| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 427570000 | Utilizing plasma with other nonionizing energy sources | 31 |
| 20130034669 | METHODS OF MAKING CELL CARRIER - A method of making a carrier for growing cells, including providing a polymer film; embossing a patterned surface one or more sides of the polymer film with an embossing roller; generating a pattern of structured indentations on the polymer film; and discretizing the patterned polymer film into a plurality of portions. The embossing pattern generates relief features on the carrier surface. An alternative method of making a carrier is also provided, including extruding a polymer film; embossing a patterned surface on the polymer film with a roller; generating a pattern of structured indentations on the polymer film; imparting a surface treatment to the film; and discretizing the treated polymer film into a plurality of portions. | 02-07-2013 |
| 20100189923 | METHOD OF FORMING HARDMASK BY PLASMA CVD - A method of forming a transparent hardmask by plasma CVD includes: providing an underlying layer formed on a substrate in a reaction space; introducing an inert gas into the reaction space; introducing a hydrocarbon precursor vapor of an aromatic compound into the reaction space, wherein a flow ratio of the hydrocarbon precursor vapor to the inert gas is less than 0.1; and applying RF power to the reaction space, thereby depositing on the underlying layer a transparent hardmask having a film stress of −300 MPa to 300 MPa. | 07-29-2010 |
| 20120196051 | Deposition Apparatus and Methods - A deposition apparatus includes a deposition chamber and a deposition material source. An electron beam source is positioned to direct a first electron beam to vaporize a portion of the deposition material. A first electrode is provided for generating a primary plasma from the deposition material source. A second electrode is provided for generating a secondary plasma and further accelerating ions from the primary plasma. A bias electric potential is applied to the workpiece to draw ions from the secondary plasma to the workpiece. A control system may be coupled to the electron beam source, the bias voltage source, and power supplies for the first and second electrodes. | 08-02-2012 |
| 20080206483 | PLASMA PROCESS FOR INDUCTIVELY COUPLING POWER THROUGH A GAS DISTRIBUTION PLATE WHILE ADJUSTING PLASMA DISTRIBUTION - A method of processing a workpiece in the chamber of a plasma reactor having a ceiling overlying the workpiece by introducing a process gas into the chamber through a gas distribution plate in the ceiling. The gas is introduced by distributing gas flow from a first gas input to plural gas distribution orifices extending through a manifold of the gas distribution plate, and distributing gas flow from each of the plural gas distribution orifices to plural gas injection orifices in a showerhead of the gas distribution plate. The method further includes restricting gas flow in the gas distribution plate to paths having arcuate lengths about an axis of symmetry less than a complete circle. The method also includes capacitively and inductively coupling plasma source power into the chamber through the gas distribution. The method further includes adjusting the plasma ion density radial distribution in the process region by adjusting the ratio between the amounts of the capacitively coupled VHF power and the inductively coupled power. | 08-28-2008 |
| 20080286494 | ULTRALOW DIELECTRIC CONSTANT LAYER WITH CONTROLLED BIAXIAL STRESS - A method for forming a ultralow dielectric constant layer with controlled biaxial stress is described incorporating the steps of forming a layer containing Si, C, O and H by one of PECVD and spin-on coating and curing the film in an environment containing very low concentrations of oxygen and water each less than 10 ppm. A material is also described by using the method with a dielectric constant of not more than 2.8. The invention overcomes the problem of forming films with low biaxial stress less than 46 MPa. | 11-20-2008 |
| 20080292812 | Vacuum Treatment Installation and Vacuum Treatment Method - Vacuum treatment installation or vacuum treatment method for carrying out a plasma method, wherein the treatment is carried out in a vacuum chamber, in which are disposed a device for generating an electric low voltage arc discharge (NVBE) comprised of a cathode and an anode electrically interconnectable with the cathode via an arc generator, and a workpiece carrier electrically interconnectable with a bias generator for receiving and moving workpieces, as well as at least one feed for inert and/or reactive gas. At least a portion of the surface of the anode is therein fabricated of graphite and is operated at high temperature. | 11-27-2008 |
| 20110223357 | SURFACE TREATMENT METHOD - A surface treatment method, which is capable of continuously and efficiently performing high quality surface treatment that can improve adhesion between a substrate and a functional layer by preventing oligomers from oozing out onto the substrate surface with the passage of time from surface treatment when performing surface treatment on the surface of a polyester substrate using an atmospheric-pressure plasma treatment, is provided. The method comprises an atmospheric-pressure plasma step for treating the surface of the substrate by atmospheric-pressure plasma, and a heating step for heating the surface of the substrate to a temperature exceeding the glass transition temperature Tg before the atmospheric-pressure plasma treatment step. | 09-15-2011 |
| 20110223356 | COATING APPARATUS AND METHOD WITH INDIRECT THERMAL STABILIZATION - An apparatus includes a work piece support for holding and selectively rotating a work piece, a coating delivery apparatus configured to apply a coating material to the work piece, a susceptor positioned adjacent to the work piece support, and a first electron gun configured to direct a first electron beam at the susceptor such that the susceptor radiates heat toward the work piece. | 09-15-2011 |
| 20110223355 | THERMAL STABILIZATION OF COATING MATERIAL VAPOR STREAM - A coating system includes a work piece, a coating delivery apparatus configured to apply a coating material to the work piece in a plasma-based vapor stream, and a first electron gun configured to direct a first electron beam at the plasma-based vapor stream for adding thermal energy to the coating material in the plasma-based vapor stream. | 09-15-2011 |
| 20090246407 | METHOD FOR FORMING AMORPHOUS CARBON FILM - An amorphous carbon film forming apparatus includes a supporting electrode that is connected to ground and supports a substrate, a counter electrode that is disposed so as to face the supporting electrode and has a mixed-gas injection orifice, a chamber containing the supporting electrode and the counter electrode, and a DC pulse generator having a pulse source that applies a DC pulse voltage between the supporting electrode and the counter electrode. An amorphous carbon film is formed by supplying a mixed gas between the supporting electrode and the counter electrode such that the percentage of the acetylene gas relative to the carrier gas is 0.05% by volume or more and 10% by volume or less, and by generating plasma while a DC pulse voltage having a pulse width of 0.1 μsec or more and 5.0 μsec or less is applied to the counter electrode. | 10-01-2009 |
| 20100015357 | CAPACITIVELY COUPLED PLASMA ETCH CHAMBER WITH MULTIPLE RF FEEDS - A capacitive plasma discharge system employing multiple feeds of RF source power across an area of an electrode. Multiple RF feed locations across the electrode allow for control of the axial electric field across a radius at various azimuth angles of a plasma processing chamber. In an embodiment, a first RF power feed is coupled to a center of an electrode of the capacitively coupled chamber. The first RF power feed is further coupled to a first RF match network. A second RF power feed is coupled to the electrode at a first radius from the first RF power feed and at a first azimuth angle. The second RF power feed is further coupled to a second RF match network. | 01-21-2010 |
| 20100310790 | METHOD OF FORMING CARBON-CONTAINING LAYER - A method of forming a carbon-containing layer is provided. First, a substrate having a target layer thereon is provided. Next, a plasma containing C | 12-09-2010 |
| 20080268173 | PECVD PROCESS CHAMBER BACKING PLATE REINFORCEMENT - The present invention generally comprises a backing plate reinforcement apparatus for use in a plasma enhanced chemical vapor deposition apparatus. When processing large area substrates, the backing plate extending across the chamber may also be quite large. By supporting a central area of the backing plate with a frame structure, the backing plate may be maintained substantially planar. Alternatively, as necessary, the contour of the backing plate may be adjusted to suit the particular needs of the process. | 10-30-2008 |
| 20080248218 | METHOD OF FORMING CARBON NANOTUBES, FIELD EMISSION DISPLAY DEVICE HAVING CARBON NANOTUBES FORMED THROUGH THE METHOD, AND METHOD OF MANUFACTURING FIELD EMISSION DISPLAY DEVICE - There are provided a method of forming carbon nano tubes, a field emission display device having the carbon nanotubes formed using the method, and a method of manufacturing the field emission display device. The method of forming carbon nanotubes includes forming a catalytic metal layer on a substrate, forming an insulation layer on the catalytic metal layer, and forming carbon nanotubes on the insulation layer. | 10-09-2008 |
| 427571000 | With magnetic enhancement | 13 |
| 20100075065 | FILM DEPOSITION OF AMORPHOUS FILMS BY ELECTRON CYCLOTRON RESONANCE - A method is disclosed for forming a film of an amorphous material, for example amorphous silicon, on a substrate ( | 03-25-2010 |
| 20090297730 | RF antenna assembly for treatment of inner surfaces of tubes with inductively coupled plasma - An antenna assembly for forming a barrier coating on the inner surface of a tube by means of a sealed annular chemical-plasma-reaction chamber defined by the inner wall of the tube, two spaced elements slidingly and sealingly moveable inside the tube, and a quartz tube that interconnects the cylindrical elements. The coating is formed by a PE CVD process generated inside the chamber by a transversal RF antenna unit which creates a plasma column that participates in rotation simultaneously with linear motion thus providing uniform coating of the inner surface of the tube. The method of the invention consists of depositing a layer of silicon dioxide onto the inner surface of a plastic tube by means of the aforementioned antenna assembly. The plasma column is rotated by the RF magnetic field which is rotated by using two RF generators of different frequencies that energize two groups of specifically interconnected coils. | 12-03-2009 |
| 20120034394 | DISTRIBUTED MULTI-ZONE PLASMA SOURCE SYSTEMS, METHODS AND APPARATUS - A plasma source includes a ring plasma chamber, a primary winding around an exterior of the ring plasma chamber and multiple ferrites, wherein the ring plasma chamber passes through each of the ferrites. A system and method for generating a plasma are also described. | 02-09-2012 |
| 20120107524 | THIN-FILM MANUFACTURING METHOD AND APPARATUS - A thin-film manufacturing method includes the steps of: generating a plasma from source gas; extracting ions from the plasma; and depositing a thin film on one side or both sides of a substrate to be deposited with the ions. The method is performed in an apparatus including: a plasma chamber generating the plasma; a film deposition chamber accommodating the substrate to be deposited; an ion transfer path for transferring the ions from the plasma chamber to the film deposition chamber; a branch pipe branching from the ion transfer path; and an exhaust system connected to the branch pipe. The thin film is formed while the source gas except the ions is exhausted from the branch pipe. | 05-03-2012 |
| 20090041951 | MAGNETIC ENHANCEMENT FOR MECHANICAL CONFINEMENT OF PLASMA - A method for processing a substrate is provided. The substrate is placed in a process chamber. A gas is provided from a gas source to the process chamber. A plasma is generated from the gas in the process chamber. The gas flows through a gap adjacent to at least one confinement ring to provide physical confinement of the plasma. Magnetic confinement of the plasma is provided to enhance the physical confinement of the plasma. | 02-12-2009 |
| 20100136262 | INDUCTIVE PLASMA SOURCE WITH HIGH COUPLING EFFICIENCY - A method and apparatus are provided for processing a substrate with a radiofrequency inductive plasma in the manufacture of a device. The inductive plasma is maintained with an inductive plasma applicator having one or more inductive coupling elements. There are thin windows between the inductive coupling elements and the interior of the processing chamber. Various embodiments have magnetic flux concentrators in the inductive coupling elements and feed gas holes interspersed among the inductive coupling elements. The thin windows, magnetic flux concentrators, and interspersed feed gas holes are useful to effectuate uniform processing, high power transfer efficiency, and a high degree of coupling between the applicator and plasma. In some embodiments, capacitive current is suppressed using balanced voltage to power an inductive coupling element. | 06-03-2010 |
| 20100003423 | PLASMA GENERATING APPARATUS AND FILM FORMING APPARATUS USING PLASMA GENERATING APPARATUS - The cross section of a beam is flattened by causing a plasma beam ( | 01-07-2010 |
| 20100003422 | DEPOSITION APPARATUS, FILM MANUFACTURING METHOD, AND MAGNETIC RECORDING MEDIUM MANUFACTURING METHOD - A deposition apparatus includes a plasma generating unit that generates an arc discharge between a target and an anode to generate plasma; a deposition chamber in which a base is disposed; and a plasma transfer unit that transfers the plasma to the deposition chamber, wherein at least part of the plasma transfer unit is electrically separated from the plasma generating unit and the deposition chamber, and a negative voltage is applied to at least part of the plasma transfer unit. | 01-07-2010 |
| 20110305847 | LINEAR PLASMA SYSTEM - The invention relates to a linear plasma system. The linear plasma system includes a number of troughs of an electrode alternating with a number of peaks of the electrode forming a sawtooth shape, a reactive gas feed, a precursor gas feed, and a power source. The reactive gas feed is disposed on the electrode and configured to continuously release a reactive gas into an array of holes located at the trough apex. The precursor gas feed is disposed on the electrode and configured to continuously release a precursor gas into an array of holes located at the peak apex. The power source is configured to apply radio frequency power to the electrode to simultaneously interact with the reactive gas mixed with the precursor gas to generate plasma, which is used to create a product that is deposited on a substrate. | 12-15-2011 |
| 20120027954 | MAGNET FOR PHYSICAL VAPOR DEPOSITION PROCESSES TO PRODUCE THIN FILMS HAVING LOW RESISTIVITY AND NON-UNIFORMITY - Methods and apparatus for depositing thin films having high thickness uniformity and low resistivity are provided herein. In some embodiments, a magnetron assembly includes a shunt plate, the shunt plate rotatable about an axis, an inner closed loop magnetic pole coupled to the shunt plate, and an outer closed loop magnetic pole coupled the shunt plate, wherein an unbalance ratio of a magnetic field strength of the outer closed loop magnetic pole to a magnetic field strength of the inner closed loop magnetic pole is less than about 1. In some embodiments, the ratio is about 0.57. In some embodiments, the shunt plate and the outer close loop magnetic pole have a cardioid shape. A method utilizing RF and DC power in combination with the inventive magnetron assembly is also disclosed. | 02-02-2012 |
| 20120064259 | ROTARY MAGNET SPUTTERING APPARATUS - Provided is a rotary magnet sputtering apparatus that reduces an adverse effect due to heating of a target portion and so on caused by an increase in plasma excitation power. The rotary magnet sputtering apparatus has a structure in which the heat is removed from the target portion by causing a cooling medium to flow in helical spaces formed between a plurality of helical plate-like magnet groups or by providing a cooling passage in a backing plate which supports the target portion. | 03-15-2012 |
| 20110177260 | PLASMA CVD DEVICE, METHOD FOR DEPOSITING THIN FILM, AND METHOD FOR PRODUCING MAGNETIC RECORDING MEDIUM - A plasma CVD device that deposits a thin film without using a filament is provided. The plasma CVD device according to the present invention includes: a chamber ( | 07-21-2011 |
| 20110311735 | MAGNETRON DESIGN FOR RF/DC PHYSICAL VAPOR DEPOSITION - Methods and apparatus to improve target life and deposition uniformity in PVD chambers are provided herein. In some embodiments, a magnetron assembly includes a shunt plate having a central axis, the shunt plate rotatable about the central axis, a first open loop magnetic pole arc coupled to the shunt plate at a first radius from the central axis, and a second open loop magnetic pole arc coupled the shunt plate at a first distance from the first open loop magnetic pole arc, wherein at least one of the first radius varies along the first open loop magnetic pole arc or the first distance varies along the second open loop magnetic pole arc. In some embodiments, a first polarity of the first open loop magnetic pole arc opposes a second polarity of the second open loop magnetic pole arc. | 12-22-2011 |
| 427572000 | Light as energy source | 1 |
| 20100028561 | METHOD FOR PRODUCING A COATING BY ATMOSPHERIC PRESSURE PLASMA TECHNOLOGY - A method of coating a substrate includes: providing a substrate ( | 02-04-2010 |
| 427573000 | With heated substrate | 2 |
| 20090181186 | PLASMA ARC COATING SYSTEM - A system for coating a substrate includes a heater that heats the substrate. The heater includes a two-dimensional array of a plurality of heat sources which supply heat to the substrate when the substrate is in the presence of the array of heat sources. The heater further includes a controller that controls the operation of each heat source to heat a localized area of the surface of the substrate according to a predetermined temperature profile for the substrate. | 07-16-2009 |
| 20090017229 | Processing System Platen having a Variable Thermal Conductivity Profile - A platen for a processing system includes a first and a second thermal region that are separated by at least one boundary. A first fluid conduit is positioned in the first thermal region. A second fluid conduit is positioned in the second thermal region. A fluid reservoir having a first output is coupled to the first fluid conduit and a second output that is coupled to the second fluid conduit. The fluid reservoir provides fluid to the first fluid conduit with first fluid conditions that provides a first thermal conductivity to the first thermal region and provides fluid to the second fluid conduit with second fluid conditions that provides a second thermal conductivity to the second thermal region so that a predetermined thermal conductivity profile is achieved in the platen. | 01-15-2009 |
| 427574000 | Silicon containing coating | 1 |
| 20100080933 | MULTI-ELECTRODE PECVD SOURCE - Embodiments of the present invention generally relate to methods and apparatus for plasma generation in plasma processes. The methods and apparatus generally include a plurality of electrodes. The electrodes are connected to a RF power source, which powers the electrodes out of phase from one another. Adjacent electrodes are electrically isolated from one another by electrically insulating members disposed between and coupled to the electrodes. Processing gas may be delivered and/or withdrawn through the electrodes and/or the electrically insulating members. The substrate may remain electrically floating because the plasma may be capacitively coupled to it through a differential RF source drive. | 04-01-2010 |
