Entries |
Document | Title | Date |
20080317968 | TILTED PLASMA DOPING - A plasma doping apparatus includes a chamber and a plasma source that generates ions in the chamber from a dopant gas. A grating is positioned in the chamber. A platen for supporting a target is positioned in the chamber. At least one of the grating and the target are oriented so that dopant ions extracted from the grating impact the target at a non-normal angle of incidence. | 12-25-2008 |
20080317969 | Method of manufacturing magnetic head for perpendicular magnetic recording - A pole layer has an end located in a medium facing surface, the end having: a first side close to a substrate; a second side located opposite to the first side; a third side connecting an end of the first side to an end of the second side; and a fourth side connecting the other end of the first side to the other end of the second side. The second side defines a track width. The end of the pole layer located in the medium facing surface has a width that decreases toward the first side. The pole layer is disposed in a groove of a pole-layer-encasing layer made of a nonmagnetic insulating material, with a nonmagnetic conductive film provided between the encasing layer and the pole layer. The pole layer incorporates: a first layer located closer to the surface of the groove; and a second layer located farther from the surface of the groove. | 12-25-2008 |
20090035481 | PROCESS FOR DIFFUSING TITANIUM AND NITRIDE INTO A MATERIAL HAVING A COATING THEREON AND PRODUCTS PRODUCED THEREBY - A method for diffusing titanium and nitride into a base material having a coating thereon using conventional surface treatments or coatings. The method generally includes the steps of providing a base material having a coating thereon; providing a salt bath which includes sodium dioxide and a salt selected from the group consisting of sodium cyanate and potassium cyanate; dispersing metallic titanium formed by electrolysis of a titanium compound in the bath; heating the salt bath to a temperature ranging from about 430° C. to about 670° C.; and soaking the base material in the salt bath for a time of from about 10 minutes to about 24 hours. In accordance with another aspect of the present invention, titanium and nitride may be diffused into a base material without a coating. The treated base material may further be treated with conventional surface treatments or coatings. | 02-05-2009 |
20090087577 | METHOD TO IMPROVE ELECTRICAL LEAKAGE PERFORMANCE AND TO MINIMIZE ELECTROMIGRATION IN SEMICONDUCTOR DEVICES - Embodiments of methods for improving electrical leakage performance and minimizing electromigration in semiconductor devices are generally described herein. Other embodiments may be described and claimed. | 04-02-2009 |
20090098306 | Method and Apparatus for Surface Processing of a Substrate Using an Energetic Particle Beam - Method and apparatus for processing a substrate with an energetic particle beam. Features on the substrate are oriented relative to the energetic particle beam and the substrate is scanned through the energetic particle beam. The substrate is periodically indexed about its azimuthal axis of symmetry, while shielded from exposure to the energetic particle beam, to reorient the features relative to the major dimension of the beam. | 04-16-2009 |
20090169766 | ION GUN SYSTEM, VAPOR DEPOSITION APPARATUS, AND METHOD FOR PRODUCING LENS - An ion gun system includes an ion gun for irradiating an ion beam; an electric power supply unit for supplying electric power to the ion gun; two mass flow regulators for introducing each of two types of gas in the ion gun; a control unit connected to the electric power supply unit for working as ion gun control means for controlling electric power supplied to the ion gun from the electric power supply unit; and a control unit connected to the mass flow regulators for working as mass flow control means for controlling the flow rate of gas introduced from the mass flow regulators in the ion gun. The control unit as mass flow control means is provided with a function of changing the set value for the flow rate of each of the two types of gas to another set value by changing it stepwise within a range where the ion gun is working stably. Accordingly, shortening of film formation time can be attained. | 07-02-2009 |
20090197010 | Plasma immersion ion implantation using an electrode with edge-effect suppression by a downwardly curving edge - In a plasma reactor, RF bias power is applied from an RF bias power generator to a disk-shaped electrode underlying and insulated from a workpiece and having a circumferential edge underlying a circumferential edge of the workpiece. The RF bias power is sufficient to produce a high RF bias voltage on the workpiece on the order of 0.5-20 kV. Non-uniformity in distribution of plasma across the workpiece is reduced by providing a curvature in a peripheral edge annulus of said electrode whereby the peripheral annulus slopes away from the workpiece support surface. The peripheral edge annulus corresponds to a small fraction of an area of said electrode. The remainder of the electrode encircled by the peripheral annulus has a flat shape. | 08-06-2009 |
20090252886 | SYSTEM AND METHOD FOR NANOTUBE GROWTH VIA ION IMPLANTATION USING A CATALYTIC TRANSMEMBRANE - Ion implantation is used to grow nanotubes out of carbon and other materials. Catalytic material is placed on or in a membrane that physically and possibly environmentally separates an implantation chamber or region from a growth chamber or region. High-energy ions are implanted into the catalytic material from one side to grow nanotobes on an exposed surface in the growth chamber. Ion implantation via the membrane provides for greater flexibility to separate and independently control the implantation and growth processes. | 10-08-2009 |
20090252887 | SYSTEM AND METHOD FOR GROWING NANOTUBES WITH A SPECIFIED ISOTOPE COMPOSITION VIA ION IMPLANTATION USING A CATALYTIC TRANSMEMBRANE - An ion source(s) is configured to generate ions from one or more elements including a plurality of different isotopes or unique molecular combinations of two or more different isotopes from at least one of the selected elements. A selection filter(s) directs a subset of the ions onto a catalytic transmembrane to grow nanotubes of a specific isotope composition on the opposite side of the transmembrane. The nanotubes may be uniformly or selectively doped with dopant atoms. A controller can configure the selection filter(s) to sequentially pass different subsets of ions to form isotope, molecular or element junctions in the growing nanotubes. | 10-08-2009 |
20090252888 | Fine Particle-containing Body, Fine Particle-containing Body Manufacturing Method, Storage Element, Semiconductor Device and Electronic Equipment - A silicon oxide of a film thickness of about 50 nm is formed on a surface of a silicon substrate by thermal oxidation. Silver is implanted into the silicon oxide with implantation energy of about 30 keV by a negative ion implantation method. By subjecting the silicon oxide, into which the silver has been implanted, to heat treatment at a temperature of not lower than 200° C. and lower than the melting point of silver, silver particles are formed. By oxidizing the surface portions of the fine particles by heat treatment in an oxidizing atmosphere, silver oxide is formed as a coating layer. | 10-08-2009 |
20100080928 | Confining Magnets In Sputtering Chamber - A vacuum chamber has multiple wafer positions, and the wafers are positioned by a rotating pallet. Above a wafer position in the chamber there may be a sputtering target, a flat inductively coupled plasma (ICP) coil for etching the wafer and/or promoting sputtering, and a TEOS vapor outlet for forming an oxide film on the wafer. As the pallet rotates, a wafer may first have deposited a thin layer of oxide on walls of a via hole at the TEOS position. A metal layer may then be sputtered in the via hole at the sputtering position, and any pinch-off material may be etched away at an etching position. A magnet behind each target scans back and forth behind the target. Vertical magnet walls substantially surround a sputtering target for confining the sputtered material to an angle that is more normal to the wafer than prior art trajectories to fill narrower vias. | 04-01-2010 |
20100112233 | METHOD FOR MANUFACTURING PIEZOELECTRIC DEVICE - A lower electrode and an adhesive layer made of an insulator are formed on a back surface on the ion implantation layer side of a piezoelectric single crystal substrate. A supporting substrate in which sacrificial layers made of a conductive material have been formed is bonded to the surface of the adhesive layer. By heating the composite body including the piezoelectric single crystal substrate, the lower electrode, the adhesive layer, and the supporting substrate, a layer of the piezoelectric single crystal substrate is detached to form a piezoelectric thin film. A liquid polarizing upper electrode is formed on a detaching interface of the piezoelectric thin film. A pulsed electric field is applied using the polarizing upper electrode and the sacrificial layers as counter electrodes. Consequently, the piezoelectric thin film is polarized. | 05-06-2010 |
20100159153 | ELECTROSTATIC CHUCK SHIELDING MECHANISM - An end station for an ion implantation system is provided, wherein the end station comprises a process chamber configured to receive an ion beam. A load lock chamber is coupled to the process chamber and configured to selectively introduce a workpiece into the process chamber. An electrostatic chuck within the process chamber is configured to selectively translate through the ion beam, and a shield within the process chamber is configured to selectively cover at least a portion of a clamping surface of the electrostatic chuck to protect the clamping surface from one or more contaminants associated with the ion beam. A docking station within the process chamber selectively retains the shield, and a transfer mechanism is configured to transfer a workpiece between the load lock chamber and the electrostatic chuck, and to transfer the shield between the docking station and the clamping surface of the electrostatic chuck. | 06-24-2010 |
20100189917 | CROSS SECTION PROCESSING METHOD AND METHOD OF MANUFACTURING CROSS SECTION OBSERVATION SAMPLE - A cross section processing method to be performed on a sample by irradiating the sample having a layer or a structure of an organic substance on a surface at a cross section processing position thereof with a focused ion beam using a focused ion beam apparatus includes: a protective film forming step for forming a protective film on the surface of the layer or the structure of the organic substance by irradiating the surface of the sample including the cross section processing position with the focused ion beam under the existence of source gas as the protective film; and a cross section processing step for performing cross section processing by irradiating the cross section processing position formed with the protective film with the focused ion beam at a voltage higher than an accelerating voltage in the protective film forming step. | 07-29-2010 |
20100260943 | DUAL SIDED WORKPIECE HANDLING - A method includes positioning at least one dual sided workpiece on an assembly in a process chamber to expose a first side of the at least one dual sided workpiece, treating the first side of the at least one dual sided workpiece, reorienting a portion of the assembly in the process chamber to expose a second side of the at least one dual sided workpiece, the second side opposing the first side, and treating the second side. A processing apparatus including a process chamber defining an enclosed volume and a dual sided workpiece assembly disposed in the enclosed volume is also provided. | 10-14-2010 |
20100291315 | Method of Producing Multilayer Structures Having Controlled Properties - The invention relates to a method of manufacturing ( | 11-18-2010 |
20110045202 | Formation of Carbon-Containing Material - A method includes forming ionic clusters of carbon-containing molecules, which molecules have carbon-carbon sp | 02-24-2011 |
20110097509 | MAGNETIC RECORDING MEDIUM, METHOD OF MANUFACTURING THE SAME AND MAGNETIC RECORDING APPARATUS - According to one embodiment, a magnetic recording medium includes two or more magnetic recording layers stacked on a nonmagnetic substrate, and a carbon-based protective layer formed on the two or more magnetic recording layers, in which an uppermost one of the two or more magnetic recording layers has hardness higher than that of a lower magnetic recording layer. | 04-28-2011 |
20110097510 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - Provided is a plasma processing apparatus including: an electrostatic chuck configured to hold a substrate inside a vacuum container, a pulse power source configured to apply a pulse having positive and negative polarities as a bias voltage and a controller configured to control the positive and negative polarities of the pulse. | 04-28-2011 |
20110097511 | DEPOSITION APPARATUS AND MANUFACTURING METHOD OF THIN FILM DEVICE - [Object] To provide a deposition apparatus | 04-28-2011 |
20110111131 | METHOD FOR PRODUCING A MULTICOMPONENT, POLYMER- AND METAL-CONTAINING LAYER SYSTEM, DEVICE AND COATED ARTICLE - A method for producing layer systems on substrates includes irradiating a first vacuum coating source with an irradiating source. The first vacuum coating source includes a first layer material that is dissolved in a solvent. A second vacuum coating source is applied to the substrate via a chemical vapor deposition process. In this way, novel layer systems and mixed layers, in particular mixed layers of polymers and metals or metal oxides can be applied. | 05-12-2011 |
20110111132 | SYSTEM AND METHOD FOR DEPOSITING COATINGS ON INNER SURFACE OF TUBULAR STRUCTURE - A system and method for depositing coatings on an inner surface of a tubular structure includes at least one pump for creating and maintaining a vacuum in the tubular structure, a meshed electrode adapted to be positioned in a center of the tubular structure, and a biased voltage power supply connected to the meshed electrode. The biased voltage power supply is adapted to apply a negative voltage to the meshed electrode such that the negative voltage causes a hollow cathode discharge inside the meshed electrode. The creation of the hollow cathode discharge causes ions to be drawn out of a mesh on the meshed electrode and accelerate onto an inner surface of the tubular structure, thereby coating the inner surface with a desired coating. | 05-12-2011 |
20110135837 | ELECTROCHROMIC DEVICES HAVING IMPROVED ION CONDUCTING LAYERS - An improved ion conductor layer for use in electrochromic devices and other applications is disclosed. The improved ion-conductor layer is comprised of at least two ion transport layers and a buffer layer, wherein the at least two ion transport layers and the buffer layer alternate within the ion conductor layer such that the ion transport layers are in communication with a first and a second electrode. Electrochromic devices utilizing such an improved ion conductor layer color more deeply by virtue of the increased voltage developed across the ion conductor layer prior to electronic breakdown while reducing the amount of electronic leakage. Also disclosed are methods of making electrochromic devices incorporating the improved ion conductor layer disclosed herein and methods of making ion conductors for use in other applications. | 06-09-2011 |
20110151135 | OPTICAL THIN-FILM DEPOSITION DEVICE AND OPTICAL THIN-FILM FABRICATION METHOD - An optical thin-film vapor deposition apparatus and method are capable of producing an optical thin-film by vapor depositing a vapor deposition substance onto substrates ( | 06-23-2011 |
20110189406 | METHOD OF FORMING GRAPHENE LAYER - The present invention relates to a method of forming a graphene layer, and, more particularly, to a method of forming a graphene layer which is a two-dimensional thin film composed of carbon atoms arranged in a honeycomb-style lattice and having one atom thick and which is put to practical use in the field of electric devices, transparent electrodes or microwave circuits. The method includes the steps of: (a) forming a metal thin film on a substrate; (b) injecting carbon ions into the metal thin film; and (c) heat-treating the carbon ions injected into the metal thin film to form a graphene layer on the metal thin film. The method is advantageous in that a graphene layer is formed by uniformly injecting an accurate amount of carbon ions into a metal thin film depending on the maximum solubility of carbon in the metal thin film and then heat-treating the injected carbon ions, thus uniformly forming the graphene layer on the metal thin film. | 08-04-2011 |
20110223346 | SPUTTERING DEVICE AND SPUTTERING METHOD - A magnetic film having excellent uniformity in in-plane distribution of film thickness or sheet resistance is formed when the film is formed by forming a magnetic field on a processing surface of a substrate ( | 09-15-2011 |
20110236591 | BIPOLAR RECTIFIER POWER SUPPLY - A process for powering an electrical load includes applying a rectified alternating current waveform across the load for a first time period with only a single power supply for at least two half cycles. At least one half cycle of an alternating current waveform of opposite polarity are then applied relative to the rectified alternating current waveform across the load for a second time period. Rectified alternating current waveform is then again applied across the load for at least two half cycles for a third time period to power the electrical load. The rectified alternating current waveform can be applied a direct current offset. A power supply is provided for provided power across the load according to this process. | 09-29-2011 |
20110268889 | Preparation of Mist, Process and Apparatus for Forming New Materials by Mist Gas Discharge - A process for preparing mist, which includes micro/nano solids or liquids, and a process for forming new materials by mist gas discharge, and also an apparatus for forming new materials. The advantages are: as compared to common gases, mists exhibit broader selection range of elements and compounds and broader range of suitable temperature and pressure. Due to the presence of mist AI(m), in a sealed container, the concentration of A in unit volume of mist is far higher than the concentration of A in unit volume of gas. Under specific conditions, the physical/chemical reactions can be carried out more easily, and new materials can be formed with higher efficiency. | 11-03-2011 |
20120021136 | SYSTEM AND METHOD FOR CONTROLLING PLASMA DEPOSITION UNIFORMITY - A plasma process uniformity control apparatus comprises a plasma chamber defined by chamber walls and a plurality of magnetic elements disposed on the outside of the chamber walls. Each of the plurality of magnets is configured to supply a magnetic field directed at respective portions of the plasma inside the chamber to control the uniformity of the plasma directed toward the target substrate. | 01-26-2012 |
20120088035 | PLATEN CONTROL - A system and method for maintain a desired degree of platen flatness is disclosed. A laser system is used to measure the flatness of a platen. The temperature of the platen is then varied to achieve the desired level of flatness. In some embodiments, this laser system is only used during a set up period and the resulting desired temperature is then used during normal operation. In other embodiments, a laser system is used to measure the flatness of the platen, even while the workpiece is being processed. | 04-12-2012 |
20120121816 | PALLET FOR HIGH TEMPERATURE PROCESSING - A generally planar substrate pallet having an front, a back, and pair of sides. The distance between the front and the back and the distance between the sides are significantly longer than the thickness of the substrate pallet. The ratio of vertical deflection of the substrate pallet to the distance between the sides at temperatures used in high temperature processing systems relative to room temperature is less than 1%. | 05-17-2012 |
20120128892 | SURFACE PROCESSING METHOD AND SURFACE PROCESSING APPARATUS - A disclosed surface processing method includes a first processing step, wherein a gas cluster beam is generated from a source material that does not contain nitrogen, and irradiated to a member to be processed, and a second processing step, wherein a nitrogen gas cluster beam is generated and irradiated to the member to be processed. | 05-24-2012 |
20120231177 | Depositing Coatings In Long Hollow Substrates Using A Heated Center Electrode - A method and system for plasma immersion ion processing including providing a hollow substrate having an interior surface defining an interior and a gas feed tube extending through the interior, wherein the gas feed tube is hollow and includes a wall having a plurality of holes defined therein. The method and system may also include heating the gas feed tube to a temperature in the range of 50° C. to 650° C.; supplying a precursor gas to the interior of the hollow substrate through the plurality of holes in the gas feed tube and generating a plasma; and applying a negative bias to the hollow substrate relative to the gas feed tube to draw ions from the plasma to the interior surface to form a coating on the interior surface. | 09-13-2012 |
20120258255 | CONTROL OF FILM COMPOSITION IN CO-SPUTTER DEPOSITION BY USING COLLIMATORS - The present disclosure includes a method for control of a film composition with co-sputter physical vapor deposition. In one implementation, the method includes: positioning first and second PVD guns above a substrate, selecting first and second collimators having first and second sets of physical characteristics, positioning the first and second collimators between the first and second PVD guns and the substrate, sputtering at least one material from the first and second PVD guns through the first and second collimators upon application of a first power and second power, wherein the first PVD gun has a first deposition rate from the first collimator at the first power, and the second PVD gun has a second deposition rate from the second collimator at the second power. | 10-11-2012 |
20120258256 | GUIDED NON-LINE OF SIGHT COATING - A method for applying a vapor deposition coating onto a substrate with a non line of sight or limited line of sight is disclosed. A vapor stream is provided in a chamber that is below atmospheric pressure. The vapor stream is impinged with a working gas that provides a flow that transports the vapor stream. The flow of the working gas is modified with a physical object that directs the flow to achieve a desired coating on the substrate. | 10-11-2012 |
20120258257 | NANOLAYER DEPOSITION PROCESS - A hybrid deposition process of CVD and ALD, called NanoLayer Deposition (NLD) is provided. The NLD process is a cyclic sequential deposition process, including introducing a first plurality of precursors to deposit a thin film and introducing a second plurality of precursors to modify the deposited thin film. The deposition using the first set of precursors is not self limiting and is a function of substrate temperature and process time. The second set of precursors modifies the already deposited film characteristics. The second set of precursors can treat the deposited film, including treatments such as modification of film composition and doping or removal of impurities from the deposited film. The second set of precursors can also deposit another layer on the deposited film. The additional layer can react with the existing layer to form a compound layer, or can have minimum reaction to form a nanolaminate film. | 10-11-2012 |
20130101749 | Method and Apparatus for Enhanced Film Uniformity - In one aspect of the invention, a process chamber is provided. The process chamber includes a plurality of sputter guns with a target and a main magnet affixed to one end of each of the sputter guns. A substrate support is disposed at a distance from the plurality of sputter guns. An auxiliary magnet is disposed near the substrate. The auxiliary magnet surrounds an outer peripheral surface of the substrate support. In alternative embodiments the magnet may be disposed in a plate or holder disposed below or above the substrate support. In additional embodiments, the auxiliary magnet may be embedded within the substrate support. Furthermore, the auxiliary magnet can either be permanent magnets or electromagnets. A method of performing a deposition process is also included. | 04-25-2013 |
20130101750 | High Metal Ionization Sputter Gun - In one aspect of the invention, a process chamber is provided. The chamber includes a plurality of sputter guns with a target affixed to one end of each of the sputter guns. Each of the plurality of sputter guns is coupled to a first power source. The first power source is operable to provide a pulsed power supply to each of the plurality of sputter guns. The pulsed power supply has a duty cycle that is less than 30%. A substrate support disposed at a distance from the plurality of sputter guns is included. The substrate support is coupled to a second power source. The second power source is operable to bias a substrate disposed on the substrate support, wherein the duty cycle of the second power source is synchronized with a duty cycle of the first power source. A method of performing a deposition process is also included. | 04-25-2013 |
20130149459 | METHOD FOR THE SURFACE TREATMENT OF A FLUID PRODUCT DISPENSING DEVICE - A method of surface treating a fluid dispenser device, the method including a step of modifying, by ion implantation using multi-charged and multi-energy ion beams, at least one surface to be treated of at least a portion of the device in contact with the fluid. The modified surface has properties limiting the formation of a biofilm and thus the appearance and/or proliferation of bacteria on the modified surface, the multi-charged ions being selected from helium, boron, carbon, nitrogen, oxygen, neon, argon, krypton, and xenon, ionic implantation being carried out to a depth of 0 μm to 3 μm. | 06-13-2013 |
20130164453 | METHODS OF FORMING LAYERS - A method of forming a layer, the method including providing a substrate having at least one surface adapted for forming a layer thereon; directing a particle beam towards the surface of the substrate, the particle beam including particles, wherein the particle beam has an angle of incidence with respect to the substrate, and is configured so that the particles have implant energies that are not greater than about 100 eV; changing the angle of incidence of the particle beam, the implant energy of the particles, or a combination thereof; and directing the particle beam towards the surface of the substrate a subsequent time, wherein the particles of the particle beam form a layer on the substrate. | 06-27-2013 |
20130189444 | Method of Forming Graphene on A Surface - Methods of forming a graphene material on a surface are presented. A metal material is disposed on a material substrate or material layer and is infused with carbon, for example, by exposing the metal to a carbon-containing vapor. The carbon-containing metal material is annealed to cause graphene to precipitate onto the bottom of the metal material to form a graphene layer between the metal material and the material substrate/material layer and also onto the top and/or sides of the metal material. Graphene material is removed from the top and sides of the metal material and then the metal material is removed, leaving only the graphene layer that was formed on the bottom of the metal material. In some cases graphene material that formed on one or more side of the sides of the metal material is not removed so that a vertical graphene material layer is formed. | 07-25-2013 |
20130202809 | METHODS OF FORMING LAYERS - A method of forming a layer, the method including providing a substrate having at least one surface adapted for deposition thereon; providing a precursor ion beam, the precursor ion beam including ions; neutralizing at least a portion of the ions of the precursor ion beam to form a neutral particle beam, the neutral particle beam including neutral particles; and directing the neutral particle beam towards the surface of the substrate, wherein both the ions and the neutral particles have implant energies of not greater than 100 eV, and the neutral particles of the particle beam form a layer on the substrate. | 08-08-2013 |
20130230664 | METHOD OF PREPARING ORGANIC LIGHT EMITTING DEVICE - A method of preparing an organic light-emitting device includes forming an organic emission unit on a substrate, and forming a thin film encapsulation layer that contacts an environmental element, and that includes at least one inorganic layer including a low temperature viscosity transition (LVT) inorganic material, wherein the inorganic layer is formed using a process including forming a pre-inorganic layer including the LVT inorganic material by providing the LVT inorganic material onto the organic emission unit on which the environmental element is located, performing a first healing process on the pre-inorganic layer at a temperature greater than a viscosity transition temperature of the LVT inorganic material, and performing a second healing process on the pre-inorganic layer having undergone the first healing process to increase a binding force between the environmental element and the LVT inorganic material, and to increase a binding force among the LVT inorganic material. | 09-05-2013 |
20130243966 | METHOD AND DEVICE FOR ION IMPLANTATION - In an ion implantation device and a method for the ion implantation of a substrate, a plasma having an ion density of at least 10 | 09-19-2013 |
20130251913 | ION IMPLANTER SYSTEM INCLUDING REMOTE DOPANT SOURCE, AND METHOD COMPRISING SAME - Dopant source gas supply arrangements and methods are described, wherein one or more dopant source gas supply vessels is contained inside an outer enclosure of an ion implantation system, e.g., in a gas box within such enclosure. In one implementation, a dopant source gas supply vessel is positioned in remote relationship to the gas box of the ion implantation system, with a dopant source gas local vessel in the gas box, and a supply line interconnecting the dopant source gas supply vessel in supply relationship to the dopant source gas local vessel, in which the supply line is adapted to flow dopant source gas from the supply vessel to the local vessel only when the ion implantation system is in a non-operational state, and to be evacuated or filled with an inert pressurized gas when the ion implantation system is in an operational state. | 09-26-2013 |
20130287963 | Plasma Potential Modulated ION Implantation Apparatus - An ion implantation apparatus including a first plasma chamber, a second plasma chamber and an extraction electrode disposed therebetween. The first and second plasma chambers configured to house respective plasmas in response to the introduction of a different feed gases therein. The extraction electrode is electrically isolated from the plasma chamber. An extraction voltage is applied to the first plasma chamber above a bias potential used to generate the plasma therein. The extraction voltage drives the plasma potential to accelerate the ions in the first plasma to a desired implant energy. The accelerated ions pass through an aperture in the extraction electrode and are directed toward a substrate housed within the second plasma chamber for implantation. | 10-31-2013 |
20140030442 | MANUFACTURING METHOD FOR BOUNDARY ACOUSTIC WAVE DEVICE AND BOUNDARY ACOUSTIC WAVE DEVICE - A manufacturing method for a boundary acoustic wave device is capable of certainly providing the boundary acoustic wave device with desired target frequency characteristics. The manufacturing method for the boundary acoustic wave device includes a process for preparing a laminated body that includes a first medium, a second medium laminated on the first medium, and an IDT electrode that is disposed at an interface between the first and second media, and a process for implanting ions from an outer portion of the second medium and adjusting a frequency. | 01-30-2014 |
20140037858 | ANISOTROPIC SURFACE ENERGY MODULATION BY ION IMPLANTATION - Methods of modulating a material's surface energies through the implantation of ions, such as by using a plasma processing apparatus with a plasma sheath modifier, are disclosed. Two or more ion implants may be performed, where the implant regions of two of the ion implants overlap. The species implanted by a first implant may increase the hydrophobicity of the surface, wherein the species implanted by the second implant may decrease the hydrophobicity of the surface. In this way, a workpiece can be implanted such that different portions of its surface have different surface energies. | 02-06-2014 |
20140072721 | Method for Modifying a Surface of a Substrate using Ion Bombardment - A process is described for modification of a surface of a substrate by ion bombardment, in which the ions are produced by means of a magnetic field-assisted glow discharge in a process gas. The magnetic field-assisted glow discharge is produced by means of a magnetron having an electrode and at least one magnet for production of the magnetic field. The process gas has at least one electronegative constituent, such that negative ions are produced in the magnetic field-assisted glow discharge, and the negative ions which are produced at the surface of the electrode are accelerated in the direction of the substrate by an electrical voltage applied to the electrode. | 03-13-2014 |
20140154424 | ROLL-TO-ROLL SPUTTERING METHOD - A roll-to-roll sputtering method transports a flexible substrate wound on an unwinder roll to a depositing part, forms a deposited film on the flexible substrate, and winds the flexible substrate on a winder roll. The depositing part includes a first depositing part. The first depositing part includes a first sputtering part which deposits a first target material on one surface of the flexible substrate and a heater which is disposed at a side of the other surface of the flexible substrate to heat the flexible substrate. | 06-05-2014 |
20140161987 | IMPLANT METHOD AND IMPLANTER BY USING A VARIABLE APERTURE - A variable aperture within an aperture device is used to shape the ion beam before the substrate is implanted by shaped ion beam, especially to finally shape the ion beam in a position right in front of the substrate. Hence, different portions of a substrate, or different substrates, can be implanted respectively by different shaped ion beams without going through using multiple fixed apertures or retuning the ion beam each time. In other words, different implantations may be achieved respectively by customized ion beams without high cost (use multiple fixed aperture devices) and complex operation (retuning the ion beam each time). Moreover, the beam tune process for acquiring a specific ion beam to be implanted may be accelerated, to be faster than using multiple fixed aperture(s) and/or retuning the ion beam each time, because the adjustment of the variable aperture may be achieved simply by mechanical operation. | 06-12-2014 |
20140199492 | ION IMPLANTER AND METHOD OF OPERATING ION IMPLANTER - An ion implanter that introduces a process gas into an ion source, extracts a ribbon-shaped ion beam from the ion source using an extraction electrode system made up of multiple electrodes, and uses the ion beam to irradiate a substrate disposed in a processing chamber during ion implantation processing, and that also introduces a cleaning gas into the ion source and performs cleaning inside said ion source at times other than during ion implantation processing, wherein during the re-initiation of the ion beam upon termination of cleaning, a predetermined voltage is applied to the extraction electrode system and the operating parameters of the ion source are then set to values corresponding to the implantation recipe of the substrate to be processed. | 07-17-2014 |
20140205762 | METHOD FOR DEPOSITING FILM AND FILM DEPOSITION SYSTEM - A method for depositing a film includes depositing an oil repellent film having an enhanced abrasion resistance properties and which is suitable for practical use. A film deposition system, wherein a substrate holder having a substrate holding surface for holding a plurality of substrates is provided rotatably to inside a vacuum container, can include an ion source provided to inside the vacuum container to have a configuration and in an arrangement and/or a direction, by which an ion beam can be irradiated only to a partial region of the substrate holding surface. A deposition source can be provided to inside the vacuum container such that a film deposition material of an oil repellent film can be supplied to the whole region of the substrate holding surface. An operation of the ion source can be stopped before starting operation of the deposition source. | 07-24-2014 |
20140212595 | MAGNETIC FIELD FLUCTUATION FOR BEAM SMOOTHING - The time-averaged ion beam profile of an ion beam for implanting ions on a work piece may be smoothed to reduce noise, spikes, peaks, and the like and to improve dosage uniformity. Auxiliary magnetic field devices, such as electromagnets, may be located along an ion beam path and may be driven by periodic signals to generate a fluctuating magnetic field to smooth the ion beam profile (i.e., beam current density profile). The auxiliary magnetic field devices may be positioned outside the width and height of the ion beam, and may generate a non-uniform fluctuating magnetic field that may be strongest near the center of the ion beam where the highest concentration of ions may be positioned. The fluctuating magnetic field may cause the beam profile shape to change continuously, thereby averaging out noise over time. | 07-31-2014 |
20140272178 | MULTI-PLATEN ION IMPLANTER AND METHOD FOR IMPLANTING MULTIPLE SUBSTRATES SIMULTANEOUSLY - An ion implantation apparatus and a method for ion implantation provides for implanting multiple substrates simultaneously. The different substrates are on corresponding platens within an ion implantation chamber or they may be positioned on separate substrate holders on a single oversized platen. The substrates and platen or platens, are translatable with respect to an ion beam, the individual substrates are rotatable and the position of the substrates relative to one another in the ion implantation chamber are movable. By rotating, translating and repositioning substrates during the ion implantation process, the entirety of all substrates are implanted by an ion beam even when the ion beam has a relatively small footprint and a relatively short scan length, compared to the diameters of the substrates undergoing implantation. | 09-18-2014 |
20140272179 | APPARATUS AND TECHNIQUES FOR ENERGETIC NEUTRAL BEAM PROCESSING - A processing system includes a plasma source chamber to generate a plasma; an extraction assembly adjacent the plasma source chamber having an extraction plate and a beam modifier, the extraction plate defining an extraction plate plane and an aperture to extract ions from the plasma source chamber into an ion beam, the beam modifier adjacent to the extraction plate and operative to adjust an ion beam trajectory angle of the ion beam with respect to a perpendicular to the extraction plate plane; and a neutralizer to receive the ion beam extracted by the extraction assembly, convert the ion beam to a neutral beam and direct the neutral beam towards a substrate, the neutralizer having one or more neutralizer plates arranged at a neutralizer plate angle, the extraction assembly and the neutralizer interoperative to provide an ion beam incident angle of the ion beam with respect to the neutralizer plates. | 09-18-2014 |
20140272180 | Apparatus and Method for Improved Perpendicular Recording Medium Using Ion Implantation in a Magnetic Field - In one embodiment, a system for treating a magnetic layer includes an ion source to generate an ion beam containing ions of a desired species. The system may also include a magnetic alignment apparatus downstream of the ion source and proximate to the substrate, wherein the magnetic alignment apparatus is operable to apply a magnetic field to the magnetic layer in the substrate along a direction out of plane relative to the magnetic layer. | 09-18-2014 |
20140272181 | APPARATUS AND METHOD FOR ION IMPLANTATION IN A MAGNETIC FIELD - In one embodiment, a system for treating a magnetic layer includes an ion generating apparatus for directing an ion beam to the substrate and a magnetic alignment apparatus downstream of the ion generating apparatus and proximate to the substrate and operative to generate a magnetic field that intercepts the substrate in an out of plane orientation with respect to a plane of the substrate. The magnetic alignment apparatus and ion generating apparatus generate a process region in which the ion beam and magnetic field overlap. | 09-18-2014 |
20140272182 | Method For Implementing Low Dose Implant In A Plasma System - Methods of decreasing the dose per pulse implanted into a workpiece disposed in a process chamber are disclosed. According to one embodiment, the plasma is generated by a RF power supply. This RF power supply may have two different modes, a first, referred to as continuous wave mode, where the RF power supply is continuously outputting a voltage. This mode allows creation of the plasma within the process chamber. During the second mode, referred to as pulsed plasma mode, the RF power supply outputs two different power levels. The platen bias voltage may be a more negative value when the lower RF power level is being applied. This pulsed (or multi-setpoint) plasma also assists in reducing dopant deposition on the wafer during the time when CW plasma is on but the bias voltage pulse is in the off-state. In a further embodiment, a delay is introduced between the transition to the pulsed plasma mode and the initiation of the implanting process. In yet another embodiment the plasma is generated at a location in the chamber more judicious to reducing the dose impinging on the wafer, thereby increasing the process time to allow adequate control of the process. | 09-18-2014 |
20140302252 | Low Energy Ion Milling or Deposition - Samples to be imaged in a Transmission Electron Microscope must be thinned to form a lamella with a thickness of, for example, 20 nm. This is commonly done by sputtering with ions in a charged particle apparatus equipped with a Scanning Electron Microscope (SEM) column, a Focused Ion Beam (FIB) column, and one or more Gas Injection Systems (GISses). A problem that occurs is that a large part of the lamella becomes amorphous due to bombardment by ions, and that ions get implanted in the sample. The invention provides a solution by applying a voltage difference between the capillary of the GIS and the sample, and directing a beam of ions or electrons to the jet of gas. The beam ionizes gas that is accelerated to the sample, where (when using a low voltage between sample and GIS) low energy milling occurs, and thus little sample thickness becomes amorphous. | 10-09-2014 |
20140329025 | SOLID PRECURSOR-BASED DELIVERY OF FLUID UTILIZING CONTROLLED SOLIDS MORPHOLOGY - Apparatus and method for volatilizing a source reagent susceptible to particle generation or presence of particles in the corresponding source reagent vapor, in which such particle generation or presence is suppressed by structural or processing features of the vapor generation system. Such apparatus and method are applicable to liquid and solid source reagents, particularly solid source reagents such as metal halides, e.g., hafnium chloride. The source reagent in one specific implementation is constituted by a porous monolithic bulk form of the source reagent material. The apparatus and method of the invention are usefully employed to provide source reagent vapor for applications such as atomic layer deposition (ALD) and ion implantation. | 11-06-2014 |
20140356547 | SYSTEM AND METHOD OF IMPROVING IMPLANT QUALITY IN A PLASMA-BASED IMPLANT SYSTEM - A system and method for the removal of deposited material from the walls of a plasma chamber is disclosed. The system may have two modes; a normal operating mode and a cleaning mode. | 12-04-2014 |
20150037511 | ALTERNATE MATERIALS AND MIXTURES TO MINIMIZE PHOSPHORUS BUILDUP IN IMPLANT APPLICATIONS - Systems and processes for utilizing phosphorus fluoride in place of or in combination with, phosphine as a phosphorus dopant source composition, to reduce buildup of unwanted phosphorus deposits in ion implanter systems. The phosphorus fluoride may comprise PF3 and/or PF5. Phosphorus fluoride and phosphine may be co-flowed to the ion implanter, or each of such phosphorus dopant source materials can be alternatingly and sequentially flowed separately to the ion implanter, to achieve reduction in unwanted buildup of phosphorus solids in the implanter, relative to a corresponding process system utilizing only phosphine as the phosphorus dopant source material. | 02-05-2015 |
20150056380 | ION SOURCE OF AN ION IMPLANTER - An ion source uses at least one induction coil to generate ac magnetic field to couple rf/VHF power into a plasma within a vessel, where the excitation coil may be a single set of turns each turn having lobes or multiple separate sets of windings. The excitation coil is positioned outside and proximate that side of the vessel that is opposite to the extraction slit, and elongated parallel to the length dimension of the extraction slit. The conducting shield(s) positioned outside or integrated with the well of the vessel are used to block the capacitive coupling to the plasma and/or to collect any rf/VHF current may be coupled into the plasma. The conducting shield positioned between the vessel and the coil set can either shield the plasma from capacitive coupling from the excitation coils, or be tuned to have a higher rf/VHF voltage to ignite or clean the source. | 02-26-2015 |
20150118410 | DEPOSITION DEVICE AND DEPOSITION METHOD - A deposition device that deposits material particles includes an ionization section that ionizes the material particles utilizing a photoelectric effect in a reaction chamber to which the material particles are supplied, and an electrode section that guides the ionized material particles to a given area utilizing a Coulomb force. | 04-30-2015 |
20150299842 | CHARGED PARTICLE DEVICE AND WIRING METHOD - An object of the present invention is to provide: a wiring method in which wiring is performed in a vacuum chamber of a charged particle device without using gas deposition or the like; and a charged particle device. | 10-22-2015 |
20150354056 | Method Of Improving Ion Beam Quality In A Non-Mass-Analyzed Ion Implantation System - A method of processing a workpiece is disclosed, where the plasma chamber is first coated using a conditioning gas and optionally, a co-gas. The conditioning gas, which is disposed within a conditioning gas container may comprise a hydride of the desired dopant species and a filler gas, where the filler gas is a hydride of a Group 4 or Group 5 element. The remainder of the conditioning gas container may comprise hydrogen gas. Following this conditioning process, a feedgas, which comprises fluorine and the desired dopant species, is introduced to the plasma chamber and ionized. Ions are then extracted from the plasma chamber and accelerated toward the workpiece, where they are implanted without being first mass analyzed. In some embodiments, the desired dopant species may be boron. | 12-10-2015 |
20160002784 | METHOD AND APPARATUS FOR DEPOSITING A MONOLAYER ON A THREE DIMENSIONAL STRUCTURE - In one embodiment, a processing apparatus may include a plasma chamber configured to generate a plasma; a process chamber adjacent the plasma chamber and configured to house a substrate that defines a substrate plane; an extraction system adjacent the plasma chamber and configured to direct an ion beam from the plasma to the substrate, the ion beam forming a non-zero angle with respect to a perpendicular to the substrate plane; and a molecular chamber adjacent the process chamber, isolated from the plasma chamber and configured to deliver a molecular beam to the substrate, wherein the ion beam and molecular beam are alternately delivered to the substrate to form a monolayer comprising species from the ion beam and molecular beam. | 01-07-2016 |
20160024646 | MULTI-STEP ION IMPLANTATION - Systems and methods for strengthening a sapphire part are described herein. One embodiment may take the form of a method including orienting a first surface of a sapphire member relative to an ion implantation device and performing a first implantation step. The implanting step may include directing ions at the first surface of the sapphire member to embed them under the first surface. The systems and methods may also include one or more of heating the sapphire member to diffuse the implanted ions into deeper layers of sapphire member, cooling the sapphire member, and performing at least a second implantation step directing ions at the first surface of the sapphire member to embed the ions under the first surface. | 01-28-2016 |
20160076141 | MANUFACTURING METHOD OF HARD SLIDING MEMBER - A manufacturing method of a hard sliding member of the present invention includes a surface treatment step of surface-treating a surface of a substrate, and a carbon film formation step of forming a carbon film on the surface of the substrate by performing arc ion plating with using a target containing carbon. In the carbon film formation step, formation of the carbon film is started by performing the arc ion plating while introducing a hydrocarbon gas, then an introduction amount of the hydrocarbon gas is reduced and the arc ion plating is continued so as to form an intermediate layer, and a surface layer made of ta-C is formed on a surface. | 03-17-2016 |
20160145737 | PROCESSING APPARATUS, ION IMPLANTATION APPARATUS AND ION IMPLANTATION METHOD - An ion implantation method includes generating a first ion beam and a second ion beam, the first ion beam having a different configuration from the second ion beam. The method further includes scanning and directing the first ion beam along a first path toward a workpiece to perform ion implantation on the workpiece. The method alternatively includes directing the second ion beam along a second path toward the workpiece to perform ion implantation on the workpiece. The first path is different from the second path. | 05-26-2016 |
20160203950 | METHOD AND ION IMPLANTER FOR LOW TEMPERATURE IMPLANTATION | 07-14-2016 |