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Pretreatment of coating supply or source outside of primary deposition zone or off site

Subclass of:

427 - Coating processes

427457000 - DIRECT APPLICATION OF ELECTRICAL, MAGNETIC, WAVE, OR PARTICULATE ENERGY

Patent class list (only not empty are listed)

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Class / Patent application numberDescriptionNumber of patent applications / Date published
427561000 Pretreatment of coating supply or source outside of primary deposition zone or off site 44
20130084406METHOD FOR PRODUCING ELECTRODE COMPOSITE MATERIAL - An object of the present invention is to simplify the process of producing an electrode composite material. Disclosed is a method for producing an electrode composite material, comprising the steps of: preparing a material comprising Li, La, Ti and O and heating the material, wherein the composition ratio between Li, La and Ti of the material is in the range of a triangle having three vertices at LiO04-04-2013
20090047444METHOD FOR PRODUCTION OF A LAYER HAVING NANOPARTICLES, ON A SUBSTRATE - The invention relates to a method for producing a layer (02-19-2009
20090162569RECORDING INK, INK MEDIA SET, INK CARTRIDGE, INK RECORDED MATTER, INKJET RECORDING APPARATUS, AND INKJET RECORDING METHOD - There is provided a recording ink containing: solid constituents, which contain a colorant and a resin, and stay solid in the ink having a temperature of 25° C.; liquid constituents, which have a higher boiling point than a boiling point of water, and stay liquid in the ink having a temperature of 25° C.; and water, wherein a total amount of the solid constituents in the recording ink is in the range of 2.0% by mass or more to less than 20% by mass, wherein a ratio A/B of a total amount of the liquid constituents in the recording ink A to the total amount of the solid constituents in the recording ink B is from 0.70 to 1.75, and wherein the viscosity of the recording ink at 25° C. is 10 mPa s or less.06-25-2009
20100272921METHOD AND DEVICES FOR CONTROLLING A VAPOUR FLOW IN VACUUM EVAPORATION - The invention relates to a method and a device for the coating of running substrates (10-28-2010
20120141692METHOD FOR PRODUCING A STRUCTURE - A method for producing a structure including: colliding a photocurable adhesive composition with a light source, at least a portion of which is covered with a transparent member, thereby forming a film of the photocurable adhesive composition on the surface of the transparent member; irradiating the film of the photocurable adhesive composition with light on the surface of the transparent member; and dropping the photocurable adhesive composition irradiated with light on the structure in the region to be coated, thereby applying the photocurable adhesive composition to the region to be coated, thereby preventing an occurrence of uncured areas caused by irregular irradiation with light, and an occurrence of coloration and carbonization caused by excessive irradiation.06-07-2012
20090017226Use of infrared technology to install and/or repair construction membranes - An apparatus is provided for applying a construction material, the apparatus having construction and an infrared heat emitter for providing infrared heat on the construction material. The construction material can be a roll of roofing material, which can be a roll of modified asphalt/bitumen roofing membrane material. The infrared emitter can be gas powered or electric powered. A method of applying a roofing membrane is also provided, where construction material is heated using infrared heat and applied onto a rooftop or other suitable surface.01-15-2009
20100323123PASTE PATTERNS FORMATION METHOD AND TRANSFER FILM USED THEREIN - Disclosed is a paste pattern formation method comprising the steps of: forming a transfer pattern material on a film base material to prepare a transfer film; sticking the transfer film on a substrate on which a transfer pattern is formed so that the transfer pattern material contacts the substrate; separating the film base material from the transfer pattern material; filling a paste into the transfer pattern depression; solidifying the paste; and removing the transfer pattern material.12-23-2010
20090324847Method of avoiding a parasitic plasma in a plasma source gas supply conduit - It has been discovered that a parasitic plasma problem which has existed with respect to incoming plasma source gases present in a source gas feed line to a plasma processing chamber can be avoided. The stability of a parasitic plasma is avoided by installing an RF resistor conduit in the source gas feed line and increasing the pressure in the RF resistor conduit through which the plasma source gases flow. Use of a variable surface restrictor in the RF resistor conduit or between the RF resistor conduit and the plasma processing chamber enables not only avoidance of the formation of a parasitic plasma in incoming plasma source gases, but also easier cleaning of the processing chamber plasma generation system when a remotely generated plasma is used for such cleaning.12-31-2009
20120164351SELECTIVELY FUNCTIONIZED TRANSDUCER MICROARRAY - A system and method are provided for selectively functionalizing a transducer microarray. The method provides a microarray including a field of transducers exposed to a shared local environment. A difference in the pH associated with the transducers is created. As a result, functional molecules are selectively bound to transducers in response to the pH associated with the transducers. In one aspect, the micro-array also provides a field of transducer pH-generating electrodes, one pH-generating electrode for each transducer, and a counter electrode. The difference in pH associated with the transducers is created by selectively applying a voltage potential between pH-generating electrodes and the counter electrode, to create a difference of pH in regions adjacent to the transducers.06-28-2012
20110104398METHOD AND SYSTEM FOR DEPOSITING MULTIPLE MATERIALS ON A SUBSTRATE - A system for depositing two or more materials on a substrate is provided. The system comprises one or more susceptors configured to define two or more recesses for accommodating at least a first material and a second material respectively. The first and second materials are different. The system further comprises one or more heaters for heating the first material and the second material for sublimation of the first and second materials for deposition on the substrate. A method for depositing two or more materials on a substrate is also presented.05-05-2011
20090061107Formation of Carbon-Containing Material - A method includes forming ionic clusters of carbon-containing molecules, which molecules have carbon-carbon sp03-05-2009
20110159210Metal halide reactor deposition method - The invention utilizes a metal halide generating reactor that permits the temperature of the generation of a metal halide from a gaseous halide compound, a halogen gas, or an interhalogen compound at controlled temperatures distinctly different from controlled temperatures of a deposition furnace where metal layers are deposited by CVD processes upon substrates. The method may be further expanded to provide additional layers or reactions on the surface of the substrates with secondary reactions between reactive gases or between species of a metal halide different from the first deposition. Metal halide gases may for example be generated at successive temperatures and with successive different halogen gases or compounds.06-30-2011
427562000 Electric discharge (e.g., corona, glow discharge, etc.) 16
20090047445Method Of Making A Piezoelectric Device - A method of forming a piezoelectric device is disclosed. In one such method, a coating material is formed. The coating material has a piezoelectric precursor. The coating material is applied to a first electrode. The precursor is heated to a temperature that is above the Curie temperature of the precursor, but below the melting temperature of the precursor. While the precursor is above its Curie temperature, a voltage is applied across the precursor. While the voltage is applied across the precursor, the temperature of the precursor is reduced to below the Curie temperature.02-19-2009
20090148623METHOD FOR PRODUCING AN ANTIMICROBIAL COATING DATA TECHNICAL SURFACE - The invention relates to a method for producing a microbial substance-releasing layer on a technical surface. The inventive method comprises three steps: a) producing a solution from polyvinylacetate, a preservative agent and a solvent, b) applying the solution to the technical surface, and c) drying the solution applied to the technical surface while forming the layer. The inventive method is characterized by using benzoic acid, sorbic acid, natamycin, bacteriocines, plant extracts or mixtures thereof as the preservative agent and an ethanol/water mixture, ethyl acetate or acetone as the solvent.06-11-2009
20090202739Method For Coating A Substrate Using Plasma - A method for forming a polymeric coating on a substrate surface, by plasma treating a mixture comprising a free-radical initiated polymerisable monomer having one or more free-radical polymerisable groups in the presence of a free radical initiator, wherein said plasma treatment is a soft ionisation plasma process (a process wherein precursor molecules are not fragmented during the plasma process and as a consequence, the resulting polymeric coating has the physical properties of the precursor or bulk polymer) aid depositing the resulting polymeric coating material onto a substrate surface.08-13-2009
20100047471BARRIER METAL FILM PRODUCTION APPARATUS, BARRIER METAL FILM PRODUCTION METHOD, METAL FILM PRODUCTION METHOD, AND METAL FILM PRODUCTION APPARATUS02-25-2010
20120177844METHOD AND DEVICE FOR CHEMICAL VAPOR DEPOSITION OF POLYMER FILM ONTO A SUBSTRATE - A method for chemical vapor deposition of a polymer film onto a substrate (07-12-2012
20110123726NANOSTRUCTURE SORTING - Apparatus, methods, and systems for sorting nanostructures, such as nanodots or nanotubes, are described. Sorting the nanostructures removes remnants of the nanotube fabrication from a mixture or bundle of material. The sorting activity may include suspending the mixture in a plasma to separate nanostructures and remnant material. A motive force, such as gas flow or laser, can be applied to the suspended nanostructures and remnants to move larger material out of the plasma, leaving smaller material trapped in the plasma. Additional embodiments are disclosed.05-26-2011
20110008549STRUCTURE FABRICATION USING NANOPARTICLES - Apparatuses and techniques for fabricating a structure from nanoparticles are provided.01-13-2011
20130017342METHOD AND APPARATUS FOR DEPOSITING NANOSTRUCTURED THIN LAYERS WITH CONTROLLED MORPHOLOGY AND NANOSTRUCTUREAANM Riccardi; ClaudiaAACI MilanoAACO ITAAGP Riccardi; Claudia Milano ITAANM Piselli; MorenoAACI MilanoAACO ITAAGP Piselli; Moreno Milano ITAANM Fumagalli; Francesco SirioAACI TianoAACO ITAAGP Fumagalli; Francesco Sirio Tiano ITAANM Di Fonzo; FabioAACI MilanoAACO ITAAGP Di Fonzo; Fabio Milano ITAANM Bottani; Carlo EnricoAACI MilanoAACO ITAAGP Bottani; Carlo Enrico Milano IT - A method for producing, by means of plasma, nanostructured thin layers particularly of the hierarchically organized type, and an apparatus for implementing the method, are described. At least a first chamber (01-17-2013
427563000 Silicon containing coating material 6
20100151149Thin film deposition via a spatially-coordinated and time-synchronized process - A deposition system and process for the formation of thin film materials. In one embodiment, the process includes forming an initial plasma from a first material stream and allowing the plasma to evolve in space and/or time to extinguish species that are detrimental to the quality of the thin film material. After the initial plasma evolves to an optimum state, a second material stream is injected into the deposition chamber to form a composite plasma that contains a distribution of species more conducive to formation of a high quality thin film material. The deposition system includes a deposition chamber having a plurality of delivery points for injecting two or more streams (source materials or carrier gases) into a plasma region. The delivery points are staggered in space to permit an upstream plasma formed from a first material stream deposition source material to evolve before combining a downstream material stream with the plasma. Injection of different material streams is also synchronized in time. The net effect of spatial coordination and time synchronization of material streams is a plasma whose distribution of species is optimized for the deposition of a thin film photovoltaic material at high deposition rates. Delivery devices include nozzles and remote plasma sources.06-17-2010
20090317564METHOD AND SYSTEM FOR GROWING A THIN FILM USING A GAS CLUSTER ION BEAM - A method of forming a thin film on a substrate is described. The method comprises providing a substrate in a reduced-pressure environment, and generating a gas cluster ion beam (GCIB) in the reduced-pressure environment from a pressurized gas mixture. A beam acceleration potential and a beam dose are set to achieve a thickness of the thin film ranging up to about 300 angstroms and to achieve a surface roughness of an upper surface of the thin film that is less than about 20 angstroms. The GCIB is accelerated according to the beam acceleration potential, and the accelerated GCIB is irradiated onto at least a portion of the substrate according to the beam dose. By doing so, the thin film is grown on the at least a portion of the substrate to achieve the thickness and the surface roughness.12-24-2009
20100247803Chemical vapor deposition method - A chemical vapor deposition (CVD) method for depositing a thin film on a surface of a substrate is described. The CVD method comprises disposing a substrate on a substrate holder in a process chamber, and introducing a process gas to the process chamber, wherein the process gas comprises a chemical precursor. The process gas is exposed to a non-ionizing heat source separate from the substrate holder to cause decomposition of the chemical precursor. A thin film is deposited upon the substrate.09-30-2010
20120213945ENHANCED DEPOSITION OF LAYER ON SUBSTRATE USING RADICALS - Embodiments relate to using radicals to at different stages of deposition processes. The radicals may be generated by applying voltage across electrodes in a reactor remote from a substrate. The radicals are injected onto the substrate at different stages of molecular layer deposition (MLD), atomic layer deposition (ALD), and chemical vapor deposition (CVD) to improve characteristics of the deposited layer, enable depositing of material otherwise not feasible and/or increase the rate of deposition. Gas used for generating the radicals may include inert gas and other gases. The radicals may disassociate precursors, activate the surface of a deposited layer or cause cross-linking between deposited molecules.08-23-2012
20120219727METHOD OF SURFACE TREATING MICROFLUIDIC DEVICES - The formation of a barrier layer within individual channels or cavities of a microfluidic device is described. The barrier layer is effected through a gas phase deposition process, desirably implemented in a plasma environment using a gas plasma reactor. Judicious selection of a precursor compound used within the gas plasma reactor can provide for generation of a layer on the individual surfaces. Desirably the surface or barrier layer is generated through the chemical adsorption of a metalloid oxide such as a silicon oxide layer on the surface of the individual channels or cavities.08-30-2012
20120263886Thin Film Deposition via a Spatially-Coordinated and Time-Synchronized Process - A system and process for the formation of thin film materials. The process includes forming a plasma from a first material stream and allowing the plasma to evolve in space and/or time to extinguish species that are detrimental to the quality of the thin film material. After the plasma evolves to an optimum state, a second material stream is injected into the deposition chamber to form a composite plasma that contains a distribution of species more conducive to formation of a high quality thin film material. The system includes a deposition chamber having a plurality of delivery points for injecting two or more streams into a plasma region. The delivery points are staggered in space to permit an upstream plasma formed from a first material stream deposition source material to evolve before combining a downstream material stream with the plasma.10-18-2012
427564000 Metal, metal alloy, or metal oxide containing coating material 2
20090324848METAL FILM PRODUCTION APPARATUS - A source gas is supplied into a chamber through a nozzle, and electromagnetic waves are thrown from a plasma antenna into the chamber. The resulting Cl12-31-2009
20100062181METAL FILM PRODUCTION APPARATUS AND METAL FILM PRODUCTION METHOD - A metal film production method supplies a source gas containing a halogen, such as a chlorine, to the interior of a chamber such that the source gas is intermittently supplied, to form a Cu component of a precursor into a film on a substrate, while suppressing a relative increase in etching particles. Thus, the source gas is supplied in the full presence of plasma particles contributing to film formation. Moreover, the source gas is supplied in a state in which a Cu film formed is not etched with the etching particles. Consequently, the Cu film is reliably increased with respect to the film formation time to increase the film formation speed. The temperature of the substrate is less than that of the etched member.03-11-2010
427565000 Sonic or ultrasonic (e.g., vibratory energy, etc.) 4
20100075064METHOD FOR MAKING MAGNESIUM-BASED COMPOSITE MATERIAL - A method for making a magnesium-based composite material includes mixing nanoscale reinforcements with a melted magnesium-based material to obtain a pre-mixture. The pre-mixture is agitated by an ultrasonic process to obtain a mixture. The mixture is sprayed to a substrate.03-25-2010
20080292810Method For Atomizing Material For Coating Processes - A method for atomizing a liquid including providing an atomizer having a liquid supply conduit having an outlet at one end, a gas supply conduit opening into a port in the liquid supply conduit upstream of the outlet, and a means for imparting vibrational energy to the atomizer. In an embodiment, the liquid supply conduit and gas supply conduit are coaxially displaced relative to one another. The method further includes flowing liquid through the liquid supply conduit to the outlet while simultaneously flowing gas through the gas supply conduit, and imparting vibrational energy to the atomizer to atomize the liquid exiting from the outlet. The introduction of gas at the port results in a spray of droplets with improved dimensional properties.11-27-2008
20110318504METHOD FOR FABRICATING COMPOSITE MATERIAL COMPRISING NANO CARBON AND METAL OR CERAMIC - Disclosed is a method for fabricating a composite material comprising nano carbon and metal or ceramic, in more detail, a method for fabricating a composite material in which metallic or ceramic particles are uniformly dispersed on a nano carbon surface, the method including (1) coating a metal layer on nano carbon, (2) fabricating composite nano powders by performing a thermal treatment for the nano carbon coated with the metal layer, and (3) sintering the composite nano powders, whereby the composite nano powders, in which metallic or ceramic nano powders are uniformly mixed on the surface of the nano carbon, can be easily fabricated, and such composite nano powders can be sintered so as to fabricate the composite material, in which the nano carbon and the metallic or ceramic powders are uniformly dispersed. Also, the use of the composite material can have a great contribution to implementation of high performance, lightweight and size reduction in electric, electronic and vehicle-related fields, in detail, the composite material can be applied to an electrode material with a high conductivity, a thermal interface with a high thermal conductivity, a structural material with a high strength-to-weight ratio, and the like.12-29-2011
20130022758Method and Resulting Device for Processing Phosphor Materials in Light Emitting Diode Applications - A method for processing phosphors for use in optical applications includes providing a luminescent material in particulate form. The luminescent material has particles within a size range. A filter process removes particulates having a size greater than two times an upper limit of the size range to separate the particles by the desired particle size range.01-24-2013
427566000 Electron irradiation (e.g., e-beam evaporation, etc.) 9
20100040801VAPOR DEPOSITION MATERIAL, PROCESS FOR PRODUCING OPTICAL MEMBER OR PLASTIC LENS FOR SPECTACLE WITH USE THEREOF, AND PLASTIC LENS FOR SPECTACLE - A material for vapor deposition which is obtained by mixing a specific organosilicon compound having an alkyl group substituted with fluorine, a specific silane compound and a specific modified silicone oil, a process for producing an optical member which comprises a step of solidifying the material for vapor deposition described above by heating and a step of vapor depositing the solidified material for vapor deposition on a substrate made of a plastics by heating by a heating means to form a thin film exhibiting a water-repelling property, a process for producing a plastic lens for spectacles which is the above process applied to producing the plastic lens for spectacles, and a plastic lens for spectacles which is produced in accordance with the process. The water-repelling thin film in the optical member and in the plastic lens for spectacles produced in accordance with the above processes exhibits improved slipping property in combination with improved durability and abrasion resistance from those of conventional thin films.02-18-2010
20130129937Vapor Deposition of Ceramic Coatings - An apparatus for applying a coating to a substrate comprises a deposition chamber. A crucible may hold a melt pool of coating material. The melt pool is rotated during deposition.05-23-2013
20110229655PROCESS FOR PRODUCTION OF ELECTRET MATERIAL - Provided is a process by which an electret material having excellent thermal resistance of charge retentivity can be obtained. The process for producing an electret material of the invention includes an irradiation step, a formation step, and a charging step. In the irradiation step, a dispersion containing fine polytetrafluoroethylene particles is irradiated with γ rays. In the formation step, the dispersion which has been irradiated with γ rays is applied to an electrode plate and then dried, and the fine polytetrafluoroethylene particles are sintered to form a polytetrafluoroethylene layer on the electrode plate. In the charging step, the surface of the polytetrafluoroethylene layer is subjected to a charging treatment.09-22-2011
20100221450Method for Producing a Carbon-Containing Material by Carbon Electron-Beam Vaporisation in a Vacuum and a Subsequent Condensation Thereof on a Substrate and a Device for Carrying Out Said Method - The invention relates to a method for producing a carbon-containing material by the carbon or carbon and another component electron-beam vaporization in vacuum and by the consequent condensation thereof consisting in reflecting a carbon vapour flow with the aid of a reflector at least once on a path between a crucible and the substrate, in capturing atoms and clusters of a transition metal, in directing the pure carbon vapour flow to the substrate, wherein it meets the vapour flow of a second organic or non-organic component, and in condensing in the substrate heating and/or cooling conditions. When required, a mixture of several neutral or reaction gases is supplied to a vacuum condensation chamber/area. The invention device for producing a carbon-containing material by the carbon or carbon and another component electron-beam vaporization in a vacuum and by consequent condensation thereof comprises at least one reflector for capturing heavy atoms and clusters of the transition metal and a gas supply inlet valve unit, thereby making it possible to obtain the pure vapour flow of carbon or the carbon with the added second organic or non-organic component and to condense it on the solid or liquid surface of the substrate by heating/cooling said surface and, when, necessary, by supplying corresponding gases for obtaining especially pure carbon-containing materials and for synthesizing novel nanomaterials.09-02-2010
20090176034Surface Treatment Technique and Surface Treatment Apparatus Associated With Ablation Technology - The invention relates to a surface-treatment technique in association with ablation, a surface-treatment apparatus and a turbine scanner. The invention also relates to a method of producing a coating, a radiation transmission line, a copying unit and a printing unit. The invention further relates to an arrangement for adjusting the radiation power of a radiation source in a radiation transmission line and a laser apparatus.07-09-2009
20100196623FILM FORMING METHOD AND FILM FORMING APPARATUS - The present invention provides a film forming method and a film forming apparatus each of which is capable of forming films at low cost. The film forming method of the present invention includes the steps of (i) melting a solid material 08-05-2010
20120128894Crucible for Electron Gun Evaporation - A lower crucible component 05-24-2012
427567000 Silicon or metal oxide coating (e.g., glass, etc.) 2
20110111135THIN FILM MANUFACTURING METHOD AND SILICON MATERIAL THAT CAN BE USED WITH SAID METHOD - Particles coming from an evaporation source 05-12-2011
20120100306THIN FILM MANUFACTURING METHOD AND SILICON MATERIAL WHICH CAN BE USED IN THE METHOD - Particles coming from an evaporation source 04-26-2012
427568000 Silicon containing coating supply or source 3
20110287192DEVICE AND METHOD FOR COATING A SUBSTRATE USING CVD - The invention relates to a device for coating a substrate (11-24-2011
20090053427Method of Producing Glass of Optical Quality - Glass is produced by depositing presintering composition on a preform set into move in front of a plasma torch which moves back and forth substantially parallel to a longitudinal direction of the preform, a first feed duct feeds the plasma with grains of the presintering composition while optionally a second feed duct feeds the plasma with a fluorine or chlorine compound, preferably a fluorine compound, mixed with a carrier gas, whereby the presintering composition consists of granules of metal oxides or metalloid oxides of a pyrogenic silicon dioxide powder with a BET surface area of 30 to 90 m02-26-2009
20110129616OXYGEN-DOPING FOR NON-CARBON RADICAL-COMPONENT CVD FILMS - Methods of forming silicon oxide layers are described. The methods include the steps of concurrently combining both a radical precursor and a radical-oxygen precursor with a carbon-free silicon-containing precursor. One of the radical precursor and the silicon-containing precursor contain nitrogen. The methods result in depositing a silicon-oxygen-and-nitrogen-containing layer on a substrate. The oxygen content of the silicon-oxygen-and-nitrogen-containing layer is then increased to form a silicon oxide layer which may contain very little nitrogen. The radical-oxygen precursor and the radical precursor may be produced in separate plasmas or the same plasma. The increase in oxygen content may be brought about by annealing the layer in the presence of an oxygen-containing atmosphere and the density of the film may be increased further by raising the temperature even higher in an inert environment.06-02-2011

Patent applications in class Pretreatment of coating supply or source outside of primary deposition zone or off site

Patent applications in all subclasses Pretreatment of coating supply or source outside of primary deposition zone or off site