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Plasma (e.g., corona, glow discharge, cold plasma, etc.)

Subclass of:

427 - Coating processes

427457000 - DIRECT APPLICATION OF ELECTRICAL, MAGNETIC, WAVE, OR PARTICULATE ENERGY

Patent class list (only not empty are listed)

Deeper subclasses:

Class / Patent application numberDescriptionNumber of patent applications / Date published
427578000 Silicon containing coating material 82
427576000 Metal, metal alloy, or metal oxide coating 70
427577000 Inorganic carbon containing coating material, not as steel (e.g., carbide, etc.) 48
427575000 Generated by microwave (i.e., 1mm to 1m) 45
427570000 Utilizing plasma with other nonionizing energy sources 31
Entries
DocumentTitleDate
20090123662Plasma Coating Device and Method - This invention relates to an apparatus and a method for the plasma coating of large-volume parts. For this purpose, a vacuum chamber (05-14-2009
20080260965Coating of a Polymer Layer Using Low Powder Pulsed Plasma in a Plasma Chamber of a Large Volume - A method for depositing a polymeric material onto a substrate, said method comprising introducing an organic monomeric material in a gaseous state into a plasma deposition chamber, igniting a glow discharge within said chamber, and applying a high frequency voltage as a pulsed field, at a power of from 0.001 to 500 w/m10-23-2008
20100055346PECVD RELEASE LAYER FOR Ni TEMPLATE - The invention relates to a method of depositing a release layer on a Ni surface for use in nano-imprint lithography comprising passivating the Ni surface, etching the passivated Ni surface, and depositing a layer of fluorocarbon on the passivated and etched surface.03-04-2010
20100136261MODULATION OF RF RETURNING STRAPS FOR UNIFORMITY CONTROL - Embodiments of the present invention generally relates to a method and apparatus for processing substrates using plasma. More particularly, embodiments of the present invention provide a plasma processing chamber having an electrode coupled to a plurality of RF returning straps, wherein impedance of the RF returning straps are set and/or adjusted to tune the plasma distribution during processing. In one embodiment, impedance of RF returning straps varies by changing length of the RF returning straps, by changing width of the RF returning straps, by changing spacing of the RF returning straps, by changing location of the RF returning straps, by adding a capacitor to the RF returning straps, or by combinations thereof.06-03-2010
20110195202OXYGEN PUMP PURGE TO PREVENT REACTIVE POWDER EXPLOSION - A method of managing particles and material accumulation in exhaust components used in deposition systems is provided. More specifically, embodiments of the present invention relate to methods of preventing build-up of explosive material in vacuum forelines of deposition systems. In one embodiment, a short purge of oxygen-containing gas may be introduced into the foreline during or in between cycles of deposition of a layer on the substrate in order to oxidize at least a portion of combustible processing by-products in the foreline. In one embodiment, at least a portion of the processing by-products and oxygen-containing gas react to form silicon dioxide (SiO08-11-2011
20130034668Method for Producing Plasma Flow, Method for Plasma Processing, Apparatus for Producing Plasma, and Apparatus for Plasma Processing - Provided are a plasma stream generation method, a plasma processing method, a plasma generation apparatus, and a plasma processing apparatus using same, which enable plasma processing with rotating plasma to be controllably performed with stability and thereby improved in quality. The frequencies in four quadrants Z02-07-2013
20130034667INORGANIC NANOCOATING PRIMED ORGANIC FILM - An inorganic nanolayer surface coated polymer film product is disclosed with enhancements such as improved metallization capability, low cost, low polymer additives and modifiers, improved recyclability, and good web properties. Also method for priming a flexible film substrate to enhance the reactivity or wettability of the substrate for metallization is disclosed. A substrate film is coated with one or more nanolayers of a metal or metal oxide applied by CCVD and/or PECVD at open atmosphere. The deposited coating acts to enhance the surface energy of the film substrate and to and reduce the surface gauge variation of the substrate or supporting film, thereby enhancing the wettability of the film substrate for metallization and/or to improve the anti-block characteristics of the film. The deposited coatings may also act as a barrier layer for lowering the permeability of light, gas and vapor transmission through the substrate.02-07-2013
20130034666INDUCTIVE PLASMA SOURCES FOR WAFER PROCESSING AND CHAMBER CLEANING - Methods and systems for depositing material on a substrate are described. One method may include providing a processing chamber partitioned into a first plasma region and a second plasma region. The method may further include delivering the substrate to the processing chamber, where the substrate may occupy a portion of the second plasma region. The method may additionally include forming a first plasma in the first plasma region, where the first plasma may not directly contact the substrate, and the first plasma may be formed by activation of at least one shaped radio frequency (“RF”) coil above the first plasma region. The method may moreover include depositing the material on the substrate to form a layer, where one or more reactants excited by the first plasma may be used in deposition of the material.02-07-2013
20130084409Method and Device for Atmospheric Pressure Plasma Treatment - A continuous plasma treatment process, said process comprising the steps of: providing a plasma treatment apparatus, said apparatus comprising at least one plasma treatment zone, said plasma treatment zone comprising a pair of electrodes with endless dielectric belts each having a first and a second side and each covering an electrode of said pair of electrodes; producing a non-thermal plasma in a process gas at a pressure of 100 Pa to 1 MPa in the space between said pair of endless dielectric belt-covered electrodes by applying a voltage between said electrode pair; providing a web material to be treated such that it can be transported by said two endless dielectric belts in such a way that there is an area in the plane of said belt at least about 5 mm on either side of said web material on the side of said endless dielectric belts with no part thereof facing one electrode of said pair of electrodes; transporting said web material using said endless dielectric belts in frictional contact with said electrodes such that the side of said web material not in contact with said endless dielectric belts is treated in two passes through said at least one plasma treatment zone while at the same time the exposed parts of the endless dielectric belts transporting said web material are also treated; and cleaning said parts of said endless dielectric belts treated with said plasma using a cleaning station outside said plasma treatment zone prior to said endless dielectric belts re-entering said plasma treatment zone, wherein said electrodes have a length in the transport direction of said endless dielectric belts of at least 10 mm; and an apparatus comprising: at least one plasma treatment zone, said plasma treatment zone comprising a pair of electrodes with endless dielectric belts each having a first and a second side and each covering an electrode of said pair of electrodes; a voltage power supply for each plasma treatment zone connected to said pair of electrodes such that a non-thermal plasma can be produced upon applying a voltage to said electrode pairs in a process gas in the space between each pair of endless dielectric belt-covered electrodes; each of said electrodes in said plasma treatment zone having a discharge surface and said discharge surface being in contact with a first side of said endless dielectric belts thereby shielding said discharge surfaces and the respective sides of the endless dielectric belts in contact with said electrodes from products of said non-thermal plasma; a means of transporting a web material to be treated comprising said endless dielectric belts; a process gas supply; rollers for driving/guiding said endless dielectric belts; and a cleaning station capable of cleaning products of said plasma treatment on the second sides of said endless dielectric belts therefrom.04-04-2013
20130084407PLASMA-ENHANCED DEPOSITION OF COPPER-CONTAINING FILMS FOR VARIOUS APPLICATIONS USING AMIDINATE COPPER PRECURSORS - The disclosure relates to a process for depositing a Copper, Gold or Silver containing film using a Copper, Gold or Silver guanidinate and/or Copper, Gold or Silver amidinate precursor, suitable for plasma deposition at temperature equal or lower than 120 degrees C., to a plasma deposition process carried out at a temperature equal or lower than 120 degrees C.04-04-2013
20130084408VACUUM PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A vacuum processing apparatus includes a discharge chamber with a ridge waveguide having an exhaust-side ridge electrode and a substrate-side ridge electrode between which a plasma is formed; a pair of converters, which convert high-frequency power into TE mode, which represents the basic transmission mode of rectangular waveguides, for transmission to the discharge chamber, and form a plasma between the exhaust-side ridge electrode and the substrate-side ridge electrode; a uniform heating temperature controller, which is disposed on the outer surface of the substrate-side ridge electrode and heats the electrode uniformly; and a heat-absorbing temperature control unit, which is disposed on the outer surface of the exhaust-side ridge electrode and controls thermal flux through the thickness direction of a substrate undergoing plasma processing. The substrate is disposed between the exhaust-side ridge electrode and the substrate-side ridge electrode, and subjected to plasma processing.04-04-2013
20130209703HOLLOW-CATHODE GAS LANCE FOR THE INTERIOR COATING OF CONTAINERS - The disclosure relates to an apparatus for coating a container, for instance a plastic bottle, by means of a plasma treatment, the apparatus comprising at least one high-frequency source, at least one outer electrode located outside the container to be treated, and at least one at least partially electrically conducting gas lance for the supply of process gas into the container, configured to apply a high frequency of the high frequency source to the at least one outer electrode or the at least one gas lance. The gas lance is configured at least in part or in whole as a hollow cathode having at least one internal hollow space. The hollow space of the hollow cathode is fluidically connected to the interior of the container to be treated and to the part of the gas lance that supplies the process gas, for instance, by lateral and/or axial bores or recesses. A plasma can be generated in the interior of the hollow cathode in the at least one hollow space.08-15-2013
20130040072Plasma Booster for Plasma Treatment Installation - Vacuum treatment installation particularly for plasma coating workpieces has an arrangement for boosting and/or igniting a glow discharge plasma for the treatment of workpieces, and at least one hollow body of electrically conductive material, the hollow body including a hollow space and at least one entrance opening through which charge carriers flow in order to make possible ignition and operation of a plasma or to boost an existing plasma.02-14-2013
20090155489VOLTAGE NON-UNIFORMITY COMPENSATION METHOD FOR HIGH FREQUENCY PLASMA REACTOR FOR THE TREATMENT OF RECTANGULAR LARGE AREA SUBSTRATES - A vacuum vessel and at least two electrodes define an internal process space. At least one power supply is connectable with the electrodes. A substrate holder holds a substrate to be treated in the internal process space. At least one of the electrodes has along a first cross section a concave profile and has along a second cross section a convex profile, the first cross section being parallel to the second cross section. Gas is provided to the space through a gas inlet. Power is provided to the electrodes and the substrate is treated.06-18-2009
20090155488SHOWER PLATE ELECTRODE FOR PLASMA CVD REACTOR - Methods and apparatuses for plasma chemical vapor deposition (CVD). In particular, a plasma CVD apparatus having a cleaning function, has an improved shower plate with holes having a uniform cross-sectional area to yield a high cleaning rate. The shower plate may serve as an electrode, and may have an electrically conductive extension connected to a power source. The shower plate, through which both cleaning gases and reaction source gases flow, may include a hole machined surface area with a size different than conventionally used to ensure a good film thickness uniformity during a deposition process. The size of the hole machined surface area may vary based on the size of a substrate to be processed, or the size of the entire surface of the shower plate.06-18-2009
20100104769AUTOMOTIVE COATING SURFACE ENHANCEMENT USING A PLASMA TREATMENT TECHNIQUE - A technique of treating an automotive coating to modify surface-specific physical properties thereof while retaining bulk physical properties of the automotive coating includes the step of generating a plasma discharge in a plasma generating assembly. The automotive coating is treated with the plasma discharge. The automotive coating is completely cured prior to treatment with the plasma discharge. To treat the automotive coating, either 1) a precursor material is introduced into the plasma discharge to form a thin film on the automotive coating, or 2) the plasma discharge is free of a precursor material and weak bonds are destroyed on or near the surface of the automotive coating.04-29-2010
20130045338MANUFACTURING OF DIFFRACTIVE PIGMENTS BY FLUIDIZED BED CHEMICAL VAPOR DEPOSITION - Microstructured pigments include a dielectric core having a diffraction grating. The microstructured dielectric core is encapsulated with one or more encapsulation layers which are deposited using chemical vapor deposition in a fluidized bed. The fluidizing conditions allow for providing uniform and highly-conforming encapsulation layers.02-21-2013
20130045337HOMOGENEOUS MODIFICATION OF POROUS FILMS - Porous films are homogeneously and partially (but not completely) filled. A composition (that includes a polymer) is brought into contact with a planar film that has interconnected pores throughout the film. The polymer then partially fills the pores within the film, e.g., in response to being heated. An additional treatment such as heating the polymer and/or applying radiation to the polymer increases the Young's modulus of the film.02-21-2013
20090148624PLASMA CVD APPARATUS AND METHOD - A plasma CVD apparatus includes a an electrode array in a reaction chamber, the electrode array including a plurality of inductively coupled electrodes, each electrode being folded back at the center so that each electrode is substantially U-shaped with two parallel straight portions, the electrodes are arranged such that all of the parallel straight portions are arranged parallel to each other in a common plane, each of the electrodes having at least a portion with a diameter of 10 mm or less, and a phase controlled power supply for feeding high frequency power to the feeding portions so as to establish a standing wave of a half wavelength or natural number multiple of a half wavelength between a feeding portion and a folded back portion and between a grounded portion and the folded back portion, and is controlled to have a phase difference between adjacent two feeding portions.06-11-2009
20100104771ELECTRODE AND POWER COUPLING SCHEME FOR UNIFORM PROCESS IN A LARGE-AREA PECVD CHAMBER - Embodiments discussed herein generally include electrodes having parallel ferrite boundaries that suppress RF currents perpendicular to the ferrite boundary and absorb magnetic field components parallel to the boundary. The ferrites cause the standing wave to stretch outside the ferrites and shrink inside the ferrite. Thus, the RF current on the uncovered electrode area will be a plane wave, quasi-uniform (in a direction perpendicular to the ferrites) propagating in the direction parallel to the ferrites.04-29-2010
20100104772ELECTRODE AND POWER COUPLING SCHEME FOR UNIFORM PROCESS IN A LARGE-AREA PECVD CHAMBER - Embodiments discussed herein generally include electrodes having parallel ferrite boundaries that suppress RF currents perpendicular to the ferrite boundary and absorb magnetic field components parallel to the boundary. The ferrites cause the standing wave to stretch outside the ferrites and shrink inside the ferrite. A plurality of power sources are coupled to the electrode. The phase of the VHF current delivered from the power sources may be modulated to move the standing wave that is perpendicular to the ferrites in a direction parallel to the ferrites. Thus, the VHF current on the uncovered electrode area will be a plane wave, quasi-uniform (in a direction perpendicular to the ferrites) propagating in the direction parallel to the ferrites.04-29-2010
20100104770TWO-STEP FORMATION OF HYDROCARBON-BASED POLYMER FILM - A method of forming a surface-treated hydrocarbon-based polymer film includes: supplying a hydrocarbon gas as a source gas, and an inert gas, and applying RF power to generate a plasma and form a hydrocarbon-based principal film on a substrate; and without extinguishing a plasma, changing flow of the hydrocarbon gas and the inert gas by continuously decreasing a flow ratio of the hydrocarbon gas to the inert gas with time to treat a surface of the principal film on the substrate.04-29-2010
20130029061ELECTRON BEAM PLASMA CHAMBER - A method and apparatus for tailoring the formation of active species using one or more electron beams to improve gap-fill during an integrated circuit formation process is disclosed herein. The energy of the electron beams may be decreased to maximize electrons leading to radicals or increased to maximize electrons leading to ions, depending on the fill application. An apparatus comprising multiple impinging jets of gas perpendicular to one or more electron beams is also disclosed.01-31-2013
20130052369PLASMA REACTOR - A plasma reactor with a recipient (02-28-2013
20110003088PLASMA CVD APPARATUS, PLASMA CVD METHOD, AND AGITATING DEVICE - The present invention provides a plasma CVD apparatus and a plasma CVD method capable of efficiently coating the surfaces of fine particles with a thin film or super-fine particles by concentrating a plasma near the fine particles. The plasma CVD apparatus according to the present invention is characterized by including a chamber 01-06-2011
20090304949SHORT PULSE ATMOSPHERIC PRESSURE GLOW DISCHARGE METHOD AND APPARATUS - Method and plasma generating apparatus for generating an atmospheric pressure glow discharge plasma in a treatment space (12-10-2009
20130071581PLASMA MONITORING AND MINIMIZING STRAY CAPACITANCE - The present invention generally relates to a capacitively coupled plasma (CCP) processing chamber, a manner to reduce or prevent stray capacitance, and a manner to measure plasma conditions within the processing chamber. As CCP processing chambers increase in size, there is a tendency for stray capacitance to negatively impact the process. Additionally, RF ground straps may break. By increasing the spacing between the chamber backing plate and the chamber wall, stray capacitance may be minimized. Additionally, the plasma may be monitored by measuring the conditions of the plasma at the backing plate rather than at the match network. In so measuring, the plasma harmonic data may be analyzed to reveal plasma processing conditions within the chamber.03-21-2013
20130059092METHOD AND APPARATUS FOR GAS DISTRIBUTION AND PLASMA APPLICATION IN A LINEAR DEPOSITION CHAMBER - A method and apparatus for processing a substrate is described. One embodiment of the invention provides an apparatus for forming thin films. The apparatus comprises a chamber defining an internal volume, a plasma source disposed within the internal volume, and at least one gas injection source disposed adjacent the plasma source within the internal volume, wherein the at least one gas injection source comprises a first channel and a second channel for delivering gases to the internal volume, the first channel delivering a gas at a first pressure or a first density and the second channel delivering a gas at a second pressure or a second density, the first pressure or the first density being different than the second pressure or the second density.03-07-2013
20110014397APPARATUS AND METHOD FOR PROCESSING SUBSTRATE - A substrate processing apparatus includes a chamber defining a process space where a process is carried out with respect to a substrate, a first supply member configured to supply a first source gas toward the process space, a plasma source configured to generate an electric field in the process space to create radicals from the first source gas, and a second supply member located below the first supply member for supplying a second source gas toward the substrate. A support member is installed in the chamber. The second supply member has a supply nozzle disposed, such that a lower end of the supply nozzle corresponds to a center of the substrate placed on the support member, for supplying the second source gas toward the center of the substrate.01-20-2011
20110014396RECIRCULATING LINEAR ROLLING BUSHING - A method and apparatus for a linear motion device is described. In one embodiment, linear motion device includes a housing having a bore formed therethrough along a longitudinal axis and at least two raceways formed at least partially in the housing having a plurality of bearing elements movably disposed therein. Each of the at least two raceways include a first channel disposed in a first radial plane relative to the longitudinal axis, and a second channel connected to the first channel and disposed in the first radial plane inward of the first channel, the second channel including a longitudinal slit allowing at least a portion of the plurality of bearing elements to extend into the bore.01-20-2011
20110014395METHOD FOR DEPOSITING A FLUORINATED LAYER FROM A PRECURSOR MONOMER - A method for depositing a fluorinated layer on a substrate includes the injection of a gas mixture including a fluorinated compound and a carrier gas in a discharge or post-discharge area of a cold atmospheric plasma at a pressure comprised between 0.8 and 1.2 bars. The fluorinated compound has a boiling temperature at a pressure of 1 bar above 25° C.01-20-2011
20110014394 FILM DEPOSITING APPARATUS AND METHOD - A film depositing apparatus comprises: a vacuum vessel; an evacuating unit for evacuating the interior of the vacuum vessel; a gas supply source for supplying the vacuum vessel with gases necessary for film deposition; a backing plate that is placed within the vacuum vessel for holding a target formed by sintering; a substrate holder for holding a deposition substrate within the vacuum vessel in a face-to-face relation with the backing plate; and a power supply unit for supplying electric power between the backing plate and the substrate holder to generate a plasma within the vacuum vessel, wherein the backing plate has a smaller thermal expansion coefficient than that of the target which has a sinter density of at least 95%, the sinter density representing the ratio of the actual weight of a sintered form of the target to its theoretical weight.01-20-2011
20090047446UNIFORMITY CONTROL FOR LOW FLOW PROCESS AND CHAMBER TO CHAMBER MATCHING - Apparatus and methods for distributing gases into a processing chamber are disclosed. In one embodiment, the apparatus includes a gas distribution plate having a plurality of apertures disposed therethrough and a blocker plate having both a plurality of apertures disposed therethrough and a plurality of feed through passageways disposed therein. A first gas pathway delivers a first gas through the plurality of apertures in the blocker plate with sufficient pressure drop to more evenly distribute the gases prior to passing through the gas distribution plate. A bypass gas pathway delivers a second gas through the plurality of feed through passageways in the blocker plate and to areas around the blocker plate prior to the second gas passing through the gas distribution plate.02-19-2009
20090269512NONPLANAR FACEPLATE FOR A PLASMA PROCESSING CHAMBER - A method and apparatus for adjust local plasma density during a plasma process. One embodiment provides an electrode assembly comprising a conductive faceplate having a nonplanar surface. The nonplanar surface is configured to face a substrate during processing and the conductive faceplate is disposed so that the nonplanar surface is opposing a substrate support having an electrode. The conductive faceplate and the substrate support form a plasma volume. The nonplanar surface is configured to adjust electric field between the conductive plate and the electrode by varying a distance between the conductive plate and the electrode.10-29-2009
20130064992Process for Eliminating Fog Particles on a Surface of High P Concentration PSG Film - A process for eliminating fog particles on a surface of a high P concentration PSG film is provided. The process mainly comprises steps of: feeding oxygen to a plasma environment in a reaction chamber; mixing plasma with oxygen; causing oxygen to react with unstable phosphorus atoms in the PSG film by using energy of plasma; and forming a passive film on the surface of the PSG film to prevent phosphorus in the PSG film from reacting with hydrogen and oxygen in the air. With the process for eliminating fog particles on a surface of a high P concentration PSG film, by feeding oxygen into the reaction chamber, the high-density plasma can be mixed with oxygen effectively, so as to achieve formation of the passive film on the surface of the phosphosilicate glass and thereby block water vapour from contacting boron and phosphorus to cause crystallization.03-14-2013
20090238997METHOD AND APPARATUS FOR DEPOSITION USING PULSED ATMOSPHERIC PRESSURE GLOW DISCHARGE - Method and apparatus for deposition of a chemical compound or element using an atmospheric pressure glow discharge plasma in a treatment space (09-24-2009
20090238995SHEET-LIKE PLASMA GENERATOR AND FILM DEPOSITION METHOD AND EQUIPMENT EMPLOYING SUCH SHEET-LIKE PLASMA GENERATOR - The present invention provides a sheet-like plasma generator in which film deposition area can be enlarged while making the film thickness distribution more uniform, and film deposition equipment employing such sheet-like plasma generator. The sheet-like plasma generator generates sheet-like plasma by passing a plasma beam, which let out from a plasma gun by means of a convergence coil, through a magnetic field formed by a sheet magnet assembly consisting of a pair of sheet magnets in the form of permanent magnets extending in the direction perpendicular to the advancing direction of the plasma beam and arranged in parallel to oppose each other, and deforming the plasma beam into a sheet-like plasma beam. The sheet magnet assembly includes at least one sheet magnet in which the repulsion field strength at a portion corresponding to the central side of the plasma beams is higher than that at a portion corresponding to the outer edge side of the plasma beam.09-24-2009
20090238996Substrate For Growth of Carbon Nanotube, Method for Growth of Carbon Nanotube, Method for Control of Particle Diameter of Catalyst for Growth of Carbon Nanotube and Method for Control of Carbon Nanotube Diameter - A substrate for the growth of a carbon nanotube having a catalyst layer microparticulated by using an arc plasma gun. CNT is grown on the catalyst layer by thermal CVD or remote plasma CVD. The particle diameter of the catalyst for the growth of CNT is regulated by the number of shots of the are plasma gun. CNT is grown on the catalyst layer having a regulated catalyst particle diameter by thermal CVD or remote plasma CVD to regulate the inner diameter or outer diameter of CNT.09-24-2009
20110014398FILM DEPOSITION APPARATUS AND FILM DEPOSITION METHOD - A film formation device (01-20-2011
20120114877Radical Reactor with Multiple Plasma Chambers - Two or more plasma chambers are provided in a radical reactor to generate radicals of gases under different conditions for use in atomic layer deposition (ALD) process. The radical reactor has a body with multiple channels and corresponding process chambers. Each plasma chamber is surrounded by an outer electrode and has an inner electrode extending through the chamber. When voltage is applied across the outer electrode and the inner electrode with gas present in the plasma chamber, radicals of the gas is generated in the plasma chamber. The radicals generated in the plasma chamber are then injected into a mixing chamber for mixing with radicals of another gas from another plasma chamber, and injected onto the substrate. By providing two or more plasma chambers, different radicals of gases can be generated within the same radical reactor, which obviates the need for separate radical generators.05-10-2012
20120231180PROCESS OF PURIFYING RUTHENIUM PRECURSORS - Disclosed are methods of purifying a ruthenium containing precursor by removing oxygen from the ruthenium containing precursor by flowing an inert gas through the ruthenium containing precursor. Also disclosed are methods of forming an improved ruthenium containing film using the purified ruthenium containing precursor.09-13-2012
20130164458APPARATUS AND METHOD - The invention is related to an apparatus and a method for processing a surface of a substrate by exposing the surface of the substrate to alternating surface reactions of at least a first starting material and a second starting material according to the principles of atomic layer deposition method. According to the invention a first starting material is fed on the surface of the substrate locally by means of a source by moving the source in relation to the substrate, and the surface of the substrate processed with the first starting material is exposed to a second starting material present in the atmosphere surrounding the source.06-27-2013
20090202741Multiple Phase RF Power for Electrode of Plasma Chamber - RF power is coupled with different phase offsets to different RF connection points on an electrode of a plasma chamber. Preferably, the number of different RF connection points and corresponding phase offsets is at least four, and the positions of the RF connection points are distributed along two orthogonal dimensions of the electrode. Preferably, power to each respective RF connection point is supplied by a respective RF power supply, wherein each power supply synchronizes its phase to a common reference RF oscillator.08-13-2009
20100266785INTERMEDIATE TRANSFER MEMBER, METHOD FOR MANUFACTURING INTERMEDIATE TRANSFER MEMBER AND IMAGE-FORMING APPARATUS - An intermediate transfer member that is provided with a base member containing polyphenylene sulfide and polyamide, and a semi-conductive inorganic layer having a volume specific resistance in the range from 10-21-2010
20090087583Film Deposition Method, Film Deposition Apparatus, and Storage Medium - An object to be processed (e.g., semiconductor wafer W) having a recess formed in a surface thereof is placed on a stage 04-02-2009
20110300310Method and Device for Coating Functional Surfaces - A method and system for coating the functional surfaces of symmetrically serrated components, in particular the tooth flanks of gears, includes a coating source emitting coating material in the form of electrically charged particles in the direction of a revolving component. A high-quality functional surface coating of the component is achieved in that a shield is arranged in the beam path between the component and the coating source transversely to the irradiation direction, which shields the component from the coating beam in a contour area with a functional surface orientation inclined flatly with respect to the irradiation direction.12-08-2011
20110300309PLASMA FILM DEPOSITION METHOD - A plasma nozzle supplies a plasmatized electric discharge gas, and a first supply section in a flow regulator which is interposed between the plasma nozzle and a base member supplies a first liquid-phase raw material. A second supply section which is separate from the first supply section supplies a second liquid-phase raw material. The first liquid-phase raw material which is activated by a plasmatized electric discharge gas and deposited on the base member while in a liquid phase is caused to interact with the second liquid-phase raw material which is activated by the plasmatized electric discharge gas, and solidified into a film on the base member.12-08-2011
20110287193APPARATUS AND METHOD FOR TREATING AN OBJECT - The invention relates to an apparatus for treating an object using a plasma process. The apparatus comprises a supporting structure for supporting the object, and an electrode structure for generating the plasma process. Further, the apparatus comprises multiple gas flow paths for separately flowing materials towards the object. In addition, downstream sections of at least two gas flow paths of the multiple gas flow paths substantially coincide.11-24-2011
20110293852ORGANOMETALLIC PRECURSOR COMPOUNDS - This invention relates to organometallic precursor compounds represented by the formula (H)12-01-2011
20110293854ATOMIC LAYER GROWING APPARATUS AND THIN FILM FORMING METHOD - An atomic layer growing apparatus introduces an organic metal gas containing hydrogen to a deposition vessel to cause an organic metal component to be adsorbed on a substrate. Then, the apparatus introduces an oxidizing gas or a nitriding gas to the deposition vessel to generate plasma, thereby oxidizing or nitriding the organic metal component deposited on the substrate. When the plasma is generated, the apparatus detects emission intensity of a predetermined wavelength of light emitted on the substrate through an observation window provided in the deposition vessel. When the detected emission intensity becomes a predetermined value or less, the apparatus stops the generation of the plasma.12-01-2011
20110293853THIN FILM FORMING APPARATUS AND THIN FILM FORMING METHOD - A thin film forming apparatus controls pressures of a first internal space in a deposition vessel and a second internal space provided in the first internal space according to determined pressure conditions, respectively. The apparatus causes a source gas to flow onto a substrate in the second internal space and supplies a high-frequency power to a plasma source provided in the first internal space according to the pressure conditions, thereby generating plasma in the second internal space to form a thin film on the substrate.12-01-2011
20110268891GAS DELIVERY DEVICE - A gas delivery device is for use in low pressure Atomic Layer Deposition at a substrate location. The device includes a first generally elongate injector for supplying process gas to a process zone, a first exhaust zone circumjacent the process zone, and a further injector circumjacent the first exhaust gas for supplying purge or inert gas at an outlet surrounding the process zone having a wall for facing the location circumjacent the outlet to define at least a partial gas seal.11-03-2011
20110217484METHOD FOR REPAIRING SEAL SEGMENTS OF ROTOR/STATOR SEALS OF A GAS TURBINE - The subject of the invention is a method for repairing sealing surfaces of seal segments, arranged on the inner circumference of a turbine casing section, of a rotor/stator seal of a gas turbine. With the method according to the invention, first of all material is removed from the sealing surfaces of the seal segments with the exception of the base material of the seal segments, a metallic reinforcing coating with a material thickness of at least 1 mm is applied, and then a ceramic coating with a material thickness of 0.3 to 2 mm is applied to it.09-08-2011
20100112235METHOD FOR TREATING PLASMA UNDER CONTINUOUS ATMOSPHERIC PRESSURE OF WORK PIECES, IN PARTICULAR, MATERIAL PLATES OR STRIPS - The invention relates to a method for treating plasma under continuous atmospheric pressure of, in particular, electrically insulating workpieces, in particular material plates or strips. According to said method, the workpiece which is to be machined, is arranged at a distance below at least one electrode which is made of two barrier electrodes, which are arranged in a successive manner in the direction of displacement with a gap, and which extends in a manner which is transversal to the direction of displacement at least over the width of the surface of the workpiece which is to be machined. The electrode and the workpiece are mutually offset in the direction of displacement. High voltage, which is in the form of an alternating voltage, is applied to the barrier electrodes, in order to provoke at least plasma discharge in the gap. The plasma discharge is driven by the gas flow from the gap in the direction of the surface of the workpiece which is to be machined. The invention is characterised in that the surfaces of the barrier electrodes which are oriented towards the surface of the workpiece which is to be machined are impinged upon with high pressure.05-06-2010
20090169769DEPOSITION APPARATUS AND DEPOSITION METHOD - A deposition apparatus includes: a first electrode for placing a processing object; a second electrode for generating plasma with the first electrode, the second electrode being opposed to the first electrode; and a cooling part for cooling the processing object, wherein between the processing object and the cooling part, as compared with a thermal resistance between a central part of the processing object and the cooling part, a thermal resistance between a peripheral part peripheral to the central part and the cooling part is small.07-02-2009
20100112236Facilitating Adhesion Between Substrate and Patterned Layer - Systems and methods for adhering a substrate to a patterned layer are described. Included are in situ cleaning and conditioning of the substrate, and the application of an adhesion layer between the substrate and the patterned layer, as well as forming an intermediate layer between adhesion materials and the substrate.05-06-2010
20110262660CHALCOGENIDE-CONTAINING PRECURSORS, METHODS OF MAKING, AND METHODS OF USING THE SAME FOR THIN FILM DEPOSITION - Disclosed are chalcogenide-containing precursors for use in the manufacture of semiconductor, photovoltaic, LCD-TFT, or flat panel type devices. Also disclosed are methods of synthesizing the chalcogenide-containing precursors and vapor deposition methods, preferably thermal ALD, using the chalcogenide-containing precursors to form chalcogenide-containing films.10-27-2011
20090087584METHOD OF CONTROLLING PORE CONDITIONS OF POROUS METAL - The pore size, porosity, and pore distribution of a porous metal is controlled by applying a plasma spraying to the surface of the porous metal.04-02-2009
20100098882PLASMA SOURCE FOR CHAMBER CLEANING AND PROCESS - Apparatus and methods for processing a substrate and processing a process chamber are provided. In one embodiment, an apparatus is provided for processing a substrate including a power source, a switch box coupled to the power source and the switch box having a switch interchangeable between a first position and a second position, a first match box coupled to the switch box, a plasma generator coupled to the first match box, a second match box coupled to the switch box, and a remote plasma source coupled to the second match box.04-22-2010
20100098881System and Method for Chemical Vapor Deposition Process Control - A system and method for controlling deposition of thin films on substrates is disclosed. One embodiment includes providing the substrate; providing a plurality of sources configured to emit electromagnetic radiation; providing a first amount of power to a first of the plurality of sources; and providing a second amount of power to a second of the plurality of sources; wherein the first amount of power and the second amount of power are different to thereby control deposition of the film onto the substrate.04-22-2010
20090104374Substrate Processing Method Using A Substrate Processing Apparatus - A substrate processing apparatus vacuum reactor is internally divided into an upper part and a lower part that are separated from each other by an electrically conductive partitioning plate grounded. The upper part of the vacuum reactor is a plasma discharge space in which an rf electrode is arranged, and the lower part of the vacuum reactor is a substrate process space in which a substrate support mechanism is disposed. The partitioning plate has a plurality of through-holes that are provided to pass vertically through it, and has an internal space that is isolated from the plasma discharge space and communicates with the substrate process space. Each of the plurality of through-holes provided on the partitioning plate has a vertical length of between 5 mm and 30 mm, a bore diameter of between 5 mm and 30 mm and an aspect ratio of above 1 and below 2.04-23-2009
20090286009METHOD FOR OPERATING A CHEMICAL DEPOSITION CHAMBER - A method for operating a chemical deposition chamber is disclosed. First, a digital liquid flow controller is provided to guide a precursor fluid into a chemical deposition chamber. Then, a pre-cleaning step is performed in the chemical deposition chamber. Later, a pre-tuning step is performed on the digital liquid flow controller so that the precursor fluid can be substantially stably guided into the chemical deposition chamber. Afterwards, the chemical deposition chamber is used to carry out the chemical deposition.11-19-2009
20090291232METHOD AND APPARATUS FOR GROWING PLASMA ATOMIC LAYER - Oxygen gas, for example, is introduced into a film forming chamber, and high-frequency power is supplied to a plurality of monopole antennas arranged above a silicon substrate (11-26-2009
20080213505METHOD FOR SYNTHESIZING SELF-ALIGNED CARBON NANOMATERIALS ON LARGE AREA - The present invention provides a method for depositing self-aligned carbon nanomaterials (carbon nanoflake, carbon nanotube, carbon nanorod and carbon nanosphere), by inducing a gas chemistry for the carbon nanomaterials, on a substrate having a large area of several inches in diameter, under the conventional CVD diamond deposition conditions. The well-aligned carbon nanomaterials on the large area are applicable for sensitive base materials in the fields including biochemistry and electrochemistry.09-04-2008
20080311312Method for surface treatment of substrate and method for forming fine wiring - The present invention related to a method for surface treatment and a method for forming fine wiring and more particularly, to a method for surface treatment of a substrate, including: preparing a substrate on which a fine wiring is to be formed; and treating the surface of the substrate with a fluorine containing liquid having a low boiling point, and a method for forming fine wiring using the same method. According to the present invention, not only the spreading of ink droplets but also the deterioration of the interface adhesion is avoided.12-18-2008
20110206862Titanium Nitride Film Deposition by Vapor Deposition Using Cyclopentadienyl Alkylamino Titanium Precursors - Disclosed are cyclopentadienyl alkylamino titanium precursors selected from the group consisting of Ti(iPr08-25-2011
20110200763PROCESS AND INSTALLATION FOR DEPOSITING FILMS SIMULTANEOUSLY ONTO BOTH SIDES OF A SUBSTRATE - A process for the simultaneous deposition of films onto both sides of a substrate (08-18-2011
20080274299APPARATUS AND METHOD FOR HYBRID CHEMICAL PROCESSING - In one embodiment, an apparatus for performing an atomic layer deposition (ALD) process is provided which includes a chamber body containing a substrate support, a lid assembly attached to the chamber body, a remote plasma system (RPS) in fluid communication with the reaction zone, a centralized expanding conduit extending through the lid assembly and expanding radially outwards, a first gas delivery sub-assembly configured to deliver a first process gas, and a second gas delivery sub-assembly configured to deliver a second process gas into the centralized expanding conduit. The first gas delivery sub-assembly contains an annular channel encircling and in fluid communication with the centralized expanding conduit, wherein the annular channel is adapted to deliver the first process gas through a plurality of passageways and nozzles and into the centralized expanding conduit. The second gas delivery sub-assembly contains a gas inlet in fluid communication to the centralized expanding conduit.11-06-2008
20080274297Asymmetric Grounding of Rectangular Susceptor - An asymmetrically grounded susceptor used in a plasma processing chamber for chemical vapor deposition onto large rectangular panels supported on and grounded by the susceptor. A plurality of grounding straps are connected between the periphery of the susceptor to the grounded vacuum chamber to shorten the grounding paths for RF electrons. Flexible straps allow the susceptor to vertically move. The straps provide a conductance to ground which is asymmetric around the periphery. The straps may be evenly spaced but have different thicknesses or different shapes or be removed from available grounding point and hence provide different RF conductances. The asymmetry is selected to improve the deposition uniformity and other qualities of the PECVD deposited film.11-06-2008
20080280065Method and Device for Generating a Low-Pressure Plasma and Applications of the Low-Pressure Plasma - The present invention relates to a method for generating a low-pressure plasma, in which a partial vacuum is generated by means of a vacuum pump in a low-pressure chamber, and a plasma jet is introduced at higher pressure into the low-pressure chamber. The present invention also relates to various applications of the low-pressure plasma for surface pretreatment, for surface coating, or for treating gases. The present invention also relates to a device for generating a low-pressure plasma.11-13-2008
20080280066Apparatus and Method for Coating a Substrate - An apparatus for coating a substrate using physical vapour deposition, including a vacuum chamber wherein a coil is placed for keeping an amount of conductive material in levitation and for heating and evaporating that material, using a varying electric current in the coil. Isolating member are placed in the coil to isolate the coil from the levitated material. The isolating member is part of a container made of non-conductive material. The container has one or more openings for guiding evaporated conductive material to the substrate to be coated. A method for coating a substrate using physical vapour deposition is also presented.11-13-2008
20080286492APPARATUS AND METHOD FOR DEPOSITING MULTIPLE COATING MATERIALS IN A COMMON PLASMA COATING ZONE - An apparatus and method for coating a substrate moved along a path of travel through the apparatus. A plasma source issues a plasma jet into which a first reagent is injected from a discharge orifice located upstream of the jet. A second reagent is injected into the jet from a discharge orifice located downstream of the jet. A controller is configured to regulate the flow of the first reagent according to a first set of parameters and regulate the flow of the second reagent according to a second set of parameters. As a result, the first and second reagents are applied to the substrate to form at least one layer of a coating on the substrate.11-20-2008
20080286491SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A substrate processing method capable of controlling the internal pressure of a processing chamber to a high pressure and exhausting gases within the processing chamber at a high rate. The substrate processing method is for use in a substrate processing apparatus having a processing chamber, a supply unit supplying a processing gas into the processing chamber, a first pipe connected to the processing chamber at one end thereof, a turbo molecular pump disposed in the first pipe, a first shutoff valve disposed between the processing chamber and the turbo molecular pump in the first pipe, a second pipe connected to the processing chamber at one end thereof, a pressure control valve disposed in the second pipe, and a dry pump connected to the other end of the first pipe and to the other end of the second pipe. The substrate processing method comprises a pressure control step of controlling the internal pressure of the processing chamber using the pressure control valve after closing the first shutoff valve when performing a treatment on a substrate housed in the processing chamber; a first exhaust step of exhausting gases within the processing chamber through the second pipe using the dry pump by opening the pressure control valve after performing the treatment on the substrate; and a second exhaust step of exhausting gases within the processing chamber through the first pipe using the turbo molecular pump by closing the pressure control valve and opening the first shutoff valve after the first exhaust step.11-20-2008
20080286489Variable Volume Plasma Processing Chamber and Associated Methods - A plasma processing chamber includes a substrate support having a top surface defined to support a substrate in a substantially horizontal orientation within the chamber. The plasma processing chamber also includes a number of telescopic members disposed within the chamber outside a periphery of the substrate support. The number of telescopic members are also disposed in a concentric manner with regard to a center of the top surface of the substrate support. Each of the number of telescopic members is defined to be independently moved in a substantially vertical direction so as to enable adjustment of an open volume above the top surface of the substrate support, and thereby enable adjustment of a plasma condition within the open volume above the top surface of the substrate support.11-20-2008
20080292811CHAMBER IDLE PROCESS FOR IMPROVED REPEATABILITY OF FILMS - Methods and apparatus for improving the substrate-to-substrate uniformity of silicon-containing films deposited by vapor deposition of precursors vaporized from a liquid source on substrates in a chamber are provided. The methods include exposing a chamber to a processing step at a predetermined time that is after one substrate is processed in the chamber and is before the next substrate is processed in the chamber. In one aspect, the processing step includes introducing a flow of a silicon-containing precursor into the chamber for a period of time. In another aspect, the processing step includes exposing the chamber to a gas in the presence or absence of a plasma for a period of time.11-27-2008
20080305275CVD system and substrate cleaning method - An insulating film deposition chamber 12-11-2008
20080260966PLASMA PROCESSING METHOD - Embodiments of the present invention relate to plasma processing apparatus and methods of use thereof. In some embodiments, a method of controlling a plasma in a process chamber includes providing a chamber for processing a substrate and having a processing volume defined therein wherein a plasma is to be formed during operation, the chamber further having a plasma control magnet assembly comprising a plurality of magnets that provide a magnetic field having a magnitude is greater than about 10 Gauss in an upper region of the processing volume and less than about 10 Gauss in a lower region of the processing volume proximate a substrate to be processed; supplying a process gas to the chamber; and forming a plasma in the processing volume from the process gas.10-23-2008
20110206863ORGANOMETALLIC COMPOUNDS HAVING STERICALLY HINDERED AMIDES - This invention relates to organometallic compounds represented by the formula M(NR08-25-2011
20090011145Method of Manufacturing Vanadium Oxide Thin Film - Provided is a method of manufacturing a large-sized vanadium oxide thin film having a uniform surface, uniform film thickness and stable composition. According to the method, a vanadium-organometallic compound gas is injected into a chamber to form adsorption layer where molecules of the vanadium-organometallic compound are adsorbed on the surface of a substrate. After that, an oxygen precursor is injected into the chamber and thus allowed to accomplish surface-saturation reaction with the adsorbed materials to fabricate a vanadium oxide thin film.01-08-2009
20100136260FILM FORMATION METHOD IN VERTICAL BATCH CVD APPARATUS - A film formation method, in a vertical batch CVD apparatus, is preset to repeat a cycle a plurality of times to laminate thin films formed by respective times. The cycle alternately includes an adsorption step of adsorbing a source gas onto a surface of the target substrates and a reaction step of causing a reactive gas to react with the adsorbed source gas. The adsorption step is arranged to make a plurality of times a supply sub-step of performing supply of the source gas to the process field with an intermediate sub-step of stopping supply of the source gas to the process field interposed therebetween, while maintaining a shut-off state of supply of the reactive gas. The reaction step is arranged to continuously perform supply of the reactive gas to the process field, while maintaining a shut-off state of supply of the source gas.06-03-2010
20100143607Precursors for Depositing Group 4 Metal-Containing Films - Described herein are Group 4 metal-containing precursors, compositions comprising Group 4 metal-containing precursors, and deposition processes for fabricating conformal metal containing films on substrates. In one aspect, the Group 4 metal-containing precursors are represented by the following formula I:06-10-2010
20090181185METHOD AND APPARATUS FOR SURFACE TREATMENT OF CONTAINERS OR OBJECTS - The invention relates to a method and a device for treating the surfaces of containers or objects in which the inner surfaces to be treated are exposed to functionalizing plasma during a process step, and/or to coating plasma during a further process step. The functionalizing plasma and the coating plasma are preferably produced by a plasma source which is located inside or outside the containers or objects.07-16-2009
20090081382Plasma Processing Plant - A plasma processing plant for plastic bottles, having a vacuum chamber arranged inside the processing chamber and when a respective bottle opening is pressed against a valve, the valve will open and establish a connection between the interior of the bottle and the vacuum chamber, and the chambers are continuously sealed against one another in a gastight fashion. With such approach, the gas can be conducted more easily and the number of control mechanisms can be reduced.03-26-2009
20090136684ORGANOMETALLIC COMPOUNDS, PROCESSES FOR THE PREPARATION THEREOF AND METHODS OF USE THEREOF - This invention relates to organometallic precursor compounds represented by the formula (Cp(R′)05-28-2009
20090186167ATMOSPHERIC PRESSURE PLASMA, GENERATING METHOD, PLASMA PROCESSING METHOD AND COMPONENT MOUNTING METHOD USING SAME, AND DEVICE USING THESE METHODS - A first inert gas (07-23-2009
20090142511Process and apparatus for atmospheric pressure plasma enhanced chemical vapor deposition coating of a substrate - Process and apparatus for atmospheric pressure plasma enhanced chemical vapor deposition coating using a first and second electrode, the second electrode being positioned apart from the first electrode thereby creating a volume space between the first and second electrodes which volume space is covered by a duct sealed to the electrodes. Gas is flowed from the volume space between the first and second electrodes at the same or at a greater rate than the sum of the gaseous coating precursor mixtures of the first and second electrodes.06-04-2009
20090136683METHOD OF PLASMA TREATMENT USING AMPLITUDE-MODULATED RF POWER - A method for processing a substrate by plasma CVD includes: (i) forming a film on a substrate placed on a susceptor by applying RF power between the susceptor and a shower plate in the presence of a film-forming gas in a reactor; and (ii) upon completion of step (i), without unloading the substrate, applying amplitude-modulated RF power between the susceptor and the shower plate in the absence of a film-forming gas but in the presence of a non-film-forming gas to reduce a floating potential of the substrate.05-28-2009
20080317973DIFFUSER SUPPORT - Embodiments of gas distribution apparatus comprise a diffuser support member coupled to a diffuser and moveably disposed through a backing plate. Embodiments of methods of processing a substrate on a substrate receiving surface of a substrate support comprise providing a diffuser in which a diffuser support member supports the diffuser and is moveably disposed through the backing plate.12-25-2008
20090324849METHOD FOR SEALING PORES IN A POROUS SUBSTRATE - Several embodiments of a method for sealing pores on a porous substrate are disclosed. In one embodiment, the method comprises introducing first particles to the surface of the substrate and damaging the surface to decrease the size of the pores on the surface; introducing second particle to the surface; and forming a film on the surface covering the pores, where the film has a dielectric constant of 4 or less.12-31-2009
20080317974Method and Arrangement for Generating and Controlling a Discharge Plasma - Method and arrangement for controlling a discharge plasma in a discharge space (12-25-2008
20080317972METHOD FOR DEPOSITING THIN FILMS BY MIXED PULSED CVD AND ALD - Films are deposited on a substrate by a process in which atomic layer deposition (ALD) is used to deposit one layer of the film and pulsed chemical vapor deposition (CVD) is used to deposit another layer of the film. During the ALD part of the process, a layer is formed by flowing sequential and alternating pulses of mutually reactive reactants that deposit self-limitingly on a substrate. During the pulsed CVD part of the process, another layer is deposited by flowing two CVD reactants into a reaction chamber, with at least a first of the CVD reactants flowed into the reaction chamber in pulses, with those pulses overlapping at least partially with the flow of a second of the CVD reactants. The ALD and CVD parts of the process ca be used to deposit layers with different compositions, thereby forming, e.g., nanolaminate films. Preferably, high quality layers are formed by flowing the second CVD reactant into the reaction chamber for a longer total duration than the first CVD reactant. In some embodiments, the pulses of the third reactant at separated by a duration at least about 1.75 times the length of the pulse. Preferably, less than about 8 monolayers of material are deposited per pulse of the first CVD reactant.12-25-2008
20090208668FORMATION OF CLEAN INTERFACIAL THIN FILM SOLAR CELLS - A “three” chamber design multi-chamber cluster processing system which is used in the fabrication of a solar cell-comprising substrate. The processing system includes at least one PECVD processing chamber configured to deposit a p-doped layer, at least three PECVD processing chambers configured to deposit an i-layer, and at least one PECVD processing chamber configured to deposit an n-doped layer. The processing system also includes at least one central substrate transferring chamber which is typically located substantially equidistant from each of the PECVD processing chambers, and a transfer robot present in the central transferring chamber which is capable of paired transfer of substrates. An apparatus which provides a source of fluorine-comprising reactive species is in communication with each of said PECVD processing chambers.08-20-2009
20090208669Apparatus and method for application of a thin barrier layer onto inner surfaces of wafer containers - A method and apparatus for coating the inner walls of polymer-made wafer containers with a thin silicon dioxide barrier film, which is characterized by good washability and possesses high scratch-resistant and wear-resistant properties. In compliance with requirements of high purity, the barrier layer also protects the surfaces of semiconductor wafers from volatile substances of polymer material of the container walls. The apparatus comprises a base plate and an RF antenna unit that is inserted into the preliminarily sealed and evacuated container. The apparatus is connected to the front side of the container through a standard mechanical interface provided on the facing side of the apparatus. The barrier layer is deposited with the use of a plasma-enhanced chemical-vapor-deposition process as a result of a plasma-chemical reaction in a working gas comprising a mixture of silane with excess oxygen.08-20-2009
20100196627PLASMA PROCESSING METHOD AND COMPUTER STORAGE MEDIUM - According to the present invention, when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to form an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently, it is possible to improve quality of the oxynitride film, resulting in a reduced leakage current, an improved operating speed, and improved NBTI resistance.08-05-2010
20090197014Apparatus and method for coating diamond on work pieces via hot filament chemical vapor deposition - There is a disclosed apparatus for coating diamond on work pieces via hot filament chemical vapor deposition. The apparatus includes a chamber, a pump for pumping air from the chamber, a pressure controller for con trolling the pressure in the chamber, a grid disposed in the chamber, a grid-bias power supply for providing a positive bias to the grid, a holder for carrying the work pieces, a holder-bias power supply for providing a negative bias to the holder, filaments provided between the grid and the carrier, a filament power supply for energizing the filaments to heat up, a programmable temperature controller for controlling the temperature in the chamber and a pipe for transferring reaction gas into the chamber.08-06-2009
20090208670ORGANOMETALLIC COMPOUNDS, PROCESSES FOR THE PREPARATION THEREOF AND METHODS OF USE THEREOF - This invention relates to organometallic compounds having the formula (L08-20-2009
20090246406PLASMA PROCESSING APPARATUS, CHAMBER INTERNAL PART, AND METHOD OF DETECTING LONGEVITY OF CHAMBER INTERNAL PART - A plasma processing apparatus that can accurately detect the longevity of a chamber internal part to eliminate the waste of the replacement of the chamber internal part that has not reached its end of longevity and prevent the occurrence of troubles caused by continuously using the chamber internal part that has reached its end of longevity. In the chamber internal part, at least one longevity detecting elemental layer comprised of an element different from a constituent material of the chamber internal part is buried.10-01-2009
20090252892PROCESSING CHAMBER - A process apparatus for treatment of a substrate comprising a load chamber for loading the substrate, a process chamber for processing the substrate, a sealing plane separating the process chamber from the load chamber and means for vertically moving the substrate from the load chamber to the process chamber, and a method for treating the substrate are provided. The load chamber is located in one of the lower and upper portions of the process apparatus, and the process chamber is located in the other of the lower and upper portions of the process apparatus. The process apparatus and method of the present invention will provide easy maintenance and reduced costs by reducing the number of movements for loading the substrate.10-08-2009
20100178435Methods and systems for manufacturing polycrystalline silicon and silicon-germanium solar cells - The present invention relates to a novel, unconventional methods and systems for the fabrication of silicon on silicon-germanium photovoltaic cell applications. In some embodiments high purity gaseous and/or liquid intermediate compounds of silicon (or silicon germanium) are converted directly to polycrystalline films by a thermal plasma chemical vapor deposition process or by a thermal plasma spraying technique. The intermediate compounds of silicon (or silicon germanium) are injected into the thermal plasma source where temperatures range from 2,000 K to 20,000 K. The compounds dissociate and silicon (or silicon germanium) is deposited onto substrates. Polycrystalline films having densities approaching the bulk value are obtained on cooling. PN junction photovoltaic cells can be directly prepared by spraying, or doped films after heat treatment are subsequently transformed to viable photovoltaic cells having high efficiency, low cost at a high throughput. In some embodiments a roll-to-roll or a cluster-tool type automated, continuous system is provided.07-15-2010
20090274851METHOD OF FORMING A HIGH TRANSPARENT CARBON FILM - A method of forming a transparent hydrocarbon-based polymer film on a substrate by plasma CVD includes: introducing a main gas consisting of a hydrocarbon gas (C11-05-2009
20100178436METHODS AND APPARATUS FOR FORMING DIAMOND-LIKE COATINGS - The invention is an apparatus and method for depositing a coating onto a substrate. The apparatus includes a vacuum chamber with an inlet for supplying a precursor gas to the chamber. The chamber includes a carrier for locating the substrate in the chamber, a first anode having an aperture in which plasma can be formed, and a magnetic field source. The substrate, when located in the carrier, constitutes a first cathode. When a substantially linear magnetic field between the anode and the cathode is formed, the direction of the magnetic field is substantially orthogonal to the surface to be coated and plasma production and deposition takes place substantially within the linear magnetic field.07-15-2010
20090117288VACUUM PLASMA GENERATOR - Workpieces in a vacuum chamber are treated by receiving a mains voltage from a voltage supply network; generating at least one intermediate circuit voltage; generating a first RF signal of a basic frequency, and of a first phase position, from the at least one intermediate circuit voltage; generating a second RF signal of the basic frequency, and of a second phase position, from the at least one intermediate circuit voltage; and coupling the first and the second signal and generating an output signal for the vacuum chamber using a 3 dB coupler.05-07-2009
20100189921PLASMA GENERATING METHOD, PLASMA GENERATING APPARATUS, AND PLASMA PROCESSING APPARATUS - A plasma generating method and apparatus which use plural high-frequency antennas 07-29-2010
20100183825PLASMA ATOMIC LAYER DEPOSITION SYSTEM AND METHOD - An improved gas deposition chamber includes a hollow gas deposition volume formed with a volume expanding top portion and a substantially constant volume cylindrical middle portion. The hollow gas deposition volume may include a volume reducing lower portion. An aerodynamically shaped substrate support chuck is disposed inside gas deposition chamber with a substrate support surface positioned in the constant volume cylindrical middle portion. The volume expanding top portion reduces gas flow velocity between gas input ports and the substrate support surface. The aerodynamic shape of the substrate support chuck reduces drag and helps to promote laminar flow over the substrate support surface. The volume reducing lower portion helps to increase gas flow velocity after the gas has past the substrate support surface. The improved gas deposition chamber is configurable to 200 mm diameter semiconductor wafers using ALD and or PALD coating cycles. An improved coating method includes expanding process gases inside the deposition chamber prior to the process gas reaching surfaces of a substrate being coated. The method further includes compressing the process gases inside the deposition chamber after the process gas has flowed past surfaces of the substrate being coated.07-22-2010
20090017228APPARATUS AND METHOD FOR CENTERING A SUBSTRATE IN A PROCESS CHAMBER - The present invention comprises an apparatus and method for centering a substrate in a process chamber. In one embodiment, the apparatus comprises a substrate support having a support surface adapted to receive the placement of a substrate and a reference axis substantially perpendicular to the support surface, and a plurality of centering members extending above the support surface. Each centering member is biased into a first position and is movable to a second position by interacting with an opposing member. A movement between the first position and the second position thereby causes each centering member to releasably engage with a peripheral edge of the substrate to push the substrate in a direction toward the reference axis.01-15-2009
20090017227Remote Plasma Source for Pre-Treatment of Substrates Prior to Deposition - A plasma processing chamber particularly useful for pre-treating low-k dielectric films and refractory metal films subject to oxidation prior to deposition of other layers. A remote plasma source (RPS) excites a processing gas into a plasma and delivers it through a supply tube to a manifold in back of a showerhead faceplate. The chamber is configured for oxidizing and reducing plasmas in the same or different processes when oxygen and hydrogen are selectively supplied to the RPS. The supply tube and showerhead may be formed of dielectric oxides which may be passivated by a water vapor plasma from the remote plasma source. In one novel process, a protective hydroxide coating is formed on refractory metals by alternating neutral plasmas of hydrogen and oxygen.01-15-2009
20100255216PROCESS AND APPARATUS FOR ATMOSPHERIC PRESSURE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION COATING OF A SUBSTRATE - The invention relates to a process and apparatus for atmospheric pressure plasma enhanced chemical vapor deposition coating using a first electrode (10-07-2010
20100221451METHOD FOR TREATING PLASMA AND/OR COVERING PLASMA OF WORKPIECES UNDER CONTINUOUS ATMOSPHERIC PRESSURE, IN PARTICULAR MATERIAL PLATES OR STRIPS - The present invention provides a method with which a workpiece can be subjected to an atmospheric-pressure plasma treatment and/or plasma discharge on a side facing away from the high-voltage electrodes inducing the plasma discharge.09-02-2010
20130216731CONTROL OF DIFFERENTIAL PRESSURE IN PECVD SYSTEMS - A method and apparatus for manufacturing thin films is described, wherein, in a deposition system comprising an inner non-airtight enclosure for containing at least one substrate, an outer airtight chamber completely surrounding said enclosure, an exhaust operatively connected to both, said inner chamber is kept at a pressure lower than the pressure within said outer enclosure, especially a pressure difference of less than I mbar. The apparatus may exhibit two butterfly vents arranged between inner enclosure, outer chamber and an exhaust for controlling said pressure difference.08-22-2013
20100323125ATOMIC LAYER DEPOSITION APPARATUS AND ATOMIC LAYER DEPOSITION METHOD - An atomic layer deposition apparatus includes: a first chamber which is surrounded by walls including a supply hole for the reactive gas formed thereon; a second chamber which is surrounded by walls including a supply hole for a source gas formed thereon; an antenna array which is provided in the first chamber, the antenna array having a plurality of rod-shaped antenna elements provided in parallel respectively to produce the plasma using the reactive gas; a substrate stage which is provided in the second chamber, the substrate being placed on the substrate stage; and a connecting member which connects the first chamber and the second chamber to supply gas containing reactive gas radical from the first chamber to the second chamber, the reactive gas radical being produced using the antenna array.12-23-2010
20100323124SEALED PLASMA COATINGS - A processing device includes a plurality of walls defining an interior space configured to be exposed to plasma and a surface coating on the interior surface of at least one of the plurality of walls. The surface coating includes pores forming interconnected porosity. The processing device further includes a sealant residing in at least a portion of the pores of the surface coating. In an embodiment, the sealant can be a thermally cured sealant having a cure temperature not greater than about 100° C. In another embodiment, the sealant can be an epoxy sealant having a viscosity of not greater than 500 cP in liquid precursor form. In yet another embodiment, the sealant can be a low shrinkage sealant characterized by a solidification shrinkage of not greater than 8%.12-23-2010
20100209622Thin Film of Aluminum Nitride and Process for Producing the Thin Film of Aluminum Nitride - Flat, thin AlN membranes and methods of their manufacture are made available.08-19-2010
20090291233PROCESS FOR PRODUCING GAS BARRIER FILMS - A process for producing gas barrier films comprises the steps of: applying a pressure of 50 N/m11-26-2009
20090041950METHOD AND SYSTEM FOR IMPROVING SIDEWALL COVERAGE IN A DEPOSITION SYSTEM - Embodiments of a method and system for improving the consistency of a layer or a plurality of layers with a desired profile in a deposition system are generally described herein. Other embodiments may be described and claimed.02-12-2009
20090074983METHODS OF ATOMIC LAYER DEPOSITION USING TITANIUM-BASED PRECURSORS - Methods of forming titanium-containing films by atomic layer deposition are provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula I:03-19-2009
20090074984SUBSTRATE PROCESSING APPARATUS AND COATING METHOD - Contamination of a substrate can be prevented or suppressed. A substrate processing apparatus includes a reaction tube having an inner space divided by a barrier wall into a film forming space and a plasma generating space. When a desired film is formed on a substrate placed inside the reaction tube, first and second processing gases are supplied to the reaction tube through nozzles. On the other hand, when a part of the reaction tube constituting the plasma generating space is coated with a film, second and third processing gases are supplied to the plasma generating space through the nozzle.03-19-2009
20100260947METHOD AND APPARATUS OF PLASMA TREATMENT - The present invention provides a plasma treatment apparatus and a conditioning method capable of performing a conditioning for the whole vacuum chamber. A plasma treatment apparatus according to an embodiment of the present invention is provided with a moving means for moving a substrate holder (10-14-2010
20090286010HIGH THROUGHPUT PROCESSES AND SYSTEMS FOR BARRIER FILM DEPOSITION AND/OR ENCAPSULATION OF OPTOELECTRONIC DEVICES - Processes for simultaneously encapsulating multiple optoelectronic devices and/or depositing a barrier film onto multiple substrates suitable for fabrication of optoelectronic devices thereon include the use of a plasma deposition apparatus having multiple pairs of opposing electrodes for deposition of reactants onto the substrate that is used to form the device or the complete device itself. The processes significantly reduce tact time relative to one at a time batch processing that is currently used for manufacturing optoelectronic devices.11-19-2009
20090162570APPARATUS AND METHOD FOR PROCESSING A SUBSTRATE USING INDUCTIVELY COUPLED PLASMA TECHNOLOGY - The present invention generally provides apparatus and methods for processing a semiconductor substrate. Particularly, the present invention provides an inductively coupled plasma reactor having improved process uniformity. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a process volume configured to process the substrate therein, an adjustable coil assembly coupled to the chamber body outside the process volume, a supporting pedestal disposed in the process volume and configured to support the substrate therein, and a gas injection assembly configured to supply a process gas towards a first process zone and a second process zone independently.06-25-2009
20090169768Substrate processing method and substrate processing apparatus - A substrate can be appropriately oxidized, while oxidation of the substrate can be suppressed.07-02-2009
20090110847Apparatus and Method for Producing Light-Emitting Elements With Organic Compounds - The invention relates to an apparatus and a method for the manufacture of light emitting elements comprising organic compounds. These elements are provided with organic light emitting diodes and can be displays or also lighting elements having such light emitting diodes. It is the object of the invention to reduce the effort for the manufacture with respect to the costs and to the time effort. In this connection, already pretreated substrates are further processed in a continuous vacuum coating plant. An electrode is formed on such a substrate and at least one layer of an organic compound which is suitable for the emission of light should be deposited over said electrode. The deposition should take place with different angular distributions. Shadow masks are used for this purpose. The adaptation of the angular distribution in the deposition can take place by varying the spacing of the shadow mask from the substrate and/or of the base pressure of sources for the deposition of the top electrode and of the organic layer(s).04-30-2009
20080286493Transparent hard coats for optical elements - The present invention related to an improved structure of an optically transparent element that can be used in optical scanners, supermarket scanners, lenses for eyeglasses, etc. The application of oxynitride PECVD films provide good hardness and optical transparency. Such films displaying these physical properties are extremely useful as a scratch resistant coatings in lenses and systems in which an article contacts a transparent surface, such as in scanners and in environments in which intermitent, environmental contact occurs such as in displays for computers and suchlike and in liquid crystal displays, touch displays and compact disks.11-20-2008
20130129938METHOD FOR THE CO-EVAPORATION AND DEPOSITION OF MATERIALS WITH DIFFERING VAPOR PRESSURES - A deposition method that improves the direct vapor deposition process by enabling the vapor deposition from multiple evaporate sources to form new compositions of deposition layers over larger and broader substrate surface areas than heretofore could be covered by a DVD process, including providing layers with varying vapor pressures onto the substrate, as well as columnar thermal barrier over an environmental barrier and the gradual modification of the composition of the environment barrier coating and/or columnar thermal barrier coating.05-23-2013
20100304044Spectrally Selective Coatings And Associated Methods For Minimizing The Effects of Lightning Strikes - A method for reducing structural damage to a substrate resulting from interaction between the substrate and a plasma, the method including the steps of identifying a wavelength at which a spectral radiance of the plasma is at a peak, the wavelength being a function of a temperature of the plasma, preparing a coating capable of imparting to the substrate a threshold electromagnetic reflectivity over a spectral band about the wavelength, and applying the coating to the substrate.12-02-2010
20100310789Method for Preparation of Hybrid Comprising Magnetite Nanoparticles and Carbon Nitride Nanotubes - The present invention discloses a method for preparation of a hybrid comprising magnetite nanoparticles and carbon nitride nanotubes, comprising: preparing carbon nitride nanotubes by plasma chemical vapor deposition (CVD); dissolving the prepared carbon nitride nanotubes in triethyleneglycol to form solution and adding Fe (acetylacetonate)12-09-2010
20100304045METHOD OF AND APPARATUS FOR TREATING OR COATING A SURFACE - The invention relates to a method for treating or coating surfaces by means of a plasma. A carrier gas is thus introduced into at least one physically separate reaction chamber and mixed with the generated plasma beam such that the carrier gas is activated or a particle beam is generated which impinges the surface of a workpiece for treatment or coating independently of the plasma stream.12-02-2010
20100304046PLASMA GENERATOR, PLASMA CONTROL METHOD AND METHOD OF PRODUCING SUBSTRATE - The present invention aims to provide a plasma generator capable of creating a spatially uniform distribution of high-density plasma. This object is achieved by the following construction. Multiple antennas are located on the sidewall of a vacuum chamber, and a RF power source is connected to three or four antennas in parallel via a plate-shaped conductor. The length of the conductor of each antenna is shorter than the quarter wavelength of the induction electromagnetic wave generated within the vacuum chamber. Setting the length of the conductor of the antenna in such a manner prevents the occurrence of a standing wave and thereby maintains the uniformity of the plasma within the vacuum chamber. In addition, the plate-shaped conductor improves the heat-releasing efficiency, which also contributes to the suppression of the impedance.12-02-2010
20130136871COATING OF A POLYMER LAYER USING LOW POWER PULSED PLASMA IN A PLASMA CHAMBER OF A LARGE VOLUME - A method for depositing a polymeric material onto a substrate, said method comprising introducing an organic monomeric material in a gaseous state into a plasma deposition chamber, igniting a glow discharge within said chamber, and applying a high frequency voltage as a pulsed field, at a power of from 0.001 to 500 w/m05-30-2013
20130136872PLASMA PROCESSING IN A CAPACITIVELY-COUPLED REACTOR WITH TRAPEZOIDAL-WAVEFORM EXCITATION - A method is provided for exciting at least one electrode of a capacitively coupled reactive plasma reactor containing a substrate. The electrode is excited by applying a RF voltage with a trapezoidal waveform comprising a ramp-up, a high plateau, a ramp-down and a low plateau. The plasma density can be controlled by adjusting the duration of the ramp-up, the duration of the ramp-down, the amplitude and the repetition rate of the trapezoidal waveform. The ion energy distribution function at the substrate can be controlled by adjusting the amplitude and the relative duration between the high plateau and the low plateau of the trapezoidal waveform.05-30-2013
20100310788METHOD AND SYSTEM FOR CONTINUOUS OR SEMI-CONTINUOUS LASER DEPOSITION - The invention relates to a method for deposition of material by laser evaporation wherein the employed laser is a continuous or semi-continuous laser. Using such a laser, it is possible to evaporate the target material in a controlled manner from a local pool of liquid or fluidized target material at the target surface. The invention also provides a system for executing said method.12-09-2010
20110111136PRECURSOR VAPOR GENERATION AND DELIVERY SYSTEM WITH FILTERS AND FILTER MONITORING SYSTEM - A vapor delivery system for supplying vapor to a chamber in a plasma-enhanced chemical vapor deposition (PECVD) system includes a vapor supply that supplies vapor by vaporizing at least one liquid precursor in a carrier gas. A first path includes a first filter that filters the vapor flowing from the vapor supply to the chamber. At least one second path is parallel to the first path and includes a second filter that filters vapor flowing from the vapor supply to the chamber. A plurality of valves are configured to switch delivery of the vapor to the chamber between the first path and the second path.05-12-2011
20110008550ATOMIC LAYER GROWING APPARATUS AND THIN FILM FORMING METHOD - An atomic layer growing apparatus includes a deposition container, a gas supply unit, and an exhaust unit. In the deposition container, an antenna array and a substrate stage are provided. The antenna array is formed by disposing a plurality of antenna elements in parallel, each of the antenna elements being configured by coating a rod-shaped antenna body with a dielectric material. The antenna array generates plasma using one of an oxidizing gas and a nitriding gas. The substrate is placed on the substrate stage. The gas supply unit alternately supplies the source gas and the oxidizing gas toward the substrate stage from a supply hole made in a sidewall of the deposition container when a film is formed on the substrate. The exhaust unit exhausts the source gas and one of the oxidizing gas and the nitriding gas, which are alternately supplied into the deposition container.01-13-2011
20090035482Plastic wheel-cover painting method using flame plasma surface-treatment - The present invention relates to a process of printing exterior plastic parts of a vehicle, and particularly to a painting process in which a flame plasma surface treatment is applied, thereby replacing the conventional pretreatment and primer process. Preferably, the flame plasma surface treatment uses as variables a gas mixing ratio of air/LPG or air/LNG to be introduced to an exterior plastic injection-molded product, a distance between a plasma source and an exterior plastic injection-molded product, a plasma treatment speed and a mixed amount of gas.02-05-2009
20110033638METHOD AND APPARATUS FOR DEPOSITION ON LARGE AREA SUBSTRATES HAVING REDUCED GAS USAGE - A method and apparatus for processing a substrate is described. The apparatus includes a showerhead assembly in a processing chamber. The showerhead assembly is sized to cover a fraction of the length of the substrate. The showerhead assembly includes a first gas channel on a perimeter thereof and a second gas channel in a center thereof. The perimeter gas channel is configured to flow a first gas toward the substrate to form a gas curtain containing a reduced volume processing region between the showerhead and the substrate. Various thermal and/or deposition processes are performed on the substrate within the region interior of the gas curtain.02-10-2011
20100189922PERMEABLE NANOPARTICLE REFLECTOR - An optically-responsive multilayer reflective article is formed by applying a dilute solution or suspension of metallic nanoparticles to an optically-responsive detection layer. The solution or suspension is allowed to dry to form a semicontinuous liquid- or vapor-permeable light-reflective layer that will permit a liquid or vapor analyte to pass through the light-reflective layer to cause an optically-responsive change in the detection layer in the presence of the analyte.07-29-2010
20110244142NITROGEN DOPED AMORPHOUS CARBON HARDMASK - Embodiments described herein generally relate to the fabrication of integrated circuits and more particularly to nitrogen doped amorphous carbon layers and processes for depositing nitrogen doped amorphous carbon layers on a semiconductor substrate. In one embodiment, a method of forming a nitrogen doped amorphous carbon layer on a substrate is provided. The method comprises positioning a substrate in a substrate processing chamber, introducing a nitrogen containing hydrocarbon source into the processing chamber, introducing a hydrocarbon source into the processing chamber, introducing a plasma-initiating gas into the processing chamber, generating a plasma in the processing chamber, and forming a nitrogen doped amorphous carbon layer on the substrate.10-06-2011
20110076420HIGH EFFICIENCY LOW ENERGY MICROWAVE ION/ELECTRON SOURCE - A microwave charged particle source is provided according to various embodiments of the invention. The microwave charged particle source can include a coaxial antenna for generating microwaves and a dielectric layer surrounding the antenna. The microwave charged particle source can also include a first gas line outside the dielectric layer for providing sputtering gases and/or a second gas line for providing cooling gas in a space between the antenna and dielectric layer. The microwave charged particle source can further include a containment shield partially surrounding the dielectric layer and an extraction grid disposed on or near an aperture in the containment shield. In use, charged particles can be formed with the generated microwaves from sputtering gases. And the charged particles can be accelerated under an electric field created from a voltage applied to the extraction grid. A method for providing microwave charged particle source is also provided.03-31-2011
20100196626GROUND RETURN FOR PLASMA PROCESSES - A method and apparatus for providing an electrically symmetrical ground or return path for electrical current between two electrodes is described. The apparatus includes at least on radio frequency (RF) device coupled to one of the electrodes and between a sidewall and/or a bottom of a processing chamber. The method includes moving one electrode relative to another and realizing a ground return path based on the position of the displaced electrode using one or both of a RF device coupled to a sidewall and the electrode, a RF device coupled to a bottom of the chamber and the electrode, or a combination thereof.08-05-2010
20110086183BARRIER COATING WITH REDUCED PROCESS TIME - The present techniques provide systems and methods for protecting electronic devices such as organic light emitting devices (OLEDs) from adverse environmental effects using a thin film encapsulation with reduced process time. In some embodiments, the process time of forming a graded barrier over the OLED structure may take less than 5 minutes, and may result in substantially similar barrier properties as those of metal and epoxy sealants and/or typical thin film encapsulations. The process time of forming the barrier may be reduced by increasing deposition rates for organic and/or inorganic materials, reducing the thicknesses of organic and/or inorganic layers, and/or varying the number of zones in the barrier.04-14-2011
20100015356IN-LINE FILM FORMING APPARATUS AND MANUFACTURING METHOD OF MAGNETIC RECORDING MEDIUM - An in-line film forming apparatus is provided which prevents uneven processing from occurring when reactive plasma treatment or ion irradiation treatment is performed on a substrate held by a carrier. A carrier (01-21-2010
20120189783PLASMA REACTION METHOD AND PLASMA REACTION DEVICE - A plasma reaction method and a plasma reaction device. The plasma reaction method includes steps of: installing at least one conductive coil set in a closed space; filling a reaction fluid into the closed space; and applying an electric field and/or a magnetic field to the conductive coil set, whereby the surface particles of the conductive coil in the closed space are ionized by the magnetic field or electric field into high-energy electrons, high-energy ions and high-energy neutral atoms to carry out plasma reaction. By means of the plasma reaction method and device, in the closed space, the transformation between electric energy and electric energy, electric energy and magnetic energy, magnetic energy and magnetic energy and electrons of the materials can be more efficiently performed.07-26-2012
20100055347ACTIVATED GAS INJECTOR, FILM DEPOSITION APPARATUS, AND FILM DEPOSITION METHOD - An activated gas injector includes a flow passage defining member partitioned into a gas activation passage and a gas introduction passage by a partition wall; a gas introduction port through which a process gas is introduced into the gas introduction passage; a pair of electrodes to be supplied with electrical power to activate the process gas, wherein the electrodes extend along the partition wall in the gas activation passage; through-holes formed in the partition wall and arranged along a longitudinal direction of the electrodes, wherein the through-holes allow the process gas to flow from the gas introduction passage to the gas activation passage; and gas ejection holes provided in the gas activation passage along the longitudinal direction of the electrodes, wherein the gas ejection holes allow the process gas activated in the gas activation passage to be ejected therefrom.03-04-2010
20090035483APPARATUS FOR DIRECTING PLASMA FLOW TO COAT INTERNAL PASSAGEWAYS - An apparatus for coating surfaces of a workpiece configured to establish a pressure gradient within internal passageways through the workpiece, so that the coating within the internal passageways exhibits intended characteristics, such as those relating to smoothness or hardness. The coating apparatus may include any or all of a number of cooperative systems, including a plasma generation system, a manipulable workpiece support system, an ionization excitation system configured to increase ionization within or around the workpiece, a biasing system for applying a selected voltage pattern to the workpiece, and a two-chamber system that enables the plasma generation to take place at a first selected pressure and the deposition to occur at a second selected pressure.02-05-2009
20100062182Method for Repairing Display Device and Apparatus for Same - An object of the present invention is to provide a method for repairing a display device according to which a wide variety of regions can be repaired in various ways using various materials, as well as an apparatus for the same. The present invention provides a repairing apparatus for repairing a pattern defect on a surface of a substrate in a display device where an electronic circuit pattern having the above described pattern defect is formed, characterized by having a plasma irradiation means for repairing the above described pattern defect through local irradiation of a region including the above described pattern defect with plasma.03-11-2010
20090029066Film forming method for a semiconductor - The present invention is a plasma processing method for forming a film on a substrate, the method including the steps of processing a first material gas with plasma having an electron density W and an electron temperature X, processing a second material gas with plasma having an electron density Y, which is different from the electron density W, and an electron temperature Z, which is different from the electron temperature X, and forming the film on the substrate by reacting the processed first material gas and the processed second material gas.01-29-2009
20100239781METHOD FOR IN-CHAMBER PREPROCESSING IN PLASMA NITRIDATION PROCESSING, PLASMA PROCESSING METHOD, AND PLASMA PROCESSING APPARATUS - Disclosed is an in-chamber preprocessing method for carrying out preprocessing in a chamber prior to carrying out plasma nitridation processing of an oxide film, formed on a substrate, in the chamber. The method includes a step of supplying an oxygen-containing processing gas into the chamber and converting the gas into plasma, thereby generating an oxidizing plasma in the chamber (step 09-23-2010
20110097516PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - Provided is a plasma processing apparatus including: a plasma generator configured to generate plasma, and a conveyor configured to adjust a distance between a substrate and the plasma generator.04-28-2011
20110070380SYSTEMS AND METHODS FOR THIN-FILM DEPOSITION OF METAL OXIDES USING EXCITED NITROGEN-OXYGEN SPECIES - Systems and methods are delineated which, among other things, are for depositing a film on a substrate that is within a reaction chamber. In an exemplary method, the method may comprise applying an atomic layer deposition cycle to the substrate, wherein the cycle may comprise exposing the substrate to a precursor gas for a precursor pulse interval and then removing the precursor gas thereafter, and exposing the substrate to an oxidizer comprising an oxidant gas and a nitrogen-containing species gas for an oxidation pulse interval and then removing the oxidizer thereafter. Aspects of the present invention utilize molecular and excited nitrogen-oxygen radical/ionic species in possible further combination with oxidizers such as ozone. Embodiments of the present invention also include electronic components and systems that include devices fabricated with methods consistent with the present invention.03-24-2011
20110076421VAPOR DEPOSITION REACTOR FOR FORMING THIN FILM ON CURVED SURFACE - A vapor deposition reactor and a method for forming a thin film. The vapor deposition reactor includes first to third portions arranged along an arc of a circle. The first portion includes at least one first injection portion for injecting a material to a recess in the first portion. The second portion is adjacent to the first portion and has a recess communicatively connected to the recess of the first portion. The third portion is adjacent to the second portion and has a recess communicatively connected to the recess of the second portion and an exhaust portion for discharging the material from the vapor deposition reactor.03-31-2011
20100260946Nanostructure arrays and fabrication methods therefor - Nanorings and methods for fabrication thereof, preferably of gold and tungsten, involve deposition on silicon wafer and/or glass substrates using random incidence sputtering deposition and thermal vapor deposition techniques to produce two dimensional tungsten nanotriangle and gold nanoring arrays on the silicon wafer substrates with the size of resulting equilateral tungsten nanotriangles being about 100 nm per side and being spaced about 210 nm from each other, and with the gold nanorings being about 220 nm in diameter, 40 nm wide, 10 nm thick and being spaced about 560 nm from each other.10-14-2010
20090022905RF CHOKE FOR GAS DELIVERY TO AN RF DRIVEN ELECTRODE IN A PLASMA PROCESSING APPARATUS - In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is electrically isolated from the showerhead. The gas feed tube may provide not only process gases, but also cleaning gases from a remote plasma source to the process chamber. The inside of the gas feed tube may remain at either a low RF field or a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead. By feeding the gas through an RF choke, the RF field and the processing gas may be introduced to the processing chamber through a common location and thus simplify the chamber design.01-22-2009
20100086703Vapor Phase Epitaxy System - A vapor phase epitaxy system includes a platen that supports substrates for vapor phase epitaxy and a gas injector. The gas injector injects a first precursor gas into a first region and injects a second precursor gas into a second region. At least one electrode is positioned in the first region so that first precursor gas molecules flow proximate to the electrode. The at least one electrode is positioned to be substantially isolated from a flow of the second precursor gas. A power supply is electrically connected to the at least one electrode. The power supply generates a current that heats the at least one electrode so as to thermally activate at least some of the first precursor gas molecules flowing proximate to the at least one electrode.04-08-2010
20080248217Method for Producing Hose with Sealing Layer - In a method for producing a hose with a sealing layer, a hose body having a resin innermost layer is prepared, a rod-like core member is disposed through a center portion of a hollow interior of a connecting portion of the hose body so as to occupy the center portion, and the plasma gas is fed and distributed in an interior of an innermost layer of the connecting portion to modify an inner surface of the innermost layer. Then, the sealing layer is formed on the inner surface by coating an elastic material for the sealing layer on the inner surface of the connecting portion.10-09-2008
20090317565PLASMA CVD EQUIPMENT - Plasma CVD equipment by which increase of a voltage applied on a board to be processed is suppressed, a board is prevented from being damaged and a yield is improved. In the plasma CVD equipment, a material gas is decomposed by plasma discharge in a chamber which can be depressurized, and a conductive film is formed on a board to be processed. When a cumulative number of times of film forming processes reaches a prescribed value, the inside of the chamber is dry-cleaned to be returned to the initial state. The plasma CVD equipment is provided with an insulator stage whereupon a board to be processed is placed in the chamber; a grounding electrode buried in the stage; a high-frequency electrode provided in the chamber by facing the grounding electrode; a high-frequency power supply for supplying the high-frequency electrode with high-frequency waves for generating plasma; and a fixed capacitor inserted between the grounding electrode and the grounding potential for suppressing the increase of the voltage applied on the board due to deterioration of stage impedance between the grounding electrode and the board as the cumulative number of times of the film forming processes increases from the initial state.12-24-2009
20090311443METHOD OF COATING INNER AND OUTER SURFACES OF PIPES FOR THERMAL SOLAR AND OTHER APPLICATIONS - In accordance with one embodiment of the invention, a workpiece having a smaller cross sectional dimension (e.g., diameter) is centered within a workpiece having a larger cross sectional dimension, with the workpieces being electrically connected. In this embodiment, surfaces of the two workpieces can be coated simultaneously, either with the same coating material or different coating materials. In another embodiment, holes are located along the length of an internal metal tube which functions as a gas distribution injector and anode holder. A ceramic liner may be placed inside the internal metal tube, with a conductive wire within the ceramic liner. The internal metal tube may be biased as a cathode, while the internal wire is biased as an anode. The hollow cathode effect is applied in all spaces directly adjacent to the surface or surfaces being coated. In some applications, different surfaces being coated are biased at different voltages.12-17-2009
20090258162PLASMA PROCESSING APPARATUS AND METHOD - The present invention generally includes a plasma enhanced chemical vapor deposition (PECVD) processing chamber having an RF power source coupled to the backing plate at a location separate from the gas source. By feeding the gas into the processing chamber at a location separate from the RF power, parasitic plasma formation in the gas tubes leading to the processing chamber may be reduced. The gas may be fed to the chamber at a plurality of locations. At each location, the gas may be fed to the processing chamber from the gas source by passing through a remote plasma source as well as an RF choke or RF resistor.10-15-2009
20090162571Method and Device for Producing Process Gases for Vapor Phase Deposition - The invention relates to a method for producing layers on work pieces (06-25-2009
20090110846METHOD OF FABRICATING INKJET PRINTHEAD HAVING PLANAR NOZZLE PLATE - A method of fabricating an inkjet printhead is provided. The method comprises the steps of: (a) providing a partially-fabricated printhead having a first nozzle plate comprised of a first material spanning a plurality of nozzles, the first nozzle plate having a plurality of cavities; (b) filling the cavities with a filler, such that an upper surface of the first nozzle plate and an upper surface of the filler together define a contiguous planar surface; and (c) depositing a second material onto the planar surface to form a second nozzle plate having a planar exterior surface.04-30-2009
20080274298Plant for the Plasma Surface Treatment of an Alveolar Sheet of Plastic Material - The plant is intended for performing the plasma surface treatment of an alveolar sheet (11-06-2008
20080286490Production of a Platinum-Free Chelate Catalyst Material as an Intermediate Product, and Further Processing Thereof to Obtain an Electrocatalytic Coating as a Final Product - A method for preparing a platinum-free chelate catalyst material as an intermediate product for selective electrocatalytic reduction of oxygen includes performing a low-temperature plasma treatment on a powdery form of the transition-metal chelate in a plasma reactor chamber having an inert plasma gas disposed therein. A plasma power, a plasma gas pressure, a plasma initialization and a treatment time of the low-temperature plasma treatment are selected so that molecules of the transition metal chelate are fragmented in the plasma and cross-link in a subsequent chemical reaction so as to form a carbon matrix and retain a basic chelate structure in a surrounding of the transition metal.11-20-2008
20080268171APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION - Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a plasma baffle assembly for receiving a process gas within a plasma-enhanced vapor deposition chamber is provided which includes a plasma baffle plate containing an upper surface to receive a process gas and a lower surface to emit the process gas, a plurality of openings configured to flow the process gas from above the upper surface to below the lower surface, wherein each opening is positioned at a predetermined angle of a vertical axis that is perpendicular to the lower surface, and a conical nose cone on the upper surface. In one example, the openings are slots positioned at a predetermined angle to emit the process gas with a circular flow pattern.10-30-2008
20080268170METHOD AND APPARATUS FOR MAKING DIAMOND-LIKE CARBON FILMS - Ion-assisted plasma enhanced deposition of diamond-like carbon (DLC) films on the surface of photovoltaic solar cells is accomplished with a method and apparatus for controlling ion energy. The quality of DLC layers is fine-tuned by a properly biased system of special electrodes and by exact control of the feed gas mixture compositions. Uniform (with degree of non-uniformity of optical parameters less than 5%) large area (more than 110 cm10-30-2008
20080268172Layer forming method using plasma discharge - A layer forming method is disclosed which relies on reactive gas in a plasma state. The method includes steps of supplying power of not less than 1 W/cm10-30-2008
20100330299PLASMA DEPOSITION OF A THIN FILM - A plasma deposition apparatus and a method of manufacturing a thin film using the same are disclosed. The plasma deposition apparatus includes a reaction chamber inside which a first electrode and a second electrode are installed, a first power supply unit applying a first pulsed RF signal to one of the first and second electrodes, and a second power supply unit applying a second pulsed RF signal to one of the first and second electrodes. The first pulsed RF signal and the second pulsed RF signal are performed based on a predetermined deposition variable.12-30-2010
20100285237NANOLAYER DEPOSITION USING BIAS POWER TREATMENT - A hybrid deposition process of CVD and ALD, called NanoLayer Deposition (NLD) is provided. The NLD process is a cyclic sequential deposition process, comprising introducing a first plurality of precursors to deposit a thin layer with the deposition process not self limiting, followed by introducing a second plurality of precursors for plasma treating the thin deposited layer. The plasma can be isotropic, anisotropic, or a combination of isotropic and anisotropic to optimize the effectiveness of the treatment of the thin deposited layers.11-11-2010
20120135164PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - Provided are a plasma processing apparatus and a plasma processing method, wherein a substrate supporting table is supported such that nonuniformity of heat release is eliminated and maintenance is facilitated. In the plasma CVD apparatus (05-31-2012
20120135163METHOD AND APPARATUS FOR PLASMA INDUCED COATING AT LOW PRESSURE - The invention provides a method for plasma coating at low pressure with a water and oil repellent polymer layer. The method comprises the steps of: 05-31-2012
20110135843Deposited Film Forming Device and Deposited Film Forming Method - In order to form a high-quality Si-based film at high speed, for example, a deposited film forming device according to one aspect of the present invention includes: a chamber; a first electrode arranged in the chamber; and a second electrode arranged in the chamber and spaced a certain distance from the first electrode. The second electrode includes first and second supplying parts. The first supplying part supplies a first material gas and generates hollow cathode discharge. The second supplying part supplies a second material gas higher in decomposition rate than the first material gas.06-09-2011
20110135842METHOD AND SYSTEM FOR PERFORMING DIFFERENT DEPOSITION PROCESSES WITHIN A SINGLE CHAMBER - A method and system for plasma-assisted thin film vapor deposition on a substrate is described. The system includes a process chamber including a first process space having a first volume, a substrate stage coupled to the process chamber and configured to support a substrate and expose the substrate to the first process space, a plasma generation system coupled to the process chamber and configured to generate plasma in at least a portion of the first process space, and a vacuum pumping system coupled to the process chamber and configured to evacuate at least a portion of the first process space. The system further includes a process volume adjustment mechanism coupled to the process chamber and configured to create a second process space that includes at least a part of the first process space and that has a second volume less than the first volume, the substrate being exposed to the second process space.06-09-2011
20100215871METHOD FOR FORMING THIN FILM USING RADICALS GENERATED BY PLASMA - A method for forming a thin film using radicals generated by plasma may include generating radicals of a reactant precursor using plasma; forming a first thin film on a substrate by exposing the substrate to a mixture of the radicals of the reactant precursor and a source precursor; exposing the substrate to the source precursor; and forming a second thin film on the substrate by exposing the substrate to the mixture of the radicals of the reactant precursor and the source precursor. Since the substrate is exposed to the source precursor between the formation of the first thin film and the formation of the second thin film, the rate of deposition may be improved.08-26-2010
20100159156THIN FILM FORMING APPARATUS AND THIN FILM FORMING METHOD - Disclosed is a thin film forming apparatus which is a plasma discharge processing apparatus for performing a plasma discharge processing on the surface of a continuously transported base at or near atmospheric pressure, wherein a reverse flow of the processing gas is prevented and thus a thin film having good quality is formed by a uniform gas flow. The thin film forming apparatus is characterized by having an auxiliary gas discharge means for discharging an auxiliary gas for preventing a reverse flow of the processing gas. Also disclosed are a thin film forming method, and a thin film.06-24-2010
20100159157ROBOTICALLY APPLIED HARDFACING WITH PRE-HEAT - A system and method for the automated or “robotic” application of hardfacing to a surface of a drill bit.06-24-2010
20100196625SHOWERHEAD, SUBSTRATE PROCESSING APPARATUS INCLUDING THE SHOWERHEAD, AND PLASMA SUPPLYING METHOD USING THE SHOWERHEAD - A showerhead includes a first ring having an inner spray port formed therein, a second ring configured to surround the first ring, the second ring being disposed outside the first ring such that the second ring is spaced apart from the first ring, and a connection member for interconnecting the first ring and the second ring. An outer spray port is formed between the first ring and the second ring. The showerhead further includes a third ring disposed in the inner spray port formed in the first ring and a fourth ring disposed in the outer spray port formed between the first ring and the second ring. The third ring has an innermost spray port formed therein, and the fourth ring has an outermost spray port formed at the outside thereof. 08-05-2010
20100068413VAPOR DEPOSITION REACTOR USING PLASMA AND METHOD FOR FORMING THIN FILM USING THE SAME - A vapor deposition reactor may include a first electrode including a first channel and at least one first injection hole connected to the first channel. a second electrode electrically separated from the first electrode, and a power source for applying power between the first electrode and the second electrode to generate plasma from a reactant gas between the first electrode and the second electrode. Also provided is a method for forming thin film using the vapor deposition reactor.03-18-2010
20100068414Substrate processing apparatus and substrate processing method - A substrate processing apparatus includes a transport chamber and a processing chamber that processes substrates. The transport chamber has a first substrate transport member transporting the substrates from the transport chamber to the processing chamber. The processing chamber has a first processing unit which is adjacent to the transport chamber and has a first substrate placing base, a second processing unit which is adjacent to the other side of the transport chamber in the first processing unit and has a second substrate placing base, a second substrate transport member transporting the substrates between the first processing unit and the second processing unit, and a control unit controlling at least the second substrate transport member.03-18-2010
20100068412PROCESS FOR COATING A SUBSTRATE, PLANT FOR IMPLEMENTING THE PROCESS AND FEEDER FOR FEEDING SUCH A PLANT WITH METAL - The invention relates to a coating process for coating at least one side of a running substrate, by vacuum evaporation, with a layer of a sublimable metal or metal alloy, in which said metal or metal alloy is positioned so as to face said side of the substrate in the form of at least two ingots placed in contact with one another, that surface of said ingots facing said side of the substrate being kept parallel to the substrate and at a constant distance from the latter during coating, and also to a coating plant for implementing the process and to a feeder (03-18-2010
20100068411Vacuum treatment method and vacuum treatment apparatus - A vacuum treatment method and a vacuum treatment apparatus are provided in which the SiH03-18-2010
20090202740ORGANOMETALLIC COMPOUNDS, PROCESSES FOR THE PREPARATION THEREOF AND METHODS OF USE THEREOF - This invention relates to organometallic compounds having the formula L08-13-2009
20090197016HOSE WITH SEALING LAYER, DIRECT-CONNECT ASSEMBLY INCLUDING THE SAME AND METHOD OF MANUFACTURING THE SAME - In a hose having a resin layer as an inner layer, a plasma treatment is performed on the inner surface of the inner layer and a connecting portion of an end part of the hose to thereby perform surface modification. Then, a sealing layer made of an elastic material is coated on and bonded to the inner surface of the connecting portion.08-06-2009
20120308739METHODS FOR DEPOSITION OF ALKALINE EARTH METAL FLUORIDE FILMS - Disclosed are thermal and/or plasma-enhanced CVD, ALD, and/or pulse CVD processes to deposit alkaline earth metal fluoride-based films, such as MgF12-06-2012
20100028560MAGNETIC RECORDING MEDIUM MANUFACTURING METHOD AND LAMINATE MANUFACTURING METHOD - [Problems] To have a thin film suitably function even when the thickness of the thin film is reduced.02-04-2010
20100021655 PLASMA ELECTRODE - An improved electrode (01-28-2010
20100021654Plasma-enhanced functionalization of inorganic oxide surfaces - Methods for producing plasma-treated, functionalized inorganic oxide surfaces are provided. The methods include the steps of subjecting an oxide surface to a plasma to create hydroxyl functionalities on the surface and reacting the hydroxyl functionalities with epoxy group-containing molecules in situ in the absence of plasma. Biomolecules may be immobilized on the resulting functionalized surfaces. The methods may be used to treat a variety of oxide surfaces, including glass, quartz, silica and metal oxides.01-28-2010
20120301633METHOD OF PRODUCING GAS BARRIER LAMINATE - A method of producing a gas barrier laminate comprises: the steps of forming an inorganic compound layer on a substrate by vapor-phase film deposition, applying surface roughening treatment to a surface of the inorganic compound layer, and subsequently forming an organic compound layer on the roughened surface of the inorganic compound layer by flash evaporation.11-29-2012
20110064890FILM DEPOSITION METHOD - A film deposition method deposits a film on a surface of a substrate in strip form traveling on a peripheral surface of a cylindrical drum in at least one film deposition compartment around the peripheral surface of the drum. The method disposes previously a differential compartment between one film deposition compartment and a compartment including a wrapping space containing at least one of a first position at which the substrate starts to travel on the drum and a second position at which the substrate separates from the drum, the differential compartments communicating with the compartment including the wrapping space and the film deposition compartment, sets a first pressure of the wrapping space lower than a second pressure of the at least one film deposition compartment and performs film deposition in the film deposition compartment with electric power supplied to the drum.03-17-2011
20100196624ARRANGEMENT - The invention relates in general level to radiation transference techniques as applied for utilisation of material handling. The invention relates to a radiation source arrangement comprising a path of radiation transference, or an improved path of radiation transference, which path comprises a scanner or an improved scanner. The invention also concerns a target material suitable for vaporization and/or ablation. The invention concerns an improved scanner. The invention concerns also to a vacuum vaporization/ablation arrangement that has a radiation source arrangement according to invention. The invention concerns also a target material unit, to be used in coating and/or manufacturing target material.08-05-2010
20110318505METHOD FOR FORMING TANTALUM NITRIDE FILM AND FILM-FORMING APPARATUS FOR FORMING THE SAME - A method for forming a tantalum nitride film, which comprises supplying a gaseous nitrogen atom-containing compound, as a reactant gas and supplying gaseous t-amylimido-tris-(dimethylamide)tantalum, as a gaseous raw material, to the surface of the substrate S to thus form a tantalum nitride film on the surface of the substrate S; and a film-forming apparatus, which comprises a reactant gas supply line L12-29-2011
20120009355METHOD AND APPARATUS FOR STABILIZING A COATING - A method and apparatus for stabilizing an incidental coating in a substrate coating apparatus is provided. The method includes defining interior surfaces of a coating zone in the substrate coating apparatus. The method may include preheating interior surfaces to a local preheat temperature that is approximately equal to a local coating temperature attained by the surfaces during coating of a substrate, at least partially defining the interior surfaces with a compliant fabric, or at least partially defining the interior surfaces with a compliant fabric and preheating the interior surfaces.01-12-2012
20120171390METHODS AND APPARATUS FOR SPUTTERING USING DIRECT CURRENT - An apparatus and methods for plasma-based sputtering deposition using a direct current power supply is disclosed. In one embodiment, a plasma is generated by connecting a plurality of electrodes to a supply of current, and a polarity of voltage applied to each of a plurality of electrodes in the processing chamber is periodically reversed so that at least one of the electrodes sputters material on to the substrate. And an amount of power that is applied to at least one of the plurality of electrodes is modulated so as to deposit the material on the stationary substrate with a desired characteristic. In some embodiments, the substrate is statically disposed in the chamber during processing. And many embodiments utilize feedback indicative of the state of the deposition to modulate the amount of power applied to one or more electrodes.07-05-2012
20120003395METHOD OF FABRICATING AN ELECTROCHEMICAL DEVICE USING ULTRAFAST PULSED LASER DEPOSITION - A method of fabricating a multi-layered thin film electrochemical device is provided. The method comprises: providing a first target material in a chamber; providing a substrate in the chamber; emitting a first intermittent laser beam directed at the first target material to generate a first plasma, wherein each pulse of the first intermittent laser beam has a pulse duration of about 20 fs to about 500 ps; depositing the first plasma on the substrate to form a first thin film; providing a second target material in the chamber; emitting a second intermittent laser beam directed at the second target material to generate a second plasma, wherein each pulse of the second intermittent laser beam has a pulse duration of about 20 fs to about 500 ps; and depositing the second plasma on or above the first thin film to form a second thin film.01-05-2012
20120045590APPARATUS AND METHOD FOR PLASMA TREATMENT OF CONTAINERS - An apparatus (02-23-2012
20120003396APPARATUS AND METHOD FOR ATOMIC LAYER DEPOSITION - Apparatus for atomic layer deposition on a surface of a substrate includes a precursor injector head. The precursor injector head includes a precursor supply and a deposition space that in use is bounded by the precursor injector head and the substrate surface. The precursor injector head is arranged for injecting a precursor gas from the precursor supply into the deposition space for contacting the substrate surface. The apparatus is arranged for relative motion between the deposition space and the substrate in a plane of the substrate surface. The apparatus is provided with a confining structure arranged for confining the injected precursor gas to the deposition space adjacent to the substrate surface.01-05-2012
20120207948ATOMIC LAYER DEPOSITION USING RADICALS OF GAS MIXTURE - Performing atomic layer deposition (ALD) using radicals of a mixture of nitrogen compounds to increase the deposition rate of a layer deposited on a substrate. A mixture of nitrogen compound gases is injected into a radical reactor. Plasma of the compound gas is generated by applying voltage across two electrodes in the radical reactor to generate radicals of the nitrogen compound gases. The radicals are injected onto the surface of a substrate previously injected with source precursor. The radicals function as a reactant precursor and deposit a layer of material on the substrate.08-16-2012
20120045589Amidate Precursors For Depositing Metal Containing Films - Volatile metal amidate metal complexes are exemplified by bis(N-(tert-butyl)ethylamidate)bis(ethylmethylamido) titanium; (N-(tert-butyl)(tert-butyl)amidate)tris(ethylmethylamido) titanium; bis(N-(tert-butyl)(tert-butyl)amidate)bis(dimethylamido) titanium and (N-(tert-butyl)(tert-butyl)amidate)tris(dimethylamido) titanium. The term “volatile” referes to any precursor of this invention having vapor pressure above 0.5 torr at temperature less than 200° C. Metal-containing film depositions using these metal amidate ligands are also described.02-23-2012
20110081502METHOD OF MAKING INORGANIC OR INORGANIC/ORGANIC HYBRID BARRIER FILMS - A method for forming an inorganic or hybrid organic/inorganic barrier layer on a substrate, comprising condensing a vaporized metal alkoxide to form a layer atop the substrate, and contacting the condensed metal alkoxide layer with water to cure the layer is provided.04-07-2011
20120058281METHODS FOR FORMING LOW MOISTURE DIELECTRIC FILMS - A method for forming a pre-metal dielectric (PMD) layer or an inter-metal dielectric (IMD) layer over a substrate includes placing the substrate in a chemical vapor deposition (CVD) process chamber and forming a first oxide layer over the substrate in the CVD process chamber. The first oxide layer is formed using a thermal CVD process at a temperature of about 450° C. or less and a sub-atmospheric pressure. The method also includes forming a second oxide layer over the first oxide layer in the CVD process chamber. The second oxide layer is formed using a plasma enhanced chemical vapor deposition (PECVD) process at a temperature of about 450° C. or less and a sub-atmospheric pressure. The substrate remains in the CVD process chamber during formation of the first oxide layer and the second oxide layer.03-08-2012
20100279028METHODS AND ARRANGEMENTS FOR MANAGING PLASMA CONFINEMENT - A method for confining plasma within a plasma processing chamber while processing a substrate is provided. The method includes igniting the plasma within a plasma generating area, wherein the plasma generating area is surrounded by a set of confinement rings. The method also includes providing a chamber wall outside of the set of confinement rings. The method further includes providing a dielectric liner electrode arrangement positioned between the chamber wall and the set of confinement rings, wherein the dielectric liner electrode arrangement having an electrode encapsulated within a dielectric liner, the dielectric liner electrode arrangement being coupled with the chamber wall to create a modified chamber wall. The method yet also includes providing a parallel LC circuit arrangement, the parallel LC circuit arrangement being coupled between the dielectric liner electrode arrangement and the chamber wall.11-04-2010
20090117289Method and apparatus for deposition of thin film materials for energy storage devices - The present invention is a method and apparatus for applying coatings in a rarefied gaseous medium. A cold cathode electron gun is used to generate an electron beam, which is directed to a crucible containing initial solid materials in a vacuum chamber, thus generating an initial solid material vapor. Nitrogen reaction gas is bled into the vacuum chamber, and ionization of the nitrogen gas in high frequency discharge. Subsequent interaction of initial material vapor with nitrogen ions and atoms results in generation of solid product heating of the substrate. Condensation of the vapor on the surface of substrate generates a thin film of solid electrode or electrolyte. The resulting rate of deposition of thin film of vitreous solid electrolyte and LiPon solid electrolyte is substantially higher than can be achieved with a magnetron sputtering process.05-07-2009
20090311442METHOD FOR PRE-TREATING FIBRE REINFORCED COMPOSITE PLASTIC MATERIALS PRIOR TO PAINTING AND METHOD FOR APPLYING A PAINTING LAYER ON FIBRE REINFORCED COMPOSITE PLASTIC MATERIALS - The invention relates to a method for pre-treating fibre reinforced composite plastic materials prior to painting, wherein the materials are subjected to a low pressure cold vacuum gas plasma treatment without preheating the materials. The invention further relates to a method for applying a painting layer on a fibre reinforced composite plastic material, wherein the method comprises the steps of pre-treating the material using a method according to any one of the preceding claims, and subsequently applying the painting layer to the pre-treated material.12-17-2009
20110104400METHOD FOR DEPOSITING AN AMORPHOUS CARBON FILM WITH IMPROVED DENSITY AND STEP COVERAGE - A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.05-05-2011
20110104399METHOD OF REMOVING CONTAMINATION FROM A REACTOR - The present invention provides a method for removing metal and/or metal oxide contamination from the interior of a vacuum coating reactor, the method comprising the steps of: a) performing an idle coating step by depositing a coating layer, wherein the coating layer comprises silicon; b) at least partly removing the deposited coating layer. The method according to the invention is particularly suitable for cleaning reactors in the context of solar cell manufacturing. The method is time saving and cost saving.05-05-2011
20100092695PROCESS FOR IMPROVING THE ADHESION OF CARBON FIBRES WITH REGARD TO AN ORGANIC MATRIX - The present invention relates to a process which makes it possible to improve the adhesion of carbon fibres with regard to an organic matrix forming, with these fibres, a composite material, this composite material being obtained by bringing the fibres into contact with a resin which can be cured by chain polymerization, followed by polymerization of the resin, which process consists in coating the surface of the carbon fibres, before these fibres are brought into contact with the resin, with a polymer film which comprises functional groups capable of acting as chain transfer agents during the polymerization of said resin.04-15-2010
20090202742ORGANOMETALLIC PRECURSOR COMPOUNDS - This invention relates to organometallic precursor compounds represented by the formula (L)M(L′)08-13-2009
20090130336COATING APPARATUS - A coating apparatus (05-21-2009
20090130335PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, DIELECTRIC WINDOW USED THEREIN, AND MANUFACTURING METHOD OF SUCH A DIELECTRIC WINDOW - A method for performing plasma doping which is high in uniformity. A prescribed gas is introduced into a vacuum container from gas supply apparatus while being exhausted through an exhaust hole by a turbomolecular pump as an exhaust apparatus. The pressure in the vacuum container is kept at a prescribed value by a pressure regulating valve. High-frequency power of 13.56 MHz is supplied from a high-frequency power source to a coil which is disposed close to a dielectric window which is opposed to a sample electrode, whereby induction-coupled plasma is generated in the vacuum container. The dielectric window is composed of plural dielectric plates, and grooves are formed in at least one surface of at least two dielectric plates opposed to each other. Gas passages are formed by the grooves and a flat surface(s) opposed to the grooves, and gas flow-out holes which are formed in the dielectric plate that is closest to the sample electrode communicate with the grooves inside the dielectric window. The flow rates of gases that are introduced through the gas flow-out holes and the gas flow-out holes, respectively, can be controlled independently of each other, whereby the uniformity of processing can be increased.05-21-2009
20100247804BIASABLE COOLING PEDESTAL - In some embodiments, a method for cooling a substrate upon a biasable cooling pedestal for supporting a substrate during deposition within a plasma vapor deposition chamber may include a supplying a low pressure inert gas from the shaft of a liquid-chilled pedestal to flow through one or more channels within grooved a metal substrate support and a liquid-chilled body. By maintaining a cooling gas supply at a pressure well below that which may displace the weight of the substrate, the gas may enable even heat transfer between the cooling pedestal and the substrate to cool the substrate during deposition without the use of electrical or mechanical mechanisms for clamping the substrate in place.09-30-2010
20110183083PROCESS AND INSTALLATION FOR DEPOSITING FILMS ONTO A SUBSTRATE - A process for depositing a film onto a substrate (07-28-2011
20120164352METHOD FOR PRODUCING COMPOSITE AND THE COMPOSITE - The present invention is a method for producing a composite including a matrix and a dispersed material dispersed in the matrix. The method includes introducing a raw material for dispersed material which constitutes a dispersed material into a fluid including a melt of a raw material for matrix which constitutes a matrix or a solution containing a raw material for matrix by a vapor deposition method, to obtain a composite.06-28-2012
20120213946Doping Control by ALD Surface Functionalization - Systems and methods for producing a material of desired thickness. Deposition techniques such as atomic layer deposition are alter to control the thickness of deposited material. A funtionalization species inhibits the deposition reaction.08-23-2012
20120213947DEPOSITING THIN LAYER OF MATERIAL ON PERMEABLE SUBSTRATE - Embodiments relate to depositing a layer of material on a permeable substrate by passing the permeable substrate between a set of reactors. The reactors may inject source precursor, reactant precursor, purge gas or a combination thereof onto the permeable substrate as the permeable substrate passes between the reactors. Part of the gas injected by a reactor penetrates the permeable substrate and is discharged by the other reactor. The remaining gas injected by the reactor moves in parallel to the surface of the permeable substrate and is discharged via an exhaust portion formed on the same reactor.08-23-2012
20100173097MARINE ANTIFOULANT COATING - A protective coating applied to the underwater portion of a marine vessel operable to inhibit the growth of marine foulants. The coating comprises a polymer, a marine biocide, a preservative, and optionally an antimicrobial agent. In certain embodiments, the marine biocide, preservative, and optional antimicrobial agent are chemically bonded with the polymer thereby significantly reducing the ability of the biocide, preservative, and antimicrobial agent to leach from the coating into the surrounding environment.07-08-2010
20100047472FILM FORMING METHOD - The present invention relates to a method of forming a metal-nitride film onto a surface of an object to be processed in a processing container in which a vacuum can be created. The method of the invention includes: a step of continuously supplying an inert gas into a processing container set at a high film-forming temperature; and a step of intermittently supplying a metal-source gas into the processing container, during the step of continuously supplying the inert gas. During the step of intermittently supplying the metal-source gas, a nitrogen-including reduction gas is supplied into the processing container at the same time that the metal-source gas is supplied, during a supply term of the metal-source gas. The nitrogen-including reduction gas is also supplied into the processing container for a term shorter than a non-supply term of the metal-source gas, during the non-supply term of the metal-source gas. A film thickness of the metal-nitride film formed during the one supply term of the metal-source gas is not more than 60 nm. According to the invention, although the film-forming process is conducted at a relatively high temperature, a metal-nitride film can be deposited whose chlorine density is low, whose resistivity is low, and in which fewer cracks may be generated.02-25-2010
20120315404APPARATUS FOR THERMAL AND PLASMA ENHANCED VAPOR DEPOSITION AND METHOD OF OPERATING - A method for vapor deposition on a substrate in a vapor deposition system having a process space separated from a transfer space. The method disposes a substrate in a process space of a processing system that is vacuum isolated from a transfer space of the processing system, processes the substrate at either of a first position or a second position in the process space while maintaining vacuum isolation from the transfer space by way of a movement accommodating sealing material, and deposits a material on the substrate at either the first position or the second position.12-13-2012
20120177845HIGH MOLECULAR WEIGHT ALKYL-ALLYL COBALTTRICARBONYL COMPLEXES AND USE THEREOF FOR PREPARING DIELECTRIC THIN FILMS - A method for forming a cobalt-containing thin film by a vapor deposition process is provided. The method comprises using at least one precursor corresponding in structure to Formula (I); wherein R07-12-2012
20120237696FLUID DISTRIBUTION MEMBERS AND/OR ASSEMBLIES - A fluid distribution member assembly for use in a substrate processing system includes a fluid distribution member having a central portion and a perimeter portion. The fluid distribution member defines at least one slot formed there-through and the at least one slot extends along a non-radial path configured to allow the central portion to expand and rotate with respect to the perimeter portion.09-20-2012
20100009098ATMOSPHERIC PRESSURE PLASMA ELECTRODE - An improved electrode useful for modifying a substrate using corona discharge dielectric barrier discharge or glow discharge plasma treatment or coating a substrate using plasma enhanced chemical vapor deposition under atmospheric or near atmospheric pressure conditions, the electrode having a body defining a cavity therein, the body having at least one inlet passageway there through in gaseous communication with the cavity so that a gas mixture can be flowed into the cavity by way of the at least one inlet passageway, the electrode having at least one outlet passageway there through in gaseous communication with the cavity so that a gas that is flowed into the cavity can flow out of the cavity by way of the at least one outlet passageway, the at least one outlet passageway being a slot. The improvement is to position a porous body in the cavity sealed to the wall of the cavity adjacent to the outlet passageway so that a gas that is flowed into the cavity will pass through the porous body before flowing through the outlet passageway.01-14-2010
20100009097Deposition Apparatus and Deposition Method Using the Same - A deposition apparatus includes a gas inflow tube, a plasma electrode, a substrate support functioning as an opposite electrode to the plasma electrode and mounting a substrate thereon, a plasma connector terminal connected to the plasma electrode, a first voltage application unit connected to the plasma connector terminal to apply a voltage thereto in a continuous mode, and a second voltage application unit connected to the plasma connector terminal to apply a voltage thereto in a pulse mode. The voltage applied by the first voltage application unit is an RF voltage of about 13.56 MHz, and the voltage applied by the second voltage application unit is a VHF voltage ranged from about 27 MHz to about 100 MHz.01-14-2010
20100009096VACUUM PROCESSING APPARATUS AND DEPOSITION METHOD USING THE VACUUM PROCESSING APPARATUS - A vacuum processing apparatus is provided, in which a deposition characteristic is easily adjusted, and occurrence of difference in deposition characteristic between deposition chambers can be suppressed, and reduction in equipment cost can be achieved, and a deposition method using the vacuum processing apparatus is provided. The vacuum processing apparatus is characterized by having a plurality of discharge electrodes (01-14-2010
20100009095Method and Apparatus for Producing a Coating on a Substrate - The invention is directed toward the use of an atomizer to inject a coating material typically in the form of a liquid/solid particulate slurry into a sub-atmospheric pressure plasma to generate a high flux of excited coating forming material that permits the rapid deposition of a composite coating onto a substrate. The use of plasma discharges at reduced pressures results in the more efficient consumption of process precursors and gases, a reduced risk of explosion compared to atmospheric pressure processes and facilitates the removal of volatile components from the deposited composite coatings prior to their use.01-14-2010
20090061108COMBINATORIAL PROCESS SYSTEM - A combinatorial processing chamber is provided. The combinatorial processing chamber is configured to isolate a radial portion of a rotatable substrate support, which in turn is configured to support a substrate. The chamber includes a plurality of clusters process heads in one embodiment. An insert having a base plate disposed between the substrate support and the process heads defines a confinement region for a deposition process in one embodiment. The base plate has an opening to enable access of the deposition material to the substrate. Through rotation of the substrate and movement of the opening, multiple regions of the substrate are accessible for performing combinatorial processing on a single substrate.03-05-2009
20120263887TECHNIQUE AND APPARATUS FOR ION-ASSISTED ATOMIC LAYER DEPOSITION - An apparatus for depositing a coating may comprise a first processing chamber configured to deposit a first reactant as a reactant layer on a substrate during a first time period. A second processing chamber may be configured to direct ions incident on the substrate at a second time and configured to deposit a second reactant on the substrate during a second time period, wherein the second reactant is configured to react with the reactant layer.10-18-2012
20120258260METHOD AND DEVICE FOR POLARIZING A DBD ELECTRODE - The invention relates to a device for treating the surface of a substrate by means of dielectric barrier discharge for generating a filamentary plasma, including a reaction chamber comprising a mixture having a composition such that, when in contact with the plasma, the mixture decomposes and generates species capable of deposition in the form of a layer mostly or totally on the substrate, wherein at least two electrodes area provided in said chamber, with one electrode being subjected to a high AC voltage, and are arranged on either side of the substrate, at least one dielectric barrier (DBD) arranged between said at least two electrodes, and a THT/HF transformer comprising a secondary circuit, in which a direct current (DC) power source is provided in series in the secondary circuit such that the chemical species generated in the plasma in the form of electrically positive or negative ions are selectively attracted by the target substrate inserted in the reaction chamber and arranged between said at least two electrodes, and repelled by electrodes having a corresponding charge.10-11-2012
20120082802POWER LOADING SUBSTRATES TO REDUCE PARTICLE CONTAMINATION - A method for preventing particle contamination within a processing chamber is disclosed. Preheating the substrate within the processing chamber may cause a thermophoresis effect so that particles within the chamber that are not adhered to a surface may not come to rest on the substrate. One method to increase the substrate temperature is to plasma load the substrate. Plasma loading comprises providing an inert gas plasma to the substrate to heat the substrate. Another method to increase the substrate temperature is high pressure loading the substrate. High pressure loading comprises heating the substrate while increasing the chamber pressure to between about 1 Torr and about 10 Torr. By rapidly increasing the substrate temperature within the processing chamber prior to substrate processing, particle contamination is less likely to occur.04-05-2012
20120231181INSULATION COVERAGE OF CVD ELECTRODE - Embodiments of the present invention relate to apparatus and methods for preventing arcing between a RF hot chamber components and grounded chamber body. One embodiment of the present invention provides an insulation cover for using in a plasma processing chamber. The insulation cover comprises a frame having an inner window for accommodating a gas distribution showerhead therein. The frame has an L-shaped cross section and configured to shield both a vertical portion and a horizontal portion of a chamber component from the gas distribution showerhead.09-13-2012
20080299326PLASMA CVD APPARATUS HAVING NON-METAL SUSCEPTOR - A plasma CVD apparatus includes: a cooling susceptor for placing a substrate thereon and serving as an electrode; and a shower plate for introducing gas toward the susceptor via multiple throughholes formed therein. The shower plate serves as an electrode and is disposed in parallel to the susceptor. The cooling susceptor is made of a ceramic material provided with a cooling fluid flow path for passing a cooling fluid therethrough.12-04-2008
20110003087METHOD AND APPARATUS FOR GENERATING PLASMA - A reaction chamber of a reactor for coating or treating a substrate by an atomic layer deposition process (ALD) by exposing the substrate to alternately repeated surface reactions of two or more gas-phase reactants. The reaction chamber is configured to generate capacitively coupled plasma and comprises a reaction space within said reaction chamber, a first inlet to guide gases into the reaction chamber and an outlet to lead gases out of the reaction chamber. The reaction chamber is configured to lead the two or more reactants into the reaction chamber such that the two or more reactants may flow through the reaction space across the substrate in a direction essentially parallel to the inner surface of the lower wall.01-06-2011
20110039036REMOTE NON-THERMAL ATMOSPHERIC PLASMA TREATMENT OF TEMPERATURE SENSITIVE PARTICULATE MATERIALS AND APPARATUS THEREFORE - The present invention relates to a novel process for the remote plasma surface treatment of substrate particles at atmospheric pressure. The invention is motivated by the urge to overcome major drawbacks of particle treatment in low pressure plasmas and in-situ particle treatment at atmospheric pressure. The former requires complex and mostly expensive vacuum installations and vacuum locks usually prohibiting continuous processing. Independent of the system pressure, in-situ plasma treatment causes particle charging and therefore undesirable interaction with the electric field of the discharge, which is seen to contribute to the process of reactor clogging. Additionally, the filamentary discharges modes of atmospheric pressure plasmas are inflicted with inhomogeneous surface treatment. Furthermore, short radical lifetimes at elevated pressures complicate a remote plasma treatment approach as widely used in low pressure applications. The key-element of the invention is that by reducing the dimension of the atmospheric discharge arrangement to the micrometer range, transonic flow conditions can be achieved in the discharge zone while maintaining moderate flow rates. The resulting superimposition of high drift velocity in the gas flow and the inherent diffusion movement is to prolong the displacement distance of activated species, thus making a remote plasma treatment of substrate particles feasible and economically interesting. The circumferential arrangement of e.g. micro discharge channels around the treatment zone of variable length allows a remote plasma treatment independently of the discharge mode and benefits additionally from the aerodynamic focusing of a particle-gas stream to the centre, reducing reactor clogging. Furthermore, taking advantage of non-thermal discharges, there is no restriction of the concept of the outlined invention in the material properties of the particulate solids especially not with regard to the treatment of temperature sensitive materials as often encountered in polymer or pharmaceutical industries. In conclusion, atmospheric pressure plasma treatment close to ambient gas temperature as well as continuous processing is a specialty of the invention disclosed here.02-17-2011
20110212276METHOD AND DEVICE FOR APPLYING OR EMBEDDING PARTICLES ONTO OR INTO A LAYER APPLIED BY PLASMA COATING - A method for applying or embedding nanoparticles or microparticles of any substance in a defined manner onto or into a layer to be applied to a substrate surface by plasma coating before, during or after the plasma coating operation in a magnetron or plasmatron. The particles are introduced from the outside into the vacuum chamber of the magnetron or plasmatron via at least one pressure stage. The particles are spatially distributed in the plasma space between the target and the substrate. The particles in the plasma space are preferably exposed to an electric field generating a movement of the particles toward the substrate. It is advantageous for this purpose if the particles are electrically charged before being introduced into the plasma space.09-01-2011
20110236599Plasma processing including asymmetrically grounding a susceptor - An asymmetrically grounded susceptor used in a plasma processing chamber for chemical vapor deposition onto large rectangular panels supported on and grounded by the susceptor. A plurality of grounding straps are connected between the periphery of the susceptor to the grounded vacuum chamber to shorten the grounding paths for RF electrons. Flexible straps allow the susceptor to vertically move. The straps provide a conductance to ground which is asymmetric around the periphery. The straps may be evenly spaced but have different thicknesses or different shapes or be removed from available grounding point and hence provide different RF conductances. The asymmetry is selected to improve the deposition uniformity and other qualities of the PECVD deposited film.09-29-2011
20110236598FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER READABLE STORAGE MEDIUM - In an disclosed film deposition method, after a film deposition-alteration step is carried out that includes a film deposition process where a Si containing gas is adsorbed on a wafer W and the adsorbed Si containing gas on the wafer is oxidized by supplying an O09-29-2011
20120321817BIS-KETOIMINATE COPPER PRECURSORS FOR DEPOSITION OF COPPER-CONTAINING FILMS - Disclosed are processes for the use of bis-ketoiminate copper precursors for the deposition of copper-containing films via Plasma Enhanced Atomic Layer Deposition (PEALD) or Plasma Enhanced Chemical Vapor Deposition (PECVD).12-20-2012
20120276305ATOMIC LAYER DEPOSITION OF METAL PHOSPHATES AND LITHIUM SILICATES - The present application relates to atomic layer deposition (ALD) processes for producing metal phosphates such as titanium phosphate, aluminum phosphate and lithium phosphate, as well as to ALD processes for depositing lithium silicates.11-01-2012
20100178437Apparatus for Generating Gas Having Extremely Low Oxygen Concentration, Processing System and Thin Film Depositing Method Therewith, and Inert Gas Generated as Such - A gas, which has extremely low oxygen and water content without particles for industrial use and is effective in processes including an oxidation preventing step, can be supplied in a large quantity. An apparatus for generating such gas having extremely low oxygen/water content is provided with an oxygen molecule discharging apparatus (07-15-2010
20120100311APPARATUS FOR FORMING DEPOSITED FILM AND METHOD FOR FORMING DEPOSITED FILM - First and second electrodes are provided in a chamber. The second electrode includes a first part supplying a first gas to a space between the first electrode and the second electrode, a plurality of second parts supplying a second gas to the space, a first supply path of the first gas connected to the first part, and a second supply path of the second gas connected to the second parts. The second supply path includes a main part with a first inlet of the second gas, and a branch part including a plurality of gas flow paths with a second inlet of the second gas. A number of the second parts are connected to each of the gas flow paths. The main part and the branch part are structured so that the second material gas does not flow into the second parts from the first inlet as a straight flow.04-26-2012
20120100310COATING DEVICE AND COATING METHOD - A coating installation containing at least one recipient which can be evacuated and which is adapted to accommodate a substrate, at least one gas supply device which is used to introduce at least one gaseous precursor into the recipient and at least one heatable activation element which has a definable longitudinal extension and which is fastened by means of at least one associated mechanical fastening device to be virtually immobile relative to the recipient. In a corresponding method, an electric current can be supplied to the activation element via at least two contact elements and at least one of the contact elements is designed to contact the activation element in alternating contact points.04-26-2012
20120100309PLASMA TREATMENT APPARATUS AND PLASMA CVD APPARATUS - A plasma treatment apparatus includes a treatment chamber covered with a chamber wall, where an upper electrode faces a lower electrode; and a line chamber separated from the treatment chamber by the upper electrode and an insulator, covered with the chamber wall, and connected to a first gas diffusion chamber between a dispersion plate and a shower plate. The first gas diffusion chamber is connected to a second gas diffusion chamber between the dispersion plate and the upper electrode. The second gas diffusion chamber is connected to a first gas pipe in the upper electrode. The upper electrode and the chamber wall are provided on the same axis. The dispersion plate includes a center portion with no gas hole and a peripheral portion with plural gas holes. The center portion faces a gas introduction port of the first gas pipe, connected to an electrode plane of the upper electrode.04-26-2012
20120100308TERNARY METAL ALLOYS WITH TUNABLE STOICHIOMETRIES - Methods and equipment for forming ternary metal alloys are provided. In some embodiments, TaCN thin films are deposited by exposing a substrate to alternating pulses of an organometallic tantalum precursor comprising nitrogen and carbon and hydrogen plasma. The stoichiometry of the film is tuned from carbon rich to nitrogen rich by adjusting the plasma parameters, particularly the plasma power and duration. In this way, films with varied characteristics can be formed from the same precursor. For example, both n-type and p-type materials can be deposited in the same module using the same precursor.04-26-2012
20120100307Shower Plate Having Different Aperture Dimensions and/or Distributions - A shower plate is adapted to be attached to the showerhead and includes a front surface adapted to face the susceptor; and a rear surface opposite to the front surface. The shower plate has multiple apertures each extending from the rear surface to the front surface for passing gas therethrough in this direction, and the shower plate has at least one quadrant section defined by radii, wherein the one quadrant section has an opening ratio of a total volume of openings of all the apertures distributed in the section to a total volume of the one quadrant section, which opening ratio is substantially smaller than an opening ratio of another quadrant section of the shower plate.04-26-2012
20100055345HIGH DENSITY HELICON PLASMA SOURCE FOR WIDE RIBBON ION BEAM GENERATION - An ion source, capable of generating high density wide ribbon ion beam, utilizing one or more helicon plasma sources is disclosed. In addition to the helicon plasma source(s), the ion source also includes a diffusion chamber. The diffusion chamber has an extraction aperture oriented along the same axis as the dielectric cylinder of the helicon plasma source. In one embodiment, dual helicon plasma sources, located on opposing ends of the diffusion chamber are used to create a more uniform extracted ion beam. In a further embodiment, a multicusp magnetic field is used to further improve the uniformity of the extracted ion beam.03-04-2010
20100166979Deposition Apparatus and Substrate Manufacturing Method - A deposition apparatus includes a vacuum chamber, a plasma gun adapted to emit a plasma onto a deposition material accommodated in the vacuum chamber, and a discharge gas supply unit adapted to supply a discharge gas to the plasma gun. The deposition apparatus comprises a mass flow controller adapted to change a flow rate of the discharge gas, and a control circuit which is connected to the mass flow controller and adapted to control, the change in flow rate by the mass flow controller, based on a predetermined setting.07-01-2010
20100166980INLINE VACUUM PROCESSING APPARATUS, METHOD OF CONTROLLING THE SAME, AND INFORMATION RECORDING MEDIUM MANUFACTURING METHOD - An inline vacuum processing apparatus includes a deposition unit, a process execution unit, a determination unit, and a control unit. The deposition unit causes one deposition chamber of a first deposition chamber and a second deposition chamber to execute a deposition process. The process execution unit causes the other deposition chamber to execute a process necessary for the deposition process. The determination unit measures the number of substrates processed in one deposition chamber and determines whether all substrates included in a first lot have undergone the deposition process. The control unit switches, based on a determination result from the determination unit, a process to be executed in each of the first deposition chamber and the second deposition chamber.07-01-2010
20130011579Metal-Enolate Precursors For Depositing Metal-Containing Films - Organometallic compounds suitable for use as vapor phase deposition precursors for metal-containing films are provided. Methods of depositing metal-containing films using certain organometallic precursors are also provided. Such metal-containing films are particularly useful in the manufacture of electronic devices.01-10-2013
20130011578METHOD AND APPARATUS FOR APPLYING A COATING AT A HIGH RATE ONTO NON-LINE-OF-SIGHT REGIONS OF A SUBSTRATE - The present invention provides for a method and apparatus for the directed vapor deposition (DVD) on non-line of sight (NLOS) portions of a substrate. The method and apparatus includes evaporating a first material for deposition on to the substrate, the evaporating generating a plurality of vapor molecules. The method and apparatus therein provides for the insertion of a carrier gas and the direction of the vapor molecules to be deposited in NLOS regions of the substrate. One embodiment utilizes plasma activation to ionize the vapor particles and bias the substrate to attract the charged vapor molecules onto the NLOS portion. Another embodiment uses an inert gas as the carrier gas. Another embodiment includes pre-heating the carrier gas prior to its insertion into the deposition chamber. Whereby the varying embodiments and combinations herein improve NLOS DVD.01-10-2013
20130017343VAPOR DEPOSITION APPARATUS, VAPOR DEPOSITION METHOD, AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUSAANM Seo; Sang-JoonAACI Yongin-cityAACO KRAAGP Seo; Sang-Joon Yongin-city KRAANM Huh; Myung-SooAACI Yongin-cityAACO KRAAGP Huh; Myung-Soo Yongin-city KRAANM Kim; Seung-HunAACI Yongin-cityAACO KRAAGP Kim; Seung-Hun Yongin-city KRAANM Kim; Jin-KwangAACI Yongin-cityAACO KRAAGP Kim; Jin-Kwang Yongin-city KRAANM Song; Seung-YongAACI Yongin-cityAACO KRAAGP Song; Seung-Yong Yongin-city KR - A vapor deposition apparatus and method for efficiently performing a deposition process to form a thin film with improved characteristics on a substrate, and a method of manufacturing an organic light-emitting display apparatus. The vapor deposition apparatus includes a chamber including an exhaust port; a stage disposed in the chamber, and including a mounting surface on which the substrate is to be disposed; an injection portion including at least one injection opening through which a gas is injected in a direction parallel with a surface of the substrate on which the thin film is to be formed; and a plasma generator disposed apart from the substrate to face the substrate.01-17-2013
20110159212INSULATING FILM MATERIAL, METHOD FOR FORMING FILM BY USING THE INSULATING FILM MATERIAL, AND INSULATING FILM - An insulating film material for plasma CVD, wherein the material is represented by the chemical formula (1); a film forming method using the material; and an insulating film;06-30-2011
20110159211SHADOW RING FOR MODIFYING WAFER EDGE AND BEVEL DEPOSITION - Embodiments of the invention contemplate a shadow ring that provides increased or decreased and more uniform deposition on the edge of a wafer. By removing material from the top and/or bottom surfaces of the shadow ring, increased edge deposition and bevel coverage can be realized. In one embodiment, the material on the bottom surface is reduced by providing a recessed slot on the bottom surface. By increasing the amount of material of the shadow ring, the edge deposition and bevel coverage is reduced. Another approach to adjusting the deposition at the edge of the wafer includes increasing or decreasing the inner diameter of the shadow ring. The material forming the shadow ring may also be varied to change the amount of deposition at the edge of the wafer.06-30-2011
20130022759PLASMA PROCESSING METHOD AND APPARATUS - With the evacuation of an interior of a vacuum chamber halted and with gas supply into the vacuum chamber halted, in a state that a mixed gas of helium gas and diborane gas is sealed in the vacuum chamber, a plasma is generated in a vacuum vessel and simultaneously a high-frequency power is supplied to a sample electrode. By the high-frequency power supplied to the sample electrode, boron is introduced to a proximity to a substrate surface.01-24-2013
20080241420METHOD AND APPARATUS FOR DC VOLTAGE CONTROL ON RF-POWERED ELECTRODE - In a plasma processing chamber, a method for processing a substrate is provided. The method includes supporting the substrate in the plasma processing chamber configured with an upper electrode (UE) and a lower electrode (LE), configuring at least one radio frequency power source to ignite plasma between the UE and the LE, and providing a conductive coupling ring, the conductive coupling ring is coupled to the LE to provide a conductive path. The method further includes providing a plasma-facing-substrate-periphery (PFSP) ring, the PFSP ring being disposed above the conductive coupling ring. The method yet further includes coupling the PFSP ring to at least one of a direct current (DC) ground through an RF filter, the DC ground through the RF filter and a variable resistor, a positive DC power source through the RF filter, and a negative DC power source through the RF filter to control plasma processing parameters.10-02-2008
20080241419DEVICE THAT ENABLES PLASMA IGNITION AND COMPLETE FARADAY SHIELDING OF CAPACITIVE COUPLING FOR AN INDUCTIVELY-COUPLED PLASMA - A method and apparatus for igniting a gas mixture into plasma using capacitive coupling techniques, shielding the plasma and other contents of the plasma reactor from the capacitively-coupled electric field, and maintaining the plasma using inductive coupling are provided. For some embodiments, the amount of capacitive coupling may be controlled after ignition of the plasma. Such techniques are employed in an effort to prevent damage to the surface of a substrate from excessive ion bombardment caused by the highly energized ions and electrons accelerated towards and perpendicular to the substrate surface by the electric field of capacitively-coupled plasma.10-02-2008
20090197015METHOD AND APPARATUS FOR CONTROLLING PLASMA UNIFORMITY - Systems, methods, and apparatus involve a plasma processing chamber for depositing a film on a substrate. The plasma processing chamber includes a lid assembly having a ground plate, a backing plate, and a non-uniformity existing between the ground plate and the backing plate. The non-uniformity may interfere with RF wave uniformity and cause an impedance imbalance between portions of the ground plate and backing plate. The non-uniformity may include a structure or a reduced spacing of non-uniform surfaces. A reduced spacing of non-uniform surfaces may exist where a first distance between the ground plate and the backing plate at a first end is different from a second distance between the ground plate and the backing plate at a second end. The structure may be from 2 cm to 10 cm thick, cover from 20% to 50% of the backing plate, and be located away from a discontinuity existing inside the chamber.08-06-2009
20080226839Surface treatment apparatus and surface treatment method - A surface treatment apparatus includes: a vaporization device vaporizing a silane coupling agent, a treatment device in which a treatment object having an inorganic oriented film is arranged, into which the silane coupling agent that has been vaporized by the vaporization device is introduced, and which performs a surface treatment to the treatment object by subjecting the treatment object to the silane coupling agent; and a control device individually controlling a treatment atmosphere inside the vaporization device and a treatment atmosphere inside the treatment device.09-18-2008
20080226838Plasma CVD apparatus and film deposition method - A plasma CVD apparatus includes a first electrode which is disposed in a reacting furnace and on which a substrate is mounted, a second electrode that is disposed above and opposite the first electrode and generates plasma with the first electrode, and a first gas supply nozzle that is disposed at a height between a height of the first electrode in the reacting furnace and a height of the second electrode, and has a plurality of ejection ports formed and arranged in such a way as to surround an area between the first electrode and the second electrode where plasma is generated.09-18-2008
20080226837Method for the manufacture of a coating having a columnar structure - In the method for the manufacture of a coating (09-18-2008
20130177717METHOD FOR PRODUCING WAVELENGTH PLATE - To produce a wavelength plate that is superior in durability and stability and has a high moisture resistant property. A dielectric material is obliquely vapor deposited on a substrate so as to form a birefringent layer that has columnar portions in each of which fine particles of the dielectric material are stacked in a columnar shape, and interstices that are respectively formed between the columnar portions, and the birefringent layer is subjected to an annealing treatment at a temperature within the range of 100° C. or more to 300° C. or less. Then, a protective film with low moisture permeability is formed on the annealed birefringent layer by forming an inorganic compound on the birefringent layer at high density.07-11-2013
20080213504Plasma Film-Forming Apparatus and Plasma Film-Forming Method - The present invention ensures a uniform concentration of a plasma excitation gas supplied to a plasma generation region while preventing the plasma excitation gas from turning into plasma before supply. In a plasma film forming apparatus for forming a film on a substrate using plasma, a flat-plate structure partitioning the inside of a processing container into two, upper and lower, regions is disposed between a high frequency wave supply unit and a substrate mounting unit in the processing container. The plasma excitation gas is supplied into the processing container from the lower side toward the region on the high frequency wave supply unit side, and the structure is formed with a source gas supply port for supplying a source gas for film formation in the region on the mounting unit side and an opening for allowing plasma generated in the region on the high frequency wave supply unit side to pass to the region on the mounting unit side.09-04-2008
20130129939PROCESS FOR REPAIRING A CYLINDER RUNNING SURFACE BY MEANS OF PLASMA SPRAYING PROCESSES - A method of repairing an inner surface of a cylinder liner housed in an engine block. Material is removed from the inner surface to produce a reduced-thickness region, the reduced-thickness region extending axially relative to the cylinder and stopping short of an end of the liner to leave a region of original diameter between the reduced thickness region and the end of the liner. The surface the reduced-thickness region is then roughened, for example by hammer brushing. A plasma coating is applied to the reduced-thickness region and to at least a portion of the region of original diameter. The coating is then finish-machined to produce a uniform internal diameter equal to an original internal diameter of the region of original diameter prior to the application of the coating.05-23-2013
20130149468METHODS AND APPARATUS FOR INCORPORATING NITROGEN IN OXIDE FILMS - In a first aspect, a first method is provided. The first method includes the steps of (1) preconditioning a process chamber with an aggressive plasma; (2) loading a substrate into the process chamber; and (3) performing plasma nitridation on the substrate within the process chamber. The process chamber is preconditioned using a plasma power that is at least 150% higher than a plasma power used during plasma nitridation of the substrate. Numerous other aspects are provided.06-13-2013
20130149467FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER-READABLE RECORDING MEDIUM - A film deposition apparatus includes a vacuum chamber into which first and second gases are sequentially supplied for a plural times, a rotation table including a first surface having a receiving area and rotating the receiving area inside the vacuum chamber, a first part supplying the first gas to a first region, a second part supplying the second gas to a second region separated from the first region in a peripheral direction of the rotation table via a separation region, a plasma gas part supplying a plasma generation gas into a plasma region inside the vacuum chamber, an antenna facing the first surface of the rotation table and generating plasma from the plasma generation gas inside a plasma space by inductive coupling, and a faraday shield being grounded and provided between the antenna and the plasma space and including slits aligned in a direction perpendicularly intersecting the antenna.06-13-2013
20100297361PLASMA DEPOSITION SOURCE AND METHOD FOR DEPOSITING THIN FILMS - A plasma deposition source for transferring a deposition gas into a plasma phase and for depositing, from the plasma phase, a thin film onto a substrate moving in a substrate transport direction in a vacuum chamber is described. The plasma deposition source includes a multi-region electrode device adapted to be positioned in the vacuum chamber and including at least one RF electrode arranged opposite to the moving substrate, and an RF power generator adapted for supplying RF power to the RF electrode. The RF electrode has at least one gas inlet arranged at one edge of the RF electrode and at least one gas outlet arranged at the opposed edge of the RF electrode. A normalized plasma volume is provided by a plasma volume defined between an electrode surface and an opposite substrate position, divided by an electrode length. The normalized plasma volume is tuned to a depletion length of the deposition gas.11-25-2010
20100316815PLASMA CVD METHOD - A plasma CVD method uses an electrode array in a reaction chamber, the electrode array including a plurality of inductively coupled electrodes, each electrode being folded back at the center so that each electrode is substantially U-shaped with two parallel straight portions, the electrodes are arranged such that all of the parallel straight portions are arranged parallel to each other in a common plane, each of the electrodes having at least a portion with a diameter of 10 mm or less, and a phase controlled power supply for feeding high frequency power to the feeding portions so as to establish a standing wave of a half wavelength or natural number multiple of a half wavelength between a feeding portion and a folded back portion and between a grounded portion and the folded back portion, and is controlled to have a phase difference between adjacent two feeding portions.12-16-2010
20100316814FILM DEPOSITION APPARATUS AND FILM DEPOSITION METHOD - A film deposition apparatus includes: a plasma generating section configured to generate plasma between a cathode target and an anode; a film deposition chamber in which a base material is placed; and a magnetic-field filter section configured to remove a particle from the plasma by a magnetic field and to transfer the plasma to the film deposition chamber. The magnetic-field filter section includes: a first housing area to which a first voltage is applied; and a second housing area, provided downstream of the first housing area in the moving direction of the plasma, to which a second voltage is applied.12-16-2010
20120282416ARGON GAS LEVEL CONTROLLER - A controlled environment enclosure is disclosed. The enclosure has a tank with a lid, wherein the lid and tank are capable of creating a sealed enclosure. The enclosure also has a fluid filling inlet for introduction of a filling fluid into the tank, a fluid sensor for detecting a fluid other than the filling fluid, and a controller connected to the fluid sensor and the fluid filling inlet for selectively allowing the filling of the enclosure by the filling fluid through the fluid filling inlet.11-08-2012
20110311734Two Layer Barrier on Polymeric Substrate - fcPlasma treatment apparatus for treating a substrate (12-22-2011
20130189446LOW PRESSURE HIGH FREQUENCY PULSED PLASMA REACTOR FOR PRODUCING NANOPARTICLES - The present invention provides a low-pressure very high frequency pulsed plasma reactor system for synthesis of nanoparticles. The system includes a chamber configured to receive at least one substrate and capable of being evacuated to a selected pressure. The system also includes a plasma source for generating a plasma from at least one precursor gas and a very high frequency radio frequency power source for providing continuous or pulsed radio frequency power to the plasma at a selected frequency. The frequency is selected based on a coupling efficiency between the pulsed radio frequency power and the plasma. Parameters of the VHF discharge and gas precursors are selected based on nanoparticle properties. The nanoparticle average size and particle size distribution are manipulated by controlling the residence time of the glow discharge (pulsing plasma) relative to the gas molecular residence time through the discharge and the mass flow rates of the nanoparticle precursor gas (or gases).07-25-2013
20130189447METHOD AND DEVICE FOR PRODUCING A PARYLENE COATING - A method of producing a parylene coating on at least one surface of at least one component includes providing a first gas containing parylene monomers and depositing the parylene monomers on the at least one surface of the component by supplying the first gas containing the parylene monomers by a first nozzle to the at least one surface, wherein the component is disposed in an environment at atmospheric pressure.07-25-2013
20120021139MANUFACTURING METHOD OF DISPLAY DEVICE AND MOLD THEREFOR - A method of manufacturing a display device in which a film deposited on a substrate through openings in a covering layer is easily removed from the covering layer, is described herein, includes forming a master layer having a predetermined pattern of openings on a base substrate; spraying a light shielding material on the master layer; fabricating a mold provided with the light shielding film by forming a moldable material layer on the base substrate and the master layer; curing the moldable material layer and the light shielding material; arranging, pressurizing, and exposing the mold on an insulation substrate having a photosensitive film formed thereon after separating the mold from the master layer; and developing the photosensitive film after separating the mold from the insulation substrate.01-26-2012
20120027953Rotating Reactor Assembly for Depositing Film on Substrate - A rotating reactor assembly includes an injector rotor comprising a channel extending in a direction parallel to a rotational axis of the injector rotor and at least one injection hole connected to the channel; and an intake port through which a material is introduced. As the injector rotor rotates, the channel is timely and/or periodically connected to the intake port such that the material is injected to a substrate through the at least one injection hole.02-02-2012
20120027952TRANSPORT DEVICE HAVING A DEFLECTABLE SEALING FRAME - The invention describes a device for transporting a substrate (02-02-2012
20130196080DEPOSITION APPARATUS AND DEPOSITION METHOD - A deposition apparatus according to an exemplary embodiment of the present invention includes a plurality of reactors; a plurality of gas supply units connected to the plurality of reactors; and a plurality of plasma supply units connected to the plurality of reactors. Each of the plasma supply units includes: a plasma power supplier; a plurality of diodes connected to the plasma power supplier; and a reverse voltage driver connected to the plurality of diodes through respectively corresponding switches.08-01-2013
20120034393FORMATION METHOD OF COATING - A formation method of a coating that coats a coated body with the coating includes: generating cylindrical plasma in a vacuum deposition chamber as well as supplying material gas into the vacuum deposition chamber; applying pulse voltage to the coated body; and attaching a shield member that shields an uncoated member to an uncoated part where the coating of the coated body is not formed with separation spacing over a coated part where the coating is to be formed for preventing decrease of hardness of the coating in the coated part.02-09-2012
20120295038METHOD AND APPARATUS FOR USING SOLUTION BASED PRECURSORS FOR ATOMIC LAYER DEPOSITION - A unique combination of solution stabilization and delivery technologies with special ALD operation is provided. A wide range of low volatility solid ALD precursors dissolved in solvents are used. Unstable solutes may be stabilized in solution and all of the solutions may be delivered at room temperature. After the solutions are vaporized, the vapor phase precursors and solvents are pulsed into a deposition chamber to assure true ALD film growth.11-22-2012
20120301632METHOD FOR FORMING THIN FILM USING RADICALS GENERATED BY PLASMA - A method for forming a thin film using radicals generated by plasma may include generating radicals of a reactant precursor using plasma; forming a first thin film on a substrate by exposing the substrate to a mixture of the radicals of the reactant precursor and a source precursor; exposing the substrate to the source precursor; and forming a second thin film on the substrate by exposing the substrate to the mixture of the radicals of the reactant precursor and the source precursor. Since the substrate is exposed to the source precursor between the formation of the first thin film and the formation of the second thin film, the rate of deposition may be improved.11-29-2012
20120094033NANOPARTICLES WITH GRAFTED ORGANIC MOLECULES - An apparatus for producing grafted Group IV nanoparticles is provided and includes a source of Group IV nanoparticles. A chamber is configured to carry the nanoparticles in a gas phase and has an inlet and an exit. The inlet configured to couple to an organic molecule source which is configured to provide organic molecules to the chamber. A plasma source is arranged to generate a plasma. The plasma causes the organic molecules to break down and/or activate in the chamber and bond to the nanoparticles. A method of producing grafted Group IV nanoparticles is also provided and includes receiving Group IV nanoparticles in a gas phase, creating a plasma with the nanoparticles, and allowing the organic molecules to break down and/or become activated in the plasma and bond with the nanoparticles.04-19-2012
20120094032MARINE ANTIFOULANT COATING - A protective coating applied to the underwater portion of a marine vessel operable to inhibit the growth of marine foulants. The coating comprises a polymer, a marine biocide, a preservative, an antimicrobial agent, and optionally a coloring agent. In certain embodiments, the marine biocide, preservative, and optional antimicrobial agent are chemically bonded with the polymer thereby significantly reducing the ability of the biocide, preservative, and antimicrobial agent to leach from the coating into the surrounding environment.04-19-2012
20130209704POWER LANCE AND PLASMA-ENHANCED COATING WITH HIGH FREQUENCY COUPLING - The disclosure relates to an apparatus for coating a container e.g. a plastic bottle, by means of a plasma treatment. The apparatus includes a high-frequency source, an outer electrode located outside the container to be treated, and an at least partially electrically conducting gas lance for the supply of process gas into the container. The outer electrode is grounded and/or is on the same potential as other parts of the container coating apparatus located outside the container to be treated, such as pressure chamber parts or housing parts. The at least one gas lance is capable of irradiating a high frequency, which can be generated by the high-frequency source, into the interior of the container to be treated.08-15-2013

Patent applications in class Plasma (e.g., corona, glow discharge, cold plasma, etc.)

Patent applications in all subclasses Plasma (e.g., corona, glow discharge, cold plasma, etc.)