| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 423406000 | Binary compound | 44 |
| 20090280051 | METHOD AND APPARATUS FOR PRODUCING NITROGEN TRIFLUORIDE - A method for producing nitrogen trifluoride related to the present invention is characterized in that a fluorine gas and an ammonia gas are fed into a tubular reactor and are reacted with each other in the presence of a diluting gas in a gaseous phase under the condition of no catalyst to produce a gas product mainly composed of nitrogen trifluoride and a solid product mainly composed of ammonium fluoride and/or acidic ammonium fluoride, and then the solid product attached to an inner wall of the tubular reactor is removed by means of a device for removing the solid product, which device is mounted to the tubular reactor. | 11-12-2009 |
| 20090142248 | Method For Purifying Nitrogen Trifluoride - A highly pure nitrogen trifluoride having a carbon tetrafluoride content of 10 ppm or less can be effectively obtained by boiling crude liquid nitrogen trifluoride having carbon tetrafluoride contaminant under a pressure ranging from 35 to 45 atm, to remove carbon tetrafluoride therefrom through vaporization. | 06-04-2009 |
| 423407000 | Hydrazine or hydrazine hydrate | 1 |
| 423408000 | Utilizing halogen or sulfur as reactant | 1 |
| 20120121496 | METHOD FOR STORING A HYDRAZINE RESIN - A hydrazine-fixing group such as a ketone group, a formyl group, a chlormethyl group or an amide group, which is capable of releasably fixing hydrazine, is introduced into a side chain of a synthetic resin, and hydrazine is fixed to the hydrazine-fixing group. Since a hydrazine storage resin of the present invention has a hydrazine-releasable group capable of releasing hydrazine, it is able to store hydrazine stably. In addition, hydrazine can be supplied by releasing hydrazine from the hydrazine-releasable group. Consequently, the hydrazine storage resin can be widely used in various industrial fields requiring supply of hydrazine. | 05-17-2012 |
| 423409000 | Metal or ammonium containing | 41 |
| 20100158785 | Method for Growing Group III-Nitride Crystals in Supercritical Ammonia Using an Autoclave - A method of growing high-quality, group-III nitride, bulk single crystals. The group III-nitride bulk crystal is grown in an autoclave in supercritical ammonia using a source material or nutrient that is a group III-nitride polycrystals or group-III metal having a grain size of at least 10 microns or more and a seed crystal that is a group-III nitride single crystal. The group III-nitride polycrystals may be recycled from previous ammonothermal process after annealing in reducing gas at more then 600° C. The autoclave may include an internal chamber that is filled with ammonia, wherein the ammonia is released from the internal chamber into the autoclave when the ammonia attains a supercritical state after the heating of the autoclave, such that convection of the supercritical ammonia transfers source materials and deposits the transferred source materials onto seed crystals, but undissolved particles of the source materials are prevented from being transferred and deposited on the seed crystals. | 06-24-2010 |
| 20100074826 | METHOD FOR MANUFACTURING A SINGLE CRYSTAL OF NITRIDE BY EPITAXIAL GROWTH ON A SUBSTRATE PREVENTING GROWTH ON THE EDGES OF THE SUBSTRATE - A method for manufacturing a single crystal of nitride by epitaxial growth on a substrate appropriate for the growth of the crystal. The substrate includes, deposited on the edges of its growth surface, a mask appropriate to prevent growing of the single crystal on the edges of the substrate. | 03-25-2010 |
| 20100104495 | METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR, CRYSTAL GROWTH RATE INCREASING AGENT, SINGLE CRYSTAL NITRIDE, WAFER AND DEVICE - A method for producing a nitride semiconductor, comprising controlling temperature and pressure in a autoclave containing a seed having a hexagonal crystal structure, a nitrogen element-containing solvent, a raw material substance containing a metal element of Group 13 of the Periodic Table, and a mineralizer so as to put said solvent into a supercritical state and/or a subcritical state and thereby ammonothermally grow a nitride semiconductor crystal on the surface of said seed, wherein the crystal growth rate in the m-axis direction on said seed is 1.5 times or more the crystal growth rate in the c-axis direction on said seed. By the method, a nitride semiconductor having a large-diameter C plane or a nitride semiconductor thick in the m-axis direction can be efficiently and simply produced. | 04-29-2010 |
| 20130028826 | GROUP III NITRIDE CRYSTAL AND MANUFACTURING METHOD THEREOF - A group III nitride crystal containing therein an alkali metal element comprises a base body, a first group III nitride crystal formed such that at least a part thereof makes a contact with the base body, the first group III nitride crystal deflecting threading dislocations in a direction different from a direction of crystal growth from the base body and a second nitride crystal formed adjacent to the first group III nitride crystal, the second nitride crystal having a crystal growth surface generally perpendicular to the direction of the crystal growth. | 01-31-2013 |
| 20100068118 | High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal - The present invention discloses a high-pressure vessel of large size formed with a limited size of e.g. Ni—Cr based precipitation hardenable superalloy. The vessel may have multiple zones. | 03-18-2010 |
| 20090092536 | CRYSTAL PRODUCTION PROCESS USING SUPERCRITICAL SOLVENT, CRYSTAL GROWTH APPARATUS, CRYSTAL AND DEVICE - To control the precipitation position of a crystal and increase the yield of the crystal by performing the crystal growth according to the solvothermal method while allowing a predetermined amount of a substance differing in the critical density from the solvent to be present in the reaction vessel; and to prevent mixing of an impurity into the crystal and improve the crystal purity. | 04-09-2009 |
| 20110300051 | GROUP-III NITRIDE MONOCRYSTAL WITH IMPROVED PURITY AND METHOD OF PRODUCING THE SAME - A method to improve the crystal purity of a group-I11 nitride crystal grown in an ammonothermal growth system by removing any undesired material (i.e., impurities) from within the system prior to, in-between, or after the growth steps for the group-I11 nitride crystal. Impurities are removed from the ammonothermal growth system by first bringing the impurities into solution and then removing part or all of the solution from the growth system. The result is a high purity group-I11 nitride crystal grown in the ammonothermal growth system. | 12-08-2011 |
| 20100111808 | GROUP-III NITRIDE MONOCRYSTAL WITH IMPROVED CRYSTAL QUALITY GROWN ON AN ETCHED-BACK SEED CRYSTAL AND METHOD OF PRODUCING THE SAME - The present invention provides a method for growing group III-nitride crystals wherein the group III-nitride crystal growth occurs on an etched seed crystal. The etched seed is fabricated prior to growth using a temperature profile which produces a high solubility of the group III-nitride material in a seed crystals zone as compared to a source materials zone. The measured X-ray diffraction of the obtained crystals have significantly narrower Full Width at Half Maximum values as compared to crystals grown without etch back of the seed crystal surfaces prior to growth. | 05-06-2010 |
| 20080213158 | Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride - A manufacturing apparatus of Group III nitride crystals and a method for manufacturing Group III nitride crystals are provided, by which high quality crystals can be manufactured. For instance, crystals are grown using the apparatus of the present invention as follows. A crystal raw material ( | 09-04-2008 |
| 20110268645 | PROCESS FOR PRODUCING NITRIDE CRYSTAL, NITRIDE CRYSTAL AND APPARATUS FOR PRODUCING SAME - To grow a highly pure nitride crystal having a low oxygen concentration efficiently by an ammonothermal method. | 11-03-2011 |
| 20080219910 | Single-Crystal GaN Substrate - Manufacture at lower cost of off-axis GaN single-crystal freestanding substrates having a crystal orientation that is displaced from (0001) instead of (0001) exact. With an off-axis (111) GaAs wafer as a starting substrate, GaN is vapor-deposited onto the starting substrate, which grows GaN crystal that is inclined at the same off-axis angle and in the same direction as is the starting substrate. Misoriented freestanding GaN substrates may be manufactured, utilizing a misoriented (111) GaAs baseplate as a starting substrate, by forming onto the starting substrate a mask having a plurality of apertures, depositing through the mask a GaN single-crystal layer, and then removing the starting substrate. The manufacture of GaN crystal having a misorientation of 0.1° to 25° is made possible. | 09-11-2008 |
| 20090081109 | GaN CRYSTAL SHEET - A method forms a gallium nitride crystal sheet. According to the method a metal melt, including gallium, is brought to a vacuum of 0.01 Pa or lower and is heated to a growth temperature of between approximately 860° C. and approximately 870° C. A nitrogen plasma is applied to the surface of the melt at a sub-atmospheric working pressure, until a gallium nitride crystal sheet is formed on top. Preferably, the growth temperature is of 863° C., and the working pressure is within the range of 0.05 Pa and 2.5 Pa. Application of the plasma includes introducing nitrogen gas to the metal melt at the working pressure, igniting the gas into plasma, directing the plasma to the surface of the metal melt, until gallium nitride crystals crystallize thereon, and maintaining the working pressure and the directed plasma until a gallium nitride crystal sheet is formed. | 03-26-2009 |
| 20090081110 | GALLIUM NITRIDE-BASED MATERIAL AND METHOD OF MANUFACTURING THE SAME - Disclosed is a method of manufacturing a GaN-based material having high thermal conductivity. A gallium nitride-based material is grown by HVPE (Hydride Vapor Phase Epitaxial Growth) by supplying a carrier gas (G | 03-26-2009 |
| 20110223092 | USING BORON-CONTAINING COMPOUNDS, GASSES AND FLUIDS DURING AMMONOTHERMAL GROWTH OF GROUP-III NITRIDE CRYSTALS - Boron-containing compounds, gasses and fluids are used during ammonothermal growth of group-Ill nitride crystals. Boron-containing compounds are used as impurity getters during the ammonothermal growth of group-Ill nitride crystals. In addition, a boron-containing gas and/or supercritical fluid is used for enhanced solubility of group-Ill nitride into said fluid. | 09-15-2011 |
| 20100189624 | GROUP III NITRIDE CRYSTAL AND METHOD OF ITS GROWTH - Affords group III nitride crystal growth methods enabling crystal to be grown in bulk by a liquid-phase technique. One such method of growing group III nitride crystal from solution is provided with: a step of preparing a substrate having a principal face and including at least on its principal-face side a group III nitride seed crystal having the same chemical composition as the group III nitride crystal, and whose average density of threading dislocations along the principal face being 5×10 | 07-29-2010 |
| 20120093707 | Optimum Surface Texture Geometry - A surface geometry for an implantable medical electrode that optimizes the electrical characteristics of the electrode and enables an efficient transfer of signals from the electrode to surrounding bodily tissue. The coating is optimized to increase the double layer capacitance and to lower the after-potential polarization for signals having a pulse width in a pre-determined range by keeping the amplitude of the surface geometry with a desired range. | 04-19-2012 |
| 20110059005 | Iron nitride powders for use in magnetic, electromagnetic, and microelectronic devices - A method of making iron nitride powder is provided. The method comprises the steps of: a) providing an iron-based starting material; b) reducing the starting material by heating the starting material in a fluidized bed reactor in the presence of a reducing agent; c) nitriding the material obtained from step (b) by contacting the material with a nitrogen source. Also provided is the iron nitride powder made by the above method. | 03-10-2011 |
| 20120244062 | METHOD FOR PREPARING NITRIDE NANOMATERIALS - The present invention relates to a method for preparing nitride nanomaterials, including: providing a first precursor and a second precursor, in which the first precursor is a transition metal precursor, a group IIIA precursor, a group IVA precursor or a mixture thereof, and a second precursor is a nitrogen-containing aromatic compound; and heating the first precursor with the second precursor to form a nitride nanomaterial. Accordingly, the present invention provides a simpler, nontoxic, more widely applied and low-cost method for preparing nitride nanomaterials. | 09-27-2012 |
| 20110123425 | GaN Whiskers and Methods of Growing Them from Solution - Millimeter-scale GaN single crystals in filamentary form, also known as GaN whiskers, grown from solution and a process for preparing the same at moderate temperatures and near atmospheric pressures are provided. GaN whiskers can be grown from a GaN source in a reaction vessel subjected to a temperature gradient at nitrogen pressure. The GaN source can be formed in situ as part of an exchange reaction or can be preexisting GaN material. The GaN source is dissolved in a solvent and precipitates out of the solution as millimeter-scale single crystal filaments as a result of the applied temperature gradient. | 05-26-2011 |
| 20110110840 | METHOD FOR PRODUCING GROUP III-NITRIDE CRYSTAL AND GROUP III-NITRIDE CRYSTAL - A method for producing a group III-nitride crystal having a large thickness and high quality and a group III-nitride crystal are provided. A method for producing a group III-nitride crystal | 05-12-2011 |
| 20110176988 | AMMONIA DECOMPOSITION CATALYSTS AND THEIR PRODUCTION PROCESSES, AS WELL AS AMMONIA TREATMENT METHOD - The ammonia decomposition catalyst of the present invention is a catalyst for decomposing ammonia into nitrogen and hydrogen, including a catalytically active component containing at least one kind of transition metal selected from the group consisting of molybdenum, tungsten, vanadium, chromium, manganese, iron, cobalt, and nickel, preferably including: (I) a catalytically active component containing: at least one kind selected from the group consisting of molybdenum, tungsten, and vanadium; (II) a catalytically active component containing a nitride of at least one kind of transition metal selected from the group consisting of molybdenum, tungsten, vanadium, chromium, manganese, iron, cobalt, and nickel; or (III) a catalytically active component containing at least one kind of iron group metal selected from the group consisting of iron, cobalt, and nickel, and at least one metal oxide, thereby making it possible to effectively decompose ammonia into nitrogen and hydrogen at relatively low temperatures and at high space velocities to obtain high-pure hydrogen. | 07-21-2011 |
| 20100260656 | GROUP III NITRIDE CRYSTAL, METHOD FOR GROWING THE GROUP III NITRIDE CRYSTAL, AND APPARATUS FOR GROWING THE SAME - When a group III nitride crystal is grown in a pressurized atmosphere of a nitrogen-containing gas from a melt | 10-14-2010 |
| 20100303704 | METHOD FOR GROWING GROUP III-NITRIDE CRYSTALS IN A MIXTURE OF SUPERCRITICAL AMMONIA AND NITROGEN, AND GROUP III-NITRIDE CRYSTALS GROWN THEREBY - A method of growing group III-nitride crystals in a mixture of supercritical ammonia and nitrogen, and the group-III crystals grown by this method. The group III-nitride crystal is grown in a reaction vessel in supercritical ammonia using a source material or nutrient that is polycrystalline group III-nitride, amorphous group III-nitride, group-III metal or a mixture of the above, and a seed crystal that is a group-III nitride single crystal. In order to grow high-quality group III-nitride crystals, the crystallization temperature is set at 550° C. or higher. Theoretical calculations show that dissociation of NH | 12-02-2010 |
| 20100322841 | III-Nitride Single-Crystal Ingot, III-Nitride Single-Crystal Substrate, Method of Manufacturing III-Nitride Single-Crystal Ingot, and Method of Manufacturing III-Nitride Single-Crystal Substrate - Affords Group-III nitride single-crystal ingots and III-nitride single-crystal substrates manufactured utilizing the ingots, as well as methods of manufacturing III-nitride single-crystal ingots and methods of manufacturing III-nitride single-crystal substrates, wherein the incidence of cracking during length-extending growth is reduced. Characterized by including a step of etching the edge surface of a base substrate, and a step of epitaxially growing onto the base substrate hexagonal-system III-nitride monocrystal having crystallographic planes on its side surfaces. In order to reduce occurrences of cracking during length-extending growth of the ingot, depositing-out of polycrystal and out-of-plane oriented crystal onto the periphery of the monocrystal must be controlled. A layer of the base substrate edge surface, as just described, where it has been mechanically altered is removed beforehand by etching, whereby crystallographic planes form on the side surfaces of the III-nitride single-crystal ingot that is formed onto the base substrate, which therefore controls depositing-out of polycrystal and out-of-plane oriented crystal and reduces occurrences of cracking. | 12-23-2010 |
| 20120034149 | GaN-CRYSTAL FREE-STANDING SUBSTRATE AND METHOD FOR PRODUCING THE SAME - The invention relates to a GaN-crystal free-standing substrate obtained from a GaN crystal grown by HVPE with a (0001) plane serving as a crystal growth plane and at least one plane of a {10-11} plane and a {11-22} plane serving as a crystal growth plane that constitutes a facet crystal region, except for the side surface of the crystal, wherein the (0001)-plane-growth crystal region has a carbon concentration of 5×10 | 02-09-2012 |
| 20120003142 | VAPOR-PHASE PROCESS APPARATUS, VAPOR-PHASE PROCESS METHOD, AND SUBSTRATE - A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports. | 01-05-2012 |
| 20120063987 | GROUP-III NITRIDE CRYSTAL AMMONOTHERMALLY GROWN USING AN INITIALLY OFF-ORIENTED NON-POLAR OR SEMI-POLAR GROWTH SURFACE OF A GROUP-III NITRIDE SEED CRYSTAL - A method for ammonothermally growing group-III nitride crystals using an initially off-oriented non-polar and/or semi-polar growth surface on a group-III nitride seed crystal. Group-III-containing source materials and group-III nitride seed crystals are placed into a vessel, wherein the seed crystals have one or more non-polar or semi-polar growth surfaces. Group-III nitride crystals are ammonothermally grown by filling the vessel with a nitrogen-containing solvent for dissolving the source materials and transporting a fluid comprised of the solvent with the dissolved source materials to the seed crystals for growth of the group-III nitride crystals on the seed crystals. The growth surfaces are initially off-oriented growth surfaces, wherein the growth surfaces are off-oriented m-plane or highly vicinal m-plane growth surfaces. The growth surfaces of the seed crystals may be created by cutting group-III nitride crystals at a desired angle with respect to an m-plane. | 03-15-2012 |
| 20120164058 | METHOD FOR MANUFACTURING GALLIUM NITRIDE CRYSTAL AND GALLIUM NITRIDE WAFER - There is provided a method for fabricating a gallium nitride crystal with low dislocation density, high crystallinity, and resistance to cracking during polishing of sliced pieces by growing the gallium nitride crystal using a gallium nitride substrate including dislocation-concentrated regions or inverted-polarity regions as a seed crystal substrate. Growing a gallium nitride crystal | 06-28-2012 |
| 20120164057 | METHOD FOR PRODUCING SEMICONDUCTOR CRYSTAL, APPARATUS FOR CRYSTAL PRODUCTION AND GROUP 13 ELEMENT NITRIDE SEMICONDUCTOR CRYSTAL - A semiconductor crystal is produced through crystal growth in the presence of a solvent in a supercritical and/or subcritical state in a reactor, wherein at least a part of the surface of the reactor and the surface of the member to be used inside the reactor is coated with a platinum group-Group 13 metal alloy coating film. | 06-28-2012 |
| 20120251431 | METHOD FOR PRODUCING NITRIDE CRYSTAL - A method for producing a nitride crystal, comprising growing a nitride crystal on the surface of a seed crystal put in a reactor while the temperature and the pressure inside the reactor that contains, as put thereinto, a seed crystal having a hexagonal-system crystal structure, a nitrogen-containing solvent, a starting material, and a mineralizing agent containing fluorine and at least one halogen element selected from chlorine, bromine and iodine are so controlled that the solvent therein could be in a supercritical state and/or a subcritical state to thereby grow a nitride crystal on the surface of the seed crystal in the reactor. | 10-04-2012 |
| 20120225005 | METHOD FOR PRODUCING ALKALI METAL NITRIDE OR ALKALINE EARTH METAL NITRIDE - There is provided a method for efficiently producing a high-purity alkali metal nitride or alkaline earth metal nitride by simple processes. | 09-06-2012 |
| 20110123426 | MAGNETIC POWDER SUITABLE FOR LOW-NOISE MEDIA - An iron system magnetic powder, and particularly an iron system magnetic powder comprised chiefly of Fe | 05-26-2011 |
| 20120237431 | PRODUCTION METHOD, PRODUCTION VESSEL AND MEMBER FOR NITRIDE CRYSTAL - To provide a production method for a nitride crystal, where a nitride crystal can be prevented from precipitating in a portion other than on a seed crystal and the production efficiency of a gallium nitride single crystal grown on the seed crystal can be enhanced. In a method for producing a nitride crystal by an ammonothermal method in a vessel containing a mineralizer-containing solution, out of the surfaces of said vessel and a member provided in said vessel, at least a part of the portion coming into contact with said solution is constituted by a metal or alloy containing one or more atoms selected from the group consisting of tantalum (Ta), tungsten (W) and titanium (Ti), and has a surface roughness (Ra) of less than 1.80 μm. | 09-20-2012 |
| 20100247418 | Method for producing group III nitride semiconductor - An object of the present invention is to effectively add Ge in the production of GaN through the Na flux method. In a crucible, a seed crystal substrate is placed such that one end of the substrate remains on the support base, whereby the seed crystal substrate remains tilted with respect to the bottom surface of the crucible, and gallium solid and germanium solid are placed in the space between the seed crystal substrate and the bottom surface of the crucible. Then, sodium solid is placed on the seed crystal substrate. Through employment of this arrangement, when a GaN crystal is grown on the seed crystal substrate through the Na flux method, germanium is dissolved in molten gallium before formation of a sodium-germanium alloy. Thus, the GaN crystal can be effectively doped with Ge. | 09-30-2010 |
| 20110274609 | Group 3B nitride crystal substrate - A group 13 nitride crystal substrate according to the present invention is produced by growing a group 13 nitride crystal on a seed-crystal substrate by a flux method, wherein a content of inclusions in the group 13 nitride crystal grown in a region of the seed-crystal substrate except for a circumferential portion of the seed-crystal substrate, the region having an area fraction of 70% relative to an entire area of the seed-crystal substrate, is 10% or less, preferably 2% or less. | 11-10-2011 |
| 20130022528 | GALLIUM NITRIDE BULK CRYSTALS AND THEIR GROWTH METHOD - A gallium nitride crystal with a polyhedron shape having exposed {10-10} m-planes and an exposed (000-1) N-polar c-plane, wherein a surface area of the exposed (000-1) N-polar c-plane is more than 10 mm | 01-24-2013 |
| 423412000 | Aluminum containing | 5 |
| 20090220404 | METHOD OF MANUFACTURING AN ALUMINUM NITRIDE POWDER - An aluminum nitride-based ceramic sintered body is provided, which is manufactured by sintering an aluminum nitride powder comprising aluminum nitride as a main component, carbon in an amount of 0.1 wt % or more to 1.0 wt % or less, and containing oxygen in an amount that is not greater than 0.7 wt %, wherein carbon and oxygen are dissolved in grains of the aluminum nitride powder. The a-axis length of the lattice constant of the aluminum nitride is in a range of 3.1120 Å or more to 3.1200 Å or less, and the a c-axis length of the lattice constant is in a range of 4.9810 Å or more to 4.9900 Å or less. The volume resistivity of the aluminum nitride-based ceramic sintered body at 500° C. is 10 | 09-03-2009 |
| 20130034488 | METHOD FOR REMOVING OXYGEN FROM ALUMINUM NITRIDE BY CARBON - Disclosed is a method for removing oxygen from aluminum nitride by carbon. At first, an oven is provided. An aluminum nitride substrate is located in the oven. Nitrogen is introduced into the oven to form an atmosphere of nitrogen. The temperature is increased to the transformation point of the aluminum nitride substrate in the oven. Then, the heating is stopped and quenching is conducted in the oven. Carbon is introduced into the oven in the quenching. Thus, oxygen included in the aluminum nitride substrate reacts with the carbon to produce carbon monoxide or carbon dioxide. The carbon monoxide or carbon is released from the oven as well as the nitrogen. Thus, the aluminum nitride substrate is purified. | 02-07-2013 |
| 20090311162 | ALUMINUM NITRIDE SINTERED BODY AND MANUFACTURING METHOD THEREOF - An aluminum nitride sintered body in which the ratio of a peak area S2 of a diffraction peak at 2θ=34° or more and 35° or less corresponding to an aluminum oxynitride phase to a peak area S1 of a diffraction peak of an aluminum nitride crystal face [100] in X-ray diffraction, i.e. S2/S1, is 0.01 or more and 0.3 or less, and the spin concentration at a magnetic field between 336 mT and 342 mT as measured by an electron spin resonance method is 1×10 | 12-17-2009 |
| 20110212013 | ADDITION OF HYDROGEN AND/OR NITROGEN CONTAINING COMPOUNDS TO THE NITROGEN-CONTAINING SOLVENT USED DURING THE AMMONOTHERMAL GROWTH OF GROUP-III NITRIDE CRYSTALS - A method for adding hydrogen-containing and/or nitrogen-containing compounds to a nitrogen-containing solvent used during ammonothermal growth of group-Ill nitride crystals to offset decomposition products formed from the nitrogen-containing solvent, in order to shift the balance between the reactants, i.e. the nitrogen-containing solvent and the decomposition products, towards the reactant side. | 09-01-2011 |
| 20120039789 | APPARATUS FOR MANUFACTURING ALUMINUM NITRIDE SINGLE CRYSTAL, METHOD FOR MANUFACTURING ALUMINUM NITRIDE SINGLE CRYSTAL, AND ALUMINUM NITRIDE SINGLE CRYSTAL - Provided is a manufacturing device of an aluminum nitride single crystal including a crucible. An aluminum nitride raw material and a seed crystal are stored in an inner portion of the crucible. The seed crystal is placed so as to face the aluminum nitride raw material. The crucible includes an inner crucible and an outer crucible. The inner crucible stores the aluminum nitride raw material and the seed crystal inside the inner crucible. The inner crucible is also corrosion resistant to a sublimation gas of the aluminum nitride raw material. The inner crucible includes either, a single body of a metal having an ion radius larger than an ion radius of an aluminum, or includes a nitride of the metal. The outer crucible includes a boron nitride. The outer crucible covers the inner crucible. | 02-16-2012 |
