least one bendable auxiliary plate installed at one side of the transfer shuttle, the bendable auxiliary plate closing the process gas outlet when opposite the process gas outlet, the bendable auxiliary plate comprising a folding member for placing the bendable auxiliary plate in each of an unbent state and bent state dependent upon the position of the transfer shuttle. | 09-26-2013 |
20130260034 | Scanning Injector Assembly Module for Processing Substrate - An injection module assembly (IMA) that moves along a predetermined path to inject gas onto a substrate and discharge excess gas is described. The IMA may be used for processing a substrate that is difficult to move for various reasons such as a large size and weight of the substrate. The IMA is connected to one or more sets of jointed arms with structures to provide one or more paths for injecting the gas or discharging the excess gas. The IMA is moved by a first driving mechanism (e.g., linear motor) and the jointed arms are separately operated by a second driving mechanism (e.g., pulleys and cables) to reduce force or torque caused by the weight of the jointed arms. The movement of the first driving mechanism and the second driving mechanism is synchronized to move the IMA and the jointed arms. | 10-03-2013 |
20130266727 | METHODS FOR PROVIDING PATTERNED ORIENTATION TEMPLATES FOR SELF-ASSEMBLABLE POLYMERS FOR USE IN DEVICE LITHOGRAPHY - A method is disclosed involving depositing a neutral orientation template layer onto a substrate after formation of chemical epitaxy or graphoepitaxy features on the substrate, but before deposition and orientation of a self-assemblable polymer. The orientation layer is arranged to bond with the substrate but not with certain features, so that it may be easily removed by vacuum or rinsing with organic solvent. The neutral orientation layer has a chemical affinity to match that of blocks in the self-assemblable polymer so that blocks of differing types wet the neutral orientation layer so that domains in the self-assembled polymer may lie side by side along the substrate surface, with interfaces normal to the substrate surface. The resulting aligned and oriented self-assembled polymer may itself be used as a resist for device lithography of the substrate. | 10-10-2013 |
20130273249 | EVAPORATION METHOD AND FILM DEPOSITION METHOD - Because an evaporating apparatus for use in an MOCVD film deposition system has a structure in which a plurality of gas passages brings in a gas from the upper direction, the apparatus has a difficulty to position a jet nozzle, and the apparatus is incapable of accurately controlling the pressure and flow rate of a carrier gas mixed with a raw material solution to be issued into an evaporating unit, and it is thus difficult to highly accurately control the composition of MOCVD films. A plurality of gas passages is arranged on a flat, disk-shaped plate. With this configuration, the accurate positioning of the jet nozzle can be made easier, and the composition of MOCVD films can be controlled highly accurately. | 10-17-2013 |
20130280426 | Methods Of Forming Material Over A Substrate And Methods Of Forming Capacitors - A method of forming a material over a substrate includes performing at least one iteration of the following temporally separated ALD-type sequence. First, an outermost surface of a substrate is contacted with a first precursor to chemisorb a first species onto the outermost surface from the first precursor. Second, the outermost surface is contacted with a second precursor to chemisorb a second species different from the first species onto the outermost surface from the second precursor. The first and second precursors include ligands and different central atoms. At least one of the first and second precursors includes at least two different composition ligands. The two different composition ligands are polyatomic or a lone halogen. Third, the chemisorbed first species and the chemisorbed second species are contacted with a reactant which reacts with the first species and with the second species to form a reaction product new outermost surface of the substrate. | 10-24-2013 |
20130287947 | Inverted Evaporation Apparatus - A deposition apparatus includes one or more evaporation sources each of which includes a container comprising an opening and configured to hold a source material, a source heater adjacent to and in thermal communication with the container, wherein the source heater is configured to elevate temperature of the source material to produce a vapor of the source material, and a source enclosure that encloses the container and the source heater. The source enclosure includes a vent configured to direct the vapor of the source material towards a substrate. The deposition apparatus includes also a plurality of substrate heaters in thermal communication with the substrate. The substrate includes a deposition surface configured to receive deposition of the source material by condensing the vapor. The plurality of substrate heaters can heat different portions of the substrate to different temperatures. | 10-31-2013 |
20130309401 | ATOMIC LAYER DEPOSITION APPARATUS AND ATOMIC LAYER DEPOSITION METHOD - An atomic layer deposition apparatus that forms a thin film on a substrate, the atomic layer deposition apparatus includes: a deposition vessel in which a source gas supply port and a reactant gas supply port are formed; a source gas supply part operable to supply the source gas to the source gas supply port and that includes a liquid source storage part and a vaporization controller, the liquid source storage part storing a liquid source that is a source material of the thin film, and the vaporization controller controlling a flow rate by directly vaporizing the liquid source stored in the liquid source storage part; a reactant gas supply part operable to supply a reactant gas to the reactant gas supply port, the reactant gas reacting with the source gas to form the thin film; a controller operable to control the source gas supply part and the reactant gas supply part to supply the source gas and the reactant gas alternately; a screen plate that is disposed such that the source gas supplied from the source gas supply port collides therewith; and a temperature adjuster operable to adjust a temperature at the screen plate. | 11-21-2013 |
20130316079 | Device and Process for Coating a Substrate - The invention relates to an apparatus ( | 11-28-2013 |
20130323420 | APPARATUS AND METHOD FOR ATOMIC LAYER DEPOSITION ON A SURFACE - Apparatus for atomic layer deposition on a surface of a substrate, the apparatus comprising: a deposition member; a substrate table for supporting the substrate; a first reactant injector for supplying a first reactant; a second reactant injector for supplying a second reactant; a gas injector being arranged for creating, by means of gas injected by the gas injector, a gas barrier and optionally being arranged for creating a gas bearing; a heater for heating the gas that is to be injected by the gas injector; and an additional heater for heating the deposition member and the substrate table, and for heating the substrate. The deposition member has a gas inlet for the gas that is to be injected by the gas injector. The heater is provided outside the deposition member. The gas transported from the gas inlet is heated by the heater before said gas enters the gas inlet. | 12-05-2013 |
20130323421 | FILM FORMING METHOD AND FILM FORMING DEVICE - This is to provide a film forming method, etc., which can form a film containing a high concentration of an impurity under atmospheric pressure efficiently without using a harmful and poisonous gas. The film forming method is constituted by heating a solid source such as boron and phosphorus pentaoxide, etc., and evaporating to generate a gas, and the obtained gas is jetted to the surface(s) of a preheated substrate to form a film. | 12-05-2013 |
20130330472 | SUBSTRATE CONVEYANCE ROLLER, THIN FILM MANUFACTURING DEVICE AND THIN FILM MANUFACTURING METHOD - A substrate-conveying roller | 12-12-2013 |
20130337170 | Methods and Apparatus for the Synthesis of Large Area Thin Films - The invention provides methods and apparatus for supporting a substrate in a chemical vapor deposition reactor, and methods and apparatus for synthesizing large area thin films. The invention provides a method to coil the substrate into a cylindrical shape with a buffer layer embedded so as to achieve a many-fold increase in the effective width of the substrate. The buffer layer may also provide precursors or reactants for the deposition of the thin film. | 12-19-2013 |
20130337171 | N2 PURGED O-RING FOR CHAMBER IN CHAMBER ALD SYSTEM - This disclosure provides systems, methods and apparatus for purge gas delivery in an atomic layer deposition (ALD) processing apparatus. The ALD processing apparatus can include a processing chamber including a lid and a chamber wall. One or more process gas lines for delivering process gases are coupled to one or more process gas delivery sources in the processing chamber. An o-ring can be positioned proximate an outer edge of the processing chamber to provide a seal with the chamber wall and the lid. The lid is configured to open for removal of the substrate and close to process the substrate. A purge line for delivering purge gas is coupled to one or more purge gas delivery line sources in the processing chamber, and the purge gas delivery line sources are disposed between the o-ring and the one or more process gas delivery sources. | 12-19-2013 |
20140030433 | METHODS AND APPARATUS FOR DELIVERING PROCESS GASES TO A SUBSTRATE - Methods and apparatus for delivering process gases to a substrate are provided herein. In some embodiments, an apparatus for processing a substrate may include a gas distribution conduit disposed in a processing volume of a process chamber above a substrate support to distribute a process gas to a processing surface of the substrate when disposed on the substrate support; and an actuator coupled to the gas distribution conduit to move the gas distribution conduit with respect to the substrate support. In some embodiments, a method of processing a substrate may include introducing a process gas to a process chamber through a gas distribution conduit disposed above a substrate having a processing surface; and moving the gas distribution conduit within the process chamber and with respect to the substrate to distribute the process gas across the processing surface of the substrate. | 01-30-2014 |
20140050847 | DEPOSITION DEVICE AND DEPOSITION METHOD USING JOULE HEATING - Provided are a deposition method of patterning a thin film on a substrate using momentary Joule heating in a vacuum environment, and a method thereof. The deposition device forms a deposition target layer on one surface of a source substrate as a pattern to be deposited. A deposition target layer forming unit forms a deposition target layer on the one surface of the source substrate to cover the conductive layer. A chamber in a vacuum state receives the source substrate on which the conductive layer and the deposition target layer are formed and the target substrate. A target substrate is disposed in the chamber to face the source substrate. A power supply applies power to the conductive layer to heat-generate the conductive layer. A configuration of the deposition device is very simple, and it is easy to uniformly form a deposition thickness. | 02-20-2014 |
20140050848 | ALUMINUM PRECURSOR COMPOSITION - The present disclosure is related to an aluminum-containing precursor composition, especially a precursor composition which is vaporized to be used for vapor phase deposition processes such as chemical vapor deposition (CVD) or atomic layer deposition (ALD). | 02-20-2014 |
20140050849 | Method of Catalytic Film Deposition - Provided are methods of catalytic atomic layer deposition using pyridine-based catalysts. Certain methods comprising activating a reaction between at least two film precursors and certain other methods of catalytic deposition of SiO | 02-20-2014 |
20140050850 | VACUUM APPARATUS, METHOD FOR COOLING HEAT SOURCE IN VACUUM, AND THIN FILM MANUFACTURING METHOD - A vacuum apparatus ( | 02-20-2014 |
20140072710 | Method for the Infiltration of a Porous Material with a Second Material Related Plant - A method for treating a piece ( | 03-13-2014 |
20140087072 | VAPOR DEPOSITION SYSTEM AND METHOD - A deposition system includes a system housing having a housing interior, a fixture transfer assembly having a generally sloped fixture transfer rail extending through the housing interior, a plurality of processing chambers connected by the fixture transfer rail, a controller interfacing with the processing chambers and at least one fixture carrier assembly carried by the fixture transfer rail and adapted to contain one substrate. The fixture carrier assembly travels along the fixture transfer rail under influence of gravity. A deposition method is also disclosed. | 03-27-2014 |
20140087073 | EQUIPMENT AND METHOD OF MANUFACTURING FOR LIQUID PROCESSING IN A CONTROLLED ATMOSPHERIC AMBIENT - In various exemplary embodiments, a system and related method for processing substrates is provided. In one embodiment, a substrate processing system is provided that includes a substrate load module, a plurality of facilities modules, a plurality of process chambers, a substrate transfer module, at least one transfer gate to provide a contamination barrier between various ones of adjacent modules, and at least one gas impermeable shell to provide a controlled atmosphere within the substrate processing system. | 03-27-2014 |
20140087074 | FILM FORMATION JIG AND FILM FORMATION METHOD USING THE SAME - A film formation jig is configured to be used in a film formation process to a device constituted of members having heat-resistant temperatures different from each other, in which a film is formed on a film formation target member of the device having a heat-resistant temperature higher than a heat-resistant temperature of a non-film formation portion of the device. The film formation jig includes: a retaining member configured to retain the device, the retaining member having a part which is configured to come into contact with a surface of the film formation target member of the device and is shaped in accordance with the surface of the film formation target member; and a mask member configured to mask the non-film formation portion of the device. The retaining member and the mask member have projections disposed on parts configured to come into contact with the non-film formation portion of the device. | 03-27-2014 |
20140087075 | SYSTEM AND METHOD FOR DEPOSITION OF A MATERIAL ON A SUBSTRATE - A method and apparatus for improving coating of a substrate. | 03-27-2014 |
20140099442 | METHOD AND APPARATUS FOR IMPREGNATING TOBACCO INDUSTRY PRODUCTS WITH SENSATE CONSTITUENTS OF BOTANICALS - A method and apparatus for impregnating tobacco industry products with sensate constituents of botanicals by storing the tobacco industry products and the botanicals separately and applying heat and/or pressure to the apparatus to obtain a modified taste and aroma profile, are disclosed. | 04-10-2014 |
20140113073 | METHOD AND APPARATUS FOR FORMING SUBLIMATION IMAGES ON CASES FOR PORTABLE ELECTRONIC DEVICES - A method and apparatus for placing sublimation images on cases of electronic devices prints a plurality of separate sublimation images on a sheet of transfer paper at predetermined locations. The periphery of the images is cut but leaves each image attached to the sheet at least at three locations. A corresponding plurality of cases is placed on fixtures in a tray at locations corresponding to the images. The sheet is placed over the tray, aligning each image with a case, after which heat and pressure cause the images to transfer to the cases by sublimation transfer. | 04-24-2014 |
20140127404 | Apparatus For Spatial Atomic Layer Deposition With Recirculation And Methods Of Use - Provided are atomic layer deposition apparatus and methods including a plurality of elongate gas ports and pump ports in communication with multiple conduits to transport the gases from the processing chamber to be condensed, stored and/or recirculated. | 05-08-2014 |
20140147588 | EVAPORATION METHOD, EVAPORATION DEVICE AND METHOD OF FABRICATING LIGHT EMITTING DEVICE - The invention provides an evaporation apparatus, which is able to improve an efficiency of evaporation materials, uniformity of deposited films, and throughput of the evaporation process. Disclosed is an evaporation source holder, which is installed in an evaporation chamber and configured to hold an evaporation material, and a moving mechanism, which is configured to move the evaporation source holder during evaporation of the evaporation material. The evaporation apparatus is further characterized by a shutter over the evaporation source holder, a filter over the shutter, and a heater surrounding the filter. | 05-29-2014 |
20140154414 | ATOMIC LAYER DEPOSITION APPARATUS AND METHOD - An atomic layer deposition apparatus includes a chamber including a plurality of regions; and a heating device respectively providing specific temperature ranges for the plurality of regions. | 06-05-2014 |
20140154415 | METHOD FOR MANUFACTURING SILICON-CONTAINING FILM - A method for manufacturing a silicon-containing film includes the steps of loading a substrate, depositing a silicon-containing unloading the substrate, dry cleaning, reducing fluoride and exhausting gas. In the step of reducing fluoride, a reducing gas is supplied into a chamber in such a way that a partial pressure of CF | 06-05-2014 |
20140161977 | Synthesis and Characterization of First Row Transition Metal Complexes Containing alpha-keto Hydrazonate Ligands as Potential Precursors for Use in Metal Film Deposition - A compound that is useful for forming a metal by reaction with a reducing agent is described by formula (I): | 06-12-2014 |
20140170315 | THIN FILM DEPOSITING APPARATUS AND THIN FILM DEPOSITION METHOD USING THE SAME - A thin-film deposition apparatus includes a deposition source, which ejects deposition vapors toward a substrate via an ejection hole, and an angle restricting plate, which is arranged adjacent to the ejection hole so as to restrict, within a set range, an angle of ejecting the deposition vapors from the ejection hole. The angle restricting plate includes a fixed restricting plate, which is fixed with respect to the ejection hole, and a movable restricting plate, which is movable with respect to the ejection hole. | 06-19-2014 |
20140178583 | Combinatorial Methods and Systems for Developing Thermochromic Materials and Devices - Embodiments provided herein describe methods and systems for evaluating thermochromic material processing conditions. A plurality of site-isolated regions on at least one substrate are designated. A first thermochromic material is formed on a first of the plurality of site-isolated regions on the at least one substrate with a first set of processing conditions. A second thermochromic material is formed on a second of the plurality of site-isolated regions on the at least one substrate with a second set of processing conditions. The second set of processing conditions is different than the first set of processing conditions. | 06-26-2014 |
20140193577 | PRE-FORM CERAMIC MATRIX COMPOSITE CAVITY AND METHOD OF FORMING AND METHOD OF FORMING A CERAMIC MATRIX COMPOSITE COMPONENT - A pre-form CMC cavity and method of forming pre-form CMC cavity for a ceramic matrix component includes providing a mandrel, applying a base ply to the mandrel, laying-up at least one CMC ply on the base ply, removing the mandrel, and densifying the base ply and the at least one CMC ply. The remaining densified base ply and at least one CMC ply form a ceramic matrix component having a desired geometry and a cavity formed therein. Also provided is a method of forming a CMC component. | 07-10-2014 |
20140193578 | Splashguard and Inlet Diffuser for High Vacuum, High Flow Bubbler Vessel - The present invention is a bubbler having a diptube inlet ending in a bubble size reducing outlet and at least one baffle disc positioned between the outlet of the diptube and the outlet of the bubbler to provide a narrow annular space between the baffle disc and the wall of the bubbler to prevent liquid droplets from entering the outlet to the bubbler. The bubble size reducing outlet is an elongated cylindrical porous metal frit situated in a sump of approximately the same dimensions. A metal frit is placed at the inlet of the outlet of the bubbler. The present invention is also a process of delivering a chemical precursor from a bubbler vessel having the above structure. | 07-10-2014 |
20140199484 | PROCESS AND SYSTEM FOR PRODUCING WATERBORNE COATING LAYER IN HIGH TEMPERATURE AND LOW HUMIDITY CLIMATE - The present disclosure is directed to a process for applying a waterborne coating composition in a spray booth and a system thereof. The disclosure is particularly directed a process for introducing water into incoming air for the spray booth to produce a conditioned spray booth having appropriate humidity levels. The process of this disclosure is particularly useful for applying waterborne coating composition having effect pigments in a low humidity and high temperature climate. | 07-17-2014 |
20140272135 | DEPOSITION INJECTION MASKING - In deposition devices, a precursor is directed at a substrate within a deposition chamber, and a block plate comprising a set of block plate apertures adjusts the direction and volume of the outflowing precursor. However, arrangements of block plate apertures that are suitable for some deposition scenarios (such as one type of precursor) are unsuitable for other deposition scenarios, resulting in precursor deposition that is undesirably thick, thin, or inconsistent. A set of block plate masks positioned over respective zones of the block plate are adjustable to align a set of masking apertures with respect to the block plate apertures, such as by operating a block plate motor to rotate a ring-shaped block plate mask over a cylindrical zone of the block plate. This configuration enables adjustable exposure of the block plate apertures to control the adjusted outflow of precursor through the block plate. | 09-18-2014 |
20140302238 | Apparatus and Method for the Evaporation and Deposition of Materials - An apparatus and method for the evaporation and deposition of materials onto a substrate. A material hopper assembly may receive source material. An agitator mechanism may be controlled for urging or advancing forward the source material. A grinding mechanism may be controlled for grinding source material. A heating pot vessel may be heated to evaporate the source material. The evaporated source material may be deposited on a proximate substrate. The rate of the deposition may be controlled in part by the agitator mechanism and/or the grinding mechanism. Temperature zones in a heating pot vessel may be independently controlled to evaporate the source material. A reactor chamber may be heated to allow the evaporated source materials to interact. A heated mesh may be charged to accelerate particles of the evaporated source materials onto the substrate. | 10-09-2014 |
20140322444 | METHOD FOR MANUFACTURING TRANSPARENT, HEAT-RESISTANT GAS-BARRIER FILM - The present invention provides a process for producing a transparent heat-resistant gas-barrier film capable of exhibiting a good gas-barrier property and maintaining good properties even after heat-treated at a temperature of 250° C. or higher, in a simple manner at low costs without need of a large size facility and a number of steps. The process for producing a transparent heat-resistant gas-barrier film according to the present invention includes the steps of coating a polysilazane-containing solution onto at least one surface of a transparent polyimide film formed of a polyimide containing a specific repeated unit; and calcining the coated solution at a temperature of 180° C. or higher to laminate a silicon oxide layer obtained by the calcination on the transparent polyimide film. | 10-30-2014 |
20140335271 | BOATS CONFIGURED TO OPTIMIZE VAPORIZATION OF PRECURSOR MATERIALS BY MATERIAL DEPOSITION APPARATUSES - A boat according to this disclosure includes side walls and a base that are arranged to define a container with an interior. A bottom of the boat may have a convex configuration. In a specific embodiment, the base may have a convex configuration, such as the shape of a portion of the curved surface of a cylinder, with end walls located at opposite ends of the base. Such a boat may have a crescent configuration. Each boat may be configured to be positioned against another boat, enabling the assembly of groups of boats. Multi-celled structures that receive and effectively increase the surface area of precursor material are also disclosed. A multi-celled structure may be configured for use within the interior of a boat, or individually, without a separate boat. Vaporization chambers that are configured to receive the boats and/or multi-celled structures and material deposition apparatuses that include the vaporization chambers are also disclosed, as are methods for introducing precursor materials into material deposition apparatuses. | 11-13-2014 |
20140349011 | PROCESSING CHAMBER - A process apparatus for treatment of a substrate comprising a load chamber for loading the substrate, a process chamber for processing the substrate, a sealing plane separating the process chamber from the load chamber and means for vertically moving the substrate from the load chamber to the process chamber, and a method for treating the substrate are provided. The load chamber is located in one of the lower and upper portions of the process apparatus, and the process chamber is located in the other of the lower and upper portions of the process apparatus. The process apparatus and method of the present invention will provide easy maintenance and reduced costs by reducing the number of movements for loading the substrate. | 11-27-2014 |
20140363573 | EVAPORATION DEVICE AND EVAPORATION METHOD THEREOF - The disclosure discloses an evaporation device and evaporation method. The evaporation device includes a main chamber for accommodating the evaporation source and the substrate; a first extension chamber and a second extension chamber respectively and alternately communicating with the main chamber; and a first metal mask inside the first extension chamber, intermittently entering the main chamber, and a second metal mask inside the second extension chamber, intermittently entering the main chamber with respective to the first metal mask, such that the evaporation material is able to pass the first or the second metal mask and then on the substrate. | 12-11-2014 |
20150125602 | Methods of Treatment of Ferrous Metal Surfaces and Ferrous Alloy Surfaces - Methods of treating iron-comprising metallic materials by providing an iron-comprising metallic material having one or more surfaces to be treated, contacting the surfaces with a processing agent comprising the processing agent being water-based and containing fee electrons and hydrogen, and allowing electron rich gas from the processing agent to embed into the surfaces to be treated. Methods of inhibiting oxidative electro-chemical corrosion and galvanic corrosion of surfaces of ferrous metal alloys including heating a ferrous metal alloy to produce heated and oil fee surfaces of the alloy, immersing the alloy in an electron rich and hydrogen rich water based treatment agent, and contacting the surfaces of the alloy with gas bubbles comprising electrons generated from the treatment agent. | 05-07-2015 |
20150125603 | METHODS AND APPARATUS FOR DEPOSITING CHALCOGENIDE LAYERS USING HOT WIRE CHEMICAL VAPOR DEPOSITION - Methods and apparatus for depositing chalcogenide materials on substrates in a hot wire chemical vapor deposition (HWCVD) process are provided herein. In some embodiments, a method of depositing a chalcogenide film atop a substrate in a hot wire chemical vapor deposition (HWCVD) process chamber includes vaporizing one or more liquid chalcogenide precursors while flowing a carrier gas to form a first gas mixture of the vaporized chalcogenide precursor and the carrier gas; mixing the first gas mixture with a second gas to form a second gas mixture, wherein the second gas is a catalyst; and flowing the second gas mixture to the HWCVD process chamber, wherein the second gas mixture dissociates in the HWCVD process chamber to deposit a chalcogenide film atop the substrate. | 05-07-2015 |
20150132486 | VAPOR DEPOSITION APPARATUS AND METHOD USING THE SAME - A deposing apparatus includes a crucible having a deposition area formed inside the crucible; a heat sink partially embedded in the crucible and capable of transferring heat from the deposition area; a heat-insulator fixedly surrounding without covering the deposing area; and a thermal reflector securely mounted on a free surface of the heat-insulator without covering the deposition area and having a reflecting face with a slope extending from a side wall of the crucible to the deposition area. The heat-insulator has a relatively low thermal conductivity relative to those of the crucible, the heat sink and the thermal reflector. The thermal reflector reflects thermal radiation in the chamber and communicates with the heat-insulator and the chamber via the pores in the thermal reflector. | 05-14-2015 |
20150132487 | Woven Preform, Composite, and Method of Making Thereof - A three dimensional woven preform, a fiber reinforced composite incorporating the preform, and methods of making thereof are disclosed. The woven preform includes one or more layers of a warp steered fabric. A portion of the warp steered fabric is compressed into a mold to form an upstanding leg. The preform includes the upstanding leg and a joggle in a body portion. The body portion and upstanding leg are integrally woven so there is continuous fiber across the preform. A portion of the warp steered fabric includes stretch broken carbon fibers in the warp direction, and another portion includes conventional carbon fibers. The warp steered fabric can be woven on a loom equipped with a differential take-up mechanism. The warp steered fabric can be a single or multilayer fabric. The preform or the composite can be a portion of an aircraft window frame. | 05-14-2015 |
20150140210 | METHOD AND SYSTEM TO REDUCE OUTGASSING IN A REACTION CHAMBER - Systems and methods of reducing outgassing of a substance within a reaction chamber of a reactor are disclosed. Exemplary methods include depositing a barrier layer within the reaction chamber and using a scavenging precursor to react with species on a surface of the reaction chamber. Exemplary systems include gas-phase deposition systems, such as atomic layer deposition systems, which include a barrier layer source and/or a scavenging precursor source fluidly coupled to a reaction chamber of the system. | 05-21-2015 |
20150147471 | METHOD FOR PRODUCING TRANSPARENT GAS BARRIER FILM AND APPARATUS FOR PRODUCING TRANSPARENT GAS BARRIER FILM - A method for producing a transparent gas barrier film is performed using a roll-to-roll method. The method includes laminating a plurality of thin films of two or more types having different components on a long belt-shaped resin substrate | 05-28-2015 |
20150376776 | VARIABLE-TEMPERATURE MATERIAL GROWTH STAGES AND THIN FILM GROWTH - A thin film of material on a substrate is formed in a continuous process of a physical vapor deposition system, in which material is deposited during a variable temperature growth stage having a first phase conducted below a temperature of about 500° C., and material is continuously deposited as the temperature changes for the second phase to above about 800° C. | 12-31-2015 |
20160002775 | MULTILAYER LINER FOR CHEMICAL VAPOR DEPOSITION FURNACE - A multilayer liner for a chemical vapor deposition furnace may include a first layer comprising graphite and a second layer comprising a metal or alloy. The first layer may define an internal surface of the multilayer liner, and the multilayer liner may define a substantially closed internal volume. In some examples, the metal or alloy may be the same as a metal or alloy that is in a substrate to be coated within an internal volume of the multilayer liner. | 01-07-2016 |
20160010202 | VACUUM EVAPORATION APPARATUS AND EVAPORATION METHOD | 01-14-2016 |
20160067738 | FUNCTIONALIZED CARBON MEMBRANES - Embodiments provide electron-conducting, electron-transparent substrates that are chemically derivatized (e.g., functionalized) to enhance and facilitate the deposition of nanoscale materials thereupon, including both hard and soft nanoscale materials. In various embodiments, the substrates may include an electron-conducting mesh support, for example, a carbon, copper, nickel, molybdenum, beryllium, gold, silicon, GaAs, or oxide (e.g., SiO | 03-10-2016 |
20160083834 | Film Formation Apparatus, Shadow Mask, Film Formation Method, and Cleaning Method - A novel film formation apparatus is provided. A novel film formation method and cleaning method is also provided. Further, a novel shadow mask is provided. The inventors have conceived a structure including a film formation chamber and an adhesive layer that is on the inner wall of the film formation chamber and/or on the shadow mask and to which a film formation material is to be attached. | 03-24-2016 |
20160097117 | METHOD AND APPARATUS FOR STABLY EVAPORATION DEPOSITING UNIFORM THIN FILMS - In a method and apparatus for evaporation depositing uniform thin films, a film is deposited on a substrate of a vacuum environment while maintaining a constant deposition rate. A cover is installed on a wall of the evaporation vessel. When the evaporation material is heated to an evaporation state and the interior of the evaporation vessel reaches a first vapor saturation pressure, the vapor of the evaporation material flows towards a pressure stabilizing chamber. When the pressure stabilizing chamber reaches a second vapor saturation pressure which is smaller than the first vapor saturation pressure, the vacuum environment has a vacuum background pressure which is smaller than the second vapor saturation pressure, so that the evaporation material vapor flows from the pressure stabilizing chamber towards the vacuum environment at constant rate due to the pressure difference, so as to evaporate the substrate. | 04-07-2016 |
20160108522 | VAPOR INFUSION SYSTEM - This invention is an improved treatment process and apparatus for smoothing and strengthening plastic parts, and particularly parts made by rapid prototyping machines. | 04-21-2016 |
20160168698 | Systems, Devices, and/or Methods for Deposition of Metallic and Ceramic Coatings | 06-16-2016 |
20160193627 | Apparatuses and Methods for Stable Aerosol Deposition Using an Aerodynamic Lens System | 07-07-2016 |
20220136092 | SYSTEMS AND METHODS FOR TAILORED MICROSTRUCTURES USING TEMPLATED GRAIN NUCLEATION - Methods for controlled microstructure creation utilize seeding of amorphous layers prior to annealing. Seed crystals are formed on an amorphous layer or layers. The material, size, and spacing of the seed crystals may be varied, and multiple seed layers and/or amorphous layers may be utilized. Thereafter, the resulting assembly is annealed to generate a crystalline microstructure. Via use of these methods, devices having desirable microstructural properties are enabled. | 05-05-2022 |