| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 427578000 | Silicon containing coating material | 79 |
| 20130059093 | METHOD OF PRODUCING COATED MEMBER - The coated member production method includes a DLC film forming step of introducing a feedstock gas containing a carbon compound and an oxygen-containing organic silicon compound into a treatment chamber in which a base is accommodated, and applying a voltage to the base at a treatment pressure of not lower than 100 Pa and not higher than 400 Pa to generate plasma to form a DLC film on a surface of the base. Hexamethyldisiloxane, for example, is used as the oxygen-containing organic silicon compound. A DC pulse voltage, for example, is applied to the base in the DLC film forming step. | 03-07-2013 |
| 20130095256 | IMPACT AND EROSION RESISTANT THERMAL AND ENVIRONMENTAL BARRIER COATINGS - The present invention provides a process for the application of high temperature coating that provide enhanced impact resistance and erosion damage for the coatings. For high temperature coating systems that provide environmental protection to silicon based ceramics, the process provides the deposition of a silicon-based bond coat on the substrate using the directed vapor deposition with plasma activation and at least one supersonic gas jet nozzle. The process provides the deposition of an EBC layer using the directed vapor deposition with the gas jet nozzle. In one embodiment, the thermal barrier layer may also contain one or more dense embedded layers which further promote impact resistance. Within the process, the particular layers, silicon bond coat, EBC layer and/or TBC layer may be deposited together or specific novel layers applied in combination with other layers deposited using prior known deposition techniques. | 04-18-2013 |
| 20090233007 | Chemical vapor deposition reactor and method - The photovoltaic structure comprises a thin film coating on a transparent substrate, the thin film comprising an effective amount of nanocrystalline silicon embedded in a matrix of amorphous and/or microcrystalline silicon. A transparent conducting oxide layer on a layer of non-conductive transparent oxide provides light-trapping capability as well as electrical conductivity where needed. A chemical vapor deposition (“CVD”) reactor provides improved gas distribution to the substrates being coated in the reactor. An improved sputtering process and an improved RF plasma-enhanced CVD manufacturing method both using high levels of hydrogen in the hydrogen-silane mixture and high electrical power levels for the plasma to increase the speed and to lower the cost of manufacturing. | 09-17-2009 |
| 20130129940 | ORGANOAMINOSILANE PRECURSORS AND METHODS FOR MAKING AND USING SAME - Described herein are organoaminosilane precursors which can be used to deposit silicon containing films which contain silicon and methods for making these precursors. Also disclosed herein are deposition methods for making silicon-containing films or silicon containing films using the organoaminosilane precursors described herein. Also disclosed herein are the vessels that comprise the organoaminosilane precursors or a composition thereof that can be used, for example, to deliver the precursor to a reactor in order to deposit a silicon-containing film. | 05-23-2013 |
| 20110217485 | METHOD FOR COATING A METAL CRUCIBLE ELEMENT WITH A MIXTURE OF GLASS AND CERAMIC - Angular sectors of a cylindrical wall of a crucible for vitrification of waste, built in steel and subject to high temperatures, are coated with a mixture of mainly glass and ceramic, the coating being subject to a heat treatment comprising a step between 650° C. and 850° C. so as to perform surface melting of the mixture filling the open porosity, improving dielectric strength and the cohesion of the coating, but without producing any excessive thermal expansion or oxidation of the substrate which would lead to fast flaking of the coating. | 09-08-2011 |
| 20090148627 | DEUTEROXYL-DOPED SILICA GLASS, OPTICAL MEMBER AND LITHOGRAPHIC SYSTEM COMPRISING SAME AND METHOD OF MAKING SAME - What is disclosed includes OD-doped synthetic silica glass capable of being used in optical elements for use in lithography below about 300 nm. OD-doped synthetic silica glass was found to have significantly lower polarization-induced birefringence value than non-OD-doped silica glass with comparable concentration of OH. Also disclosed are processes for making OD-doped synthetic silica glasses, optical member comprising such glasses, and lithographic systems comprising such optical member. The glass is particularly suitable for immersion lithographic systems due to the exceptionally low polarization-induced birefringence values at about 193 nm. | 06-11-2009 |
| 20090081384 | Low Wetting Hysteresis Polysiloxane-Based Material and Method for Depositing Same - A polysiloxane-based material presents a predetermined structure or conformation such that the polysiloxane-based material comprises a ratio between a number of linear —Si—O— bonds and a number of cyclic —Si—O— bonds less than or equal to 0.4, and preferably less than or equal to 0.3. Such a polysiloxane-based material enables a wetting hysteresis less than 10°, and preferably less than 5° to be obtained. Such a low wetting hysteresis material can be achieved by chemical vapor deposition enhanced by a plasma wherein a precursor is injected. The precursor is selected from the group consisting of cyclic organosiloxanes such as octamethylcyclotetrasiloxane and derivatives thereof and cyclic organosilazanes such as octamethylcyclosilazane and derivatives thereof. A ratio between a power density dissipated in the plasma and a precursor flow rate injected in the plasma is less than or equal to 100 W.cm | 03-26-2009 |
| 20100098885 | PLASMA SILANIZATION SUPPORT METHOD AND SYSTEM - A plasma silanization system includes a processing vessel having a metal shelf and a non-metallic component support configured to elevate a component above the metal shelf to prevent excess silane deposition. A method of applying silane to a component in a plasma processing apparatus having a metal shelf includes placing a non-metallic component support on the metal shelf and placing a component on the non-metallic component support to prevent excess silane deposition. | 04-22-2010 |
| 20090011149 | SUBSTRATE PROCESSING METHOD - A method of forming a low-K dielectric film, comprises the steps of placing a substrate carrying thereon a low-K dielectric film on a stage, heating the low-K dielectric film on the stage, processing the low-K dielectric film by plasma of a processing gas containing a hydrogen gas, the plasma being excited while supplying the processing gas over the low-K dielectric film, wherein the plasma is excited within 90 seconds after placing the substrate upon the stage. | 01-08-2009 |
| 20090280268 | Method and apparatus for application of thin coatings from plasma onto inner surfaces of hollow containers - A method and an apparatus are proposed for simultaneously coating the inner walls of a plurality of hollow containers, such as bottles, with fluid-impermeable barrier layers applied by a PECVD method with the use of transversal antennas capable of creating plasma having density increased in the vicinity of the inner walls of the containers. The barrier-layer application period is divided into a coating period and a noncoating cooling period, with RF energy constantly maintained under working conditions with shunting thereof from the coating station to the dummy loads during noncoating periods used for cooling the plastic containers. The apparatus comprises a vacuum chamber with a conveyor that transports the containers in a preoriented state for interaction with a plurality of aligning elements that can be inserted into the container openings for subsequent fixation at equal distances in positions aligned with the antennas that can be inserted into the containers for generation of the coating-applying plasma. | 11-12-2009 |
| 20090324850 | EDGE HEALING AND FIELD REPAIR OF PLASMA COATING - Described are processes for repairing plastic glazing and for the local application of a plasma coating using a plasma depositing device to an edge created by the removal of excess or unwanted plastic from plastic. | 12-31-2009 |
| 20090017231 | NOVEL SILICON PRECURSORS TO MAKE ULTRA LOW-K FILMS WITH HIGH MECHANICAL PROPERTIES BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION - A method for depositing a low dielectric constant film on a substrate is provided. The low dielectric constant film is deposited by a process comprising reacting one or more organosilicon compounds and a porogen and then post-treating the film to create pores in the film. The one or more organosilicon compounds include compounds that have the general structure Si—C | 01-15-2009 |
| 20100151151 | METHOD OF FORMING LOW-K FILM HAVING CHEMICAL RESISTANCE - A method of forming a low-k film containing silicon and carbon on a substrate by plasma CVD, includes: supplying gas of a precursor having a Si—R—O—R—Si bond into a reaction space in which a substrate is placed; and exciting the gas in the reaction space, thereby depositing a film on the substrate. | 06-17-2010 |
| 20100239783 | METHODS OF FORMING MOLDS AND METHODS OF FORMING ARTICLES USING SAID MOLDS - A method of forming a working mold including placing a substrate near an electrode in a chamber, the substrate ( | 09-23-2010 |
| 20110129617 | Plasma system and method of producing a functional coating - A plasma system has at least one inductively coupled high-frequency plasma jet source having a burner body delimiting a plasma generating space having an outlet orifice for the plasma jet, a coil surrounding the plasma generating space in some areas, an inlet for supplying a gas and/or a precursor material into the plasma generating space and a high-frequency generator which is connected to the coil for igniting the plasma and for injecting an electric power into the plasma. The plasma jet source has an electric component using which the intensity of the plasma jet is variable periodically over time. In addition, a method of producing the functional coating on a substrate by using this plasma system is described. | 06-02-2011 |
| 20110151141 | CHEMICAL VAPOR DEPOSITION FOR AN INTERIOR OF A HOLLOW ARTICLE WITH HIGH ASPECT RATIO - A method and apparatus for plasma enhanced chemical vapor deposition to an interior region of a hollow, tubular, high aspect ratio workpiece are disclosed. A plurality of anodes are disposed in axially spaced apart arrangement, to the interior of the workpiece. A process gas is introduced into the region. A respective individualized DC or pulsed DC bias is applied to each of the anodes. The bias excites the process gas into a plasma. The workpiece is biased in a hollow cathode arrangement. Pressure is controlled in the interior region to maintain the plasma. An elongated support tube arranges the anodes, and receives a process gas tube. A current splitter provides a respective selected proportion of a total current to each anode. One or more notch diffusers or chamber diffusers may diffuse the process gas or a plasma moderating gas. Plasma impedance and distribution may be controlled using various means. | 06-23-2011 |
| 20080268174 | Apparatus and Method for Manufacturing an Optical Preform - The present invention relates to an apparatus and related method for manufacturing an optical preform. The present invention embraces a novel insert tube that is strategically positioned within a quartz substrate tube during the internal vapor deposition process. | 10-30-2008 |
| 20100330301 | APPARATUS AND METHOD FOR PROCESSING SUBSTRATE - A substrate processing apparatus includes a chamber defining a process space where a process is carried out with respect to a substrate, a first supply member located above the process space for supplying a first source gas toward the process space, a plasma source configured to generate an electric field in the process space to create radicals from the first source gas, and a second supply member configured to supply a second source gas above the substrate. The chamber includes a lower chamber in which a support member configured to allow the substrate to be placed thereon is installed. The lower chamber is open at a top thereof. The second supply member is installed at an upper end of the lower chamber for supplying the second source gas in a direction generally parallel to the substrate placed on the support member. The second source gas may be a silicon-containing gas. | 12-30-2010 |
| 20110135844 | LARGE AREA PLASMA PROCESSING CHAMBER WITH AT-ELECTRODE RF MATCHING - A plasma processing system having at-electrode RF matching and a method for processing substrates utilizing the same is provided. In one embodiment, the plasma processing system includes a chamber body, the substrate support, an electrode, a lid assembly and an RF tuning element. A substrate support is disposed in a processing volume defined in the chamber body. The electrode is positioned above the substrate support and below a cover of the lid assembly. The RF tuning element is disposed between the cover and the electrode and is coupled to the electrode. | 06-09-2011 |
| 20100189926 | PLASMA DEPOSITION APPARATUS AND METHOD FOR MAKING HIGH PURITY SILICON - A plasma deposition apparatus for making high purity silicon, including a chamber for depositing said high purity silicon, the chamber including a top defining substantially an upper end of the chamber; one or more sides having an upper end and a lower end, the top substantially sealingly joining the upper end of the one or more sides; a base defining substantially a lower end of the chamber, the base substantially sealingly joining the lower end of the one or more sides; and at least one induction coupled plasma torch disposed in the top, the at least one induction coupled plasma torch oriented in a substantially vertical position producing a plasma flame downward from the top towards the base, the plasma flame defining a reaction zone for reacting one or more reactants to produce the high purity. | 07-29-2010 |
| 20090104376 | GAS DIFFUSION SHOWER HEAD DESIGN FOR LARGE AREA PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION - Embodiments of a gas distribution plate for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. At least one of the gas passages has a right cylindrical shape for a portion of its length extending from the upstream side and a coaxial conical shape for the remainder length of the diffuser plate, the upstream end of the conical portion having substantially the same diameter as the right cylindrical portion and the downstream end of the conical portion having a larger diameter. The gas distribution plate is relatively easy to manufacture and provides good chamber cleaning rate, good thin film deposition uniformity and good thin film deposition rate. The gas distribution plate also has the advantage of reduced chamber cleaning residues on the diffuser surface and reduced incorporation of the cleaning residues in the thin film being deposited. | 04-23-2009 |
| 20120156393 | Deposition of Hydrogenated Thin Film - A hydrogenated thin film is formed in a controlled vacuum on a substrate by evaporating one or more solid materials and passing the resulting vapor and a hydrogen-containing gas into a space between two electrodes. One of the electrodes includes openings for allowing the vapor to enter the space. Plasma is generated within the space to cause dissociation of the hydrogen-containing gas and promote a reaction between the material(s) and hydrogen-containing gas. | 06-21-2012 |
| 20100119733 | METHOD OF IMMOBILIZING ACTIVE MATERIAL ON SURFACE OF SUBSTRATE - Provided is a method of immobilizing an active material on a surface of a substrate. The method including cleaning a substrate, functionalizing a surface of the substrate using a hydroxyl group, functionalizing the surface of the substrate at atmospheric pressure using a vaporized organic silane compound, and immobilizing an active material to an end of the surface of the substrate. Therefore, since evacuation or the use of carrier gas is not necessary, a uniform, high-density, single-molecular, silane compound film can be formed inexpensively, simply, and reproducibly, and an active material can be immobilized to the single-molecular silane compound film. | 05-13-2010 |
| 20110091662 | COATING METHOD AND DEVICE USING A PLASMA-ENHANCED CHEMICAL REACTION - The invention relates to a method and a device for the plasma-enhanced deposition of a layer on a substrate ( | 04-21-2011 |
| 20100247806 | METHOD OF PRODUCING GAS BARRIER LAYER - The producing method of a gas barrier layer uses a material having at least one Si—H bond, a material having at least one N-H bond, and at least one of nitrogen gas, hydrogen gas and a noble gas and forms the gas barrier layer by plasma-enhanced CVD using a plasma in which an emission intensity A of emission at 414 nm, an emission intensity B of emission at 336 nm, an emission intensity C of emission at 337 nm, and an emission intensity D of emission at 656 nm satisfy formulas a to c: | 09-30-2010 |
| 20120219728 | METHODS OF SURFACE TREATING POROUS PARTICLES - A method of treating porous particles, each porous particle having an external surface and a multiplicity of pores with interior pore surfaces, by contacting the external surface with a hydrophobic agent while causing the interior pore surfaces to remain substantially free of the hydrophobic agent. In certain illustrative embodiments, treating the external surfaces of the porous particles includes exposing the porous particles to at least one of water vapor, methanol vapor, or ethanol vapor; and subsequently exposing the porous particles to a second vapor comprising a reactive organosilane compound which reacts to form the hydrophobic agent. In some particular illustrative embodiments, at least a portion of the external surface of the treated porous particle includes hydrophobic groups, the hydrophobic groups selected from at least one of alkyl or aryl groups optionally substituted with fluorine, and siloxanes having alkyl groups, aryl groups, or combinations thereof. | 08-30-2012 |
| 20100233385 | APPARATUS AND METHOD OF FORMING THIN LAYERS ON SUBSTRATE SURFACES - The invention relates to an apparatus and to a method of forming thin films on substrate surfaces. It is the object of the invention to provide possibilities with which thin layers can be manufactured on substrate surfaces which have a specific layer material formation with desired properties. The apparatus in accordance with the invention is made such that a feed is present for at least one gaseous precursor, which contributes to the layer formation, at a reaction chamber region above a substrate surface to be coated. A source which is a plasma source and which emits electromagnetic radiation is moreover arranged such that a photolytic activation of atoms and/or molecules of the precursor(s) takes place with the emitted electromagnetic radiation. In this respect, the plasma source should be arranged and should also be operated such that no direct influence of the plasma on the substrate surface and on the precursors resulting in the layer formation takes place. | 09-16-2010 |
| 427579000 | Silicon oxides or nitrides | 52 |
| 20090123664 | INTERLAYER INSULATING FILM FORMATION METHOD - An interlayer insulating film formation method for forming an interlayer insulating film on a substrate includes the step of forming the interlayer insulating film through plasma CVD by using an organic silicon compound including no oxygen atom and an organic silicon compound including an oxygen atom as materials. | 05-14-2009 |
| 20100062183 | METHOD OF PRODUCING GAS BARRIER FILM - A method of producing a gas barrier film comprises the steps of: supplying a material gas including silane gas, ammonia gas and at least one of nitrogen gas and hydrogen gas to a process chamber; keeping the process chamber at an internal pressure of 20 to 200 Pa; holding a substrate in the process chamber at a substrate temperature of not more than 70° C.; forming a bias potential of −100 V or less at the substrate; and supplying power P (W) to the material gas so as to have a ratio P/Q of the power P to a silane gas flow rate Q (sccm) of 15 to 30 W/sccm to generate plasma, thereby depositing a silicon nitride layer on a surface of the substrate. | 03-11-2010 |
| 20100151152 | Non-Stoichiometric SiOxNy Optical Filter Fabrication - A non-stoichiometric SiO | 06-17-2010 |
| 20130078392 | HALOGENATED ORGANOAMINOSILANE PRECURSORS AND METHODS FOR DEPOSITING FILMS COMPRISING SAME - Described herein are precursors and methods of forming films. In one aspect, there is provided a precursor having Formula I: | 03-28-2013 |
| 20090041952 | METHOD OF DEPOSITING SILICON OXIDE FILMS - Methods of depositing a silicon oxide film are disclosed. One embodiment is a plasma enhanced atomic layer deposition (PEALD) process that includes supplying a vapor phase silicon precursor, such as a diaminosilane compound, to a substrate, and supplying oxygen plasma to the substrate. Another embodiment is a pulsed hybrid method between atomic layer deposition (ALD) and chemical vapor deposition (CVD). In the other embodiment, a vapor phase silicon precursor, such as a diaminosilane compound, is supplied to a substrate while ozone gas is continuously or discontinuously supplied to the substrate. | 02-12-2009 |
| 20090011150 | Remote Plasma Atomic Layer Deposition Apparatus and Method Using Dc Bias - A conventional plasma applied ALD apparatus has a problem in that physical shock is directly imposed on a substrate and a thin film thereby damaging the thin film. Further, many reports have said that since an apparatus for controlling plasma energy is not arranged well, the thin film is not formed uniformly due to plasma nonuniformity. Therefore, there is provided a remote plasma atomic layer deposition apparatus using a DC bias comprising: a reaction chamber having an inner space; a substrate supporting body on which a substrate on which a thin film is to be formed is loaded arranged at one side of the inner space of the reaction chamber; a remote plasma generating unit arranged outside of the reaction chamber to supply a remote plasma into the inner space of the reaction chamber; a DC bias unit controlling energy of the remote plasma; and a source gas supply unit supplying a source gas for forming the thin film into the reaction chamber. | 01-08-2009 |
| 20110129618 | VERTICAL FILM FORMATION APPARATUS AND METHOD FOR USING SAME - A method for using a vertical film formation apparatus includes performing a coating process inside the process container without product target objects present therein to cover an inner surface of the process container with a coating film, and then performing a film formation process inside the process container accommodating the holder with the product target objects placed thereon to form a predetermined film on the product target objects. The coating process alternately supplies the first and second process gases into the process container without turning either of the first and second process gases into plasma. The film formation process alternately supplies the first and second process gases into the process container while turning at least one of the first and second process gases into plasma. | 06-02-2011 |
| 20120027956 | MODIFICATION OF NITRIDE TOP LAYER - A method of forming a nitride film is disclosed. In one embodiment, the method comprises performing an ending film deposition process that differs from the main film deposition process in terms of the flow rates of the reactive and ion source gases, and maintaining acceleration power of a CVD tool during the ending film deposition process. A post deposition process may also be used to remove a denser top layer of nitride, resulting in a nitride film having a consistent density. | 02-02-2012 |
| 20080260969 | Method for Producing Silicon Nitride Films - (Problem) To provide a method for producing silicon nitride films by vapor deposition that, while employing trisilylamine as precursor, can produce silicon nitride films that exhibit excellent film properties and can do so at relatively low temperatures and relatively high growth rates. (Solution) Method for producing silicon nitride film, said method being characterized by feeding gaseous trisilylamine and gaseous nitrogen source comprising at least two amine-type compounds selected from amine-type compounds with formula (1) NR | 10-23-2008 |
| 20090087587 | METHOD OF FORMING SILICON NITRIDE FILMS - The silicon nitride film-forming method includes a step of supplying a gas material including silane gas, ammonia gas and nitrogen gas in such a manner that a flow rate of the nitrogen gas is 0.2 to 20 times a total flow rate of the silane gas and the ammonia gas, and a step of carrying out inductively coupled plasma-enhanced chemical vapor deposition to form a silicon nitride film. This method is capable of forming a silicon nitride film at a high film deposition rate. | 04-02-2009 |
| 20090087586 | METHOD OF FORMING SILICON NITRIDE FILMS - The silicon nitride film-forming method includes a step of supplying a gas material including silane gas, ammonia gas and an inert gas in such a manner that a flow rate of the inert gas is 1 to 10 times a total flow rate of the silane gas and the ammonia gas, and a step of carrying out inductively coupled plasma-enhanced chemical vapor deposition to form a silicon nitride film. The silicon nitride film which is high in density and exhibits good water vapor barrier properties is formed even at a low film deposition temperature. | 04-02-2009 |
| 20090263594 | LOW-FREQUENCY BIAS POWER IN HDP-CVD PROCESSES - A substrate processing system has a housing that defines a process chamber. A substrate holder disposed within the process chamber supports a substrate during substrate processing. A gas-delivery system introduces a gas into the process chamber. A pressure-control system maintains a selected pressure within the process chamber. A high-density plasma generating system forms a plasma having a density greater than 10 | 10-22-2009 |
| 20100124621 | Method of Forming Insulation Film by Modified PEALD - A method of forming an insulation film by alternating multiple times, respectively, a process of adsorbing a precursor onto a substrate and a process of treating the adsorbed surface using reactant gas and a plasma, wherein a plasma is applied in the process of supplying the precursor. | 05-20-2010 |
| 20090274852 | METHOD FOR FABRICATING HIGH COMPRESSIVE STRESS FILM AND STRAINED-SILICON TRANSISTORS - A method for fabricating strained silicon transistors is disclosed. First, a semiconductor substrate is provided, in which the semiconductor substrate includes a gate, at least a spacer, and a source/drain region formed thereon. Next, a precursor, silane, and ammonia are injected, in which the precursor is reacted with silane and ammonia to form a high compressive stress film on the surface of the gate, the spacer, and the source/drain region. Preferably, the high compressive stress film can be utilized in the fabrication of a poly stressor, a contact etch stop layer, and dual contact etch stop layers. | 11-05-2009 |
| 20080274302 | FILM FORMATION METHOD AND APPARATUS FOR SEMICONDUCTOR PROCESS - A film formation apparatus for a semiconductor process includes a process gas supply system configured to supply process gases. The process gas supply system includes a gas mixture tank configured to mix first and third process gases to form a mixture gas, a mixture gas supply line configured to supply the mixture gas from the gas mixture tank to a process field, a second process gas supply circuit having a second process gas supply line configured to supply a second process gas to the process field without passing through the gas mixture tank, and first and second switching valves disposed on the mixture gas supply line and the second process gas supply line, respectively. A control section controls the first and second switching valves to be opened and closed so as to alternately and pulse-wise supply the mixture gas and the second process gas to the process field. | 11-06-2008 |
| 20080274301 | Method for producing patterns in a polymer layer - Polymer sites are formed on a support. These sites are subjected to a plasma deposition of dielectric material and preferably react with this plasma so as to form openings at the level of said sites. A pattern structure is then formed in the dielectric material and/or in the polymer. | 11-06-2008 |
| 20090181187 | PROCESS FOR MANUFACTURING PERMEABLE DIELECTRIC FILMS - The invention relates to a process for manufacturing a permeable dielectric film, which comprises:
| 07-16-2009 |
| 20090004404 | METHOD FOR MANUFACTURING A PREFORM FOR OPTICAL FIBRES BY MEANS OF A VAPOUR DEPOSITION PROCESS - The present invention relates to a method for manufacturing a preform for optical fibres by means of a vapour deposition process, wherein an intermediate step is carried out between one deposition phase and the next deposition phase(s), wherein the intermediate step comprises supplying an etching gas to the supply side of the hollow substrate tube. | 01-01-2009 |
| 20090324851 | METHOD FOR FABRICATING A METAL-INSULATOR-METAL CAPACITOR - A method for fabricating a metal-insulator-metal (MIM) capacitor includes providing a substrate comprising a bottom electrode, forming a dielectric layer positioned on the bottom electrode, and forming a top electrode positioned on the dielectric layer. The dielectric layer includes a silicon nitride film, the silicon nitride film has a plurality of Si—H bonds and a plurality of N—H bonds, and a ratio of Si—H bonds to N—H bonds being equal to or smaller than 0.5. | 12-31-2009 |
| 20090252893 | Plasma discharge treatment apparatus, and method of manufacturing gas barrier film - Provide is a method of preparing a highly-functional film capable of reducing surface failure and of improving the yield, and a manufacturing apparatus thereof. This is a plasma discharge treatment apparatus to plasma-discharge-treat for the surface of a substrate conveyed between a winder and an unwinder at atmospheric pressure or approximately atmospheric pressure, and is a plasma discharge treatment apparatus by which the substrate is conveyed with no contact by only nip roller separating the discharge section from outside. Provided is a method of preparing a gas barrier film exhibiting high gas barrier, together with reduction of surface failure (crack failure) during gas barrier thin layer formation. The surface on the gas barrier thin layer side of the gas barrier film has a curvature radius of at least 75 mm during conveyance, and the surface on the opposite side has a curvature radius of at least 37.5 mm. | 10-08-2009 |
| 20090252894 | MOISTURE BARRIER COATINGS FOR ORGANIC LIGHT EMITTING DIODE DEVICES - A barrier assembly having a flexible or rigid substrate, an organic electronic device, and one or more layers of diamond-like film. The diamond-like film layers can be used to mount, cover, encapsulate or form composite assemblies for protection of moisture or oxygen sensitive articles such as organic light emitting diode devices, photovoltaic devices, organic transistors, and inorganic thin film transistors. The diamond-like film layers can also provide for edge sealing of adhesive bond lines in the assemblies. | 10-08-2009 |
| 20110111137 | CURING NON-CARBON FLOWABLE CVD FILMS - A method of forming a silicon oxide layer is described. The method may include the steps of mixing a carbon-free silicon-containing precursor with a radical-nitrogen-and/or-hydrogen precursor, and depositing a silicon-nitrogen-and-hydrogen-containing layer on a substrate. The conversion of the silicon-nitrogen-and-hydrogen-containing layer to a silicon-and-oxygen-containing layer is then initiated by a low temperature anneal (a “cure”) in an ozone-containing atmosphere. The conversion of the silicon-and-nitrogen film to silicon oxide in the ozone-containing atmosphere may be incomplete and augmented by a higher temperature anneal in an oxygen-containing environment. | 05-12-2011 |
| 20100323127 | ATMOSPHERIC PRESSURE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION PROCESS - A process for depositing a film coating on an exposed surface of a substrate by the steps of: (a) providing a substrate having at least one exposed surface; and (b) flowing a gaseous mixture into an atmospheric pressure plasma that is in contact with at least one exposed surface of said substrate to form a plasma enhanced chemical vapor deposition coating on the substrate, the gaseous mixture containing an oxidizing gas and a precursor selected from the group consisting of: a vinylalkoxysilane, a vinylalkylsilane, a vinylalkylalkoxysilane, an allyalkoxysilane, an allylalkylsilane, an allylalkylalkoxysilane, an alkenylalkoxysilane, an alkenylalkylsilane, and an alkenylalkylalkoxysilane, the oxygen content of the gaseous mixture being greater than ten percent by volume. | 12-23-2010 |
| 20100310791 | PLASMA PROCESSING METHOD AND PLASMA PROCESSING SYSTEM - In order to provide a plasma processing method and a plasma processing system which is capable of embedding a SiN film can be performed by applying bias power, in a plasma processing method for depositing a silicon nitride film on a substrate | 12-09-2010 |
| 20110129619 | FILM FORMATION METHOD AND APPARATUS - A film formation method includes setting a target object at a temperature of 150 to 550° C., the target object being placed inside the process container configured to hold a vacuum state therein, and then, repeating a cycle alternately including a first supply step and a second supply step a plurality of times to form a silicon nitride film on the target object. The first supply step is a step of supplying monochlorosilane gas as an Si source into the process container while setting the process container at a pressure of 66.65 to 666.5 Pa therein. The second supply step is a step of supplying a nitrogen-containing gas as a nitriding gas into the process container. | 06-02-2011 |
| 20090035484 | Plasma processing method - Pulsated microwaves are supplied to a wave guide tube from a microwave generation unit through a matching circuit. The microwaves are supplied through an inner conductor to a planar antenna member. The microwaves are radiated from the planar antenna member through a microwave transmission plate into space above a wafer within a chamber. An electromagnetic field is formed in the chamber by pulsated microwaves radiated into the chamber from the planar antenna member through the microwave transmission plate, turning an Ar gas, H | 02-05-2009 |
| 20090214801 | ETHYLENE/TETRAFLUOROETHYLENE COPOLYMER MOLDED PRODUCT AND METHOD FOR ITS PRODUCTION - To provide an ethylene/tetrafluoroethylene (ETFE) copolymer molded product of which the surface has a high hydrophilicity and which is excellent in the light transmission property; and a method for producing the molded product. | 08-27-2009 |
| 20090022908 | PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION TECHNOLOGY FOR LARGE-SIZE PROCESSING - Methods for forming a film stack suitable for transistor fabrication using a low temperature plasma enhanced chemical vapor deposition (PECVD) process are provided. In one embodiment, the method includes providing a substrate in a PECVD chamber, depositing a dual layer SiNx film on the substrate, depositing a dual layer amorphous silicon film on the SiNx film, and depositing a n-doped silicon film on the dual layer amorphous silicon film. The aforementioned films are deposited at a temperature less than about 300 degrees Celsius in the same PECVD chamber | 01-22-2009 |
| 20100034985 | Apparatus and Method for the Plasma Treatment of Hollow Bodies - The present invention refers to an apparatus for the plasma treatment of hollow bodies, comprising a vacuum treatment chamber and means for generating the plasma, which apparatus is characterized in that the means for generating the plasma comprise an electrode of a substantially U-shaped cross-section, which is arranged in the vacuum treatment chamber, the hollow bodies immersing at least in part into the U-shaped electrode when the plasma treatment is carried out, and being moved at least temporarily relative to the U-shaped electrode. Furthermore, the present invention refers to a method for the plasma treatment of hollow bodies, in which the hollow bodies are moved into a vacuum treatment chamber in which the plasma treatment is carried out and the plasma is generated by an electromagnetic field, which method is characterized in that the hollow bodies immerse at least in part into the electromagnetic field when the plasma treatment is carried out, and that the hollow bodies are moved at least temporarily relative to the electromagnetic field. | 02-11-2010 |
| 20110151142 | PECVD MULTI-STEP PROCESSING WITH CONTINUOUS PLASMA - Embodiments of the present invention provide methods for reducing defects during multi-layer deposition. In one embodiment, the method includes exposing the substrate to a first gas mixture and an inert gas in the presence of a plasma to deposit a first material layer on the substrate, terminating the first gas mixture when a desired thickness of the first material is achieved while still maintaining the plasma and flowing the inert gas, and exposing the substrate to the inert gas and a second gas mixture that are compatible with the first gas mixture in the presence of the plasma to deposit a second material layer over the first material layer in the same processing chamber, wherein the first material layer and the second material layer are different from each other. | 06-23-2011 |
| 20080268176 | Method of improving the uniformity of PECVD-deposited thin films - We have discovered that controlling a combination of PECVD deposition process parameters during deposition of silicon-containing thin film provides improved control over surface standing wave effects. By minimizing surface standing wave effects, the uniformity of film properties (particularly film thickness) across a substrate surface onto which the films have been deposited is improved. | 10-30-2008 |
| 20100189928 | Method for Manufacturing an Optical Fiber Preform - A method for manufacturing an optical fiber preform includes the steps of depositing an inner cladding and a central core inside a fluorine doped silica tube and thereafter collapsing the silica tube to form a primary preform. The fluorine doped silica tube has a cross section area that is no more than about 15 percent smaller than the cross section area of the resulting primary preform. The present method facilitates reduced-cost manufacturing of a high-capacity optical fiber preform, which may be drawn to produce an optical fiber having reduced transmission losses. | 07-29-2010 |
| 20100189927 | FILM FORMATION APPARATUS AND METHOD FOR USING SAME - A method for using a film formation apparatus includes performing a main cleaning process and a post cleaning process in this order inside a reaction chamber. The main cleaning process is arranged to supply a cleaning gas containing fluorine into the reaction chamber while exhausting gas from inside the reaction chamber, thereby etching a film formation by-product containing silicon. The post cleaning process is arranged to remove a silicon-containing fluoride generated by the main cleaning process and remaining inside the reaction chamber and to alternately repeat, a plurality of times, supplying an oxidizing gas into the reaction chamber to transform the silicon-containing fluoride into an intermediate product by oxidization, and supplying hydrogen fluoride gas into the reaction chamber while exhausting gas from inside the reaction chamber to remove the intermediate product by a reaction between the hydrogen fluoride gas and the intermediate product. | 07-29-2010 |
| 20100255218 | Method of Depositing Silicon Oxide Film by Plasma Enhanced Atomic Layer Deposition at Low Temperature - A method of depositing a silicon oxide film on a resist pattern or etched lines formed on a substrate by plasma enhanced atomic layer deposition (PEALD) includes: providing a substrate on which a resist pattern or etched lines are formed in a PEALD reactor; controlling a temperature of a susceptor on which the substrate is placed at less than 50° C. as a deposition temperature; introducing a silicon-containing precursor and an oxygen-supplying reactant to the PEALD reactor and applying RF power therein in a cycle, while the deposition temperature is controlled substantially or nearly at a constant temperature of less than 50° C., thereby depositing a silicon oxide atomic layer on the resist pattern or etched lines; and repeating the cycle multiple times substantially or nearly at the constant temperature to deposit a silicon oxide atomic film on the resist pattern or etched lines. | 10-07-2010 |
| 20120045593 | PLASMA CVD APPARATUS - In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamber | 02-23-2012 |
| 20120009356 | CONTAMINATION REDUCING LINER FOR INDUCTIVELY COUPLED CHAMBER - A method and apparatus for depositing a film through a plasma enhance chemical vapor deposition process is provided. In one embodiment, an apparatus includes a processing chamber having a coil disposed in the chamber and routed proximate the chamber wall. A liner is disposed over the coil and is protected by a coating of a material, wherein the coating of material has a film property similar to the liner. In one embodiment, the liner is a silicon containing material and is protected by the coating of the material. Thus, in the event that some of the protective coating of material is inadvertently sputtered, the sputter material is not a source of contamination if deposited on the substrate along with the deposited deposition film on the substrate. | 01-12-2012 |
| 20080268175 | Method of controlling film uniformity of a cvd-deposited silicon nitride film during deposition over a large substrate surface - We have discovered that adding H | 10-30-2008 |
| 20120015113 | METHODS FOR FORMING LOW STRESS DIELECTRIC FILMS - A method for forming a multi-layer silicon oxide film on a substrate includes performing a deposition cycle that comprises depositing a silicon oxide layer using a thermal chemical vapor deposition (CVD) process and depositing a silicon oxide layer using a plasma enhanced chemical vapor deposition (PECVD) process. The deposition cycle is repeated a specified number of times to form the multi-layer silicon oxide film comprising a plurality of silicon oxide layers formed using the thermal CVD process and a plurality of silicon oxide layers formed using the PECVD process. Each silicon oxide layer formed using the thermal CVD process is adjacent to at least one silicon oxide layer formed using the PECVD process. | 01-19-2012 |
| 20110165347 | DIELECTRIC FILM FORMATION USING INERT GAS EXCITATION - Methods of forming a silicon-and-nitrogen-containing layers and silicon oxide layers are described. The methods include the steps of mixing a carbon-free silicon-containing precursor with plasma effluents, and depositing a silicon-and-nitrogen-containing layer on a substrate. The silicon-and-nitrogen-containing layers may be made flowable or conformal by selection of the flow rate of excited effluents from a remote plasma region into the substrate processing region. The plasma effluents are formed in a plasma by flowing inert gas(es) into the plasma. The silicon-and-nitrogen-containing layer may be converted to a silicon-and-oxygen-containing layer by curing and annealing the film. | 07-07-2011 |
| 20120058282 | Method of Forming Conformal Film Having Si-N Bonds on High-Aspect Ratio Pattern - A method of forming a conformal dielectric film having Si—N bonds on a substrate having a patterned surface includes: introducing a reactant gas into a reaction space; introducing a silicon precursor in pulses of less than 5-second duration into the reaction space; applying a first RF power to the reaction space during the pulse of the silicon precursor; applying a second RF power to the reaction space during the interval of the silicon precursor pulse, wherein an average intensity of the second RF power during the interval of the silicon precursor pulse is greater than that of the first RF power during the pulse of the silicon precursor; and repeating the cycle to form a conformal dielectric film having Si—N bonds with a desired thickness on the patterned surface of the substrate. | 03-08-2012 |
| 20120128896 | STAIN-RESISTANT CONTAINER AND METHOD - Stain resistant containers can be prepared in a three step process involving treatment with a nitrogen gas plasma, depositing a plasma enhanced chemical vapor deposition (PECVD) organosilicon thin film onto the interior surface of the container, followed by treatment with an oxygen gas plasma. An apparatus for the process is described, including an automated apparatus for treating multiple containers and multiple chambers of containers. | 05-24-2012 |
| 20120128897 | Organoaminosilane Precursors and Methods for Depositing Films Comprising Same - Described herein are precursors and methods of forming dielectric films. In one aspect, there is provided a silicon precursor having the following formula I: | 05-24-2012 |
| 20100209624 | FILM-FORMING APPARATUS AND FILM-FORMING METHOD - The present invention is a film-forming apparatus including: a longitudinal tubular processing container in which a vacuum can be created; an object-to-be-processed holding unit that holds a plurality of objects to be processed in a tier-like manner and that can be inserted into and taken out from the processing container; a heating unit provided around the processing container; a silane-based-gas supplying unit that supplies a silane-based gas into the processing container, the silane-based gas including no halogen element; a nitriding-gas supplying unit that supplies a nitriding gas into the processing container; an activating unit that activates the nitriding gas by means of plasma; and a controlling unit that controls the silane-based-gas supplying unit, the nitriding-gas supplying unit and the activating unit, in such a manner that the silane-based gas and the nitriding gas are supplied into the processing container at the same time while the nitriding gas is activated, in order to form a predetermined thin film on each of the plurality of objects to be processed. | 08-19-2010 |
| 20120177846 | RADICAL STEAM CVD - Methods of forming silicon oxide layers are described. The methods include concurrently combining plasma-excited (radical) steam with an unexcited silicon precursor. Nitrogen may be supplied through the plasma-excited route (e.g. by adding ammonia to the steam) and/or by choosing a nitrogen-containing unexcited silicon precursor. The methods result in depositing a silicon-oxygen-and-nitrogen-containing layer on a substrate. The oxygen content of the silicon-oxygen-and-nitrogen-containing layer is then increased to form a silicon oxide layer which may contain little or no nitrogen. The increase in oxygen content may be brought about by annealing the layer in the presence of an oxygen-containing atmosphere and the density of the film may be increased further by raising the temperature even higher in an inert environment. | 07-12-2012 |
| 20090061110 | Process for treating a surface - A process for treating a surface of an aluminium component and an aluminium component of this kind are described. The process described is characterized in that a silicon oxide layer is applied to the surface of the aluminium component. | 03-05-2009 |
| 20090061109 | PROCESS FOR PRODUCING ELECTROPHOTOGRAPHIC ROLLER MEMBER - A process for producing an electrophotographic roller member comprising a roller base member having a conductive mandrel and an elastic layer, and a film on the elastic layer. The process comprises the step of forming the film by plasma CVD. The step comprises the steps of: placing the roller base member in a chamber in such a way that the distance between the surface of the elastic layer and flat-plate electrodes is 20 mm or more to 100 mm or less; feeding a source gas into the chamber so as to have a pressure of from 13.3 Pa or more to 666.6 Pa or less; and applying to an electrode an electric power of from 0.3 W/cm | 03-05-2009 |
| 20100291321 | Dielectric Barrier Deposition Using Nitrogen Containing Precursor - A process for forming a silicon carbonitride barrier dielectric film between a dielectric film and a metal interconnect of an integrated circuit substrate, comprising the steps of;
| 11-18-2010 |
| 20120263888 | FILM FORMATION APPARATUS FOR SEMICONDUCTOR PROCESS AND METHOD FOR USING THE SAME - A method is provided for using a film formation apparatus including a process container having an inner surface, which contains as a main component a material selected from the group consisting of quartz and silicon carbide. The method includes performing a film formation process to form a silicon nitride film on a product target substrate inside the process container, and then, unloading the product target substrate from the process container. Thereafter, the method includes supplying an oxidizing gas into the process container with no product target substrate accommodated therein, thereby performing an oxidation process to change by-product films deposited on the inner surface of the process container into a composition richer in oxygen than nitrogen, at a part of the by-product films from a surface thereof to a predetermined depth. | 10-18-2012 |
| 20120269989 | LOW TEMPERATURE SILICON OXIDE CONVERSION - A method of forming a silicon oxide layer is described. The method first deposits a silicon-nitrogen-and-hydrogen-containing (polysilazane) film by radical-component chemical vapor deposition (CVD). The polysilazane film is converted to silicon oxide by exposing the polysilazane film to humidity at low substrate temperature. The polysilazane film may also be dipped in a liquid having both oxygen and hydrogen, such as water, hydrogen peroxide and or ammonium hydroxide. These conversion techniques may be used separately or in a sequential combination. Conversion techniques described herein hasten conversion, produce manufacturing-worthy films and remove the requirement of a high temperature oxidation treatment. An ozone treatment may precede the conversion technique(s). | 10-25-2012 |
| 20110223358 | METHOD OF MANUFACTURING GAS BARRIER FILM - The method of manufacturing a gas barrier film feeds long lengths of a substrate and forms a silicon nitride film as the gas barrier film on the substrate by a capacitively coupled plasma-enhanced CVD technique while transporting the substrate in a longitudinal direction. Gaseous raw materials using in the forming step of the silicon nitride film includes at least silane gas and ammonia gas, and a ratio P/Q [W/sccm] is not less than 1 when a flow rate of the silane gas is denoted as Q [sccm] and a power input for generating a capacitively coupled plasma is denoted as P [W], a tension applied to the substrate transported between two transporting elements is not more than 100 [N/m], and a pair of electrodes for at least forming the silicon nitride film on the substrate is interposed between the two transporting elements. | 09-15-2011 |
| 20110236600 | Smooth Silicon-Containing Films - Methods and hardware for depositing ultra-smooth silicon-containing films and film stacks are described. In one example, an embodiment of a method for forming a silicon-containing film on a substrate in a plasma-enhanced chemical vapor deposition apparatus is disclosed, the method including supplying a silicon-containing reactant to the plasma-enhanced chemical vapor deposition apparatus; supplying a co-reactant to the plasma-enhanced chemical vapor deposition apparatus; supplying a capacitively-coupled plasma to a process station of the plasma-enhanced chemical vapor deposition apparatus, the plasma including silicon radicals generated from the silicon-containing reactant and co-reactant radicals generated from the co-reactant; and depositing the silicon-containing film on the substrate, the silicon-containing film having a refractive index of between 1.4 and 2.1, the silicon-containing film further having an absolute roughness of less than or equal to 4.5 Å as measured on a silicon substrate. | 09-29-2011 |
| 20110159213 | CHEMICAL VAPOR DEPOSITION IMPROVEMENTS THROUGH RADICAL-COMPONENT MODIFICATION - A method of forming a silicon oxide layer is described. The method may include the steps of mixing a carbon-free silicon-containing precursor with a radical-nitrogen precursor, and depositing a silicon-and-nitrogen-containing layer on a substrate. The radical-nitrogen precursor is formed in a plasma by flowing ammonia and nitrogen (N | 06-30-2011 |
