Class / Patent application number | Description | Number of patent applications / Date published |
423594900 | Tin, lead, or germanium containing (e.g., stannate, plumbate, etc.) | 8 |
20080260622 | Indium Tin Oxide - A method of preparing indium tin oxide (ITO) and such an oxide per se are described. The method utilises a cryogenic process wherein an aqueous formulation of indium sulphate, ammonium sulphate and a tin compound, optionally in the presence of an organic polymer, are frozen to produce a solid; the solid is conditioned by heating it to cause crystallisation of water in the solid; the water is removed for example by freeze drying; and the solid is then calcined. The ITO produced may have a surface tin concentration of less than 2 and other desirable properties. | 10-23-2008 |
20080299035 | Method for recycling used sputtering target - A method for recycling a used sputtering target is provided, including the steps of: (1) cleaning, (2) pulverization, (3) dissolution, (4) filtering, (5) peptization, (6) neutralization and precipitation, (7) rinsing and filtering, (8) drying, and (9) calcination; through the steps above, which can then be recycling used sputtering target to recover the constituent components of the ITO targets. | 12-04-2008 |
20090208404 | HYDROGEN GENERATING METHOD, HYDROGEN GENERATING ALLOY AND METHOD FOR PRODUCING HYDROGEN GENERATING ALLOY - An alloy generating hydrogen easily and safely for a long time is obtained. The alloy is obtained by melting in a blast furnace a first metal composed of one or more metals of Al, Zn and Mg and a second metal composed of one or more metals of Ga, Cd, In, Sn, Sb, Hg, Pb and Bi; and then placing the alloy in a molten state in water to cool the alloy. | 08-20-2009 |
20100189636 | Amorphous Film of Composite Oxide, Crystalline Film of Composite Oxide, Method of Producing said Films and Sintered Compact of Composite Oxide - Provided is an amorphous film comprised substantially of indium, tin, magnesium and oxygen, and containing tin at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Mg) and magnesium at a ratio of 0.1 to 2.0% based on an atomicity ratio of Mg/(In+Sn+Mg) with remnant being indium and oxygen, and having a film resistivity of | 07-29-2010 |
20120141358 | Method for Making Nanometer ITO Powder - Disclosed is a method for making nanometer ITO powder. In the method, first and second reactants are added to a solvent to provide a clear metal ion solution. The solvent is an alcohol or an organic solvent. The clear metal ion solution is added to a hydrolysis concentration solution at a desired ratio to provide a first solution. The hydrolysis concentration solution contains a sour catalyst and water. An aging step is taken on the first solution and the hydrolysis concentration solution to provide a second solution. A solvothermal step is executed on the second solution to provide multi-ingredient transparent conductive ITO powder in the order of nanometer. The solvothermal step includes the steps of locating the second solution in a solvothermal device and heating the second solution to a solvothermal temperature for a solvothermal reaction. | 06-07-2012 |
20130004412 | SYNTHESIS OF PALLADIUM BASED METAL OXIDES BY SONICATION - Provided herein are aqueous sonolysis methods involving mixing a precursor transition metal salt, with a Pd-water slurry and sonicating the resulting reaction mixture to synthesize the palladium-based transition metal oxides. Also provided herein are palladium-based transition metal oxides. | 01-03-2013 |
20130330267 | ITO FILM, ITO POWDER USED IN MANUFACTURING SAME ITO FILM, MANUFACTURING METHOD OF ITO POWDER, AND MANUFACTURING METHOD OF ITO FILM - An ITO film having a band gap in a range of 4.0 eV to 4.5 eV. | 12-12-2013 |
20140017163 | METHOD OF PREPARING SN-BASED OXIDE SEMICONDUCTOR NANOPOWDER AND METHOD OF MANUFACTURING PHOTOELECTRIC ELECTRODE USING SN-BASED OXIDE SEMICONDUCTOR NANOPOWDER - Disclosed herein is a method of preparing a ternary oxide semiconductor compound, including the steps of: dissolving an inorganic salt source including Sn and an inorganic salt source including at least one selected from the alkali earth metal group consisting of Ba, Sr and Ca in a mixed solvent of water and hydrogen peroxide to form a mixed solution; precipitating the mixed solution by changing the PH thereof to obtain a precipitate and then aging the precipitate; and drying and then annealing the aged precipitate to prepare MSnO | 01-16-2014 |