| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 427250000 | Metal coating | 73 |
| 20100159134 | RESIN COMPOSITION FOR DIRECT VAPOR DEPOSITION, MOLDED ARTICLES MADE BY USING THE SAME, AND SURFACE-METALLIZED LAMP HOUSING - The direct vapor depositing resin composition of the present invention comprises at least one selected from the group consisting of (A-I): a graft copolymer obtained by graft-polymerizing one or more monomers or a monomer mixture to a complex rubber-like polymer (G) composed of a polyorganosiloxane and a (meth)acrylate-based polymer and (A-II): a graft copolymer obtained by graft-polymerizing one or more monomers or a monomer mixture including an alkyl (meth)acrylate as an essential component to a rubber-like polymer (R) in which the content of diene units is 30% by weight or less in 100% by weight of the whole rubber-like polymer. The direct vapor depositing resin composition of the present invention can provide a beautiful bright appearance after direct vapor deposition of a metal, further, has high level mechanical strengths such as impact strength and the like, and weather resistance, and is also excellent in hot plate welding property with a transparent resin such as PMMA resins, PC resins and the like. | 06-24-2010 |
| 20120183689 | NI FILM FORMING METHOD - A Ni film forming method performs a cycle once or multiple times. The cycle includes: forming a nitrogen-containing Ni film on a substrate by CVD using nickel amidinate as a film formation material and at least one selected from ammonia, hydrazine and derivatives thereof as a reduction gas; and eliminating nitrogen from the nitrogen-containing Ni film by atomic hydrogen which is generated by using as a catalyst Ni produced by supplying hydrogen gas to the nitrogen-containing Ni film. | 07-19-2012 |
| 20100104752 | METHOD FOR COATING A SUBSTRATE AND METAL ALLOY VACUUM DEPOSITION FACILITY - The invention relates to a process for coating a substrate (S) whereby a metal alloy layer comprising at least two metallic elements is continuously deposited on the substrate (S) by means of a vacuum deposition facility ( | 04-29-2010 |
| 20090074962 | Method for the protection of an optical element of a lithographic apparatus and device manufacturing method - A method for the protection of an optical element of a lithographic apparatus is disclosed. A deposition gas comprising SnH | 03-19-2009 |
| 20090041936 | COMPOSITE REFLECTIVE BARRIER - A coated, low-emissivity aluminum film is manufactured entirely in vacuum by depositing an aluminum layer over a substrate and then immediately coating the metal layer with a very thin protective polymeric layer. The thickness of this coating is selected to minimize absorption in the 3-15 micron wavelength. In vacuum, the metal layer is coated substantially in the absence of moisture, thereby preventing the formation of hydrated oxides that promote corrosion. The aluminum layer is preferably also passivated by in-line exposure to a plasma gas containing an oxygen-bearing component. A leveling polymeric layer may also be deposited between relatively rough substrates and the aluminum layer in order to improve the reflectivity of the resulting structures. | 02-12-2009 |
| 20130059077 | Method of Atomic Layer Deposition Using Metal Precursors - Methods for deposition of metal films consisting essentially of Co, Mn, Ru or a lanthanide on surfaces using metal coordination complexes are provided. The precursors used in the process include a 2-methylimine pyrrolyl ligand and/or N,N′-diisopropylformamidinato ligand. The precursors may also contain cyclopentadienyl, pentamethylcyclopentadienyl or pyrrolyl groups. | 03-07-2013 |
| 20130095243 | METAL TITANIUM PRODUCTION DEVICE AND METAL TITANIUM PRODUCTION METHOD - A metal titanium production device comprising: (a) a magnesium evaporation unit in which solid magnesium is evaporated and a first flow path which is communicated with the evaporation unit and through which gaseous magnesium is supplied; (b) a second flow path through which gaseous titanium tetrachloride is supplied; (c) a gas mixing unit which is communicated with the first flow path and the second flow path and in which the gaseous magnesium is mixed with titanium tetrachloride, the absolute pressure is adjusted to 50 to 500 kPa and the temperature is adjusted to 1600° C. or higher; (d) a metal titanium precipitation unit which is communicated with the gas mixing unit and in which a precipitation substrate having at least partially a temperature of 715 to 1500° C. is placed and the absolute pressure is adjusted to 50 to 500 kPa; and (e) a mixed gas discharge unit which is communicated with the metal titanium precipitation unit. | 04-18-2013 |
| 20090238970 | ORGANIC RUTHENIUM COMPOUND FOR CHEMICAL VAPOR DEPOSITION, AND CHEMICAL VAPOR DEPOSITION METHOD USING THE ORGANIC RUTHENIUM COMPOUND - The present invention is an organoruthenium compound for use in production of a ruthenium or ruthenium compound thin film by chemical vapor deposition, including ruthenium and an arene group and norbornadiene both coordinated to the ruthenium and represented by the following formula. The present invention is an organoruthenium compound for use in chemical vapor deposition which does not require the coexistence of oxygen during the thin film formation, and moreover, is liquid at ordinary temperature, thereby having good handleability and recyclability. | 09-24-2009 |
| 20110293829 | COATING METHOD AND APPARATUS, A PERMANENT MAGNET, AND MANUFACTURING METHOD THEREOF - The object of the present invention is to improve the productivity of a permanent magnet and to manufacture it at a low cost by effectively coating Dy and Tb on a surface of the magnet of Fe—B-rare earth elements having a predetermined configuration. The permanent magnet of the present invention is manufactured by a coating step for coating Dy on the surface of the magnet of Fe—B-rare earth elements having a predetermined configuration and a diffusing step for diffusing Dy coated on the surface of the magnet into crystal grain boundary phases of the magnet with being heat treated at a predetermined temperature. In this case, the coating step comprises a first step for heating a process chamber used for carrying out the coating step and generating metallic vapor atmosphere within the process chamber by vaporizing vaporizable metallic material previously arranged within the process chamber, and a second step for introducing into the process chamber the magnet held at a temperature lower than that within the process chamber and then selectively depositing the vaporizable metallic material on a surface of the magnet by an effect of temperature difference between the temperature within the process chamber and that of the magnet by the magnet reaches a predetermined temperature. | 12-01-2011 |
| 20110195188 | CHEMICAL VAPOR DEPOSITION OF HIGH CONDUCTIVITY, ADHERENT THIN FILMS OF RUTHENIUM - A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both layers are deposited using chemical vapor deposition (CVD) employing low deposition rates. | 08-11-2011 |
| 20120107502 | Bisamineazaallylic Ligands And Their Use In Atomic Layer Deposition Methods - Methods for deposition of elemental metal films on surfaces using metal coordination complexes comprising bisamineazaallylic ligands are provided. Also provided are bisamineazaallylic ligands useful in the methods of the invention and metal coordination complexes comprising these ligands. | 05-03-2012 |
| 20090263579 | Dry Composition, Its Use, Layer System and Coating Process - Coating processes are often only intended to be applied locally. At the same time, local coating processes cannot always be used, so that frequently masking has to be used. A protective layer contains a binder and titanium oxide and can be used as a diffusion barrier, so that, in a coating process, the coating material is only applied locally. The binder is converted into carbon before the coating. | 10-22-2009 |
| 20110268878 | ORGANORUTHENIUM COMPOUND FOR USE IN CHEMICAL VAPOR DEPOSITION AND CHEMICAL VAPOR DEPOSITION USING THE SAME - The present invention is an organoruthenium compound for use in production of a ruthenium or ruthenium compound thin film by chemical vapor deposition, including ruthenium and an arene group and norbornadiene both coordinated to the ruthenium and represented by the following formula. The present invention is an organoruthenium compound for use in chemical vapor deposition which does not require the coexistence of oxygen during the thin film formation, and moreover, is liquid at ordinary temperature, thereby having good handleability and recyclability. | 11-03-2011 |
| 20080274278 | Method for Depositing in Particular Metal Oxides by Means of Discontinuous Precursor Injection - The invention relates to a method for the deposition of at least one layer on at least one substrate in a process chamber, whereby the layer comprises at least one component. The at least one first metal component is vaporised in a particularly conditioned carrier gas by means of a non-continuous injection of a starting material in the form of a liquid or dissolve in a liquid and at least one second component as chemically-reactive starting material. The starting materials are alternately introduced into the process chamber and the second starting material is a chemically-reactive gas or a chemically-reactive liquid. | 11-06-2008 |
| 20080274279 | NOBLE METAL LAYER FORMATION FOR COPPER FILM DEPOSITION - Embodiments described herein relate to depositing a cobalt-containing layer by a cyclical deposition process while forming interconnects on a substrate. In one embodiment, a method for forming an interconnect structure is provided which includes depositing a tungsten-containing barrier layer over an exposed contact metal surface within an aperture formed in an insulating material disposed on a substrate, forming a cobalt-containing layer on the tungsten-containing barrier layer using a cyclical deposition process by sequentially exposing the substrate to a cobalt precursor gas and a silicon reducing gas, wherein the cobalt precursor gas contains a cobalt precursor having a cyclopentadienyl ligand, and depositing a copper material on the cobalt-containing layer. | 11-06-2008 |
| 20110206844 | CHROMIUM-FREE PASSIVATION OF VAPOR DEPOSITED ALUMINUM SURFACES - A process for passivating a vapor-deposited aluminum layer on a substrate, including providing a substrate comprising vapor deposited aluminum on a surface thereof; treating the surface of the substrate with an aqueous substantially chromium-free composition comprising a hexafluorozirconate; and rinsing the treated surface with water. A process for passivating a vapor-deposited aluminum layer on a substrate, including vapor depositing a layer of aluminum on a substrate; treating the substrate with the vapor deposited aluminum with an aqueous substantially chromium-free composition comprising a hexafluorozirconate; and rinsing the treated substrate with water. | 08-25-2011 |
| 20090208650 | Ti-BASED FILM FORMING METHOD AND STORAGE MEDIUM - A Ti-based film forming method includes a step (step | 08-20-2009 |
| 20090324821 | METHODS FOR FORMING THIN FILMS COMPRISING TELLURIUM - Methods for controllably forming Sb—Te, Ge—Te, and Ge—Sb—Te thin films are provided. ALD processes can be used to deposit a first film comprising ZnTe. Providing an antimony source chemical, such as SbI | 12-31-2009 |
| 20080317954 | PULSED DEPOSITION PROCESS FOR TUNGSTEN NUCLEATION - In one embodiment, a method for depositing a tungsten material on a substrate within a process chamber is provided which includes exposing the substrate to a gaseous mixture containing a tungsten precursor and a reducing gas to deposit a tungsten nucleation layer on the substrate during a tungsten deposition process. The process further includes removing reaction by-products generated during the tungsten deposition process from the process chamber, exposing the substrate to the reducing gas to react with residual tungsten precursor within the process chamber during a soak process, removing reaction by-products generated during the soak process from the process chamber, and repeating the tungsten deposition process and the soak process during a cyclic deposition process. In the examples, the reducing gas may contain diborane or silane. | 12-25-2008 |
| 20110236576 | HOUSING AND SURFACE TREATING METHOD FOR MAKING THE SAME - A surface treating method for making a housing have a metallic glass main body comprising: coating a primer on the metallic glass main body to form a bottom layer; forming a plating layer on the bottom layer; coating an adhesive on the plating layer to form an adhesive layer; and coating a lacquer on the adhesive layer to form an outer layer. | 09-29-2011 |
| 20090029047 | FILM-FORMING APPARATUS AND FILM-FORMING METHOD - Disclosed is a film-forming method characterized by comprising a step for forming a primary Cu film on a substrate by using a divalent Cu source material, and another step for forming a secondary Cu film on the primary Cu film by using a monovalent Cu source material. | 01-29-2009 |
| 20080226819 | METHODS OF MAKING CRYSTALLINE TITANIA COATINGS - A method is provided for shifting the amorphous to crystalline transition temperature of a titania coating. The method includes adding a dopant, such as Mo, V, Al, Zn, Zr, Li, K, Co, La, Ca, Ba, Si, Ag, Cu, Ni, Mg, Mn, Cd, Fe, Cr, Tb, Y, Sn, Ge, and/or Pd to a titania-containing material. The doped material can then be applied, e.g., by spray pyrolysis, onto a substrate. A coated article is also provided. | 09-18-2008 |
| 20090068358 | PLASTIC CODE WHEEL/STRIP FABRICATION METHOD - A method of making a plastic code wheel/code strip by: depositing a chrome-aluminum film on a plastic substrate having a transmittance greater than 90%, a transmittance greater than 90%, a heat resistance to at least 120° C. and a thickness smaller than 0.5 mm; forming a photoresist layer on the chrome-aluminum film; covering a patterned film strip on the photoresist layer; radiating the patterned film strip with a collimated light source to expose the optical grating pattern into the photoresist layer; removing the patterned film strip and the non-exposed photoresist from the chrome-aluminum film; etching the chrome-aluminum film; removing the photoimaged photoresist so as to obtain a semi-finished product having an optical grating pattern; and then stamping the semi-finished product into a finished product according to a predetermined shape. | 03-12-2009 |
| 20100055310 | GROUP V METAL CONTAINING PRECURSORS AND THEIR USE FOR METAL CONTAINING FILM DEPOSITION - Compound of the formula (Ia), or of the formula (Ib). These new precursors are useful for pure metal, metallic oxide, oxynitride, nitride and/or silicide film deposition to make electrodes and/or high k layers, and/or copper diffusion barrier layers, etc. | 03-04-2010 |
| 20120244281 | LOW WORK FUNCTION DIAMOND SURFACE AND RADIATION ENERGY CONVERTERS USING SAME - A surface with a low work function is formed from a starting material of diamond or diamond-like carbon. An oxygenation treatment is performed, so that the surface of the diamond or diamond-like carbon is oxygenated. Lithium is then deposited onto the oxygenated surface by means of a physical vapour deposition process. Excess lithium is then removed to form a lithium monolayer. | 09-27-2012 |
| 20110081485 | METHOD FOR THE APPLICATION OF A FILTER ON A WEB - A Fabry-Perot filter is applied as a thin coating on a film, for example, a packaging film, and permits interesting color effects. The coating has a layered construction in which both reflecting layers of the filter may be made of aluminum and the intermediate layer between the reflecting layers may be made of aluminum oxide. | 04-07-2011 |
| 20080268151 | Organometallic compounds and their use as precursors for forming films and powders of metal or metal derivatives - Disclosed are organometallic compounds derived from Groups VIIb, VIII, IX, and X metals useful as precursors for the formation of metal containing powders and for the chemical deposition of the metals on substrates, particularly for the chemical vapor deposition of metal films suitable for the manufacture of electronic devices. Methods for their use are also disclosed. The preferred organometallic compounds of the present invention are of the formula (R | 10-30-2008 |
| 20110020546 | Low Temperature ALD of Noble Metals - Noble metal films can be deposited by atomic layer deposition (ALD)-type processes. In preferred embodiments, Ir, Pd, and Pt are deposited by alternately and sequentially contacting a substrate with vapor phase pulses of a noble metal precursor, an oxygen source, and a hydrogen source. The oxygen source is preferably a reactive oxygen species. Preferably the deposition temperature is less than about 200° C. Preferably, pulses of the hydrogen source are less than 10 seconds. | 01-27-2011 |
| 20100189899 | METHOD AND DEVICE FOR THE INFILTRATION OF A STRUCTURE OF A POROUS MATERIAL BY CHEMICAL VAPOUR DEPOSITION - A method and a device for infiltration of a structure made of a porous material by chemical vapor deposition. According to the method, a first face of the porous material structure is exposed to a gaseous flow, and the second face is maintained at least partially free from any contact. | 07-29-2010 |
| 20090004385 | Copper precursors for deposition processes - In one embodiment, a method comprises providing a chemical phase deposition copper precursor within a chemical phase deposition chamber; and depositing a metal film onto a substrate with the copper precursor by a chemical phase deposition process. | 01-01-2009 |
| 20090068357 | MAGNESIUM-TITANIUM SOLID SOLUTION ALLOYS - Films of magnesium mixed with titanium are produced by non-equilibrium alloying processes such as electron beam evaporation of magnesium and titanium ingots in a very low pressure chamber. Such magnesium-titanium films form as single phase solid solutions. Titanium is inherently resistant to corrosion and its admixture with magnesium in solid solution provides a new composition that is less subject to intra-film galvanic corrosion. The magnesium-titanium films also provide relatively hard and strong coatings. | 03-12-2009 |
| 20110305832 | SURFACE TREATING METHOD FOR MAKING A HOUSING - A surface treating method for making a housing have a metallic main body includes the follow steps. A primer is coated on the metallic main body to form a bottom layer. A plating layer is formed on the bottom layer. An adhesive is coated on the plating layer to form an adhesive layer. Finally, a lacquer is coated on the adhesive layer to form an outer layer. | 12-15-2011 |
| 20120040096 | COATING METHOD FOR FORMING PATTERN ON WORKPIECE - A coating method for forming a pattern on a workpiece is provided. The method includes the follow steps: providing a workpiece having a surface, forming a coating layer over the surface using a physical vapor deposition method; providing a mask having a shape conforming to a predetermined pattern; attaching the mask to the surface such that a portion of the coating layer is shielded. The coating layer consists of a shielded portion and an unwanted portion surrounding the shielded portion. Finally, removing the unwanted portion of the coating layer using a magnetic abrasive finishing method, and removing the mask to obtain the shielded portion having the predetermined pattern on the workpiece. | 02-16-2012 |
| 20120045582 | Process for Coating Discrete Articles with a Zinc-Based Alloyed Layer - The present disclosure concerns a process suitable for coating discrete articles with a zinc-rich, fully alloyed layer. A known method for the corrosion-protection of such articles comprises the steps of hot-dip galvannealing, typically followed by painting. This hot-dip process has however to be performed at a high temperature, thereby submitting the articles to severe thermal stress. A novel vacuum deposition process of Zn is therefore presented. It is characterized in that, in the step of contacting the article with metallic Zn vapor, the temperature of the article is equal to or higher than the dew point of the Zn vapor. The process results in a coating having a uniform thickness, even on less accessible surfaces. The surface roughness is well adapted for the adhesion of paint. | 02-23-2012 |
| 20120003388 | METHODS AND APPARATUS FOR THERMAL BASED SUBSTRATE PROCESSING WITH VARIABLE TEMPERATURE CAPABILITY - A substrate support may include a body; an inner ring disposed about the body; an outer ring disposed about the inner ring forming a first opening therebetween; a first seal ring disposed above the first opening; a shadow ring disposed above the inner ring, extending inward from the outer ring and forming a second opening between the shadow and outer rings; a second seal ring disposed above the second opening; a space at least partially defined by the body and the inner, outer, first, second, and shadow rings; a first gap defined between a processing surface of a substrate when present and the shadow ring; and a plurality of second gaps fluidly coupled to the space; wherein the first gap and the plurality of second gaps are configured such that, when a substrate is present, a gas provided to the space flows out of the space through the first gap. | 01-05-2012 |
| 20120064247 | METHOD FOR FORMING CU FILM, AND STORAGE MEDIUM - A film-forming source material composed of a Cu complex is supplied to a wafer, which is kept at a relatively high first temperature and has a Ru film as a film-forming base film, and initial nuclei of Cu are formed on the wafer. Then, the film-forming source material composed of the Cu complex is supplied to the wafer kept at a relatively low second temperature, and Cu is deposited on the wafer having the initial nuclei of Cu formed thereon. | 03-15-2012 |
| 20120156373 | PREPARATION OF CERIUM-CONTAINING PRECURSORS AND DEPOSITION OF CERIUM-CONTAINING FILMS - Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. The disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and an amidine ligand. | 06-21-2012 |
| 20120164328 | FILM FORMATION METHOD AND STORAGE MEDIUM - A substrate is transferred to a processing container, and a film formation raw material containing cobalt amidinate and a reducing agent containing a carbonic acid in a vapor phase are introduced into the processing container, thereby a Co film is formed on the substrate. | 06-28-2012 |
| 20120213928 | FORMING REACTIVE ELEMENT MODIFIED ALUMINIDE COATINGS WITH LOW REACTIVE ELEMENT CONTENT USING VAPOR PHASE TECHNIQUES - Vapor phase coating techniques with improved control over the co-transfer and co-deposition of aluminum and reactive element(s) from sources to the article being coated. One method includes providing a reactive element source, wherein at least a portion of the reactive element source comprises a non-halide compound of a reactive element, providing an aluminum source, providing a halide activator, and heating an article having a metallic surface, the reactive element source, the aluminum source, and the halide activator under conditions effective to cause species comprising aluminum and the reactive element to be co-deposited onto said surface to form a coating. | 08-23-2012 |
| 20090061086 | COATING SYSTEMS CONTAINING RHODIUM ALUMINIDE-BASED LAYERS - A coating process and system suitable for use on components subjected to high temperatures. The coating system includes an overlay coating of predominantly B2 phase rhodium aluminide (RhAl) intermetallic compound containing about 25 to about 90 atomic percent rhodium, about 10 to about 60 atomic percent aluminum, optionally up to a combined total of about 25 atomic percent of one or more platinum group metals chosen from the group consisting of platinum, palladium, ruthenium, and iridium, and up to about 20 atomic percent of the base metal and alloying constituents of the substrate. The RhAl intermetallic coating may serve as an environmental coating, a diffusion barrier layer for an overlying environmental coating, or both, with or without an outer ceramic coating. | 03-05-2009 |
| 20120189774 | ENHANCED DEPOSITION OF NOBLE METALS - The invention relates generally to processes for enhancing the deposition of noble metal thin films on a substrate by atomic layer deposition. Treatment with gaseous halides or metalorganic compounds reduces the incubation time for deposition of noble metals on particular surfaces. The methods may be utilized to facilitate selective deposition. For example, selective deposition of noble metals on high-k materials relative to insulators can be enhanced by pretreatment with halide reactants. In addition, halide treatment can be used to avoid deposition on the quartz walls of the reaction chamber. | 07-26-2012 |
| 20080299309 | METHOD FOR PRODUCING A COATING WITH IMPROVED ADHESION - A method of producing a coating for a medical device having high surface area and low porosity. The coating is formed by a PVD process in which a primary metallic component is deposited in the presence of a secondary reactive component in a high energy environment such that surface diffusion and intermixing can occur prior to the solidification of the condensate. The resulting coating consists of a zone 2 microstructure having a [1,1,1] crystal orientation, which provides a surface having well-defined pyramidal-shaped structures formed thereon. | 12-04-2008 |
| 20120094022 | METHOD OF FORMING METAL THIN FILM - Provided is a method of forming a metal thin film which can reduce leakage current while improving electric properties by improving step coverage of a device. The method of forming a metal thin film includes supplying a metal precursor including chlorine, purging byproducts produced after the supplying of the metal precursor by injecting a purge gas, supplying a reactant to allow the reactant and the metal precursor to react with each other to form a thin film layer, and purging the byproducts produced after the reaction by injecting a purge gas, wherein before the supplying of the metal precursor, the method further includes supplying a reactant to be adsorbed on a treated product. | 04-19-2012 |
| 20110311725 | APPARATUS AND METHODS FOR SAFELY PROVIDING HAZARDOUS REACTANTS - An apparatus for providing a reactant comprises a reactant space and a reservoir space. The reactant space comprises a chemical complex capable of evolving the reactant when heated. The reservoir space, in turn, is in gas communication with the reactant space. The apparatus is operative to heat the chemical complex when a pressure of the reactant in the reservoir space is below a predetermined set-point, and to cool the chemical complex when the pressure of the reactant in the reservoir space is above the predetermined set-point. | 12-22-2011 |
| 20130011557 | MICROCONTACT PRINTED FILMS AS AN ACTIVATION LAYER FOR SELECTIVE ATOMIC LAYER DEPOSITION - The present application relates to methods of forming patterned thin films on a substrate. In some embodiments a first patterned layer may be deposited on a substrate by a imprint lithography technique, such as microcontact printing. A second layer of a desired composition is selectively deposited over the first patterned layer by a vapor phase deposition process, such as ALD or CVD. | 01-10-2013 |
| 427251000 | Moving the base | 4 |
| 20090148598 | Methods and Apparatus to Provide Group VIA Materials to Reactors for Group IBIIIAVIA Film Formation - Processes and apparatus are described that form a solar cell absorber on a surface of a workpiece by reacting a precursor layer disposed on the surface of the workpiece with an absorber constituent vapor in a heating chamber. The absorber constituent material is delivered from an absorber constituent material delivery system in molten form into a container in the heating chamber and vaporized to be used during the reaction. | 06-11-2009 |
| 20090017207 | Formation of Selenide, Sulfide or Mixed Selenide-Sulfide Films on Metal or Metal Coated Substrates - A process and composition for preventing cracking in composite structures comprising a metal coated substrate and a selenide, sulfide or mixed selenide sulfide film. Specifically, cracking is prevented in the coating of molybdenum coated substrates upon which a copper, indium-gallium diselenide (CIGS) film is deposited. Cracking is inhibited by adding a Se passivating amount of oxygen to the Mo and limiting the amount of Se deposited on the Mo coating. | 01-15-2009 |
| 20110274838 | SYSTEM AND PROCESS FOR THE CONTINUOUS VACUUM COATING OF A MATERIAL IN WEB FORM - The system ( | 11-10-2011 |
| 20120282401 | METHOD OF FORMING A PARTIAL DEPOSITION LAYER AND APPARATUS OF FORMING A PARTIAL DEPOSITION LAYER - A method of forming a partial deposition layer and an apparatus of forming the partial deposition layer are provided. A substrate is provided over an evaporation plate. A shielding plate is placed between the evaporation plate and the substrate such that the shielding plate shields a first portion of the substrate and exposes a second portion of the substrate. An evaporation process is performed when the substrate is moving in a predetermined direction such that a evaporation source on the evaporation plate is deposited on the exposed second portion of the substrate but not deposited on the shielded first portion of the substrate. | 11-08-2012 |
| 427252000 | By decomposing metallic compound (e.g., pack process, etc.) | 24 |
| 20100075035 | FILM FORMATION METHOD AND FILM FORMATION APPARATUS - A film formation method is disclosed for depositing a metal film on a target substrate by supplying a metal carbonyl source in gas phase to a surface of the target substrate and decomposing the source near the surface of the target substrate. The method includes a step of preferentially decomposing the metal carbonyl source in an area near the outer peripheral portion of the target substrate when the metal film is being deposited on the surface of the target substrate. As a result, a CO concentration in the atmosphere is increased locally near the outer peripheral portion of the target substrate and the depositing of the metal film on the outer peripheral portion is better controlled. | 03-25-2010 |
| 20090162550 | COPPER (I) AMIDINATES AND GUANIDINATES, MIXED LIGAND COPPER COMPLEXES, AND COMPOSITIONS FOR CHEMICAL VAPOR DEPOSITION, ATOMIC LAYER DEPOSITION, AND RAPID VAPOR DEPOSITION OF COPPER - Copper (I) amidinate and copper (I) guanidinate precursors for forming copper thin films in the manufacture of microelectronic device articles, e.g., using chemical vapor deposition, atomic layer deposition, and rapid vapor deposition processes, as well as mixed ligand copper complexes suitable for such processes. Also described are solvent/additive compositions for copper precursors for CVD/ALD of copper metal films, which are highly advantageous for liquid delivery of such copper amidinates and copper guanidinates, as well as for other organocopper precursor compounds and complexes, e.g., copper isoureate complexes. | 06-25-2009 |
| 20130059078 | USE OF RUTHENIUM TETROXIDE AS A PRECURSOR AND REACTANT FOR THIN FILM DEPOSITIONS - Disclosed are atomic layer deposition methods using ruthenium-containing precursors to form ruthenium-containing films for use in the manufacture of semiconductor, photovoltaic, LCD-TFT, or flat panel type devices. | 03-07-2013 |
| 20090087561 | METAL AND METALLOID SILYLAMIDES, KETIMATES, TETRAALKYLGUANIDINATES AND DIANIONIC GUANIDINATES USEFUL FOR CVD/ALD OF THIN FILMS - Metal and metalloid precursors useful for forming metal-containing films on substrates, including amide precursors, tetraalkylguanidinate precursors, ketimate and dianionic guanidinate precursors. The precursors of the invention are readily formed and conveniently used to carry out chemical vapor deposition or atomic layer deposition at low temperature, e.g., at temperature below 400° C. | 04-02-2009 |
| 20090104352 | Method of film formation and computer-readable storage medium - A film formation method includes a first stage including a period of heating a target substrate to a film formation temperature, and supplying a metal compound gas and a nitrogen-containing reducing gas onto the target substrate, thereby directly depositing a metal nitride film by CVD on a target substrate; and a second stage of supplying the metal compound gas and the nitrogen-containing reducing gas, thereby further depositing a metal nitride film by CVD on the metal nitride film initially deposited by the first stage, to obtain a predetermined film thickness. Each of the first stage and the second stage is arranged to repeat one or more times a cycle including a first step of supplying the metal compound gas and the nitrogen-containing reducing gas and a second step of stopping the metal compound gas and supplying the nitrogen-containing reducing gas. | 04-23-2009 |
| 20090136664 | Method for forming aluminide diffusion coatings - A method for forming an aluminide coating comprising diffusion coating a substrate with the use of an aluminum-based compound and a halide activator, each having a sulfur concentration of less than about 20 parts-per-million by weight. | 05-28-2009 |
| 20090324822 | METHOD FOR DEPOSITING HARD METALLIC COATINGS - A method for depositing a hard metallic chrome coating or similar metal by chemical vapor deposition on a metallic substrate, includes: a) preparing a solution containing, in an oxygen atom depleted solvent, i) a molecular compound of the bis(arene) family that's a precursor of the deposited metal with a decomposition temperature 300° C.-550° C., and ii) a chlorinated additive; b) introducing the solution as aerosol into a heated evaporator at a temperature between the solvent boiling temperature and the precursor decomposition temperature (PDT); and c) driving the vaporized aerosol from the evaporator towards a CVD reactor including a susceptor carrying the substrate, heated above the PDT, up to 550° C., the evaporator and CVD reactor being subjected to atmospheric pressure. This DLI-CVD method performed at low temperature and atmospheric pressure enables continuous industrial treatment of large metallic plates, producing hard, monolayer or nanostructured multilayer metallic coatings. An appropriate injectable solution is also described. | 12-31-2009 |
| 20090117271 | FILM FORMING APPARATUS AND A BARRIER FILM PRODUCING METHOD - A film forming apparatus is used in a semiconductor manufacturing process and a method for producing a barrier film is used for a semiconductor. When a metallic gas and a reactive gas are alternatively flown, a back-flow preventing gas and an auxiliary gas are flown, the reactive gas and the auxiliary gas are moved with the flow of the back-flow preventing gas, and radicals are produced by being in contact with them to a catalytic material. Since the metallic material gas is not in contact with the catalytic material, the catalytic material is not degraded. A shower plate may be disposed between a radical producing chamber and a reaction chamber, so that the radicals are fed into the reaction chamber through holes. Thus, a barrier film having low resistance and excellent coverage is formed. | 05-07-2009 |
| 20090291208 | ATOMIC LAYER DEPOSITION USING METAL AMIDINATES - Metal films are deposited with uniform thickness and excellent step coverage. Copper metal films were deposited on heated substrates by the reaction of alternating doses of copper(I) NN′-diispropylacetamidinate vapor and hydrogen gas. Cobalt metal films were deposited on heated substrates b the reaction of alternating doses of cobalt(II) bis(N,N′-diispropylacetamidinate) vapor and hydrogen gas. Nitrides and oxides of these metals can be formed by replacing the hydrogen with ammonia or water vapor, respectively. The films have very uniform thickness and excellent step coverage in narrow holes. Suitable applications include electrical interconnects in microelectronics and magnetoresistant layers in magnetic information storage devices. | 11-26-2009 |
| 20100316799 | FILM FORMING METHOD AND FILM FORMING APPARATUS - Disclosed is a film forming method including the steps of: producing a monovalent carboxylic acid metal salt gas by reacting a bivalent carboxylic acid metal salt with a carboxylic acid; supplying the monovalent carboxylic acid metal salt gas on a substrate to accumulate a monovalent carboxylic acid metal salt film; and decomposing the monovalent carboxylic acid metal salt film by supplying energy to the substrate formed with the monovalent carboxylic acid metal salt film so as to form a metallic film. | 12-16-2010 |
| 20110151120 | SURFACE TREATING METHOD FOR MAKING THE SAME - A surface treating method for making a housing having a main body includes forming a plating layer on the main body, coating an adhesive on the plating layer to form an adhesive layer, and coating a lacquer on the adhesive layer to form an outer layer. The adhesive comprises polyolefin chloride. | 06-23-2011 |
| 20090022891 | METHOD OF FORMING METAL FILM - A method of forming a metal film, comprising the steps of:
| 01-22-2009 |
| 20110318488 | ORGANORUTHENIUM COMPOUND FOR CHEMICAL DEPOSITION AND CHEMICAL DEPOSITION PROCESS USING THE ORGANORUTHENIUM COMPOUND - An object of the present invention is to provide an organoruthenium compound which has good film formation characteristics as an organoruthenium compound for chemical deposition, has a high vapor pressure, and can easily form a film even when hydrogen is used as a reactant gas. The present invention relates to an organoruthenium compound, dicarbonyl-bis(5-methyl-2,4-hexanediketonato)ruthenium (II) which can have isomers 1 to 3, wherein the content of the isomer 2 is 30% by mass or more, the content of the isomer 3 is 30% by mass or less, and the balance is the isomer 1. | 12-29-2011 |
| 20080220165 | Gas Turbine Engine Components With Aluminide Coatings And Method Of Forming Such Aluminide Coatings On Gas Turbine Engine Components - A turbine engine component ( | 09-11-2008 |
| 20120064248 | METHOD FOR FORMING CU FILM AND STORAGE MEDIUM - In a method for forming a Cu film, a substrate is loaded in a processing chamber and a gaseous film-forming source material including monovalent amidinate copper and a gaseous reducing agent including a carboxylic acid are introduced into the processing chamber. Then, a Cu film is deposited on the substrate by reacting the film-forming source material and the reducing agent together on the substrate. | 03-15-2012 |
| 20120251724 | BETA-KETOIMINE LIGAND, METHOD OF PREPARING THE SAME, METAL COMPLEX COMPRISING THE SAME AND METHOD OF FORMING THIN FILM USING THE SAME - The β-ketoimine ligand is represented by the following formula 1: | 10-04-2012 |
| 20120231164 | Precursors and Methods for the Atomic Layer Deposition of Manganese - Methods and precursors are provided for deposition of elemental manganese films on surfaces using metal coordination complexes comprising an eta-3-bound monoanionic four-electron donor ligands selected from amidinate, mixed ene-amido and allyl, or eta-2 bound amidinate ligand. The ligands are selected from amidinate, ene-amido, and allyl. | 09-13-2012 |
| 20080299310 | Nickel-base superalloy having an optimized platinum-aluminide coating - A nickel-base superalloy substrate includes a surface region having an integrated aluminum content of from about 18 to about 24 percent by weight and an integrated platinum content of from about 18 to about 45 percent by weight, with the balance components of the substrate. The substrate is preferably a single-crystal advanced superalloy selected for use at high temperatures. The substrate may optionally have a ceramic layer deposited over the platinum-aluminide region, to produce a thermal barrier coating system. The platinum-aluminide region is produced by diffusing platinum into the substrate surface, and thereafter diffusing aluminum into the substrate surface. | 12-04-2008 |
| 20120321786 | SYSTEM FOR MULTI-REGION PROCESSING - A gas distribution structure for supplying reactant gases and purge gases to independent process cells to deposit thin films on separate regions of a substrate is described. Each process cell has an associated ring purge and exhaust manifold to prevent reactive gases from forming deposits on the surface of the wafer between the isolated regions. Each process cell has an associated showerhead for conveying the reactive gases to the substrate. The showerheads can be independently rotated to simulate the rotation parameter for the deposition process. | 12-20-2012 |
| 20130022744 | METHOD OF FORMING NOBLE METAL LAYER USING OZONE REACTION GAS - A noble metal layer is formed using ozone (O | 01-24-2013 |
| 427253000 | Halogen containing compound | 4 |
| 20130029043 | MASKANT FREE DIFFUSION COATING PROCESS - Selected areas of a component are covered with a maskant chamber during a coating process to protect the areas from the coating vapor. The covered areas are further protected by a flow of an inert gas in the maskant chamber. | 01-31-2013 |
| 20130122198 | PROCESS FOR FORMING A PROTECTIVE COATING ON THE SURFACE OF A METAL PART - The present invention relates to a process for forming on the surface of a metal part a protective coating containing aluminium and zirconium, in which process said part and a cement made of an aluminium alloy are brought into contact with a gas at a treatment temperature in a treatment vessel, the gas comprising a carrier gas and an activator, the activator reacting with the cement to form a gaseous aluminium halide that decomposes on the surface of the part, depositing metallic aluminium thereon, the activator containing a zirconium salt such as ZΓO (¾ obtained from granules of a zirconium salt), disassociation reactions of said zirconium salt taking place within a disassociation temperature range with formation of a Zr metal coating on the surface of the part, the assembly comprising the part, the cement and the zirconium salt granules is progressively heated in the chamber from room temperature up to the treatment temperature, the process being characterized in that the treatment chamber is maintained at an overpressure with no carrier gas flow throughout the temperature range corresponding to the disassociation reactions of the zirconium salt. | 05-16-2013 |
| 20120070578 | METHOD FOR PRODUCING TITANIUM METAL - Disclosed is a method for producing titanium metal, which comprises: (a) a step in which a mixed gas is formed by supplying titanium tetrachloride and magnesium into a mixing space that is held at an absolute pressure of 50-500 kPa and at a temperature not less than 1700° C.; (b) a step in which the mixed gas is introduced into a deposition space; (c) a step in which titanium metal is deposited and grown on a substrate for deposition; and (d) a step in which the mixed gas after the step (c) is discharged. In this connection, the deposition space has an absolute pressure of 50-500 kPa, the substrate for deposition is arranged in the deposition space, and at least a part of the substrate for deposition is held within the temperature range of 715-1500° C. | 03-22-2012 |
| 20120177823 | METHOD FOR FORMING A PROTECTIVE COATING CONTAINING ALUMINUM ON THE SURFACE OF A METAL PART - A method for forming a protective coating containing aluminum on the surface of a metal part, wherein the part is contacted with a carburizer made of an aluminum alloy, at a treatment temperature and in a chamber, the atmosphere of which contains an active gas which reacts with the carburizer to form a gaseous aluminum halide, which decomposes upon contacting the part while depositing aluminum metal thereon. In the method the aluminum alloy of the carburizer includes at least one element, zirconium and/or hafnium, the active gas reacting with the carburizer to also form a halide of the reactive element which decomposes upon contacting the part while depositing the element thereon at the same time as the aluminum. | 07-12-2012 |
