Entries |
Document | Title | Date |
20080226819 | METHODS OF MAKING CRYSTALLINE TITANIA COATINGS - A method is provided for shifting the amorphous to crystalline transition temperature of a titania coating. The method includes adding a dopant, such as Mo, V, Al, Zn, Zr, Li, K, Co, La, Ca, Ba, Si, Ag, Cu, Ni, Mg, Mn, Cd, Fe, Cr, Tb, Y, Sn, Ge, and/or Pd to a titania-containing material. The doped material can then be applied, e.g., by spray pyrolysis, onto a substrate. A coated article is also provided. | 09-18-2008 |
20080268151 | Organometallic compounds and their use as precursors for forming films and powders of metal or metal derivatives - Disclosed are organometallic compounds derived from Groups VIIb, VIII, IX, and X metals useful as precursors for the formation of metal containing powders and for the chemical deposition of the metals on substrates, particularly for the chemical vapor deposition of metal films suitable for the manufacture of electronic devices. Methods for their use are also disclosed. The preferred organometallic compounds of the present invention are of the formula (R | 10-30-2008 |
20080274278 | Method for Depositing in Particular Metal Oxides by Means of Discontinuous Precursor Injection - The invention relates to a method for the deposition of at least one layer on at least one substrate in a process chamber, whereby the layer comprises at least one component. The at least one first metal component is vaporised in a particularly conditioned carrier gas by means of a non-continuous injection of a starting material in the form of a liquid or dissolve in a liquid and at least one second component as chemically-reactive starting material. The starting materials are alternately introduced into the process chamber and the second starting material is a chemically-reactive gas or a chemically-reactive liquid. | 11-06-2008 |
20080274279 | NOBLE METAL LAYER FORMATION FOR COPPER FILM DEPOSITION - Embodiments described herein relate to depositing a cobalt-containing layer by a cyclical deposition process while forming interconnects on a substrate. In one embodiment, a method for forming an interconnect structure is provided which includes depositing a tungsten-containing barrier layer over an exposed contact metal surface within an aperture formed in an insulating material disposed on a substrate, forming a cobalt-containing layer on the tungsten-containing barrier layer using a cyclical deposition process by sequentially exposing the substrate to a cobalt precursor gas and a silicon reducing gas, wherein the cobalt precursor gas contains a cobalt precursor having a cyclopentadienyl ligand, and depositing a copper material on the cobalt-containing layer. | 11-06-2008 |
20080299309 | METHOD FOR PRODUCING A COATING WITH IMPROVED ADHESION - A method of producing a coating for a medical device having high surface area and low porosity. The coating is formed by a PVD process in which a primary metallic component is deposited in the presence of a secondary reactive component in a high energy environment such that surface diffusion and intermixing can occur prior to the solidification of the condensate. The resulting coating consists of a zone 2 microstructure having a [1,1,1] crystal orientation, which provides a surface having well-defined pyramidal-shaped structures formed thereon. | 12-04-2008 |
20080317954 | PULSED DEPOSITION PROCESS FOR TUNGSTEN NUCLEATION - In one embodiment, a method for depositing a tungsten material on a substrate within a process chamber is provided which includes exposing the substrate to a gaseous mixture containing a tungsten precursor and a reducing gas to deposit a tungsten nucleation layer on the substrate during a tungsten deposition process. The process further includes removing reaction by-products generated during the tungsten deposition process from the process chamber, exposing the substrate to the reducing gas to react with residual tungsten precursor within the process chamber during a soak process, removing reaction by-products generated during the soak process from the process chamber, and repeating the tungsten deposition process and the soak process during a cyclic deposition process. In the examples, the reducing gas may contain diborane or silane. | 12-25-2008 |
20090004385 | Copper precursors for deposition processes - In one embodiment, a method comprises providing a chemical phase deposition copper precursor within a chemical phase deposition chamber; and depositing a metal film onto a substrate with the copper precursor by a chemical phase deposition process. | 01-01-2009 |
20090029047 | FILM-FORMING APPARATUS AND FILM-FORMING METHOD - Disclosed is a film-forming method characterized by comprising a step for forming a primary Cu film on a substrate by using a divalent Cu source material, and another step for forming a secondary Cu film on the primary Cu film by using a monovalent Cu source material. | 01-29-2009 |
20090041936 | COMPOSITE REFLECTIVE BARRIER - A coated, low-emissivity aluminum film is manufactured entirely in vacuum by depositing an aluminum layer over a substrate and then immediately coating the metal layer with a very thin protective polymeric layer. The thickness of this coating is selected to minimize absorption in the 3-15 micron wavelength. In vacuum, the metal layer is coated substantially in the absence of moisture, thereby preventing the formation of hydrated oxides that promote corrosion. The aluminum layer is preferably also passivated by in-line exposure to a plasma gas containing an oxygen-bearing component. A leveling polymeric layer may also be deposited between relatively rough substrates and the aluminum layer in order to improve the reflectivity of the resulting structures. | 02-12-2009 |
20090061086 | COATING SYSTEMS CONTAINING RHODIUM ALUMINIDE-BASED LAYERS - A coating process and system suitable for use on components subjected to high temperatures. The coating system includes an overlay coating of predominantly B2 phase rhodium aluminide (RhAl) intermetallic compound containing about 25 to about 90 atomic percent rhodium, about 10 to about 60 atomic percent aluminum, optionally up to a combined total of about 25 atomic percent of one or more platinum group metals chosen from the group consisting of platinum, palladium, ruthenium, and iridium, and up to about 20 atomic percent of the base metal and alloying constituents of the substrate. The RhAl intermetallic coating may serve as an environmental coating, a diffusion barrier layer for an overlying environmental coating, or both, with or without an outer ceramic coating. | 03-05-2009 |
20090068357 | MAGNESIUM-TITANIUM SOLID SOLUTION ALLOYS - Films of magnesium mixed with titanium are produced by non-equilibrium alloying processes such as electron beam evaporation of magnesium and titanium ingots in a very low pressure chamber. Such magnesium-titanium films form as single phase solid solutions. Titanium is inherently resistant to corrosion and its admixture with magnesium in solid solution provides a new composition that is less subject to intra-film galvanic corrosion. The magnesium-titanium films also provide relatively hard and strong coatings. | 03-12-2009 |
20090068358 | PLASTIC CODE WHEEL/STRIP FABRICATION METHOD - A method of making a plastic code wheel/code strip by: depositing a chrome-aluminum film on a plastic substrate having a transmittance greater than 90%, a transmittance greater than 90%, a heat resistance to at least 120° C. and a thickness smaller than 0.5 mm; forming a photoresist layer on the chrome-aluminum film; covering a patterned film strip on the photoresist layer; radiating the patterned film strip with a collimated light source to expose the optical grating pattern into the photoresist layer; removing the patterned film strip and the non-exposed photoresist from the chrome-aluminum film; etching the chrome-aluminum film; removing the photoimaged photoresist so as to obtain a semi-finished product having an optical grating pattern; and then stamping the semi-finished product into a finished product according to a predetermined shape. | 03-12-2009 |
20090074962 | Method for the protection of an optical element of a lithographic apparatus and device manufacturing method - A method for the protection of an optical element of a lithographic apparatus is disclosed. A deposition gas comprising SnH | 03-19-2009 |
20090208650 | Ti-BASED FILM FORMING METHOD AND STORAGE MEDIUM - A Ti-based film forming method includes a step (step | 08-20-2009 |
20090238970 | ORGANIC RUTHENIUM COMPOUND FOR CHEMICAL VAPOR DEPOSITION, AND CHEMICAL VAPOR DEPOSITION METHOD USING THE ORGANIC RUTHENIUM COMPOUND - The present invention is an organoruthenium compound for use in production of a ruthenium or ruthenium compound thin film by chemical vapor deposition, including ruthenium and an arene group and norbornadiene both coordinated to the ruthenium and represented by the following formula. The present invention is an organoruthenium compound for use in chemical vapor deposition which does not require the coexistence of oxygen during the thin film formation, and moreover, is liquid at ordinary temperature, thereby having good handleability and recyclability. | 09-24-2009 |
20090263579 | Dry Composition, Its Use, Layer System and Coating Process - Coating processes are often only intended to be applied locally. At the same time, local coating processes cannot always be used, so that frequently masking has to be used. A protective layer contains a binder and titanium oxide and can be used as a diffusion barrier, so that, in a coating process, the coating material is only applied locally. The binder is converted into carbon before the coating. | 10-22-2009 |
20090324821 | METHODS FOR FORMING THIN FILMS COMPRISING TELLURIUM - Methods for controllably forming Sb—Te, Ge—Te, and Ge—Sb—Te thin films are provided. ALD processes can be used to deposit a first film comprising ZnTe. Providing an antimony source chemical, such as SbI | 12-31-2009 |
20100055310 | GROUP V METAL CONTAINING PRECURSORS AND THEIR USE FOR METAL CONTAINING FILM DEPOSITION - Compound of the formula (Ia), or of the formula (Ib). These new precursors are useful for pure metal, metallic oxide, oxynitride, nitride and/or silicide film deposition to make electrodes and/or high k layers, and/or copper diffusion barrier layers, etc. | 03-04-2010 |
20100104752 | METHOD FOR COATING A SUBSTRATE AND METAL ALLOY VACUUM DEPOSITION FACILITY - The invention relates to a process for coating a substrate (S) whereby a metal alloy layer comprising at least two metallic elements is continuously deposited on the substrate (S) by means of a vacuum deposition facility ( | 04-29-2010 |
20100159134 | RESIN COMPOSITION FOR DIRECT VAPOR DEPOSITION, MOLDED ARTICLES MADE BY USING THE SAME, AND SURFACE-METALLIZED LAMP HOUSING - The direct vapor depositing resin composition of the present invention comprises at least one selected from the group consisting of (A-I): a graft copolymer obtained by graft-polymerizing one or more monomers or a monomer mixture to a complex rubber-like polymer (G) composed of a polyorganosiloxane and a (meth)acrylate-based polymer and (A-II): a graft copolymer obtained by graft-polymerizing one or more monomers or a monomer mixture including an alkyl (meth)acrylate as an essential component to a rubber-like polymer (R) in which the content of diene units is 30% by weight or less in 100% by weight of the whole rubber-like polymer. The direct vapor depositing resin composition of the present invention can provide a beautiful bright appearance after direct vapor deposition of a metal, further, has high level mechanical strengths such as impact strength and the like, and weather resistance, and is also excellent in hot plate welding property with a transparent resin such as PMMA resins, PC resins and the like. | 06-24-2010 |
20100189899 | METHOD AND DEVICE FOR THE INFILTRATION OF A STRUCTURE OF A POROUS MATERIAL BY CHEMICAL VAPOUR DEPOSITION - A method and a device for infiltration of a structure made of a porous material by chemical vapor deposition. According to the method, a first face of the porous material structure is exposed to a gaseous flow, and the second face is maintained at least partially free from any contact. | 07-29-2010 |
20110020546 | Low Temperature ALD of Noble Metals - Noble metal films can be deposited by atomic layer deposition (ALD)-type processes. In preferred embodiments, Ir, Pd, and Pt are deposited by alternately and sequentially contacting a substrate with vapor phase pulses of a noble metal precursor, an oxygen source, and a hydrogen source. The oxygen source is preferably a reactive oxygen species. Preferably the deposition temperature is less than about 200° C. Preferably, pulses of the hydrogen source are less than 10 seconds. | 01-27-2011 |
20110081485 | METHOD FOR THE APPLICATION OF A FILTER ON A WEB - A Fabry-Perot filter is applied as a thin coating on a film, for example, a packaging film, and permits interesting color effects. The coating has a layered construction in which both reflecting layers of the filter may be made of aluminum and the intermediate layer between the reflecting layers may be made of aluminum oxide. | 04-07-2011 |
20110195188 | CHEMICAL VAPOR DEPOSITION OF HIGH CONDUCTIVITY, ADHERENT THIN FILMS OF RUTHENIUM - A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both layers are deposited using chemical vapor deposition (CVD) employing low deposition rates. | 08-11-2011 |
20110206844 | CHROMIUM-FREE PASSIVATION OF VAPOR DEPOSITED ALUMINUM SURFACES - A process for passivating a vapor-deposited aluminum layer on a substrate, including providing a substrate comprising vapor deposited aluminum on a surface thereof; treating the surface of the substrate with an aqueous substantially chromium-free composition comprising a hexafluorozirconate; and rinsing the treated surface with water. A process for passivating a vapor-deposited aluminum layer on a substrate, including vapor depositing a layer of aluminum on a substrate; treating the substrate with the vapor deposited aluminum with an aqueous substantially chromium-free composition comprising a hexafluorozirconate; and rinsing the treated substrate with water. | 08-25-2011 |
20110236576 | HOUSING AND SURFACE TREATING METHOD FOR MAKING THE SAME - A surface treating method for making a housing have a metallic glass main body comprising: coating a primer on the metallic glass main body to form a bottom layer; forming a plating layer on the bottom layer; coating an adhesive on the plating layer to form an adhesive layer; and coating a lacquer on the adhesive layer to form an outer layer. | 09-29-2011 |
20110268878 | ORGANORUTHENIUM COMPOUND FOR USE IN CHEMICAL VAPOR DEPOSITION AND CHEMICAL VAPOR DEPOSITION USING THE SAME - The present invention is an organoruthenium compound for use in production of a ruthenium or ruthenium compound thin film by chemical vapor deposition, including ruthenium and an arene group and norbornadiene both coordinated to the ruthenium and represented by the following formula. The present invention is an organoruthenium compound for use in chemical vapor deposition which does not require the coexistence of oxygen during the thin film formation, and moreover, is liquid at ordinary temperature, thereby having good handleability and recyclability. | 11-03-2011 |
20110293829 | COATING METHOD AND APPARATUS, A PERMANENT MAGNET, AND MANUFACTURING METHOD THEREOF - The object of the present invention is to improve the productivity of a permanent magnet and to manufacture it at a low cost by effectively coating Dy and Tb on a surface of the magnet of Fe—B-rare earth elements having a predetermined configuration. The permanent magnet of the present invention is manufactured by a coating step for coating Dy on the surface of the magnet of Fe—B-rare earth elements having a predetermined configuration and a diffusing step for diffusing Dy coated on the surface of the magnet into crystal grain boundary phases of the magnet with being heat treated at a predetermined temperature. In this case, the coating step comprises a first step for heating a process chamber used for carrying out the coating step and generating metallic vapor atmosphere within the process chamber by vaporizing vaporizable metallic material previously arranged within the process chamber, and a second step for introducing into the process chamber the magnet held at a temperature lower than that within the process chamber and then selectively depositing the vaporizable metallic material on a surface of the magnet by an effect of temperature difference between the temperature within the process chamber and that of the magnet by the magnet reaches a predetermined temperature. | 12-01-2011 |
20110305832 | SURFACE TREATING METHOD FOR MAKING A HOUSING - A surface treating method for making a housing have a metallic main body includes the follow steps. A primer is coated on the metallic main body to form a bottom layer. A plating layer is formed on the bottom layer. An adhesive is coated on the plating layer to form an adhesive layer. Finally, a lacquer is coated on the adhesive layer to form an outer layer. | 12-15-2011 |
20110311725 | APPARATUS AND METHODS FOR SAFELY PROVIDING HAZARDOUS REACTANTS - An apparatus for providing a reactant comprises a reactant space and a reservoir space. The reactant space comprises a chemical complex capable of evolving the reactant when heated. The reservoir space, in turn, is in gas communication with the reactant space. The apparatus is operative to heat the chemical complex when a pressure of the reactant in the reservoir space is below a predetermined set-point, and to cool the chemical complex when the pressure of the reactant in the reservoir space is above the predetermined set-point. | 12-22-2011 |
20120003388 | METHODS AND APPARATUS FOR THERMAL BASED SUBSTRATE PROCESSING WITH VARIABLE TEMPERATURE CAPABILITY - A substrate support may include a body; an inner ring disposed about the body; an outer ring disposed about the inner ring forming a first opening therebetween; a first seal ring disposed above the first opening; a shadow ring disposed above the inner ring, extending inward from the outer ring and forming a second opening between the shadow and outer rings; a second seal ring disposed above the second opening; a space at least partially defined by the body and the inner, outer, first, second, and shadow rings; a first gap defined between a processing surface of a substrate when present and the shadow ring; and a plurality of second gaps fluidly coupled to the space; wherein the first gap and the plurality of second gaps are configured such that, when a substrate is present, a gas provided to the space flows out of the space through the first gap. | 01-05-2012 |
20120040096 | COATING METHOD FOR FORMING PATTERN ON WORKPIECE - A coating method for forming a pattern on a workpiece is provided. The method includes the follow steps: providing a workpiece having a surface, forming a coating layer over the surface using a physical vapor deposition method; providing a mask having a shape conforming to a predetermined pattern; attaching the mask to the surface such that a portion of the coating layer is shielded. The coating layer consists of a shielded portion and an unwanted portion surrounding the shielded portion. Finally, removing the unwanted portion of the coating layer using a magnetic abrasive finishing method, and removing the mask to obtain the shielded portion having the predetermined pattern on the workpiece. | 02-16-2012 |
20120045582 | Process for Coating Discrete Articles with a Zinc-Based Alloyed Layer - The present disclosure concerns a process suitable for coating discrete articles with a zinc-rich, fully alloyed layer. A known method for the corrosion-protection of such articles comprises the steps of hot-dip galvannealing, typically followed by painting. This hot-dip process has however to be performed at a high temperature, thereby submitting the articles to severe thermal stress. A novel vacuum deposition process of Zn is therefore presented. It is characterized in that, in the step of contacting the article with metallic Zn vapor, the temperature of the article is equal to or higher than the dew point of the Zn vapor. The process results in a coating having a uniform thickness, even on less accessible surfaces. The surface roughness is well adapted for the adhesion of paint. | 02-23-2012 |
20120064247 | METHOD FOR FORMING CU FILM, AND STORAGE MEDIUM - A film-forming source material composed of a Cu complex is supplied to a wafer, which is kept at a relatively high first temperature and has a Ru film as a film-forming base film, and initial nuclei of Cu are formed on the wafer. Then, the film-forming source material composed of the Cu complex is supplied to the wafer kept at a relatively low second temperature, and Cu is deposited on the wafer having the initial nuclei of Cu formed thereon. | 03-15-2012 |
20120094022 | METHOD OF FORMING METAL THIN FILM - Provided is a method of forming a metal thin film which can reduce leakage current while improving electric properties by improving step coverage of a device. The method of forming a metal thin film includes supplying a metal precursor including chlorine, purging byproducts produced after the supplying of the metal precursor by injecting a purge gas, supplying a reactant to allow the reactant and the metal precursor to react with each other to form a thin film layer, and purging the byproducts produced after the reaction by injecting a purge gas, wherein before the supplying of the metal precursor, the method further includes supplying a reactant to be adsorbed on a treated product. | 04-19-2012 |
20120107502 | Bisamineazaallylic Ligands And Their Use In Atomic Layer Deposition Methods - Methods for deposition of elemental metal films on surfaces using metal coordination complexes comprising bisamineazaallylic ligands are provided. Also provided are bisamineazaallylic ligands useful in the methods of the invention and metal coordination complexes comprising these ligands. | 05-03-2012 |
20120156373 | PREPARATION OF CERIUM-CONTAINING PRECURSORS AND DEPOSITION OF CERIUM-CONTAINING FILMS - Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. The disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and an amidine ligand. | 06-21-2012 |
20120164328 | FILM FORMATION METHOD AND STORAGE MEDIUM - A substrate is transferred to a processing container, and a film formation raw material containing cobalt amidinate and a reducing agent containing a carbonic acid in a vapor phase are introduced into the processing container, thereby a Co film is formed on the substrate. | 06-28-2012 |
20120183689 | NI FILM FORMING METHOD - A Ni film forming method performs a cycle once or multiple times. The cycle includes: forming a nitrogen-containing Ni film on a substrate by CVD using nickel amidinate as a film formation material and at least one selected from ammonia, hydrazine and derivatives thereof as a reduction gas; and eliminating nitrogen from the nitrogen-containing Ni film by atomic hydrogen which is generated by using as a catalyst Ni produced by supplying hydrogen gas to the nitrogen-containing Ni film. | 07-19-2012 |
20120189774 | ENHANCED DEPOSITION OF NOBLE METALS - The invention relates generally to processes for enhancing the deposition of noble metal thin films on a substrate by atomic layer deposition. Treatment with gaseous halides or metalorganic compounds reduces the incubation time for deposition of noble metals on particular surfaces. The methods may be utilized to facilitate selective deposition. For example, selective deposition of noble metals on high-k materials relative to insulators can be enhanced by pretreatment with halide reactants. In addition, halide treatment can be used to avoid deposition on the quartz walls of the reaction chamber. | 07-26-2012 |
20120213928 | FORMING REACTIVE ELEMENT MODIFIED ALUMINIDE COATINGS WITH LOW REACTIVE ELEMENT CONTENT USING VAPOR PHASE TECHNIQUES - Vapor phase coating techniques with improved control over the co-transfer and co-deposition of aluminum and reactive element(s) from sources to the article being coated. One method includes providing a reactive element source, wherein at least a portion of the reactive element source comprises a non-halide compound of a reactive element, providing an aluminum source, providing a halide activator, and heating an article having a metallic surface, the reactive element source, the aluminum source, and the halide activator under conditions effective to cause species comprising aluminum and the reactive element to be co-deposited onto said surface to form a coating. | 08-23-2012 |
20120244281 | LOW WORK FUNCTION DIAMOND SURFACE AND RADIATION ENERGY CONVERTERS USING SAME - A surface with a low work function is formed from a starting material of diamond or diamond-like carbon. An oxygenation treatment is performed, so that the surface of the diamond or diamond-like carbon is oxygenated. Lithium is then deposited onto the oxygenated surface by means of a physical vapour deposition process. Excess lithium is then removed to form a lithium monolayer. | 09-27-2012 |
20130011557 | MICROCONTACT PRINTED FILMS AS AN ACTIVATION LAYER FOR SELECTIVE ATOMIC LAYER DEPOSITION - The present application relates to methods of forming patterned thin films on a substrate. In some embodiments a first patterned layer may be deposited on a substrate by a imprint lithography technique, such as microcontact printing. A second layer of a desired composition is selectively deposited over the first patterned layer by a vapor phase deposition process, such as ALD or CVD. | 01-10-2013 |
20130059077 | Method of Atomic Layer Deposition Using Metal Precursors - Methods for deposition of metal films consisting essentially of Co, Mn, Ru or a lanthanide on surfaces using metal coordination complexes are provided. The precursors used in the process include a 2-methylimine pyrrolyl ligand and/or N,N′-diisopropylformamidinato ligand. The precursors may also contain cyclopentadienyl, pentamethylcyclopentadienyl or pyrrolyl groups. | 03-07-2013 |
20130095243 | METAL TITANIUM PRODUCTION DEVICE AND METAL TITANIUM PRODUCTION METHOD - A metal titanium production device comprising: (a) a magnesium evaporation unit in which solid magnesium is evaporated and a first flow path which is communicated with the evaporation unit and through which gaseous magnesium is supplied; (b) a second flow path through which gaseous titanium tetrachloride is supplied; (c) a gas mixing unit which is communicated with the first flow path and the second flow path and in which the gaseous magnesium is mixed with titanium tetrachloride, the absolute pressure is adjusted to 50 to 500 kPa and the temperature is adjusted to 1600° C. or higher; (d) a metal titanium precipitation unit which is communicated with the gas mixing unit and in which a precipitation substrate having at least partially a temperature of 715 to 1500° C. is placed and the absolute pressure is adjusted to 50 to 500 kPa; and (e) a mixed gas discharge unit which is communicated with the metal titanium precipitation unit. | 04-18-2013 |
20140017403 | Methods For Depositing Oxygen Deficient Metal Films - Described are methods of depositing an oxygen deficient metal film by chemical reaction of at least one precursor having a predetermined oxygen deficiency on a substrate. An exemplary method includes, during a metal oxide deposition cycle, exposing the substrate to a metal reactant gas comprising a metal and an oxygen reactant gas comprising oxygen to form a layer containing a metal oxide on the substrate. During an oxygen deficient deposition cycle, exposing the substrate to a metal reactant gas comprising a metal and an additional reactant gas excluding oxygen to form a second layer at least one of a metal nitride and a mixed metal on the substrate during a second cycle, the second layer being oxygen deficient relative to the layer containing the metal oxide; and repeating the metal oxide deposition cycle and the oxygen deficient deposition cycle to form the oxygen deficient film having the predetermined oxygen deficiency. | 01-16-2014 |
20140050851 | COLLOIDAL NANOCRYSTAL-BASED THIN FILM AND SOLUTION APPARATUSES AND METHODS - Methods of exchanging ligands to form colloidal nanocrystals (NCs) with chalcogenocyanate (xCN)-based ligands and apparatuses using the same are disclosed. The ligands may be exchanged by assembling NCs into a thin film and immersing the thin film in a solution containing xCN-based ligands. The ligands may also be exchanged by mixing a xCN-based solution with a dispersion of NCs, flocculating the mixture, centrifuging the mixture, discarding the supernatant, adding a solvent to the pellet, and dispersing the solvent and pellet to form dispersed NCs with exchanged xCN-ligands. The NCs with xCN-based ligands may be used to form thin film devices and/or other electronic, optoelectronic, and photonic devices. Devices comprising nanocrystal-based thin films and methods for forming such devices are also disclosed. These devices may be constructed by depositing NCs on to a substrate to form an NC thin film and then doping the thin film by evaporation and thermal diffusion. | 02-20-2014 |
20140099443 | ZINC OXIDE PRECURSOR AND METHOD OF DEPOSITING ZINC OXIDE-BASED THIN FILM USING THE SAME - A zinc oxide (ZnO) precursor and a method of depositing a ZnO-based thin film using the same, with which a high-quality and high-purity ZnO-based thin film can be deposited. The ZnO precursor includes a mixture solvent containing at least two organic solvents which are mixed and a source material comprising diethyl zinc or dimethyl zinc which is diluted in the mixture solvent. | 04-10-2014 |
20140127406 | AUTOMATIC SUPPLY DEVICE FOR AN INDUSTRIAL METAL VAPOR GENERATOR - The present invention relates to a facility for the continuous vacuum deposition of a metal coating on a substrate in motion, comprising a vacuum deposition enclosure ( | 05-08-2014 |
20140134331 | METHOD FOR PRODUCING SUBSTRATE WITH METAL BODY - Provided is a method for producing a substrate with a metal body. This method provides excellent film-forming properties (reflectance and adhesion), is easy to be used on a large substrate, and can be carried out at a low cost. The method includes the steps of: (A) heating a complex to a first temperature so as to generate a vapor of the complex; and (B) contacting the vapor with a substrate heated to a second temperature that is not higher than the first temperature so as to form a metal body containing a central metal of the complex, either in uncombined form or as a compound thereof (exclusive of the complex), on at least part of a surface of the substrate. The second temperature in step (B) is lower than the decomposition temperature of the complex. The central metal of the complex is aluminum or titanium. | 05-15-2014 |
20140147589 | METHOD OF REDUCING TUNGSTEN FILM ROUGHNESS AND RESISTIVITY - Methods for controlling crystal size in bulk tungsten layers are disclosed herein. Methods for depositing a bulk tungsten metal layer can include positioning a substrate with a barrier layer in a processing chamber, forming a tungsten nucleation layer, post-treating the nucleation layer with one or more treatment gas cycles including an activating gas and a purging gas, heating the substrate to a deposition temperature, and depositing a bulk tungsten layer with alternating nitrogen flow on the nucleation layer. The post-treatment cycling can be applied optionally to the bulk metal deposition with alternating nitrogen flow. | 05-29-2014 |
20140147590 | METHOD FOR PRODUCING A COATING ON AN EXTRUSION DIE - A method for producing a coating of one or more layers on an extrusion die as a substrate body of a heat-resistant and/or long-term heat-resistant steel material by means of chemical vapour deposition (CVD), comprising the steps of: providing the substrate body from hot-work tool steel, which is intended for interacting with ductile extrusion metal, introducing a first reaction gas, comprising a metal, in particular titanium, into a reactor receiving the substrate body, to provide a coating metal, introducing a second reaction gas, comprising a carbon compound, into the reactor, to provide carbon for the coating, wherein the first and/or the second reaction gas or a further reaction gas provide(s) nitrogen for the coating, and carrying out a CVD coating process with the reaction gases. | 05-29-2014 |
20140220247 | METHOD AND SYSTEM FOR TREATMENT OF DEPOSITION REACTOR - A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation. | 08-07-2014 |
20140255606 | Methods For Depositing Films Comprising Cobalt And Cobalt Nitrides - Described are cobalt-containing films, as well as methods for providing the cobalt-containing films. Certain methods pertain to exposing a substrate surface to a precursor and a co-reactant to provide a cobalt-containing film, the first precursor having a structure represented by: | 09-11-2014 |
20140287140 | METHOD AND SYSTEM FOR MANUFACTURING A TARGET FOR THE EMISSION OF PHOTON RADIATION, PARTICULARLY X RAYS, OR OF PARTICLES, PARTICULARLY PROTONS OR ELECTRONS, BY LASER FIRING - A method of manufacturing a target for the generation of radiation of photons, protons or electrons by means of a laser, including: forming a support including first and second surfaces connected by openings, and forming in an enclosure a layer of material on the first surface by protecting the first surface with a protection element, injecting into the enclosure a gas of filling material, adjusting the pressure in the enclosure and the temperature of the support to form plugs of material in the openings of the support, and maintaining the temperature of the support and the pressure in the enclosure at values to maintain the plugs, followed by withdrawing the protection clement from the first surface, and forming a layer of metallic material on the first surface of the support and on the plugs. The pressure and support temperature are then modified to remove the plugs. | 09-25-2014 |
20150050420 | METHOD FOR MANUFACTURING METAL FILM - A method for manufacturing a metal film being formed on a surface of a non-electric conductive base material includes processes of a deposition process of releasing a metal being formed in a particle or being vaporized from at least one of targets, the target being made of solid metal and depositing a metal thin film on the surface of the base material by having the released metal hit the surface of the base material from a plurality of directions; and a crack forming process of forming a crack in the metal thin film by applying thermal stress to the metal thin film. | 02-19-2015 |
20150064352 | SYSTEM FOR FORMING MULTINARY NANOPARTICLE FILM AND METHOD FOR FORMING NANOPARTICLE FILM USING SAME - A multinary nanoparticle film forming system includes: a generating chamber with a plurality of metal materials arranged therein so as to generate multinary nanoparticles from nanoparticles; a film forming chamber with a substrate arranged therein; and granulation units arranged in the generating chamber so as to respectively correspond to the plurality of metal materials. Further, each of the granulation units includes each of containers respectively covering the metal materials, each of heaters respectively arranged in the containers, each of outflow ports respectively provided at the containers so as to enable the nanoparticles to flow out therefrom, and each of inflow ports respectively provided at the containers so as to enable the coolant gas to be respectively introduced into the containers. | 03-05-2015 |
20150125605 | Method Of Atomic Layer Deposition Of Elemental Metal - Methods for deposition of elemental metal films on surfaces using metal coordination complexes are provided. The metal complexes comprise thiophene, pyrrole or salen-based ligands. A substrate surface may be contacted with a vapor phase metal coordination complex such that a layer is formed on the surface comprising the metal coordination complex bound to the surface by the metal. The bound metal complex may then be contacted with a reducing gas such that an exchange reaction occurs between the bound metal coordination complex and the reducing gas, thereby dissociating the bound metal complex and producing a first layer of elemental metal on the surface of the substrate. The process can be repeated for additional layers. | 05-07-2015 |
20150315694 | APPARATUS AND METHODS FOR SLURRY ALUMINIDE COATING REPAIR - Methods for deposition of an aluminide coating on an alloy component positioned within a coating compartment of a retort chamber are provided. According to the method, the coating compartment is purged with an inert gas via a first gas line; a positive pressure is created within the coating compartment utilizing the inert gas; the coating compartment is heated to a deposition temperature; and at least one reactant gas is introduced into the coating compartment while at the positive pressure and the deposition temperature to form an aluminide coating on a surface of the alloy component. Retort coating apparatus are also provided. | 11-05-2015 |
20150345017 | IN-SITU CORROSION RESISTANT SUBSTRATE SUPPORT COATING - Corrosion resistant substrate supports and methods of making corrosion resistant substrate supports are provided herein. In some embodiments, a method of making corrosion resistant substrate supports includes exposing the substrate support disposed within a substrate processing chamber to a process gas comprising an aluminum containing precursor; and depositing an aluminum containing layer atop surfaces of the substrate support. | 12-03-2015 |
20160017482 | METHODS AND APPARATUS FOR DEPOSITING A COBALT LAYER USING A CAROUSEL BATCH DEPOSITION REACTOR - Methods and apparatus for depositing a cobalt layer in features formed on a substrate are provided herein. In some embodiments, a method of depositing a cobalt layer atop a substrate includes: (a) providing a substrate to a substrate support that is rotatable between two processing positions; (b) exposing the substrate to a cobalt containing precursor at a first processing position to deposit a cobalt layer atop the substrate, wherein the substrate at the first processing position is at a first temperature; (c) rotating the substrate to a second processing position; and (d) annealing the substrate at the second processing position to remove contaminants from the cobalt layer, wherein the substrate at the second processing position is at a second temperature greater than the first temperature. | 01-21-2016 |
20160138152 | EVAPORATION UNIT AND METHOD FOR EVAPORATING AN OBJECT WITH SAID TYPE OF EVAPORATION UNIT - In order to ensure that metal is homogeneously vaporized, in particular in a vacuum-strip vaporizer plant, a vaporization unit ( | 05-19-2016 |
20160160350 | METHOD TO DEPOSIT CVD RUTHENIUM - Methods for depositing ruthenium by a PECVD process are described herein. Methods for depositing ruthenium can include positioning a substrate in a processing chamber, the substrate having a barrier layer formed thereon, heating and maintaining the substrate at a first temperature, flowing a first deposition gas into a processing chamber, the first deposition gas comprising a ruthenium containing precursor, generating a plasma from the first deposition gas to deposit a first ruthenium layer over the barrier layer, flowing a second deposition gas into the processing chamber to deposit a second ruthenium layer over the first ruthenium layer, the second deposition gas comprising a ruthenium containing precursor, depositing a copper seed layer over the second ruthenium layer and annealing the substrate at a second temperature. | 06-09-2016 |
20160251227 | SYNTHESIS OF SI-BASED NANO-MATERIALS USING LIQUID SILANES | 09-01-2016 |