Entries |
Document | Title | Date |
20080199632 | Self-Limiting Thin Film Synthesis Achieved by Pulsed Plasma-Enhanced Chemical Vapor Deposition | 08-21-2008 |
20080241421 | OPTOELECTRONIC DEVICE AND METHOD OF FABRICATING THE SAME - The invention provides an optoelectronic device and the fabrication thereof. The method according to the invention, firstly, prepares a substrate. Then, the method forms a multi-layer structure on the substrate. Afterward, by an atomic layer deposition based process, the method forms a passivation layer overlaying the multi-layer structure. | 10-02-2008 |
20080254231 | METHOD OF FORMING PROTECTION LAYER ON CONTOUR OF WORKPIECE - The invention provides a method of forming a protection layer on a contour of a workpiece. The workpiece is made of at least one metal and/or at least one alloy. The method according to the invention forms an inorganic layer on the contour of the workpiece by an atomic layer deposition process and/or a plasma-enhanced atomic layer deposition process (or a plasma-assisted atomic layer deposition process), and the inorganic layer serves as the protection layer. | 10-16-2008 |
20080260967 | APPARATUS AND METHOD FOR INTEGRATED SURFACE TREATMENT AND FILM DEPOSITION - The embodiments fill the needs of systems and processes that perform substrate surface treatment to provide homogenous, clean, and sometimes activated surface in order to provide good adhesion between layers to improve metal migration and void propagation. In one exemplary embodiment, a chamber for performing surface treatment and film deposition is provided. The chamber includes a first proximity head for substrate surface treatment configured to dispense a first treatment gas to treat a portion of a surface of a substrate under the first proximity head for substrate surface treatment. The chamber also includes a first proximity head for atomic layer deposition (ALD) configured to sequentially dispensing a first reactant gas and a first purging gas to deposit a first ALD film under the second proximity head for ALD. | 10-23-2008 |
20080305276 | Method of Applying Hot Gas Anticorrosion Layers - A method for applying hot gas anticorrosion layers to high-temperature-resistant alloys, either nickel-based or cobalt-based alloys, in the form of a gradient layer consisting of one or more elements of the platinum group in combination with aluminum. The components are introduced into a directional high-temperature, high-enthalpy, free jet of solid, liquid or gaseous precursors in mixing ratios such that defined concentration gradients can be established in the layer. | 12-11-2008 |
20090011147 | PHOTON INDUCED FORMATION OF METAL COMPRISING ELONGATED NANOSTRUCTURES - The preferred embodiments provide a method for forming at least one metal comprising elongated nanostructure on a substrate. The method comprises exposing a metal halide compound surface to a photon comprising ambient to initiate formation of the at least one metal comprising elongated nanostructure. The preferred embodiments also provide metal comprising elongated nanostructures obtained by the method according to preferred embodiments. | 01-08-2009 |
20090017230 | Corrosion-resistant internal coating method using a germanium-containing precursor and hollow cathode techniques - Enhanced corrosion resistance is achieved in a coating by using a germanium-containing precursor and hollow cathode techniques to form a first layer directly on the surface of a workpiece, prior to forming an outer layer, such as a layer of diamond-like carbon (DLC). The use of a germanium or germanium-carbide precursor reduces film stress and enables an increase in the thickness of the subsequently formed DLC. Germanium incorporation also reduces the porosity of the layer. In one embodiment, a cap layer containing germanium is added after the DLC in order to further reduce the susceptibility of the coating to chemical penetration from the top. | 01-15-2009 |
20090022907 | BARRIER COATINGS - A barrier coating of organic-inorganic composition, the barrier coating having optical properties that are substantially uniform along an axis of light transmission, said axis oriented substantially perpendicular to the surface of the coating. | 01-22-2009 |
20090087585 | DEPOSITION PROCESSES FOR TITANIUM NITRIDE BARRIER AND ALUMINUM - Embodiments described herein provide a method for forming two titanium nitride materials by different PVD processes, such that a metallic titanium nitride layer is initially formed by a PVD process in a metallic mode and a titanium nitride retarding layer is formed over a portion of the metallic titanium nitride layer by a PVD process in a poison mode. Subsequently, a first aluminum layer, such as an aluminum seed layer, may be selectively deposited on exposed portions of the metallic titanium nitride layer by a CVD process. Thereafter, a second aluminum layer, such as an aluminum bulk layer, may be deposited on exposed portions of the first aluminum layer and the titanium nitride retarding layer during an aluminum PVD process. | 04-02-2009 |
20090098310 | METHOD FOR BONDING A TANTALUM STRUCTURE TO A COBALT-ALLOY SUBSTRATE - A method for bonding a porous tantalum structure to a substrate is provided. The method comprises providing a substrate comprising cobalt or a cobalt-chromium alloy; an interlayer consisting essentially of at least one of hafnium, manganese, niobium, palladium, zirconium, titanium, or alloys or combinations thereof; and a porous tantalum structure. Heat and pressure are applied to the substrate, the interlayer, and the porous tantalum structure to achieve solid-state diffusion between the substrate and the interlayer and between the interlayer and the porous tantalum structure. | 04-16-2009 |
20090098311 | METHOD FOR FORMING THIN FILM - When a thin film is formed on a substrate by means of a plasma under a pressure atmosphere close to the atmospheric pressure, it is possible to control particles to be formed by a reaction of a reaction gas and to form a uniform thin film constantly, even when the space between an electrode and the substrate is set to be wider than a conventional method. | 04-16-2009 |
20090104375 | NEUTRAL LIGAND CONTAINING PRECURSORS AND METHODS FOR DEPOSITION OF A METAL CONTAINING FILM - Methods and compositions for depositing metal films are described herein. In general, the disclosed methods utilize precursor compounds comprising gold, silver or copper. More specifically, the disclosed precursor compounds utilize neutral ligands derived from ethylene or acetylene. | 04-23-2009 |
20090130338 | Group 2 Metal Precursors for Depositing Multi-Component Metal Oxide Films - Novel Sr and Ba complexes containing both beta-diketonates and N-methyl-pyrrolidone were synthesized and characterized. TGA experiments indicated these complexes are volatile, they can be employed as precursors for ALD strontium titanate (STO) or barium strontium titanate films (BST) films in semiconductor fabrication. | 05-21-2009 |
20090136685 | Metal Complexes of Tridentate Beta-Ketoiminates - Metal-containing complexes of a tridentate beta-ketoiminate, one embodiment of which is represented by the structure: | 05-28-2009 |
20090142512 | APPARATUS AND METHOD FOR DEPOSITING ELECTRICALLY CONDUCTIVE PASTING MATERIAL - A method and apparatus are described for reducing particle contamination in a plasma processing chamber. In one embodiment, a pasting disk is provided which includes a disk-shaped base of high-resistivity material that has an electrically conductive pasting material layer applied to a top surface of the base so that the pasting material layer partially covers the top surface of the base. The pasting disk is sputter etched to deposit conductive pasting material over a wide area on the interior surfaces of a plasma processing chamber while minimizing deposition on dielectric components that are used to optimize the sputter etch process during substrate processing. | 06-04-2009 |
20090142513 | FILM FORMATION METHOD, CLEANING METHOD AND FILM FORMATION APPARATUS - A treatment gas is supplied to form a Ti-based film on a predetermined number of wafers W while setting a temperature of a susceptor | 06-04-2009 |
20090148625 | METHOD FOR FORMING THIN FILM - A method for forming a thin film by using an atomic layer deposition (ALD) method and a method for fabricating a capacitor using the same includes: supplying a source gas, a reaction gas, and a purge gas, then discontinuing the supply of the reaction gas and the source gas, followed by supplying and then discontinuing the supply of the reaction gas, wherein supplying the source gas, the reaction gas, and the purge gas, then discontinuing the supply of the reaction gas and the source gas, followed by supplying and then discontinuing the supply of the reaction gas constitutes a unit cycle, and repeating the unit cycle until a thin film having a desired thickness is deposited. | 06-11-2009 |
20090155490 | Method and device for the internal plasma treatment of hollow bodies - The invention relates to a method for the plasma treatment of workpieces, particularly workpieces in the form of hollow bodies, in which a treatment zone in a reactor chamber is at least partially evacuated, a process gas is introduced into the treatment zone, particularly into the cavity of the workpiece, and a plasma is ignited by means of injected electromagnetic energy in the process gas introduced into the treatment zone, wherein the process gas flows through the treatment zone between opposite ends of the zone during the plasma treatment. | 06-18-2009 |
20090155491 | Film-forming method for forming metal oxide on substrate surface - A film-forming method includes the steps of introducing oxygen radicals and an organic raw material gas containing a metal element into a vacuum container, and reacting the organic raw material gas with the oxygen radicals, thereby forming a metal oxide film on a surface of a substrate disposed in the vacuum container. | 06-18-2009 |
20090176035 | METHOD FOR PRODUCING DIAMOND-LIKE CARBON COATINGS USING DIAMONDOID PRECURSORS ON INTERNAL SURFACES - The invention relates to a method for forming high sp | 07-09-2009 |
20090202743 | MULTILAYER COATING PACKAGE ON FLEXIBLE SUBSTRATES FOR ELECTRO-OPTICAL DEVICES - An electro-optical device having at least one base and a multilayer coating surface disposed on at least one surface of the base. The at least one base may comprise either an optically or electronically active portion or a flexible polymeric material. The multilayer coating set comprises at least one organic layer and at least one inorganic layer. The base and multilayer coating set are transparent. The multilayer coating set provides a barrier to moisture and oxygen and provides chemical resistance. The multilayer coating set is also mechanically flexible and thermally stable up to a glass transition temperature of the base. | 08-13-2009 |
20090258163 | Method for manufacturing nickel silicide nano-wires - A method for making nickel silicide nano-wire, the method includes the following steps. Firstly, providing a silicon substrate and a growing device, and the growing device including a reacting room. Secondly, forming a silicon dioxide layer on a surface of the silicon substrate. Thirdly, forming a titanium layer on the silicon dioxide layer. Fourthly, placing the silicon substrate into the reacting room, and heating the reacting room to a temperature of 500˜1000° C. Finally, forming a plurality of nickel cluster onto the surface of the silicon substrate. | 10-15-2009 |
20090258164 | CARBON STRUCTURE MANUFACTURING DEVICE AND MANUFACTURING METHOD - This invention relates to a carbon structure manufacturing device, which forms carbon structures on a substrate. This manufacturing device comprises a first chamber, which forms a first space accommodating the substrate; a raw material gas supply device, which supplies raw material gas for formation of the carbon structures to the first space; a second chamber, which forms a second space separate from the first space; a gas supply device, which supplies gas for generation of plasma to the second space; a plasma generation device, which generates plasma in the second space; an aperture, connecting the first space and the second space; and, a plasma introduction device, which introduces plasma generated in the second space into the first space via the aperture; the raw material gas is used to form the carbon structures on the substrate. By means of this manufacturing device, when forming carbon structures on the substrate, the occurrence of contamination, foreign matter, and/or the like on electrodes and/or the like can be suppressed, and carbon structures can be formed satisfactorily over a broad area. | 10-15-2009 |
20090311444 | PLASMA MEDIATED PROCESSING OF NON-CONDUCTIVE SUBSTRATES - Methods for improving coating or etching uniformity of non-conductive substrates in plasma-mediated processes generally include applying an electrically conductive coating to the non-conductive substrate prior to plasma processing. The electrically conductive coating is disposed in electrical communication with a metallic electrode of a plasma reactor. By disposing a conductive layer on the non-conductive substrate, a uniform electric potential is created during plasma processing can be built up on the non-conductive, which is equivalent to that of the metallic electrode upon which it is disposed during plasma processing. | 12-17-2009 |
20100015358 | APPARATUS AND METHOD FOR SURFACE FINISHING OF METALS AND METALLOIDS, METAL OXIDES AND METALLOID OXIDES, AND METAL NITRIDES AND METALLOID NITRIDES - The present invention relates to an apparatus for treatment of the surface of metals and metalloids, metal oxides and metalloid oxides, and metal nitrides and metalloid nitrides using the action of electric plasma. The invention disclosed herein includes at least one electrode system ( | 01-21-2010 |
20100021656 | LOW LEAKAGE METAL-CONTAINING CAP PROCESS USING OXIDATION - An interconnect structure which includes a metal-containing cap located atop each conductive feature that is present within a dielectric material is provided in which a surface region of the metal-containing cap is oxidized prior to the subsequent deposition of any other dielectric material thereon. Moreover, metal particles that are located on the surface of the dielectric material between the conductive features are also oxidized at the same time as the surface region of the metal-containing cap. This provides a structure having a reduced leakage current. In accordance with the present invention, the oxidation step is performed after electroless plating of the metal-containing cap and prior to the deposition of a dielectric capping layer or an overlying interlayer or intralevel dielectric material. | 01-28-2010 |
20100028562 | PLASMA GENERATING APPARATUS, DEPOSITION APPARATUS, DEPOSITION METHOD, AND METHOD OF MANUFACTURING DISPLAY DEVICE - A deposition apparatus includes a plasma gun including a hollow cathode which generates a plasma beam into a vacuum chamber including an exhaust system and one or more intermediate electrodes to provide a potential gradient for the plasma beam, a focusing coil which is provided to surround the outer surface of a tube portion of the vacuum chamber located coaxially with the exit portion for outputting a plasma beam from the plasma gun and draws the plasma beam into the vacuum chamber through the tube portion, and a reflected electron feedback electrode which is placed inside the tube portion coaxially with the exit portion of the plasma gun and has a positive polarity. | 02-04-2010 |
20100040802 | METHOD AND APPARATUS FOR PRODUCTION OF METAL FILM OR THE LIKE - In a metal film production apparatus, a copper plate member is etched with a Cl | 02-18-2010 |
20100055348 | DEPOSITION APPARATUS AND DEPOSITION METHOD - A deposition apparatus for forming a thin film by depositing material particles separated from a deposition material on a deposition object by irradiation with a plasma supplied from a plasma generator into a chamber including a hearth accommodating the deposition material, and a capturing mechanism installed near the hearth and outside the range of a moving region of the material particles moving toward the deposition object. The moving region is determined by a width in an incident direction in which the plasma is incident on the deposition material, and the width of the deposition object | 03-04-2010 |
20100075067 | Preparation of Metal Oxide Thin Film Via Cyclic CVD or ALD - A cyclic deposition process to make a metal oxide film on a substrate, which comprises the steps: introducing a metal ketoiminate into a deposition chamber and depositing the metal ketoiminate on a heated substrate; purging the deposition chamber to remove unreacted metal ketominate and any byproduct; introducing an oxygen-containing source to the heated substrate; purging the deposition chamber to remove any unreacted chemical and byproduct; and, repeating the cyclic deposition process until a desired thickness of film is established. | 03-25-2010 |
20100080934 | METHODS OF MAKING MULTILAYERED, HYDROGEN-CONTAINING INTERMETALLIC STRUCTURES - Methods of making multilayered, hydrogen-containing intermetallic structures including at least two adjacent metal layers are disclosed. At least one of the metal layers contains hydrogen, which can be introduced into the metal by plasma hydrogenation. The intermetallic structures can have high hydrogen contents and micrometer-sized and nanometer-sized dimensions. | 04-01-2010 |
20100092696 | METHOD FOR FORMING METAL FILM BY ALD USING BETA-DIKETONE METAL COMPLEX - A method of forming a single-metal film on a substrate by plasma ALD includes: contacting a surface of a substrate with a β-diketone metal complex in a gas phase; exposing molecule-attached surface to a nitrogen-hydrogen mixed plasma; and repeating the above steps, thereby accumulating atomic layers to form a single-metal film on the substrate. | 04-15-2010 |
20100098883 | METHOD AND APPARATUS FOR PRODUCING ONE-DIMENSIONAL NANOSTRUCTURE - A method and apparatus for producing one-dimensional nanostructures are disclosed. The production of the nanostructures is carried out by disposing a vanadium containing target facing a substrate; irradiating the target with laser light; and depositing target sublimation materials to the substrate under pressure conditions so that a plasma, which is generated by the laser light irradiation including target sublimation materials and gas atmosphere, does not substantially reach the substrate. | 04-22-2010 |
20100143608 | METHOD AND DEVICE FOR PREPARING A MULTILAYER COATING ON A SUBSTRATE - Method for preparing a substrate comprising a solid support and a plurality of layers on the support; at least one layer consisting of a uniform, homogeneous, and continuous film of particles of one or more metal oxide(s), or of uniformly, homogeneously, dispersed particles of one or more metal oxide(s), on the support or on an underlying layer; at least one layer consisting of a continuous or discontinuous film of one or more metal(s) or of one or more metal alloy(s), or of dispersed nanoparticles of one or more metal(s) or of one or more metal alloy(s), on the support or on an underlying layer; the method comprising the following steps: a)—impregnating the heated solid support or an already deposited underlying layer with a solution of precursors of the metal oxide or oxides in a supercritical fluid, and depositing a uniform, homogeneous, and continuous film of particles of one or more metal oxide(s), or of uniformly, homogeneously, dispersed particles of one or more metal oxide(s), on the support or on the underlying layer; b)—depositing a continuous or discontinuous film of one or more metal(s) or of one or more metal alloy(s), or dispersed nanoparticles of one or more metal(s) or of one or more metal alloy(s), on the support or on an underlying layer, by chemical vapour deposition CVD, from one or more precursors; the steps a) and b) being carried out in the same chamber, same reactor. | 06-10-2010 |
20100151150 | PLASMA PROCESSING APPARATUS AND MANUFACTURING METHOD OF DEPOSITION-INHIBITORY MEMBER - A plasma processing apparatus of the present invention performs on a substrate to be processed, plasma processing with a noble metal material and a ferroelectric material and is provided with a constituent member that is exposed to plasma while being heated. The constituent member is formed with an aluminum alloy of at least 99% aluminum purity. | 06-17-2010 |
20100166981 | SURFACE CHARGE ENHANCED ATOMIC LAYER DEPOSITION OF PURE METALLIC FILMS - A method including applying an electric charge to a substrate in a chamber; introducing an organometallic substituent into the chamber, the organometallic substituent including a metal ligand and an organic ligand; and depositing a metal film by reducing the metal ligand of the organometallic substituent. A method including applying a removable electric charge to a substrate; in the presence of the applied electric charge, introducing an organometallic substituent into the chamber, the organometallic substituent including a metal ligand and an organic ligand; and depositing a metal film by reducing the metal ligand of the organometallic substituent. A method including introducing an organometallic substituent into the chamber, the organometallic substituent including a metal ligand and an organic ligand; and depositing a metal film by reducing the metal ligand of the organometallic substituent with an externally applied electric charge. | 07-01-2010 |
20100166982 | METAL LINE OF SEMICONDUCTOR DEVICE HAVING A DIFFUSION BARRIER AND METHOD FOR FORMING THE SAME - A metal line of a semiconductor device includes an insulation layer formed on a semiconductor substrate. The insulation layer has a metal line forming region. A diffusion barrier is formed on a surface of the metal line forming region of the insulation layer. The diffusion barrier includes a stack structure including an Mo | 07-01-2010 |
20100173098 | METHOD FOR PRODUCING ELECTRODE FOR NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY - A method for producing an electrode for a non-aqueous electrolyte secondary battery, the method comprising the steps of (a) generating a thermal plasma, (b) supplying a raw material of active material into the thermal plasma, and (c) depositing particles produced in the thermal plasma on a surface of a current collector to give an active material layer. | 07-08-2010 |
20100209623 | APPARATUS FOR GROWING LARGE AREA VANADIUM DIOXIDE THIN FILM AND METHOD OF GROWING LARGE AREA OXIDE THIN FILM IN THE APPARATUS - Provided is a technology for in-situ growing a large area VO | 08-19-2010 |
20100255217 | METHOD FOR FORMING A CAPACITOR DIELECTRIC AND METHOD FOR MANUFACTURING CAPACITOR USING THE CAPACITOR DIELECTRIC - A method for forming a capacitor dielectric includes depositing a tantalum oxide layer over a substrate, performing a post-treatment on the tantalum oxide layer to provide the tantalum oxide layer with a tetragonal phase, and depositing a zirconium oxide layer over the tantalum oxide layer such that the zirconium oxide layer has a tetragonal phase. | 10-07-2010 |
20100279029 | Method for coating nanometer particles - There is disclosed a method for coating nanometer metal particles. The step includes three steps. At the first step, a substrate is provided. At the second step, the substrate is coated with a metal layer. At the third step, the metal layer is annealed so that the metal layer is transformed into nanometer metal particles. | 11-04-2010 |
20100291320 | METHOD FOR MANUFACTURING A TREATED SURFACE AND VACUUM PLASMA SOURCES - When treating workpiece or substrate surfaces with the help of a vacuum plasma discharge between an anode and an cathode and whereby due to such treatment a solid is formed and deposited on the anode surface, which solid has a higher specific DC impedance than the specific DC impedance of the anode material, at least parts of the anode surface are shielded from such deposition by establishing thereat a shielding plasma. | 11-18-2010 |
20110045205 | Device and Process for Very High-Frequency Plasma-Assisted CVD under Atmospheric Pressure, and Applications Thereof - The invention relates to a method for CVD on a substrate under atmospheric pressure, characterized in that it is assisted by a very-high-frequency plasma generated by a field applicator with an elongated conductor of the micro-ribbon or hollow conducting line type. The invention also relates to the use thereof for applying an electrically conductive inorganic layer on elements of vehicle bodywork, particularly the bumpers. | 02-24-2011 |
20110045206 | IN-SITU DEPOSITION OF BATTERY ACTIVE LITHIUM MATERIALS BY PLASMA SPRAYING - A method and apparatus for forming an electrochemical layer of a thin film battery is provided. A precursor mixture comprising precursor particles dispersed in a carrying medium is activated in an activation chamber by application of an electric field to ionize at least a portion of the precursor mixture. The activated precursor mixture is then mixed with a combustible gas mixture to add thermal energy to the precursor particles, converting them to nanocrystals, which deposit on a substrate. A second precursor may be blended with the nanocrystals as they deposit on the surface to enhance adhesion and conductivity. | 02-24-2011 |
20110086184 | METHOD OF DEPOSITING METALLIC FILM AND MEMORY MEDIUM - For depositing a metallic film, the following steps are repeatedly conducted: a step in which a precoat film is formed on the inside of a chamber; a step in which two or more substrates to be treated are subjected to the deposition of a metallic film thereon by introducing each substrate into the precoated chamber, placing the substrate on the stage, feeding a treating gas while heating the substrate to generate a plasma of the treating gas, and depositing a metallic film on the substrate by plasma CVD; and a step in which after the film deposition on the substrates has been completed, a cleaning gas is introduced into the chamber to conduct dry cleaning. In the step in which two or more substrates to be treated are subjected to the deposition of a metallic film thereon, a conductive film is formed on the stage one or more times in the course of the step. | 04-14-2011 |
20110091661 | APPARATUS FOR PRODUCING MULTILAYER SHEET AND METHOD OF PRODUCING THE MULTILAYER SHEET - An apparatus for producing a multilayer sheet including a resin film, a vapor-deposited metal film and a vapor-deposited polymer film at a low cost and with excellent productivity is provided which comprises: a vacuum chamber which is made to be in a vacuum state by exhaust means; a feeding roller; a take up roller; a first to third rollers, first metal vapor deposition means for forming a first vapor-deposited metal film on one surface of a resin film at a periphery of the first roller; vapor deposition polymerization means for forming a vapor-deposited polymer film on the first vapor-deposited metal film by vapor deposition polymerization at a periphery of the second roller; and second metal vapor deposition means for forming the second vapor-deposited metal film on the other surface of the resin film at a periphery of the third roller. | 04-21-2011 |
20110143053 | METHOD OF FORMING ZINC OXIDE FILM (ZNO) OR MAGNESIUM ZINC OXIDE FILM (ZNMGO) AND APPARATUS FOR FORMING ZINC OXIDE FILM OR MAGNESIUM ZINC OXIDE FILM - A method of forming a zinc oxide film or a magnesium zinc oxide film which has a high transmittance. The method of forming a zinc oxide film or a magnesium zinc oxide film includes (A) converting a solution containing zinc, or zinc and magnesium into mist, (B) heating a substrate, and (C) supplying the solution converted into mist, and ozone to a first main surface of the substrate under heating. | 06-16-2011 |
20110151140 | Methods Of Forming Nickel Aluminde Coatings - A method for forming a nickel aluminide based coating on a metallic substrate includes providing a first source for providing a significant portion of the aluminum content for a coating precursor and a separate nickel alloy source for providing substantially all the nickel and additional alloying elements for the coating precursor. Cathodic arc (ion plasma) deposition techniques may be utilized to provide the coating precursor on a metallic substrate. The coating precursor may be provided in discrete layers, or from a co-deposition process. Subsequent processing or heat treatment forms the nickel aluminide based coating from the coating precursor. | 06-23-2011 |
20110165345 | PROCESS TO MAKE STRUCTURED PARTICLES - A process including providing a reactant, the reactant coming into contact with a first material and chemically reacting therewith to form a first compound and produce structured particles is provided. In some instances, second material particles are at least partially coated with the first compound. The first material can contain a transition metal and the reactant can be provided to an afterglow region of a plasma and/or be provided downstream from the afterglow region. The reactant can contain an element such as oxygen, nitrogen, sulfur, phosphorus, fluorine, carbon, boride, chloride, and the like. In addition, the reactant can be a gas and the first compound can be an oxide, nitride, sulfide, phosphide, fluoride, carbide, boride, chloride, and/or combinations thereof. | 07-07-2011 |
20110189407 | PROCESS FOR THE INTERNAL COATING OF HOLLOW BODIES USING A PLASMA BEAM AT ATMOSPHERIC PRESSURE - A coating process using a plasma beam is provided, wherein the coating contains nanozeolites loaded with dye. | 08-04-2011 |
20110206864 | ORGANOMETALLIC COMPOUNDS, PROCESSES FOR THE PREPARATION THEREOF AND METHODS OF USE THEREOF - This invention relates to organometallic precursor compounds represented by the formula (Cp(R′) | 08-25-2011 |
20120003397 | METHOD FOR DEPOSITING NANOPARTICLES ON A SUPPORT - A method for depositing nanoparticles on a support includes taking a colloidal solution of nanoparticles. The method also includes nebulizing the colloidal solution of nanoparticles on a surface of the support in an atmospheric plasma. | 01-05-2012 |
20120164353 | PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION APPARATUS - PECVD apparatus for depositing material onto a moving substrate is provided comprising a process chamber, a precursor gas inlet to the process chamber, a pumped outlet, and a plasma source disposed within the process chamber. The plasma source produces one or more negative glow regions and one or more positive columns. At least one positive column is disposed toward the substrate. The plasma source and precursor gas inlet are disposed relative to each other and the substrate such that the precursor gas is injected into the positive column adjacent the substrate. Apparatus is provided to channel the precursor gas into the positive column away from the negative glow region. | 06-28-2012 |
20120196052 | METHOD OF FORMING COPPER WIRING AND METHOD AND SYSTEM FOR FORMING COPPER FILM - A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding Cu in the trench or hole by forming a Cu film on the Ru film using PVD while annealing the substrate such that migration of copper into the trench or hole occurs. | 08-02-2012 |
20120213949 | METHOD FOR PRODUCING INDIUM TIN OXIDE LAYER WITH CONTROLLED SURFACE RESISTANCE - The invention relates to a method for producing a transparent indium tin oxide conductive layer on a substrate. The method involves using a target having a low indium-to-tin ratio in a low temperature manufacturing process (less than 200° C.), and introducing a plasma gas and a reaction gas into the reaction chamber to allow sputtering of an indium tin oxide layer on the substrate under a low oxygen environment, followed by subjecting the sputtered substrate to a heat treatment at 150˜200° C. for 60˜90 minutes. The indium tin oxide layer thus produced will crystallize completely and have the advantageous properties of low surface resistance and high uniformity. | 08-23-2012 |
20120225218 | APPARATUS AND METHOD FOR DIELECTRIC DEPOSITION - The disclosed invention includes apparatus and methods that may be used for plasma-based deposition of thin layers of material on separate or continuous web substrates at very low temperatures with very low defect density. It achieves superior control of gas phase chemistry by controlling the sequence of introduction of gaseous components. It also has substantially independent control over the rate of chemical processes in the gas and of the amount of power and energy of ion bombardment. Such control enables high quality single and multi-layer films to be deposited cost effectively and uniformly over larger areas under very low temperature conditions. | 09-06-2012 |
20120231182 | Method and Apparatus for Treating Containers - An apparatus for treating the interior of containers includes a chamber for holding a container and provides precursor materials via an annulus formed by coaxially arranged electrodes at which plasma is created upon application of voltage and the container is treated. | 09-13-2012 |
20120269988 | METHOD OF MANUFACTURE OF MULTILAYER FILM - Provided is a process for producing a multilayer film which, even when bent, is less apt to decrease in barrier property or electrical conductivity. The process comprises forming a barrier film and a transparent conductive film on a resin film to produce a multilayer film. The barrier film is formed by a plasma enhanced CVD method which uses electric discharge between rolls. The transparent conductive film is preferably formed by physical vapor deposition. The resin film preferably is a polyester resin film or a polyolefin resin film. | 10-25-2012 |
20120276306 | Atomic Layer Deposition For Controlling Vertical Film Growth - A method for forming a film by atomic layer deposition wherein vertical growth of a film is controlled, includes: (i) adsorbing a metal-containing precursor for film formation on a concave or convex surface pattern of a substrate; (ii) oxidizing the adsorbed precursor to form a metal oxide sub-layer; (iii) adsorbing a metal-free inhibitor on the metal oxide sub-layer more on a top/bottom portion than on side walls of the concave or convex surface pattern; and (iv) repeating steps (i) to (iii) to form a film constituted by multiple metal oxide sub-layers while controlling vertical growth of the film by step (iii). The adsorption of the inhibitor is antagonistic to next adsorption of the precursor on the metal oxide sub-layer | 11-01-2012 |
20120282417 | METHOD FOR PREPARING A METALLIZED POLYMER SUBSTRATE - A method for coating a surface of a substrate in (co)polymer with a metal material is provided. The method may comprise the successive steps of (a) subjecting the surface to an oxidizing treatment by a chemical reaction of the Fenton type in the presence of at least one precursor of the metal material and (b) transforming the precursor into the metal material. | 11-08-2012 |
20120308740 | Beam-Induced Deposition of Low-Resistivity Material - An improved method of beam deposition to deposit a low-resistivity metal. Preferred embodiments of the present invention use a novel focused ion beam induced deposition precursor to deposit low-resistivity metallic material such as tin. Applicants have discovered that by using a methylated or ethylated metal such as hexamethylditin as a precursor, material can be deposited having a resistivity as low as 40 μΩ·cm. | 12-06-2012 |
20130011580 | CYCLOPENTADIENYL TRANSITION METAL PRECURSORS FOR DEPOSITION OF TRANSITION METAL-CONTAINING FILMS - Methods and compositions for depositing a film on one or more substrates include providing a reactor with at least one substrate disposed in the reactor. At least one metal precursor are provided and at least partially deposited onto the substrate to form a metal-containing film. | 01-10-2013 |
20130022761 | Organic Silver Complexes, Their Preparation Methods and Their Methods for Forming Thin Layers - The present invention relates to a silver complex obtained by reacting at least one silver compound represented by the formula 2 below with at least one ammonium carbamate compound or ammonium carbonate compound represented by the formula 3, 4 or 5 below: | 01-24-2013 |
20130078391 | Complexes Of Imidazole Ligands - Metal imidazolate complexes are described where imidazoles ligands functionalized with bulky groups and their anionic counterpart, i.e., imidazolates are described. Compounds comprising one or more such polyalkylated imidazolate anions coordinated to a metal or more than one metal, selected from the group consisting of alkali metals, transition metals, lanthanide metals, actinide metals, main group metals, including the chalcogenides, are contemplated. Alternatively, multiple different imidazole anions, in addition to other different anions, can be coordinated to metals to make new complexes. The synthesis of novel compounds and their use to form thin metal containing films is also contemplated. | 03-28-2013 |
20130084410 | METHOD FOR DIFFUSING METAL PARTICLES WITHIN A COMPOSITE LAYER - The invention relates to a method for diffusing metal particles included in a composite layer previously deposited on a substrate, said composite layer further including at least one dielectric matrix. | 04-04-2013 |
20130089678 | PLASMA-ENHANCED DEPOSITION OF NICKEL-CONTAINING FILMS FOR VARIOUS APPLICATIONS USING AMIDINATE NICKEL PRECURSORS - The disclosure relates to a process for depositing a Nickel or Cobalt containing film comprising the step of providing a metal guanidinate and/or metal amidinate precursor, suitable for plasma deposition at temperature equal or lower than 500 degrees C., to a plasma deposition process comprising a deposition temperature equal or lower than 500 degrees C. | 04-11-2013 |
20130089679 | PLASMA-ENHANCED DEPOSITION OF MANGANESE-CONTAINING FILMS FOR VARIOUS APPLICATIONS USING AMIDINATE MANGANESE PRECURSORS - The disclosure relates to a process for depositing a Manganese-containing film comprising the step of providing a metal guanidinate and/or metal amidinate precursor, suitable for plasma deposition at temperature equal or lower than 500 degrees C., to a plasma deposition process comprising a deposition temperature equal or lower than 500 degrees C. | 04-11-2013 |
20130089680 | PLASMA-ENHANCED DEPOSITION OF RUTHENIUM-CONTAINING FILMS FOR VARIOUS APPLICATIONS USING AMIDINATE RUTHENIUM PRECURSORS - The present invention relates to a process for the use of Ruthenium amidinate metal precursors for the deposition of Ruthenium-containing films via Plasma Enhanced Atomic Layer Deposition (PEALD) or Plasma Enhanced Chemical Vapor Deposition (PECVD). | 04-11-2013 |
20130089681 | PLASMA-ENHANCED DEPOSITION OF TITANIUM-CONTAINING FILMS FOR VARIOUS APPLICATIONS USING AMIDINATE TITANIUM PRECURSORS - The present invention relates to a process for the use of Titanium amidinate metal precursors for the deposition of Titanium-containing films via Plasma Enhanced Atomic Layer Deposition (PEALD) or Plasma Enhanced Chemical Vapor Deposition (PECVD). | 04-11-2013 |
20130108805 | METHOD OF PREPARATION OF MULTIFUNCTIONAL TECHNICAL TEXTILE BY PLASMA-TREATMENT | 05-02-2013 |
20130202815 | Method for Applying Aluminum Alloy Coatings for Corrosion Protection of Steel - Depositing pure aluminum and aluminum alloy coatings onto substrates using directed vapor deposition (DVD) method is presented herein. The aluminum alloys have decreased environmental impact both due to their composition and due to the use of DVD process with no hazardous precursors or waste. Corrosion resistance of DVD deposited aluminum and aluminum alloys is effective for protection of steel substrates. The invention includes the use of the DVD technique to apply aluminum and/or aluminum alloy coatings effective for corrosion protection; the use of plasma-activated DVD to enhance the density of aluminum and aluminum alloy coatings deposited at low substrate temperatures; the use of multi-source evaporation to control composition of aluminum alloys during DVD deposition; the application of aluminum and/or aluminum alloy coatings onto NLOS substrates can be used for corrosion protection. | 08-08-2013 |
20130251918 | STRONTIUM AND BARIUM PRECURSORS FOR USE IN CHEMICAL VAPOR DEPOSITION, ATOMIC LAYER DEPOSITION AND RAPID VAPOR DEPOSITION - Cyclopentadienyl and indenyl barium/strontium metal precursors and Lewis base adducts thereof are described. Such precursors have utility for forming Ba- and/or Sr-containing films on substrates, in the manufacture of microelectronic devices or structures. | 09-26-2013 |
20130295298 | TITANIUM-ALUMINUM ALLOY DEPOSITION WITH TITANIUM-TETRAHYDROALUMINATE BIMETALLIC MOLECULES - Disclosed are titanium-tetrahydroaluminates precursors, their method of manufacture, and their use in the deposition of titanium-aluminum-containing films. The disclosed precursors have the formulae Ti(AlH | 11-07-2013 |
20130309417 | METHODS FOR FORMING MULTI-COMPONENT THIN FILMS - The present application relates generally to atomic layer deposition of multi-component, preferably multi-component oxide, thin films. Provide herein is a method for depositing a multi-component oxide film by, for example, an ALD or PEALD process, wherein the process comprises at least two individual metal oxide deposition cycles. The method provided herein has particular advantages in producing multi-component oxide films having superior uniformity. A method is presented, for example, including depositing multi-component oxide films comprising components A-B-O by ALD comprising mixing two individual metal oxides deposition cycles A+O and B+O, wherein the subcycle order is selected in such way that as few as possible consecutive deposition subcycles for A+O or B+O are performed. | 11-21-2013 |
20130316096 | Device and Method for Vacuum Coating - The invention relates to a device for vacuum coating substrates in a vacuum chamber, comprising an elongated evaporator array having a plurality of evaporator elements arranged along a longitudinal axis and a first substrate carrier unit which is associated with the evaporator array and has a first pylon that can be rotated about a first axis and contains retaining means for substrates, wherein an angular offset of less than 10° is present between the longitudinal axis and the first rotational axis. The device is characterised in that at least one second substrate carrier unit is provided, which is associated with the evaporator array and has a second pylon that can be rotated about a second axis and contains retaining means for substrates, wherein an angular offset of less than 10° is present between the longitudinal axis and the second rotational axis. At least one second substrate carrier unit ( | 11-28-2013 |
20140017414 | Method for Forming Aluminum Oxide Film Using Al Compound Containing Alkyl Group and Alkoxy or Alkylamine Group - A method for forming a conformal film of aluminum oxide on a substrate having a patterned underlying layer by PEALD includes: adsorbing an Al precursor containing an Al—C bond and an Al—O—C or Al—N—C bond; providing an oxidizing gas and an inert gas; applying RF power to the reactant gas and the reaction-assisting gas to react the adsorbed precursor with the reactant gas on the surface, thereby forming a conformal film of aluminum oxide on the patterned underlying layer of the substrate, wherein the substrate is kept at a temperature of about 200° C. or lower. | 01-16-2014 |
20140030446 | METHOD OF APPLICATION FOR LAYERED THERMAL BARRIER COATING WITH BLENDED TRANSITION - A method includes generating a plasma plume with a plasma gun, delivering a plurality of coating materials to the plasma plume with a powder feeder assembly to vaporize the coating materials. The delivery includes delivering a first (bond coat) material from a first powder feeder to the plasma gun, ceasing delivery of the first material, increasing a rate of delivery of a second (rare earth stabilized zirconia) material from a second powder feeder to the plasma plume, increasing a rate of delivery of a third material (a rare earth stabilized zirconia material different from the second material) from a third powder feeder to the plasma plume, decreasing a rate of delivery of the second material, and decreasing a rate of delivery of the third material, and depositing the plurality of coating materials on a work piece to produce a layered coating with blended transitions between coating layers. | 01-30-2014 |
20140099451 | METHOD FOR DEPOSITING LAYERS ON A GLASS SUBSTRATE BY MEANS OF LOW-PRESSURE PECVD - The invention relates to a method for producing metal or semiconductor oxide, nitride or oxynitride films on a substrate, by means of the PECVD method, including the steps that involve: (i) having a low-pressure PECVD device including at least one plasma source that includes at least one electrode connected to an AC, DC, or drawn DC generator for depositing said films on the substrate; and (ii) applying electrical power to the plasma source and applying, on the substrate, an oxide film gas precursor made of metal or semiconductor nitrides or oxynitrides and a reactive gas made of oxygen, oxygen derivatives, or nitrogen derivatives. The invention also relates to metal or semiconductor oxide, nitride, or oxynitride films obtained by the method. | 04-10-2014 |
20140134351 | METHOD TO DEPOSIT CVD RUTHENIUM - Methods for depositing ruthenium by a PECVD process are described herein. Methods for depositing ruthenium can include positioning a substrate in a processing chamber, the substrate having a barrier layer formed thereon, heating and maintaining the substrate at a first temperature, flowing a first deposition gas into a processing chamber, the first deposition gas comprising a ruthenium containing precursor, generating a plasma from the first deposition gas to deposit a first ruthenium layer over the barrier layer, flowing a second deposition gas into the processing chamber to deposit a second ruthenium layer over the first ruthenium layer, the second deposition gas comprising a ruthenium containing precursor, depositing a copper seed layer over the second ruthenium layer and annealing the substrate at a second temperature. | 05-15-2014 |
20140161992 | METHOD FOR FORMING COPPER WIRING - There is provided a Cu wiring forming method for forming a Cu wiring by filling Cu in a recess, which is formed in a predetermined pattern in a Si-containing film of a substrate. The Cu wiring forming method includes forming a Mn film, which becomes a self-aligned barrier film by reaction with an underlying base, at least on a surface of the recess by chemical vapor deposition, forming a Cu film by a physical vapor deposition to fill the recess with the Cu film, and forming a Cu wiring in the recess by polishing the entire surface of the substrate by a chemical mechanical polishing. | 06-12-2014 |
20140170336 | FABRICATION OF ZEOLITE COMPOSITE FILM - A fabrication of a zeolite composite film includes mixing a composition of water, aluminum isopropoxide, TMAOH, and TEOS according to a set ratio, followed by stirring and heating to obtain a mixture; performing a centrifugation on the mixture to obtain an upper layer suspension; preparing a mesoporous particle suspension that includes a plurality of mesoporous particles, and each mesoporous particle includes a plurality of templating agents; vaporizing a mixture suspension formed from both the upper layer suspension and the mesoporous particle suspension to form a plurality of vaporized droplets; depositing the vaporized droplets on a heated substrate while removing the templating agents to form the zeolite composite film with a plurality of macroporous, mesoporous and microporous structures. | 06-19-2014 |
20140212601 | METHODS FOR PLASMA PROCESSING - Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider. | 07-31-2014 |
20140220262 | METHODS FOR PLASMA PROCESSING - Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider. | 08-07-2014 |
20140242298 | NICKEL BIS DIAZABUTADIENE PRECURSORS, THEIR SYNTHESIS, AND THEIR USE FOR NICKEL CONTAINING FILMS DEPOSITIONS - Disclosed are homoleptic diazabutadiene nickel precursors used for the vapor deposition of nickel-containing films. The precursors have the general formula Ni(R-DAD) | 08-28-2014 |
20140287163 | METHOD OF FORMING COPPER WIRING AND METHOD AND SYSTEM FOR FORMING COPPER FILM - A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding Cu in the trench or hole by forming a Cu film on the Ru film using PVD while annealing the substrate such that migration of copper into the trench or hole occurs. | 09-25-2014 |
20140302257 | METHOD - A method for applying a zinc oxide coating to a substrate, comprising the steps of: (i) applying a nitrogen-containing aromatic heterocycle functionalised coating to the substrate; (ii) contacting the nitrogen-containing aromatic heterocycle functionalised coating with an agent comprising palladium(II) and/or platinum(II), resulting in a coating comprising complexed palladium(II) and/or platinum(II); (iii) reducing the complexed palladium(II) and/or platinum(II) in the coating to palladium(0) and/or platinum(0); and (iv) contacting the coating comprising complexed palladium(0) and/or platinum(0) with a zinc salt in the presence of a reducing agent under aqueous conditions to form a zinc oxide coating on the substrate. | 10-09-2014 |
20140356551 | MOLDED BODIES HAVING HIGH SURFACE QUALITY - The invention relates to thermoplastic compositions comprising A) 30.0 to 100.0 parts by wt. of at least one aromatic polycarbonate, B) 0.0 to 50.0 parts by wt. of a rubber-modified graft polymer and/or vinyl copolymer, C) 0.00 to 50.00 parts by wt. of polyester, D) 5.0 to 50.0 parts by wt. of at least one inorganic filler having a particle shape selected from the group including spherical/cubic, tabular/discus-shaped and lamellar geometries, and E) 0.00 to 5.00 parts by wt. of further conventional additives. The invention further relates to thermoplastic shaped articles having a high surface quality, high dimensional stability and high heat distortion temperature, as well as thermoplastic moulding compositions and a process for the production of the shaped articles. The present invention moreover relates to the coated finished parts produced from the thermoplastic shaped parts. | 12-04-2014 |
20150017348 | ALD OF METAL-CONTAINING FILMS USING CYCLOPENTADIENYL COMPOUNDS - Atomic layer deposition (ALD) type processes for producing metal containing thin films comprise feeding into a reaction space vapor phase pulses of metal containing cyclopentadienyl precursors as a metal source material. In preferred embodiments the metal containing cyclopentadienyl reactant comprises a metal atom that is not directly bonded to an oxygen or halide atom. In other embodiments the metal atom is bonded to a cyclopentadienyl compound and separately bonded to at least one ligand via a nitrogen atom. In still other embodiments the metal containing cyclopentadienyl compound comprises a nitrogen-bridged ligand. | 01-15-2015 |
20150050431 | RUTHENIUM COMPOUND HAVING SUPERIOR STEP COVERAGE AND THIN FILM DEPOSITED USING SAME - The present invention relates to a ruthenium compound including a specific ligand structure of 1-ethyl-1,4-cyclohexadiene, 1,3-butadiene or isoprene and having superior thermal stability, vaporizing property and step coverage, and a thin film deposited using same. | 02-19-2015 |
20150056385 | COPPER WIRING STRUCTURE FORMING METHOD - In a Cu wiring structure forming method, a barrier film serving as a Cu diffusion barrier is formed at least on a surface of a recess in a first insulating film formed on a substrate, and the recess is filled with an Al-containing Cu film. A Cu wiring is formed from the Al-containing Cu film, and a cap layer including a Ru film is formed on the Cu wiring. Further, an interface layer containing a Ru—Al alloy is formed at an interface between the Cu wiring and the cap layer by heat generated in forming the cap layer or by a heat treatment performed after forming the cap layer. A second insulating film is formed on the cap layer. | 02-26-2015 |
20150072085 | TITANIUM BIS DIAZADIENYL PRECURSOR FOR VAPOR DEPOSITION OF TITANIUM OXIDE FILMS - Disclosed are methods of using the Ti(iPrDAD) | 03-12-2015 |
20150086729 | METHOD FOR PRODUCING A SUBSTRATE WITH STACKED DEPOSITION LAYERS - A stacked substrate is produced using an apparatus including an injector head device. Production includes the steps of providing an injector head device comprising a gas bearing pressure arrangement and injecting bearing gas against opposite substrate surfaces, to balance the substrate without support in a conveying plane in the injector head device. The following steps are performed iteratively: contacting opposite substrate surfaces with a first precursor gas; and with a second precursor gas, first and second precursor gases supplied in first and second deposition spaces are arranged opposite and facing respective sides of the substrate; establishing relative motion between the deposition space and the substrate in the conveying plane; and providing at least one of a reactant gas, plasma, laser-generated radiation, and/or ultraviolet radiation, in any or both reactant spaces for reacting any of the first and second precursor gas after deposition on at least part of the substrate surface. | 03-26-2015 |
20150337440 | COATING METHOD FOR DECREASING DAMAGE OF BARRIER LAYER - A coating method which reduces damage of a barrier layer is provided. The barrier film has a gas barrier property improved by suppressing reduction of a water vapor transmittance rate through a non-contact coating method on a barrier layer when a protective coating is performed to protect a barrier layer of the barrier film. | 11-26-2015 |
20150368282 | COBALT-CONTAINING COMPOUNDS, THEIR SYNTHESIS, AND USE IN COBALT-CONTAINING FILM DEPOSITION - Cobalt-containing compounds, their synthesis, and their use for the deposition of cobalt containing films are disclosed. The disclosed cobalt-containing compounds have one of the following formulae: wherein each of R | 12-24-2015 |
20160032454 | BIS(ALKYLIMIDO)-BIS(ALKYLAMIDO)TUNGSTEN MOLECULES FOR DEPOSITION OF TUNGSTEN-CONTAINING FILMS - Bis(alkylimido)-bis(alkylamido)tungsten compounds, their synthesis, and their use for the deposition of tungsten-containing films are disclosed. | 02-04-2016 |
20160053369 | Open Air Plasma Deposition Method - An apparatus may comprise a plasma deposition unit, a movement system, and a mesh system. The plasma deposition unit may be configured to generate a plasma. The movement system may be configured to move a substrate under the plasma deposition unit. The mesh system may be located between the plasma deposition unit and the substrate in which a mesh may comprise a number of materials for deposition onto the substrate and in which the plasma passing through the mesh may cause a portion of the number of materials from the mesh to be deposited onto the substrate. | 02-25-2016 |
20160083842 | METHOD OF FORMING VERY REACTIVE METAL LAYERS BY A HIGH VACUUM PLASMA ENHANCED ATOMIC LAYER DEPOSITION SYSTEM - This invention provides a method and a system to deposit a thin layer of very reactive elemental metals by plasma enhanced atomic layer deposition (PEALD). The very reactive metals, selected from the highly electropositive elements include alkaline earth metals, group III metals, and some transition and rare earth metals. The thin metal layers are formed by sequentially pulsing one of above mentioned metal containing organometallic precursors and a hydrogen plasma as a reducing agent into a reaction chamber containing a substrate surface with pulsed or continuous flow of an inert purge gas between each pulsing step. A robust high vacuum reactor chamber equipped with an anti-corrosion turbo pump and a high vacuum load lock are required for reducing contaminant gases such as O | 03-24-2016 |
20160108524 | HIGH-SPEED DEPOSITION OF MIXED OXIDE BARRIER FILMS - The present disclosure relates to metal oxide barrier films and particularly to high-speed methods for depositing such barrier films. Methods are disclosed that are capable of producing barrier films with water vapor transmission rates (WVTR) below 0.1 g/(m | 04-21-2016 |
20160168699 | METHOD FOR DEPOSITING METAL-CONTAINING FILM USING PARTICLE-REDUCTION STEP | 06-16-2016 |
20160168708 | COMBINED HEAT TREAT AND THIN FILM COATING PROCESS | 06-16-2016 |