Class / Patent application number | Description | Number of patent applications / Date published |
427526000 | Nonuniform or patterned ion plating or ion implanting (e.g., mask, etc.) | 22 |
20090087578 | METHOD FOR DEPOSITING FILMS USING GAS CLUSTER ION BEAM PROCESSING - A method for depositing material on a substrate is described. The method comprises maintaining a reduced-pressure environment around a substrate holder for holding a substrate having a surface, and holding the substrate securely within the reduced-pressure environment. Additionally, the method comprises providing to the reduced-pressure environment a gas cluster ion beam (GCIB) from a pressurized gas mixture, accelerating the GCIB, and irradiating the accelerated GCIB onto at least a portion of the surface of the substrate to form a thin film. In one embodiment, the pressurized gas mixture comprises a silicon-containing specie and at least one of a nitrogen-containing specie or a carbon-containing specie for forming a thin film containing silicon and at least one of nitrogen or carbon. In another embodiment, the gas mixture comprises a metal-containing specie for forming a thin metal-containing film. In yet another embodiment, the pressurized gas mixture comprises a fluorocarbon-containing specie for forming a thin fluorocarbon-containing film. | 04-02-2009 |
20100098873 | PATTERNING OF MAGNETIC THIN FILM USING ENERGIZED IONS - A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed. | 04-22-2010 |
20100159154 | METHODS FOR CREATING A STEPPED PERPENDICULAR MAGNETIC POLE VIA MILLING AND/OR METAL LIFTOFF - A method in one embodiment includes forming a layer of a nonmagnetic material above an upper surface of a substrate; forming a resist structure above the layer of nonmagnetic material, wherein the resist structure has an undercut; removing a portion of the layer of nonmagnetic material not covered by the resist structure; depositing a layer of magnetic material above the substrate adjacent a remaining portion of the layer of nonmagnetic material such that at least portions of the layer of magnetic material and the remaining portion of the layer of nonmagnetic material lie in a common plane; removing the resist structure; and forming a write pole above the layer of magnetic material and the remaining portion of the layer of nonmagnetic material. Additional methods are also presented. | 06-24-2010 |
20100272917 | Method and apparatus - A method and apparatus, the method including: forming a recess in a graphene layer wherein the recess creates a boundary between a first portion of the graphene layer and a second portion of the graphene layer; depositing electrically insulating material within the recess; and depositing an electrically conductive material over the insulating material. | 10-28-2010 |
20110104393 | PLASMA ION IMPLANTATION PROCESS FOR PATTERNED DISC MEDIA APPLICATIONS - Processes and apparatus of forming patterns including magnetic and non-magnetic domains on a magnetically susceptible surface on a substrate are provided. In one embodiment, a method of forming a pattern of magnetic domains on a magnetically susceptible material disposed on a substrate includes exposing a first portion of a magnetically susceptible layer to a plasma formed from a gas mixture, wherein the gas mixture includes at least a halogen containing gas and a hydrogen containing gas for a time sufficient to modify a magnetic property of the first portion of the magnetically susceptible layer exposed through a mask layer from a first state to a second state. | 05-05-2011 |
20110212272 | MANUFACTURING METHOD FOR MAGNETIC RECORDING MEDIUM - A magnetic recording medium having a high magnetic pattern contrast is manufactured. By changing an acceleration voltage that accelerates ions in a process gas, depths (peak depths D | 09-01-2011 |
20120027947 | Nanotipped device and method - A dispensing device has a cantilever comprising a plurality of thin films arranged relative to one another to define a microchannel in the cantilever and to define at least portions of a dispensing microtip proximate an end of the cantilever and communicated to the microchannel to receive material therefrom. The microchannel is communicated to a reservoir that supplies material to the microchannel. One or more reservoir-fed cantilevers may be formed on a semiconductor chip substrate. A sealing layer preferably is disposed on one of the first and second thin films and overlies outermost edges of the first and second thin films to seal the outermost edges against material leakage. Each cantilever includes an actuator, such as for example a piezoelectric actuator, to impart bending motion thereto. The microtip includes a pointed pyramidal or conical shaped microtip body and an annular shell spaced about the pointed microtip body to define a material-dispensing annulus thereabout. The working microtip may be used to dispense material onto a substrate, to probe a surface in scanning probe microscopy, to apply an electrical stimulus or record an electrical response on a surface in the presence of a local environment created around the tip by the material dispensed from the tip or to achieve other functions. | 02-02-2012 |
20120082800 | METHOD FOR MANUFACTURING MAGNETIC RECORDING MEDIUM - According to one embodiment, there is provided a method for manufacturing a magnetic recording medium, the method including: depositing a magnetic recording layer on a substrate; forming a mask on a region of the magnetic recording layer corresponding to a recording area; irradiating another region of the magnetic recording layer where the mask is not formed with an ion beam using a C-containing gas as a source gas to deactivate the another region and to thereby form a non-recording area; and forming a protective film over an entire surface of the substrate. | 04-05-2012 |
20120189781 | METHOD OF FORMING CONDUCTIVE LAYER AND SEMICONDUCTOR DEVICE - Provided are a method of forming a conductive layer on an inner portion of a through-electrode in which uniform adhesion property of plating in the inner portion of a through-hole is enhanced and a tact time is short, and a semiconductor device. The method of forming a conductive layer includes: a first plating step of forming a first plating layer on the inner portion of the through-hole; a plating suppression layer forming step of forming a plating suppression layer including a material different from a material of the first plating layer in an opening portion of the through-hole after the first plating step; and a second plating step of forming a second plating layer by plating on the inner portion of the through-hole after the plating suppression layer forming step. | 07-26-2012 |
20120196047 | DETERMINING RELATIVE SCAN VELOCITY TO CONTROL ION IMPLANTATION OF WORK PIECE - To select a relative velocity profile to be used in scanning an actual work piece with an ion implant beam of an ion implantation tool, the implantation of a virtual work piece is simulated. A dose distribution is calculated across the virtual work piece based on an implant beam profile and a relative velocity profile. A new relative velocity profile is then determined based on the calculated dose distribution and the relative velocity profile used in calculating the dose distribution. A new dose distribution is then calculated using the new relative velocity profile. A new relative velocity profile is determined and a corresponding new dose distribution is calculated iteratively until the new dose distribution meets one or more predetermined criteria. The new relative velocity profile is stored as the selected relative velocity profile when the new dose distribution meets the one or more predetermined criteria. | 08-02-2012 |
20120201970 | METHOD OF MAKING A MULTILAYER COMPOSITE - A method for providing a multilayer composite includes the steps of providing a first composite comprising a film of a dielectric material with a front surface and an opposite rear surface, the front surface comprising a surface pattern; depositing an electrically conductive layer onto the surface pattern; providing a second composite comprising a film with a front surface and an opposite rear surface, the front surface comprising a surface pattern; depositing an electrically conductive layer covering at least a portion of the surface pattern; arranging the first composite on the second composite; and fixating the position of the first composite relative to the second composite. | 08-09-2012 |
20120207944 | FABRICATION AND SELECTIVE PATTERNING OF THIN FILMS USING ION BEAM-ENHANCED ATOMIC AND MOLECULAR LAYER DEPOSITION - Generally, the present invention relates to patterning techniques for creating nanoscale features on a substrate. The invention offers an improved method over traditional e-beam or photolithographic techniques and uses atomic layer deposition (ALD) chemistries and a source of high-energy ions. These either as focused or a flood of ions facilitate ALD deposition by providing additional energy to the reaction or, more significantly, can form part of the final chemical structure of the ALD coating. | 08-16-2012 |
20120288637 | METHODS OF AFFECTING MATERIAL PROPERTIES AND APPLICATIONS THEREFOR - Methods of affecting a material's properties through the implantation of ions, such as by using a plasma processing apparatus with a plasma sheath modifier. In this way, properties such as resistance to chemicals, adhesiveness, hydrophobicity, and hydrophilicity, may be affected. These methods can be applied to a variety of technologies. In some cases, ion implantation is used in the manufacture of printer heads to reduce clogging by increasing the materials hydrophobicity. In other embodiments, MEMS and NEMS devices are produced using ion implantation to change the properties of fluid channels and other structures. In addition, ion implantation can be used to affect a material's resistance to chemicals, such as acids. | 11-15-2012 |
20130108799 | HIGH-THROUGHPUT ION IMPLANTER | 05-02-2013 |
20130164455 | DEMAGNETIZATION OF MAGNETIC MEDIA BY C DOPING FOR HDD PATTERNED MEDIA APPLICATION - Embodiments described herein provide methods and apparatus for treating a magnetic substrate having an imprinted, oxygen-reactive mask formed thereon by implanting ions into a magnetically active surface of the magnetic substrate through the imprinted oxygen-reactive mask, wherein the ions do not reduce the oxygen reactivity of the mask, and removing the mask by exposing the substrate to an oxygen-containing plasma. The mask may be amorphous carbon, through which carbon-containing ions are implanted into the magnetically active surface. The carbon-containing ions, which may also contain hydrogen, may be formed by activating a mixture of hydrocarbon gas and hydrogen. A ratio of the hydrogen and the hydrocarbon gas may be selected or adjusted to control the ion implantation. | 06-27-2013 |
20130287964 | Plasma Potential Modulated ION Implantation System - An ion implantation system including a plasma source, a mask-slit, and a plasma chamber. The plasma source is configured to generate a plasma within the plasma chamber in response to the introduction of a gas therein. The mask-slit is electrically isolated from the plasma chamber. A positive voltage bias is applied to the plasma chamber above a bias potential used to generate the plasma. The positive voltage bias drives the plasma potential to accelerate the ions to a desired implant energy. The accelerated ions pass through an aperture in the mask-slit and are directed toward a substrate for implantation. The mask-slit is electrically isolated from the plasma chamber and is maintained at ground potential with respect to the plasma. | 10-31-2013 |
20130316088 | MAGNETIC RECORDING HEAD MANUFACTURING METHOD - According to one embodiment, a magnetic recording head manufacturing method characterized by includes processes of forming a main pole, forming, on the main pole, an insulating layer having a gap for forming a spin torque oscillator, forming a spin torque oscillator in the gap, and forming an auxiliary magnetic pole on the spin torque oscillator is provided. | 11-28-2013 |
20140004272 | MAGNETIC RECORDING MEDIUM MANUFACTURING METHOD | 01-02-2014 |
20150329957 | DEPOSITION AND PATTERNING USING EMITTED ELECTRONS - A method of creating a localized deposition on a sample in a vacuum chamber having an ion source generating a positively-charged beam of ions and a separate source of primary radiation generating a beam of radiation. An ion beam from the ion source is directed toward the sample, and the primary radiation beam is applied to the sample to generate emitted electrons from the sample. The ion beam and the primary radiation beam are positioned so that the paths of at least some of the ions in the ion beam and the paths of at least some of the emitted electrons from the sample substantially overlap in space near the sample surface. The energy of the ions in the ion beam and the electric potential of the sample are adjusted to substantially prevent deposition of ions on the sample. The energy of the ions in the ion beam and the electric potential of the sample are adjusted so that a portion of the ions in the ion beam are neutralized by the emitted electrons from the sample, and such neutralized ions continue in their respective paths to deposit on the sample. | 11-19-2015 |
20160076132 | STENCIL MASK, STENCIL MASK MANUFACTURING METHOD, AND IMPRINTING METHOD - According to one embodiment, a stencil mask includes a first opening and a second opening, the first opening is provided corresponding to a mark region in a template, the second opening is provided adjacent to the first opening, and the diameter of a circle circumscribing the second opening is smaller than the diameter of a circle circumscribing the first opening. | 03-17-2016 |
20160079034 | FLOWABLE FILM PROPERTIES TUNING USING IMPLANTATION - Species are supplied to a flowable layer over a substrate. A property of the flowable layer is modified by implanting the species to the flowable layer. The property comprises a density, a stress, a film shrinkage, an etch selectivity, or any combination thereof. | 03-17-2016 |
20160189735 | MATERIALS FOR NEAR FIELD TRANSDUCERS AND NEAR FIELD TRANSDUCERS CONTAINING SAME - A method of forming a near field transducer (NFT) layer, the method including depositing a film of a primary element, the film having a film thickness and a film expanse; and implanting at least one secondary element into the primary element, wherein the NFT layer includes the film of the primary element doped with the at least one secondary element. | 06-30-2016 |