Inventors list

Assignees list

Classification tree browser

Top 100 Inventors

Top 100 Assignees

Ion plating or implantation

Subclass of:

427 - Coating processes


Patent class list (only not empty are listed)

Deeper subclasses:

Class / Patent application numberDescriptionNumber of patent applications / Date published
427526000 Nonuniform or patterned ion plating or ion implanting (e.g., mask, etc.) 14
427527000 Silicon present in substrate, plating, or implanted layer 10
427529000 Inorganic oxide containing plating or implanted material 7
427528000 Metal or metal alloy substrate 5
20120114870MANUFACTURING METHOD OF NOBLE METAL PLATING LAYER - The invention discloses a manufacturing method of a noble metal plating layer comprising the following steps: preparing a base material which is an alloy including a nickel base and at least one element with high oxidation valence on an object to be plated; soaking the object to be plated in a plating solution including pre-plating noble metal ions to make the element in the base material to be dissolved in the plating solution to obtain at least one ion with high oxidation valence; performing a chemical displacement reaction among the base material, the at least one ion having high oxidation valence, and the pre-plating noble metal ion in the plating solution to precipitate the pre-plating noble metal ion onto a surface of the object to be plated to form a noble metal plating layer.05-10-2012
20080213503Life Extension Of Chromium Coatings And Chromium Alloys - Substrates comprising a surface comprising chromium, said surface being adapted to exhibit reduced coefficient of friction and/or increased hardness.09-04-2008
20090252889NANOPIN MANUFACTURING METHOD AND NANOMETER SIZED TIP ARRAY BY UTILIZING THE METHOD - Methods to manufacture metal nanopins and metal oxide nanopins are disclosed. Metal nanopins are fabricated on a metal foil by capillaritron plasma source dry etching. The aspect ratio and the density of metal nanopins are controlled by adjusting the temperature of the metal foil during ion beam dry etching. The end radius of metal nanopins less than 10 nm and the aspect ratio of metal nanopins between 25 and 30 can be achieved. Besides, metal oxide nanopins are fabricated by ion implantation and thermal oxidation. The metal foil is implanted with ions and then thermally oxidized to form the metal oxide nanopins. It shows that the metal oxide nanopins fabricated with oxygen implantation exhibit better field emission properties.10-08-2009
20110236592METHOD FOR TREATING A METAL ELEMENT WITH ION BEAM - The present invention relates to a method for treating a metal element subjected to an ion beam, where: the ions of the beam are selected from among boron, carbon, nitrogen, and oxygen; the ion acceleration voltage, greater than or equal to 10 kV, and the power of the beam, between 1 W and 10 kW, as well as the ion load per surface unit are selected so as to enable the implantation of ions onto an implantation area with a thickness e09-29-2011
20130101751INSERTION OF LITHIUM INTO ELECTROCHROMIC DEVICES AFTER COMPLETION - The present disclosure describes methods of inserting lithium into an electrochromic device after completion. In the disclosed methods, an ideal amount of lithium can be added post-fabrication to maximize or tailor the free lithium ion density of a layer or the coloration range of a device. Embodiments are directed towards a method to insert lithium into the main device layers of an electrochromic device as a post-processing step after the device has been manufactured. In an embodiment, the methods described are designed to maximize the coloration range while compensating for blind charge loss.04-25-2013
427525000 Organic material present in substrate, plating, or implanted layer 5
20130064989PLASMA PROCESSING OF WORKPIECES TO FORM A COATING - A surface of an insulating workpiece is implanted to form either hydrophobic or hydrophilic implanted regions. A conductive coating is deposited on the workpiece. The coating may be a polymer in one instance. This coating preferentially forms either on the implanted regions if these implanted regions are hydrophilic or on the non-implanted regions if the implanted regions are hydrophobic.03-14-2013
20130164454METHODS OF FORMING LAYERS - A method of forming a layer, the method including providing a substrate having at least one surface adapted for deposition thereon; and directing a particle beam towards the surface of the substrate, the particle beam including small molecule molecular species, wherein the small molecule molecular species break apart upon interaction with atoms at the substrate into atomic components, each of the atomic components having implant energies from about 20 eV to about 100 eV to form a layer.06-27-2013
20090263591MULTI-COMPONENT COMPOSITE FILM METHOD FOR PREPARING THE SAME - The present invention provides a multi-component composite film comprising a) polymer support layer, and b) porous gellable polymer layer which is formed on one side or both sides of the support layer of a), wherein the support film of a) and the gellable polymer layer of b) are unified without the interface, a method for preparing the same, and a polymer electrolyte system applied the same.10-22-2009
20120156388METAL-COATED POLYIMIDE FILM - A metal-coated polyimide film is excellent in long-term adhesion reliability, exhibits various dimensional stabilities, and is particularly suitable for FPC, COF and TAB applications. The metal-coated polyimide film comprises a non-thermoplastic polyimide film; and a metal layer being directly formed on one surface or both surfaces of the non-thermoplastic polyimide film without using an adhesive, wherein the non-thermoplastic polyimide film contains a non-thermoplastic polyimide resin having a thermoplastic polyimide block component.06-21-2012
20080226835Production Method of Material Film and Production Apparatus of Material Film - According to a containing-fullerene production method by the background art, containment target ions obtained by ionizing containment target atoms have been irradiated to empty fullerene within a vacuum vessel. This has resulted in a problem of a lower formation efficiency of containing-fullerene, in case of forming containing-fullerene which internally contains an atom larger than a six-membered ring of fullerene. It is thus devised to irradiate ions having larger diameters and masses to a fullerene film, simultaneously with irradiation of containment target ions thereto. Since ions having larger masses collide with fullerene molecules, the fullerene molecules are largely deformed and openings thereof are enlarged. Containment target ions are caused to enter cages of fullerene molecules, thereby increasing a probability of formation of containing-fullerene.09-18-2008
427530000 Inorganic metal compound present in plating or implanted material (e.g., nitrides, carbides, borides, etc.) 4
20100104766METHOD FOR USE WITH A COATING PROCESS - A method for use with a coating process includes depositing a ceramic coating on a substrate within a coating chamber. Prior to depositing the ceramic coating, an electron beam source is used to heat a ceramic material. The ceramic material radiates heat to heat a substrate to an oxidation temperature to form an oxide layer on the substrate. A desired evaporation rate of the ceramic material is established during the heating to thereby provide an improved ceramic coating.04-29-2010
20090162565Method for Forming Tantalum Nitride Film - A tantalum nitride film is formed by introducing a raw gas consisting of a coordination compound constituted by an elemental tantalum (Ta) having a coordinated ligand represented by the general formula: N═(R, R′) (in the formula, R and R′ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms) and an oxygen atom-containing gas into a film-forming chamber to make them react with one another on a substrate and to thus form a compound represented by the formula: TaO06-25-2009
20090098307MANUFACTURING METHOD FOR FAR-INFRARED IRRADIATING SUBSTRATE - A manufacturing method for a far-infrared irradiating substrate is provided. The manufacturing method comprises steps of providing a substrate, providing a far-infrared irradiating material and evaporating the far-infrared irradiating material to form a thin film onto the substrate. The far-infrared irradiating substrate provided by the present invention not only has a high emission coefficient of far-infrared ray, but also do not cause a potential exposure of an ionizing radiation.04-16-2009
20120070589CREATION OF MAGNETIC FIELD (VECTOR POTENTIAL) WELL FOR IMPROVED PLASMA DEPOSITION AND RESPUTTERING UNIFORMITY - A physical vapor deposition (PVD) system includes a chamber and a target arranged in a target region of the chamber. A pedestal has a surface for supporting a substrate and is arranged in a substrate region of the chamber. A transfer region is located between the target region and the substrate region. N coaxial coils are arranged in a first plane parallel to the surface of the pedestal and below the pedestal. M coaxial coils are arranged adjacent to the pedestal. N currents flow in a first direction in the N coaxial coils, respectively, and M currents flow in a second direction in the M coaxial coils that is opposite to the first direction, respectively.03-22-2012
427524000 With simultaneous sputter etching of substrate 2
20110293847Particle-Beam Induced Processing Using Liquid Reactants - A system or method of charge particle beam induced materials processing is disclosed. A charged particle beam (electron or ion) is focused at the interface of a substrate and a bulk liquid. The beam induces a localized chemical reaction that results in deposition or etching of deterministic micro- or nano-scale structures. The bulk liquid reactants permit the deposition and etching of metals, semiconductors, and insulators. A charged particle transparent membrane separates the liquid reactant from the vacuum chamber in which the beam is transmitted. In many cases, bulk liquid reactants permit processing of materials with much higher purity that of the prior art and permit processing of materials previously unavailable in charged particle beam processes.12-01-2011
20120027946DIRECT DEPOSIT AND REMOVAL OF NANOSCALE CONDUCTORS - A method and apparatus for depositing and removing nanoscale conductors. A magneto-optical trap ion source (MOTIS) creates a beam of focused metal ions that either deposit directly at low energy (<0.5 keV) or sputter material away at high energy (>2 keV). By scanning the beam, layers of material may be built up into a desired pattern. By employing a MOTIS as the source of ions for the beam, and then directing that beam through an appropriate ion-optical column, isotopically pure samples may be deposited into patterns with nanoscale feature sizes. The ability to quickly remove material, and deposit isotopically pure metals is desirable, for instance, during the circuit edit stage of integrated circuit manufacture.02-02-2012
427531000 Metal or metal alloy plating or implanted material 1
20110200760METHOD FOR MANUFACTURING THE COLOR CONTROLLED SAPPIRE - Disclosed herein is a method of manufacturing a color-controlled sapphire, comprising: vaporizing a metal material, irradiating the vaporized metal material with electron beams or high-frequency waves to form the vaporized metal material into a plasma state, and then implanting the metal ions into a sapphire by extracting the metal ions from the plasma and accelerating the metal ions (step 1); and heat-treating the sapphire implanted with the metal plasma ions in an oxygen atmosphere or in air (step 2). According to the method of manufacturing a sapphire of the present invention, a sapphire, which can exhibit various colors, can be manufactured by implanting the ions, which can cause optical band gap changes into the sapphire, and a sapphire, which cannot be damaged by radiation and can exhibit colors uniformly, can be manufactured by conducting heat treatment under an oxygen atmosphere. Further, according to the present invention, a sapphire, which cannot be damaged by radiation and can be made to exhibit uniform colors, can be manufactured by performing the above processes repeatedly.08-18-2011
20100159153ELECTROSTATIC CHUCK SHIELDING MECHANISM - An end station for an ion implantation system is provided, wherein the end station comprises a process chamber configured to receive an ion beam. A load lock chamber is coupled to the process chamber and configured to selectively introduce a workpiece into the process chamber. An electrostatic chuck within the process chamber is configured to selectively translate through the ion beam, and a shield within the process chamber is configured to selectively cover at least a portion of a clamping surface of the electrostatic chuck to protect the clamping surface from one or more contaminants associated with the ion beam. A docking station within the process chamber selectively retains the shield, and a transfer mechanism is configured to transfer a workpiece between the load lock chamber and the electrostatic chuck, and to transfer the shield between the docking station and the clamping surface of the electrostatic chuck.06-24-2010
20090035481PROCESS FOR DIFFUSING TITANIUM AND NITRIDE INTO A MATERIAL HAVING A COATING THEREON AND PRODUCTS PRODUCED THEREBY - A method for diffusing titanium and nitride into a base material having a coating thereon using conventional surface treatments or coatings. The method generally includes the steps of providing a base material having a coating thereon; providing a salt bath which includes sodium dioxide and a salt selected from the group consisting of sodium cyanate and potassium cyanate; dispersing metallic titanium formed by electrolysis of a titanium compound in the bath; heating the salt bath to a temperature ranging from about 430° C. to about 670° C.; and soaking the base material in the salt bath for a time of from about 10 minutes to about 24 hours. In accordance with another aspect of the present invention, titanium and nitride may be diffused into a base material without a coating. The treated base material may further be treated with conventional surface treatments or coatings.02-05-2009
20130164453METHODS OF FORMING LAYERS - A method of forming a layer, the method including providing a substrate having at least one surface adapted for forming a layer thereon; directing a particle beam towards the surface of the substrate, the particle beam including particles, wherein the particle beam has an angle of incidence with respect to the substrate, and is configured so that the particles have implant energies that are not greater than about 100 eV; changing the angle of incidence of the particle beam, the implant energy of the particles, or a combination thereof; and directing the particle beam towards the surface of the substrate a subsequent time, wherein the particles of the particle beam form a layer on the substrate.06-27-2013
20100189917CROSS SECTION PROCESSING METHOD AND METHOD OF MANUFACTURING CROSS SECTION OBSERVATION SAMPLE - A cross section processing method to be performed on a sample by irradiating the sample having a layer or a structure of an organic substance on a surface at a cross section processing position thereof with a focused ion beam using a focused ion beam apparatus includes: a protective film forming step for forming a protective film on the surface of the layer or the structure of the organic substance by irradiating the surface of the sample including the cross section processing position with the focused ion beam under the existence of source gas as the protective film; and a cross section processing step for performing cross section processing by irradiating the cross section processing position formed with the protective film with the focused ion beam at a voltage higher than an accelerating voltage in the protective film forming step.07-29-2010
20090087577METHOD TO IMPROVE ELECTRICAL LEAKAGE PERFORMANCE AND TO MINIMIZE ELECTROMIGRATION IN SEMICONDUCTOR DEVICES - Embodiments of methods for improving electrical leakage performance and minimizing electromigration in semiconductor devices are generally described herein. Other embodiments may be described and claimed.04-02-2009
20100112233METHOD FOR MANUFACTURING PIEZOELECTRIC DEVICE - A lower electrode and an adhesive layer made of an insulator are formed on a back surface on the ion implantation layer side of a piezoelectric single crystal substrate. A supporting substrate in which sacrificial layers made of a conductive material have been formed is bonded to the surface of the adhesive layer. By heating the composite body including the piezoelectric single crystal substrate, the lower electrode, the adhesive layer, and the supporting substrate, a layer of the piezoelectric single crystal substrate is detached to form a piezoelectric thin film. A liquid polarizing upper electrode is formed on a detaching interface of the piezoelectric thin film. A pulsed electric field is applied using the polarizing upper electrode and the sacrificial layers as counter electrodes. Consequently, the piezoelectric thin film is polarized.05-06-2010
20100080928Confining Magnets In Sputtering Chamber - A vacuum chamber has multiple wafer positions, and the wafers are positioned by a rotating pallet. Above a wafer position in the chamber there may be a sputtering target, a flat inductively coupled plasma (ICP) coil for etching the wafer and/or promoting sputtering, and a TEOS vapor outlet for forming an oxide film on the wafer. As the pallet rotates, a wafer may first have deposited a thin layer of oxide on walls of a via hole at the TEOS position. A metal layer may then be sputtered in the via hole at the sputtering position, and any pinch-off material may be etched away at an etching position. A magnet behind each target scans back and forth behind the target. Vertical magnet walls substantially surround a sputtering target for confining the sputtered material to an angle that is more normal to the wafer than prior art trajectories to fill narrower vias.04-01-2010
20100291315Method of Producing Multilayer Structures Having Controlled Properties - The invention relates to a method of manufacturing (11-18-2010
20080317969Method of manufacturing magnetic head for perpendicular magnetic recording - A pole layer has an end located in a medium facing surface, the end having: a first side close to a substrate; a second side located opposite to the first side; a third side connecting an end of the first side to an end of the second side; and a fourth side connecting the other end of the first side to the other end of the second side. The second side defines a track width. The end of the pole layer located in the medium facing surface has a width that decreases toward the first side. The pole layer is disposed in a groove of a pole-layer-encasing layer made of a nonmagnetic insulating material, with a nonmagnetic conductive film provided between the encasing layer and the pole layer. The pole layer incorporates: a first layer located closer to the surface of the groove; and a second layer located farther from the surface of the groove.12-25-2008
20090098306Method and Apparatus for Surface Processing of a Substrate Using an Energetic Particle Beam - Method and apparatus for processing a substrate with an energetic particle beam. Features on the substrate are oriented relative to the energetic particle beam and the substrate is scanned through the energetic particle beam. The substrate is periodically indexed about its azimuthal axis of symmetry, while shielded from exposure to the energetic particle beam, to reorient the features relative to the major dimension of the beam.04-16-2009
20080317968TILTED PLASMA DOPING - A plasma doping apparatus includes a chamber and a plasma source that generates ions in the chamber from a dopant gas. A grating is positioned in the chamber. A platen for supporting a target is positioned in the chamber. At least one of the grating and the target are oriented so that dopant ions extracted from the grating impact the target at a non-normal angle of incidence.12-25-2008
20090252888Fine Particle-containing Body, Fine Particle-containing Body Manufacturing Method, Storage Element, Semiconductor Device and Electronic Equipment - A silicon oxide of a film thickness of about 50 nm is formed on a surface of a silicon substrate by thermal oxidation. Silver is implanted into the silicon oxide with implantation energy of about 30 keV by a negative ion implantation method. By subjecting the silicon oxide, into which the silver has been implanted, to heat treatment at a temperature of not lower than 200° C. and lower than the melting point of silver, silver particles are formed. By oxidizing the surface portions of the fine particles by heat treatment in an oxidizing atmosphere, silver oxide is formed as a coating layer.10-08-2009
20090252886SYSTEM AND METHOD FOR NANOTUBE GROWTH VIA ION IMPLANTATION USING A CATALYTIC TRANSMEMBRANE - Ion implantation is used to grow nanotubes out of carbon and other materials. Catalytic material is placed on or in a membrane that physically and possibly environmentally separates an implantation chamber or region from a growth chamber or region. High-energy ions are implanted into the catalytic material from one side to grow nanotobes on an exposed surface in the growth chamber. Ion implantation via the membrane provides for greater flexibility to separate and independently control the implantation and growth processes.10-08-2009
20100260943DUAL SIDED WORKPIECE HANDLING - A method includes positioning at least one dual sided workpiece on an assembly in a process chamber to expose a first side of the at least one dual sided workpiece, treating the first side of the at least one dual sided workpiece, reorienting a portion of the assembly in the process chamber to expose a second side of the at least one dual sided workpiece, the second side opposing the first side, and treating the second side. A processing apparatus including a process chamber defining an enclosed volume and a dual sided workpiece assembly disposed in the enclosed volume is also provided.10-14-2010
20090169766ION GUN SYSTEM, VAPOR DEPOSITION APPARATUS, AND METHOD FOR PRODUCING LENS - An ion gun system includes an ion gun for irradiating an ion beam; an electric power supply unit for supplying electric power to the ion gun; two mass flow regulators for introducing each of two types of gas in the ion gun; a control unit connected to the electric power supply unit for working as ion gun control means for controlling electric power supplied to the ion gun from the electric power supply unit; and a control unit connected to the mass flow regulators for working as mass flow control means for controlling the flow rate of gas introduced from the mass flow regulators in the ion gun. The control unit as mass flow control means is provided with a function of changing the set value for the flow rate of each of the two types of gas to another set value by changing it stepwise within a range where the ion gun is working stably. Accordingly, shortening of film formation time can be attained.07-02-2009
20110111132SYSTEM AND METHOD FOR DEPOSITING COATINGS ON INNER SURFACE OF TUBULAR STRUCTURE - A system and method for depositing coatings on an inner surface of a tubular structure includes at least one pump for creating and maintaining a vacuum in the tubular structure, a meshed electrode adapted to be positioned in a center of the tubular structure, and a biased voltage power supply connected to the meshed electrode. The biased voltage power supply is adapted to apply a negative voltage to the meshed electrode such that the negative voltage causes a hollow cathode discharge inside the meshed electrode. The creation of the hollow cathode discharge causes ions to be drawn out of a mesh on the meshed electrode and accelerate onto an inner surface of the tubular structure, thereby coating the inner surface with a desired coating.05-12-2011
20110111131METHOD FOR PRODUCING A MULTICOMPONENT, POLYMER- AND METAL-CONTAINING LAYER SYSTEM, DEVICE AND COATED ARTICLE - A method for producing layer systems on substrates includes irradiating a first vacuum coating source with an irradiating source. The first vacuum coating source includes a first layer material that is dissolved in a solvent. A second vacuum coating source is applied to the substrate via a chemical vapor deposition process. In this way, novel layer systems and mixed layers, in particular mixed layers of polymers and metals or metal oxides can be applied.05-12-2011
20110045202Formation of Carbon-Containing Material - A method includes forming ionic clusters of carbon-containing molecules, which molecules have carbon-carbon sp02-24-2011
20110097509MAGNETIC RECORDING MEDIUM, METHOD OF MANUFACTURING THE SAME AND MAGNETIC RECORDING APPARATUS - According to one embodiment, a magnetic recording medium includes two or more magnetic recording layers stacked on a nonmagnetic substrate, and a carbon-based protective layer formed on the two or more magnetic recording layers, in which an uppermost one of the two or more magnetic recording layers has hardness higher than that of a lower magnetic recording layer.04-28-2011
20110097511DEPOSITION APPARATUS AND MANUFACTURING METHOD OF THIN FILM DEVICE - [Object] To provide a deposition apparatus 04-28-2011
20110097510PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - Provided is a plasma processing apparatus including: an electrostatic chuck configured to hold a substrate inside a vacuum container, a pulse power source configured to apply a pulse having positive and negative polarities as a bias voltage and a controller configured to control the positive and negative polarities of the pulse.04-28-2011
20110151135OPTICAL THIN-FILM DEPOSITION DEVICE AND OPTICAL THIN-FILM FABRICATION METHOD - An optical thin-film vapor deposition apparatus and method are capable of producing an optical thin-film by vapor depositing a vapor deposition substance onto substrates (06-23-2011
20090252887SYSTEM AND METHOD FOR GROWING NANOTUBES WITH A SPECIFIED ISOTOPE COMPOSITION VIA ION IMPLANTATION USING A CATALYTIC TRANSMEMBRANE - An ion source(s) is configured to generate ions from one or more elements including a plurality of different isotopes or unique molecular combinations of two or more different isotopes from at least one of the selected elements. A selection filter(s) directs a subset of the ions onto a catalytic transmembrane to grow nanotubes of a specific isotope composition on the opposite side of the transmembrane. The nanotubes may be uniformly or selectively doped with dopant atoms. A controller can configure the selection filter(s) to sequentially pass different subsets of ions to form isotope, molecular or element junctions in the growing nanotubes.10-08-2009
20110135837ELECTROCHROMIC DEVICES HAVING IMPROVED ION CONDUCTING LAYERS - An improved ion conductor layer for use in electrochromic devices and other applications is disclosed. The improved ion-conductor layer is comprised of at least two ion transport layers and a buffer layer, wherein the at least two ion transport layers and the buffer layer alternate within the ion conductor layer such that the ion transport layers are in communication with a first and a second electrode. Electrochromic devices utilizing such an improved ion conductor layer color more deeply by virtue of the increased voltage developed across the ion conductor layer prior to electronic breakdown while reducing the amount of electronic leakage. Also disclosed are methods of making electrochromic devices incorporating the improved ion conductor layer disclosed herein and methods of making ion conductors for use in other applications.06-09-2011
20120121816PALLET FOR HIGH TEMPERATURE PROCESSING - A generally planar substrate pallet having an front, a back, and pair of sides. The distance between the front and the back and the distance between the sides are significantly longer than the thickness of the substrate pallet. The ratio of vertical deflection of the substrate pallet to the distance between the sides at temperatures used in high temperature processing systems relative to room temperature is less than 1%.05-17-2012
20120128892SURFACE PROCESSING METHOD AND SURFACE PROCESSING APPARATUS - A disclosed surface processing method includes a first processing step, wherein a gas cluster beam is generated from a source material that does not contain nitrogen, and irradiated to a member to be processed, and a second processing step, wherein a nitrogen gas cluster beam is generated and irradiated to the member to be processed.05-24-2012
20110189406METHOD OF FORMING GRAPHENE LAYER - The present invention relates to a method of forming a graphene layer, and, more particularly, to a method of forming a graphene layer which is a two-dimensional thin film composed of carbon atoms arranged in a honeycomb-style lattice and having one atom thick and which is put to practical use in the field of electric devices, transparent electrodes or microwave circuits. The method includes the steps of: (a) forming a metal thin film on a substrate; (b) injecting carbon ions into the metal thin film; and (c) heat-treating the carbon ions injected into the metal thin film to form a graphene layer on the metal thin film. The method is advantageous in that a graphene layer is formed by uniformly injecting an accurate amount of carbon ions into a metal thin film depending on the maximum solubility of carbon in the metal thin film and then heat-treating the injected carbon ions, thus uniformly forming the graphene layer on the metal thin film.08-04-2011
20120258257NANOLAYER DEPOSITION PROCESS - A hybrid deposition process of CVD and ALD, called NanoLayer Deposition (NLD) is provided. The NLD process is a cyclic sequential deposition process, including introducing a first plurality of precursors to deposit a thin film and introducing a second plurality of precursors to modify the deposited thin film. The deposition using the first set of precursors is not self limiting and is a function of substrate temperature and process time. The second set of precursors modifies the already deposited film characteristics. The second set of precursors can treat the deposited film, including treatments such as modification of film composition and doping or removal of impurities from the deposited film. The second set of precursors can also deposit another layer on the deposited film. The additional layer can react with the existing layer to form a compound layer, or can have minimum reaction to form a nanolaminate film.10-11-2012
20120258256GUIDED NON-LINE OF SIGHT COATING - A method for applying a vapor deposition coating onto a substrate with a non line of sight or limited line of sight is disclosed. A vapor stream is provided in a chamber that is below atmospheric pressure. The vapor stream is impinged with a working gas that provides a flow that transports the vapor stream. The flow of the working gas is modified with a physical object that directs the flow to achieve a desired coating on the substrate.10-11-2012
20120258255CONTROL OF FILM COMPOSITION IN CO-SPUTTER DEPOSITION BY USING COLLIMATORS - The present disclosure includes a method for control of a film composition with co-sputter physical vapor deposition. In one implementation, the method includes: positioning first and second PVD guns above a substrate, selecting first and second collimators having first and second sets of physical characteristics, positioning the first and second collimators between the first and second PVD guns and the substrate, sputtering at least one material from the first and second PVD guns through the first and second collimators upon application of a first power and second power, wherein the first PVD gun has a first deposition rate from the first collimator at the first power, and the second PVD gun has a second deposition rate from the second collimator at the second power.10-11-2012
20120231177Depositing Coatings In Long Hollow Substrates Using A Heated Center Electrode - A method and system for plasma immersion ion processing including providing a hollow substrate having an interior surface defining an interior and a gas feed tube extending through the interior, wherein the gas feed tube is hollow and includes a wall having a plurality of holes defined therein. The method and system may also include heating the gas feed tube to a temperature in the range of 50° C. to 650° C.; supplying a precursor gas to the interior of the hollow substrate through the plurality of holes in the gas feed tube and generating a plasma; and applying a negative bias to the hollow substrate relative to the gas feed tube to draw ions from the plasma to the interior surface to form a coating on the interior surface.09-13-2012
20110236591BIPOLAR RECTIFIER POWER SUPPLY - A process for powering an electrical load includes applying a rectified alternating current waveform across the load for a first time period with only a single power supply for at least two half cycles. At least one half cycle of an alternating current waveform of opposite polarity are then applied relative to the rectified alternating current waveform across the load for a second time period. Rectified alternating current waveform is then again applied across the load for at least two half cycles for a third time period to power the electrical load. The rectified alternating current waveform can be applied a direct current offset. A power supply is provided for provided power across the load according to this process.09-29-2011
20120088035PLATEN CONTROL - A system and method for maintain a desired degree of platen flatness is disclosed. A laser system is used to measure the flatness of a platen. The temperature of the platen is then varied to achieve the desired level of flatness. In some embodiments, this laser system is only used during a set up period and the resulting desired temperature is then used during normal operation. In other embodiments, a laser system is used to measure the flatness of the platen, even while the workpiece is being processed.04-12-2012
20090197010Plasma immersion ion implantation using an electrode with edge-effect suppression by a downwardly curving edge - In a plasma reactor, RF bias power is applied from an RF bias power generator to a disk-shaped electrode underlying and insulated from a workpiece and having a circumferential edge underlying a circumferential edge of the workpiece. The RF bias power is sufficient to produce a high RF bias voltage on the workpiece on the order of 0.5-20 kV. Non-uniformity in distribution of plasma across the workpiece is reduced by providing a curvature in a peripheral edge annulus of said electrode whereby the peripheral annulus slopes away from the workpiece support surface. The peripheral edge annulus corresponds to a small fraction of an area of said electrode. The remainder of the electrode encircled by the peripheral annulus has a flat shape.08-06-2009
20110268889Preparation of Mist, Process and Apparatus for Forming New Materials by Mist Gas Discharge - A process for preparing mist, which includes micro/nano solids or liquids, and a process for forming new materials by mist gas discharge, and also an apparatus for forming new materials. The advantages are: as compared to common gases, mists exhibit broader selection range of elements and compounds and broader range of suitable temperature and pressure. Due to the presence of mist AI(m), in a sealed container, the concentration of A in unit volume of mist is far higher than the concentration of A in unit volume of gas. Under specific conditions, the physical/chemical reactions can be carried out more easily, and new materials can be formed with higher efficiency.11-03-2011
20130101750High Metal Ionization Sputter Gun - In one aspect of the invention, a process chamber is provided. The chamber includes a plurality of sputter guns with a target affixed to one end of each of the sputter guns. Each of the plurality of sputter guns is coupled to a first power source. The first power source is operable to provide a pulsed power supply to each of the plurality of sputter guns. The pulsed power supply has a duty cycle that is less than 30%. A substrate support disposed at a distance from the plurality of sputter guns is included. The substrate support is coupled to a second power source. The second power source is operable to bias a substrate disposed on the substrate support, wherein the duty cycle of the second power source is synchronized with a duty cycle of the first power source. A method of performing a deposition process is also included.04-25-2013
20130101749Method and Apparatus for Enhanced Film Uniformity - In one aspect of the invention, a process chamber is provided. The process chamber includes a plurality of sputter guns with a target and a main magnet affixed to one end of each of the sputter guns. A substrate support is disposed at a distance from the plurality of sputter guns. An auxiliary magnet is disposed near the substrate. The auxiliary magnet surrounds an outer peripheral surface of the substrate support. In alternative embodiments the magnet may be disposed in a plate or holder disposed below or above the substrate support. In additional embodiments, the auxiliary magnet may be embedded within the substrate support. Furthermore, the auxiliary magnet can either be permanent magnets or electromagnets. A method of performing a deposition process is also included.04-25-2013
20110223346SPUTTERING DEVICE AND SPUTTERING METHOD - A magnetic film having excellent uniformity in in-plane distribution of film thickness or sheet resistance is formed when the film is formed by forming a magnetic field on a processing surface of a substrate (09-15-2011
20130149459METHOD FOR THE SURFACE TREATMENT OF A FLUID PRODUCT DISPENSING DEVICE - A method of surface treating a fluid dispenser device, the method including a step of modifying, by ion implantation using multi-charged and multi-energy ion beams, at least one surface to be treated of at least a portion of the device in contact with the fluid. The modified surface has properties limiting the formation of a biofilm and thus the appearance and/or proliferation of bacteria on the modified surface, the multi-charged ions being selected from helium, boron, carbon, nitrogen, oxygen, neon, argon, krypton, and xenon, ionic implantation being carried out to a depth of 0 μm to 3 μm.06-13-2013
20130189444Method of Forming Graphene on A Surface - Methods of forming a graphene material on a surface are presented. A metal material is disposed on a material substrate or material layer and is infused with carbon, for example, by exposing the metal to a carbon-containing vapor. The carbon-containing metal material is annealed to cause graphene to precipitate onto the bottom of the metal material to form a graphene layer between the metal material and the material substrate/material layer and also onto the top and/or sides of the metal material. Graphene material is removed from the top and sides of the metal material and then the metal material is removed, leaving only the graphene layer that was formed on the bottom of the metal material. In some cases graphene material that formed on one or more side of the sides of the metal material is not removed so that a vertical graphene material layer is formed.07-25-2013
20120021136SYSTEM AND METHOD FOR CONTROLLING PLASMA DEPOSITION UNIFORMITY - A plasma process uniformity control apparatus comprises a plasma chamber defined by chamber walls and a plurality of magnetic elements disposed on the outside of the chamber walls. Each of the plurality of magnets is configured to supply a magnetic field directed at respective portions of the plasma inside the chamber to control the uniformity of the plasma directed toward the target substrate.01-26-2012
20130202809METHODS OF FORMING LAYERS - A method of forming a layer, the method including providing a substrate having at least one surface adapted for deposition thereon; providing a precursor ion beam, the precursor ion beam including ions; neutralizing at least a portion of the ions of the precursor ion beam to form a neutral particle beam, the neutral particle beam including neutral particles; and directing the neutral particle beam towards the surface of the substrate, wherein both the ions and the neutral particles have implant energies of not greater than 100 eV, and the neutral particles of the particle beam form a layer on the substrate.08-08-2013

Patent applications in class Ion plating or implantation

Patent applications in all subclasses Ion plating or implantation